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IXTM13N80 IXYS Description: MOSFET N-CH TO-3
Packaging: Bulk
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N2154JK020 IXYS media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
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N2154JK040 IXYS media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
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N2154JK060 IXYS media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
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N1806QK160 IXYS media?resourcetype=datasheets&amp;itemid=de1a8def-ed03-49ed-9e5b-17ba56eb975f&amp;filename=littelfuse_discrete_thyristors_phase_control_n1806qk1_0_datasheet.pdf Description: SCR 1.6KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.6 kV
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N1806QK180 IXYS media?resourcetype=datasheets&amp;itemid=de1a8def-ed03-49ed-9e5b-17ba56eb975f&amp;filename=littelfuse_discrete_thyristors_phase_control_n1806qk1_0_datasheet.pdf Description: SCR 1.8KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.8 kV
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N1651QK200 IXYS Description: SCR 2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2 kV
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N1449QL220 IXYS media?resourcetype=datasheets&amp;itemid=da244957-1ece-407b-a166-441b04d1c415&amp;filename=littelfuse_discrete_thyristors_phase_control_n1449ql2_0_datasheet.pdf Description: SCR 2.2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2.2 kV
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N1651QK220 IXYS Description: SCR 2.2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2.2 kV
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MCNA150PD2200YB MCNA150PD2200YB IXYS littelfuse-power-semiconductors-mcna150pd2200yb-datasheet?assetguid=0e603e53-d7d6-4989-b0a4-2246df87b49b Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+6645.92 грн
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IXTP60N020T IXYS Description: MOSFET N-CH TO220AB
Packaging: Bulk
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MTI200WX75GD-SMD IXYS media?resourcetype=datasheets&itemid=b3c7aaa5-e71a-4780-b329-f524e185677a&filename=littelfuse%2520power%2520semiconductors%2520mti200wx75gd%2520datasheet.pdf Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
на замовлення 819 шт:
термін постачання 21-31 дні (днів)
13+2871.47 грн
Мінімальне замовлення: 13
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IXFK62N25 IXYS Description: MOSFET N-CH 62A TO264
Packaging: Bulk
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MTI145WX100GD-SMD IXYS Description: MOSFET 6N-CH 100V 190A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
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IXFX220N15P IXYS Description: MOSFET N-CH 220A PLUS247-3
Packaging: Bulk
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IXTA1970-TRL IXYS Description: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
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W3477MC360 IXYS media?resourcetype=datasheets&itemid=7c4b0c2e-af24-4e38-b6a8-59985d94dbad&filename=littelfuse_discrete_diodes_rectifier_w3477mc__0_datasheet.pdf Description: DIODE GEN PURP 3.6KV 3470A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 µs
Technology: Standard
Current - Average Rectified (Io): 3470A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
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IXYH30N120C4H1 IXYH30N120C4H1 IXYS ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09 Description: IGBT TRENCH 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
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IXGT32N120A3-TRL IXYS Description: IGBT PT 1200V 75A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268HV (IXGT)
IGBT Type: PT
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
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IXFN32N120 IXFN32N120 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n120_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
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IXTP36N30P-PDP IXYS Description: MOSFET N-CH TO220AB
Packaging: Bulk
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W0944WC120 IXYS media?resourcetype=datasheets&itemid=202e1f93-90c7-4370-8f86-6f993e268287&filename=littelfuse_discrete_diodes_rectifier_w0944wc1_0_datasheet.pdf Description: DIODE GEN PURP 1.2KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
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W0944WC150 IXYS media?resourcetype=datasheets&itemid=202e1f93-90c7-4370-8f86-6f993e268287&filename=littelfuse_discrete_diodes_rectifier_w0944wc1_0_datasheet.pdf Description: DIODE GEN PURP 1.5KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
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MDD72-14N1B MDD72-14N1B IXYS MDD72-14N1B.pdf Description: DIODE MOD GP 1400V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1400 V
