| Фото | Назва | Виробник | Інформація |
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NCP51152BADR2G | onsemi |
 Description: ISOLATED SINGLE CHANNEL GATE DRIPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
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NCP51152CADR2G | onsemi |
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED S Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 4.5A, 9A Technology: Capacitive Coupling Current - Output High, Low: 4.5A, 9A Voltage - Isolation: 3750Vrms Approval Agency: CQC, UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 8.3ns Common Mode Transient Immunity (Min): 200kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Pulse Width Distortion (Max): 5ns Number of Channels: 1 Voltage - Output Supply: 9.5V ~ 30V |
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| 1V5KE56A | onsemi |
Description: TVS DIODE 47.8VWM 77VC DO201AE Packaging: Bulk Package / Case: DO-201AE, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.5A Voltage - Reverse Standoff (Typ): 47.8V Supplier Device Package: DO-201AE Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 77V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
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| NLVACT573DWR2G | onsemi |
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 3ns Supplier Device Package: 20-SOIC |
на замовлення 23768 шт: термін постачання 21-31 дні (днів) |
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FCAS20DN60BB | onsemi |
Description: MODULE SPM FOR SRM 600V SPM20-BC Packaging: Tube Package / Case: 20-PowerSIP Module, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 1500Vrms Current: 20 A Voltage: 600 V |
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FCAS30DN60BB | onsemi |
Description: MODULE SPM FOR SRM 600V SPM20-BC Packaging: Tube Package / Case: 20-PowerSIP Module, Formed Leads Mounting Type: Through Hole |
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| STK5MFU3C1A-E | onsemi |
Description: MOD IPM 30A 600V 2-IN-1 23SIP Packaging: Tube Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 53 A Voltage: 600 V |
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NTB5D0N15MC | onsemi |
Description: MOSFET - N-CHANNEL SHIELDED GATE Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 532µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NTB5D0N15MC | onsemi |
Description: MOSFET - N-CHANNEL SHIELDED GATE Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V Power Dissipation (Max): 3.8W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 532µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V |
на замовлення 1302 шт: термін постачання 21-31 дні (днів) |
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| AR0543CSSC25SMKA0-CR | onsemi |
Description: IMAGE SENSOR Packaging: Tray Package / Case: 54-WFBGA, CSPBGA Type: CMOS Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.15V ~ 1.25V Pixel Size: 1.4µm x 1.4µm Active Pixel Array: 2592H x 1944V Supplier Device Package: 54-ODCSP (5.26x5.07) Frames per Second: 15.0 |
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SBT250-04Y-DL-E | onsemi |
Description: DIODE ARRAY SCHOT 40V 25A SMP-FD Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 25A Supplier Device Package: SMP-FD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A Current - Reverse Leakage @ Vr: 300 µA @ 20 V |
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SN74LS299N | onsemi |
Description: SHIFT REGISTER SINGLE 8-BIT Packaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: Tri-State Mounting Type: Through Hole Number of Elements: 1 Function: Universal Logic Type: Shift Register Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Supplier Device Package: 20-PDIP Number of Bits per Element: 8 |
на замовлення 22267 шт: термін постачання 21-31 дні (днів) |
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FDD2512 | onsemi |
Description: MOSFET N-CH 150V 6.7A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V Power Dissipation (Max): 42W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V |
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FDD2612 | onsemi |
Description: MOSFET N-CH 200V 4.9A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V Power Dissipation (Max): 42W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V |
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FDD20AN06A0-F085 | onsemi |
Description: MOSFET N-CH 60V 8A/45A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Qualification: AEC-Q101 |
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FQP5N50C | onsemi |
Description: MOSFET N-CH 500V 5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V |
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| HLMP1719MP4B | onsemi |
Description: LED CBI 3MM YELLOW DIFF RA Packaging: Bulk Current: 2mA Color: Yellow Voltage Rating: 1.9V Mounting Type: Through Hole, Right Angle Millicandela Rating: 2.1mcd Configuration: Single Viewing Angle: 50° Lens Type: Diffused, Tinted Wavelength - Peak: 585nm Lens Style: Round with Domed Top Lens Size: 3mm, T-1 |
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SMBT3906DW3T1G | onsemi |
Description: TRANS 2PNP 40V 200MA SC88/SC70 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 40V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
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MMBD352LT3G | onsemi |
Description: RF DIODE STANDAR 7V 225MW SOT-23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Standard - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 225 mW |
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FDH5500 | onsemi |
Description: MOSFET N-CH 55V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V |
