| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| PMEG45T15EPDAZ | NEXPERIA |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 21A Semiconductor structure: single diode Capacitance: 2.2nF Max. forward voltage: 0.405V Leakage current: 22mA Max. forward impulse current: 210A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| PMEG45T15EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1.5A Semiconductor structure: single diode Capacitance: 800pF Max. forward voltage: 0.58V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| PMEG45U10EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.49V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
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PUSB3FR4Z | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4 Type of diode: TVS array Breakdown voltage: 9V Max. forward impulse current: 7A Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: DFN2510A-10; SOT1176-1 Leakage current: 0.1µA Number of channels: 4 Capacitance: 0.34pF Application: HDMI |
на замовлення 10608 шт: термін постачання 14-30 дні (днів) |
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BUK9609-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W Mounting: SMD Pulsed drain current: 383A Power dissipation: 157W Gate charge: 32nC Polarisation: unipolar Drain current: 67A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±15V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 17.1mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BUK9609-75A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W Mounting: SMD Pulsed drain current: 440A Power dissipation: 230W Polarisation: unipolar Drain current: 75A Kind of channel: enhancement Drain-source voltage: 75V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 18.9mΩ |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||
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PSMN6R5-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 470A Power dissipation: 210W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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PSMN2R2-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 141W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R6-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 131W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R8-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 797A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R1-40PLQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1075A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: THT Gate charge: 168.9nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R0-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R7-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 730A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PSMN2R8-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.12mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN2R0-100SSFJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 189A Pulsed drain current: 1070A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 242nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R4-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Pulsed drain current: 580A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-25MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R9-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 517A Power dissipation: 92W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.45mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 793A Power dissipation: 142W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R0-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 143A Pulsed drain current: 807A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PSMN2R2-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PSMN2R2-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 789A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R4-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 580A Power dissipation: 88W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.47mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R5-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 682A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R6-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 575A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN2R8-25MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 536A Power dissipation: 88W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 3.25mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| PSMN020-30MLCX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74LVC2G241DP,125 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP8 Manufacturer series: Mini Logic Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
| 74LVC2G241GS,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,non-inverting,line driver; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; non-inverting Technology: CMOS Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| 74LVC2G241GT,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver Number of channels: 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: XSON8 Manufacturer series: Mini Logic Operating temperature: -40...125°C Kind of output: 3-state Family: LVC Supply voltage: 1.65...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| 2PA1774SMB,315 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.1A; 590mW; DFN1006B-3,SOT883B Type of transistor: PNP Polarisation: bipolar Power dissipation: 590mW Case: DFN1006B-3; SOT883B Mounting: SMD Kind of package: reel; tape Current gain: 270...560 Collector current: 0.1A Collector-emitter voltage: 40V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||
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BZX84-B5V6,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 5235 шт: термін постачання 14-30 дні (днів) |
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BZB84-B5V6,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Tolerance: ±2% Kind of package: reel; tape Max. forward voltage: 0.9V Power dissipation: 0.3W Max. load current: 0.2A Zener voltage: 5.6V |
на замовлення 320 шт: термін постачання 14-30 дні (днів) |