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IXYH55N120B4H1 IXYH55N120B4H1 IXYS ixyh55n120b4h1-datasheet?assetguid=9a53bcd5-00c7-411c-b283-f63ed530e53f Description: IGBT TRENCH 1200V 138A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1247.55 грн
30+744.68 грн
120+649.51 грн
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IXYH55N120C4H1 IXYH55N120C4H1 IXYS media?resourcetype=datasheets&itemid=50f433fc-96b9-4ed1-8cb3-663cb80afb91&filename=power_semiconductor_discrete_igbt_ixyh55n120c4h1_datasheet.pdf Description: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
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MCMA110PD1800TB MCMA110PD1800TB IXYS Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F Description: SCR MODULE 1.8KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.8 kV
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M1022LC120 IXYS Description: DIODE STANDARD 1200V 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
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M1022LC160 IXYS media?resourcetype=datasheets&itemid=0e88a28a-ecb9-478a-b794-1e7828244a86&filename=littelfuse_discrete_diodes_fast_recovery_m1022lc__0_datasheet.pdf Description: DIODE GEN PURP 1.6KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
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IXYK30N170CV1 IXYS media?resourcetype=datasheets&itemid=dfbd999f-e3fd-4199-b6fd-09bd4c2655b5&filename=littelfuse_discrete_igbts_xpt_ixy_30n170cv1_datasheet.pdf Description: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
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W3708MC320 IXYS Description: DIODE STANDARD 3200V 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3200 V
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W3708MC350 IXYS Description: DIODE STANDARD 3500V 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3500 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3500 V
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IXKT70N60C5 IXYS Description: MOSFET P-CH 600V 68A TO-268
Packaging: Bulk
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IXTT75N15 IXYS Description: MOSFET N-CH 150V 75A TO268
Packaging: Bulk
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SRU6008DS2RP IXYS Description: 8 Amp High Temperature Sensitive
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+72.97 грн
Мінімальне замовлення: 2500
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SRU6008DS2RP IXYS Description: 8 Amp High Temperature Sensitive
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+195.95 грн
10+128.87 грн
100+92.58 грн
500+71.83 грн
1000+66.92 грн
Мінімальне замовлення: 2
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Q6008LH5TP Q6008LH5TP IXYS discrete-thyristors-lxx08xxqxx08xxqxx08xhx-series-datasheet?assetguid=aefcd26f-ea16-4366-a11e-a8164f679776 Description: 8 Amp Alternistor TRIAC-TO220 Is
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 100A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+278.09 грн
10+175.09 грн
100+122.57 грн
500+94.01 грн
1000+87.25 грн
Мінімальне замовлення: 2
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IXFX170N10 IXYS Description: MOSFET N-CH 170A PLUS247-3
Packaging: Bulk
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N4845EE360 IXYS media?resourcetype=datasheets&amp;itemid=a38836a5-5e37-4579-bbbb-5cc2031dee94&amp;filename=littelfuse_discrete_thyristors_phase_control_n4845ee3_0_datasheet.pdf Description: SCR 3.6KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.6 kV
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IXFJ26N50 IXYS Description: MOSFET N-CH 500V 14A TO247
Packaging: Bulk
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QV8025NH5TP IXYS media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
1+462.06 грн
10+381.42 грн
100+317.88 грн
500+263.22 грн
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QV8025NH4TP IXYS media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+462.91 грн
10+381.83 грн
100+318.19 грн
500+263.48 грн
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QV6025NH5TP IXYS media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
1+510.83 грн
50+390.02 грн
100+334.30 грн
500+278.87 грн
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QV6025NH5RP IXYS media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+308.58 грн
Мінімальне замовлення: 500
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QV6025NH5RP IXYS media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+510.83 грн
10+413.30 грн
100+334.30 грн
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IXFX44N50F IXYS Description: MOSFET N-CH 44A PLUS247-3
Packaging: Bulk
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IXFP8N85X IXFP8N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
2+254.13 грн
50+194.14 грн
100+166.41 грн
