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IXDI404PI IXDI404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDI404SI IXDI404SI IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI404SI-16 IXDI404SI-16 IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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IXDN404PI IXDN404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI IXDN404SI IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI-16 IXDN404SI-16 IXYS Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF404PI IXDF404PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDF404SI IXDF404SI IXYS 99018.pdf Description: IC MOSFET DRVR LS 4A DUAL 8-SOIC
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IXDF404SI-16 IXDF404SI-16 IXYS 99018.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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MCC19-12io1B MCC19-12io1B IXYS MCC19-12io1B.pdf Description: MOD THYRISTOR PHASE LEG TO-240AA
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VHF15-14io5 VHF15-14io5 IXYS L040.pdf Description: BRIDGE RECTIF SGLE PHASE W/DIODE
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DSS17-06CR DSS17-06CR IXYS media?resourcetype=datasheets&itemid=42ab5aac-0572-4e8c-aa2d-c149642eb066&filename=littelfuse-power-semiconductors-dss17-06cr-datasheet Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
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DSEI2X101-12A DSEI2X101-12A IXYS media?resourcetype=datasheets&itemid=d348cfdf-a2e4-49bd-a341-cfabc6821124&filename=Littelfuse-Power-Semiconductors-DSEI2x101-12A-Datasheet description Description: DIODE MOD GP 1200V 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
1+3374.36 грн
10+2443.43 грн
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DSS2X101-015A DSS2X101-015A IXYS Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet?assetguid=680919b5-65d8-4679-8dc0-bb8f5e00f429 description Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
1+2032.22 грн
10+1434.90 грн
100+1230.01 грн
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MCC310-12io1 MCC310-12io1 IXYS MCC310%2CMCD310.pdf Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+9987.23 грн
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DSEI2X31-10B DSEI2X31-10B IXYS DSEI2x30-10B_DSEI2x31-10B.pdf Description: DIODE MOD GP 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
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IXFN36N60 IXFN36N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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IXTH20N60 IXTH20N60 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth20n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXER35N120D1 IXER35N120D1 IXYS IXER35N120D1.pdf Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
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MCC4408I01B MCC4408I01B IXYS SCR%20Modules%20Definition.pdf Description: SCR MODULE 800V 80A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
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VMO650-01F IXYS VMO650-01F.pdf Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+16717.32 грн
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MCD95-08io8B MCD95-08io8B IXYS media?resourcetype=datasheets&itemid=2ABE4C79-BE4D-46EF-B10A-86B0CB16FF5A&filename=Littelfuse-Power-Semiconductors-MCD95-08io8B-Datasheet Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
1+2472.36 грн
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DSI35-12A IXYS DS_I_A_AI35_Rev_Oct_2000.pdf Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
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VUO52-16NO1 VUO52-16NO1 IXYS Littelfuse-Power-Semiconductors-VUO52-16NO1-Datasheet?assetguid=10C35496-3724-46FE-BA4E-F7BC114CEEF7 Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+2091.99 грн
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MCC250-14io1 MCC250-14io1 IXYS MCC,MCD_250.pdf Description: THYRISTOR DUAL 1400V 450A
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 287 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.4 kV
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IXGM40N60A IXGM40N60A IXYS IXG%28H%2CM%2940N60%28A%29.pdf Description: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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IXSH40N60A IXSH40N60A IXYS Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
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DSEP12-12A DSEP12-12A IXYS Littelfuse-Power-Semiconductors-DSEP12-12A-Datasheet?assetguid=afbcc1ff-023d-4f05-945c-a5bdf624e7b8 Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
2+254.61 грн
50+124.10 грн
100+112.37 грн
500+86.15 грн
Мінімальне замовлення: 2
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VUO60-16NO3 IXYS VUO60-16NO3.pdf Description: BRIDGE RECT 3P 1.6KV 72A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 72 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXGH32N170A IXGH32N170A IXYS Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
1+1502.04 грн
30+916.61 грн
120+839.05 грн
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IXBH16N170A IXBH16N170A IXYS Description: IGBT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
1+1101.50 грн
30+651.30 грн
120+561.63 грн
510+521.82 грн
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VUE75-12NO7 IXYS ee0cd6e2-94ad-4a36-91cc-fb053843982e.pdf Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
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ME0500-06DA ME0500-06DA IXYS Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
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IXFN27N80 IXFN27N80 IXYS Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
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IXFX55N50F IXFX55N50F IXYS Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
