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1SMA5919BT3G 1SMA5919BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 987 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
26+15.51 грн
50+11.59 грн
100+10.23 грн
250+8.63 грн
500+7.59 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMA5919BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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MC74VHC00DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F8616660D3&compId=MC74VHC00-D.pdf?ci_sign=719c5ebb7a4c3c48e90a36beccc4f303c3431792 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
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MC74VHC00DTG MC74VHC00DTG ONSEMI mc74vhc00-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: VHC
Operating temperature: -55...125°C
Kind of package: tube
Technology: CMOS
Quiescent current: 40µA
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MC74VHC00DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F86167A0D3&compId=MC74VHC00-D.pdf?ci_sign=ce38ec06aa825be6fb40ed5b81692269a7e7ac66 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
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NSVBC847BTT1G ONSEMI bc847att1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 200...450
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
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MDB6S MDB6S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7944CDBA8C469&compId=MDB10S.pdf?ci_sign=c9680a5e276c1b288e66059ff0114753c6d644e2 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2132 шт:
термін постачання 21-30 дні (днів)
12+37.01 грн
13+31.97 грн
14+29.81 грн
25+25.18 грн
72+13.11 грн
198+12.39 грн
Мінімальне замовлення: 12
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MC33178DMR2G ONSEMI mc33178-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; Micro8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
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2N3442G 2N3442G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB98FFAE4990469&compId=2N3442.PDF?ci_sign=ad6838674f65cdd97b22d65ce36be8f40cb2f2d0 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
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NCP308SN500T1G ONSEMI ncp308-d.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Supply voltage: 1.6...5.5V DC
Threshold on-voltage: 4.65V
Active logical level: low
Kind of RESET output: open drain
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NCP163ASN500T1G NCP163ASN500T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
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SZ1SMB5927BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDP120N10 ONSEMI fdp120n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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FDB120N10 ONSEMI fdb120n10-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP100N10 ONSEMI fdp100n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 300A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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NL37WZ07USG ONSEMI nl37wz07-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; SMD; US8; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
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1N4743ATR 1N4743ATR ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4743A 1N4743A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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FCH099N65S3-F155 ONSEMI fch099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB099N65S3 ONSEMI fcb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB199N65S3 ONSEMI fcb199n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 35A
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FCH029N65S3-F155 ONSEMI fch029n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
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NVB099N65S3 ONSEMI nvb099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H ONSEMI nthl019n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 ONSEMI fcmt099n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 ONSEMI fcpf099n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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BYW80-200G BYW80-200G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
на замовлення 1288 шт:
термін постачання 21-30 дні (днів)
8+54.23 грн
10+42.36 грн
50+40.76 грн
Мінімальне замовлення: 8
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MJE15029G MJE15029G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
3+143.07 грн
10+111.90 грн
11+91.12 грн
29+86.32 грн
Мінімальне замовлення: 3
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NCP163ASN330T1G NCP163ASN330T1G ONSEMI ncp163-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
Voltage drop: 0.175V
на замовлення 688 шт:
термін постачання 21-30 дні (днів)
20+22.38 грн
23+17.58 грн
26+15.51 грн
31+13.11 грн
100+12.95 грн
Мінімальне замовлення: 20
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NB3M8302CDR2G NB3M8302CDR2G ONSEMI nb3m8302c-d.pdf Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 4.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS; TTL
Quiescent current: 13mA
Number of channels: 1
Number of outputs: 2
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NTLJF3117PT1G ONSEMI ntljf3117p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP431BISNT1G NCP431BISNT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0 Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G MJ11033G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499 description Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
1+769.52 грн
5+664.20 грн
В кошику  од. на суму  грн.