500+138.82 грн
1000+118.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
W6672TJ320 W6672TJ320 IXYS littelfuse_discrete_diodes_rectifier_capsule_type_w6672tx320-350_datasheet.pdf.pdf Description: DIODE GEN PURP 1.75KV 6672A -
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52 µs
Technology: Standard
Current - Average Rectified (Io): 6672A
Supplier Device Package: TO-200AF
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1750 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
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DSA10IM100UC-TRL DSA10IM100UC-TRL IXYS media?resourcetype=datasheets&itemid=6c105e50-9bef-4aa1-a12f-d22b8ecdd1f2&filename=power_semiconductor_discrete_diode_dsa10im100uc_datasheet.pdf Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DMA10IM1600UZ-TRL IXYS media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+53.87 грн
Мінімальне замовлення: 2500
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DLA10IM800UC-TRL DLA10IM800UC-TRL IXYS media?resourcetype=datasheets&itemid=03fcb1f2-8a0d-474a-80d0-fcae5d039a94&filename=Littelfuse-Power-Semiconductors-DLA10IM800UC-Datasheet Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DLA10IM800UC-TUB IXYS media?resourcetype=datasheets&itemid=03fcb1f2-8a0d-474a-80d0-fcae5d039a94&filename=Littelfuse-Power-Semiconductors-DLA10IM800UC-Datasheet Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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IXFN75N120SK IXFN75N120SK IXYS ixfn75n120sk-datasheet?assetguid=fcadf421-c9d1-4a70-a9b4-9c4c8a66ee8b Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+6958.24 грн
10+5581.49 грн
100+4850.06 грн
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N2900QL040 IXYS media?resourcetype=datasheets&amp;itemid=1241805b-12a2-4339-adae-bba64ade331f&amp;filename=littelfuse_discrete_thyristors_phase_control_n2900ql0_0_datasheet.pdf Description: SCR 400V 5520A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 2900 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 400 V
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IXYA60N65A5 IXYA60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf Description: IGBT TRENCH FS 650V 134A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+430.40 грн
50+218.70 грн
100+199.80 грн
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IXYH60N65A5 IXYH60N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf Description: IGBT TRENCH FS 650V 134A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
1+520.24 грн
30+288.42 грн
120+241.68 грн
510+194.73 грн
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IXYH100N65C5 IXYH100N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH100N65C5Datasheet.pdf Description: IGBT TRENCH FS 650V 230A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/255ns
Switching Energy: 560µJ (on), 780µJ (off)
Test Condition: 300V, 50A, 2Ohm, 15V
Gate Charge: 313 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 750 W
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IXYX180N65A5 IXYX180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYX180N65A5Datasheet.pdf Description: IGBT TRENCH FS 650V 400A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
1+1482.01 грн
30+898.13 грн
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IXYK180N65A5 IXYK180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYK180N65A5Datasheet.pdf Description: IGBT TRENCH FS 650V 400A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
1+1554.74 грн
25+965.76 грн
100+862.15 грн
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IXYN180N65A5 IXYN180N65A5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN180N65A5Datasheet.pdf Description: IGBT MOD 650V 340A 940W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
1+2266.65 грн
10+1605.18 грн
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IXTM13N80
Виробник: IXYS
Description: MOSFET N-CH TO-3
Packaging: Bulk
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N2154JK020 media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 200V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 200 V
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N2154JK040 media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 400 V
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N2154JK060 media?resourcetype=datasheets&amp;itemid=d9e5c5ad-fd0d-4bb5-97d7-a7e8428d2930&amp;filename=littelfuse_discrete_thyristors_phase_control_n2154jk0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 600V 4190A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 25000A @ 50Hz
Current - On State (It (AV)) (Max): 2154 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.58 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 4190 A
Voltage - Off State: 600 V
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N1806QK160 media?resourcetype=datasheets&amp;itemid=de1a8def-ed03-49ed-9e5b-17ba56eb975f&amp;filename=littelfuse_discrete_thyristors_phase_control_n1806qk1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.6KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.6 kV
