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IXTT10N100D2-TRL IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
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 Мінімальне замовлення: 400 шт
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IXTT110N10L2 IXTT110N10L2 IXYS IXTH(T)110N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTQ110N10P IXTQ110N10P IXYS IXTQ110N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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IXTT110N10L2-TRL IXYS PdfFile135152.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
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IXTT110N10P IXTT110N10P IXYS IXTQ110N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
Mounting: THT
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
2+426.08 грн
5+232.63 грн
12+220.74 грн
100+215.65 грн
Мінімальне замовлення: 2 шт
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DMA30P1600HR DMA30P1600HR IXYS DMA30P1600HR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+652.83 грн
3+545.92 грн
10+482.24 грн
30+441.49 грн
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MDNA50P2200TG IXYS MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA700P2200CC IXYS littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13 Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
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MCNA55P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA120P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA150P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 150A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
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MCNA180P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 180A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
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MCNA220P2200YA IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCNA40P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA650P2200CA IXYS Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
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MCNA75P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA95P2200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA140P2200TG IXYS MDNA140P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA380P2200KC IXYS MDNA380P2200KC.pdf LFPCN250210_Y1-screw.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
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IXTA380N036T4-7-TR IXYS littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
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 Мінімальне замовлення: 800 шт
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CPC1706Y CPC1706Y IXYS CPC1706.pdf Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
2+431.56 грн
10+337.91 грн
25+314.99 грн
Мінімальне замовлення: 2 шт
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IXFZ140N25T IXYS IXFZ140N25T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGH16N170A IXGH16N170A IXYS IXGH(t)16N170A_H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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DSEI2X101-12A DSEI2X101-12A IXYS DSEI2X101-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
1+3816.40 грн
5+3163.44 грн
10+3128.63 грн
В кошику  од. на суму  грн.
IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
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 Мінімальне замовлення: 300 шт
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IXFH34N50P3 IXFH34N50P3 IXYS IXFH(Q)34N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+720.49 грн
10+480.54 грн
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IXFX64N50P IXFX64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
1+1273.66 грн
5+1049.38 грн
10+983.16 грн
30+894.01 грн
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IXFN64N50P IXFN64N50P IXYS IXFN64N50P.pdf description Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
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IXFN94N50P2 IXFN94N50P2 IXYS IXFN94N50P2.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
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IXFK94N50P2 IXFK94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N50P IXFR44N50P IXYS IXFR44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFK64N50P IXFK64N50P IXYS IXFK(X)64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFK64N50Q3 IXFK64N50Q3 IXYS IXFK(X)64N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFX94N50P2 IXFX94N50P2 IXYS IXFx94N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
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IXFH44N50Q3 IXFH44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFK44N50P IXFK44N50P IXYS IXFK44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFR64N50P IXFR64N50P IXYS IXFR64N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
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IXFX64N50Q3 IXFX64N50Q3 IXYS IXFK(X)64N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFX74N50P2 IXFX74N50P2 IXYS IXFK(X)74N50P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ44N50P IXTQ44N50P IXYS IXTQ44N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFQ34N50P3 IXFQ34N50P3 IXYS IXFH(Q)34N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXFR64N50Q3 IXFR64N50Q3 IXYS IXFR64N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50P IXFT44N50P IXYS IXFK44N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50Q3 IXFT44N50Q3 IXYS IXFH(T)44N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFP20N50P3 IXFP20N50P3 IXYS media?resourcetype=datasheets&itemid=17D5B834-F5FE-4724-BEF9-F55D728D93A8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-20N50P3-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 20A; 380W; TO220-3; 250ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 250ns
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 Мінімальне замовлення: 300 шт
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DSA120X200LB-TUB DSA120X200LB-TUB IXYS DSA120X200LB.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Mounting: SMD
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Case: SMPD
Type of diode: Schottky rectifying
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1218.80 грн
В кошику  од. на суму  грн.
DSSK60-015A DSSK60-015A IXYS DSSK60-015A_AR.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
1+526.65 грн
3+439.79 грн
10+388.85 грн
В кошику  од. на суму  грн.
