| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VUO60-16NO3 | IXYS |
 Description: BRIDGE RECT 3P 1.6KV 72A FO-F-BPackaging: Box Package / Case: FO-F-B Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: FO-F-B Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 72 A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 300 µA @ 1600 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||||||
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IXGH32N170A | IXYS |
Description: IGBT NPT 1700V 32A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/260ns Switching Energy: 1.5mJ (off) Test Condition: 850V, 32A, 2.7Ohm, 15V Gate Charge: 155 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 110 A Power - Max: 350 W |
на замовлення 765 шт: термін постачання 21-31 дні (днів) |
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| VUE75-12NO7 | IXYS |
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1 |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | |||||||||||||||||||
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ME0500-06DA | IXYS |
Description: DIODE GEN PURP 600V 514A Y4-M6 Packaging: Bulk Package / Case: Y4-M6 Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 514A Supplier Device Package: Y4-M6 Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A Current - Reverse Leakage @ Vr: 24 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXFN27N80 | IXYS |
Description: MOSFET N-CH 800V 27A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXFX55N50F | IXYS |
Description: MOSFET N-CH 500V 55A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS247™-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VU068-08N07 | IXYS |
Description: BRIDGE RECT 3P 800V 68A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Diode Type: Three Phase Technology: Standard Supplier Device Package: Module Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 68 A Current - Reverse Leakage @ Vr: 500 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MCC161-22IO1 | IXYS |
Description: THERISTER MODULE 2200V Packaging: Bulk Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 165 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 300 A Voltage - Off State: 2.2 kV |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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IXLF19N250A | IXYS |
Description: IGBT NPT 2500V 32A ISOPLUS I4PAC Packaging: Tube Package / Case: i4-Pac™-5 (3 Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A Supplier Device Package: ISOPLUS i4-PAC™ IGBT Type: NPT Switching Energy: 15mJ (on), 30mJ (off) Test Condition: 1500V, 19A, 47Ohm, 15V Gate Charge: 142 nC Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 2500 V Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MDI 300-12 A4 | IXYS |
Description: TRANS IGBT PWR MODULE 1.2KV 330A |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | |||||||||||||||||||
| MEE 300-06DA | IXYS |
Description: DIODE MODULE 600V 304A Y4-M6 |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||||||||||||||
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IXFH40N50Q | IXYS |
Description: MOSFET N-CH 500V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| HTZ270H48K | IXYS |
Description: DIODE MODULE GP 48000V 3.4A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 3.4A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 48000 V Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 48000 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IXGN60N60 | IXYS |
Description: IGBT MOD 600V 100A 250W SOT-227B Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 4 nF @ 25 V Voltage Coupled to Input Capacitance (Cies) @ Vce: 25 |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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MCC250-18io1 | IXYS |
Description: THYRISTOR DUAL 1800V 450A |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||||||
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DSEE30-12A | IXYS |
Description: DIODE ARRAY GP 1200V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
на замовлення 1486 шт: термін постачання 21-31 дні (днів) |
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DSDI60-16A | IXYS |
Description: DIODE STANDARD 1600V 63A TO247AD Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Standard Current - Average Rectified (Io): 63A Supplier Device Package: TO-247AD Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A Current - Reverse Leakage @ Vr: 2 mA @ 1600 V |
на замовлення 91 шт: термін постачання 21-31 дні (днів) |
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MCC310-16io1 | IXYS |
Description: SCR MODULE 1.6KV 500A Y2-DCB Packaging: Bulk Package / Case: Y2-DCB Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 500 A Voltage - Off State: 1.6 kV |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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VUO50-08NO3 | IXYS |
Description: BRIDGE RECT 3P 800V 58A FO-F-B Packaging: Bulk Package / Case: FO-F-B Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: FO-F-B Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 58 A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 300 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXDN430MYI | IXYS |
Description: IC GATE DRVR LOW-SIDE TO263 Packaging: Box Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 8.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: TO-263-5 Rise / Fall Time (Typ): 18ns, 16ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 30A, 30A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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VUO82-16NO7 | IXYS |
Description: BRIDGE RECT 3P 1.6KV 88A PWS-D Packaging: Bulk Package / Case: PWS-D Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: PWS-D Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 88 A Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A Current - Reverse Leakage @ Vr: 300 µA @ 1600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXTA3N120 | IXYS |
Description: MOSFET N-CH 1200V 3A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
на замовлення 619 шт: термін постачання 21-31 дні (днів) |
