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IXFX32N100Q3 IXFX32N100Q3 IXYS IXF_32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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MEK75-12DA
+1
 		MEK75-12DA IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
1+1956.96 грн
2+1718.50 грн
3+1717.76 грн
36+1690.10 грн
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CPC1909J CPC1909J IXYS CPC1909.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
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IXYH8N250CHV IXYH8N250CHV IXYS IXY_8N250CHV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Kind of package: tube
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 70A
Turn-on time: 24ns
Turn-off time: 328ns
Type of transistor: IGBT
Power dissipation: 280W
Features of semiconductor devices: high voltage
Gate charge: 45nC
Technology: XPT™
Mounting: THT
Case: TO247HV
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+1409.56 грн
2+1237.86 грн
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IXTH2N150L IXTH2N150L IXYS IXTH2N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
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IXTK90N25L2 IXTK90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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MCC162-16io1 IXYS MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+4788.94 грн
6+4275.70 грн
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MCC162-16IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC162-18io1 IXYS MCC162-18IO1-dte.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+4918.55 грн
6+4421.46 грн
12+4391.56 грн
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MCC162-18IO1B IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFT180N20X3HV IXFT180N20X3HV IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1162.42 грн
2+865.60 грн
3+817.76 грн
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IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1288.00 грн
3+1130.97 грн
30+1115.27 грн
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IXFT150N20T IXFT150N20T IXYS IXFH(T)150N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT16N120P IXFT16N120P IXYS IXFH(T)16N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IXFT340N075T2 IXFT340N075T2 IXYS IXFH(T)340N075T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT60N50P3 IXFT60N50P3 IXYS IXF_60N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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IXFT69N30P IXFT69N30P IXYS IXFH(T)69N30P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
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IXFT70N20Q3 IXFT70N20Q3 IXYS IXFH(T)70N20Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 70A
Power dissipation: 690W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IXFT70N30Q3 IXFT70N30Q3 IXYS IXFH(T)70N30Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT96N20P IXFT96N20P IXYS IXFH(T,V)96N20P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFT100N30X3HV IXFT100N30X3HV IXYS IXF_100N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT150N17T2 IXFT150N17T2 IXYS IXFT150N17T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N25X3HV IXYS IXFH150N25X3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO268HV
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT18N100Q3 IXFT18N100Q3 IXYS IXFH(T)18N100Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
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IXFT20N80P IXFT20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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IXFT220N20X3HV IXFT220N20X3HV IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO268
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT26N60P IXFT26N60P IXYS IXFH26N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N85XHV IXFT30N85XHV IXYS IXFH30N85X_IXFT30N85XHV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 30A
Power dissipation: 695W
Case: TO268HV
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Features of semiconductor devices: ultra junction x-class
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IXFT36N50P IXFT36N50P IXYS IXFH(V,T)36N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFT36N60P IXFT36N60P IXYS IXFH(K,T)36N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXFT40N85XHV IXFT40N85XHV IXYS IXFT40N85X.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
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MCMA110P1600TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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CPC3703CTR CPC3703CTR IXYS CPC3703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 2002 шт:
термін постачання 21-30 дні (днів)
6+74.86 грн
10+55.02 грн
32+28.03 грн
86+26.46 грн
500+26.31 грн
1000+25.49 грн
Мінімальне замовлення: 6
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VUM33-06PH VUM33-06PH IXYS media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
Case: V1-B-Pack
Topology: boost chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Power dissipation: 500W
Gate-source voltage: ±20V
Mechanical mounting: screw
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DSEP2X31-12A DSEP2X31-12A IXYS media?resourcetype=datasheets&itemid=9c404301-9b52-434d-94d6-c96c0ef74990&filename=Littelfuse-Power-Semiconductors-DSEP2x31-12A-Datasheet description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.77V
Load current: 30A x2
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1927.98 грн
2+1693.09 грн
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DSEP2X31-03A DSEP2X31-03A IXYS media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet description Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 300V
Max. forward voltage: 0.9V
Load current: 30A x2
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1744.44 грн
В кошику  од. на суму  грн.
DSEP2X61-12A DSEP2X61-12A IXYS DSEP2x61-12A.pdf description Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.42V
Load current: 60A x2
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MIXG180W1200PTEH IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 195A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG180W1200TEH IXYS media?resourcetype=datasheets&amp;itemid=2926fee0-4fd4-467d-a793-c5df74bfe655&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg180w1200teh%2520datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 195A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
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VMO60-05F IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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VMO650-01F IXYS VMO650-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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VMO550-01F IXYS VMO550-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTQ69N30P IXTQ69N30P IXYS IXTQ69N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Case: TO3P
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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IXFK140N20P IXFK140N20P IXYS IXFK140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS IXTK140N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 180ns
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CPC1967J CPC1967J IXYS CPC1967.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Operating temperature: -40...85°C
On-state resistance: 0.85Ω
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 1350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Case: i4-pac
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
1+1125.39 грн
3+988.20 грн
В кошику  од. на суму  грн.
