| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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LDA110STR | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A Kind of output: Darlington Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 8µs Turn-off time: 345µs Number of channels: 1 Trigger current: 1A CTR@If: 300-30000%@1mA Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MDD312-22N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2.2kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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MDD312-18N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.8kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 310A Max. forward impulse current: 10.8kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MDD312-16N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.6kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MDD312-12N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.2kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 520A Max. forward impulse current: 9.18kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCD312-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.8kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Electrical mounting: screw Mechanical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MCD312-14io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.4kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Electrical mounting: screw Mechanical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MDD312-14N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 1.4kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 310A Max. forward impulse current: 10.8kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MDD312-20N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V Case: Y1-CU Max. off-state voltage: 2kV Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 1.03V Load current: 310A Max. load current: 310A Max. forward impulse current: 10.8kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MCD312-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw Case: Y1-CU Max. off-state voltage: 1.2kV Type of semiconductor module: diode-thyristor Semiconductor structure: double series Features of semiconductor devices: Kelvin terminal Electrical mounting: screw Mechanical mounting: screw Gate current: 150/220mA Threshold on-voltage: 0.8V Max. forward voltage: 1.06V Load current: 320A Max. load current: 520A Max. forward impulse current: 9.6kA Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CPC1976Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 240V AC Relay variant: 1-phase Mounting: THT Case: SIP4 Body dimensions: 21.08x10.16x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
на замовлення 494 шт: термін постачання 21-30 дні (днів) |
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CPC1393GR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC Mounting: SMT Case: DIP4 Operating temperature: -40...85°C Kind of output: MOSFET Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Max. operating current: 90mA On-state resistance: 50Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 5kV Type of relay: solid state Manufacturer series: OptoMOS Contacts configuration: SPST-NO Body dimensions: 4.57x6.35x3.3mm |
на замовлення 675 шт: термін постачання 21-30 дні (днів) |
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CPC1963G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase Type of relay: solid state Max. operating current: 0.5A Switched voltage: max. 600V AC Relay variant: 1-phase Body dimensions: 9.65x6.35x3.3mm Switching method: zero voltage switching Operating temperature: -40...85°C Control current max.: 50mA Insulation voltage: 3.75kV Case: DIP6 Mounting: THT |
на замовлення 334 шт: термін постачання 21-30 дні (днів) |
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IXFN180N25T | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 250V Drain current: 168A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 12.9mΩ Pulsed drain current: 500A Power dissipation: 900W Technology: GigaMOS™ Gate-source voltage: ±30V Mechanical mounting: screw Reverse recovery time: 200ns Gate charge: 364nC Kind of channel: enhancement |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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| MCMA25P1600TA | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V Kind of package: bulk Type of semiconductor module: thyristor Semiconductor structure: double series Electrical mounting: screw Mechanical mounting: screw Case: TO240AA Gate current: 55/80mA Max. forward voltage: 1.52V Load current: 25A Max. off-state voltage: 1.6kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MDMA425P1600PTSF | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Electrical mounting: Press-Fit Mechanical mounting: screw Case: SimBus F Load current: 425A Max. off-state voltage: 1.6kV Max. forward impulse current: 10kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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VUO52-16NO1 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors Leads dimensions: 2x0.5mm Case: V1-A-Pack Mechanical mounting: screw |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
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IXDN604PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -4...4A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 238 шт: термін постачання 21-30 дні (днів) |
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IXDN604SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
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IXDN604SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
на замовлення 879 шт: термін постачання 21-30 дні (днів) |
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IXDN604SIATR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -4...4A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 81ns Turn-off time: 79ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXDN602D2TR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DFN8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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IXTN110N20L2 | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A Polarisation: unipolar Drain-source voltage: 200V Drain current: 100A Pulsed drain current: 275A Power dissipation: 735W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 24mΩ Gate charge: 500nC Kind of channel: enhancement Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor Technology: Linear L2™ Reverse recovery time: 420ns Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXTK110N20L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: TO264 On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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OMA160 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Operating temperature: -40...85°C Manufacturer series: OptoMOS Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Turn-on time: 125µs Turn-off time: 125µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 75 шт: термін постачання 21-30 дні (днів) |
