| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SS24 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1SMA5922BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 2395 шт: термін постачання 21-30 дні (днів) |
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SMBJ30A | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 35V Max. forward impulse current: 100A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
| NTP125N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 171W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| NVB125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| FCMT125N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 60A Power dissipation: 181W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| NVHL025N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 300A Power dissipation: 595W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25mΩ Mounting: THT Gate charge: 236nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| ESD8472MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| SZESD8472MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.3V Breakdown voltage: 7...12V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| FCMT080N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Pulsed drain current: 95A Power dissipation: 260W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 71nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| FCMT180N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 42.5A Power dissipation: 139W Case: PQFN4 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| S310FA | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.85V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SOD123F |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
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NL17SZ74USG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8 Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: US8 Operating temperature: -40...85°C Supply voltage: 2...6V DC Trigger: positive-edge-triggered Manufacturer series: 7SZ |
на замовлення 2166 шт: термін постачання 21-30 дні (днів) |
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| 1N5369BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MMBTA55LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1019 шт: термін постачання 21-30 дні (днів) |
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MMBTA05LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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MUN5135DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.187W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
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В кошику од. на суму грн. | ||||||||||||||
| NSVMUN5135DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Type of transistor: PNP x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
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В кошику од. на суму грн. | |||||||||||||||
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2N6287 | ONSEMI |
Category: PNP THT Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 20A Power dissipation: 160W Case: TO3 Mounting: THT Kind of package: in-tray |
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2N4403BU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.35W Case: TO92 Mounting: THT Kind of package: bulk |
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В кошику од. на суму грн. | ||||||||||||||
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1N4740A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 10µA Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS16T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 3777 шт: термін постачання 21-30 дні (днів) |
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MOC3063M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Output voltage: 600V Manufacturer series: MOC3063M |
на замовлення 279 шт: термін постачання 21-30 дні (днів) |
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FDA59N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 35A Pulsed drain current: 236A Power dissipation: 500W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 72W Case: DPAK Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
| BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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В кошику од. на суму грн. | |||||||||||||||
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FQP8N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 45nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
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В кошику од. на суму грн. | |||||||||||||||
| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830HAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N25S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N25S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N64S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
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В кошику од. на суму грн. | |||||||||||||||
| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 441W Pulsed collector current: 378A Collector-emitter voltage: 650V Gate charge: 162nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
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В кошику од. на суму грн. | |||||||||||||||
| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 357W Pulsed collector current: 360A Collector-emitter voltage: 650V Gate charge: 125nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TIP29AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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TIP29CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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TIP29BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| S310 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.9V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Mounting: SMD Type of transistor: N-JFET Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: -40V Drain current: 8mA Gate current: 50mA Power dissipation: 0.25W On-state resistance: 60Ω |
на замовлення 902 шт: термін постачання 21-30 дні (днів) |
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SBCP56-16T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||
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FQD12P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -6A Pulsed drain current: -37.6A Power dissipation: 50W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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MC7905ACD2TR4G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900 Manufacturer series: MC7900 Kind of package: reel; tape Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: 0...125°C Output voltage: -5V Number of channels: 1 Output current: 1A Voltage drop: 1.3V Tolerance: ±2% Case: D2PAK Kind of voltage regulator: fixed; linear |
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В кошику од. на суму грн. | ||||||||||||||
| FSUSB30L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA Type of integrated circuit: analog switch Kind of integrated circuit: USB switch Number of channels: 2 Case: MicroPak10 Supply voltage: 3...4.3V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: DPDT Quiescent current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MJ11032G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 120V Collector current: 30A Power dissipation: 300W Case: TO3 Mounting: THT Kind of package: in-tray |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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FDP80N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 65A Pulsed drain current: 320A Power dissipation: 176W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 74nC Kind of package: tube Kind of channel: enhancement Technology: DMOS; UniFET™ |
товару немає в наявності |
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 |
MMBTA56WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 545 шт: термін постачання 21-30 дні (днів) |
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SMMBTA56LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
на замовлення 353 шт: термін постачання 21-30 дні (днів) |
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| SMMBTA56LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| SMMBTA56WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| SMMBTA56WT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
 |
MMBTA56 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
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| MBR0530 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
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 |
74ACT139MTC | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Mounting: SMD Case: TSSOP16 Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
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В кошику од. на суму грн. | ||||||||||||||
|
|
74ACT139MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 1 Mounting: SMD Case: TSSOP16 Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA |
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В кошику од. на суму грн. | ||||||||||||||
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74ACT139SCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 1 Mounting: SMD Case: SO16 Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
