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MCD250-12io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9kA
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MCD250-14io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9kA
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MCD250-16io1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9kA
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MCD250-18IO1 IXYS L086.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9kA
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IXTH02N450HV IXTH02N450HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Mounting: THT
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH80N65X2 IXFH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
1+914.44 грн
3+793.58 грн
5+732.42 грн
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IXFH80N65X2-4 IXFH80N65X2-4 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
1+1016.72 грн
5+847.51 грн
10+759.78 грн
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IXFK80N65X2 IXFK80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1677.19 грн
В кошику  од. на суму  грн.
IXTH80N65X2 IXTH80N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV IXFT80N65X2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXXH80N65B4D1 IXXH80N65B4D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXTT8P50 IXTT8P50 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E9CDAEE7EB8BF&compId=IXT_8P50.pdf?ci_sign=d6b8da636dc8394c03e72a7f3dcbe95461b9557a Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Drain-source voltage: -500V
Drain current: -8A
Reverse recovery time: 400ns
Gate charge: 130nC
On-state resistance: 1.2Ω
Gate-source voltage: ±20V
Power dissipation: 180W
Polarisation: unipolar
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+605.87 грн
3+496.59 грн
10+445.89 грн
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IXFN210N20P IXFN210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8DD4ECD3A9820&compId=IXFN210N20P.pdf?ci_sign=90a440251c814329b6b181c212ef3f018c2848cf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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UGE1112AY4 UGE1112AY4 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3B6C180C340C4&compId=UGE1112AY4.pdf?ci_sign=cae9bbd30d6c6d860a4759f7d894d24f362940b8 Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Features of semiconductor devices: high voltage
Fastening thread: M8
Type of diode: rectifying
Mounting: screw type
Max. forward voltage: 6.25V
Load current: 2/3.2/4.2A
Max. load current: 7A
Max. forward impulse current: 120A
Max. off-state voltage: 8kV
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+5183.25 грн
В кошику  од. на суму  грн.
VMO650-01F IXYS VMO650-01F.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXDD614SITR IXYS littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LCB110S LCB110S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
3+202.82 грн
Мінімальне замовлення: 3
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LCB110STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 IXTP220N04T2 IXYS IXTA(P)220N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
2+278.23 грн
10+197.99 грн
50+162.58 грн
Мінімальне замовлення: 2
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IXTA220N04T2 IXTA220N04T2 IXYS IXTA(P)220N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 IXTA120N04T2 IXYS IXTA(P)120N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 IXTA220N04T2-7 IXYS IXTA220N04T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 IXTH420N04T2 IXYS IXTH420N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV IXTT440N04T4HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 IXFH220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 IXFA220N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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MCD56-12io8B MCD56-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+2215.45 грн
3+1818.16 грн
10+1629.83 грн
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MMIX1F40N110P MMIX1F40N110P IXYS DS100431(MMIX1F40N110P).pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+4465.57 грн
3+3663.69 грн
10+3290.24 грн
20+3288.63 грн
В кошику  од. на суму  грн.
MMIX2F60N50P3
+1
 		MMIX2F60N50P3 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+2884.59 грн
3+2363.05 грн
10+2124.81 грн
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IXTP28P065T IXTP28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
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IXTA28P065T IXTA28P065T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
3+214.09 грн
10+159.36 грн
50+132.80 грн
Мінімальне замовлення: 3
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MDMA360UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA210UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA280UB1600PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MCC56-14io1B MCC56-14io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+2172.11 грн
10+1778.72 грн
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MCC56-14io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTY1R6N100D2 IXTY1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
на замовлення 372 шт:
термін постачання 21-30 дні (днів)
2+282.57 грн
5+203.63 грн
10+176.26 грн
25+148.09 грн
70+146.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 IXTP1R6N100D2 IXYS IXTA(P,Y)1R6N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
2+266.96 грн
10+217.31 грн
50+158.56 грн
100+140.85 грн
Мінімальне замовлення: 2
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IXTA1R6N100D2 IXTA1R6N100D2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV IXTA1R6N100D2HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
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MEK95-06DA MEK95-06DA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+2046.43 грн
3+1798.85 грн
5+1674.09 грн
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IXFK102N30P IXFK102N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1122.46 грн
В кошику  од. на суму  грн.
