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IXXH30N65C4D1 IXXH30N65C4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 IXYP30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 IXXH30N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
товару немає в наявності
В кошику  од. на суму  грн.
IXYH30N65C3 IXYH30N65C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 IXYH30N65C3H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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В кошику  од. на суму  грн.
IXTP36P15P IXTP36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
1+487.75 грн
10+274.30 грн
50+269.52 грн
В кошику  од. на суму  грн.
IXTR36P15P IXTR36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 150ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
2+428.50 грн
3+351.65 грн
10+315.76 грн
30+295.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA36P15P IXTA36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
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IXTH36P15P IXTH36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
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IXTQ36P15P IXTQ36P15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
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MCC95-08io1B MCC95-08io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E42C460A854A18&compId=MCC95-08io1B.pdf?ci_sign=ff1205aa795a501d5105af34eae2c48f9ea0609a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+2921.37 грн
3+2533.29 грн
10+2260.58 грн
В кошику  од. на суму  грн.
IXFH26N50P3 IXFH26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
1+498.92 грн
5+389.92 грн
10+351.65 грн
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+458.56 грн
10+351.65 грн
В кошику  од. на суму  грн.
IXTQ26N50P IXTQ26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
1+437.95 грн
3+373.97 грн
10+324.54 грн
30+320.55 грн
В кошику  од. на суму  грн.
IXFA26N50P3 IXFA26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
4+135.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 IXFQ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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IXFJ26N50P3 IXFJ26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
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IXTT26N50P IXTT26N50P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
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CPC1009NTR CPC1009NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
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IXFQ28N60P3 IXFQ28N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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MCMA110P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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OMA160S OMA160S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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OMA160STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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CPC1393GRTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
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LAA100 LAA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+368.39 грн
10+299.02 грн
250+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100L LAA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+300.55 грн
50+240.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100 LCA100 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+296.26 грн
50+180.21 грн
250+144.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100L LCA100L IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
2+307.42 грн
50+186.59 грн
250+150.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100S LCA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
3+206.09 грн
50+175.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA100LS LCA100LS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
2+224.13 грн
10+167.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100S LAA100S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
DSEI60-02A DSEI60-02A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a description Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
1+446.53 грн
3+393.91 грн
10+342.08 грн
30+314.97 грн
В кошику  од. на суму  грн.
DSEI120-12A DSEI120-12A IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
1+812.35 грн
5+697.71 грн
В кошику  од. на суму  грн.
DSEI120-12AZ-TUB DSEI120-12AZ-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+927.42 грн
3+791.00 грн
10+701.70 грн
В кошику  од. на суму  грн.
DSEI2X61-10B DSEI2X61-10B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23B903C5855EA&compId=DSEI2X61-10B.pdf?ci_sign=110b54c00102682d2e78134265b1372d8849911a Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXFK120N30P3 IXFK120N30P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFK120N25P IXFK120N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXYR100N120C3 IXYR100N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD62412DB8F820&compId=IXYR100N120C3.pdf?ci_sign=de30631e4fffbf2b67eb31519229856a9b8f4584 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
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MCMA140PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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MCMA1400E1600CD IXYS Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
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MCMA140P1800TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MDMA1400C1600CC IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83B65ED57A80C4&compId=MDMA1400C1600CC.pdf?ci_sign=3538e579689c92360b3215fffe2eb97c10f13c06 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
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MCMA140P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1400TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1600TA-NI IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
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MDMA140P1200TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB833CF4489620C4&compId=MDMA140P1200TG.pdf?ci_sign=c9764fbcb017bbcc0b9a34085463d33e10f3bff4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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MDMA140P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
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MDMA140P1800TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83404331BA00C4&compId=MDMA140P1800TG.pdf?ci_sign=67d7f1ef6eef7ae6c8809f4eb55eeafca3d9171d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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IXTA24N65X2 IXTA24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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IXTH24N65X2 IXTH24N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTY18P10T IXTY18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
2+279.94 грн
10+158.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA18P10T IXTA18P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
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IXFK420N10T IXFK420N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1210.80 грн
5+957.66 грн
В кошику  од. на суму  грн.
