| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| CAV25512YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz Operating temperature: -40...125°C Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD Kind of package: reel; tape Kind of interface: serial Case: TSSOP8 Access time: 40ns Operating voltage: 2.5...5.5V Memory: 512kb EEPROM Clock frequency: 10MHz Interface: SPI Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTB011N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W Mounting: SMD On-state resistance: 10.9mΩ Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 75.4A Power dissipation: 136.4W Pulsed drain current: 323A Case: D2PAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 37nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVVR26A120M1WST | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT Case: AHPM5-CDA Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVVR26A120M1WSB | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT Case: AHPM5-CDE Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVVR26A120M1WSS | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT Case: AHPM5-CDI Topology: MOSFET half-bridge Kind of package: tube Type of semiconductor module: MOSFET transistor Electrical mounting: screw; THT Technology: SiC Semiconductor structure: transistor/transistor Gate-source voltage: -10...25V On-state resistance: 4.6mΩ Drain current: 400A Power dissipation: 1kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP600SN330T1G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD Mounting: SMD Case: TSOP5 Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.125V Output current: 0.15A Number of channels: 1 Output voltage: 3.3V Tolerance: ±1.5% Input voltage: 1.75...6V Operating temperature: -40...125°C Type of integrated circuit: voltage regulator Manufacturer series: NCP600 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP600SNADJT1G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA Mounting: SMD Case: TSOP5 Kind of voltage regulator: adjustable; LDO; linear Output current: 0.15A Number of channels: 1 Output voltage: 1.25...5V Tolerance: ±1.5% Input voltage: 1.75...6V Operating temperature: -40...125°C Type of integrated circuit: voltage regulator Manufacturer series: NCP600 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5365BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 36V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 523 шт: термін постачання 21-30 дні (днів) |
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| 1N5365BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 36V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5342BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 6.8V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 10µA |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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1N5346BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 9.1V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 7.5µA |
на замовлення 5982 шт: термін постачання 21-30 дні (днів) |
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1N5353BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 16V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 1466 шт: термін постачання 21-30 дні (днів) |
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| 1N5381BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 130V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFS5H431NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 106A Pulsed drain current: 600A Power dissipation: 26W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJE15030 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJE15031G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 8A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 70MHz |
на замовлення 403 шт: термін постачання 21-30 дні (днів) |
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MJD44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry |
на замовлення 2379 шт: термін постачання 21-30 дні (днів) |
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MJD44H11G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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MJD44H11RLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz |
на замовлення 1668 шт: термін постачання 21-30 дні (днів) |
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NJVMJD44H11RLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Application: automotive industry |
на замовлення 1549 шт: термін постачання 21-30 дні (днів) |
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MJD44H11-1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NJVMJD44H11G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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D44H11G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube Frequency: 40MHz |
на замовлення 265 шт: термін постачання 21-30 дні (днів) |
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MJF44H11G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Current gain: 60 Mounting: THT Kind of package: tube Frequency: 50MHz |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| KSE44H11 | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: bulk Frequency: 50MHz Pulsed collector current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 90MHz |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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MJD45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 90MHz |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
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MJF45H11G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP Mounting: THT Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: TO220FP Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W Frequency: 40MHz |
на замовлення 104 шт: термін постачання 21-30 дні (днів) |
