| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NSVMMUN2231LT1G | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
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| NSVMMUN2236LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 100kΩ Application: automotive industry Base-emitter resistor: 100kΩ Current gain: 80...150 Quantity in set/package: 3000pcs. |
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| NSVMMUN2237LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Application: automotive industry Base-emitter resistor: 22kΩ Current gain: 80...140 Quantity in set/package: 3000pcs. |
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FQN1N50CTA | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.24A Power dissipation: 2.08W Case: TO92 Gate-source voltage: ±30V On-state resistance: 6Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhancement Gate charge: 6.4nC Pulsed drain current: 3.04A |
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| NCV33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC; SO14; 3.5mV Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 5...18V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 7V/μs Integrated circuit features: low noise Input offset voltage: 3.5mV Kind of package: reel; tape Input bias current: 0.8µA Input offset current: 175nA |
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| NCP451AFCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Mounting: SMD Case: WLCSP6 Kind of package: reel; tape Type of integrated circuit: power switch Control voltage: 0...5.5V DC On-state resistance: 35mΩ Supply voltage: 0.75...5.5V DC Number of channels: 1 Output current: 3A Active logical level: high Kind of integrated circuit: high-side Kind of output: N-Channel |
на замовлення 5994 шт: термін постачання 14-30 дні (днів) |
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| NCP451FCT2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Case: WLCSP6 Mounting: SMD Supply voltage: 0.75...5.5V DC Kind of package: reel; tape Number of channels: 1 Output current: 3A Kind of output: N-Channel Kind of integrated circuit: high-side Active logical level: high Control voltage: 0...5.5V DC On-state resistance: 35mΩ |
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| MC10EP451FAG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop,register; Ch: 6; IN: 6; ECL; SMD; 125mA; 3GHz Type of integrated circuit: digital Kind of integrated circuit: D flip-flop; register Number of channels: 6 Mounting: SMD Operating temperature: -40...85°C Number of inputs: 6 Number of outputs: 6 Clock frequency: 3GHz Kind of output: complementary Kind of input: differential Technology: ECL Trigger: positive-edge-triggered Supply voltage: -5.5...-3V Quiescent current: 125mA |
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| MC100EP451FAG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6 Type of integrated circuit: digital Mounting: SMD Supply voltage: -5.5...-3V Quiescent current: 135mA Number of channels: 6 Number of inputs: 6 Number of outputs: 6 Manufacturer series: 100EP Clock frequency: 3GHz Kind of output: complementary Kind of integrated circuit: D flip-flop Kind of input: differential Technology: ECL Trigger: positive-edge-triggered Operating temperature: -40...85°C |
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| MC100EP451FAR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6 Type of integrated circuit: digital Mounting: SMD Supply voltage: -5.5...-3V Quiescent current: 135mA Number of channels: 6 Number of inputs: 6 Number of outputs: 6 Manufacturer series: 100EP Clock frequency: 3GHz Kind of output: complementary Kind of integrated circuit: D flip-flop Technology: ECL Trigger: positive-edge-triggered Operating temperature: -40...85°C |
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| MC100EP451MNG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6 Type of integrated circuit: digital Mounting: SMD Supply voltage: -5.5...-3V Quiescent current: 135mA Number of channels: 6 Number of inputs: 6 Number of outputs: 6 Manufacturer series: 100EP Clock frequency: 3GHz Kind of output: complementary Kind of integrated circuit: D flip-flop Kind of input: differential Technology: ECL Trigger: positive-edge-triggered Operating temperature: -40...85°C |
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| MC100EP451MNR4G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6 Type of integrated circuit: digital Mounting: SMD Supply voltage: -5.5...-3V Quiescent current: 135mA Number of channels: 6 Number of inputs: 6 Number of outputs: 6 Manufacturer series: 100EP Clock frequency: 3GHz Kind of output: complementary Kind of integrated circuit: D flip-flop Technology: ECL Trigger: positive-edge-triggered Operating temperature: -40...85°C |
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| MC78M08BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MC78M08CDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| NCV78M08BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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74LCX16373MTD | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 16 Mounting: SMD Operating temperature: -40...85°C Family: LCX Kind of output: 3-state; non-inverting Trigger: level-triggered Kind of package: tube Case: TSSOP48 Quiescent current: 20µA Supply voltage: 2...3.6V DC Manufacturer series: LCX |
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| 74LCX16373MTDX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 16 Mounting: SMD Operating temperature: -40...85°C Family: LCX Kind of output: 3-state; non-inverting Trigger: level-triggered Kind of package: reel; tape Case: TSSOP48 Quiescent current: 20µA Supply voltage: 2...3.6V DC Manufacturer series: LCX |
