Продукція > IXYS > Всі товари виробника IXYS (18218) > Сторінка 302 з 304

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LF2190NTR LF2190NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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CPC1219Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; OptoMOS
Case: SIP4
On-state resistance: 16Ω
Mounting: THT
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
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MCD162-16io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP130N15X4 IXTP130N15X4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+460.53 грн
3+384.00 грн
4+306.25 грн
9+289.58 грн
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IXFH130N15X3 IXFH130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+705.74 грн
В кошику  од. на суму  грн.
IXDD630CI IXDD630CI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
1+615.18 грн
2+477.62 грн
6+451.43 грн
10+447.47 грн
25+433.98 грн
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MIXA101W1200EH IXYS MIXA101W1200EH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Technology: XPT™
Mechanical mounting: screw
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IXBH12N300 IXBH12N300 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S IXCP10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Mounting: THT
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO220AB
Type of integrated circuit: driver
на замовлення 508 шт:
термін постачання 21-30 дні (днів)
2+217.02 грн
7+149.95 грн
18+142.02 грн
50+136.46 грн
Мінімальне замовлення: 2
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IXCY10M90S IXCY10M90S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 900V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
2+370.81 грн
5+214.21 грн
12+203.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXCY10M45S IXCY10M45S IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51 Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
3+205.91 грн
8+129.32 грн
20+122.18 грн
70+117.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VHFD29-16IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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LCA712 LCA712 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Case: DIP6
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 350µs
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 0.5Ω
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
В кошику  од. на суму  грн.
MEK600-04DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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LCA125 LCA125 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
2+251.20 грн
5+186.44 грн
10+182.48 грн
14+176.13 грн
100+169.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MD16200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
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MDMA210P1600YD IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
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CPC1301GR CPC1301GR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
CTR@If: 1000-8000%@1mA
Insulation voltage: 5kV
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
3+154.65 грн
10+88.86 грн
12+78.54 грн
33+73.78 грн
50+71.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VUO82-16NO7 VUO82-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+2663.20 грн
5+2372.21 грн
В кошику  од. на суму  грн.
VUO82-12NO7 VUO82-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5 description Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2565.80 грн
2+2252.41 грн
5+2165.93 грн
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VUO82-08NO7 VUO82-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+2443.62 грн
2+2145.31 грн
В кошику  од. на суму  грн.
VUO82-14NO7 VUO82-14NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+2541.02 грн
В кошику  од. на суму  грн.
VUO82-18NO7 VUO82-18NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094 Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+2772.57 грн
В кошику  од. на суму  грн.
DSS10-01A DSS10-01A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
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DSS10-01AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
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DMA40U1800GU DMA40U1800GU IXYS media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
1+918.49 грн
2+588.69 грн
5+556.16 грн
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MCMA400PD1600PTSF IXYS Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
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CMA40E1600HR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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IXTF02N450 IXTF02N450 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Reverse recovery time: 1.6µs
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 78W
Drain-source voltage: 4.5kV
Type of transistor: N-MOSFET
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DSEP30-12B DSEP30-12B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFP90N20X3 IXFP90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
2+409.26 грн
3+368.92 грн
7+348.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP90N20X3M IXFP90N20X3M IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
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В кошику  од. на суму  грн.
IXTQ200N10T IXTQ200N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+638.25 грн
3+330.84 грн
В кошику  од. на суму  грн.
IXTK200N10P IXTK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+892.01 грн
2+799.73 грн
3+788.62 грн
4+756.09 грн
10+727.53 грн
В кошику  од. на суму  грн.
IXFN200N10P IXFN200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTA02N250HV IXTA02N250HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7A7820&compId=IXTA(T)02N250HV.pdf?ci_sign=248584949d99d8ddcf028d2963da8072c9e56a46 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+787.77 грн
2+572.03 грн
5+540.29 грн
50+519.67 грн
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IXTH02N250 IXTH02N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
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VUO86-16NO7 VUO86-16NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 432 шт:
термін постачання 21-30 дні (днів)
1+1006.50 грн
3+883.83 грн
25+847.33 грн
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IXFA130N15X3 IXFA130N15X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
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MMIX1T550N055T2
+1
 		MMIX1T550N055T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2782.82 грн
10+2488.05 грн
20+2484.87 грн
В кошику  од. на суму  грн.
