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IXTP16N50P IXTP16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
2+315.28 грн
10+184.51 грн
50+177.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA16N50P3 IXFA16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
3+177.95 грн
10+156.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTT16N50D2 IXTT16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXTQ16N50P IXTQ16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXFH16N50P IXFH16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFA16N50P IXFA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXFH16N50P3 IXFH16N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTA16N50P IXTA16N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ22N50P IXTQ22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
2+408.89 грн
10+314.90 грн
30+289.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P IXYS IXFH22N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
2+423.91 грн
10+310.80 грн
30+287.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH22N50P IXTH22N50P IXYS IXTH(Q,V)22N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 663 шт:
термін постачання 21-30 дні (днів)
3+149.25 грн
10+104.15 грн
50+101.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR CPC1125NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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IXTH120P065T IXTH120P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
1+572.27 грн
10+428.89 грн
30+375.59 грн
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IXFT140N20X3HV IXFT140N20X3HV IXYS IXF_140N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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LAA100P LAA100P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
2+319.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB CLA50E1200TC-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
1+600.53 грн
10+478.91 грн
30+420.69 грн
В кошику  од. на суму  грн.
IXFT150N20T IXFT150N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1135NTR CPC1135NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFH170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 IXYS media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFH44N50P IXFH44N50P IXYS IXFK44N50P.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
1+840.75 грн
6+681.47 грн
10+592.08 грн
30+554.36 грн
В кошику  од. на суму  грн.
IXFH40N50Q IXFH40N50Q IXYS IXFH40N50Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1523.42 грн
3+1255.51 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTQ40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTT40N50L2 IXYS IXTH(T,Q)40N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1216.08 грн
3+996.37 грн
10+900.42 грн
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IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+633.21 грн
3+538.78 грн
5+514.18 грн
10+479.73 грн
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IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 IXTY14N60X2 IXYS ixty2n65x2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
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CPC1966Y CPC1966Y IXYS CPC1966.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
2+400.95 грн
10+323.10 грн
25+289.48 грн
100+273.90 грн
Мінімальне замовлення: 2
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IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+181.93 грн
5+151.71 грн
25+133.67 грн
70+127.93 грн
Мінімальне замовлення: 3
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IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
1+448.63 грн
10+389.53 грн
50+321.46 грн
100+284.56 грн
250+277.18 грн
В кошику  од. на суму  грн.
IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ14N60P IXTQ14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+404.48 грн
10+319.00 грн
25+264.06 грн
50+248.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
1+1430.69 грн
5+1169.40 грн
10+1088.22 грн
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+598.77 грн
10+494.50 грн
50+434.63 грн
100+407.57 грн
250+378.87 грн
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FDA217S FDA217S IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+226.08 грн
3+191.89 грн
5+180.41 грн
10+174.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 670nC
Reverse recovery time: 140ns
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
1+2098.34 грн
5+1668.82 грн
10+1653.24 грн
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MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3567.88 грн
3+2925.97 грн
10+2630.75 грн
20+2627.47 грн
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTP10P15T IXTP10P15T IXYS IXT_10P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
3+181.93 грн
10+136.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
2+253.46 грн
100+218.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+329.41 грн
10+245.20 грн
50+223.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
1+689.73 грн
3+586.34 грн
5+546.98 грн
10+483.83 грн
50+448.57 грн
В кошику  од. на суму  грн.
IXFP270N06T3 IXFP270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
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IXFA270N06T3 IXFA270N06T3 IXYS IXxx270N06T3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+412.43 грн
3+345.24 грн
10+305.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
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IXTP16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+315.28 грн
10+184.51 грн
50+177.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFA16N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+177.95 грн
10+156.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTT16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTT16N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
товару немає в наявності
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IXTQ16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTQ16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFH16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA16N50P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEA6DD3183E58BF&compId=IXF_16N50P.pdf?ci_sign=2631c8f6dc7ac34e6e7b7c4e413dbe89b86fe7d7
IXFA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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В кошику  од. на суму  грн.