IX4428MTR IX4428MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
5+91.43 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
MUBW25-06A6K IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 40A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
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DSA20C100PN DSA20C100PN IXYS DSA20C100PN.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.71V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
7+70.40 грн
8+58.58 грн
10+51.79 грн
22+45.85 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
DSA20C45PB DSA20C45PB IXYS DSA20C45PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.61V
Max. forward impulse current: 260A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 45W
на замовлення 302 шт:
термін постачання 14-30 дні (днів)
16+30.17 грн
Мінімальне замовлення: 16 шт
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MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
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IXTH26N60P IXTH26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTQ26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTT26N60P IXTT26N60P IXYS IXTH(Q,T,V)26N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP36P15P IXTP36P15P IXYS IXT_36P15P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
на замовлення 183 шт:
термін постачання 14-30 дні (днів)
1+587.91 грн
5+432.15 грн
10+382.06 грн
50+301.40 грн
100+286.97 грн
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IXTP36N30P IXTP36N30P IXYS IXTA36N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
2+364.82 грн
5+288.67 грн
10+270.84 грн
15+260.65 грн
25+247.06 грн
30+242.82 грн
50+240.27 грн
Мінімальне замовлення: 2 шт
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IXTT10N100D2-TRL
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 1kV; 10A; 695W; D3PAK,TO268; 1.2us
Type of transistor: N-MOSFET
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: D3PAK; TO268
Gate-source voltage: 20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 200nC
Reverse recovery time: 1.2µs
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Мінімальне замовлення: 400 шт
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IXTT110N10L2 IXTH(T)110N10L2.pdf
IXTT110N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTQ110N10P IXTQ110N10P-DTE.pdf
IXTQ110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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IXTT110N10L2-TRL PdfFile135152.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 110A; 600W; D3PAK,TO268; 230ns
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: D3PAK; TO268
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 260nC
Reverse recovery time: 230ns
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Мінімальне замовлення: 400 шт
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IXTT110N10P IXTQ110N10P-DTE.pdf
IXTT110N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Power dissipation: 430W
Gate charge: 132nC
Polarisation: unipolar
Technology: Trench™
Drain current: 160A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 7mΩ
Reverse recovery time: 60ns
Mounting: THT
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+426.08 грн
5+232.63 грн
12+220.74 грн
100+215.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DMA30P1600HR DMA30P1600HR.pdf
DMA30P1600HR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; Ifsm: 255A; ISO247™; tube; 115W
Mounting: THT
Max. forward impulse current: 255A
Max. forward voltage: 1.23V
Power dissipation: 115W
Max. off-state voltage: 1.6kV
Load current: 30A
Kind of package: tube
Semiconductor structure: double series
Case: ISO247™
Type of diode: rectifying
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+652.83 грн
3+545.92 грн
10+482.24 грн
30+441.49 грн
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MDNA50P2200TG MDNA50P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Max. forward impulse current: 850A
Max. forward voltage: 1.09V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 50A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA700P2200CC littelfuse-diode-modules-dual-mdna700p2200cc-datasheet?assetguid=c926db6b-d806-48cc-a63f-5ae7c494cb13
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 700A; ComPack; Ufmax: 1.05V
Max. forward impulse current: 20kA
Max. forward voltage: 1.05V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 700A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
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MCNA55P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 55A; TO240AA; Ufmax: 1.56V
Gate current: 95/200mA
Max. forward voltage: 1.56V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 55A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA120P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 120A; TO240AA; screw
Gate current: 100/200mA
Max. forward voltage: 1.78V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 120A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA150P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 150A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 150A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
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MCNA180P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 180A; Y4-M6; Ufmax: 1.51V
