| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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QRD1114 | ONSEMI |
  Category: PCB Photoelectric SensorsDescription: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB Type of sensor: photoelectric Operation mode: diffuse-reflective Output configuration: NPN Supply voltage: 5V DC Mounting: PCB Body dimensions: 4.39x6.1x4.65mm Operating temperature: -40...85°C |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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FDA59N30 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 35A Pulsed drain current: 236A Power dissipation: 500W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 56mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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| RHRG3060-F085 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 90A Case: TO247-2 Reverse recovery time: 45ns Application: automotive industry |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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| BAV99 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 8A Power dissipation: 0.35W Kind of package: reel; tape |
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MM74HCT05MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
на замовлення 1705 шт: термін постачання 21-30 дні (днів) |
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MM74HCT05MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Delay time: 10ns Kind of output: open drain Family: HCT |
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В кошику од. на суму грн. | ||||||||||||||
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RFD16N06LESM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 90W Case: DPAK Gate-source voltage: ±8V On-state resistance: 47mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 72W Case: DPAK Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
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| BSS138 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
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FQP8N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.1A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 45nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBD1504A | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Type of diode: switching Capacitance: 4pF Load current: 0.2A Power dissipation: 0.35W Max. forward impulse current: 2A Max. forward voltage: 1.15V Max. off-state voltage: 200V Case: SOT23 Kind of package: reel; tape Semiconductor structure: common cathode; double |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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FDP047AN08A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 80A Power dissipation: 310W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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6N137M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: gate Transfer rate: 1Mbps Case: DIP8 Turn-on time: 75ns Turn-off time: 75ns CTR@If: 19-50%@16mA Slew rate: 2.5kV/μs |
товару немає в наявності |
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| CAV24C32WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 32kb EEPROM Interface: I2C Memory organisation: 4kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
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FDA032N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 70V Drain current: 120A Case: TO3PN Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 0.22µC Technology: PowerTrench® Pulsed drain current: 940A Power dissipation: 37.5W On-state resistance: 3.2mΩ |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
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| N64S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830BAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830BAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N01S830HAT22IT | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.5...5.5V Memory: 1Mb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N25S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N25S830HAT22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 256kb SRAM Type of integrated circuit: SRAM memory Case: TSSOP8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| N64S830HAS22I | ONSEMI |
Category: Serial SRAM memories - integrated circ. Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 64kb SRAM Type of integrated circuit: SRAM memory Case: SOIC8 Kind of interface: serial Kind of memory: SRAM Memory organisation: 8kx8bit |
товару немає в наявності |
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| NXV08A170DB2 | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V Drain-source voltage: 80V Drain current: 200A Case: APM12-CBA Gate-source voltage: ±20V On-state resistance: 2.4mΩ Kind of package: in-tray Electrical mounting: THT Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Semiconductor structure: transistor/transistor Topology: MOSFET half-bridge |
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NCP1034DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 2A Frequency: 170...430kHz Mounting: SMD Case: SO16 Topology: buck Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 10...18V DC |
товару немає в наявності |
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MID400 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V Turn-on time: 1µs Mounting: THT Type of optocoupler: optocoupler Number of channels: 1 Output voltage: 7V Kind of output: logic Insulation voltage: 2.5kV Turn-off time: 1µs Case: DIP8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2SC5242OTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 17A Power dissipation: 130W Case: TO3P Mounting: THT Frequency: 30MHz Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||
| NCP1562ADBR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward Type of integrated circuit: PMIC Case: TSSOP16 Mounting: SMD Operating temperature: -40...125°C Frequency: 222kHz...1MHz Output voltage: 20V Input voltage: 100V Output current: 1...2.5A Topology: forward |
товару немає в наявності |
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| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 441W Pulsed collector current: 378A Collector-emitter voltage: 650V Gate charge: 162nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 357W Pulsed collector current: 360A Collector-emitter voltage: 650V Gate charge: 125nC Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TIP29AG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 84 шт: термін постачання 21-30 дні (днів) |
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TIP29CG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 38 шт: термін постачання 21-30 дні (днів) |
