| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MC14044BDG | ONSEMI |
 Category: LatchesDescription: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B Case: SO16 Mounting: SMD Kind of package: tube Supply voltage: 3...18V DC Type of integrated circuit: digital Kind of output: 3-state Operating temperature: -40...85°C Trigger: level-triggered Family: HEF4000B Kind of integrated circuit: RS latch Number of channels: 4 |
на замовлення 141 шт: термін постачання 14-30 дні (днів) |
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MC74VHC4066DR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C Technology: CMOS Quiescent current: 40µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74VHC4066DTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: TSSOP14 Supply voltage: 2...12V DC Manufacturer series: VHC Operating temperature: -55...125°C Technology: CMOS Quiescent current: 40µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MMBTA56LT3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 7503 шт: термін постачання 14-30 дні (днів) |
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MMBTA56LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 31906 шт: термін постачання 14-30 дні (днів) |
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NCP1250BP65G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -500...300mA Frequency: 61...71kHz Number of channels: 1 Case: DIP8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 8.8...28V DC |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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| BAW56M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common anode; double Features of semiconductor devices: small signal Case: SOT723 Max. forward voltage: 1V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LM317MABDTG | ONSEMI |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 1.2...40V Manufacturer series: LM317M |
на замовлення 1171 шт: термін постачання 14-30 дні (днів) |
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| SRV05-4MR6T1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: TSOP6 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N4007G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Case: CASE59 Kind of package: bulk Max. forward voltage: 1.1V Manufacturer standard package: 1000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC100EPT22DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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MC74ACT138DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT Type of integrated circuit: digital Number of channels: 1 Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Number of inputs: 1 Family: ACT Kind of integrated circuit: decoder; demultiplexer Manufacturer series: ACT Technology: TTL |
на замовлення 1793 шт: термін постачання 14-30 дні (днів) |
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LP2951ACDM-3.3RG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.1A Case: Micro8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 3251 шт: термін постачання 14-30 дні (днів) |
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BSS138-G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
на замовлення 559 шт: термін постачання 14-30 дні (днів) |
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2N7002KT7G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.38A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 5A Gate charge: 0.7nC Version: ESD |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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FDS4435BZ | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM393EDR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Operating voltage: 2...36V Mounting: SMT Case: SO8 Operating temperature: 0...70°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 20nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BSS138K | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.4nC |
на замовлення 3437 шт: термін постачання 14-30 дні (днів) |
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BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.7nC |
на замовлення 11027 шт: термін постачання 14-30 дні (днів) |
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FCB110N65F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Pulsed drain current: 105A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 98nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTS2101PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323 Power dissipation: 0.29W Polarisation: unipolar Drain current: -1.1A Kind of channel: enhancement Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape Case: SC70; SOT323 On-state resistance: 0.1Ω Mounting: SMD |
на замовлення 2792 шт: термін постачання 14-30 дні (днів) |
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1N4148-T26A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: Ammo Pack Reverse recovery time: 4ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4736A-T50A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; DO41; single diode; Ammo Pack; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4736ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 6.8V; DO41; single diode; reel,tape; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N47xxA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74AC125DG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS Mounting: SMD Case: SO14 Manufacturer series: AC Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 2...6V DC Quiescent current: 80µA |
на замовлення 384 шт: термін постачання 14-30 дні (днів) |
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BAT54T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns Max. forward impulse current: 0.6A Leakage current: 2µA |
на замовлення 12247 шт: термін постачання 14-30 дні (днів) |
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MBRS130LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.395V Kind of package: reel; tape |
на замовлення 3586 шт: термін постачання 14-30 дні (днів) |