CPC1301GRTR CPC1301GRTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
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IXFH18N100Q3 IXFH18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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IXFT18N100Q3 IXFT18N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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CPC1014NTR CPC1014NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR CPC1020NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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CPC1025NTR CPC1025NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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IXXH30N65C4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8EFE36A0F9820&compId=IXXH30N65C4D1.pdf?ci_sign=550355bb4be0761a37e2b9743713f9f41c109a4e
IXXH30N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 161ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 136A
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IXYP30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYP30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXXH30N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8E8CB7EEEB820&compId=IXXH30N65B4D1.pdf?ci_sign=c2ff94212e6ba280141b1eba1a8adcae86004281
IXXH30N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 30A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 65ns
Turn-off time: 206ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 146A
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IXYH30N65C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DA8FA49F63C7820&compId=IXYH(P)30N65C3.pdf?ci_sign=b199e109e3ab7a2153ecd617407198b811892fd9
IXYH30N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYH30N65C3H1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
IXYH30N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO247-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXYT30N65C3H1HV pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB8173C8A8ADE0C4&compId=IXY_30N65C3H1_HV.pdf?ci_sign=fe90d70eb5a4baa936f0659d92f838d1ceb9cd3a
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV
Type of transistor: IGBT
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Power dissipation: 270W
Case: TO268HV
Mounting: SMD
Gate charge: 44nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 118A
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IXTP36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTP36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO220AB
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+487.75 грн
10+274.30 грн
50+269.52 грн
В кошику  од. на суму  грн.
IXTR36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA02959DD0F78BF&compId=IXTR36P15P.pdf?ci_sign=7d9e4cf04ef12fee99949599ef3d6caa0088dafd
IXTR36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -22A; 150W; 150ns
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -22A
Power dissipation: 150W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 150ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+428.50 грн
3+351.65 грн
10+315.76 грн
30+295.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTA36P15P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO263
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
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IXTH36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTH36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO247-3
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
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IXTQ36P15P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA025489909D8BF&compId=IXT_36P15P.pdf?ci_sign=43e84b0c7625b0bc77fce7d732308fb491cdfed2
IXTQ36P15P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -150V; -36A; 300W; TO3P
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -36A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 55nC
Reverse recovery time: 228ns
товару немає в наявності
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MCC95-08io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED7B6E42C460A854A18&compId=MCC95-08io1B.pdf?ci_sign=ff1205aa795a501d5105af34eae2c48f9ea0609a pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-08io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 116A; TO240AA; Ufmax: 1.5V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.5V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2921.37 грн
3+2533.29 грн
10+2260.58 грн
В кошику  од. на суму  грн.
IXFH26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFH26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 26A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Technology: HiPerFET™; Polar3™
на замовлення 406 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+498.92 грн
5+389.92 грн
10+351.65 грн
В кошику  од. на суму  грн.
IXFH26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F4D820&compId=IXFH26N50P.pdf?ci_sign=d5eff1cf7d858618cda3bc4dde50d0892b2bdfa0
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+458.56 грн
10+351.65 грн
В кошику  од. на суму  грн.
IXTQ26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTQ26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO3P; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
на замовлення 211 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+437.95 грн
3+373.97 грн
10+324.54 грн
30+320.55 грн
В кошику  од. на суму  грн.
IXFA26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFA26N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO263
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 74 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+135.68 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFQ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFQ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO3P
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFJ26N50P3 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BAB693B12D7660C4&compId=IXFJ26N50P3.pdf?ci_sign=5ef1ecd6bc543a0395eb4820b9ef6d4f9818ecfb
IXFJ26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 14A; Idm: 78A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 180W
Case: ISO247™
On-state resistance: 0.295Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±30V
Pulsed drain current: 78A
Technology: HiPerFET™; Polar3™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT26N50P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC6476E5667820&compId=IXTQ(T%2CV)26N50P_S.pdf?ci_sign=05792dbff65769b8475857717b66702fd485dd9b
IXTT26N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.23Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC1009NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75020C7&compId=CPC1009N.pdf?ci_sign=f40f58f0e387932488df77283d620ba8e67b04b1
CPC1009NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Switched voltage: max. 100V AC; max. 100V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
On-state resistance: 8Ω
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
IXFQ28N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285A2A90AE15820&compId=IXFH(Q)28N60P3.pdf?ci_sign=0f34ebb36ef205574a8cc03b1e646bbbf9a5d93c
IXFQ28N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 28A; 695W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 695W
Case: TO3P
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
MCMA110P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
OMA160S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
OMA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
OMA160STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4949C2699C0C7&compId=OMA160.pdf?ci_sign=81480a08d275770b533880aac2266f2ea5be6c1b
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
В кошику  од. на суму  грн.
