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IXTP80N075L2 IXTP80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
1+549.39 грн
3+372.10 грн
7+351.47 грн
В кошику  од. на суму  грн.
IXTH80N075L2 IXTH80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
1+612.61 грн
3+443.50 грн
6+419.70 грн
120+403.04 грн
В кошику  од. на суму  грн.
IXTA80N075L2 IXTA80N075L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
товару немає в наявності
В кошику  од. на суму  грн.
DSA15I45PA DSA15I45PA IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
на замовлення 587 шт:
термін постачання 21-30 дні (днів)
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DSA15IM45IB DSA15IM45IB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
на замовлення 546 шт:
термін постачання 21-30 дні (днів)
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IXFK66N85X IXFK66N85X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
DPG60B600LB-TRR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
товару немає в наявності
В кошику  од. на суму  грн.
DPG60B600LB-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
товару немає в наявності
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IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
4+113.64 грн
10+64.42 грн
25+54.35 грн
30+31.81 грн
81+30.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTT500N04T2 IXTT500N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IX4426N IX4426N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1130 шт:
термін постачання 21-30 дні (днів)
6+82.88 грн
10+54.74 грн
23+42.05 грн
61+39.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426MTR IX4426MTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
5+95.69 грн
10+61.09 грн
20+49.19 грн
53+46.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
В кошику  од. на суму  грн.
IXBT12N300HV IXBT12N300HV IXYS littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
товару немає в наявності
В кошику  од. на суму  грн.
IX9907N IX9907N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 493 шт:
термін постачання 21-30 дні (днів)
13+33.32 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N IX9908N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
9+49.56 грн
10+41.26 грн
25+36.50 грн
30+31.74 грн
80+30.15 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC1966B CPC1966B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
2+341.76 грн
4+253.88 грн
10+239.60 грн
25+235.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1961G CPC1961G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
2+215.31 грн
9+114.25 грн
23+107.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1943G CPC1943G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
1+550.24 грн
3+341.15 грн
8+322.91 грн
50+312.59 грн
100+310.21 грн
В кошику  од. на суму  грн.
CPC1943GS CPC1943GS IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4 Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
1+464.80 грн
3+341.15 грн
В кошику  од. на суму  грн.
CPC1916Y CPC1916Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
1+820.24 грн
3+353.06 грн
8+334.01 грн
В кошику  од. на суму  грн.
CPC1967J CPC1967J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
1+1194.47 грн
3+1048.85 грн
25+1016.32 грн
В кошику  од. на суму  грн.
IXTQ460P2 IXTQ460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: Polar2™
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
1+439.17 грн
4+295.14 грн
9+279.27 грн
30+273.72 грн
В кошику  од. на суму  грн.
IXTP260N055T2 IXTP260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
2+412.68 грн
3+358.61 грн
4+304.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P IXTK32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B6EE82DC4748&compId=IXTK32P60P.pdf?ci_sign=6d1ae1f0adba3492c1b4312d0bc082adcccb9529 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
1+1262.82 грн
3+1109.15 грн
10+1080.59 грн
25+1065.51 грн
В кошику  од. на суму  грн.
IXTT16P60P IXTT16P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
Technology: PolarP™
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
1+1035.55 грн
2+687.86 грн
4+650.57 грн
30+625.19 грн
В кошику  од. на суму  грн.
IXTN60N50L2 IXTN60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9309137629820&compId=IXTN60N50L2.pdf?ci_sign=15f12dac8ab19059b2614dc81037575359837d16 Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Technology: Linear L2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTN600N04T2 IXTN600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4 Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Pulsed drain current: 1.8kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 590nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTX60N50L2 IXTX60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
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IXTK60N50L2 IXTK60N50L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTK600N04T2 IXTK600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTQ60N20L2 IXTQ60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTT60N20L2 IXTT60N20L2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTX600N04T2 IXTX600N04T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP460P2 IXTP460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTA260N055T2 IXTA260N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTA460P2 IXTA460P2 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTT360N055T2 IXTT360N055T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
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IXTR32P60P IXTR32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5C3336AD18BF&compId=IXTR32P60P.pdf?ci_sign=eed072ed973f6a65dd9ee646ce6abdf7069fea33 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -18A
Power dissipation: 310W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
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IXTN32P60P IXTN32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Pulsed drain current: -96A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Gate charge: 196nC
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTT10P60 IXTT10P60 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -10A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXTX32P60P IXTX32P60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5766289BB8BF&compId=IXT_32P60P.pdf?ci_sign=e2aa7b6252b406ed32c74c9a7a20c4aba482499f Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
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IXFR80N50Q3 IXFR80N50Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+2275.30 грн
2+1997.74 грн
В кошику  од. на суму  грн.
