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IXFH50N85X IXFH50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
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IXFK50N85X IXFK50N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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IXFT50N85XHV IXFT50N85XHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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IXFL60N80P IXFL60N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CE4DFB94E38BF&compId=IXFL60N80P.pdf?ci_sign=14d35fc1daeea8bcc23aadfea27e0ee8d937e822 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
Technology: HiPerFET™; Polar™
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DSEP29-06AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
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IXTQ36N30P IXTQ36N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXTQ36N50P IXTQ36N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC503657D27820&compId=IXTH(Q%2CT%2CV)36N50P_S.pdf?ci_sign=17f0299f0cfe8dfdd510cfa36f130136758aa83f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
1+734.79 грн
2+609.32 грн
5+576.00 грн
10+553.78 грн
В кошику  од. на суму  грн.
MIXA60HU1200VA IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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CS22-12IO1M CS22-12IO1M IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Mounting: THT
Type of thyristor: thyristor
Case: TO220FP
Kind of package: tube
Gate current: 30mA
Load current: 16A
Max. load current: 25A
Max. forward impulse current: 0.3kA
на замовлення 511 шт:
термін постачання 21-30 дні (днів)
3+206.77 грн
8+122.18 грн
21+115.83 грн
100+111.07 грн
Мінімальне замовлення: 3
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MCD310-16io1 MCD310-16io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-14io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0B2FDEB820C4&compId=MCD310-14io1.pdf?ci_sign=00fbb4d604f8405018cfb4b56df66dd520653095 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-22io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD113CF9ADA0C4&compId=MCD310-22io1.pdf?ci_sign=63242742baba2ae9225ac6a7477b47acdff599c6 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-08io1 MCD310-08io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0492542500C4&compId=MCD310-08io1.pdf?ci_sign=d303b0848289dea0f44ec94723234648c15d8b4a Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-12io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD07D926FCE0C4&compId=MCD310-12io1.pdf?ci_sign=7fc65a1f06075907c416a63cf45cd466384ae6a8 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-18io1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0E48ED5000C4&compId=MCD310-18io1.pdf?ci_sign=3e506bc14b2a7601a21596385e243e1ca07d6c77 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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IXFR40N90P IXFR40N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DFE240X600NA DFE240X600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2442.76 грн
2+2251.62 грн
3+2227.02 грн
В кошику  од. на суму  грн.
MG17100S-BN4MM IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Case: Y4-M5
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
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CPC1580P IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1580PTR IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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IXYH75N65C3 IXYH75N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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MWI50-12A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: NPT
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MWI50-12T7T IXYS MWI50-12T7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
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VBO22-08NO8 VBO22-08NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
1+710.87 грн
2+576.00 грн
5+544.26 грн
10+523.63 грн
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VBO22-16NO8 VBO22-16NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
1+1038.11 грн
2+726.74 грн
3+725.94 грн
4+687.07 грн
5+686.28 грн
20+660.09 грн
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VBO22-18NO8 VBO22-18NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13AF821B920C7&compId=VBO22-18NO8.pdf?ci_sign=bdf45c6fe933652338ef5355d9bb4feda13b90ac Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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VBO22-12NO8 VBO22-12NO8 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13486DBFD40C7&compId=VBO22-12NO8.pdf?ci_sign=b86a16e2a44a0ba14050a3e6239299f2ef4f31c5 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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IX2120B IX2120B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Supply voltage: 15...20V
Number of channels: 2
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
4+112.66 грн
Мінімальне замовлення: 4
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CS30-12IO1 CS30-12IO1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
1+478.47 грн
4+277.68 грн
10+262.61 грн
30+261.02 грн
В кошику  од. на суму  грн.
IXFH140N20X3 IXFH140N20X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
1+921.91 грн
2+682.31 грн
4+644.23 грн
В кошику  од. на суму  грн.