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| 74LVT16373MTD | ONSEMI |
Category: Latches Description: IC: digital; latch transparent; Ch: 16; 2.7÷3.6VDC; SMD; TSSOP48 Type of integrated circuit: digital Kind of integrated circuit: latch transparent Number of channels: 16 Mounting: SMD Operating temperature: -40...85°C Family: LVT Kind of output: 3-state Kind of package: tube Case: TSSOP48 Supply voltage: 2.7...3.6V DC |
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| 74LVT16373MTDX | ONSEMI |
Category: Latches Description: IC: digital; 16bit,3-state,latch; Ch: 16; BiCMOS,TTL; 2.7÷3.6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; 16bit; latch Number of channels: 16 Technology: BiCMOS; TTL Mounting: SMD Operating temperature: -40...85°C Family: LVT Kind of output: 3-state Kind of package: reel; tape Case: TSSOP48 Supply voltage: 2.7...3.6V DC Integrated circuit features: 5V tolerant on inputs/outputs Manufacturer series: LVT |
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| 74VCX16373MTD | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 16 Mounting: SMD Operating temperature: -40...85°C Family: LCX Kind of output: 3-state; non-inverting Trigger: level-triggered Kind of package: tube Case: TSSOP48 Quiescent current: 20µA Supply voltage: 1.2...3.6V DC Manufacturer series: VCX |
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| 74VCX16373MTDX | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 16 Mounting: SMD Operating temperature: -40...85°C Family: LCX Kind of output: 3-state; non-inverting Trigger: level-triggered Kind of package: reel; tape Case: TSSOP48 Quiescent current: 20µA Supply voltage: 1.2...3.6V DC Manufacturer series: VCX |
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| M74LCX16373DTR2G | ONSEMI |
Category: Latches Description: IC: digital; D latch; Ch: 16; CMOS,TTL; 2.3÷3.6VDC; SMD; TSSOP48 Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 16 Technology: CMOS; TTL Mounting: SMD Operating temperature: -55...125°C Family: LCX Kind of output: 3-state; non-inverting Trigger: level-triggered Kind of package: reel; tape Case: TSSOP48 Quiescent current: 20µA Supply voltage: 2.3...3.6V DC |
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MC74LCX16373DTG | ONSEMI |
Category: Latches Description: IC: digital; 16bit,3-state,latch transparent; Ch: 16; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; 16bit; latch transparent Number of channels: 16 Technology: CMOS Mounting: SMD Operating temperature: -40...85°C Family: LCX Kind of output: 3-state Kind of package: reel; tape Case: TSSOP48 Supply voltage: 1.5...3.6V DC Integrated circuit features: tolerates a voltage of 5V on the inputs Manufacturer series: LCX |
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GBU4J | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 150A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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| KA5L0565RYDTU | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 3.5A; 650V; 50kHz; Ch: 1; TO220F-4FL; 2.2Ω Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 3.5A Output voltage: 650V Frequency: 50kHz Number of channels: 1 Case: TO220F-4FL Mounting: THT Operating temperature: -25...85°C Topology: flyback; forward On-state resistance: 2.2Ω Duty cycle factor: 72...82% Kind of package: tube Power: 38W Operating voltage: 9...27V DC |
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| NVMFS015N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47.1A Pulsed drain current: 259A Power dissipation: 23.8W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTMFS015N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 54A Pulsed drain current: 423A Power dissipation: 79W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVMFWS015N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47.1A Pulsed drain current: 259A Power dissipation: 23.8W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDN86246 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 6A; 1.5W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT23 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 2.9nC On-state resistance: 261mΩ Power dissipation: 1.5W Drain current: 1.6A Pulsed drain current: 6A Gate-source voltage: ±20V Drain-source voltage: 150V |
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| FDT86246 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 8A; 2.2W; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT223 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 2.9nC On-state resistance: 236mΩ Power dissipation: 2.2W Drain current: 2A Pulsed drain current: 8A Gate-source voltage: ±20V Drain-source voltage: 150V |
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| FDT86246L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 20A; 2.2W; SOT223 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT223 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 4.5nC On-state resistance: 228mΩ Power dissipation: 2.2W Drain current: 2A Pulsed drain current: 20A Gate-source voltage: ±20V Drain-source voltage: 150V |
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FDS86240 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; 5W; SO8 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SO8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar On-state resistance: 35.3mΩ Power dissipation: 5W Drain current: 7.5A Gate-source voltage: ±20V Drain-source voltage: 150V |