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BZB84-C5V6,215 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape Type of diode: Zener Semiconductor structure: common anode; double Mounting: SMD Case: SOT23 Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Power dissipation: 0.3W Max. load current: 0.2A Zener voltage: 5.6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-B5V6-QR | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NZX5V6D,133 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 5.6V; SOD27; single diode; 250mA; Ufmax: 1.5V Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Case: SOD27 Mounting: THT Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward voltage: 1.5V Max. load current: 0.25A |
на замовлення 7827 шт: термін постачання 14-30 дні (днів) |
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74HCT32DB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: SSOP14 Operating temperature: -40...125°C Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: tube |
на замовлення 387 шт: термін постачання 14-30 дні (днів) |
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74HCT32PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Operating temperature: -40...125°C Quiescent current: 40µA Delay time: 36ns Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74ALVCH16373DGG:11 | NEXPERIA |
Category: Latches Description: IC: digital; 16bit,3-state,D latch; Ch: 2; IN: 10; CMOS,TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; 16bit; D latch Number of channels: 2 Mounting: SMD Case: TSSOP48 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Family: ALVCH Supply voltage: 1.2...3.6V DC Number of inputs: 10 Technology: CMOS; TTL |
на замовлення 1969 шт: термін постачання 14-30 дні (днів) |
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| 74HCT259BQ,115 | NEXPERIA |
Category: Latches Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; TTL; 4.5÷5.5VDC; SMD; DHVQFN16 Operating temperature: -40...125°C Technology: TTL Number of inputs: 6 Kind of package: reel; tape Case: DHVQFN16 Family: HCT Kind of integrated circuit: 8bit; latch Number of channels: 1 Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| 74ALVCH16843DGGY | NEXPERIA |
Category: Latches Description: IC: digital; 18bit,3-state,bus interface,D latch; Ch: 2; IN: 13 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 18bit; bus interface; D latch Number of channels: 2 Technology: CMOS; TTL Supply voltage: 1.2...3.6V DC Mounting: SMD Case: TSSOP56 Operating temperature: -40...85°C Family: ALVCH Kind of output: 3-state Kind of package: reel; tape Number of inputs: 13 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||
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BZX79-C16,143 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 0.4/0.5W; 16V; DO35; single diode; 250mA; Ammo Pack Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 16V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Max. load current: 0.25A |
на замовлення 4239 шт: термін постачання 14-30 дні (днів) |
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BZX79-C10,133 | NEXPERIA |
Category: THT Zener diodes Description: Diode: Zener; 0.4/0.5W; 10V; DO35; single diode; 250mA; Ufmax: 0.9V Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 10V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Max. forward voltage: 0.9V Max. load current: 0.25A Kind of package: Ammo Pack |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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PSSI2021SAY,115 | NEXPERIA |
Category: Voltage regulators - PWM circuits Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC Type of integrated circuit: driver Kind of integrated circuit: CV/CC controller Case: SOT353 Output current: 50mA Supply voltage: 5...75V DC Mounting: SMD Operating temperature: -65...150°C Application: for LED applications |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZV55-C22,135 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 22V; SMD; SOD80C; Ifmax: 250mA; single diode Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 25 шт В кошику од. на суму грн. | ||||||||||||||||
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BC857B-QR | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 220...475 Mounting: SMD Kind of package: 7 inch reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74LV165AD,118 | NEXPERIA |
Category: Shift registers Description: IC: digital; 8bit,shift register,parallel in,serial output Type of integrated circuit: digital Mounting: SMD Supply voltage: 1...5.5V DC Operating temperature: -40...125°C Technology: CMOS Kind of package: reel; tape Case: SO16 Family: LV Kind of integrated circuit: 8bit; parallel in; serial output; shift register |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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74LV165APW,118 | NEXPERIA |
Category: Shift registers Description: IC: digital; 8bit,shift register,parallel in,serial output Type of integrated circuit: digital Kind of integrated circuit: 8bit; parallel in; serial output; shift register Technology: CMOS Mounting: SMD Case: TSSOP16 Family: LV Operating temperature: -40...125°C Supply voltage: 1...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BAT54SW-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSS192,115 | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89 Case: SC62; SOT89 Gate charge: 5nC Polarisation: unipolar Drain current: -0.12A Kind of channel: enhancement Drain-source voltage: -240V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 25Ω Mounting: SMD Power dissipation: 0.56W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PMEG3050BEP-QX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape Mounting: SMD Max. forward impulse current: 70A Max. forward voltage: 0.45V Power dissipation: 2.1W Max. off-state voltage: 30V Load current: 5A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 0.25mA Case: CFP5; SOD128 Capacitance: 800pF Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
 |
PTVS3V3S1UR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.150°C Type of diode: TVS Breakdown voltage: 5.6V Semiconductor structure: unidirectional Mounting: SMD Case: SOD123W Max. off-state voltage: 3.3V Leakage current: 5µA Operating temperature: max. 150°C Max. forward impulse current: 43.8A Peak pulse power dissipation: 0.4kW |
