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DPF60C300HB DPF60C300HB IXYS DPF60C300HB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+561.89 грн
3+374.50 грн
7+353.57 грн
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DPG30I300PA DPG30I300PA IXYS media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
2+234.26 грн
8+124.83 грн
10+122.59 грн
20+118.10 грн
50+113.62 грн
Мінімальне замовлення: 2
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DPF30I300PA DPF30I300PA IXYS DPF30I300PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
2+263.24 грн
3+221.26 грн
5+179.40 грн
14+169.68 грн
Мінімальне замовлення: 2
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DPF60C200HB DPF60C200HB IXYS Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.91V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+402.50 грн
В кошику  од. на суму  грн.
IXTH24N65X2 IXTH24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXFA34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXTT34N65X2HV IXTT34N65X2HV IXYS IXTT34N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
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PLA192 PLA192 IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192S PLA192S IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192E PLA192E IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192STR IXYS PLA192.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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OMA160S OMA160S IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
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OMA160STR IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
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VGO36-16IO7 VGO36-16IO7 IXYS VGO36-16io7.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Load current: 36A
Gate current: 65mA
Max. forward impulse current: 280A
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1266.26 грн
3+1111.53 грн
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MCC26-16io1B MCC26-16io1B IXYS MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1783.88 грн
2+1566.76 грн
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MDD26-16N1B MDD26-16N1B IXYS MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
1+1525.48 грн
2+1339.52 грн
3+1338.77 грн
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IXTK200N10L2 IXTK200N10L2 IXYS IXT_200N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Reverse recovery time: 245ns
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 540nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
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DSSS35-008AR DSSS35-008AR IXYS DSSS35-008AR.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
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LAA710 LAA710 IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710S LAA710S IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710STR IXYS LAA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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IXTH20P50P IXTH20P50P IXYS IXT_20P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Case: TO247-3
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -20A
On-state resistance: 0.45Ω
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 453 шт:
термін постачання 21-30 дні (днів)
1+651.24 грн
2+524.74 грн
5+495.59 грн
60+489.61 грн
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LOC110 LOC110 IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
2+213.32 грн
9+103.90 грн
24+98.67 грн
Мінімальне замовлення: 2
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LOC110S LOC110S IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
2+228.62 грн
9+102.41 грн
24+97.18 грн
100+95.68 грн
Мінімальне замовлення: 2
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LOC110P LOC110P IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110STR LOC110STR IXYS LOC110.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC2907B CPC2907B IXYS CPC2907B.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+767.16 грн
2+518.02 грн
5+489.61 грн
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IXFR44N80P IXFR44N80P IXYS IXFR44N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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MG12300D-BN2MM IXYS media?resourcetype=datasheets&itemid=96b0faab-d906-413a-8e95-40022164d554&filename=littelfuse_power_semiconductor_igbt_module_mg12300d_bn2mm_datasheet.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Technology: Field Stop; Trench
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MIXA600PF650TSF IXYS MIXA600PF650TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Case: SimBus F
Application: fans; for pump; for UPS; motors
Power dissipation: 1.75kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 490A
Pulsed collector current: 1.2kA
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IXFT42N50P2 IXFT42N50P2 IXYS IXFH(T)42N50P2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Drain current: 42A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 830W
Case: TO268
Kind of package: tube
Gate charge: 92nC
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 500V
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DSEI8-06AS-TUB DSEI8-06AS-TUB IXYS DSEI8-06A_DSEI8-06AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Technology: FRED
Power dissipation: 50W
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
3+194.81 грн
9+102.41 грн
24+97.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDD614SI IXDD614SI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
2+297.04 грн
5+193.60 грн
13+183.14 грн
50+175.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDD614PI IXDD614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1052 шт:
термін постачання 21-30 дні (днів)
3+180.32 грн
8+113.62 грн
22+106.89 грн
500+103.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDD614YI IXDD614YI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
1+478.17 грн
4+231.72 грн
10+230.98 грн
11+219.02 грн
100+210.80 грн
В кошику  од. на суму  грн.
IXDD614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDN614PI IXDN614PI IXYS IXDD614CI-DTE.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
2+272.09 грн
8+113.62 грн
22+106.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXDN614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXTH10P50P IXTH10P50P IXYS IXT_10P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
1+537.74 грн
3+383.47 грн
7+362.54 грн
В кошику  од. на суму  грн.
IXGT16N170A IXGT16N170A IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
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IXGT16N170 IXGT16N170 IXYS IXGH16N170-DTE.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
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IXGT16N170AH1 IXGT16N170AH1 IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
2+210.91 грн
3+178.65 грн
7+141.28 грн
18+133.80 грн
50+133.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG30C300HB DPG30C300HB IXYS Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO247-3
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
2+310.73 грн
6+148.75 грн
17+140.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG30C300PC-TRL IXYS DPG30C300PC.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.51V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™
Kind of package: reel; tape
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IXTY2N100P IXTY2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+402.50 грн
В кошику  од. на суму  грн.