DSEC60-06A DSEC60-06A IXYS Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEC60-06B DSEC60-06B IXYS Littelfuse-Power-Semiconductors-DSEC60-06B-Datasheet?assetguid=b53129d0-1e05-4d24-9f36-08dffe109f5e Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
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DSEC60-12A DSEC60-12A IXYS Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTK140N30P IXTK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXFK140N25T IXFK140N25T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE9612BF9D820&compId=IXFK(X)140N25T.pdf?ci_sign=d001479cc13bc4a4e1385c15ba37bc156335595f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXYK140N90C3 IXYK140N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
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IXTH64N65X IXTH64N65X IXYS IXTH64N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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CPC1777J CPC1777J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75F00C7&compId=CPC1777.pdf?ci_sign=55f0bc911dcb7d90357508b2f81c34a9be0058e7 Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
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CPC1779J CPC1779J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC76040C7&compId=CPC1779.pdf?ci_sign=a98187da5f213bfc3a43f1f9a372c17ef8570ead Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
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IXTQ82N25P IXTQ82N25P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E5ACBC3F3E27&compId=IXTK82N25P-DTE.pdf?ci_sign=2d80fbef81a4d311cac049c9dcb145bc3406bb27 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
1+586.80 грн
10+406.45 грн
30+382.31 грн
В кошику  од. на суму  грн.
IXTP1N120P IXTP1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTA1N120P IXTA1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTH62N65X2 IXTH62N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
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MCD250-12io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 9kA
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MCD250-14io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 9kA
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MCD250-16io1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9kA
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MCD250-18IO1 L086.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 287Ax2; W102; Ufmax: 1.36V; bulk
Kind of package: bulk
Electrical mounting: FASTON connectors; screw
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Case: W102
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.36V
Load current: 287A x2
Max. load current: 450A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 9kA
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IXTH02N450HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B91799820&compId=IXTH02N450HV.pdf?ci_sign=95856f459aeb36e578257aa155b9eeb989e13775
IXTH02N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Mounting: THT
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
Case: TO247HV
Kind of package: tube
Polarisation: unipolar
On-state resistance: 625Ω
Drain current: 0.2A
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+914.44 грн
3+793.58 грн
5+732.42 грн
В кошику  од. на суму  грн.
IXFH80N65X2-4 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5825B99978BF&compId=IXFH80N65X2-4.pdf?ci_sign=e1124f754bcfef97bf067a342d7350d292757c2c
IXFH80N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-4
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-4
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1016.72 грн
5+847.51 грн
10+759.78 грн
В кошику  од. на суму  грн.
IXFK80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A86DDE557C98BF&compId=IXF_80N65X2.pdf?ci_sign=09568d814d0e64a14a486ffb7ff44f5c27bd7a3c
IXFK80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 80A; 890W; TO264P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO264P
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Features of semiconductor devices: ultra junction x-class
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1677.19 грн
В кошику  од. на суму  грн.
IXTH80N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE995BB1FA4137F58BF&compId=IXTH80N65X2.pdf?ci_sign=d8bfcad20b59804a9aa6f35033565e0055cc9678
IXTH80N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 465ns
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IXFT80N65X2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEB5DDDF247B8BF&compId=IXFT80N65X2HV.pdf?ci_sign=8483671aa3976023c370bf7e90b7e5ebca15d53c
IXFT80N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 80A; 890W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 80A
Power dissipation: 890W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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IXXH80N65B4D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE7DFB6358BD820&compId=IXXH80N65B4D1.pdf?ci_sign=5b6961bb362942b072eeea4395a0b19d8d0c5341
IXXH80N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 125ns
Turn-off time: 222ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXXH80N65B4H1 pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA3648FD9178BF&compId=IXXH80N65B4H1.pdf?ci_sign=a2c8e0ac4e56ecc4129b580ddf983a551d75c6ef
IXXH80N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
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IXTT8P50 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E9CDAEE7EB8BF&compId=IXT_8P50.pdf?ci_sign=d6b8da636dc8394c03e72a7f3dcbe95461b9557a
IXTT8P50
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -8A; 180W; TO268; 400ns
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: TO268
Kind of package: tube
Drain-source voltage: -500V
Drain current: -8A
Reverse recovery time: 400ns
Gate charge: 130nC
On-state resistance: 1.2Ω
Gate-source voltage: ±20V
Power dissipation: 180W
Polarisation: unipolar
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+605.87 грн
3+496.59 грн
10+445.89 грн
В кошику  од. на суму  грн.