MEA250-12DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
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IXTH52P10P IXTH52P10P IXYS IXT_52P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Mounting: THT
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
1+529.69 грн
3+352.82 грн
7+333.38 грн
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IXTH32P20T IXTH32P20T IXYS IXT_32P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Case: TO247-3
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CPC1961G CPC1961G IXYS CPC1961.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP8
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
2+240.70 грн
9+107.64 грн
23+101.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CS20-25mo1F CS20-25mo1F IXYS CS20-25mo1F.pdf Category: SMD/THT thyristors
Description: Thyristor; 2.5kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Max. off-state voltage: 2.5kV
Load current: 18A
Gate current: 250mA
Max. forward impulse current: 200A
Kind of package: tube
Type of thyristor: thyristor
Case: ISOPLUS i4-pac™ x024c
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+981.30 грн
3+861.12 грн
10+859.62 грн
25+828.23 грн
В кошику  од. на суму  грн.
PLA150S PLA150S IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
2+303.48 грн
5+207.80 грн
12+198.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA140S PLA140S IXYS PLA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
1+405.72 грн
4+222.01 грн
11+211.54 грн
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PLA150 PLA150 IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
2+356.62 грн
5+207.06 грн
12+197.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA140L PAA140L IXYS PAA140L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
1+610.19 грн
3+373.00 грн
7+355.81 грн
В кошику  од. на суму  грн.
PAA191 PAA191 IXYS PAA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
1+849.28 грн
3+360.30 грн
7+343.85 грн
В кошику  од. на суму  грн.
CPC1966YX6 CPC1966YX6 IXYS CPC1966YX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: instantaneous switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: SIP4
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+512.78 грн
3+348.34 грн
7+329.65 грн
25+320.68 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943G IXYS CPC1943.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
на замовлення 133 шт:
термін постачання 21-30 дні (днів)
1+615.82 грн
3+321.42 грн
8+304.23 грн
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IXFX32N100Q3 IXF_32N100Q3.pdf
IXFX32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 1kV; 32A; 1250W; PLUS247™
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
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MEK75-12DA PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MEK75-12DA
+1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Type of module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 1.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.85V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 63 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1956.96 грн
2+1718.50 грн
3+1717.76 грн
36+1690.10 грн
В кошику  од. на суму  грн.
CPC1909J CPC1909.pdf
CPC1909J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 6500mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 100mA
Max. operating current: 6.5A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.1Ω
Mounting: THT
Case: ISOPLUS264™
Operating temperature: -40...85°C
Body dimensions: 19.91x26.16x5.03mm
Insulation voltage: 2.5kV
Turn-on time: 25ms
Turn-off time: 10ms
Kind of output: MOSFET
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IXYH8N250CHV IXY_8N250CHV.pdf
IXYH8N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 8A; 280W; TO247HV
Kind of package: tube
Collector-emitter voltage: 2.5kV
Gate-emitter voltage: ±20V
Collector current: 8A
Pulsed collector current: 70A
Turn-on time: 24ns
Turn-off time: 328ns
Type of transistor: IGBT
Power dissipation: 280W
Features of semiconductor devices: high voltage
Gate charge: 45nC
Technology: XPT™
Mounting: THT
Case: TO247HV
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1409.56 грн
2+1237.86 грн
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IXTH2N150L IXTH2N150L.pdf
IXTH2N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2A; 290W; TO247-3; 1.86us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 15Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1.86µs
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IXTK90N25L2 IXTK(X)90N25L2.pdf
IXTK90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; TO264; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: TO264
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 266ns
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MCC162-16io1 MCC162-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4788.94 грн
6+4275.70 грн
В кошику  од. на суму  грн.
MCC162-16IO1B PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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MCC162-18io1 MCC162-18IO1-dte.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 6.48kA
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4918.55 грн
6+4421.46 грн
12+4391.56 грн
В кошику  од. на суму  грн.
MCC162-18IO1B PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 181A; Y4-M6; Ufmax: 1.25V
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.25V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXFT180N20X3HV IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFT180N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO268
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1162.42 грн
2+865.60 грн
3+817.76 грн
В кошику  од. на суму  грн.
IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 8.3mΩ
Mounting: SMD
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1288.00 грн
3+1130.97 грн
30+1115.27 грн
В кошику  од. на суму  грн.