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| FDBL0150N60 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L Type of transistor: N-MOSFET Power dissipation: 357W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 60V Gate-source voltage: ±20V On-state resistance: 1.5mΩ Gate charge: 130nC Polarisation: unipolar Drain current: 240A |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FCD7N60TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 21A Gate charge: 23nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV3843BVD1R2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NCV3843BVDR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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FCD620N60ZF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 21.9A Gate charge: 20nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FCA20N60-F109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 60A Gate charge: 75nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FCMT360N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4 Type of transistor: N-MOSFET Power dissipation: 83W Case: PQFN4 Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.36Ω Pulsed drain current: 25A Polarisation: unipolar Drain current: 10A |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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TIP42AG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB Type of transistor: PNP Polarisation: bipolar Power dissipation: 65W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 15...75 Frequency: 3MHz Collector current: 6A Collector-emitter voltage: 60V |
на замовлення 145 шт: термін постачання 14-30 дні (днів) |
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FCD5N60TM-WS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK Mounting: SMD Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DPAK On-state resistance: 0.95Ω Pulsed drain current: 13.8A Power dissipation: 54W Gate charge: 16nC Polarisation: unipolar Drain current: 4.6A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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SI4435DY | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1033 шт: термін постачання 14-30 дні (днів) |
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TIP36CG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 25A Power dissipation: 125W Case: TO247-3 Mounting: THT Kind of package: tube Frequency: 3MHz Current gain: 15...75 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
на замовлення 1952 шт: термін постачання 14-30 дні (днів) |
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| NTBG060N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A Gate charge: 74nC Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
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NTP067N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 80nC Kind of channel: enhancement Pulsed drain current: 112A Power dissipation: 266W Kind of package: tube |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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| NTBG025N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 284A Gate charge: 164nC Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W Case: H-PSOF8L Kind of package: reel; tape Pulsed drain current: 2055A Power dissipation: 161W Gate charge: 131nC Polarisation: unipolar Drain current: 312A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
| NTBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W Case: H-PSOF8L Kind of package: reel; tape Pulsed drain current: 2137A Power dissipation: 147W Gate charge: 115nC Polarisation: unipolar Drain current: 272A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Power dissipation: 0.36W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±8V On-state resistance: 389mΩ Mounting: SMD Gate charge: 2.6nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FCB260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK Type of transistor: N-MOSFET Power dissipation: 90W Case: D2PAK Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.26Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 12A |
на замовлення 709 шт: термін постачання 14-30 дні (днів) |
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FCD260N65S3 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Power dissipation: 90W Case: DPAK Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.26Ω Pulsed drain current: 30A Polarisation: unipolar Drain current: 12A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTPF360N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP Type of transistor: N-MOSFET Power dissipation: 26W Case: TO220FP Mounting: THT Gate charge: 17.5nC Kind of package: tube Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.36Ω Pulsed drain current: 28A Polarisation: unipolar Drain current: 10A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||||
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NTP165N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 142W Case: TO220-3 Mounting: THT Gate charge: 35nC Kind of package: tube Pulsed drain current: 53A Polarisation: unipolar Drain current: 19A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.165Ω |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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| NTBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 316W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape On-state resistance: 4.4mΩ Pulsed drain current: 2255A Gate charge: 90.4nC Drain current: 187A Kind of channel: enhancement Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||||||
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1N5388BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
на замовлення 3608 шт: термін постачання 14-30 дні (днів) |
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MC78M15CDTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 17.5...30V |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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MC78M15CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 17.5...30V Heatsink thickness: 0.508...0.61mm |
на замовлення 474 шт: термін постачання 14-30 дні (днів) |
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| LM2596DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2596TVADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; TO220-5; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: TO220-5 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
SS8550CTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 1.5A Power dissipation: 1W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| LM358DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: 0...70°C Kind of package: reel; tape Input offset voltage: 9mV Input offset current: 150nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBT3906TT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 |
LM339DTBR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 4 Mounting: SMT Case: TSSOP14 Input offset voltage: 5mV Input offset current: 5nA Input bias current: 25nA Operating voltage: 3...36V Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MC14044BDG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Case: SO16
Mounting: SMD
Kind of package: tube
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Trigger: level-triggered
Family: HEF4000B
