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IXBOD2-36RD IXYS Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
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DSA10IM100UC-TUB DSA10IM100UC-TUB IXYS Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DPG60IM300PC-TRL DPG60IM300PC-TRL IXYS Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+235.65 грн
Мінімальне замовлення: 800
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DPG60IM300PC-TRL DPG60IM300PC-TRL IXYS Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
1+432.11 грн
10+319.95 грн
100+270.03 грн
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IXYX25N250CV1 IXYX25N250CV1 IXYS littelfuse_discrete_igbts_xpt_ixy_25n250cv1_datasheet.pdf.pdf Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+2201.62 грн
30+1717.90 грн
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IXYX200N65B5 IXYX200N65B5 IXYS Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 470A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 77ns/470ns
Switching Energy: 600µJ (on), 3.4mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 790 nC
Current - Collector (Ic) (Max): 470 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.13 kA
Power - Max: 1.61 kW
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MPA95-06DA MPA95-06DA IXYS mpa95-06da?assetguid=8119a103-e612-4a25-ba8d-46aef97e7685 Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 50 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+2782.61 грн
В кошику  од. на суму  грн.
IXYA55N65B5 IXYA55N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf Description: IGBT TRENCH FS 650V 122A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/200ns
Switching Energy: 550µJ (on), 600µJ (off)
Test Condition: 300V, 25A, 5Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 395 W
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DFE25I600HA IXYS media?resourcetype=datasheets&itemid=4c9232b9-b095-415e-89c9-861c06979a99&filename=littelfuse%2520power%2520semiconductors%2520dfe25i600ha%2520datasheet.pdf Description: DIODE ARRAY GP 600V 25A TO-247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DMA50I1600HA DMA50I1600HA IXYS media?resourcetype=datasheets&itemid=5e17cc20-6050-441a-beee-e25309925071&filename=Littelfuse-Power-Semiconductors-DMA50I1600HA-Datasheet Description: DIODE STANDARD 1600V 50A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W5139TJ480 IXYS littelfusediscretediodesrectifiercapsuletypew5139t450datasheetpdf.pdf Description: DIODE STANDARD 4800V 5139A W89
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 57 µs
Technology: Standard
Current - Average Rectified (Io): 5139A
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
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M0955LC250 IXYS Description: DIODE STANDARD 2500V 955A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 955A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
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IXFH46N65X2W IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+756.40 грн
30+432.36 грн
120+367.44 грн
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IXD2012NTR IXD2012NTR IXYS ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
2500+29.24 грн
5000+27.45 грн
7500+27.09 грн
12500+25.05 грн
17500+24.84 грн
25000+24.63 грн
Мінімальне замовлення: 2500
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IXD2012NTR IXD2012NTR IXYS ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
6+62.46 грн
10+43.01 грн
25+38.79 грн
100+31.97 грн
250+29.86 грн
500+28.58 грн
1000+27.08 грн
Мінімальне замовлення: 6
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VUO35-16NO1 IXYS Description: BRIDGE RECT 3P 1.6KV 35A PWS-A
Packaging: Bulk
Package / Case: PWS-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W2624NC240 IXYS Description: DIODE STANDARD 2400V 2624A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2624A
Supplier Device Package: W5
Voltage - DC Reverse (Vr) (Max): 2400 V
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W2054NC420 IXYS Description: DIODE STANDARD 4200V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W1856NC460 IXYS Description: DIODE STANDARD 4600V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
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W1856NC480 IXYS Description: DIODE STANDARD 4800V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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SJ4008DS2TP SJ4008DS2TP IXYS SJxx08xSx_SJxx08xx_Series.PDF Description: 8 AMP HIGH TEMPERATURE SENSITIVE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 400 V
на замовлення 689 шт:
термін постачання 21-31 дні (днів)
2+211.35 грн
10+131.26 грн
100+89.94 грн
Мінімальне замовлення: 2
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MCMA700P1600NCA MCMA700P1600NCA IXYS Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
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MCMA700PD1600CB MCMA700PD1600CB IXYS media?resourcetype=datasheets&itemid=389EEA50-C86F-4206-B0B2-66DFC83D1711&filename=Littelfuse-Power-Semiconductors-MCMA700PD1600CB-Datasheet Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
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MCMA700P1800CA IXYS Description: SCR MODULE 1.8KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.8 kV
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IXSA80N120L2-7TR IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+467.64 грн
Мінімальне замовлення: 800
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IXSA80N120L2-7TR IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+957.49 грн
10+641.46 грн
100+483.08 грн
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W108CED180 IXYS Description: DIODE STANDARD 1800V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 1800 V
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W108CED220 IXYS Description: DIODE STANDARD 2200V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 2200 V
