| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IXFN120N65X2 | IXYS |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 108A Pulsed drain current: 240A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 24mΩ Gate charge: 240nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 220ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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IXTN120P20T | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -200V Drain current: -106A Pulsed drain current: -400A Power dissipation: 830W Case: SOT227B Gate-source voltage: ±15V On-state resistance: 30mΩ Gate charge: 740nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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IXFA3N120 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
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IXFA6N120P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO263 Gate-source voltage: ±30V On-state resistance: 2.75Ω Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
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IXFH6N120 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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IXFH6N120P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 6A Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhanced |
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IXFN26N120P | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 23A Pulsed drain current: 60A Power dissipation: 695W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.5Ω Gate charge: 255nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 300ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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IXFH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet |
на замовлення 273 шт: термін постачання 21-30 дні (днів) |
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IXTH110N25T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 110A Power dissipation: 694W Case: TO247-3 On-state resistance: 26mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 170ns |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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| IXKC25N80C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 550ns |
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IXKR25N80C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
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IXFH30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 200ns |
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IXFH30N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 62nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 460W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
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IXFT30N50Q3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhanced |
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IXTQ30N50L | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
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IXTQ30N50L2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
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IXTQ30N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns Mounting: THT Polarisation: unipolar Kind of package: tube Case: TO3P Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet |
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IXTT30N50L | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
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IXTT30N50L2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 240nC Kind of channel: enhanced Reverse recovery time: 0.5µs Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.215Ω Type of transistor: N-MOSFET Power dissipation: 400W Features of semiconductor devices: linear power mosfet |
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IXTT30N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns Mounting: SMD Polarisation: unipolar Kind of package: tube Case: TO268 Gate charge: 70nC Kind of channel: enhanced Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 30A On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 460W Features of semiconductor devices: standard power mosfet |
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LAA125 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LAA125L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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LAA125LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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| LAA125LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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LAA125P | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 99 шт: термін постачання 21-30 дні (днів) |
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LAA125PL | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LAA125PLTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x2.16mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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| LAA125PTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Operating temperature: -40...85°C Manufacturer series: OptoMOS Case: DIP8 On-state resistance: 16Ω Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Kind of output: MOSFET Insulation voltage: 3.75kV Contacts configuration: SPST-NO x2 Max. operating current: 0.17A Type of relay: solid state Relay variant: 1-phase; current source Switched voltage: max. 350V AC; max. 350V DC Mounting: SMT Control current max.: 50mA |
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LAA125S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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| LAA125STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 0.17A Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Operating temperature: -40...85°C Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Manufacturer series: OptoMOS Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC1114N | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 5ms Kind of output: MOSFET |
на замовлення 488 шт: термін постачання 21-30 дні (днів) |
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CPC1114NTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.4A Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source On-state resistance: 2Ω Mounting: SMT Case: SOP4 Operating temperature: -40...85°C Body dimensions: 4.09x3.81x2.03mm Insulation voltage: 1.5kV Manufacturer series: OptoMOS Turn-on time: 2ms Turn-off time: 5ms Kind of output: MOSFET |
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CPC3710CTR | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 0.22A Power dissipation: 1.4W Case: SOT89 Gate-source voltage: ±15V On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: depleted |
