| Фото | Назва | Виробник | Інформація |
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| IXFT140N10P-TRL | IXYS |
Description: MOSFET N-CH 100V 140A TO268 Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
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IXFK210N30X3 | IXYS |
 Description: MOSFET N-CH 300V 210A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Power Dissipation (Max): 1250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: TO-264 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V |
на замовлення 650 шт: термін постачання 21-31 дні (днів) |
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IXFN44N50U2 | IXYS |
Description: MOSFET N-CH 500V 44A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SOT-227B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
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IXTH36P15P | IXYS |
Description: MOSFET P-CH 150V 36A TO247 |
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IXTR36P15P | IXYS |
Description: MOSFET P-CH 150V 22A ISOPLUS247 |
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IXTU4N70X2 | IXYS |
Description: MOSFET N-CH 700V 4A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V |
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IXTA4N70X2 | IXYS |
Description: MOSFET N-CH 700V 4A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V |
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IXTY1R6N50D2-TRL | IXYS |
Description: MOSFET N-CH 500V 1.6A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V |
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| P0848YC06B | IXYS | Description: SCR 600MV 1713A W58 |
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IXTA44P15T-TRL | IXYS |
Description: MOSFET P-CH 150V 44A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 22400 шт: термін постачання 21-31 дні (днів) |
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IXYH40N120A4 | IXYS |
Description: IGBT 1200V 40A GENX4 XPT TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-247 (IXYH) IGBT Type: PT Td (on/off) @ 25°C: 22ns/204ns Switching Energy: 2.3mJ (on), 3.75mJ (off) Test Condition: 600V, 32A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 275 A Power - Max: 600 W |
на замовлення 360 шт: термін постачання 21-31 дні (днів) |
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IXYT40N120A4HV | IXYS |
Description: IGBT 1200V 40A GNX4 XPT TO-268HV Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A Supplier Device Package: TO-268HV (IXYT) IGBT Type: PT Td (on/off) @ 25°C: 22ns/204ns Switching Energy: 2.3mJ (on), 3.75mJ (off) Test Condition: 600V, 32A, 5Ohm, 15V Gate Charge: 90 nC Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 275 A Power - Max: 600 W |
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| IXG100IF1200HF | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD |
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| N0465WN160 | IXYS |
Description: SCR 1.6KV 920A W90 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Current - Hold (Ih) (Max): 250 mA Current - Gate Trigger (Igt) (Max): 250 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz Current - On State (It (AV)) (Max): 465 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 2.09 V Current - Off State (Max): 50 mA Supplier Device Package: W90 Current - On State (It (RMS)) (Max): 920 A Voltage - Off State: 1.6 kV |
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| N3012ZC200 | IXYS |
Description: SCR 2KV 5922A W13 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz Current - On State (It (AV)) (Max): 3012 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.4 V Current - Off State (Max): 200 mA Supplier Device Package: W13 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 5922 A Voltage - Off State: 2 kV |
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| N3012ZC260 | IXYS |
Description: SCR 2.6KV 5922A W13 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz Current - On State (It (AV)) (Max): 3012 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.4 V Current - Off State (Max): 200 mA Supplier Device Package: W13 Part Status: Discontinued at Digi-Key Current - On State (It (RMS)) (Max): 5922 A Voltage - Off State: 2.6 kV |
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IXFH220N06T3 | IXYS |
Description: MOSFET N-CH 60V 220A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 440W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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| IXFT15N100Q3-TRL | IXYS | Description: MOSFET N-CH 1000V 15A TO268 |
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| IXFD15N100-8X | IXYS | Description: MOSFET N-CH |
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| IXFJ15N100Q | IXYS | Description: MOSFET N-CH TO-220 |
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| IXFR15N100Q | IXYS |
Description: MOSFET N-CH ISOPLUS247 Packaging: Tube Part Status: Obsolete |
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IXTP8N70X2M | IXYS |
Description: MOSFET N-CH 700V 4A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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| W0642WC160 | IXYS | Description: RECTIFIER DIODE |
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| IXBT2N250-TR | IXYS | Description: IXBT2N250 TR |