Kind of integrated circuit: RS latch
Number of channels: 4
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; HEF4000B
Case: SO16
Mounting: SMD
Kind of package: tube
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Kind of output: 3-state
Operating temperature: -40...85°C
Trigger: level-triggered
Family: HEF4000B
Kind of integrated circuit: RS latch
Number of channels: 4
на замовлення 141 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 45.28 грн |
| 15+ | 29.43 грн |
| 25+ | 24.20 грн |
| 48+ | 21.28 грн |
| 63+ | 15.62 грн |
| MC74VHC4066DR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 2÷12VDC
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MC74VHC4066DTR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; TSSOP14; 40uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...12V DC
Manufacturer series: VHC
Operating temperature: -55...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| MMBTA56LT3G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 7503 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 15.23 грн |
| 61+ | 7.10 грн |
| 100+ | 5.65 грн |
| 250+ | 4.29 грн |
| 500+ | 3.59 грн |
| 633+ | 1.54 грн |
| 1738+ | 1.47 грн |
| MMBTA56LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 31906 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 15.17 грн |
| 48+ | 9.04 грн |
| 78+ | 5.54 грн |
| 100+ | 4.48 грн |
| 250+ | 3.43 грн |
| 500+ | 2.86 грн |
| 692+ | 1.42 грн |
| 1901+ | 1.34 грн |
| NCP1250BP65G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...300mA
Frequency: 61...71kHz
Number of channels: 1
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.8...28V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 8.8÷28VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...300mA
Frequency: 61...71kHz
Number of channels: 1
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 8.8...28V DC
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 73.93 грн |
| 10+ | 50.63 грн |
| 30+ | 43.08 грн |
| 40+ | 42.31 грн |
| 50+ | 40.76 грн |
| BAW56M3T5G |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 6ns; SOT723; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Case: SOT723
Max. forward voltage: 1V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| LM317MABDTG |
|
Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Manufacturer series: LM317M
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 1.2...40V
Manufacturer series: LM317M
на замовлення 1171 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 35.12 грн |
| 20+ | 22.05 грн |
| 28+ | 15.88 грн |
| 75+ | 13.99 грн |
| 76+ | 13.04 грн |
| 207+ | 12.27 грн |
| SRV05-4MR6T1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 4
Kind of package: reel; tape
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В кошику
од. на суму грн.
| 1N4007G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; CASE59; bulk; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Case: CASE59
Kind of package: bulk
Max. forward voltage: 1.1V
Manufacturer standard package: 1000pcs.
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В кошику
од. на суму грн.
| MC100EPT22DG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.24 грн |
| 2+ | 634.17 грн |
| 5+ | 598.99 грн |
| MC74ACT138DR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of inputs: 1
Family: ACT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: ACT
Technology: TTL
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 1; TTL; SMD; SO16; ACT
Type of integrated circuit: digital
Number of channels: 1
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of inputs: 1
Family: ACT
Kind of integrated circuit: decoder; demultiplexer
Manufacturer series: ACT
Technology: TTL
на замовлення 1793 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.04 грн |
| 18+ | 24.89 грн |
| 25+ | 23.17 грн |
| 100+ | 21.20 грн |
| 250+ | 19.99 грн |
| 500+ | 18.54 грн |
| 1000+ | 17.42 грн |
| LP2951ACDM-3.3RG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; Micro8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: Micro8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 3251 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.90 грн |
| 14+ | 32.87 грн |
| 25+ | 30.21 грн |
| 72+ | 13.64 грн |
| 196+ | 12.96 грн |
| BSS138-G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
на замовлення 559 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.04 грн |
| 29+ | 14.85 грн |
| 50+ | 10.98 грн |
| 100+ | 9.87 грн |
| 180+ | 5.41 грн |
| 495+ | 5.15 грн |
| 2N7002KT7G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Gate charge: 0.7nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 380mA; Idm: 5A; 420mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.38A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 5A
Gate charge: 0.7nC
Version: ESD
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.48 грн |
| 37+ | 12.01 грн |
| FDS4435BZ |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LM393EDR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 20nA
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| BSS138K |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
на замовлення 3437 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 22.18 грн |
| 46+ | 9.53 грн |
| 57+ | 7.55 грн |
| 100+ | 6.81 грн |
| 420+ | 2.33 грн |
| 1155+ | 2.20 грн |
| BSS138 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
на замовлення 11027 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 21.26 грн |
| 42+ | 10.30 грн |
| 47+ | 9.20 грн |
| 52+ | 8.38 грн |
| 100+ | 7.56 грн |
| 250+ | 6.44 грн |
| 500+ | 5.60 грн |
| 542+ | 1.80 грн |
| 1488+ | 1.71 грн |
| FCB110N65F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Pulsed drain current: 105A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTS2101PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Power dissipation: 0.29W
Polarisation: unipolar
Drain current: -1.1A
Kind of channel: enhancement
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 0.1Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -1.1A; 0.29W; SC70,SOT323
Power dissipation: 0.29W
Polarisation: unipolar
Drain current: -1.1A
Kind of channel: enhancement
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC70; SOT323
On-state resistance: 0.1Ω
Mounting: SMD
на замовлення 2792 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 38.81 грн |
| 20+ | 22.31 грн |
| 25+ | 18.02 грн |
| 50+ | 15.36 грн |
| 100+ | 13.39 грн |
| 154+ | 6.35 грн |
| 424+ | 6.01 грн |
| 1N4148-T26A |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.3A; Ifsm: 4A; DO35; Ammo Pack; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: Ammo Pack
Reverse recovery time: 4ns
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од. на суму грн.