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CPC1030NTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Switched voltage: max. 350V AC; max. 350V DC Operating temperature: -40...85°C Manufacturer series: OptoMOS Insulation voltage: 1.5kV Kind of output: MOSFET Mounting: SMT Type of relay: solid state Case: SOP4 Contacts configuration: SPST-NO Turn-on time: 2ms Turn-off time: 1ms Body dimensions: 4.09x3.81x2.03mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 30Ω Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CPC1706Y | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω Type of relay: solid state Max. operating current: 4A Switched voltage: max. 60V DC Mounting: THT Case: SOP4 Relay variant: current source Manufacturer series: OptoMOS Body dimensions: 21.08x10.16x3.3mm Turn-on time: 5ms Turn-off time: 2ms Contacts configuration: SPST-NO On-state resistance: 90mΩ Control current max.: 50mA Kind of output: MOSFET Insulation voltage: 2.5kV Operating temperature: -40...85°C |
на замовлення 449 шт: термін постачання 21-30 дні (днів) |
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VHFD37-16IO1 | IXYS |
Category: Single phase controlled bridge rectif.Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 280A Gate current: 50/80mA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors Leads dimensions: 2x0.5mm Features of semiconductor devices: field diodes; freewheelling diode |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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PLA191S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 1ms Body dimensions: 8.38x6.35x3.3mm Max. operating current: 250mA Control current max.: 50mA On-state resistance: 8Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 5kV Relay variant: 1-phase; current source Case: DIP6 Type of relay: solid state Contacts configuration: SPST-NO |
на замовлення 199 шт: термін постачання 21-30 дні (днів) |
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DSEI30-10A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 185A Case: TO247-2 Max. forward voltage: 2V Power dissipation: 138W Reverse recovery time: 35ns Technology: FRED |
на замовлення 196 шт: термін постачання 21-30 дні (днів) |
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IXFH120N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3 Case: TO247-3 Mounting: THT Gate charge: 152nC Reverse recovery time: 100ns On-state resistance: 22mΩ Drain current: 120A Power dissipation: 714W Drain-source voltage: 200V Kind of package: tube Kind of channel: enhancement Technology: HiPerFET™; Polar™ Polarisation: unipolar Type of transistor: N-MOSFET |
на замовлення 53 шт: термін постачання 21-30 дні (днів) |
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IXXH100N60B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3 Mounting: THT Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 600V Power dissipation: 830W Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Case: TO247-3 Kind of package: tube Turn-on time: 92ns Gate charge: 143nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXDN609SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1340 шт: термін постачання 21-30 дні (днів) |
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IXDN609SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -9...9A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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| LF2136BTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Number of channels: 6 Voltage class: 600V Kind of package: reel; tape Case: SO28 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PBA150S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA Mounting: SMT Turn-on time: 2.5ms Turn-off time: 2.5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA On-state resistance: 7Ω Switched voltage: max. 250V AC; max. 250V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Operating temperature: -40...85°C |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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IXTA50N20P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IXFA34N65X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IXFH34N65X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Pulsed drain current: 48A Power dissipation: 446W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: HiPerFET™; X3-Class |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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CPC2907B | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS Case: PowerSO8 Mounting: SMT Kind of output: MOSFET Contacts configuration: SPST-NO x2 Type of relay: solid state Operating temperature: -40...85°C Turn-off time: 0.25ms Turn-on time: 2.5ms On-state resistance: 0.15Ω Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Max. operating current: 2A Switched voltage: max. 60V AC; max. 60V DC Insulation voltage: 4kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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IXFR44N80P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 26A Power dissipation: 360W Case: ISOPLUS247™ On-state resistance: 0.19Ω Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXDN614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
на замовлення 82 шт: термін постачання 21-30 дні (днів) |
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CPC1981Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 180mA Switched voltage: max. 1kV AC Manufacturer series: OptoMOS Relay variant: 1-phase On-state resistance: 18Ω Mounting: THT Case: SIP4 Operating temperature: -40...85°C Turn-on time: 10ms Turn-off time: 5ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA Insulation voltage: 2.5kV Kind of output: MOSFET |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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DSA15IM200UC | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 200V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. forward impulse current: 200A Kind of package: reel; tape Power dissipation: 75W |