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VU068-08N07 IXYS Description: BRIDGE RECT 3P 800V 68A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 68 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
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MCC161-22IO1 MCC161-22IO1 IXYS media?resourcetype=datasheets&itemid=398a0afc-614f-4ceb-af57-781f5b6271d1&filename=Littelfuse-Power-Semiconductors-MCC161-22io1-Datasheet Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+9339.84 грн
12+8325.72 грн
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IXLF19N250A IXLF19N250A IXYS Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
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MDI 300-12 A4 IXYS MII300-12A4_MID300-12A4_MDI300-12A4.pdf Description: TRANS IGBT PWR MODULE 1.2KV 330A
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MEE 300-06DA IXYS 96512.pdf Description: DIODE MODULE 600V 304A Y4-M6
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HTZ270H48K IXYS HTZ270H_series.pdf Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
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IXGN60N60 IXGN60N60 IXYS Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
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MCC250-18io1 MCC250-18io1 IXYS MCC,MCD_250.pdf Description: THYRISTOR DUAL 1800V 450A
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DSEE30-12A DSEE30-12A IXYS DSEE30-12A.PDF Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 3329 шт:
термін постачання 21-31 дні (днів)
1+1557.16 грн
30+980.62 грн
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DSDI60-16A DSDI60-16A IXYS Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133 Description: DIODE STANDARD 1600V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
1+863.19 грн
30+554.35 грн
120+518.41 грн
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MCC310-16io1 MCC310-16io1 IXYS MCC310%2CMCD310.pdf Description: SCR DUAL 1600V 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
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VUO50-08NO3 VUO50-08NO3 IXYS VUO50.pdf Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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IXDN430MYI IXDN430MYI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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VUO82-16NO7 VUO82-16NO7 IXYS VUO62%2CVU082.pdf Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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VBO130-08NO7 VBO130-08NO7 IXYS media?resourcetype=datasheets&itemid=32B57B06-D8AF-4BF1-AD92-374C314205BE&filename=Littelfuse-Power-Semiconductors-VBO130-08NO7-Datasheet Description: BRIDGE RECT 1P 800V 122A PWS-E
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 122 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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IXFT13N100 IXFT13N100 IXYS IXFT13N100%2C%2012N.pdf Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXDI402SI IXDI402SI IXYS 99015.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FII40-06D FII40-06D IXYS FII40-06D.pdf Description: IGBT H BRIDGE 600V 40A I4PAK5
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MCC312-16io1 MCC312-16io1 IXYS Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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DSA9-16F DSA9-16F IXYS DSA9.pdf Description: DIODE AVALANCHE 1.6KV 11A DO203
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IXDD409YI IXDD409YI IXYS Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXGH45N120 IXGH45N120 IXYS littelfuse_discrete_igbts_pt_ixgh45n120_datasheet.pdf.pdf Description: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXGH60N60 IXGH60N60 IXYS Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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IX6R11S3 IX6R11S3 IXYS DS99037.pdf Description: IC GATE DRVR HALF-BRIDGE 16SOIC
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MCC26-14io1B MCC26-14io1B IXYS media?resourcetype=datasheets&itemid=db47a66a-a2da-403b-9630-c03f3e36ff6c&filename=Littelfuse-Power-Semiconductors-MCC26-14io1B-Datasheet Description: DUL THYRIS MOD 800-2200V 19-320A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+2144.78 грн
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IXDI404PI
IXDI404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDI404SI 99018.pdf
IXDI404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI404SI-16 99018.pdf
IXDI404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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IXDN404PI
IXDN404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI
IXDN404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN404SI-16
IXDN404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF404PI
IXDF404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
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IXDF404SI 99018.pdf
IXDF404SI
Виробник: IXYS
Description: IC MOSFET DRVR LS 4A DUAL 8-SOIC
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IXDF404SI-16 99018.pdf
IXDF404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
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MCC19-12io1B MCC19-12io1B.pdf
MCC19-12io1B
Виробник: IXYS
Description: MOD THYRISTOR PHASE LEG TO-240AA
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VHF15-14io5 L040.pdf
VHF15-14io5
Виробник: IXYS
Description: BRIDGE RECTIF SGLE PHASE W/DIODE
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DSS17-06CR media?resourcetype=datasheets&itemid=42ab5aac-0572-4e8c-aa2d-c149642eb066&filename=littelfuse-power-semiconductors-dss17-06cr-datasheet
DSS17-06CR
Виробник: IXYS
Description: DIODE SCHOTT 600V 17A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 17A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.32 V @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 600 V
