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IXFV22N60PS IXFV22N60PS IXYS Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXFC22N60P IXFC22N60P IXYS Description: MOSFET N-CH 600V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXFV26N60P IXFV26N60P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3 Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV26N60PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV30N60P IXFV30N60P IXYS 99316.pdf Description: MOSFET N-CH 600V 30A PLUS220
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IXFV30N60PS IXYS 99316.pdf Description: MOSFET N-CH 600V 30A PLUS220-SMD
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IXFH30N60P IXFH30N60P IXYS 99316.pdf Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+764.38 грн
30+415.23 грн
120+391.70 грн
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IXFT30N60P IXFT30N60P IXYS Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXFC30N60P IXFC30N60P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IXFR30N60P IXFR30N60P IXYS 99341.pdf Description: MOSFET N-CH 600V 15A ISOPLUS247
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IXFH36N60P IXFH36N60P IXYS 99383.pdf Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 739 шт:
термін постачання 21-31 дні (днів)
1+498.08 грн
30+475.81 грн
120+468.96 грн
510+425.34 грн
В кошику  од. на суму  грн.
IXFR36N60P IXFR36N60P IXYS 99395.pdf Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
1+1135.88 грн
30+675.05 грн
120+583.25 грн
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IXFK48N60P IXFK48N60P IXYS 99375.pdf Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1388.21 грн
25+856.66 грн
100+753.28 грн
В кошику  од. на суму  грн.
IXFN48N60P IXFN48N60P IXYS description Description: MOSFET N-CH 600V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
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IXFX64N60P IXFX64N60P IXYS 99442.pdf Description: MOSFET N-CH 600V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
1+1330.68 грн
30+993.59 грн
120+947.99 грн
В кошику  од. на суму  грн.
IXFR64N60P IXFR64N60P IXYS DS99441FIXFR64N60P.pdf Description: MOSFET N-CH 600V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 32A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
1+1439.17 грн
30+872.54 грн
120+788.42 грн
В кошику  од. на суму  грн.
IXFK64N60P IXFK64N60P IXYS 99442.pdf Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
1+1568.21 грн
25+1063.32 грн
100+1025.99 грн
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MCC26-14io8B MCC26-14io8B IXYS Littelfuse-Power-Semiconductors-MCC26-14io8B-Datasheet?assetguid=a38f6b85-4335-4337-a329-8a59637f0eca Description: SCR MODULE 1.4KV 50A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
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DSDI60-18A DSDI60-18A IXYS Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133 Description: DIODE STANDARD 1800V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1800 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+910.68 грн
30+674.65 грн
120+628.92 грн
510+578.21 грн
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IXDF502PI IXDF502PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDF502SIAT/R IXDF502SIAT/R IXYS DS99573.pdf Description: IC MOSF DRIVER FAST DUAL 8-SOIC
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IXDF502D1T/R IXDF502D1T/R IXYS DS99573.pdf Description: IC MOSF DRIVER FAST DUAL 6-DFN
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IXDI502PI IXDI502PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDI502SIAT/R IXDI502SIAT/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI502D1T/R IXDI502D1T/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
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IXDN502PI IXDN502PI IXYS Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDN502SIAT/R IXDN502SIAT/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN502D1T/R IXDN502D1T/R IXYS Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF502SIAT/R IXDF502SIAT/R IXYS DS99573.pdf Description: IC MOSF DRIVER FAST DUAL 8-SOIC
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IXDF502D1T/R IXDF502D1T/R IXYS DS99573.pdf Description: IC MOSF DRIVER FAST DUAL 6-DFN
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IXDI502SIAT/R IXDI502SIAT/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI502D1T/R IXDI502D1T/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 6DFN
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IXDN502SIAT/R IXDN502SIAT/R IXYS DS99573.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXTA8N50P IXTA8N50P IXYS littelfuse-discrete-mosfets-ixt-8n50p-datasheet?assetguid=e0815c1f-f166-4ff5-ad48-fb7fddef29e5 Description: MOSFET N-CH 500V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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VBO13-16AO2 VBO13-16AO2 IXYS VBO13-08NO2.pdf Description: BRIDGE RECT 1P 1.6KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXFN150N15 IXFN150N15 IXYS description Description: MOSFET N-CH 150V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
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IXDI409SI IXDI409SI IXYS 99054.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXFV52N30P IXFV52N30P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
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IXGT32N170 T&R IXGT32N170 T&R IXYS 98941.pdf Description: IGBT 1700V 75A 350W TO268
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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IXGT32N170-TRL IXGT32N170-TRL IXYS littelfuse_discrete_igbts_npt_ixg_32n170_datasheet.pdf.pdf Description: IGBT 1700V 75A 350W TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
1+1887.93 грн
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IXGT32N170 T&R IXGT32N170 T&R IXYS 98941.pdf Description: IGBT 1700V 75A 350W TO268
на замовлення 1237 шт:
термін постачання 21-31 дні (днів)
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS littelfuse-discrete-igbts-ixg-40n120b2d1-datasheet?assetguid=c199fb56-2f28-43c0-9c3b-0c261a80b75f Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/290ns
Switching Energy: 4.5mJ (on), 3mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