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IXFK210N30X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264 Technology: HiPerFET™; X3-Class Mounting: THT Reverse recovery time: 190ns Case: TO264 Kind of package: tube Power dissipation: 1.25kW Drain-source voltage: 300V Drain current: 210A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 375nC Kind of channel: enhanced Gate-source voltage: ±20V |
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IXTK210P10T | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W Technology: TrenchP™ Mounting: THT Reverse recovery time: 200ns Case: TO264 Kind of package: tube Power dissipation: 1.04kW Drain-source voltage: -100V Drain current: -210A On-state resistance: 7.5mΩ Type of transistor: P-MOSFET Polarisation: unipolar Gate charge: 740nC Kind of channel: enhanced Gate-source voltage: ±15V |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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VUO52-16NO1 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors 2,0x0,5mm Case: V1-A-Pack Mechanical mounting: screw |
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| IXFA50N20X3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 70A Power dissipation: 240W Case: TO263 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
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IXFP50N20X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Pulsed drain current: 70A Power dissipation: 240W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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IXTA50N20P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263 Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO263 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
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IXTP50N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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IXTP50N20PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
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IXTQ50N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 50A Power dissipation: 360W Case: TO3P Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 150ns |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
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IXFH150N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO247-3 On-state resistance: 15mΩ Mounting: THT Gate charge: 177nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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IXFT150N20T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Power dissipation: 890W Case: TO268 On-state resistance: 15mΩ Mounting: SMD Gate charge: 177nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 100ns |
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IXTA76N25T | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 76A Power dissipation: 460W Case: TO263 On-state resistance: 44mΩ Mounting: SMD Gate charge: 92nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 148ns |
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IXTA76P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263 Type of transistor: P-MOSFET Technology: TrenchP™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -76A Power dissipation: 298W Case: TO263 Gate-source voltage: ±15V On-state resistance: 25mΩ Mounting: SMD Gate charge: 197nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 70ns |
товар відсутній |
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DSIK45-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 45A x2 Power dissipation: 165W Semiconductor structure: common cathode; double Case: ISOPLUS247™ Kind of package: tube Max. forward impulse current: 0.48kA Max. forward voltage: 1.26V |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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| VHFD37-08IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A Type of bridge rectifier: half-controlled Max. off-state voltage: 0.8kV Load current: 40A Max. forward impulse current: 280A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 50/80mA Features of semiconductor devices: field diodes; freewheelling diode |
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VHFD37-12IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 65mA Features of semiconductor devices: field diodes; freewheelling diode |
товар відсутній |
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VHFD37-16IO1 | IXYS |
Category: Single phase controlled bridge rectif. Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw Type of bridge rectifier: half-controlled Max. off-state voltage: 1.6kV Load current: 40A Max. forward impulse current: 280A Electrical mounting: FASTON connectors Mechanical mounting: screw Version: module Case: V1-A-Pack Leads: connectors 2,0x0,5mm Gate current: 50/80mA Features of semiconductor devices: field diodes; freewheelling diode |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IXTP450P2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns Mounting: THT Reverse recovery time: 400ns Drain-source voltage: 500V Drain current: 16A On-state resistance: 0.33Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 43nC Kind of channel: enhanced Case: TO220AB |
на замовлення 232 шт: термін постачання 21-30 дні (днів) |
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IXFB132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 132A Power dissipation: 1890W Case: PLUS264™ Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 267nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 250ns |
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IXFL132N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Power dissipation: 520W Case: ISOPLUS264™ On-state resistance: 43mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IXFN132N50P3 | IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 112A Pulsed drain current: 330A Power dissipation: 1.5kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 39mΩ Gate charge: 250nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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MMIX1F132N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 63A Pulsed drain current: 330A Power dissipation: 520W Case: SMPD Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: SMD Gate charge: 267nC Kind of channel: enhanced Reverse recovery time: 250ns |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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VUO190-08NO7 | IXYS |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Load current: 240A Max. forward impulse current: 2.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.07V Leads: M6 screws Case: PWS-E Mechanical mounting: screw |
на замовлення 8 шт: термін постачання 21-30 дні (днів) |