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| D45H11G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB Mounting: THT Collector current: 10A Kind of package: tube Current gain: 40 Type of transistor: PNP Case: TO220AB Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJD45H11RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MJD45H11-1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 90MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NJVMJB45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Mounting: SMD Collector current: 10A Kind of package: reel; tape Current gain: 60 Type of transistor: PNP Case: D2PAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 50W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD45H11G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD45H11RLG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD45H11T4G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 80V Pulsed drain current: 916A Drain current: 162A Gate charge: 178nC On-state resistance: 2.4mΩ Power dissipation: 246W Gate-source voltage: ±20V Case: D2PAK Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMA1024NZ | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 6A Drain current: 5A Gate charge: 7.3nC On-state resistance: 75mΩ Power dissipation: 1.4W Gate-source voltage: ±8V Case: WDFN6 Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDME1024NZT | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Technology: PowerTrench® Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.8A Gate charge: 4.2nC On-state resistance: 0.16Ω Power dissipation: 1.4W Gate-source voltage: ±8V Case: MicroFET Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFD024N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 85A Power dissipation: 14W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS024N06CT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS024N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFS4C024NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5 Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 174A Drain current: 21.7A Gate charge: 14nC On-state resistance: 2.8mΩ Power dissipation: 2.57W Gate-source voltage: ±20V Case: DFN5 Kind of channel: enhancement Mounting: SMD |
товару немає в наявності |
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|
NTS4001NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.2A On-state resistance: 1.5Ω Power dissipation: 0.33W Gate-source voltage: ±20V Case: SC70; SOT323 Kind of channel: enhancement Type of transistor: N-MOSFET |
на замовлення 2789 шт: термін постачання 21-30 дні (днів) |
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -5A Drain current: -800mA Gate charge: 10.1nC On-state resistance: 0.15Ω Power dissipation: 0.29W Gate-source voltage: ±12V Case: SC70; SOT323 Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 1978 шт: термін постачання 21-30 дні (днів) |
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NTS4409NT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.75A Gate charge: 1.2nC On-state resistance: 0.4Ω Power dissipation: 0.28W Gate-source voltage: ±8V Case: SC70; SOT323 Kind of channel: enhancement Type of transistor: N-MOSFET |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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NCP1216AD100R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 86...120kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NCP1216AD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 57...75kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
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В кошику од. на суму грн. | ||||||||||||||||
|
NCP1216D65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 57...75kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Operating voltage: 10...12.2V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NCP1217D100R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 90...110kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...125°C Topology: flyback Operating voltage: 7.6...16V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
NCP1217D133R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.5A Frequency: 120...146kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: 0...125°C Topology: flyback Operating voltage: 7.6...16V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCP1219AD100R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 85÷107kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -500...800mA Frequency: 85...107kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Kind of package: reel; tape Application: SMPS Operating voltage: 9.4...20V DC |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP1219AD65R2G | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -500...800mA Frequency: 55...71kHz Number of channels: 1 Case: SO7 Mounting: SMD Operating temperature: -40...125°C Topology: flyback Kind of package: reel; tape Application: SMPS Operating voltage: 7.6...16V DC |
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В кошику од. на суму грн. |
| CAV25512YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 2.5÷5.5V; 10MHz
Operating temperature: -40...125°C
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Access time: 40ns
Operating voltage: 2.5...5.5V
Memory: 512kb EEPROM
Clock frequency: 10MHz
Interface: SPI
Memory organisation: 64kx8bit
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| NTB011N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 75.4A; Idm: 323A; 136.4W
Mounting: SMD
On-state resistance: 10.9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 75.4A
Power dissipation: 136.4W
Pulsed drain current: 323A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 37nC
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| NVVR26A120M1WST |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDA; screw,THT
Case: AHPM5-CDA
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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| NVVR26A120M1WSB |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDE; screw,THT
Case: AHPM5-CDE
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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В кошику
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| NVVR26A120M1WSS |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; AHPM5-CDI; screw,THT
Case: AHPM5-CDI
Topology: MOSFET half-bridge
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw; THT
Technology: SiC
Semiconductor structure: transistor/transistor
Gate-source voltage: -10...25V
On-state resistance: 4.6mΩ
Drain current: 400A
Power dissipation: 1kW
Drain-source voltage: 1.2kV
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| NCP600SN330T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; TSOP5; SMD
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.125V
Output current: 0.15A
Number of channels: 1
