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MCC132-14IO1B MCC132-14IO1B IXYS Description: BIPOLAR MODULE - THYRISTOR Y4-M
товар відсутній
IXTY4N65X2-TRL IXTY4N65X2-TRL IXYS Description: MOSFET N-CH 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
товар відсутній
DSS6-0025BS-TUB IXYS Description: DIODE SCHOTTKY 25V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 639pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 mA @ 25 V
товар відсутній
DSEP12-12AZ-TRL DSEP12-12AZ-TRL IXYS DSEP12-12AZ.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+165.7 грн
Мінімальне замовлення: 800
IXYP10N65B3D1 IXYP10N65B3D1 IXYS media?resourcetype=datasheets&itemid=258ad532-f085-4203-aad2-fdf2106d2663&filename=littelfuse_discrete_igbts_xpt_ixyp10n65b3d1_datasheet.pdf Description: IGBT PT 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
товар відсутній
IXTQ3N150M IXYS media?resourcetype=datasheets&itemid=c6db860a-1248-4c1d-a54c-876cdbca4ff5&filename=littelfuse_discrete_mosfets_n-channel_standard_ixtq3n150m_datasheet.pdf Description: MOSFET N-CH 1500V 1.83A TO3PFP
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PFP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товар відсутній
DSS6-0045AS-TUB IXYS Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 497pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
товар відсутній
IXFA90N20X3TRL IXFA90N20X3TRL IXYS Description: MOSFET N-CH 200V 90A TO263
товар відсутній
CMA30E1600PZ-TUB CMA30E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf Description: SCR 1.6KV 47A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
товар відсутній
IXGA30N120B3-TRL IXGA30N120B3-TRL IXYS Description: IXGA30N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXFA12N65X2-TRL IXFA12N65X2-TRL IXYS Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXTT96N20P-TRL IXYS Description: MOSFET N-CH 200V 96A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 48A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXFT50N60P3-TRL IXYS Description: MOSFET N-CH 600V 50A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 25A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTA80N10T-TRL IXTA80N10T-TRL IXYS Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
товар відсутній
IXGA20N120B3-TRL IXGA20N120B3-TRL IXYS Description: IXGA20N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
DSB15IM30UC-TUB IXYS media?resourcetype=datasheets&itemid=eb755eac-9568-4fd3-b4f8-a4c4221d4916&filename=power_semiconductor_discrete_diode_dsb15im30uc_datasheet.pdf Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
IXYN120N65B3D1 IXYS Description: IGBT MODULE DISC IGBT SOT-227UI
товар відсутній
CLA30MT1200NPZ-TUB CLA30MT1200NPZ-TUB IXYS Description: POWER THYRISTOR DISCRETES-TRIAC
товар відсутній
DSEI12-12AZ-TRL DSEI12-12AZ-TRL IXYS media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
IXGA48N60C3-TRL IXGA48N60C3-TRL IXYS Description: IXGA48N60C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXTY02N120P-TRL IXYS Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
товар відсутній
IXYP20N65C3 IXYS Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
товар відсутній
IXTA50N20P-TRL IXTA50N20P-TRL IXYS Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товар відсутній
IXTQ60N20T IXYS media?resourcetype=datasheets&itemid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1&filename=littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
IXTA50N25T-TRL IXTA50N25T-TRL IXYS Description: MOSFET N-CH 250V 50A TO263
товар відсутній
IXYH120N65C3 IXYS media?resourcetype=datasheets&itemid=3a25f202-33cd-4cf6-bacc-7b1739e41fec&filename=littelfuse_discrete_igbts_xpt_ixyh120n65c3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
товар відсутній
IXTX660N04T4 IXYS Description: DISC MSFT NCHTRENCHGATE-GEN4 TO-
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
товар відсутній
CLA40MT1200NPZ-TUB CLA40MT1200NPZ-TUB IXYS media?resourcetype=datasheets&itemid=2578b596-bc17-45d7-a315-fcae3988392d&filename=littelfuse%2520power%2520semiconductors%2520cla40mt1200npz%2520datasheet.pdf Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
