Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FAN3229TMX | ONSEMI |
![]() Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Impulse rise time: 22ns Pulse fall time: 17ns кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3268TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -2.4...1.6A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting Impulse rise time: 22ns Pulse fall time: 17ns кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN3278TMX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-/low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -1.5...1A Number of channels: 2 Supply voltage: 8...27V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: inverting; non-inverting кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN4174IS5X | ONSEMI |
![]() Description: IC: operational amplifier; 4MHz; 2.3÷5.25V; Ch: 1; SOT23-5; 5pA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 1 Case: SOT23-5 Slew rate: 3V/μs Operating temperature: -40...125°C Input offset voltage: 6mV Integrated circuit features: rail-to-rail Kind of package: reel; tape Input bias current: 5pA Operating voltage: 2.3...5.25V кількість в упаковці: 1 шт |
на замовлення 1571 шт: термін постачання 14-21 дні (днів) |
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FAN5333ASX | ONSEMI |
![]() Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: SOT23-5 Output current: 65mA Output voltage: 1.8...30V Number of channels: 1 Supply voltage: 1.8...5.5V DC Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Maximum output current: 1.5A Frequency: 1.5MHz кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN5622SX | ONSEMI |
![]() Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSOT23-6 Number of channels: 2 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -40...85°C Interface: SWD Maximum output current: 30mA Integrated circuit features: linear dimming; PWM кількість в упаковці: 1 шт |
на замовлення 2823 шт: термін постачання 14-21 дні (днів) |
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FAN6605MX | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 700mA; 65kHz; Ch: 1; SOP7; flyback; 0÷90% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 0.7A Frequency: 65kHz Number of channels: 1 Case: SOP7 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Duty cycle factor: 0...90% Operating voltage: 11...24V DC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FAN7081MX-GF085 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN73611MX | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN73711MX | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FAN7380MX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8 Case: SOP8 Technology: MillerDrive™ Kind of package: reel; tape Output current: -180...90mA Supply voltage: 10...20V DC Operating temperature: -40...125°C Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Type of integrated circuit: driver Voltage class: 600V Impulse rise time: 230ns Pulse fall time: 90ns Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 1973 шт: термін постачання 14-21 дні (днів) |
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FAN7382M1X | ONSEMI |
![]() Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP14; Ch: 2 Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 140ns Pulse fall time: 80ns Number of channels: 2 Kind of package: reel; tape Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-/low-side Voltage class: 600V Mounting: SMD Operating temperature: -40...125°C Case: SOP14 кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FAN7382MX | ONSEMI |
![]() Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP8; Ch: 2 Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 140ns Pulse fall time: 80ns Number of channels: 2 Kind of package: reel; tape Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-/low-side Voltage class: 600V Mounting: SMD Operating temperature: -40...125°C Case: SOP8 кількість в упаковці: 1 шт |
на замовлення 2103 шт: термін постачання 14-21 дні (днів) |
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FAN73832MX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8 Case: SOP8 Technology: MillerDrive™ Kind of package: reel; tape Output current: -650...350mA Supply voltage: 15...20V DC Operating temperature: -40...125°C Protection: undervoltage UVP Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Mounting: SMD Type of integrated circuit: driver Voltage class: 600V Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 2 кількість в упаковці: 1 шт |
на замовлення 942 шт: термін постачання 14-21 дні (днів) |
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FAN73833MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Mounting: SMD Output current: -650...350mA Case: SOP8 Supply voltage: 11...20V DC Operating temperature: -40...125°C Kind of package: reel; tape Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 2 Protection: undervoltage UVP Technology: MillerDrive™ кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FAN7383MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SOP14 Number of channels: 4 Supply voltage: 15...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 80ns Kind of package: reel; tape Protection: undervoltage UVP Technology: MillerDrive™ Topology: IGBT half-bridge; MOSFET half-bridge Voltage class: 600V Output current: -650...350mA кількість в упаковці: 1 шт |
на замовлення 89 шт: термін постачання 14-21 дні (днів) |
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FAN7385MX | ONSEMI |
![]() Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side Case: SOP14 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Impulse rise time: 90ns Pulse fall time: 70ns Number of channels: 2 Protection: undervoltage UVP Technology: MillerDrive™ Voltage class: 600V Output current: -650...350mA кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN73895MX | ONSEMI |
![]() Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Case: SO28-W Supply voltage: 10...20V DC Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 6 Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Voltage class: 600V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN7390MX | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN7392MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP16 Output current: -3...3A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 45ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN73932MX | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FAN73933MX | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FAN7842MX | ONSEMI |
![]() Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™ Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Technology: MillerDrive™ Case: SOP8 Output current: -650...350mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 140ns Pulse fall time: 80ns Kind of package: reel; tape Voltage class: 200V Protection: undervoltage UVP кількість в упаковці: 3000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCA20N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCA20N60-F109 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCA20N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 98nC Pulsed drain current: 60A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCA36N60NF | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCA47N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCA47N60-F109 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29.7A Pulsed drain current: 141A Power dissipation: 417W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 0.27µC Kind of package: tube Kind of channel: enhancement Technology: SuperFET® кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCA47N60F | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCB070N65S3 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 650V Drain current: 44A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 312W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V кількість в упаковці: 1 шт |
