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QJ6025RH4TP QJ6025RH4TP IXYS Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+486.57 грн
10+420.55 грн
100+344.56 грн
500+275.27 грн
1000+234.66 грн
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QJ6025NH4TP QJ6025NH4TP IXYS media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+319.63 грн
50+245.67 грн
100+227.64 грн
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IXFT78N60X3HV IXFT78N60X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf Description: MOSFET ULTRA 600V 78A TO268HV
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R0964LC12E IXYS Description: SCR 1.2KV 1971A W10
Voltage - On State (Vtm) (Max): 1.96 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 964 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 1971 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W10
Current - Off State (Max): 70 mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+27782.47 грн
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MDC600-22IO1W IXYS Description: MOD BIPOLAR DIODE 2200V
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N6012ZD040 IXYS media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf Description: SCR 400V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 400 V
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IXTP28N15P IXYS Description: MOSFET N-CH TO-220
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N3165HA260 IXYS Description: SCR 2.6KV 6230A W79
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
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N3165HA280 IXYS Description: SCR 2.8KV 6230A W79
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Voltage - Off State: 2.8 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
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MDMA110P1600TG MDMA110P1600TG IXYS media?resourcetype=datasheets&itemid=a1f04155-5cf0-4999-955c-addf7cb69dc5&filename=Littelfuse-Power-Semiconductors-MDMA110P1600TG-Datasheet Description: DIODE MOD GP 1600V 110A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
1+1949.43 грн
36+1777.51 грн
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N2830HE260 IXYS Description: SCR 2.6KV 5585A W80
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 5585 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 2830 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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DFE240X600NA DFE240X600NA IXYS media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf Description: DIODE MOD GP 600V 120A SOT227B
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
1+2532.51 грн
10+1865.72 грн
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IXTD3N50P-2J IXYS Description: MOSFET N-CH 500V 3A DIE
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IXTM67N10 IXYS Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFM67N10 IXYS Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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STP802U2SRP STP802U2SRP IXYS littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+86.89 грн
Мінімальне замовлення: 2500
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STP802U2SRP STP802U2SRP IXYS littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272 Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
2+272.95 грн
10+172.26 грн
100+120.61 грн
500+92.49 грн
1000+85.84 грн
Мінімальне замовлення: 2
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MCC162-18IO1B MCC162-18IO1B IXYS Description: SCR MODULE 1.8KV 300A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MTC120WX75GD-SMD IXYS Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM IXYS GWM160-0055X1.pdf Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W IXYS Description: MOD SCR HI POWER 1200V
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IXTK3N250L IXYS media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFM15N60 IXYS IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFT52N30Q TRL IXYS IXF(H,K,T)52N30Q.pdf Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
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IXFX52N30Q IXYS Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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MDD26-18N1B MDD26-18N1B IXYS MDD26-18N1B.pdf Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B IXYS MDD56-18N1B.pdf Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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IXGH56N60B3 IXYS Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420 IXYS Description: SCR 4.2KV W77
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MDA72-16N1B MDA72-16N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+3128.26 грн
10+2777.97 грн
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IXFP30N25X3M IXFP30N25X3M IXYS littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFJ80N25X3 IXFJ80N25X3 IXYS PCIM_Highlights_2017.pdf Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+984.21 грн
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MCB20P1200LB-TRR IXYS Description: MCB20P1200LB-TRR
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MCB30P1200LB-TRR IXYS media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf Description: MOSFET 2N-CH 1200V 9SMPD
Supplier Device Package: 9-SMPD-B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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CLE90UH1200TLB-TRR IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf Description: BIPOLAR MODULE - THYRISTOR SMPD
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MCB60P1200TLB-TRR IXYS Description: MCB60P1200TLB-TRR
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MCB40P1200LB-TRR IXYS Description: MCB40P1200LB-TRR
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DHG60U1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DHG40B1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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MKH17RP650DCGL-TRR IXYS Description: MKH17RP650DCGLB-TRR
Part Status: Active
Packaging: Tape & Reel (TR)
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N3175HE160 IXYS Description: SCR 1.6KV 6310A W80
