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Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXFK50N50
Код товару: 221654
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IXYS IXF55N5050N50.pdf Транзистори > Польові N-канальні
Корпус: TO-264AA
Напруга сток-витік Uds, В: 500 В
Струм стоку Idd, А: 50 А
Опір відкритого каналу Rds(on), Ом: 100 мОм
Вхідна ємність Ciss, пФ / заряд затвора Qg, nC: 9400/330
Монтаж: THT
у наявності: 15 шт
  • 15 шт - РАДІОМАГ-Київ
1+620.00 грн
В кошику  од. на суму  грн.
DSA70C150HB DSA70C150HB
Код товару: 221703
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IXYS DSA70C150HB.pdf Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO247-3
Зворотна напруга Vrrm, В: 150 В
Прямий струм (per leg) If, А: 35 А
Падіння напруги Vf, В: 0,77 В
Примітка: Конструкція: два діоди в одному корпусі.
Монтаж: THT
Імпульсний струм Ifsm, А: 600 А
у наявності: 20 шт
  • 20 шт - РАДІОМАГ-Київ
1+250.00 грн
В кошику  од. на суму  грн.
PRME15002
Код товару: 104458
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IXYS Реле
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VUB120-16NO2
Код товару: 106182
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IXYS VUB120.pdf Транзистори > IGBT
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MCMA110P1200TA
Код товару: 108409
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IXYS Littelfuse-Power-Semiconductors-MCMA110P1200TA-Datasheet?assetguid=003BFC6D-6267-42FB-9FA2-7D09D9026911 Різні комплектуючі > Різні комплектуючі 3
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MMO36-16IO1
Код товару: 109369
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IXYS MLO,MMO163.pdf Транзистори > IGBT
товару немає в наявності
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DSEI8-06A DSEI8-06A IXYS Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674 Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4782 шт:
термін постачання 21-31 дні (днів)
2+164.28 грн
50+85.95 грн
100+70.46 грн
500+59.57 грн
1000+56.87 грн
2000+55.57 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI12-06A DSEI12-06A IXYS Littelfuse-Power-Semiconductors-DSEI12-06A-Datasheet?assetguid=81384260-8296-4c32-be34-79a68d08a8d9 description Description: DIODE STANDARD 600V 14A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 14A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+179.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI12-10A DSEI12-10A IXYS Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251 description Description: DIODE STANDARD 1000V 12A TO220AC
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DSEI12-12A DSEI12-12A IXYS Littelfuse-Power-Semiconductors-DSEI12-12A-Datasheet?assetguid=7c5a1756-a87e-406a-bf53-ad5fe2a1371e Description: DIODE STANDARD 1200V 11A TO220AC
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 11A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
2+211.55 грн
50+88.62 грн
100+86.81 грн
500+77.77 грн
1000+74.20 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI20-12A DSEI20-12A IXYS Littelfuse-Power-Semiconductors-DSEI20-12A-Datasheet?assetguid=8c99a112-5be8-4136-8e3a-599f242c80ba description Description: DIODE STANDARD 1200V 17A TO220AC
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 17A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 8428 шт:
термін постачання 21-31 дні (днів)
1+320.81 грн
50+174.99 грн
100+169.60 грн
500+133.75 грн
1000+125.99 грн
В кошику  од. на суму  грн.
DSEI30-06A DSEI30-06A IXYS Littelfuse-Power-Semiconductors-DSEI30-06A-Datasheet?assetguid=1b95ddf4-8c4f-43b0-9ea3-91f4cc6c7fc3 description Description: DIODE STANDARD 600V 37A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DSEI30-10A DSEI30-10A IXYS Littelfuse-Power-Semiconductors-DSEI30-10A-Datasheet?assetguid=8f986320-a1c9-47fb-9305-be7ffc32f88c description Description: DIODE STANDARD 1000V 30A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 36 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 3471 шт:
термін постачання 21-31 дні (днів)
1+519.96 грн
30+287.56 грн
120+240.79 грн
510+193.81 грн
1020+182.08 грн
2010+179.00 грн
В кошику  од. на суму  грн.
