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DMA50P1200HB DMA50P1200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+441.18 грн
3+368.62 грн
10+325.97 грн
30+298.60 грн
В кошику  од. на суму  грн.
DMA50P1200HR DMA50P1200HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+795.69 грн
3+665.61 грн
10+588.35 грн
30+539.25 грн
В кошику  од. на суму  грн.
DMA50P1600HB DMA50P1600HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
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LDA111 LDA111 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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LDA111S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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LDA111STR LDA111STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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IXFN66N85X IXFN66N85X IXYS IXFN66N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+3462.72 грн
3+2840.33 грн
В кошику  од. на суму  грн.
PLA140L PLA140L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
2+309.44 грн
10+233.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+585.93 грн
5+507.06 грн
10+469.23 грн
В кошику  од. на суму  грн.
IXFN40N110P IXFN40N110P IXYS IXFN40N110P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1992.69 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 IXFN40N110Q3 IXYS IXFN40N110Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1799.40 грн
В кошику  од. на суму  грн.
MCD95-16IO1B MCD95-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2622.83 грн
В кошику  од. на суму  грн.
CPC1540G CPC1540G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 965 шт:
термін постачання 21-30 дні (днів)
2+289.50 грн
50+176.26 грн
500+140.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2317N CPC2317N IXYS CPC2317N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
Insulation voltage: 1.5kV
Case: SO8
Mounting: SMT
Kind of output: MOSFET
на замовлення 577 шт:
термін постачання 21-30 дні (днів)
4+130.88 грн
10+112.68 грн
25+107.05 грн
50+101.41 грн
100+96.58 грн
150+95.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP34N65X2 IXTP34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
1+2764.98 грн
В кошику  од. на суму  грн.
IXFX300N20X3 IXFX300N20X3 IXYS IXF_300N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+2085.44 грн
10+1767.46 грн
В кошику  од. на суму  грн.
IXTH11P50 IXTH11P50 IXYS pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+795.69 грн
3+695.39 грн
10+589.15 грн
30+565.81 грн
В кошику  од. на суму  грн.
MCD312-16io1 MCD312-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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IXFT24N80P IXFT24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXTP100N04T2 IXTP100N04T2 IXYS IXTA(P)100N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain current: 100A
Drain-source voltage: 40V
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
3+182.89 грн
10+106.24 грн
50+93.36 грн
100+90.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY2N65X2 IXTY2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 259 шт:
термін постачання 21-30 дні (днів)
1+618.00 грн
3+490.16 грн
5+430.60 грн
10+415.30 грн
В кошику  од. на суму  грн.
IXDD609SIA IXDD609SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
4+112.68 грн
10+77.27 грн
25+74.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SIA IXDD604SIA IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 732 шт:
термін постачання 21-30 дні (днів)
4+118.75 грн
10+94.97 грн
25+81.29 грн
50+73.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1117NTR CPC1117NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFK64N60P3 IXFK64N60P3 IXYS IXF_64N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
1+1045.32 грн
5+846.71 грн
10+770.24 грн
25+724.37 грн
В кошику  од. на суму  грн.
IXTQ64N25P IXTQ64N25P IXYS IXTQ64N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
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IXKK85N60C IXKK85N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXTA120P065T IXTA120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
2+416.05 грн
10+319.53 грн
50+263.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA150E1600NA DMA150E1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29 Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
1+2316.00 грн
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
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VHF25-08IO7 VHF25-08IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1138.93 грн
3+934.43 грн
10+840.27 грн
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MDA72-16N1B MDA72-16N1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2776.25 грн
3+2280.95 грн
10+2046.74 грн
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IXBH20N300 IXBH20N300 IXYS littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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DPF240X400NA DPF240X400NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645 Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+3011.14 грн
3+2694.65 грн
В кошику  од. на суму  грн.
IXFP6N120P IXFP6N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+628.40 грн
3+545.69 грн
10+479.69 грн
25+428.18 грн
В кошику  од. на суму  грн.
