Продукція > IXYS > Всі товари виробника IXYS (18090) > Сторінка 302 з 302

Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 297 298 299 300 301 302
Фото Назва Виробник Інформація Доступність
Ціна
IXTH16N20D2 IXTH16N20D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
товару немає в наявності
В кошику  од. на суму  грн.
IXTH16N50D2 IXTH16N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
товару немає в наявності
В кошику  од. на суму  грн.
IXTH16P60P IXTH16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
товару немає в наявності
В кошику  од. на суму  грн.
FDA217 FDA217 IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
2+400.26 грн
5+180.86 грн
14+170.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXKH47N60C IXKH47N60C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
DSA120X200LB-TRR IXYS Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1966YX8 CPC1966YX8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N50D2 IXTP3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
2+308.66 грн
5+195.42 грн
13+184.69 грн
250+177.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY3N50P IXTY3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
17+25.58 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IXTA3N50P IXTA3N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
6+70.97 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXTA3N50D2 IXTA3N50D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
товару немає в наявності
В кошику  од. на суму  грн.
IXDF602PI IXDF602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)
4+132.05 грн
10+75.10 грн
16+56.71 грн
44+53.64 грн
100+52.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDI602PI IXDI602PI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 979 шт:
термін постачання 21-30 дні (днів)
3+157.63 грн
10+89.66 грн
17+55.18 грн
46+52.11 грн
500+49.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTN32P60P IXTN32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
товару немає в наявності
В кошику  од. на суму  грн.
PLA172P PLA172P IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
товару немає в наявності
В кошику  од. на суму  грн.
PLA172PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFR40N90P IXFR40N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
товару немає в наявності
В кошику  од. на суму  грн.
MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA225RF1200TSF IXYS MIXA225RF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA425P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA300P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA300PF1200TSF IXYS MIXA300PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXG490PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA450PF1200TSF IXYS MIXA450PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
IX9907NTR IX9907NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
товару немає в наявності
В кошику  од. на суму  грн.
DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+1222.25 грн
3+1072.87 грн
10+1031.49 грн
В кошику  од. на суму  грн.
FUE30-12N1 FUE30-12N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
IXGX100N170 IXGX100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTH16N20D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D35574B86DF820&compId=IXTH(T)16N20D2.pdf?ci_sign=5ea239bb12406bc8372f9c07c4aea2c2ac1c0344
IXTH16N20D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; 695W; TO247-3; 607ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 607ns
On-state resistance: 80mΩ
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 200V
Drain current: 16A
товару немає в наявності
В кошику  од. на суму  грн.
IXTH16N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D5284A6D8B3820&compId=IXTH(T)16N50D2.pdf?ci_sign=3edd3d59cee7eb8d5cc1369911e3389d78c42005
IXTH16N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 130ns
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 695W
Polarisation: unipolar
Kind of channel: depletion
Drain-source voltage: 500V
Drain current: 16A
товару немає в наявності
В кошику  од. на суму  грн.
IXTH16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTH16P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Reverse recovery time: 440ns
On-state resistance: 720mΩ
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Gate charge: 92nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -600V
Drain current: -16A
товару немає в наявності
В кошику  од. на суму  грн.
FDA217 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Number of channels: 2
Mounting: THT
Operating temperature: -40...85°C
Kind of package: tube
на замовлення 90 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.26 грн
5+180.86 грн
14+170.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXKH47N60C pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC739820&compId=IXKH47N60C.pdf?ci_sign=43bb435c43c10b1bc34c0027e601cdcadb46f0c7
IXKH47N60C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
товару немає в наявності
В кошику  од. на суму  грн.
DSA120X200LB-TRR
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMPD; SMD; 200V; 65Ax2; reel,tape; 185W
Load current: 65A x2
Semiconductor structure: double independent
Max. forward impulse current: 700A
Power dissipation: 185W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMPD
Max. off-state voltage: 200V
Max. forward voltage: 0.67V
товару немає в наявності
В кошику  од. на суму  грн.