товар відсутній
IXTA90N20X3 IXTA90N20X3 IXYS media?resourcetype=datasheets&itemid=0d436688-a336-4e6b-a404-a707c9c33210&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товар відсутній
ZY200L460 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: ZY200L460
Packaging: Bulk
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+166.2 грн
Мінімальне замовлення: 250
IXTT170N10P-TR IXYS Description: MOSFET N-CH 100V 170A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 85A, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
DMA10IM1200UZ-TUB IXYS Description: POWER DIODE DISCRETES-RECTIFIER
товар відсутній
IXYA30N120A4HV IXYA30N120A4HV IXYS media?resourcetype=datasheets&itemid=9fce9f90-2af9-4a75-bf7f-be975fe328f4&filename=littelfuse_discrete_igbts_xpt_ixy_30n120a4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
300+454.17 грн
Мінімальне замовлення: 300
IXYH30N120B4 IXYS media?resourcetype=datasheets&amp;itemid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c&amp;filename=littelfuse_discrete_igbts_xpt_ixyh30n120b4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
300+548.72 грн
Мінімальне замовлення: 300
IXGP28N60A3M IXYS Description: DISC IGBT PT-LOW FREQUENCY TO-22
товар відсутній
IXTA80N075L2-TRL IXTA80N075L2-TRL IXYS Description: MOSFET N-CH 75V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTA3N100D2-TRL IXTA3N100D2-TRL IXYS Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXYN300N65A3 IXYN300N65A3 IXYS Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
товар відсутній
CME30E1600PZ-TRL CME30E1600PZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf Description: SCR 1.6KV 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYH120N65B3 IXYS Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
товар відсутній
DSB15IM30UC-TRL IXYS media?resourcetype=datasheets&itemid=eb755eac-9568-4fd3-b4f8-a4c4221d4916&filename=power_semiconductor_discrete_diode_dsb15im30uc_datasheet.pdf Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
IXFA110N15T2 IXFA110N15T2 IXYS Description: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXYA20N120B4HV IXYA20N120B4HV IXYS littelfuse_discrete_igbts_xpt_ixy_20n120b4_datasheet.pdf.pdf Description: IGBT 1200V 20A GENX4 XPT TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
IXYA20N120C4HV IXYA20N120C4HV IXYS littelfuse_discrete_igbts_xpt_ixy_20n120c4_datasheet.pdf.pdf Description: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
DSEP15-06AS-TRL DSEP15-06AS-TRL IXYS media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
DSEP15-06AS-TUB DSEP15-06AS-TUB IXYS media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
N2600MC160 N2600MC160 IXYS Description: SCR 1.6KV 5200A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
Current - On State (It (AV)) (Max): 2600 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 100 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5200 A
Voltage - Off State: 1.6 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+15433.78 грн
N2600MC180 IXYS Description: SCR 1.8KV 5200A W70
товар відсутній
DSEI2X61-10B DSEI2X61-10B IXYS DSEI2x61-10B.pdf Description: DIODE MODULE GP 1KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
на замовлення 878 шт:
термін постачання 21-31 дні (днів)
1+2280.67 грн
10+ 1951.68 грн
100+ 1707.03 грн
IXFN66N85X IXFN66N85X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn66n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+2906.66 грн
10+ 2494 грн
100+ 2189.11 грн
DSEI2X61-06C DSEI2X61-06C IXYS DSEI2x61-04C_DSEI2x61-06C.pdf Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 839 шт:
термін постачання 21-31 дні (днів)
1+1896.72 грн
10+ 1623.01 грн
100+ 1419.53 грн
500+ 1136.79 грн
DPG60C300PC-TUB DPG60C300PC-TUB IXYS media?resourcetype=datasheets&itemid=bf169023-856e-487a-85f5-85c9c2f99e11&filename=littelfuse%2520power%2520semiconductors%2520dpg60c300pc%2520datasheet.pdf Description: DIODE ARRAY GP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+403.4 грн
50+ 307.8 грн
100+ 263.82 грн
