Продукція > IXYS > Всі товари виробника IXYS (18208) > Сторінка 300 з 304

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IXTP270N04T4 IXTP270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
2+258.26 грн
3+216.07 грн
6+180.46 грн
15+170.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA170N075T2 IXTA170N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
2+250.59 грн
3+208.95 грн
6+166.21 грн
16+157.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP170N075T2 IXTP170N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+294.91 грн
6+175.71 грн
15+165.42 грн
50+159.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP70N075T2 IXTP70N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
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IXTA70N075T2 IXTA70N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
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IXTA270N04T4 IXTA270N04T4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
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IXTA270N04T4-7 IXTA270N04T4-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
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CLA80E1200HF CLA80E1200HF IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
1+646.08 грн
2+475.67 грн
6+449.56 грн
10+432.14 грн
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VBO21-12NO7 VBO21-12NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208 Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
1+913.72 грн
2+744.77 грн
4+704.41 грн
10+677.50 грн
В кошику  од. на суму  грн.
VBO21-08NO7 VBO21-08NO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA4174B65C0C4&compId=VBO21-08NO7.pdf?ci_sign=7df11d659109a08237d18622c305a9c1418da0ec Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
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IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFK200N10P IXFK200N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8B1AA6C45820&compId=IXFK(X)200N10P.pdf?ci_sign=9da439a6d66c4e98324b0d3df947cbc3c4d4b05f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
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IXTY02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Polarisation: unipolar
Reverse recovery time: 1µs
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 500V
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
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IXFH90N20X3 IXFH90N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Technology: HiPerFET™; X3-Class
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
1+447.49 грн
В кошику  од. на суму  грн.
IXTP48N20T IXTP48N20T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D511305565B820&compId=IXTA(P%2CQ)48N20T.pdf?ci_sign=96c4cd9fa46a40159c3190f1520d7e4bacc391d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Reverse recovery time: 130ns
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
2+290.65 грн
3+250.90 грн
6+170.17 грн
15+161.46 грн
100+155.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGT16N170A IXGT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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IXGT16N170 IXGT16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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IXGT16N170AH1 IXGT16N170AH1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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DSEP30-06A DSEP30-06A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE99375004143&compId=DSEP30-06A.pdf?ci_sign=c8282cd2e443bb79a372024573e7f8566338ba13 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
2+382.71 грн
4+242.19 грн
11+228.74 грн
Мінімальне замовлення: 2
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MDI550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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MID550-12A4 IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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IXYX100N65B3D1 IXYX100N65B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 65ns
Gate charge: 168nC
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 830W
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXYX50N170C IXYX50N170C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Kind of package: tube
Case: PLUS247™
Technology: XPT™
Type of transistor: IGBT
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 1.5kW
Pulsed collector current: 460A
Collector-emitter voltage: 1.7kV
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IXYN100N65A3 IXYN100N65A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
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IXYN100N120C3 IXYN100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
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IXFX250N10P IXFX250N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
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IXBOD1-36R IXBOD1-36R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+6931.33 грн
20+6330.97 грн
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IXBOD1-38R IXBOD1-38R IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4 Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+6914.29 грн
В кошику  од. на суму  грн.
IXGH50N90B2 IXGH50N90B2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488 Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
1+545.51 грн
3+398.11 грн
7+376.74 грн
30+362.49 грн
В кошику  од. на суму  грн.
IXGH50N90B2D1 IXGH50N90B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
1+948.67 грн
2+535.83 грн
3+535.03 грн
5+506.54 грн
В кошику  од. на суму  грн.
IXGH48N60A3 IXGH48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH2N250 IXGH2N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
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IXGH30N120B3D1 IXGH30N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
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IXGH32N120A3 IXGH32N120A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACC2AE51233820&compId=IXGH(t)32N120A3.pdf?ci_sign=146fd5db7b9b749a16964dac4288ffe02f291c06 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
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IXGH120N30B3 IXGH120N30B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
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IXGH25N250 IXGH25N250 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
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IXGH50N120C3 IXGH50N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
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В кошику  од. на суму  грн.