LIA136 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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LIA135STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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В кошику  од. на суму  грн.
LIA136S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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В кошику  од. на суму  грн.
LIA136STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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IXFH6N120 IXFH6N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+806.56 грн
2+595.83 грн
5+563.30 грн
В кошику  од. на суму  грн.
IXFL32N120P IXFL32N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1784.01 грн
В кошику  од. на суму  грн.
IXFT16N120P IXFT16N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
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GBO25-12NO1 GBO25-12NO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C850CB0B068B8BF&compId=GBO25-12NO1.pdf?ci_sign=6e99f6686e059ec6a191f6bfefb6640334f22287 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+893.71 грн
2+635.50 грн
5+600.59 грн
16+577.58 грн
В кошику  од. на суму  грн.
VBO25-12NO2 VBO25-12NO2 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1490.95 грн
2+1309.08 грн
В кошику  од. на суму  грн.
DSP25-12AT-TUB DSP25-12AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
1+579.29 грн
3+385.58 грн
7+364.96 грн
В кошику  од. на суму  грн.
IXTT10N100D2 IXTT10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT10N100D IXTT10N100D IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
товару немає в наявності
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IXTH10N100D2 IXTH10N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT110N10L2 IXTT110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTH110N10L2 IXTH110N10L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTQ110N10P IXTQ110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
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IXTT110N10P IXTT110N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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LF2190NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2BB37B19F40CE&compId=LF2190NTR.pdf?ci_sign=ffb9a783e484bf36f1f603b30141cdcfee16c247
LF2190NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -4.5÷4.5A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -4.5...4.5A
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CPC1219Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21480C7&compId=CPC1219.pdf?ci_sign=80d89313d1d82ad2251ad748763cf6a67e3770ed
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; 200mA; max.60VAC; max.60VDC; OptoMOS
Case: SIP4
On-state resistance: 16Ω
Mounting: THT
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Max. operating current: 200mA
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Kind of output: MOSFET
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
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MCD162-16io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP130N15X4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2892EBE01F77820&compId=IXTH(P)130N15X4.pdf?ci_sign=7bebcf155b0b8631aec3241bd97b7a01a507017d
IXTP130N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 400W; TO220AB; 93ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 8.5mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 93ns
Features of semiconductor devices: ultra junction x-class
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+460.53 грн
3+384.00 грн
4+306.25 грн
9+289.58 грн
В кошику  од. на суму  грн.
IXFH130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFH130N15X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO247-3; 80ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO247-3
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 80ns
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+705.74 грн
В кошику  од. на суму  грн.
IXDD630CI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDD630CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -30...30A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 12.5...35V
Kind of output: non-inverting
Turn-on time: 135ns
Turn-off time: 135ns
на замовлення 217 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+615.18 грн
2+477.62 грн
6+451.43 грн
10+447.47 грн
25+433.98 грн
В кошику  од. на суму  грн.
MIXA101W1200EH MIXA101W1200EH.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; MOSFET three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: MOSFET three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Technology: XPT™
Mechanical mounting: screw
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IXBH12N300 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BF1CDC51AD698BF&compId=IXBH12N300_IXBT12N300.pdf?ci_sign=3b269cdf731a85c5368096fbeac6275dcc1a9602
IXBH12N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Technology: BiMOSFET™; FRED
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
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IXCP10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCP10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Mounting: THT
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO220AB
Type of integrated circuit: driver
на замовлення 508 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+217.02 грн
7+149.95 грн
18+142.02 грн
50+136.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXCY10M90S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M90S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 900V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+370.81 грн
5+214.21 грн
12+203.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXCY10M45S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89FBE8E4EFB3BC143&compId=IXCP10M90S.pdf?ci_sign=332b040ffb2e08e668dd747f637c240f3ba7dc51
IXCY10M45S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Mounting: SMD
Operating temperature: -55...150°C
Operating current: 2...100mA
Operating voltage: 450V DC
Power dissipation: 40W
Kind of integrated circuit: current regulator
Case: TO252
Type of integrated circuit: driver
на замовлення 116 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+205.91 грн
8+129.32 грн
20+122.18 грн
70+117.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VHFD29-16IO1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6E8CA7BF5A0C4&compId=VHFD29.pdf?ci_sign=01766e83765aadf1cad71084fd59fae767120e79
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 32A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 32A
Max. forward impulse current: 0.44kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Leads dimensions: 2x0.5mm
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LCA712 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C269000C7&compId=LCA712.pdf?ci_sign=884b90e7d5ff2ff132dd7a2dd6470ab1872c2430
LCA712
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Case: DIP6
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 350µs
Turn-on time: 2.5ms
Body dimensions: 8.38x6.35x3.3mm
On-state resistance: 0.5Ω
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
В кошику  од. на суму  грн.