IXFN140N20P IXFN140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e description Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P IXFK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P IXFR140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P IXTK140N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
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IXTP26P10T IXTP26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
3+133.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY26P10T IXTY26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
товару немає в наявності
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IXTA26P10T IXTA26P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
товару немає в наявності
В кошику  од. на суму  грн.
LDA210S LDA210S IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 2
Case: SOP8
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
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LCA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494619781A0C7&compId=LCA210L.pdf?ci_sign=7ead4652b960bef30b34aa932e997dfc6a07aed4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
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В кошику  од. на суму  грн.
LDA210STR LDA210STR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Turn-on time: 7µs
Turn-off time: 20µs
Mounting: SMD
Trigger current: 1A
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
товару немає в наявності
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IXFT26N60P IXFT26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P IXTQ26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXTT26N60P IXTT26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXDD614YI IXDD614YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
1+427.21 грн
4+246.74 грн
11+233.25 грн
50+224.53 грн
В кошику  од. на суму  грн.
IXDN630YI IXDN630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
1+614.32 грн
2+477.62 грн
6+451.43 грн
25+434.77 грн
50+433.98 грн
В кошику  од. на суму  грн.
IXDD609YI IXDD609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 862 шт:
термін постачання 21-30 дні (днів)
2+217.02 грн
6+159.47 грн
17+149.95 грн
100+145.98 грн
250+144.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI609YI IXDI609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
2+240.09 грн
6+171.37 грн
10+168.20 грн
15+161.85 грн
25+157.09 грн
50+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609YI IXDN609YI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 814 шт:
термін постачання 21-30 дні (днів)
2+220.44 грн
7+152.33 грн
17+143.60 грн
100+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI630MYI IXDI630MYI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
1+781.79 грн
3+445.09 грн
6+420.49 грн
50+404.62 грн
В кошику  од. на суму  грн.
IXDI630YI IXDI630YI IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
1+710.87 грн
2+477.62 грн
6+451.43 грн
В кошику  од. на суму  грн.
DAA200XA1800NA DAA200XA1800NA IXYS Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
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В кошику  од. на суму  грн.
IXGK100N170 IXGK100N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
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IXFA22N65X2 IXFA22N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
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DSDI60-18A DSDI60-18A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
1+854.41 грн
2+625.19 грн
3+624.39 грн
5+590.28 грн
В кошику  од. на суму  грн.
DSB30C45HB DSB30C45HB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F3762C81D8BF&compId=DSB30C45HB.pdf?ci_sign=b161982be0075e64c6fdfe6b02bf980f9890383b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
6+66.64 грн
10+63.47 грн
30+60.30 грн
120+58.71 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DSB30C60PB DSB30C60PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9FC978F87D8BF&compId=DSB30C60PB.pdf?ci_sign=0d5a96217a129ccb8634621d64f68ba9d68ef08a Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.64V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
5+81.72 грн
10+72.20 грн
14+71.40 грн
36+67.44 грн
50+65.06 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DSB30C30PB DSB30C30PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9EF80D63918BF&compId=DSB30C30PB.pdf?ci_sign=e3b2e1d3b30d6cb3859e7bd8d5bcae0f32f2b233 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.44V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товару немає в наявності
В кошику  од. на суму  грн.
DSB30C45PB DSB30C45PB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F8AD3DC0F8BF&compId=DSB30C45PB.pdf?ci_sign=bb791a637b6c85b6762bc6468860844fe4a645a6 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товару немає в наявності
В кошику  од. на суму  грн.