1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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SZ1SMB5940BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188 Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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74AC04MTCX 74AC04MTCX ONSEMI 74ACT04-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83 Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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1SMA5932BT3G 1SMA5932BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2983 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
24+17.18 грн
50+13.19 грн
100+11.51 грн
500+8.39 грн
1000+7.59 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
LP2951CD-3.0R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV2951ACD3.3R2G ONSEMI lp2950-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV2951ACDR2G ONSEMI lp2950-d.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FPDB40PH60B ONSEMI fpdb40ph60b-d.pdf Category: Unclassified
Description: FPDB40PH60B
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
10+1217.11 грн
30+1017.47 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
MC33179DTBR2G ONSEMI mc33178-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
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NSR0340V2T1G NSR0340V2T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999E51FDB6254F820&compId=NSR0340V2.pdf?ci_sign=6d4bff568ae106d56d32e773434e2c32c231d5ec Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
97+4.16 грн
112+3.58 грн
120+3.35 грн
500+2.83 грн
1000+2.61 грн
1500+2.49 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
NSR0240HT1G ONSEMI nsr0240h-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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NSR0240P2T5G ONSEMI nsr0240p2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 0.2A; reel,tape
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
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NSR01F30MXT5G ONSEMI nsr01f30mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR01L30MXT5G ONSEMI nsr01l30mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR0240MX2T5G ONSEMI nsr0240mx2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 40V; 0.2A; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
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NSR0240MX2WT5G ONSEMI nsr0240mx2-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFNW2; SMD; 40V; 0.2A; reel,tape
Case: X2DFNW2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
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NSR0240V2T5G ONSEMI nsr0240v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
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NSR02F30MXT5G ONSEMI nsr02f30mx-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR0520V2T5G ONSEMI nsr0520v2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 0.5A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Case: SOD523
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FXL4TD245BQX FXL4TD245BQX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5BAD76B25820&compId=FXL4TD245BQX.pdf?ci_sign=1fa606bce601c2b5039c2fe686101d006a2d8d6b Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
на замовлення 2035 шт:
термін постачання 21-30 дні (днів)
6+72.30 грн
7+63.14 грн
25+61.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCS20282FCTTAG ONSEMI ncs20282-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; WLCSP9; 2.5÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail
Case: WLCSP9
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Voltage supply range: 2.5...5.5V DC
Slew rate: 5V/μs
Bandwidth: 7MHz
Number of channels: dual
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MUN5112DW1T1G MUN5112DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7B8E0F546749&compId=MUN5112DW1.PDF?ci_sign=53cd7d7b219f4787409c7fe4f401de51774bb2b9 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
63+6.89 грн
109+3.68 грн
175+2.29 грн
500+1.69 грн
1000+1.50 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC03ADR2G MC74HC03ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C471820&compId=MC74HC03A-D.pdf?ci_sign=4e8e3fc866f89c0efec7243bba0834f512d62e15 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
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MC74HC03ADTR2G MC74HC03ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C471820&compId=MC74HC03A-D.pdf?ci_sign=4e8e3fc866f89c0efec7243bba0834f512d62e15 Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: TSSOP14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
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SZMM3Z18VT1G SZMM3Z18VT1G ONSEMI MM3ZxxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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UJ3C065030K3S UJ3C065030K3S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E9AB2640F8BF&compId=UJ3C065030K3S.pdf?ci_sign=5663cc3c35fc17870ed27e952c7182e1b042139f Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 30mΩ
Drain current: 62A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 441W
Drain-source voltage: 650V
Case: TO247-3
Kind of transistor: cascode
Version: ESD
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1SMA5919BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5919BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 987 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
26+15.51 грн
50+11.59 грн
100+10.23 грн
250+8.63 грн
500+7.59 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
SZ1SMA5919BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.6V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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MC74VHC00DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F8616660D3&compId=MC74VHC00-D.pdf?ci_sign=719c5ebb7a4c3c48e90a36beccc4f303c3431792
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
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MC74VHC00DTG mc74vhc00-d.pdf
MC74VHC00DTG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: VHC
Operating temperature: -55...125°C
Kind of package: tube
Technology: CMOS
Quiescent current: 40µA
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MC74VHC00DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E632F86167A0D3&compId=MC74VHC00-D.pdf?ci_sign=ce38ec06aa825be6fb40ed5b81692269a7e7ac66
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; VHC; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Family: VHC
Manufacturer series: VHC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
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NSVBC847BTT1G bc847att1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.2W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Current gain: 200...450
Collector-emitter voltage: 45V
Application: automotive industry
Frequency: 100MHz
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MDB6S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F7944CDBA8C469&compId=MDB10S.pdf?ci_sign=c9680a5e276c1b288e66059ff0114753c6d644e2
MDB6S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 1A; Ifsm: 30A; MicroDIP
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: MicroDIP
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 2132 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+37.01 грн
13+31.97 грн
14+29.81 грн
25+25.18 грн
72+13.11 грн
198+12.39 грн
Мінімальне замовлення: 12
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MC33178DMR2G mc33178-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; Micro8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: dual; 2
