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N3597ML060 IXYS Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
товар відсутній
N4165EE420 IXYS media?resourcetype=datasheets&amp;itemid=8f5629d2-3a9b-4eb7-9d3a-e75edb824ec3&amp;filename=littelfuse_discrete_thyristors_phase_control_n4165ee4_0_datasheet.pdf Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
товар відсутній
N1174JK200 IXYS media?resourcetype=datasheets&amp;itemid=5bd37c00-474b-48d4-952c-f692b399cfb1&amp;filename=littelfuse_discrete_thyristors_phase_control_n1174jk2_0_datasheet.pdf Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
товар відсутній
W3090HA600 IXYS Description: RECTIFIER DIODE
товар відсутній
K4005EA520 IXYS media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
товар відсутній
K1010MA650 IXYS Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC06C IXYS Description: SCR 600MV 1713A W58
товар відсутній
W6262ZC200 IXYS media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf Description: DIODE GEN PURP 2KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
товар відсутній
P0848YC04C IXYS Description: SCR 400MV 1713A W58
товар відсутній
K4005EA480 IXYS media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
товар відсутній
N3597ML040 IXYS Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
товар відсутній
W6262ZC240 IXYS media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf Description: DIODE GEN PURP 2.4KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
товар відсутній
N1581QL160 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
товар відсутній
N1581QL180 IXYS media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
товар відсутній
W1411LC360 IXYS Description: RECTIFIER DIODE
товар відсутній
N5415EA320 IXYS Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC04B IXYS Description: SCR 400MV 1713A W58
товар відсутній
IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+274.63 грн
Мінімальне замовлення: 800
IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+85.29 грн
Мінімальне замовлення: 2500
DSEI12-06AS-TUB DSEI12-06AS-TUB IXYS media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
2+193.14 грн
50+ 147.47 грн
Мінімальне замовлення: 2
IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+234.35 грн
Мінімальне замовлення: 800
ZY180R480 ZY180R480 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
товар відсутній
DSEI120-12AZ-TUB IXYS DSEI120-12AZ.pdf Description: DIODE GP 1.2KV 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
товар відсутній
IXBH42N250 IXBH42N250 IXYS media?resourcetype=datasheets&amp;itemid=deeed825-f7c5-420f-8a6b-2589ebdb9560&amp;filename=littelfuse_discrete_igbts_bimosfet_ixbh42n250_datasheet.pdf Description: BIMOSFET TRANS 2500V 42A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+2471.64 грн
10+ 2120.75 грн
100+ 1861.45 грн
ZY180L480 ZY180L480 IXYS littelfuse_power_semiconductors_product_catalog.pdf.pdf Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
2+277.24 грн
10+ 224.42 грн
100+ 181.57 грн
Мінімальне замовлення: 2
IXTA76P10T-TRL IXTA76P10T-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
800+259.8 грн
1600+ 225.16 грн
2400+ 210.98 грн
Мінімальне замовлення: 800
IXTY01N100D-TRL IXTY01N100D-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товар відсутній
DSEP12-12BZ-TUB DSEP12-12BZ-TUB IXYS media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP12-12AZ-TUB DSEP12-12AZ-TUB IXYS DSEP12-12AZ.pdf Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+213.81 грн
Мінімальне замовлення: 2
DSEI12-12AZ-TUB DSEI12-12AZ-TUB IXYS media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
2+197.42 грн
Мінімальне замовлення: 2
IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf Description: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
800+274.63 грн
Мінімальне замовлення: 800
IXTA06N120P-TRL IXTA06N120P-TRL IXYS Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
товар відсутній
IXFA80N25X3TRL IXFA80N25X3TRL IXYS Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
IXTA76P10T-TRL IXTA76P10T-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 76A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)
1+411.94 грн
10+ 340.27 грн
100+ 283.53 грн
IXTY1R6N50D2-TRL IXTY1R6N50D2-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_52p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 2171 шт:
термін постачання 21-31 дні (днів)
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
IXTA6N50D2-TRL IXTA6N50D2-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1144 шт:
термін постачання 21-31 дні (днів)
1+615.77 грн
10+ 508.55 грн
100+ 423.82 грн
IXTY01N100D-TRL IXTY01N100D-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