IXFN210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF8DD4ECD3A9820&compId=IXFN210N20P.pdf?ci_sign=90a440251c814329b6b181c212ef3f018c2848cf
IXFN210N20P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 188A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 188A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 10.5mΩ
Pulsed drain current: 600A
Power dissipation: 1.07kW
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 255nC
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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UGE1112AY4 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC3B6C180C340C4&compId=UGE1112AY4.pdf?ci_sign=cae9bbd30d6c6d860a4759f7d894d24f362940b8
UGE1112AY4
Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 8kV; 2/3.2/4.2A; 7A; 2.5kW; Ø55x23mm; Ifsm: 120A
Semiconductor structure: single diode
Case: Ø55x23mm
Power dissipation: 2.5kW
Features of semiconductor devices: high voltage
Fastening thread: M8
Type of diode: rectifying
Mounting: screw type
Max. forward voltage: 6.25V
Load current: 2/3.2/4.2A
Max. load current: 7A
Max. forward impulse current: 120A
Max. off-state voltage: 8kV
Kind of package: bulk
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5183.25 грн
В кошику  од. на суму  грн.
VMO650-01F VMO650-01F.pdf
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 690A; Y3-DCB; Idm: 2.78kA; 2.5kW
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 690A
Case: Y3-DCB
Electrical mounting: FASTON connectors; screw
Polarisation: unipolar
On-state resistance: 1.8mΩ
Pulsed drain current: 2.78kA
Power dissipation: 2.5kW
Technology: HiPerFET™
Kind of channel: enhancement
Gate charge: 2.3µC
Reverse recovery time: 300ns
Gate-source voltage: ±20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXDD614SITR littelfuse-integrated-circuits-ixd-614-datasheet?assetguid=e66ef830-2f72-45bc-86ab-607383f42514
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
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LCB110S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+202.82 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
LCB110STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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MCMA65PD1200TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8110BB5E66A0C4&compId=MCMA65PD1200TB.pdf?ci_sign=64ffce97cdb3b2a964512360d5b5ffa53cffe136 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA65PD1600TB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD8116D7636D20C4&compId=MCMA65PD1600TB.pdf?ci_sign=1a113da424381882bdb556bade45ffad1327a809 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 65A; TO240AA; Ufmax: 1.17V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 65A
Case: TO240AA
Max. forward voltage: 1.17V
Max. forward impulse current: 1.15kA
Gate current: 95/200mA
Electrical mounting: FASTON connectors; screw
Max. load current: 105A
Threshold on-voltage: 0.85V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCMA265PD1600KB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BD80F885DD90E0C4&compId=MCMA265PD1600KB.pdf?ci_sign=698e18d64fb8cc1719c81bb85ab5529b83241ce2
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Gate current: 150/220mA
Electrical mounting: screw
Max. load current: 421A
Threshold on-voltage: 0.8V
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXTP220N04T2 IXTA(P)220N04T2.pdf
IXTP220N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO220AB; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+278.23 грн
10+197.99 грн
50+162.58 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA220N04T2 IXTA(P)220N04T2.pdf
IXTA220N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA120N04T2 IXTA(P)120N04T2.pdf
IXTA120N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO263; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO263
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA220N04T2-7 IXTA220N04T2-7.pdf
IXTA220N04T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 220A; 360W; TO263-7; 45ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 220A
Power dissipation: 360W
Case: TO263-7
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 45ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH420N04T2 IXTH420N04T2.pdf
IXTH420N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 420A; 935W; TO247-3; 74ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 420A
Power dissipation: 935W
Case: TO247-3
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 74ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 6.1mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 35ns
Features of semiconductor devices: thrench gate power mosfet
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IXTT440N04T4HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F14DF820&compId=IXTT440N04T4HV.pdf?ci_sign=e183a6537a67fc5446061602a4901de288dda214
IXTT440N04T4HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 440A; 940W; TO268HV; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 440A
Power dissipation: 940W
Case: TO268HV
On-state resistance: 1.25mΩ
Mounting: SMD
Gate charge: 480nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 72ns
Features of semiconductor devices: thrench gate power mosfet
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IXFH220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFH220N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247-3; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
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IXFA220N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A425AF34FCDE27&compId=IXxx220N06T3-DTE.pdf?ci_sign=85c9334b17346a7a0e037b9d25698b762f112045
IXFA220N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO263; 38ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; TrenchT3™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 220A
Power dissipation: 440W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 38ns
товару немає в наявності
В кошику  од. на суму  грн.
