Продукція > IXYS > Всі товари виробника IXYS (20246) > Сторінка 4 з 338

Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 9 33 66 99 132 165 198 231 264 297 330 338  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
без ПДВ
VHF25-08IO7 IXYS L302.pdf Description: BRIDGE RECT SGL PHASE 800V
товар відсутній
IXBH42N170 IXBH42N170 IXYS littelfuse_discrete_igbts_bimosfet_ixb_42n170_datasheet.pdf.pdf Description: IGBT 1700V 80A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-247AD
Gate Charge: 188 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
товар відсутній
IXFR24N100 IXFR24N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr24n100_datasheet.pdf.pdf Description: MOSFET N-CH 1KV 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
VUO5012N03 IXYS VUO50.pdf Description: BRIDGE RECT 3 PHASE 1200V 58A
товар відсутній
IXTH24P20 IXTH24P20 IXYS littelfuse_discrete_mosfets_p-channel_ixt_24p20_datasheet.pdf.pdf Description: MOSFET P-CH 200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+762.8 грн
30+ 586.38 грн
VBE17-06NO7 IXYS media?resourcetype=datasheets&amp;itemid=f3f5350c-8be6-4e9c-b98f-d5ff3e319683&amp;filename=littelfuse%2520power%2520semiconductors%2520vbe17-06no7%2520datasheet.pdf Description: BRIDGE RECT 1P 600V 27A ECO-PAC1
Packaging: Bulk
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ECO-PAC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 27 A
Voltage - Forward (Vf) (Max) @ If: 2.09 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
IXGX50N60AU1 IXGX50N60AU1 IXYS 97513.pdf Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
DSP25-12A DSP25-12A IXYS L015.pdf Description: DIODE ARRAY GP 1200V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
на замовлення 1860 шт:
термін постачання 21-31 дні (днів)
1+390.29 грн
30+ 297.93 грн
120+ 255.36 грн
510+ 213.02 грн
1020+ 182.4 грн
DSP25-16A DSP25-16A IXYS L015.pdf Description: DIODE ARRAY GP 1600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)
1+388.86 грн
30+ 296.67 грн
120+ 254.29 грн
510+ 212.12 грн
1020+ 181.63 грн
2010+ 171.03 грн
DSP25-16AR DSP25-16AR IXYS L015.pdf Description: DIODE ARR GP 1600V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
товар відсутній
DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Description: DIODE MODULE 45V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 120 A
Current - Reverse Leakage @ Vr: 120 mA @ 45 V
товар відсутній
DSS2X160-01A DSS2X160-01A IXYS L143.pdf description Description: DIODE MODULE 100V 160A SOT227B
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Description: DIODE MODULE 100V 40A SOT227B
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
DSSK60-015A DSSK60-015A IXYS description Description: DIODE ARRAY SCHOTTKY 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 150 V
товар відсутній
DSSK80-0045B DSSK80-0045B IXYS DSSK80-0045B.pdf Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 40 A
Current - Reverse Leakage @ Vr: 30 mA @ 45 V
товар відсутній
IXCP10M45S IXCP10M45S IXYS 98704.pdf Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Part Status: Active
на замовлення 2588 шт:
термін постачання 21-31 дні (днів)
2+217.54 грн
10+ 188.05 грн
50+ 177.84 грн
100+ 144.65 грн
250+ 137.22 грн
500+ 123.13 грн
1000+ 102.14 грн
2500+ 97.04 грн
Мінімальне замовлення: 2
IXFH15N80Q IXFH15N80Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_15n80q_datasheet.pdf.pdf Description: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
товар відсутній
IXFH20N80Q IXFH20N80Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n80q_datasheet.pdf.pdf Description: MOSFET N-CH 800V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
IXFH26N60Q IXFH26N60Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n60q_datasheet.pdf.pdf description Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
IXFH52N30Q IXFH52N30Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
товар відсутній
IXFH80N20Q IXFH80N20Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n20q_datasheet.pdf.pdf Description: MOSFET N-CH 200V 80A TO247AD
товар відсутній
IXFK120N20 IXFK120N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A TO-264AA
товар відсутній
IXFK180N10 IXFK180N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfk180n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
