| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FQU2N90TU-WS | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NGTB35N65FL2WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 35A; 150W; TO247-3 Type of transistor: IGBT Power dissipation: 150W Case: TO247-3 Mounting: THT Gate charge: 125nC Kind of package: tube Collector current: 35A Gate-emitter voltage: ±20V Pulsed collector current: 120A Collector-emitter voltage: 650V |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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| LM7301SN1T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV Kind of package: reel; tape Number of channels: single; 1 Mounting: SMT Case: SOT23-5 Operating temperature: -40...85°C Input offset current: 55nA Input offset voltage: 6mV Voltage supply range: 1.8...32V DC Bandwidth: 4MHz Integrated circuit features: low power; rail-to-rail Type of integrated circuit: operational amplifier |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC4094ADR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift and store Number of channels: 1 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MC74HC4094ADTR2G | ONSEMI |
Category: Shift registersDescription: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; register; shift and store Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Number of inputs: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 74LCX16501MTDX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX Type of integrated circuit: digital Kind of integrated circuit: 18bit; bus transceiver Number of channels: 18 Technology: CMOS Mounting: SMD Case: TSSOP56 Operating temperature: -40...85°C Kind of package: reel; tape Supply voltage: 1.5...3.6V DC Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs Manufacturer series: LCX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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74VHC125MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Technology: CMOS Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...5.5V DC Number of channels: 4 Kind of output: 3-state Manufacturer series: VHC Case: TSSOP14 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2016-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89 Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Power dissipation: 1.3W Collector current: 7A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 290MHz Polarisation: bipolar |
на замовлення 729 шт: термін постачання 14-30 дні (днів) |
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2SA2012-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89 Case: SOT89 Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Power dissipation: 3.5W Collector current: 5A Collector-emitter voltage: 30V Current gain: 200...560 Frequency: 350MHz Polarisation: bipolar |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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2SA2040-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK Case: DPAK Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Power dissipation: 1W Collector current: 8A Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 330MHz Polarisation: bipolar |
на замовлення 528 шт: термін постачання 14-30 дні (днів) |
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2SA2153-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 420MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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2SA2013-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89 Mounting: SMD Collector current: 4A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 360MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| 2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2039-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK Mounting: SMD Collector current: 5A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2125-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2125-TD-H | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89 Mounting: SMD Collector current: 3A Power dissipation: 1.3W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2SA2126-TL-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK Mounting: SMD Collector current: 3A Power dissipation: 0.8W Collector-emitter voltage: 50V Current gain: 200...560 Frequency: 390MHz Polarisation: bipolar Case: DPAK Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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2SA2202-TD-E | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89 Mounting: SMD Collector current: 2A Power dissipation: 1.3W Collector-emitter voltage: 100V Current gain: 200...400 Frequency: 300MHz Polarisation: bipolar Case: SOT89 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NSV2SA2029M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723 Mounting: SMD Collector current: 0.1A Power dissipation: 0.265W Collector-emitter voltage: 50V Current gain: 120...560 Application: automotive industry Polarisation: bipolar Case: SOT723 Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| N24C08UVTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSA4159P6X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1 Case: SC70-6; SC88; SOT363 Mounting: SMD Operating temperature: -40...85°C Resistance: 3.5Ω Number of channels: 1 Number of inputs: 1 Supply voltage: 1.65...5.5V DC Number of outputs: 2 Output configuration: SPDT Type of integrated circuit: analog switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -20V Drain current: -400mA Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V |
на замовлення 576 шт: термін постачання 14-30 дні (днів) |
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MJD31CG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz |
на замовлення 977 шт: термін постачання 14-30 дні (днів) |
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| MJD31CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
на замовлення 1183 шт: термін постачання 14-30 дні (днів) |
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| MJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NJVMJD31CT4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NJVMJD31CG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: tube Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NJVMJD31CRLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TL431IDR2G | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TL431ILPRAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±2.2% Mounting: THT Case: TO92 Operating temperature: -40...85°C Operating voltage: 2.495...36V Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTMFS2D5N08XT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 181A Pulsed drain current: 761A Power dissipation: 148W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR120VLSFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 45A Kind of package: reel; tape |
на замовлення 5706 шт: термін постачання 14-30 дні (днів) |
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MBR2H100SFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 3956 шт: термін постачання 14-30 дні (днів) |
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MBR130LSFT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 40A Kind of package: reel; tape Max. load current: 2A |