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TIP29BG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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| NCV3063DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCV3063MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DFN8 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NLAS2750MUTAG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA Type of integrated circuit: analog switch Kind of package: reel; tape Mounting: SMD Kind of output: SPDT x2 Case: UQFN10 Operating temperature: -40...85°C Quiescent current: 250nA Supply voltage: 1.8...5.5V DC Number of channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SBE805-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 30µA Load current: 0.5A Max. forward voltage: 0.55V Max. forward impulse current: 5A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky switching Mounting: SMD Case: SOT25 Capacitance: 16pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBE807-TL-W | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape Reverse recovery time: 10ns Leakage current: 15µA Load current: 1A Max. forward voltage: 0.53V Max. forward impulse current: 10A Max. off-state voltage: 30V Semiconductor structure: double independent Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: SOT25 Capacitance: 27pF |
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BZX85C5V1 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.1V Mounting: THT Semiconductor structure: single diode Manufacturer series: BZX85C Tolerance: ±5% Kind of package: bulk Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBAS16LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 30µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 1719 шт: термін постачання 21-30 дні (днів) |
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| FXMA108BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting Number of channels: 8 Supply voltage: 1.65...5.5V DC Mounting: SMD Case: DQFN20 Operating temperature: -40...85°C Kind of package: reel; tape Number of inputs: 8 Number of outputs: 8 Integrated circuit features: auto-direction sensing Frequency: 100MHz |
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SMUN5230DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 1kΩ Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SC70-6; SC88; SOT363 Type of transistor: NPN x2 |
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| S310 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape Max. forward voltage: 0.9V Load current: 3A Max. forward impulse current: 80A Max. off-state voltage: 100V Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NVF3055L108T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
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NTF3055-100T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10.6nC |
на замовлення 1365 шт: термін постачання 21-30 дні (днів) |
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| MJF3055G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP Type of transistor: NPN Polarisation: bipolar Power dissipation: 30W Case: TO220FP Mounting: THT Kind of package: tube Frequency: 2MHz Collector current: 10A Current gain: 20...100 Collector-emitter voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NCP4305DDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NCP4305DMNTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: DFN8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
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| NCP4305DMTTWG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC Output current: 4...8A Case: WDFN8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback; forward; resonant LLC Number of channels: 1 Operating voltage: 7.8...37V DC Frequency: 1MHz Type of integrated circuit: PMIC |
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| 2SC4027T-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 1W Case: DPAK Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz |
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| NCV8705ML33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD Application: automotive industry Case: DFNW8 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 3.3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear |
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| NCV8705MT33TCG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD Application: automotive industry Case: WDFN6 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 3.3V Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear |
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| NCV8705MWADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A Application: automotive industry Case: DFN8 Mounting: SMD Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Output voltage: 0.8...5.15V Number of channels: 1 Kind of voltage regulator: adjustable; LDO; linear |
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| NVTYS010N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33 Mounting: SMD Case: LFPAK33 On-state resistance: 9.8mΩ Gate-source voltage: ±20V Power dissipation: 23W Drain-source voltage: 60V Pulsed drain current: 217A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 13nC Drain current: 51A |
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| GF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 2µs Semiconductor structure: single diode Case: SMA Max. forward voltage: 1V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
 |
RGF1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Capacitance: 8.5pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Power dissipation: 1.76W Kind of package: reel; tape |
на замовлення 2726 шт: термін постачання 21-30 дні (днів) |
|
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| FDD5680 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 8.5A Pulsed drain current: 100A Power dissipation: 60W Case: DPAK Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
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| NSVDTA114EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 35...60 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 10kΩ Application: automotive industry Base-emitter resistor: 10kΩ |
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| RS1B | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| RS1BFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
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В кошику од. на суму грн. |
| QRD1114 | |
|
Виробник: ONSEMI
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
Category: PCB Photoelectric Sensors
Description: Sensor: photoelectric; diffuse-reflective; NPN; Usup: 5VDC; PCB
Type of sensor: photoelectric
Operation mode: diffuse-reflective
Output configuration: NPN
Supply voltage: 5V DC
Mounting: PCB
Body dimensions: 4.39x6.1x4.65mm
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 93.17 грн |
| 10+ | 92.33 грн |
