| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FCH190N65F-F155 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Pulsed drain current: 61.8A Power dissipation: 208W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
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| FCP190N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
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| FCP190N65S3R0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 144W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
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| NTPF190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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| NTHL190N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.7A Pulsed drain current: 50A Power dissipation: 162W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
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| NTMT190N65S3H | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 45A Power dissipation: 129W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMT190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 50A Power dissipation: 162W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTPF190N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 45A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhancement |
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| US2JA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Kind of package: reel; tape |
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NRVUS2JA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
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MUR120RLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Max. forward voltage: 0.875V Reverse recovery time: 35ns |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
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| MUR120G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 35A Case: DO41 Reverse recovery time: 35ns |
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MBRS130T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Kind of package: reel; tape Case: SMB Load current: 1A Max. off-state voltage: 30V Max. forward voltage: 0.6V Mounting: SMD Semiconductor structure: single diode Type of diode: Schottky rectifying |
на замовлення 2083 шт: термін постачання 21-30 дні (днів) |
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FDH44N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Power dissipation: 750W Case: TO247 On-state resistance: 0.12Ω Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Technology: UniFET™ |
на замовлення 222 шт: термін постачання 21-30 дні (днів) |
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BCP55 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 40...250 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
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BC847BS | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.21W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||||
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SBAS40-06LT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 0.12A Semiconductor structure: common anode; double Capacitance: 5pF Max. forward voltage: 1V Leakage current: 1µA Max. forward impulse current: 0.6A Kind of package: reel; tape Power dissipation: 0.225W |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| MOC3012VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 250V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 5mA Mounting: THT Number of channels: 1 Manufacturer series: MOC301XM Conform to the norm: VDE Kind of package: tube |
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TIP120 | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: bulk |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCP45521IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8 Control voltage: 0.5...13.5V DC Case: DFN8 Mounting: SMD Active logical level: low Kind of integrated circuit: high-side Type of integrated circuit: power switch Kind of output: N-Channel Kind of package: reel; tape On-state resistance: 22.5mΩ Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 10.5A |
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TIP121 | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Case: TO220 Mounting: THT Power: 2W |
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В кошику од. на суму грн. | ||||||||||||||||||
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MMBT3904 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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NCP81151MNTBG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8 Case: DFN8 Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: H-bridge Mounting: SMD Operating temperature: -40...100°C Supply voltage: 4.5...5.5V DC |
на замовлення 2126 шт: термін постачання 21-30 дні (днів) |
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| NTH4LN040N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4 Type of transistor: N-MOSFET Power dissipation: 379W Case: TO247-4 Mounting: THT Gate charge: 132nC Kind of package: tube Drain current: 62A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 174A Drain-source voltage: 650V On-state resistance: 40mΩ |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 159nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 32mΩ Drain current: 45A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Gate charge: 153nC Kind of package: tube Drain current: 65A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 162.5A Drain-source voltage: 650V On-state resistance: 40mΩ |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVHL040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247-3 Mounting: THT Gate charge: 157nC Kind of package: tube Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar On-state resistance: 40mΩ Drain current: 65A Gate-source voltage: ±30V Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTHLD040N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 159nC Kind of package: tube Drain current: 45A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 162.5A Drain-source voltage: 650V On-state resistance: 32mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVH4L040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 160nC Kind of package: tube Drain current: 45A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 162.5A Drain-source voltage: 650V On-state resistance: 33.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Drain current: 45A Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±30V Technology: SuperFET® Pulsed drain current: 162.5A Drain-source voltage: 650V On-state resistance: 40mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX84C4V7LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C |