Max. off-state voltage: 2.2kV
Load current: 180A
Electrical mounting: screw
Max. forward voltage: 1.51V
Case: Y4-M6
Mechanical mounting: screw
Gate current: 150/200mA
Type of semiconductor module: thyristor
Kind of package: bulk
Semiconductor structure: double series
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MCNA220P2200YA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 220A; Y4-M6; Ufmax: 1.53V
Gate current: 150/200mA
Max. forward voltage: 1.53V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 220A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
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MCNA40P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 40A; TO240AA; Ufmax: 1.74V
Gate current: 70/150mA
Max. forward voltage: 1.74V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 40A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA650P2200CA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 650A; ComPack; screw
Gate current: 300/400mA
Max. forward voltage: 1.59V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 650A
Kind of package: bulk
Semiconductor structure: double series
Case: ComPack
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MCNA75P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 75A; TO240AA; Ufmax: 1.58V
Gate current: 95/200mA
Max. forward voltage: 1.58V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 75A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MCNA95P2200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 95A; TO240AA; Ufmax: 1.63V
Gate current: 150/200mA
Max. forward voltage: 1.63V
Type of semiconductor module: thyristor
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 95A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA140P2200TG MDNA140P2200TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Max. forward impulse current: 2.8kA
Max. forward voltage: 1.11V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 140A
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
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MDNA380P2200KC MDNA380P2200KC.pdf LFPCN250210_Y1-screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 380A; Y1-CU; Ufmax: 0.93V
Max. forward impulse current: 11kA
Max. forward voltage: 0.93V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 2.2kV
Electrical mounting: screw
Load current: 380A
Kind of package: bulk
Semiconductor structure: double series
Case: Y1-CU
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IXTA380N036T4-7-TR littelfuse-discrete-mosfets-ixta380n036t4-7-datasheet?assetguid=04797cbd-9371-4764-a893-7e7a8a8aadea
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
Gate-source voltage: 15V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Reverse recovery time: 54ns
Gate charge: 260nC
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
CPC1706Y CPC1706.pdf
CPC1706Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Mounting: THT
Control current max.: 50mA
On-state resistance: 90mΩ
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: current source
Kind of output: MOSFET
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 2.5kV
Turn-on time: 5ms
Switched voltage: max. 60V DC
Case: SOP4
Max. operating current: 4A
Turn-off time: 2ms
на замовлення 724 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+431.56 грн
10+337.91 грн
25+314.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFZ140N25T IXFZ140N25T.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 100A; 445W; DE475
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 100A
Power dissipation: 445W
Case: DE475
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXGH16N170A IXGH(t)16N170A_H1.pdf
IXGH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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DSEI2X101-12A description DSEI2X101-12A.pdf
DSEI2X101-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 91Ax2; SOT227B; screw
Type of semiconductor module: diode
Semiconductor structure: double independent
Max. off-state voltage: 1.2kV
Load current: 91A x2
Case: SOT227B
Max. forward voltage: 1.87V
Max. forward impulse current: 970A
Electrical mounting: screw
Max. load current: 182A
Mechanical mounting: screw
Kind of package: tube
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3816.40 грн
5+3163.44 грн
10+3128.63 грн
В кошику  од. на суму  грн.
IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
IXYA55N65B5
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 395W; D2PAK
Type of transistor: IGBT
Power dissipation: 395W
Case: D2PAK
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Collector current: 55A
Collector-emitter voltage: 650V
Pulsed collector current: 250A
Turn-off time: 200ns
Gate-emitter voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH34N50P3 IXFH(Q)34N50P3.pdf
IXFH34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Case: TO247-3
On-state resistance: 0.18Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 695W
Gate charge: 60nC
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+720.49 грн
10+480.54 грн
В кошику  од. на суму  грн.
IXFX64N50P IXFK(X)64N50P.pdf
IXFX64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 184 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1273.66 грн
5+1049.38 грн
10+983.16 грн
30+894.01 грн
В кошику  од. на суму  грн.