товар відсутній
IXFK24N100 IXFK24N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n100_datasheet.pdf.pdf Description: MOSFET N-CH 1KV 24A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFK27N80 IXFK27N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
товар відсутній
IXFK34N80 IXFK34N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 34A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXFK90N20Q IXFK90N20Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_90n20q_datasheet.pdf.pdf Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFN120N20 IXFN120N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 120A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
товар відсутній
IXFN24N100 IXFN24N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn24n100_datasheet.pdf.pdf description Description: MOSFET N-CH 1KV 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFN26N90 IXFN26N90 IXYS 97526.pdf description Description: MOSFET N-CH 900V 26A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товар відсутній
IXFN60N60 IXFN60N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn60n60_datasheet.pdf.pdf description Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXFN80N50 IXFN80N50 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50_datasheet.pdf.pdf description Description: MOSFET N-CH 500V 80A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
товар відсутній
IXFR120N20 IXFR120N20 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr120n20_datasheet.pdf.pdf Description: MOSFET N-CH 200V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
товар відсутній
IXFR180N10 IXFR180N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 165A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
товар відсутній
IXFR44N60 IXFR44N60 IXYS Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товар відсутній
IXFT32N50Q IXFT32N50Q IXYS IXF(H,T)30N50Q, 32N50Q.pdf Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
товар відсутній
IXFT40N30Q IXFT40N30Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_40n30q_datasheet.pdf.pdf Description: MOSFET N-CH 300V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товар відсутній
IXFT52N30Q IXFT52N30Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
товар відсутній
IXFX34N80 IXFX34N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 34A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXFX44N60 IXFX44N60 IXYS 98611.pdf Description: MOSFET N-CH 600V 44A PLUS247
товар відсутній
IXFX90N20Q IXFX90N20Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_90n20q_datasheet.pdf.pdf Description: MOSFET N-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFX90N30 IXFX90N30 IXYS 98537.pdf Description: MOSFET N-CH 300V 90A PLUS247-3
товар відсутній
IXMS150PSI IXMS150PSI IXYS IXMS150PSI.pdf Description: IC REG CTRLR HALF-BRIDGE 24DIP
товар відсутній
IXTH10P50 IXTH10P50 IXYS IXTH10P50.pdf Description: MOSFET P-CH 500V 10A TO-247AD
товар відсутній
IXTH11P50 IXTH11P50 IXYS IXTx11P50_Rev2005.pdf Description: MOSFET P-CH 500V 11A TO247
на замовлення 2263 шт:
термін постачання 21-31 дні (днів)
1+801.19 грн
10+ 709.29 грн
100+ 599.06 грн
500+ 500.11 грн
1000+ 458.72 грн
IXTH7P50 IXTH7P50 IXYS IXTH7P50.pdf Description: MOSFET P-CH 500V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+1354.27 грн
IXTN21N100 IXTN21N100 IXYS 92808.pdf Description: MOSFET N-CH 1000V 21A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
товар відсутній
MUBW10-06A7 MUBW10-06A7 IXYS MUBW10-06A7.pdf Description: IGBT MODULE 600V 20A 85W E2
товар відсутній
MUBW10-12A7 IXYS MUBW10-12A7.pdf Description: IGBT MODULE 1200V 20A 105W E2
товар відсутній
MUBW25-12A7 IXYS MUBW25-12A7.pdf Description: IGBT MODULE 1200V 50A 225W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 900 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+6071.12 грн
IXTU01N100 IXTU01N100 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_01n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 100MA TO251
товар відсутній
VM0550-2F IXYS Description: MOSFET N-CH 100V 590A MODULE
товар відсутній
VMO580-02F VMO580-02F IXYS VMO580-02F.pdf Description: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
товар відсутній
