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W3082MC420 IXYS media?resourcetype=datasheets&itemid=05e7f4a2-f30d-4d21-ba39-877b28451567&filename=littelfuse_discrete_diodes_rectifier_w3082mc4_0_datasheet.pdf Description: DIODE GEN PURP 4.2KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W3082MC450 IXYS media?resourcetype=datasheets&itemid=05e7f4a2-f30d-4d21-ba39-877b28451567&filename=littelfuse_discrete_diodes_rectifier_w3082mc4_0_datasheet.pdf Description: DIODE GEN PURP 4.5KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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IXGA12N120A3-TRL IXGA12N120A3-TRL IXYS Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXXH140N65B4 IXYS media?resourcetype=datasheets&itemid=ee77c7a1-ef04-4808-a4a8-2d44c90c6683&filename=littelfuse_discrete_igbts_xpt_ixxh140n65b4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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IXXH140N65C4 IXYS media?resourcetype=datasheets&itemid=1337f9d6-e395-4c14-b9ae-2e1a8fdfb915&filename=littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
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IXXX140N65B4H1 IXYS littelfuse_discrete_igbts_xpt_ixxx140n65b4h1_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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N3229QK040 IXYS media?resourcetype=datasheets&amp;itemid=2c25cda7-c378-4178-9d52-fca724bcee0c&amp;filename=littelfuse_discrete_thyristors_phase_control_n3229qk0_0_datasheet.pdf Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
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IXTY2P50PA IXYS media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
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DFE250X600NA DFE250X600NA IXYS Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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DHG100X650NA DHG100X650NA IXYS Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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MTC120W55GC-SMD IXYS MTC120W55GC_tent.pdf Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
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W4693QK050 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
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W4693QK080 IXYS media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
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MCMA160P1600YA MCMA160P1600YA IXYS media?resourcetype=datasheets&itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+5253.17 грн
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MCMA160P1800YA-MI IXYS media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
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DSSK10-018A DSSK10-018A IXYS DSSK10-018A.pdf Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
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CMA80E1400HB IXYS Description: THYRISTOR - TO247
Packaging: Tube
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MTC120WX55GD-SMD IXYS MTC120WX55GD_tent.pdf Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
13+2103.54 грн
Мінімальне замовлення: 13
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IRFP470 IRFP470 IXYS IRFP470.pdf Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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DGSK20-025AS-TUB DGSK20-025AS-TUB IXYS DGS,DGSK 9, 10, 20-025A,AS.pdf Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
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IXYH40N120B4H1 IXYH40N120B4H1 IXYS PdfFile_145990.pdf Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+894.75 грн
30+520.49 грн
120+445.71 грн
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MDD810-12N2 IXYS media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
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IXFN140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
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IXYN110N120C4H1 IXYN110N120C4H1 IXYS ixyn110n120c4h1-datasheet.pdf Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
1+3150.58 грн
10+2275.66 грн
100+2096.24 грн
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IXYN110N120B4H1 IXYN110N120B4H1 IXYS Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
1+2598.57 грн
10+2150.22 грн
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IXYK85N120C4H1 IXYK85N120C4H1 IXYS ixyk85n120c4h1-datasheet?assetguid=b555c4ac-c9da-4e14-893d-e9719a49568a Description: IGBT TRENCH 1200V 220A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
1+1745.01 грн
25+1097.12 грн
100+1006.95 грн
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IXYN85N120C4H1 IXYN85N120C4H1 IXYS ixyn85n120c4h1-datasheet?assetguid=930f3d26-e1b3-4dd7-9c5a-00ba209dd8d1 Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+2427.20 грн
10+1729.34 грн
100+1525.87 грн
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MXB12R600DPHFC MXB12R600DPHFC IXYS Power%20Semiconductor%20Selection%20Guide.pdf Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
1+922.76 грн
10+786.00 грн
100+608.89 грн
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MCNA40P2200TA MCNA40P2200TA IXYS media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
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MCNA55P2200TA MCNA55P2200TA IXYS media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
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MCNA75P2200TA MCNA75P2200TA IXYS media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
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MCNA95P2200TA MCNA95P2200TA IXYS media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
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IXFR140N60X3 IXYS Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