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IXFP34N65X2W IXYS ixfp34n65x2w-datasheet?assetguid=8ebd969a-8655-472a-a069-4e771b427026 Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+545.91 грн
50+284.06 грн
100+260.72 грн
500+207.73 грн
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IXFH34N65X2W IXFH34N65X2W IXYS ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+627.20 грн
30+352.93 грн
120+297.84 грн
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DPG60IM300PC-TUB DPG60IM300PC-TUB IXYS Description: DIODE STANDARD 300V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 150V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IRFP460 IRFP460 IXYS DS_238_IRFP460.pdf Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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N3565HA160 IXYS Description: SCR 1.6KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.6 kV
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N3565HA180 IXYS Description: SCR 1.8KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.8 kV
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IXSA40N120L2-7TR IXSA40N120L2-7TR IXYS ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0 Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
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IXSA40N120L2-7TR IXSA40N120L2-7TR IXYS ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0 Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
1+596.40 грн
10+391.14 грн
100+304.34 грн
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DSA15IM45UC-TUB DSA15IM45UC-TUB IXYS Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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DSA15IM45UC-TRL DSA15IM45UC-TRL IXYS Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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IXFM1633 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM1766 IXYS Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM35N30 IXYS Description: MOSFET N-CH 300V 35A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N85XHV IXFT30N85XHV IXYS Description: MOSFET N-CH 850V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IXFT6N100F IXFT6N100F IXYS Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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N0910LC200 IXYS Description: SCR 2KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10.1A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2 kV
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DSA15IM200UC-TUB DSA15IM200UC-TUB IXYS Description: DIODE SCHOTTKY 200V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 67pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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W5282ZC240 IXYS Description: DIODE STANDARD 2400V 5282A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5282A
Supplier Device Package: W7
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
Current - Reverse Leakage @ Vr: 100 mA @ 2400 V
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W5282ZC300 IXYS Description: DIODE STANDARD 3000V 5282A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5282A
Supplier Device Package: W7
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3000 V
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IXYN200N65B5 IXYN200N65B5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN200N65B5Datasheet.pdf Description: 650V, 200A, XPT Gen5 B5 IGBT
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1.2 kW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 11700 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
1+2681.64 грн
10+1914.00 грн
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IXSJ25N120R1 IXSJ25N120R1 IXYS power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6 Description: 1200V 62M (25A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 75.3W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.3mA
Supplier Device Package: ISO247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
1+1003.69 грн
30+587.05 грн
120+503.90 грн
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IXFY13N60X3 IXYS Description: DISCRETE MOSFET 13A 600V X3 TO25
Packaging: Tube
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IXFP13N60X3 IXYS Description: DISCRETE MOSFET 13A 600V X3 TO22
Packaging: Tube
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IXFA7N80P-TRL IXFA7N80P-TRL IXYS littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee Description: MOSFET N-CH 800V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IXTA76N25T-TRL IXTA76N25T-TRL IXYS littelfuse-discrete-mosfets-ixt-76n25t-datasheet?assetguid=3c2a340b-21a2-4c11-9adb-97d2bde80f94 Description: MOSFET N-CH 250V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFA10N60P-TRL IXYS Description: MOSFET N-CH 600V 10A D2-PAK
Packaging: Tape & Reel (TR)
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IXFA10N60P-TRL IXYS Description: MOSFET N-CH 600V 10A D2-PAK
Packaging: Cut Tape (CT)
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+376.49 грн
10+241.09 грн
100+172.23 грн
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IXFA36N60X3 IXFA36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61 Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+604.95 грн
50+316.98 грн
100+291.39 грн
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IXFH36N60X3 IXFH36N60X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
1+622.92 грн
30+361.01 грн
120+329.51 грн
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IXFH70N65X3 IXFH70N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b Description: MOSFET 70A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
1+1123.48 грн
30+664.86 грн
120+573.57 грн
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IXFT70N65X3HV IXFT70N65X3HV IXYS Description: MOSFET 70A 650V X3 TO268HV
Packaging: Tube