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VBO130-08NO7 | IXYS |
Description: BRIDGE RECT 1P 800V 122A PWS-E Packaging: Bulk Package / Case: PWS-E Mounting Type: Chassis Mount Diode Type: Single Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: PWS-E Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 122 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A Current - Reverse Leakage @ Vr: 200 µA @ 800 V |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXFT13N100 | IXYS |
Description: MOSFET N-CH 1000V 12.5A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXDI402SI | IXYS |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 8ns, 8ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 2A, 2A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FII40-06D | IXYS |
Description: IGBT H BRIDGE 600V 40A I4PAK5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MCC312-16io1 | IXYS |
Description: SCR MODULE 1.6KV 520A Y1-CU Packaging: Bulk Package / Case: Y1-CU Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 150 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 320 A Voltage - Gate Trigger (Vgt) (Max): 2 V Part Status: Active Current - On State (It (RMS)) (Max): 520 A Voltage - Off State: 1.6 kV |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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| DSA9-16F | IXYS | Description: DIODE AVAL 1600V 11A DO203AA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | |||||||||||||||||||
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IXDD409YI | IXYS |
Description: IC GATE DRVR LOW-SIDE TO263 Packaging: Tube Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Supply: 4.5V ~ 35V Input Type: Non-Inverting Supplier Device Package: TO-263-5 Rise / Fall Time (Typ): 10ns, 10ns Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 9A, 9A Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
.jpg "IXGH45N120") |
IXGH45N120 | IXYS |
Description: IGBT 1200V 75A 300W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 55ns/370ns Switching Energy: 14mJ (off) Test Condition: 960V, 45A, 5Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 180 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXGH60N60 | IXYS |
Description: IGBT PT 600V 75A TO-247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 50ns/300ns Switching Energy: 8mJ (off) Test Condition: 480V, 60A, 2.7Ohm, 15V Gate Charge: 130 nC Part Status: Obsolete Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 300 W |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||||||
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IX6R11S3 | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 16SOIC |
товару немає в наявності |
Мінімальне замовлення: 46 шт В кошику од. на суму грн. | ||||||||||||||||||
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MCC26-14io1B | IXYS |
Description: DUL THYRIS MOD 800-2200V 19-320A Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 32 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 50 A Voltage - Off State: 1.4 kV |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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| MWI150-06A8 | IXYS |
Description: IGBT MODULE 600V 170A 515W E3 Packaging: Bulk Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A NTC Thermistor: No Supplier Device Package: E3 IGBT Type: NPT Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 515 W Current - Collector Cutoff (Max): 1.5 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IXTQ64N25P | IXYS |
Description: MOSFET N-CH 250V 64A TO3P |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXGY2N120 | IXYS |
Description: IGBT 1200V 5A 25W TO252AA |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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MCC132-16io1 | IXYS |
Description: THYRISTOR MOD 1600V 2X138A Packaging: Bulk Package / Case: Y4-M6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 130 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Part Status: Active Current - On State (It (RMS)) (Max): 300 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMO90-14IO6 | IXYS |
Description: SCR DUAL CNTRL 1400V 90A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: 1-Phase Controller - All SCRs Current - Hold (Ih) (Max): 100 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 38 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 60 A Voltage - Off State: 1.4 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VUO105-12NO7 | IXYS |
Description: BRIDGE RECT 3P 1.2KV 140A PWS-C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VVZB120-12IO2 | IXYS |
Description: 3-PHASE BRIDGE RECT 1600V 120A |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||||||||||||||
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IXTH50P085 | IXYS |
Description: MOSFET P-CH 85V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 85 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXBT16N170A | IXYS |
Description: IGBT 1700V 16A TO-268AA Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 360 ns Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A Supplier Device Package: TO-268AA Td (on/off) @ 25°C: 15ns/160ns Switching Energy: 1.2mJ (off) Test Condition: 1360V, 10A, 10Ohm, 15V Gate Charge: 65 nC Part Status: Active Current - Collector (Ic) (Max): 16 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 40 A Power - Max: 150 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXSP10N60B2D1 | IXYS |
Description: IGBT PT 600V 20A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/180ns Switching Energy: 430µJ (off) Test Condition: 480V, 10A, 30Ohm, 15V Gate Charge: 17 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 100 W |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXSA10N60B2D1 | IXYS |
Description: IGBT 600V 20A 100W TO263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/180ns Switching Energy: 430µJ (off) Test Condition: 480V, 10A, 30Ohm, 15V Gate Charge: 17 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXSH10N60B2D1 | IXYS |
