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MOC3022SR2VM ONSEMI moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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FGH40N60SMDF FGH40N60SMDF ONSEMI fgh40n60smdf-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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LM385BZ-1.2RAG LM385BZ-1.2RAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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SMUN5113DW1T1G SMUN5113DW1T1G ONSEMI dta144ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
27+16.28 грн
32+12.73 грн
50+8.11 грн
63+6.35 грн
100+4.16 грн
291+3.21 грн
800+3.04 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MUN5213DW1T1G MUN5213DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C15BBD73C7E0CE&compId=MUN5213DW1.PDF?ci_sign=ad52f96a33a6db1128a0b04bf344a9e05d8af038 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Polarisation: bipolar
на замовлення 590 шт:
термін постачання 21-30 дні (днів)
27+16.28 грн
39+10.34 грн
65+6.13 грн
100+4.87 грн
342+2.74 грн
Мінімальне замовлення: 27
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NSVS50031SB3T1G ONSEMI nsvs50030sb3-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.1W; CPH3; automotive industry
Polarisation: bipolar
Case: CPH3
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Application: automotive industry
Kind of package: reel; tape
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BAS21TMR6T1G ONSEMI bas21tmr6-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
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FAN7601BMX ONSEMI fan7601b-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
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BDX53BG ONSEMI bdx53b-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MOC3072SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3072SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3072TVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3073SR2M ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
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MOC3073SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3073SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
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TIP110 TIP110 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1E41AE5FBE469&compId=TIP110.pdf?ci_sign=c73a1af66bf45e89dadaae80a7ce85af3a391cdd Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
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NC7SZ373P6X NC7SZ373P6X ONSEMI NC7SZ373-D.PDF Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
20+21.42 грн
29+14.16 грн
35+11.61 грн
46+8.83 грн
100+6.05 грн
250+5.25 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
H11AA4SR2M H11AA4SR2M ONSEMI h11aa4m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 100V
Case: PDIP6
CTR@If: 100%@10mA
Manufacturer series: H11AA
на замовлення 979 шт:
термін постачання 21-30 дні (днів)
8+59.97 грн
11+36.75 грн
25+31.18 грн
50+30.55 грн
Мінімальне замовлення: 8
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H11AA4M H11AA4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADEA0D6&compId=H11AA4M.pdf?ci_sign=0d6cf97b34845a87b0640c532da7f56176266eac Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
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NCP1606BDR2G NCP1606BDR2G ONSEMI ncp1606-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MURB1620CTT4G MURB1620CTT4G ONSEMI murb1620ct-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.895V
Load current: 8A x2
Max. forward impulse current: 100A
Max. load current: 16A
Max. off-state voltage: 200V
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
4+108.80 грн
10+70.00 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NTMFS4C05NT1G ONSEMI ntmfs4c05n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 78A; Idm: 174A; 33W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78A
Pulsed drain current: 174A
Power dissipation: 33W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C05NTAG ONSEMI nvtfs4c05n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C05NWFTAG ONSEMI NVTFS4C05N-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C10NT1G ONSEMI ntmfs4c10n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C10NWFTAG ONSEMI nvtfs4c10n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; Idm: 196A; 14W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 196A
Power dissipation: 14W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 19.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ5231BLT1G MMBZ5231BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
на замовлення 770 шт:
термін постачання 21-30 дні (днів)
50+8.57 грн
76+5.25 грн
127+3.15 грн
158+2.52 грн
500+1.61 грн
680+1.38 грн
Мінімальне замовлення: 50
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MMBZ5232BLT1G MMBZ5232BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)
56+7.77 грн
85+4.69 грн
129+3.09 грн
157+2.54 грн
250+1.96 грн
500+1.63 грн
726+1.29 грн
1997+1.22 грн
Мінімальне замовлення: 56
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MMBZ5230BLT1G MMBZ5230BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)
57+7.60 грн
84+4.77 грн
103+3.90 грн
205+1.95 грн
500+1.32 грн
751+1.24 грн
1000+1.16 грн
1500+1.14 грн
2067+1.13 грн
Мінімальне замовлення: 57
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DTC144EM3T5G ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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DTC144TET1G ONSEMI dtc144t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
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DTC144TM3T5G ONSEMI dtc144t-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 8000pcs.