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IX6R11P7 IXYS DS99037.pdf Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 35V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-PDIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Obsolete
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DSA75-16B DSA75-16B IXYS DS75_DSI75_DSA75_DSAI75.pdf Description: DIODE AVALANCHE 1.6KV 110A DO203
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DSAI75-16B DSAI75-16B IXYS DS75_DSI75_DSA75_DSAI75.pdf Description: DIODE AVALANCHE 1.6KV 110A DO203
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MCC500-16io1 IXYS Mxx500-1xIO1.pdf Description: THYRISTOR DIODE MOD 1600V M##500
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IXDN404SIA IXDN404SIA IXYS Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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VW2X60-14IO1 IXYS VW2x60-14io1.pdf Description: AC CONTROLL MODULE 1400V 60A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: 2-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 4 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 43 A
Voltage - Off State: 1.4 kV
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+3039.43 грн
10+2608.21 грн
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MCC310-18io1 IXYS MCC310,MCD310.pdf Description: THYRISTOR DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+11769.78 грн
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MCC250-16io1 MCC250-16io1 IXYS MCC,MCD_250.pdf Description: MOD THYRISTOR DUAL 1600V Y2-DCB
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IXTN320N10T IXTN320N10T IXYS Description: MOSFET N-CH 100V 320A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
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IXGH15N120CD1 IXGH15N120CD1 IXYS Description: IGBT 1200V 30A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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MCC161-20io1 MCC161-20io1 IXYS MCC161-20io1.pdf Description: SCR 175A 2000V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2 kV
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+10832.80 грн
10+9973.95 грн
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IXRH40N120 IXRH40N120 IXYS IXRH40N120.pdf Description: IGBT 1200V 55A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 3mJ (on), 700µJ (off)
Test Condition: 600V, 35A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
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MII400-12E4 IXYS MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf Description: IGBT MOD 1200V 420A 1700W Y3LI
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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MCC310-14io1 IXYS MCC310,MCD310.pdf Description: MOD THYRISTOR DUAL 1400V Y2-DCB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.4 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+11243.75 грн
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VVZB120-16IO2 IXYS VVZB120.pdf Description: SCR MODULE 1.6KV V2-PAK
Packaging: Bulk
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
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MCD162-16io1 MCD162-16io1 IXYS Littelfuse-Power-Semiconductors-MCD162-16io1-Datasheet?assetguid=CBF01ADB-90D3-4133-B0C6-4DFDEBC502AC Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
1+4771.20 грн
12+3486.76 грн
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CS19-08ho1 CS19-08ho1 IXYS media?resourcetype=datasheets&itemid=d3d77e7a-0941-46af-ae2e-9d1d6ea11de5&filename=Littelfuse-Power-Semiconductors-CS19-12ho1-Datasheet Description: SCR 800V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
4+95.34 грн
50+73.51 грн
Мінімальне замовлення: 4
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CS19-08ho1S CS19-08ho1S IXYS CS19-08ho1.pdf Description: THYRISTOR PHASE 800V TO-263AB
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IXFV22N60PS
IXFV22N60PS
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXFC22N60P
IXFC22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 12A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXFV26N60P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3
IXFV26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV26N60PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV30N60P 99316.pdf
IXFV30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS220
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IXFV30N60PS 99316.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS220-SMD
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IXFH30N60P 99316.pdf
IXFH30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+764.38 грн
30+415.23 грн
120+391.70 грн
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IXFT30N60P
IXFT30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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IXFC30N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr30n60p_datasheet.pdf.pdf
IXFC30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IXFR30N60P 99341.pdf
IXFR30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 15A ISOPLUS247
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IXFH36N60P 99383.pdf
IXFH36N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 739 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+498.08 грн
30+475.81 грн
120+468.96 грн
510+425.34 грн
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IXFR36N60P 99395.pdf
IXFR36N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 261 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1135.88 грн
30+675.05 грн
120+583.25 грн
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IXFK48N60P 99375.pdf
IXFK48N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1388.21 грн
25+856.66 грн
100+753.28 грн
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IXFN48N60P description
IXFN48N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
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IXFX64N60P 99442.pdf
IXFX64N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 64A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 769 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1330.68 грн
30+993.59 грн
120+947.99 грн
В кошику  од. на суму  грн.
