| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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MURS360T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.28V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 5976 шт: термін постачання 14-30 дні (днів) |
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| MURS360BT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
на замовлення 782 шт: термін постачання 14-30 дні (днів) |
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KSA928AYTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Power dissipation: 1W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Collector current: 2A Collector-emitter voltage: 30V Current gain: 160...320 Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MURS120T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 0.875V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 2364 шт: термін постачання 14-30 дні (днів) |
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MURS260T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 2A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMB Max. forward voltage: 1.45V Max. forward impulse current: 35A Kind of package: reel; tape |
на замовлення 1623 шт: термін постачання 14-30 дні (днів) |
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| MURS480ET3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 4A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.53V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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| MURS140T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.25V Kind of package: reel; tape |
на замовлення 1451 шт: термін постачання 14-30 дні (днів) |
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| MURS220T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.95V Kind of package: reel; tape |
на замовлення 2300 шт: термін постачання 14-30 дні (днів) |
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| MURS105T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMB Max. forward voltage: 0.875V Kind of package: reel; tape |
на замовлення 2470 шт: термін постачання 14-30 дні (днів) |
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| MURS340T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 3A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SMC Max. forward voltage: 1.25V Kind of package: reel; tape |
на замовлення 2050 шт: термін постачання 14-30 дні (днів) |
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| TCA0372DWR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV Mounting: SMT Number of channels: dual; 2 Type of integrated circuit: operational amplifier Kind of package: reel; tape Case: SO16 Operating temperature: -40...125°C Input offset voltage: 1mV Slew rate: 1.4V/μs Voltage supply range: 5...40V DC Bandwidth: 1.4MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TCA0372DWR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier Type of integrated circuit: operational amplifier |
на замовлення 9000 шт: термін постачання 14-30 дні (днів) |
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| IRFM120ATF | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223 Mounting: SMD Case: SOT223 Polarisation: unipolar Gate charge: 16nC On-state resistance: 0.2Ω Drain current: 2.3A Power dissipation: 2.4W Pulsed drain current: 18A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1256ESN65T1G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback Type of integrated circuit: PMIC Operating voltage: 8.9...26V DC Case: TSOP6 Mounting: SMD Operating temperature: -40...125°C Output current: -0.5...0.5A Number of channels: 1 Frequency: 61...70kHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: flyback |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MMSZ5256ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Manufacturer series: MMSZ52xxE Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 30V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMMBZ5256ELT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode Case: SOT23 Mounting: SMD Manufacturer series: MMBZ52xxELT1G Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 30V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZMMSZ5256ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode Case: SOD123 Mounting: SMD Manufacturer series: MMSZ52xxE Semiconductor structure: single diode Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 30V Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA144TET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA144TM3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Current gain: 120...250 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTA144WET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Current gain: 80...140 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FDC3612 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2780 шт: термін постачання 14-30 дні (днів) |
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NDS332P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3 Case: SuperSOT-3 Kind of channel: enhancement Features of semiconductor devices: logic level Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -1A Gate charge: 5nC On-state resistance: 0.74Ω Power dissipation: 0.5W Gate-source voltage: ±8V |
на замовлення 1645 шт: термін постачання 14-30 дні (днів) |
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NDS331N | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.5/0.46W; SOT23 Case: SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Gate charge: 3.5nC On-state resistance: 210/160mΩ Power dissipation: 0.5/0.46W Gate-source voltage: ±8V |
на замовлення 1602 шт: термін постачання 14-30 дні (днів) |
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| NCV4275CDS33R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; D2PAK-5; SMD Case: D2PAK-5 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Kind of package: reel; tape Mounting: SMD Output current: 0.45A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCV4276CDS33R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; D2PAK-5; SMD Case: D2PAK-5 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Kind of package: reel; tape Mounting: SMD Output current: 0.4A Number of channels: 1 Output voltage: 3.3V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MBR1H100SFT3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.68V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MBR60H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.81V Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward impulse current: 350A |
на замовлення 54 шт: термін постачання 14-30 дні (днів) |
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MBR60L45CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Max. forward voltage: 0.76V Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MBR41H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.76V Kind of package: tube Max. load current: 40A Max. forward impulse current: 350A |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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| SS25 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.3W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SS25FA | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C677NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFN5 Mounting: SMD Case: DFN5 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 9.7nC On-state resistance: 15mΩ Power dissipation: 18W Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 166A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFS08N2D5C | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8 Mounting: SMD Case: PQFN8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 60nC On-state resistance: 2.7mΩ Power dissipation: 138W Drain-source voltage: 80V Drain current: 166A Pulsed drain current: 823A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTTFS4C06NTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8 Mounting: SMD Case: WDFN8 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.6nC On-state resistance: 4.2mΩ Power dissipation: 31W Drain-source voltage: 30V Drain current: 67A Pulsed drain current: 166A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS5C677NLWFT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFNW5 Mounting: SMD Case: DFNW5 Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 9.7nC On-state resistance: 15mΩ Power dissipation: 18W Drain-source voltage: 60V Drain current: 36A Pulsed drain current: 166A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5225B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