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В кошику од. на суму грн. | |||||||||||||||||||
| NST3904DXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.357W Case: SOT563 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| NST3904F3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.36W Case: SOT1123 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NUP2105LT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: CAN Version: ESD |
на замовлення 6048 шт: термін постачання 21-30 дні (днів) |
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MC14011UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Family: HEF4000B Delay time: 100ns |
на замовлення 539 шт: термін постачання 21-30 дні (днів) |
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MC14011BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
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MC14011UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HEF4000B Delay time: 100ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FOD3150 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Kind of output: transistor Type of optocoupler: optocoupler Mounting: THT Output voltage: 0...35V Turn-off time: 60ns Turn-on time: 60ns Number of channels: 1 Max. off-state voltage: 5V Insulation voltage: 5kV Case: DIP8 Slew rate: 50kV/μs |
на замовлення 383 шт: термін постачання 21-30 дні (днів) |
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LM285D-2.5R2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA Type of integrated circuit: voltage reference source Reference voltage: 2.5V Tolerance: ±1.5% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: reel; tape Maximum output current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4148WS | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: SOD323F Max. forward voltage: 1V Reverse recovery time: 4ns Power dissipation: 0.2W Capacitance: 4pF |
на замовлення 5405 шт: термін постачання 21-30 дні (днів) |
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FDS4480 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Case: SO8 Mounting: SMD Kind of package: reel; tape Power dissipation: 2.5W On-state resistance: 21mΩ Drain current: 10.8A Drain-source voltage: 40V Pulsed drain current: 45A Gate charge: 41nC Technology: PowerTrench® Kind of channel: enhancement |
на замовлення 2318 шт: термін постачання 21-30 дні (днів) |
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1N5339BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
на замовлення 1865 шт: термін постачання 21-30 дні (днів) |
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| FDB0170N607L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Pulsed drain current: 1620A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 173nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
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NTF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 15nC Pulsed drain current: 9A |
на замовлення 1246 шт: термін постачання 21-30 дні (днів) |
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LM393N | ONSEMI |
Category: THT comparators Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 3...32V Mounting: THT Case: DIP8 Operating temperature: 0...70°C Input offset voltage: 9mV Kind of package: tube Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC79M15CDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 |
на замовлення 2029 шт: термін постачання 21-30 дні (днів) |
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MC79M15CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.3V Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC79M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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MC79M15BDTRKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC79M00 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 |
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В кошику од. на суму грн. | ||||||||||||||||||
| MC79M15BTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.5A Case: TO220AB Mounting: THT Kind of package: tube Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FCP16N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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В кошику од. на суму грн. | ||||||||||||||||||
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FCPF16N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A Type of transistor: N-MOSFET Technology: SJ-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Power dissipation: 37.9W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 48A |
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В кошику од. на суму грн. | ||||||||||||||||||
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NTR4501NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.4A Pulsed drain current: 10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6921 шт: термін постачання 21-30 дні (днів) |
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FDC3601N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 100V Drain current: 1A On-state resistance: 976mΩ Gate-source voltage: ±20V |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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BD439G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 4A Case: TO225 Mounting: THT Frequency: 3MHz Current gain: 40...475 Power dissipation: 36W Kind of package: bulk |
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В кошику од. на суму грн. | ||||||||||||||||||
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SZNUP2105LT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23 Type of diode: TVS array Breakdown voltage: 26.2...32V Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional; double Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Number of channels: 2 Kind of package: reel; tape Application: automotive industry Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||||||
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RS1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| RS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NRVHPRS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MBR0540 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FGH50T65UPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 170W Pulsed collector current: 150A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 230nC |
товару немає в наявності |
В кошику од. на суму грн. |
| FCH190N65F-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Pulsed drain current: 61.8A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| FCP190N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| FCP190N65S3R0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 144W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 144W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| NTPF190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| NTHL190N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.7A; Idm: 50A; 162W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.7A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