на замовлення 20019 шт: термін постачання 14-30 дні (днів) |
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BCV27,215 | NEXPERIA |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW Mounting: SMD Collector-emitter voltage: 30V Power dissipation: 0.25W Polarisation: bipolar Kind of transistor: Darlington Type of transistor: NPN Kind of package: 7 inch reel; tape Case: SOT23; TO236AB Frequency: 220MHz Collector current: 0.5A |
на замовлення 8895 шт: термін постачання 14-30 дні (днів) |
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PEMH15,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ Mounting: SMD Collector-emitter voltage: 50V Base resistor: 4.7kΩ Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: BRT Application: automotive industry Type of transistor: NPN x2 Current gain: 30 Kind of package: reel; tape Base-emitter resistor: 4.7kΩ Case: SOT666 Frequency: 230MHz Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PMBT3904,235 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: 11 inch reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C30-QR | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84-C30,235 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOT23 Max. load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| PMEG45T15EPDAZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 21A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.405V
Leakage current: 22mA
Max. forward impulse current: 210A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 21A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.405V
Leakage current: 22mA
Max. forward impulse current: 210A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| PMEG45T15EPDZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.58V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.58V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PMEG45U10EPDAZ |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| PUSB3FR4Z |
|
Виробник: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4
Type of diode: TVS array
Breakdown voltage: 9V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: DFN2510A-10; SOT1176-1
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 0.34pF
Application: HDMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4
Type of diode: TVS array
Breakdown voltage: 9V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: DFN2510A-10; SOT1176-1
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 0.34pF
Application: HDMI
на замовлення 10608 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 39+ | 10.92 грн |
| 44+ | 9.73 грн |
| 100+ | 8.13 грн |
| 250+ | 7.28 грн |
| 500+ | 6.77 грн |
| 1000+ | 6.52 грн |
| BUK9609-40B,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W
Mounting: SMD
Pulsed drain current: 383A
Power dissipation: 157W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 17.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W
Mounting: SMD
Pulsed drain current: 383A
Power dissipation: 157W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 17.1mΩ
товару немає в наявності
В кошику
од. на суму грн.
| BUK9609-75A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 230W
Polarisation: unipolar
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 18.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 230W
Polarisation: unipolar
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 18.9mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| PSMN6R5-80PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.11 грн |
| 10+ | 187.93 грн |
| PSMN2R2-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R6-40YS,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R8-40PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R1-40PLQ |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R0-60PS,127 |
|
Виробник: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PSMN2R7-30BL,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R8-80BS,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-100SSFJ |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R4-30MLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Features of semiconductor devices: logic level
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| PSMN2R0-25MLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R9-25YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-25YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R0-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R0-40YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R2-25YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R2-40YSDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R4-30YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| PSMN2R5-30YL,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R5-40YLDX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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| PSMN2R6-30YLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R8-25MLC,115 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN020-30MLCX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 74LVC2G241DP,125 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
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| 74LVC2G241GS,115 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,non-inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; non-inverting
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,non-inverting,line driver; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; non-inverting
Technology: CMOS
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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| 74LVC2G241GT,115 |
|
Виробник: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 2; IN: 2; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Number of channels: 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON8
Manufacturer series: Mini Logic
Operating temperature: -40...125°C
Kind of output: 3-state
Family: LVC
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
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Мінімальне замовлення: 5000 шт