Case: Micro8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Integrated circuit features: low power
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
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2N3442G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DB98FFAE4990469&compId=2N3442.PDF?ci_sign=ad6838674f65cdd97b22d65ce36be8f40cb2f2d0
2N3442G
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 10A; 117W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 10A
Power dissipation: 117W
Case: TO3
Mounting: THT
Kind of package: in-tray
Frequency: 800kHz
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NCP308SN500T1G ncp308-d.pdf
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); TSOP6
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Case: TSOP6
Mounting: SMD
Operating temperature: -40...125°C
DC supply current: 6µA
Maximum output current: 5mA
Number of channels: 1
Supply voltage: 1.6...5.5V DC
Threshold on-voltage: 4.65V
Active logical level: low
Kind of RESET output: open drain
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NCP163ASN500T1G ncp163-d.pdf
NCP163ASN500T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
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SZ1SMB5927BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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FDP120N10 fdp120n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 74A; Idm: 296A; 170W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 74A
Pulsed drain current: 296A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
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FDB120N10 fdb120n10-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 296A; 170W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDP100N10 fdp100n10-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; Idm: 300A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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NL37WZ07USG nl37wz07-d.pdf
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 3; SMD; US8; -55÷125°C; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 3
Mounting: SMD
Case: US8
Operating temperature: -55...125°C
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
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1N4743ATR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743ATR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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1N4743A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B5AFD73EB740D8&compId=1N47xxA.PDF?ci_sign=d27c4835f1cef0a530570e114d214d5552b2fa0d
1N4743A
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
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FCH099N65S3-F155 fch099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 75A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 79mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB099N65S3 fcb099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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FCB199N65S3 fcb199n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 14A; Idm: 35A; 98W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 14A
Power dissipation: 98W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 35A
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FCH029N65S3-F155 fch029n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 201nC
Pulsed drain current: 200A
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NVB099N65S3 nvb099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 61nC
Pulsed drain current: 75A
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NTHL019N65S3H nthl019n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 282nC
Pulsed drain current: 328A
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FCMT099N65S3 fcmt099n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 227W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 227W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 56nC
Pulsed drain current: 75A
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FCPF099N65S3 fcpf099n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 75A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Pulsed drain current: 75A
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BYW80-200G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868868017BA6A745&compId=BYW80-200G.PDF?ci_sign=56b60dde4211bdb98c10afa8426444b809616a8d
BYW80-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Reverse recovery time: 35ns
Max. load current: 16A
Heatsink thickness: 1.15...1.39mm
на замовлення 1288 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+54.23 грн
10+42.36 грн
50+40.76 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
MJE15029G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD0C8D41761C469&compId=MJE15031G.PDF?ci_sign=d3f27eb0c49b3f5041cfa666240f905eace1dedf
MJE15029G
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 120V; 8A; 50W; TO220AB
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Collector current: 8A
Power dissipation: 50W
Collector-emitter voltage: 120V
Frequency: 30MHz
Polarisation: bipolar
Kind of package: tube
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+143.07 грн
10+111.90 грн
11+91.12 грн
29+86.32 грн
Мінімальне замовлення: 3
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NCP163ASN330T1G ncp163-d.pdf
NCP163ASN330T1G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 250mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.25A
Case: SOT23-5
Mounting: SMD
Manufacturer series: NCP163
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.2...5.5V
Voltage drop: 0.175V
на замовлення 688 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.38 грн
23+17.58 грн
26+15.51 грн
31+13.11 грн
100+12.95 грн
Мінімальне замовлення: 20
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NB3M8302CDR2G nb3m8302c-d.pdf
NB3M8302CDR2G
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; fanout buffer; Ch: 1; CMOS,TTL; 4.6VDC; SMD; SO8; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: fanout buffer
Case: SO8
Mounting: SMD
Supply voltage: 4.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Technology: CMOS; TTL
Quiescent current: 13mA
Number of channels: 1
Number of outputs: 2
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NTLJF3117PT1G ntljf3117p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -4.1A; Idm: -20A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Pulsed drain current: -20A
Power dissipation: 2.3W
Case: WDFN6
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCP431BISNT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94BA8FC89B9100CE&compId=NCP431_432.PDF?ci_sign=92886f9d83cf1b4f0ad4830a5b78f35ef74c42e0
NCP431BISNT1G
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±0.5%; SOT23; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...85°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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MJ11033G description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD07A9B690C2469&compId=MJ11032G.PDF?ci_sign=7f6b0e43d6d7b9d29a2a21851b22e79b9d1bb499
MJ11033G
Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 50A
Power dissipation: 300W
Case: TO3
Mounting: THT
Kind of package: in-tray
на замовлення 76 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+769.52 грн
5+664.20 грн
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1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