MEK600-04DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 400V; If: 600A; Y4-M6; Ufmax: 1.2V
Semiconductor structure: common cathode
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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LCA125 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49461977780C7&compId=LCA125.pdf?ci_sign=a2c69f3ec3a56e411e3743bb2a36524d58d4efbe
LCA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Mounting: THT
Manufacturer series: OptoMOS
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Relay variant: 1-phase; current source
Turn-off time: 5ms
Control current max.: 50mA
Turn-on time: 5ms
Max. operating current: 0.17A
On-state resistance: 16Ω
Switched voltage: max. 300V AC; max. 300V DC
Insulation voltage: 3.75kV
Case: DIP6
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+251.20 грн
5+186.44 грн
10+182.48 грн
14+176.13 грн
100+169.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MD16200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 310A
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MDMA210P1600YD pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83687231AA00C4&compId=MDMA210P1600YD.pdf?ci_sign=b427c411ce21d44949c533e9b3d1060607206045 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
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CPC1301GR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AA40ABF36E1EC&compId=CPC1301GR.pdf?ci_sign=ed675bf8da0b0821cc0c340c5fd3ba4d77d3e4e0
CPC1301GR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 5kV; SO4
Case: SO4
Kind of output: Darlington
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
CTR@If: 1000-8000%@1mA
Insulation voltage: 5kV
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+154.65 грн
10+88.86 грн
12+78.54 грн
33+73.78 грн
50+71.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VUO82-16NO7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB4CC30B9692143&compId=VUO82-16NO7.pdf?ci_sign=45519a3bdfe60d1d3019f70dbc92c5cf93174716
VUO82-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 0.78V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2663.20 грн
5+2372.21 грн
В кошику  од. на суму  грн.
VUO82-12NO7 description pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8880186BEAA2C0C4&compId=VUO82-12NO7.pdf?ci_sign=58fb59bf82812a1945f3a1b3d25cceaa134485d5
VUO82-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2565.80 грн
2+2252.41 грн
5+2165.93 грн
В кошику  од. на суму  грн.
VUO82-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888014EAF25800C4&compId=VUO82-08NO7.pdf?ci_sign=07024e22d6cfbad8bf19881cb6785be310767c03
VUO82-08NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2443.62 грн
2+2145.31 грн
В кошику  од. на суму  грн.
VUO82-14NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA88801E380A29C0C4&compId=VUO82-14NO7.pdf?ci_sign=b8d3c7985f315fe50bc8fb4f10836f8044a49eeb
VUO82-14NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.4kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.4kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2541.02 грн
В кошику  од. на суму  грн.
VUO82-18NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA888023452F31C0C4&compId=VUO82-18NO7.pdf?ci_sign=73b63ee97f3e1ec78f8ec7ed5409494ee7bf5094
VUO82-18NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 750A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.8kV
Load current: 90A
Max. forward impulse current: 750A
Electrical mounting: screw
Version: module
Max. forward voltage: 1.08V
Leads: M5 screws
Case: PWS-D
Mechanical mounting: screw
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2772.57 грн
В кошику  од. на суму  грн.
DSS10-01A pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840
DSS10-01A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.66V
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: TO220AC
товару немає в наявності
В кошику  од. на суму  грн.
DSS10-01AS-TUB pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAA62F361878BF&compId=DSS10-01A.pdf?ci_sign=65485104f16a42ee68a438f8eb912f7c50024840
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Kind of package: tube
Max. forward voltage: 0.66V
Load current: 10A
Max. load current: 35A
Power dissipation: 90W
Max. off-state voltage: 100V
Max. forward impulse current: 120A
Case: D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
DMA40U1800GU media?resourcetype=datasheets&itemid=f71e2749-7cb7-4a6d-a573-5ff9e7c0a117&filename=littelfuse%2520power%2520semiconductors%2520dma40u1800gu%2520datasheet.pdf
DMA40U1800GU
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 40A; Ifsm: 370A
Leads: flat pin
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 0.74V
Load current: 40A
Max. forward impulse current: 370A
Max. off-state voltage: 1.8kV
Case: GUFP
Version: flat
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+918.49 грн
2+588.69 грн
5+556.16 грн
В кошику  од. на суму  грн.
