Продукція > IXYS > Всі товари виробника IXYS (16119) > Сторінка 258 з 269

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: D2PAK-7
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TOLL
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TO247-4
Mounting: THT
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTK600N04T2 IXTK600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ20N85X IXFJ20N85X IXYS IXFJ20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+879.52 грн
3+730.43 грн
В кошику  од. на суму  грн.
IXFP4N85X IXFP4N85X IXYS IXFA(P,Y)4N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
2+356.59 грн
50+176.65 грн
100+160.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA4N85X IXFA4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
2+257.49 грн
50+127.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFY4N85X IXFY4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
2+315.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA8N85XHV IXFA8N85XHV IXYS IXFP(Q)8N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
2+411.45 грн
3+342.62 грн
10+337.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFK66N85X IXFK66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH14N85X IXFH14N85X IXYS IXFA(H,P)14N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N85X IXFH30N85X IXYS IXFH30N85X_IXFT30N85XHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IXFX66N85X IXFX66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV IXFA14N85XHV IXYS IXFA(H,P)14N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH20N85X IXFH20N85X IXYS IXFH(P)20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Drain-source voltage: 650V
Drain current: 70A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 44mΩ
Pulsed drain current: 110A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 66nC
Reverse recovery time: 165ns
Gate-source voltage: ±20V
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT70N65X3HV IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Technology: X3-Class
Mounting: SMD
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 13mΩ
Pulsed drain current: 340A
Power dissipation: 1.17kW
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate charge: 434nC
Reverse recovery time: 270ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT110N10L2 IXTT110N10L2 IXYS IXTH(T)110N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ110N10P IXTQ110N10P IXYS IXTQ110N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL IXYS PdfFile135152.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT110N10P IXTT110N10P IXYS IXTQ110N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 132nC
Kind of package: tube
Reverse recovery time: 60ns
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
1+448.61 грн
5+225.95 грн
12+213.62 грн
100+212.80 грн
В кошику  од. на суму  грн.
DMA30P1600HR DMA30P1600HR IXYS DMA30P1600HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+631.77 грн
3+528.31 грн
10+466.69 грн
30+427.25 грн
В кошику  од. на суму  грн.
MDNA50P2200TG IXYS MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA700P2200CC IXYS littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
товару немає в наявності
В кошику  од. на суму  грн.
MCNA55P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA120P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA150P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 150A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCNA180P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 180A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCNA220P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
товару немає в наявності
В кошику  од. на суму  грн.
MCNA40P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA650P2200CA IXYS Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
товару немає в наявності
В кошику  од. на суму  грн.
MCNA75P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA95P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA140P2200TG IXYS MDNA140P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA380P2200KC IXYS MDNA380P2200KC.pdf LFPCN250210_Y1-screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
IXTA380N036T4-7-TR IXYS littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
CPC1706Y CPC1706Y IXYS CPC1706.pdf Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
2+417.64 грн
10+327.01 грн
25+304.82 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFZ140N25T IXYS IXFZ140N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170A IXGH16N170A IXYS IXGH(t)16N170A_H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X101-12A DSEI2X101-12A IXYS DSEI2X101-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
1+3693.29 грн
5+3061.39 грн
10+3027.70 грн
В кошику  од. на суму  грн.
IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH34N50P3 IXFH34N50P3 IXYS IXFH(Q)34N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+697.25 грн
10+465.04 грн
В кошику  од. на суму  грн.
IXFX64N50P IXFX64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
1+1232.57 грн
5+1015.53 грн
10+951.45 грн
30+865.18 грн
В кошику  од. на суму  грн.
IXFN64N50P IXFN64N50P IXYS IXFN64N50P.pdf description Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFN94N50P2 IXFN94N50P2 IXYS IXFN94N50P2.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
товару немає в наявності
В кошику  од. на суму  грн.
IXFK94N50P2 IXFK94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR44N50P IXFR44N50P IXYS IXFR44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK64N50P IXFK64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK64N50Q3 IXFK64N50Q3 IXYS IXFK(X)64N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX94N50P2 IXFX94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
товару немає в наявності
В кошику  од. на суму  грн.
IXFH44N50Q3 IXFH44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: D2PAK-7
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TOLL
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TO247-4
Mounting: THT
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTK600N04T2 IXTK(X)600N04T2.pdf
IXTK600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ20N85X IXFJ20N85X.pdf
IXFJ20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+879.52 грн
3+730.43 грн
В кошику  од. на суму  грн.