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| MMIX4B22N300 | IXYS |
Description: IGBT TRANS 3000V 38A Packaging: Tube Package / Case: 24-SMD Module, 9 Leads Mounting Type: Surface Mount Input: Standard Configuration: Full Bridge Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A NTC Thermistor: No Supplier Device Package: 24-SMPD Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 3000 V Power - Max: 150 W Current - Collector Cutoff (Max): 35 µA Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V |
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IXFA50N20X3 | IXYS |
Description: MOSFET N-CH 200V 50A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
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| IXIDM1401_1505_M | IXYS |
Description: POWER MODULE Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000Vrms Part Status: Obsolete Current: 10 A Voltage: 15 V |
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| IXIDM1403_1505_M | IXYS |
Description: POWER MODULE Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000Vrms Part Status: Obsolete Current: 30 A Voltage: 15 V |
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| IXIDM1401 | IXYS |
Description: ISOLATED GATE DRIVER Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000Vrms Part Status: Discontinued at Digi-Key Current: 10 A Voltage: 15 V |
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| IXIDM1401_1515_M | IXYS |
Description: DVR MOD +15V -15V 10A MOLDED Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000VDC Part Status: Obsolete Current: 10 A Voltage: 15 V |
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| IXIDM1401_1515_O | IXYS |
Description: DVR MOD +15V -15V 10A OPEN FRAME Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000VDC Part Status: Obsolete Current: 10 A Voltage: 15 V |
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| IXIDM1403_1515_M | IXYS |
Description: DVR MOD +15V -15V 30A MOLDED Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000VDC Part Status: Obsolete Current: 30 A Voltage: 15 V |
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| IXIDM1403_1515_O | IXYS |
Description: DVR MOD +15V -15V 30A OPEN FRAME Packaging: Tray Package / Case: Module Mounting Type: Surface Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4000VDC Part Status: Obsolete Current: 30 A Voltage: 15 V |
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| W3842MC240 | IXYS |
Description: DIODE GEN PURP 2.4KV 3842A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 µs Technology: Standard Current - Average Rectified (Io): 3842A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A Current - Reverse Leakage @ Vr: 50 mA @ 2400 V |
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| W3842MC280 | IXYS |
Description: DIODE GEN PURP 2.8KV 3842A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 34 µs Technology: Standard Current - Average Rectified (Io): 3842A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 2800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A Current - Reverse Leakage @ Vr: 50 mA @ 2800 V |
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| IXXH40N65C4D1 | IXYS | Description: DISC IGBT XPT-GENX4 TO-247AD |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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IXTC36P15P | IXYS |
Description: MOSFET P-CH 150V 22A ISOPLUS220 |
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IXTA06N120P-TRL | IXYS |
Description: MOSFET N-CH 1200V 600MA TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Tc) Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V |
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DNA30EM2200PZ-TRL | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263AA Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
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DNA30EM2200PZ-TRL | IXYS |
Description: DIODE GEN PURP 2.2KV 30A TO263AA Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 7pF @ 700V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263AA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 2200 V |
на замовлення 608 шт: термін постачання 21-31 дні (днів) |
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| DSEP29-12B | IXYS |
Description: DIODE GEN PURP 1.2KV 30A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 600V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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IXYP30N65C3 | IXYS | Description: DISC IGBT XPT-GENX3 TO-220AB/FP |
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| R1446NC12E | IXYS |
Description: SCR 1.2KV 2940A W11 Packaging: Box Package / Case: TO-200AC, K-PUK Mounting Type: Clamp On SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz Current - On State (It (AV)) (Max): 1446 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 150 mA Supplier Device Package: W11 Current - On State (It (RMS)) (Max): 2940 A Voltage - Off State: 1.2 kV |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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| R1446NC12D | IXYS | Description: SCR 1.2KV 2940A W11 |
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| R1446NC12C | IXYS |