на замовлення 785 шт: термін постачання 14-21 дні (днів) |
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FCB099N65S3 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB110N65F | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB11N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 52nC Pulsed drain current: 33A кількість в упаковці: 800 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB125N65S3 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB199N65S3 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB20N60FTM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCB20N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 12.5A Power dissipation: 208W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 98nC кількість в упаковці: 800 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCB260N65S3 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCB290N80 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD1300N80Z | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD2250N80Z | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD260N65S3 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD3400N80Z | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD380N60E | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCD4N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FCD5N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.9A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCD5N60TM-WS | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD600N60Z | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD600N65S3R0 | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD620N60ZF | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD7N60TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD7N60TM-WS | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCD850N80Z | ONSEMI |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCD900N60Z | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK Pulsed drain current: 13.5A Mounting: SMD Case: DPAK Drain-source voltage: 600V Drain current: 3.5A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Kind of channel: enhancement Gate-source voltage: ±20V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCH023N65S3L4 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 65.8A Pulsed drain current: 300A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 19.5mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCH029N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.8A Pulsed drain current: 200A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23.7mΩ Mounting: THT Gate charge: 201nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FCH040N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 136nC Kind of package: tube Polarisation: unipolar Drain current: 41A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 40mΩ Pulsed drain current: 162.5A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FCH041N60E | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 48.7A Power dissipation: 592W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 285nC Pulsed drain current: 231A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FCH041N60F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 76A Power dissipation: 595W Case: TO247 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 277nC Pulsed drain current: 228A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. |
FAN3229TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 22ns
Pulse fall time: 17ns
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 22ns
Pulse fall time: 17ns
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN3268TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -2.4÷1.6A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -2.4...1.6A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
Impulse rise time: 22ns
Pulse fall time: 17ns
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN3278TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
кількість в упаковці: 2500 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; MillerDrive™; SO8; -1.5÷1A; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -1.5...1A
Number of channels: 2
Supply voltage: 8...27V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting; non-inverting
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN4174IS5X |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; 2.3÷5.25V; Ch: 1; SOT23-5; 5pA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 3V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 5pA
Operating voltage: 2.3...5.25V
кількість в упаковці: 1 шт
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; 2.3÷5.25V; Ch: 1; SOT23-5; 5pA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 1
Case: SOT23-5
Slew rate: 3V/μs
Operating temperature: -40...125°C
Input offset voltage: 6mV
Integrated circuit features: rail-to-rail
Kind of package: reel; tape
Input bias current: 5pA
Operating voltage: 2.3...5.25V
кількість в упаковці: 1 шт
на замовлення 1571 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 61.80 грн |
10+ | 49.66 грн |
43+ | 25.29 грн |
117+ | 23.91 грн |
500+ | 23.73 грн |
3000+ | 22.99 грн |
FAN5333ASX |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT23-5
Output current: 65mA
Output voltage: 1.8...30V
Number of channels: 1
Supply voltage: 1.8...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 1.5A
Frequency: 1.5MHz
кількість в упаковці: 3000 шт
Category: LED drivers
Description: IC: driver; LED driver; SOT23-5; 65mA; 1.8÷30V; Ch: 1; 1.8÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: SOT23-5
Output current: 65mA
Output voltage: 1.8...30V
Number of channels: 1
Supply voltage: 1.8...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 1.5A
Frequency: 1.5MHz
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN5622SX |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Interface: SWD
Maximum output current: 30mA
Integrated circuit features: linear dimming; PWM
кількість в упаковці: 1 шт
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Interface: SWD
Maximum output current: 30mA
Integrated circuit features: linear dimming; PWM
кількість в упаковці: 1 шт
на замовлення 2823 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.94 грн |
10+ | 64.27 грн |
25+ | 51.50 грн |
36+ | 30.16 грн |
98+ | 28.51 грн |
1000+ | 27.77 грн |
3000+ | 27.50 грн |
FAN6605MX |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; Ch: 1; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Number of channels: 1
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Operating voltage: 11...24V DC
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 65kHz; Ch: 1; SOP7; flyback; 0÷90%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Frequency: 65kHz
Number of channels: 1
Case: SOP7
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Duty cycle factor: 0...90%
Operating voltage: 11...24V DC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN7081MX-GF085 |
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Виробник: ONSEMI
FAN7081MX-GF085 MOSFET/IGBT drivers
FAN7081MX-GF085 MOSFET/IGBT drivers
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В кошику
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FAN73611MX |
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Виробник: ONSEMI
FAN73611MX MOSFET/IGBT drivers
FAN73611MX MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
FAN73711MX |
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Виробник: ONSEMI
FAN73711MX MOSFET/IGBT drivers
FAN73711MX MOSFET/IGBT drivers
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В кошику
од. на суму грн.
