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FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP120N10 ONSEMI fdp120n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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MM3Z18VST1G MM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G SZMM3Z18VST1G ONSEMI MM3ZxxST1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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1N5342BG 1N5342BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 570 шт:
термін постачання 21-30 дні (днів)
32+14.36 грн
Мінімальне замовлення: 32
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1N5346BRLG 1N5346BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)
17+27.82 грн
18+23.33 грн
20+21.25 грн
100+14.42 грн
500+13.58 грн
Мінімальне замовлення: 17
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1N5353BG 1N5353BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1466 шт:
термін постачання 21-30 дні (днів)
20+23.33 грн
24+17.67 грн
50+14.42 грн
100+13.25 грн
250+12.00 грн
Мінімальне замовлення: 20
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MJE15030 MJE15030 ONSEMI MJE15030.PDF Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJB44H11T4G ONSEMI mjb44h11-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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NJVMJB44H11T4G ONSEMI mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MJD45H11T4G MJD45H11T4G ONSEMI MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
7+71.79 грн
10+46.16 грн
50+33.83 грн
100+29.41 грн
Мінімальне замовлення: 7
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MJD45H11G MJD45H11G ONSEMI MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
6+88.84 грн
10+68.33 грн
25+51.66 грн
Мінімальне замовлення: 6
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MJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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MJD45H11-1G MJD45H11-1G ONSEMI MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF description Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
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NJVMJD45H11G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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NJVMJD45H11RLG ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD45H11T4G ONSEMI mjd44h11-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NTMFS024N06CT1G ONSEMI NTMFS024N06C-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFD024N06CT1G ONSEMI nvmfd024n06c-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1G ONSEMI nvmfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP1236AD100R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236AD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236DD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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MC74AC573DWG MC74AC573DWG ONSEMI mc74ac573-d.pdf Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of output: 3-state
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
10+49.36 грн
13+33.25 грн
25+29.66 грн
38+27.83 грн
114+22.75 грн
190+20.33 грн
Мінімальне замовлення: 10
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MC74AC573DTR2G ONSEMI MC74AC573-D.pdf Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
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MC74AC573DWR2G ONSEMI MC74AC573-D.pdf Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
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FDC6330L FDC6330L ONSEMI fdc6330l-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 2.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 5570 шт:
термін постачання 21-30 дні (днів)
11+41.28 грн
13+32.91 грн
Мінімальне замовлення: 11
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MMBT5401LT3G ONSEMI mmbt5401lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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MMBT5401 MMBT5401 ONSEMI MMBT5401.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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KSD1408YTU KSD1408YTU ONSEMI ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
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KSD1692YS KSD1692YS ONSEMI KSD1692YS.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: TO126ISO
Current gain: 4000...12000
Mounting: THT
Kind of package: tube
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KSD5041RTA KSD5041RTA ONSEMI KSD5041.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
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UJ3D1220KSD UJ3D1220KSD ONSEMI UJ3D1220KSD.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Power dissipation: 53.2/468.8W
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
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UJ3D1210KSD ONSEMI UJ3D1210KSD-D.PDF Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-3
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1N4006FFG 1N4006FFG ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
на замовлення 3849 шт:
термін постачання 21-30 дні (днів)
321+1.40 грн
417+1.00 грн
432+0.97 грн
455+0.92 грн
500+0.88 грн
Мінімальне замовлення: 321
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1N4006G 1N4006G ONSEMI 1N4001-D.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1665 шт:
термін постачання 21-30 дні (днів)
42+10.77 грн
62+6.75 грн
100+4.48 грн
500+3.42 грн
1000+3.08 грн
Мінімальне замовлення: 42
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FSQ0170RNA FSQ0170RNA ONSEMI fsq0270rna-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700mA; 700V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.7A
Output voltage: 700V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 55...65%
Power: 13W
Application: SMPS
Operating voltage: 8...19V DC
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NDUL03N150CG ONSEMI ena2218-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 50W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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MBRB20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. load current: 20A