товару немає в наявності
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IXFH34N65X3 IXFH34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2 Description: MOSFET 34A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+623.78 грн
30+351.04 грн
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IXBOD2-36RD
Виробник: IXYS
Description: POWER DIODE DISCRETES-OTHERS BOD
Packaging: Tube
Package / Case: Radial
Mounting Type: Through Hole
Number of Elements: 1
Voltage - On State: 1.3 V
Supplier Device Package: FP-Case
товару немає в наявності
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DSA10IM100UC-TUB
DSA10IM100UC-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 100V 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 68pF @ 24V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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DPG60IM300PC-TRL
DPG60IM300PC-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+235.65 грн
Мінімальне замовлення: 800
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DPG60IM300PC-TRL
DPG60IM300PC-TRL
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263AA
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
на замовлення 1905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.11 грн
10+319.95 грн
100+270.03 грн
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IXYX25N250CV1 littelfuse_discrete_igbts_xpt_ixy_25n250cv1_datasheet.pdf.pdf
IXYX25N250CV1
Виробник: IXYS
Description: IGBT 2500V 95A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 220 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 15ns/230ns
Switching Energy: 8.3mJ (on), 7.3mJ (off)
Test Condition: 1250V, 25A, 5Ohm, 15V
Gate Charge: 147 nC
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 235 A
Power - Max: 937 W
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2201.62 грн
30+1717.90 грн
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IXYX200N65B5 Littelfuse06282024PPowerSemiconductorDiscreteIGBTIXYX200N65B5Datasheet.pdf
IXYX200N65B5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 470A PLUS247
Packaging: Bulk
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 77ns/470ns
Switching Energy: 600µJ (on), 3.4mJ (off)
Test Condition: 300V, 100A, 1Ohm, 15V
Gate Charge: 790 nC
Current - Collector (Ic) (Max): 470 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1.13 kA
Power - Max: 1.61 kW
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MPA95-06DA mpa95-06da?assetguid=8119a103-e612-4a25-ba8d-46aef97e7685
MPA95-06DA
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.73 V @ 50 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2782.61 грн
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IXYA55N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYA55N65B5Datasheet.pdf
IXYA55N65B5
Виробник: IXYS
Description: IGBT TRENCH FS 650V 122A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 100A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/200ns
Switching Energy: 550µJ (on), 600µJ (off)
Test Condition: 300V, 25A, 5Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 122 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 395 W
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DFE25I600HA media?resourcetype=datasheets&itemid=4c9232b9-b095-415e-89c9-861c06979a99&filename=littelfuse%2520power%2520semiconductors%2520dfe25i600ha%2520datasheet.pdf
Виробник: IXYS
Description: DIODE ARRAY GP 600V 25A TO-247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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DMA50I1600HA media?resourcetype=datasheets&itemid=5e17cc20-6050-441a-beee-e25309925071&filename=Littelfuse-Power-Semiconductors-DMA50I1600HA-Datasheet
DMA50I1600HA
Виробник: IXYS
Description: DIODE STANDARD 1600V 50A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 19pF @ 400V, 1MHz
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 50 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W5139TJ480 littelfusediscretediodesrectifiercapsuletypew5139t450datasheetpdf.pdf
Виробник: IXYS
Description: DIODE STANDARD 4800V 5139A W89
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 57 µs
Technology: Standard
Current - Average Rectified (Io): 5139A
Supplier Device Package: W89
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3000 A
Current - Reverse Leakage @ Vr: 100 mA @ 4800 V
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M0955LC250
Виробник: IXYS
Description: DIODE STANDARD 2500V 955A W4
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.4 µs
Technology: Standard
Current - Average Rectified (Io): 955A
Supplier Device Package: W4
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 2500 V
Voltage - Forward (Vf) (Max) @ If: 2.07 V @ 1900 A
Current - Reverse Leakage @ Vr: 50 mA @ 2500 V
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IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
IXFH46N65X2W
Виробник: IXYS
Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+756.40 грн
30+432.36 грн
120+367.44 грн
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IXD2012NTR ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b
IXD2012NTR
Виробник: IXYS
Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.24 грн
5000+27.45 грн
7500+27.09 грн
12500+25.05 грн
17500+24.84 грн
25000+24.63 грн
Мінімальне замовлення: 2500
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IXD2012NTR ixd2012n-data-sheet?assetguid=c97f5428-6f19-4399-b112-7bd50275dd2b
IXD2012NTR
Виробник: IXYS
Description: Half-Bridge Driver 200V 1.4A SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 30ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.46 грн
10+43.01 грн
25+38.79 грн
100+31.97 грн
250+29.86 грн
500+28.58 грн
1000+27.08 грн
Мінімальне замовлення: 6
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VUO35-16NO1
Виробник: IXYS
Description: BRIDGE RECT 3P 1.6KV 35A PWS-A
Packaging: Bulk
Package / Case: PWS-A
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PWS-A