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| FDMC86240 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 16A Power dissipation: 40W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 97mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| FDMC86244 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8 Kind of channel: enhancement Type of transistor: N-MOSFET Case: WDFN8 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 5.9nC On-state resistance: 254mΩ Power dissipation: 26W Drain current: 9.4A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 150V |
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| FDMC86248 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33 Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power33 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 9nC On-state resistance: 183mΩ Power dissipation: 36W Drain current: 13A Pulsed drain current: 15A Gate-source voltage: ±20V Drain-source voltage: 150V |
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MMSZ5236BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 2073 шт: термін постачання 14-30 дні (днів) |
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| MUN5236DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 100kΩ Power dissipation: 0.385W Mounting: SMD Kind of package: reel; tape Case: SC70-6; SC88; SOT363 Quantity in set/package: 3000pcs. Kind of transistor: BRT Type of transistor: NPN x2 Collector current: 0.1A Collector-emitter voltage: 50V Current gain: 80...150 Base resistor: 100kΩ Base-emitter resistor: 100kΩ Polarisation: bipolar |
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| MUN5236T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323 Power dissipation: 0.31W Mounting: SMD Kind of package: reel; tape Case: SC70; SOT323 Quantity in set/package: 3000pcs. Kind of transistor: BRT Type of transistor: NPN Collector current: 0.1A Collector-emitter voltage: 50V Current gain: 80...150 Base resistor: 100kΩ Base-emitter resistor: 100kΩ Polarisation: bipolar |
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| SZMMSZ4V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
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MMSZ15T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG |
на замовлення 2030 шт: термін постачання 14-30 дні (днів) |
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| SZMMSZ15T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZxxTxG Application: automotive industry |
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HCPL062N | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 2.5kV; 10Mbps; SO8 Case: SO8 Kind of output: logic Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Slew rate: 25kV/μs Output voltage: 7V Insulation voltage: 2.5kV Transfer rate: 10Mbps |
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| HCPL062NR2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs Case: SO8 Kind of output: logic Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Slew rate: 25kV/μs Insulation voltage: 2.5kV Transfer rate: 10Mbps |
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| FAD8253MX-1 | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC Type of integrated circuit: driver Kind of integrated circuit: IGBT gate driver Case: SO14 Output current: 2.5...3.4A Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 100ns Pulse fall time: 90ns Kind of package: reel; tape |
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74VHC164MTCX | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; shift register Number of channels: 8 Mounting: SMD Case: TSSOP14 Manufacturer series: VHC Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Family: VHC |
на замовлення 2490 шт: термін постачання 14-30 дні (днів) |
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74VHC164MX | ONSEMI |
Category: Shift registers Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD Type of integrated circuit: digital Kind of integrated circuit: parallel out; serial input; shift register Mounting: SMD Case: SO14 Family: VHC Operating temperature: -40...85°C Quiescent current: 40µA Number of channels: 8 Supply voltage: 2...5.5V DC Kind of package: reel; tape Manufacturer series: VHC |
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В кошику од. на суму грн. | ||||||||||||||||
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MJL21193G | ONSEMI |
 Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 200W; TO264 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Case: TO264 Mounting: THT Kind of package: tube Power dissipation: 200W Frequency: 4MHz |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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| MC74HC02ADTR2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 2uA; 95ns Type of integrated circuit: digital Case: TSSOP14 Kind of gate: NOR Kind of output: push-pull Number of channels: 4 Mounting: SMD Operating temperature: -55...125°C Delay time: 95ns Quiescent current: 2µA Number of outputs: 1 Number of inputs: 2 Family: HC Supply voltage: 2...6V Technology: CMOS |
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LF353N | ONSEMI |
Category: THT operational amplifiers Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8; Ch: dual Type of integrated circuit: operational amplifier Bandwidth: 4MHz Number of channels: dual; 2 Mounting: THT Case: DIP8 Operating temperature: 0...70°C Slew rate: 16V/μs |
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В кошику од. на суму грн. | ||||||||||||||||
