| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FOD3184S | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Insulation voltage: 5kV Case: PDIP8 Max. off-state voltage: 5V Manufacturer series: FOD3184 Slew rate: 50kV/μs Kind of output: MOSFET |
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| FOD3184SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SMD8 Conform to the norm: UL Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: FOD3184 |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| FOD3184SDV | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 5kV Case: SMD8 Conform to the norm: UL Max. off-state voltage: 5V Number of pins: 8 Manufacturer series: FOD3184 |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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2SB815-7-TB-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59 Case: SC59 Kind of package: reel; tape Frequency: 250MHz Type of transistor: PNP Mounting: SMD Power dissipation: 0.2W Collector current: 0.7A Collector-emitter voltage: 15V Current gain: 300...600 Polarisation: bipolar |
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MC74VHCT125ADR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: SO14 Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 40µA Supply voltage: 2...5.5V DC Kind of output: 3-state Manufacturer series: VHCT Technology: CMOS Number of channels: 4 Mounting: SMD |
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LM2575D2T-ADJG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 1.23...37V DC Output current: 1A Case: D2PAK-5 Mounting: SMD Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
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| NE521DR2G | ONSEMI |
Category: SMD comparators Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT Kind of comparator: fast Kind of package: reel; tape Mounting: SMT Case: SO14 Operating temperature: 0...70°C Delay time: 8.2ns Input offset current: 1µA Input bias current: 7.5µA Input offset voltage: 7.5mV Number of comparators: 2 Operating voltage: 4.75...5.25/-4.75...-5.25V Type of integrated circuit: comparator |
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GBU4K | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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TL431BIDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
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В кошику од. на суму грн. | ||||||||||||||||
| TL431BCDR2G | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: 0...70°C Operating voltage: 2.495...36V Kind of package: reel; tape Maximum output current: 0.1A |
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MBRS360T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.63V Kind of package: reel; tape |
на замовлення 18609 шт: термін постачання 14-30 дні (днів) |
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| MC74HC4040ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of inputs: 2 Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -55...125°C Manufacturer series: HC Kind of package: reel; tape Supply voltage: 2...6V DC Technology: CMOS Number of channels: 1 |
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MC74HC4040ADR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC Type of integrated circuit: digital Kind of integrated circuit: 12-stage; binary ripple counter Number of inputs: 2 Mounting: SMD Case: SOIC16 Family: HC Operating temperature: -55...125°C Manufacturer series: HC Kind of package: reel; tape Supply voltage: 2...6V DC Technology: CMOS Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCV2904DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA Number of channels: dual; 2 Type of integrated circuit: operational amplifier Case: SO8 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Bandwidth: 3MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| NCV2904DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA Number of channels: dual; 2 Type of integrated circuit: operational amplifier Case: Micro8 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 200nA Input offset voltage: 13mV Slew rate: 2.4V/μs Voltage supply range: 3...32V DC Bandwidth: 3MHz |
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В кошику од. на суму грн. | |||||||||||||||||
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MJ2955G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 15A Power dissipation: 115W Case: TO3; TO204 Current gain: 20...70 Mounting: THT Kind of package: in-tray Frequency: 2.5MHz |
на замовлення 169 шт: термін постачання 14-30 дні (днів) |
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BSR16 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Collector-emitter voltage: 60V Kind of package: reel; tape Frequency: 300MHz Polarisation: bipolar Type of transistor: PNP Mounting: SMD Case: SOT23; TO236AB Power dissipation: 0.35W Collector current: 0.8A |
на замовлення 307 шт: термін постачання 14-30 дні (днів) |
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MM3Z3V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Tolerance: ±5% Manufacturer series: MM3ZxxT1G |
на замовлення 2606 шт: термін постачання 14-30 дні (днів) |
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MM5Z3V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode Tolerance: ±5% Manufacturer series: MM5Z |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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MM3Z3V6B | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.6V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Tolerance: ±2% Manufacturer series: MM3ZxxB |
на замовлення 3780 шт: термін постачання 14-30 дні (днів) |
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BZX84C3V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 3070 шт: термін постачання 14-30 дні (днів) |
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MM3Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 672 шт: термін постачання 14-30 дні (днів) |
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SZMM3Z5V6T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5361BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB |
на замовлення 1095 шт: термін постачання 14-30 дні (днів) |
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| 1N5361BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 27V; reel,tape; CASE017AA; single diode; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 27V Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Case: CASE017AA Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