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DSEI2X101-12A description media?resourcetype=datasheets&itemid=d348cfdf-a2e4-49bd-a341-cfabc6821124&filename=Littelfuse-Power-Semiconductors-DSEI2x101-12A-Datasheet
DSEI2X101-12A
Виробник: IXYS
Description: DIODE MOD GP 1200V 91A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 91A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 100 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3374.36 грн
10+2443.43 грн
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DSS2X101-015A description Littelfuse-Power-Semiconductors-DSS2x101-015A-Datasheet?assetguid=680919b5-65d8-4679-8dc0-bb8f5e00f429
DSS2X101-015A
Виробник: IXYS
Description: DIODE MOD SCHOTTKY 150V SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 100 A
Current - Reverse Leakage @ Vr: 4 mA @ 150 V
на замовлення 368 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2032.22 грн
10+1434.90 грн
100+1230.01 грн
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MCC310-12io1 MCC310%2CMCD310.pdf
MCC310-12io1
Виробник: IXYS
Description: THYRISTOR MODULE 1300V
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.2 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9987.23 грн
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DSEI2X31-10B DSEI2x30-10B_DSEI2x31-10B.pdf
DSEI2X31-10B
Виробник: IXYS
Description: DIODE MOD GP 1000V 30A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
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IXFN36N60 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf
IXFN36N60
Виробник: IXYS
Description: MOSFET N-CH 600V 36A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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IXTH20N60 littelfuse_discrete_mosfets_n-channel_standard_ixth20n60_datasheet.pdf.pdf
IXTH20N60
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXER35N120D1 IXER35N120D1.pdf
IXER35N120D1
Виробник: IXYS
Description: IGBT 1200V 50A 200W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A
Supplier Device Package: ISOPLUS247™
IGBT Type: NPT
Switching Energy: 5.4mJ (on), 2.6mJ (off)
Test Condition: 600V, 35A, 39Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
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MCC4408I01B SCR%20Modules%20Definition.pdf
MCC4408I01B
Виробник: IXYS
Description: SCR MODULE 800V 80A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 51 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 80 A
Voltage - Off State: 800 V
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VMO650-01F VMO650-01F.pdf
Виробник: IXYS
Description: MOSFET N-CH 100V 690A Y3-DCB
Packaging: Bulk
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 690A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 500mA, 10V
Power Dissipation (Max): 2500W (Tc)
Vgs(th) (Max) @ Id: 6V @ 130mA
Supplier Device Package: Y3-DCB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 59000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+16717.32 грн
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MCD95-08io8B media?resourcetype=datasheets&itemid=2ABE4C79-BE4D-46EF-B10A-86B0CB16FF5A&filename=Littelfuse-Power-Semiconductors-MCD95-08io8B-Datasheet
MCD95-08io8B
Виробник: IXYS
Description: THYRISTOR DOUB 800V 116A TO-240
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A, 2400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 116 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 180 A
Voltage - Off State: 800 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2472.36 грн
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DSI35-12A DS_I_A_AI35_Rev_Oct_2000.pdf
Виробник: IXYS
Description: DIODE AVAL 1.2KV 49A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 49A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 150 A
Current - Reverse Leakage @ Vr: 4 mA @ 1200 V
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VUO52-16NO1 Littelfuse-Power-Semiconductors-VUO52-16NO1-Datasheet?assetguid=10C35496-3724-46FE-BA4E-F7BC114CEEF7
VUO52-16NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 54A V1-A
Packaging: Bulk
Package / Case: V1-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: V1-A
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 54 A
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2091.99 грн
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MCC250-14io1 MCC,MCD_250.pdf
MCC250-14io1
Виробник: IXYS
Description: THYRISTOR DUAL 1400V 450A
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 287 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 450 A
Voltage - Off State: 1.4 kV
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IXGM40N60A IXG%28H%2CM%2940N60%28A%29.pdf
IXGM40N60A
Виробник: IXYS
Description: IGBT MODULE 600V 75A 250W TO204
Package / Case: TO-204AA, TO-3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: TO-204
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4.5 nF @ 25 V
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IXSH40N60A
IXSH40N60A
Виробник: IXYS
Description: IGBT 600V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/400ns
Switching Energy: 2.5mJ (off)
Test Condition: 480V, 40A, 2.7Ohm, 15V
Gate Charge: 190 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
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DSEP12-12A Littelfuse-Power-Semiconductors-DSEP12-12A-Datasheet?assetguid=afbcc1ff-023d-4f05-945c-a5bdf624e7b8
DSEP12-12A
Виробник: IXYS
Description: DIODE STANDARD 1200V 15A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.75 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 563 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.61 грн
50+124.10 грн
100+112.37 грн
500+86.15 грн
Мінімальне замовлення: 2