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N1806QK180 media?resourcetype=datasheets&amp;itemid=de1a8def-ed03-49ed-9e5b-17ba56eb975f&amp;filename=littelfuse_discrete_thyristors_phase_control_n1806qk1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 3571A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1806 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.4 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3571 A
Voltage - Off State: 1.8 kV
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N1651QK200
Виробник: IXYS
Description: SCR 2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2 kV
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N1449QL220 media?resourcetype=datasheets&amp;itemid=da244957-1ece-407b-a166-441b04d1c415&amp;filename=littelfuse_discrete_thyristors_phase_control_n1449ql2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2.2KV 2790A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1410 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 2790 A
Voltage - Off State: 2.2 kV
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N1651QK220
Виробник: IXYS
Description: SCR 2.2KV 3253A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A @ 50Hz
Current - On State (It (AV)) (Max): 1651 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.65 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 3253 A
Voltage - Off State: 2.2 kV
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MCNA150PD2200YB littelfuse-power-semiconductors-mcna150pd2200yb-datasheet?assetguid=0e603e53-d7d6-4989-b0a4-2246df87b49b
MCNA150PD2200YB
Виробник: IXYS
Description: SCR MODULE 2.2KV 235A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4300A, 4650A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 150 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 235 A
Voltage - Off State: 2.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6645.92 грн
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IXTP60N020T
Виробник: IXYS
Description: MOSFET N-CH TO220AB
Packaging: Bulk
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MTI200WX75GD-SMD media?resourcetype=datasheets&itemid=b3c7aaa5-e71a-4780-b329-f524e185677a&filename=littelfuse%2520power%2520semiconductors%2520mti200wx75gd%2520datasheet.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 255A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 255A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 38V
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
на замовлення 819 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+2871.47 грн
Мінімальне замовлення: 13
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IXFK62N25
Виробник: IXYS
Description: MOSFET N-CH 62A TO264
Packaging: Bulk
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MTI145WX100GD-SMD
Виробник: IXYS
Description: MOSFET 6N-CH 100V 190A ISOPLUS
Packaging: Tube
Package / Case: ISOPLUS-DIL™
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 50V
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: ISOPLUS-DIL™
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IXFX220N15P
Виробник: IXYS
Description: MOSFET N-CH 220A PLUS247-3
Packaging: Bulk
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IXTA1970-TRL
Виробник: IXYS
Description: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
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W3477MC360 media?resourcetype=datasheets&itemid=7c4b0c2e-af24-4e38-b6a8-59985d94dbad&filename=littelfuse_discrete_diodes_rectifier_w3477mc__0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 3.6KV 3470A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 µs
Technology: Standard
Current - Average Rectified (Io): 3470A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
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IXYH30N120C4H1 ixyh30n120c4h1?assetguid=25d3ae45-9a2b-4c95-83ec-2306b0257b09
IXYH30N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 94A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
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IXGT32N120A3-TRL
Виробник: IXYS
Description: IGBT PT 1200V 75A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268HV (IXGT)
IGBT Type: PT
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
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IXFN32N120 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn32n120_datasheet.pdf.pdf
IXFN32N120
Виробник: IXYS
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
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IXTP36N30P-PDP
Виробник: IXYS
Description: MOSFET N-CH TO220AB
Packaging: Bulk
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W0944WC120 media?resourcetype=datasheets&itemid=202e1f93-90c7-4370-8f86-6f993e268287&filename=littelfuse_discrete_diodes_rectifier_w0944wc1_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