IXFH60N50P3 IXFH60N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A860C1049498BF&compId=IXF_60N50P3.pdf?ci_sign=e076b3a745c1d0793acafb7d1dc93009289b7b73 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
1+662.17 грн
2+510.14 грн
5+509.35 грн
6+481.58 грн
30+464.92 грн
В кошику  од. на суму  грн.
MCC26-12io8B MCC26-12io8B IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1625.09 грн
2+1426.50 грн
В кошику  од. на суму  грн.
MCC95-18io1B MCC95-18io1B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2671.75 грн
В кошику  од. на суму  грн.
IXGH72N60C3 IXGH72N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
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CS20-22MOF1 CS20-22MOF1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
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DSDI60-16A DSDI60-16A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+848.43 грн
2+708.49 грн
4+670.41 грн
5+669.61 грн
10+654.54 грн
В кошику  од. на суму  грн.
IXFB210N20P IXFB210N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Polarisation: unipolar
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 210A
Drain-source voltage: 200V
Gate charge: 255nC
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Kind of package: tube
товару немає в наявності
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LDA201 LDA201 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
14+30.76 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IXTH04N300P3HV IXTH04N300P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ52P10P IXTQ52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 193 шт:
термін постачання 21-30 дні (днів)
1+518.63 грн
3+331.63 грн
8+313.39 грн
120+309.42 грн
В кошику  од. на суму  грн.
IXTA52P10P IXTA52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+552.80 грн
3+331.63 грн
8+313.39 грн
50+301.49 грн
В кошику  од. на суму  грн.
IXTH52P10P IXTH52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
1+625.43 грн
3+374.48 грн
7+353.85 грн
120+343.53 грн
В кошику  од. на суму  грн.
IXTK170P10P IXTK170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTT90P10P IXTT90P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTN170P10P IXTN170P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Technology: PolarP™
Mechanical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: -510A
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±30V
Power dissipation: 890W
Electrical mounting: screw
Case: SOT227B
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTP52P10P IXTP52P10P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97 Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTP80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTP80N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO220AB; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+549.39 грн
3+372.10 грн
7+351.47 грн
В кошику  од. на суму  грн.
IXTH80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTH80N075L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO247-3; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
на замовлення 275 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+612.61 грн
3+443.50 грн
6+419.70 грн
120+403.04 грн
В кошику  од. на суму  грн.
IXTA80N075L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D40C33743EF820&compId=IXTA(H%2CP)80N075L2.pdf?ci_sign=29f6107f9c0994d3b18d0f8e4dd316853db34889
IXTA80N075L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 357W; TO263; 160ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 357W
Case: TO263
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 160ns
товару немає в наявності
В кошику  од. на суму  грн.
DSA15I45PA pVersion=0046&contRep=ZT&docId=005056AB82531EE991C8E6C7B3F538BF&compId=DSA15I45PA.pdf?ci_sign=42a4764506b63c76dc332c69ee294d95e673cf87
DSA15I45PA
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 0.63V
Mounting: THT
Case: TO220AC
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
на замовлення 587 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
DSA15IM45IB pVersion=0046&contRep=ZT&docId=005056AB82531EE991C9044DB3B2F8BF&compId=DSA15IM45IB.pdf?ci_sign=d799d9985601cddeeb334e355aa21f9928a56a60
DSA15IM45IB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.63V; 85W
Mounting: THT
Case: TO262
Type of diode: Schottky rectifying
Power dissipation: 85W
Max. forward voltage: 0.63V
Load current: 15A
Max. off-state voltage: 45V
Max. forward impulse current: 340A
Semiconductor structure: single diode
Kind of package: tube
на замовлення 546 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.34 грн
17+24.04 грн
18+23.33 грн
50+22.61 грн
109+22.29 грн
250+21.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
IXFK66N85X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D45EA035953820&compId=IXFK(X)66N85X.pdf?ci_sign=e7c14aa32d84194501b260d23630935b53873b4a
IXFK66N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 66A; 1250W; TO264; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 66A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 250ns
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DPG60B600LB-TRR pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
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В кошику  од. на суму  грн.
