Продукція > WMO
| Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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| WMO | Bussmann / Eaton | Specialty Fuses BUSS HEAT LIMITER | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO030N06HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 520A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO030N06LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 130A Pulsed drain current: 520A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 73.5nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO04N65C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 29W Technology: WMOS™ C2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO04N70C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 29W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | Мінімальне замовлення: 504 шт В кошику од. на суму грн. | ||||||||||||||
| WMO053NV8HG | Транзистори | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| WMO053NV8HGS | Wayon Electronics Co.,Ltd. | Транзистори | на замовлення 5000 шт: термін постачання 4-5 дні (днів) |
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| WMO05N100C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W Mounting: SMD Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO252 On-state resistance: 3.5Ω Pulsed drain current: 11A Power dissipation: 57W Gate charge: 12.6nC Polarisation: unipolar Technology: WMOS™ C2 Drain current: 2A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO05N65MM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252 Type of transistor: N-MOSFET Case: TO252 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Technology: WMOS™ MM Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 1.5Ω | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO060N10HGS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 105A Power dissipation: 138.9W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 420A Gate charge: 81.8nC Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO06N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 50W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO07N100C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.2A Power dissipation: 65W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 260ns Pulsed drain current: 12A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO07N60C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | на замовлення 152 шт: термін постачання 14-30 дні (днів) |
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| WMO07N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.8A Power dissipation: 42W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 9A Gate charge: 5.2nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO07N65C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Kind of channel: enhancement Power dissipation: 42W Technology: WMOS™ C2 Kind of package: reel; tape | на замовлення 164 шт: термін постачання 14-30 дні (днів) |
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| WMO07N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.8A Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.14Ω Mounting: SMD Gate charge: 5.2nC Kind of channel: enhancement Pulsed drain current: 9A Power dissipation: 42W Technology: WMOS™ C4 Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO07N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6.8A Power dissipation: 55W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO080N10HG2 | Транзистори | товару немає в наявності | В кошику од. на суму грн. | |||||||||||||||
| WMO080N10HG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 53.7A Power dissipation: 108.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 340A Gate charge: 21nC Kind of package: reel; tape | на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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| WMO08N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Power dissipation: 45W Case: TO252 Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Drain current: 3.6A Kind of channel: enhancement Drain-source voltage: 600V Gate-source voltage: ±30V On-state resistance: 780mΩ Pulsed drain current: 12A Polarisation: unipolar | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO08N65C4 | Wayon Electronics Co.,Ltd. | MOSFET N-Channel 650 V TO-252 Транзистори | на замовлення 2290 шт: термін постачання 4-5 дні (днів) |
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| WMO08N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W Drain-source voltage: 650V Drain current: 3.6A Case: TO252 Polarisation: unipolar On-state resistance: 780mΩ Pulsed drain current: 12A Power dissipation: 45W Technology: WMOS™ C4 Gate-source voltage: ±30V Kind of package: reel; tape Gate charge: 7.3nC Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO08N70C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 45W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 3.6A Pulsed drain current: 12A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 7.3nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO08N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Power dissipation: 70W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | на замовлення 1898 шт: термін постачання 14-30 дні (днів) |
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| WMO090NV6LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 70A; Idm: 280A; 73.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 70A Pulsed drain current: 280A Power dissipation: 73.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 115 шт: термін постачання 14-30 дні (днів) |
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| WMO1/2S-110RJA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-1K1JA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-22RJA5 | TT ELECTRONICS | Category: THT Resistors Description: Resistor: metal oxide; 22Ω; ±5%; axial; L: 7.5mm; Ø: 3mm Type of resistor: metal oxide Resistance: 22Ω Tolerance: ±5% Leads: axial Length: 7.5mm Diameter: 3mm | на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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| WMO1/2S-33KJA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-39RJA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-5K1JA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-62KJA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-82KJA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1/2S-9K1JA5 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO100N07T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252 Case: TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 400A Power dissipation: 133W Gate charge: 92nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 70V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.4mΩ | на замовлення 440 шт: термін постачання 14-30 дні (днів) |
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| WMO100P03TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -115A; Idm: -460A; 96W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -115A Pulsed drain current: -460A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 134nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N100C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 3.3A Pulsed drain current: 18A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 18.8nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ C2 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N50C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 45W Case: TO252 Mounting: SMD Drain-source voltage: 500V Gate-source voltage: ±30V Kind of package: reel; tape On-state resistance: 0.63Ω Pulsed drain current: 16A Gate charge: 7.3nC Technology: WMOS™ C4 Drain current: 4.8A Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N60C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252 Type of transistor: N-MOSFET Power dissipation: 57W Case: TO252 Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±30V On-state resistance: 690mΩ Polarisation: unipolar Technology: WMOS™ C2 Drain current: 8A Kind of channel: enhancement Drain-source voltage: 600V | на замовлення 1559 шт: термін постачання 14-30 дні (днів) |
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| WMO10N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Power dissipation: 57W Case: TO252 Mounting: SMD Gate charge: 9.6nC Kind of package: reel; tape Gate-source voltage: ±30V On-state resistance: 0.6Ω Pulsed drain current: 19A Polarisation: unipolar Technology: WMOS™ C4 Drain current: 4.8A Kind of channel: enhancement Drain-source voltage: 600V | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 13.5nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 24A Technology: WMOS™ EM | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N70C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 9.6nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N70EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.8A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 13.5nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO10N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2126 шт: термін постачання 14-30 дні (днів) |
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| WMO11N60C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: SMD Kind of channel: enhancement Technology: WMOS™ C2 Kind of package: reel; tape | на замовлення 2012 шт: термін постачання 14-30 дні (днів) |
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| WMO11N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.8A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 2.1nC | на замовлення 335 шт: термін постачання 14-30 дні (днів) |