2+252.3 грн
10+ 203.56 грн
100+ 164.68 грн
Мінімальне замовлення: 2
IXTA180N10T-TRL IXTA180N10T-TRL IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 2383 шт:
термін постачання 21-31 дні (днів)
1+388.42 грн
10+ 313.85 грн
100+ 253.88 грн
IXTA26P20P-TRL IXTA26P20P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2034 шт:
термін постачання 21-31 дні (днів)
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n50_datasheet.pdf.pdf Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+188.87 грн
10+ 151.26 грн
100+ 120.42 грн
500+ 95.62 грн
1000+ 81.14 грн
Мінімальне замовлення: 2
IXTA36P15P-TRL IXTA36P15P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 1852 шт:
термін постачання 21-31 дні (днів)
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
DSEP40-03AS-TUB DSEP40-03AS-TUB IXYS media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
IXYH30N65B3D1 IXYS Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
DCG20B650LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXG50I4500KN IXYS Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
IXFA16N50P-TRL IXFA16N50P-TRL IXYS Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
товар відсутній
CLA100E1200KB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA100E1200KB.pdf Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
25+484.32 грн
Мінімальне замовлення: 25
IXTH20N65X2 IXTH20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
1+405.53 грн
30+ 311.44 грн
120+ 278.66 грн
IXYH30N120C4 IXYS media?resourcetype=datasheets&itemid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932&filename=littelfuse_discrete_igbts_xpt_ixyh30n120c4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
CMA60MT1600NHR IXYS CMA60MT1600NHR.pdf Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYA20N120A4HV IXYA20N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixy_20n120a4_datasheet.pdf.pdf Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
1+711.99 грн
50+ 547.3 грн
100+ 489.7 грн
500+ 405.5 грн
IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товар відсутній
DSP25-16AT-TRL IXYS L015.pdf Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
CME30E1600PZ-TUB CME30E1600PZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
CMA80MT1600NHR IXYS media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
товар відсутній
IXTA34N65X2-TRL IXTA34N65X2-TRL IXYS Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IXTA20N65X-TRL IXTA20N65X-TRL IXYS Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
товар відсутній
IXGP48N60B3 IXGP48N60B3 IXYS media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf Description: DISC IGBT PT-MID FREQUENCY TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXXH75N60B3 IXYS media?resourcetype=datasheets&itemid=65b0869f-7d80-4345-86e6-e47e8d0b05bf&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3_datasheet.pdf Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товар відсутній
N3597ML060
Виробник: IXYS
Description: SCR 600V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 600 V
товар відсутній
N4165EE420 media?resourcetype=datasheets&amp;itemid=8f5629d2-3a9b-4eb7-9d3a-e75edb824ec3&amp;filename=littelfuse_discrete_thyristors_phase_control_n4165ee4_0_datasheet.pdf
Виробник: IXYS
Description: SCR 4.2KV W108
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 56000A @ 50Hz
Current - On State (It (AV)) (Max): 4165 A
Supplier Device Package: W108
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.2 kV
товар відсутній
N1174JK200 media?resourcetype=datasheets&amp;itemid=5bd37c00-474b-48d4-952c-f692b399cfb1&amp;filename=littelfuse_discrete_thyristors_phase_control_n1174jk2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2KV 2313A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Current - On State (It (AV)) (Max): 1174 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.46 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2313 A
Voltage - Off State: 2 kV
товар відсутній
W3090HA600
Виробник: IXYS
Description: RECTIFIER DIODE
товар відсутній
K4005EA520 media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf
Виробник: IXYS
Description: SCR 5.2KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 5.2 kV
товар відсутній
K1010MA650
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC06C
Виробник: IXYS
Description: SCR 600MV 1713A W58
товар відсутній
W6262ZC200 media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 2KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2000 V
товар відсутній
P0848YC04C
Виробник: IXYS
Description: SCR 400MV 1713A W58
товар відсутній
K4005EA480 media?resourcetype=datasheets&amp;itemid=795c785d-f0bc-46a5-92cf-f8e2f0ae9927&amp;filename=littelfuse_discrete_thyristors_medium_voltage_k4005ea480-520_datasheet.pdf