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| NTMT190N65S3H |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 129W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 129W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| NTMT190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 162W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTPF190N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 45A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhancement
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| US2JA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| NRVUS2JA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| MUR120RLG | |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; Ufmax: 0.875V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
на замовлення 231 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.02 грн |
| 36+ | 11.65 грн |
| 100+ | 8.73 грн |
| MUR120G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; Ifsm: 35A; DO41; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 35ns
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| MBRS130T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Case: SMB
Load current: 1A
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Kind of package: reel; tape
Case: SMB
Load current: 1A
Max. off-state voltage: 30V
Max. forward voltage: 0.6V
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Schottky rectifying
на замовлення 2083 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.77 грн |
| 21+ | 20.13 грн |
| 24+ | 17.97 грн |
| 50+ | 13.89 грн |
| 100+ | 12.48 грн |
| 500+ | 9.65 грн |
| 1000+ | 9.23 грн |
| FDH44N50 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 44A; 750W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Power dissipation: 750W
Case: TO247
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: UniFET™
на замовлення 222 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 575.12 грн |
| 5+ | 479.14 грн |
| 10+ | 449.20 грн |
| 30+ | 416.75 грн |
| BCP55 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
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| BC847BS |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.21W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.21W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
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| SBAS40-06LT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.12A; reel,tape; 225mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.12A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 1µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.75 грн |
| 65+ | 6.41 грн |
| 108+ | 3.85 грн |
| 500+ | 2.88 грн |
| MOC3012VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; DIP6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC301XM
Conform to the norm: VDE
Kind of package: tube
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| TIP120 |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: bulk
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| NCP45521IMNTWG-L |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Control voltage: 0.5...13.5V DC
Case: DFN8
Mounting: SMD
Active logical level: low
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
On-state resistance: 22.5mΩ
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10.5A; Ch: 1; N-Channel; SMD; DFN8
Control voltage: 0.5...13.5V DC
Case: DFN8
Mounting: SMD
Active logical level: low
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of package: reel; tape
On-state resistance: 22.5mΩ
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 10.5A
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| TIP121 |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Case: TO220
Mounting: THT
Power: 2W
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Case: TO220
Mounting: THT
Power: 2W
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| MMBT3904 |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NCP81151MNTBG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Mounting: SMD
Operating temperature: -40...100°C
Supply voltage: 4.5...5.5V DC
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; DFN8
Case: DFN8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: H-bridge
Mounting: SMD
Operating temperature: -40...100°C
Supply voltage: 4.5...5.5V DC
на замовлення 2126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.25 грн |
| 18+ | 24.46 грн |
| 20+ | 21.54 грн |
| 25+ | 18.38 грн |
| 100+ | 15.22 грн |
| 250+ | 15.06 грн |
| NTH4LN040N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 379W
Case: TO247-4
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Drain current: 62A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 174A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; Idm: 174A; 379W; TO247-4
Type of transistor: N-MOSFET
Power dissipation: 379W
Case: TO247-4
Mounting: THT
Gate charge: 132nC
Kind of package: tube
Drain current: 62A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 174A
Drain-source voltage: 650V
On-state resistance: 40mΩ
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| NTHL040N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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| NVHL040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain current: 65A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Drain current: 65A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
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| NVHL040N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 65A; Idm: 162.5A; 446W
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247-3
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 40mΩ
Drain current: 65A
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
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| NTHLD040N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 32mΩ
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| NVH4L040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 33.8mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 33.8mΩ
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| NTHL040N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Drain current: 45A
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Technology: SuperFET®
Pulsed drain current: 162.5A
Drain-source voltage: 650V
On-state resistance: 40mΩ
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| BZX84C4V7LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
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| NST3904DXV6T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 40V; 0.2A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.357W