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| WMO11N65SR | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 5.4A Power dissipation: 63W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 19A Gate charge: 13.7nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO11N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10.5A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO120N04TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 96W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 96W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 480A | на замовлення 329 шт: термін постачання 14-30 дні (днів) |
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| WMO12N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 12A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | на замовлення 1066 шт: термін постачання 14-30 дні (днів) |
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| WMO12P05T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -12A Pulsed drain current: -48A Power dissipation: 39W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 340 шт: термін постачання 14-30 дні (днів) |
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| WMO12P06TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -20A Pulsed drain current: -80A Power dissipation: 62.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 4557 шт: термін постачання 14-30 дні (днів) |
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| WMO13N10TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 13A Pulsed drain current: 52A Power dissipation: 39W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 626 шт: термін постачання 14-30 дні (днів) |
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| WMO13N50C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6A Power dissipation: 57W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Gate charge: 9.6nC Kind of channel: enhancement Pulsed drain current: 25A Technology: WMOS™ C4 Kind of package: reel; tape | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO13N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO13N80M3 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| WMO14N60C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | на замовлення 866 шт: термін постачання 14-30 дні (днів) |
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| WMO14N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO14N65C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO14N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Power dissipation: 85W Gate charge: 13nC Technology: WMOS™ C4 | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO15N10T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252 Mounting: SMD Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 90mΩ Pulsed drain current: 60A Power dissipation: 41.7W Gate charge: 20.6nC | на замовлення 808 шт: термін постачання 14-30 дні (днів) |
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| WMO15N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: TO252 On-state resistance: 0.3Ω Pulsed drain current: 26A Power dissipation: 86W Gate charge: 14.6nC Polarisation: unipolar Technology: WMOS™ C4 Drain current: 7.8A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO15N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.8A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 14.6nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO15N65F2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.8A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 335mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 14.7nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO16N60FD | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO16N65C2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO16N65FD | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO16N65SR | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.4A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 19.5nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO175N10HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252 Pulsed drain current: 180A Power dissipation: 67.5W Gate charge: 17nC Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 17.5mΩ Mounting: SMD | на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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| WMO175N10LG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252 Mounting: SMD Polarisation: unipolar Drain current: 45A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 17mΩ Pulsed drain current: 180A Power dissipation: 67.5W Gate charge: 22.5nC | на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| WMO17N25JN | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 6.5A Pulsed drain current: 33A Power dissipation: 36W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 98ns | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO18N20JN | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns Case: TO252 Mounting: SMD Reverse recovery time: 80ns On-state resistance: 135mΩ Drain current: 7A Gate-source voltage: ±20V Power dissipation: 36W Pulsed drain current: 39A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 7.2nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO18N20T2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 83W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 11nC | на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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| WMO18N50C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Power dissipation: 75W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 50A | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO18N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO18P10TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -18A Pulsed drain current: -72A Power dissipation: 70W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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| WMO190N03TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 190A Pulsed drain current: 760A Power dissipation: 166.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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| WMO190N15HG4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 54A; Idm: 216A; 121.4W; TO252 Mounting: SMD Pulsed drain current: 216A Power dissipation: 121.4W Gate charge: 24.8nC Polarisation: unipolar Drain current: 54A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 19.5mΩ | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-120RJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-1K1JA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-33KJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-39RJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-5K1JA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-62KJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-75RJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-82KJA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO1S-9K1JA1 | Welwyn Components / TT Electronics | Metal Oxide Resistors | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO20N65EM | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252 Type of transistor: N-MOSFET Technology: WMOS™ EM Case: TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V On-state resistance: 0.24Ω Polarisation: unipolar | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO20P15TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -20A; Idm: -80A; 147W; TO252 On-state resistance: 0.175Ω Mounting: SMD Pulsed drain current: -80A Power dissipation: 147W Gate charge: 84nC Polarisation: unipolar Drain current: -20A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 | на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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| WMO22N50C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO240N10LG2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Pulsed drain current: 144A Power dissipation: 56.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2510 шт: термін постачання 14-30 дні (днів) |
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| WMO25N06TS | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 22nC Kind of package: reel; tape | на замовлення 1578 шт: термін постачання 14-30 дні (днів) |
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| WMO25N10T1 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 25A Power dissipation: 53.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 44mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 100A Gate charge: 37.9nC Kind of package: reel; tape | на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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| WMO25N50C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W Drain-source voltage: 500V Drain current: 13A Case: TO252 Polarisation: unipolar On-state resistance: 0.16Ω Pulsed drain current: 65A Power dissipation: 135W Technology: WMOS™ C4 Kind of channel: enhancement Gate charge: 22.1nC Gate-source voltage: ±30V Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO25P03TS | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252 Polarisation: unipolar Gate charge: 20nC Drain current: -25A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 21mΩ Mounting: SMD Pulsed drain current: -100A Power dissipation: 22.5W | на замовлення 235 шт: термін постачання 14-30 дні (днів) |
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| WMO25P06T1 | WAYON | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 44.6W Case: TO252 Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement | на замовлення 2485 шт: термін постачання 14-30 дні (днів) |
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| WMO26N60C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 22.1nC | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO26N65C4 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. | ||||||||||||||
| WMO26N65F2 | WAYON | Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement | товару немає в наявності | В кошику од. на суму грн. |