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| 2PA1774SMB,315 |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 590mW
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Current gain: 270...560
Collector current: 0.1A
Collector-emitter voltage: 40V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 590mW; DFN1006B-3,SOT883B
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 590mW
Case: DFN1006B-3; SOT883B
Mounting: SMD
Kind of package: reel; tape
Current gain: 270...560
Collector current: 0.1A
Collector-emitter voltage: 40V
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Мінімальне замовлення: 10000 шт
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| BZX84-B5V6,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 5235 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 80+ | 5.33 грн |
| 100+ | 4.66 грн |
| BZB84-B5V6,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.3W
Max. load current: 0.2A
Zener voltage: 5.6V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±2%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.3W
Max. load current: 0.2A
Zener voltage: 5.6V
на замовлення 320 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.47 грн |
| 93+ | 4.57 грн |
| 104+ | 4.11 грн |
| BZB84-C5V6,215 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.3W
Max. load current: 0.2A
Zener voltage: 5.6V
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; Ifmax: 200mA; reel,tape
Type of diode: Zener
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Power dissipation: 0.3W
Max. load current: 0.2A
Zener voltage: 5.6V
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| BZX84-B5V6-QR |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 5.6V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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| NZX5V6D,133 |
|
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SOD27; single diode; 250mA; Ufmax: 1.5V
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: SOD27
Mounting: THT
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Max. load current: 0.25A
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 5.6V; SOD27; single diode; 250mA; Ufmax: 1.5V
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Case: SOD27
Mounting: THT
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward voltage: 1.5V
Max. load current: 0.25A
на замовлення 7827 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 59+ | 7.20 грн |
| 100+ | 6.26 грн |
| 74HCT32DB,112 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 4.5÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SSOP14
Operating temperature: -40...125°C
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: tube
на замовлення 387 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.50 грн |
| 33+ | 12.95 грн |
| 36+ | 12.02 грн |
| 78+ | 11.43 грн |
| 156+ | 10.33 грн |
| 74HCT32PW,118 |
|
Виробник: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| 74ALVCH16373DGG:11 |
|
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 16bit,3-state,D latch; Ch: 2; IN: 10; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; D latch
Number of channels: 2
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: ALVCH
Supply voltage: 1.2...3.6V DC
Number of inputs: 10
Technology: CMOS; TTL
Category: Latches
Description: IC: digital; 16bit,3-state,D latch; Ch: 2; IN: 10; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; D latch
Number of channels: 2
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Family: ALVCH
Supply voltage: 1.2...3.6V DC
Number of inputs: 10
Technology: CMOS; TTL
на замовлення 1969 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.31 грн |
| 10+ | 66.03 грн |
| 39+ | 61.80 грн |
| 117+ | 58.41 грн |
| 390+ | 52.48 грн |
| 74HCT259BQ,115 |
|
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; TTL; 4.5÷5.5VDC; SMD; DHVQFN16
Operating temperature: -40...125°C
Technology: TTL
Number of inputs: 6
Kind of package: reel; tape
Case: DHVQFN16
Family: HCT
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; 8bit,latch; Ch: 1; IN: 6; TTL; 4.5÷5.5VDC; SMD; DHVQFN16
Operating temperature: -40...125°C
Technology: TTL
Number of inputs: 6
Kind of package: reel; tape
Case: DHVQFN16
Family: HCT
Kind of integrated circuit: 8bit; latch
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
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Мінімальне замовлення: 3000 шт
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| 74ALVCH16843DGGY |
|
Виробник: NEXPERIA
Category: Latches
Description: IC: digital; 18bit,3-state,bus interface,D latch; Ch: 2; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus interface; D latch
Number of channels: 2
Technology: CMOS; TTL
Supply voltage: 1.2...3.6V DC
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Family: ALVCH
Kind of output: 3-state
Kind of package: reel; tape
Number of inputs: 13
Category: Latches
Description: IC: digital; 18bit,3-state,bus interface,D latch; Ch: 2; IN: 13
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 18bit; bus interface; D latch
Number of channels: 2
Technology: CMOS; TTL
Supply voltage: 1.2...3.6V DC
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Family: ALVCH
Kind of output: 3-state
Kind of package: reel; tape
Number of inputs: 13
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| BZX79-C16,143 |
|
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 16V; DO35; single diode; 250mA; Ammo Pack
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. load current: 0.25A
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 16V; DO35; single diode; 250mA; Ammo Pack
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. load current: 0.25A
на замовлення 4239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.65 грн |
| 143+ | 2.96 грн |
| 166+ | 2.56 грн |
| BZX79-C10,133 |
|
Виробник: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 10V; DO35; single diode; 250mA; Ufmax: 0.9V
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.25A
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 10V; DO35; single diode; 250mA; Ufmax: 0.9V
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. load current: 0.25A
Kind of package: Ammo Pack
товару немає в наявності
Мінімальне замовлення: 10000 шт
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од. на суму грн.