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CS51414EDR8G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Mounting: SMD Kind of package: reel; tape Application: automotive industry Kind of integrated circuit: DC/DC converter Case: SO8 Type of integrated circuit: PMIC |
на замовлення 2491 шт: термін постачання 14-30 дні (днів) |
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| NTF6P02T3G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 8.3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -10A Power dissipation: 8.3W Case: SOT223 On-state resistance: 70mΩ Mounting: SMD Gate charge: 20nC Kind of channel: enhancement Technology: PowerTrench® |
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В кошику од. на суму грн. | |||||||||||||||||
| NVF6P02T3G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar Type of transistor: P-MOSFET Polarisation: unipolar Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||||
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NTMD6P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 33mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||
| FSUSB242GEVB | ONSEMI |
Category: Microchip development kits Description: FSUSB242GEVB |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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FDMC7660 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 41W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
на замовлення 2103 шт: термін постачання 14-30 дні (днів) |
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| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Kind of interface: serial Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
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В кошику од. на суму грн. | |||||||||||||||||
| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Kind of interface: serial Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Memory organisation: 128kx8bit |
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В кошику од. на суму грн. | |||||||||||||||||
| UJ3D06520KSD | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-3; 20.9W Case: TO247-3 Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Load current: 10A Power dissipation: 20.9W Max. forward impulse current: 60A Max. off-state voltage: 650V Max. forward voltage: 650V |
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В кошику од. на суму грн. | |||||||||||||||||
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BZX84C9V1LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 9.1V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 2285 шт: термін постачання 14-30 дні (днів) |
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BZX79C9V1 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; BZX79C Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
на замовлення 863 шт: термін постачання 14-30 дні (днів) |
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| NSVMMUN2231LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Current gain: 8...15
Quantity in set/package: 3000pcs.
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В кошику
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| NSVMMUN2236LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Application: automotive industry
Base-emitter resistor: 100kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Application: automotive industry
Base-emitter resistor: 100kΩ
Current gain: 80...150
Quantity in set/package: 3000pcs.
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| NSVMMUN2237LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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| FQN1N50CTA |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Gate charge: 6.4nC
Pulsed drain current: 3.04A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: Ammo Pack
Kind of channel: enhancement
Gate charge: 6.4nC
Pulsed drain current: 3.04A
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| NCV33079DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC; SO14; 3.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 5...18V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
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| NCP451AFCT2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Mounting: SMD
Case: WLCSP6
Kind of package: reel; tape
Type of integrated circuit: power switch
Control voltage: 0...5.5V DC
On-state resistance: 35mΩ
Supply voltage: 0.75...5.5V DC
Number of channels: 1
Output current: 3A
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Mounting: SMD
Case: WLCSP6
Kind of package: reel; tape
Type of integrated circuit: power switch
Control voltage: 0...5.5V DC
On-state resistance: 35mΩ
Supply voltage: 0.75...5.5V DC
Number of channels: 1
Output current: 3A
Active logical level: high
Kind of integrated circuit: high-side
Kind of output: N-Channel
на замовлення 5994 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 19+ | 22.97 грн |
| 25+ | 21.21 грн |
| 100+ | 20.88 грн |
| NCP451FCT2G |
|
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Output current: 3A
Kind of output: N-Channel
Kind of integrated circuit: high-side
Active logical level: high
Control voltage: 0...5.5V DC
On-state resistance: 35mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Case: WLCSP6
Mounting: SMD
Supply voltage: 0.75...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Output current: 3A
Kind of output: N-Channel
Kind of integrated circuit: high-side
Active logical level: high
Control voltage: 0...5.5V DC
On-state resistance: 35mΩ
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| MC10EP451FAG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop,register; Ch: 6; IN: 6; ECL; SMD; 125mA; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; register