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NTLGF3501NT1G | onsemi |
Description: MOSFET N-CH 20V 2.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V |
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NTLGF3501NT2G | onsemi |
Description: MOSFET N-CH 20V 2.8A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 6-DFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V |
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FPDB30PH60 | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MOD Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
на замовлення 138 шт: термін постачання 21-31 дні (днів) |
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FPDB30PH60 | onsemi |
Description: IGBT IPM 600V 20A 27-PWRDIP MOD Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 2 Phase Voltage - Isolation: 2500Vrms Current: 20 A Voltage: 600 V |
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FQP4N20L | onsemi |
Description: MOSFET N-CH 200V 3.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
на замовлення 65 шт: термін постачання 21-31 дні (днів) |
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MJW18020 | onsemi |
Description: TRANS NPN 450V 30A TO-247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V Frequency - Transition: 13MHz Supplier Device Package: TO-247-3 Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 250 W |
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CD4024BCM | onsemi |
Description: IC BINARY COUNTER 7-BIT 14SOIC Packaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Negative Edge Supplier Device Package: 14-SOIC Voltage - Supply: 3 V ~ 15 V Count Rate: 12 MHz Number of Bits per Element: 7 |
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MC100H603FN | onsemi |
Description: IC TRANSLATOR UNIDIR 28PLCC Packaging: Tube Package / Case: 28-LCC (J-Lead) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TA) Supplier Device Package: 28-PLCC (11.51x11.51) Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 9 Input Signal: ECL Number of Circuits: 1 |
на замовлення 1679 шт: термін постачання 21-31 дні (днів) |
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MC100H603FNG | onsemi |
Description: IC TRANSLATOR UNIDIR 28PLCC Packaging: Tube Package / Case: 28-LCC (J-Lead) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: 0°C ~ 85°C (TA) Supplier Device Package: 28-PLCC (11.51x11.51) Channel Type: Unidirectional Output Signal: TTL Translator Type: Mixed Signal Channels per Circuit: 9 Input Signal: ECL Number of Circuits: 1 |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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| NVCR8LS4D1N15MCA | onsemi |
Description: POWER MOSFET, N-CHANNEL, 150 V, Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tj) Vgs(th) (Max) @ Id: 4.5V @ 584µA Supplier Device Package: Wafer Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V Qualification: AEC-Q101 |
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| PRISM1-ADPTR-NVDM1-GEVK | onsemi |
Description: PRISM MODULE TO RASPBERRY NVIDIA Packaging: Box |
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FAN48630BUC315X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSP Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP (1.78x1.78) Synchronous Rectifier: Yes Voltage - Input (Min): 2.35V Voltage - Output (Min/Fixed): 3.15V, 3.33V |
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FAN48630BUC315X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSP Packaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLCSP Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP (1.78x1.78) Synchronous Rectifier: Yes Voltage - Input (Min): 2.35V Voltage - Output (Min/Fixed): 3.15V, 3.33V |
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| FAN48630BUC31JX | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSP Packaging: Tape & Reel (TR) Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP Synchronous Rectifier: Yes Voltage - Input (Min): 2.35V |
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| FAN48630BUC31JX | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSP Packaging: Cut Tape (CT) Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2.5MHz Voltage - Input (Max): 5.5V Topology: Boost Supplier Device Package: 16-WLCSP Synchronous Rectifier: Yes Voltage - Input (Min): 2.35V |
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MM74HC08SJX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOP Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
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В кошику од. на суму грн. | ||||||||||||||
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MM74HC08SJX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NL17SH00P5T5G | onsemi |
Description: IC GATE NAND 1CH 2-INP SOT953 Packaging: Bulk Package / Case: SOT-953 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: SOT-953 Input Logic Level - High: 1.5V ~ 3.85V Input Logic Level - Low: 0.5V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 200000 шт: термін постачання 21-31 дні (днів) |
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SMBZ1477LT1G | onsemi |
Description: DIODE ZENER .225W SPCL SOT23 Packaging: Bulk |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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SMBZ1477LT1 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 57000 шт: термін постачання 21-31 дні (днів) |
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| SMBZ1477LT3 | onsemi |
Description: DIODE ZENER .225W SOT23 SPCL Packaging: Bulk |
на замовлення 40000 шт: термін постачання 21-31 дні (днів) |
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MBRD360T4 | onsemi |