CPC1393GRTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Mounting: SMT
Case: DIP4
Operating temperature: -40...85°C
Kind of output: MOSFET
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Max. operating current: 90mA
On-state resistance: 50Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 5kV
Type of relay: solid state
Manufacturer series: OptoMOS
Contacts configuration: SPST-NO
Body dimensions: 4.57x6.35x3.3mm
товару немає в наявності
В кошику  од. на суму  грн.
LAA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+368.39 грн
10+299.02 грн
250+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339892080C7&compId=LAA100L.pdf?ci_sign=133833099cee8dee4dfa302627eb4b749f2b8824
LAA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+300.55 грн
50+240.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+296.26 грн
50+180.21 грн
250+144.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100L pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14
LCA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: THT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+307.42 грн
50+186.59 грн
250+150.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF00E0C7&compId=LCA100.pdf?ci_sign=b6a13f254b82ed80bf7e6532564a0f3bc7f7be17
LCA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 120 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+206.09 грн
50+175.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCA100LS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49442FF0260C7&compId=LCA100L.pdf?ci_sign=2944af23bbc5cad7dadbd037e13bc9d41be0ab14
LCA100LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Operating temperature: -40...85°C
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 25Ω
Manufacturer series: OptoMOS
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 82 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+224.13 грн
10+167.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LAA100S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49339891EA0C7&compId=LAA100.pdf?ci_sign=0aec29399b4e4aefd547e478bdb260a5ca7e1c58
LAA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x3.3mm
Max. operating current: 120mA
Control current max.: 50mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.76 грн
50+300.61 грн
В кошику  од. на суму  грн.
DSEI60-02A description pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD571E80678D8BF&compId=DSEI60-02A.pdf?ci_sign=a0fb9e8e737a89169c2b9a3753e0abe4ec11b12a
DSEI60-02A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 69A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 540A
Case: TO247-2
Max. forward voltage: 0.88V
Power dissipation: 150W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+446.53 грн
3+393.91 грн
10+342.08 грн
30+314.97 грн
В кошику  од. на суму  грн.
DSEI120-12A description pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B98284067443E143&compId=dsei120-12a.pdf?ci_sign=6a60535cc3c98501893d4b09a81381b32c83ed3d
DSEI120-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 109A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 244 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+812.35 грн
5+697.71 грн
В кошику  од. на суму  грн.
DSEI120-12AZ-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCB4B274AB88A0C4&compId=DSEI120-12AZ.pdf?ci_sign=05a92d3aa13572b2603654c465e7fd024cf02c7a
DSEI120-12AZ-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 109A; 40ns; TO268AAHV; Ufmax: 1.55V
Power dissipation: 357W
Case: TO268AAHV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 40ns
Max. forward voltage: 1.55V
Max. forward impulse current: 540A
Load current: 109A
Max. off-state voltage: 1.2kV
Technology: FRED
Semiconductor structure: single diode
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+927.42 грн
3+791.00 грн
10+701.70 грн
В кошику  од. на суму  грн.
DSEI2X61-10B pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23B903C5855EA&compId=DSEI2X61-10B.pdf?ci_sign=110b54c00102682d2e78134265b1372d8849911a
DSEI2X61-10B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. load current: 60A
Max. forward impulse current: 540A
Load current: 60A x2
Max. off-state voltage: 1kV
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N30P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD4792F693820&compId=IXFK(X)120N30P3.pdf?ci_sign=6c727e8884ef3f66572a5b3f0eace2ea8daa052b
IXFK120N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 1130W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 27mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 1.13kW
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N25P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BA9FC6E4A3B820&compId=IXFK(X)120N25P.pdf?ci_sign=3134161775411c290289e374cd33f69b9f8de3e4
IXFK120N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 700W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 185nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 700W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXYR100N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD62412DB8F820&compId=IXYR100N120C3.pdf?ci_sign=de30631e4fffbf2b67eb31519229856a9b8f4584
IXYR100N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 56A; 484W; PLUS247™
Mounting: THT
Turn-on time: 143ns
Gate charge: 260nC
Turn-off time: 271ns
Case: PLUS247™
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 56A
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 450A
Power dissipation: 484W
Kind of package: tube
Collector-emitter voltage: 1.2kV
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MCMA140PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80B4CE2C84A0C4&compId=MCMA140PD1200TB.pdf?ci_sign=012f7d812458ee72f1d124319d295e2f227a1db6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Case: TO240AA
Mechanical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.28V
Threshold on-voltage: 0.85V
Load current: 140A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.2kV
Max. load current: 220A
Kind of package: bulk
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MCMA1400E1600CD
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.6kV; 1.1kA; ComPack; screw
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.6kV
Load current: 1.1kA
Case: ComPack
Max. forward voltage: 1.43V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 600/800mA