DSEI30-12A DSEI30-12A IXYS Littelfuse-Power-Semiconductors-DSEI30-12A-Datasheet?assetguid=44e2b670-3490-4ada-8ca9-4f21c67d6b05 Description: DIODE STANDARD 1200V 26A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 26A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
1+557.93 грн
30+310.77 грн
В кошику  од. на суму  грн.
DSEK60-06A DSEK60-06A IXYS Littelfuse-Power-Semiconductors-DSEK60-06A-Datasheet?assetguid=eb9c0ffa-7bea-40f5-98f9-209bc46f5816 Description: DIODE ARRAY GP 600V 30A TO-247AD
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+733.06 грн
30+418.25 грн
120+355.19 грн
В кошику  од. на суму  грн.
DSEK60-12A DSEK60-12A IXYS mc557.pdf Description: DIODE ARRAY GP 1200V 26A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 26A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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DSEI60-06A DSEI60-06A IXYS Littelfuse-Power-Semiconductors-DSEI60-06A-Datasheet?assetguid=7f2913dd-8fa4-43ed-81fa-cbde4406a85a description Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 856 шт:
термін постачання 21-31 дні (днів)
1+581.96 грн
30+328.36 грн
120+277.37 грн
510+233.27 грн
В кошику  од. на суму  грн.
DSEI60-10A DSEI60-10A IXYS Littelfuse-Power-Semiconductors-DSEI60-10A-Datasheet?assetguid=eaf29b46-fac1-4c03-b971-b7640b4f8943 description Description: DIODE STANDARD 1000V 60A TO247AD
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+757.86 грн
30+433.94 грн
120+368.98 грн
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IXGH24N60A IXGH24N60A IXYS Description: IGBT 600V 48A 150W TO247AD
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH32N60B IXGH32N60B IXYS Description: IGBT 600V 60A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 125 nC
Test Condition: 480V, 32A, 4.7Ohm, 15V
Switching Energy: 800µJ (off)
Td (on/off) @ 25°C: 25ns/100ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXGH50N60A IXGH50N60A IXYS Description: IGBT 600V 75A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Gate Charge: 200 nC
Test Condition: 480V, 50A, 2.7Ohm, 15V
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Switching Energy: 4.8mJ (off)
Td (on/off) @ 25°C: 50ns/200ns
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IXGH10N100U1 IXGH10N100U1 IXYS Description: IGBT 1000V 20A 100W TO247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 52 nC
Test Condition: 800V, 10A, 150Ohm, 15V
Switching Energy: 2mJ (off)
Td (on/off) @ 25°C: 100ns/550ns
Supplier Device Package: TO-247AD
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IXGH17N100U1 IXGH17N100U1 IXYS Description: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Power - Max: 150 W
Current - Collector Pulsed (Icm): 68 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 34 A
Gate Charge: 100 nC
Test Condition: 800V, 17A, 82Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IXGH24N60AU1 IXGH24N60AU1 IXYS IXGH24N60AU1%28S%29.pdf Description: IGBT 600V 48A 150W TO247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 90 nC
Test Condition: 480V, 24A, 10Ohm, 15V
Switching Energy: 600µJ (on), 1.5mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH32N60AU1 IXGH32N60AU1 IXYS IXGH32N60AU1%28S%29.pdf Description: IGBT 600V 60A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 125 nC
Test Condition: 480V, 32A, 4.7Ohm, 15V
Switching Energy: 1.8mJ (off)
Td (on/off) @ 25°C: 25ns/120ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXGH10N100AU1 IXGH10N100AU1 IXYS Description: IGBT 1000V 20A TO-247AD
Td (on/off) @ 25°C: 100ns/550ns
Supplier Device Package: TO-247AD
Power - Max: 100 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 52 nC
Test Condition: 800V, 10A, 150Ohm, 15V
Switching Energy: 2mJ (off)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXGH17N100AU1 IXGH17N100AU1 IXYS Description: IGBT 1000V 34A 150W TO247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 68 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 34 A
Gate Charge: 100 nC
Test Condition: 800V, 17A, 82Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXTH67N10 IXTH67N10 IXYS Description: MOSFET N-CH 100V 67A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXTH75N10 IXTH75N10 IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt___n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 75A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH50N20 IXTH50N20 IXYS Description: MOSFET N-CH 200V 50A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH76N07-11 IXFH76N07-11 IXYS Description: MOSFET N-CH 70V 76A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 3.4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXFH76N07-12 IXFH76N07-12 IXYS Description: MOSFET N-CH 70V 76A TO247AD