| FDA59N30 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 35A; Idm: 236A; 500W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 500W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 132 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 339.52 грн |
| 5+ | 273.68 грн |
| 10+ | 237.08 грн |
| 30+ | 182.17 грн |
| RHRG3060-F085 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 90A; TO247-2; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-2
Reverse recovery time: 45ns
Application: automotive industry
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 178.85 грн |
| 10+ | 158.05 грн |
| 30+ | 147.24 грн |
| BAV99 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
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| MM74HCT05MTCX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; TSSOP14; 4.5÷5.5VDC; 10ns
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
на замовлення 1705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.54 грн |
| 12+ | 35.44 грн |
| 25+ | 31.69 грн |
| 100+ | 26.54 грн |
| 250+ | 23.96 грн |
| 500+ | 21.13 грн |
| 1000+ | 19.05 грн |
| MM74HCT05MX |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Delay time: 10ns
Kind of output: open drain
Family: HCT
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| RFD16N06LESM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±8V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 83.18 грн |
| RFD16N05SM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BSS138 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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| FQP8N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.1A; Idm: 32A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5.1A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 45nC
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| MMBD1504A |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Capacitance: 4pF
Load current: 0.2A
Power dissipation: 0.35W
Max. forward impulse current: 2A
Max. forward voltage: 1.15V
Max. off-state voltage: 200V
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: common cathode; double
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.54 грн |
| 52+ | 8.07 грн |
| 100+ | 5.88 грн |
| 250+ | 5.16 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.15 грн |
| FDP047AN08A0 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 310W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 310W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 259.79 грн |
| 10+ | 183.01 грн |
| 50+ | 149.73 грн |
| 6N137M |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: gate; CTR@If: 19-50%@16mA; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: gate
Transfer rate: 1Mbps
Case: DIP8
Turn-on time: 75ns
Turn-off time: 75ns
CTR@If: 19-50%@16mA
Slew rate: 2.5kV/μs
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| CAV24C32WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; I2C; 4kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 32kb EEPROM
Interface: I2C
Memory organisation: 4kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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од. на суму грн.
| FDA032N08 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 120A; Idm: 940A; 37.5W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 120A
Case: TO3PN
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 0.22µC
Technology: PowerTrench®
Pulsed drain current: 940A
Power dissipation: 37.5W
On-state resistance: 3.2mΩ
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 321.60 грн |
| 10+ | 247.06 грн |
| 30+ | 210.46 грн |
| N64S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| N01S830BAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830BAT22IT |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N01S830HAT22IT |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷5.5V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.5...5.5V
Memory: 1Mb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 128kx8bit
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| N25S830HAS22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N25S830HAT22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 2.7÷3.6V; TSSOP8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 256kb SRAM
Type of integrated circuit: SRAM memory
Case: TSSOP8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 32kx8bit
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| N64S830HAS22I |
|
Виробник: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 2.7÷3.6V; SOIC8; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 64kb SRAM
Type of integrated circuit: SRAM memory
Case: SOIC8
Kind of interface: serial
Kind of memory: SRAM
Memory organisation: 8kx8bit
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| NXV08A170DB2 |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 80V; 200A; APM12-CBA; THT; Ugs: ±20V
Drain-source voltage: 80V
Drain current: 200A
Case: APM12-CBA
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Kind of package: in-tray
Electrical mounting: THT
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
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| NCP1034DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 2A
Frequency: 170...430kHz
Mounting: SMD
Case: SO16
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 10...18V DC
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| MID400 |
|
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 2.5kV; DIP8; Uout: 7V
Turn-on time: 1µs
Mounting: THT
Type of optocoupler: optocoupler
Number of channels: 1
Output voltage: 7V
Kind of output: logic
Insulation voltage: 2.5kV
Turn-off time: 1µs
Case: DIP8
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| 2SC5242OTU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 130W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 130W
Case: TO3P
Mounting: THT
Frequency: 30MHz
Kind of package: tube
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| NCP1562ADBR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Topology: forward
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| FGY120T65SPD-F085 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 441W
Pulsed collector current: 378A
Collector-emitter voltage: 650V
Gate charge: 162nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| AFGY120T65SPD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 357W
Pulsed collector current: 360A
Collector-emitter voltage: 650V
Gate charge: 125nC
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 120A
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| TIP29AG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 84 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 111.08 грн |
| 10+ | 66.13 грн |
| 50+ | 49.74 грн |
| TIP29CG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 38 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.83 грн |
| 10+ | 54.74 грн |
