| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IXFX220N15P | IXYS |
Description: MOSFET N-CH 220A PLUS247-3 Packaging: Bulk |
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| IXTA1970-TRL | IXYS |
Description: MOSFET N-CH TO263 Packaging: Tape & Reel (TR) |
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| W3477MC360 | IXYS |
 Description: DIODE GEN PURP 3.6KV 3470A W54Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 38 µs Technology: Standard Current - Average Rectified (Io): 3470A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 3600 V Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A Current - Reverse Leakage @ Vr: 100 mA @ 3600 V |
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| IXYH30N120C4H1 | IXYS |
Description: IGBT TRENCH 1200V 94A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 310 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 18ns/205ns Switching Energy: 4.8mJ (on), 1.5mJ (off) Test Condition: 960V, 25A, 5Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 94 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 166 A Power - Max: 500 W |
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| IXGT32N120A3-TRL | IXYS |
Description: IGBT PT 1200V 75A TO268HV Packaging: Tape & Reel (TR) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A Supplier Device Package: TO-268HV (IXGT) IGBT Type: PT Gate Charge: 89 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 230 A Power - Max: 300 W |
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IXFN32N120 | IXYS |
Description: MOSFET N-CH 1200V 32A SOT-227B Packaging: Box Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V |
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| IXTP36N30P-PDP | IXYS |
Description: MOSFET N-CH TO220AB Packaging: Bulk |
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| W0944WC120 | IXYS |
Description: DIODE GEN PURP 1.2KV 944A W1 Packaging: Box Package / Case: DO-200AB, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 944A Supplier Device Package: W1 Operating Temperature - Junction: -40°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A Current - Reverse Leakage @ Vr: 15 mA @ 1200 V |
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| W0944WC150 | IXYS |
Description: DIODE GEN PURP 1.5KV 944A W1 Packaging: Box Package / Case: DO-200AB, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 944A Supplier Device Package: W1 Operating Temperature - Junction: -40°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 1500 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A Current - Reverse Leakage @ Vr: 15 mA @ 1500 V |
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MDD72-14N1B | IXYS |
Description: DIODE MOD GP 1400V 113A TO240AA Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 113A Supplier Device Package: TO-240AA Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A Current - Reverse Leakage @ Vr: 15 mA @ 1400 V |
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| IXYH55N120B4H1 | IXYS |
Description: IGBT TRENCH 1200V 138A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 420 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 27ns/215ns Switching Energy: 3.4mJ (on), 2.75mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 138 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 310 A Power - Max: 650 W |
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| IXYH55N120C4H1 | IXYS |
Description: IGBT TRENCH 1200V 126A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 180 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A Supplier Device Package: TO-247 (IXTH) IGBT Type: Trench Td (on/off) @ 25°C: 20ns/180ns Switching Energy: 3.5mJ (on), 1.34mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 114 nC Current - Collector (Ic) (Max): 126 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 290 A Power - Max: 650 W |
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| MCMA110PD1800TB | IXYS |
Description: BIPOLAR MODULE - THYRISTOR TO-24 Packaging: Box Package / Case: TO-240AA Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 140°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 110 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (RMS)) (Max): 170 A Voltage - Off State: 1.8 kV |
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| M1022LC120 | IXYS |
Description: DIODE GEN PURP 1.2KV 1022A W4 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 1022A Supplier Device Package: W4 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A Current - Reverse Leakage @ Vr: 100 mA @ 1200 V |
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| M1022LC160 | IXYS |
Description: DIODE GEN PURP 1.6KV 1022A W4 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 1022A Supplier Device Package: W4 Operating Temperature - Junction: -40°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A Current - Reverse Leakage @ Vr: 100 mA @ 1600 V |
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| IXYK30N170CV1 | IXYS |
Description: DISC IGBT XPT-HI VOLTAGE TO-264( Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A Supplier Device Package: TO-264 (IXYK) IGBT Type: PT Td (on/off) @ 25°C: 16ns/143ns Switching Energy: 3.6mJ (on), 1.8mJ (off) Test Condition: 850V, 30A, 2.7Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Pulsed (Icm): 250 A Power - Max: 937 W |
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| W3708MC320 | IXYS |
Description: DIODE GEN PURP 3.2KV 3753A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 µs Technology: Standard Current - Average Rectified (Io): 3753A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 3200 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A Current - Reverse Leakage @ Vr: 100 mA @ 3200 V |
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| W3708MC350 | IXYS |
Description: DIODE GEN PURP 3.5KV 3753A W54 Packaging: Box Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 37 µs Technology: Standard Current - Average Rectified (Io): 3753A Supplier Device Package: W54 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 3500 V Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A Current - Reverse Leakage @ Vr: 100 mA @ 3500 V |