IXKN45N80C IXKN45N80C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EFA0178ACB99820&compId=IXKN45N80C.pdf?ci_sign=3a67251ab3748ae8b17238230362fb2fdf304e04 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Kind of channel: enhancement
Gate charge: 360nC
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 800ns
товару немає в наявності
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IXKR25N80C IXKR25N80C IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9C35AC94E78BF&compId=IXKR25N80C.pdf?ci_sign=d4d0a062d2af329a2a082f1126544ec91bfbf883 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
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IXFH50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFH50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 50A; 890W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 218ns
Gate-source voltage: ±30V
Technology: HiPerFET™; X-Class
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IXFK50N85X pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFK50N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO264; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO264
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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IXFT50N85XHV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBEC6F854298BF&compId=IXF_50N85X.pdf?ci_sign=56532bb3aee648f73e62c996a617b6c80a0adc91
IXFT50N85XHV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 50A; 890W; TO268HV; 218ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 50A
Power dissipation: 890W
Case: TO268HV
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 218ns
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В кошику  од. на суму  грн.
IXFL60N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8CE4DFB94E38BF&compId=IXFL60N80P.pdf?ci_sign=14d35fc1daeea8bcc23aadfea27e0ee8d937e822
IXFL60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 250nC
Technology: HiPerFET™; Polar™
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DSEP29-06AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4C8F8157AA0C4&compId=DSEP29-06AS.pdf?ci_sign=50c34a2ad249817c71d592c2774d312317cb3639
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 35ns; D2PAK; Ufmax: 1.26V; 165W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: D2PAK
Max. forward voltage: 1.26V
Max. forward impulse current: 250A
Power dissipation: 165W
Technology: HiPerFRED™
Kind of package: tube
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IXTQ36N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF906B09D5DD9E27&compId=IXTA36N30P-DTE.pdf?ci_sign=efd75c498f499d820170bf97b7322d8ea4c63184
IXTQ36N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 36A; 300W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXTQ36N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC503657D27820&compId=IXTH(Q%2CT%2CV)36N50P_S.pdf?ci_sign=17f0299f0cfe8dfdd510cfa36f130136758aa83f
IXTQ36N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 36A; 540W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 36A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+734.79 грн
2+609.32 грн
5+576.00 грн
10+553.78 грн
В кошику  од. на суму  грн.
MIXA60HU1200VA
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 60A
Pulsed collector current: 150A
Electrical mounting: FASTON connectors
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Mechanical mounting: screw
Topology: boost chopper; buck chopper; H-bridge
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CS22-12IO1M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B39BD91F287CDE28&compId=CS22-12IO1M-DTE.pdf?ci_sign=7059b06fb11b31f481f0878b05422bdcb307ce1a
CS22-12IO1M
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 25A; 16A; Igt: 30mA; TO220FP; THT; tube
Max. off-state voltage: 1.2kV
Mounting: THT
Type of thyristor: thyristor
Case: TO220FP
Kind of package: tube
Gate current: 30mA
Load current: 16A
Max. load current: 25A
Max. forward impulse current: 0.3kA
на замовлення 511 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+206.77 грн
8+122.18 грн
21+115.83 грн
100+111.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MCD310-16io1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE4B6A4D62B1B656469&compId=MCC310-16IO1.pdf?ci_sign=dfdc991fb77337f659d202ac945f6212a22fef1a
MCD310-16io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-14io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0B2FDEB820C4&compId=MCD310-14io1.pdf?ci_sign=00fbb4d604f8405018cfb4b56df66dd520653095
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-22io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD113CF9ADA0C4&compId=MCD310-22io1.pdf?ci_sign=63242742baba2ae9225ac6a7477b47acdff599c6
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-08io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0492542500C4&compId=MCD310-08io1.pdf?ci_sign=d303b0848289dea0f44ec94723234648c15d8b4a
MCD310-08io1
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-12io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD07D926FCE0C4&compId=MCD310-12io1.pdf?ci_sign=7fc65a1f06075907c416a63cf45cd466384ae6a8
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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MCD310-18io1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFD0E48ED5000C4&compId=MCD310-18io1.pdf?ci_sign=3e506bc14b2a7601a21596385e243e1ca07d6c77
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Electrical mounting: screw
Case: Y2-DCB
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.09V
Load current: 320A
Max. load current: 500A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9.2kA
Kind of package: bulk
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IXFR40N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6C7F820&compId=IXFR40N90P.pdf?ci_sign=dc315346ddb98b058b9e3318608cbac74407300d
IXFR40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DFE240X600NA pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA995A1F2407680C7&compId=DFE240X600NA.pdf?ci_sign=eb8958e4591736478ecee9d24bfca02d7dcd69df
DFE240X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Case: SOT227B
Type of semiconductor module: diode
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2442.76 грн
2+2251.62 грн
3+2227.02 грн
В кошику  од. на суму  грн.
