| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
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| LM2576D2T-005G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LMV339DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA Kind of package: reel; tape Mounting: SMT Operating temperature: -40...85°C Input bias current: 1nA Delay time: 1.5µs Input offset voltage: 9mV Number of comparators: 4 Operating voltage: 2.7...5V Input offset current: 1nA Type of integrated circuit: comparator Case: SO14 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBRD835LT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Max. load current: 16A |
на замовлення 561 шт: термін постачання 21-30 дні (днів) |
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74AC541MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
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74AC541MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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74AC541SC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
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MC7812BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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80SQ045NRLG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
на замовлення 1355 шт: термін постачання 21-30 дні (днів) |
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BC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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SBC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||||||
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SBC807-25WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZBZX84C3V3LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FOD817D3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler Type of optocoupler: optocoupler |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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ESD7551N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Version: ESD Peak pulse power dissipation: 0.25W Case: CASE714AB; X2DFN2 |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
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ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 6591 шт: термін постачання 21-30 дні (днів) |
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MMSD4148T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Max. load current: 0.5A Capacitance: 4pF Features of semiconductor devices: fast switching Power dissipation: 0.425W |
на замовлення 7633 шт: термін постачання 21-30 дні (днів) |
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MMSD4148T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Capacitance: 4pF Leakage current: 5µA Power dissipation: 0.425W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMMSD4148T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMMSD4148T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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H11L3M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Mounting: THT Manufacturer series: H11LXM Case: DIP6 Kind of output: Schmitt trigger Type of optocoupler: optocoupler Turn-on time: 0.1µs Turn-off time: 0.12µs Number of channels: 1 Insulation voltage: 4.17kV |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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H11L2M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM Mounting: THT Manufacturer series: H11LXM Case: DIP6 Kind of output: Schmitt trigger Type of optocoupler: optocoupler Turn-on time: 4µs Turn-off time: 4µs Number of channels: 1 Insulation voltage: 4.17kV |
на замовлення 898 шт: термін постачання 21-30 дні (днів) |
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H11L3SR2M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps Mounting: SMD Manufacturer series: H11L3 Transfer rate: 1Mbps Case: PDIP6 Kind of output: gate; logic Type of optocoupler: optocoupler Output voltage: 0...16V Turn-on time: 1µs Turn-off time: 1.2µs Number of channels: 1 Max. off-state voltage: 6V Insulation voltage: 4.17kV |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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DF01S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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| NTTFS5C453NLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTTFS5C453NLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS5C453NLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFS5C453NLWFTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8 Mounting: SMD Case: WDFN8 On-state resistance: 3.1mΩ Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Gate-source voltage: ±20V Gate charge: 35nC Power dissipation: 34W Drain current: 107A Drain-source voltage: 40V Pulsed drain current: 740A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L013N120M3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 254nC Power dissipation: 340W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 505A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L014N120M3P | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Mounting: THT Case: TO247-4 On-state resistance: 29mΩ Kind of package: tube Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Gate-source voltage: -10...22V Gate charge: 322nC Power dissipation: 343W Drain current: 107A Drain-source voltage: 1.2kV Pulsed drain current: 407A Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 80...140 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NDS355AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Gate charge: 5nC |
на замовлення 1302 шт: термін постачання 21-30 дні (днів) |
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NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 0.16Ω Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 337mΩ Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 224mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 377mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 93 шт: термін постачання 21-30 дні (днів) |
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| MOC3051SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Output voltage: 600V Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3051SR2M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Output voltage: 600V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3051SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3051TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3051VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC305X Conform to the norm: VDE Output voltage: 600V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LMV393DMR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: Micro8 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Delay time: 1.5µs Operating voltage: 2.7...5V |
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| LMV393DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Delay time: 1.5µs Operating voltage: 2.7...5V |
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| NSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape Case: TSOP6 Type of diode: TVS array Semiconductor structure: unidirectional Application: USB Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Mounting: SMD |
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NCV78L05ABDR2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.7V Output voltage: 5V Output current: 0.1A Case: SO8 Mounting: SMD Manufacturer series: MC78L00A Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±5% Number of channels: 1 Application: automotive industry Input voltage: 7...20V |
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| MOC3022SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
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| MOC3022SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC302XM |
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|
LM385BZ-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA Reference voltage: 1.235V |
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В кошику од. на суму грн. | ||||||||||||||||||
|
SMUN5113DW1T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: PNP x2 Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Application: automotive industry Polarisation: bipolar Kind of transistor: BRT |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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MUN5213DW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ Type of transistor: NPN x2 Case: SC70-6; SC88; SOT363 Mounting: SMD Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Current gain: 140 Base resistor: 47kΩ Base-emitter resistor: 47kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
на замовлення 569 шт: термін постачання 21-30 дні (днів) |
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| BAS21TMR6T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: triple independent Case: SC74 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
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| MOC3072SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: reel; tape |
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| MOC3072SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: tube |
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| MOC3072TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3072M Conform to the norm: VDE Kind of package: tube |
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|
H11AA4SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Manufacturer series: H11AA Mounting: SMD Type of optocoupler: optocoupler Number of channels: 1 Case: PDIP6 Kind of output: transistor CTR@If: 100%@10mA Collector-emitter voltage: 100V Insulation voltage: 4.17kV |