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
4+126.53 грн
10+94.16 грн
25+80.83 грн
50+70.00 грн
100+68.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DTC123JET1G DTC123JET1G ONSEMI DTC123JET1G-DTE.PDF Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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DTC123EET1G ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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DTC123EM3T5G ONSEMI dtc123e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
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DTC123JM3T5G ONSEMI dtc123j-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
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DTC123TET1G DTC123TET1G ONSEMI dtc123t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
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MC14021BDR2G MC14021BDR2G ONSEMI mc14014b-d.pdf Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
14+34.10 грн
19+22.33 грн
25+20.08 грн
100+17.50 грн
250+16.17 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MC14014BDG MC14014BDG ONSEMI MC14014B-D.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
16+28.72 грн
22+19.25 грн
25+17.50 грн
48+16.25 грн
96+15.00 грн
144+14.33 грн
288+14.00 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NCP1393BDR2G NCP1393BDR2G ONSEMI ncp1393%20bd.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
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NCP1392BDR2G NCP1392BDR2G ONSEMI ncp1392-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
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NCP1395BDR2G NCP1395BDR2G ONSEMI ncp1395-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 1A
Frequency: 48.5kHz...1.11MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.3...20V DC
Operating temperature: -40...125°C
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NCP1396BDR2G NCP1396BDR2G ONSEMI ncp1396d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Operating temperature: -40...125°C
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FDP027N08B-F102 ONSEMI fdp027n08b-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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FCP22N60N FCP22N60N ONSEMI FCP22N60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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SMF12CT1G SMF12CT1G ONSEMI smf05c-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 6A
Version: ESD
Peak pulse power dissipation: 0.1kW
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NTD18N06LT4G ONSEMI ntd18n06l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6561AN FDC6561AN ONSEMI FDC6561AN.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 847 шт:
термін постачання 21-30 дні (днів)
8+62.82 грн
10+41.83 грн
50+28.83 грн
100+24.67 грн
250+20.42 грн
500+18.17 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
GBPC2510 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2510W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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1N5356BRLG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
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MUN5335DW1T1G MUN5335DW1T1G ONSEMI MUN5335DW1.PDF Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 5745 шт:
термін постачання 21-30 дні (днів)
28+16.15 грн
46+9.08 грн
65+6.48 грн
100+5.64 грн
500+4.15 грн
1000+3.67 грн
1500+3.42 грн
3000+3.06 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
FDB120N10 fdb120n10-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP120N10 fdp120n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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MM3Z18VST1G MM3ZxxST1G.PDF
MM3Z18VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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SZMM3Z18VST1G MM3ZxxST1G.PDF
SZMM3Z18VST1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
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1N5342BG 1N53xx.PDF
1N5342BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.36 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N5346BRLG description 1N53xx.PDF
1N5346BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.82 грн
18+23.33 грн
20+21.25 грн
100+14.42 грн
500+13.58 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
1N5353BG 1N53xx.PDF
1N5353BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1466 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.33 грн
24+17.67 грн
50+14.42 грн
100+13.25 грн
250+12.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MJE15030 MJE15030.PDF
MJE15030
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MJB44H11T4G mjb44h11-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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NJVMJB44H11T4G mjb44h11-d.pdf ONSMS34461-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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MJD45H11T4G description MJD44H11_MJD45H11.PDF MJD44H11_MJD45H11.PDF
MJD45H11T4G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+71.79 грн
10+46.16 грн
50+33.83 грн
100+29.41 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
MJD45H11G description MJD44H11_MJD45H11.PDF
MJD45H11G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+88.84 грн
10+68.33 грн
25+51.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
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MJD45H11-1G description MJD45H11-001G.PDF MJD44H11_MJD45H11.PDF
MJD45H11-1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
