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IXTA230N04T4 IXTA230N04T4 IXYS media?resourcetype=datasheets&itemid=42B11C11-25D3-4407-BAE8-48526E3A70F0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-230N04T4-Datasheet.PDF Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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MDD56-14N1B MDD56-14N1B IXYS media?resourcetype=datasheets&itemid=EFA63FC9-9031-452B-972F-39004ADFE8BA&filename=Littelfuse-Power-Semiconductors-MDD56-14N1B-Datasheet Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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MDD56-08N1B MDD56-08N1B IXYS MDD56-08N1B.pdf Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2171.67 грн
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IXTA140N12T2 IXTA140N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
50+411.44 грн
Мінімальне замовлення: 50
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IXYT12N250CV1HV IXYT12N250CV1HV IXYS media?resourcetype=datasheets&itemid=13066e92-8f65-4aac-919d-ea0e27499314&filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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IXYA12N250CHV IXYA12N250CHV IXYS media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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W2865HA680 W2865HA680 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
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W2865HA720 W2865HA720 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
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IXFA6N120P-TRL IXFA6N120P-TRL IXYS littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9 Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
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QV6012NH4RP QV6012NH4RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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QV6012NH4RP QV6012NH4RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
2+317.45 грн
10+201.79 грн
100+142.50 грн
Мінімальне замовлення: 2
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QV6012NH5RP QV6012NH5RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+122.59 грн
Мінімальне замовлення: 500
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QV6012NH5RP QV6012NH5RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+320.02 грн
10+203.19 грн
100+143.52 грн
Мінімальне замовлення: 2
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QV6012RH5TP QV6012RH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+296.06 грн
10+187.37 грн
100+131.71 грн
500+101.32 грн
1000+94.16 грн
Мінімальне замовлення: 2
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IXTA10P15T-TRL IXTA10P15T-TRL IXYS Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IXTA10P15T IXTA10P15T IXYS media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS Littelfuse-Power-Semiconductors-CLA15E1200NPZ-Datasheet?assetguid=989b3d28-a1d7-4109-be27-e3f1e89efd28 Description: SCR 1.2KV 33A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA15E1200NPZ-TRL CLA15E1200NPZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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IXKH47N60CC3 IXYS Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
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IXFH60N20F IXYS Description: MOSFET N-CH 60A TO247
Packaging: Bulk
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IXFT60N20F IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFT60N20 IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFP12N65X2A IXYS Description: MOSFET N-CH TO220
Packaging: Bulk
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MKE38RK600DFEL-TUB MKE38RK600DFEL-TUB IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFT21N50 IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXFT21N50F IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXTU4N60P IXYS Description: MOSFET N-CH TO251
Packaging: Bulk
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IXKK85N60CC3 IXYS Description: MOSFET N-CH 600V 85A TO264A
Packaging: Bulk
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N2825TJ450 IXYS Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
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W1185LC450 IXYS media?resourcetype=datasheets&itemid=d35ad060-a54c-448f-adfa-b6bd68e14583&filename=littelfuse_discrete_diodes_rectifier_w1185lc4_0_datasheet.pdf Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
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IXFK40N50Q2 IXYS Description: MOSFET N-CH 40A TO264
Packaging: Bulk
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IXFM12N90Q IXYS Description: MOSFET N-CH 900V 12A TO-204AA
Packaging: Bulk
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IXTY26P10T-TRL IXYS Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IX526119 IXYS Description: ITF40PF1200DHGTLB-TRR
Packaging: Tape & Reel (TR)
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
200+1564.10 грн
Мінімальне замовлення: 200
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IX526112 IXYS Description: ITF40PF1200DHGTLB-TUB
Packaging: Tube