IXTA2N100P IXTA2N100P IXYS IXTA(P,Y)2N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
3+152.49 грн
7+137.54 грн
18+130.06 грн
50+128.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFR32N100P IXFR32N100P IXYS IXFR32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1398.28 грн
2+1228.14 грн
В кошику  од. на суму  грн.
IXFR32N100Q3 IXFR32N100Q3 IXYS IXFR32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2502.74 грн
В кошику  од. на суму  грн.
IXTP2N100P IXTP2N100P IXYS IXTA(P,Y)2N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
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IXTX22N100L IXTX22N100L IXYS IXTK(X)22N100L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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IXFN52N100X IXFN52N100X IXYS IXFN52N100X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
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IXFN32N100P IXFN32N100P IXYS IXFN32N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXFK32N100P IXFK32N100P IXYS IXFK(X)32N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXTN22N100L IXTN22N100L IXYS IXTN22N100L.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
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IXFK32N100Q3 IXFK32N100Q3 IXYS IXF_32N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
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IXFK52N100X IXFK52N100X IXYS IXFK(X)52N100X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
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IXFN32N100Q3 IXFN32N100Q3 IXYS IXFN32N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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DPF60C300HB DPF60C300HB.pdf
DPF60C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.97V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+561.89 грн
3+374.50 грн
7+353.57 грн
В кошику  од. на суму  грн.
DPG30I300PA media?resourcetype=datasheets&itemid=3E2778AE-8266-4D7A-8063-2CEE495544CC&filename=Littelfuse-Power-Semiconductors-DPG30I300PA-Datasheet
DPG30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 360A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.35V
Max. forward impulse current: 360A
Kind of package: tube
Reverse recovery time: 35ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 326 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+234.26 грн
8+124.83 грн
10+122.59 грн
20+118.10 грн
50+113.62 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPF30I300PA DPF30I300PA.pdf
DPF30I300PA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 30A; tube; Ifsm: 390A; TO220AC; 175W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.17V
Max. forward impulse current: 390A
Kind of package: tube
Reverse recovery time: 55ns
Power dissipation: 175W
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Heatsink thickness: 1.14...1.39mm
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+263.24 грн
3+221.26 грн
5+179.40 грн
14+169.68 грн
Мінімальне замовлення: 2
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DPF60C200HB
DPF60C200HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 400A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 0.91V
Max. forward impulse current: 0.4kA
Kind of package: tube
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+402.50 грн
В кошику  од. на суму  грн.
IXTH24N65X2 IXT_24N65X2.pdf
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXFA34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa34n65x3-datasheet?assetguid=7bd01bfc-f3d8-4755-8e6c-5e250cb5176f
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Reverse recovery time: 150ns
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IXTT34N65X2HV IXTT34N65X2HV.pdf
IXTT34N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO268HV; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO268HV
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
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PLA192 PLA192.pdf
PLA192
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192S PLA192.pdf
PLA192S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192E PLA192.pdf
PLA192E
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: THT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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PLA192STR PLA192.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
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OMA160S OMA160.pdf
OMA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
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OMA160STR OMA160.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
On-state resistance: 100Ω
Turn-on time: 125µs
Turn-off time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Max. operating current: 50mA
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 250V AC; max. 250V DC
Control current max.: 50mA
Operating temperature: -40...85°C
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VGO36-16IO7 VGO36-16io7.pdf
VGO36-16IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; THT
Electrical mounting: THT
Leads: wire Ø 0.75mm
Max. off-state voltage: 1.6kV
Load current: 36A
Gate current: 65mA
Max. forward impulse current: 280A
Mechanical mounting: screw
Version: module
Type of bridge rectifier: half-controlled
Case: ECO-PAC 1
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1266.26 грн
3+1111.53 грн
В кошику  од. на суму  грн.
MCC26-16io1B MCC26-16io1B.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC26-16io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 27A; TO240AA; Ufmax: 1.27V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.27V
Load current: 27A
Semiconductor structure: double series
Gate current: 100/200mA
Max. forward impulse current: 520A
Kind of package: bulk
Mechanical mounting: screw
Type of module: thyristor
Case: TO240AA
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1783.88 грн
2+1566.76 грн
В кошику  од. на суму  грн.