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IXTA230N04T4 IXTA230N04T4 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n04t4_datasheet.pdf.pdf Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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MDD56-14N1B MDD56-14N1B IXYS media?resourcetype=datasheets&itemid=EFA63FC9-9031-452B-972F-39004ADFE8BA&filename=Littelfuse-Power-Semiconductors-MDD56-14N1B-Datasheet Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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MDD56-08N1B MDD56-08N1B IXYS MDD56-08N1B.pdf Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+2091.05 грн
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IXTA140N12T2 IXTA140N12T2 IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
50+396.16 грн
Мінімальне замовлення: 50
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IXYT12N250CV1HV IXYT12N250CV1HV IXYS media?resourcetype=datasheets&itemid=13066e92-8f65-4aac-919d-ea0e27499314&filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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IXYA12N250CHV IXYA12N250CHV IXYS media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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W2865HA680 W2865HA680 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
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W2865HA720 W2865HA720 IXYS W2865HA680-720_Type_DS.pdf Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
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IXFA6N120P-TRL IXFA6N120P-TRL IXYS littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9 Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
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QV6012NH4RP QV6012NH4RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+119.27 грн
Мінімальне замовлення: 500
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QV6012NH4RP QV6012NH4RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+311.43 грн
10+197.79 грн
100+139.67 грн
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QV6012NH5RP QV6012NH5RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+120.16 грн
Мінімальне замовлення: 500
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QV6012NH5RP QV6012NH5RP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+313.90 грн
10+199.14 грн
100+140.67 грн
Мінімальне замовлення: 2
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QV6012RH5TP QV6012RH5TP IXYS littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6 Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+290.84 грн
10+183.67 грн
100+129.10 грн
500+99.30 грн
1000+92.29 грн
Мінімальне замовлення: 2
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IXTA10P15T-TRL IXTA10P15T-TRL IXYS Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IXTA10P15T IXTA10P15T IXYS media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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CLA15E1200NPZ-TUB CLA15E1200NPZ-TUB IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA15E1200NPZ-TRL CLA15E1200NPZ-TRL IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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IXKH47N60CC3 IXYS Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
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IXFH60N20F IXYS Description: MOSFET N-CH 60A TO247
Packaging: Bulk
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IXFT60N20F IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFT60N20 IXYS Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFP12N65X2A IXYS Description: MOSFET N-CH TO220
Packaging: Bulk
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MKE38RK600DFEL-TUB MKE38RK600DFEL-TUB IXYS littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFT21N50 IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXFT21N50F IXYS Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXTU4N60P IXYS Description: MOSFET N-CH TO251
Packaging: Bulk
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W3082MC420 media?resourcetype=datasheets&itemid=05e7f4a2-f30d-4d21-ba39-877b28451567&filename=littelfuse_discrete_diodes_rectifier_w3082mc4_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 4.2KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4200 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4200 V
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W3082MC450 media?resourcetype=datasheets&itemid=05e7f4a2-f30d-4d21-ba39-877b28451567&filename=littelfuse_discrete_diodes_rectifier_w3082mc4_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 4.5KV 3120A W54
Packaging: Box
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 µs
Technology: Standard
Current - Average Rectified (Io): 3120A
Supplier Device Package: W54
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 4500 V
Voltage - Forward (Vf) (Max) @ If: 2.58 V @ 8600 A
Current - Reverse Leakage @ Vr: 50 mA @ 4500 V
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IXGA12N120A3-TRL
IXGA12N120A3-TRL
Виробник: IXYS
Description: IXGA12N120A3 TRL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/62ns
Test Condition: 960V, 12A, 10Ohm, 15V
Gate Charge: 20.4 nC
Current - Collector (Ic) (Max): 22 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 100 W
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IXXH140N65B4 media?resourcetype=datasheets&itemid=ee77c7a1-ef04-4808-a4a8-2d44c90c6683&filename=littelfuse_discrete_igbts_xpt_ixxh140n65b4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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IXXH140N65C4 media?resourcetype=datasheets&itemid=1337f9d6-e395-4c14-b9ae-2e1a8fdfb915&filename=littelfuse_discrete_igbts_xpt_ixxh140n65c4_datasheet.pdf
Виробник: IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 120A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: PT
Td (on/off) @ 25°C: 43ns/240ns
Switching Energy: 4.9mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 320 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 730 A
Power - Max: 1200 W
