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N2543ZD240 IXYS Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
товар відсутній
IXXX200N60B3 IXYS littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
товар відсутній
IXTA75N10P-TRL IXTA75N10P-TRL IXYS Description: MOSFET N-CH 100V 75A TO263
товар відсутній
IXYT85N120A4HV IXYT85N120A4HV IXYS littelfuse_discrete_igbts_xpt_ixyt85n120a4hv_datasheet.pdf.pdf Description: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
1+1289.09 грн
30+ 1004.99 грн
120+ 945.86 грн
LSIC2SD120N120PA LSIC2SD120N120PA IXYS Description: DIODE MOD SIC SCHOT 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEC29-02AS-TUB DSEC29-02AS-TUB IXYS DSEC29-02AS.pdf Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
CLB30I1200HB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf Description: SCR 1.2KV 47A TO247
товар відсутній
IXTA86N20X4 IXTA86N20X4 IXYS IXTA86N20X4_DS.pdf Description: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 4649 шт:
термін постачання 21-31 дні (днів)
1+758.29 грн
50+ 590.99 грн
100+ 556.23 грн
500+ 473.07 грн
1000+ 433.92 грн
IXTA52P10P-TRL IXTA52P10P-TRL IXYS littelfuse_discrete_mosfets_p-channel_ixt_52p10p_datasheet.pdf.pdf Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+278.28 грн
1600+ 241.18 грн
Мінімальне замовлення: 800
IXGT6N170-TRL IXYS Description: IXGT6N170 TRL
товар відсутній
IXGT6N170AHV-TRL IXYS Description: IXGT6N170AHV TRL
товар відсутній
IXGT6N170A-TRL IXYS Description: IXGT6N170A TRL
товар відсутній
IXFA44N25X3 IXFA44N25X3 IXYS media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+264.25 грн
Мінімальне замовлення: 300
IXFP44N25X3 IXFP44N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
300+315.57 грн
Мінімальне замовлення: 300
IXTH44N25L2 IXYS media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
товар відсутній
R1158NC26P IXYS Description: SCR 2.6KV 2328A W11
товар відсутній
CLA100E1200TZ-TUB CLA100E1200TZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA100E1200TZ.pdf Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
1+548.85 грн
30+ 422.24 грн
120+ 377.79 грн
IXGK120N60B3 IXYS media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
LSIC2SD120N80PA LSIC2SD120N80PA IXYS littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
IXFK14N100Q IXYS Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
DSEK300-06A IXYS Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
N2055MC260 IXYS media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товар відсутній
N2055MC280 IXYS media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товар відсутній
IXFN130N90SK IXFN130N90SK IXYS Description: SICARBIDE-DISCRETE MOSFET SOT-22
товар відсутній
IXFP18N65X2 IXFP18N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)
1+335.09 грн
50+ 255.51 грн
100+ 219.01 грн
500+ 182.7 грн
1000+ 156.44 грн
IXTP86N20X4 IXTP86N20X4 IXYS IXTP86N20X4_DS.pdf Description: MOSFET 200V 86A N-CH ULTRA TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 17088 шт:
термін постачання 21-31 дні (днів)
1+758.29 грн
50+ 590.99 грн
100+ 556.23 грн
500+ 473.07 грн
1000+ 433.92 грн
M1494NK250 IXYS Description: FAST DIODE
товар відсутній
DSEP30-12B DSEP30-12B IXYS Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
1+499.02 грн
10+ 434.16 грн
100+ 359.43 грн
MCB60I1200TZ IXYS MCB60I1200TZ.pdf Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товар відсутній
IXTA12N50P IXTA12N50P IXYS DS99322F(IXTA-TI-TP12N50P).pdf Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
2+257.82 грн
50+ 196.72 грн
100+ 168.62 грн
500+ 140.66 грн
Мінімальне замовлення: 2
N1366JK120 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товар відсутній
N1366JK140 IXYS media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFQ60N25X3 IXFQ60N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
1+608.07 грн
10+ 501.82 грн
100+ 418.2 грн
500+ 346.29 грн
1000+ 311.66 грн
IXGM20N60 IXYS Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A IXYS littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXTH220N20X4 IXTH220N20X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth220n20x4_datasheet.pdf.pdf Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
IXTT220N20X4HV IXTT220N20X4HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtt220n20x4hv_datasheet.pdf.pdf Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
IXTY1N120PTRL IXYS Description: MOSFET N-CH 1200V 1A TO252
товар відсутній