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FSDM311A | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 320mA; 650V; 67kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.32A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: DIP8 Mounting: THT Operating temperature: -25...85°C Topology: flyback Input voltage: 85...265V On-state resistance: 14Ω Duty cycle factor: 60...74% Power: 8W Application: SMPS Operating voltage: 7...20V DC |
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В кошику од. на суму грн. | ||||||||||||||||
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1N3070TR | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW Type of diode: rectifying Case: DO35 Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Capacitance: 5pF Max. forward voltage: 1V Max. forward impulse current: 4A Power dissipation: 0.5W Reverse recovery time: 50ns Features of semiconductor devices: small signal |
на замовлення 2966 шт: термін постачання 14-30 дні (днів) |
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| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14051BDR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 1 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SP8T Quiescent current: 600µA Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NIV1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NIV2161MTTAG | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape Case: WDFN10 Mounting: SMD Number of channels: 2 Semiconductor structure: bidirectional Kind of package: reel; tape Type of diode: TVS array Max. off-state voltage: 16V Breakdown voltage: 23V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NIS1161MTTAG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 23V; WDFN6; reel,tape Case: WDFN6 Mounting: SMD Kind of package: reel; tape Type of diode: TVS Max. off-state voltage: 16V Breakdown voltage: 23V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MM3Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SZMM3Z5V6ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G Application: automotive industry |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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NTR5105PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.141A Power dissipation: 0.347W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1044 шт: термін постачання 14-30 дні (днів) |
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NCP5106BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
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В кошику од. на суму грн. | ||||||||||||||||
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NCP5106ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
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В кошику од. на суму грн. | ||||||||||||||||
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NCP5104DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Kind of package: reel; tape Impulse rise time: 160ns Number of channels: 2 Supply voltage: 10...20V DC Voltage class: 600V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Integrated circuit features: integrated bootstrap functionality Protection: undervoltage UVP Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
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В кошику од. на суму грн. | ||||||||||||||||
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NCP5109ADR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Impulse rise time: 160ns Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
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В кошику од. на суму грн. | ||||||||||||||||
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NCP5109BDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Case: SO8 Mounting: SMD Impulse rise time: 160ns Supply voltage: 10...20V DC Voltage class: 200V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-side; low-side Topology: IGBT half-bridge; MOSFET half-bridge Operating temperature: -40...125°C Output current: -500...250mA Pulse fall time: 75ns |
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В кошику од. на суму грн. | ||||||||||||||||
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FGHL40T120SWD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 118nC Kind of package: tube |
на замовлення 413 шт: термін постачання 14-30 дні (днів) |
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| NVXK2VR40WDT2 | ONSEMI |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A Electrical mounting: THT Topology: MOSFET three-phase bridge Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Technology: SiC Semiconductor structure: transistor/transistor Kind of package: tube Gate-source voltage: -15...25V On-state resistance: 71mΩ Drain current: 31A Power dissipation: 102W Pulsed drain current: 170A Drain-source voltage: 1.2kV Case: APM32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| M74HCT4852ADTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 5 Technology: CMOS; TTL Mounting: SMD Case: TSSOP16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74HCT4851ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Number of inputs: 11 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
товару немає в наявності |
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MC74HCT4852ADR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer Number of channels: 2 Number of inputs: 8 Technology: CMOS; TTL Mounting: SMD Case: SOIC16 Manufacturer series: HCT Family: HCT Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
| MC74ACT02DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT Technology: TTL Case: SOIC14 Type of integrated circuit: digital Kind of gate: NOR Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Number of inputs: 2 Supply voltage: 4.5...5.5V DC Family: ACT Manufacturer series: ACT |
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| BC848CLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.3W Case: SC59 Mounting: SMD Frequency: 100MHz |
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DTC143ZET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 80...200 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