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| MIXG120W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Type of module: IGBT Technology: X2PT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 140A |
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| MIXG120W1200TEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Type of module: IGBT Technology: X2PT Topology: IGBT three-phase bridge; NTC thermistor Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Collector current: 140A |
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IXFH20N100P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 570mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
товар відсутній |
| IXFN120N65X2 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Pulsed drain current: 240A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Gate charge: 240nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 220ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2707.27 грн |
| IXTN120P20T |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -106A
Pulsed drain current: -400A
Power dissipation: 830W
Case: SOT227B
Gate-source voltage: ±15V
On-state resistance: 30mΩ
Gate charge: 740nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
товар відсутній
| IXFA3N120 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFA6N120P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 6A; 250W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 2.75Ω
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній
| IXFH6N120 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 791.13 грн |
| 2+ | 527.94 грн |
| 5+ | 499.12 грн |
| IXFH6N120P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 6A
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN26N120P |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 23A
Pulsed drain current: 60A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.5Ω
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 23A; SOT227B; screw; Idm: 60A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 23A
Pulsed drain current: 60A
Power dissipation: 695W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.5Ω
Gate charge: 255nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 300ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 7 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3378.02 грн |
| IXFH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
на замовлення 273 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 503.45 грн |
| 2+ | 421.09 грн |
| 3+ | 420.39 грн |
| 6+ | 398.59 грн |
| 10+ | 392.27 грн |
| 30+ | 383.13 грн |
| IXTH110N25T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 110A; 694W; TO247-3; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 110A
Power dissipation: 694W
Case: TO247-3
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 170ns
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 565.53 грн |
| 2+ | 397.19 грн |
| 6+ | 375.4 грн |
| IXKC25N80C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 550ns
товар відсутній
| IXKR25N80C |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFH30N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; PolarHV™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 200ns
товар відсутній
| IXFH30N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFT30N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFT30N50Q3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXTQ30N50L |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
товар відсутній
| IXTQ30N50L2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
товар відсутній
| IXTQ30N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Mounting: THT
Polarisation: unipolar
Kind of package: tube
Case: TO3P
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
товар відсутній
| IXTT30N50L |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
товар відсутній
| IXTT30N50L2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 240nC
Kind of channel: enhanced
Reverse recovery time: 0.5µs
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.215Ω
Type of transistor: N-MOSFET
Power dissipation: 400W
Features of semiconductor devices: linear power mosfet
товар відсутній
| IXTT30N50P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Mounting: SMD
Polarisation: unipolar
Kind of package: tube
Case: TO268
Gate charge: 70nC
Kind of channel: enhanced
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 30A
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 460W
Features of semiconductor devices: standard power mosfet
товар відсутній
| LAA125 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA125L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.09 грн |
| 4+ | 219.33 грн |
| 11+ | 206.68 грн |
| LAA125LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 73 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 492.09 грн |
| 4+ | 219.33 грн |
| 11+ | 206.68 грн |
| LAA125LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA125P |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 99 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 452.72 грн |
| 5+ | 201.76 грн |
| 12+ | 190.51 грн |
| LAA125PL |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 517.83 грн |
| 4+ | 219.33 грн |
| 11+ | 207.38 грн |
| LAA125PLTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| LAA125PTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Control current max.: 50mA
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Case: DIP8
On-state resistance: 16Ω
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Kind of output: MOSFET
Insulation voltage: 3.75kV
Contacts configuration: SPST-NO x2
Max. operating current: 0.17A
Type of relay: solid state
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Mounting: SMT
Control current max.: 50mA
товар відсутній
| LAA125S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 95 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 529.95 грн |
| 4+ | 224.25 грн |
| 10+ | 211.6 грн |
| LAA125STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; 16Ω; SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC1114N |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
на замовлення 488 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.44 грн |
| 13+ | 68.89 грн |
| 34+ | 64.68 грн |
| CPC1114NTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 400mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.4A
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
On-state resistance: 2Ω
Mounting: SMT
Case: SOP4
Operating temperature: -40...85°C
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Manufacturer series: OptoMOS
Turn-on time: 2ms
Turn-off time: 5ms
Kind of output: MOSFET
товар відсутній
| CPC3710CTR |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 0.22A
Power dissipation: 1.4W
Case: SOT89
Gate-source voltage: ±15V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depleted
товар відсутній