на замовлення 3613 шт: термін постачання 14-30 дні (днів) |
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BZX79C3V6 | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZX79C3V6-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC14541BDTR2G | ONSEMI |
Category: RTC circuitsDescription: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us Type of integrated circuit: digital Case: TSSOP14 Integrated circuit features: programmable Mounting: SMD Operating temperature: -55...125°C Delay time: 10.5µs Supply voltage: 3...18V Kind of integrated circuit: programmable timer |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FSA3157L6X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; bus switch,demultiplexer; SPDT; Ch: 1 Type of integrated circuit: analog switch Kind of integrated circuit: bus switch; demultiplexer Output configuration: SPDT Number of channels: 1 Case: MicroPak6 Mounting: SMD Resistance: 7Ω Operating temperature: -40...85°C |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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MC14504BDR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Technology: CMOS Type of integrated circuit: digital Case: SO16 Mounting: SMD Kind of integrated circuit: level shifter Number of channels: 6 |
на замовлення 1541 шт: термін постачання 14-30 дні (днів) |
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MC14504BDG | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6 Technology: CMOS Type of integrated circuit: digital Case: SO16 Mounting: SMD Kind of integrated circuit: level shifter Number of outputs: 6 Number of channels: 6 |
на замовлення 121 шт: термін постачання 14-30 дні (днів) |
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MC14504BDTR2G | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16 Mounting: SMD Technology: CMOS Type of integrated circuit: digital Kind of integrated circuit: level shifter Kind of package: reel; tape Case: TSSOP16 Operating temperature: -55...125°C Supply voltage: 3...18V DC Number of channels: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14504BDTG | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Mounting: SMD Technology: CMOS Type of integrated circuit: digital Kind of integrated circuit: level shifter Case: TSSOP16 Number of channels: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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J111-D74Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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J111-D26Z | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA Mounting: THT Type of transistor: N-JFET Case: TO92 Polarisation: unipolar Gate-source voltage: -35V Drain current: 20mA Gate current: 50mA Power dissipation: 0.625W On-state resistance: 30Ω Kind of package: tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMMSZ3V3T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ3V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZMMSZ3V6T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MRS1504T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Case: SMB Type of diode: rectifying Kind of package: reel; tape Semiconductor structure: single diode Max. forward voltage: 1.02V Load current: 1.5A Max. load current: 3A Max. forward impulse current: 50A Max. off-state voltage: 0.4kV |
на замовлення 1735 шт: термін постачання 14-30 дні (днів) |
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| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Reverse recovery time: 50ns Kind of package: reel; tape Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Type of diode: rectifying Max. forward impulse current: 80A Max. off-state voltage: 200V Semiconductor structure: double independent Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Reverse recovery time: 50ns Kind of package: reel; tape Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Type of diode: rectifying Max. forward impulse current: 80A Max. off-state voltage: 200V Semiconductor structure: double independent Case: DFN8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FAN7602CMX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Mounting: SMD Case: SO8 Operating temperature: -25...125°C Kind of package: reel; tape Supply voltage: 8...25V Topology: flyback |
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В кошику од. на суму грн. | |||||||||||||||||||
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FAN3100TSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -2.5...1.8A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of output: non-inverting Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
на замовлення 1776 шт: термін постачання 14-30 дні (днів) |
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FAN3100CSX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5 Case: SOT23-5 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -1.8...2.5A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD Protection: undervoltage UVP |
на замовлення 2108 шт: термін постачання 14-30 дні (днів) |
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FAN3100TMPX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1 Case: MLP6 Technology: MillerDrive™ Kind of package: reel; tape Operating temperature: -40...125°C Output current: -2.5...1.8A Impulse rise time: 20ns Number of channels: 1 Supply voltage: 4.5...18V DC Type of integrated circuit: driver Pulse fall time: 14ns Kind of output: non-inverting Kind of integrated circuit: low-side; MOSFET gate driver Mounting: SMD |
на замовлення 2906 шт: термін постачання 14-30 дні (днів) |
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NCP43080ADR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. | ||||||||||||||||||
| NCP43080AMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
NCP43080DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NCP43080DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: DFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP43080DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
NCP4308DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; SO8; flyback; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
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В кошику од. на суму грн. |
| FQU2N90TU-WS |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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| NGTB35N65FL2WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 150W; TO247-3
Type of transistor: IGBT
Power dissipation: 150W
Case: TO247-3
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Collector-emitter voltage: 650V
на замовлення 24 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 442.87 грн |
| 10+ | 271.08 грн |
| LM7301SN1T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Kind of package: reel; tape
Number of channels: single; 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 1; 1.8÷32VDC; SOT23-5; 6mV
Kind of package: reel; tape
Number of channels: single; 1
Mounting: SMT
Case: SOT23-5
Operating temperature: -40...85°C
Input offset current: 55nA
Input offset voltage: 6mV
Voltage supply range: 1.8...32V DC
Bandwidth: 4MHz