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DPG30IM300PC-TUB DPG30IM300PC-TUB IXYS media?resourcetype=datasheets&itemid=49f8e8f3-467a-4c4a-a17d-dd5385ecdfe2&filename=littelfuse%2520power%2520semiconductors%2520dpg30im300pc%2520datasheet.pdf Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG30IM400PC-TUB DPG30IM400PC-TUB IXYS media?resourcetype=datasheets&itemid=e133fcc9-90ac-46b5-8196-aa346cb77ae8&filename=littelfuse%2520power%2520semiconductors%2520dpg30im400pc%2520datasheet.pdf Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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DPG30IM300PC-TRL DPG30IM300PC-TRL IXYS media?resourcetype=datasheets&itemid=49F8E8F3-467A-4C4A-A17D-DD5385ECDFE2&filename=Littelfuse-Power-Semiconductors-DPG30IM300PC-Datasheet Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG30IM400PC-TRL DPG30IM400PC-TRL IXYS media?resourcetype=datasheets&itemid=e133fcc9-90ac-46b5-8196-aa346cb77ae8&filename=littelfuse%2520power%2520semiconductors%2520dpg30im400pc%2520datasheet.pdf Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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DPG30I600PM DPG30I600PM IXYS media?resourcetype=datasheets&itemid=03578d53-5ccb-4487-adf5-d9d77871fcd5&filename=littelfuse%2520power%2520semiconductors%2520dpg30i600pm%2520datasheet.pdf Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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IXTP03N90P IXYS Description: MOSFET N-CH TO220AB
Packaging: Bulk
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IXTY03N90PHV IXYS Description: MOSFET N-CH TO252AA
Packaging: Bulk
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IXFH28N50F IXYS Description: MOSFET N-CH 28A TO247
Packaging: Bulk
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IXFT28N50F IXYS Description: MOSFET N-CH 28A TO268
Packaging: Bulk
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IXFT40N30 IXYS Description: MOSFET N-CH 40A TO268
Packaging: Bulk
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IXTA36N30P-PDP IXYS Description: MOSFET N-CH TO263
Packaging: Bulk
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IXFN55N120SK IXFN55N120SK IXYS ixfn55n120sk-datasheet?assetguid=17f1b6bd-0e80-47d7-b655-3862c1de6cf4 Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
1+3956.58 грн
10+3542.33 грн
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IXTA340N04T4-TRL IXYS Description: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
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IXTS01N90P-89 IXYS Description: MOSFET N-CH SMD
Packaging: Bulk
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IXTS01N90P-223 IXYS Description: MOSFET N-CH SMD
Packaging: Bulk
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DMA10P1600PZ-TUB DMA10P1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA10P1600PZ.pdf Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA10P1600PZ-TRL DMA10P1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA10P1600PZ.pdf Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA10IM1600PZ-TUB DMA10IM1600PZ-TUB IXYS media?resourcetype=datasheets&itemid=c11be442-2c98-4491-8b7d-00210fdf87b9&filename=Littelfuse-Power-Semiconductors-DMA10IM1600PZ-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA30IM1600PZ-TUB DMA30IM1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30IM1600PZ.pdf Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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DMA10IM1600PZ-TRL DMA10IM1600PZ-TRL IXYS media?resourcetype=datasheets&itemid=c11be442-2c98-4491-8b7d-00210fdf87b9&filename=Littelfuse-Power-Semiconductors-DMA10IM1600PZ-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA30IM1600PZ-TRL DMA30IM1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30IM1600PZ.pdf Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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CMA50E1600TZ-TRL IXYS CMA50E1600TZ.pdf Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
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CMA50E1600TZ-TUB IXYS CMA50E1600TZ.pdf Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
30+445.40 грн
Мінімальне замовлення: 30
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IXFK1801 IXYS Description: MOSFET N-CH 18A TO264
Packaging: Bulk
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MITA300RF1700P-PC IXYS MITA300RF1700PTED.pdf Description: IGBT MOD MITA300RF1700PTED-PC
Packaging: Box
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IXTA230N04T4 media?resourcetype=datasheets&itemid=42B11C11-25D3-4407-BAE8-48526E3A70F0&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-230N04T4-Datasheet.PDF
IXTA230N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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MDD56-14N1B media?resourcetype=datasheets&itemid=EFA63FC9-9031-452B-972F-39004ADFE8BA&filename=Littelfuse-Power-Semiconductors-MDD56-14N1B-Datasheet
MDD56-14N1B
Виробник: IXYS
Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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MDD56-08N1B MDD56-08N1B.pdf
MDD56-08N1B
Виробник: IXYS
Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2171.67 грн
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IXTA140N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf
IXTA140N12T2
Виробник: IXYS
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+411.44 грн
Мінімальне замовлення: 50
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IXYT12N250CV1HV media?resourcetype=datasheets&itemid=13066e92-8f65-4aac-919d-ea0e27499314&filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf
IXYT12N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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IXYA12N250CHV media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf
IXYA12N250CHV
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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W2865HA680 W2865HA680-720_Type_DS.pdf
W2865HA680
Виробник: IXYS
Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
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W2865HA720 W2865HA680-720_Type_DS.pdf
W2865HA720
Виробник: IXYS
Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
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IXFA6N120P-TRL littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9
IXFA6N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
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QV6012NH4RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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QV6012NH4RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 470 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+317.45 грн
10+201.79 грн
100+142.50 грн
Мінімальне замовлення: 2
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QV6012NH5RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+122.59 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
QV6012NH5RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+320.02 грн
10+203.19 грн
100+143.52 грн
Мінімальне замовлення: 2
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QV6012RH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012RH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.06 грн
10+187.37 грн
100+131.71 грн
500+101.32 грн
1000+94.16 грн
Мінімальне замовлення: 2
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IXTA10P15T-TRL
IXTA10P15T-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IXTA10P15T media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf
IXTA10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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CLA15E1200NPZ-TUB Littelfuse-Power-Semiconductors-CLA15E1200NPZ-Datasheet?assetguid=989b3d28-a1d7-4109-be27-e3f1e89efd28
CLA15E1200NPZ-TUB
Виробник: IXYS
Description: SCR 1.2KV 33A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA15E1200NPZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf
CLA15E1200NPZ-TRL
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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IXKH47N60CC3
Виробник: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
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IXFH60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO247
Packaging: Bulk
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IXFT60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFT60N20
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFP12N65X2A
Виробник: IXYS
Description: MOSFET N-CH TO220
Packaging: Bulk
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MKE38RK600DFEL-TUB littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TUB
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFT21N50
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXFT21N50F
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXTU4N60P
Виробник: IXYS
Description: MOSFET N-CH TO251
Packaging: Bulk
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IXKK85N60CC3
Виробник: IXYS
Description: MOSFET N-CH 600V 85A TO264A
Packaging: Bulk
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N2825TJ450
Виробник: IXYS
Description: SCR 4.5KV 5520A W81
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 41000A @ 50Hz
Current - On State (It (AV)) (Max): 2825 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3.37 V
Current - Off State (Max): 250 mA
Supplier Device Package: W81
Current - On State (It (RMS)) (Max): 5520 A
Voltage - Off State: 4.5 kV
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W1185LC450 media?resourcetype=datasheets&itemid=d35ad060-a54c-448f-adfa-b6bd68e14583&filename=littelfuse_discrete_diodes_rectifier_w1185lc4_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 1185A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1185A
Supplier Device Package: W4
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 2420 A
Current - Reverse Leakage @ Vr: 30 mA @ 4500 V
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IXFK40N50Q2
Виробник: IXYS
Description: MOSFET N-CH 40A TO264
Packaging: Bulk
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IXFM12N90Q
Виробник: IXYS
Description: MOSFET N-CH 900V 12A TO-204AA
Packaging: Bulk
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IXTY26P10T-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 26A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 13A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
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IX526119
Виробник: IXYS
Description: ITF40PF1200DHGTLB-TRR
Packaging: Tape & Reel (TR)
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
200+1564.10 грн
Мінімальне замовлення: 200
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IX526112
Виробник: IXYS
Description: ITF40PF1200DHGTLB-TUB
Packaging: Tube
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DPG30IM300PC-TUB media?resourcetype=datasheets&itemid=49f8e8f3-467a-4c4a-a17d-dd5385ecdfe2&filename=littelfuse%2520power%2520semiconductors%2520dpg30im300pc%2520datasheet.pdf
DPG30IM300PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG30IM400PC-TUB media?resourcetype=datasheets&itemid=e133fcc9-90ac-46b5-8196-aa346cb77ae8&filename=littelfuse%2520power%2520semiconductors%2520dpg30im400pc%2520datasheet.pdf
