| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MOC3083VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
74AC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP14 Family: AC Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Number of inputs: 1 Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: decoder; demultiplexer |
на замовлення 1819 шт: термін постачання 21-30 дні (днів) |
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| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape Mounting: SMT Integrated circuit features: rail-to-rail output Case: SO14 Type of integrated circuit: operational amplifier Kind of package: reel; tape Operating temperature: -40...125°C Input bias current: 1pA Input offset current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Number of channels: quad |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LM2595DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMB2222A | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.7W Case: TSOT23-6 Mounting: SMD Frequency: 300MHz Current gain: 100...300 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Pulsed drain current: 916A Drain current: 162A Gate charge: 178nC On-state resistance: 2.4mΩ Power dissipation: 246W Gate-source voltage: ±20V Case: D2PAK Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GRUMMUN2216LT1G | ONSEMI |
Category: Unclassified Description: GRUMMUN2216LT1G |
на замовлення 18000 шт: термін постачання 21-30 дні (днів) |
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| NSI45020JZT1G | ONSEMI |
Category: LED driversDescription: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: SOT223 Output current: 40mA Number of channels: 1 Mounting: SMD Operating temperature: -55...150°C Power dissipation: 1W Output voltage: 45V Input voltage: 45V Topology: boost; buck |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| LMV331SN3T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Mounting: SMT Case: TSOP5 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Delay time: 1.5µs Input bias current: 1nA Operating voltage: 2.7...5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBRS4201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.61V Kind of package: reel; tape Reverse recovery time: 35ns Max. forward impulse current: 100A |
на замовлення 2585 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G14DFT1G-F22038 | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 162000 шт: термін постачання 21-30 дні (днів) |
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| NVMJD012N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS011N04CTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 173A Power dissipation: 9.1W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74VHCT50ADR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Operating temperature: -55...125°C Supply voltage: 2...5.5V DC Kind of package: reel; tape Number of channels: 6 Manufacturer series: VHCT Kind of integrated circuit: buffer; non-inverting Case: SO14 Technology: CMOS; TTL Type of integrated circuit: digital Mounting: SMD Quiescent current: 40µA |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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1SMB5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 7864 шт: термін постачання 21-30 дні (днів) |
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1SMB5935BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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1SMB5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 5299 шт: термін постачання 21-30 дні (днів) |
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1SMB5925BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 11209 шт: термін постачання 21-30 дні (днів) |
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1SMB5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 995 шт: термін постачання 21-30 дні (днів) |
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| NRVB540MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Load current: 5A Max. forward voltage: 0.58V Max. load current: 10A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. load current: 10A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.78V Max. load current: 10A Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDP030N06B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3042SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC304XM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM317LBZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LBZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LBZRPG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZREG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZRMG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZRPG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LCX07DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Supply voltage: 2...5.5V DC Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: LCX Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Number of channels: 6 Kind of output: open drain Case: SO14 |
на замовлення 2118 шт: термін постачання 21-30 дні (днів) |
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MC74LCX07DG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Supply voltage: 2.3...3.6V DC Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: LCX Kind of package: tube Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Number of channels: 6 Kind of output: open drain Case: SO14 |
на замовлення 2723 шт: термін постачання 21-30 дні (днів) |
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MC74HC365ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Case: TSSOP16 Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Supply voltage: 2...6V DC Kind of output: 3-state Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 6 |
на замовлення 2393 шт: термін постачання 21-30 дні (днів) |
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MJ21193G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Polarisation: bipolar Kind of package: in-tray Mounting: THT Type of transistor: PNP Case: TO3 Current gain: 8...75 Collector current: 16A Power dissipation: 250W Collector-emitter voltage: 250V Frequency: 4MHz |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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| LM431SACM32X | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
на замовлення 24000 шт: термін постачання 21-30 дні (днів) |
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| GRULM431SCCM3X | ONSEMI |
Category: Unclassified Description: GRULM431SCCM3X |
на замовлення 162000 шт: термін постачання 21-30 дні (днів) |
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| FCP099N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 48nC |
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В кошику од. на суму грн. | |||||||||||||||||
| AFGB40T65RQDN | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 169.68W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 51nC |
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В кошику од. на суму грн. | |||||||||||||||||
|
AFGHL40T65SPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Gate charge: 36nC |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| AFGHL40T65SQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 68nC |
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В кошику од. на суму грн. | |||||||||||||||||
|
MOC3163M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6 Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: zero voltage crossing driver Case: DIP6 Trigger current: 5mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3163M Slew rate: 1kV/μs |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
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| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| LM2576D2T-005G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||
| LMV339DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA Kind of package: reel; tape Mounting: SMT Operating temperature: -40...85°C Input bias current: 1nA Delay time: 1.5µs Input offset voltage: 9mV Number of comparators: 4 Operating voltage: 2.7...5V Input offset current: 1nA Type of integrated circuit: comparator Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MBRD835LT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Max. load current: 16A |
на замовлення 561 шт: термін постачання 21-30 дні (днів) |
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74AC541MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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74AC541MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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| MOC3083VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
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| 74AC139MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Family: AC
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of inputs: 1
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
на замовлення 1819 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.49 грн |
| 12+ | 34.85 грн |
| 25+ | 29.57 грн |
| 50+ | 26.26 грн |
| 100+ | 23.54 грн |
| 250+ | 20.48 грн |
| 1000+ | 18.66 грн |
| NCS20034DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Case: SO14
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Case: SO14
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: quad
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од. на суму грн.
| LM2595DSADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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В кошику
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| MJB44H11G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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| MJB44H11T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| NJW44H11G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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| NJVMJB44H11T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| FMB2222A |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Mounting: SMD
Frequency: 300MHz
Current gain: 100...300
Kind of package: reel; tape
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| NVMFS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS016N10MCLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDB024N08BL7 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
товару немає в наявності
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од. на суму грн.