Description: SCR 1.2KV 2940A W11 Packaging: Box Package / Case: TO-200AC, K-PUK Mounting Type: Clamp On SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz Current - On State (It (AV)) (Max): 1446 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.7 V Current - Off State (Max): 150 mA Supplier Device Package: W11 Current - On State (It (RMS)) (Max): 2940 A Voltage - Off State: 1.2 kV |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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IXYX110N120A4 | IXYS |
Description: IGBT 1200V 110A GNX4 XPT PLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: TO-247 (IXTH) IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 1.5Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 375 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1360 W |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
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IXYK110N120A4 | IXYS |
Description: IGBT 1200V 110A GENX4 XPT TO-264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 1.5Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 375 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 900 A Power - Max: 1360 W |
на замовлення 1132 шт: термін постачання 21-31 дні (днів) |
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IXYN110N120A4 | IXYS |
Description: IGBT PT 1200V 275A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A Supplier Device Package: SOT-227B IGBT Type: PT Td (on/off) @ 25°C: 42ns/550ns Switching Energy: 2.5mJ (on), 8.4mJ (off) Test Condition: 600V, 50A, 2Ohm, 15V Gate Charge: 305 nC Part Status: Active Current - Collector (Ic) (Max): 275 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 950 A Power - Max: 830 W |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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IXTP12N70X2 | IXYS |
Description: MOSFET N-CH 700V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
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IXTP12N70X2M | IXYS |
Description: MOSFET N-CH 700V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
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IXFA20N85XHV-TRL | IXYS | Description: MOSFET N-CH 850V 20A TO263HV |
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IXFJ20N85X | IXYS |
Description: MOSFET N-CH 850V 9.5A ISO TO247 |
товар відсутній |
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IXFN170N65X2 | IXYS |
Description: MOSFET N-CH 650V 170A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V Power Dissipation (Max): 1170W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V |
на замовлення 14 шт: термін постачання 21-31 дні (днів) |
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IXFN400N15X3 | IXYS |
Description: MOSFET N-CH 150V 400A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Power Dissipation (Max): 695W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V |
на замовлення 173 шт: термін постачання 21-31 дні (днів) |
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IXFT32N100XHV | IXYS |
Description: MOSFET N-CH 1000V 32A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V |
на замовлення 794 шт: термін постачання 21-31 дні (днів) |
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| N6012ZD020 | IXYS | Description: SCR 200MV 11795A W46 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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| MCB40P1200LB-TUB | IXYS |
Description: POWER MOSFET Packaging: Tube Package / Case: 9-SMD Power Module Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 58A Supplier Device Package: SMPD Part Status: Active |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
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IXFP36N20X3M | IXYS |
Description: MOSFET N-CH 200V 36A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 500µA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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IXTX6N200P3HV | IXYS |
Description: MOSFET N-CH 2000V 6A TO247PLUSHV Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247PLUS-HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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IXYH8N250CHV | IXYS |
Description: IGBT Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 5 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A Supplier Device Package: TO-247HV Td (on/off) @ 25°C: 11ns/180ns Switching Energy: 2.6mJ (on), 1.07mJ (off) Test Condition: 1250V, 8A, 15Ohm, 15V Gate Charge: 45 nC Part Status: Active Current - Collector (Ic) (Max): 29 A Voltage - Collector Emitter Breakdown (Max): 2500 V Current - Collector Pulsed (Icm): 70 A Power - Max: 280 W |
товар відсутній |
| IXFT140N10P-TRL |
Виробник: IXYS
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
товар відсутній
| IXFK210N30X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 300V 210A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Description: MOSFET N-CH 300V 210A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-264
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
на замовлення 650 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2172.52 грн |
| 25+ | 1733.89 грн |
| 100+ | 1625.53 грн |
| IXFN44N50U2 |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 500V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
товар відсутній
| IXTU4N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Description: MOSFET N-CH 700V 4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товар відсутній