Supplier Device Package: TO-247AD (IXFH)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs(th) (Max) @ Id: 3.4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH67N10 IXFH67N10 IXYS IXFH67N10.pdf Description: MOSFET N-CH 100V 67A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH75N10 IXFH75N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh75n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 75A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH42N20 IXFH42N20 IXYS littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca Description: MOSFET N-CH 200V 42A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH50N20 IXFH50N20 IXYS littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca Description: MOSFET N-CH 200V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXFH58N20 IXFH58N20 IXYS IXFH42N20.pdf Description: MOSFET N-CH 200V 58A TO-247AD
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IXFH35N30 IXFH35N30 IXYS IXFH35N30.pdf Description: MOSFET N-CH 300V 35A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH40N30 IXFH40N30 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH40N30-Datasheet.PDF?assetguid=4E5D1F8F-4434-4745-B9A0-51EBD9148953 Description: MOSFET N-CH 300V 40A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
1+1979.89 грн
30+1476.72 грн
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IXFH13N50 IXFH13N50 IXYS IXFH13N50%2C%20IXFM13N50.pdf Description: MOSFET N-CH 500V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IXFH21N50 IXYS Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFH24N50 IXFH24N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH24N50-Datasheet.PDF?assetguid=45C3E688-4817-4322-807F-C536BC3F2C7C description Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFH26N50 IXFH26N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N50-Datasheet.PDF?assetguid=CE4D50C0-83E5-4D5F-9D10-87AA5080FF76 Description: MOSFET N-CH 500V 26A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH22N55 IXFH22N55 IXYS IXFH22N55.pdf Description: MOSFET N-CH 550V 22A TO247AD
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IXFH15N60 IXFH15N60 IXYS IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf Description: MOSFET N-CH 600V 15A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH20N60 IXFH20N60 IXYS IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf Description: MOSFET N-CH 600V 20A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFH7N80 IXFH7N80 IXYS IXFH7N80%2C%20IXFM7N80.pdf Description: MOSFET N-CH 800V 7A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH11N80 IXFH11N80 IXYS media?resourcetype=datasheets&itemid=79476836-FCDD-445B-85A2-E3D543AA50B4&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH11N80-Datasheet.PDF Description: MOSFET N-CH 800V 11A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH13N80 IXFH13N80 IXYS Description: MOSFET N-CH 800V 13A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
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IXFH6N90 IXFH6N90 IXYS IXFH6N100%2C%206N90%2C%20IXFM.pdf Description: MOSFET N-CH 900V 6A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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IXFH10N90 IXFH10N90 IXYS IXFH%2CIXFM_10N90%2C12N90%2C%20%20IXFH%2CIXFT_13N90.pdf Description: MOSFET N-CH 900V 10A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH12N90 IXFH12N90 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n90_datasheet.pdf.pdf Description: MOSFET N-CH 900V 12A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFH6N100 IXFH6N100 IXYS IXFH6N100, 6N90, IXFM.pdf Description: MOSFET N-CH 1000V 6A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
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IXFH10N100 IXFH10N100 IXYS Description: MOSFET N-CH 1KV 10A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 30 шт
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IXFH12N100 IXFH12N100 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO247AD
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IXFK110N07 IXFK110N07 IXYS 92802.pdf Description: MOSFET N-CH 70V 110A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXFK90N20 IXFK90N20 IXYS media?resourcetype=datasheets&itemid=EA51E744-B798-4D4A-BC5E-1907FD5099BD&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF----N20-Datasheet.PDF Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 25 шт
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IXFK73N30 IXFK73N30 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_73n30_datasheet.pdf.pdf Description: MOSFET N-CH 300V 73A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXFK44N50 IXFK44N50 IXYS IXFK48N50%2C%2044N50%2C%20IXFN.pdf Description: MOSFET N-CH 500V 44A TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFK36N60 IXFK36N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 36A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXFK50N50
Код товару: 221654
Додати до обраних Обраний товар
IXF55N5050N50.pdf
Виробник: IXYS
Транзистори > Польові N-канальні
Корпус: TO-264AA
Напруга сток-витік Uds, В: 500 В
Струм стоку Idd, А: 50 А
Опір відкритого каналу Rds(on), Ом: 100 мОм
Вхідна ємність Ciss, пФ / заряд затвора Qg, nC: 9400/330
Монтаж: THT
у наявності: 15 шт
  • 15 шт - РАДІОМАГ-Київ
КількістьЦіна без ПДВ
1+620.00 грн
В кошику  од. на суму  грн.