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N3175HE180 IXYS media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf Description: SCR 1.8KV 6310A W80
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 6310 A
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3175 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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IXA20RG1200DHG-TUB IXA20RG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHG-TRR IXA20RG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20I1200PZ-TUB IXA20I1200PZ-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 165 W
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IXA20I1200PZ-TRL IXA20I1200PZ-TRL IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Power - Max: 165 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IXYP24N100A4 IXYP24N100A4 IXYS littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062 Description: IGBT PT 1000V 85A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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IXFP8N65X2M IXFP8N65X2M IXYS Description: MOSFET N-CH 650V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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QJ8035LH4TP QJ8035LH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
1+536.41 грн
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QJ8035RH4TP QJ8035RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
1+471.53 грн
10+305.66 грн
100+221.69 грн
500+174.49 грн
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QJ8035NH4TP QJ8035NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 648 шт:
термін постачання 21-31 дні (днів)
1+526.12 грн
10+343.07 грн
100+250.55 грн
500+198.16 грн
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IXFK170N25X3 IXFK170N25X3 IXYS littelfuse-discrete-mosfets-ixf-170n25x3-datasheet?assetguid=27111ec5-cb82-481f-918b-bee4de39fe3a Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1542.77 грн
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VBE60-12A VBE60-12A IXYS VBE6012A.pdf Description: BRIDGE RECT 1P 1.2KV 60A SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
1+2279.34 грн
10+1621.24 грн
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MDNA660U2200PT-PC IXYS Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
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N1725MC360 IXYS Description: SCR 3.6KV 3360A W70
Mounting Type: Chassis Mount
Package / Case: TO-200AC, K-PUK
Packaging: Box
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 3360 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W70
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1725 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
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IXTA140P05T-TRL IXTA140P05T-TRL IXYS Description: IXTA140P05T
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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QJ8030RH4TP QJ8030RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 679 шт:
термін постачання 21-31 дні (днів)
1+439.10 грн
10+283.49 грн
100+204.74 грн
500+160.64 грн
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+219.28 грн
Мінімальне замовлення: 500
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+526.12 грн
10+343.07 грн
100+250.55 грн
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QJ8030NH4TP QJ8030NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
1+509.51 грн
10+332.09 грн
100+242.09 грн
500+191.21 грн
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QJ6025RH4TP
QJ6025RH4TP
Виробник: IXYS
Description: 600V HIGH TEMPERATURE TRIAC IN T
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-220
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+486.57 грн
10+420.55 грн
100+344.56 грн
500+275.27 грн
1000+234.66 грн
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QJ6025NH4TP media?resourcetype=datasheets&itemid=1d60b987-d30b-4516-93ee-943bcce7172d&filename=littelfuse_thyristor_qxx12xhx_datasheet.pdf
QJ6025NH4TP
Виробник: IXYS
Description: TRIAC 600V 25A TO263
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - Non Rep. Surge 50, 60Hz (Itsm): 208A, 250A
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Hold (Ih) (Max): 50 mA
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Triac Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.63 грн
50+245.67 грн
100+227.64 грн
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IXFT78N60X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft78n60x3hv_datasheet.pdf.pdf
IXFT78N60X3HV
Виробник: IXYS
Description: MOSFET ULTRA 600V 78A TO268HV
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R0964LC12E
Виробник: IXYS
Description: SCR 1.2KV 1971A W10
Voltage - On State (Vtm) (Max): 1.96 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 964 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 10800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AB, B-PuK
Packaging: Box
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 1971 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W10
Current - Off State (Max): 70 mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+27782.47 грн
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MDC600-22IO1W
Виробник: IXYS
Description: MOD BIPOLAR DIODE 2200V
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N6012ZD040 media?resourcetype=datasheets&amp;itemid=2b3c79ff-9988-4f36-8452-f873c8d9528f&amp;filename=littelfuse_discrete_thyristors_phase_control_n6012zd0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 11795A W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 71500A @ 50Hz
Current - On State (It (AV)) (Max): 6012 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.45 V
Current - Off State (Max): 100 mA
Supplier Device Package: W46
Current - On State (It (RMS)) (Max): 11795 A
Voltage - Off State: 400 V
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IXTP28N15P
Виробник: IXYS
Description: MOSFET N-CH TO-220
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N3165HA260
Виробник: IXYS
Description: SCR 2.6KV 6230A W79
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