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| IXKT70N60C5 | IXYS |
Description: MOSFET P-CH 600V 68A TO-268 Packaging: Bulk |
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| IXTT75N15 | IXYS |
Description: MOSFET N-CH 150V 75A TO268 Packaging: Bulk |
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IRFP460 | IXYS |
Description: MOSFET N-CH 500V 20A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V Power Dissipation (Max): 260W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V |
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| SRU6008DS2RP | IXYS |
Description: 8 Amp High Temperature Sensitive Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 6 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A Current - On State (It (AV)) (Max): 5.1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: TO-252AA Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| SRU6008DS2RP | IXYS |
Description: 8 Amp High Temperature Sensitive Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount SCR Type: Sensitive Gate Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 6 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A Current - On State (It (AV)) (Max): 5.1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: TO-252AA Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 800 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IXTH12N70X2 | IXYS |
Description: MOSFET N-CH 700V 12A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V |
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| Q6008LH5TP | IXYS |
Description: 8 Amp Alternistor TRIAC-TO220 Is Packaging: Tube Package / Case: TO-220-3 Isolated Tab Mounting Type: Through Hole Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 100A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: ITO-220AB Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
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| IXFX170N10 | IXYS |
Description: MOSFET N-CH 170A PLUS247-3 Packaging: Bulk |
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| N4845EE360 | IXYS |
Description: SCR 3.6KV W108 Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz Current - On State (It (AV)) (Max): 4845 A Supplier Device Package: W108 Voltage - Off State: 3.6 kV |
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| IXFJ26N50 | IXYS |
Description: MOSFET N-CH 500V 14A TO247 Packaging: Bulk |
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| QV8025NH5TP | IXYS |
Description: TRIAC 800V 25A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| QV8025NH4TP | IXYS |
Description: TRIAC 800V 25A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| QV6025NH5TP | IXYS |
Description: TRIAC 600V 25A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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| QV6025NH5RP | IXYS |
Description: TRIAC 600V 25A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| QV6025NH5RP | IXYS |
Description: TRIAC 600V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 75 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-263 (D2Pak) Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 600 V |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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| IXFX44N50F | IXYS |
Description: MOSFET N-CH 44A PLUS247-3 Packaging: Bulk |
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IXFP8N85X | IXYS |
Description: MOSFET N-CH 850V 8A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220AB (IXFP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V |
на замовлення 1150 шт: термін постачання 21-31 дні (днів) |
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W6672TJ320 | IXYS |
Description: DIODE GEN PURP 1.75KV 6672A - Packaging: Box Package / Case: TO-200AF Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 52 µs Technology: Standard Current - Average Rectified (Io): 6672A Supplier Device Package: TO-200AF Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 1750 V Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A Current - Reverse Leakage @ Vr: 100 mA @ 1750 V |
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| DSA10IM100UC-TRL | IXYS |
Description: DIODE SCHOTTKY 100V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 68pF @ 24V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 100 V |
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| DMA10IM1600UZ-TRL | IXYS |
Description: DIODE GEN PURP 1.6KV 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 4pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DLA10IM800UC-TRL | IXYS |
Description: DIODE GEN PURP 800V 10A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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| DLA10IM800UC-TUB | IXYS |
Description: DIODE GEN PURP 800V 10A TO252AA Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 3pF @ 400V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-252AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
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| IXFN75N120SK | IXYS |
Description: SIC AND MULTICHIP DISCRETE Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 3.6V @ 18mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V |
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| N2900QL040 | IXYS |
Description: SCR 400V 5520A WP6 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 1 A Current - Gate Trigger (Igt) (Max): 300 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz Current - On State (It (AV)) (Max): 2900 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.47 V Current - Off State (Max): 100 mA Supplier Device Package: WP6 Current - On State (It (RMS)) (Max): 5520 A Voltage - Off State: 400 V |
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| IXYA60N65A5 | IXYS |
Description: 650V, 60A, XP Gen5 A5 IGBT in TO Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W |
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| IXYH60N65A5 | IXYS |
