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IXFX52N30Q IXYS Description: MOSFET N-CH 300V 52A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Power Dissipation (Max): 360W (Tc)
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
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MDD26-18N1B MDD26-18N1B IXYS MDD26-18N1B.pdf Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B IXYS MDD56-18N1B.pdf Description: DIODE MOD GP 1800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
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IXGH56N60B3 IXYS Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420 IXYS Description: SCR 4.2KV W77
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MDA72-16N1B MDA72-16N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 1.6KV 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+3274.12 грн
10+2907.50 грн
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IXFP30N25X3M IXFP30N25X3M IXYS Description: MOSFET N-CH 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
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IXFJ80N25X3 IXFJ80N25X3 IXYS PCIM_Highlights_2017.pdf Description: MOSFET N-CH 250V 44A ISO TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+1030.10 грн
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MCB20P1200LB-TRR IXYS Description: MCB20P1200LB-TRR
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MCB30P1200LB-TRR IXYS media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf Description: MOSFET 2N-CH 1200V 9SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: 9-SMPD-B
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CLE90UH1200TLB-TRR IXYS Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf Description: BIPOLAR MODULE - THYRISTOR SMPD
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MCB60P1200TLB-TRR IXYS Description: MCB60P1200TLB-TRR
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MCB40P1200LB-TRR IXYS Description: MCB40P1200LB-TRR
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DHG60U1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DHG40B1200LB-TRR IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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MKH17RP650DCGL-TRR IXYS Description: MKH17RP650DCGLB-TRR
Packaging: Tape & Reel (TR)
Part Status: Active
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N3175HE160 IXYS Description: SCR 1.6KV 6310A W80
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N3175HE180 IXYS media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf Description: SCR 1.8KV 6310A W80
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3175 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W80
Current - On State (It (RMS)) (Max): 6310 A
Voltage - Off State: 1.8 kV
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IXA20RG1200DHG-TUB IXA20RG1200DHG-TUB IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20RG1200DHG-TRR IXA20RG1200DHG-TRR IXYS littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf Description: IGBT 1200V 32A 125W SMPD
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IXA20I1200PZ-TUB IXA20I1200PZ-TUB IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
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IXA20I1200PZ-TRL IXA20I1200PZ-TRL IXYS Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
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IXYP24N100A4 IXYP24N100A4 IXYS media?resourcetype=datasheets&itemid=10de694c-f2b8-4ef8-81d5-7cb713d12062&filename=littelfuse_discrete_igbts_xpt_ixy_24n100a4_datasheet.pdf Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
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IXFP8N65X2M IXFP8N65X2M IXYS Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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QJ8035LH4TP QJ8035LH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
1+432.24 грн
10+282.03 грн
100+219.07 грн
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QJ8035RH4TP QJ8035RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
1+473.65 грн
10+307.47 грн
100+223.03 грн
500+175.54 грн
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QJ8035NH4TP QJ8035NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
1+449.63 грн
10+293.36 грн
100+214.26 грн
500+200.19 грн
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VBE60-12A VBE60-12A IXYS media?resourcetype=datasheets&itemid=817e6158-659b-4fa4-98c2-90dea7c6d7b2&filename=littelfuse%2520power%2520semiconductors%2520vbe60-12a%2520datasheet.pdf Description: PWRDIODEDISC-RECTIFIER SOT-227B(
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
1+1719.04 грн
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MDNA660U2200PT-PC IXYS Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
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N1725MC360 IXYS Description: SCR 3.6KV 3360A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - On State (It (AV)) (Max): 1725 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3360 A
Voltage - Off State: 3.6 kV
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IXTA140P05T-TRL IXTA140P05T-TRL IXYS Description: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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QJ8030RH4TP QJ8030RH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
1+441.35 грн
10+285.22 грн
100+205.98 грн
500+161.61 грн
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
500+221.52 грн
Мінімальне замовлення: 500
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QJ8035NH4RP QJ8035NH4RP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
1+529.13 грн
10+345.11 грн
100+252.07 грн
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QJ8030NH4TP QJ8030NH4TP IXYS QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
1+512.56 грн
10+334.02 грн
100+243.55 грн
500+192.37 грн
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DSA120X150LB-TUB DSA120X150LB-TUB IXYS DSA120X150LB.pdf Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251 Description: SCR 1.2KV 7.8A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