IXTA1N120P-TRL IXTA1N120P-TRL IXYS Description: MOSFET N-CH 1200V 1A TO263
товар відсутній
DSP45-12AZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
IXTA94N20X4 IXTA94N20X4 IXYS IXTA94N20X4_DS.pdf Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
1+577.74 грн
50+ 466.11 грн
IXTA100N15X4 IXTA100N15X4 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_100n15x4_datasheet.pdf.pdf Description: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+670.18 грн
50+ 515.01 грн
100+ 460.8 грн
500+ 381.56 грн
1000+ 343.41 грн
CLA30E1200PB CLA30E1200PB IXYS CLA30E1200PB.pdf Description: SCR 1.2KV 47A TO220AB
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
MEK95-06DA MEK95-06DA IXYS MEA95-06DA_MEK95-06DA_MEE95-06DA.pdf Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+2209.14 грн
10+ 1962.16 грн
100+ 1675.57 грн
N1159NC380 IXYS Description: SCR 3.8KV 2268A W11
товар відсутній
N1159NC420 IXYS Description: SCR 4.2KV 2268A W11
товар відсутній
MEA75-12DA MEA75-12DA IXYS L343.pdf Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+2308.8 грн
10+ 1975.65 грн
IXFT60N60X3HV IXFT60N60X3HV IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft60n60x3hv_datasheet.pdf.pdf Description: MOSFET ULTRA 600V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IXFH60N60X3 IXFH60N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+812.45 грн
MEK150-04DA MEK150-04DA IXYS MEK150-04DA.pdf Description: DIODE MODULE 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
1+3106.81 грн
10+ 2791.18 грн
MDD44-16N1B MDD44-16N1B IXYS MDD44-16N1B.pdf Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
1+1920.99 грн
36+ 1533.91 грн
IXFH48N60X3 IXFH48N60X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf Description: MOSFET ULTRA JCT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
1+688.96 грн
30+ 529.83 грн
120+ 474.06 грн
IXTH94N20X4 IXTH94N20X4 IXYS media?resourcetype=datasheets&itemid=33bf70d9-5ba2-41c1-a10d-6826f12c0832&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
1+785.01 грн
30+ 611.89 грн
120+ 575.9 грн
MDMA660U1600PTEH IXYS media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA660U1600PT-PC IXYS Description: MDMA660U1600PTEH-PC
Packaging: Box
товар відсутній
MDMA900U1600PTEH MDMA900U1600PTEH IXYS MDMA900U1600PTEH.pdf Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA900U1600PT-PC IXYS Description: MDMA900U1600PTEH-PC
товар відсутній
VVZ24-12IO1 IXYS Description: BRIDGE RECT 3 PHASE 1200V 27A
товар відсутній
DMA40U1800GU DMA40U1800GU IXYS Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 2374 шт:
термін постачання 21-31 дні (днів)
1+1367.8 грн
10+ 1170.97 грн
100+ 1024.13 грн
500+ 820.14 грн
DMA90U1800LB-TUB IXYS DMA90U1800LB.pdf Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
товар відсутній
N2543ZD240
Виробник: IXYS
Description: SCR 2.4KV W46
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Current - Non Rep. Surge 50, 60Hz (Itsm): 32000A @ 50Hz
Current - On State (It (AV)) (Max): 2543 A
Supplier Device Package: W46
Voltage - Off State: 2.4 kV
товар відсутній
IXXX200N60B3 littelfuse_discrete_igbts_xpt_ixx_200n60b3_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 48ns/160ns
Switching Energy: 2.85mJ (on), 4.4mJ (off)
Test Condition: 360V, 100A, 1Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 380 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 900 A
Power - Max: 1630 W
товар відсутній
IXTA75N10P-TRL
IXTA75N10P-TRL
Виробник: IXYS
Description: MOSFET N-CH 100V 75A TO263
товар відсутній
IXYT85N120A4HV littelfuse_discrete_igbts_xpt_ixyt85n120a4hv_datasheet.pdf.pdf
IXYT85N120A4HV
Виробник: IXYS
Description: IGBT PT 1200V 300A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 85A
Supplier Device Package: TO-268HV (IXYT)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/400ns
Switching Energy: 4.9mJ (on), 8.3mJ (off)
Test Condition: 600V, 60A, 5Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 520 A
Power - Max: 1150 W
на замовлення 290 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1289.09 грн
30+ 1004.99 грн
120+ 945.86 грн
LSIC2SD120N120PA
LSIC2SD120N120PA
Виробник: IXYS
Description: DIODE MOD SIC SCHOT 1200V 120A
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A (DC)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
DSEC29-02AS-TUB DSEC29-02AS.pdf
DSEC29-02AS-TUB
Виробник: IXYS
Description: DIODE ARRAY GP 200V 15A TO263
товар відсутній
CLB30I1200HB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLB30I1200HB.pdf
Виробник: IXYS