MDD26-16N1B MDD26-16N1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD26-16N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 36A; TO240AA; Ufmax: 1.05V
Electrical mounting: screw
Max. off-state voltage: 1.6kV
Max. load current: 60A
Max. forward voltage: 1.05V
Load current: 36A
Semiconductor structure: double series
Max. forward impulse current: 555A
Mechanical mounting: screw
Type of module: diode
Case: TO240AA
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1525.48 грн
2+1339.52 грн
3+1338.77 грн
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IXTK200N10L2 IXT_200N10L2.pdf
IXTK200N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 100V; 200A; 1040W
Mounting: THT
Reverse recovery time: 245ns
Drain-source voltage: 100V
Drain current: 200A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.04kW
Polarisation: unipolar
Kind of package: tube
Gate charge: 540nC
Technology: Linear L2™
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: TO264
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DSSS35-008AR DSSS35-008AR.pdf
DSSS35-008AR
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 35Ax2; ISOPLUS247™; 190W
Type of diode: Schottky rectifying
Case: ISOPLUS247™
Mounting: THT
Max. off-state voltage: 80V
Load current: 35A x2
Semiconductor structure: double series
Max. forward voltage: 0.68V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 190W
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LAA710 LAA710.pdf
LAA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710S LAA710.pdf
LAA710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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LAA710STR LAA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 1000mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
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IXTH20P50P IXT_20P50P.pdf
IXTH20P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -20A; 460W; TO247-3
Case: TO247-3
Reverse recovery time: 406ns
Drain-source voltage: -500V
Drain current: -20A
On-state resistance: 0.45Ω
Type of transistor: P-MOSFET
Power dissipation: 460W
Polarisation: unipolar
Kind of package: tube
Gate charge: 103nC
Technology: PolarP™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
на замовлення 453 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+651.24 грн
2+524.74 грн
5+495.59 грн
60+489.61 грн
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LOC110 LOC110.pdf
LOC110
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Case: DIP8
Kind of output: photodiode
на замовлення 243 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+213.32 грн
9+103.90 грн
24+98.67 грн
Мінімальне замовлення: 2
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LOC110S LOC110.pdf
LOC110S
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; OUT: photodiode; 3.75kV
Type of optocoupler: optocoupler
Mounting: SMD
Insulation voltage: 3.75kV
Kind of output: photodiode
на замовлення 190 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+228.62 грн
9+102.41 грн
24+97.18 грн
100+95.68 грн
Мінімальне замовлення: 2
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LOC110P LOC110.pdf
LOC110P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110PTR LOC110.pdf
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; Flatpack 8pin; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Case: Flatpack 8pin
Trigger current: 1A
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LOC110STR LOC110.pdf
LOC110STR
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Trigger current: 1A
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CPC2907B CPC2907B.pdf
CPC2907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 2000mA; OptoMOS
Operating temperature: -40...85°C
Case: PowerSO8
On-state resistance: 0.15Ω
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Body dimensions: 21.08x10.16x3.3mm
Kind of output: MOSFET
Insulation voltage: 4kV
Contacts configuration: SPST-NO x2
Max. operating current: 2A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Control current max.: 50mA
Manufacturer series: OptoMOS
Mounting: SMT
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+767.16 грн
2+518.02 грн
5+489.61 грн
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IXFR44N80P IXFR44N80P.pdf
IXFR44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 26A; 360W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 26A
Power dissipation: 360W
Case: ISOPLUS247™
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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MG12300D-BN2MM media?resourcetype=datasheets&itemid=96b0faab-d906-413a-8e95-40022164d554&filename=littelfuse_power_semiconductor_igbt_module_mg12300d_bn2mm_datasheet.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: Y3-DCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: IGBT half-bridge
Technology: Field Stop; Trench
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MIXA600PF650TSF MIXA600PF650TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 490A
Max. off-state voltage: 650V
Semiconductor structure: transistor/transistor
Case: SimBus F
Application: fans; for pump; for UPS; motors
Power dissipation: 1.75kW
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: IGBT
Technology: Sonic FRD™; XPT™
Topology: IGBT half-bridge; NTC thermistor
Gate-emitter voltage: ±20V
Collector current: 490A
Pulsed collector current: 1.2kA
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IXFT42N50P2 IXFH(T)42N50P2.pdf
IXFT42N50P2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO268
Drain current: 42A
On-state resistance: 0.145Ω
Type of transistor: N-MOSFET
Power dissipation: 830W
Case: TO268
Kind of package: tube
Gate charge: 92nC
Mounting: SMD
Kind of channel: enhancement
Polarisation: unipolar
Drain-source voltage: 500V
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DSEI8-06AS-TUB DSEI8-06A_DSEI8-06AS.pdf
DSEI8-06AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 8A; 35ns; TO263AB; Ufmax: 1.3V; 50W
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: tube
Technology: FRED
Power dissipation: 50W
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+194.81 грн
9+102.41 грн
24+97.18 грн
Мінімальне замовлення: 3
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IXDD614SI IXDD614CI-DTE.pdf
IXDD614SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 319 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+297.04 грн
5+193.60 грн
13+183.14 грн
50+175.66 грн
Мінімальне замовлення: 2
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IXDD614PI IXDD614CI-DTE.pdf
IXDD614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 1052 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+180.32 грн
8+113.62 грн
22+106.89 грн
500+103.16 грн
Мінімальне замовлення: 3