MG17100S-BN4MM
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 100A
Electrical mounting: FASTON connectors; screw
Technology: Field Stop; Trench
Mechanical mounting: screw
Case: Y4-M5
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
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CPC1580P pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: tube
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CPC1580PTR pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDEA539A3A20D5&compId=CPC1580.pdf?ci_sign=8487a83707570fd3a414431891f1b3b7a340f3e4
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; Flatpack 8pin; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: Flatpack 8pin
Number of channels: 1
Mounting: SMD
Operating temperature: -40...110°C
Kind of package: reel; tape
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IXYH75N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA9CC3DBEE55820&compId=IXYH75N65C3.pdf?ci_sign=83a14405d58a0734a9b50875b6ba75d0d3f838e7
IXYH75N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Turn-off time: 179ns
Turn-on time: 90ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Collector-emitter voltage: 650V
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MWI50-12A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Collector current: 60A
Case: E2-Pack
Application: motors
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Technology: NPT
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MWI50-12T7T MWI50-12T7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 270W
Mechanical mounting: screw
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VBO22-08NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B12C9F6B6540C7&compId=VBO22-08NO8.pdf?ci_sign=1fbe7e5633960b7d58e4762058e773b0db93c70e
VBO22-08NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 39 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+710.87 грн
2+576.00 грн
5+544.26 грн
10+523.63 грн
В кошику  од. на суму  грн.
VBO22-16NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B1384D1645E0C7&compId=VBO22-16NO8.pdf?ci_sign=23b029c4e1880883b4d18582f432dd6cd01b04bd
VBO22-16NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.6kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1038.11 грн
2+726.74 грн
3+725.94 грн
4+687.07 грн
5+686.28 грн
20+660.09 грн
В кошику  од. на суму  грн.
VBO22-18NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13AF821B920C7&compId=VBO22-18NO8.pdf?ci_sign=bdf45c6fe933652338ef5355d9bb4feda13b90ac
VBO22-18NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.8kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.8kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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VBO22-12NO8 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B13486DBFD40C7&compId=VBO22-12NO8.pdf?ci_sign=b86a16e2a44a0ba14050a3e6239299f2ef4f31c5
VBO22-12NO8
Виробник: IXYS
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 14A; Ifsm: 380A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Load current: 14A
Max. forward impulse current: 380A
Version: square
Case: FO-B
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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IX2120B pVersion=0046&contRep=ZT&docId=005056AB82531EE98D85EE30198B98BF&compId=IX2120.pdf?ci_sign=47bd2d4a0f5d64523f2a893f5797acc77844756c
IX2120B
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Mounting: SMD
Kind of package: tube
Operating temperature: -40...150°C
Supply voltage: 15...20V
Number of channels: 2
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
на замовлення 232 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+112.66 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CS30-12IO1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A1C4E460781E27&compId=CS30-12IO1-DTE.pdf?ci_sign=e71831bbd611d0d403ce659e4ecabb1a51f3954c
CS30-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+478.47 грн
4+277.68 грн
10+262.61 грн
30+261.02 грн
В кошику  од. на суму  грн.