| 1N4736A-T50A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; DO41; single diode; Ammo Pack; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Manufacturer series: 1N47xxA
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| 1N4736ATR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 6.8V; DO41; single diode; reel,tape; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N47xxA
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од. на суму грн.
| MC74AC125DG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; AC; tube
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS
Mounting: SMD
Case: SO14
Manufacturer series: AC
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 2...6V DC
Quiescent current: 80µA
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 41.59 грн |
| 15+ | 28.66 грн |
| 25+ | 25.92 грн |
| 55+ | 24.29 грн |
| 56+ | 17.68 грн |
| 153+ | 16.73 грн |
| BAT54T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Max. forward impulse current: 0.6A
Leakage current: 2µA
на замовлення 12247 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.24 грн |
| 63+ | 6.87 грн |
| 76+ | 5.66 грн |
| 100+ | 4.29 грн |
| 148+ | 2.90 грн |
| 250+ | 2.40 грн |
| 500+ | 2.17 грн |
| 962+ | 1.01 грн |
| 2648+ | 0.96 грн |
| MBRS130LT3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.395V
Kind of package: reel; tape
на замовлення 3586 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.27 грн |
| 20+ | 21.97 грн |
| 24+ | 18.36 грн |
| 50+ | 12.79 грн |
| 100+ | 11.33 грн |
| 124+ | 7.98 грн |
| 339+ | 7.55 грн |
| FDBL0150N60 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 357W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Gate charge: 130nC
Polarisation: unipolar
Drain current: 240A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Power dissipation: 357W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Gate charge: 130nC
Polarisation: unipolar
Drain current: 240A
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| FCD7N60TM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21A
Gate charge: 23nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCV3843BVD1R2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NCV3843BVDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FCD620N60ZF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21.9A
Gate charge: 20nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 21.9A
Gate charge: 20nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FCA20N60-F109 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 75nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 60A
Gate charge: 75nC
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| FCMT360N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 83W
Case: PQFN4
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Polarisation: unipolar
Drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 83W
Case: PQFN4
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Polarisation: unipolar
Drain current: 10A
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TIP42AG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 15...75
Frequency: 3MHz
Collector current: 6A
Collector-emitter voltage: 60V
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 15...75
Frequency: 3MHz
Collector current: 6A
Collector-emitter voltage: 60V
на замовлення 145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.61 грн |
| 10+ | 73.80 грн |
| 24+ | 41.28 грн |
| 66+ | 39.05 грн |
| FCD5N60TM-WS |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Pulsed drain current: 13.8A
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DPAK
On-state resistance: 0.95Ω
Pulsed drain current: 13.8A
Power dissipation: 54W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 4.6A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SI4435DY |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1033 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.28 грн |
| 7+ | 65.91 грн |
| 23+ | 43.51 грн |
| 62+ | 41.19 грн |
| 500+ | 39.56 грн |
| TIP36CG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 15...75
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Current gain: 15...75
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5248BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
на замовлення 1952 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.94 грн |
| 69+ | 6.26 грн |
| 76+ | 5.66 грн |
| 100+ | 4.45 грн |
| 200+ | 3.96 грн |
| 250+ | 3.81 грн |
| 500+ | 3.36 грн |
| 642+ | 1.52 грн |
| 1764+ | 1.44 грн |
| NTBG060N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Gate charge: 74nC
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTP067N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 112A
Power dissipation: 266W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Pulsed drain current: 112A
Power dissipation: 266W
Kind of package: tube
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 611.79 грн |
| 2+ | 477.13 грн |
| 3+ | 405.90 грн |
| 5+ | 393.89 грн |
| 7+ | 383.59 грн |
| 10+ | 369.00 грн |
| NTBG025N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 284A
Gate charge: 164nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 284A