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MC74LVX4245DWR2G ONSEMI mc74lvx4245-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SO24
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Quiescent current: 80µA
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NCP1236AD100R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236AD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236BD100R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236BD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236DD65R2G ONSEMI ncp1236-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP718ASN500T1G NCP718ASN500T1G ONSEMI ncp718-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 300mA; TSOT23-5; SMD
Manufacturer series: NCP718
Operating temperature: -40...125°C
Output current: 0.3A
Voltage drop: 0.38V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.5...24V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: TSOT23-5
Mounting: SMD
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FSA2866UMX ONSEMI Category: Analog multiplexers and switches
Description: IC: analog switch; crosspoint switch; Ch: 2; UMLP20; 1.65÷4.3VDC
Operating temperature: -40...85°C
Case: UMLP20
Quiescent current: 1µA
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: crosspoint switch
Mounting: SMD
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SMMUN2113LT1G SMMUN2113LT1G ONSEMI dta144e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2906 шт:
термін постачання 21-30 дні (днів)
56+7.71 грн
91+4.38 грн
126+3.17 грн
250+2.69 грн
500+2.33 грн
571+1.64 грн
1571+1.55 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MMUN2113LT1G MMUN2113LT1G ONSEMI dta144e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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MMUN2113LT3G MMUN2113LT3G ONSEMI dta144e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SZ1SMB5934BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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BD442G BD442G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE989BF2B85D3D138BF&compId=BD436-8%2CBD440-2.pdf?ci_sign=08943676f14e8cad8d43e29458a5c41ba68eb3ce Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 40...475
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
6+76.25 грн
10+48.92 грн
26+36.75 грн
71+34.76 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NST3906DP6T5G ONSEMI nst3906dp6-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NST3946DP6T5G ONSEMI nst3946dp6-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Kind of transistor: complementary pair
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NST847BDP6T5G ONSEMI nst847bdp6-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.42W; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NST857BDP6T5G ONSEMI nst857bdp6-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 420W; SOT963
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 420W
Case: SOT963
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSBC114YDP6T5G ONSEMI dtc114yd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBA114TDP6T5G ONSEMI dta114td-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBA115TDP6T5G ONSEMI dta115td-d.pdf ONSMS25174-1.pdf?t.download=true&u=5oefqw Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 100kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBA123TDP6T5G ONSEMI DTA123TD-D.PDF dta123td-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBC114EDP6T5G ONSEMI dtc114ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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NSBC114TDP6T5G ONSEMI dtc114td-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBC123JDP6T5G ONSEMI dtc123jd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC143ZDP6T5G ONSEMI dtc143zd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC144EDP6T5G ONSEMI dtc144ed-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC144WDP6T5G ONSEMI dtc144wd-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
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NST847BPDP6T5G ONSEMI nst847bpdp6-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
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MOC3022SR2VM moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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FGH40N60SMDF fgh40n60smdf-d.pdf
FGH40N60SMDF
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 119nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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LM385BZ-1.2RAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDD96D74117E34360D3&compId=LM285_LM385B.PDF?ci_sign=f66be552eb736c587c9a455a7f00f90948b3196b
LM385BZ-1.2RAG
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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SMUN5113DW1T1G dta144ed-d.pdf
SMUN5113DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.28 грн
32+12.73 грн
50+8.11 грн
63+6.35 грн
100+4.16 грн
291+3.21 грн
800+3.04 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
MUN5213DW1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C15BBD73C7E0CE&compId=MUN5213DW1.PDF?ci_sign=ad52f96a33a6db1128a0b04bf344a9e05d8af038
MUN5213DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of transistor: BRT
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Polarisation: bipolar
на замовлення 590 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.28 грн
39+10.34 грн
65+6.13 грн
100+4.87 грн
342+2.74 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
NSVS50031SB3T1G nsvs50030sb3-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.1W; CPH3; automotive industry
Polarisation: bipolar
Case: CPH3
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.1W
Collector current: 3A
Collector-emitter voltage: 50V
Current gain: 200...560
Frequency: 360MHz
Application: automotive industry
Kind of package: reel; tape
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BAS21TMR6T1G bas21tmr6-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Features of semiconductor devices: small signal
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
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FAN7601BMX fan7601b-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
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BDX53BG bdx53b-d.pdf
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MOC3072SR2VM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3072SVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3072TVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3073SR2M moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
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MOC3073SR2VM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3073SVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
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TIP110 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD1E41AE5FBE469&compId=TIP110.pdf?ci_sign=c73a1af66bf45e89dadaae80a7ce85af3a391cdd
TIP110
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
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NC7SZ373P6X NC7SZ373-D.PDF
NC7SZ373P6X
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.42 грн
29+14.16 грн
35+11.61 грн
46+8.83 грн
100+6.05 грн
250+5.25 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
H11AA4SR2M h11aa4m-d.pdf
H11AA4SR2M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 100V
Case: PDIP6
CTR@If: 100%@10mA
Manufacturer series: H11AA
на замовлення 979 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.97 грн
11+36.75 грн
25+31.18 грн
50+30.55 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
H11AA4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADEA0D6&compId=H11AA4M.pdf?ci_sign=0d6cf97b34845a87b0640c532da7f56176266eac
H11AA4M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
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NCP1606BDR2G ncp1606-d.pdf
NCP1606BDR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MURB1620CTT4G murb1620ct-d.pdf
MURB1620CTT4G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 35ns
Max. forward voltage: 0.895V
Load current: 8A x2
Max. forward impulse current: 100A
Max. load current: 16A
Max. off-state voltage: 200V
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+108.80 грн
10+70.00 грн
Мінімальне замовлення: 4
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NTMFS4C05NT1G ntmfs4c05n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 78A; Idm: 174A; 33W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 78A
Pulsed drain current: 174A
Power dissipation: 33W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C05NTAG nvtfs4c05n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C05NWFTAG NVTFS4C05N-D.PDF
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 433A; 34W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 433A
Power dissipation: 34W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS4C10NT1G ntmfs4c10n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS4C10NWFTAG nvtfs4c10n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 47A; Idm: 196A; 14W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 47A
Pulsed drain current: 196A
Power dissipation: 14W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 19.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ5231BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5231BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.1V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Semiconductor structure: single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 5µA
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 5.1V
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
на замовлення 770 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.57 грн
76+5.25 грн
127+3.15 грн
158+2.52 грн
500+1.61 грн
680+1.38 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
MMBZ5232BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5232BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.77 грн
85+4.69 грн
129+3.09 грн
157+2.54 грн
250+1.96 грн
500+1.63 грн
726+1.29 грн
1997+1.22 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
MMBZ5230BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5230BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
57+7.60 грн
84+4.77 грн
103+3.90 грн
205+1.95 грн
500+1.32 грн
751+1.24 грн
1000+1.16 грн
1500+1.14 грн
2067+1.13 грн
Мінімальне замовлення: 57
В кошику  од. на суму  грн.