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CLA5E1200UC-TRL CLA5E1200UC-TRL IXYS Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251 Description: SCR 1.2KV 7.8A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)
2+269.95 грн
10+170.00 грн
100+119.11 грн
500+91.36 грн
1000+84.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DHG40B1200LB-TUB IXYS Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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IXFQ80N25X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
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S6X8BBS3RP S6X8BBS3RP IXYS littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552 Description: SCR 600V 800MA SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
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S6X8BBS3RP S6X8BBS3RP IXYS littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552 Description: SCR 600V 800MA SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 1025 шт:
термін постачання 21-31 дні (днів)
6+65.42 грн
10+39.47 грн
100+25.64 грн
500+18.48 грн
1000+16.68 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
DMA30P1200HB IXYS media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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MKH17RP650DCGL-TUB IXYS Description: MKH17RP650DCGLB-TUB
Packaging: Tube
Part Status: Active
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MKH24I650HR IXYS media?resourcetype=datasheets&itemid=7a052698-ad25-450e-a21d-07ac16a73f21&filename=littelfuse_discrete_mosfets_n-channel_super_junction_mkh24i650hr_datasheet.pdf Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Packaging: Tube
Part Status: Active
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S6X8TS3RP IXYS littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+26.18 грн
2000+22.85 грн
Мінімальне замовлення: 1000
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S6X8TS3RP IXYS littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
6+59.62 грн
10+50.55 грн
100+38.73 грн
500+28.73 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
CNA30E2200FB CNA30E2200FB IXYS media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
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LGD8201TH IXYS Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
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LGB8204ATH LGB8204ATH IXYS media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
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LST3205EL2CT2 IXYS Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
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GWM120-0075P3-SMD SAM IXYS GWM120-0075P3.pdf Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM IXYS GWM120-0075X1.pdf Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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QJ6016LH5TP QJ6016LH5TP IXYS media?resourcetype=datasheets&itemid=934af8ac-0990-4353-9df1-3419f5ddbf24&filename=littelfuse-thyristor-qjxx16xhx-datasheet Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+318.80 грн
10+275.74 грн
100+225.90 грн
500+180.47 грн
1000+152.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DMA10IM1600UZ-TUB DMA10IM1600UZ-TUB IXYS media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
3+134.14 грн
70+103.99 грн
140+85.55 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DPF240X400NA DPF240X400NA IXYS Littelfuse-Power-Semiconductors-DPF240X400NA-Datasheet?assetguid=380125f6-bc2b-4f6f-83b6-1fd0111f38c5 Description: DIODE MOD GP 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
1+2347.53 грн
10+2234.35 грн
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R1127NC32P IXYS Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
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MCMA140PD1600TB-NI MCMA140PD1600TB-NI IXYS PdfFile_212238.pdf Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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IXFJ52N30Q IXYS Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXDR35N120D1 IXYS Description: IGBT
Packaging: Bulk
Part Status: Obsolete
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IXFX52N30Q
Виробник: IXYS
Description: MOSFET N-CH 300V 52A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Power Dissipation (Max): 360W (Tc)
Supplier Device Package: PLUS247™-3
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
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MDD26-18N1B MDD26-18N1B.pdf
MDD26-18N1B
Виробник: IXYS
Description: DIODE MODULE 1.8KV 36A TO240AA
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MDD56-18N1B MDD56-18N1B.pdf
MDD56-18N1B
Виробник: IXYS
Description: DIODE MOD GP 1800V 95A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 95A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1800 V
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IXGH56N60B3
Виробник: IXYS
Description: DISC IGBT PT-MID FREQUENCY TO-24
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K1270MA420
Виробник: IXYS
Description: SCR 4.2KV W77
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MDA72-16N1B MDD72,%20MDA72.pdf
MDA72-16N1B
Виробник: IXYS
Description: DIODE MODULE 1.6KV 113A TO240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 113A
Supplier Device Package: TO-240AA
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 300 A
Current - Reverse Leakage @ Vr: 15 mA @ 1600 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3274.12 грн
10+2907.50 грн
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IXFP30N25X3M
IXFP30N25X3M
Виробник: IXYS
Description: MOSFET N-CH 250V 30A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220 Isolated Tab
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
товару немає в наявності
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IXFJ80N25X3 PCIM_Highlights_2017.pdf
IXFJ80N25X3
Виробник: IXYS
Description: MOSFET N-CH 250V 44A ISO TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 40A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: ISO TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1030.10 грн
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MCB20P1200LB-TRR
Виробник: IXYS
Description: MCB20P1200LB-TRR
товару немає в наявності