Description: 650V, 60A, XPT Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A Supplier Device Package: TO-247 (IXYH) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/230ns Switching Energy: 600µJ (on), 1.45mJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 128 nC Current - Collector (Ic) (Max): 134 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 260 A Power - Max: 395 W |
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| IXYH100N65C5 | IXYS |
Description: 650V, 100A, XPT Gen5 C5 IGBT in Packaging: Bulk |
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| IXYX180N65A5 | IXYS |
Description: 650V, 180A, XP Gen5 A5 IGBT in P Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/500ns Switching Energy: 420µJ (on), 4.1mJ (off) Test Condition: 300V, 100A, 2Ohm, 15V Gate Charge: 654 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.03 kA Power - Max: 1150 W |
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| IXYK180N65A5 | IXYS |
Description: 650V, 180A, XP Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Supplier Device Package: TO-264 (IXYK) Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 70ns/500ns Switching Energy: 420µJ (on), 4.1mJ (off) Test Condition: 300V, 100A, 2Ohm, 15V Gate Charge: 654 nC Current - Collector (Ic) (Max): 400 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.03 kA Power - Max: 1150 W |
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| IXYN180N65A5 | IXYS |
Description: 650V, 180A, XP Gen5 A5 IGBT in S Packaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A NTC Thermistor: No Supplier Device Package: SOT-227B Current - Collector (Ic) (Max): 340 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 940 W Current - Collector Cutoff (Max): 25 µA Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V |
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| IXYT120N65A5HV | IXYS |
Description: 650V, 120A, XP Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 75A Supplier Device Package: TO-268HV (IXYT) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 46ns/390ns Switching Energy: 2.46mJ (on), 3.55mJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 314 nC Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 790 A Power - Max: 830 W |
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| IXYX220N65A5 | IXYS |
Description: 650V, 220A, XPT Gen5 A5 IGBT in Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 64ns/540ns Switching Energy: 1.3mJ (on), 7.95mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 750 nC Current - Collector (Ic) (Max): 510 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.18 kA Power - Max: 1.61 kW |
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| N0795YN140 | IXYS |
Description: SCR 1.4KV 1580A W91 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz Current - On State (It (AV)) (Max): 795 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 2 V Current - Off State (Max): 30 mA Supplier Device Package: W91 Current - On State (It (RMS)) (Max): 1580 A Voltage - Off State: 1.4 kV |
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| N0795YN180 | IXYS |
Description: SCR 1.8KV 1580A W91 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -60°C ~ 125°C Current - Hold (Ih) (Max): 300 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz Current - On State (It (AV)) (Max): 795 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Voltage - On State (Vtm) (Max): 2 V Current - Off State (Max): 30 mA Supplier Device Package: W91 Current - On State (It (RMS)) (Max): 1580 A Voltage - Off State: 1.8 kV |
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| W1730JK240 | IXYS |
Description: DIODE GEN PURP 2.4KV 1730A W113 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1730A Supplier Device Package: W113 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 2400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A Current - Reverse Leakage @ Vr: 30 mA @ 2400 V |
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| W1730JK280 | IXYS |
Description: DIODE GEN PURP 2.8KV 1730A W113 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1730A Supplier Device Package: W113 Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 2800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A Current - Reverse Leakage @ Vr: 30 mA @ 2800 V |
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| W1748LC180 | IXYS |
Description: DIODE GEN PURP 1.8KV 1748A W4 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1748A Supplier Device Package: W4 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1800 V Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A Current - Reverse Leakage @ Vr: 30 mA @ 1800 V |
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| P0327WC12E | IXYS |
Description: SCR 1.2KV 670A W8 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 600 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz Current - On State (It (AV)) (Max): 330 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.17 V Current - Off State (Max): 30 mA Supplier Device Package: W8 Current - On State (It (RMS)) (Max): 670 A Voltage - Off State: 1.2 kV |
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| W1748LC220 | IXYS |
Description: DIODE GEN PURP 2.2KV 1748A W4 Packaging: Box Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1748A Supplier Device Package: W4 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2200 V Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A Current - Reverse Leakage @ Vr: 30 mA @ 2200 V |
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| P0327WC12D | IXYS |
Description: SCR 1.2KV 670A W8 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 600 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz Current - On State (It (AV)) (Max): 330 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 2.17 V Current - Off State (Max): 30 mA Supplier Device Package: W8 Current - On State (It (RMS)) (Max): 670 A Voltage - Off State: 1.2 kV |
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| P0366WC04C | IXYS |