IXTY08N50D2 IXTY08N50D2 IXYS DS100178A(IXTY-TA-TP08N50D2).pdf Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2265 шт:
термін постачання 21-31 дні (днів)
2+190.9 грн
70+ 147.93 грн
140+ 121.71 грн
560+ 96.65 грн
1050+ 82.01 грн
2030+ 77.91 грн
Мінімальне замовлення: 2
IXTA08N50D2 IXTA08N50D2 IXYS DS100178A(IXTY-TA-TP08N50D2).pdf Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 905 шт:
термін постачання 21-31 дні (днів)
2+190.9 грн
50+ 145.65 грн
100+ 124.84 грн
500+ 104.14 грн
Мінімальне замовлення: 2
IXFK98N50P3 IXFK98N50P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf Description: MOSFET N-CH 500V 98A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товар відсутній
IXTP110N12T2 IXTP110N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
товар відсутній
IXCY10M90S-TRL IXCY10M90S-TRL IXYS DS98729A(IXCP-CY10M90S).pdf Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+158.16 грн
Мінімальне замовлення: 2500
IXCY10M90S-TRL IXCY10M90S-TRL IXYS DS98729A(IXCP-CY10M90S).pdf Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
на замовлення 4621 шт:
термін постачання 21-31 дні (днів)
1+314.8 грн
10+ 272.55 грн
25+ 257.66 грн
100+ 209.56 грн
250+ 198.81 грн
500+ 178.4 грн
1000+ 147.99 грн
IXGA48N60A3-TRL IXGA48N60A3-TRL IXYS littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf.pdf Description: IXGA48N60A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
800+237.29 грн
1600+ 195.66 грн
2400+ 184.23 грн
Мінімальне замовлення: 800
IXGA48N60B3-TRL IXGA48N60B3-TRL IXYS Description: IXGA48N60B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
MCC132-14IO1B
MCC132-14IO1B
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR Y4-M
товар відсутній
IXTY4N65X2-TRL
IXTY4N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
товар відсутній
DSS6-0025BS-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 25V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 639pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 mA @ 25 V
товар відсутній
DSEP12-12AZ-TRL DSEP12-12AZ.pdf
DSEP12-12AZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+165.7 грн
Мінімальне замовлення: 800
IXYP10N65B3D1 media?resourcetype=datasheets&itemid=258ad532-f085-4203-aad2-fdf2106d2663&filename=littelfuse_discrete_igbts_xpt_ixyp10n65b3d1_datasheet.pdf
IXYP10N65B3D1
Виробник: IXYS
Description: IGBT PT 650V 32A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/125ns
Switching Energy: 300µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 20 nC
Part Status: Active
Current - Collector (Ic) (Max): 32 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 160 W
товар відсутній
IXTQ3N150M media?resourcetype=datasheets&itemid=c6db860a-1248-4c1d-a54c-876cdbca4ff5&filename=littelfuse_discrete_mosfets_n-channel_standard_ixtq3n150m_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 1500V 1.83A TO3PFP
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PFP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
товар відсутній
DSS6-0045AS-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 6A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 497pF @ 5V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 6 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
товар відсутній
IXFA90N20X3TRL
IXFA90N20X3TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263
товар відсутній
CMA30E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCMA30E1600PZ.pdf
CMA30E1600PZ-TUB
Виробник: IXYS
Description: SCR 1.6KV 47A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 28 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.42 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 1.6 kV
товар відсутній
IXGA30N120B3-TRL
IXGA30N120B3-TRL
Виробник: IXYS
Description: IXGA30N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/127ns
Switching Energy: 3.47mJ (on), 2.16mJ (off)
Test Condition: 960V, 30A, 5Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 300 W
товар відсутній
IXFA12N65X2-TRL
IXFA12N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 6A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1134 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