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NJVMJD45H11G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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NJVMJD45H11RLG mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NJVMJD45H11T4G mjd44h11-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NTMFS024N06CT1G NTMFS024N06C-D.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFD024N06CT1G nvmfd024n06c-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1G nvmfs024n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP1236AD100R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236AD65R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236DD65R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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MC74AC573DWG mc74ac573-d.pdf
MC74AC573DWG
Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 8; 2÷6VDC; SMD; SO20-W; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 8
Manufacturer series: AC
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Family: AC
Kind of output: 3-state
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+49.36 грн
13+33.25 грн
25+29.66 грн
38+27.83 грн
114+22.75 грн
190+20.33 грн
Мінімальне замовлення: 10
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MC74AC573DTR2G MC74AC573-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
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MC74AC573DWR2G MC74AC573-D.pdf
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: AC
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FDC6330L fdc6330l-d.pdf
FDC6330L
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; P-Channel; SMD; SuperSOT-6
Type of integrated circuit: power switch
Output current: 2.3A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: SuperSOT-6
On-state resistance: 0.125Ω
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Kind of package: reel; tape
Kind of integrated circuit: high-side
на замовлення 5570 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.28 грн
13+32.91 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MMBT5401LT3G mmbt5401lt1-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 60...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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MMBT5401 MMBT5401.pdf
MMBT5401
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 50...240
Mounting: SMD
Kind of package: reel; tape
Frequency: 100...300MHz
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KSD1408YTU ksd1408-d.pdf FAIRS17863-1.pdf?t.download=true&u=5oefqw
KSD1408YTU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 4A; 25W; TO220FP
Type of transistor: NPN
Mounting: THT
Power dissipation: 25W
Collector current: 4A
Collector-emitter voltage: 80V
Current gain: 120...240
Frequency: 8MHz
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
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KSD1692YS KSD1692YS.pdf
KSD1692YS
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 3A; 15W; TO126ISO
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: TO126ISO
Current gain: 4000...12000
Mounting: THT
Kind of package: tube
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KSD5041RTA KSD5041.pdf
KSD5041RTA
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 20V; 5A; 0.75W; TO92
Type of transistor: NPN
Mounting: THT
Power dissipation: 0.75W
Collector current: 5A
Collector-emitter voltage: 20V
Current gain: 340...600
Frequency: 150MHz
Kind of package: Ammo Pack
Polarisation: bipolar
Case: TO92
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UJ3D1220KSD UJ3D1220KSD.pdf
UJ3D1220KSD
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; UJ3D
Manufacturer series: UJ3D
Features of semiconductor devices: MPS
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Power dissipation: 53.2/468.8W
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Case: TO247-3
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UJ3D1210KSD UJ3D1210KSD-D.PDF
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO247-3; 13W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Power dissipation: 13W
Max. forward voltage: 1200V
Load current: 5A
Max. forward impulse current: 63A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
Case: TO247-3
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1N4006FFG 1N4001-D.PDF
1N4006FFG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
на замовлення 3849 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
321+1.40 грн
417+1.00 грн
432+0.97 грн
455+0.92 грн
500+0.88 грн
Мінімальне замовлення: 321
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1N4006G 1N4001-D.PDF
1N4006G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; bulk; Ifsm: 30A; CASE59; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 1000pcs.
на замовлення 1665 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.77 грн
62+6.75 грн
100+4.48 грн
500+3.42 грн
1000+3.08 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
FSQ0170RNA fsq0270rna-d.pdf
FSQ0170RNA
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 700mA; 700V; 100kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.7A
Output voltage: 700V
Frequency: 0.1MHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 11Ω
Duty cycle factor: 55...65%
Power: 13W
Application: SMPS
Operating voltage: 8...19V DC
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NDUL03N150CG ena2218-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 2.5A; 50W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 50W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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MBRB20100CTT4G mbrb20100ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Kind of package: reel; tape
Max. load current: 20A
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+126.53 грн
10+94.16 грн
25+80.83 грн
50+70.00 грн
100+68.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
DTC123JET1G DTC123JET1G-DTE.PDF
DTC123JET1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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DTC123EET1G dtc123e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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DTC123EM3T5G dtc123e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
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DTC123JM3T5G dtc123j-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Quantity in set/package: 8000pcs.