DPG60B600LB-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41EDBAEAAC451B67620C7&compId=DPG60B600LB.pdf?ci_sign=73b1deca75d8f1c3863c312794ea1d3bf02daa95
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 60A; Ifsm: 250A
Technology: HiPerFRED™
Case: SMPD-B
Kind of package: tube
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 2.21V
Load current: 60A
Max. forward impulse current: 250A
Max. off-state voltage: 0.6kV
товару немає в наявності
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IX4310N
IX4310N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -2...2A
Number of channels: 2
Supply voltage: 5...24V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
на замовлення 1672 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.64 грн
10+64.42 грн
25+54.35 грн
30+31.81 грн
81+30.07 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTT500N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4EC341BB65820&compId=IXTH(T)500N04T2.pdf?ci_sign=fb6c11af8f98e6c971678d0a7c1e31c1713e7404
IXTT500N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 500A; 1000W; TO268; 84ns
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 500A
Reverse recovery time: 84ns
Gate charge: 405nC
On-state resistance: 1.6mΩ
Power dissipation: 1kW
Case: TO268
Kind of channel: enhancement
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IX4426N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1130 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+82.88 грн
10+54.74 грн
23+42.05 грн
61+39.67 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IX4426MTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4426MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Case: DFN8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...30V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+95.69 грн
10+61.09 грн
20+49.19 грн
53+46.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
товару немає в наявності
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IXBT12N300HV littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c
IXBT12N300HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
товару немає в наявності
В кошику  од. на суму  грн.
IX9907N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E7AAE9A4C80C4&compId=IX9907.pdf?ci_sign=1c528a18bc3dd6c5a1da43fa7fa252678bebf06f
IX9907N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 493 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.32 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IX9908N pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BA9E77F90511C0C4&compId=IX9908.pdf?ci_sign=7d97fd2db8aecb60afa1d2239646bb1a84c4bffd
IX9908N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 1.7A
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Output current: 1.7A
Mounting: SMD
Operating voltage: 650V DC
Kind of package: tube
Integrated circuit features: linear dimming; PWM
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+49.56 грн
10+41.26 грн
25+36.50 грн
30+31.74 грн
80+30.15 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
CPC1966B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81F80C7&compId=CPC1966B.pdf?ci_sign=ae60b2a886e2930432cd0111dbf22b9b7492df85
CPC1966B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.800VAC; 1-phase
Operating temperature: -40...85°C
Turn-on time: 20µs
Max. operating current: 3A
Body dimensions: 21.08x16.76x3.3mm
Control current max.: 50mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Insulation voltage: 5kV
Case: SO8
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 66 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+341.76 грн
4+253.88 грн
10+239.60 грн
25+235.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1961G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81A00C7&compId=CPC1961.pdf?ci_sign=8a6330b4874c9f3ab50e4bf711f14beab8a555df
CPC1961G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 250mA
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Switched voltage: max. 600V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP8
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 208 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+215.31 грн
9+114.25 грн
23+107.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1943G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 103 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+550.24 грн
3+341.15 грн
8+322.91 грн
50+312.59 грн
100+310.21 грн
В кошику  од. на суму  грн.
CPC1943GS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD81740C7&compId=CPC1943.pdf?ci_sign=a01e70cd2a1035fd2c83dd4b3dd11577a147baa4
CPC1943GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 0.5A
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
Case: DIP6
Switching method: zero voltage switching
Mounting: SMT
Type of relay: solid state
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+464.80 грн
3+341.15 грн
В кошику  од. на суму  грн.
CPC1916Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4D709785518BF&compId=CPC1916.pdf?ci_sign=9583ecfd8a4e7c236662a12baf386e32aa0b9f6b
CPC1916Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2500mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 2.5A
Turn-off time: 3ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.34Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 58 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+820.24 грн
3+353.06 грн
8+334.01 грн
В кошику  од. на суму  грн.