Description: DIODE SCHOTTKY 60V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DPAK Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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N24RF64DTPT3G | onsemi |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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N24RF64DTPT3G | onsemi |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP |
на замовлення 2930 шт: термін постачання 21-31 дні (днів) |
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BZX79C22 | onsemi |
Description: DIODE ZENER 22V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTMFD5C674NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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NTMFD5C674NLT1G | onsemi |
Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
на замовлення 1835 шт: термін постачання 21-31 дні (днів) |
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NVMFD6H840NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 14A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NVMFD6H840NLWFT1G | onsemi |
Description: MOSFET 2N-CH 80V 14A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
на замовлення 837 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H858NLT1G | onsemi |
Description: T8 80V LL SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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NTMFS6H858NLT1G | onsemi |
Description: T8 80V LL SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 2V @ 30µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V |
на замовлення 3855 шт: термін постачання 21-31 дні (днів) |
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SZMMSZ5245BT3 | onsemi |
Description: DIODE ZENER 15V 500MW SOD123 Packaging: Bulk Tolerance: ±5% Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOD-123 Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138SJX | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138SJX | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138PC | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74ACT138SJ | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP Packaging: Tube Package / Case: 16-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74ACT138DR2G-Q | onsemi |
Description: IC DECODER/DEMUX 1 X 3:8 16-SOIC Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 3:8 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NCP605MN18T2G | onsemi |
Description: IC REG LINEAR 1.8V 500MA 6DFN Packaging: Bulk Package / Case: 6-VDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 180 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 6-DFN (3x3.3) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.3V @ 500mA Protection Features: Over Temperature, Short Circuit |
на замовлення 848 шт: термін постачання 21-31 дні (днів) |
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| NCP1561DR2 | onsemi |
Description: IC CTRLR DUAL PWM 250KHZ 16-SOIC Packaging: Bulk |
на замовлення 17500 шт: термін постачання 21-31 дні (днів) |
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NCP1561DR2G | onsemi |
Description: SWITCHING CONTROLLER Packaging: Bulk |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| NCP51152BADR2G |
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Виробник: onsemi
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: ISOLATED SINGLE CHANNEL GATE DRI
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
товару немає в наявності
В кошику
од. на суму грн.
| NCP51152CADR2G |
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Виробник: onsemi
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED S
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
Description: 3.75 KVRMS, 4.5-A/9-A ISOLATED S
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 4.5A, 9A
Technology: Capacitive Coupling
Current - Output High, Low: 4.5A, 9A
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 8.3ns
Common Mode Transient Immunity (Min): 200kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Pulse Width Distortion (Max): 5ns
Number of Channels: 1
Voltage - Output Supply: 9.5V ~ 30V
товару немає в наявності
В кошику
од. на суму грн.
| 1V5KE56A |
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Виробник: onsemi
Description: TVS DIODE 47.8VWM 77VC DO201AE
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 47.8VWM 77VC DO201AE
Packaging: Bulk
Package / Case: DO-201AE, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.5A
Voltage - Reverse Standoff (Typ): 47.8V
Supplier Device Package: DO-201AE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 77V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| NLVACT573DWR2G |
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Виробник: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 3ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP SGL 8:8 20SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 3ns
Supplier Device Package: 20-SOIC
на замовлення 23768 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 666+ | 33.45 грн |
| FCAS20DN60BB |
|
Виробник: onsemi
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| FCAS30DN60BB |
|
Виробник: onsemi
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
Description: MODULE SPM FOR SRM 600V SPM20-BC
Packaging: Tube
Package / Case: 20-PowerSIP Module, Formed Leads
Mounting Type: Through Hole
товару немає в наявності
В кошику
од. на суму грн.
| STK5MFU3C1A-E |
|
Виробник: onsemi
Description: MOD IPM 30A 600V 2-IN-1 23SIP
Packaging: Tube
Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 53 A
Voltage: 600 V
Description: MOD IPM 30A 600V 2-IN-1 23SIP
Packaging: Tube
Package / Case: 28-PowerSIP Module, 23 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 53 A
Voltage: 600 V
товару немає в наявності
В кошику
од. на суму грн.
