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IXTQ14N60P IXTQ14N60P IXYS littelfuse-discrete-mosfets-ixt-14n60p-datasheet?assetguid=3b19c3e9-2045-4609-909f-d45afea45cd6 Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTV18N60P IXTV18N60P IXYS littelfuse-discrete-mosfets-ixtq18n60p-datasheet?assetguid=7768d8d9-b3a1-4604-8e3b-4a6d0f09a59c Description: MOSFET N-CH 600V 18A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXTV18N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 18A PLUS-220SMD
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
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IXTV22N60P IXTV22N60P IXYS littelfuse-discrete-mosfets-ixtq22n60p-datasheet?assetguid=8d00b5e6-1c77-403d-8c29-c61916413363 Description: MOSFET N-CH 600V 22A PLUS220
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
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IXTV22N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 22A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXTQ22N60P IXTQ22N60P IXYS media?resourcetype=datasheets&itemid=8D00B5E6-1C77-403D-8C29-C61916413363&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTQ22N60P-Datasheet.PDF Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 782 шт:
термін постачання 21-31 дні (днів)
1+689.89 грн
30+390.73 грн
60+358.09 грн
120+310.30 грн
510+269.00 грн
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IXTV26N60P IXTV26N60P IXYS littelfuse-discrete-mosfets-ixtq26n60p-datasheet?assetguid=62ef5b34-8682-48b5-a08e-96eac035f200 Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXTV26N60PS IXYS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
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IXTH26N60P IXTH26N60P IXYS media?resourcetype=datasheets&itemid=C57E78F4-B7FB-4218-9DF9-D683FAEDB385&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH26N60P-Datasheet.PDF Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+862.37 грн
30+495.89 грн
60+456.09 грн
120+396.60 грн
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IXTQ26N60P IXTQ26N60P IXYS littelfuse-discrete-mosfets-ixtq26n60p-datasheet?assetguid=62ef5b34-8682-48b5-a08e-96eac035f200 Description: MOSFET N-CH 600V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXTT26N60P IXTT26N60P IXYS media?resourcetype=datasheets&itemid=D99747F7-FEFD-4B70-8919-A0F934C7228B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTT26N60P-Datasheet.PDF Description: MOSFET N-CH 600V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTV30N60P IXTV30N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A PLUS220
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IXTV30N60PS IXYS littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab Description: MOSFET N-CH 600V 30A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXTH30N60P IXTH30N60P IXYS littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+913.79 грн
30+530.86 грн
60+489.32 грн
120+426.44 грн
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IXTQ30N60P IXTQ30N60P IXYS littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
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IXTT30N60P IXTT30N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXFP12N50P IXFP12N50P IXYS littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0 Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA12N50P IXFA12N50P IXYS littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0 Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA16N50P IXFA16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851 Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
300+174.01 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH16N50P IXFH16N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851 Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+554.61 грн
30+308.68 грн
60+281.72 грн
120+243.11 грн
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IXFC16N50P IXFC16N50P IXYS 99411.pdf Description: MOSFET N-CH 500V 10A ISOPLUS220
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IXFV22N50P IXYS Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXFV22N50PS IXYS Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXFV26N50P IXFV26N50P IXYS littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f Description: MOSFET N-CH 500V 26A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXFV26N50PS IXYS littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXFH26N50P IXFH26N50P IXYS littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
1+750.81 грн
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IXFC26N50P IXFC26N50P IXYS Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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 Мінімальне замовлення: 50 шт
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IXFV30N50P IXFV30N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 30A PLUS220
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IXFV30N50PS IXYS Description: MOSFET N-CH 500V 30A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV36N50P IXFV36N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXFV36N50PS IXYS Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXFH36N50P IXFH36N50P IXYS DS99364FIXFHFTFV36N50PS.pdf Description: MOSFET N-CH 500V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
1+938.32 грн
30+545.34 грн
60+502.70 грн
120+438.14 грн
510+392.06 грн
В кошику  од. на суму  грн.