CPC1967J pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4931AD82480C7&compId=CPC1967.pdf?ci_sign=1a9a97aaffccad77bd5336d5a50b8c41367b0354
CPC1967J
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1350mA; max.400VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1350mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 0.85Ω
Switched voltage: max. 400V AC; max. 400V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 99 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1194.47 грн
3+1048.85 грн
25+1016.32 грн
В кошику  од. на суму  грн.
IXTQ460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTQ460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar2™; unipolar; 500V; 24A; 480W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: Polar2™
на замовлення 161 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+439.17 грн
4+295.14 грн
9+279.27 грн
30+273.72 грн
В кошику  од. на суму  грн.
IXTP260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTP260N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO220AB; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+412.68 грн
3+358.61 грн
4+304.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTK32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794B6EE82DC4748&compId=IXTK32P60P.pdf?ci_sign=6d1ae1f0adba3492c1b4312d0bc082adcccb9529
IXTK32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; TO264
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
на замовлення 273 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1262.82 грн
3+1109.15 грн
10+1080.59 грн
25+1065.51 грн
В кошику  од. на суму  грн.
IXTT16P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E619805AB38BF&compId=IXT_16P60P.pdf?ci_sign=0e81182102286b9c0016837af235ac11d15c7957
IXTT16P60P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -16A; 460W; TO268
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -16A
Power dissipation: 460W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 440ns
Technology: PolarP™
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1035.55 грн
2+687.86 грн
4+650.57 грн
30+625.19 грн
В кошику  од. на суму  грн.
IXTN60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9309137629820&compId=IXTN60N50L2.pdf?ci_sign=15f12dac8ab19059b2614dc81037575359837d16
IXTN60N50L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Technology: Linear L2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTN600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF5F55F2CE31820&compId=IXTN600N04T2.pdf?ci_sign=21248338ae2fa9deea23c6d6848e893366c6ced4
IXTN600N04T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 40V; 600A; SOT227B; screw; Idm: 1.8kA
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Pulsed drain current: 1.8kA
Power dissipation: 940W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 1.3mΩ
Gate charge: 590nC
Kind of channel: enhancement
Reverse recovery time: 100ns
Technology: GigaMOS™; TrenchT2™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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В кошику  од. на суму  грн.
IXTX60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTX60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTK60N50L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D47AEE6788F820&compId=IXTK(X)60N50L2.pdf?ci_sign=4c5a7a71f2100987403dfd7b97dea0f6fcb5dbf9
IXTK60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 980ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTK600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTK600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; TO264; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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IXTQ60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTQ60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO3P; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO3P
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
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В кошику  од. на суму  грн.
IXTT60N20L2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48B420A555820&compId=IXTH(T%2CQ)60N20L2.pdf?ci_sign=9511c8ae4df23ad4a63fbb7619d2375ceff89442
IXTT60N20L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO268; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 330ns
Features of semiconductor devices: linear power mosfet
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IXTX600N04T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D49FEAF5633820&compId=IXTK(X)600N04T2.pdf?ci_sign=31b642072eb49cef1a86e3e7413c5068bef4c432
IXTX600N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 600A; 1250W; PLUS247™; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 600A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 1.5mΩ
Mounting: THT
Gate charge: 590nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTP460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTP460P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO220AB; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTA260N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCAF933DD53820&compId=IXTA(P)260N055T2.pdf?ci_sign=7d74893cde6dc5f8997d0fa7ff9adc13d7fa48f1
IXTA260N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA260N055T2-7 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC815820&compId=IXTA260N055T2-7.pdf?ci_sign=20af502dc1bd984d39825892a1d6786d67df0a27
IXTA260N055T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 60ns
Features of semiconductor devices: thrench gate power mosfet
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IXTA460P2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C0B0D5903E469&compId=IXTQ460P2.pdf?ci_sign=66ba757660ab9fc6f012f9df9c2561c23345b3f6
IXTA460P2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 480W; TO263; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 480W
Case: TO263