DPG30IM400PC-TUB
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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DPG30IM300PC-TRL media?resourcetype=datasheets&itemid=49F8E8F3-467A-4C4A-A17D-DD5385ECDFE2&filename=Littelfuse-Power-Semiconductors-DPG30IM300PC-Datasheet
DPG30IM300PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 300V 30A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 42pF @ 150V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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DPG30IM400PC-TRL media?resourcetype=datasheets&itemid=e133fcc9-90ac-46b5-8196-aa346cb77ae8&filename=littelfuse%2520power%2520semiconductors%2520dpg30im400pc%2520datasheet.pdf
DPG30IM400PC-TRL
Виробник: IXYS
Description: DIODE GEN PURP 400V 30A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Capacitance @ Vr, F: 32pF @ 200V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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DPG30I600PM media?resourcetype=datasheets&itemid=03578d53-5ccb-4487-adf5-d9d77871fcd5&filename=littelfuse%2520power%2520semiconductors%2520dpg30i600pm%2520datasheet.pdf
DPG30I600PM
Виробник: IXYS
Description: DIODE GP 600V 15A TO220ACFP
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 26pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220ACFP
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.52 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
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IXTP03N90P
Виробник: IXYS
Description: MOSFET N-CH TO220AB
Packaging: Bulk
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IXTY03N90PHV
Виробник: IXYS
Description: MOSFET N-CH TO252AA
Packaging: Bulk
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IXFH28N50F
Виробник: IXYS
Description: MOSFET N-CH 28A TO247
Packaging: Bulk
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IXFT28N50F
Виробник: IXYS
Description: MOSFET N-CH 28A TO268
Packaging: Bulk
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IXFT40N30
Виробник: IXYS
Description: MOSFET N-CH 40A TO268
Packaging: Bulk
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IXTA36N30P-PDP
Виробник: IXYS
Description: MOSFET N-CH TO263
Packaging: Bulk
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IXFN55N120SK ixfn55n120sk-datasheet?assetguid=17f1b6bd-0e80-47d7-b655-3862c1de6cf4
IXFN55N120SK
Виробник: IXYS
Description: SIC AND MULTICHIP DISCRETE
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 40A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 12mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +15V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 1000 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3956.58 грн
10+3542.33 грн
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IXTA340N04T4-TRL
Виробник: IXYS
Description: MOSFET N-CH TO263
Packaging: Tape & Reel (TR)
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IXTS01N90P-89
Виробник: IXYS
Description: MOSFET N-CH SMD
Packaging: Bulk
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IXTS01N90P-223
Виробник: IXYS
Description: MOSFET N-CH SMD
Packaging: Bulk
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DMA10P1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA10P1600PZ.pdf
DMA10P1600PZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA10P1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA10P1600PZ.pdf
DMA10P1600PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA10IM1600PZ-TUB media?resourcetype=datasheets&itemid=c11be442-2c98-4491-8b7d-00210fdf87b9&filename=Littelfuse-Power-Semiconductors-DMA10IM1600PZ-Datasheet
DMA10IM1600PZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA30IM1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30IM1600PZ.pdf
DMA30IM1600PZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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DMA10IM1600PZ-TRL media?resourcetype=datasheets&itemid=c11be442-2c98-4491-8b7d-00210fdf87b9&filename=Littelfuse-Power-Semiconductors-DMA10IM1600PZ-Datasheet
DMA10IM1600PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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DMA30IM1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDMA30IM1600PZ.pdf
DMA30IM1600PZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 30A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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CMA50E1600TZ-TRL CMA50E1600TZ.pdf
Виробник: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
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CMA50E1600TZ-TUB CMA50E1600TZ.pdf
Виробник: IXYS
Description: SCR 1.6KV 79A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 595A
Current - On State (It (AV)) (Max): 50 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.3 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Current - On State (It (RMS)) (Max): 79 A
Voltage - Off State: 1.6 kV
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+445.40 грн
Мінімальне замовлення: 30
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IXFK1801
Виробник: IXYS
Description: MOSFET N-CH 18A TO264
Packaging: Bulk
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MITA300RF1700P-PC MITA300RF1700PTED.pdf
Виробник: IXYS
Description: IGBT MOD MITA300RF1700PTED-PC
Packaging: Box
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