IXFT36N50P IXFT36N50P IXYS DS99364FIXFHFTFV36N50PS.pdf Description: MOSFET N-CH 500V 36A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 636 шт:
термін постачання 21-31 дні (днів)
1+1049.08 грн
30+615.79 грн
60+568.86 грн
120+496.83 грн
510+453.34 грн
В кошику  од. на суму  грн.
IXFC36N50P IXFC36N50P IXYS Description: MOSFET N-CH 500V 19A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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 Мінімальне замовлення: 50 шт
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IXFR36N50P IXFR36N50P IXYS Description: MOSFET N-CH 500V 19A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXFT44N50P IXFT44N50P IXYS DS99366FIXFHFTFK44N50P.pdf Description: MOSFET N-CH 500V 44A TO268
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IXFR44N50P IXFR44N50P IXYS 99319.pdf Description: MOSFET N-CH 500V 24A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 255 шт:
термін постачання 21-31 дні (днів)
1+1338.65 грн
30+802.80 грн
60+744.97 грн
120+653.53 грн
В кошику  од. на суму  грн.
IXFX64N50P IXFX64N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-64N50P-Datasheet.PDF?assetguid=8DE003F7-C51B-40E5-9C92-5B875DE95D4C Description: MOSFET N-CH 500V 64A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFR64N50P IXFR64N50P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR64N50P-Datasheet.PDF?assetguid=7A911174-2320-4791-A535-C28786C08C34 Description: MOSFET N-CH 500V 35A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+1679.64 грн
30+1027.57 грн
В кошику  од. на суму  грн.
IXFX80N50P IXFX80N50P IXYS 99437.pdf Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
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IXFK80N50P IXFK80N50P IXYS 99437.pdf Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
1+1927.27 грн
25+1216.45 грн
100+1064.88 грн
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IXFP10N60P IXFP10N60P IXYS 171448752littelfusediscretemosfetsnchannelhiperfetsix.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
300+140.17 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP14N60P IXFP14N60P IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFA14N60P IXFA14N60P IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
1+484.19 грн
10+313.89 грн
50+248.66 грн
100+213.67 грн
В кошику  од. на суму  грн.
IXFH14N60P IXFH14N60P IXYS littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30 Description: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFC14N60P IXFC14N60P IXYS Description: MOSFET N-CH 600V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFV18N60P IXFV18N60P IXYS Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFV18N60PS IXYS Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFH18N60P IXFH18N60P IXYS 99390.pdf Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
1+515.05 грн
30+286.61 грн
120+240.60 грн
510+195.83 грн
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IXFV22N60P IXFV22N60P IXYS Description: MOSFET N-CH 600V 22A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXFV22N60PS IXFV22N60PS IXYS Description: MOSFET N-CH 600V 22A PLUS-220SMD
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
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IXFC22N60P IXFC22N60P IXYS Description: MOSFET N-CH 600V 12A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXFV26N60P IXFV26N60P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3 Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV26N60PS IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 26A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXFT26N60P IXFT26N60P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3 Description: MOSFET N-CH 600V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFV30N60P IXFV30N60P IXYS 99316.pdf Description: MOSFET N-CH 600V 30A PLUS220
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 Мінімальне замовлення: 50 шт
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IXFV30N60PS IXYS Description: MOSFET N-CH 600V 30A PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXFH30N60P IXFH30N60P IXYS 99316.pdf Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
1+918.54 грн
30+533.91 грн
60+492.19 грн
120+428.97 грн
В кошику  од. на суму  грн.