товар відсутній
IXTT96N20P-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 96A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 48A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товар відсутній
IXFT50N60P3-TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 25A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
товар відсутній
IXTA80N10T-TRL
IXTA80N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
товар відсутній
IXGA20N120B3-TRL
IXGA20N120B3-TRL
Виробник: IXYS
Description: IXGA20N120B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 16A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 16ns/150ns
Switching Energy: 920µJ (on), 560µJ (off)
Test Condition: 600V, 16A, 15Ohm, 15V
Gate Charge: 51 nC
Part Status: Active
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 180 W
товар відсутній
DSB15IM30UC-TUB media?resourcetype=datasheets&itemid=eb755eac-9568-4fd3-b4f8-a4c4221d4916&filename=power_semiconductor_discrete_diode_dsb15im30uc_datasheet.pdf
Виробник: IXYS
Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
IXYN120N65B3D1
Виробник: IXYS
Description: IGBT MODULE DISC IGBT SOT-227UI
товар відсутній
CLA30MT1200NPZ-TUB
CLA30MT1200NPZ-TUB
Виробник: IXYS
Description: POWER THYRISTOR DISCRETES-TRIAC
товар відсутній
DSEI12-12AZ-TRL media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf
DSEI12-12AZ-TRL
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
товар відсутній
IXGA48N60C3-TRL
IXGA48N60C3-TRL
Виробник: IXYS
Description: IXGA48N60C3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/60ns
Switching Energy: 410µJ (on), 230µJ (off)
Test Condition: 400V, 30A, 3Ohm, 15V
Gate Charge: 77 nC
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 300 W
товар відсутній
IXTY02N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 200MA TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 75Ohm @ 100mA, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 104 pF @ 25 V
товар відсутній
IXYP20N65C3
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
товар відсутній
IXTA50N20P-TRL
IXTA50N20P-TRL
Виробник: IXYS
Description: MOSFET N-CH 200V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
товар відсутній
IXTQ60N20T media?resourcetype=datasheets&itemid=a2bc6b7d-dab8-4007-9c70-5b1fc95634b1&filename=littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_60n20t_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 200V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 10V
Power Dissipation (Max): 500W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4530 pF @ 25 V
товар відсутній
IXTA50N25T-TRL
IXTA50N25T-TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 50A TO263
товар відсутній
IXYH120N65C3 media?resourcetype=datasheets&itemid=3a25f202-33cd-4cf6-bacc-7b1739e41fec&filename=littelfuse_discrete_igbts_xpt_ixyh120n65c3_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 1360 W
товар відсутній
IXTX660N04T4
Виробник: IXYS
Description: DISC MSFT NCHTRENCHGATE-GEN4 TO-
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
товар відсутній
CLA40MT1200NPZ-TUB media?resourcetype=datasheets&itemid=2578b596-bc17-45d7-a315-fcae3988392d&filename=littelfuse%2520power%2520semiconductors%2520cla40mt1200npz%2520datasheet.pdf
CLA40MT1200NPZ-TUB
Виробник: IXYS
Description: TRIAC 1.2KV 44A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 215A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 44 A
Voltage - Off State: 1.2 kV
товар відсутній
IXTA90N20X3 media?resourcetype=datasheets&itemid=0d436688-a336-4e6b-a404-a707c9c33210&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixta90n20x3_datasheet.pdf
IXTA90N20X3
Виробник: IXYS
Description: MOSFET N-CH 200V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 45A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V
товар відсутній
ZY200L460 littelfuse_power_semiconductors_product_catalog.pdf.pdf
Виробник: IXYS
Description: ZY200L460
Packaging: Bulk
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
250+166.2 грн
Мінімальне замовлення: 250
IXTT170N10P-TR
Виробник: IXYS
Description: MOSFET N-CH 100V 170A TO268