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
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W2624NC240
Виробник: IXYS
Description: DIODE STANDARD 2400V 2624A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2624A
Supplier Device Package: W5
Voltage - DC Reverse (Vr) (Max): 2400 V
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W2054NC420
Виробник: IXYS
Description: DIODE STANDARD 4200V 2055A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 2055A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W1856NC460
Виробник: IXYS
Description: DIODE STANDARD 4600V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4600 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4600 V
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W1856NC480
Виробник: IXYS
Description: DIODE STANDARD 4800V 1856A W5
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 36 µs
Technology: Standard
Current - Average Rectified (Io): 1856A
Supplier Device Package: W5
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4800 V
Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 5550 A
Current - Reverse Leakage @ Vr: 50 mA @ 4800 V
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SJ4008DS2TP SJxx08xSx_SJxx08xx_Series.PDF
SJ4008DS2TP
Виробник: IXYS
Description: 8 AMP HIGH TEMPERATURE SENSITIVE
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
Current - On State (It (AV)) (Max): 5.1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-252AA
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 400 V
на замовлення 689 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+211.35 грн
10+131.26 грн
100+89.94 грн
Мінімальне замовлення: 2
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MCMA700P1600NCA
MCMA700P1600NCA
Виробник: IXYS
Description: SCR MODULE 1.6KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.6 kV
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MCMA700PD1600CB media?resourcetype=datasheets&itemid=389EEA50-C86F-4206-B0B2-66DFC83D1711&filename=Littelfuse-Power-Semiconductors-MCMA700PD1600CB-Datasheet
MCMA700PD1600CB
Виробник: IXYS
Description: SCR MODULE 1.6KV 1200A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1200 A
Voltage - Off State: 1.6 kV
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MCMA700P1800CA
Виробник: IXYS
Description: SCR MODULE 1.8KV 1100A COMPACK
Packaging: Box
Package / Case: ComPack
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 19000A, 20500A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 1100 A
Voltage - Off State: 1.8 kV
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IXSA80N120L2-7TR ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b
Виробник: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+467.64 грн
Мінімальне замовлення: 800
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IXSA80N120L2-7TR ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b
Виробник: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+957.49 грн
10+641.46 грн
100+483.08 грн
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W108CED180
Виробник: IXYS
Description: DIODE STANDARD 1800V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 1800 V
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W108CED220
Виробник: IXYS
Description: DIODE STANDARD 2200V 10815A W112
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10815A
Supplier Device Package: W112
Voltage - DC Reverse (Vr) (Max): 2200 V
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IXFP34N65X2W ixfp34n65x2w-datasheet?assetguid=8ebd969a-8655-472a-a069-4e771b427026
Виробник: IXYS
Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3 (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+545.91 грн
50+284.06 грн
100+260.72 грн
500+207.73 грн
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IXFH34N65X2W ixfh34n65x2w-datasheet?assetguid=e83b9dc5-823b-41b2-9833-15806c11776b
IXFH34N65X2W
Виробник: IXYS
Description: 650V 100m 34A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+627.20 грн
30+352.93 грн
120+297.84 грн
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DPG60IM300PC-TUB
DPG60IM300PC-TUB
Виробник: IXYS
Description: DIODE STANDARD 300V 60A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 150V, 1MHz
Current - Average Rectified (Io): 60A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.43 V @ 60 A
Current - Reverse Leakage @ Vr: 1 µA @ 300 V
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IRFP460 DS_238_IRFP460.pdf
IRFP460
Виробник: IXYS
Description: MOSFET N-CH 500V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 260W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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N3565HA160
Виробник: IXYS
Description: SCR 1.6KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.6 kV
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N3565HA180
Виробник: IXYS
Description: SCR 1.8KV 7050A W79
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3565 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W79
Current - On State (It (RMS)) (Max): 7050 A
Voltage - Off State: 1.8 kV
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IXSA40N120L2-7TR ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0
IXSA40N120L2-7TR
Виробник: IXYS
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
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IXSA40N120L2-7TR ixsa40n120l2-7-datasheet?assetguid=91c535e6-431a-48bd-bac5-7f59dc11aae0
IXSA40N120L2-7TR
Виробник: IXYS
Description: 1200V 80m (40A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+596.40 грн
10+391.14 грн
100+304.34 грн
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DSA15IM45UC-TUB
DSA15IM45UC-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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DSA15IM45UC-TRL
DSA15IM45UC-TRL
Виробник: IXYS
Description: DIODE SCHOTTKY 45V 15A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 227pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 45 V