Output voltage: 3.3V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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| NCP600SNADJT1G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 150mA
Mounting: SMD
Case: TSOP5
Kind of voltage regulator: adjustable; LDO; linear
Output current: 0.15A
Number of channels: 1
Output voltage: 1.25...5V
Tolerance: ±1.5%
Input voltage: 1.75...6V
Operating temperature: -40...125°C
Type of integrated circuit: voltage regulator
Manufacturer series: NCP600
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| 1N5365BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 523 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.41 грн |
| 25+ | 17.14 грн |
| 26+ | 15.99 грн |
| 100+ | 12.28 грн |
| 250+ | 11.45 грн |
| 1N5365BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 36V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 36V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| 1N5342BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 6.8V; bulk; CASE017AA; single diode; 10uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 10µA
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.08 грн |
| 32+ | 13.10 грн |
| 1N5346BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 9.1V; reel,tape; CASE017AA; single diode; 7.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 7.5µA
на замовлення 5982 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 18+ | 23.24 грн |
| 20+ | 20.76 грн |
| 100+ | 13.51 грн |
| 1N5353BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 16V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 16V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1466 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.07 грн |
| 24+ | 17.47 грн |
| 50+ | 14.25 грн |
| 100+ | 13.10 грн |
| 250+ | 11.87 грн |
| 1N5381BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 130V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 130V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Kind of package: reel; tape
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| NTMFS5H431NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 106A; Idm: 600A; 26W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 106A
Pulsed drain current: 600A
Power dissipation: 26W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MJE15030 |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| MJE15031G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 150V; 8A; 50W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 8A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 70MHz
на замовлення 403 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 123.34 грн |
| 10+ | 67.57 грн |
| 50+ | 66.74 грн |
| MJD44H11T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.10 грн |
| 10+ | 44.33 грн |
| 20+ | 38.15 грн |
| 50+ | 31.31 грн |
| 100+ | 27.19 грн |
| 500+ | 20.27 грн |
| 1000+ | 19.61 грн |
| MJD44H11G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.51 грн |
| 10+ | 41.78 грн |
| MJD44H11RLG |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
на замовлення 1668 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.51 грн |
| 10+ | 60.73 грн |
| 25+ | 49.60 грн |
| 50+ | 42.43 грн |
| 100+ | 42.27 грн |
| NJVMJD44H11RLG |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Application: automotive industry
на замовлення 1549 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 66.55 грн |
| 10+ | 46.22 грн |
| 100+ | 31.39 грн |
| 500+ | 28.84 грн |
| MJD44H11-1G | ![]() |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
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В кошику
од. на суму грн.
| NJVMJD44H11G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Application: automotive industry
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В кошику
од. на суму грн.
| NJVMJD44H11T4G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
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В кошику
од. на суму грн.
| D44H11G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
на замовлення 265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.74 грн |
| 10+ | 51.99 грн |
| 50+ | 37.82 грн |
| 100+ | 37.16 грн |
| MJF44H11G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
на замовлення 13 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 167.71 грн |
| 10+ | 90.64 грн |
| MJB44H11T4G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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В кошику
од. на суму грн.
| MJB44H11G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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од. на суму грн.
| KSE44H11 |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Pulsed collector current: 20A
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од. на суму грн.
| NJW44H11G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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В кошику
од. на суму грн.
| NJVMJB44H11T4G |
![]() |
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MJD45H11T4G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 90MHz
на замовлення 330 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 70.99 грн |
| 10+ | 45.65 грн |
| 50+ | 33.45 грн |
| 100+ | 29.09 грн |
| MJD45H11G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.85 грн |
| 10+ | 67.57 грн |
| 25+ | 51.09 грн |
| MJF45H11G |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220FP
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: TO220FP
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
на замовлення 104 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.59 грн |
| 10+ | 80.75 грн |
| 50+ | 78.28 грн |
| D45H11G |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; TO220AB
Mounting: THT
Collector current: 10A
Kind of package: tube
Current gain: 40
Type of transistor: PNP
Case: TO220AB
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Frequency: 40MHz
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В кошику
од. на суму грн.
| MJD45H11RLG |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MJB45H11G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: tube
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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В кошику
од. на суму грн.
| MJB45H11T4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Power dissipation: 50W
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В кошику
од. на суму грн.