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VUO60-16NO3 VUO60-16NO3.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 72A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 72 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXGH32N170A
IXGH32N170A
Виробник: IXYS
Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1502.04 грн
30+916.61 грн
120+839.05 грн
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IXBH16N170A
IXBH16N170A
Виробник: IXYS
Description: IGBT 1700V 16A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
на замовлення 721 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1101.50 грн
30+651.30 грн
120+561.63 грн
510+521.82 грн
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VUE75-12NO7 ee0cd6e2-94ad-4a36-91cc-fb053843982e.pdf
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
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ME0500-06DA
ME0500-06DA
Виробник: IXYS
Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
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IXFN27N80
IXFN27N80
Виробник: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
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IXFX55N50F
IXFX55N50F
Виробник: IXYS
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
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VU068-08N07
Виробник: IXYS
Description: BRIDGE RECT 3P 800V 68A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 68 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
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MCC161-22IO1 media?resourcetype=datasheets&itemid=398a0afc-614f-4ceb-af57-781f5b6271d1&filename=Littelfuse-Power-Semiconductors-MCC161-22io1-Datasheet
MCC161-22IO1
Виробник: IXYS
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+9339.84 грн
12+8325.72 грн
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IXLF19N250A
IXLF19N250A
Виробник: IXYS
Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
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MDI 300-12 A4 MII300-12A4_MID300-12A4_MDI300-12A4.pdf
Виробник: IXYS
Description: TRANS IGBT PWR MODULE 1.2KV 330A
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MEE 300-06DA 96512.pdf
Виробник: IXYS
Description: DIODE MODULE 600V 304A Y4-M6
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HTZ270H48K HTZ270H_series.pdf
Виробник: IXYS
Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
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IXGN60N60
IXGN60N60
Виробник: IXYS
Description: IGBT MOD 600V 100A 250W SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
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MCC250-18io1 MCC,MCD_250.pdf
MCC250-18io1
Виробник: IXYS
Description: THYRISTOR DUAL 1800V 450A
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DSEE30-12A DSEE30-12A.PDF
DSEE30-12A
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 3329 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1557.16 грн
30+980.62 грн
120+944.07 грн
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DSDI60-16A Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133
DSDI60-16A
Виробник: IXYS
Description: DIODE STANDARD 1600V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 316 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+863.19 грн
30+554.35 грн
120+518.41 грн
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MCC310-16io1 MCC310%2CMCD310.pdf
MCC310-16io1
Виробник: IXYS
Description: SCR DUAL 1600V 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
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VUO50-08NO3 VUO50.pdf
VUO50-08NO3
Виробник: IXYS
Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
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IXDN430MYI
IXDN430MYI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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VUO82-16NO7 VUO62%2CVU082.pdf
VUO82-16NO7
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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VBO130-08NO7 media?resourcetype=datasheets&itemid=32B57B06-D8AF-4BF1-AD92-374C314205BE&filename=Littelfuse-Power-Semiconductors-VBO130-08NO7-Datasheet
VBO130-08NO7
Виробник: IXYS
Description: BRIDGE RECT 1P 800V 122A PWS-E
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 122 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
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IXFT13N100 IXFT13N100%2C%2012N.pdf
IXFT13N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXDI402SI 99015.pdf
IXDI402SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FII40-06D FII40-06D.pdf
FII40-06D
Виробник: IXYS
Description: IGBT H BRIDGE 600V 40A I4PAK5
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MCC312-16io1 Littelfuse-Power-Semiconductors-MCC312-16io1-Datasheet?assetguid=e89527f6-52af-4349-a7ba-66bfa2dd339a
MCC312-16io1
Виробник: IXYS
Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
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DSA9-16F DSA9.pdf
DSA9-16F
Виробник: IXYS
Description: DIODE AVALANCHE 1.6KV 11A DO203
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IXDD409YI
IXDD409YI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXGH45N120 littelfuse_discrete_igbts_pt_ixgh45n120_datasheet.pdf.pdf
IXGH45N120
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
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IXGH60N60
IXGH60N60
Виробник: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
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IX6R11S3 DS99037.pdf
IX6R11S3
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
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MCC26-14io1B media?resourcetype=datasheets&itemid=db47a66a-a2da-403b-9630-c03f3e36ff6c&filename=Littelfuse-Power-Semiconductors-MCC26-14io1B-Datasheet
MCC26-14io1B
Виробник: IXYS
Description: DUL THYRIS MOD 800-2200V 19-320A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2144.78 грн
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