IXFT30N60P IXFT30N60P IXYS Description: MOSFET N-CH 600V 30A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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 Мінімальне замовлення: 30 шт
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IXFC30N60P IXFC30N60P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 15A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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 Мінімальне замовлення: 100 шт
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IXTQ14N60P littelfuse-discrete-mosfets-ixt-14n60p-datasheet?assetguid=3b19c3e9-2045-4609-909f-d45afea45cd6
IXTQ14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTV18N60P littelfuse-discrete-mosfets-ixtq18n60p-datasheet?assetguid=7768d8d9-b3a1-4604-8e3b-4a6d0f09a59c
IXTV18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXTV18N60PS littelfuse_discrete_mosfets_n-channel_standard_ixtq18n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS-220SMD
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
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IXTV22N60P littelfuse-discrete-mosfets-ixtq22n60p-datasheet?assetguid=8d00b5e6-1c77-403d-8c29-c61916413363
IXTV22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS220
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
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IXTV22N60PS littelfuse_discrete_mosfets_n-channel_standard_ixtq22n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXTQ22N60P media?resourcetype=datasheets&itemid=8D00B5E6-1C77-403D-8C29-C61916413363&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTQ22N60P-Datasheet.PDF
IXTQ22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 22A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 782 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+689.89 грн
30+390.73 грн
60+358.09 грн
120+310.30 грн
510+269.00 грн
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IXTV26N60P littelfuse-discrete-mosfets-ixtq26n60p-datasheet?assetguid=62ef5b34-8682-48b5-a08e-96eac035f200
IXTV26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXTV26N60PS littelfuse_discrete_mosfets_n-channel_standard_ixth26n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
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IXTH26N60P media?resourcetype=datasheets&itemid=C57E78F4-B7FB-4218-9DF9-D683FAEDB385&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH26N60P-Datasheet.PDF
IXTH26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+862.37 грн
30+495.89 грн
60+456.09 грн
120+396.60 грн
В кошику  од. на суму  грн.
IXTQ26N60P littelfuse-discrete-mosfets-ixtq26n60p-datasheet?assetguid=62ef5b34-8682-48b5-a08e-96eac035f200
IXTQ26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXTT26N60P media?resourcetype=datasheets&itemid=D99747F7-FEFD-4B70-8919-A0F934C7228B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTT26N60P-Datasheet.PDF
IXTT26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTV30N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
IXTV30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS220
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IXTV30N60PS littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
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IXTH30N60P littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab
IXTH30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+913.79 грн
30+530.86 грн
60+489.32 грн
120+426.44 грн
В кошику  од. на суму  грн.
IXTQ30N60P littelfuse-discrete-mosfets-ixt-30n60p-datasheet?assetguid=d66c982f-8d20-456b-b7b1-9481824597ab
IXTQ30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
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IXTT30N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
IXTT30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXFP12N50P littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0
IXFP12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA12N50P littelfuse-discrete-mosfets-ixf-12n50p-datasheet?assetguid=85deb97d-761a-4960-9e8d-233ab701f0e0
IXFA12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFA16N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851
IXFA16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+174.01 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFH16N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-16N50P-Datasheet.PDF?assetguid=BB00D7C9-0646-4C67-89CE-480FB9520851
IXFH16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+554.61 грн
30+308.68 грн
60+281.72 грн
120+243.11 грн
В кошику  од. на суму  грн.
IXFC16N50P 99411.pdf
IXFC16N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 10A ISOPLUS220
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IXFV22N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXFV22N50PS
Виробник: IXYS
Description: MOSFET N-CH 500V 22A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXFV26N50P littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f
IXFV26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXFV26N50PS littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f
Виробник: IXYS
Description: MOSFET N-CH 500V 26A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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IXFH26N50P littelfuse-discrete-mosfets-ixfh26n50p-datasheet?assetguid=50ccf495-5282-4c52-b8c5-535f228f328f
IXFH26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+750.81 грн
В кошику  од. на суму  грн.
IXFC26N50P
IXFC26N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 15A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 13A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
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IXFV30N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n50p_datasheet.pdf.pdf
IXFV30N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS220
товару немає в наявності
Мінімальне замовлення: 50 шт
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IXFV30N50PS
Виробник: IXYS
Description: MOSFET N-CH 500V 30A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
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IXFV36N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n50p_datasheet.pdf.pdf
IXFV36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXFV36N50PS
Виробник: IXYS
Description: MOSFET N-CH 500V 36A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS-220SMD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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IXFH36N50P DS99364FIXFHFTFV36N50PS.pdf
IXFH36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+938.32 грн
30+545.34 грн
60+502.70 грн
120+438.14 грн
510+392.06 грн
В кошику  од. на суму  грн.