| MJD45H11-1G | ![]() |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 90MHz
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В кошику
од. на суму грн.
| NJVMJB45H11T4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Mounting: SMD
Collector current: 10A
Kind of package: reel; tape
Current gain: 60
Type of transistor: PNP
Case: D2PAK
Collector-emitter voltage: 80V
Polarisation: bipolar
Application: automotive industry
Power dissipation: 50W
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В кошику
од. на суму грн.
| NJVMJD45H11G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Application: automotive industry
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В кошику
од. на суму грн.
| NJVMJD45H11RLG |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| NJVMJD45H11T4G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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од. на суму грн.
| FDB024N08BL7 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 80V
Pulsed drain current: 916A
Drain current: 162A
Gate charge: 178nC
On-state resistance: 2.4mΩ
Power dissipation: 246W
Gate-source voltage: ±20V
Case: D2PAK
Kind of channel: enhancement
Mounting: SMD
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од. на суму грн.
| FDMA1024NZ |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 6A; 1.4W; WDFN6
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 6A
Drain current: 5A
Gate charge: 7.3nC
On-state resistance: 75mΩ
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: WDFN6
Kind of channel: enhancement
Mounting: SMD
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| FDME1024NZT |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Technology: PowerTrench®
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Gate charge: 4.2nC
On-state resistance: 0.16Ω
Power dissipation: 1.4W
Gate-source voltage: ±8V
Case: MicroFET
Kind of channel: enhancement
Mounting: SMD
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| NTMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 158A; 14W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFD024N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS024N06CT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS024N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFS4C024NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21.7A; Idm: 174A; 2.57W; DFN5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 174A
Drain current: 21.7A
Gate charge: 14nC
On-state resistance: 2.8mΩ
Power dissipation: 2.57W
Gate-source voltage: ±20V
Case: DFN5
Kind of channel: enhancement
Mounting: SMD
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| NTS4001NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Power dissipation: 0.33W
Gate-source voltage: ±20V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.2A
On-state resistance: 1.5Ω
Power dissipation: 0.33W
Gate-source voltage: ±20V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 2789 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.65 грн |
| 52+ | 8.07 грн |
| 60+ | 6.92 грн |
| 89+ | 4.68 грн |
| 102+ | 4.08 грн |
| 250+ | 3.58 грн |
| 500+ | 3.35 грн |
| 1000+ | 3.20 грн |
| NTS4173PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -800mA
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -800mA
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 1978 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.75 грн |
| 34+ | 12.28 грн |
| 50+ | 8.32 грн |
| 100+ | 6.92 грн |
| 500+ | 4.94 грн |
| NTS4409NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.75A
Gate charge: 1.2nC
On-state resistance: 0.4Ω
Power dissipation: 0.28W
Gate-source voltage: ±8V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.75A
Gate charge: 1.2nC
On-state resistance: 0.4Ω
Power dissipation: 0.28W
Gate-source voltage: ±8V
Case: SC70; SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
на замовлення 6 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.65 грн |
| NCP1216AD100R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 86...120kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 86...120kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
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| NCP1216AD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
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| NCP1216D65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 10÷12.2VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 57...75kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 10...12.2V DC
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| NCP1217D100R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 90...110kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Topology: flyback
Operating voltage: 7.6...16V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 90...110kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Topology: flyback
Operating voltage: 7.6...16V DC
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| NCP1217D133R2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 120...146kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Topology: flyback
Operating voltage: 7.6...16V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; flyback; 7.6÷16VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.5A
Frequency: 120...146kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: 0...125°C
Topology: flyback
Operating voltage: 7.6...16V DC
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| NCP1219AD100R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 9.4...20V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 85÷107kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 85...107kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 9.4...20V DC
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| NCP1219AD65R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 55...71kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 7.6...16V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; -500÷800mA; 55÷71kHz
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -500...800mA
Frequency: 55...71kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Kind of package: reel; tape
Application: SMPS
Operating voltage: 7.6...16V DC
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