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N3165HA280
Виробник: IXYS
Description: SCR 2.8KV 6230A W79
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
Voltage - Off State: 2.8 kV
Current - On State (It (RMS)) (Max): 6230 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W79
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3165 A
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MDMA110P1600TG media?resourcetype=datasheets&itemid=a1f04155-5cf0-4999-955c-addf7cb69dc5&filename=Littelfuse-Power-Semiconductors-MDMA110P1600TG-Datasheet
MDMA110P1600TG
Виробник: IXYS
Description: DIODE MOD GP 1600V 110A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 110A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 110 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
на замовлення 359 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1949.43 грн
36+1777.51 грн
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N2830HE260
Виробник: IXYS
Description: SCR 2.6KV 5585A W80
Voltage - Off State: 2.6 kV
Current - On State (It (RMS)) (Max): 5585 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 2830 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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DFE240X600NA media?resourcetype=datasheets&itemid=5feac88a-b7aa-4d9e-91e0-6524932e5d38&filename=littelfuse%2520power%2520semiconductors%2520dfe240x600na%2520datasheet.pdf
DFE240X600NA
Виробник: IXYS
Description: DIODE MOD GP 600V 120A SOT227B
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 120 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: SOT-227B
Current - Average Rectified (Io) (per Diode): 120A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 80 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2532.51 грн
10+1865.72 грн
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IXTD3N50P-2J
Виробник: IXYS
Description: MOSFET N-CH 500V 3A DIE
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IXTM67N10
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFM67N10
Виробник: IXYS
Description: MOSFET N-CH 100V 67A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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STP802U2SRP littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272
STP802U2SRP
Виробник: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+86.89 грн
Мінімальне замовлення: 2500
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STP802U2SRP littelfuse-thyristor-stp802u2srp-datasheet?assetguid=8bfa922f-512f-4095-bee0-385789b17272
STP802U2SRP
Виробник: IXYS
Description: SCR MODULE 800V 0.6A 8-SOIC
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 0.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 24A
Current - Gate Trigger (Igt) (Max): 100 µA
Current - Hold (Ih) (Max): 3 mA
Structure: Independent - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+272.95 грн
10+172.26 грн
100+120.61 грн
500+92.49 грн
1000+85.84 грн
Мінімальне замовлення: 2
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MCC162-18IO1B
MCC162-18IO1B
Виробник: IXYS
Description: SCR MODULE 1.8KV 300A Y4-M6
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 300 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 181 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Hold (Ih) (Max): 200 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MTC120WX75GD-SMD
Виробник: IXYS
Description: MOSFET 6N-CH 75V 180A ISOPLUS
Supplier Device Package: ISOPLUS-DIL™
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL™
Packaging: Tube
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GWM160-0055X1-SMDSAM GWM160-0055X1.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A ISOPLUS
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MCD600-22IO1W
Виробник: IXYS
Description: MOD SCR HI POWER 1200V
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IXTK3N250L media?resourcetype=datasheets&itemid=697abaf0-8e4f-4022-850a-2222f0e095db&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_3n250l_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 2500V 3A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 1.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 2500 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFM15N60 IXFH%2CIXFM_15N60%2C%20IXFH%2CIXFM_20N60.pdf
Виробник: IXYS
Description: MOSFET N-CH 600V 15A TO204AE
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Tube
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IXFT52N30Q TRL IXF(H,K,T)52N30Q.pdf
Виробник: IXYS
Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-268 (IXFT)
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tape & Reel (TR)
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IXFX52N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 52A PLUS247-3
Drain to Source Voltage (Vdss): 300 V
Part Status: Obsolete
Supplier Device Package: PLUS247™-3
Power Dissipation (Max): 360W (Tc)
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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MDD26-18N1B MDD26-18N1B.pdf
MDD26-18N1B
Виробник: IXYS
Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B.pdf
MDD56-18N1B
Виробник: IXYS
Description: DIODE MOD GP 1800V 95A TO240AA
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 95A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
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IXGH56N60B3
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420
Виробник: IXYS
Description: SCR 4.2KV W77
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MDA72-16N1B MDD72,%20MDA72.pdf
MDA72-16N1B
Виробник: IXYS
Description: DIODE MODULE 1.6KV 113A TO240AA
Mounting Type: Chassis Mount
Package / Case: TO-240AA
Packaging: Box
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-240AA
Current - Average Rectified (Io) (per Diode): 113A
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3128.26 грн
10+2777.97 грн
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IXFP30N25X3M littelfuse-discrete-mosfets-ixfp30n25x3m-datasheet?assetguid=2d206ff5-b2ac-4ccd-97cf-d473755efd4c
IXFP30N25X3M
Виробник: IXYS
Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IXFJ80N25X3 PCIM_Highlights_2017.pdf