DSA1-18D DSA1-18D IXYS DSA1.pdf Description: DIODE AVALANCHE 1.8KV 2.3A
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 2.3A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 7 A
Current - Reverse Leakage @ Vr: 700 µA @ 1800 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
1+346.92 грн
10+ 280.47 грн
100+ 226.91 грн
IXDD404PI IXDD404PI IXYS 99046.pdf Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD404SI IXDD404SI IXYS 99046.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD404SI-16 IXDD404SI-16 IXYS 99046.pdf Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408CI IXYS ixdd408.pdf Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408SI IXDD408SI IXYS ixdd408.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408YI IXDD408YI IXYS ixdd408.pdf Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
VHF25-08IO7 L302.pdf
Виробник: IXYS
Description: BRIDGE RECT SGL PHASE 800V
товар відсутній
IXBH42N170 littelfuse_discrete_igbts_bimosfet_ixb_42n170_datasheet.pdf.pdf
IXBH42N170
Виробник: IXYS
Description: IGBT 1700V 80A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.32 µs
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 42A
Supplier Device Package: TO-247AD
Gate Charge: 188 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 360 W
товар відсутній
IXFR24N100 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr24n100_datasheet.pdf.pdf
IXFR24N100
Виробник: IXYS
Description: MOSFET N-CH 1KV 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
VUO5012N03 VUO50.pdf
Виробник: IXYS
Description: BRIDGE RECT 3 PHASE 1200V 58A
товар відсутній
IXTH24P20 littelfuse_discrete_mosfets_p-channel_ixt_24p20_datasheet.pdf.pdf
IXTH24P20
Виробник: IXYS
Description: MOSFET P-CH 200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+762.8 грн
30+ 586.38 грн
VBE17-06NO7 media?resourcetype=datasheets&amp;itemid=f3f5350c-8be6-4e9c-b98f-d5ff3e319683&amp;filename=littelfuse%2520power%2520semiconductors%2520vbe17-06no7%2520datasheet.pdf
Виробник: IXYS
Description: BRIDGE RECT 1P 600V 27A ECO-PAC1
Packaging: Bulk
Package / Case: ECO-PAC1
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ECO-PAC1
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 27 A
Voltage - Forward (Vf) (Max) @ If: 2.09 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
товар відсутній
IXGX50N60AU1 97513.pdf
IXGX50N60AU1
Виробник: IXYS
Description: IGBT 600V 75A 300W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 4.8mJ (off)
Test Condition: 480V, 50A, 2.7Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товар відсутній
DSP25-12A L015.pdf
DSP25-12A
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
на замовлення 1860 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+390.29 грн
30+ 297.93 грн
120+ 255.36 грн
510+ 213.02 грн
1020+ 182.4 грн
DSP25-16A L015.pdf
DSP25-16A
Виробник: IXYS
Description: DIODE ARRAY GP 1600V 28A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+388.86 грн
30+ 296.67 грн
120+ 254.29 грн
510+ 212.12 грн
1020+ 181.63 грн
2010+ 171.03 грн
DSP25-16AR L015.pdf
DSP25-16AR
Виробник: IXYS
Description: DIODE ARR GP 1600V ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 28A
Supplier Device Package: ISOPLUS247™
Operating Temperature - Junction: -40°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 55 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
товар відсутній
DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Виробник: IXYS
Description: DIODE MODULE 45V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 120 A
Current - Reverse Leakage @ Vr: 120 mA @ 45 V
товар відсутній
DSS2X160-01A description L143.pdf
DSS2X160-01A
Виробник: IXYS
Description: DIODE MODULE 100V 160A SOT227B
на замовлення 28 шт:
термін постачання 21-31 дні (днів)
DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Виробник: IXYS
Description: DIODE MODULE 100V 40A SOT227B
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
DSSK60-015A description
DSSK60-015A
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 150 V
товар відсутній
DSSK80-0045B DSSK80-0045B.pdf
DSSK80-0045B
Виробник: IXYS
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 40 A
Current - Reverse Leakage @ Vr: 30 mA @ 45 V
товар відсутній
IXCP10M45S 98704.pdf
IXCP10M45S
Виробник: IXYS