IXGH120N30C3 IXGH120N30C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
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IXGH25N160 IXGH25N160 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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В кошику  од. на суму  грн.
IXGH28N60B3D1 IXGH28N60B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2 Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
товару немає в наявності
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IXGH30N120C3H1 IXGH30N120C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
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IXGH48N60A3D1 IXGH48N60A3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH60N60C3 IXGH60N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA41F4BD5B5820&compId=IXGH60N60C3.pdf?ci_sign=7f9cf4d3e178e853c7219787575b52af9600ca35 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
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CPC1786J CPC1786J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1680C7&compId=CPC1786.pdf?ci_sign=edf7b5af3d387d0c9c1e5db95ba40db3dea171e3 Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Relay variant: current source
Case: i4-pac
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
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DMA90U1800LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Electrical mounting: SMT
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Max. off-state voltage: 1.8kV
Case: SMPD
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IXTP18P10T IXTP18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
2+234.40 грн
10+98.93 грн
26+93.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA IXA70I1200NA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Collector current: 65A
Power dissipation: 350W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: high voltage
Semiconductor structure: single transistor
Technology: XPT™
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+2532.34 грн
2+2224.03 грн
3+2223.24 грн
10+2188.42 грн
В кошику  од. на суму  грн.
DSEP6-06AS DSEP6-06AS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5BE4C1F7A18BF&compId=DSEP6-06AS.pdf?ci_sign=85882eaa9700f0710dfe9d0880c1bc7d8d041406 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 20ns; DPAK; Ufmax: 1.34V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 20ns
Max. forward voltage: 1.34V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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DSEP6-06BS-TRL IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4ADE89547C0C4&compId=DSEP6-06BS.pdf?ci_sign=968149a93bfb97759a7c211ab3bb3ace53f31304 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 15ns; DPAK; Ufmax: 1.77V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 1.77V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
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IXTP230N075T2 IXTP230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
1+434.70 грн
4+303.13 грн
9+286.51 грн
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IXFA230N075T2 IXFA230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+279.57 грн
3+233.48 грн
6+181.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH230N075T2 IXFH230N075T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+687.85 грн
3+397.32 грн
7+375.95 грн
120+368.83 грн
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IXFA230N075T2-7 IXFA230N075T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+501.18 грн
4+282.56 грн
10+266.73 грн
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LF21844NTR LF21844NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F288800030C0CE&compId=LF21844NTR.pdf?ci_sign=61a040bf0c211a11be4c57b5f6b310fc08b63c69 Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
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LF2184NTR LF2184NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2912A55E160CE&compId=LF2184NTR.pdf?ci_sign=ff0473e9710ba1c71df8b5e1d2bcc3920690c9ea Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
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MCMA265PD1600KB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Case: Y1-CU
Semiconductor structure: double series
Electrical mounting: screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.15V
Load current: 268A
Max. load current: 421A
Max. forward impulse current: 8.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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MCMA25PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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MCMA85PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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MCMA110PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
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IXFK100N65X2 IXFK100N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+1054.36 грн
3+926.02 грн
В кошику  од. на суму  грн.
IXTP270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCA7081FBA9820&compId=IXTH(P)270N04T4.pdf?ci_sign=33513c4c5bdc13e31fc846194602bf96a0b96b81
IXTP270N04T4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
на замовлення 59 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+258.26 грн
3+216.07 грн
6+180.46 грн
15+170.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA170N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe
IXTA170N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO263; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO263
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+250.59 грн
3+208.95 грн
6+166.21 грн
16+157.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP170N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAC1FD1859D820&compId=IXTA(P)170N075T2.pdf?ci_sign=e01017447e298f17bee545516edbc47dab257dbe
IXTP170N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 360W; TO220AB; 63ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 5.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 109nC
Reverse recovery time: 63ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+294.91 грн
6+175.71 грн
15+165.42 грн
50+159.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP70N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2
IXTP70N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO220AB; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO220AB
On-state resistance: 12mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
товару немає в наявності
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IXTA70N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4403F7996D820&compId=IXTA(P)70N075T2.pdf?ci_sign=0656d3eaf9da3cd72c5ad6e6291c34f2e42cafa2
IXTA70N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; 150W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Power dissipation: 150W
Case: TO263
On-state resistance: 12mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 46nC
Reverse recovery time: 48ns
товару немає в наявності
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IXTA270N04T4 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12
IXTA270N04T4
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
товару немає в наявності
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IXTA270N04T4-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAACCCA46F820&compId=IXTA270N04T4.pdf?ci_sign=5943278f7f5382b890ecedd75c0f652bcb39ba12
IXTA270N04T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
товару немає в наявності
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CLA80E1200HF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8A0F0061E2F7B6143&compId=CLA80E1200HF.pdf?ci_sign=92b34dd44e4b0b4d546dbee16db25f9f13c9c6cf
CLA80E1200HF
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 126A; 80A; Igt: 38mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 126A
Load current: 80A
Gate current: 38mA
Case: PLUS247™
Mounting: THT
Kind of package: tube
Max. forward impulse current: 765A
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+646.08 грн
2+475.67 грн
6+449.56 грн
10+432.14 грн
В кошику  од. на суму  грн.