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IXDD614YI IXDD614CI-DTE.pdf
IXDD614YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 640 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+478.17 грн
4+231.72 грн
10+230.98 грн
11+219.02 грн
100+210.80 грн
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IXDD614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXDN614PI IXDD614CI-DTE.pdf
IXDN614PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Case: DIP8
Mounting: THT
Kind of package: tube
Supply voltage: 4.5...35V
Turn-on time: 140ns
Turn-off time: 130ns
Output current: -14...14A
Type of integrated circuit: driver
Number of channels: 1
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Operating temperature: -40...125°C
на замовлення 139 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.09 грн
8+113.62 грн
22+106.89 грн
Мінімальне замовлення: 2
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IXDN614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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IXTH10P50P IXT_10P50P.pdf
IXTH10P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -10A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -10A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 414ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+537.74 грн
3+383.47 грн
7+362.54 грн
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IXGT16N170A IXGH(t)16N170A_H1.pdf
IXGT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
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IXGT16N170 IXGH16N170-DTE.pdf
IXGT16N170
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 16A
Pulsed collector current: 80A
Turn-on time: 90ns
Turn-off time: 1.6µs
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 78nC
Technology: NPT
Mounting: SMD
Case: TO268
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IXGT16N170AH1 IXGH(t)16N170A_H1.pdf
IXGT16N170AH1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Collector-emitter voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 11A
Pulsed collector current: 40A
Turn-on time: 35ns
Turn-off time: 298ns
Type of transistor: IGBT
Power dissipation: 190W
Kind of package: tube
Features of semiconductor devices: high voltage
Gate charge: 70nC
Technology: NPT
Mounting: SMD
Case: TO268
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DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO220AB
Max. forward voltage: 1.26V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+210.91 грн
3+178.65 грн
7+141.28 грн
18+133.80 грн
50+133.06 грн
Мінімальне замовлення: 2
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DPG30C300HB Littelfuse-Power-Semiconductors-DPG30C300HB-Datasheet?assetguid=0400F707-7AFD-48EB-9257-C3597E59CCC5
DPG30C300HB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO247-3; 90W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO247-3
Max. forward voltage: 1.25V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™ 2nd Gen
Kind of package: tube
на замовлення 33 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+310.73 грн
6+148.75 грн
17+140.53 грн
Мінімальне замовлення: 2
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DPG30C300PC-TRL DPG30C300PC.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 15Ax2; 35ns; TO263AB; Ufmax: 1.51V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 15A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: TO263AB
Max. forward voltage: 1.51V
Max. forward impulse current: 0.24kA
Power dissipation: 90W
Technology: HiPerFRED™
Kind of package: reel; tape
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IXTY2N100P IXTA(P,Y)2N100P.pdf
IXTY2N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+402.50 грн
В кошику  од. на суму  грн.
IXTA2N100P IXTA(P,Y)2N100P.pdf
IXTA2N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+152.49 грн
7+137.54 грн
18+130.06 грн
50+128.57 грн
Мінімальне замовлення: 3
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IXFR32N100P IXFR32N100P.pdf
IXFR32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 320W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 18A
Power dissipation: 320W
Case: ISOPLUS247™
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1398.28 грн
2+1228.14 грн
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IXFR32N100Q3 IXFR32N100Q3.pdf
IXFR32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2502.74 грн
В кошику  од. на суму  грн.
IXTP2N100P IXTA(P,Y)2N100P.pdf
IXTP2N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO220AB; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Power dissipation: 86W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
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IXTX22N100L IXTK(X)22N100L.pdf
IXTX22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
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IXFN52N100X IXFN52N100X.pdf
IXFN52N100X
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 44A
Pulsed drain current: 100A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.125Ω
Gate charge: 245nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 260ns
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IXFN32N100P IXFN32N100P.pdf
IXFN32N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 27A; SOT227B; screw; Idm: 75A; 690W
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 27A
Pulsed drain current: 75A
Power dissipation: 690W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 225nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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IXFK32N100P IXFK(X)32N100P.pdf
IXFK32N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhancement
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IXTN22N100L IXTN22N100L.pdf
IXTN22N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
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IXFK32N100Q3 IXF_32N100Q3.pdf
IXFK32N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 32A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 32A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhancement
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IXFK52N100X IXFK(X)52N100X.pdf
IXFK52N100X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 52A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 245nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 260ns
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IXFN32N100Q3 IXFN32N100Q3.pdf
IXFN32N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 28A
Pulsed drain current: 96A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.32Ω
Gate charge: 195nC
Kind of channel: enhancement
Mechanical mounting: screw
Type of module: MOSFET transistor
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 300ns
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