Description: IGBT PT 600V 20A TO-247AD Packaging: Box Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/180ns Switching Energy: 430µJ (off) Test Condition: 480V, 10A, 30Ohm, 15V Gate Charge: 17 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 100 W |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXSP20N60B2D1 | IXYS |
Description: IGBT PT 600V 35A TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 30ns/116ns Switching Energy: 380µJ (off) Test Condition: 480V, 16A, 10Ohm, 15V Gate Charge: 33 nC Part Status: Obsolete Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 190 W |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXSA20N60B2D1 | IXYS |
Description: IGBT PT 600V 35A TO-263AA Packaging: Box Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/116ns Switching Energy: 380µJ (off) Test Condition: 480V, 16A, 10Ohm, 15V Gate Charge: 33 nC Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 190 W |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXSH20N60B2D1 | IXYS |
Description: IGBT PT 600V 35A TO-247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/116ns Switching Energy: 380µJ (off) Test Condition: 480V, 16A, 10Ohm, 15V Gate Charge: 33 nC Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 190 W |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. | ||||||||||||||||||
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IXSQ20N60B2D1 | IXYS |
Description: IGBT PT 600V 35A TO-3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A Supplier Device Package: TO-3P IGBT Type: PT Td (on/off) @ 25°C: 30ns/116ns Switching Energy: 380µJ (off) Gate Charge: 33 nC Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 190 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXSH30N60B2D1 | IXYS |
Description: IGBT PT 600V 48A TO-247AD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: PT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 550µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXST30N60B2D1 | IXYS |
Description: IGBT 600V 48A 250W TO268 Packaging: Bulk Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A Supplier Device Package: TO-268AA IGBT Type: PT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 550µJ (off) Test Condition: 400V, 24A, 5Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 250 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
.jpg "IXSH40N60B2D1") |
IXSH40N60B2D1 | IXYS |
Description: IGBT 600V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Input Type: Standard Supplier Device Package: TO-247AD IGBT Type: PT Part Status: Obsolete Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXST40N60B2D1 | IXYS | Description: IGBT 600V 48A TO268 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IXZ210N50L | IXYS |
Description: RF MOSFET 50V DE275 Packaging: Tube Package / Case: 6-SMD Module Current Rating (Amps): 10A Frequency: 175MHz Configuration: N-Channel Power - Output: 200W Gain: 16dB Technology: MOSFET Supplier Device Package: DE275 Part Status: Obsolete Voltage - Rated: 500 V Voltage - Test: 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IX6R11S6 | IXYS |
Description: IC GATE DRVR HALF-BRIDGE 18SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IXFR40N50Q2 | IXYS |
Description: MOSFET N-CH 500V 29A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS247™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ZY180L350 | IXYS |
Description: X SERIES KEY PLUG W/WIRE 350MM Packaging: Bulk Type: Keyed Gate Cathode Twin Plugs Part Status: Active |
на замовлення 14878 шт: термін постачання 21-31 дні (днів) |
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ZY180R350 | IXYS |
Description: X SER KEY PLUG W/WIRE 350MM RED Packaging: Bulk Type: Keyed Gate Cathode Twin Plugs Part Status: Active |
на замовлення 4667 шт: термін постачання 21-31 дні (днів) |
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MCC19-16io1B | IXYS |
Description: THYRISTOR MODULE 1600V 2X40A Packaging: Bulk Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C (TJ) Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Part Status: Active Current - On State (It (RMS)) (Max): 40 A Voltage - Off State: 1.6 kV |
на замовлення 72 шт: термін постачання 21-31 дні (днів) |
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IXSK35N120AU1 | IXYS |
Description: IGBT 1200V 70A 300W TO264 Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A Supplier Device Package: TO-264AA (IXSK) Td (on/off) @ 25°C: 80ns/400ns Switching Energy: 10mJ (off) Test Condition: 960V, 35A, 2.7Ohm, 15V Gate Charge: 150 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 140 A Power - Max: 300 W |
товару немає в наявності |
В кошику од. на суму грн. |
| VUO60-16NO3 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 72A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 72 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 72A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 72 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| IXGH32N170A |
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Виробник: IXYS
Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
Description: IGBT NPT 1700V 32A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/260ns
Switching Energy: 1.5mJ (off)
Test Condition: 850V, 32A, 2.7Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 350 W
на замовлення 765 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1770.79 грн |
| 30+ | 1099.49 грн |
| 120+ | 1043.24 грн |
| VUE75-12NO7 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
Description: BRIDGE RECT 3P 1.2KV 74A ECOPAC1
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| ME0500-06DA |
Виробник: IXYS
Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Description: DIODE GEN PURP 600V 514A Y4-M6
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 514A
Supplier Device Package: Y4-M6
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 300 A
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| IXFN27N80 |
|
Виробник: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9740 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXFX55N50F |
Виробник: IXYS
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
Description: MOSFET N-CH 500V 55A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 27.5A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| VU068-08N07 |