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W0944WC150 media?resourcetype=datasheets&itemid=202e1f93-90c7-4370-8f86-6f993e268287&filename=littelfuse_discrete_diodes_rectifier_w0944wc1_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.5KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
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MDD72-14N1B MDD72-14N1B.pdf
MDD72-14N1B
Виробник: IXYS
Description: DIODE MOD GP 1400V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1400 V
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IXYH55N120B4H1 ixyh55n120b4h1-datasheet?assetguid=9a53bcd5-00c7-411c-b283-f63ed530e53f
IXYH55N120B4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 138A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1247.55 грн
30+744.68 грн
120+649.51 грн
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IXYH55N120C4H1 media?resourcetype=datasheets&itemid=50f433fc-96b9-4ed1-8cb3-663cb80afb91&filename=power_semiconductor_discrete_igbt_ixyh55n120c4h1_datasheet.pdf
IXYH55N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
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MCMA110PD1800TB Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F
MCMA110PD1800TB
Виробник: IXYS
Description: SCR MODULE 1.8KV 170A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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M1022LC120
Виробник: IXYS
Description: DIODE STANDARD 1200V 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
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M1022LC160 media?resourcetype=datasheets&itemid=0e88a28a-ecb9-478a-b794-1e7828244a86&filename=littelfuse_discrete_diodes_fast_recovery_m1022lc__0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
товару немає в наявності
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IXYK30N170CV1 media?resourcetype=datasheets&itemid=dfbd999f-e3fd-4199-b6fd-09bd4c2655b5&filename=littelfuse_discrete_igbts_xpt_ixy_30n170cv1_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
товару немає в наявності
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W3708MC320
Виробник: IXYS
Description: DIODE STANDARD 3200V 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3200 V
товару немає в наявності
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W3708MC350
Виробник: IXYS
Description: DIODE STANDARD 3500V 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3500 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3500 V
товару немає в наявності
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IXKT70N60C5
Виробник: IXYS
Description: MOSFET P-CH 600V 68A TO-268
Packaging: Bulk
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IXTT75N15
Виробник: IXYS
Description: MOSFET N-CH 150V 75A TO268
Packaging: Bulk
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SRU6008DS2RP
Виробник: IXYS
Description: 8 Amp High Temperature Sensitive
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.97 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SRU6008DS2RP
Виробник: IXYS
Description: 8 Amp High Temperature Sensitive
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.95 грн
10+128.87 грн
100+92.58 грн
500+71.83 грн
1000+66.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
Q6008LH5TP discrete-thyristors-lxx08xxqxx08xxqxx08xhx-series-datasheet?assetguid=aefcd26f-ea16-4366-a11e-a8164f679776
Q6008LH5TP
Виробник: IXYS
Description: 8 Amp Alternistor TRIAC-TO220 Is
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 100A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.09 грн
10+175.09 грн
100+122.57 грн
500+94.01 грн
1000+87.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFX170N10
Виробник: IXYS
Description: MOSFET N-CH 170A PLUS247-3
Packaging: Bulk
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N4845EE360 media?resourcetype=datasheets&amp;itemid=a38836a5-5e37-4579-bbbb-5cc2031dee94&amp;filename=littelfuse_discrete_thyristors_phase_control_n4845ee3_0_datasheet.pdf
Виробник: IXYS
Description: SCR 3.6KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.6 kV
товару немає в наявності
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IXFJ26N50
Виробник: IXYS
Description: MOSFET N-CH 500V 14A TO247
Packaging: Bulk
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QV8025NH5TP media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf
Виробник: IXYS
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.06 грн
10+381.42 грн
100+317.88 грн
500+263.22 грн
В кошику  од. на суму  грн.
QV8025NH4TP media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf
Виробник: IXYS
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.91 грн
10+381.83 грн
100+318.19 грн
500+263.48 грн
В кошику  од. на суму  грн.
QV6025NH5TP media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+510.83 грн
50+390.02 грн
100+334.30 грн
500+278.87 грн
В кошику  од. на суму  грн.