на замовлення 4989 шт: термін постачання 14-30 дні (днів) |
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| 1N5228BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5222B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.5V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5226BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5227B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5223B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5227BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N5229BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP140AMXD330TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 3.3V Output current: 0.15A Case: XDFN4 Mounting: SMD Manufacturer series: NCP140 Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.6...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP148AFCT180T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 450mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 1.8V Output current: 0.45A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP148 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP140AMXD180TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; XDFN4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.39V Output voltage: 1.8V Output current: 0.15A Case: XDFN4 Mounting: SMD Manufacturer series: NCP140 Operating temperature: -40...85°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.6...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1421DMR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; Micro8; boost Type of integrated circuit: PMIC Output voltage: 1.5...5V Output current: 0.6A Case: Micro8 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1...5V Frequency: 1.2MHz Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1422MNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; DFN10; boost Type of integrated circuit: PMIC Output voltage: 1.5...5V Output current: 0.8A Case: DFN10 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1...5V Frequency: 1.2MHz Topology: boost |
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| NCP1423DMR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 0.8÷3.3V; Uout: 1.8÷3.3V; Micro10; boost Type of integrated circuit: PMIC Output voltage: 1.8...3.3V Output current: 0.4A Case: Micro10 Mounting: SMD Operating temperature: -40...85°C Number of channels: 1 Input voltage: 0.8...3.3V Frequency: 0.6MHz Topology: boost |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP148AFCT285T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.85V; 450mA; WLCSP4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.29V Output voltage: 2.85V Output current: 0.45A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP148 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V |
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| NCP145AMX100TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 1V; 500mA; XDFN4; SMD; -40÷85°C; ±1.5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 0.14V Output voltage: 1V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NCP145AMX105TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 1.1V; 500mA; XDFN4; SMD; -40÷85°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 0.14V Output voltage: 1.1V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1...5.5V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NCP145AMX120TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 1.2V; 500mA; XDFN4; SMD; -40÷85°C Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 0.14V Output voltage: 1.2V Output current: 0.5A Case: XDFN4 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1...5.5V Quiescent current: 80µA |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| NCP148AFCT260T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 2.6V; 450mA; WLCSP4; SMD; NCP148; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 0.18V Output voltage: 2.6V Output current: 0.45A Case: WLCSP4 Mounting: SMD Manufacturer series: NCP148 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.9...5.5V Quiescent current: 65µA |
на замовлення 4982 шт: термін постачання 14-30 дні (днів) |
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| FOD3125 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 60ns Turn-off time: 60ns Max. off-state voltage: 5V Output voltage: 0...35V Slew rate: 50kV/μs |
товару немає в наявності |
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| NTND31225CZTAG | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Mounting: SMD Case: XLLGA6 Kind of channel: enhancement Type of transistor: N/P-MOSFET Power dissipation: 0.125W Drain current: 220/-127mA On-state resistance: 1.5/5Ω Gate-source voltage: ±8V Drain-source voltage: 20/-20V Polarisation: unipolar Kind of package: reel; tape Kind of transistor: complementary pair |
товару немає в наявності |
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| NCP45560IMNTWG-H | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Kind of integrated circuit: high-side Case: DFN12 Type of integrated circuit: power switch Active logical level: high Kind of output: N-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 6.8mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 17A |
товару немає в наявності |
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| NCP45560IMNTWG-L | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12 Kind of integrated circuit: high-side Case: DFN12 Type of integrated circuit: power switch Active logical level: low Kind of output: N-Channel Kind of package: reel; tape Mounting: SMD On-state resistance: 6.8mΩ Control voltage: 0.5...13.5V DC Number of channels: 1 Supply voltage: 3...5.5V DC Output current: 17A |
товару немає в наявності |
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|
FQD2N90TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
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| FQU2N90TU-AM002 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK Polarisation: unipolar Gate charge: 15nC On-state resistance: 7.2Ω Drain current: 1.08A Pulsed drain current: 6.8A Gate-source voltage: ±30V Power dissipation: 50W Drain-source voltage: 900V Case: IPAK Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
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В кошику од. на суму грн. |
| MURS360T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMC; Ufmax: 1.28V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.28V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 5976 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.98 грн |
| 27+ | 15.61 грн |
| 30+ | 14.10 грн |
| 34+ | 12.51 грн |
| 100+ | 10.91 грн |
| 250+ | 10.49 грн |
| 500+ | 10.16 грн |
| 1000+ | 9.82 грн |
| MURS360BT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 782 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 18+ | 23.33 грн |
| 20+ | 21.57 грн |
| 25+ | 19.39 грн |
| 50+ | 17.96 грн |
| 100+ | 16.87 грн |
| 250+ | 15.53 грн |
| 500+ | 14.77 грн |
| KSA928AYTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 30V; 2A; 1W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 1W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 160...320
Frequency: 120MHz
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В кошику
од. на суму грн.