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DTA143ZET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ Mounting: SMD Case: SC75; SOT416 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 80...140 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP |
на замовлення 2910 шт: термін постачання 14-30 дні (днів) |
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| SZESDR0502BT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT416 Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVDAN222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Application: automotive industry Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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| DAN222G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common cathode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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В кошику од. на суму грн. | |||||||||||||||||
| DAP222G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape Type of diode: switching Semiconductor structure: common anode; double Mounting: SMD Case: SOT416 Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 1.2V Max. off-state voltage: 80V Features of semiconductor devices: small signal Reverse recovery time: 4ns |
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В кошику од. на суму грн. | |||||||||||||||||
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1N5400RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD |
на замовлення 1056 шт: термін постачання 14-30 дні (днів) |
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| 1N5400G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Kind of package: bulk Max. forward impulse current: 200A Case: DO201AD |
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В кошику од. на суму грн. | |||||||||||||||||
| 2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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| 2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTS4173PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW Kind of package: reel; tape Mounting: SMD Type of transistor: P-MOSFET Case: SC70; SOT323 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -5A Drain current: -0.8A Gate charge: 10.1nC On-state resistance: 0.15Ω Power dissipation: 0.29W Gate-source voltage: ±12V Kind of channel: enhancement |
на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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| FOD3184S |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Slew rate: 50kV/μs
Kind of output: MOSFET
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: MOSFET; Uinsul: 5kV; PDIP8; 50kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 5kV
Case: PDIP8
Max. off-state voltage: 5V
Manufacturer series: FOD3184
Slew rate: 50kV/μs
Kind of output: MOSFET
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| FOD3184SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 62.06 грн |
| FOD3184SDV |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 5kV; SMD8; Urmax: 5V; PIN: 8; FOD3184
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 5kV
Case: SMD8
Conform to the norm: UL
Max. off-state voltage: 5V
Number of pins: 8
Manufacturer series: FOD3184
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 60.26 грн |
| 2SB815-7-TB-E |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 15V; 0.7A; 0.2W; SC59
Case: SC59
Kind of package: reel; tape
Frequency: 250MHz
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.2W
Collector current: 0.7A
Collector-emitter voltage: 15V
Current gain: 300...600
Polarisation: bipolar
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В кошику
од. на суму грн.
| MC74VHCT125ADR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Manufacturer series: VHCT
Technology: CMOS
Number of channels: 4
Mounting: SMD
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS; SMD; SO14; VHCT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: SO14
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Manufacturer series: VHCT
Technology: CMOS
Number of channels: 4
Mounting: SMD
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| LM2575D2T-ADJG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 137.61 грн |
| 5+ | 107.74 грн |
| 10+ | 99.39 грн |
| 25+ | 94.37 грн |
| NE521DR2G |
|
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 8.2ns; 4.75÷5.25/-4.75÷-5.25V; SMT
Kind of comparator: fast
Kind of package: reel; tape
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Delay time: 8.2ns
Input offset current: 1µA
Input bias current: 7.5µA
Input offset voltage: 7.5mV
Number of comparators: 2
Operating voltage: 4.75...5.25/-4.75...-5.25V
Type of integrated circuit: comparator
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| GBU4K |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| TL431BIDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| TL431BCDR2G |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; reel,tape; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: 0...70°C
Operating voltage: 2.495...36V
Kind of package: reel; tape
Maximum output current: 0.1A
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| MBRS360T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Kind of package: reel; tape
на замовлення 18609 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.99 грн |
| 29+ | 14.87 грн |
| 30+ | 13.95 грн |
| 33+ | 12.86 грн |
| 50+ | 12.03 грн |
| 100+ | 11.61 грн |
| 250+ | 11.11 грн |
| 2500+ | 10.19 грн |
| MC74HC4040ADTR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Manufacturer series: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 1
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Manufacturer series: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 1
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| MC74HC4040ADR2G |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of inputs: 2
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Manufacturer series: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 1
Category: Counters/dividers
Description: IC: digital; 12-stage,binary ripple counter; Ch: 1; IN: 2; CMOS; HC
Type of integrated circuit: digital
Kind of integrated circuit: 12-stage; binary ripple counter
Number of inputs: 2
Mounting: SMD
Case: SOIC16
Family: HC
Operating temperature: -55...125°C
Manufacturer series: HC
Kind of package: reel; tape
Supply voltage: 2...6V DC
Technology: CMOS
Number of channels: 1