на замовлення 969 шт: термін постачання 21-30 дні (днів) |
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H11AA4M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 100V Case: DIP6 CTR@If: 100%@10mA |
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| NTMFS4C10NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 340A Power dissipation: 23.6W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.95mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. |
| LM2576D2T-ADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| LM2576D2T-005G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
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| LMV339DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Delay time: 1.5µs
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: SO14
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 1.5us; 2.7÷5V; SMT; SO14; reel,tape; Iio: 1nA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...85°C
Input bias current: 1nA
Delay time: 1.5µs
Input offset voltage: 9mV
Number of comparators: 4
Operating voltage: 2.7...5V
Input offset current: 1nA
Type of integrated circuit: comparator
Case: SO14
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| MBRD835LT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.87 грн |
| 11+ | 37.97 грн |
| 50+ | 30.67 грн |
| 100+ | 29.77 грн |
| 74AC541MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.64 грн |
| 11+ | 39.44 грн |
| 74AC541MTCX |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.99 грн |
| 12+ | 35.18 грн |
| 25+ | 31.82 грн |
| 50+ | 29.77 грн |
| 100+ | 27.96 грн |
| 74AC541SC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.39 грн |
| 13+ | 31.82 грн |
| 25+ | 26.41 грн |
| 114+ | 21.65 грн |
| MC7812BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
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| 80SQ045NRLG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 1355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.52 грн |
| 10+ | 42.07 грн |
| 25+ | 38.13 грн |
| 50+ | 35.26 грн |
| 100+ | 32.64 грн |
| 200+ | 31.90 грн |
| BC807-25LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| SBC807-25LT3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SBC807-25WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| SZBZX84C3V3LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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| FOD817D3S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 7.42 грн |
| ESD7551N2T5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 626 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.36 грн |
| 47+ | 8.86 грн |
| 57+ | 7.22 грн |
| 95+ | 4.33 грн |
| 111+ | 3.71 грн |
| ESD9X5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 6591 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 93+ | 4.43 грн |
| 133+ | 3.08 грн |
| 157+ | 2.62 грн |
| 250+ | 2.13 грн |
| 500+ | 1.83 грн |
| 1000+ | 1.57 грн |
| 2000+ | 1.54 грн |
| MMSD4148T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
на замовлення 7633 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.42 грн |
| 209+ | 1.97 грн |
| 218+ | 1.89 грн |
| 243+ | 1.69 грн |
| 258+ | 1.59 грн |
| 278+ | 1.48 грн |
| 500+ | 1.39 грн |
| 1000+ | 1.30 грн |
| 1500+ | 1.25 грн |
| MMSD4148T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
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| SMMSD4148T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| SMMSD4148T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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| H11L3M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 798 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.12 грн |
| 11+ | 37.89 грн |
| 25+ | 35.10 грн |
| 50+ | 33.05 грн |
| 100+ | 31.00 грн |
| 500+ | 30.75 грн |
| H11L2M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 898 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.82 грн |
| 50+ | 24.60 грн |
| H11L3SR2M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Mounting: SMD
Manufacturer series: H11L3
Transfer rate: 1Mbps
Case: PDIP6
Kind of output: gate; logic
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Mounting: SMD
Manufacturer series: H11L3
Transfer rate: 1Mbps
Case: PDIP6
Kind of output: gate; logic
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 68.00 грн |
| 10+ | 43.71 грн |
| 100+ | 39.03 грн |
| DF01S |
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Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.94 грн |
| 11+ | 40.59 грн |
| NTTFS5C453NLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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| NTTFS5C453NLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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| NVTFS5C453NLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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| NVTFS5C453NLWFTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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| NTH4L013N120M3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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| NTH4L014N120M3P |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
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| DTC114YM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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| NDS355AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1302 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.62 грн |
| 13+ | 32.64 грн |
| 14+ | 29.60 грн |
| 50+ | 22.55 грн |
| 100+ | 20.01 грн |
| 500+ | 15.34 грн |
| 1000+ | 14.43 грн |
| NTHL160N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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| NTBG160N120SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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| NVBG160N120SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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| NVHL160N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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| NTH4L160N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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| NVH4L160N120SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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| FGH50T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 93 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 305.57 грн |
| 3+ | 255.04 грн |
| 10+ | 225.52 грн |
| 30+ | 203.37 грн |
| MOC3051SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
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| MOC3051SR2M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
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| MOC3051SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
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| MOC3051TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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| MOC3051VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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| LMV393DMR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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| LMV393DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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| NSP2201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
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| NCV78L05ABDR2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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| MOC3022SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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| MOC3022SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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| LM385BZ-1.2RAG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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| SMUN5113DW1T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 34+ | 12.14 грн |
| 54+ | 7.71 грн |
| 68+ | 6.07 грн |
| 104+ | 3.98 грн |
| MUN5213DW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 569 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.90 грн |
| 42+ | 9.92 грн |
| 71+ | 5.84 грн |
| 100+ | 4.65 грн |
| 500+ | 3.05 грн |
| BAS21TMR6T1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| MOC3072SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
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| MOC3072SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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| MOC3072TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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| H11AA4SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Manufacturer series: H11AA
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Case: PDIP6
Kind of output: transistor
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Manufacturer series: H11AA
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Case: PDIP6
Kind of output: transistor
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Insulation voltage: 4.17kV
на замовлення 969 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.82 грн |
| 11+ | 37.89 грн |
| 25+ | 32.15 грн |
| 50+ | 31.49 грн |
| H11AA4M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
товару немає в наявності
В кошику
од. на суму грн.
| NTMFS4C10NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.






