| MURS120T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 875mV; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 0.875V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.21 грн |
| 21+ | 20.31 грн |
| 23+ | 18.80 грн |
| 50+ | 15.53 грн |
| 100+ | 14.10 грн |
| 500+ | 10.91 грн |
| 1000+ | 9.57 грн |
| MURS260T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 75ns; SMB; Ufmax: 1.45V; Ifsm: 35A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMB
Max. forward voltage: 1.45V
Max. forward impulse current: 35A
Kind of package: reel; tape
на замовлення 1623 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 31+ | 13.76 грн |
| 50+ | 13.09 грн |
| MURS480ET3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.73 грн |
| 8+ | 57.07 грн |
| 10+ | 53.71 грн |
| 50+ | 50.36 грн |
| 100+ | 48.68 грн |
| MURS140T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 75ns; SMB; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 1451 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.27 грн |
| 35+ | 12.25 грн |
| 38+ | 11.25 грн |
| 50+ | 9.23 грн |
| 100+ | 8.39 грн |
| 500+ | 6.88 грн |
| 1000+ | 6.46 грн |
| MURS220T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMB; Ufmax: 950mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.95V
Kind of package: reel; tape
на замовлення 2300 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.02 грн |
| 20+ | 20.98 грн |
| 22+ | 19.22 грн |
| 50+ | 15.44 грн |
| 100+ | 14.02 грн |
| 250+ | 12.09 грн |
| 500+ | 10.74 грн |
| 1000+ | 9.40 грн |
| MURS105T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 0.875V
Kind of package: reel; tape
на замовлення 2470 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.83 грн |
| 20+ | 20.98 грн |
| 23+ | 19.05 грн |
| 100+ | 13.85 грн |
| 500+ | 10.83 грн |
| 1000+ | 10.41 грн |
| MURS340T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 3A; 75ns; SMC; Ufmax: 1.25V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 3A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SMC
Max. forward voltage: 1.25V
Kind of package: reel; tape
на замовлення 2050 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.69 грн |
| 24+ | 17.79 грн |
| 25+ | 16.87 грн |
| 50+ | 14.77 грн |
| 100+ | 14.02 грн |
| 500+ | 12.51 грн |
| 1000+ | 11.58 грн |
| TCA0372DWR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 5÷40VDC; SO16; 1mV
Mounting: SMT
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Case: SO16
Operating temperature: -40...125°C
Input offset voltage: 1mV
Slew rate: 1.4V/μs
Voltage supply range: 5...40V DC
Bandwidth: 1.4MHz
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од. на суму грн.
| TCA0372DWR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier
Type of integrated circuit: operational amplifier
на замовлення 9000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 87.67 грн |
| IRFM120ATF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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В кошику
од. на суму грн.
| NCP1256ESN65T1G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Operating voltage: 8.9...26V DC
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Number of channels: 1
Frequency: 61...70kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; TSOP6; flyback
Type of integrated circuit: PMIC
Operating voltage: 8.9...26V DC
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
Output current: -0.5...0.5A
Number of channels: 1
Frequency: 61...70kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
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од. на суму грн.
| MMSZ5256ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Kind of package: reel; tape
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од. на суму грн.
| SZMMBZ5256ELT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Manufacturer series: MMBZ52xxELT1G
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode
Case: SOT23
Mounting: SMD
Manufacturer series: MMBZ52xxELT1G
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Kind of package: reel; tape
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| SZMMSZ5256ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; SMD; reel,tape; SOD123; single diode
Case: SOD123
Mounting: SMD
Manufacturer series: MMSZ52xxE
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 30V
Application: automotive industry
Kind of package: reel; tape
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| DTA144TET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 3000pcs.
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| DTA144TM3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...250
Quantity in set/package: 8000pcs.