Description: SCR 400V 756A W8 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 600 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz Current - On State (It (AV)) (Max): 366 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.88 V Current - Off State (Max): 30 mA Supplier Device Package: W8 Current - On State (It (RMS)) (Max): 756 A Voltage - Off State: 400 V |
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| P0366WC06C | IXYS |
Description: SCR 600V 756A W8 Packaging: Box Package / Case: TO-200AB, B-PuK Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 600 mA Current - Gate Trigger (Igt) (Max): 200 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz Current - On State (It (AV)) (Max): 370 A Voltage - Gate Trigger (Vgt) (Max): 3 V Voltage - On State (Vtm) (Max): 1.88 V Current - Off State (Max): 30 mA Supplier Device Package: W8 Current - On State (It (RMS)) (Max): 756 A Voltage - Off State: 600 V |
товар відсутній |
| IXTA1970-TRL |
товар відсутній
| W3477MC360 |
|
Виробник: IXYS
Description: DIODE GEN PURP 3.6KV 3470A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 µs
Technology: Standard
Current - Average Rectified (Io): 3470A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
Description: DIODE GEN PURP 3.6KV 3470A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 38 µs
Technology: Standard
Current - Average Rectified (Io): 3470A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3600 V
Voltage - Forward (Vf) (Max) @ If: 1.34 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3600 V
товар відсутній
| IXYH30N120C4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
Description: IGBT TRENCH 1200V 94A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 310 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
| IXGT32N120A3-TRL |
Виробник: IXYS
Description: IGBT PT 1200V 75A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268HV (IXGT)
IGBT Type: PT
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
Description: IGBT PT 1200V 75A TO268HV
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
Supplier Device Package: TO-268HV (IXGT)
IGBT Type: PT
Gate Charge: 89 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 300 W
товар відсутній
| IXFN32N120 |
|
Виробник: IXYS
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Description: MOSFET N-CH 1200V 32A SOT-227B
Packaging: Box
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
товар відсутній
| W0944WC120 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1200 V
товар відсутній
| W0944WC150 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.5KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
Description: DIODE GEN PURP 1.5KV 944A W1
Packaging: Box
Package / Case: DO-200AB, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 944A
Supplier Device Package: W1
Operating Temperature - Junction: -40°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 1500 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 1930 A
Current - Reverse Leakage @ Vr: 15 mA @ 1500 V
товар відсутній
| MDD72-14N1B |
|
Виробник: IXYS
Description: DIODE MOD GP 1400V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1400 V
Description: DIODE MOD GP 1400V 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1400 V
товар відсутній
| IXYH55N120B4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
Description: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
товар відсутній
| IXYH55N120C4H1 |
|
Виробник: IXYS
Description: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
Description: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
товар відсутній
| MCMA110PD1800TB |
|
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-24
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.8 kV
Description: BIPOLAR MODULE - THYRISTOR TO-24
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1900A, 2050A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 110 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 170 A
Voltage - Off State: 1.8 kV
товар відсутній
| M1022LC120 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
Description: DIODE GEN PURP 1.2KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1200 V
товар відсутній
| M1022LC160 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 1022A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 1022A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 2050 A
Current - Reverse Leakage @ Vr: 100 mA @ 1600 V
товар відсутній
| IXYK30N170CV1 |
|
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
Description: DISC IGBT XPT-HI VOLTAGE TO-264(
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 30A
Supplier Device Package: TO-264 (IXYK)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/143ns
Switching Energy: 3.6mJ (on), 1.8mJ (off)
Test Condition: 850V, 30A, 2.7Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 937 W
товар відсутній
| W3708MC320 |
|
Виробник: IXYS
Description: DIODE GEN PURP 3.2KV 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3200 V
Description: DIODE GEN PURP 3.2KV 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3200 V
товар відсутній
| W3708MC350 |
|
Виробник: IXYS
Description: DIODE GEN PURP 3.5KV 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3500 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3500 V
Description: DIODE GEN PURP 3.5KV 3753A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37 µs
Technology: Standard
Current - Average Rectified (Io): 3753A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3500 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3500 V
товар відсутній
| IRFP460 |
|
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
товар відсутній
| SRU6008DS2RP |
Виробник: IXYS
Description: 8 Amp High Temperature Sensitive
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: 8 Amp High Temperature Sensitive
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 72.11 грн |
| SRU6008DS2RP |
Виробник: IXYS
Description: 8 Amp High Temperature Sensitive
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
Description: 8 Amp High Temperature Sensitive
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.5 грн |
| 10+ | 127.92 грн |
| 100+ | 101.81 грн |
| 500+ | 80.85 грн |
| 1000+ | 68.6 грн |
| IXTH12N70X2 |
|
Виробник: IXYS
