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IXTA8N70X2 IXTA8N70X2 IXYS littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CHANNEL 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
2+327.08 грн
50+162.57 грн
100+147.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSP45-12AZ-TRL DSP45-12AZ-TRL IXYS littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
1+630.15 грн
10+414.96 грн
100+329.65 грн
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MCMA700PD1600CB-PC IXYS Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+14673.36 грн
Мінімальне замовлення: 3
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MMPA60P1000TLA IXYS Description: MOSFET 2N-CH 1000V Y3-LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V (1kV)
Supplier Device Package: Y3-Li
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R0633YC12E IXYS media?resourcetype=datasheets&amp;itemid=e6ab2341-76e5-4db4-9a7d-15edd49d1765&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_r0633yc12__datasheet.pdf Description: SCR 1.2KV 1268A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
Current - On State (It (AV)) (Max): 633 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 60 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1268 A
Voltage - Off State: 1.2 kV
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R0633YC12D IXYS media?resourcetype=datasheets&amp;itemid=e6ab2341-76e5-4db4-9a7d-15edd49d1765&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_r0633yc12__datasheet.pdf Description: SCR 1.2KV 1268A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
Current - On State (It (AV)) (Max): 633 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 60 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1268 A
Voltage - Off State: 1.2 kV
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DPG30C200PC-TUB DPG30C200PC-TUB IXYS media?resourcetype=datasheets&itemid=2e521d97-445d-4ff4-8f79-d563c29b430e&filename=littelfuse%2520power%2520semiconductors%2520dpg30c200pc%2520datasheet.pdf Description: DIODE ARRAY GP 200V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
2+222.75 грн
Мінімальне замовлення: 2
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DPG30C200PC-TRL DPG30C200PC-TRL IXYS media?resourcetype=datasheets&itemid=2E521D97-445D-4FF4-8F79-D563C29B430E&filename=Littelfuse-Power-Semiconductors-DPG30C200PC-Datasheet Description: DIODE ARRAY GP 200V 15A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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DPG30P400PJ IXYS media?resourcetype=datasheets&itemid=6bdc259e-f343-48fc-9372-c3e59ef43fdc&filename=littelfuse%2520power%2520semiconductors%2520dpg30p400pj%2520datasheet.pdf Description: DIODE GP 400V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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IXTP4N70X2M IXTP4N70X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp4n70x2m_datasheet.pdf.pdf Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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DMA100A1600NB IXYS Description: PWRDIODEDISC-RECTIFIER SOT-227UI
Packaging: Tube
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
100+1274.97 грн
Мінімальне замовлення: 100
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DPF120C600HB DPF120C600HB IXYS media?resourcetype=datasheets&itemid=b67da6cc-1dac-4997-9a5b-e2f9b0a0af94&filename=littelfuse-power-semiconductor-discrete-diode-dpf120c600hb-datasheet Description: DIODE ARRAY GP 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSA20C60PB DSA20C60PB IXYS media?resourcetype=datasheets&itemid=780d1b58-b452-4ec5-ad9a-ad9bb2758da2&filename=power_semiconductor_discrete_diode_dsa20c60pb_datasheet.pdf Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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MDMA60B800MB IXYS Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
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MDMA60B1600MB IXYS Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
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IXBOD2-32RD IXYS Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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IXBOD2-36RD IXYS Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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DSA10IM100UC-TUB DSA10IM100UC-TUB IXYS Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DPG60IM300PC-TRL DPG60IM300PC-TRL IXYS Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+228.05 грн
Мінімальне замовлення: 800
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DPG60IM300PC-TRL DPG60IM300PC-TRL IXYS Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
1+418.17 грн
10+309.62 грн
100+261.32 грн
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IXYX25N250CV1 IXYX25N250CV1 IXYS littelfuse_discrete_igbts_xpt_ixy_25n250cv1_datasheet.pdf.pdf Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2130.58 грн
30+1662.47 грн
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IXYX200N65B5 IXYX200N65B5 IXYS Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 470A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 77ns/470ns
Switching Energy: 600µJ (on), 3.4mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 790 nC
Current - Collector (Ic) (Max): 470 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.13 kA
Power - Max: 1.61 kW
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MPA95-06DA MPA95-06DA IXYS mpa95-06da?assetguid=8119a103-e612-4a25-ba8d-46aef97e7685 Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 50 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+2692.83 грн
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IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 122A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/200ns
Switching Energy: 550µJ (on), 600µJ (off)
Test Condition: 300V, 25A, 5Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 395 W
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DFE25I600HA IXYS media?resourcetype=datasheets&itemid=4c9232b9-b095-415e-89c9-861c06979a99&filename=littelfuse%2520power%2520semiconductors%2520dfe25i600ha%2520datasheet.pdf Description: DIODE ARRAY GP 600V 25A TO-247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DMA50I1600HA DMA50I1600HA IXYS media?resourcetype=datasheets&itemid=5e17cc20-6050-441a-beee-e25309925071&filename=Littelfuse-Power-Semiconductors-DMA50I1600HA-Datasheet Description: DIODE STANDARD 1600V 50A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W5139TJ480 IXYS littelfusediscretediodesrectifiercapsuletypew5139t450datasheetpdf.pdf Description: DIODE STANDARD 4800V 5139A W89
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 57 µs
Technology: Standard
Current - Average Rectified (Io): 5139A
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
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M0955LC250 IXYS Description: DIODE STANDARD 2500V 955A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 955A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
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IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+745.25 грн
30+426.10 грн
120+362.13 грн
В кошику  од. на суму  грн.