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| DTA144WET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Current gain: 80...140
Quantity in set/package: 3000pcs.
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| FDC3612 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2780 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.58 грн |
| 14+ | 31.39 грн |
| 16+ | 27.70 грн |
| 50+ | 20.56 грн |
| 100+ | 19.72 грн |
| NDS332P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Gate charge: 5nC
On-state resistance: 0.74Ω
Power dissipation: 0.5W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1A; 0.5W; SuperSOT-3
Case: SuperSOT-3
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1A
Gate charge: 5nC
On-state resistance: 0.74Ω
Power dissipation: 0.5W
Gate-source voltage: ±8V
на замовлення 1645 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 15+ | 28.62 грн |
| 100+ | 18.72 грн |
| 500+ | 12.59 грн |
| 1000+ | 11.67 грн |
| NDS331N |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.5/0.46W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Gate charge: 3.5nC
On-state resistance: 210/160mΩ
Power dissipation: 0.5/0.46W
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; 0.5/0.46W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Gate charge: 3.5nC
On-state resistance: 210/160mΩ
Power dissipation: 0.5/0.46W
Gate-source voltage: ±8V
на замовлення 1602 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.44 грн |
| 19+ | 23.08 грн |
| 50+ | 18.04 грн |
| 100+ | 16.11 грн |
| 500+ | 12.17 грн |
| 1000+ | 10.74 грн |
| 1500+ | 10.49 грн |
| NCV4275CDS33R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; D2PAK-5; SMD
Case: D2PAK-5
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; D2PAK-5; SMD
Case: D2PAK-5
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Output current: 0.45A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| NCV4276CDS33R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; D2PAK-5; SMD
Case: D2PAK-5
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; D2PAK-5; SMD
Case: D2PAK-5
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Mounting: SMD
Output current: 0.4A
Number of channels: 1
Output voltage: 3.3V
Application: automotive industry
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| MBR1H100SFT3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.68V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| MBR60H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.81V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 350A
на замовлення 54 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.23 грн |
| 50+ | 103.23 грн |
| MBR60L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Max. forward voltage: 0.76V
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward impulse current: 200A
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| MBR41H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO220AB; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.76V
Kind of package: tube
Max. load current: 40A
Max. forward impulse current: 350A
на замовлення 97 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.00 грн |
| 10+ | 107.43 грн |
| 50+ | 106.59 грн |
| SS25 |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape; 1.3W
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.3W
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| SS25FA |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
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| NVMFS5C677NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFN5
Mounting: SMD
Case: DFN5
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFN5
Mounting: SMD
Case: DFN5
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
Kind of channel: enhancement
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| NTMFS08N2D5C |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; Idm: 823A; 138W; PQFN8
Mounting: SMD
Case: PQFN8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 60nC
On-state resistance: 2.7mΩ
Power dissipation: 138W
Drain-source voltage: 80V
Drain current: 166A
Pulsed drain current: 823A
Kind of channel: enhancement
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| NTTFS4C06NTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.6nC
On-state resistance: 4.2mΩ
Power dissipation: 31W
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; Idm: 166A; 31W; WDFN8
Mounting: SMD
Case: WDFN8
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.6nC
On-state resistance: 4.2mΩ
Power dissipation: 31W
Drain-source voltage: 30V
Drain current: 67A
Pulsed drain current: 166A
Kind of channel: enhancement
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| NVMFS5C677NLWFT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFNW5
Mounting: SMD
Case: DFNW5
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 166A; 18W; DFNW5
Mounting: SMD
Case: DFNW5
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 9.7nC
On-state resistance: 15mΩ
Power dissipation: 18W
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 166A
Kind of channel: enhancement
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| 1N5225B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4989 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.33 грн |
| 209+ | 2.01 грн |
| 218+ | 1.93 грн |
| 286+ | 1.47 грн |
| 315+ | 1.33 грн |
| 500+ | 1.29 грн |
| 1N5228BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5222B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.5V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.5V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5226BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5223B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5227BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5229BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| NCP140AMXD330TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP140
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.6...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP140
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.6...5.5V
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| NCP148AFCT180T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 1.8V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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| NCP140AMXD180TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.39V
Output voltage: 1.8V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP140
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.6...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; XDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.39V
Output voltage: 1.8V
Output current: 0.15A
Case: XDFN4
Mounting: SMD
Manufacturer series: NCP140