IXFN64N50P description IXFN64N50P.pdf
IXFN64N50P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 50A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Pulsed drain current: 150A
Power dissipation: 625W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 85mΩ
Gate charge: 150nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 200ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
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IXFN94N50P2 IXFN94N50P2.pdf
IXFN94N50P2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 68A; SOT227B; screw; Idm: 240A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 68A
Pulsed drain current: 240A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 55mΩ
Gate charge: 0.22µC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar2™
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IXFK94N50P2 IXFx94N50P2.pdf
IXFK94N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 94A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
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IXFR44N50P IXFR44N50P.pdf
IXFR44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFK64N50P IXFK(X)64N50P.pdf
IXFK64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 830W
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
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IXFK64N50Q3 IXFK(X)64N50Q3.pdf
IXFK64N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: TO264
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFX94N50P2 IXFx94N50P2.pdf
IXFX94N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 94A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 94A
Power dissipation: 1.3kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 228nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar2™
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IXFH44N50Q3 IXFH(T)44N50Q3.pdf
IXFH44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFK44N50P IXFK44N50P.pdf
IXFK44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 44A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFR64N50P IXFR64N50P.pdf
IXFR64N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 37A; 300W; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37A
Power dissipation: 300W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; PolarHV™
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IXFX64N50Q3 IXFK(X)64N50Q3.pdf
IXFX64N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 64A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFX74N50P2 IXFK(X)74N50P2.pdf
IXFX74N50P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 74A; 1400W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 74A
Power dissipation: 1.4kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ44N50P IXTQ44N50P.pdf
IXTQ44N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFQ34N50P3 IXFH(Q)34N50P3.pdf
IXFQ34N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXFR64N50Q3 IXFR64N50Q3.pdf
IXFR64N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 45A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 45A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50P IXFK44N50P.pdf
IXFT44N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT44N50Q3 IXFH(T)44N50Q3.pdf
IXFT44N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFP20N50P3 media?resourcetype=datasheets&itemid=17D5B834-F5FE-4724-BEF9-F55D728D93A8&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-20N50P3-Datasheet.PDF
IXFP20N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 500V; 20A; 380W; TO220-3; 250ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 380W
Case: TO220-3
Gate-source voltage: 30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
DSA120X200LB-TUB DSA120X200LB.pdf
DSA120X200LB-TUB
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; tube; 185W
Mounting: SMD
Max. off-state voltage: 200V
Load current: 65A x2
Kind of package: tube
Semiconductor structure: double independent
Case: SMPD
Type of diode: Schottky rectifying
Max. forward impulse current: 700A
Max. forward voltage: 0.67V
Power dissipation: 185W
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1218.80 грн
В кошику  од. на суму  грн.
DSSK60-015A description DSSK60-015A_AR.pdf
DSSK60-015A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO247-3; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.69V
Max. forward impulse current: 0.6kA
Power dissipation: 190W
Kind of package: tube
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+526.65 грн
3+439.79 грн
10+388.85 грн
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IX4428MTR IX4426-27-28.pdf
IX4428MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Mounting: SMD
Number of channels: 2
Supply voltage: 4.5...30V
Output current: -1.5...1.5A
Type of integrated circuit: driver
Kind of output: inverting; non-inverting
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of integrated circuit: low-side; MOSFET gate driver
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+91.43 грн
Мінімальне замовлення: 5 шт
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MUBW25-06A6K
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Technology: NPT
Mechanical mounting: screw
Pulsed collector current: 40A
Application: motors
Max. off-state voltage: 0.6kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
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DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
Case: TO247-3
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DSA20C100PN DSA20C100PN.pdf
DSA20C100PN
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; Ufmax: 0.71V
Type of diode: Schottky rectifying
Case: TO220FP
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.71V
Max. forward impulse current: 0.24kA
Kind of package: tube
Power dissipation: 35W
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+70.40 грн
8+58.58 грн
10+51.79 грн
22+45.85 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
DSA20C45PB DSA20C45PB.pdf
DSA20C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10Ax2; TO220AB; Ufmax: 0.61V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.61V
Max. forward impulse current: 260A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 45W
на замовлення 302 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
16+30.17 грн
Мінімальне замовлення: 16 шт
В кошику  од. на суму  грн.
MIXA60HU1200VA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; buck chopper; H-bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: V1-A-Pack
Electrical mounting: FASTON connectors
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Power dissipation: 290W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
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IXTH26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTH26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTQ26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTT26N60P IXTH(Q,T,V)26N60P_S.pdf
IXTT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTP36P15P IXT_36P15P.pdf
IXTP36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Reverse recovery time: 228ns
Mounting: THT
Power dissipation: 300W
Gate charge: 55nC
Polarisation: unipolar
Technology: PolarP™
Drain current: -36A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 0.11Ω
на замовлення 183 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+587.91 грн
5+432.15 грн
10+382.06 грн
50+301.40 грн
100+286.97 грн
В кошику  од. на суму  грн.
IXTP36N30P IXTA36N30P-DTE.pdf
IXTP36N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+364.82 грн
5+288.67 грн
10+270.84 грн
15+260.65 грн
25+247.06 грн
30+242.82 грн
50+240.27 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.