Number of channels: 6
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 6
Number of outputs: 6
Clock frequency: 3GHz
Kind of output: complementary
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.5...-3V
Quiescent current: 125mA
Category: Flip-Flops
Description: IC: digital; D flip-flop,register; Ch: 6; IN: 6; ECL; SMD; 125mA; 3GHz
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; register
Number of channels: 6
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 6
Number of outputs: 6
Clock frequency: 3GHz
Kind of output: complementary
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Supply voltage: -5.5...-3V
Quiescent current: 125mA
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| MC100EP451FAG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
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| MC100EP451FAR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
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| MC100EP451MNG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: differential
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
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| MC100EP451MNR4G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 6; IN: 6; ECL; 100EP; SMD; 135mA; OUT: 6
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: -5.5...-3V
Quiescent current: 135mA
Number of channels: 6
Number of inputs: 6
Number of outputs: 6
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Technology: ECL
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
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| MC78M08BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M08CDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NCV78M08BDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 0.5A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| 74LCX16373MTD |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: tube
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Category: Latches
Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: tube
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
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| 74LCX16373MTDX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
Category: Latches
Description: IC: digital; D latch; Ch: 16; 2÷3.6VDC; SMD; TSSOP48; LCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2...3.6V DC
Manufacturer series: LCX
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| 74LVT16373MTD |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; latch transparent; Ch: 16; 2.7÷3.6VDC; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LVT
Kind of output: 3-state
Kind of package: tube
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Category: Latches
Description: IC: digital; latch transparent; Ch: 16; 2.7÷3.6VDC; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: latch transparent
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LVT
Kind of output: 3-state
Kind of package: tube
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
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| 74LVT16373MTDX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 16bit,3-state,latch; Ch: 16; BiCMOS,TTL; 2.7÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; latch
Number of channels: 16
Technology: BiCMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
Family: LVT
Kind of output: 3-state
Kind of package: reel; tape
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LVT
Category: Latches
Description: IC: digital; 16bit,3-state,latch; Ch: 16; BiCMOS,TTL; 2.7÷3.6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; latch
Number of channels: 16
Technology: BiCMOS; TTL
Mounting: SMD
Operating temperature: -40...85°C
Family: LVT
Kind of output: 3-state
Kind of package: reel; tape
Case: TSSOP48
Supply voltage: 2.7...3.6V DC
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LVT
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| 74VCX16373MTD |
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: tube
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 1.2...3.6V DC
Manufacturer series: VCX
Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: tube
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 1.2...3.6V DC
Manufacturer series: VCX
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| 74VCX16373MTDX |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 1.2...3.6V DC
Manufacturer series: VCX
Category: Latches
Description: IC: digital; D latch; Ch: 16; 1.2÷3.6VDC; SMD; TSSOP48; VCX; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 1.2...3.6V DC
Manufacturer series: VCX
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| M74LCX16373DTR2G |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 16; CMOS,TTL; 2.3÷3.6VDC; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2.3...3.6V DC
Category: Latches
Description: IC: digital; D latch; Ch: 16; CMOS,TTL; 2.3÷3.6VDC; SMD; TSSOP48
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 16
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
Family: LCX
Kind of output: 3-state; non-inverting
Trigger: level-triggered
Kind of package: reel; tape
Case: TSSOP48
Quiescent current: 20µA
Supply voltage: 2.3...3.6V DC
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| MC74LCX16373DTG |
|
Виробник: ONSEMI
Category: Latches
Description: IC: digital; 16bit,3-state,latch transparent; Ch: 16; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; latch transparent
Number of channels: 16
Technology: CMOS