| GRUMMUN2216LT1G |
на замовлення 18000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.69 грн |
| NSI45020JZT1G |
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Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: SOT223
Output current: 40mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Power dissipation: 1W
Output voltage: 45V
Input voltage: 45V
Topology: boost; buck
Category: LED drivers
Description: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: SOT223
Output current: 40mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Power dissipation: 1W
Output voltage: 45V
Input voltage: 45V
Topology: boost; buck
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 22.24 грн |
| LMV331SN3T1G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
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| MBRS4201T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Kind of package: reel; tape
Reverse recovery time: 35ns
Max. forward impulse current: 100A
на замовлення 2585 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.93 грн |
| 10+ | 54.34 грн |
| 25+ | 48.07 грн |
| 50+ | 43.85 грн |
| 100+ | 41.62 грн |
| MC74HC1G14DFT1G-F22038 |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 162000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.40 грн |
| NVMJD012N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
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| NVMYS011N04CTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| DTC114EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
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| MC74VHCT50ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Manufacturer series: VHCT
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Technology: CMOS; TTL
Type of integrated circuit: digital
Mounting: SMD
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Operating temperature: -55...125°C
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Number of channels: 6
Manufacturer series: VHCT
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Technology: CMOS; TTL
Type of integrated circuit: digital
Mounting: SMD
Quiescent current: 40µA
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.91 грн |
| 17+ | 24.36 грн |
| 1SMB5918BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 7864 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.12 грн |
| 25+ | 16.52 грн |
| 31+ | 13.71 грн |
| 40+ | 10.41 грн |
| 100+ | 7.27 грн |
| 500+ | 6.61 грн |
| 1SMB5935BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 710 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.35 грн |
| 30+ | 14.21 грн |
| 33+ | 12.55 грн |
| 50+ | 10.65 грн |
| 100+ | 9.33 грн |
| 200+ | 8.18 грн |
| 250+ | 7.76 грн |
| 500+ | 7.52 грн |
| 1SMB5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 5299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.79 грн |
| 32+ | 13.05 грн |
| 37+ | 11.23 грн |
| 54+ | 7.68 грн |
| 100+ | 6.69 грн |
| 500+ | 6.44 грн |
| 1SMB5925BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 11209 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.24 грн |
| 24+ | 17.34 грн |
| 28+ | 15.20 грн |
| 50+ | 10.49 грн |
| 100+ | 8.84 грн |
| 500+ | 8.26 грн |
| 1SMB5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.79 грн |
| 25+ | 17.01 грн |
| 30+ | 13.79 грн |
| 50+ | 8.42 грн |
| 100+ | 6.85 грн |
| 250+ | 6.52 грн |
| NRVB540MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
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| NRVB560MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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| NRVB560MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. load current: 10A
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
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| FDP030N06B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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| NTMFD030N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWD030N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS030N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS002N04CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MOC3042SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC304XM
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| LM317LBZG | ![]() |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
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| LM317LBZRAG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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| LM317LBZRPG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| LM317LZREG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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| LM317LZRMG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| LM317LZRPG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| MC74LCX07DR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.35 грн |
| 21+ | 20.40 грн |
| 25+ | 18.17 грн |
| 100+ | 15.44 грн |
| 250+ | 14.12 грн |
| 500+ | 13.21 грн |
| 1000+ | 12.55 грн |
| MC74LCX07DG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2.3...3.6V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of package: tube
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2.3...3.6V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of package: tube
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
на замовлення 2723 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.71 грн |
| 12+ | 37.16 грн |
| 25+ | 30.72 грн |
| 55+ | 26.43 грн |
| 110+ | 25.02 грн |
| MC74HC365ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
на замовлення 2393 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.68 грн |
| 21+ | 19.99 грн |
| 24+ | 17.59 грн |
| 28+ | 14.87 грн |
| 100+ | 13.96 грн |
| MJ21193G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Current gain: 8...75
Collector current: 16A
Power dissipation: 250W
Collector-emitter voltage: 250V
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Current gain: 8...75
Collector current: 16A
Power dissipation: 250W
Collector-emitter voltage: 250V
Frequency: 4MHz
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 563.00 грн |
| 2+ | 495.53 грн |
| 5+ | 446.80 грн |
| 10+ | 400.55 грн |
| 25+ | 398.90 грн |
| LM431SACM32X |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.40 грн |
| GRULM431SCCM3X |
на замовлення 162000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.40 грн |
| FCP099N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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| NTHL099N60S5 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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| AFGB40T65RQDN |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
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| AFGHL40T65SPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 36nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 36nC
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 368.34 грн |
| 10+ | 312.18 грн |
| 20+ | 292.36 грн |
| AFGHL40T65SQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
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| MOC3163M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: zero voltage crossing driver
Case: DIP6
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3163M
Slew rate: 1kV/μs
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.14 грн |
| 13+ | 33.86 грн |
| 25+ | 31.38 грн |
| 50+ | 29.73 грн |
| 100+ | 28.08 грн |
| LM2576D2T-ADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| LM2576D2T-005G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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| LMV339DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Delay time: 1.5µs
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: SO14
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Delay time: 1.5µs
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: SO14
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од. на суму грн.
| MBRD835LT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.25 грн |
| 11+ | 38.24 грн |
| 50+ | 30.89 грн |
| 100+ | 29.98 грн |
| 74AC541MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.03 грн |
| 11+ | 39.72 грн |
| 74AC541MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.36 грн |
| 12+ | 35.43 грн |
| 25+ | 32.04 грн |
| 50+ | 29.98 грн |
| 100+ | 28.16 грн |















