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IXFP14N60P IXFP14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFH14N60P IXFH14N60P IXYS IXFA(H,P)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFA14N60P IXFA14N60P IXYS IXFA(H,P)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P IXTA14N60P IXYS IXTA(P,Q)14N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTP14N60P IXTP14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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LAA108 LAA108 IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
2+332.81 грн
Мінімальне замовлення: 2 шт
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DSEI36-06AS-TRL DSEI36-06AS-TRL IXYS littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
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DSEI36-06AS-TUB IXYS DSEI36-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
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PM1206 PM1206 IXYS PM1206.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
1+1256.28 грн
50+764.12 грн
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IXYN75N65C3D1 IXYN75N65C3D1 IXYS IXYN75N65C3D1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
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IXFT150N30X3HV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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 Мінімальне замовлення: 400 шт
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
On-state resistance: 0.15Ω
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+1340.40 грн
2+902.50 грн
3+852.41 грн
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MEA250-12DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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IXFA180N10T2 IXFA180N10T2 IXYS IXFA(P)180N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
1+560.48 грн
10+339.61 грн
50+314.99 грн
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IXFP180N10T2 IXFP180N10T2 IXYS IXFA(P)180N10T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 66ns
Gate charge: 185nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
1+480.02 грн
3+399.89 грн
10+326.02 грн
50+292.91 грн
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IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+612.60 грн
4+283.57 грн
10+268.29 грн
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IXTA80N10T IXTA80N10T IXYS IXTA(P)80N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXTA80N10T-TRL IXTA80N10T-TRL IXYS littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Application: automotive industry
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 Мінімальне замовлення: 800 шт
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IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 72ns
Pulsed drain current: 180A
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTP180N10T IXTP180N10T IXYS IXTA(P)180N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 72ns
Gate charge: 151nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXFA180N10T2-TRL IXFA180N10T2-TRL IXYS littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 66ns
Gate charge: 185nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTA180N10T7 IXYS media?resourcetype=datasheets&itemid=63142F38-9BA5-4484-AB78-644B1C6EE8AA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTA180N10T7-Datasheet.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
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 Мінімальне замовлення: 300 шт
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IXTA180N10T7-TRL IXYS littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTH180N10T IXYS media?resourcetype=datasheets&itemid=238C7738-6E97-47FB-BBA5-03617935279F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTH180N10T-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTQ180N10T IXYS media?resourcetype=datasheets&itemid=F80BF6AA-7B2A-4BC6-B1BD-527FACE8CC65&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTQ180N10T-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
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 Мінімальне замовлення: 300 шт
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DHG60C600HB DHG60C600HB IXYS DHG60C600HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
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DHG60I1200HA DHG60I1200HA IXYS DHG60I1200HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
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DHG60U1200LB-TRR IXYS DHG60U1200LB.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
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 Мінімальне замовлення: 200 шт
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DHG60U1200LB-TUB IXYS media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
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IXFR44N50Q IXFR44N50Q IXYS IXFR44N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
1+1560.75 грн
3+1352.48 грн
10+1259.94 грн
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IXFA14N60P-TRL IXFA14N60P-TRL IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: 30V
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTY14N60X2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Reverse recovery time: 320ns
Technology: X2-Class
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 Мінімальне замовлення: 2500 шт
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MCMA450UH1600TEH IXYS Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
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IXFT24N90P-TRL IXYS littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Power dissipation: 660W
Case: D3PAK; TO268
Mounting: SMD
Gate charge: 130nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Gate-source voltage: 30V
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXSJ25N120R1 IXYS power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
On-state resistance: 62mΩ
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT24N80P IXFT24N80P IXYS IXFH(K,T)24N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
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В кошику  од. на суму  грн.
IXFH60N65X2W IXYS ixfh60n65x2w-datasheet?assetguid=1714e745-befa-453a-b92a-4737f53cebb1 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXSA60N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: D2PAK-7
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSG60N65L2K IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TOLL
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXSH60N65L2KHV IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TO247-4
Mounting: THT
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
 Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTK600N04T2 IXTK600N04T2 IXYS IXTK(X)600N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
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IXFJ20N85X IXFJ20N85X IXYS IXFJ20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
1+908.84 грн
3+754.78 грн
В кошику  од. на суму  грн.
IXFP4N85X IXFP4N85X IXYS IXFA(P,Y)4N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
2+368.47 грн
50+182.54 грн
100+165.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA4N85X IXFA4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
2+266.07 грн
50+131.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFY4N85X IXFY4N85X IXYS IXFA(P,Y)4N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
2+325.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA8N85XHV IXFA8N85XHV IXYS IXFP(Q)8N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
2+425.16 грн
3+354.04 грн
10+348.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFK66N85X IXFK66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
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В кошику  од. на суму  грн.