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IXFM1633
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM1766
Виробник: IXYS
Description: POWER MOSFET TO-3
Packaging: Tube
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IXFM35N30
Виробник: IXYS
Description: MOSFET N-CH 300V 35A TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: TO-204AE
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXFT30N85XHV
IXFT30N85XHV
Виробник: IXYS
Description: MOSFET N-CH 850V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 695W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2460 pF @ 25 V
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IXFT6N100F
IXFT6N100F
Виробник: IXYS
Description: MOSFET N-CH 1000V 6A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-268
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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N0910LC200
Виробник: IXYS
Description: SCR 2KV 1788A W10
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10.1A @ 50Hz
Current - On State (It (AV)) (Max): 910 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.07 V
Current - Off State (Max): 60 mA
Supplier Device Package: W10
Current - On State (It (RMS)) (Max): 1788 A
Voltage - Off State: 2 kV
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DSA15IM200UC-TUB
DSA15IM200UC-TUB
Виробник: IXYS
Description: DIODE SCHOTTKY 200V 15A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 67pF @ 24V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
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W5282ZC240
Виробник: IXYS
Description: DIODE STANDARD 2400V 5282A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5282A
Supplier Device Package: W7
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
Current - Reverse Leakage @ Vr: 100 mA @ 2400 V
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W5282ZC300
Виробник: IXYS
Description: DIODE STANDARD 3000V 5282A W7
Packaging: Box
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5282A
Supplier Device Package: W7
Operating Temperature - Junction: -55°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 3000 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6000 A
Current - Reverse Leakage @ Vr: 100 mA @ 3000 V
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IXYN200N65B5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYN200N65B5Datasheet.pdf
IXYN200N65B5
Виробник: IXYS
Description: 650V, 200A, XPT Gen5 B5 IGBT
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Current - Collector (Ic) (Max): 390 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 1.2 kW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 11700 pF @ 25 V
на замовлення 99 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2681.64 грн
10+1914.00 грн
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IXSJ25N120R1 power-semiconductor-sic-mosfet-ixsj25n120r1-datasheet?assetguid=41aa58a1-83ff-4308-9387-9a356004e0b6
IXSJ25N120R1
Виробник: IXYS
Description: 1200V 62M (25A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 75.3W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.3mA
Supplier Device Package: ISO247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1003.69 грн
30+587.05 грн
120+503.90 грн
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IXFY13N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 13A 600V X3 TO25
Packaging: Tube
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IXFP13N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 13A 600V X3 TO22
Packaging: Tube
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IXFA7N80P-TRL littelfuse-discrete-mosfets-ixf-7n80p-datasheet?assetguid=b00d4e8d-827b-4a04-b106-292ed53206ee
IXFA7N80P-TRL
Виробник: IXYS
Description: MOSFET N-CH 800V 7A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
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IXTA76N25T-TRL littelfuse-discrete-mosfets-ixt-76n25t-datasheet?assetguid=3c2a340b-21a2-4c11-9adb-97d2bde80f94
IXTA76N25T-TRL
Виробник: IXYS
Description: MOSFET N-CH 250V 76A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 38A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXFA10N60P-TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 10A D2-PAK
Packaging: Tape & Reel (TR)
товару немає в наявності
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IXFA10N60P-TRL
Виробник: IXYS
Description: MOSFET N-CH 600V 10A D2-PAK
Packaging: Cut Tape (CT)
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+376.49 грн
10+241.09 грн
100+172.23 грн
В кошику  од. на суму  грн.
IXFA36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61
IXFA36N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+604.95 грн
50+316.98 грн
100+291.39 грн
В кошику  од. на суму  грн.
IXFH36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e
IXFH36N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+622.92 грн
30+361.01 грн
120+329.51 грн
В кошику  од. на суму  грн.
IXFH70N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh70n65x3-datasheet?assetguid=b5819e4b-925f-4a8e-b528-ff8e8c93904b
IXFH70N65X3
Виробник: IXYS
Description: MOSFET 70A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 35A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1123.48 грн
30+664.86 грн
120+573.57 грн
В кошику  од. на суму  грн.
IXFT70N65X3HV
IXFT70N65X3HV
Виробник: IXYS
Description: MOSFET 70A 650V X3 TO268HV
Packaging: Tube
товару немає в наявності
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IXFH34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh34n65x3-datasheet?assetguid=965e45cd-8715-4cf1-b85d-adaafdfc5ec2
IXFH34N65X3
Виробник: IXYS
Description: MOSFET 34A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2025 pF @ 25 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+623.78 грн
30+351.04 грн
В кошику  од. на суму  грн.
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