DSA70C150HB
Код товару: 221703
Додати до обраних Обраний товар
DSA70C150HB.pdf
Виробник: IXYS
Діоди, діодні мости, стабілітрони > Діоди Шотткі
Корпус: TO247-3
Зворотна напруга Vrrm, В: 150 В
Прямий струм (per leg) If, А: 35 А
Падіння напруги Vf, В: 0,77 В
Примітка: Конструкція: два діоди в одному корпусі.
Монтаж: THT
Імпульсний струм Ifsm, А: 600 А
у наявності: 20 шт
  • 20 шт - РАДІОМАГ-Київ
КількістьЦіна без ПДВ
1+250.00 грн
В кошику  од. на суму  грн.
PRME15002
Код товару: 104458
Додати до обраних Обраний товар
Виробник: IXYS
Реле
товару немає в наявності
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VUB120-16NO2
Код товару: 106182
Додати до обраних Обраний товар
VUB120.pdf
Виробник: IXYS
Транзистори > IGBT
товару немає в наявності
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MCMA110P1200TA
Код товару: 108409
Додати до обраних Обраний товар
Littelfuse-Power-Semiconductors-MCMA110P1200TA-Datasheet?assetguid=003BFC6D-6267-42FB-9FA2-7D09D9026911
Виробник: IXYS
Різні комплектуючі > Різні комплектуючі 3
товару немає в наявності
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MMO36-16IO1
Код товару: 109369
Додати до обраних Обраний товар
MLO,MMO163.pdf
Виробник: IXYS
Транзистори > IGBT
товару немає в наявності
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DSEI8-06A Littelfuse-Power-Semiconductors-DSEI8-06A-Datasheet?assetguid=e637c6ed-d932-4130-b9e4-8226a2821674
DSEI8-06A
Виробник: IXYS
Description: DIODE STANDARD 600V 8A TO220AC
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4782 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+164.28 грн
50+85.95 грн
100+70.46 грн
500+59.57 грн
1000+56.87 грн
2000+55.57 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI12-06A description Littelfuse-Power-Semiconductors-DSEI12-06A-Datasheet?assetguid=81384260-8296-4c32-be34-79a68d08a8d9
DSEI12-06A
Виробник: IXYS
Description: DIODE STANDARD 600V 14A TO220AC
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 14A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+179.00 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI12-10A description Littelfuse-Power-Semiconductors-DSEI12-10A-Datasheet?assetguid=38eae98d-c5a6-4995-9ec9-e84457531251
DSEI12-10A
Виробник: IXYS
Description: DIODE STANDARD 1000V 12A TO220AC
Current - Reverse Leakage @ Vr: 250 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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DSEI12-12A Littelfuse-Power-Semiconductors-DSEI12-12A-Datasheet?assetguid=7c5a1756-a87e-406a-bf53-ad5fe2a1371e
DSEI12-12A
Виробник: IXYS
Description: DIODE STANDARD 1200V 11A TO220AC
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 11A
Technology: Standard
Reverse Recovery Time (trr): 70 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+211.55 грн
50+88.62 грн
100+86.81 грн
500+77.77 грн
1000+74.20 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEI20-12A description Littelfuse-Power-Semiconductors-DSEI20-12A-Datasheet?assetguid=8c99a112-5be8-4136-8e3a-599f242c80ba
DSEI20-12A
Виробник: IXYS
Description: DIODE STANDARD 1200V 17A TO220AC
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 17A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
на замовлення 8428 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+320.81 грн
50+174.99 грн
100+169.60 грн
500+133.75 грн
1000+125.99 грн
В кошику  од. на суму  грн.