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DTC123TET1G dtc123t-d.pdf
DTC123TET1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2/0.3W
Case: SOT416
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
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MC14021BDR2G mc14014b-d.pdf
MC14021BDR2G
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; SO16; HEF4000B; -55÷125°C; 3÷18VDC
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 600µA
Supply voltage: 3...18V DC
Case: SO16
Kind of integrated circuit: 8bit; asynchronous; static shift register; synchronous
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+34.10 грн
19+22.33 грн
25+20.08 грн
100+17.50 грн
250+16.17 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MC14014BDG MC14014B-D.pdf
MC14014BDG
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; 8bit,shift register; Ch: 1; CMOS; SMD; SOIC16; HEF4000B
Operating temperature: -55...125°C
Mounting: SMD
Supply voltage: 3...18V DC
Case: SOIC16
Kind of integrated circuit: 8bit; shift register
Type of integrated circuit: digital
Kind of package: tube
Technology: CMOS
Number of channels: 1
Family: HEF4000B
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.72 грн
22+19.25 грн
25+17.50 грн
48+16.25 грн
96+15.00 грн
144+14.33 грн
288+14.00 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
NCP1393BDR2G ncp1393%20bd.pdf
NCP1393BDR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
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NCP1392BDR2G ncp1392-d.pdf
NCP1392BDR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Output current: -1...0.5A
Case: SO8
Mounting: SMD
Topology: MOSFET half-bridge
Pulse fall time: 20ns
Operating temperature: -40...125°C
Impulse rise time: 40ns
Supply voltage: 8...17.5V DC
Voltage class: 600V
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NCP1395BDR2G ncp1395-d.pdf
NCP1395BDR2G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 1A; 48.5kHz÷1.11MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 1A
Frequency: 48.5kHz...1.11MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.3...20V DC
Operating temperature: -40...125°C
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NCP1396BDR2G ncp1396d.pdf
NCP1396BDR2G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 500mA÷1A; 58.2÷575kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: 0.5...1A
Frequency: 58.2...575kHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Operating voltage: 9.5...20V DC
Operating temperature: -40...125°C
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FDP027N08B-F102 fdp027n08b-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 223A; Idm: 892A; 246W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 223A
Pulsed drain current: 892A
Power dissipation: 246W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 137nC
Kind of package: tube
Kind of channel: enhancement
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FCP22N60N FCP22N60N.pdf
FCP22N60N
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: SuperMOS®
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±45V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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SMF12CT1G smf05c-d.pdf
SMF12CT1G
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 13.3÷15V; 6A; 100W; common anode; SC88; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 13.3...15V
Semiconductor structure: common anode
Mounting: SMD
Case: SC88
Max. off-state voltage: 12V
Number of channels: 5
Kind of package: reel; tape
Leakage current: 0.1µA
Max. forward impulse current: 6A
Version: ESD
Peak pulse power dissipation: 0.1kW
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NTD18N06LT4G ntd18n06l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 10A; 55W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 10A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 65mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDC6561AN FDC6561AN.pdf
FDC6561AN
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 847 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+62.82 грн
10+41.83 грн
50+28.83 грн
100+24.67 грн
250+20.42 грн
500+18.17 грн
Мінімальне замовлення: 8
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GBPC2510 GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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GBPC2510W GBPCxx.PDF
Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; Ufmax: 1.1V; If: 25A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
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1N5356BRLG 1N53xx.PDF
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 19V; reel,tape; CASE017AA; single diode; 1N53xxB
Kind of package: reel; tape
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Tolerance: ±5%
Power dissipation: 5W
Zener voltage: 19V
Manufacturer series: 1N53xxB
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MUN5335DW1T1G MUN5335DW1.PDF
MUN5335DW1T1G
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.187W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 5745 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+16.15 грн
46+9.08 грн
65+6.48 грн
100+5.64 грн
500+4.15 грн
1000+3.67 грн
1500+3.42 грн
3000+3.06 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
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