IXFR64N60P DS99441FIXFR64N60P.pdf
IXFR64N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 36A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 32A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1439.17 грн
30+872.54 грн
120+788.42 грн
В кошику  од. на суму  грн.
IXFK64N60P 99442.pdf
IXFK64N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 64A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
на замовлення 424 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1568.21 грн
25+1063.32 грн
100+1025.99 грн
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MCC26-14io8B Littelfuse-Power-Semiconductors-MCC26-14io8B-Datasheet?assetguid=a38f6b85-4335-4337-a329-8a59637f0eca
MCC26-14io8B
Виробник: IXYS
Description: SCR MODULE 1.4KV 50A TO-240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
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DSDI60-18A Littelfuse-Power-Semiconductors-DSDI60-18A-Datasheet?assetguid=8d7ea8e6-2ef8-4cef-a969-dabf5d801133
DSDI60-18A
Виробник: IXYS
Description: DIODE STANDARD 1800V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1800 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+910.68 грн
30+674.65 грн
120+628.92 грн
510+578.21 грн
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IXDF502PI
IXDF502PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDF502SIAT/R DS99573.pdf
IXDF502SIAT/R
Виробник: IXYS
Description: IC MOSF DRIVER FAST DUAL 8-SOIC
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IXDF502D1T/R DS99573.pdf
IXDF502D1T/R
Виробник: IXYS
Description: IC MOSF DRIVER FAST DUAL 6-DFN
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IXDI502PI
IXDI502PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDI502SIAT/R DS99573.pdf
IXDI502SIAT/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI502D1T/R DS99573.pdf
IXDI502D1T/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
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IXDN502PI
IXDN502PI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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IXDN502SIAT/R DS99573.pdf
IXDN502SIAT/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDN502D1T/R
IXDN502D1T/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 6-DFN (4x5)
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXDF502SIAT/R DS99573.pdf
IXDF502SIAT/R
Виробник: IXYS
Description: IC MOSF DRIVER FAST DUAL 8-SOIC
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IXDF502D1T/R DS99573.pdf
IXDF502D1T/R
Виробник: IXYS
Description: IC MOSF DRIVER FAST DUAL 6-DFN
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IXDI502SIAT/R DS99573.pdf
IXDI502SIAT/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXDI502D1T/R DS99573.pdf
IXDI502D1T/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 6DFN
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IXDN502SIAT/R DS99573.pdf
IXDN502SIAT/R
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 30V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 7.5ns, 6.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IXTA8N50P littelfuse-discrete-mosfets-ixt-8n50p-datasheet?assetguid=e0815c1f-f166-4ff5-ad48-fb7fddef29e5
IXTA8N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
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VBO13-16AO2 VBO13-08NO2.pdf
VBO13-16AO2
Виробник: IXYS
Description: BRIDGE RECT 1P 1.6KV 18A FO-A
Packaging: Bulk
Package / Case: 4-Square, FO-A
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Avalanche
Supplier Device Package: FO-A
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 18 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 55 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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IXFN150N15 description
IXFN150N15
Виробник: IXYS
Description: MOSFET N-CH 150V 150A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 75A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9100 pF @ 25 V
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IXDI409SI 99054.pdf
IXDI409SI
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
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IXFV52N30P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh52n30p_datasheet.pdf.pdf
IXFV52N30P
Виробник: IXYS
Description: MOSFET N-CH 300V 52A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
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IXGT32N170 T&R 98941.pdf
IXGT32N170 T&R
Виробник: IXYS
Description: IGBT 1700V 75A 350W TO268
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
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IXGT32N170-TRL littelfuse_discrete_igbts_npt_ixg_32n170_datasheet.pdf.pdf
IXGT32N170-TRL
Виробник: IXYS
Description: IGBT 1700V 75A 350W TO268
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 32A
Supplier Device Package: TO-268AA
IGBT Type: NPT
Td (on/off) @ 25°C: 45ns/270ns
Switching Energy: 11mJ (off)
Test Condition: 1020V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 350 W
на замовлення 1784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1887.93 грн
10+1316.37 грн
100+1081.11 грн
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IXGT32N170 T&R 98941.pdf
IXGT32N170 T&R
Виробник: IXYS
Description: IGBT 1700V 75A 350W TO268
на замовлення 1237 шт:
термін постачання 21-31 дні (днів)
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IXGH40N120B2D1 littelfuse-discrete-igbts-ixg-40n120b2d1-datasheet?assetguid=c199fb56-2f28-43c0-9c3b-0c261a80b75f