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IXXX140N65B4H1 littelfuse_discrete_igbts_xpt_ixxx140n65b4h1_datasheet.pdf.pdf
Виробник: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 120A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 54ns/270ns
Switching Energy: 5.75mJ (on), 2.67mJ (off)
Test Condition: 400V, 100A, 4.7Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 340 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 840 A
Power - Max: 1200 W
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N3229QK040 media?resourcetype=datasheets&amp;itemid=2c25cda7-c378-4178-9d52-fca724bcee0c&amp;filename=littelfuse_discrete_thyristors_phase_control_n3229qk0_0_datasheet.pdf
Виробник: IXYS
Description: SCR 400V 6305A WP2
Packaging: Box
Package / Case: TO-200AB, B-PuK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 140°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30800A @ 50Hz
Current - On State (It (AV)) (Max): 3229 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.57 V
Current - Off State (Max): 100 mA
Supplier Device Package: WP2
Current - On State (It (RMS)) (Max): 6305 A
Voltage - Off State: 400 V
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IXTY2P50PA media?resourcetype=datasheets&itemid=b70aee1e-47d9-44bf-9501-675ee6ddec21&filename=power_semiconductor_discrete_mosfet_ixty2p50pa_datasheet.pdf
Виробник: IXYS
Description: AUTOMOTIVE GRADE POLARPTM P-CHAN
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 11.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Qualification: AEC-Q101
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DFE250X600NA
DFE250X600NA
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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DHG100X650NA
DHG100X650NA
Виробник: IXYS
Description: DIODE MOD GP 600V 125A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 125A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 125 A
Current - Reverse Leakage @ Vr: 3 mA @ 600 V
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MTC120W55GC-SMD MTC120W55GC_tent.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
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W4693QK050 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 500V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 500 V
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W4693QK080 media?resourcetype=datasheets&amp;itemid=635eec65-0f10-4454-8fbe-3605d53f77a0&amp;filename=littelfuse_discrete_diodes_rectifier_w4693qk0_0_datasheet.pdf
Виробник: IXYS
Description: DIODE GEN PURP 800V 4693A WD2
Packaging: Box
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15.5 µs
Technology: Standard
Current - Average Rectified (Io): 4693A
Supplier Device Package: WD2
Operating Temperature - Junction: -40°C ~ 180°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3000 A
Current - Reverse Leakage @ Vr: 50 mA @ 800 V
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MCMA160P1600YA media?resourcetype=datasheets&itemid=46e2aa76-e5c2-4ef5-9682-66d40892bf62&filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1600ya_datasheet.pdf
MCMA160P1600YA
Виробник: IXYS
Description: SCR MODULE 1.6KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.6 kV
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5253.17 грн
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MCMA160P1800YA-MI media?resourcetype=datasheets&amp;itemid=35c9a7c8-2a30-40ee-a886-76e59e078821&amp;filename=littelfuse_thyristor_modules_thyristor_diode_mcma160p1800ya-mi_datasheet.pdf
Виробник: IXYS
Description: SCR MODULE 1.8KV 160A MODULE
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5130A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 160 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 250 A
Voltage - Off State: 1.8 kV
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DSSK10-018A DSSK10-018A.pdf
DSSK10-018A
Виробник: IXYS
Description: DIODE ARR SCHOTT 180V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 5 A
Current - Reverse Leakage @ Vr: 300 µA @ 180 V
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CMA80E1400HB
Виробник: IXYS
Description: THYRISTOR - TO247
Packaging: Tube
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MTC120WX55GD-SMD MTC120WX55GD_tent.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 55V 150A
Packaging: Tube
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6970pF @ 25V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
на замовлення 156 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+2103.54 грн
Мінімальне замовлення: 13
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IRFP470 IRFP470.pdf
IRFP470
Виробник: IXYS
Description: MOSFET N-CH 500V 24A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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DGSK20-025AS-TUB DGS,DGSK 9, 10, 20-025A,AS.pdf
DGSK20-025AS-TUB
Виробник: IXYS
Description: DIODE ARR SCHOT 250V 12A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A
Supplier Device Package: TO-263AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 1.3 mA @ 250 V
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IXYH40N120B4H1 PdfFile_145990.pdf
IXYH40N120B4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 112A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247 (IXTH)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 430 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 32A
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/220ns
Switching Energy: 5.9mJ (on), 2.9mJ (off)
Test Condition: 960V, 32A, 5Ohm, 15V
Gate Charge: 94 nC
Current - Collector (Ic) (Max): 112 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 600 W
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+894.75 грн
30+520.49 грн
120+445.71 грн
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MDD810-12N2 media?resourcetype=datasheets&itemid=96f50344-a6b2-47eb-8cd8-997806a5138c&filename=littelfuse_diode_modules_single_and_dual_md_810_1_n2_datasheet.pdf