MC74ACT139DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Mounting: SMD Case: SOIC16 Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Technology: TTL Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MC74ACT139DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Number of inputs: 3 Mounting: SMD Case: TSSOP16 Family: ACT Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Technology: TTL Kind of package: reel; tape Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. |
| SS24 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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В кошику
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| 1SMA5922BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2395 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 24+ | 17.47 грн |
| 50+ | 12.85 грн |
| 100+ | 11.04 грн |
| 500+ | 7.75 грн |
| 1000+ | 6.67 грн |
| SMBJ30A |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 35V; 100A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 35V
Max. forward impulse current: 100A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NTP125N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| NVB125N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| FCMT125N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVHL025N65S3 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 75A; Idm: 300A; 595W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 595W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 236nC
Kind of package: tube
Kind of channel: enhancement
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| ESD8472MUT5G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
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| SZESD8472MUT5G |
|
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7÷12V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.3V
Breakdown voltage: 7...12V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FCMT080N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCMT180N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| S310FA |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.85V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SOD123F
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.73 грн |
| 21+ | 20.27 грн |
| 50+ | 17.72 грн |
| 100+ | 16.56 грн |
| 250+ | 16.40 грн |
| NL17SZ74USG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; US8
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: US8
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2166 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 34+ | 12.19 грн |
| 39+ | 10.79 грн |
| 45+ | 9.23 грн |
| 100+ | 8.49 грн |
| 1N5369BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| MMBTA55LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.65 грн |
| 55+ | 7.58 грн |
| 68+ | 6.13 грн |
| 100+ | 4.28 грн |
| 500+ | 2.88 грн |
| 1000+ | 2.46 грн |
| MMBTA05LT1G | |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.76 грн |
| 65+ | 6.34 грн |
| 96+ | 4.30 грн |
| 114+ | 3.63 грн |
| 500+ | 2.50 грн |
| 1000+ | 2.17 грн |
| 1500+ | 1.98 грн |
| MUN5135DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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| NSVMUN5135DW1T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| 2N6287 |
|
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 20A; 160W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 20A
Power dissipation: 160W
Case: TO3
Mounting: THT
Kind of package: in-tray
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| 2N4403BU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.35W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.35W
Case: TO92
Mounting: THT
Kind of package: bulk
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| 1N4740A-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 10V; Ammo Pack; DO41; single diode; 10uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: 1N47xxA
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| SS16T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 3777 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.99 грн |
| 66+ | 6.26 грн |
| 74+ | 5.64 грн |
| 100+ | 5.44 грн |
| 500+ | 5.13 грн |
| 1000+ | 4.93 грн |
| 2500+ | 4.71 грн |
| MOC3063M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3063M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3063M
на замовлення 279 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.90 грн |
| 12+ | 35.76 грн |
| 25+ | 31.15 грн |
| 50+ | 28.02 грн |
| 100+ | 25.13 грн |
| 200+ | 24.97 грн |
| FDA59N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 336.31 грн |
| 5+ | 271.09 грн |
| 10+ | 234.83 грн |
| 30+ | 180.45 грн |
| RFD16N05SM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BSS138 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| FQP8N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
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| N64S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| N01S830BAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830BAT22IT |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22IT |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N25S830HAS22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N25S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N64S830HAS22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| FGY120T65SPD-F085 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| AFGY120T65SPD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| TIP29AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 110.03 грн |
| 10+ | 65.51 грн |
| 50+ | 49.27 грн |
| TIP29CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.09 грн |
| 10+ | 54.22 грн |
| TIP29BG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.85 грн |
| 10+ | 57.84 грн |
| S310 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
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| BSR58 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -40V
Drain current: 8mA
Gate current: 50mA
Power dissipation: 0.25W
On-state resistance: 60Ω
на замовлення 902 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 21+ | 19.78 грн |
| 50+ | 11.78 грн |
| 100+ | 10.13 грн |
| 500+ | 7.33 грн |
| SBCP56-16T3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Application: automotive industry
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| FQD12P10TM-F085 |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6A
Pulsed drain current: -37.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -6A; Idm: -37.6A; 50W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -6A
Pulsed drain current: -37.6A
Power dissipation: 50W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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| MC7905ACD2TR4G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900
Manufacturer series: MC7900
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output voltage: -5V
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±2%
Case: D2PAK
Kind of voltage regulator: fixed; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 1A; D2PAK; SMD; MC7900
Manufacturer series: MC7900
Kind of package: reel; tape
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output voltage: -5V
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
Tolerance: ±2%
Case: D2PAK
Kind of voltage regulator: fixed; linear
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| FSUSB30L10X |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; MicroPak10; 3÷4.3VDC; 1uA
Type of integrated circuit: analog switch
Kind of integrated circuit: USB switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 3...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: DPDT
Quiescent current: 1µA
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| MJ11032G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 30A; 300W; TO3
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 30A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 885.58 грн |
| FDP80N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
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| MMBTA56WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 545 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.76 грн |
| 50+ | 8.24 грн |
| 100+ | 5.40 грн |
| 500+ | 3.09 грн |
| SMMBTA56LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
на замовлення 353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.73 грн |
| 24+ | 17.88 грн |
| 30+ | 14.01 грн |
| 50+ | 11.26 грн |
| 100+ | 8.99 грн |
| SMMBTA56LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| SMMBTA56WT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| MMBTA56 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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| MBR0530 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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| 74ACT139MTC |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
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| 74ACT139MTCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP16; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
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| 74ACT139SCX |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; SO16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 1
Mounting: SMD
Case: SO16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
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| MC74ACT139DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: SOIC16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...85°C
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| MC74ACT139DTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Mounting: SMD
Case: TSSOP16
Family: ACT
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Operating temperature: -40...85°C
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