IXGH40N120B2D1
Виробник: IXYS
Description: IGBT PT 1200V 75A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/290ns
Switching Energy: 4.5mJ (on), 3mJ (off)
Test Condition: 960V, 40A, 2Ohm, 15V
Gate Charge: 138 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 380 W
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IX6R11P7 DS99037.pdf
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 35V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-PDIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 6V, 9.6V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Obsolete
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DSA75-16B DS75_DSI75_DSA75_DSAI75.pdf
DSA75-16B
Виробник: IXYS
Description: DIODE AVALANCHE 1.6KV 110A DO203
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DSAI75-16B DS75_DSI75_DSA75_DSAI75.pdf
DSAI75-16B
Виробник: IXYS
Description: DIODE AVALANCHE 1.6KV 110A DO203
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MCC500-16io1 Mxx500-1xIO1.pdf
Виробник: IXYS
Description: THYRISTOR DIODE MOD 1600V M##500
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IXDN404SIA
IXDN404SIA
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 16ns, 13ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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VW2X60-14IO1 VW2x60-14io1.pdf
Виробник: IXYS
Description: AC CONTROLL MODULE 1400V 60A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: 2-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 4 SCRs
Current - On State (It (AV)) (Max): 27 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 43 A
Voltage - Off State: 1.4 kV
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3039.43 грн
10+2608.21 грн
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MCC310-18io1 MCC310,MCD310.pdf
Виробник: IXYS
Description: THYRISTOR DIODE MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.8 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11769.78 грн
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MCC250-16io1 MCC,MCD_250.pdf
MCC250-16io1
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1600V Y2-DCB
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IXTN320N10T
IXTN320N10T
Виробник: IXYS
Description: MOSFET N-CH 100V 320A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
Power Dissipation (Max): 680W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
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IXGH15N120CD1
IXGH15N120CD1
Виробник: IXYS
Description: IGBT 1200V 30A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 1.05mJ (off)
Test Condition: 960V, 15A, 10Ohm, 15V
Gate Charge: 69 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 150 W
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MCC161-20io1 MCC161-20io1.pdf
MCC161-20io1
Виробник: IXYS
Description: SCR 175A 2000V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2 kV
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10832.80 грн
10+9973.95 грн
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IXRH40N120 IXRH40N120.pdf
IXRH40N120
Виробник: IXYS
Description: IGBT 1200V 55A 300W TO247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 3mJ (on), 700µJ (off)
Test Condition: 600V, 35A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 300 W
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MII400-12E4 MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf
Виробник: IXYS
Description: IGBT MOD 1200V 420A 1700W Y3LI
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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MCC310-14io1 MCC310,MCD310.pdf
Виробник: IXYS
Description: MOD THYRISTOR DUAL 1400V Y2-DCB
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.4 kV
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+11243.75 грн
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VVZB120-16IO2 VVZB120.pdf
Виробник: IXYS
Description: SCR MODULE 1.6KV V2-PAK
Packaging: Bulk
Package / Case: V2-PAK
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 750A @ 50MHz
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Current - On State (It (AV)) (Max): 120 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - Off State: 1.6 kV
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MCD162-16io1 Littelfuse-Power-Semiconductors-MCD162-16io1-Datasheet?assetguid=CBF01ADB-90D3-4133-B0C6-4DFDEBC502AC
MCD162-16io1
Виробник: IXYS
Description: SCR MODULE 1.6KV 300A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4771.20 грн
12+3486.76 грн
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CS19-08ho1 media?resourcetype=datasheets&itemid=d3d77e7a-0941-46af-ae2e-9d1d6ea11de5&filename=Littelfuse-Power-Semiconductors-CS19-12ho1-Datasheet
CS19-08ho1
Виробник: IXYS
Description: SCR 800V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 180A
Current - On State (It (AV)) (Max): 19 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 mA
Supplier Device Package: TO-220-3
Part Status: Active
Current - On State (It (RMS)) (Max): 29 A
Voltage - Off State: 800 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.34 грн
50+73.51 грн
Мінімальне замовлення: 4
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CS19-08ho1S CS19-08ho1.pdf
CS19-08ho1S
Виробник: IXYS
Description: THYRISTOR PHASE 800V TO-263AB
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