Description: SCR 1.2KV 47A TO247
товар відсутній
IXTA86N20X4 IXTA86N20X4_DS.pdf
IXTA86N20X4
Виробник: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 4649 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+758.29 грн
50+ 590.99 грн
100+ 556.23 грн
500+ 473.07 грн
1000+ 433.92 грн
IXTA52P10P-TRL littelfuse_discrete_mosfets_p-channel_ixt_52p10p_datasheet.pdf.pdf
IXTA52P10P-TRL
Виробник: IXYS
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
800+278.28 грн
1600+ 241.18 грн
Мінімальне замовлення: 800
IXGT6N170-TRL
Виробник: IXYS
Description: IXGT6N170 TRL
товар відсутній
IXGT6N170AHV-TRL
Виробник: IXYS
Description: IXGT6N170AHV TRL
товар відсутній
IXGT6N170A-TRL
Виробник: IXYS
Description: IXGT6N170A TRL
товар відсутній
IXFA44N25X3 media?resourcetype=datasheets&itemid=d4d53a59-e025-4cd0-9ea6-9898c3e6cbeb&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf
IXFA44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+264.25 грн
Мінімальне замовлення: 300
IXFP44N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_44n25x3_datasheet.pdf.pdf
IXFP44N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 22A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
300+315.57 грн
Мінімальне замовлення: 300
IXTH44N25L2 media?resourcetype=datasheets&itemid=04e8b47d-2398-4a0b-bd4f-d92d25c9b38c&filename=littelfuse_discrete_mosfets_n-channel_linear_ixt_44n25l2_datasheet.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 22A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5740 pF @ 25 V
товар відсутній
R1158NC26P
Виробник: IXYS
Description: SCR 2.6KV 2328A W11
товар відсутній
CLA100E1200TZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA100E1200TZ.pdf
CLA100E1200TZ-TUB
Виробник: IXYS
Description: THYRISTOR SCR 1200V 100A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - On State (It (AV)) (Max): 100 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Active
Current - On State (It (RMS)) (Max): 160 A
Voltage - Off State: 1.2 kV
на замовлення 137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+548.85 грн
30+ 422.24 грн
120+ 377.79 грн
IXGK120N60B3 media?resourcetype=datasheets&itemid=360c665e-d7b3-4ccb-ba05-1f3b3a839463&filename=littelfuse_discrete_igbts_pt_ixg_120n60b3_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-26
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A
Supplier Device Package: TO-264 (IXGK)
IGBT Type: PT
Td (on/off) @ 25°C: 40ns/227ns
Switching Energy: 2.9mJ (on), 3.5mJ (off)
Test Condition: 480V, 100A, 2Ohm, 15V
Gate Charge: 465 nC
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 780 W
товар відсутній
LSIC2SD120N80PA littelfuse_power_semiconductor_silicon_carbide_lsic2sd120n80pa_datasheet.pdf.pdf
LSIC2SD120N80PA
Виробник: IXYS
Description: DIODE MOD SIC 1200V 75A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A (DC)
Supplier Device Package: SOT-227B - miniBLOC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
товар відсутній
IXFK14N100Q
Виробник: IXYS
Description: MOSFET N-CH 1000V 14A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 7A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
товар відсутній
DSEK300-06A
Виробник: IXYS
Description: PWR DIODE DISC-FRED SOT-227UI(MI
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 150 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
товар відсутній
N2055MC260 media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2.6KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.6 kV
товар відсутній
N2055MC280 media?resourcetype=datasheets&amp;itemid=fda481e7-5d5c-44da-9b7c-2ebd5f7c498a&amp;filename=littelfuse_discrete_thyristors_phase_control_n2055mc2_0_datasheet.pdf
Виробник: IXYS
Description: SCR 2.8KV 4135A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Clamp On
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 28400A @ 50Hz
Current - On State (It (AV)) (Max): 2105 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.47 V
Current - Off State (Max): 120 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 4135 A
Voltage - Off State: 2.8 kV
товар відсутній
IXFN130N90SK
IXFN130N90SK
Виробник: IXYS
Description: SICARBIDE-DISCRETE MOSFET SOT-22
товар відсутній
IXFP18N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_18n65x2_datasheet.pdf.pdf
IXFP18N65X2
Виробник: IXYS
Description: MOSFET N-CH 650V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
на замовлення 1298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+335.09 грн
50+ 255.51 грн
100+ 219.01 грн