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 85A, 10V
Power Dissipation (Max): 715W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 198 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
товар відсутній
DMA10IM1200UZ-TUB
Виробник: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
товар відсутній
IXYA30N120A4HV media?resourcetype=datasheets&itemid=9fce9f90-2af9-4a75-bf7f-be975fe328f4&filename=littelfuse_discrete_igbts_xpt_ixy_30n120a4_datasheet.pdf
IXYA30N120A4HV
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 25A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/235ns
Switching Energy: 4mJ (on), 3.4mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 184 A
Power - Max: 500 W
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+454.17 грн
Мінімальне замовлення: 300
IXYH30N120B4 media?resourcetype=datasheets&amp;itemid=13438fd2-8a6e-4f3e-8fa7-b91305e3767c&amp;filename=littelfuse_discrete_igbts_xpt_ixyh30n120b4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 4.4mJ (on), 2.6mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 58 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 174 A
Power - Max: 500 W
на замовлення 840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+548.72 грн
Мінімальне замовлення: 300
IXGP28N60A3M
Виробник: IXYS
Description: DISC IGBT PT-LOW FREQUENCY TO-22
товар відсутній
IXTA80N075L2-TRL
IXTA80N075L2-TRL
Виробник: IXYS
Description: MOSFET N-CH 75V 80A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
товар відсутній
IXTA3N100D2-TRL
IXTA3N100D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
товар відсутній
IXYN300N65A3
IXYN300N65A3
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 SOT-227B(MIN
товар відсутній
CME30E1600PZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf
CME30E1600PZ-TRL
Виробник: IXYS
Description: SCR 1.6KV 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYH120N65B3
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 100A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/168ns
Switching Energy: 1.34mJ (on), 1.5mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 760 A
Power - Max: 1360 W
товар відсутній
DSB15IM30UC-TRL media?resourcetype=datasheets&itemid=eb755eac-9568-4fd3-b4f8-a4c4221d4916&filename=power_semiconductor_discrete_diode_dsb15im30uc_datasheet.pdf
Виробник: IXYS
Description: DIODE SCHOTTKY 30V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 292pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 15 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
товар відсутній
IXFA110N15T2
IXFA110N15T2
Виробник: IXYS
Description: MOSFET N-CH 150V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 55A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
товар відсутній
IXYA20N120B4HV littelfuse_discrete_igbts_xpt_ixy_20n120b4_datasheet.pdf.pdf
IXYA20N120B4HV
Виробник: IXYS
Description: IGBT 1200V 20A GENX4 XPT TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 15ns/200ns
Switching Energy: 3.9mJ (on), 1.6mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 76 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 130 A
Power - Max: 375 W
на замовлення 231 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
IXYA20N120C4HV littelfuse_discrete_igbts_xpt_ixy_20n120c4_datasheet.pdf.pdf
IXYA20N120C4HV
Виробник: IXYS
Description: IGBT 1200V 20A X4 HSPEED TO263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 14ns/160ns
Switching Energy: 4.4mJ (on), 1mJ (off)
Test Condition: 960mV, 20A, 10Ohm, 15V
Gate Charge: 44 nC
Part Status: Active
Current - Collector (Ic) (Max): 68 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 375 W
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+719.64 грн
50+ 553.18 грн
100+ 494.96 грн
DSEP15-06AS-TRL media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf
DSEP15-06AS-TRL
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
DSEP15-06AS-TUB media?resourcetype=datasheets&itemid=1dbb9792-2f0a-4993-9628-22a96109cc5e&filename=littelfuse%2520power%2520semiconductors%2520dsep15-06as%2520datasheet.pdf