QV6025NH5RP media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+308.58 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
QV6025NH5RP media?resourcetype=datasheets&itemid=4751cd4c-587b-4f42-85cc-7db84109d25b&filename=littelfuse_thyristor_qvxx25xhx_datasheet.pdf
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+510.83 грн
10+413.30 грн
100+334.30 грн
В кошику  од. на суму  грн.
IXFX44N50F
Виробник: IXYS
Description: MOSFET N-CH 44A PLUS247-3
Packaging: Bulk
товару немає в наявності
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IXFP8N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n85x_datasheet.pdf.pdf
IXFP8N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+254.13 грн
50+194.14 грн
100+166.41 грн
500+138.82 грн
1000+118.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
W6672TJ320 littelfuse_discrete_diodes_rectifier_capsule_type_w6672tx320-350_datasheet.pdf.pdf
W6672TJ320
Виробник: IXYS
Description: DIODE GEN PURP 1.75KV 6672A -
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52 µs
Technology: Standard
Current - Average Rectified (Io): 6672A
Supplier Device Package: TO-200AF
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1750 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
товару немає в наявності
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DSA10IM100UC-TRL media?resourcetype=datasheets&itemid=6c105e50-9bef-4aa1-a12f-d22b8ecdd1f2&filename=power_semiconductor_discrete_diode_dsa10im100uc_datasheet.pdf
DSA10IM100UC-TRL
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товару немає в наявності
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DMA10IM1600UZ-TRL media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+53.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
DLA10IM800UC-TRL media?resourcetype=datasheets&itemid=03fcb1f2-8a0d-474a-80d0-fcae5d039a94&filename=Littelfuse-Power-Semiconductors-DLA10IM800UC-Datasheet
DLA10IM800UC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
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DLA10IM800UC-TUB media?resourcetype=datasheets&itemid=03fcb1f2-8a0d-474a-80d0-fcae5d039a94&filename=Littelfuse-Power-Semiconductors-DLA10IM800UC-Datasheet
Виробник: IXYS
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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IXFN75N120SK ixfn75n120sk-datasheet?assetguid=fcadf421-c9d1-4a70-a9b4-9c4c8a66ee8b
IXFN75N120SK
Виробник: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6958.24 грн
10+5581.49 грн
100+4850.06 грн
В кошику  од. на суму  грн.
N2900QL040 media?resourcetype=datasheets&amp;itemid=1241805b-12a2-4339-adae-bba64ade331f&amp;filename=littelfuse_discrete_thyristors_phase_control_n2900ql0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 5520A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 2900 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 400 V
товару немає в наявності
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IXYA60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA60N65A5Datasheet.pdf
IXYA60N65A5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 134A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.40 грн
50+218.70 грн
100+199.80 грн
В кошику  од. на суму  грн.
IXYH60N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH60N65A5Datasheet.pdf
IXYH60N65A5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 134A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
на замовлення 1090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+520.24 грн
30+288.42 грн
120+241.68 грн
510+194.73 грн
В кошику  од. на суму  грн.
IXYH100N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYH100N65C5Datasheet.pdf
IXYH100N65C5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 230A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/255ns
Switching Energy: 560µJ (on), 780µJ (off)
Test Condition: 300V, 50A, 2Ohm, 15V
Gate Charge: 313 nC
Current - Collector (Ic) (Max): 230 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 560 A
Power - Max: 750 W
товару немає в наявності
В кошику  од. на суму  грн.
IXYX180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYX180N65A5Datasheet.pdf
IXYX180N65A5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 400A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
на замовлення 79 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1482.01 грн
30+898.13 грн
В кошику  од. на суму  грн.
IXYK180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYK180N65A5Datasheet.pdf
IXYK180N65A5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 400A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1554.74 грн
25+965.76 грн
100+862.15 грн
В кошику  од. на суму  грн.
IXYN180N65A5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN180N65A5Datasheet.pdf
IXYN180N65A5
Виробник: IXYS
Description: IGBT MOD 650V 340A 940W SOT-227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2266.65 грн
10+1605.18 грн
В кошику  од. на суму  грн.
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