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Kind of package: reel; tape
Case: TSSOP48
Supply voltage: 1.5...3.6V DC
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
Category: Latches
Description: IC: digital; 16bit,3-state,latch transparent; Ch: 16; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 16bit; latch transparent
Number of channels: 16
Technology: CMOS
Mounting: SMD
Operating temperature: -40...85°C
Family: LCX
Kind of output: 3-state
Kind of package: reel; tape
Case: TSSOP48
Supply voltage: 1.5...3.6V DC
Integrated circuit features: tolerates a voltage of 5V on the inputs
Manufacturer series: LCX
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| GBU4J |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
на замовлення 800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 143.01 грн |
| 5+ | 106.07 грн |
| 10+ | 91.87 грн |
| 20+ | 78.51 грн |
| 100+ | 70.15 грн |
| KA5L0565RYDTU |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 50kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 38W
Operating voltage: 9...27V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 3.5A; 650V; 50kHz; Ch: 1; TO220F-4FL; 2.2Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 3.5A
Output voltage: 650V
Frequency: 50kHz
Number of channels: 1
Case: TO220F-4FL
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 2.2Ω
Duty cycle factor: 72...82%
Kind of package: tube
Power: 38W
Operating voltage: 9...27V DC
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| NVMFS015N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS015N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 54A; Idm: 423A; 79W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 54A
Pulsed drain current: 423A
Power dissipation: 79W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWS015N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDN86246 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 6A; 1.5W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 261mΩ
Power dissipation: 1.5W
Drain current: 1.6A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 6A; 1.5W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 261mΩ
Power dissipation: 1.5W
Drain current: 1.6A
Pulsed drain current: 6A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| FDT86246 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 8A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 236mΩ
Power dissipation: 2.2W
Drain current: 2A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 8A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 2.9nC
On-state resistance: 236mΩ
Power dissipation: 2.2W
Drain current: 2A
Pulsed drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| FDT86246L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 20A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 228mΩ
Power dissipation: 2.2W
Drain current: 2A
Pulsed drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2A; Idm: 20A; 2.2W; SOT223
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT223
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 228mΩ
Power dissipation: 2.2W
Drain current: 2A
Pulsed drain current: 20A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| FDS86240 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; 5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 35.3mΩ
Power dissipation: 5W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.5A; 5W; SO8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SO8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
On-state resistance: 35.3mΩ
Power dissipation: 5W
Drain current: 7.5A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| FDMC86240 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 40W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 16A
Power dissipation: 40W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMC86244 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 9.4A; Idm: 12A; 26W; WDFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: WDFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 5.9nC
On-state resistance: 254mΩ
Power dissipation: 26W
Drain current: 9.4A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| FDMC86248 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Drain current: 13A
Pulsed drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 13A; Idm: 15A; 36W; Power33
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power33
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 9nC
On-state resistance: 183mΩ
Power dissipation: 36W
Drain current: 13A
Pulsed drain current: 15A
Gate-source voltage: ±20V
Drain-source voltage: 150V
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| MMSZ5236BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 2073 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 99+ | 4.26 грн |
| 160+ | 2.62 грн |
| 198+ | 2.11 грн |
| 239+ | 1.75 грн |
| 252+ | 1.66 грн |
| 500+ | 1.46 грн |
| MUN5236DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 100kΩ
Power dissipation: 0.385W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Type of transistor: NPN x2
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 100kΩ
Power dissipation: 0.385W
Mounting: SMD
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Type of transistor: NPN x2
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
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| MUN5236T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Power dissipation: 0.31W
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 310mW; SC70,SOT323
Power dissipation: 0.31W
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Quantity in set/package: 3000pcs.