500+ 182.7 грн
1000+ 156.44 грн
IXTP86N20X4 IXTP86N20X4_DS.pdf
IXTP86N20X4
Виробник: IXYS
Description: MOSFET 200V 86A N-CH ULTRA TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 17088 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+758.29 грн
50+ 590.99 грн
100+ 556.23 грн
500+ 473.07 грн
1000+ 433.92 грн
M1494NK250
Виробник: IXYS
Description: FAST DIODE
товар відсутній
DSEP30-12B
DSEP30-12B
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.75 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 465 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+499.02 грн
10+ 434.16 грн
100+ 359.43 грн
MCB60I1200TZ MCB60I1200TZ.pdf
Виробник: IXYS
Description: 1200V 90A SIC POWER MOSFET
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-268AA (D3Pak-HV)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
товар відсутній
IXTA12N50P DS99322F(IXTA-TI-TP12N50P).pdf
IXTA12N50P
Виробник: IXYS
Description: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
на замовлення 524 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
2+257.82 грн
50+ 196.72 грн
100+ 168.62 грн
500+ 140.66 грн
Мінімальне замовлення: 2
N1366JK120 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.2KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.2 kV
товар відсутній
N1366JK140 media?resourcetype=datasheets&amp;itemid=a60a062e-c0d3-4818-9ac1-fb4b6acd14fd&amp;filename=littelfuse_discrete_thyristors_phase_control_n1366jk__0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.4KV 2718A WP1
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17500A @ 50Hz
Current - On State (It (AV)) (Max): 1366 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.99 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP1
Current - On State (It (RMS)) (Max): 2718 A
Voltage - Off State: 1.4 kV
товар відсутній
IXFQ60N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_60n25x3_datasheet.pdf.pdf
IXFQ60N25X3
Виробник: IXYS
Description: MOSFET N-CHANNEL 250V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
на замовлення 1713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+608.07 грн
10+ 501.82 грн
100+ 418.2 грн
500+ 346.29 грн
1000+ 311.66 грн
IXGM20N60
Виробник: IXYS
Description: IGBT 600V 40A TO-204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/600ns
Switching Energy: 2mJ (on), 3.2mJ (off)
Test Condition: 480V, 20A, 82Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 150 W
товар відсутній
IXGM25N100A littelfuse_discrete_igbts_pt_ixgm25n100a_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT 1000V 50A 200W TO204AE
Packaging: Tube
Package / Case: TO-204AE
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-204AE
Td (on/off) @ 25°C: 100ns/500ns
Switching Energy: 5mJ (off)
Test Condition: 800V, 25A, 33Ohm, 15V
Gate Charge: 180 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
товар відсутній
IXTH220N20X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth220n20x4_datasheet.pdf.pdf
IXTH220N20X4
Виробник: IXYS
Description: MOSFET N-CH 200V 220A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
IXTT220N20X4HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtt220n20x4hv_datasheet.pdf.pdf
IXTT220N20X4HV
Виробник: IXYS
Description: MOSFET N-CH 200V 220A X4 TO268HV
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 110A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268HV (IXTT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V
товар відсутній
IXTY1N120PTRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO252
товар відсутній
IXTA1N120P-TRL
IXTA1N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 1A TO263
товар відсутній
DSP45-12AZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fDSP45-12AZ.pdf
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 45A TO268AA
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 18pF @ 400V, 1MHz
Current - Average Rectified (Io): 45A
Supplier Device Package: TO-268AA (D3Pak-HV)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 45 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товар відсутній
IXTA94N20X4 IXTA94N20X4_DS.pdf
IXTA94N20X4
Виробник: IXYS
Description: MOSFET 200V 94A N-CH ULTRA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 1152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+577.74 грн
50+ 466.11 грн
IXTA100N15X4 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_100n15x4_datasheet.pdf.pdf
IXTA100N15X4
Виробник: IXYS
Description: MOSFET N-CH 150V 100A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 50A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+670.18 грн