Gate charge: 164nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NTBLS1D5N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Case: H-PSOF8L
Kind of package: reel; tape
Pulsed drain current: 2055A
Power dissipation: 161W
Gate charge: 131nC
Polarisation: unipolar
Drain current: 312A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 312A; Idm: 2055A; 161W
Case: H-PSOF8L
Kind of package: reel; tape
Pulsed drain current: 2055A
Power dissipation: 161W
Gate charge: 131nC
Polarisation: unipolar
Drain current: 312A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| NTBLS1D7N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Case: H-PSOF8L
Kind of package: reel; tape
Pulsed drain current: 2137A
Power dissipation: 147W
Gate charge: 115nC
Polarisation: unipolar
Drain current: 272A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 272A; Idm: 2137A; 147W
Case: H-PSOF8L
Kind of package: reel; tape
Pulsed drain current: 2137A
Power dissipation: 147W
Gate charge: 115nC
Polarisation: unipolar
Drain current: 272A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| FDG1024NZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.36W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 389mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Power dissipation: 0.36W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±8V
On-state resistance: 389mΩ
Mounting: SMD
Gate charge: 2.6nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FCB260N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: D2PAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 12A
на замовлення 709 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 301.28 грн |
| 7+ | 157.04 грн |
| 18+ | 148.46 грн |
| 100+ | 145.03 грн |
| 250+ | 142.45 грн |
| FCD260N65S3 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 12A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Polarisation: unipolar
Drain current: 12A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NTPF360N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Polarisation: unipolar
Drain current: 10A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 28A; 26W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 26W
Case: TO220FP
Mounting: THT
Gate charge: 17.5nC
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Pulsed drain current: 28A
Polarisation: unipolar
Drain current: 10A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| NTP165N65S3H |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220-3
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 53A
Polarisation: unipolar
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 142W
Case: TO220-3
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Pulsed drain current: 53A
Polarisation: unipolar
Drain current: 19A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
на замовлення 81 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.75 грн |
| 5+ | 223.12 грн |
| 10+ | 216.25 грн |
| 13+ | 211.10 грн |
| 20+ | 202.52 грн |
| NTBLS4D0N15MC |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.4mΩ
Pulsed drain current: 2255A
Gate charge: 90.4nC
Drain current: 187A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 4.4mΩ
Pulsed drain current: 2255A
Gate charge: 90.4nC
Drain current: 187A
Kind of channel: enhancement
Drain-source voltage: 150V
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| 1N5388BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
на замовлення 3608 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.21 грн |
| 14+ | 32.95 грн |
| 15+ | 28.83 грн |
| 50+ | 21.71 грн |
| 68+ | 14.50 грн |
| 186+ | 13.73 грн |
| 2000+ | 13.22 грн |
| MC78M15CDTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.48 грн |
| 31+ | 14.16 грн |
| 33+ | 13.13 грн |
| 75+ | 12.01 грн |
| 83+ | 11.76 грн |
| 150+ | 11.33 грн |
| MC78M15CTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Heatsink thickness: 0.508...0.61mm
на замовлення 474 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 35.12 грн |
| 17+ | 26.00 грн |
| 25+ | 24.20 грн |
| 50+ | 22.74 грн |
| 56+ | 17.68 грн |
| 152+ | 16.73 грн |
| LM2596DSADJR4G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| LM2596TVADJG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: TO220-5
Mounting: THT
Kind of package: tube
товару немає в наявності
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од. на суму грн.
| SS8550CTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
товару немає в наявності
В кошику
од. на суму грн.
| LM358DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset voltage: 9mV
Input offset current: 150nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: 0...70°C
Kind of package: reel; tape
Input offset voltage: 9mV
Input offset current: 150nA
товару немає в наявності
В кошику
од. на суму грн.
| MMBT3906TT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| NSVMMBT3906TT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| LM339DTBR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Input bias current: 25nA
Operating voltage: 3...36V
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 4
Mounting: SMT
Case: TSSOP14
Input offset voltage: 5mV
Input offset current: 5nA
Input bias current: 25nA
Operating voltage: 3...36V
Operating temperature: 0...70°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.