Продукція > IXYS > Всі товари виробника IXYS (16145) > Сторінка 270 з 270

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXFK210N30X3 IXFK210N30X3 IXYS IXF_210N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB210N30P3 IXFB210N30P3 IXYS IXFB210N30P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT220N20X3HV IXFT220N20X3HV IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Power dissipation: 960W
Gate charge: 204nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 6.2mΩ
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB132N50P3 IXFB132N50P3 IXYS IXFB132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFL132N50P3 IXFL132N50P3 IXYS IXFL132N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK210N30X3 IXF_210N30X3.pdf 300VProductBrief.pdf
IXFK210N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 190ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB210N30P3 IXFB210N30P3.pdf
IXFB210N30P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 210A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 210A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: THT
Gate charge: 268nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT220N20X3HV IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFT220N20X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268
Case: TO268
Mounting: SMD
Power dissipation: 960W
Gate charge: 204nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 220A
Kind of channel: enhancement
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 6.2mΩ
Reverse recovery time: 116ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB132N50P3 IXFB132N50P3.pdf
IXFB132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFL132N50P3 IXFL132N50P3.pdf
IXFL132N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.