IXFH140N20X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FB9546E19838BF&compId=IXF_140N20X3_HV.pdf?ci_sign=5f16c11710985b2bb02fe789af00928edbff0f87 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC186ADB6078BF&compId=200VProductBrief.pdf?ci_sign=52b6588eb58e96179c68704188c80a5780ab2a1b
IXFH140N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+921.91 грн
2+682.31 грн
4+644.23 грн
В кошику  од. на суму  грн.
IXFN140N20P description pVersion=0046&contRep=ZT&docId=005056AB82531EE98C8C66907012B8BF&compId=IXFN140N20P.pdf?ci_sign=a0e4bc6acd78ecb9536f9dcaae8667685d73f53e
IXFN140N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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IXFK140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94595727F820&compId=IXFK140N20P.pdf?ci_sign=d20ac8ee9e68221e8632f05c33f67c84eb8fecee
IXFK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 140A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 830W
Case: TO264
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXFR140N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6AB1820&compId=IXFR140N20P.pdf?ci_sign=b301331a199d3b8298da379b97dfd03e718d0239
IXFR140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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IXTK140N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF91769AF6A03E27&compId=IXTK140N20P-DTE.pdf?ci_sign=08600a905672f16d4200168350a2bb2948e0f97d
IXTK140N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 140A; 800W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 800W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Technology: PolarHT™
товару немає в наявності
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IXTP26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTP26P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; 70ns
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+133.29 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTY26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO252
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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IXTA26P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA08E4B31BC18BF&compId=IXT_26P10T.pdf?ci_sign=c33656444a550e5f0b85a72d96ed77f965b03124
IXTA26P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
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LDA210S pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210S
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: Darlington; 3.75kV; SOP8
Turn-on time: 8µs
Turn-off time: 345µs
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 2
Case: SOP8
CTR@If: 300-30000%@1mA
Insulation voltage: 3.75kV
Kind of output: Darlington
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LCA210STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494619781A0C7&compId=LCA210L.pdf?ci_sign=7ead4652b960bef30b34aa932e997dfc6a07aed4
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPDT; Icntrl max: 100mA; 85mA; max.350VAC; 35Ω
Operating temperature: -40...85°C
Contacts configuration: SPDT
Type of relay: solid state
Relay variant: 1-phase; current source
Turn-on time: 3ms
Turn-off time: 3ms
Mounting: SMT
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Max. operating current: 85mA
Control current max.: 100mA
Case: DIP8
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
товару немає в наявності
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LDA210STR pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79AC5A7355F41EC&compId=LDA210S.pdf?ci_sign=5a79258bba6a8a2cd9ee16e60c4dcb8de005b71a
LDA210STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; 3.75kV; CTR@If: 33-1000%@1mA; 1A
Turn-on time: 7µs
Turn-off time: 20µs
Mounting: SMD
Trigger current: 1A
Type of optocoupler: optocoupler
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
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IXFT26N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492
IXFT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
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IXTQ26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTQ26N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
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IXTT26N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D522F688F8B820&compId=IXTH(Q%2CT%2CV)26N60P_S.pdf?ci_sign=00e2f7b4fe95c5c6f2d8b57fcefc771d8841088e
IXTT26N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
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IXDD614YI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -14...14A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+427.21 грн
4+246.74 грн
11+233.25 грн
50+224.53 грн
В кошику  од. на суму  грн.
IXDN630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDN630YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 114 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+614.32 грн
2+477.62 грн
6+451.43 грн
25+434.77 грн
50+433.98 грн
В кошику  од. на суму  грн.
IXDD609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDD609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 862 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+217.02 грн
6+159.47 грн
17+149.95 грн
100+145.98 грн
250+144.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDI609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+240.09 грн
6+171.37 грн
10+168.20 грн
15+161.85 грн
25+157.09 грн
50+155.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN609YI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DEA99A092E0A469&compId=IXDD609CI.pdf?ci_sign=243305527959d7020fbdbc5ea293adbfbef4a7e6
IXDN609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Output current: -9...9A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 4.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: non-inverting
Turn-off time: 105ns
Turn-on time: 115ns
на замовлення 814 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+220.44 грн
7+152.33 грн
17+143.60 грн
100+138.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDI630MYI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630MYI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 110 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+781.79 грн
3+445.09 грн
6+420.49 грн
50+404.62 грн
В кошику  од. на суму  грн.