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| NCV2904DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Case: SO8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; SO8; 13mV; 200nA
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Case: SO8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
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| NCV2904DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 3MHz; Ch: 2; 3÷32VDC; Micro8; 13mV; 200nA
Number of channels: dual; 2
Type of integrated circuit: operational amplifier
Case: Micro8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 200nA
Input offset voltage: 13mV
Slew rate: 2.4V/μs
Voltage supply range: 3...32V DC
Bandwidth: 3MHz
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| MJ2955G |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
на замовлення 169 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 379.55 грн |
| 10+ | 234.68 грн |
| 25+ | 212.97 грн |
| 100+ | 210.46 грн |
| BSR16 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: PNP
Mounting: SMD
Case: SOT23; TO236AB
Power dissipation: 0.35W
Collector current: 0.8A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Collector-emitter voltage: 60V
Kind of package: reel; tape
Frequency: 300MHz
Polarisation: bipolar
Type of transistor: PNP
Mounting: SMD
Case: SOT23; TO236AB
Power dissipation: 0.35W
Collector current: 0.8A
на замовлення 307 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.58 грн |
| 21+ | 20.80 грн |
| 50+ | 14.36 грн |
| 100+ | 12.19 грн |
| MM3Z3V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: MM3ZxxT1G
на замовлення 2606 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.20 грн |
| 90+ | 4.68 грн |
| 105+ | 4.01 грн |
| 167+ | 2.51 грн |
| 205+ | 2.04 грн |
| 500+ | 1.25 грн |
| 1000+ | 1.12 грн |
| MM5Z3V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Tolerance: ±5%
Manufacturer series: MM5Z
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.09 грн |
| 66+ | 6.35 грн |
| 76+ | 5.51 грн |
| 148+ | 2.82 грн |
| 200+ | 2.46 грн |
| 400+ | 2.25 грн |
| 500+ | 2.20 грн |
| 3000+ | 2.01 грн |
| MM3Z3V6B |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Tolerance: ±2%
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.6V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Tolerance: ±2%
Manufacturer series: MM3ZxxB
на замовлення 3780 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 63+ | 6.68 грн |
| 76+ | 5.51 грн |
| 142+ | 2.96 грн |
| 200+ | 2.51 грн |
| 500+ | 2.06 грн |
| 1000+ | 1.93 грн |
| BZX84C3V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 3070 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 84+ | 5.01 грн |
| 95+ | 4.43 грн |
| 142+ | 2.96 грн |
| 171+ | 2.45 грн |
| 500+ | 1.65 грн |
| 1000+ | 1.44 грн |
| 3000+ | 1.19 грн |
| MM3Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 672 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.09 грн |
| 87+ | 4.84 грн |
| 137+ | 3.06 грн |
| 169+ | 2.47 грн |
| 500+ | 1.53 грн |
| SZMM3Z5V6T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
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| 1N5361BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; bulk; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
на замовлення 1095 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.18 грн |
| 23+ | 18.21 грн |
| 26+ | 16.20 грн |
| 50+ | 13.20 грн |
| 1N5361BRLG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Case: CASE017AA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 5W; 27V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 27V
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Case: CASE017AA
Kind of package: reel; tape
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| FSDM311A |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 320mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.32A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 14Ω
Duty cycle factor: 60...74%
Power: 8W
Application: SMPS
Operating voltage: 7...20V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 320mA; 650V; 67kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.32A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: DIP8
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback
Input voltage: 85...265V
On-state resistance: 14Ω
Duty cycle factor: 60...74%
Power: 8W
Application: SMPS
Operating voltage: 7...20V DC
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| 1N3070TR |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Reverse recovery time: 50ns
Features of semiconductor devices: small signal
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; 500mW
Type of diode: rectifying
Case: DO35
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 5pF
Max. forward voltage: 1V
Max. forward impulse current: 4A
Power dissipation: 0.5W
Reverse recovery time: 50ns
Features of semiconductor devices: small signal
на замовлення 2966 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 48+ | 8.85 грн |
| 74+ | 5.70 грн |
| 100+ | 4.18 грн |
| 500+ | 3.00 грн |
| NVMYS016N10MCLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFS016N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWS016N10MCLT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC14051BDR2G |
|
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SP8T
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 1
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SP8T
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
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| NIV1161MTTAG |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape; automotive industry
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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| NIV2161MTTAG |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 23V; bidirectional; WDFN10; Ch: 2; reel,tape
Case: WDFN10
Mounting: SMD
Number of channels: 2
Semiconductor structure: bidirectional
Kind of package: reel; tape
Type of diode: TVS array
Max. off-state voltage: 16V
Breakdown voltage: 23V
Application: automotive industry
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| NIS1161MTTAG |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 23V; WDFN6; reel,tape
Case: WDFN6
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Max. off-state voltage: 16V
Breakdown voltage: 23V