Виробник: IXYS
Description: BRIDGE RECT 3P 800V 68A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 68 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
Description: BRIDGE RECT 3P 800V 68A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Three Phase
Technology: Standard
Supplier Device Package: Module
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 68 A
Current - Reverse Leakage @ Vr: 500 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| MCC161-22IO1 |
|
Виробник: IXYS
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
Description: THERISTER MODULE 2200V
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 165 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 2.2 kV
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9239.46 грн |
| 12+ | 8236.24 грн |
| IXLF19N250A |
|
Виробник: IXYS
Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
Description: IGBT NPT 2500V 32A ISOPLUS I4PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 19A
Supplier Device Package: ISOPLUS i4-PAC™
IGBT Type: NPT
Switching Energy: 15mJ (on), 30mJ (off)
Test Condition: 1500V, 19A, 47Ohm, 15V
Gate Charge: 142 nC
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Power - Max: 250 W
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| MDI 300-12 A4 |
|
Виробник: IXYS
Description: TRANS IGBT PWR MODULE 1.2KV 330A
Description: TRANS IGBT PWR MODULE 1.2KV 330A
товару немає в наявності
Мінімальне замовлення: 2 шт
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| MEE 300-06DA |
|
Виробник: IXYS
Description: DIODE MODULE 600V 304A Y4-M6
Description: DIODE MODULE 600V 304A Y4-M6
товару немає в наявності
Мінімальне замовлення: 6 шт
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| IXFH40N50Q |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: MOSFET N-CH 500V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
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| HTZ270H48K |
|
Виробник: IXYS
Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
Description: DIODE MODULE GP 48000V 3.4A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 3.4A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 48000 V
Voltage - Forward (Vf) (Max) @ If: 46 V @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 48000 V
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| IXGN60N60 |
Виробник: IXYS
Description: IGBT MOD 600V 100A 250W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
Description: IGBT MOD 600V 100A 250W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 200 µA
Input Capacitance (Cies) @ Vce: 4 nF @ 25 V
Voltage Coupled to Input Capacitance (Cies) @ Vce: 25
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Мінімальне замовлення: 10 шт
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| MCC250-18io1 |
|
Виробник: IXYS
Description: THYRISTOR DUAL 1800V 450A
Description: THYRISTOR DUAL 1800V 450A
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
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| DSEE30-12A |
|
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE ARRAY GP 1200V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1968.91 грн |
| 30+ | 1219.92 грн |
| 60+ | 1139.65 грн |
| 120+ | 1006.21 грн |
| 510+ | 944.40 грн |
| DSDI60-16A |
|
Виробник: IXYS
Description: DIODE STANDARD 1600V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
Description: DIODE STANDARD 1600V 63A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 63A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 4.1 V @ 70 A
Current - Reverse Leakage @ Vr: 2 mA @ 1600 V
на замовлення 91 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1241.71 грн |
| 30+ | 738.65 грн |
| 60+ | 684.28 грн |
| MCC310-16io1 |
|
Виробник: IXYS
Description: SCR MODULE 1.6KV 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 500A Y2-DCB
Packaging: Bulk
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 500 A
Voltage - Off State: 1.6 kV
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11770.48 грн |
| 10+ | 9805.25 грн |
| VUO50-08NO3 |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
Description: BRIDGE RECT 3P 800V 58A FO-F-B
Packaging: Bulk
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 10 шт
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| IXDN430MYI |
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Box
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 8.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 18ns, 16ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 30A, 30A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| VUO82-16NO7 |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Description: BRIDGE RECT 3P 1.6KV 88A PWS-D
Packaging: Bulk
Package / Case: PWS-D
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-D
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 88 A
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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| IXTA3N120 |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 1200V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
на замовлення 619 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 607.41 грн |
| 50+ | 322.53 грн |
| 100+ | 297.26 грн |
| 500+ | 247.48 грн |
| VBO130-08NO7 |
|
Виробник: IXYS
Description: BRIDGE RECT 1P 800V 122A PWS-E
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 122 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
Description: BRIDGE RECT 1P 800V 122A PWS-E
Packaging: Bulk
Package / Case: PWS-E
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-E
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 122 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 120 A
Current - Reverse Leakage @ Vr: 200 µA @ 800 V
товару немає в наявності
Мінімальне замовлення: 5 шт
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| IXFT13N100 |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 1000V 12.5A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| IXDI402SI |
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 8ns, 8ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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од. на суму грн.