FAN7380MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -180...90mA
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 600V
Impulse rise time: 230ns
Pulse fall time: 90ns
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -180...90mA
Supply voltage: 10...20V DC
Operating temperature: -40...125°C
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 600V
Impulse rise time: 230ns
Pulse fall time: 90ns
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 1973 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 172.32 грн |
10+ | 105.05 грн |
16+ | 69.89 грн |
43+ | 66.21 грн |
100+ | 64.37 грн |
250+ | 63.45 грн |
FAN7382M1X |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP14; Ch: 2
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP14
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP14; Ch: 2
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP14
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN7382MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP8; Ch: 2
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP8
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; MillerDrive™; SOP8; Ch: 2
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 140ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Voltage class: 600V
Mounting: SMD
Operating temperature: -40...125°C
Case: SOP8
кількість в упаковці: 1 шт
на замовлення 2103 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 183.21 грн |
10+ | 110.78 грн |
15+ | 76.33 грн |
39+ | 71.73 грн |
100+ | 69.89 грн |
250+ | 68.97 грн |
FAN73832MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -650...350mA
Supply voltage: 15...20V DC
Operating temperature: -40...125°C
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 600V
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Case: SOP8
Technology: MillerDrive™
Kind of package: reel; tape
Output current: -650...350mA
Supply voltage: 15...20V DC
Operating temperature: -40...125°C
Protection: undervoltage UVP
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Mounting: SMD
Type of integrated circuit: driver
Voltage class: 600V
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
кількість в упаковці: 1 шт
на замовлення 942 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 102.01 грн |
5+ | 86.90 грн |
16+ | 68.05 грн |
44+ | 64.37 грн |
500+ | 62.53 грн |
FAN73833MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Output current: -650...350mA
Case: SOP8
Supply voltage: 11...20V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Protection: undervoltage UVP
Technology: MillerDrive™
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: SMD
Output current: -650...350mA
Case: SOP8
Supply voltage: 11...20V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Protection: undervoltage UVP
Technology: MillerDrive™
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN7383MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SOP14
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Output current: -650...350mA
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SOP14
Number of channels: 4
Supply voltage: 15...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 80ns
Kind of package: reel; tape
Protection: undervoltage UVP
Technology: MillerDrive™
Topology: IGBT half-bridge; MOSFET half-bridge
Voltage class: 600V
Output current: -650...350mA
кількість в упаковці: 1 шт
на замовлення 89 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 195.10 грн |
10+ | 118.42 грн |
16+ | 68.97 грн |
43+ | 65.29 грн |
500+ | 63.45 грн |
FAN7385MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 90ns
Pulse fall time: 70ns
Number of channels: 2
Protection: undervoltage UVP
Technology: MillerDrive™
Voltage class: 600V
Output current: -650...350mA
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; MillerDrive™; SOP14; Ch: 2; 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
Case: SOP14
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Impulse rise time: 90ns
Pulse fall time: 70ns
Number of channels: 2
Protection: undervoltage UVP
Technology: MillerDrive™
Voltage class: 600V
Output current: -650...350mA
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN73895MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Case: SO28-W
Supply voltage: 10...20V DC
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 6
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Voltage class: 600V
кількість в упаковці: 1 шт
товару немає в наявності
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од. на суму грн.
FAN7390MX |
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Виробник: ONSEMI
FAN7390MX MOSFET/IGBT drivers
FAN7390MX MOSFET/IGBT drivers
товару немає в наявності
В кошику
од. на суму грн.
FAN7392MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP16
Output current: -3...3A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 45ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FAN73932MX |
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Виробник: ONSEMI
FAN73932MX MOSFET/IGBT drivers
FAN73932MX MOSFET/IGBT drivers
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В кошику
од. на суму грн.
FAN73933MX |
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Виробник: ONSEMI
FAN73933MX MOSFET/IGBT drivers
FAN73933MX MOSFET/IGBT drivers
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В кошику
од. на суму грн.
FAN7842MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
кількість в упаковці: 3000 шт
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
кількість в упаковці: 3000 шт
товару немає в наявності
В кошику
од. на суму грн.