IXD2012NTR IXD2012NTR IXYS ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
2500+28.30 грн
5000+26.56 грн
7500+26.22 грн
12500+24.25 грн
17500+24.04 грн
25000+23.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IXD2012NTR IXD2012NTR IXYS ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
6+60.45 грн
10+41.62 грн
25+37.54 грн
100+30.94 грн
250+28.89 грн
500+27.66 грн
1000+26.21 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
VUO35-16NO1 IXYS Description: BRIDGE RECT 3P 1.6KV 35A PWS-A
Packaging: Bulk
Package / Case: PWS-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W2624NC240 IXYS Description: DIODE STANDARD 2400V 2624A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2624A
Supplier Device Package: W5
Voltage - DC Reverse (Vr) (Max): 2400 V
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W2054NC420 IXYS Description: DIODE STANDARD 4200V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W1856NC460 IXYS Description: DIODE STANDARD 4600V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
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W1856NC480 IXYS Description: DIODE STANDARD 4800V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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SJ4008DS2TP SJ4008DS2TP IXYS SJxx08xSx_SJxx08xx_Series.PDF Description: 8 AMP HIGH TEMPERATURE SENSITIVE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 400 V
на замовлення 689 шт:
термін постачання 21-31 дні (днів)
2+204.53 грн
10+127.02 грн
100+87.03 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCMA700P1600NCA MCMA700P1600NCA IXYS Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
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MCMA700PD1600CB MCMA700PD1600CB IXYS Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
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MCMA700P1800CA IXYS Description: SCR MODULE 1.8KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.8 kV
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IXSA80N120L2-7TR IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+452.55 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
IXSA80N120L2-7TR IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+926.59 грн
10+620.76 грн
100+467.49 грн
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W108CED180 IXYS Description: DIODE STANDARD 1800V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 1800 V
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W108CED220 IXYS Description: DIODE STANDARD 2200V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 2200 V
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IXFP34N65X2W IXYS Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
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IXFH34N65X2W IXYS ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+621.04 грн
30+349.47 грн
120+294.93 грн
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DPG60IM300PC-TUB DPG60IM300PC-TUB IXYS Description: DIODE STANDARD 300V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 150V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IRFP460 IRFP460 IXYS DS_238_IRFP460.pdf Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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N3565HA160 IXYS Description: SCR 1.6KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.6 kV
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N3565HA180 IXYS Description: SCR 1.8KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.8 kV
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IXSA40N120L2-7TR IXSA40N120L2-7TR IXYS ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0 Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+255.68 грн
Мінімальне замовлення: 800
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IXSA40N120L2-7TR IXSA40N120L2-7TR IXYS ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0 Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 1597 шт:
термін постачання 21-31 дні (днів)
1+590.40 грн
10+387.29 грн
100+301.36 грн
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DSA15IM45UC-TUB DSA15IM45UC-TUB IXYS Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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DSA15IM45UC-TRL DSA15IM45UC-TRL IXYS Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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IXFM1633 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM1766 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM35N30 IXYS Description: MOSFET N-CH 300V 35A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N85XHV IXFT30N85XHV IXYS Description: MOSFET N-CH 850V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IXFT6N100F IXFT6N100F IXYS Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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N0910LC200 IXYS Description: SCR 2KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10.1A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2 kV
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IXTA8N70X2 littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6