50+ 515.01 грн
100+ 460.8 грн
500+ 381.56 грн
1000+ 343.41 грн
CLA30E1200PB CLA30E1200PB.pdf
CLA30E1200PB
Виробник: IXYS
Description: SCR 1.2KV 47A TO220AB
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
MEK95-06DA MEA95-06DA_MEK95-06DA_MEE95-06DA.pdf
MEK95-06DA
Виробник: IXYS
Description: DIODE MODULE GP 600V 95A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2209.14 грн
10+ 1962.16 грн
100+ 1675.57 грн
N1159NC380
Виробник: IXYS
Description: SCR 3.8KV 2268A W11
товар відсутній
N1159NC420
Виробник: IXYS
Description: SCR 4.2KV 2268A W11
товар відсутній
MEA75-12DA L343.pdf
MEA75-12DA
Виробник: IXYS
Description: DIODE MOD GP 1.2KV 75A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.17 V @ 100 A
Current - Reverse Leakage @ Vr: 2 mA @ 1200 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+2308.8 грн
10+ 1975.65 грн
IXFT60N60X3HV littelfuse_discrete_mosfets_n-channel_ultra_junction_ixft60n60x3hv_datasheet.pdf.pdf
IXFT60N60X3HV
Виробник: IXYS
Description: MOSFET ULTRA 600V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
товар відсутній
IXFH60N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh60n60x3_datasheet.pdf.pdf
IXFH60N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+812.45 грн
MEK150-04DA MEK150-04DA.pdf
MEK150-04DA
Виробник: IXYS
Description: DIODE MODULE 400V 150A TO240AA
Packaging: Bulk
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 150A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 14 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+3106.81 грн
10+ 2791.18 грн
MDD44-16N1B MDD44-16N1B.pdf
MDD44-16N1B
Виробник: IXYS
Description: DIODE MOD GP 1.6KV 64A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 64A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1920.99 грн
36+ 1533.91 грн
IXFH48N60X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh48n60x3_datasheet.pdf.pdf
IXFH48N60X3
Виробник: IXYS
Description: MOSFET ULTRA JCT 600V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
на замовлення 135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+688.96 грн
30+ 529.83 грн
120+ 474.06 грн
IXTH94N20X4 media?resourcetype=datasheets&itemid=33bf70d9-5ba2-41c1-a10d-6826f12c0832&filename=littelfuse_discrete_mosfets_n-channel_ultra_junction_ixth94n20x4_datasheet.pdf
IXTH94N20X4
Виробник: IXYS
Description: MOSFET N-CH 200V 94A X4 TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 47A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISO TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
на замовлення 320 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+785.01 грн
30+ 611.89 грн
120+ 575.9 грн
MDMA660U1600PTEH media?resourcetype=datasheets&itemid=6121d227-b8cc-43e1-b8e1-5fab292cc1a4&filename=littelfuse%2520power%2520semiconductors%2520mdma660u1600pteh%2520datasheet.pdf
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 660 A
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 660 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA660U1600PT-PC
Виробник: IXYS
Description: MDMA660U1600PTEH-PC
Packaging: Box
товар відсутній
MDMA900U1600PTEH MDMA900U1600PTEH.pdf
MDMA900U1600PTEH
Виробник: IXYS
Description: BIPOLARMODULE-BRIDGE RECTIFIER E
Packaging: Box
Package / Case: E3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 900 A
Voltage - Forward (Vf) (Max) @ If: 1.92 V @ 900 A
Current - Reverse Leakage @ Vr: 200 µA @ 1600 V
товар відсутній
MDMA900U1600PT-PC
Виробник: IXYS
Description: MDMA900U1600PTEH-PC
товар відсутній
VVZ24-12IO1
Виробник: IXYS
Description: BRIDGE RECT 3 PHASE 1200V 27A
товар відсутній
DMA40U1800GU
DMA40U1800GU
Виробник: IXYS
Description: POWER DIODE DISCRETES-RECTIFIER
Packaging: Tube
Package / Case: 5-SIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: GUFP
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
на замовлення 2374 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1+1367.8 грн
10+ 1170.97 грн
100+ 1024.13 грн
500+ 820.14 грн
DMA90U1800LB-TUB DMA90U1800LB.pdf
Виробник: IXYS
Description: BRIDGE RECT 1P 1.8KV 90A SMPD.B
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Diode Type: Three Phase
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: Standard
Supplier Device Package: ISOPLUS-SMPD™.B
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 90 A
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1800 V
товар відсутній
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