IXFH16N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CED3DAD721478BF&compId=IXF_16N50P3.pdf?ci_sign=3cf1dcbda0c3debe79a98653f51f690525bb49da
IXFH16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA16N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9067D8D9423E27&compId=IXTP16N50P-DTE.pdf?ci_sign=3ef90a423153489401ddc91865f2d49d78e456f1
IXTA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ22N50P IXTH(Q,V)22N50P_S.pdf
IXTQ22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+408.89 грн
10+314.90 грн
30+289.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH22N50P IXFH22N50P.pdf
IXFH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+423.91 грн
10+310.80 грн
30+287.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH22N50P IXTH(Q,V)22N50P_S.pdf
IXTH22N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; 350W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 22A
Power dissipation: 350W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 35Ω
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 663 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+149.25 грн
10+104.15 грн
50+101.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1125NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20B60C7&compId=CPC1125N.pdf?ci_sign=37beec7290e33484c75fff726185ce9ab1651de2
CPC1125NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 100mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
IXTH120P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B2A73C5A98BF&compId=IXT_120P065T.pdf?ci_sign=5825eced03e83efccef79458a32fe4ed6d717ef7
IXTH120P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO247-3
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -120A
Gate charge: 185nC
Reverse recovery time: 53ns
On-state resistance: 10mΩ
Gate-source voltage: ±15V
Power dissipation: 298W
на замовлення 40 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+572.27 грн
10+428.89 грн
30+375.59 грн
В кошику  од. на суму  грн.
IXFT140N20X3HV IXF_140N20X3_HV.pdf 200VProductBrief.pdf
IXFT140N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
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LAA100P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+319.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA50E1200TC-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF06C1A1D9BB8BF&compId=CLA50E1200TC.pdf?ci_sign=b629e30eda934e1f86d73525caad02b28cb70d3d
CLA50E1200TC-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 79A; 50A; Igt: 50/80mA; D3PAK; SMD; tube
Max. off-state voltage: 1.2kV
Load current: 50A
Case: D3PAK
Mounting: SMD
Max. load current: 79A
Max. forward impulse current: 555A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
на замовлення 111 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+600.53 грн
10+478.91 грн
30+420.69 грн
В кошику  од. на суму  грн.
IXFT150N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CE0509EDC31820&compId=IXFH(T)150N20T.pdf?ci_sign=1eb8849a53fa359ec9a3208d53f9c1a524823d86
IXFT150N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1135NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 2ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFH170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFQ170N15X3 media?resourcetype=datasheets&itemid=c5c224fa-81a8-4c2d-8c6f-8426796fa09e&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_170n15x3_datasheet.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 170A; Idm: 340A
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 170A
Pulsed drain current: 340A
Power dissipation: 520W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
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IXFH44N50P description IXFK44N50P.pdf
IXFH44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 658W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 658W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar™
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+840.75 грн
6+681.47 грн
10+592.08 грн
30+554.36 грн
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IXFH40N50Q IXFH40N50Q.pdf
IXFH40N50Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1523.42 грн
3+1255.51 грн
В кошику  од. на суму  грн.
IXTH40N50L2 IXTH(T,Q)40N50L2.pdf
IXTH40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTQ40N50L2 IXTH(T,Q)40N50L2.pdf
IXTQ40N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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IXTT40N50L2 IXTH(T,Q)40N50L2.pdf
IXTT40N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 0.32µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: linear power mosfet
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VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1216.08 грн
3+996.37 грн
10+900.42 грн
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IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+633.21 грн
3+538.78 грн
5+514.18 грн
10+479.73 грн
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IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTY14N60X2 ixty2n65x2.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
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CPC1966Y CPC1966.pdf
CPC1966Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.95 грн
10+323.10 грн
25+289.48 грн
100+273.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+181.93 грн
5+151.71 грн
25+133.67 грн
70+127.93 грн
Мінімальне замовлення: 3
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IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+448.63 грн
10+389.53 грн
50+321.46 грн
100+284.56 грн
250+277.18 грн
В кошику  од. на суму  грн.
IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ14N60P IXTA(P,Q)14N60P.pdf
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+404.48 грн
10+319.00 грн
25+264.06 грн
50+248.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1430.69 грн
5+1169.40 грн
10+1088.22 грн
В кошику  од. на суму  грн.
IXFP26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+598.77 грн
10+494.50 грн
50+434.63 грн
100+407.57 грн
250+378.87 грн
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FDA217S pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+226.08 грн
3+191.89 грн
5+180.41 грн
10+174.67 грн
Мінімальне замовлення: 2
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IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 670nC
Reverse recovery time: 140ns
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2098.34 грн
5+1668.82 грн
10+1653.24 грн
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MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3567.88 грн
3+2925.97 грн
10+2630.75 грн
20+2627.47 грн
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IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTP10P15T IXT_10P15T.pdf
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+181.93 грн
10+136.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+253.46 грн
100+218.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+329.41 грн
10+245.20 грн
50+223.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+689.73 грн
3+586.34 грн
5+546.98 грн
10+483.83 грн
50+448.57 грн
В кошику  од. на суму  грн.
IXFP270N06T3 IXxx270N06T3-DTE.pdf
IXFP270N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA270N06T3 IXxx270N06T3-DTE.pdf
IXFA270N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+412.43 грн
3+345.24 грн
10+305.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
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