DTC144EM3T5G dtc144e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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DTC144TET1G dtc144t-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 3000pcs.
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DTC144TM3T5G dtc144t-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Current gain: 120...300
Quantity in set/package: 8000pcs.
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MC74LVX4245DWR2G mc74lvx4245-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver; translator
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SO24
Manufacturer series: LVX
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2.7...5.5V DC
Kind of package: reel; tape
Quiescent current: 80µA
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NCP1236AD100R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236AD65R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236BD100R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236BD65R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP1236DD65R2G ncp1236-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
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NCP718ASN500T1G ncp718-d.pdf
NCP718ASN500T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 300mA; TSOT23-5; SMD
Manufacturer series: NCP718
Operating temperature: -40...125°C
Output current: 0.3A
Voltage drop: 0.38V
Number of channels: 1
Output voltage: 5V
Tolerance: ±2%
Input voltage: 2.5...24V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Case: TSOT23-5
Mounting: SMD
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FSA2866UMX
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; crosspoint switch; Ch: 2; UMLP20; 1.65÷4.3VDC
Operating temperature: -40...85°C
Case: UMLP20
Quiescent current: 1µA
Supply voltage: 1.65...4.3V DC
Number of channels: 2
Type of integrated circuit: analog switch
Kind of integrated circuit: crosspoint switch
Mounting: SMD
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SMMUN2113LT1G dta144e-d.pdf
SMMUN2113LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
на замовлення 2906 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.71 грн
91+4.38 грн
126+3.17 грн
250+2.69 грн
500+2.33 грн
571+1.64 грн
1571+1.55 грн
Мінімальне замовлення: 56
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MMUN2113LT1G dta144e-d.pdf
MMUN2113LT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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MMUN2113LT3G dta144e-d.pdf
MMUN2113LT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
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SZ1SMB5934BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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BD442G pVersion=0046&contRep=ZT&docId=005056AB82531EE989BF2B85D3D138BF&compId=BD436-8%2CBD440-2.pdf?ci_sign=08943676f14e8cad8d43e29458a5c41ba68eb3ce
BD442G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 80V; 4A; 36W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 36W
Case: TO225
Current gain: 40...475
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+76.25 грн
10+48.92 грн
26+36.75 грн
71+34.76 грн
Мінімальне замовлення: 6
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NST3906DP6T5G nst3906dp6-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.42W; SOT963
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NST3946DP6T5G nst3946dp6-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.42W
Case: SOT963
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Kind of transistor: complementary pair
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NST847BDP6T5G nst847bdp6-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.42W; SOT963
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NST857BDP6T5G nst857bdp6-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 420W; SOT963
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 420W
Case: SOT963
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NSBC114YDP6T5G dtc114yd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBA114TDP6T5G dta114td-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...250
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBA115TDP6T5G dta115td-d.pdf ONSMS25174-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 100kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 100kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBA123TDP6T5G DTA123TD-D.PDF dta123td-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; 2.2kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBC114EDP6T5G dtc114ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
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NSBC114TDP6T5G dtc114td-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
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NSBC123JDP6T5G dtc123jd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC143ZDP6T5G dtc143zd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC144EDP6T5G dtc144ed-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 47kΩ
Kind of transistor: BRT
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NSBC144WDP6T5G dtc144wd-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 408mW; SOT963; R1: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 22kΩ
Kind of transistor: BRT
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NST847BPDP6T5G nst847bpdp6-d.pdf
Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.42W
Case: SOT963
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Kind of transistor: complementary pair
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