Description: MOSFET N-CH 700V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
Description: MOSFET N-CH 700V 12A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 25 V
товар відсутній
| Q6008LH5TP |
Виробник: IXYS
Description: 8 Amp Alternistor TRIAC-TO220 Is
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 100A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: 8 Amp Alternistor TRIAC-TO220 Is
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 100A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
товар відсутній
| N4845EE360 |
|
Виробник: IXYS
Description: SCR 3.6KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.6 kV
Description: SCR 3.6KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 65000A @ 50Hz
Current - On State (It (AV)) (Max): 4845 A
Supplier Device Package: W108
Voltage - Off State: 3.6 kV
товар відсутній
| QV8025NH5TP |
|
Виробник: IXYS
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 433.94 грн |
| 10+ | 358.24 грн |
| 100+ | 298.55 грн |
| 500+ | 247.21 грн |
| 1000+ | 222.49 грн |
| QV8025NH4TP |
|
Виробник: IXYS
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
Description: TRIAC 800V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 434.72 грн |
| 10+ | 358.61 грн |
| 100+ | 298.85 грн |
| 500+ | 247.46 грн |
| 1000+ | 222.71 грн |
| QV6025NH5TP |
|
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC 600V 25A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 480.07 грн |
| 50+ | 366.29 грн |
| 100+ | 313.97 грн |
| 500+ | 261.91 грн |
| 1000+ | 224.26 грн |
| QV6025NH5RP |
|
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC 600V 25A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 289.82 грн |
| QV6025NH5RP |
|
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
Description: TRIAC 600V 25A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 75 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 480.07 грн |
| 10+ | 388.13 грн |
| 100+ | 313.97 грн |
| IXFP8N85X |
|
Виробник: IXYS
Description: MOSFET N-CH 850V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
Description: MOSFET N-CH 850V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
на замовлення 1150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.22 грн |
| 50+ | 177.4 грн |
| 100+ | 152.06 грн |
| 500+ | 126.85 грн |
| 1000+ | 108.61 грн |
| W6672TJ320 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.75KV 6672A -
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52 µs
Technology: Standard
Current - Average Rectified (Io): 6672A
Supplier Device Package: TO-200AF
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1750 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
Description: DIODE GEN PURP 1.75KV 6672A -
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 52 µs
Technology: Standard
Current - Average Rectified (Io): 6672A
Supplier Device Package: TO-200AF
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 1750 V
Voltage - Forward (Vf) (Max) @ If: 1.37 V @ 5000 A
Current - Reverse Leakage @ Vr: 100 mA @ 1750 V
товар відсутній
| DSA10IM100UC-TRL |
|
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
товар відсутній
| DMA10IM1600UZ-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 49.23 грн |
| DLA10IM800UC-TRL |
|
Виробник: IXYS
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товар відсутній
| DLA10IM800UC-TUB |
|
Виробник: IXYS
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE GEN PURP 800V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 3pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.22 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товар відсутній
| IXFN75N120SK |
|
Виробник: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 50A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 18mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4820 pF @ 1000 V
товар відсутній
| N2900QL040 |
|
Виробник: IXYS
Description: SCR 400V 5520A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 2900 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 400 V
Description: SCR 400V 5520A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 2900 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.47 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 400 V
товар відсутній
| IXYA60N65A5 |
|
Виробник: IXYS
Description: 650V, 60A, XP Gen5 A5 IGBT in TO
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
Description: 650V, 60A, XP Gen5 A5 IGBT in TO
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
товар відсутній
| IXYH60N65A5 |
|
Виробник: IXYS
Description: 650V, 60A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
Description: 650V, 60A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 36A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/230ns
Switching Energy: 600µJ (on), 1.45mJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 128 nC
Current - Collector (Ic) (Max): 134 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 260 A
Power - Max: 395 W
товар відсутній
| IXYH100N65C5 |
товар відсутній
| IXYX180N65A5 |
|
Виробник: IXYS
Description: 650V, 180A, XP Gen5 A5 IGBT in P
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
Description: 650V, 180A, XP Gen5 A5 IGBT in P
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
товар відсутній
| IXYK180N65A5 |
|
Виробник: IXYS
Description: 650V, 180A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXYK)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
Description: 650V, 180A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Supplier Device Package: TO-264 (IXYK)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/500ns
Switching Energy: 420µJ (on), 4.1mJ (off)
Test Condition: 300V, 100A, 2Ohm, 15V
Gate Charge: 654 nC
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.03 kA
Power - Max: 1150 W
товар відсутній
| IXYN180N65A5 |
|
Виробник: IXYS
Description: 650V, 180A, XP Gen5 A5 IGBT in S
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V
Description: 650V, 180A, XP Gen5 A5 IGBT in S
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 8640 pF @ 25 V
товар відсутній
| IXYT120N65A5HV |
|
Виробник: IXYS