IXFJ80N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A ISO TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISO TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+984.21 грн
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MCB20P1200LB-TRR
Виробник: IXYS
Description: MCB20P1200LB-TRR
товару немає в наявності
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MCB30P1200LB-TRR media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 1200V 9SMPD
Supplier Device Package: 9-SMPD-B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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CLE90UH1200TLB-TRR Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR SMPD
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MCB60P1200TLB-TRR
Виробник: IXYS
Description: MCB60P1200TLB-TRR
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MCB40P1200LB-TRR
Виробник: IXYS
Description: MCB40P1200LB-TRR
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DHG60U1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DHG40B1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Average Rectified (Io): 34 A
Voltage - Peak Reverse (Max): 1.2 kV
Part Status: Active
Supplier Device Package: 9-SMPD-B
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Packaging: Tape & Reel (TR)
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MKH17RP650DCGL-TRR
Виробник: IXYS
Description: MKH17RP650DCGLB-TRR
Part Status: Active
Packaging: Tape & Reel (TR)
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N3175HE160
Виробник: IXYS
Description: SCR 1.6KV 6310A W80
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N3175HE180 media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 6310A W80
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 6310 A
Supplier Device Package: W80
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 1.2 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 3175 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
Mounting Type: Chassis Mount
Package / Case: TO-200AF
Packaging: Box
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IXA20RG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TUB
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TRR
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
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IXA20I1200PZ-TUB
IXA20I1200PZ-TUB
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Power - Max: 165 W
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IXA20I1200PZ-TRL
IXA20I1200PZ-TRL
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Power - Max: 165 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 38 A
Gate Charge: 47 nC
Test Condition: 600V, 15A, 56Ohm, 15V
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Td (on/off) @ 25°C: 48ns/230ns
IGBT Type: PT
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Input Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IXYP24N100A4 littelfuse-discrete-igbts-ixy-24n100a4-datasheet?assetguid=10de694c-f2b8-4ef8-81d5-7cb713d12062
IXYP24N100A4
Виробник: IXYS
Description: IGBT PT 1000V 85A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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IXFP8N65X2M
IXFP8N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
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QJ8035LH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035LH4TP
Виробник: IXYS
Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+536.41 грн
10+350.38 грн
100+256.22 грн
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QJ8035RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+471.53 грн
10+305.66 грн
100+221.69 грн
500+174.49 грн
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QJ8035NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 648 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+526.12 грн
10+343.07 грн
100+250.55 грн
500+198.16 грн
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IXFK170N25X3 littelfuse-discrete-mosfets-ixf-170n25x3-datasheet?assetguid=27111ec5-cb82-481f-918b-bee4de39fe3a
IXFK170N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 85A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-264AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1542.77 грн
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VBE60-12A VBE6012A.pdf
VBE60-12A
Виробник: IXYS
Description: BRIDGE RECT 1P 1.2KV 60A SOT227B
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2279.34 грн
10+1621.24 грн
100+1423.14 грн
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MDNA660U2200PT-PC
Виробник: IXYS
Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
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N1725MC360
Виробник: IXYS
Description: SCR 3.6KV 3360A W70
Mounting Type: Chassis Mount
Package / Case: TO-200AC, K-PUK
Packaging: Box
Voltage - Off State: 3.6 kV
Current - On State (It (RMS)) (Max): 3360 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: W70
Current - Off State (Max): 150 mA
Voltage - On State (Vtm) (Max): 3 V
Voltage - Gate Trigger (Vgt) (Max): 3 V
Current - On State (It (AV)) (Max): 1725 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Hold (Ih) (Max): 1 A
Operating Temperature: -40°C ~ 125°C
SCR Type: Standard Recovery
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IXTA140P05T-TRL
IXTA140P05T-TRL
Виробник: IXYS
Description: IXTA140P05T
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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QJ8030RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 679 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+439.10 грн
10+283.49 грн
100+204.74 грн
500+160.64 грн
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QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+219.28 грн
Мінімальне замовлення: 500
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QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+526.12 грн
10+343.07 грн
100+250.55 грн
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QJ8030NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.51 грн
10+332.09 грн
100+242.09 грн
500+191.21 грн
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