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IXFT32N50Q IXFT32N50Q IXYS IXF%28H%2CT%2930N50Q%2C%2032N50Q.pdf Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
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IXFT40N30Q IXFT40N30Q IXYS littelfuse-discrete-mosfets-ixf-40n30q-datasheet?assetguid=f78be03e-d57e-4119-ad68-2f01186af0ab Description: MOSFET N-CH 300V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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IXFT52N30Q IXFT52N30Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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IXFX34N80 IXFX34N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 34A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IXFX44N60 IXFX44N60 IXYS 98611.pdf Description: MOSFET N-CH 600V 44A PLUS247
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IXFX90N20Q IXFX90N20Q IXYS media?resourcetype=datasheets&itemid=53EC60B4-4F54-4694-A250-F3367BA729E0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-90N20Q-Datasheet.PDF Description: MOSFET N-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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IXFX90N30 IXFX90N30 IXYS 98537.pdf Description: MOSFET N-CH 300V 90A PLUS247-3
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IXMS150PSI IXMS150PSI IXYS IXMS150PSI.pdf Description: IC REG CTRLR HALF-BRIDGE 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 10kHz ~ 400kHz
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V
Supplier Device Package: 24-DIP
Synchronous Rectifier: No
Control Features: Dead Time Control, Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 95%
Clock Sync: No
Number of Outputs: 2
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IXTH10P50 IXTH10P50 IXYS IXTH10P50.pdf Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXTN21N100 IXTN21N100 IXYS Description: MOSFET N-CH 1000V 21A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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MUBW10-06A7 MUBW10-06A7 IXYS MUBW10-06A7.pdf Description: IGBT MODULE 600V 20A 85W E2
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MUBW10-12A7 IXYS Description: IGBT MODULE 1200V 20A 105W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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MUBW25-12A7 IXYS MUBW25-12A7.pdf Description: IGBT MODULE 1200V 50A 225W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 900 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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IXTU01N100 IXTU01N100 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_01n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 100MA TO251
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VM0550-2F IXYS Description: MOSFET N-CH 100V 590A MODULE
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VMO580-02F VMO580-02F IXYS Description: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
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DSA1-18D DSA1-18D IXYS dsa1-datasheet?assetguid=8215b041-d0de-471e-8e53-26514592e572 Description: DIODE AVALANCHE 1800V 2.3A
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 2.3A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 7 A
Current - Reverse Leakage @ Vr: 700 µA @ 1800 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+411.60 грн
10+269.61 грн
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IXDD404PI IXDD404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD404SI IXDD404SI IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD404SI-16 IXDD404SI-16 IXYS Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408CI IXYS Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408SI IXDD408SI IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408YI IXDD408YI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414CI IXYS Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414PI IXDD414PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414YI IXDD414YI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4410SI IXBD4410SI IXYS Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4411PI IXBD4411PI IXYS Description: IC GATE DRVR HIGH-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4411SI IXBD4411SI IXYS Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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EVDD404 IXYS Description: EVALUATION BOARD FOR IXDD404 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD404 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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EVDD408 IXYS Description: EVALUATION BOARD FOR IXDD408 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD408 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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EVDD414 IXYS 9200-0231.pdf Description: EVALUATION BOARD FOR IXDD414 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD414 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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IXDI404PI IXDI404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDI404SI IXDI404SI IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI404SI-16 IXDI404SI-16 IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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IXDN404PI IXDN404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI IXDN404SI IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI-16 IXDN404SI-16 IXYS Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF404PI IXDF404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDF404SI IXDF404SI IXYS 99018.pdf Description: IC MOSFET DRVR LS 4A DUAL 8-SOIC