| FII40-06D |
|
Виробник: IXYS
Description: IGBT H BRIDGE 600V 40A I4PAK5
Description: IGBT H BRIDGE 600V 40A I4PAK5
товару немає в наявності
В кошику
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| MCC312-16io1 |
|
Виробник: IXYS
Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 520A Y1-CU
Packaging: Bulk
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 10100A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 15320.52 грн |
| DSA9-16F |
Виробник: IXYS
Description: DIODE AVAL 1600V 11A DO203AA
Description: DIODE AVAL 1600V 11A DO203AA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXDD409YI |
Виробник: IXYS
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE TO263
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 35V
Input Type: Non-Inverting
Supplier Device Package: TO-263-5
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 9A, 9A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| IXGH45N120 |
|
Виробник: IXYS
Description: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
Description: IGBT 1200V 75A 300W TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 55ns/370ns
Switching Energy: 14mJ (off)
Test Condition: 960V, 45A, 5Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 300 W
товару немає в наявності
В кошику
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| IXGH60N60 |
Виробник: IXYS
Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
Description: IGBT PT 600V 75A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 50ns/300ns
Switching Energy: 8mJ (off)
Test Condition: 480V, 60A, 2.7Ohm, 15V
Gate Charge: 130 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 300 W
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
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| IX6R11S3 |
|
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
товару немає в наявності
Мінімальне замовлення: 46 шт
В кошику
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| MCC26-14io1B |
|
Виробник: IXYS
Description: DUL THYRIS MOD 800-2200V 19-320A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
Description: DUL THYRIS MOD 800-2200V 19-320A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 32 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 50 A
Voltage - Off State: 1.4 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2121.73 грн |
| MWI150-06A8 |
Виробник: IXYS
Description: IGBT MODULE 600V 170A 515W E3
Packaging: Bulk
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MODULE 600V 170A 515W E3
Packaging: Bulk
Package / Case: E3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: E3
IGBT Type: NPT
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1.5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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| IXTQ64N25P |
|
Виробник: IXYS
Description: MOSFET N-CH 250V 64A TO3P
Description: MOSFET N-CH 250V 64A TO3P
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| IXGY2N120 |
|
Виробник: IXYS
Description: IGBT 1200V 5A 25W TO252AA
Description: IGBT 1200V 5A 25W TO252AA
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| MCC132-16io1 |
|
Виробник: IXYS
Description: THYRISTOR MOD 1600V 2X138A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
Description: THYRISTOR MOD 1600V 2X138A
Packaging: Bulk
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.6 kV
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| MMO90-14IO6 |
|
Виробник: IXYS
Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
Description: SCR DUAL CNTRL 1400V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: 1-Phase Controller - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 440A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 38 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 60 A
Voltage - Off State: 1.4 kV
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| VUO105-12NO7 |
|
Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
Description: BRIDGE RECT 3P 1.2KV 140A PWS-C
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| VVZB120-12IO2 |
|
Виробник: IXYS
Description: 3-PHASE BRIDGE RECT 1600V 120A
Description: 3-PHASE BRIDGE RECT 1600V 120A
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| IXTH50P085 |
|
Виробник: IXYS
Description: MOSFET P-CH 85V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET P-CH 85V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
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| IXBT16N170A |
|
Виробник: IXYS
Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
Description: IGBT 1700V 16A TO-268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 360 ns
Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 10A
Supplier Device Package: TO-268AA
Td (on/off) @ 25°C: 15ns/160ns
Switching Energy: 1.2mJ (off)
Test Condition: 1360V, 10A, 10Ohm, 15V
Gate Charge: 65 nC
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 150 W
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В кошику
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| IXSP10N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 20A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
Description: IGBT PT 600V 20A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXSA10N60B2D1 |
|
Виробник: IXYS
Description: IGBT 600V 20A 100W TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
Description: IGBT 600V 20A 100W TO263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
товару немає в наявності
В кошику
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| IXSH10N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 20A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
Description: IGBT PT 600V 20A TO-247AD