Kind of transistor: BRT
Type of transistor: NPN
Collector current: 0.1A
Collector-emitter voltage: 50V
Current gain: 80...150
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Polarisation: bipolar
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| SZMMSZ4V7T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| MMSZ15T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
на замовлення 2030 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 60+ | 7.02 грн |
| 70+ | 6.01 грн |
| 104+ | 4.04 грн |
| 124+ | 3.39 грн |
| 500+ | 2.27 грн |
| 1000+ | 1.92 грн |
| 1500+ | 1.75 грн |
| SZMMSZ15T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZxxTxG
Application: automotive industry
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| HCPL062N |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 2.5kV; 10Mbps; SO8
Case: SO8
Kind of output: logic
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Slew rate: 25kV/μs
Output voltage: 7V
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; Uinsul: 2.5kV; 10Mbps; SO8
Case: SO8
Kind of output: logic
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Slew rate: 25kV/μs
Output voltage: 7V
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
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| HCPL062NR2 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Case: SO8
Kind of output: logic
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Slew rate: 25kV/μs
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 2; OUT: logic; 2.5kV; 10Mbps; SO8; 25kV/μs
Case: SO8
Kind of output: logic
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Slew rate: 25kV/μs
Insulation voltage: 2.5kV
Transfer rate: 10Mbps
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| FAD8253MX-1 |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO14
Output current: 2.5...3.4A
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 90ns
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: driver; IGBT gate driver; SO14; 2.5÷3.4A; 4.5÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: IGBT gate driver
Case: SO14
Output current: 2.5...3.4A
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 100ns
Pulse fall time: 90ns
Kind of package: reel; tape
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| 74VHC164MTCX |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
Category: Shift registers
Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; shift register
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Manufacturer series: VHC
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Family: VHC
на замовлення 2490 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.38 грн |
| 19+ | 23.13 грн |
| 25+ | 22.22 грн |
| 74VHC164MX |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; shift register
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
Category: Shift registers
Description: IC: digital; shift register,serial input,parallel out; Ch: 8; SMD
Type of integrated circuit: digital
Kind of integrated circuit: parallel out; serial input; shift register
Mounting: SMD
Case: SO14
Family: VHC
Operating temperature: -40...85°C
Quiescent current: 40µA
Number of channels: 8
Supply voltage: 2...5.5V DC
Kind of package: reel; tape
Manufacturer series: VHC
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| MJL21193G | |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Case: TO264
Mounting: THT
Kind of package: tube
Power dissipation: 200W
Frequency: 4MHz
на замовлення 127 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 390.35 грн |
| 3+ | 329.06 грн |
| 10+ | 258.90 грн |
| 25+ | 229.67 грн |
| MC74HC02ADTR2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 2uA; 95ns
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NOR
Kind of output: push-pull
Number of channels: 4
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 95ns
Quiescent current: 2µA
Number of outputs: 1
Number of inputs: 2
Family: HC
Supply voltage: 2...6V
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; -55÷125°C; 2uA; 95ns
Type of integrated circuit: digital
Case: TSSOP14
Kind of gate: NOR
Kind of output: push-pull
Number of channels: 4
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 95ns
Quiescent current: 2µA
Number of outputs: 1
Number of inputs: 2
Family: HC
Supply voltage: 2...6V
Technology: CMOS
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| LF353N |
|
Виробник: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8; Ch: dual
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: dual; 2
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 16V/μs
Category: THT operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; DIP8; Ch: dual
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Number of channels: dual; 2
Mounting: THT
Case: DIP8
Operating temperature: 0...70°C
Slew rate: 16V/μs
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| CS51414EDR8G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Kind of integrated circuit: DC/DC converter
Case: SO8
Type of integrated circuit: PMIC
на замовлення 2491 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 141.21 грн |
| 10+ | 96.05 грн |
| 25+ | 91.87 грн |
| NTF6P02T3G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 8.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 8.3W
Case: SOT223
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -10A; 8.3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -10A
Power dissipation: 8.3W
Case: SOT223
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Technology: PowerTrench®
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| NVF6P02T3G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar
Type of transistor: P-MOSFET
Polarisation: unipolar
Mounting: SMD
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| NTMD6P02R2G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.7A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.7A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 33mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FSUSB242GEVB |
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 9891.81 грн |
| FDMC7660 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 41W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 41W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2103 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.15 грн |
| N01S830BAT22IT |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Kind of interface: serial
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Kind of interface: serial
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
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| N01S830BAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Kind of interface: serial
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Kind of interface: serial
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
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| UJ3D06520KSD |
|
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-3; 20.9W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 10A
Power dissipation: 20.9W
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Max. forward voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO247-3; 20.9W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Load current: 10A
Power dissipation: 20.9W
Max. forward impulse current: 60A
Max. off-state voltage: 650V
Max. forward voltage: 650V
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| BZX84C9V1LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 9.1V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 2285 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 93+ | 4.51 грн |
| 107+ | 3.93 грн |
| 160+ | 2.62 грн |
| 190+ | 2.20 грн |
| 500+ | 1.49 грн |
| 1000+ | 1.27 грн |
| BZX79C9V1 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; bulk; CASE017AG; single diode; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
на замовлення 863 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.40 грн |
| 120+ | 3.51 грн |
| 148+ | 2.84 грн |
| 265+ | 1.58 грн |
| 329+ | 1.27 грн |
| 500+ | 1.09 грн |