VBO21-12NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA8DA268BC0C4&compId=VBO21-12NO7.pdf?ci_sign=516f358b6bb5485f53c65238575a620f94c8c208
VBO21-12NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+913.72 грн
2+744.77 грн
4+704.41 грн
10+677.50 грн
В кошику  од. на суму  грн.
VBO21-08NO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA86FEA4174B65C0C4&compId=VBO21-08NO7.pdf?ci_sign=7df11d659109a08237d18622c305a9c1418da0ec
VBO21-08NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 20A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 20A
Max. forward impulse current: 120A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
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IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
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IXFK200N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD8B1AA6C45820&compId=IXFK(X)200N10P.pdf?ci_sign=9da439a6d66c4e98324b0d3df947cbc3c4d4b05f
IXFK200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 235nC
On-state resistance: 7.5mΩ
Drain current: 200A
Drain-source voltage: 100V
Power dissipation: 830W
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IXTY02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 200mA; Idm: 800mA; 25W; TO252
Polarisation: unipolar
Reverse recovery time: 1µs
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 25W
On-state resistance: 30Ω
Gate-source voltage: ±20V
Drain-source voltage: 500V
Kind of channel: depletion
Mounting: SMD
Type of transistor: N-MOSFET
Case: TO252
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IXFH90N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB8178012838BF&compId=IXF_90N20X3.pdf?ci_sign=cd4eb69bd34dd603e68d972f3c7cec2471da9466 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH90N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 12.8mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 85ns
Technology: HiPerFET™; X3-Class
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+447.49 грн
В кошику  од. на суму  грн.
IXTP48N20T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D511305565B820&compId=IXTA(P%2CQ)48N20T.pdf?ci_sign=96c4cd9fa46a40159c3190f1520d7e4bacc391d6
IXTP48N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 60nC
Reverse recovery time: 130ns
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+290.65 грн
3+250.90 грн
6+170.17 грн
15+161.46 грн
100+155.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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IXGT16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGT16N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 78nC
Turn-on time: 90ns
Turn-off time: 1.6µs
Collector current: 16A
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
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IXGT16N170AH1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGT16N170AH1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO268
Technology: NPT
Mounting: SMD
Gate charge: 70nC
Turn-on time: 35ns
Turn-off time: 298ns
Collector current: 11A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 190W
Collector-emitter voltage: 1.7kV
товару немає в наявності
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DSEP30-06A pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BFEEE99375004143&compId=DSEP30-06A.pdf?ci_sign=c8282cd2e443bb79a372024573e7f8566338ba13
DSEP30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 250A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-2
Max. forward voltage: 1.25V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
на замовлення 118 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+382.71 грн
4+242.19 грн
11+228.74 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MDI550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: buck chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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MID550-12A4
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; NPT
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: Y3-DCB
Topology: boost chopper
Type of semiconductor module: IGBT