DSEI30-06A description Littelfuse-Power-Semiconductors-DSEI30-06A-Datasheet?assetguid=1b95ddf4-8c4f-43b0-9ea3-91f4cc6c7fc3
DSEI30-06A
Виробник: IXYS
Description: DIODE STANDARD 600V 37A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 37A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товару немає в наявності
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DSEI30-10A description Littelfuse-Power-Semiconductors-DSEI30-10A-Datasheet?assetguid=8f986320-a1c9-47fb-9305-be7ffc32f88c
DSEI30-10A
Виробник: IXYS
Description: DIODE STANDARD 1000V 30A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 36 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 3471 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+519.96 грн
30+287.56 грн
120+240.79 грн
510+193.81 грн
1020+182.08 грн
2010+179.00 грн
В кошику  од. на суму  грн.
DSEI30-12A Littelfuse-Power-Semiconductors-DSEI30-12A-Datasheet?assetguid=44e2b670-3490-4ada-8ca9-4f21c67d6b05
DSEI30-12A
Виробник: IXYS
Description: DIODE STANDARD 1200V 26A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 26A
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+557.93 грн
30+310.77 грн
В кошику  од. на суму  грн.
DSEK60-06A Littelfuse-Power-Semiconductors-DSEK60-06A-Datasheet?assetguid=eb9c0ffa-7bea-40f5-98f9-209bc46f5816
DSEK60-06A
Виробник: IXYS
Description: DIODE ARRAY GP 600V 30A TO-247AD
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 37 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+733.06 грн
30+418.25 грн
120+355.19 грн
В кошику  од. на суму  грн.
DSEK60-12A mc557.pdf
DSEK60-12A
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 26A TO247AD
Current - Reverse Leakage @ Vr: 750 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.55 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io) (per Diode): 26A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 60 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
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DSEI60-06A description Littelfuse-Power-Semiconductors-DSEI60-06A-Datasheet?assetguid=7f2913dd-8fa4-43ed-81fa-cbde4406a85a
DSEI60-06A
Виробник: IXYS
Description: DIODE STANDARD 600V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 856 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+581.96 грн
30+328.36 грн
120+277.37 грн
510+233.27 грн
В кошику  од. на суму  грн.
DSEI60-10A description Littelfuse-Power-Semiconductors-DSEI60-10A-Datasheet?assetguid=eaf29b46-fac1-4c03-b971-b7640b4f8943
DSEI60-10A
Виробник: IXYS
Description: DIODE STANDARD 1000V 60A TO247AD
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+757.86 грн
30+433.94 грн
120+368.98 грн
В кошику  од. на суму  грн.