Integrated circuit features: low power; rail-to-rail
Type of integrated circuit: operational amplifier
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| MC74HC4094ADR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 4
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 4
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| MC74HC4094ADTR2G |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 4
Category: Shift registers
Description: IC: digital; 8bit,shift and store,register; Ch: 1; CMOS; SMD; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; register; shift and store
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Number of inputs: 4
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| 74LCX16501MTDX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.5...3.6V DC
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 1.5...3.6V DC
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
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| 74VHC125MTCX | ![]() |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; TSSOP14; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Technology: CMOS
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Number of channels: 4
Kind of output: 3-state
Manufacturer series: VHC
Case: TSSOP14
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В кошику
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| 2SA2016-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.3W
Collector current: 7A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 290MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 7A; 1.3W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1.3W
Collector current: 7A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 290MHz
Polarisation: bipolar
на замовлення 729 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.92 грн |
| 10+ | 44.73 грн |
| 50+ | 33.32 грн |
| 100+ | 31.47 грн |
| 2SA2012-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.5W
Collector current: 5A
Collector-emitter voltage: 30V
Current gain: 200...560
Frequency: 350MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5A; 3.5W; SOT89
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.5W
Collector current: 5A
Collector-emitter voltage: 30V
Current gain: 200...560
Frequency: 350MHz
Polarisation: bipolar
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.81 грн |
| 2SA2040-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1W
Collector current: 8A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 8A; 1W; DPAK
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 1W
Collector current: 8A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 330MHz
Polarisation: bipolar
на замовлення 528 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 105.75 грн |
| 10+ | 62.19 грн |
| 100+ | 41.04 грн |
| 500+ | 34.07 грн |
| 2SA2153-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 420MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2013-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 4A; 1.3W; SOT89
Mounting: SMD
Collector current: 4A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2039-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 5A; 0.8W; DPAK
Mounting: SMD
Collector current: 5A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2125-TD-H |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 1.3W; SOT89
Mounting: SMD
Collector current: 3A
Power dissipation: 1.3W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2126-TL-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 3A; 0.8W; DPAK
Mounting: SMD
Collector current: 3A
Power dissipation: 0.8W
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 390MHz
Polarisation: bipolar
Case: DPAK
Type of transistor: PNP
Kind of package: reel; tape
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| 2SA2202-TD-E |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 2A; 1.3W; SOT89
Mounting: SMD
Collector current: 2A
Power dissipation: 1.3W
Collector-emitter voltage: 100V
Current gain: 200...400
Frequency: 300MHz
Polarisation: bipolar
Case: SOT89
Type of transistor: PNP
Kind of package: reel; tape
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| NSV2SA2029M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.1A; 0.265W; SOT723
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.265W
Collector-emitter voltage: 50V
Current gain: 120...560
Application: automotive industry
Polarisation: bipolar
Case: SOT723
Type of transistor: PNP
Kind of package: reel; tape
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| N24C08UVTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; US8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
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| FSA4159P6X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Case: SC70-6; SC88; SOT363
Mounting: SMD
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Output configuration: SPDT
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 1; Outputs: 2; SC70-6,SC88,SOT363; IN: 1
Case: SC70-6; SC88; SOT363
Mounting: SMD
Operating temperature: -40...85°C
Resistance: 3.5Ω
Number of channels: 1
Number of inputs: 1
Supply voltage: 1.65...5.5V DC
Number of outputs: 2
Output configuration: SPDT
Type of integrated circuit: analog switch
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| NTR0202PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -400mA
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
на замовлення 576 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.94 грн |
| 63+ | 6.71 грн |
| 83+ | 5.10 грн |
| 100+ | 4.64 грн |
| 250+ | 4.25 грн |
| 500+ | 3.99 грн |
| MJD31CG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
на замовлення 977 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.31 грн |
| 10+ | 57.57 грн |
| 75+ | 31.98 грн |
| 525+ | 31.64 грн |
| MJD31CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
на замовлення 1183 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.33 грн |
| 13+ | 34.33 грн |
| 50+ | 25.09 грн |
| 100+ | 21.90 грн |
| 500+ | 16.28 грн |
| MJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
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| NJVMJD31CT4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| NJVMJD31CG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: tube
Frequency: 3MHz
Application: automotive industry
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| NJVMJD31CRLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
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| TL431IDR2G |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431ILPRAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±2.2%; TO92; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±2.2%
Mounting: THT
Case: TO92
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Maximum output current: 0.1A
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| NTMFS2D5N08XT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 181A
Pulsed drain current: 761A
Power dissipation: 148W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 181A
Pulsed drain current: 761A
Power dissipation: 148W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MBR120VLSFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 45A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 45A