IXFH14N85X IXFH14N85X IXYS IXFA(H,P)14N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
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IXFH30N85X IXFH30N85X IXYS IXFH30N85X_IXFT30N85XHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
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В кошику  од. на суму  грн.
IXFT50N85XHV IXFT50N85XHV IXYS IXF_50N85X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
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IXFX66N85X IXFX66N85X IXYS IXFK(X)66N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
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В кошику  од. на суму  грн.
IXFA14N85XHV IXFA14N85XHV IXYS IXFA(H,P)14N85X_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
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В кошику  од. на суму  грн.
IXFA14N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA20N85XHV-TRL IXFA20N85XHV-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH20N85X IXFH20N85X IXYS IXFH(P)20N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK50N85X IXFK50N85X IXYS IXF_50N85X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
Pulsed drain current: 110A
Gate charge: 66nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT70N65X3HV IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Type of transistor: N-MOSFET
Technology: X3-Class
Case: D3PAK; TO268
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN170N65X2 IXFN170N65X2 IXYS IXFN170N65X2.pdf Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Power dissipation: 1.17kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Gate charge: 434nC
Mechanical mounting: screw
Electrical mounting: screw
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IXFP14N60P IXFA(H,P)14N60P.pdf
IXFP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFH14N60P IXFA(H,P)14N60P.pdf
IXFH14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
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IXFA14N60P IXFA(H,P)14N60P.pdf
IXFA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 14A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
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IXTA14N60P IXTA(P,Q)14N60P.pdf
IXTA14N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO263; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP14N60P IXTA(P,Q)14N60P.pdf
IXTP14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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LAA108 LAA108.pdf
LAA108
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Max. operating current: 300mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Mounting: THT
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 3ms
Control current max.: 50mA
On-state resistance: 8Ω
Kind of output: MOSFET
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+332.81 грн
Мінімальне замовлення: 2 шт
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DSEI36-06AS-TRL littelfuse-power-semiconductors-dsei36-06as-datasheet?assetguid=e6dafff2-758c-449a-9042-56d94bd941ff
DSEI36-06AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 50ns; D2PAK,TO263AB; Ufmax: 1.6V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.6V
Max. forward impulse current: 0.3kA
Technology: FRED
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
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DSEI36-06AS-TUB DSEI36-06AS.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 37A; 35ns; TO263AB; Ufmax: 1.4V; 125W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 37A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.4V
Max. forward impulse current: 0.3kA
Power dissipation: 125W
Technology: FRED
Kind of package: tube
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PM1206 PM1206.pdf
PM1206
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Mounting: THT
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: DIP6
Max. operating current: 0.5A
Control current max.: 100mA
Type of relay: solid state
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1256.28 грн
50+764.12 грн
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IXYN75N65C3D1 IXYN75N65C3D1.pdf
IXYN75N65C3D1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 75A; SOT227B; 600W
Collector current: 75A
Power dissipation: 600W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
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IXFT150N30X3HV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 300V; 150A; 890W; D3PAK,TO268; 167ns
Mounting: SMD
Power dissipation: 890W
Gate charge: 177nC
Technology: HiPerFET™
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Case: D3PAK; TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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Мінімальне замовлення: 400 шт
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CPC2907B CPC2907B.pdf
CPC2907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
On-state resistance: 0.15Ω
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 4kV
Turn-on time: 2.5ms
Switched voltage: max. 60V AC; max. 60V DC
Max. operating current: 2A
Turn-off time: 0.25ms
Control current max.: 50mA
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1340.40 грн
2+902.50 грн
3+852.41 грн
В кошику  од. на суму  грн.
MEA250-12DA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 260A; Y4-M6; screw
Case: Y4-M6
Kind of package: bulk
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Semiconductor structure: common anode; double
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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IXFA180N10T2 IXFA(P)180N10T2.pdf
IXFA180N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+560.48 грн
10+339.61 грн
50+314.99 грн
В кошику  од. на суму  грн.
IXFP180N10T2 IXFA(P)180N10T2.pdf
IXFP180N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 66ns
Gate charge: 185nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+480.02 грн
3+399.89 грн
10+326.02 грн
50+292.91 грн
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IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+612.60 грн
4+283.57 грн
10+268.29 грн
В кошику  од. на суму  грн.