на замовлення 1739 шт: термін постачання 21-30 дні (днів) |
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IXDN602PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -2...2A Number of channels: 2 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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IXDN602SIA | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 93ns Turn-off time: 93ns |
на замовлення 569 шт: термін постачання 21-30 дні (днів) |
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CPC1965G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x7.62x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 260V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP4 |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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MEK300-06DA | IXYS |
Category: Diode modulesDescription: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Type of semiconductor module: diode Semiconductor structure: common cathode Max. off-state voltage: 0.6kV Load current: 304A Case: Y4-M6 Max. forward voltage: 1.19V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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CPC2330N | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA Case: SO8 Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Operating temperature: -40...85°C On-state resistance: 30Ω Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.35x3.81x2.18mm Control current max.: 50mA Max. operating current: 120mA Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 1.5kV Manufacturer series: OptoMOS |
на замовлення 479 шт: термін постачання 21-30 дні (днів) |
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IXTP450P2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 43nC Reverse recovery time: 400ns Power dissipation: 300W On-state resistance: 0.33Ω Drain current: 16A Drain-source voltage: 500V Polarisation: unipolar Case: TO220AB Kind of channel: enhancement Mounting: THT |
на замовлення 176 шт: термін постачання 21-30 дні (днів) |
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MCD162-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Max. off-state voltage: 1.8kV Load current: 181A Max. forward impulse current: 6kA Case: Y4-M6 Electrical mounting: FASTON connectors; screw Kind of package: bulk Max. forward voltage: 1.03V Gate current: 150/200mA Threshold on-voltage: 0.88V Max. load current: 300A Semiconductor structure: double series Type of semiconductor module: diode-thyristor Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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PD2401 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase Mounting: THT Type of relay: solid state Switching method: zero voltage switching Operating temperature: -40...85°C Body dimensions: 19.2x6.35x3.3mm Control current max.: 100mA Max. operating current: 1A Switched voltage: max. 500V AC Insulation voltage: 3.75kV Relay variant: 1-phase Case: DIP4 |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
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IXTP50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
на замовлення 206 шт: термін постачання 21-30 дні (днів) |
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IXTQ50N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: PolarHT™ |
на замовлення 258 шт: термін постачання 21-30 дні (днів) |
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IXTP50N20PM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 150ns Technology: Polar™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXTX110N20L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 110A Power dissipation: 960W Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: THT Gate charge: 500nC Kind of package: tube Kind of channel: enhancement Technology: Linear L2™ Reverse recovery time: 420ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXTH16N50D2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Power dissipation: 695W Case: TO247-3 On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: depletion Reverse recovery time: 130ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXKH47N60C | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Power dissipation: 290W Case: TO247-3 On-state resistance: 70mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IXXH80N65B4 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 625W Case: TO247-3 Mounting: THT Gate charge: 0.12µC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 125ns Turn-off time: 222ns Gate-emitter voltage: ±20V Collector current: 80A Pulsed collector current: 430A |
на замовлення 263 шт: термін постачання 21-30 дні (днів) |
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IXFH110N10P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3 Case: TO247-3 Kind of package: tube Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Gate charge: 110nC On-state resistance: 15mΩ Drain current: 110A Drain-source voltage: 100V Power dissipation: 480W Kind of channel: enhancement |
на замовлення 204 шт: термін постачання 21-30 дні (днів) |
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| LDA110STR |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; 1A
Kind of output: Darlington
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 8µs
Turn-off time: 345µs
Number of channels: 1
Trigger current: 1A
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
В кошику
од. на суму грн.
| MDD312-22N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 11016.58 грн |
| MDD312-18N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
товару немає в наявності
В кошику
од. на суму грн.
| MDD312-16N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
товару немає в наявності
В кошику
од. на суму грн.
| MDD312-12N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 520A
Max. forward impulse current: 9.18kA
товару немає в наявності
В кошику
од. на суму грн.
| MCD312-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| MCD312-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| MDD312-14N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 1.4kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
товару немає в наявності
В кошику
од. на суму грн.
| MDD312-20N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 310A; Y1-CU; Ufmax: 1.03V
Case: Y1-CU
Max. off-state voltage: 2kV
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.03V
Load current: 310A
Max. load current: 310A
Max. forward impulse current: 10.8kA
товару немає в наявності
В кошику
од. на суму грн.