CMA80MT1600NHR CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+689.94 грн
10+530.40 грн
30+449.91 грн
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA200N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
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IXFH28N60P3 IXFH28N60P3 IXYS IXFH(Q)28N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 475 шт:
термін постачання 21-30 дні (днів)
1+487.99 грн
5+368.62 грн
10+332.40 грн
В кошику  од. на суму  грн.
IXTH3N150 IXTH3N150 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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MCC132-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-08io1 MCC132-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+3760.03 грн
В кошику  од. на суму  грн.
MCC132-12io1 MCC132-12io1 IXYS pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+4303.49 грн
В кошику  од. на суму  грн.
MCC132-18IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-14IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
товару немає в наявності
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MCC132-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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DSA60C45HB DSA60C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+262.63 грн
3+219.72 грн
10+193.97 грн
30+177.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA60C60PB DSA60C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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IXFK210N30X3 IXFK210N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2066.37 грн
В кошику  од. на суму  грн.
CMA80MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007 Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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IXFB82N60P IXFB82N60P IXYS IXFB82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
1+1914.68 грн
5+1593.61 грн
25+1570.27 грн
В кошику  од. на суму  грн.
DSEC240-04A DSEC240-04A IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611 description Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Max. load current: 120A
Load current: 120A x2
Max. forward impulse current: 2kA
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IXFT120N30X3HV IXFT120N30X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Gate charge: 170nC
Reverse recovery time: 145ns
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+1121.59 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+585.93 грн
В кошику  од. на суму  грн.
IXBH6N170 IXBH6N170 IXYS IXBH6N170_IXBT6N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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DMA50P1200HB
DMA50P1200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 500A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 0.5kA
Case: TO247-3
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+441.18 грн
3+368.62 грн
10+325.97 грн
30+298.60 грн
В кошику  од. на суму  грн.
DMA50P1200HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB45968090540C4&compId=DMA50P1200HR.pdf?ci_sign=a806f1fbc18861dcff822bd89a4281ead6ff11bb
DMA50P1200HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 50A; tube; Ifsm: 555A; ISO247™; 210W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 50A
Semiconductor structure: double series
Kind of package: tube
Max. forward impulse current: 555A
Case: ISO247™
Max. forward voltage: 1.28V
Power dissipation: 210W
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+795.69 грн
3+665.61 грн
10+588.35 грн
30+539.25 грн
В кошику  од. на суму  грн.
DMA50P1600HB
DMA50P1600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 50A; tube; Ifsm: 500A; TO247-3
Mounting: THT
Type of diode: rectifying
Load current: 50A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
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LDA111 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V
Case: DIP6
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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LDA111S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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LDA111STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AB873ABB061EC&compId=LDA111.pdf?ci_sign=669c07d60ec939fd796a23671a6812ee659aadea
LDA111STR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 30V; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
Collector-emitter voltage: 30V
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
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IXFN66N85X IXFN66N85X.pdf
IXFN66N85X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 65A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 140A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 230nC
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3462.72 грн
3+2840.33 грн
В кошику  од. на суму  грн.
PLA140L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A98E60C7&compId=PLA140L.pdf?ci_sign=e9ab2af998e9385483102ff11a793c893e887522
PLA140L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+309.44 грн
10+233.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+585.93 грн
5+507.06 грн
10+469.23 грн
В кошику  од. на суму  грн.
IXFN40N110P IXFN40N110P.pdf
IXFN40N110P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 34A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 34A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 890W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 310nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1992.69 грн
В кошику  од. на суму  грн.
IXFN40N110Q3 IXFN40N110Q3.pdf
IXFN40N110Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.1kV; 35A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.1kV
Drain current: 35A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.26Ω
Pulsed drain current: 100A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 434ns
Gate charge: 300nC
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1799.40 грн
В кошику  од. на суму  грн.
MCD95-16IO1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D70923CA158A50&compId=MCD95-16IO1B-DTE.pdf?ci_sign=2b68c24bb34f43ba3ab2eb5cec3b22c657190eaa pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD95-16IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Max. off-state voltage: 1.6kV
Load current: 116A
Max. forward impulse current: 2.25kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.28V
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. load current: 180A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2622.83 грн
В кошику  од. на суму  грн.