DSEP15-06AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 15A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 400V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.04 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
товар відсутній
N2600MC160
N2600MC160
Виробник: IXYS
Description: SCR 1.6KV 5200A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 33000A @ 50Hz
Current - On State (It (AV)) (Max): 2600 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2 V
Current - Off State (Max): 100 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 5200 A
Voltage - Off State: 1.6 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+15433.78 грн
N2600MC180
Виробник: IXYS
Description: SCR 1.8KV 5200A W70
товар відсутній
DSEI2X61-10B DSEI2x61-10B.pdf
DSEI2X61-10B
Виробник: IXYS
Description: DIODE MODULE GP 1KV 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 60 A
Current - Reverse Leakage @ Vr: 3 mA @ 1000 V
на замовлення 878 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2280.67 грн
10+ 1951.68 грн
100+ 1707.03 грн
IXFN66N85X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfn66n85x_datasheet.pdf.pdf
IXFN66N85X
Виробник: IXYS
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2906.66 грн
10+ 2494 грн
100+ 2189.11 грн
DSEI2X61-06C DSEI2x61-04C_DSEI2x61-06C.pdf
DSEI2X61-06C
Виробник: IXYS
Description: DIODE MODULE GP 600V 60A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
на замовлення 839 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1896.72 грн
10+ 1623.01 грн
100+ 1419.53 грн
500+ 1136.79 грн
DPG60C300PC-TUB media?resourcetype=datasheets&itemid=bf169023-856e-487a-85f5-85c9c2f99e11&filename=littelfuse%2520power%2520semiconductors%2520dpg60c300pc%2520datasheet.pdf
DPG60C300PC-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 300V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 30 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+403.4 грн
50+ 307.8 грн
100+ 263.82 грн
IXTY08N50D2 DS100178A(IXTY-TA-TP08N50D2).pdf
IXTY08N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2265 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190.9 грн
70+ 147.93 грн
140+ 121.71 грн
560+ 96.65 грн
1050+ 82.01 грн
2030+ 77.91 грн
Мінімальне замовлення: 2
IXTA08N50D2 DS100178A(IXTY-TA-TP08N50D2).pdf
IXTA08N50D2
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+190.9 грн
50+ 145.65 грн
100+ 124.84 грн
500+ 104.14 грн
Мінімальне замовлення: 2
IXFK98N50P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_98n50p3_datasheet.pdf.pdf
IXFK98N50P3
Виробник: IXYS
Description: MOSFET N-CH 500V 98A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
товар відсутній
IXTP110N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_110n12t2_datasheet.pdf.pdf
IXTP110N12T2
Виробник: IXYS
Description: MOSFET N-CH 120V 110A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 55A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6570 pF @ 25 V
товар відсутній
IXCY10M90S-TRL DS98729A(IXCP-CY10M90S).pdf
IXCY10M90S-TRL
Виробник: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+158.16 грн
Мінімальне замовлення: 2500
IXCY10M90S-TRL DS98729A(IXCP-CY10M90S).pdf
IXCY10M90S-TRL
Виробник: IXYS
Description: IC CURRENT REGULATOR TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 900V
Current - Output: 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: TO-252AA
на замовлення 4621 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+314.8 грн
10+ 272.55 грн
25+ 257.66 грн
100+ 209.56 грн
250+ 198.81 грн
500+ 178.4 грн
1000+ 147.99 грн
IXGA48N60A3-TRL littelfuse_discrete_igbts_pt_ixg_48n60a3_datasheet.pdf.pdf
IXGA48N60A3-TRL
Виробник: IXYS
Description: IXGA48N60A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 25ns/334ns
Switching Energy: 950µJ (on), 2.9mJ (off)
Test Condition: 480V, 32A, 5Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 300 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+237.29 грн
1600+ 195.66 грн
2400+ 184.23 грн
Мінімальне замовлення: 800
IXGA48N60B3-TRL
IXGA48N60B3-TRL
Виробник: IXYS
Description: IXGA48N60B3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
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