IXDI630YI pVersion=0046&contRep=ZT&docId=005056AB82531EE98D875D8EAC1A78BF&compId=IXD_630.pdf?ci_sign=6691b6fa21018ff2c79d3fb6449ba0909ac8793c
IXDI630YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -30÷30A; Ch: 1; 12.5÷35V
Type of integrated circuit: driver
Output current: -30...30A
Case: TO263-5
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Number of channels: 1
Supply voltage: 12.5...35V
Kind of integrated circuit: gate driver; low-side
Kind of output: inverting
Turn-off time: 135ns
Turn-on time: 135ns
на замовлення 192 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+710.87 грн
2+477.62 грн
6+451.43 грн
В кошику  од. на суму  грн.
DAA200XA1800NA
DAA200XA1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 100Ax2; SOT227B
Features of semiconductor devices: avalanche breakdown effect
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.21V
Load current: 100A x2
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.5kA
товару немає в наявності
В кошику  од. на суму  грн.
IXGK100N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD0A6DAFB799820&compId=IXGK(X)100N170.pdf?ci_sign=c8053da6d72a2c79586ce8a850d84b1d66a7da31
IXGK100N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
товару немає в наявності
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IXFA22N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A7E33E399F98BF&compId=IXF_22N65X2.pdf?ci_sign=0c8f69f0a301813161ad4a66663b73b0511fd05a
IXFA22N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 390W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X2-Class
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В кошику  од. на суму  грн.
DSDI60-18A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-18A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+854.41 грн
2+625.19 грн
3+624.39 грн
5+590.28 грн
В кошику  од. на суму  грн.
DSB30C45HB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F3762C81D8BF&compId=DSB30C45HB.pdf?ci_sign=b161982be0075e64c6fdfe6b02bf980f9890383b
DSB30C45HB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO247-3; Ufmax: 0.54V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.54V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+66.64 грн
10+63.47 грн
30+60.30 грн
120+58.71 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DSB30C60PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9FC978F87D8BF&compId=DSB30C60PB.pdf?ci_sign=0d5a96217a129ccb8634621d64f68ba9d68ef08a
DSB30C60PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 15Ax2; TO220AB; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.64V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+81.72 грн
10+72.20 грн
14+71.40 грн
36+67.44 грн
50+65.06 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DSB30C30PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9EF80D63918BF&compId=DSB30C30PB.pdf?ci_sign=e3b2e1d3b30d6cb3859e7bd8d5bcae0f32f2b233
DSB30C30PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.44V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.44V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товару немає в наявності
В кошику  од. на суму  грн.
DSB30C45PB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9F8AD3DC0F8BF&compId=DSB30C45PB.pdf?ci_sign=bb791a637b6c85b6762bc6468860844fe4a645a6
DSB30C45PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
товару немає в наявності
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IXKN45N80C pVersion=0046&contRep=ZT&docId=005056AB82531ED99EFA0178ACB99820&compId=IXKN45N80C.pdf?ci_sign=3a67251ab3748ae8b17238230362fb2fdf304e04
IXKN45N80C
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 44A; SOT227B; screw; 380W; 360nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 380W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 74mΩ
Kind of channel: enhancement
Gate charge: 360nC
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Reverse recovery time: 800ns
товару немає в наявності
В кошику  од. на суму  грн.
IXKR25N80C pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9C35AC94E78BF&compId=IXKR25N80C.pdf?ci_sign=d4d0a062d2af329a2a082f1126544ec91bfbf883
IXKR25N80C
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
товару немає в наявності
В кошику  од. на суму  грн.
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