Electrical mounting: FASTON connectors; screw
Technology: NPT
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 460A
Power dissipation: 2.75kW
Pulsed collector current: 800A
Application: motors
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IXYX100N65B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA0A653400D820&compId=IXYK(X)100N65B3D1.pdf?ci_sign=29e34974f09b886b51d47c049d0e1b1e87e61953
IXYX100N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; PLUS247™
Mounting: THT
Kind of package: tube
Case: PLUS247™
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 65ns
Gate charge: 168nC
Turn-off time: 358ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 830W
Pulsed collector current: 460A
Collector-emitter voltage: 650V
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IXYX50N170C pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFAFE24D2B1820&compId=IXYX50N170C.pdf?ci_sign=de7b52736671be5add389053da061b99ba78f92b
IXYX50N170C
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Mounting: THT
Features of semiconductor devices: high voltage
Kind of package: tube
Case: PLUS247™
Technology: XPT™
Type of transistor: IGBT
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 1.5kW
Pulsed collector current: 460A
Collector-emitter voltage: 1.7kV
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IXYN100N65A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F33397FE939820&compId=IXYN100N65A3.pdf?ci_sign=3d698a620938f9cbdfed9167de4b750ccfecfb9b
IXYN100N65A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 100A; SOT227B
Max. off-state voltage: 650V
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 600W
Pulsed collector current: 460A
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IXYN100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F32D2A06CC7820&compId=IXYN100N120C3.pdf?ci_sign=a8e6af9285efcccbc7657d6ea988b565cc631405
IXYN100N120C3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Case: SOT227B
Type of semiconductor module: IGBT
Electrical mounting: screw
Technology: GenX3™; XPT™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 84A
Power dissipation: 830W
Pulsed collector current: 460A
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IXFX250N10P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB36DB3D55820&compId=IXFK(X)250N10P.pdf?ci_sign=8ea7e81bf2d9e3c41b4632496dce0444a2a01043
IXFX250N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 250A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 6.5mΩ
Mounting: THT
Gate charge: 205nC
Kind of package: tube
Kind of channel: enhancement
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IXBOD1-36R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-36R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.6kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.6kV
Kind of package: bulk
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6931.33 грн
20+6330.97 грн
В кошику  од. на суму  грн.
IXBOD1-38R pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9ED8D961200940CE&compId=IXBOD1_v2.pdf?ci_sign=003f6685fd1d26f92c97ad563d51a9b6294d70a4
IXBOD1-38R
Виробник: IXYS
Category: Thyristors - others
Description: Thyristor: BOD x4; 0.7A; BOD; THT; bulk; 3.8kV
Type of thyristor: BOD x4
Mounting: THT
Max. load current: 0.7A
Case: BOD
Breakover voltage: 3.8kV
Kind of package: bulk
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6914.29 грн
В кошику  од. на суму  грн.
IXGH50N90B2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAABAECC3241820&compId=IXGH(T)50N90B2.pdf?ci_sign=069ecfae63b9b0cb00f5b2086e78ae27d0bcd488
IXGH50N90B2
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 132 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+545.51 грн
3+398.11 грн
7+376.74 грн
30+362.49 грн
В кошику  од. на суму  грн.
IXGH50N90B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A96FD8C4E898BF&compId=IXG_50N90B2D1.pdf?ci_sign=f4cd4c51dbcce9e2ffad27c4bb510a6a965450cf
IXGH50N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 267 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+948.67 грн
2+535.83 грн
3+535.03 грн
5+506.54 грн
В кошику  од. на суму  грн.