| IXTA4N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
Description: MOSFET N-CH 700V 4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
товар відсутній
| IXTY1R6N50D2-TRL |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
| IXTA44P15T-TRL |
|
Виробник: IXYS
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 22400 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 259.14 грн |
| 1600+ | 224.59 грн |
| 2400+ | 210.45 грн |
| IXYH40N120A4 |
|
Виробник: IXYS
Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
Description: IGBT 1200V 40A GENX4 XPT TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
на замовлення 360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 576.56 грн |
| IXYT40N120A4HV |
|
Виробник: IXYS
Description: IGBT 1200V 40A GNX4 XPT TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
Description: IGBT 1200V 40A GNX4 XPT TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/204ns
Switching Energy: 2.3mJ (on), 3.75mJ (off)
Test Condition: 600V, 32A, 5Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 275 A
Power - Max: 600 W
товар відсутній
| N0465WN160 |
Виробник: IXYS
Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
Description: SCR 1.6KV 920A W90
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 250 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5000A @ 50Hz
Current - On State (It (AV)) (Max): 465 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2.09 V
Current - Off State (Max): 50 mA
Supplier Device Package: W90
Current - On State (It (RMS)) (Max): 920 A
Voltage - Off State: 1.6 kV
товар відсутній
| N3012ZC200 |
|
Виробник: IXYS
Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
Description: SCR 2KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2 kV
товар відсутній
| N3012ZC260 |
|
Виробник: IXYS
Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
Description: SCR 2.6KV 5922A W13
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 49700A @ 50Hz
Current - On State (It (AV)) (Max): 3012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 200 mA
Supplier Device Package: W13
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5922 A
Voltage - Off State: 2.6 kV
товар відсутній
| IXFH220N06T3 |
|
Виробник: IXYS
Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
Description: MOSFET N-CH 60V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 440W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 394.55 грн |
| 30+ | 303.43 грн |
| 120+ | 271.49 грн |
| IXFR15N100Q |
товар відсутній
| IXTP8N70X2M |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.47 грн |
| 10+ | 187.85 грн |
| MMIX4B22N300 |
|
Виробник: IXYS
Description: IGBT TRANS 3000V 38A
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
Description: IGBT TRANS 3000V 38A
Packaging: Tube
Package / Case: 24-SMD Module, 9 Leads
Mounting Type: Surface Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 22A
NTC Thermistor: No
Supplier Device Package: 24-SMPD
Part Status: Active
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 3000 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 35 µA
Input Capacitance (Cies) @ Vce: 2.2 nF @ 25 V
товар відсутній
| IXFA50N20X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
товар відсутній
| IXIDM1401_1505_M |
|
Виробник: IXYS
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
| IXIDM1403_1505_M |
|
Виробник: IXYS
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Description: POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
| IXIDM1401 |
|
Виробник: IXYS
Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
Description: ISOLATED GATE DRIVER
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000Vrms
Part Status: Discontinued at Digi-Key
Current: 10 A
Voltage: 15 V
товар відсутній
| IXIDM1401_1515_M |
|
Виробник: IXYS
Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Description: DVR MOD +15V -15V 10A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
| IXIDM1401_1515_O |
|
Виробник: IXYS
Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
Description: DVR MOD +15V -15V 10A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 10 A
Voltage: 15 V
товар відсутній
| IXIDM1403_1515_M |
|
Виробник: IXYS
Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Description: DVR MOD +15V -15V 30A MOLDED
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
| IXIDM1403_1515_O |
|
Виробник: IXYS
Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
Description: DVR MOD +15V -15V 30A OPEN FRAME
Packaging: Tray
Package / Case: Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: Half Bridge
Voltage - Isolation: 4000VDC
Part Status: Obsolete
Current: 30 A
Voltage: 15 V
товар відсутній
| W3842MC240 |
Виробник: IXYS
Description: DIODE GEN PURP 2.4KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
Description: DIODE GEN PURP 2.4KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2400 V
товар відсутній
| W3842MC280 |
Виробник: IXYS
Description: DIODE GEN PURP 2.8KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
Description: DIODE GEN PURP 2.8KV 3842A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 µs
Technology: Standard
Current - Average Rectified (Io): 3842A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 2800 V
товар відсутній
| IXXH40N65C4D1 |
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Description: DISC IGBT XPT-GENX4 TO-247AD