Kind of package: reel; tape
на замовлення 5706 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.15 грн |
| 28+ | 15.44 грн |
| 35+ | 12.09 грн |
| 50+ | 10.41 грн |
| 100+ | 9.48 грн |
| 250+ | 8.81 грн |
| 500+ | 8.31 грн |
| 1000+ | 7.81 грн |
| 1500+ | 7.47 грн |
| MBR2H100SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 3956 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 19+ | 22.32 грн |
| 26+ | 16.45 грн |
| 500+ | 10.91 грн |
| MBR130LSFT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
на замовлення 3613 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 21+ | 20.48 грн |
| 23+ | 18.55 грн |
| 50+ | 14.35 грн |
| 100+ | 12.67 грн |
| 250+ | 10.83 грн |
| 500+ | 9.57 грн |
| 1000+ | 8.48 грн |
| BZX79C3V6 |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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| BZX79C3V6-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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| MC14541BDTR2G |
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Виробник: ONSEMI
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Type of integrated circuit: digital
Case: TSSOP14
Integrated circuit features: programmable
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
Kind of integrated circuit: programmable timer
Category: RTC circuits
Description: IC: digital; programmable timer; TSSOP14; -55÷125°C; 3÷18V; 10.5us
Type of integrated circuit: digital
Case: TSSOP14
Integrated circuit features: programmable
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 10.5µs
Supply voltage: 3...18V
Kind of integrated circuit: programmable timer
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| FSA3157L6X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; bus switch,demultiplexer; SPDT; Ch: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer
Output configuration: SPDT
Number of channels: 1
Case: MicroPak6
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
Category: Analog multiplexers and switches
Description: IC: analog switch; bus switch,demultiplexer; SPDT; Ch: 1
Type of integrated circuit: analog switch
Kind of integrated circuit: bus switch; demultiplexer
Output configuration: SPDT
Number of channels: 1
Case: MicroPak6
Mounting: SMD
Resistance: 7Ω
Operating temperature: -40...85°C
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 11.57 грн |
| MC14504BDR2G | ![]() |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Kind of integrated circuit: level shifter
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Kind of integrated circuit: level shifter
Number of channels: 6
на замовлення 1541 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.36 грн |
| MC14504BDG | ![]() |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Kind of integrated circuit: level shifter
Number of outputs: 6
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16; OUT: 6
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Kind of integrated circuit: level shifter
Number of outputs: 6
Number of channels: 6
на замовлення 121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.38 грн |
| 12+ | 37.77 грн |
| MC14504BDTR2G |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Kind of package: reel; tape
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; 3÷18VDC; SMD; TSSOP16
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Kind of package: reel; tape
Case: TSSOP16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Number of channels: 6
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| MC14504BDTG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Number of channels: 6
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Mounting: SMD
Technology: CMOS
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Case: TSSOP16
Number of channels: 6
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| J111-D74Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
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| J111-D26Z |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
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| SZMMSZ3V3T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| MMSZ3V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
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| SZMMSZ3V6T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| MRS1504T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.02V
Load current: 1.5A
Max. load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward voltage: 1.02V
Load current: 1.5A
Max. load current: 3A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.04 грн |
| NRVHP820MFDT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
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| NRVHP820MFDT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Reverse recovery time: 50ns
Kind of package: reel; tape
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Type of diode: rectifying
Max. forward impulse current: 80A
Max. off-state voltage: 200V
Semiconductor structure: double independent
Case: DFN8
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| FAN7602CMX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
Category: Buffers, transceivers, drivers
Description: IC: PMIC; PFC controller; SMD; SO8; -25÷125°C; reel,tape; 8÷25V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Mounting: SMD
Case: SO8
Operating temperature: -25...125°C
Kind of package: reel; tape
Supply voltage: 8...25V
Topology: flyback
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| FAN3100TSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
на замовлення 1776 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.50 грн |
| 10+ | 45.66 грн |
| 25+ | 41.21 грн |
| 100+ | 40.96 грн |
| FAN3100CSX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.8...2.5A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SOT23-5
Case: SOT23-5
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.8...2.5A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Protection: undervoltage UVP
на замовлення 2108 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.56 грн |
| 11+ | 40.79 грн |
| FAN3100TMPX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; MLP6; Ch: 1
Case: MLP6
Technology: MillerDrive™
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -2.5...1.8A
Impulse rise time: 20ns
Number of channels: 1
Supply voltage: 4.5...18V DC
Type of integrated circuit: driver
Pulse fall time: 14ns
Kind of output: non-inverting
Kind of integrated circuit: low-side; MOSFET gate driver
Mounting: SMD
на замовлення 2906 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.69 грн |
| 10+ | 46.41 грн |
| 25+ | 42.63 грн |
| NCP43080ADR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080AMTTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DMNTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: DFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP43080DMTTWG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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| NCP4308DDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
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од. на суму грн.





















