| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MDD26-16N1B | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 36A Case: TO240AA Max. forward voltage: 1.05V Max. forward impulse current: 555A Electrical mounting: screw Mechanical mounting: screw Max. load current: 60A |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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MDD255-12N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 270A x2 Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-20N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 450A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 450A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MDD26-08N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 800V; If: 36A; TO240AA; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 36A Case: TO240AA Max. forward voltage: 1.05V Max. forward impulse current: 555A Electrical mounting: screw Mechanical mounting: screw Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD200-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 8.93kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 350A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD255-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.8kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD26-18N1B | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 36A Case: TO240AA Max. forward voltage: 1.05V Max. forward impulse current: 0.65kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD200-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 10.5kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD200-16N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 8.93kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 350A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD200-18N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 224A Case: Y4-M6 Max. forward voltage: 1.07V Max. forward impulse current: 10.5kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD255-14N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.8kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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MDD255-22N1 | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 270A Case: Y1-CU Max. forward voltage: 1.4V Max. forward impulse current: 8.4kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 450A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXFK48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: TO264 On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXFH48N60X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 68A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 163ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IXFR48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Power dissipation: 500W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXFX48N60Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 1kW Case: PLUS247™ On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXFL210N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 108A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 16mΩ Mounting: THT Gate charge: 268nC Kind of channel: enhancement Kind of package: tube |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXFN210N30X3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Pulsed drain current: 650A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 4.6mΩ Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Semiconductor structure: single transistor Mechanical mounting: screw Electrical mounting: screw Type of semiconductor module: MOSFET transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFB210N30P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: THT Gate charge: 268nC Kind of channel: enhancement Reverse recovery time: 250ns Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
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IXFX210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 210A Power dissipation: 1.25kW Case: PLUS247™ Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 375nC Kind of channel: enhancement Reverse recovery time: 190ns Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
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IXFR44N50Q | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 34A Power dissipation: 313W Case: ISOPLUS247™ On-state resistance: 0.12Ω Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
на замовлення 213 шт: термін постачання 21-30 дні (днів) |
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IXFR44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 154mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXFH44N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO247-3 On-state resistance: 0.14Ω Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFR44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 24A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.15Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXFT44N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 98nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
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IXFT44N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 830W Case: TO268 On-state resistance: 0.14Ω Mounting: SMD Gate charge: 93nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
 |
IXTQ44N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 650W Case: TO3P On-state resistance: 0.14Ω Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 400ns |
товару немає в наявності |
В кошику од. на суму грн. |
| MDD26-16N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
на замовлення 24 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1615.21 грн |
| 2+ | 1418.32 грн |
| 5+ | 1417.52 грн |
| MDD255-12N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270Ax2; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 270A x2
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-20N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
товару немає в наявності
В кошику
од. на суму грн.
| MDD26-08N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 800V; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
Category: Diode modules
Description: Module: diode; double series; 800V; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 555A
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 60A
товару немає в наявності
В кошику
од. на суму грн.
| MDD200-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
товару немає в наявності
В кошику
од. на суму грн.
| MDD255-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MDD26-18N1B |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 36A; TO240AA; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 36A
Case: TO240AA
Max. forward voltage: 1.05V
Max. forward impulse current: 0.65kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MDD200-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MDD200-16N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 8.93kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 350A
товару немає в наявності
В кошику
од. на суму грн.
| MDD200-18N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 224A; Y4-M6; Ufmax: 1.07V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 224A
Case: Y4-M6
Max. forward voltage: 1.07V
Max. forward impulse current: 10.5kA
Electrical mounting: screw
Mechanical mounting: screw
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| MDD255-14N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.8kA
Electrical mounting: screw
Mechanical mounting: screw
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| MDD255-22N1 |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 270A
Case: Y1-CU
Max. forward voltage: 1.4V
Max. forward impulse current: 8.4kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 450A
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| IXFK48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: TO264
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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| IXFH48N60X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 163ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 600V; 48A; Idm: 68A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 68A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 163ns
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| IXFR48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Power dissipation: 500W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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| IXFX48N60Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 1000W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 1kW
Case: PLUS247™
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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| IXFL210N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 108A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 108A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Kind of package: tube
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 909.46 грн |
| IXFN210N30X3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Pulsed drain current: 650A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 210A; SOT227B; screw; Idm: 650A
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Pulsed drain current: 650A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
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| IXFB210N30P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Kind of package: tube
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| IXFX210N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; 190ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 190ns
Kind of package: tube
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| IXFR44N50Q |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 34A; 313W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 34A
Power dissipation: 313W
Case: ISOPLUS247™
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 213 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1391.04 грн |
| 2+ | 1221.24 грн |
| 30+ | 1210.95 грн |
| 120+ | 1174.54 грн |
| IXFR44N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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| IXFH44N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO247-3
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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| IXFR44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 208W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 208W
Case: ISOPLUS247™
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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| IXFT44N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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| IXFT44N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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| IXTQ44N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 650W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 650W
Case: TO3P
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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