IXGH24N60A
IXGH24N60A
Виробник: IXYS
Description: IGBT 600V 48A 150W TO247AD
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH32N60B
IXGH32N60B
Виробник: IXYS
Description: IGBT 600V 60A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 125 nC
Test Condition: 480V, 32A, 4.7Ohm, 15V
Switching Energy: 800µJ (off)
Td (on/off) @ 25°C: 25ns/100ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 32A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXGH50N60A
IXGH50N60A
Виробник: IXYS
Description: IGBT 600V 75A 250W TO247AD
Power - Max: 250 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 75 A
Gate Charge: 200 nC
Test Condition: 480V, 50A, 2.7Ohm, 15V
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Switching Energy: 4.8mJ (off)
Td (on/off) @ 25°C: 50ns/200ns
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IXGH10N100U1
IXGH10N100U1
Виробник: IXYS
Description: IGBT 1000V 20A 100W TO247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 100 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 52 nC
Test Condition: 800V, 10A, 150Ohm, 15V
Switching Energy: 2mJ (off)
Td (on/off) @ 25°C: 100ns/550ns
Supplier Device Package: TO-247AD
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IXGH17N100U1
IXGH17N100U1
Виробник: IXYS
Description: IGBT 1000V 34A 150W TO247AD
Packaging: Bulk
Power - Max: 150 W
Current - Collector Pulsed (Icm): 68 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 34 A
Gate Charge: 100 nC
Test Condition: 800V, 17A, 82Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 17A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IXGH24N60AU1 IXGH24N60AU1%28S%29.pdf
IXGH24N60AU1
Виробник: IXYS
Description: IGBT 600V 48A 150W TO247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 90 nC
Test Condition: 480V, 24A, 10Ohm, 15V
Switching Energy: 600µJ (on), 1.5mJ (off)
Td (on/off) @ 25°C: 25ns/150ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 24A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXGH32N60AU1 IXGH32N60AU1%28S%29.pdf
IXGH32N60AU1
Виробник: IXYS
Description: IGBT 600V 60A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 125 nC
Test Condition: 480V, 32A, 4.7Ohm, 15V
Switching Energy: 1.8mJ (off)
Td (on/off) @ 25°C: 25ns/120ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXGH10N100AU1
IXGH10N100AU1
Виробник: IXYS
Description: IGBT 1000V 20A TO-247AD
Td (on/off) @ 25°C: 100ns/550ns
Supplier Device Package: TO-247AD
Power - Max: 100 W
Current - Collector Pulsed (Icm): 40 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 52 nC
Test Condition: 800V, 10A, 150Ohm, 15V
Switching Energy: 2mJ (off)
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 30 шт
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IXGH17N100AU1
IXGH17N100AU1
Виробник: IXYS
Description: IGBT 1000V 34A 150W TO247AD
Power - Max: 150 W
Current - Collector Pulsed (Icm): 68 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector (Ic) (Max): 34 A
Gate Charge: 100 nC
Test Condition: 800V, 17A, 82Ohm, 15V
Switching Energy: 3mJ (off)
Td (on/off) @ 25°C: 100ns/500ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 17A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
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IXTH67N10
IXTH67N10
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 30 шт
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IXTH75N10 littelfuse_discrete_mosfets_n-channel_standard_ixt___n10_datasheet.pdf.pdf
IXTH75N10
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH50N20
IXTH50N20
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH76N07-11
IXFH76N07-11
Виробник: IXYS
Description: MOSFET N-CH 70V 76A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 3.4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXFH76N07-12
IXFH76N07-12
Виробник: IXYS
Description: MOSFET N-CH 70V 76A TO247AD
Supplier Device Package: TO-247AD (IXFH)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs(th) (Max) @ Id: 3.4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 30 шт
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IXFH67N10 IXFH67N10.pdf
IXFH67N10
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH75N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh75n10_datasheet.pdf.pdf
IXFH75N10
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 30 шт
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IXFH42N20 littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca
IXFH42N20
Виробник: IXYS
Description: MOSFET N-CH 200V 42A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH50N20 littelfuse-discrete-mosfets-ixfh50n20-datasheet?assetguid=fabf9ac5-d2db-4c2d-87fd-77971009cfca
IXFH50N20
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IXFH58N20 IXFH42N20.pdf
IXFH58N20
Виробник: IXYS
Description: MOSFET N-CH 200V 58A TO-247AD
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Мінімальне замовлення: 30 шт
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IXFH35N30 IXFH35N30.pdf
IXFH35N30
Виробник: IXYS