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IXDF404SI-16 IXDF404SI-16 IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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MCC19-12io1B MCC19-12io1B IXYS MCC19-12io1B.pdf Description: MOD THYRISTOR PHASE LEG TO-240AA
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 Мінімальне замовлення: 36 шт
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VHF15-14io5 VHF15-14io5 IXYS L040.pdf Description: BRIDGE RECTIF SGLE PHASE W/DIODE
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DSS17-06CR DSS17-06CR IXYS media?resourcetype=datasheets&itemid=42ab5aac-0572-4e8c-aa2d-c149642eb066&filename=littelfuse-power-semiconductors-dss17-06cr-datasheet Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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DSEI2X101-12A DSEI2X101-12A IXYS Littelfuse-Power-Semiconductors-DSEI2x101-12A-Datasheet?assetguid=d348cfdf-a2e4-49bd-a341-cfabc6821124 description Description: DIODE MOD GP 1200V 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
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DSS2X101-015A DSS2X101-015A IXYS Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet?assetguid=680919b5-65d8-4679-8dc0-bb8f5e00f429 description Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
1+1968.15 грн
10+1389.46 грн
100+1191.05 грн
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MCC310-12io1 MCC310-12io1 IXYS MCC310%2CMCD310.pdf Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9879.90 грн
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DSEI2X31-10B DSEI2X31-10B IXYS 238_DSEI2x30-10B_DSEI2x31-10B.pdf Description: DIODE MOD GP 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1778.47 грн
10+1249.18 грн
100+1052.37 грн
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IXFN36N60 IXFN36N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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IXTH20N60 IXTH20N60 IXYS littelfusediscretemosfetsnchannelstandardixtm20n60datasheetpdf.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXER35N120D1 IXER35N120D1 IXYS IXER35N120D1.pdf Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
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MCC4408I01B MCC4408I01B IXYS SCR%20Modules%20Definition.pdf Description: SCR MODULE 800V 80A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
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VMO650-01F IXYS VMO650-01F.pdf Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+16537.65 грн
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MCD95-08io8B MCD95-08io8B IXYS media?resourcetype=datasheets&itemid=2ABE4C79-BE4D-46EF-B10A-86B0CB16FF5A&filename=Littelfuse-Power-Semiconductors-MCD95-08io8B-Datasheet Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+2445.78 грн
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DSI35-12A IXYS DS_I_A_AI35_Rev_Oct_2000.pdf Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
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VUO52-16NO1 VUO52-16NO1 IXYS Littelfuse-Power-Semiconductors-VUO52-16NO1-Datasheet?assetguid=10C35496-3724-46FE-BA4E-F7BC114CEEF7 Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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MCC250-14io1 MCC250-14io1 IXYS MCC%2CMCD_250.pdf Description: SCR MODULE 1.4KV 450A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 287 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.4 kV
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IXGM40N60A IXGM40N60A IXYS IXG%28H%2CM%2940N60%28A%29.pdf Description: IGBT MODULE 600V 75A 250W TO-204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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IXSH40N60A IXSH40N60A IXYS Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товару немає в наявності
 Мінімальне замовлення: 30 шт
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DSEP12-12A DSEP12-12A IXYS Littelfuse-Power-Semiconductors-DSEP12-12A-Datasheet?assetguid=afbcc1ff-023d-4f05-945c-a5bdf624e7b8 Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
2+263.39 грн
50+128.16 грн
100+116.05 грн
500+88.98 грн
1000+82.57 грн
Мінімальне замовлення: 2 шт
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IXFT32N50Q IXF%28H%2CT%2930N50Q%2C%2032N50Q.pdf
IXFT32N50Q
Виробник: IXYS
Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
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IXFT40N30Q littelfuse-discrete-mosfets-ixf-40n30q-datasheet?assetguid=f78be03e-d57e-4119-ad68-2f01186af0ab
IXFT40N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
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IXFT52N30Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf
IXFT52N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
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IXFX34N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf
IXFX34N80
Виробник: IXYS
Description: MOSFET N-CH 800V 34A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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Мінімальне замовлення: 300 шт
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IXFX44N60 98611.pdf
IXFX44N60
Виробник: IXYS
Description: MOSFET N-CH 600V 44A PLUS247
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Мінімальне замовлення: 30 шт