IXGH48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGH48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH2N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAFE9F6304CF820&compId=IXGH2N250.pdf?ci_sign=139bab15db439c626267cbd44ebcd44f0138782d
IXGH2N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 2A; 32W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 2A
Power dissipation: 32W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 13.5A
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Turn-on time: 115ns
Turn-off time: 278ns
Features of semiconductor devices: high voltage
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IXGH30N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA06EEB189820&compId=IXGH(t)30N120B3D1.pdf?ci_sign=f005ac054c26db1cc4211835ea92d6b297ff6ef3
IXGH30N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 30A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 471ns
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IXGH32N120A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACC2AE51233820&compId=IXGH(t)32N120A3.pdf?ci_sign=146fd5db7b9b749a16964dac4288ffe02f291c06
IXGH32N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 32A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 32A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Turn-on time: 239ns
Turn-off time: 1.38µs
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IXGH120N30B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE9057987A0B820&compId=IXGH120N30B3.pdf?ci_sign=5d584af9080f9df46127c6c1317b6168218acf27
IXGH120N30B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 356ns
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IXGH25N250 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DB00DD7512F1820&compId=IXGH25N250.pdf?ci_sign=37672af961a987aa06f6a3c92f025fec780b03e0
IXGH25N250
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 2.5kV; 25A; 250W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 2.5kV
Collector current: 25A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Turn-on time: 301ns
Turn-off time: 409ns
Features of semiconductor devices: high voltage
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IXGH50N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD246A67187820&compId=IXGH50N120C3.pdf?ci_sign=38e9870a4fb4296be0a0bbda74474af0275c3fb6
IXGH50N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 460W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 460W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 485ns
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IXGH120N30C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE90C387DF7F820&compId=IXGH120N30C3.pdf?ci_sign=65f99932f05996cb78f8e73991c500d0b7beb82f
IXGH120N30C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 120A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 300V
Collector current: 120A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Turn-on time: 66ns
Turn-off time: 233ns
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IXGH25N160 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE2D104B897820&compId=IXGH(T)25N160.pdf?ci_sign=cb53774ff2fd2307076286b94f4d40db8e75e75f
IXGH25N160
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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IXGH28N60B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA0D5F6D5F1820&compId=IXGH28N60B3D1.pdf?ci_sign=6f6b95dccb0524e7c091ba3fc038cb10729717c2
IXGH28N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PolarHV™; 600V; 28A; 190W; TO247-3
Type of transistor: IGBT
Technology: PolarHV™; PT
Collector-emitter voltage: 600V
Collector current: 28A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 350ns
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IXGH30N120C3H1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACA4B1CC0B7820&compId=IXGH30N120C3H1.pdf?ci_sign=694f2b1a47c19f56311ca2c2939981f504873c81
IXGH30N120C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 24A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 24A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 415ns
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IXGH48N60A3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BF9565086117820&compId=IXGH48N60A3D1.pdf?ci_sign=79ff2f016eec2a4ab098ef5c133c0a1a4d151380
IXGH48N60A3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
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IXGH60N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA41F4BD5B5820&compId=IXGH60N60C3.pdf?ci_sign=7f9cf4d3e178e853c7219787575b52af9600ca35
IXGH60N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 380W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 198ns
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CPC1786J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1680C7&compId=CPC1786.pdf?ci_sign=edf7b5af3d387d0c9c1e5db95ba40db3dea171e3
CPC1786J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 800mA; max.1kVDC; THT; i4-pac; OptoMOS; 2Ω
Relay variant: current source
Case: i4-pac
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Mounting: THT
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
Max. operating current: 0.8A
On-state resistance: 2Ω
Switched voltage: max. 1kV DC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
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DMA90U1800LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDA87FF96875C80C0C4&compId=DMA90U1800LB.pdf?ci_sign=bcc21b297e8d57d587ae333632f36e7a41cdf83b
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.8kV; If: 90A; Ifsm: 350A
Type of bridge rectifier: three-phase
Electrical mounting: SMT
Max. forward voltage: 1.26V
Load current: 90A
Max. forward impulse current: 350A
Max. off-state voltage: 1.8kV
Case: SMPD
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IXTP18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTP18P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO220AB
Case: TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Gate charge: 39nC
Reverse recovery time: 62ns
On-state resistance: 0.12Ω
Gate-source voltage: ±15V
Power dissipation: 83W
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+234.40 грн
10+98.93 грн
26+93.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXA70I1200NA pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F2CDC3016C5820&compId=IXA70I1200NA.pdf?ci_sign=1464344c37dfa780e4641b18a4a9fec667ded4ae
IXA70I1200NA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B
Collector current: 65A
Power dissipation: 350W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Features of semiconductor devices: high voltage
Semiconductor structure: single transistor
Technology: XPT™
Type of semiconductor module: IGBT
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2532.34 грн
2+2224.03 грн
3+2223.24 грн
10+2188.42 грн
В кошику  од. на суму  грн.