на замовлення 540 шт:
термін постачання 21-31 дні (днів)| IXTA06N120P-TRL |
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
товар відсутній
| DNA30EM2200PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
товар відсутній
| DNA30EM2200PZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
Description: DIODE GEN PURP 2.2KV 30A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 700V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 2200 V
на замовлення 608 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 335.55 грн |
| 10+ | 271.02 грн |
| 100+ | 219.23 грн |
| DSEP29-12B |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.76 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 319.27 грн |
| R1446NC12E |
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27766.5 грн |
| R1446NC12C |
Виробник: IXYS
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 2940A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21500A @ 50Hz
Current - On State (It (AV)) (Max): 1446 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 150 mA
Supplier Device Package: W11
Current - On State (It (RMS)) (Max): 2940 A
Voltage - Off State: 1.2 kV
на замовлення 12 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 32058.23 грн |
| 10+ | 29710.46 грн |
| IXYX110N120A4 |
|
Виробник: IXYS
Description: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
Description: IGBT 1200V 110A GNX4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 7 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2468.26 грн |
| IXYK110N120A4 |
|
Виробник: IXYS
Description: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
Description: IGBT 1200V 110A GENX4 XPT TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 1.5Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 375 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1360 W
на замовлення 1132 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2491.01 грн |
| 25+ | 1988.74 грн |
| 100+ | 1864.46 грн |
| IXYN110N120A4 |
|
Виробник: IXYS
Description: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
Description: IGBT PT 1200V 275A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 110A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 42ns/550ns
Switching Energy: 2.5mJ (on), 8.4mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 305 nC
Part Status: Active
Current - Collector (Ic) (Max): 275 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 950 A
Power - Max: 830 W
на замовлення 37 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2981.53 грн |
| 10+ | 2558.32 грн |
| IXTP12N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Description: MOSFET N-CH 700V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
товар відсутній
| IXTP12N70X2M |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Description: MOSFET N-CH 700V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
товар відсутній
| IXFN170N65X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
Description: MOSFET N-CH 650V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3705.94 грн |
| 10+ | 3244.2 грн |
| IXFN400N15X3 |
|
Виробник: IXYS
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
Description: MOSFET N-CH 150V 400A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3044.8 грн |
| 10+ | 2612.4 грн |
| 100+ | 2293.05 грн |
| IXFT32N100XHV |
|
Виробник: IXYS
Description: MOSFET N-CH 1000V 32A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
Description: MOSFET N-CH 1000V 32A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4075 pF @ 25 V
на замовлення 794 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1511.38 грн |
| 30+ | 1206.63 грн |
| 120+ | 1131.21 грн |
| 510+ | 905.9 грн |
| N6012ZD020 |
Виробник: IXYS
Description: SCR 200MV 11795A W46
Description: SCR 200MV 11795A W46
на замовлення 1 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 47179.87 грн |
| MCB40P1200LB-TUB |
|
Виробник: IXYS
Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
Description: POWER MOSFET
Packaging: Tube
Package / Case: 9-SMD Power Module
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 58A
Supplier Device Package: SMPD
Part Status: Active
на замовлення 13 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16151.03 грн |
| 10+ | 14895.72 грн |
| IXFP36N20X3M |
|
Виробник: IXYS
Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
Description: MOSFET N-CH 200V 36A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 338.39 грн |
| 10+ | 292.93 грн |
| 100+ | 240 грн |
| IXTX6N200P3HV |
|
Виробник: IXYS
Description: MOSFET N-CH 2000V 6A TO247PLUSHV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
Description: MOSFET N-CH 2000V 6A TO247PLUSHV
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 3A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247PLUS-HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
товар відсутній
| IXYH8N250CHV |
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Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 5 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 8A
Supplier Device Package: TO-247HV
Td (on/off) @ 25°C: 11ns/180ns
Switching Energy: 2.6mJ (on), 1.07mJ (off)
Test Condition: 1250V, 8A, 15Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 29 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 70 A
Power - Max: 280 W
товар відсутній