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IXFX90N20Q media?resourcetype=datasheets&itemid=53EC60B4-4F54-4694-A250-F3367BA729E0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-90N20Q-Datasheet.PDF
IXFX90N20Q
Виробник: IXYS
Description: MOSFET N-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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IXFX90N30 98537.pdf
IXFX90N30
Виробник: IXYS
Description: MOSFET N-CH 300V 90A PLUS247-3
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IXMS150PSI IXMS150PSI.pdf
IXMS150PSI
Виробник: IXYS
Description: IC REG CTRLR HALF-BRIDGE 24DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Output Type: Transistor Driver
Mounting Type: Through Hole
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 10kHz ~ 400kHz
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 12V
Supplier Device Package: 24-DIP
Synchronous Rectifier: No
Control Features: Dead Time Control, Enable, Frequency Control
Output Phases: 2
Duty Cycle (Max): 95%
Clock Sync: No
Number of Outputs: 2
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IXTH10P50 IXTH10P50.pdf
IXTH10P50
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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Мінімальне замовлення: 30 шт
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IXTN21N100
IXTN21N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 21A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
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Мінімальне замовлення: 10 шт
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MUBW10-06A7 MUBW10-06A7.pdf
MUBW10-06A7
Виробник: IXYS
Description: IGBT MODULE 600V 20A 85W E2
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Мінімальне замовлення: 6 шт
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MUBW10-12A7
Виробник: IXYS
Description: IGBT MODULE 1200V 20A 105W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 105 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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Мінімальне замовлення: 6 шт
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MUBW25-12A7 MUBW25-12A7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 50A 225W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 900 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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Мінімальне замовлення: 6 шт
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IXTU01N100 littelfuse_discrete_mosfets_n-channel_standard_ixt_01n100_datasheet.pdf.pdf
IXTU01N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 100MA TO251
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Мінімальне замовлення: 70 шт
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VM0550-2F
Виробник: IXYS
Description: MOSFET N-CH 100V 590A MODULE
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Мінімальне замовлення: 3 шт
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VMO580-02F
VMO580-02F
Виробник: IXYS
Description: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
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Мінімальне замовлення: 2 шт
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DSA1-18D dsa1-datasheet?assetguid=8215b041-d0de-471e-8e53-26514592e572
DSA1-18D
Виробник: IXYS
Description: DIODE AVALANCHE 1800V 2.3A
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 2.3A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 7 A
Current - Reverse Leakage @ Vr: 700 µA @ 1800 V
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+411.60 грн
10+269.61 грн
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IXDD404PI
IXDD404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD404SI
IXDD404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD404SI-16
IXDD404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408CI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408SI
IXDD408SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD408YI
IXDD408YI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414CI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414PI
IXDD414PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDD414YI
IXDD414YI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 25ns, 22ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4410SI
IXBD4410SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4411PI
IXBD4411PI
Виробник: IXYS
Description: IC GATE DRVR HIGH-SIDE 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-DIP
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXBD4411SI
IXBD4411SI
Виробник: IXYS
Description: IC GATE DRVR HIGH-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 15ns, 15ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1V, 3.65V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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EVDD404
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD404 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD404 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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EVDD408
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD408 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD408 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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EVDD414 9200-0231.pdf
Виробник: IXYS
Description: EVALUATION BOARD FOR IXDD414 DVR
Packaging: Bulk
Function: FET Driver (External FET)
Type: Power Management
Utilized IC / Part: IX DD414 DVR
Supplied Contents: Board(s)