MCMA400PD1600PTSF
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
товару немає в наявності
В кошику  од. на суму  грн.
CMA40E1600HR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB55D25969240C4&compId=CMA40E1600HR.pdf?ci_sign=6f80664eaf21c47f718bd7fb65bbdc0aa472624d
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
товару немає в наявності
В кошику  од. на суму  грн.
IXTF02N450 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B9172B820&compId=IXTF02N450.pdf?ci_sign=892f85121908800af19c6a6b8b7ea87700a30990
IXTF02N450
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 78W; 1.6us
Mounting: THT
Features of semiconductor devices: standard power mosfet
Case: ISOPLUS i4-pac™ x024c
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Reverse recovery time: 1.6µs
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 78W
Drain-source voltage: 4.5kV
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
DSEP30-12B pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8E9FA31CD45960C4&compId=DSEP30-12B.pdf?ci_sign=d28e281735b3bfc38bce88f4534d9d13f2a00f49
DSEP30-12B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Case: TO247-2
Type of diode: rectifying
Semiconductor structure: single diode
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 3.75V
Load current: 30A
Power dissipation: 165W
Max. forward impulse current: 200A
Max. off-state voltage: 1.2kV
Features of semiconductor devices: fast switching
Mounting: THT
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 320A; Y1; Ufmax: 1.32V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y1
Max. forward voltage: 1.32V
Gate current: 150/220mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXFP90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+409.26 грн
3+368.92 грн
7+348.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP90N20X3M pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB86D09048D8BF&compId=IXFP90N20X3M.pdf?ci_sign=5c1a1f901f779a0080c26dc7c292a30e32ce49f4 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFP90N20X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ200N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8557B5AE1820&compId=IXTH(Q)200N10T.pdf?ci_sign=fabd2ae31ac34d7d3d3b92bb0d92dc142a6b5f45
IXTQ200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO3P; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO3P
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 76ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+638.25 грн
3+330.84 грн
В кошику  од. на суму  грн.
IXTK200N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF918B7B48D05E27&compId=IXTK200N10P-DTE.pdf?ci_sign=0721e0c52bca576f300d138b8a4cdb5a5b21794d
IXTK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 200A; 800W; TO264
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+892.01 грн
2+799.73 грн
3+788.62 грн
4+756.09 грн
10+727.53 грн
В кошику  од. на суму  грн.
IXFN200N10P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C502DE4C338BF&compId=IXFN200N10P.pdf?ci_sign=8686db8775848651270ac3567ddd22e15cce1c0c
IXFN200N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 7.5mΩ
Gate charge: 235nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 150ns
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTA02N250HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC7A7820&compId=IXTA(T)02N250HV.pdf?ci_sign=248584949d99d8ddcf028d2963da8072c9e56a46
IXTA02N250HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Case: TO263
Kind of package: tube
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+787.77 грн
2+572.03 грн
5+540.29 грн
50+519.67 грн
В кошику  од. на суму  грн.
IXTH02N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A2867423E5F83820&compId=IXTH02N250.pdf?ci_sign=68c70dfdb0b741c1b5ffaf31320ce91e890c7f9c
IXTH02N250
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Features of semiconductor devices: standard power mosfet
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 1.5µs
Drain current: 0.2A
Power dissipation: 83W
On-state resistance: 450Ω
Drain-source voltage: 2.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
VUO86-16NO7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7C6A4B9FAE469&compId=VUO86-16NO7.pdf?ci_sign=a88f7f008cedc2c13da3d6b2ce3fe715a9f7945d
VUO86-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
на замовлення 432 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1006.50 грн
3+883.83 грн
25+847.33 грн
В кошику  од. на суму  грн.