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MCB30P1200LB-TRR media?resourcetype=datasheets&itemid=5a7c5301-a704-415b-8ddc-e9365d96adad&filename=littelfuse%2520power%2520semiconductors%2520mcb30p1200lb%2520datasheet.pdf
Виробник: IXYS
Description: MOSFET 2N-CH 1200V 9SMPD
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Supplier Device Package: 9-SMPD-B
товару немає в наявності
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CLE90UH1200TLB-TRR Viewer.aspx?p=https%3a%2f%2fixapps.ixys.com%2fDataSheet%2fCLE90UH1200TLB.pdf
Виробник: IXYS
Description: BIPOLAR MODULE - THYRISTOR SMPD
товару немає в наявності
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MCB60P1200TLB-TRR
Виробник: IXYS
Description: MCB60P1200TLB-TRR
товару немає в наявності
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MCB40P1200LB-TRR
Виробник: IXYS
Description: MCB40P1200LB-TRR
товару немає в наявності
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DHG60U1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
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DHG40B1200LB-TRR
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
товару немає в наявності
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MKH17RP650DCGL-TRR
Виробник: IXYS
Description: MKH17RP650DCGLB-TRR
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
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N3175HE160
Виробник: IXYS
Description: SCR 1.6KV 6310A W80
товару немає в наявності
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N3175HE180 media?resourcetype=datasheets&amp;itemid=5768ca36-608a-49f0-9516-8afe9a8c20e9&amp;filename=littelfuse_discrete_thyristors_phase_control_n3175he1_0_datasheet.pdf
Виробник: IXYS
Description: SCR 1.8KV 6310A W80
Packaging: Box
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
Current - On State (It (AV)) (Max): 3175 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 1.2 V
Current - Off State (Max): 150 mA
Supplier Device Package: W80
Current - On State (It (RMS)) (Max): 6310 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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IXA20RG1200DHG-TUB littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TUB
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товару немає в наявності
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IXA20RG1200DHG-TRR littelfuse_discrete_igbts_smpd_packages_ixa20rg1200dhglb_datasheet.pdf.pdf
IXA20RG1200DHG-TRR
Виробник: IXYS
Description: IGBT 1200V 32A 125W SMPD
товару немає в наявності
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IXA20I1200PZ-TUB
IXA20I1200PZ-TUB
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
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IXA20I1200PZ-TRL
IXA20I1200PZ-TRL
Виробник: IXYS
Description: DISC IGBT XPT-GENX3 TO-263D2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-263HV
IGBT Type: PT
Td (on/off) @ 25°C: 48ns/230ns
Switching Energy: 1.6mJ (on), 1.7mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 47 nC
Current - Collector (Ic) (Max): 38 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 165 W
товару немає в наявності
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IXYP24N100A4 media?resourcetype=datasheets&itemid=10de694c-f2b8-4ef8-81d5-7cb713d12062&filename=littelfuse_discrete_igbts_xpt_ixy_24n100a4_datasheet.pdf
IXYP24N100A4
Виробник: IXYS
Description: IGBT DISCRETE TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: PT
Td (on/off) @ 25°C: 13ns/216ns
Switching Energy: 3.5mJ (on), 2.3mJ (off)
Test Condition: 800V, 24A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 145 A
Power - Max: 375 W
товару немає в наявності
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IXFP8N65X2M
IXFP8N65X2M
Виробник: IXYS
Description: MOSFET N-CH 650V 8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Isolated Tab
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
товару немає в наявності
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QJ8035LH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035LH4TP
Виробник: IXYS
Description: TRIAC ALTRNSTR 800V 35A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 438 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.24 грн
10+282.03 грн
100+219.07 грн
В кошику  од. на суму  грн.
QJ8035RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 699 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+473.65 грн
10+307.47 грн
100+223.03 грн
500+175.54 грн
В кошику  од. на суму  грн.
QJ8035NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 678 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+449.63 грн
10+293.36 грн
100+214.26 грн
500+200.19 грн
В кошику  од. на суму  грн.
VBE60-12A media?resourcetype=datasheets&itemid=817e6158-659b-4fa4-98c2-90dea7c6d7b2&filename=littelfuse%2520power%2520semiconductors%2520vbe60-12a%2520datasheet.pdf
VBE60-12A
Виробник: IXYS
Description: PWRDIODEDISC-RECTIFIER SOT-227B(
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: SOT-227B
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 60 A
Voltage - Forward (Vf) (Max) @ If: 3.15 V @ 60 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1719.04 грн
В кошику  од. на суму  грн.
MDNA660U2200PT-PC
Виробник: IXYS
Description: MDNA660U2200PTEH-PC
Packaging: Box
Part Status: Active
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N1725MC360
Виробник: IXYS
Description: SCR 3.6KV 3360A W70
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 22000A @ 50Hz
Current - On State (It (AV)) (Max): 1725 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 150 mA
Supplier Device Package: W70
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 3360 A
Voltage - Off State: 3.6 kV
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IXTA140P05T-TRL
IXTA140P05T-TRL
Виробник: IXYS
Description: IXTA140P05T
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 70A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
товару немає в наявності
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QJ8030RH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030RH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.35 грн
10+285.22 грн
100+205.98 грн
500+161.61 грн
В кошику  од. на суму  грн.
QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
500+221.52 грн
Мінімальне замовлення: 500
В кошику  од. на суму  грн.
QJ8035NH4RP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8035NH4RP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 35A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 35 A
Voltage - Off State: 800 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+529.13 грн
10+345.11 грн
100+252.07 грн
В кошику  од. на суму  грн.
QJ8030NH4TP QJxx30xH4_QJxx35xH4_Series_RevTK2-23-23.pdf
QJ8030NH4TP
Виробник: IXYS
Description: TRIAC ALTERNISTOR 800V 30A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 290A, 350A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Current - On State (It (RMS)) (Max): 30 A
Voltage - Off State: 800 V
на замовлення 823 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+512.56 грн
10+334.02 грн
100+243.55 грн
500+192.37 грн
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DSA120X150LB-TUB DSA120X150LB.pdf
DSA120X150LB-TUB
Виробник: IXYS
Description: DIODE ARRAY SCHOTTKY 150V SMPD
Packaging: Tube
Package / Case: 9-SMD Module
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 75A
Supplier Device Package: ISOPLUS-SMPD™.B
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
товару немає в наявності
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CLA5E1200UC-TRL Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251
CLA5E1200UC-TRL
Виробник: IXYS
Description: SCR 1.2KV 7.8A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
товару немає в наявності
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CLA5E1200UC-TRL Littelfuse-Power-Semiconductors-CLA5E1200UC-Datasheet?assetguid=99286ef8-2b89-4bca-bc78-e75f2cb09251
CLA5E1200UC-TRL
Виробник: IXYS
Description: SCR 1.2KV 7.8A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 20 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 50A, 54A
Current - On State (It (AV)) (Max): 5 A
Voltage - Gate Trigger (Vgt) (Max): 1.8 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-252AA
Part Status: Active
Current - On State (It (RMS)) (Max): 7.8 A
Voltage - Off State: 1.2 kV
на замовлення 2422 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.95 грн
10+170.00 грн
100+119.11 грн
500+91.36 грн
1000+84.80 грн
Мінімальне замовлення: 2
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DHG40B1200LB-TUB
Виробник: IXYS
Description: BIPOLAR MODULE-BRIDGE RECTIFIER
Packaging: Tube
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 9-SMPD-B
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 34 A
Voltage - Forward (Vf) (Max) @ If: 2.24 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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IXFQ80N25X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_80n25x3_datasheet.pdf.pdf
Виробник: IXYS
Description: MOSFET N-CH 250V 80A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 40A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
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S6X8BBS3RP littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552
S6X8BBS3RP
Виробник: IXYS
Description: SCR 600V 800MA SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
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S6X8BBS3RP littelfuse-thyristor-sxx8bbs-datasheet?assetguid=07e719ad-ac15-4c85-9778-6c7fdef5b552
S6X8BBS3RP
Виробник: IXYS
Description: SCR 600V 800MA SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 10A, 12A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 5 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 1025 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+65.42 грн
10+39.47 грн
100+25.64 грн
500+18.48 грн
1000+16.68 грн
Мінімальне замовлення: 6
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DMA30P1200HB media?resourcetype=datasheets&itemid=9e8e9c31-8e39-46b5-8db7-7500dfb48089&filename=littelfuse-power-semiconductors-dma30p1200hb-datasheet
Виробник: IXYS
Description: DIODE GEN PURP 1.2KV 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 11pF @ 400V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247 (IXTH)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
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MKH17RP650DCGL-TUB
Виробник: IXYS
Description: MKH17RP650DCGLB-TUB
Packaging: Tube
Part Status: Active
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MKH24I650HR media?resourcetype=datasheets&itemid=7a052698-ad25-450e-a21d-07ac16a73f21&filename=littelfuse_discrete_mosfets_n-channel_super_junction_mkh24i650hr_datasheet.pdf
Виробник: IXYS
Description: DISCMSFT NCHSUPRJUNCCFD-CLS ISO2
Packaging: Tube
Part Status: Active
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S6X8TS3RP littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+26.18 грн
2000+22.85 грн
Мінімальне замовлення: 1000
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S6X8TS3RP littelfuse_thyristor_sxx8xsx_datasheet.pdf.pdf
Виробник: IXYS
Description: 600V SENSITIVE SCR IN SOT223 PAC
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 10A