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| MM3Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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| SZMM3Z5V6ST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Application: automotive industry
на замовлення 248 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.99 грн |
| 44+ | 9.69 грн |
| 61+ | 6.93 грн |
| 100+ | 6.10 грн |
| NTR5105PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.141A; 0.347W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.141A
Power dissipation: 0.347W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1044 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 46+ | 9.19 грн |
| 66+ | 6.36 грн |
| 100+ | 5.43 грн |
| 500+ | 4.39 грн |
| NCP5106BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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| NCP5106ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
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| NCP5104DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Impulse rise time: 160ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Impulse rise time: 160ns
Number of channels: 2
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Protection: undervoltage UVP
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
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| NCP5109ADR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
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| NCP5109BDR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Case: SO8
Mounting: SMD
Impulse rise time: 160ns
Supply voltage: 10...20V DC
Voltage class: 200V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side; low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Operating temperature: -40...125°C
Output current: -500...250mA
Pulse fall time: 75ns
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| FGHL40T120SWD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 118nC
Kind of package: tube
на замовлення 413 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 275.22 грн |
| 3+ | 231.34 грн |
| NVXK2VR40WDT2 |
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 31A; APM32; THT; Idm: 170A
Electrical mounting: THT
Topology: MOSFET three-phase bridge
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Technology: SiC
Semiconductor structure: transistor/transistor
Kind of package: tube
Gate-source voltage: -15...25V
On-state resistance: 71mΩ
Drain current: 31A
Power dissipation: 102W
Pulsed drain current: 170A
Drain-source voltage: 1.2kV
Case: APM32
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| M74HCT4852ADTR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 5
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4...5.5V DC
Kind of package: reel; tape
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| MC74HCT4851ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 11
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Number of inputs: 11
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| MC74HCT4852ADR2G |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Number of inputs: 8
Technology: CMOS; TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
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| MC74ACT02DR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; TTL; SMD; SOIC14; ACT; 4.5÷5.5VDC; ACT
Technology: TTL
Case: SOIC14
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Number of inputs: 2
Supply voltage: 4.5...5.5V DC
Family: ACT
Manufacturer series: ACT
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| BC848CLT3G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 100mA; 300mW; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC59
Mounting: SMD
Frequency: 100MHz
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| DTC143ZET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 80...200
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
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| DTA143ZET1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R2: 47kΩ
Mounting: SMD
Case: SC75; SOT416
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 80...140
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
на замовлення 2910 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.79 грн |
| 69+ | 6.10 грн |
| 109+ | 3.84 грн |
| 500+ | 2.85 грн |
| 1000+ | 2.51 грн |
| SZESDR0502BT1G |
|
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT416; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT416
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| NSVDAN222T1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Application: automotive industry
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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| DAN222G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common cathode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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| DAP222G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT416; Ufmax: 1.2V; reel,tape
Type of diode: switching
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT416
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Max. off-state voltage: 80V
Features of semiconductor devices: small signal
Reverse recovery time: 4ns
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| 1N5400RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
на замовлення 1056 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.89 грн |
| 49+ | 8.69 грн |
| 50+ | 8.52 грн |
| 1N5400G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; bulk; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Kind of package: bulk
Max. forward impulse current: 200A
Case: DO201AD
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| 2SD1624T-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| 2SD1624S-TD-E |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| NTS4173PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -0.8A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.8A; Idm: -5A; 290mW
Kind of package: reel; tape
Mounting: SMD
Type of transistor: P-MOSFET
Case: SC70; SOT323
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -5A
Drain current: -0.8A
Gate charge: 10.1nC
On-state resistance: 0.15Ω
Power dissipation: 0.29W
Gate-source voltage: ±12V
Kind of channel: enhancement
на замовлення 286 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.49 грн |
| 57+ | 7.43 грн |
| 65+ | 6.51 грн |
| 100+ | 6.18 грн |