| MCD312-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y1-CU; Ufmax: 1.06V; screw
Case: Y1-CU
Max. off-state voltage: 1.2kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.06V
Load current: 320A
Max. load current: 520A
Max. forward impulse current: 9.6kA
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| CPC1976Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.240VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 494 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.17 грн |
| 25+ | 273.65 грн |
| 250+ | 249.50 грн |
| CPC1393GR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
на замовлення 675 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.68 грн |
| 10+ | 130.39 грн |
| 25+ | 117.51 грн |
| 50+ | 111.87 грн |
| CPC1963G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 500mA; max.600VAC; 1-phase
Type of relay: solid state
Max. operating current: 0.5A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: DIP6
Mounting: THT
на замовлення 334 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 631.87 грн |
| 50+ | 384.72 грн |
| 250+ | 309.06 грн |
| IXFN180N25T |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 250V; 168A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 250V
Drain current: 168A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 12.9mΩ
Pulsed drain current: 500A
Power dissipation: 900W
Technology: GigaMOS™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 200ns
Gate charge: 364nC
Kind of channel: enhancement
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1945.02 грн |
| 5+ | 1537.27 грн |
| 10+ | 1488.17 грн |
| MCMA25P1600TA |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 25A; TO240AA; Ufmax: 1.52V
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Case: TO240AA
Gate current: 55/80mA
Max. forward voltage: 1.52V
Load current: 25A
Max. off-state voltage: 1.6kV
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| MDMA425P1600PTSF |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: Press-Fit
Mechanical mounting: screw
Case: SimBus F
Load current: 425A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
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| VUO52-16NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2094.97 грн |
| 5+ | 1883.36 грн |
| IXDN604PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 238 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 121.35 грн |
| 10+ | 82.10 грн |
| 50+ | 76.46 грн |
| IXDN604SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 626 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.28 грн |
| 10+ | 82.10 грн |
| IXDN604SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 879 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 193.29 грн |
| 50+ | 152.12 грн |
| 100+ | 141.65 грн |
| 200+ | 132.00 грн |
| 300+ | 129.58 грн |
| IXDN604SIATR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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| IXDN602D2TR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 152.55 грн |
| 10+ | 91.75 грн |
| 25+ | 78.07 грн |
| 50+ | 69.22 грн |
| 100+ | 61.97 грн |
| 250+ | 53.93 грн |
| 500+ | 53.12 грн |
| IXTN110N20L2 |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Pulsed drain current: 275A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Technology: Linear L2™
Reverse recovery time: 420ns
Semiconductor structure: single transistor
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| IXTK110N20L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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| OMA160 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 75 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 314.64 грн |
| 10+ | 239.04 грн |
| 25+ | 207.65 грн |
| CPC1030NTR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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| CPC1706Y |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 4000mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 4A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 5ms
Turn-off time: 2ms
Contacts configuration: SPST-NO
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
на замовлення 449 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 226.23 грн |
| 10+ | 174.65 грн |
| 25+ | 162.58 грн |
| VHFD37-16IO1 |
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Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2548.29 грн |
| 10+ | 2197.25 грн |
| PLA191S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 8Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 5kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 199 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 347.57 грн |
| 100+ | 246.28 грн |
| DSEI30-10A | ![]() |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 30A; tube; Ifsm: 185A; TO247-2; Ufmax: 2V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 185A
Case: TO247-2
Max. forward voltage: 2V
Power dissipation: 138W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.29 грн |
| IXFH120N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 120A; 714W; TO247-3
Case: TO247-3
Mounting: THT
Gate charge: 152nC
Reverse recovery time: 100ns
On-state resistance: 22mΩ
Drain current: 120A
Power dissipation: 714W
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Type of transistor: N-MOSFET
на замовлення 53 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 853.76 грн |
| 5+ | 638.25 грн |
| 10+ | 591.57 грн |
| IXXH100N60B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 830W; TO247-3
Mounting: THT
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 480A
Collector-emitter voltage: 600V
Power dissipation: 830W
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
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| IXDN609SI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 192.42 грн |
| 10+ | 129.58 грн |
| 25+ | 123.14 грн |
| 50+ | 118.31 грн |
| 100+ | 115.09 грн |
| IXDN609SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 116.15 грн |
| 10+ | 78.88 грн |
| 25+ | 74.05 грн |