IXFP4N85X IXFA(P,Y)4N85X.pdf
IXFP4N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+356.59 грн
50+176.65 грн
100+160.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA4N85X IXFA(P,Y)4N85X.pdf
IXFA4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+257.49 грн
50+127.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFY4N85X IXFA(P,Y)4N85X.pdf
IXFY4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+315.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA8N85XHV IXFP(Q)8N85X_HV.pdf
IXFA8N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+411.45 грн
3+342.62 грн
10+337.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFK66N85X IXFK(X)66N85X.pdf
IXFK66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH14N85X IXFA(H,P)14N85X_HV.pdf
IXFH14N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N85X IXFH30N85X_IXFT30N85XHV.pdf
IXFH30N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268HV
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
IXFX66N85X IXFK(X)66N85X.pdf
IXFX66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV IXFA(H,P)14N85X_HV.pdf
IXFA14N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH20N85X IXFH(P)20N85X.pdf
IXFH20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Mounting: THT
Power dissipation: 890W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.105Ω
Reverse recovery time: 218ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Drain-source voltage: 650V
Drain current: 70A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 44mΩ
Pulsed drain current: 110A
Power dissipation: 780W
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate charge: 66nC
Reverse recovery time: 165ns
Gate-source voltage: ±20V
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT70N65X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Case: D3PAK; TO268
Technology: X3-Class
Mounting: SMD
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 170A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 13mΩ
Pulsed drain current: 340A
Power dissipation: 1.17kW
Technology: HiPerFET™; X2-Class
Kind of channel: enhancement
Gate charge: 434nC
Reverse recovery time: 270ns
Gate-source voltage: ±30V
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTT10N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT110N10L2 IXTH(T)110N10L2.pdf
IXTT110N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ110N10P IXTQ110N10P-DTE.pdf
IXTQ110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT110N10L2-TRL PdfFile135152.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXTT110N10P IXTQ110N10P-DTE.pdf
IXTT110N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Power dissipation: 430W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 132nC
Kind of package: tube
Reverse recovery time: 60ns
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+448.61 грн
5+225.95 грн
12+213.62 грн
100+212.80 грн
В кошику  од. на суму  грн.
DMA30P1600HR DMA30P1600HR.pdf
DMA30P1600HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+631.77 грн
3+528.31 грн
10+466.69 грн
30+427.25 грн
В кошику  од. на суму  грн.
MDNA50P2200TG MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA700P2200CC littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
товару немає в наявності
В кошику  од. на суму  грн.
MCNA55P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA120P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA150P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 150A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCNA180P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 180A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
В кошику  од. на суму  грн.
MCNA220P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
товару немає в наявності
В кошику  од. на суму  грн.
MCNA40P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA650P2200CA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
товару немає в наявності
В кошику  од. на суму  грн.
MCNA75P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MCNA95P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA140P2200TG MDNA140P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
товару немає в наявності
В кошику  од. на суму  грн.
MDNA380P2200KC MDNA380P2200KC.pdf LFPCN250210_Y1-screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
товару немає в наявності
В кошику  од. на суму  грн.
IXTA380N036T4-7-TR littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
CPC1706Y CPC1706.pdf
CPC1706Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+417.64 грн
10+327.01 грн
25+304.82 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFZ140N25T IXFZ140N25T.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170A IXGH(t)16N170A_H1.pdf
IXGH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X101-12A description DSEI2X101-12A.pdf
DSEI2X101-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3693.29 грн
5+3061.39 грн
10+3027.70 грн
В кошику  од. на суму  грн.
IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
IXYA55N65B5
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH34N50P3 IXFH(Q)34N50P3.pdf
IXFH34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+697.25 грн
10+465.04 грн
В кошику  од. на суму  грн.
IXFX64N50P IXFK(X)64N50P.pdf
IXFX64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1232.57 грн
5+1015.53 грн
10+951.45 грн
30+865.18 грн
В кошику  од. на суму  грн.
IXFN64N50P description IXFN64N50P.pdf
IXFN64N50P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFN94N50P2 IXFN94N50P2.pdf
IXFN94N50P2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
товару немає в наявності
В кошику  од. на суму  грн.
IXFK94N50P2 IXFx94N50P2.pdf
IXFK94N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFR44N50P IXFR44N50P.pdf
IXFR44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK64N50P IXFK(X)64N50P.pdf
IXFK64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK64N50Q3 IXFK(X)64N50Q3.pdf
IXFK64N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFX94N50P2 IXFx94N50P2.pdf
IXFX94N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
товару немає в наявності
В кошику  од. на суму  грн.
IXFH44N50Q3 IXFH(T)44N50Q3.pdf
IXFH44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.