Виробник: IXYS
Description: DIODE MODULE GP 1200V 807A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 16.5 µs
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 807A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 2000 A
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
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IXFN140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 SOT
Packaging: Tube
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IXYN110N120C4H1 ixyn110n120c4h1-datasheet.pdf
IXYN110N120C4H1
Виробник: IXYS
Description: 1200V, 110A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 210 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5420 pF @ 25 V
на замовлення 226 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3150.58 грн
10+2275.66 грн
100+2096.24 грн
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IXYN110N120B4H1
IXYN110N120B4H1
Виробник: IXYS
Description: 1200V,110A, XPT GEN4 B4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 218 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 830 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 5460 pF @ 25 V
на замовлення 43 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2598.57 грн
10+2150.22 грн
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IXYK85N120C4H1 ixyk85n120c4h1-datasheet?assetguid=b555c4ac-c9da-4e14-893d-e9719a49568a
IXYK85N120C4H1
Виробник: IXYS
Description: IGBT TRENCH 1200V 220A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 265 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
Supplier Device Package: SOT-227B
IGBT Type: Trench
Td (on/off) @ 25°C: 35ns/280ns
Switching Energy: 4.3mJ (on), 2mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 192 nC
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 420 A
Power - Max: 1150 W
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1745.01 грн
25+1097.12 грн
100+1006.95 грн
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IXYN85N120C4H1 ixyn85n120c4h1-datasheet?assetguid=930f3d26-e1b3-4dd7-9c5a-00ba209dd8d1
IXYN85N120C4H1
Виробник: IXYS
Description: 1200V, 85A, XPT GEN4 C4 CO-PACK
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 85A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: Trench
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4030 pF @ 25 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2427.20 грн
10+1729.34 грн
100+1525.87 грн
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MXB12R600DPHFC Power%20Semiconductor%20Selection%20Guide.pdf
MXB12R600DPHFC
Виробник: IXYS
Description: MOSFET N-CH 600V 15A
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Supplier Device Package: ISOPLUS i4-PAC™
Drain to Source Voltage (Vdss): 650 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+922.76 грн
10+786.00 грн
100+608.89 грн
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MCNA40P2200TA media?resourcetype=datasheets&amp;itemid=952f8405-8f29-4611-84f1-f4fcab97bad2&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna40p2200ta%2520datasheet.pdf
MCNA40P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 70 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A, 540A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 40 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 63 A
Voltage - Off State: 2.2 kV
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MCNA55P2200TA media?resourcetype=datasheets&amp;itemid=ab546c32-a62a-4bec-af59-64a87d61a795&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna55p2200ta%2520datasheet.pdf
MCNA55P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A, 1080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 55 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 86 A
Voltage - Off State: 2.2 kV
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MCNA75P2200TA media?resourcetype=datasheets&amp;itemid=d097c356-09f8-4361-a33f-a42d9b166a44&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna75p2200ta%2520datasheet.pdf
MCNA75P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A, 1510A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 75 A
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Current - On State (It (RMS)) (Max): 118 A
Voltage - Off State: 2.2 kV
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MCNA95P2200TA media?resourcetype=datasheets&amp;itemid=e20778ab-a8a6-4408-9585-a3df737cd156&amp;filename=littelfuse%2520power%2520semiconductors%2520mcna95p2200ta%2520datasheet.pdf
MCNA95P2200TA
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR TO-2
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1700A, 1840A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 95 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 149 A
Voltage - Off State: 2.2 kV
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IXFR140N60X3
Виробник: IXYS
Description: DISCRETE MOSFET 140A 600V X3 ISO
Packaging: Tube
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IXTA230N04T4 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_230n04t4_datasheet.pdf.pdf
IXTA230N04T4
Виробник: IXYS
Description: MOSFET N-CH 40V 230A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 115A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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MDD56-14N1B media?resourcetype=datasheets&itemid=EFA63FC9-9031-452B-972F-39004ADFE8BA&filename=Littelfuse-Power-Semiconductors-MDD56-14N1B-Datasheet
MDD56-14N1B
Виробник: IXYS
Description: DIODE MOD GP 1.4KV 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1400 V
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MDD56-08N1B MDD56-08N1B.pdf
MDD56-08N1B
Виробник: IXYS
Description: DIODE MODULE GP 800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 800 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2091.05 грн
В кошику  од. на суму  грн.