IXFT150N20T IXFH(T)150N20T.pdf
IXFT150N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT16N120P IXFH(T)16N120P.pdf
IXFT16N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 16A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Power dissipation: 660W
Case: TO268
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
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IXFT340N075T2 IXFH(T)340N075T2.pdf
IXFT340N075T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 340A; 935W; TO268; 75ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 340A
Power dissipation: 935W
Case: TO268
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 75ns
Features of semiconductor devices: thrench gate power mosfet
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IXFT60N50P3 IXF_60N50P3.pdf
IXFT60N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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IXFT69N30P IXFH(T)69N30P.pdf
IXFT69N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 69A; 500W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 69A
Power dissipation: 500W
Case: TO268
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
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В кошику  од. на суму  грн.
IXFT70N20Q3 IXFH(T)70N20Q3.pdf
IXFT70N20Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 70A
Power dissipation: 690W
Case: TO268
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IXFT70N30Q3 IXFH(T)70N30Q3.pdf
IXFT70N30Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Power dissipation: 830W
Case: TO268
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
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IXFT96N20P IXFH(T,V)96N20P.pdf
IXFT96N20P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO268
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
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IXFT100N30X3HV IXF_100N30X3_HV.pdf 300VProductBrief.pdf
IXFT100N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 100A
Power dissipation: 480W
Case: TO268
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 130ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT150N17T2 IXFT150N17T2.pdf
IXFT150N17T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 175V
Drain current: 150A
Power dissipation: 880W
Case: TO268
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 233nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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IXFT150N25X3HV IXFH150N25X3.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Power dissipation: 735W
Case: TO268HV
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT18N100Q3 IXFH(T)18N100Q3.pdf
IXFT18N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 830W
Case: TO268
On-state resistance: 0.66Ω
Mounting: SMD
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhancement
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IXFT20N80P IXFH(T,V)20N80P_S.pdf
IXFT20N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO268
On-state resistance: 0.52Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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IXFT220N20X3HV IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFT220N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO268
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±20V
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IXFT26N60P IXFH26N60P.pdf
IXFT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N85XHV IXFH30N85X_IXFT30N85XHV.pdf
IXFT30N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 30A; 695W; TO268HV; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 30A
Power dissipation: 695W
Case: TO268HV
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
Features of semiconductor devices: ultra junction x-class
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IXFT36N50P IXFH(V,T)36N50P_S.pdf
IXFT36N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO268
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFT36N60P IXFH(K,T)36N60P.pdf
IXFT36N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO268
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
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IXFT40N85XHV IXFT40N85X.PDF
IXFT40N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 40A; 860W; TO268HV; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO268HV
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
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MCMA110P1600TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 110A; Ifmax: 170A; TO240AA
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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CPC3703CTR CPC3703.pdf
CPC3703CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.36A; 1.1W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.36A
Power dissipation: 1.1W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 2002 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+74.86 грн
10+55.02 грн
32+28.03 грн
86+26.46 грн
500+26.31 грн
1000+25.49 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
VUM33-06PH media?resourcetype=datasheets&itemid=35E1EAD4-02BD-42D5-B91A-46AE09552393&filename=Littelfuse-Power-Semiconductors-VUM33-06PH-Datasheet
VUM33-06PH
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 50A; V1-B-Pack; FASTON connectors
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 50A
Case: V1-B-Pack
Topology: boost chopper; single-phase diode bridge
Electrical mounting: FASTON connectors
Polarisation: unipolar
On-state resistance: 0.12Ω
Power dissipation: 500W
Gate-source voltage: ±20V
Mechanical mounting: screw
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DSEP2X31-12A description media?resourcetype=datasheets&itemid=9c404301-9b52-434d-94d6-c96c0ef74990&filename=Littelfuse-Power-Semiconductors-DSEP2x31-12A-Datasheet
DSEP2X31-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 30Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 200A
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.77V
Load current: 30A x2
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1927.98 грн
2+1693.09 грн
В кошику  од. на суму  грн.
DSEP2X31-03A description media?resourcetype=datasheets&itemid=e421385f-2d09-4cb8-a0b8-5c30299b69b5&filename=Littelfuse-Power-Semiconductors-DSEP2x31-03A-Datasheet
DSEP2X31-03A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 300V; If: 30Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 0.3kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 300V
Max. forward voltage: 0.9V
Load current: 30A x2
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1744.44 грн
В кошику  од. на суму  грн.