CPC1540G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D740C7&compId=CPC1540.pdf?ci_sign=5f1209c6b4ad2777cac01c5c99b40e7fe82056f9
CPC1540G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 965 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+289.50 грн
50+176.26 грн
500+140.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC2317N CPC2317N.pdf
CPC2317N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Max. operating current: 120mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 9.35x3.81x2.18mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 16Ω
Insulation voltage: 1.5kV
Case: SO8
Mounting: SMT
Kind of output: MOSFET
на замовлення 577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+130.88 грн
10+112.68 грн
25+107.05 грн
50+101.41 грн
100+96.58 грн
150+95.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTP34N65X2 IXT_34N65X2.pdf
IXTP34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 53A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.14Ω
Pulsed drain current: 150A
Power dissipation: 1.04kW
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 250nC
Kind of channel: enhancement
на замовлення 195 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2764.98 грн
В кошику  од. на суму  грн.
IXFX300N20X3 IXF_300N20X3.pdf 200VProductBrief.pdf
IXFX300N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2085.44 грн
10+1767.46 грн
В кошику  од. на суму  грн.
IXTH11P50 pVersion=0046&contRep=ZT&docId=E29204E7FB2FFDF19A99005056AB752F&compId=DS94535L(IXTH-T11P50).pdf?ci_sign=75e2ecd6057bd9959b8b067840c0bc20763188af
IXTH11P50
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -11A; 300W; TO247-3; 500ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -11A
Gate charge: 145nC
Reverse recovery time: 0.5µs
On-state resistance: 0.75Ω
Gate-source voltage: ±20V
Power dissipation: 300W
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+795.69 грн
3+695.39 грн
10+589.15 грн
30+565.81 грн
В кошику  од. на суму  грн.
MCD312-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4DA694FFC2469&compId=MCC312-12IO1.pdf?ci_sign=3f968db46db8a1b8ba38583aacd1605eca7d74da
MCD312-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
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IXFT24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFT24N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
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IXTP100N04T2 IXTA(P)100N04T2.pdf
IXTP100N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; TO220AB; 34ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 34ns
On-state resistance: 7mΩ
Drain current: 100A
Drain-source voltage: 40V
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+182.89 грн
10+106.24 грн
50+93.36 грн
100+90.14 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTY2N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: SMD
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 259 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+618.00 грн
3+490.16 грн
5+430.60 грн
10+415.30 грн
В кошику  од. на суму  грн.
IXDD609SIA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+112.68 грн
10+77.27 грн
25+74.05 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 732 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+118.75 грн
10+94.97 грн
25+81.29 грн
50+73.24 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1117NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20A20C7&compId=CPC1117N.pdf?ci_sign=18d490086b78a6320fb704976e77bbb11aadfa34
CPC1117NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
IXFK64N60P3 IXF_64N60P3.pdf
IXFK64N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 64A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.13kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
на замовлення 291 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1045.32 грн
5+846.71 грн
10+770.24 грн
25+724.37 грн
В кошику  од. на суму  грн.
IXTQ64N25P IXTQ64N25P-DTE.pdf
IXTQ64N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 64A; 400W; TO3P
Mounting: THT
Power dissipation: 400W
Gate-source voltage: ±20V
Drain-source voltage: 250V
Technology: PolarHT™
Case: TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 105nC
Reverse recovery time: 200ns
On-state resistance: 49mΩ
Drain current: 64A
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IXKK85N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC765820&compId=IXKK85N60C.pdf?ci_sign=45f48f1ec514485461df7d7e3f166714c6045391
IXKK85N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 85A; 694W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 85A
Power dissipation: 694W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXTA120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTA120P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO263
Technology: TrenchP™
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+416.05 грн
10+319.53 грн
50+263.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA150E1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA59E3F493F0F00D6&compId=DMA150E1600NA.pdf?ci_sign=61a9de61d149c9bbbbdac5a942f6e82898210d29
DMA150E1600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; single diode; 1.6kV; If: 150A; SOT227B; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.6kV
Load current: 150A
Case: SOT227B
Max. forward voltage: 1.05V
Max. forward impulse current: 3kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
на замовлення 29 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2316.00 грн
В кошику  од. на суму  грн.
IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
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VHF25-08IO7 VHF25-ser.pdf
VHF25-08IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 32A; Ifsm: 180A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1138.93 грн
3+934.43 грн
10+840.27 грн
В кошику  од. на суму  грн.
MDA72-16N1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MDA72-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.6kV; If: 113Ax2; TO240AA
Max. forward impulse current: 1.54kA
Semiconductor structure: common anode; double
Case: TO240AA
Max. off-state voltage: 1.6kV
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.6V
Load current: 113A x2
Type of semiconductor module: diode
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2776.25 грн
3+2280.95 грн
10+2046.74 грн
В кошику  од. на суму  грн.
IXBH20N300 littelfuse-discrete-igbts-ixb-20n300-datasheet?assetguid=70aa67f2-6f1d-44e3-9aec-3531d0e0a4cc
IXBH20N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 50A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 64ns
Gate charge: 105nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 130A
Power dissipation: 250W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
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DPF240X400NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92966DC56E4A20C4&compId=DPF240X400NA.pdf?ci_sign=6fc4d0c4dfe81c07d0f6501815c460a2ef5b3645
DPF240X400NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 400V; If: 120Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Max. forward voltage: 1.06V
Max. load current: 120A
Load current: 120A x2
Max. off-state voltage: 0.4kV
Max. forward impulse current: 1.2kA
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3011.14 грн
3+2694.65 грн
В кошику  од. на суму  грн.
IXFP6N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D454445020B820&compId=IXFA(H%2CP)6N120P.pdf?ci_sign=943297d656831e25efec803b2ad2b28ea7b42a34
IXFP6N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 92nC
Power dissipation: 250W
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+628.40 грн
3+545.69 грн
10+479.69 грн
25+428.18 грн
В кошику  од. на суму  грн.
CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
CMA80MT1600NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; ISO247™; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: ISO247™
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+689.94 грн
10+530.40 грн
30+449.91 грн
В кошику  од. на суму  грн.
IXTA200N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8F02C5009820&compId=IXTA(P)200N055T2.pdf?ci_sign=b09970100e7885edd8a9745146ea46cc0cf0637b
IXTA200N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO263
Polarisation: unipolar
Reverse recovery time: 49ns
Gate charge: 109nC
On-state resistance: 4.2mΩ
Drain-source voltage: 55V
Drain current: 200A
Power dissipation: 360W
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFH28N60P3 IXFH(Q)28N60P3.pdf
IXFH28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 475 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+487.99 грн
5+368.62 грн
10+332.40 грн
В кошику  од. на суму  грн.
IXTH3N150 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B494D3820&compId=IXTH3N150.pdf?ci_sign=9f26c436d8a2db1056604f21919c428f65c6491b
IXTH3N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO247-3; 900ns
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 38.6nC
Reverse recovery time: 900ns
Drain current: 3A
Power dissipation: 250W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
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MCC132-14io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9BB4B38B42259&compId=MCC132-14io1.pdf?ci_sign=36cce519676ef7befdb41694a085cfd5acae9487 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.04kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D5FD28D50DE27&compId=MCC132-16IO1-DTE.pdf?ci_sign=ede7be546f4de8829bef360b7a919176f9b7d2d7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.14V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.14V
Load current: 130A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Kind of package: bulk
Semiconductor structure: double series
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MCC132-08io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-08io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 0.8kV
Kind of package: bulk
Semiconductor structure: double series
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3760.03 грн
В кошику  од. на суму  грн.