CPC1966YX8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82340C7&compId=CPC1966YX8.pdf?ci_sign=5ac36dc282a63f92d43596d60647d4c843e2c612
CPC1966YX8
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 3A
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 20µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTP3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTP3N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
на замовлення 277 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+308.66 грн
5+195.42 грн
13+184.69 грн
250+177.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTY3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO252; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.58 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
IXTA3N50P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90549A006FBE27&compId=IXTA3N50P-DTE.pdf?ci_sign=6bd0ab0b4408c3a770d9f2f03b9068091a9c03b4
IXTA3N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 3A; 70W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 70W
Gate charge: 9.3nC
Technology: Polar™
Reverse recovery time: 400ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+70.97 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXTA3N50D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBCC5F1A4EB820&compId=IXTA(P)3N50D2.pdf?ci_sign=1433b6210e8ee4e73eac19dda6d08b4459ecca40
IXTA3N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO263; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Case: TO263
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Power dissipation: 125W
Gate charge: 1.07µC
Reverse recovery time: 24ns
товару немає в наявності
В кошику  од. на суму  грн.
IXDF602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDF602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting; non-inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 1053 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+132.05 грн
10+75.10 грн
16+56.71 грн
44+53.64 грн
100+52.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDI602PI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D8766598F5858BF&compId=IXD_602.pdf?ci_sign=3e191a16a6efe3cbc7e087c32c0894f7463b8ad4
IXDI602PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -2÷2A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -2...2A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-on time: 93ns
Turn-off time: 93ns
на замовлення 979 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+157.63 грн
10+89.66 грн
17+55.18 грн
46+52.11 грн
500+49.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTN32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f
IXTN32P60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Case: SOT227B
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Gate charge: 196nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: -96A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Reverse recovery time: 480ns
Drain-source voltage: -600V
Drain current: -32A
On-state resistance: 0.35Ω
Power dissipation: 890W
товару немає в наявності
В кошику  од. на суму  грн.
PLA172P pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
PLA172P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
товару немає в наявності
В кошику  од. на суму  грн.
PLA172PTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC6FA0C7&compId=PLA172P.pdf?ci_sign=0dbbf0b9b59386dee07fd42b26cc2ab02a1703a1
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.800VAC
Mounting: SMT
Operating temperature: -40...105°C
Kind of output: MOSFET
Contacts configuration: SPST-NO
Max. operating current: 0.1A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 800V AC; max. 800V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
On-state resistance: 50Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.59mm
Insulation voltage: 5kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFR40N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d
IXFR40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Gate charge: 230nC
Kind of channel: enhancement
Drain-source voltage: 900V
Drain current: 21A
On-state resistance: 0.25Ω
товару немає в наявності
В кошику  од. на суму  грн.
MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA225RF1200TSF MIXA225RF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: boost chopper; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA425P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Max. off-state voltage: 2.2kV
Load current: 425A
Semiconductor structure: double series
Max. forward impulse current: 10kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA600P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Max. off-state voltage: 2.2kV
Load current: 600A
Semiconductor structure: double series
Max. forward impulse current: 15kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MDNA300P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Max. off-state voltage: 2.2kV
Load current: 300A
Semiconductor structure: double series
Max. forward impulse current: 8kA
Electrical mounting: Press-Fit
Mechanical mounting: screw
Type of semiconductor module: diode
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA300PF1200TSF MIXA300PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 325A
Pulsed collector current: 650A
Application: fans; for pump; for UPS; motors
Power dissipation: 1.5kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXG490PF1200TSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXA450PF1200TSF MIXA450PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 450A
Pulsed collector current: 900A
Application: fans; for pump; for UPS; motors
Power dissipation: 2.1kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
MIXG490PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: X2PT
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Case: SimBus F
товару немає в наявності
В кошику  од. на суму  грн.
IX9907NTR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907NTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: 1.7A
Integrated circuit features: linear dimming; PWM
Operating voltage: 650V DC
товару немає в наявності
В кошику  од. на суму  грн.
DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-3; 165W
Semiconductor structure: double series
Reverse recovery time: 30ns
Max. forward impulse current: 200A
Power dissipation: 165W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.5V
Load current: 30A
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1222.25 грн
3+1072.87 грн
10+1031.49 грн
В кошику  од. на суму  грн.
FUE30-12N1 pVersion=0046&contRep=ZT&docId=005056AB82531EE987F56DD7F90498BF&compId=FUE30-12N1.pdf?ci_sign=17999c248a3339e7beb8cafdfeb675816333a55a
FUE30-12N1
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 30A; Ifsm: 90A; THT
Max. forward impulse current: 90A
Electrical mounting: THT
Type of bridge rectifier: three-phase
Case: ISOPLUS i4-pac™ x024a
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.37V
Load current: 30A
товару немає в наявності
В кошику  од. на суму  грн.
IXGX100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGX100N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; PLUS247™
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 100A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 285ns
Turn-off time: 720ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 30 60 90 120 150 180 210 240 270 297 298 299 300 301 302