FCA20N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCA20N60-F109 |
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Виробник: ONSEMI
FCA20N60-F109 THT N channel transistors
FCA20N60-F109 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCA20N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; Idm: 60A; 208W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 98nC
Pulsed drain current: 60A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCA36N60NF |
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Виробник: ONSEMI
FCA36N60NF THT N channel transistors
FCA36N60NF THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCA47N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCA47N60-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29.7A; Idm: 141A; 417W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29.7A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Technology: SuperFET®
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCA47N60F |
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Виробник: ONSEMI
FCA47N60F THT N channel transistors
FCA47N60F THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB070N65S3 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Drain current: 44A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; 312W; D2PAK
Mounting: SMD
Case: D2PAK
Drain-source voltage: 650V
Drain current: 44A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 312W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
на замовлення 785 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 501.11 грн |
3+ | 374.35 грн |
9+ | 341.17 грн |
500+ | 332.90 грн |
800+ | 327.38 грн |
FCB099N65S3 |
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Виробник: ONSEMI
FCB099N65S3 SMD N channel transistors
FCB099N65S3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB110N65F |
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Виробник: ONSEMI
FCB110N65F SMD N channel transistors
FCB110N65F SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB11N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 33A; 125W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 52nC
Pulsed drain current: 33A
кількість в упаковці: 800 шт
товару немає в наявності
В кошику
од. на суму грн.
FCB125N65S3 |
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Виробник: ONSEMI
FCB125N65S3 SMD N channel transistors
FCB125N65S3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB199N65S3 |
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Виробник: ONSEMI
FCB199N65S3 SMD N channel transistors
FCB199N65S3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB20N60FTM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCB20N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
кількість в упаковці: 800 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12.5A; 208W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12.5A
Power dissipation: 208W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 98nC
кількість в упаковці: 800 шт
товару немає в наявності
В кошику
од. на суму грн.
FCB260N65S3 |
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Виробник: ONSEMI
FCB260N65S3 SMD N channel transistors
FCB260N65S3 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
FCB290N80 |
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Виробник: ONSEMI
FCB290N80 SMD N channel transistors
FCB290N80 SMD N channel transistors
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В кошику
од. на суму грн.
FCD1300N80Z |
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Виробник: ONSEMI
FCD1300N80Z SMD N channel transistors
FCD1300N80Z SMD N channel transistors
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В кошику
од. на суму грн.
FCD2250N80Z |
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Виробник: ONSEMI
FCD2250N80Z SMD N channel transistors
FCD2250N80Z SMD N channel transistors
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В кошику
од. на суму грн.
FCD260N65S3 |
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Виробник: ONSEMI
FCD260N65S3 SMD N channel transistors
FCD260N65S3 SMD N channel transistors
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В кошику
од. на суму грн.
FCD3400N80Z |
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Виробник: ONSEMI
FCD3400N80Z SMD N channel transistors
FCD3400N80Z SMD N channel transistors
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В кошику
од. на суму грн.
FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
FCD4N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; 50W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCD5N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.9A; 54W; DPAK
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.9A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCD5N60TM-WS |
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Виробник: ONSEMI
FCD5N60TM-WS SMD N channel transistors
FCD5N60TM-WS SMD N channel transistors
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В кошику
од. на суму грн.
FCD600N60Z |
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Виробник: ONSEMI
FCD600N60Z SMD N channel transistors
FCD600N60Z SMD N channel transistors
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В кошику
од. на суму грн.
FCD600N65S3R0 |
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Виробник: ONSEMI
FCD600N65S3R0 SMD N channel transistors
FCD600N65S3R0 SMD N channel transistors
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В кошику
од. на суму грн.
FCD620N60ZF |
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Виробник: ONSEMI
FCD620N60ZF SMD N channel transistors
FCD620N60ZF SMD N channel transistors
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В кошику
од. на суму грн.
FCD7N60TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
FCD7N60TM-WS |
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Виробник: ONSEMI
FCD7N60TM-WS SMD N channel transistors
FCD7N60TM-WS SMD N channel transistors
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В кошику
од. на суму грн.
FCD850N80Z |
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Виробник: ONSEMI
FCD850N80Z SMD N channel transistors
FCD850N80Z SMD N channel transistors
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В кошику
од. на суму грн.
FCD900N60Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Pulsed drain current: 13.5A
Mounting: SMD
Case: DPAK
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Pulsed drain current: 13.5A
Mounting: SMD
Case: DPAK
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Kind of channel: enhancement
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCH023N65S3L4 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65.8A; Idm: 300A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 65.8A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 19.5mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCH029N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Pulsed drain current: 200A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Gate charge: 201nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Pulsed drain current: 200A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Gate charge: 201nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCH040N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCH041N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 285nC
Pulsed drain current: 231A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48.7A; Idm: 231A; 592W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48.7A
Power dissipation: 592W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 285nC
Pulsed drain current: 231A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
FCH041N60F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 277nC
Pulsed drain current: 228A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 76A; Idm: 228A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 76A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 277nC
Pulsed drain current: 228A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.