| NTB5D0N15MC |
|
Виробник: onsemi
Description: MOSFET - N-CHANNEL SHIELDED GATE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Description: MOSFET - N-CHANNEL SHIELDED GATE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 188.45 грн |
| NTB5D0N15MC |
|
Виробник: onsemi
Description: MOSFET - N-CHANNEL SHIELDED GATE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
Description: MOSFET - N-CHANNEL SHIELDED GATE
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 97A, 10V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 532µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 75 V
на замовлення 1302 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 394.97 грн |
| 10+ | 270.15 грн |
| 100+ | 201.83 грн |
| AR0543CSSC25SMKA0-CR |
|
Виробник: onsemi
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 54-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.15V ~ 1.25V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 54-ODCSP (5.26x5.07)
Frames per Second: 15.0
Description: IMAGE SENSOR
Packaging: Tray
Package / Case: 54-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.15V ~ 1.25V
Pixel Size: 1.4µm x 1.4µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 54-ODCSP (5.26x5.07)
Frames per Second: 15.0
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| SBT250-04Y-DL-E |
|
Виробник: onsemi
Description: DIODE ARRAY SCHOT 40V 25A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
Description: DIODE ARRAY SCHOT 40V 25A SMP-FD
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: SMP-FD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 20 V
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| SN74LS299N |
|
Виробник: onsemi
Description: SHIFT REGISTER SINGLE 8-BIT
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
Description: SHIFT REGISTER SINGLE 8-BIT
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Tri-State
Mounting Type: Through Hole
Number of Elements: 1
Function: Universal
Logic Type: Shift Register
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: 20-PDIP
Number of Bits per Element: 8
на замовлення 22267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 81+ | 278.33 грн |
| FDD2512 |
|
Виробник: onsemi
Description: MOSFET N-CH 150V 6.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V
Power Dissipation (Max): 42W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Description: MOSFET N-CH 150V 6.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2.2A, 10V
Power Dissipation (Max): 42W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
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| FDD2612 |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 4.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Power Dissipation (Max): 42W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Description: MOSFET N-CH 200V 4.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 720mOhm @ 1.5A, 10V
Power Dissipation (Max): 42W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
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| FDD20AN06A0-F085 |
|
Виробник: onsemi
Description: MOSFET N-CH 60V 8A/45A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 8A/45A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Qualification: AEC-Q101
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| FQP5N50C |
|
Виробник: onsemi
Description: MOSFET N-CH 500V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Description: MOSFET N-CH 500V 5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
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| HLMP1719MP4B |
|
Виробник: onsemi
Description: LED CBI 3MM YELLOW DIFF RA
Packaging: Bulk
Current: 2mA
Color: Yellow
Voltage Rating: 1.9V
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 2.1mcd
Configuration: Single
Viewing Angle: 50°
Lens Type: Diffused, Tinted
Wavelength - Peak: 585nm
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
Description: LED CBI 3MM YELLOW DIFF RA
Packaging: Bulk
Current: 2mA
Color: Yellow
Voltage Rating: 1.9V
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 2.1mcd
Configuration: Single
Viewing Angle: 50°
Lens Type: Diffused, Tinted
Wavelength - Peak: 585nm
Lens Style: Round with Domed Top
Lens Size: 3mm, T-1
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| SMBT3906DW3T1G |
|
Виробник: onsemi
Description: TRANS 2PNP 40V 200MA SC88/SC70
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 40V 200MA SC88/SC70
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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| MMBD352LT3G |
|
Виробник: onsemi
Description: RF DIODE STANDAR 7V 225MW SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
Description: RF DIODE STANDAR 7V 225MW SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Standard - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
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| FDH5500 |
|
Виробник: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 268 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3565 pF @ 25 V
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| NTLGF3501NT1G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
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| NTLGF3501NT2G |
|
Виробник: onsemi
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 4.5V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 275 pF @ 10 V
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| FPDB30PH60 |
|
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
на замовлення 138 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 2194.69 грн |
| FPDB30PH60 |
|
Виробник: onsemi
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 2 Phase
Voltage - Isolation: 2500Vrms
Current: 20 A
Voltage: 600 V
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| FQP4N20L |
|
Виробник: onsemi
Description: MOSFET N-CH 200V 3.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 200V 3.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.9A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
на замовлення 65 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.35 грн |
| 50+ | 59.80 грн |
| MJW18020 |
|
Виробник: onsemi
Description: TRANS NPN 450V 30A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
Description: TRANS NPN 450V 30A TO-247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
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| CD4024BCM |
|
Виробник: onsemi
Description: IC BINARY COUNTER 7-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 3 V ~ 15 V
Count Rate: 12 MHz
Number of Bits per Element: 7
Description: IC BINARY COUNTER 7-BIT 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-SOIC
Voltage - Supply: 3 V ~ 15 V
Count Rate: 12 MHz
Number of Bits per Element: 7
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| MC100H603FN |
|
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
на замовлення 1679 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 301.02 грн |