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: standard power mosfet
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IXTT360N055T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CBF1C858E7B820&compId=IXTH(T)360N055T2.pdf?ci_sign=23fb805fbce6e75a57fc84bdd4dfce3194e210b5
IXTT360N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 360A; 935W; TO268; 78ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 360A
Power dissipation: 935W
Case: TO268
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 330nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 78ns
Features of semiconductor devices: thrench gate power mosfet
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IXTR32P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5C3336AD18BF&compId=IXTR32P60P.pdf?ci_sign=eed072ed973f6a65dd9ee646ce6abdf7069fea33
IXTR32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -18A; 310W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -18A
Power dissipation: 310W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.385Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
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IXTN32P60P pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949C94D6AA0748&compId=IXTN32P60P.pdf?ci_sign=035c5f108d26aae1df24efb3d52a2cd107ac837f
IXTN32P60P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -600V; -32A; SOT227B; screw; Idm: -96A
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Pulsed drain current: -96A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Gate charge: 196nC
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
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IXTT10P60 pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E678466B5B8BF&compId=IXT_10P60.pdf?ci_sign=1f66270f133ab710d995425d2a54122a9b741bbc
IXTT10P60
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -600V; -10A; 300W; TO268; 500ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -10A
Power dissipation: 300W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
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IXTX32P60P pVersion=0046&contRep=ZT&docId=005056AB82531EE98E9E5766289BB8BF&compId=IXT_32P60P.pdf?ci_sign=e2aa7b6252b406ed32c74c9a7a20c4aba482499f
IXTX32P60P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -600V; -32A; 890W; 480ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -600V
Drain current: -32A
Power dissipation: 890W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 480ns
Technology: PolarP™
товару немає в наявності
В кошику  од. на суму  грн.
IXFR80N50Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC611820&compId=IXFR80N50Q3.pdf?ci_sign=196a018cdeecf0092ac54030991190e895b55b65
IXFR80N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 50A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 50A
Power dissipation: 570W
Case: ISOPLUS247™
On-state resistance: 72mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2275.30 грн
2+1997.74 грн
В кошику  од. на суму  грн.
IXFH60N50P3 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A860C1049498BF&compId=IXF_60N50P3.pdf?ci_sign=e076b3a745c1d0793acafb7d1dc93009289b7b73
IXFH60N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 60A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 362 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+662.17 грн
2+510.14 грн
5+509.35 грн
6+481.58 грн
30+464.92 грн
В кошику  од. на суму  грн.
MCC26-12io8B pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD95514C92E50143&compId=MCC26-12io8B.pdf?ci_sign=035343a5848330b6e8f059b4ca7ab93c4c826646 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC26-12io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 27A; TO240AA; Ufmax: 1.27V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 0.44kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1625.09 грн
2+1426.50 грн
В кошику  од. на суму  грн.
MCC95-18io1B pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A99D66AD9C64BE27&compId=MCC95-18IO1B-DTE.pdf?ci_sign=76aa368a76aabe9775dd10afb8da54ce46bf6113 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCC95-18io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 116A; TO240AA; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 2.25kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2671.75 грн
В кошику  од. на суму  грн.
IXGH72N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFA8AE8E972D820&compId=IXGH72N60C3.pdf?ci_sign=e7439d07a94ee0168475277f41a96e4f84faad59
IXGH72N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 72A; 540W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 72A
Power dissipation: 540W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Turn-on time: 62ns
Turn-off time: 244ns
товару немає в наявності
В кошику  од. на суму  грн.
CS20-22MOF1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BDD65D23F377CA18&compId=CS20-22moF1.pdf?ci_sign=b0af0cfe7ddc5a60264d816efdb90ab3d73413df
CS20-22MOF1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 2.2kV; 18A; Igt: 250mA; ISOPLUS i4-pac™ x024c; THT; tube
Kind of package: tube
Mounting: THT
Case: ISOPLUS i4-pac™ x024c
Type of thyristor: thyristor
Gate current: 250mA
Load current: 18A
Max. forward impulse current: 200A
Max. off-state voltage: 2.2kV
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В кошику  од. на суму  грн.
DSDI60-16A pVersion=0046&contRep=ZT&docId=005056AB82531EE98AD54AADEAF918BF&compId=DSDI60.pdf?ci_sign=66c00a987b53d82961db2b8d5679ca1617d22433
DSDI60-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 60A; tube; Ifsm: 450A; TO247-2; 416W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO247-2
Max. forward voltage: 2.6V
Power dissipation: 416W
Reverse recovery time: 40ns
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+848.43 грн
2+708.49 грн
4+670.41 грн
5+669.61 грн
10+654.54 грн
В кошику  од. на суму  грн.