Description: 650V, 120A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 75A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/390ns
Switching Energy: 2.46mJ (on), 3.55mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
Description: 650V, 120A, XP Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 75A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 46ns/390ns
Switching Energy: 2.46mJ (on), 3.55mJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 314 nC
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 790 A
Power - Max: 830 W
товар відсутній
| IXYX220N65A5 |
|
Виробник: IXYS
Description: 650V, 220A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/540ns
Switching Energy: 1.3mJ (on), 7.95mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.18 kA
Power - Max: 1.61 kW
Description: 650V, 220A, XPT Gen5 A5 IGBT in
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 64ns/540ns
Switching Energy: 1.3mJ (on), 7.95mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 750 nC
Current - Collector (Ic) (Max): 510 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.18 kA
Power - Max: 1.61 kW
товар відсутній
| N0795YN140 |
Виробник: IXYS
Description: SCR 1.4KV 1580A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - On State (It (AV)) (Max): 795 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 30 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1580 A
Voltage - Off State: 1.4 kV
Description: SCR 1.4KV 1580A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - On State (It (AV)) (Max): 795 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 30 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1580 A
Voltage - Off State: 1.4 kV
товар відсутній
| N0795YN180 |
Виробник: IXYS
Description: SCR 1.8KV 1580A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - On State (It (AV)) (Max): 795 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 30 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1580 A
Voltage - Off State: 1.8 kV
Description: SCR 1.8KV 1580A W91
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -60°C ~ 125°C
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10500A @ 50Hz
Current - On State (It (AV)) (Max): 795 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 30 mA
Supplier Device Package: W91
Current - On State (It (RMS)) (Max): 1580 A
Voltage - Off State: 1.8 kV
товар відсутній
| W1730JK240 |
Виробник: IXYS
Description: DIODE GEN PURP 2.4KV 1730A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1730A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 2400 V
Description: DIODE GEN PURP 2.4KV 1730A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1730A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 2400 V
товар відсутній
| W1730JK280 |
Виробник: IXYS
Description: DIODE GEN PURP 2.8KV 1730A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1730A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 2800 V
Description: DIODE GEN PURP 2.8KV 1730A W113
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1730A
Supplier Device Package: W113
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1000 A
Current - Reverse Leakage @ Vr: 30 mA @ 2800 V
товар відсутній
| W1748LC180 |
|
Виробник: IXYS
Description: DIODE GEN PURP 1.8KV 1748A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1748A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Description: DIODE GEN PURP 1.8KV 1748A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1748A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
товар відсутній
| P0327WC12E |
|
Виробник: IXYS
Description: SCR 1.2KV 670A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.17 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 670 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 670A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.17 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 670 A
Voltage - Off State: 1.2 kV
товар відсутній
| W1748LC220 |
|
Виробник: IXYS
Description: DIODE GEN PURP 2.2KV 1748A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1748A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Description: DIODE GEN PURP 2.2KV 1748A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1748A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.93 V @ 3770 A
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
товар відсутній
| P0327WC12D |
|
Виробник: IXYS
Description: SCR 1.2KV 670A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.17 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 670 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 670A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 3575A @ 50Hz
Current - On State (It (AV)) (Max): 330 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.17 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 670 A
Voltage - Off State: 1.2 kV
товар відсутній
| P0366WC04C |
|
Виробник: IXYS
Description: SCR 400V 756A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz
Current - On State (It (AV)) (Max): 366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.88 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 756 A
Voltage - Off State: 400 V
Description: SCR 400V 756A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz
Current - On State (It (AV)) (Max): 366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.88 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 756 A
Voltage - Off State: 400 V
товар відсутній
| P0366WC06C |
|
Виробник: IXYS
Description: SCR 600V 756A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz
Current - On State (It (AV)) (Max): 370 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.88 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 756 A
Voltage - Off State: 600 V
Description: SCR 600V 756A W8
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 600 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5170A @ 50Hz
Current - On State (It (AV)) (Max): 370 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.88 V
Current - Off State (Max): 30 mA
Supplier Device Package: W8
Current - On State (It (RMS)) (Max): 756 A
Voltage - Off State: 600 V
товар відсутній