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SZ1SMB5940BT3G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B7A954D517C0D8&compId=1SMB59xxBT3G.PDF?ci_sign=00940bc774a386c4b9a2e8d5fc8fd6a9c14db188
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 43V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 43V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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74AC04MTCX 74ACT04-D.PDF
74AC04MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷6VDC; -40÷85°C; AC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Number of inputs: 1
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74AC04SCX pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62691A72440D3&compId=74ACT04-D.pdf?ci_sign=b17e55d78a46ae3e5863f355d403b04d7efb3c83
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; SMD; SOIC14; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: 6
Mounting: SMD
Case: SOIC14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Manufacturer series: AC
Number of inputs: 1
Kind of integrated circuit: hex; inverter
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1SMA5932BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5932BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 20V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2983 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
24+17.18 грн
50+13.19 грн
100+11.51 грн
500+8.39 грн
1000+7.59 грн
Мінімальне замовлення: 20
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LP2951CD-3.0R2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV2951ACD3.3R2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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NCV2951ACDR2G lp2950-d.pdf
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷29V; 0.1A; SO8
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...29V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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FPDB40PH60B fpdb40ph60b-d.pdf
Виробник: ONSEMI
Category: Unclassified
Description: FPDB40PH60B
на замовлення 100 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+1217.11 грн
30+1017.47 грн
Мінімальне замовлення: 10
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MC33179DTBR2G mc33178-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; TSSOP14; ±2÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC
Integrated circuit features: low noise
Kind of package: reel; tape
Input bias current: 600nA
Input offset current: 60nA
Number of channels: quad
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NSR0340V2T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999E51FDB6254F820&compId=NSR0340V2.pdf?ci_sign=6d4bff568ae106d56d32e773434e2c32c231d5ec
NSR0340V2T1G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
на замовлення 2800 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
97+4.16 грн
112+3.58 грн
120+3.35 грн
500+2.83 грн
1000+2.61 грн
1500+2.49 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
NSR0240HT1G nsr0240h-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; reel,tape
Case: SOD323
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.71V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
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NSR0240P2T5G nsr0240p2-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD923; SMD; 40V; 0.2A; reel,tape
Case: SOD923
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
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NSR01F30MXT5G nsr01f30mx-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR01L30MXT5G nsr01l30mx-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR0240MX2T5G nsr0240mx2-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFN2; SMD; 40V; 0.2A; reel,tape
Case: X2DFN2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
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NSR0240MX2WT5G nsr0240mx2-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X2DFNW2; SMD; 40V; 0.2A; reel,tape
Case: X2DFNW2
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.2A
Max. forward voltage: 0.65V
Max. forward impulse current: 3A
Max. off-state voltage: 40V
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NSR0240V2T5G nsr0240v2t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Case: SOD523
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Load current: 0.25A
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Max. off-state voltage: 40V
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NSR02F30MXT5G nsr02f30mx-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
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NSR0520V2T5G nsr0520v2t1-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 20V; 0.5A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Mounting: SMD
Max. forward voltage: 0.48V
Load current: 0.5A
Max. forward impulse current: 2A
Max. off-state voltage: 20V
Case: SOD523
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FXL4TD245BQX pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5BAD76B25820&compId=FXL4TD245BQX.pdf?ci_sign=1fa606bce601c2b5039c2fe686101d006a2d8d6b
FXL4TD245BQX
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
на замовлення 2035 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+72.30 грн
7+63.14 грн
25+61.54 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
NCS20282FCTTAG ncs20282-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; WLCSP9; 2.5÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail
Case: WLCSP9
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 800pA
Input offset current: 10pA
Input offset voltage: 1.5mV
Voltage supply range: 2.5...5.5V DC
Slew rate: 5V/μs
Bandwidth: 7MHz
Number of channels: dual
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MUN5112DW1T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A0EA7B8E0F546749&compId=MUN5112DW1.PDF?ci_sign=53cd7d7b219f4787409c7fe4f401de51774bb2b9
MUN5112DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 22kΩ
Mounting: SMD
Type of transistor: PNP x2
Kind of package: reel; tape
Case: SC70-6; SC88; SOT363
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2379 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+6.89 грн
109+3.68 грн
175+2.29 грн
500+1.69 грн
1000+1.50 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MC74HC03ADR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C471820&compId=MC74HC03A-D.pdf?ci_sign=4e8e3fc866f89c0efec7243bba0834f512d62e15
MC74HC03ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
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MC74HC03ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C471820&compId=MC74HC03A-D.pdf?ci_sign=4e8e3fc866f89c0efec7243bba0834f512d62e15
MC74HC03ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: TSSOP14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of inputs: 2
Supply voltage: 2...6V DC
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SZMM3Z18VT1G MM3ZxxT1G.PDF
SZMM3Z18VT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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UJ3C065030K3S pVersion=0046&contRep=ZT&docId=005056AB82531EE990B3E9AB2640F8BF&compId=UJ3C065030K3S.pdf?ci_sign=5663cc3c35fc17870ed27e952c7182e1b042139f
UJ3C065030K3S
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 62A
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate charge: 51nC
On-state resistance: 30mΩ
Drain current: 62A
Gate-source voltage: ±25V
Pulsed drain current: 230A
Power dissipation: 441W
Drain-source voltage: 650V
Case: TO247-3
Kind of transistor: cascode
Version: ESD
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