IXTA8N70X2
Виробник: IXYS
Description: MOSFET N-CHANNEL 700V 8A TO220-3
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.08 грн
50+162.57 грн
100+147.80 грн
Мінімальне замовлення: 2
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DSP45-12AZ-TRL littelfuse-power-semiconductors-dsp45-12az-datasheet?assetguid=349b9449-ba5f-4e77-88ae-4ec5807e9b7b
DSP45-12AZ-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 1200V 45A TO268AA
Packaging: Cut Tape (CT)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+630.15 грн
10+414.96 грн
100+329.65 грн
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MCMA700PD1600CB-PC
Виробник: IXYS
Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+14673.36 грн
Мінімальне замовлення: 3
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MMPA60P1000TLA
Виробник: IXYS
Description: MOSFET 2N-CH 1000V Y3-LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V (1kV)
Supplier Device Package: Y3-Li
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R0633YC12E media?resourcetype=datasheets&amp;itemid=e6ab2341-76e5-4db4-9a7d-15edd49d1765&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_r0633yc12__datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 1268A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
Current - On State (It (AV)) (Max): 633 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 60 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1268 A
Voltage - Off State: 1.2 kV
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R0633YC12D media?resourcetype=datasheets&amp;itemid=e6ab2341-76e5-4db4-9a7d-15edd49d1765&amp;filename=littelfuse_discrete_thyristors_fast_thyristors_r0633yc12__datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 1268A W58
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6900A @ 50Hz
Current - On State (It (AV)) (Max): 633 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 60 mA
Supplier Device Package: W58
Current - On State (It (RMS)) (Max): 1268 A
Voltage - Off State: 1.2 kV
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DPG30C200PC-TUB media?resourcetype=datasheets&itemid=2e521d97-445d-4ff4-8f79-d563c29b430e&filename=littelfuse%2520power%2520semiconductors%2520dpg30c200pc%2520datasheet.pdf
DPG30C200PC-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DPG30C200PC-TRL media?resourcetype=datasheets&itemid=2E521D97-445D-4FF4-8F79-D563C29B430E&filename=Littelfuse-Power-Semiconductors-DPG30C200PC-Datasheet
DPG30C200PC-TRL
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 15 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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DPG30P400PJ media?resourcetype=datasheets&itemid=6bdc259e-f343-48fc-9372-c3e59ef43fdc&filename=littelfuse%2520power%2520semiconductors%2520dpg30p400pj%2520datasheet.pdf
Виробник: IXYS
Description: DIODE GP 400V 30A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 46pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: ISOPLUS220™
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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IXTP4N70X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtp4n70x2m_datasheet.pdf.pdf
IXTP4N70X2M
Виробник: IXYS
Description: MOSFET N-CH 700V 4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 25 V
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DMA100A1600NB
Виробник: IXYS
Description: PWRDIODEDISC-RECTIFIER SOT-227UI
Packaging: Tube
на замовлення 340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
100+1274.97 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
DPF120C600HB media?resourcetype=datasheets&itemid=b67da6cc-1dac-4997-9a5b-e2f9b0a0af94&filename=littelfuse-power-semiconductor-discrete-diode-dpf120c600hb-datasheet
DPF120C600HB
Виробник: IXYS
Description: DIODE ARRAY GP 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 50 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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DSA20C60PB media?resourcetype=datasheets&itemid=780d1b58-b452-4ec5-ad9a-ad9bb2758da2&filename=power_semiconductor_discrete_diode_dsa20c60pb_datasheet.pdf
DSA20C60PB
Виробник: IXYS
Description: DIODE ARRAY SCHOT 60V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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MDMA60B800MB
Виробник: IXYS
Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
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MDMA60B1600MB
Виробник: IXYS
Description: BIPOLAR MODULE - OTHER ECO-PAC1
Packaging: Tube
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IXBOD2-32RD
Виробник: IXYS
Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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IXBOD2-36RD
Виробник: IXYS
Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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DSA10IM100UC-TUB
DSA10IM100UC-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DPG60IM300PC-TRL
DPG60IM300PC-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+228.05 грн
Мінімальне замовлення: 800
В кошику  од. на суму  грн.