| IXFK210N30X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Technology: HiPerFET™; X3-Class
Mounting: THT
Reverse recovery time: 190ns
Case: TO264
Kind of package: tube
Power dissipation: 1.25kW
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 375nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 210A; 1250W; TO264
Technology: HiPerFET™; X3-Class
Mounting: THT
Reverse recovery time: 190ns
Case: TO264
Kind of package: tube
Power dissipation: 1.25kW
Drain-source voltage: 300V
Drain current: 210A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 375nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
| IXTK210P10T |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: TO264
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Technology: TrenchP™
Mounting: THT
Reverse recovery time: 200ns
Case: TO264
Kind of package: tube
Power dissipation: 1.04kW
Drain-source voltage: -100V
Drain current: -210A
On-state resistance: 7.5mΩ
Type of transistor: P-MOSFET
Polarisation: unipolar
Gate charge: 740nC
Kind of channel: enhanced
Gate-source voltage: ±15V
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1623.9 грн |
| 2+ | 1425.66 грн |
| VUO52-16NO1 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors 2,0x0,5mm
Case: V1-A-Pack
Mechanical mounting: screw
товар відсутній
| IXFA50N20X3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
товар відсутній
| IXFP50N20X3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 381.56 грн |
| 3+ | 319.16 грн |
| 4+ | 254.48 грн |
| 9+ | 240.42 грн |
| IXTA50N20P |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO263
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXTP50N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 225 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.53 грн |
| 3+ | 201.05 грн |
| 5+ | 180.67 грн |
| 13+ | 170.83 грн |
| 50+ | 168.01 грн |
| IXTP50N20PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 20A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
товар відсутній
| IXTQ50N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 150ns
на замовлення 294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 262.7 грн |
| 3+ | 216.52 грн |
| 5+ | 194.02 грн |
| 12+ | 183.48 грн |
| 30+ | 180.67 грн |
| IXFH150N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 928.92 грн |
| 3+ | 815.47 грн |
| IXFT150N20T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 100ns
товар відсутній
| IXTA76N25T |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO263; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO263
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
товар відсутній
| IXTA76P10T |
|
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -76A; 298W; TO263
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -76A
Power dissipation: 298W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 197nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 70ns
товар відсутній
| DSIK45-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A x2
Power dissipation: 165W
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45Ax2; tube; Ifsm: 480A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 45A x2
Power dissipation: 165W
Semiconductor structure: common cathode; double
Case: ISOPLUS247™
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.26V
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 513.29 грн |
| 3+ | 359.23 грн |
| 7+ | 339.54 грн |
| VHFD37-08IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
| VHFD37-12IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 65mA
Features of semiconductor devices: field diodes; freewheelling diode
товар відсутній
| VHFD37-16IO1 |
|
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 40A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 40A
Max. forward impulse current: 280A
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors 2,0x0,5mm
Gate current: 50/80mA
Features of semiconductor devices: field diodes; freewheelling diode
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2282.55 грн |
| 2+ | 2003.52 грн |
| IXTP450P2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Mounting: THT
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhanced
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB; 400ns
Mounting: THT
Reverse recovery time: 400ns
Drain-source voltage: 500V
Drain current: 16A
On-state resistance: 0.33Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 43nC
Kind of channel: enhanced
Case: TO220AB
на замовлення 232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 252.1 грн |
| 3+ | 210.9 грн |
| 5+ | 168.01 грн |
| 14+ | 158.88 грн |
| IXFB132N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 132A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 132A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 267nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 250ns
товар відсутній
| IXFL132N50P3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 63A; 520W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Power dissipation: 520W
Case: ISOPLUS264™
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IXFN132N50P3 |
|
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Pulsed drain current: 330A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 112A; SOT227B; screw; Idm: 330A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 112A
Pulsed drain current: 330A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 39mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2019.09 грн |
| 2+ | 1772.94 грн |
| 3+ | 1772.24 грн |
| MMIX1F132N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 63A; Idm: 330A; 520W
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 63A
Pulsed drain current: 330A
Power dissipation: 520W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 267nC
Kind of channel: enhanced
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2764.05 грн |
| 20+ | 2524.43 грн |
| VUO190-08NO7 |
|
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 240A; Ifsm: 2.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Load current: 240A
Max. forward impulse current: 2.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.07V
Leads: M6 screws
Case: PWS-E
Mechanical mounting: screw
на замовлення 8 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4621.13 грн |
| 5+ | 4220.75 грн |
| MIXG120W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 140A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 140A
товар відсутній
| MIXG120W1200TEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 140A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Mechanical mounting: screw
Electrical mounting: Press-in PCB
Case: E3-Pack
Type of module: IGBT
Technology: X2PT
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Collector current: 140A
товар відсутній
| IXFH20N100P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
товар відсутній