DSEP6-06AS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD5BE4C1F7A18BF&compId=DSEP6-06AS.pdf?ci_sign=85882eaa9700f0710dfe9d0880c1bc7d8d041406
DSEP6-06AS
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 20ns; DPAK; Ufmax: 1.34V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 20ns
Max. forward voltage: 1.34V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
DSEP6-06BS-TRL pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4ADE89547C0C4&compId=DSEP6-06BS.pdf?ci_sign=968149a93bfb97759a7c211ab3bb3ace53f31304
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 6A; 15ns; DPAK; Ufmax: 1.77V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Case: DPAK
Kind of package: reel; tape
Reverse recovery time: 15ns
Max. forward voltage: 1.77V
Max. forward impulse current: 40A
Power dissipation: 55W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
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IXTP230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD06B56D7B7820&compId=IXTA(P)230N075T2.pdf?ci_sign=435f3b950c6a5ee63f1c4c17cf1a54b753421988
IXTP230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO220AB; 66ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 66ns
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+434.70 грн
4+303.13 грн
9+286.51 грн
В кошику  од. на суму  грн.
IXFA230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD0BBC1F507820&compId=IXFA(P)230N075T2.pdf?ci_sign=a193bb6c937ab8a381de2b728ab686af5cf3de01
IXFA230N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.57 грн
3+233.48 грн
6+181.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH230N075T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F1D820&compId=IXFH230N075T2.pdf?ci_sign=d8900541f87190d286851767bbbf7c7af6459ae7
IXFH230N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO247-3; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+687.85 грн
3+397.32 грн
7+375.95 грн
120+368.83 грн
В кошику  од. на суму  грн.
IXFA230N075T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9405C15EB820&compId=IXFA230N075T2-7.pdf?ci_sign=1b2d5f843fc07ea895f6f33fcdd57b9553e3c1a9
IXFA230N075T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 230A; 480W; TO263-7; 59ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 230A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 59ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+501.18 грн
4+282.56 грн
10+266.73 грн
В кошику  од. на суму  грн.
LF21844NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F288800030C0CE&compId=LF21844NTR.pdf?ci_sign=61a040bf0c211a11be4c57b5f6b310fc08b63c69
LF21844NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
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LF2184NTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91F2912A55E160CE&compId=LF2184NTR.pdf?ci_sign=ff0473e9710ba1c71df8b5e1d2bcc3920690c9ea
LF2184NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.3÷1.9A
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
В кошику  од. на суму  грн.
MCMA265PD1600KB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Case: Y1-CU
Semiconductor structure: double series
Electrical mounting: screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/220mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.15V
Load current: 268A
Max. load current: 421A
Max. forward impulse current: 8.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
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MCMA25PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80DD6A73ADE0C4&compId=MCMA25PD1600TB.pdf?ci_sign=736dc4ed2df1376efda2f070951405c5bea4b009 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 25A; TO240AA; Ufmax: 1.25V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 55/80mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.25V
Load current: 25A
Max. load current: 40A
Max. forward impulse current: 0.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
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MCMA85PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD811F443E64C0C4&compId=MCMA85PD1600TB.pdf?ci_sign=272e7fff698eb0479745f9579ed9728abdc529c3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 85A; TO240AA; Ufmax: 1.18V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 95/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.18V
Load current: 85A
Max. load current: 135A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
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MCMA110PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B04D5E18E0C4&compId=MCMA110PD1600TB.pdf?ci_sign=4b039647ab9d7138ff56499a2acddc4f604ee922 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 110A; TO240AA; Ufmax: 1.21V; bulk
Case: TO240AA
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.21V
Load current: 110A
Max. load current: 170A
Max. forward impulse current: 1.9kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode-thyristor
товару немає в наявності
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IXFK100N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389E5CCA0EF7820&compId=IXFK(X)100N65X2.pdf?ci_sign=943e818235cb436b72c8d4fa8bbbd2fba5457b4b
IXFK100N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; 1040W; TO264; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 183nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1054.36 грн
3+926.02 грн
В кошику  од. на суму  грн.
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