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MCMA140P1800TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MDMA1400C1600CC pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83B65ED57A80C4&compId=MDMA1400C1600CC.pdf?ci_sign=3538e579689c92360b3215fffe2eb97c10f13c06
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 700Ax2; ComPack
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 700A x2
Case: ComPack
Max. forward voltage: 1.05V
Max. forward impulse current: 20kA
Electrical mounting: screw
Mechanical mounting: screw
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MCMA140P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1400TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
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MCMA140P1600TA-NI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF91B43CE06B7F40D6&compId=MCMA140P1600TA-NI.pdf?ci_sign=70902de132a96e720046b3fc07ec5015139e7f48 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 140A; Ifmax: 220A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.04kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Gate current: 150/200mA
Max. load current: 220A
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MDMA140P1200TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB833CF4489620C4&compId=MDMA140P1200TG.pdf?ci_sign=c9764fbcb017bbcc0b9a34085463d33e10f3bff4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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MDMA140P1600TG pVersion=0046&contRep=ZT&docId=005056AB82531EE98C88667E205598BF&compId=MDMA140P1600TG.pdf?ci_sign=3579c69530a8903c3dd7c83b6ffeba86cd59c752 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 140A
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MDMA140P1800TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB83404331BA00C4&compId=MDMA140P1800TG.pdf?ci_sign=67d7f1ef6eef7ae6c8809f4eb55eeafca3d9171d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.11V
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Mechanical mounting: screw
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IXTA24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTA24N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 390W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO263
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
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IXTH24N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE993DC5FF44FC238BF&compId=IXT_24N65X2.pdf?ci_sign=ca1ded67daf9910d4f25da90b1a96f8fc87d8744
IXTH24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Technology: X2-Class
Reverse recovery time: 390ns
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IXTY18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTY18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
на замовлення 78 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+279.94 грн
10+158.68 грн
Мінімальне замовлення: 2
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IXTA18P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA09340E5AD58BF&compId=IXT_18P10T.pdf?ci_sign=af2eea40a1c7a689ec6646ea661f0ab19498cc5b
IXTA18P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -18A; 83W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Reverse recovery time: 62ns
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IXFK420N10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA57BFF6D4A18BF&compId=IXFK420N10T_IXFX420N10T.pdf?ci_sign=f703b8f2c268b8e9ba07cd2c3e4e8ce0b331312c
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Reverse recovery time: 140ns
Gate charge: 670nC
On-state resistance: 2.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Kind of channel: enhancement
Case: TO264
Technology: GigaMOS™; HiPerFET™; Trench™
Polarisation: unipolar
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1210.80 грн
5+957.66 грн
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CPC1301GRTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDA9184E963945960C4&compId=CPC1301G.pdf?ci_sign=702b0def7552ac79a26102b9cdca77dc60c0820e
CPC1301GRTR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 5kV; Uce: 350V; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 5kV
CTR@If: 1000-8000%@1mA
Collector-emitter voltage: 350V
Turn-on time: 1µs
Turn-off time: 60µs
Slew rate: 0.25V/μs
Max. off-state voltage: 5V
Trigger current: 50mA
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IXFH18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFH18N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO247-3
Mounting: THT
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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IXFT18N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDFDA4ED557820&compId=IXFH(T)18N100Q3.pdf?ci_sign=82d246ace1e0649cdbbc2d29f3b3702b57bb27a8
IXFT18N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 18A; 830W; TO268
Mounting: SMD
Drain-source voltage: 1kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 90nC
On-state resistance: 0.66Ω
Drain current: 18A
Power dissipation: 830W
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CPC1014NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A752E0C7&compId=CPC1014N.pdf?ci_sign=a4c02ddb082d95fd63da7394eecc1088ee03122f
CPC1014NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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CPC1020NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75960C7&compId=CPC1020N.pdf?ci_sign=96f62284072c1fad21550f35e7a4e26a55ed445d
CPC1020NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1200mA; max.30VAC
Switched voltage: max. 30V AC; max. 30V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 1.2A
On-state resistance: 0.25Ω
Relay variant: current source
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CPC1025NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75AA0C7&compId=CPC1025N.pdf?ci_sign=262d69aeff98f8d3fd7ed3ae0d6bdac22dcb08db
CPC1025NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Switched voltage: max. 400V AC; max. 400V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Insulation voltage: 1.5kV
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 30Ω
Relay variant: 1-phase; current source
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