DPG60IM300PC-TRL
DPG60IM300PC-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+418.17 грн
10+309.62 грн
100+261.32 грн
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IXYX25N250CV1 littelfuse_discrete_igbts_xpt_ixy_25n250cv1_datasheet.pdf.pdf
IXYX25N250CV1
Виробник: IXYS
Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2130.58 грн
30+1662.47 грн
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IXYX200N65B5 Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf
IXYX200N65B5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 470A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 77ns/470ns
Switching Energy: 600µJ (on), 3.4mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 790 nC
Current - Collector (Ic) (Max): 470 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.13 kA
Power - Max: 1.61 kW
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MPA95-06DA mpa95-06da?assetguid=8119a103-e612-4a25-ba8d-46aef97e7685
MPA95-06DA
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 50 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2692.83 грн
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IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
IXYA55N65B5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 122A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/200ns
Switching Energy: 550µJ (on), 600µJ (off)
Test Condition: 300V, 25A, 5Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 395 W
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DFE25I600HA media?resourcetype=datasheets&itemid=4c9232b9-b095-415e-89c9-861c06979a99&filename=littelfuse%2520power%2520semiconductors%2520dfe25i600ha%2520datasheet.pdf
Виробник: IXYS
Description: DIODE ARRAY GP 600V 25A TO-247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DMA50I1600HA media?resourcetype=datasheets&itemid=5e17cc20-6050-441a-beee-e25309925071&filename=Littelfuse-Power-Semiconductors-DMA50I1600HA-Datasheet
DMA50I1600HA
Виробник: IXYS
Description: DIODE STANDARD 1600V 50A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W5139TJ480 littelfusediscretediodesrectifiercapsuletypew5139t450datasheetpdf.pdf
Виробник: IXYS
Description: DIODE STANDARD 4800V 5139A W89
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 57 µs
Technology: Standard
Current - Average Rectified (Io): 5139A
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
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M0955LC250
Виробник: IXYS
Description: DIODE STANDARD 2500V 955A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 955A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
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IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
Виробник: IXYS
Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+745.25 грн
30+426.10 грн
120+362.13 грн
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IXD2012NTR ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b
IXD2012NTR
Виробник: IXYS
Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+28.30 грн
5000+26.56 грн
7500+26.22 грн
12500+24.25 грн
17500+24.04 грн
25000+23.84 грн
Мінімальне замовлення: 2500
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IXD2012NTR ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b
IXD2012NTR
Виробник: IXYS
Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.45 грн
10+41.62 грн
25+37.54 грн
100+30.94 грн
250+28.89 грн
500+27.66 грн
1000+26.21 грн
Мінімальне замовлення: 6
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VUO35-16NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 35A PWS-A
Packaging: Bulk
Package / Case: PWS-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W2624NC240
Виробник: IXYS
Description: DIODE STANDARD 2400V 2624A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2624A
Supplier Device Package: W5
Voltage - DC Reverse (Vr) (Max): 2400 V
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W2054NC420
Виробник: IXYS
Description: DIODE STANDARD 4200V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W1856NC460
Виробник: IXYS
Description: DIODE STANDARD 4600V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
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W1856NC480
Виробник: IXYS
Description: DIODE STANDARD 4800V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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SJ4008DS2TP SJxx08xSx_SJxx08xx_Series.PDF
SJ4008DS2TP
Виробник: IXYS
Description: 8 AMP HIGH TEMPERATURE SENSITIVE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 400 V
на замовлення 689 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+204.53 грн
10+127.02 грн
100+87.03 грн
Мінімальне замовлення: 2
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MCMA700P1600NCA
MCMA700P1600NCA
Виробник: IXYS
Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
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MCMA700PD1600CB
MCMA700PD1600CB
Виробник: IXYS
Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
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MCMA700P1800CA
Виробник: IXYS
Description: SCR MODULE 1.8KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.8 kV
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IXSA80N120L2-7TR ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b
Виробник: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+452.55 грн
Мінімальне замовлення: 800
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IXSA80N120L2-7TR ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b
Виробник: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+926.59 грн
10+620.76 грн
100+467.49 грн
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W108CED180
Виробник: IXYS
Description: DIODE STANDARD 1800V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 1800 V
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W108CED220
Виробник: IXYS
Description: DIODE STANDARD 2200V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 2200 V
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IXFP34N65X2W
Виробник: IXYS
Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
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IXFH34N65X2W ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b
Виробник: IXYS
Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+621.04 грн
30+349.47 грн
120+294.93 грн
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DPG60IM300PC-TUB
DPG60IM300PC-TUB
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 150V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IRFP460 DS_238_IRFP460.pdf
IRFP460
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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N3565HA160
Виробник: IXYS
Description: SCR 1.6KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.6 kV
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N3565HA180
Виробник: IXYS
Description: SCR 1.8KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.8 kV
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IXSA40N120L2-7TR ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0
IXSA40N120L2-7TR
Виробник: IXYS
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+255.68 грн
Мінімальне замовлення: 800
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IXSA40N120L2-7TR ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0
IXSA40N120L2-7TR
Виробник: IXYS
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 1597 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+590.40 грн
10+387.29 грн
100+301.36 грн
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DSA15IM45UC-TUB
DSA15IM45UC-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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DSA15IM45UC-TRL
DSA15IM45UC-TRL
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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IXFM1633
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM1766
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM35N30
Виробник: IXYS
Description: MOSFET N-CH 300V 35A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N85XHV
IXFT30N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IXFT6N100F
IXFT6N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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N0910LC200
Виробник: IXYS
Description: SCR 2KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10.1A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2 kV
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