MCC132-12io1 pVersion=0046&contRep=ZT&docId=E2920706D3E035F19A99005056AB752F&compId=L079.pdf?ci_sign=670f371d8f9338259ca653a886128336d5194817 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MCC132-12io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 130A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.36V
Max. off-state voltage: 1.2kV
Load current: 130A
Max. forward impulse current: 5.08kA
Semiconductor structure: double series
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4303.49 грн
В кошику  од. на суму  грн.
MCC132-18IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-14IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86EB5FF3B4F0C0C4&compId=MCC132-14io1B.pdf?ci_sign=075be34417d6ea2469487752d23265a7171d8ffc pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.4kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-16IO1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
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MCC132-18io1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 130A; Y4-M6; Ufmax: 1.36V
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: thyristor
Case: Y4-M6
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 130A
Max. off-state voltage: 1.8kV
Kind of package: bulk
Semiconductor structure: double series
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DSA60C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9AAE31081D8BF&compId=DSA60C45HB.pdf?ci_sign=c0020e9ae6ab7c51a260e30c95c39c59b755ac0d
DSA60C45HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 30A x2
Power dissipation: 160W
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+262.63 грн
3+219.72 грн
10+193.97 грн
30+177.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSA60C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9B77B89AF38BF&compId=DSA60C60PB.pdf?ci_sign=973506983f66217d2a25bc2d0322d9632fed9b1d
DSA60C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.77V
Load current: 30A x2
Power dissipation: 175W
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IXFK210N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB2D57B02A78BF&compId=IXF_210N30X3.pdf?ci_sign=b936bb2c259b202c476c66a13724d25b3b29cb21 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFK210N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Mounting: THT
Polarisation: unipolar
Reverse recovery time: 190ns
Gate charge: 375nC
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 300V
Power dissipation: 1.25kW
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO264
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2066.37 грн
В кошику  од. на суму  грн.
CMA80MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA78234DDB91E00C4&compId=CMA80MT1600NHB.pdf?ci_sign=d55165b06458e6d8f4d3090ec4ae7776c173744c
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 325A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 325A
Case: TO247-3
Gate current: 70/90mA
Kind of package: tube
Max. load current: 40A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822AE67CA100C4&compId=CMA60MT1600NHB.pdf?ci_sign=c7185daf19a3ef746f2ca09df41abf01f190c007
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: TO247-3
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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CMA60MT1600NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFB01983335E0C4&compId=CMA60MT1600NHR.pdf?ci_sign=bea444f984a1305865b5b5358c10e1731808fe4e
Виробник: IXYS
Category: Triacs
Description: Triac; 1.6kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 220A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 220A
Case: ISO247™
Gate current: 60/80mA
Kind of package: tube
Max. load current: 30A
Mounting: THT
Type of thyristor: triac
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IXFB82N60P IXFB82N60P.pdf
IXFB82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 82A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 200ns
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1914.68 грн
5+1593.61 грн
25+1570.27 грн
В кошику  од. на суму  грн.
DSEC240-04A description pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8EE4C0897461E0D3&compId=DSEC240-04A.pdf?ci_sign=fa2bfa7fb181c32a0e1f65011cdbef81fa691611
DSEC240-04A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 120Ax2; SOT227UI; Ufmax: 1V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227UI
Max. forward voltage: 1V
Max. off-state voltage: 0.4kV
Max. load current: 120A
Load current: 120A x2
Max. forward impulse current: 2kA
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IXFT120N30X3HV pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBD406B0DCD8BF&compId=IXF_120N30X3_HV.pdf?ci_sign=44c2594b70f8a430a588605e95888b402a9a745c pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFT120N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Gate charge: 170nC
Reverse recovery time: 145ns
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1121.59 грн
В кошику  од. на суму  грн.
IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+585.93 грн
В кошику  од. на суму  грн.
IXBH6N170 IXBH6N170_IXBT6N170.pdf
IXBH6N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 6A; 75W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate charge: 17nC
Turn-on time: 104ns
Turn-off time: 700ns
Collector current: 6A
Gate-emitter voltage: ±20V
Pulsed collector current: 36A
Power dissipation: 75W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
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