IXFT36N50P DS99364FIXFHFTFV36N50PS.pdf
IXFT36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 36A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
на замовлення 636 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1049.08 грн
30+615.79 грн
60+568.86 грн
120+496.83 грн
510+453.34 грн
В кошику  од. на суму  грн.
IXFC36N50P
IXFC36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 19A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXFR36N50P
IXFR36N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 19A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
товару немає в наявності
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IXFT44N50P DS99366FIXFHFTFK44N50P.pdf
IXFT44N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO268
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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IXFR44N50P 99319.pdf
IXFR44N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 24A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 255 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1338.65 грн
30+802.80 грн
60+744.97 грн
120+653.53 грн
В кошику  од. на суму  грн.
IXFX64N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-64N50P-Datasheet.PDF?assetguid=8DE003F7-C51B-40E5-9C92-5B875DE95D4C
IXFX64N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 64A PLUS247-3
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 830W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFR64N50P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFR64N50P-Datasheet.PDF?assetguid=7A911174-2320-4791-A535-C28786C08C34
IXFR64N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 35A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1679.64 грн
30+1027.57 грн
В кошику  од. на суму  грн.
IXFX80N50P 99437.pdf
IXFX80N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
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IXFK80N50P 99437.pdf
IXFK80N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1927.27 грн
25+1216.45 грн
100+1064.88 грн
В кошику  од. на суму  грн.
IXFP10N60P 171448752littelfusediscretemosfetsnchannelhiperfetsix.pdf
IXFP10N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
300+140.17 грн
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP14N60P littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFP14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFA14N60P littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFA14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+484.19 грн
10+313.89 грн
50+248.66 грн
100+213.67 грн
В кошику  од. на суму  грн.
IXFH14N60P littelfuse-discrete-mosfets-ixf-14n60p-datasheet?assetguid=9b66dd8c-b998-4e01-b450-afadebd1db30
IXFH14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 14A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFC14N60P
IXFC14N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 8A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: ISOPLUS220™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXFV18N60P
IXFV18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXFV18N60PS
Виробник: IXYS
Description: MOSFET N-CH 600V 18A PLUS-220SMD
Packaging: Tube
Package / Case: PLUS-220SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: PLUS-220SMD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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В кошику  од. на суму  грн.
IXFH18N60P 99390.pdf
IXFH18N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 18A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 632 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+515.05 грн
30+286.61 грн
120+240.60 грн
510+195.83 грн
В кошику  од. на суму  грн.
IXFV22N60P
IXFV22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS220
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3, Short Tab
Packaging: Tube
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IXFV22N60PS
IXFV22N60PS
Виробник: IXYS
Description: MOSFET N-CH 600V 22A PLUS-220SMD
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
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IXFC22N60P
IXFC22N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 12A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXFV26N60P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3
IXFV26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS220
Packaging: Tube
Package / Case: TO-220-3, Short Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: PLUS220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
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IXFV26N60PS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh26n60p_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 26A PLUS-220SMD
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 460W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
товару немає в наявності
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IXFT26N60P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3
IXFT26N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 26A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFV30N60P 99316.pdf
IXFV30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS220
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXFV30N60PS
Виробник: IXYS
Description: MOSFET N-CH 600V 30A PLUS-220SMD
Supplier Device Package: PLUS-220SMD
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PLUS-220SMD
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXFH30N60P 99316.pdf
IXFH30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
на замовлення 252 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+918.54 грн
30+533.91 грн
60+492.19 грн
120+428.97 грн
В кошику  од. на суму  грн.
IXFT30N60P
IXFT30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 30A TO268
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
IXFC30N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr30n60p_datasheet.pdf.pdf
IXFC30N60P
Виробник: IXYS
Description: MOSFET N-CH 600V 15A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
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