IXFB210N20P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39CBF820&compId=IXFB210N20P.pdf?ci_sign=45107975032c44e04f2a5e02350874bd4d821178
IXFB210N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Polarisation: unipolar
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Mounting: THT
Drain current: 210A
Drain-source voltage: 200V
Gate charge: 255nC
On-state resistance: 10.5mΩ
Power dissipation: 1.5kW
Kind of package: tube
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В кошику  од. на суму  грн.
LDA201 pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ABDD895F701EC&compId=LDA201.pdf?ci_sign=ea9bc7977b0278912611a4bb6621e7b18e8942eb
LDA201
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; 3.75kV; DIP8
Case: DIP8
Mounting: THT
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 7µs
Turn-off time: 20µs
Number of channels: 2
CTR@If: 33-1000%@1mA
Insulation voltage: 3.75kV
на замовлення 104 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+30.76 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
IXTH04N300P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F965B917AF820&compId=IXTH04N300P3HV.pdf?ci_sign=462da40c2776e8330cfe3a15d83a604a60b6a8ac
IXTH04N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 0.4A; 104W; TO247HV; 1.1us
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO247HV
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Gate charge: 13nC
Reverse recovery time: 1.1µs
Drain current: 0.4A
Power dissipation: 104W
On-state resistance: 190Ω
Drain-source voltage: 3kV
Kind of package: tube
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В кошику  од. на суму  грн.
IXTQ52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTQ52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO3P
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO3P
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 193 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+518.63 грн
3+331.63 грн
8+313.39 грн
120+309.42 грн
В кошику  од. на суму  грн.
IXTA52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTA52P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO263
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO263
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+552.80 грн
3+331.63 грн
8+313.39 грн
50+301.49 грн
В кошику  од. на суму  грн.
IXTH52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTH52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO247-3
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO247-3
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 149 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+625.43 грн
3+374.48 грн
7+353.85 грн
120+343.53 грн
В кошику  од. на суму  грн.
IXTK170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794BF4713B18748&compId=IXTK170P10P.pdf?ci_sign=f70b69b80f9b410a7c33f367002501ddeb7e430b
IXTK170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 890W
Case: TO264
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
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IXTT90P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA05F2055B718BF&compId=IXT_90P10P.pdf?ci_sign=874a10be422ad2b256b9a661a7f0701651c5c108
IXTT90P10P
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -90A; 462W; TO268
Technology: PolarP™
Mounting: SMD
Kind of package: tube
Drain-source voltage: -100V
Drain current: -90A
Gate charge: 0.12µC
Reverse recovery time: 144ns
On-state resistance: 25mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 462W
Case: TO268
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
IXTN170P10P pVersion=0046&contRep=ZT&docId=005056AB752F1EE79794A3DD0CC20748&compId=IXTN170P10P.pdf?ci_sign=836eb5a6f8f0b2903a734fc7c94f64d2235ce61f
IXTN170P10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -170A; SOT227B; screw; Idm: -510A
Technology: PolarP™
Mechanical mounting: screw
Semiconductor structure: single transistor
Pulsed drain current: -510A
Drain-source voltage: -100V
Drain current: -170A
Gate charge: 240nC
Reverse recovery time: 176ns
On-state resistance: 14mΩ
Polarisation: unipolar
Gate-source voltage: ±30V
Power dissipation: 890W
Electrical mounting: screw
Case: SOT227B
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
товару немає в наявності
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IXTP52P10P pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA072DEB27DD8BF&compId=IXT_52P10P.pdf?ci_sign=951815fe794f76b7770a49bf89c6d151dc043a97
IXTP52P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -52A; 300W; TO220AB
Technology: PolarP™
Mounting: THT
Kind of package: tube
Drain-source voltage: -100V
Drain current: -52A
Gate charge: 60nC
Reverse recovery time: 120ns
On-state resistance: 50mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Power dissipation: 300W
Case: TO220AB
Kind of channel: enhancement
Type of transistor: P-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
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