IXTA80N10T IXTA(P)80N10T.pdf
IXTA80N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO263; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO263
On-state resistance: 14mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXTA80N10T-TRL littelfuse-discrete-mosfets-ixtp80n10t-datasheet?assetguid=97c849e2-6910-43ce-9bda-8b33b853f553
IXTA80N10T-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 80A; 230W; D2PAK,TO263; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: D2PAK; TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA180N10T-TRL littelfuse-discrete-mosfets-ixt-180n10t-datasheet?assetguid=a45c8ae2-5c3f-4d3f-be24-0a3d6e97b45b
IXTA180N10T-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; 100V; 180A; Idm: 180A; 480W; D2PAK
Type of transistor: N-MOSFET
Technology: Trench
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK
Gate-source voltage: 20V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 72ns
Pulsed drain current: 180A
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTP180N10T IXTA(P)180N10T.pdf
IXTP180N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 72ns
Gate charge: 151nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
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IXFA180N10T2-TRL littelfuse-discrete-mosfets-ixf-180n10t2-datasheet?assetguid=fe756911-5a6e-4383-b388-3883df0a0b48
IXFA180N10T2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; D2PAK,TO263; 66ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 66ns
Gate charge: 185nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA180N10T7 media?resourcetype=datasheets&itemid=63142F38-9BA5-4484-AB78-644B1C6EE8AA&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTA180N10T7-Datasheet.PDF
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTA180N10T7-TRL littelfuse-discrete-mosfets-ixta180n10t7-datasheet?assetguid=63142f38-9ba5-4484-ab78-644b1c6ee8aa
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO263-7; 100ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH180N10T media?resourcetype=datasheets&itemid=238C7738-6E97-47FB-BBA5-03617935279F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTH180N10T-Datasheet.PDF
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 480W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO247-3
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTQ180N10T media?resourcetype=datasheets&itemid=F80BF6AA-7B2A-4BC6-B1BD-527FACE8CC65&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTQ180N10T-Datasheet.PDF
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 100V; 180A; 480W; TO3P; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: 30V
On-state resistance: 6.4mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 151nC
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
DHG60C600HB DHG60C600HB.pdf
DHG60C600HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 200A; TO247-3; tube; 180W
Max. off-state voltage: 0.6kV
Load current: 30A x2
Max. forward impulse current: 200A
Max. forward voltage: 2.21V
Case: TO247-3
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 40ns
Mounting: THT
Power dissipation: 180W
Features of semiconductor devices: fast switching
Semiconductor structure: common cathode; double
Type of diode: rectifying
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DHG60I1200HA DHG60I1200HA.pdf
DHG60I1200HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60A; Ifsm: 500A; TO247-2; tube; 360W
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 0.5kA
Max. forward voltage: 2.34V
Case: TO247-2
Kind of package: tube
Technology: Sonic FRD™
Reverse recovery time: 200ns
Mounting: THT
Power dissipation: 360W
Features of semiconductor devices: fast switching
Semiconductor structure: single diode
Type of diode: rectifying
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DHG60U1200LB-TRR DHG60U1200LB.pdf
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: reel; tape
Technology: Sonic FRD™
товару немає в наявності
Мінімальне замовлення: 200 шт
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DHG60U1200LB-TUB media?resourcetype=datasheets&itemid=18f98573-a03e-4696-beb4-d5c97f0ab1a8&filename=Littelfuse-Power-Semiconductors-DHG60U1200LB-Datasheet
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 60A; Ifsm: 200A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 60A
Max. forward impulse current: 200A
Electrical mounting: SMT
Max. forward voltage: 3.15V
Case: SMPD-B
Kind of package: tube
Technology: Sonic FRD™
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IXFR44N50Q IXFR44N50Q.pdf
IXFR44N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 93 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1560.75 грн
3+1352.48 грн
10+1259.94 грн
В кошику  од. на суму  грн.
IXFA14N60P-TRL littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 14A; 300W; D2PAK,TO263; 200ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: D2PAK; TO263
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: 30V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTY14N60X2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; 600V; 14A; 180W; TO252/DPAK; 320ns
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO252/DPAK
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 16.7nC
Kind of channel: enhancement
Reverse recovery time: 320ns
Technology: X2-Class
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
MCMA450UH1600TEH
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; 1.6kV; If: 450A; Ifsm: 2.4kA
Type of bridge rectifier: half-controlled
Max. forward impulse current: 2.4kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Electrical mounting: Press-in PCB
Load current: 450A
Case: E3-Pack
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IXFT24N90P-TRL littelfuse-discrete-mosfets-ixf-24n90p-datasheet?assetguid=1850cbbc-4a71-4b6c-9e4b-bd580f61e590
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 900V; 24A; 660W; D3PAK,TO268; 300ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Power dissipation: 660W
Case: D3PAK; TO268
Mounting: SMD
Gate charge: 130nC
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 900V
Gate-source voltage: 30V
On-state resistance: 0.42Ω
Reverse recovery time: 300ns
товару немає в наявності
Мінімальне замовлення: 400 шт
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IXSJ25N120R1 power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 1.2kV; 25A; 75.3W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 75.3W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Polarisation: N
Technology: SiC
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Gate-source voltage: -4...21V
On-state resistance: 62mΩ
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFT24N80P IXFH(K,T)24N80P.pdf
IXFT24N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO268
Mounting: SMD
Power dissipation: 650W
Gate charge: 0.1µC
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO268
On-state resistance: 0.4Ω
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IXFH60N65X2W ixfh60n65x2w-datasheet?assetguid=1714e745-befa-453a-b92a-4737f53cebb1
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXSA60N65L2-7TR power-semiconductor-sic-mosfet-ixsa60n65l2-7tr-datasheet?assetguid=13dbac17-813e-4c03-8ede-0725d4259010
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; D2PAK-7
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: D2PAK-7
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXSG60N65L2K power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TOLL
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TOLL
Mounting: SMD
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXSH60N65L2KHV Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSH60N65L2KHV_Datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; N; 650V; 60A; 249W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 249W
Case: TO247-4
Mounting: THT
Gate charge: 94.7nC
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: -5...20V
On-state resistance: 40Ω
Polarisation: N
Technology: SiC
Drain current: 60A
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику  од. на суму  грн.