Description: MOSFET N-CH 300V 35A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH40N30 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH40N30-Datasheet.PDF?assetguid=4E5D1F8F-4434-4745-B9A0-51EBD9148953
IXFH40N30
Виробник: IXYS
Description: MOSFET N-CH 300V 40A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1979.89 грн
30+1476.72 грн
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IXFH13N50 IXFH13N50%2C%20IXFM13N50.pdf
IXFH13N50
Виробник: IXYS
Description: MOSFET N-CH 500V 13A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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Мінімальне замовлення: 30 шт
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IXFH21N50
Виробник: IXYS
Description: MOSFET N-CH 500V 21A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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Мінімальне замовлення: 30 шт
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IXFH24N50 description Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH24N50-Datasheet.PDF?assetguid=45C3E688-4817-4322-807F-C536BC3F2C7C
IXFH24N50
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXFH26N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N50-Datasheet.PDF?assetguid=CE4D50C0-83E5-4D5F-9D10-87AA5080FF76
IXFH26N50
Виробник: IXYS
Description: MOSFET N-CH 500V 26A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH22N55 IXFH22N55.pdf
IXFH22N55
Виробник: IXYS
Description: MOSFET N-CH 550V 22A TO247AD
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IXFH15N60 IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf
IXFH15N60
Виробник: IXYS
Description: MOSFET N-CH 600V 15A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH20N60 IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf
IXFH20N60
Виробник: IXYS
Description: MOSFET N-CH 600V 20A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFH7N80 IXFH7N80%2C%20IXFM7N80.pdf
IXFH7N80
Виробник: IXYS
Description: MOSFET N-CH 800V 7A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH11N80 media?resourcetype=datasheets&itemid=79476836-FCDD-445B-85A2-E3D543AA50B4&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH11N80-Datasheet.PDF
IXFH11N80
Виробник: IXYS
Description: MOSFET N-CH 800V 11A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH13N80
IXFH13N80
Виробник: IXYS
Description: MOSFET N-CH 800V 13A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Tube
Package / Case: TO-247-3
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IXFH6N90 IXFH6N100%2C%206N90%2C%20IXFM.pdf
IXFH6N90
Виробник: IXYS
Description: MOSFET N-CH 900V 6A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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IXFH10N90 IXFH%2CIXFM_10N90%2C12N90%2C%20%20IXFH%2CIXFT_13N90.pdf
IXFH10N90
Виробник: IXYS
Description: MOSFET N-CH 900V 10A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH12N90 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n90_datasheet.pdf.pdf
IXFH12N90
Виробник: IXYS
Description: MOSFET N-CH 900V 12A TO247AD
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFH6N100 IXFH6N100, 6N90, IXFM.pdf
IXFH6N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO247AD
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH10N100
IXFH10N100
Виробник: IXYS
Description: MOSFET N-CH 1KV 10A TO-247AD
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXFH12N100 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfh12n100_datasheet.pdf.pdf
IXFH12N100
Виробник: IXYS
Description: MOSFET N-CH 1000V 12A TO247AD
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247AD (IXFH)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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IXFK110N07 92802.pdf
IXFK110N07
Виробник: IXYS
Description: MOSFET N-CH 70V 110A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXFK90N20 media?resourcetype=datasheets&itemid=EA51E744-B798-4D4A-BC5E-1907FD5099BD&filename=Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF----N20-Datasheet.PDF
IXFK90N20
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
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IXFK73N30 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_73n30_datasheet.pdf.pdf
IXFK73N30
Виробник: IXYS
Description: MOSFET N-CH 300V 73A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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IXFK44N50 IXFK48N50%2C%2044N50%2C%20IXFN.pdf
IXFK44N50
Виробник: IXYS
Description: MOSFET N-CH 500V 44A TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
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Мінімальне замовлення: 300 шт
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IXFK36N60 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_36n60_datasheet.pdf.pdf
IXFK36N60
Виробник: IXYS
Description: MOSFET N-CH 600V 36A TO264AA
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 325 nC @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264AA (IXFK)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 25 шт
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