DSEP2X61-12A description DSEP2x61-12A.pdf
DSEP2X61-12A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 60Ax2; SOT227B; screw
Semiconductor structure: double independent
Max. forward impulse current: 0.8kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: SOT227B
Max. off-state voltage: 1.2kV
Max. forward voltage: 2.42V
Load current: 60A x2
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MIXG180W1200PTEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 195A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
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MIXG180W1200TEH media?resourcetype=datasheets&amp;itemid=2926fee0-4fd4-467d-a793-c5df74bfe655&amp;filename=littelfuse%2520power%2520semiconductors%2520mixg180w1200teh%2520datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 195A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
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VMO60-05F PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 60A; TO240AA; Idm: 240A; 590W
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 60A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 65mΩ
Pulsed drain current: 240A
Power dissipation: 590W
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 405nC
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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VMO650-01F VMO650-01F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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VMO550-01F VMO550-01F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 590A; Y3-DCB; Idm: 2.36kA; 2.2kW
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 590A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 2.1mΩ
Pulsed drain current: 2.36kA
Power dissipation: 2.2kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTQ69N30P IXTQ69N30P-DTE.pdf
IXTQ69N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Case: TO3P
Reverse recovery time: 330ns
Drain-source voltage: 300V
Drain current: 69A
On-state resistance: 49mΩ
Type of transistor: N-MOSFET
Power dissipation: 500W
Polarisation: unipolar
Kind of package: tube
Gate charge: 156nC
Technology: Polar™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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IXFK140N20P IXFK140N20P.pdf
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P.pdf
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P-DTE.pdf
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 180ns
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CPC1967J CPC1967.pdf
CPC1967J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Operating temperature: -40...85°C
On-state resistance: 0.85Ω
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Kind of output: MOSFET
Insulation voltage: 2.5kV
Contacts configuration: SPST-NO
Max. operating current: 1350mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 100mA
Manufacturer series: OptoMOS
Mounting: THT
Case: i4-pac
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1125.39 грн
3+988.20 грн
В кошику  од. на суму  грн.
MEA250-12DA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Semiconductor structure: common anode
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: diode
Case: Y4-M6
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.54V
Load current: 260A
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DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
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IXTH52P10P IXT_52P10P.pdf
IXTH52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Mounting: THT
Reverse recovery time: 120ns
Drain-source voltage: -100V
Drain current: -52A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 60nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO247-3
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+529.69 грн
3+352.82 грн
7+333.38 грн
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IXTH32P20T IXT_32P20T.pdf
IXTH32P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -32A; 300W; 190ns
Mounting: THT
Reverse recovery time: 190ns
Drain-source voltage: -200V
Drain current: -32A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 185nC
Technology: TrenchP™
Kind of channel: enhancement
Gate-source voltage: ±15V
Case: TO247-3
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CPC1961G CPC1961.pdf
CPC1961G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: DIP8
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+240.70 грн
9+107.64 грн
23+101.66 грн
Мінімальне замовлення: 2
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CS20-25mo1F CS20-25mo1F.pdf
CS20-25mo1F
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.5kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Mounting: THT
Max. off-state voltage: 2.5kV
Load current: 18A
Gate current: 250mA
Max. forward impulse current: 200A
Kind of package: tube
Type of thyristor: thyristor
Case: ISOPLUS i4-pac™ x024c
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+981.30 грн
3+861.12 грн
10+859.62 грн
25+828.23 грн
В кошику  од. на суму  грн.
PLA150S PLA150.pdf
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+303.48 грн
5+207.80 грн
12+198.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA140S PLA140.pdf
PLA140S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+405.72 грн
4+222.01 грн
11+211.54 грн
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PLA150 PLA150.pdf
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
On-state resistance: 7Ω
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP6
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+356.62 грн
5+207.06 грн
12+197.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PAA140L PAA140L.pdf
PAA140L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
на замовлення 71 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+610.19 грн
3+373.00 грн
7+355.81 грн
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PAA191 PAA191.pdf
PAA191
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
On-state resistance: 8Ω
Turn-on time: 3ms
Turn-off time: 1ms
Body dimensions: 9.65x6.35x3.3mm
Kind of output: MOSFET
Insulation voltage: 5kV
Contacts configuration: SPST-NO x2
Max. operating current: 250mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Case: DIP8
на замовлення 35 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+849.28 грн
3+360.30 грн
7+343.85 грн
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CPC1966YX6 CPC1966YX6.pdf
CPC1966YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 500µs
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 3.75kV
Switching method: instantaneous switching
Max. operating current: 3A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 600V AC
Control current max.: 50mA
Mounting: THT
Case: SIP4
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+512.78 грн
3+348.34 грн
7+329.65 грн
25+320.68 грн
В кошику  од. на суму  грн.
CPC1943G CPC1943.pdf
CPC1943G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Switching method: zero voltage switching
Max. operating current: 0.5A
Type of relay: solid state
Relay variant: 1-phase
Switched voltage: max. 400V AC
Control current max.: 100mA
Mounting: THT
Case: DIP6
на замовлення 133 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+615.82 грн
3+321.42 грн
8+304.23 грн
В кошику  од. на суму  грн.
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