Operating temperature: -40...85°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.6...5.5V
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| NCP1421DMR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; Micro8; boost
Type of integrated circuit: PMIC
Output voltage: 1.5...5V
Output current: 0.6A
Case: Micro8
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1...5V
Frequency: 1.2MHz
Topology: boost
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; Micro8; boost
Type of integrated circuit: PMIC
Output voltage: 1.5...5V
Output current: 0.6A
Case: Micro8
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1...5V
Frequency: 1.2MHz
Topology: boost
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| NCP1422MNR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; DFN10; boost
Type of integrated circuit: PMIC
Output voltage: 1.5...5V
Output current: 0.8A
Case: DFN10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1...5V
Frequency: 1.2MHz
Topology: boost
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1÷5V; Uout: 1.5÷5V; DFN10; boost
Type of integrated circuit: PMIC
Output voltage: 1.5...5V
Output current: 0.8A
Case: DFN10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1...5V
Frequency: 1.2MHz
Topology: boost
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| NCP1423DMR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 0.8÷3.3V; Uout: 1.8÷3.3V; Micro10; boost
Type of integrated circuit: PMIC
Output voltage: 1.8...3.3V
Output current: 0.4A
Case: Micro10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 0.8...3.3V
Frequency: 0.6MHz
Topology: boost
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 0.8÷3.3V; Uout: 1.8÷3.3V; Micro10; boost
Type of integrated circuit: PMIC
Output voltage: 1.8...3.3V
Output current: 0.4A
Case: Micro10
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 0.8...3.3V
Frequency: 0.6MHz
Topology: boost
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| NCP148AFCT285T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.85V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.85V; 450mA; WLCSP4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.29V
Output voltage: 2.85V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
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| NCP145AMX100TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1V; 500mA; XDFN4; SMD; -40÷85°C; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1V; 500mA; XDFN4; SMD; -40÷85°C; ±1.5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 435+ | 14.28 грн |
| 2200+ | 12.67 грн |
| NCP145AMX105TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1.1V; 500mA; XDFN4; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1.1V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1.1V; 500mA; XDFN4; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1.1V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1...5.5V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 428+ | 14.55 грн |
| 2100+ | 12.92 грн |
| NCP145AMX120TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1.2V; 500mA; XDFN4; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1...5.5V
Quiescent current: 80µA
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 1.2V; 500mA; XDFN4; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.14V
Output voltage: 1.2V
Output current: 0.5A
Case: XDFN4
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1...5.5V
Quiescent current: 80µA
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 459+ | 13.56 грн |
| 2200+ | 12.25 грн |
| NCP148AFCT260T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.6V; 450mA; WLCSP4; SMD; NCP148; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.18V
Output voltage: 2.6V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Quiescent current: 65µA
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.6V; 450mA; WLCSP4; SMD; NCP148; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 0.18V
Output voltage: 2.6V
Output current: 0.45A
Case: WLCSP4
Mounting: SMD
Manufacturer series: NCP148
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.9...5.5V
Quiescent current: 65µA
на замовлення 4982 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 432+ | 14.46 грн |
| 2100+ | 12.84 грн |
| FOD3125 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 60ns
Turn-off time: 60ns
Max. off-state voltage: 5V
Output voltage: 0...35V
Slew rate: 50kV/μs
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| NTND31225CZTAG |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Mounting: SMD
Case: XLLGA6
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Power dissipation: 0.125W
Drain current: 220/-127mA
On-state resistance: 1.5/5Ω
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Polarisation: unipolar
Kind of package: reel; tape
Kind of transistor: complementary pair
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| NCP45560IMNTWG-H |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of integrated circuit: high-side
Case: DFN12
Type of integrated circuit: power switch
Active logical level: high
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 6.8mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 17A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of integrated circuit: high-side
Case: DFN12
Type of integrated circuit: power switch
Active logical level: high
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 6.8mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 17A
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| NCP45560IMNTWG-L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of integrated circuit: high-side
Case: DFN12
Type of integrated circuit: power switch
Active logical level: low
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 6.8mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 17A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; DFN12
Kind of integrated circuit: high-side
Case: DFN12
Type of integrated circuit: power switch
Active logical level: low
Kind of output: N-Channel
Kind of package: reel; tape
Mounting: SMD
On-state resistance: 6.8mΩ
Control voltage: 0.5...13.5V DC
Number of channels: 1
Supply voltage: 3...5.5V DC
Output current: 17A
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| FQD2N90TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; DPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
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| FQU2N90TU-AM002 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.08A; Idm: 6.8A; 50W; IPAK
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 7.2Ω
Drain current: 1.08A
Pulsed drain current: 6.8A
Gate-source voltage: ±30V
Power dissipation: 50W
Drain-source voltage: 900V
Case: IPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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