IXFA12N65X2-TRL littelfuse-discrete-mosfets-ixf-12n65x2-datasheet?assetguid=ca7fb720-7825-4c0e-b2dd-7746de20884a
IXFA12N65X2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 650V; 12A; 180W; D2PAK,TO263; 155ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 155ns
Gate charge: 18.5nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTK600N04T2 IXTK(X)600N04T2.pdf
IXTK600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ20N85X IXFJ20N85X.pdf
IXFJ20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 9.5A; Idm: 50A; 110W
Mounting: THT
Pulsed drain current: 50A
Power dissipation: 110W
Gate charge: 63nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: ISO247™
On-state resistance: 0.36Ω
Reverse recovery time: 190ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+908.84 грн
3+754.78 грн
В кошику  од. на суму  грн.
IXFP4N85X IXFA(P,Y)4N85X.pdf
IXFP4N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: THT
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+368.47 грн
50+182.54 грн
100+165.56 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA4N85X IXFA(P,Y)4N85X.pdf
IXFA4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO263
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+266.07 грн
50+131.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFY4N85X IXFA(P,Y)4N85X.pdf
IXFY4N85X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 3.5A; Idm: 10A; 150W
Mounting: SMD
Pulsed drain current: 10A
Power dissipation: 150W
Gate charge: 7nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Features of semiconductor devices: ultra junction x-class
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO252
On-state resistance: 2.5Ω
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+325.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA8N85XHV IXFP(Q)8N85X_HV.pdf
IXFA8N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 8A; Idm: 16A; 200W
Mounting: SMD
Pulsed drain current: 16A
Power dissipation: 200W
Gate charge: 17nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: TO263HV
On-state resistance: 0.85Ω
Reverse recovery time: 125ns
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+425.16 грн
3+354.04 грн
10+348.95 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFK66N85X IXFK(X)66N85X.pdf
IXFK66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH14N85X IXFA(H,P)14N85X_HV.pdf
IXFH14N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO247-3; 116ns
Mounting: THT
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N85X IXFH30N85X_IXFT30N85XHV.pdf
IXFH30N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO247-3; 160ns
Mounting: THT
Power dissipation: 695W
Gate charge: 68nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.23Ω
Reverse recovery time: 160ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT50N85XHV IXF_50N85X.pdf
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику  од. на суму  грн.
IXFX66N85X IXFK(X)66N85X.pdf
IXFX66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; PLUS247™; 250ns
Mounting: THT
Power dissipation: 1.25kW
Gate charge: 230nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 66A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: PLUS247™
On-state resistance: 65mΩ
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV IXFA(H,P)14N85X_HV.pdf
IXFA14N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO263HV; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263HV
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA14N85XHV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 14A; 460W; D2PAK-3; 116ns
Mounting: SMD
Power dissipation: 460W
Gate charge: 30nC
Technology: HiPerFET™
Drain current: 14A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK-3
On-state resistance: 0.55Ω
Reverse recovery time: 116ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFA20N85XHV-TRL
IXFA20N85XHV-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 850V; 20A; 540W; D2PAK,TO263AB; 190ns
Mounting: SMD
Power dissipation: 540W
Gate charge: 63nC
Technology: HiPerFET™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Case: D2PAK; TO263AB
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFH20N85X IXFH(P)20N85X.pdf
IXFH20N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO247-3; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK50N85X IXF_50N85X.pdf
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 70A; Idm: 110A; 780W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns
Pulsed drain current: 110A
Gate charge: 66nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT70N65X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; D3PAK,TO268
Type of transistor: N-MOSFET
Technology: X3-Class
Case: D3PAK; TO268
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFN170N65X2 IXFN170N65X2.pdf
IXFN170N65X2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 170A; SOT227B; screw; Idm: 340A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 170A
Power dissipation: 1.17kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 13mΩ
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 270ns
Pulsed drain current: 340A
Type of semiconductor module: MOSFET transistor
Gate charge: 434nC
Mechanical mounting: screw
Electrical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.