MCD56-12io8B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7A01AAE7DDC3E27&compId=MCD56-12IO8B-DTE.pdf?ci_sign=a491116a91803ed0b1e3265398a2b9e8dd527589 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-12io8B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. forward impulse current: 1.5kA
Max. load current: 100A
Kind of package: bulk
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2215.45 грн
3+1818.16 грн
10+1629.83 грн
В кошику  од. на суму  грн.
MMIX1F40N110P DS100431(MMIX1F40N110P).pdf
MMIX1F40N110P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.1kV; 24A; Idm: 100A; 500W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.1kV
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 500W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 310nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4465.57 грн
3+3663.69 грн
10+3290.24 грн
20+3288.63 грн
В кошику  од. на суму  грн.
MMIX2F60N50P3 littelfuse_discrete_mosfets_smpd_packages_mmix2f60n50p3_datasheet.pdf.pdf
MMIX2F60N50P3
+1
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2884.59 грн
3+2363.05 грн
10+2124.81 грн
В кошику  од. на суму  грн.
IXTP28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTP28P065T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO220AB
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
товару немає в наявності
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IXTA28P065T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA0B82DC4A798BF&compId=IXT_28P065T.pdf?ci_sign=f1bef680ca9cf6e62c0af10fbe84210c2fa0873f
IXTA28P065T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -28A; 83W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -65V
Drain current: -28A
Power dissipation: 83W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 31ns
на замовлення 198 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+214.09 грн
10+159.36 грн
50+132.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MDMA360UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 175A
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA210UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 84A
Pulsed collector current: 225A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
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MDMA280UB1600PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 300A
Max. off-state voltage: 1.2kV
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Semiconductor structure: diode/transistor
Case: E2-Pack
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
товару немає в наявності
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MCC56-14io1B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC56-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2172.11 грн
10+1778.72 грн
В кошику  од. на суму  грн.
MCC56-14io8B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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IXTY1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTY1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
на замовлення 372 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+282.57 грн
5+203.63 грн
10+176.26 грн
25+148.09 грн
70+146.48 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R6N100D2 IXTA(P,Y)1R6N100D2.pdf
IXTP1R6N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 100W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Gate charge: 645nC
On-state resistance: 10Ω
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 1kV
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+266.96 грн
10+217.31 грн
50+158.56 грн
100+140.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA1R6N100D2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD988597E13820&compId=IXTA(P%2CY)1R6N100D2.pdf?ci_sign=ce59496fe47080cde7fbbe82a0045017cf12b9be
IXTA1R6N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 1.6A; 100W; TO263; 11ns
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 11ns
Gate charge: 645nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
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IXTA1R6N100D2HV pVersion=0046&contRep=ZT&docId=005056AB82531EE995A9E51B522E58BF&compId=IXTA1R6N100D2HV.pdf?ci_sign=55d26c1e82b4e332d5c0e06370e2b4aeba32cd94
IXTA1R6N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263
Mounting: SMD
Case: TO263
Kind of package: tube
Polarisation: unipolar
Reverse recovery time: 970ns
Gate charge: 27nC
Drain current: 1.6A
On-state resistance: 10Ω
Gate-source voltage: ±20V
Power dissipation: 100W
Drain-source voltage: 1kV
Kind of channel: depletion
Type of transistor: N-MOSFET
Technology: Polar™
товару немає в наявності
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MEK95-06DA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MEK95-06DA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common cathode; 600V; If: 95A; TO240AA; Ufmax: 1.36V
Type of semiconductor module: diode
Semiconductor structure: common cathode
Max. off-state voltage: 0.6kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.36V
Max. forward impulse current: 1.2kA
Electrical mounting: screw
Mechanical mounting: screw
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2046.43 грн
3+1798.85 грн
5+1674.09 грн
В кошику  од. на суму  грн.