Part Status: Obsolete
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IXDI404PI
IXDI404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDI404SI 99018.pdf
IXDI404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
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Мінімальне замовлення: 95 шт
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IXDI404SI-16 99018.pdf
IXDI404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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IXDN404PI
IXDN404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI
IXDN404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI-16
IXDN404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF404PI
IXDF404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDF404SI 99018.pdf
IXDF404SI
Виробник: IXYS
Description: IC MOSFET DRVR LS 4A DUAL 8-SOIC
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IXDF404SI-16 99018.pdf
IXDF404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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MCC19-12io1B MCC19-12io1B.pdf
MCC19-12io1B
Виробник: IXYS
Description: MOD THYRISTOR PHASE LEG TO-240AA
товару немає в наявності
Мінімальне замовлення: 36 шт
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VHF15-14io5 L040.pdf
VHF15-14io5
Виробник: IXYS
Description: BRIDGE RECTIF SGLE PHASE W/DIODE
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DSS17-06CR media?resourcetype=datasheets&itemid=42ab5aac-0572-4e8c-aa2d-c149642eb066&filename=littelfuse-power-semiconductors-dss17-06cr-datasheet
DSS17-06CR
Виробник: IXYS
Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
DSEI2X101-12A description Littelfuse-Power-Semiconductors-DSEI2x101-12A-Datasheet?assetguid=d348cfdf-a2e4-49bd-a341-cfabc6821124
DSEI2X101-12A
Виробник: IXYS
Description: DIODE MOD GP 1200V 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
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DSS2X101-015A description Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet?assetguid=680919b5-65d8-4679-8dc0-bb8f5e00f429
DSS2X101-015A
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1968.15 грн
10+1389.46 грн
100+1191.05 грн
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MCC310-12io1 MCC310%2CMCD310.pdf
MCC310-12io1
Виробник: IXYS
Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+9879.90 грн
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DSEI2X31-10B 238_DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Виробник: IXYS
Description: DIODE MOD GP 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1778.47 грн
10+1249.18 грн
100+1052.37 грн
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IXFN36N60 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf
IXFN36N60
Виробник: IXYS
Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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Мінімальне замовлення: 10 шт
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IXTH20N60 littelfusediscretemosfetsnchannelstandardixtm20n60datasheetpdf.pdf
IXTH20N60
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXER35N120D1 IXER35N120D1.pdf
IXER35N120D1
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
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MCC4408I01B SCR%20Modules%20Definition.pdf
MCC4408I01B
Виробник: IXYS
Description: SCR MODULE 800V 80A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
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Мінімальне замовлення: 18 шт
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VMO650-01F VMO650-01F.pdf
Виробник: IXYS
Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+16537.65 грн
В кошику  од. на суму  грн.
MCD95-08io8B media?resourcetype=datasheets&itemid=2ABE4C79-BE4D-46EF-B10A-86B0CB16FF5A&filename=Littelfuse-Power-Semiconductors-MCD95-08io8B-Datasheet
MCD95-08io8B
Виробник: IXYS
Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2445.78 грн
В кошику  од. на суму  грн.
DSI35-12A DS_I_A_AI35_Rev_Oct_2000.pdf
Виробник: IXYS
Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
товару немає в наявності
Мінімальне замовлення: 10 шт
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VUO52-16NO1 Littelfuse-Power-Semiconductors-VUO52-16NO1-Datasheet?assetguid=10C35496-3724-46FE-BA4E-F7BC114CEEF7
VUO52-16NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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MCC250-14io1 MCC%2CMCD_250.pdf
MCC250-14io1
Виробник: IXYS
Description: SCR MODULE 1.4KV 450A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 287 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.4 kV
товару немає в наявності
Мінімальне замовлення: 2 шт
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IXGM40N60A IXG%28H%2CM%2940N60%28A%29.pdf
IXGM40N60A
Виробник: IXYS
Description: IGBT MODULE 600V 75A 250W TO-204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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IXSH40N60A
IXSH40N60A
Виробник: IXYS
Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товару немає в наявності
Мінімальне замовлення: 30 шт
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DSEP12-12A Littelfuse-Power-Semiconductors-DSEP12-12A-Datasheet?assetguid=afbcc1ff-023d-4f05-945c-a5bdf624e7b8
DSEP12-12A
Виробник: IXYS
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 1449 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+263.39 грн
50+128.16 грн
100+116.05 грн
500+88.98 грн
1000+82.57 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.