| MC100H603FNG |
|
Виробник: onsemi
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
Description: IC TRANSLATOR UNIDIR 28PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 85°C (TA)
Supplier Device Package: 28-PLCC (11.51x11.51)
Channel Type: Unidirectional
Output Signal: TTL
Translator Type: Mixed Signal
Channels per Circuit: 9
Input Signal: ECL
Number of Circuits: 1
на замовлення 481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 38+ | 601.30 грн |
| NVCR8LS4D1N15MCA |
|
Виробник: onsemi
Description: POWER MOSFET, N-CHANNEL, 150 V,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: Wafer
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Qualification: AEC-Q101
Description: POWER MOSFET, N-CHANNEL, 150 V,
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tj)
Vgs(th) (Max) @ Id: 4.5V @ 584µA
Supplier Device Package: Wafer
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7490 pF @ 75 V
Qualification: AEC-Q101
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| FAN48630BUC315X |
|
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Voltage - Output (Min/Fixed): 3.15V, 3.33V
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| FAN48630BUC315X |
|
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Voltage - Output (Min/Fixed): 3.15V, 3.33V
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLCSP
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP (1.78x1.78)
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Voltage - Output (Min/Fixed): 3.15V, 3.33V
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| FAN48630BUC31JX |
|
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Tape & Reel (TR)
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Tape & Reel (TR)
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
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| FAN48630BUC31JX |
|
Виробник: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Cut Tape (CT)
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
Description: IC REG BOOST PROG 1.5A 16WLCSP
Packaging: Cut Tape (CT)
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2.5MHz
Voltage - Input (Max): 5.5V
Topology: Boost
Supplier Device Package: 16-WLCSP
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.35V
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| MM74HC08SJX |
|
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| MM74HC08SJX |
|
Виробник: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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| NL17SH00P5T5G |
|
Виробник: onsemi
Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 1CH 2-INP SOT953
Packaging: Bulk
Package / Case: SOT-953
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: SOT-953
Input Logic Level - High: 1.5V ~ 3.85V
Input Logic Level - Low: 0.5V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 200000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5657+ | 3.72 грн |
| SMBZ1477LT1G |
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.23 грн |
| SMBZ1477LT1 |
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.23 грн |
| SMBZ1477LT3 |
на замовлення 40000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11539+ | 2.23 грн |
| MBRD360T4 |
|
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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| N24RF64DTPT3G |
|
Виробник: onsemi
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
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| N24RF64DTPT3G |
|
Виробник: onsemi
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
на замовлення 2930 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 107.72 грн |
| 10+ | 78.85 грн |
| 25+ | 71.11 грн |
| 100+ | 57.56 грн |
| 250+ | 52.60 грн |
| 500+ | 49.35 грн |
| 1000+ | 45.73 грн |
| BZX79C22 |
|
Виробник: onsemi
Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Description: DIODE ZENER 22V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
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| NTMFD5C674NLT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 23.35 грн |
| NTMFD5C674NLT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Description: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
на замовлення 1835 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.30 грн |
| 10+ | 50.89 грн |
| 100+ | 33.55 грн |
| 500+ | 24.50 грн |
| NVMFD6H840NLWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| NVMFD6H840NLWFT1G |
|
Виробник: onsemi
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 232.61 грн |
| 10+ | 146.27 грн |
| 100+ | 101.89 грн |
| 500+ | 82.72 грн |
| NTMFS6H858NLT1G |
|
Виробник: onsemi
Description: T8 80V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Description: T8 80V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 23.81 грн |
| 3000+ | 21.05 грн |
| NTMFS6H858NLT1G |
|
Виробник: onsemi
Description: T8 80V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
Description: T8 80V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 623 pF @ 40 V
на замовлення 3855 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 85.86 грн |
| 10+ | 52.16 грн |
| 100+ | 34.33 грн |
| 500+ | 25.01 грн |
| SZMMSZ5245BT3 |
|
Виробник: onsemi
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
Description: DIODE ZENER 15V 500MW SOD123
Packaging: Bulk
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
| 74ACT138SJX |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
товару немає в наявності
В кошику
од. на суму грн.
| 74ACT138SJX |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
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В кошику
од. на суму грн.
| 74ACT138PC |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC DECODER/DEMUX 1 X 3:8 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
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В кошику
од. на суму грн.
| 74ACT138SJ |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
Description: IC DECODER/DEMUX 1 X 3:8 16-SOP
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOP
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В кошику
од. на суму грн.
| MC74ACT138DR2G-Q |
|
Виробник: onsemi
Description: IC DECODER/DEMUX 1 X 3:8 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
Description: IC DECODER/DEMUX 1 X 3:8 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| NCP605MN18T2G |
|
Виробник: onsemi
Description: IC REG LINEAR 1.8V 500MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 1.8V 500MA 6DFN
Packaging: Bulk
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.3V @ 500mA
Protection Features: Over Temperature, Short Circuit
на замовлення 848 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 848+ | 34.93 грн |
| NCP1561DR2 |
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 180+ | 124.12 грн |
| NCP1561DR2G |
|
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 180+ | 124.12 грн |