Description: IC CURRENT REGULATOR TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Function: Current Regulator
Voltage - Input: 450V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Part Status: Active
на замовлення 2588 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+217.54 грн
10+ 188.05 грн
50+ 177.84 грн
100+ 144.65 грн
250+ 137.22 грн
500+ 123.13 грн
1000+ 102.14 грн
2500+ 97.04 грн
Мінімальне замовлення: 2
IXFH15N80Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_15n80q_datasheet.pdf.pdf
IXFH15N80Q
Виробник: IXYS
Description: MOSFET N-CH 800V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
товар відсутній
IXFH20N80Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_20n80q_datasheet.pdf.pdf
IXFH20N80Q
Виробник: IXYS
Description: MOSFET N-CH 800V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
IXFH26N60Q description littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n60q_datasheet.pdf.pdf
IXFH26N60Q
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товар відсутній
IXFH52N30Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf
IXFH52N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
товар відсутній
IXFH80N20Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh80n20q_datasheet.pdf.pdf
IXFH80N20Q
Виробник: IXYS
Description: MOSFET N-CH 200V 80A TO247AD
товар відсутній
IXFK120N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n20_datasheet.pdf.pdf
IXFK120N20
Виробник: IXYS
Description: MOSFET N-CH 200V 120A TO-264AA
товар відсутній
IXFK180N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfk180n10_datasheet.pdf.pdf
IXFK180N10
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
товар відсутній
IXFK24N100 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_24n100_datasheet.pdf.pdf
IXFK24N100
Виробник: IXYS
Description: MOSFET N-CH 1KV 24A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFK27N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_27n80_datasheet.pdf.pdf
IXFK27N80
Виробник: IXYS
Description: MOSFET N-CH 800V 27A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
товар відсутній
IXFK34N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf
IXFK34N80
Виробник: IXYS
Description: MOSFET N-CH 800V 34A TO-264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXFK90N20Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_90n20q_datasheet.pdf.pdf
IXFK90N20Q
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFN120N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn120n20_datasheet.pdf.pdf
IXFN120N20
Виробник: IXYS
Description: MOSFET N-CH 200V 120A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
товар відсутній
IXFN24N100 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn24n100_datasheet.pdf.pdf
IXFN24N100
Виробник: IXYS
Description: MOSFET N-CH 1KV 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
товар відсутній
IXFN26N90 description 97526.pdf
IXFN26N90
Виробник: IXYS
Description: MOSFET N-CH 900V 26A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
товар відсутній
IXFN60N60 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn60n60_datasheet.pdf.pdf
IXFN60N60
Виробник: IXYS
Description: MOSFET N-CH 600V 60A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXFN80N50 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50_datasheet.pdf.pdf
IXFN80N50
Виробник: IXYS
Description: MOSFET N-CH 500V 80A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V
товар відсутній
IXFR120N20 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr120n20_datasheet.pdf.pdf
IXFR120N20
Виробник: IXYS
Description: MOSFET N-CH 200V 105A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 60A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
товар відсутній
IXFR180N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr180n10_datasheet.pdf.pdf
IXFR180N10
Виробник: IXYS
Description: MOSFET N-CH 100V 165A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 90A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
товар відсутній
IXFR44N60
IXFR44N60
Виробник: IXYS
Description: MOSFET N-CH 600V 38A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
товар відсутній
IXFT32N50Q IXF(H,T)30N50Q, 32N50Q.pdf
IXFT32N50Q
Виробник: IXYS
Description: MOSFET N-CH 500V 32A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4925 pF @ 25 V
товар відсутній