Case: SOT563
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NST3904F3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.36W; SOT1123
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.36W
Case: SOT1123
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| NUP2105LT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: CAN
Version: ESD
на замовлення 6048 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.08 грн |
| 45+ | 9.32 грн |
| 54+ | 7.80 грн |
| 100+ | 7.21 грн |
| 500+ | 6.00 грн |
| 1000+ | 5.52 грн |
| 1500+ | 5.27 грн |
| 2000+ | 5.08 грн |
| 3000+ | 4.83 грн |
| MC14011UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Family: HEF4000B
Delay time: 100ns
на замовлення 539 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.88 грн |
| 24+ | 17.55 грн |
| 27+ | 15.97 грн |
| 55+ | 14.81 грн |
| 110+ | 13.98 грн |
| 275+ | 13.14 грн |
| MC14011BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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| MC14011UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HEF4000B
Delay time: 100ns
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| FOD3150 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Kind of output: transistor
Type of optocoupler: optocoupler
Mounting: THT
Output voltage: 0...35V
Turn-off time: 60ns
Turn-on time: 60ns
Number of channels: 1
Max. off-state voltage: 5V
Insulation voltage: 5kV
Case: DIP8
Slew rate: 50kV/μs
на замовлення 383 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.20 грн |
| 25+ | 69.88 грн |
| 100+ | 61.56 грн |
| LM285D-2.5R2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1.5%; SO8; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1.5%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: reel; tape
Maximum output current: 20mA
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| 1N4148WS |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; SOD323F; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: SOD323F
Max. forward voltage: 1V
Reverse recovery time: 4ns
Power dissipation: 0.2W
Capacitance: 4pF
на замовлення 5405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.27 грн |
| 84+ | 4.99 грн |
| 93+ | 4.49 грн |
| 123+ | 3.39 грн |
| 139+ | 3.00 грн |
| 500+ | 2.28 грн |
| 1000+ | 2.02 грн |
| 3000+ | 1.98 грн |
| FDS4480 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.8A; Idm: 45A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.5W
On-state resistance: 21mΩ
Drain current: 10.8A
Drain-source voltage: 40V
Pulsed drain current: 45A
Gate charge: 41nC
Technology: PowerTrench®
Kind of channel: enhancement
на замовлення 2318 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 71.67 грн |
| 8+ | 58.56 грн |
| 25+ | 51.66 грн |
| 100+ | 46.42 грн |
| 500+ | 44.00 грн |
| 1N5339BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.6V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
на замовлення 1865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.46 грн |
| 30+ | 13.89 грн |
| 100+ | 12.89 грн |
| 500+ | 11.90 грн |
| 1000+ | 10.90 грн |
| FDB0170N607L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Pulsed drain current: 1620A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 173nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; Idm: 9A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9A
на замовлення 1246 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.21 грн |
| 50+ | 31.36 грн |
| 100+ | 28.45 грн |
| 200+ | 26.04 грн |
| LM393N |
|
Виробник: ONSEMI
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
Category: THT comparators
Description: IC: comparator; universal; Cmp: 2; 3÷32V; THT; DIP8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 3...32V
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Kind of package: tube
Input offset current: 150nA
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| MC79M15CDTRKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
на замовлення 2029 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.04 грн |
| 20+ | 21.71 грн |
| 25+ | 19.71 грн |
| 100+ | 17.14 грн |
| 250+ | 16.64 грн |
| MC79M15CTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
на замовлення 119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.73 грн |
| 18+ | 24.37 грн |
| 25+ | 22.13 грн |
| 50+ | 21.05 грн |
| MC79M15BDTRKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
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| MC79M15BTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Kind of package: tube
Number of channels: 1
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| FCP16N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| FCPF16N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SJ-MOSFET; unipolar; 600V; 10.1A; Idm: 48A
Type of transistor: N-MOSFET
Technology: SJ-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 37.9W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
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| NTR4501NT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.4A; Idm: 10A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.4A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6921 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.33 грн |
| 45+ | 9.32 грн |
| 60+ | 6.95 грн |
| 100+ | 6.15 грн |
| 500+ | 4.68 грн |
| 1000+ | 4.24 грн |
| 1500+ | 3.95 грн |
| 3000+ | 3.89 грн |
| FDC3601N |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 976mΩ
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 1A
On-state resistance: 976mΩ
Gate-source voltage: ±20V
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.06 грн |
| 12+ | 35.52 грн |
| 100+ | 23.54 грн |
| 250+ | 20.05 грн |
| 500+ | 18.38 грн |
| BD439G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 4A; 36W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 4A
Case: TO225
Mounting: THT
Frequency: 3MHz
Current gain: 40...475
Power dissipation: 36W
Kind of package: bulk
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| SZNUP2105LT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 26.2÷32V; 350W; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...32V
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Version: ESD
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| RS1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1GFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| NRVHPRS1GFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| MBR0540 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 40V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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| FGH50T65UPD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 170W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 170W
Pulsed collector current: 150A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 230nC
товару немає в наявності
В кошику
од. на суму грн.