Виробник: IXYS
Description: SCR 4.8KV W107
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 43200A @ 50Hz
Current - On State (It (AV)) (Max): 4005 A
Supplier Device Package: W107
Part Status: Discontinued at Digi-Key
Voltage - Off State: 4.8 kV
товар відсутній
N3597ML040
Виробник: IXYS
Description: SCR 400V 7030A WP5
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3597 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.53 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP5
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 7030 A
Voltage - Off State: 400 V
товар відсутній
W6262ZC240 media?resourcetype=datasheets&itemid=936ce59f-4289-4dfe-abea-1f2e097ef0d5&filename=littelfuse_discrete_diodes_rectifier_w6262z_2_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 2.4KV 6262A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6262A
Supplier Device Package: W7
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.18 V @ 6800 A
Current - Reverse Leakage @ Vr: 150 mA @ 2400 V
товар відсутній
N1581QL160 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.6KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.6 kV
товар відсутній
N1581QL180 media?resourcetype=datasheets&amp;itemid=ea47f116-9cdf-4dc4-a5dd-3ccc5dcaa7c2&amp;filename=littelfuse_discrete_thyristors_phase_control_n1581ql1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 3050A WP6
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Current - On State (It (AV)) (Max): 1535 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP6
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3050 A
Voltage - Off State: 1.8 kV
товар відсутній
W1411LC360
Виробник: IXYS
Description: RECTIFIER DIODE
товар відсутній
N5415EA320
Виробник: IXYS
Description: PHASE CONTROL THYRISTOR
товар відсутній
P0848YC04B
Виробник: IXYS
Description: SCR 400MV 1713A W58
товар відсутній
IXTA26P20P-TRL littelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf
IXTA26P20P-TRL
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+274.63 грн
Мінімальне замовлення: 800
IXTY08N50D2-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n50_datasheet.pdf.pdf
IXTY08N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2500+85.29 грн
Мінімальне замовлення: 2500
DSEI12-06AS-TUB media?resourcetype=datasheets&itemid=362654c6-09c3-4831-b506-bb98d7950ba6&filename=littelfuse%2520power%2520semiconductors%2520dsei12-06as%2520datasheet.pdf
DSEI12-06AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 600V 14A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 14A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 59 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+193.14 грн
50+ 147.47 грн
Мінімальне замовлення: 2
IXTA180N10T-TRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf
IXTA180N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+234.35 грн
Мінімальне замовлення: 800
ZY180R480 littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY180R480
Виробник: IXYS
Description: X SER KEY PLUG W/WIRE 480MM RED
Packaging: Bulk
Part Status: Active
товар відсутній
DSEI120-12AZ-TUB DSEI120-12AZ.pdf
Виробник: IXYS
Description: DIODE GP 1.2KV 109A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 70 A
Current - Reverse Leakage @ Vr: 3 mA @ 1200 V
товар відсутній
IXBH42N250 media?resourcetype=datasheets&amp;itemid=deeed825-f7c5-420f-8a6b-2589ebdb9560&amp;filename=littelfuse_discrete_igbts_bimosfet_ixbh42n250_datasheet.pdf
IXBH42N250
Виробник: IXYS
Description: BIMOSFET TRANS 2500V 42A TO-247A
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.7 µs
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 42A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 72ns/445ns
Test Condition: 1250V, 42A, 20Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 104 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 500 W
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2471.64 грн
10+ 2120.75 грн
100+ 1861.45 грн
ZY180L480 littelfuse_power_semiconductors_product_catalog.pdf.pdf
ZY180L480
Виробник: IXYS
Description: X SERIES KEY PLUG W/WIRE 480MM
Packaging: Bulk
Part Status: Active
на замовлення 417 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+277.24 грн
10+ 224.42 грн
100+ 181.57 грн
Мінімальне замовлення: 2
IXTA76P10T-TRL littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf
IXTA76P10T-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+259.8 грн
1600+ 225.16 грн
2400+ 210.98 грн
Мінімальне замовлення: 800
IXTY01N100D-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTY01N100D-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
товар відсутній