| PSSI2021SAY,115 |
|
Виробник: NEXPERIA
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
Category: Voltage regulators - PWM circuits
Description: IC: driver; CV/CC controller; SOT353; 50mA; 5÷75VDC
Type of integrated circuit: driver
Kind of integrated circuit: CV/CC controller
Case: SOT353
Output current: 50mA
Supply voltage: 5...75V DC
Mounting: SMD
Operating temperature: -65...150°C
Application: for LED applications
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| BZV55-C22,135 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 22V; SMD; SOD80C; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 22V; SMD; SOD80C; Ifmax: 250mA; single diode
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику
од. на суму грн.
| BC857B-QR |
|
Виробник: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
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| 74LV165AD,118 |
|
Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Family: LV
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1...5.5V DC
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: SO16
Family: LV
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 74LV165APW,118 |
|
Виробник: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: LV
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of package: reel; tape
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: LV
Operating temperature: -40...125°C
Supply voltage: 1...5.5V DC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BAT54SW-QX |
|
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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| BSS192,115 |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Case: SC62; SOT89
Gate charge: 5nC
Polarisation: unipolar
Drain current: -0.12A
Kind of channel: enhancement
Drain-source voltage: -240V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 25Ω
Mounting: SMD
Power dissipation: 0.56W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Case: SC62; SOT89
Gate charge: 5nC
Polarisation: unipolar
Drain current: -0.12A
Kind of channel: enhancement
Drain-source voltage: -240V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 25Ω
Mounting: SMD
Power dissipation: 0.56W
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| PMEG3050BEP-QX |
Виробник: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Mounting: SMD
Max. forward impulse current: 70A
Max. forward voltage: 0.45V
Power dissipation: 2.1W
Max. off-state voltage: 30V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.25mA
Case: CFP5; SOD128
Capacitance: 800pF
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Mounting: SMD
Max. forward impulse current: 70A
Max. forward voltage: 0.45V
Power dissipation: 2.1W
Max. off-state voltage: 30V
Load current: 5A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 0.25mA
Case: CFP5; SOD128
Capacitance: 800pF
Type of diode: Schottky rectifying
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| PTVS3V3S1UR,115 |
|
Виробник: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 3.3V
Leakage current: 5µA
Operating temperature: max. 150°C
Max. forward impulse current: 43.8A
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 5.6V; 43.8A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Breakdown voltage: 5.6V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD123W
Max. off-state voltage: 3.3V
Leakage current: 5µA
Operating temperature: max. 150°C
Max. forward impulse current: 43.8A
Peak pulse power dissipation: 0.4kW
на замовлення 20019 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 21+ | 20.40 грн |
| 25+ | 17.10 грн |
| 50+ | 14.98 грн |
| 100+ | 13.21 грн |
| 500+ | 10.24 грн |
| 1000+ | 8.97 грн |
| 3000+ | 8.47 грн |
| BCV27,215 |
|
Виробник: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Frequency: 220MHz
Collector current: 0.5A
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 250mW
Mounting: SMD
Collector-emitter voltage: 30V
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: Darlington
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Frequency: 220MHz
Collector current: 0.5A
на замовлення 8895 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 32+ | 14.59 грн |
| 43+ | 10.07 грн |
| 60+ | 7.14 грн |
| 100+ | 5.66 грн |
| 250+ | 5.21 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.47 грн |
| 3000+ | 4.40 грн |
| PEMH15,115 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: NPN x2
Current gain: 30
Kind of package: reel; tape
Base-emitter resistor: 4.7kΩ
Case: SOT666
Frequency: 230MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT666; R1: 4.7kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: BRT
Application: automotive industry
Type of transistor: NPN x2
Current gain: 30
Kind of package: reel; tape
Base-emitter resistor: 4.7kΩ
Case: SOT666
Frequency: 230MHz
Collector current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
| PMBT3904,235 |
|
Виробник: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: 11 inch reel; tape
Frequency: 300MHz
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C30-QR |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| BZX84-C30,235 |
|
Виробник: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 30V; SMD; SOT23; Ifmax: 200mA; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOT23
Max. load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.