IXFA130N15X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7C22BFC8958BF&compId=IXF_130N15X3.pdf?ci_sign=ad746508387e68354eb422c9054cf3e95160f569
IXFA130N15X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 150V; 130A; 390W; TO263
Kind of channel: enhancement
Mounting: SMD
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 80nC
Reverse recovery time: 80ns
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 390W
Case: TO263
товару немає в наявності
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MMIX1T550N055T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t550n055t2_datasheet.pdf.pdf
MMIX1T550N055T2
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 55V; 550A; Idm: 2kA; 830W
Type of transistor: N-MOSFET
Technology: GigaMOS™; TrenchT2™
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 550A
Pulsed drain current: 2kA
Power dissipation: 830W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 595nC
Kind of channel: enhancement
Reverse recovery time: 100ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2782.82 грн
10+2488.05 грн
20+2484.87 грн
В кошику  од. на суму  грн.
LIA136 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LIA135 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LIA135S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LIA135STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LIA136S pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
LIA136STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA94E310B13D2EE0C4&compId=LIA135.pdf?ci_sign=3a15eb84aee39a5c831ea1d4c145c1f65f1de1fa
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFH6N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957227820&compId=IXFH6N120.pdf?ci_sign=8972d5a18a8270d253e814360323d28139e6664d
IXFH6N120
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+806.56 грн
2+595.83 грн
5+563.30 грн
В кошику  од. на суму  грн.
IXFL32N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94881C72F820&compId=IXFL32N120P.pdf?ci_sign=d80523daf804ad9e5f99e697e80218a7346589fd
IXFL32N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 24A; 520W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 24A
Power dissipation: 520W
Case: ISOPLUS i5-pac™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1784.01 грн
В кошику  од. на суму  грн.
IXFT16N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D34FC31C383820&compId=IXFH(T)16N120P.pdf?ci_sign=62d379b539b652daa07e99793c202834e0bb54aa
IXFT16N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Mounting: SMD
Case: TO268
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 0.95Ω
Drain current: 16A
Power dissipation: 660W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
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GBO25-12NO1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C850CB0B068B8BF&compId=GBO25-12NO1.pdf?ci_sign=6e99f6686e059ec6a191f6bfefb6640334f22287
GBO25-12NO1
Виробник: IXYS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 25A; Ifsm: 370A
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 25A
Max. forward impulse current: 370A
Max. off-state voltage: 1.2kV
Case: GBFP
Kind of package: tube
Leads: flat pin
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+893.71 грн
2+635.50 грн
5+600.59 грн
16+577.58 грн
В кошику  од. на суму  грн.
VBO25-12NO2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B14FB4DB5AE0C7&compId=VBO25_ser.pdf?ci_sign=901c93b9e710bb3b35cf523526fb1ef18c73cc62
VBO25-12NO2
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 38A; Ifsm: 370A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 38A
Max. forward impulse current: 370A
Version: square
Case: FO-A
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1490.95 грн
2+1309.08 грн
В кошику  од. на суму  грн.
DSP25-12AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC49AB384BDC0C4&compId=DSP25-12AT.pdf?ci_sign=0302a724ac37173f94b33d568f44736a7744ea9e
DSP25-12AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. forward voltage: 1.16V
Power dissipation: 160W
Load current: 25A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Semiconductor structure: double series
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+579.29 грн
3+385.58 грн
7+364.96 грн
В кошику  од. на суму  грн.
IXTT10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTT10N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO268; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO268
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT10N100D pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F1487820&compId=IXTH(T)10N100D.pdf?ci_sign=3be67cb3e02e1fcc22bdf1490b0df9caffc7fd50
IXTT10N100D
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; Idm: 20A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Pulsed drain current: 20A
Power dissipation: 400W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 850ns
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IXTH10N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A3125E13B47820&compId=IXTH(T)10N100D2.pdf?ci_sign=fea7a32eed96d4aca8c20c0d37bcc4194c5ed7a0
IXTH10N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 695W; TO247-3; 70ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 10A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 70ns
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IXTT110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTT110N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO268; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO268
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTH110N10L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3A32F17C5AFB820&compId=IXTH(T)110N10L2.pdf?ci_sign=77ea8838b7a67aed409c2ff62bff94f2ca25fbfe
IXTH110N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 230ns
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IXTQ110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTQ110N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
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IXTT110N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9100B78535BE27&compId=IXTQ110N10P-DTE.pdf?ci_sign=e6f683e1c5ed1f470d8dbb0f27a53c45ede76033
IXTT110N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 110A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 480W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 130ns
товару немає в наявності
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