DSEP12-12BZ-TUB media?resourcetype=datasheets&itemid=e6aa2de7-e5da-4c5f-8db0-895698af1fed&filename=littelfuse%2520power%2520semiconductors%2520dsep12-12bz%2520datasheet.pdf
DSEP12-12BZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.25 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEP12-12AZ-TUB DSEP12-12AZ.pdf
DSEP12-12AZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 12A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 600V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.62 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+213.81 грн
Мінімальне замовлення: 2
DSEI12-12AZ-TUB media?resourcetype=datasheets&itemid=3b99ded9-82dc-4699-ac8c-df4ed6bc2074&filename=littelfuse%2520power%2520semiconductors%2520dsei12-12az%2520datasheet.pdf
DSEI12-12AZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 11A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 6pF @ 600V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-263HV
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+197.42 грн
Мінімальне замовлення: 2
IXTA36P15P-TRL littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf
IXTA36P15P-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+274.63 грн
Мінімальне замовлення: 800
IXTA06N120P-TRL
IXTA06N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 600MA TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 34Ohm @ 300mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 236 pF @ 25 V
товар відсутній
IXFA80N25X3TRL
IXFA80N25X3TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 80A X3CLASS TO-
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
IXTA76P10T-TRL littelfuse_discrete_mosfets_p-channel_ixt_76p10t_datasheet.pdf.pdf
IXTA76P10T-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 76A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 2928 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+411.94 грн
10+ 340.27 грн
100+ 283.53 грн
IXTY1R6N50D2-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_1r6n50_datasheet.pdf.pdf
IXTY1R6N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 1.6A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
товар відсутній
IXTA52P10P-TRL littelfuse_discrete_mosfets_p-channel_ixt_52p10p_datasheet.pdf.pdf
IXTA52P10P-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 2171 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
IXTA6N50D2-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_6n50_datasheet.pdf.pdf
IXTA6N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 6A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
на замовлення 1144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+615.77 грн
10+ 508.55 грн
100+ 423.82 грн
IXTY01N100D-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTY01N100D-TRL
Виробник: IXYS
Description: MOSFET N-CH 1000V 400MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 80Ohm @ 50mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+252.3 грн
10+ 203.56 грн
100+ 164.68 грн
Мінімальне замовлення: 2
IXTA180N10T-TRL littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_180n10t_datasheet.pdf.pdf
IXTA180N10T-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 180A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 2383 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+388.42 грн
10+ 313.85 грн
100+ 253.88 грн
IXTA26P20P-TRL littelfuse_discrete_mosfets_p-channel_ixt_26p20p_datasheet.pdf.pdf
IXTA26P20P-TRL
Виробник: IXYS
Description: MOSFET P-CH 200V 26A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
IXTY08N50D2-TRL littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_08n50_datasheet.pdf.pdf
IXTY08N50D2-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 800MA TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tj)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+188.87 грн
10+ 151.26 грн
100+ 120.42 грн
500+ 95.62 грн
1000+ 81.14 грн
Мінімальне замовлення: 2
IXTA36P15P-TRL littelfuse_discrete_mosfets_p-channel_ixt_36p15p_datasheet.pdf.pdf
IXTA36P15P-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 1852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+435.46 грн
10+ 359.62 грн
100+ 299.72 грн
DSEP40-03AS-TUB media?resourcetype=datasheets&itemid=4c2d2dd8-9974-4f79-b86f-23a25c93ff5b&filename=littelfuse%2520power%2520semiconductors%2520dsep40-03as%2520datasheet.pdf
DSEP40-03AS-TUB
Виробник: IXYS
Description: DIODE GEN PURP 300V 40A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 150V, 1MHz
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 40 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
IXYH30N65B3D1
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 17ns/87ns