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/180ns
Switching Energy: 430µJ (off)
Test Condition: 480V, 10A, 30Ohm, 15V
Gate Charge: 17 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| IXSP20N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
Description: IGBT PT 600V 35A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXSA20N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 35A TO-263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
Description: IGBT PT 600V 35A TO-263AA
Packaging: Box
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-263AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| IXSH20N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 35A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
Description: IGBT PT 600V 35A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Test Condition: 480V, 16A, 10Ohm, 15V
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 190 W
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Мінімальне замовлення: 30 шт
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| IXSQ20N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 35A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-3P
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
Description: IGBT PT 600V 35A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 16A
Supplier Device Package: TO-3P
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/116ns
Switching Energy: 380µJ (off)
Gate Charge: 33 nC
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 190 W
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| IXSH30N60B2D1 |
Виробник: IXYS
Description: IGBT PT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
Description: IGBT PT 600V 48A TO-247AD
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
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| IXST30N60B2D1 |
|
Виробник: IXYS
Description: IGBT 600V 48A 250W TO268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
Description: IGBT 600V 48A 250W TO268
Packaging: Bulk
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Supplier Device Package: TO-268AA
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 550µJ (off)
Test Condition: 400V, 24A, 5Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 250 W
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| IXSH40N60B2D1 |
Виробник: IXYS
Description: IGBT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Description: IGBT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: TO-247AD
IGBT Type: PT
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
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| IXST40N60B2D1 |
Виробник: IXYS
Description: IGBT 600V 48A TO268
Description: IGBT 600V 48A TO268
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| IXZ210N50L |
Виробник: IXYS
Description: RF MOSFET 50V DE275
Packaging: Tube
Package / Case: 6-SMD Module
Current Rating (Amps): 10A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 16dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 50 V
Description: RF MOSFET 50V DE275
Packaging: Tube
Package / Case: 6-SMD Module
Current Rating (Amps): 10A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 200W
Gain: 16dB
Technology: MOSFET
Supplier Device Package: DE275
Part Status: Obsolete
Voltage - Rated: 500 V
Voltage - Test: 50 V
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| IX6R11S6 |
|
Виробник: IXYS
Description: IC GATE DRVR HALF-BRIDGE 18SOIC
Description: IC GATE DRVR HALF-BRIDGE 18SOIC
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| IXFR40N50Q2 |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 29A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 20A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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| ZY180L350 |
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE 350MM
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
Description: X SERIES KEY PLUG W/WIRE 350MM
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 14878 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 303.32 грн |
| 5+ | 249.50 грн |
| 10+ | 234.26 грн |
| 25+ | 203.27 грн |
| 50+ | 192.31 грн |
| 100+ | 182.49 грн |
| 250+ | 168.28 грн |
| 500+ | 160.82 грн |
| 1000+ | 154.13 грн |
| ZY180R350 |
Виробник: IXYS
Description: X SER KEY PLUG W/WIRE 350MM RED
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
Description: X SER KEY PLUG W/WIRE 350MM RED
Packaging: Bulk
Type: Keyed Gate Cathode Twin Plugs
Part Status: Active
на замовлення 4667 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.52 грн |
| 5+ | 229.38 грн |
| 10+ | 215.41 грн |
| 25+ | 186.98 грн |
| 50+ | 176.90 грн |
| 100+ | 167.87 грн |
| 250+ | 154.80 грн |
| 500+ | 147.93 грн |
| 1000+ | 141.77 грн |
| MCC19-16io1B |
|
Виробник: IXYS
Description: THYRISTOR MODULE 1600V 2X40A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 1.6 kV
Description: THYRISTOR MODULE 1600V 2X40A
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 400A, 420A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 1.6 kV
на замовлення 72 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1869.85 грн |
| 36+ | 1252.27 грн |
| IXSK35N120AU1 |
|
Виробник: IXYS
Description: IGBT 1200V 70A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
Description: IGBT 1200V 70A 300W TO264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
Supplier Device Package: TO-264AA (IXSK)
Td (on/off) @ 25°C: 80ns/400ns
Switching Energy: 10mJ (off)
Test Condition: 960V, 35A, 2.7Ohm, 15V
Gate Charge: 150 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 300 W
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