IXTA140N12T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_140n12t2_datasheet.pdf.pdf
IXTA140N12T2
Виробник: IXYS
Description: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+396.16 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
IXYT12N250CV1HV media?resourcetype=datasheets&itemid=13066e92-8f65-4aac-919d-ea0e27499314&filename=littelfuse_discrete_igbts_xpt_ixy_12n250cv1hv_datasheet.pdf
IXYT12N250CV1HV
Виробник: IXYS
Description: IGBT 2500V 28A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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IXYA12N250CHV media?resourcetype=datasheets&amp;itemid=12016a43-b4f8-4b18-a621-534e2a1ab70d&amp;filename=littelfuse_discrete_igbts_xpt_ixy_12n250chv_datasheet.pdf
IXYA12N250CHV
Виробник: IXYS
Description: DISC IGBT XPT-HI VOLTAGE TO-263D
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 16 ns
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 12A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 12ns/167ns
Switching Energy: 3.56mJ (on), 1.7mJ (off)
Test Condition: 1250V, 12A, 10Ohm, 15V
Gate Charge: 56 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 310 W
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W2865HA680 W2865HA680-720_Type_DS.pdf
W2865HA680
Виробник: IXYS
Description: DIODE STANDARD 6800V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 6800 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6800 V
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W2865HA720 W2865HA680-720_Type_DS.pdf
W2865HA720
Виробник: IXYS
Description: DIODE STANDARD 7200V 4825A W121
Packaging: Box
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 53 µs
Technology: Standard
Current - Average Rectified (Io): 4825A
Supplier Device Package: W121
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 7200 V
Voltage - Forward (Vf) (Max) @ If: 4.04 V @ 10000 A
Current - Reverse Leakage @ Vr: 100 mA @ 7200 V
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IXFA6N120P-TRL littelfuse-discrete-mosfets-ixf-6n120p-datasheet?assetguid=9cf1dfc3-74f0-471e-a74f-b4fdec41c8a9
IXFA6N120P-TRL
Виробник: IXYS
Description: MOSFET N-CH 1200V 6A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 500mA, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 25 V
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QV6012NH4RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+119.27 грн
Мінімальне замовлення: 500
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QV6012NH4RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH4RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+311.43 грн
10+197.79 грн
100+139.67 грн
Мінімальне замовлення: 2
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QV6012NH5RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+120.16 грн
Мінімальне замовлення: 500
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QV6012NH5RP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012NH5RP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-263 (D2Pak)
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+313.90 грн
10+199.14 грн
100+140.67 грн
Мінімальне замовлення: 2
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QV6012RH5TP littelfuse-thyristor-qvxx12xhx-datasheet?assetguid=b3cd379e-1c95-41fd-986c-ece0e263c0a6
QV6012RH5TP
Виробник: IXYS
Description: TRIAC SENS GATE 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 140A, 153A
Voltage - Gate Trigger (Vgt) (Max): 1.2 V
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+290.84 грн
10+183.67 грн
100+129.10 грн
500+99.30 грн
1000+92.29 грн
Мінімальне замовлення: 2
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IXTA10P15T-TRL
IXTA10P15T-TRL
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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IXTA10P15T media?resourcetype=datasheets&itemid=382379d8-542e-45c6-bf43-2681718cca42&filename=littelfuse_discrete_mosfets_p-channel_ixt_10p15t_datasheet.pdf
IXTA10P15T
Виробник: IXYS
Description: MOSFET P-CH 150V 10A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
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CLA15E1200NPZ-TUB Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf
CLA15E1200NPZ-TUB
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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CLA15E1200NPZ-TRL Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLA15E1200NPZ.pdf
CLA15E1200NPZ-TRL
Виробник: IXYS
Description: SCR 1.2KV 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 70 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
Current - On State (It (AV)) (Max): 15 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.35 V
Supplier Device Package: TO-263HV
Current - On State (It (RMS)) (Max): 33 A
Voltage - Off State: 1.2 kV
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IXKH47N60CC3
Виробник: IXYS
Description: MOSFET N-CH 600V 47A TO247AD
Packaging: Bulk
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IXFH60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO247
Packaging: Bulk
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IXFT60N20F
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFT60N20
Виробник: IXYS
Description: MOSFET N-CH 60A TO268
Packaging: Bulk
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IXFP12N65X2A
Виробник: IXYS
Description: MOSFET N-CH TO220
Packaging: Bulk
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MKE38RK600DFEL-TUB littelfuse_discrete_mosfets_smpd_packages_mke38rk600dfelb_datasheet.pdf.pdf
MKE38RK600DFEL-TUB
Виробник: IXYS
Description: MOSFET N-CH 600V 50A SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: ISOPLUS-SMPD™.B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
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IXFT21N50
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXFT21N50F
Виробник: IXYS
Description: MOSFET N-CH 21A TO268
Packaging: Bulk
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IXTU4N60P
Виробник: IXYS
Description: MOSFET N-CH TO251
Packaging: Bulk
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