| LF2136BTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
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| PBA150S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Turn-on time: 2.5ms
Turn-off time: 2.5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 528.73 грн |
| 10+ | 413.69 грн |
| IXTA50N20P |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
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| IXFA34N65X3 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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| IXFH34N65X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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| CPC2907B |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Case: PowerSO8
Mounting: SMT
Kind of output: MOSFET
Contacts configuration: SPST-NO x2
Type of relay: solid state
Operating temperature: -40...85°C
Turn-off time: 0.25ms
Turn-on time: 2.5ms
On-state resistance: 0.15Ω
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 4kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 695.15 грн |
| IXFR44N80P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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| IXDN614PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
на замовлення 82 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.03 грн |
| 10+ | 147.29 грн |
| 50+ | 114.29 грн |
| CPC1981Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 180mA; max.1kVAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 180mA
Switched voltage: max. 1kV AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 18Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 10ms
Turn-off time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 14 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 338.04 грн |
| 10+ | 243.87 грн |
| DSA15IM200UC |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
на замовлення 1739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.08 грн |
| 6+ | 78.07 грн |
| 25+ | 69.22 грн |
| 100+ | 62.78 грн |
| IXDN602PI |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.61 грн |
| 10+ | 58.75 грн |
| 25+ | 54.73 грн |
| IXDN602SIA |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 569 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 86.68 грн |
| 10+ | 56.34 грн |
| 25+ | 52.32 грн |
| CPC1965G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.260VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x7.62x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 260V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 305.10 грн |
| MEK300-06DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 304A
Case: Y4-M6
Max. forward voltage: 1.19V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 5148.58 грн |
| 2+ | 4708.39 грн |
| CPC2330N |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 120mA
Case: SO8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Operating temperature: -40...85°C
On-state resistance: 30Ω
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.35x3.81x2.18mm
Control current max.: 50mA
Max. operating current: 120mA
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
на замовлення 479 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 157.75 грн |
| 50+ | 121.53 грн |
| 150+ | 115.90 грн |
| IXTP450P2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Reverse recovery time: 400ns
Power dissipation: 300W
On-state resistance: 0.33Ω
Drain current: 16A
Drain-source voltage: 500V
Polarisation: unipolar
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
на замовлення 176 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 355.37 грн |
| 50+ | 177.07 грн |
| 100+ | 164.19 грн |
| MCD162-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Max. off-state voltage: 1.8kV
Load current: 181A
Max. forward impulse current: 6kA
Case: Y4-M6
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.03V
Gate current: 150/200mA
Threshold on-voltage: 0.88V
Max. load current: 300A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4830.48 грн |
| PD2401 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.500VAC; 1-phase
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 500V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Case: DIP4
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 437.72 грн |
| 25+ | 388.74 грн |
| IXTP50N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
на замовлення 206 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 296.43 грн |
| 10+ | 226.16 грн |
| 50+ | 199.60 грн |
| 100+ | 188.34 грн |
| IXTQ50N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
на замовлення 258 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 352.77 грн |
| 10+ | 268.02 грн |
| 30+ | 239.85 грн |
| 120+ | 206.04 грн |
| IXTP50N20PM |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: Polar™
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| IXTX110N20L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Technology: Linear L2™
Reverse recovery time: 420ns
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од. на суму грн.
| IXTH16N50D2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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| IXKH47N60C |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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В кошику
од. на суму грн.
| IXXH80N65B4 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
на замовлення 263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 585.07 грн |
| 10+ | 442.67 грн |
| 30+ | 342.06 грн |
| 120+ | 326.77 грн |
| IXFH110N10P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 110A; 480W; TO247-3
Case: TO247-3
Kind of package: tube
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 110nC
On-state resistance: 15mΩ
Drain current: 110A
Drain-source voltage: 100V
Power dissipation: 480W
Kind of channel: enhancement
на замовлення 204 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 525.26 грн |
| 5+ | 418.52 грн |
| 10+ | 380.70 грн |
| 20+ | 341.26 грн |
| 30+ | 317.92 грн |
| 120+ | 316.31 грн |




