| TIP29BG |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 88.69 грн |
| 10+ | 58.40 грн |
| NCV3063DR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NCV3063MNTXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DFN8; SMD; reel,tape; automotive industry
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DFN8
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NLAS2750MUTAG |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UQFN10; 1.8÷5.5VDC; reel,tape; 250nA
Type of integrated circuit: analog switch
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Case: UQFN10
Operating temperature: -40...85°C
Quiescent current: 250nA
Supply voltage: 1.8...5.5V DC
Number of channels: 2
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| SBE805-TL-W |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT25; SMD; 30V; 0.5A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 30µA
Load current: 0.5A
Max. forward voltage: 0.55V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky switching
Mounting: SMD
Case: SOT25
Capacitance: 16pF
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| SBE807-TL-W |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT25; SMD; 30V; 1A; 10ns; reel,tape
Reverse recovery time: 10ns
Leakage current: 15µA
Load current: 1A
Max. forward voltage: 0.53V
Max. forward impulse current: 10A
Max. off-state voltage: 30V
Semiconductor structure: double independent
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT25
Capacitance: 27pF
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| BZX85C5V1 |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.1V; bulk; DO41; single diode; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.1V
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: BZX85C
Tolerance: ±5%
Kind of package: bulk
Case: DO41
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| SBAS16LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 1719 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.17 грн |
| 76+ | 5.49 грн |
| 85+ | 4.91 грн |
| 129+ | 3.23 грн |
| FXMA108BQX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
Category: Level translators
Description: IC: digital; Ch: 8; 1.65÷5.5VDC; SMD; DQFN20; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Number of channels: 8
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: DQFN20
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of inputs: 8
Number of outputs: 8
Integrated circuit features: auto-direction sensing
Frequency: 100MHz
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| SMUN5230DW1T1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 1kΩ; R2: 1kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: NPN x2
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| S310 |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Max. forward voltage: 0.9V
Load current: 3A
Max. forward impulse current: 80A
Max. off-state voltage: 100V
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMB
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| NVF3055L108T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.4A
Power dissipation: 1.3W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| NTF3055-100T1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.6nC
на замовлення 1365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.25 грн |
| 10+ | 47.17 грн |
| 50+ | 38.93 грн |
| 100+ | 35.60 грн |
| 200+ | 32.11 грн |
| 500+ | 27.70 грн |
| 1000+ | 24.29 грн |
| MJF3055G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 90V; 10A; 30W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 30W
Case: TO220FP
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Collector current: 10A
Current gain: 20...100
Collector-emitter voltage: 90V
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| NCP4305DDR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| NCP4305DMNTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: DFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| NCP4305DMTTWG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward,resonant LLC; 7.8÷37VDC
Output current: 4...8A
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback; forward; resonant LLC
Number of channels: 1
Operating voltage: 7.8...37V DC
Frequency: 1MHz
Type of integrated circuit: PMIC
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| 2SC4027T-TL-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
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| NCV8705ML33TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; DFNW8; SMD
Application: automotive industry
Case: DFNW8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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| NCV8705MT33TCG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; WDFN6; SMD
Application: automotive industry
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 3.3V
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
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| NCV8705MWADJTCG |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.15V; 0.5A
Application: automotive industry
Case: DFN8
Mounting: SMD
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Output voltage: 0.8...5.15V
Number of channels: 1
Kind of voltage regulator: adjustable; LDO; linear
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| NVTYS010N06CLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 217A; 23W; LFPAK33
Mounting: SMD
Case: LFPAK33
On-state resistance: 9.8mΩ
Gate-source voltage: ±20V
Power dissipation: 23W
Drain-source voltage: 60V
Pulsed drain current: 217A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 13nC
Drain current: 51A
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| GF1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 2us; SMA; Ufmax: 1V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 2µs
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1V
Kind of package: reel; tape
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| RGF1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Capacitance: 8.5pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Power dissipation: 1.76W
Kind of package: reel; tape
на замовлення 2726 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.40 грн |
| 25+ | 17.22 грн |
| 100+ | 13.73 грн |
| 500+ | 12.14 грн |
| FDD5680 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.5A; Idm: 100A; 60W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.5A
Pulsed drain current: 100A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NSVDTA114EET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 35...60
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
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| RS1B |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1BFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.8A; 150ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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