Switching Energy: 830µJ (on), 640µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 270 W
товар відсутній
DCG20B650LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
товар відсутній
IXG50I4500KN
Виробник: IXYS
Description: DISC IGBT NPT-VERY HI VOLTAGE IS
Packaging: Tube
Package / Case: ISOPLUS264™
Mounting Type: Through Hole
Input Type: Standard
Supplier Device Package: ISOPLUS264™
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
товар відсутній
IXFA16N50P-TRL
IXFA16N50P-TRL
Виробник: IXYS
Description: MOSFET N-CH 500V 16A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2480 pF @ 25 V
товар відсутній
CLA100E1200KB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA100E1200KB.pdf
Виробник: IXYS
Description: SCR 1.2KV 160A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 11900A
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.37 V
Supplier Device Package: TO-264
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
25+484.32 грн
Мінімальне замовлення: 25
IXTH20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTH20N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
на замовлення 239 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+405.53 грн
30+ 311.44 грн
120+ 278.66 грн
IXYH30N120C4 media?resourcetype=datasheets&itemid=c7f20c7f-04a8-494d-a5d4-ff27e9de9932&filename=littelfuse_discrete_igbts_xpt_ixyh30n120c4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 58 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247 (IXYH)
IGBT Type: PT
Td (on/off) @ 25°C: 18ns/205ns
Switching Energy: 4.8mJ (on), 1.5mJ (off)
Test Condition: 960V, 25A, 5Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 94 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 166 A
Power - Max: 500 W
товар відсутній
CMA60MT1600NHR CMA60MT1600NHR.pdf
Виробник: IXYS
Description: TRIAC 1.6KV 66A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 66 A
Voltage - Off State: 1.6 kV
товар відсутній
IXYA20N120A4HV littelfuse_discrete_igbts_xpt_ixy_20n120a4_datasheet.pdf.pdf
IXYA20N120A4HV
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 54 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/275ns
Switching Energy: 3.6mJ (on), 2.75mJ (off)
Test Condition: 800mV, 20A, 10Ohm, 15V
Gate Charge: 46 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 375 W
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+711.99 грн
50+ 547.3 грн
100+ 489.7 грн
500+ 405.5 грн
IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товар відсутній
DSP25-16AT-TRL L015.pdf
Виробник: IXYS
Description: DIODE ARRAY GP 1600V 25A TO268AA
Packaging: Tape & Reel (TR)
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-268AA
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 25 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
товар відсутній
CME30E1600PZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCME30E1600PZ.pdf
CME30E1600PZ-TUB
Виробник: IXYS
Description: SCR 1.6KV 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 90 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.92 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 1.6 kV
товар відсутній
CMA80MT1600NHR media?resourcetype=datasheets&itemid=11388d72-0f25-488d-93bd-e4a6e9d546e9&filename=littelfuse-power-semiconductors-cma80mt1600nhr-datasheet
Виробник: IXYS
Description: TRIAC 1.6KV 88A ISO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 380A, 410A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Supplier Device Package: ISO247
Current - On State (It (RMS)) (Max): 88 A
Voltage - Off State: 1.6 kV
товар відсутній
IXTA34N65X2-TRL
IXTA34N65X2-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 34A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
товар відсутній
IXTA20N65X-TRL
IXTA20N65X-TRL
Виробник: IXYS
Description: MOSFET N-CH 650V 20A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 10A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
товар відсутній
IXGP48N60B3 media?resourcetype=datasheets&itemid=c729dd1f-0072-44a5-be34-749c6234f065&filename=littelfuse_discrete_igbts_pt_ixg_48n60b3_datasheet.pdf
IXGP48N60B3
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-22
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 22ns/130ns
Switching Energy: 840µJ (on), 660µJ (off)
Test Condition: 480V, 30A, 5Ohm, 15V
Gate Charge: 115 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 280 A
Power - Max: 300 W
товар відсутній
IXXH75N60B3 media?resourcetype=datasheets&itemid=65b0869f-7d80-4345-86e6-e47e8d0b05bf&filename=littelfuse_discrete_igbts_xpt_ixxh75n60b3_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/118ns
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
товар відсутній
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