IXFK102N30P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F945957269820&compId=IXFK102N30P.pdf?ci_sign=c151da4b07d5bf21f7c6dd2fd7ca83cee205a948
IXFK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 102A; 700W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 102A
Gate charge: 224nC
On-state resistance: 33mΩ
Power dissipation: 700W
Kind of package: tube
Case: TO264
Kind of channel: enhancement
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1122.46 грн
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DSEC60-06A Littelfuse-Power-Semiconductors-DSEC60-06A-Datasheet?assetguid=6df7d9d0-4860-43a3-b1da-df3589182aec
DSEC60-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 1.6V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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DSEC60-06B Littelfuse-Power-Semiconductors-DSEC60-06B-Datasheet?assetguid=b53129d0-1e05-4d24-9f36-08dffe109f5e
DSEC60-06B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 250A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO247-3
Max. forward voltage: 2.51V
Power dissipation: 165W
Reverse recovery time: 30ns
Technology: HiPerFRED™
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DSEC60-12A Littelfuse-Power-Semiconductors-DSEC60-12A-Datasheet?assetguid=209f6ea6-9eb4-4faf-a3e4-37cae54527a2
DSEC60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; tube; Ifsm: 200A; TO247-3; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTK140N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF917BA10D161E27&compId=IXTK140N30P-DTE.pdf?ci_sign=0539e3c51f0d1e46075142cd98d33da5a34d86f9
IXTK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 185nC
On-state resistance: 0.24Ω
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXFK140N25T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDE9612BF9D820&compId=IXFK(X)140N25T.pdf?ci_sign=d001479cc13bc4a4e1385c15ba37bc156335595f
IXFK140N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 140A; 960W; TO264
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 17mΩ
Drain-source voltage: 250V
Power dissipation: 960W
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
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IXYK140N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAB36CF0F167820&compId=IXYK(X)140N90C3.pdf?ci_sign=ff461166cb57c441f4d71986b43376cd7e351146
IXYK140N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 140A; 1.63kW; TO264
Mounting: THT
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 122ns
Gate charge: 330nC
Turn-off time: 0.3µs
Gate-emitter voltage: ±20V
Collector current: 140A
Power dissipation: 1.63kW
Pulsed collector current: 840A
Collector-emitter voltage: 900V
Case: TO264
Kind of package: tube
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IXTH64N65X IXTH64N65X.pdf
IXTH64N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 64A; 890W; TO247-3; 450ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 64A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 51mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 450ns
Features of semiconductor devices: ultra junction x-class
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CPC1777J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC75F00C7&compId=CPC1777.pdf?ci_sign=55f0bc911dcb7d90357508b2f81c34a9be0058e7
CPC1777J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; i4-pac; OptoMOS; 0.5Ω
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Turn-on time: 20ms
Control current max.: 50mA
On-state resistance: 0.5Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: i4-pac
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CPC1779J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931BC76040C7&compId=CPC1779.pdf?ci_sign=a98187da5f213bfc3a43f1f9a372c17ef8570ead
CPC1779J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 2000mA; max.600VDC; THT; ISOPLUS264™; OptoMOS
Relay variant: current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Control current max.: 100mA
On-state resistance: 0.4Ω
Max. operating current: 2A
Switched voltage: max. 600V DC
Insulation voltage: 2.5kV
Case: ISOPLUS264™
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IXTQ82N25P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90E5ACBC3F3E27&compId=IXTK82N25P-DTE.pdf?ci_sign=2d80fbef81a4d311cac049c9dcb145bc3406bb27
IXTQ82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 169 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+586.80 грн
10+406.45 грн
30+382.31 грн
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IXTP1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTP1N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO220AB; 900ns
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTA1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTA1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns
Kind of package: tube
Case: TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
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IXTH62N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F971B4952B820&compId=IXTH62N65X2.pdf?ci_sign=36d0efac15306422ef53e7207db6fd4a2fefb0ff
IXTH62N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Features of semiconductor devices: ultra junction x-class
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