IXFT40N30Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_40n30q_datasheet.pdf.pdf
IXFT40N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
товар відсутній
IXFT52N30Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30q_datasheet.pdf.pdf
IXFT52N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
товар відсутній
IXFX34N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_34n80_datasheet.pdf.pdf
IXFX34N80
Виробник: IXYS
Description: MOSFET N-CH 800V 34A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 17A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
товар відсутній
IXFX44N60 98611.pdf
IXFX44N60
Виробник: IXYS
Description: MOSFET N-CH 600V 44A PLUS247
товар відсутній
IXFX90N20Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_90n20q_datasheet.pdf.pdf
IXFX90N20Q
Виробник: IXYS
Description: MOSFET N-CH 200V 90A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товар відсутній
IXFX90N30 98537.pdf
IXFX90N30
Виробник: IXYS
Description: MOSFET N-CH 300V 90A PLUS247-3
товар відсутній
IXMS150PSI IXMS150PSI.pdf
IXMS150PSI
Виробник: IXYS
Description: IC REG CTRLR HALF-BRIDGE 24DIP
товар відсутній
IXTH10P50 IXTH10P50.pdf
IXTH10P50
Виробник: IXYS
Description: MOSFET P-CH 500V 10A TO-247AD
товар відсутній
IXTH11P50 IXTx11P50_Rev2005.pdf
IXTH11P50
Виробник: IXYS
Description: MOSFET P-CH 500V 11A TO247
на замовлення 2263 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+801.19 грн
10+ 709.29 грн
100+ 599.06 грн
500+ 500.11 грн
1000+ 458.72 грн
IXTH7P50 IXTH7P50.pdf
IXTH7P50
Виробник: IXYS
Description: MOSFET P-CH 500V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1354.27 грн
IXTN21N100 92808.pdf
IXTN21N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 21A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
товар відсутній
MUBW10-06A7 MUBW10-06A7.pdf
MUBW10-06A7
Виробник: IXYS
Description: IGBT MODULE 600V 20A 85W E2
товар відсутній
MUBW10-12A7 MUBW10-12A7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 20A 105W E2
товар відсутній
MUBW25-12A7 MUBW25-12A7.pdf
Виробник: IXYS
Description: IGBT MODULE 1200V 50A 225W E2
Packaging: Bulk
Package / Case: E2
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: E2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 900 µA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+6071.12 грн
IXTU01N100 littelfuse_discrete_mosfets_n-channel_standard_ixt_01n100_datasheet.pdf.pdf
IXTU01N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 100MA TO251
товар відсутній
VM0550-2F
Виробник: IXYS
Description: MOSFET N-CH 100V 590A MODULE
товар відсутній
VMO580-02F VMO580-02F.pdf
VMO580-02F
Виробник: IXYS
Description: MOSFET N-CH 200V 580A Y3-LI
Packaging: Bulk
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 430A, 10V
Vgs(th) (Max) @ Id: 4V @ 50mA
Supplier Device Package: Y3-Li
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 2750 nC @ 10 V
товар відсутній
DSA1-18D DSA1.pdf
DSA1-18D
Виробник: IXYS
Description: DIODE AVALANCHE 1.8KV 2.3A
Packaging: Bulk
Package / Case: Radial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Current - Average Rectified (Io): 2.3A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 7 A
Current - Reverse Leakage @ Vr: 700 µA @ 1800 V
на замовлення 230 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+346.92 грн
10+ 280.47 грн
100+ 226.91 грн
IXDD404PI 99046.pdf
IXDD404PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD404SI 99046.pdf
IXDD404SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD404SI-16 99046.pdf
IXDD404SI-16
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408CI ixdd408.pdf
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO220-5
Packaging: Tube
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-220-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408SI ixdd408.pdf
IXDD408SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
IXDD408YI ixdd408.pdf
IXDD408YI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 25V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 14ns, 15ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 8A, 8A
Part Status: Obsolete
DigiKey Programmable: Not Verified
товар відсутній
Обрати Сторінку:   [  << Попередня Сторінка ]  1 2 3 4 5 6 7 8 9 33 66 99 132 165 198 231 264 297 330 338  [ Наступна Сторінка >> ]