Current - On State (It (AV)) (Max): 510 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 3 µA
Supplier Device Package: SOT-23-3
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 800 V
на замовлення 3100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.62 грн
10+50.55 грн
100+38.73 грн
500+28.73 грн
Мінімальне замовлення: 6
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CNA30E2200FB media?resourcetype=datasheets&itemid=03d6ed5c-1cb4-41e7-980c-aaa0d075ef37&filename=Littelfuse-Power-Semiconductors-CNA30E2200FB-Datasheet
CNA30E2200FB
Виробник: IXYS
Description: SCR 2.2KV 47A I4-PAC
Packaging: Tube
Package / Case: i4-Pac™-5 (3 Leads)
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -10°C ~ 70°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A
Current - On State (It (AV)) (Max): 30 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 3 V
Current - Off State (Max): 50 µA
Supplier Device Package: ISOPLUS i4-PAC™
Part Status: Active
Current - On State (It (RMS)) (Max): 47 A
Voltage - Off State: 2.2 kV
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LGD8201TH
Виробник: IXYS
Description: DPAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 125 W
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LGB8204ATH media?resourcetype=datasheets&itemid=ef372b67-c6a1-42f9-a56c-a2c35c882046&filename=littelfuse_power_semiconductor_ignition_igbt_devices_lgb8204ath_datasheet.pdf
LGB8204ATH
Виробник: IXYS
Description: D2PAK, IGBT3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2V @ 4.5V, 10A
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 115 W
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LST3205EL2CT2
Виробник: IXYS
Description: THERMALLY PROTECTED MOV
Packaging: Bulk
Part Status: Active
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GWM120-0075P3-SMD SAM GWM120-0075P3.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 118A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Active
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GWM120-0075X1-SMDSAM GWM120-0075X1.pdf
Виробник: IXYS
Description: MOSFET 6N-CH 75V 110A ISOPLUS
Packaging: Tube
Package / Case: 17-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 110A
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS-DIL™
Part Status: Obsolete
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QJ6016LH5TP media?resourcetype=datasheets&itemid=934af8ac-0990-4353-9df1-3419f5ddbf24&filename=littelfuse-thyristor-qjxx16xhx-datasheet
QJ6016LH5TP
Виробник: IXYS
Description: 16 AMP STANDARD HIGH TEMPERATURE
Packaging: Tube
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 167A, 200A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: ITO-220AB
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+318.80 грн
10+275.74 грн
100+225.90 грн
500+180.47 грн
1000+152.20 грн
Мінімальне замовлення: 2
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DMA10IM1600UZ-TUB media?resourcetype=datasheets&itemid=d1ae78d5-d54b-4fde-8c69-d824a195d8c7&filename=Littelfuse-Power-Semiconductors-DMA10IM1600UZ-Datasheet
DMA10IM1600UZ-TUB
Виробник: IXYS
Description: DIODE GEN PURP 1.6KV 10A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 4pF @ 400V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.14 грн
70+103.99 грн
140+85.55 грн
Мінімальне замовлення: 3
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DPF240X400NA Littelfuse-Power-Semiconductors-DPF240X400NA-Datasheet?assetguid=380125f6-bc2b-4f6f-83b6-1fd0111f38c5
DPF240X400NA
Виробник: IXYS
Description: DIODE MOD GP 400V 120A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227B
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 120 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2347.53 грн
10+2234.35 грн
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R1127NC32P
Виробник: IXYS
Description: SCR 3.2KV 2247A W11
Packaging: Box
Package / Case: TO-200AC, K-PUK
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 1 A
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14100A @ 50Hz
Current - On State (It (AV)) (Max): 1127 A
Voltage - Gate Trigger (Vgt) (Max): 3 V
Voltage - On State (Vtm) (Max): 2.42 V
Current - Off State (Max): 100 mA
Supplier Device Package: W11
Part Status: Discontinued at Digi-Key
Current - On State (It (RMS)) (Max): 2247 A
Voltage - Off State: 3.2 kV
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MCMA140PD1600TB-NI PdfFile_212238.pdf
MCMA140PD1600TB-NI
Виробник: IXYS
Description: SCR MODULE 1.6KV 220A TO-240AA
Packaging: Box
Package / Case: TO-240AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2400A, 2590A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 140 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 220 A
Voltage - Off State: 1.6 kV
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IXFJ52N30Q
Виробник: IXYS
Description: MOSFET N-CH TO-220
Packaging: Tube
Part Status: Obsolete
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IXDR35N120D1
Виробник: IXYS
Description: IGBT
Packaging: Bulk
Part Status: Obsolete
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