| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| MOC3053SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC3053M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3053M Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||
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CM1213A-04SO | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 0.225W; unidirectional; SC74; Ch: 4; reel,tape Type of diode: TVS array Case: SC74 Mounting: SMD Max. off-state voltage: 3.3...5V Semiconductor structure: unidirectional Leakage current: 8µA Kind of package: reel; tape Peak pulse power dissipation: 0.225W Breakdown voltage: 6V Application: universal Number of channels: 4 Version: ESD |
на замовлення 2069 шт: термін постачання 21-30 дні (днів) |
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NUP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD Mounting: SMD Kind of package: reel; tape Type of diode: TVS array Semiconductor structure: unidirectional Leakage current: 5µA Number of channels: 2 Max. forward impulse current: 25A Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Case: TSOP6 Application: universal Version: ESD |
на замовлення 5369 шт: термін постачання 21-30 дні (днів) |
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FDN339AN | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Gate charge: 10nC On-state resistance: 61mΩ Power dissipation: 0.5W Drain current: 3A Gate-source voltage: ±8V Drain-source voltage: 20V Case: SuperSOT-3 Kind of package: reel; tape |
на замовлення 3006 шт: термін постачання 21-30 дні (днів) |
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FDN338P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.6A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.165Ω Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 5203 шт: термін постачання 21-30 дні (днів) |
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FDN304PZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.4A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 2094 шт: термін постачання 21-30 дні (днів) |
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| MMBTH10-4LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 800MHz |
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| MMBTH10M3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz |
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MJW21196G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3 Kind of package: tube Mounting: THT Type of transistor: NPN Case: TO247-3 Collector current: 16A Power dissipation: 200W Collector-emitter voltage: 250V Frequency: 4MHz Polarisation: bipolar |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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M74VHC1GT66DTT1G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO Mounting: SMD Kind of package: reel; tape Case: TSOP5 Kind of output: SPST-NO Technology: TTL Operating temperature: -55...125°C Quiescent current: 40µA Number of channels: 1 Supply voltage: 2...5.5V DC Type of integrated circuit: analog switch Manufacturer series: VHC |
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В кошику од. на суму грн. | ||||||||||||||||
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1N4149TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 2pF Kind of package: reel; tape Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
на замовлення 7495 шт: термін постачання 21-30 дні (днів) |
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| ESD8011MUT5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape Type of diode: TVS Max. off-state voltage: 5.5V Breakdown voltage: 7.3V Semiconductor structure: bidirectional Case: X3DFN2 Mounting: SMD Kind of package: reel; tape |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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NCP114AMX185TCG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD Operating temperature: -40...85°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP114 Case: uDFN4 Type of integrated circuit: voltage regulator Voltage drop: 0.33V Output current: 0.3A Number of channels: 1 Tolerance: ±2% Input voltage: 1.7...5.5V Output voltage: 1.85V Mounting: SMD |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NCP186BMX185TAG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD Operating temperature: -40...125°C Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP186x Case: XDFN8 Type of integrated circuit: voltage regulator Voltage drop: 0.28V Output current: 1A Number of channels: 2 Tolerance: ±1% Input voltage: 1.8...5.5V Output voltage: 1.85V Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1SMA5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 1404 шт: термін постачання 21-30 дні (днів) |
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| SZ1SMA5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMA Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC8050SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler Type of optocoupler: optocoupler |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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NCV21872DMR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 270kHz Mounting: SMT Case: Micro8 Operating temperature: -40...125°C Voltage supply range: 1.8...5.5V DC Kind of package: reel; tape Input bias current: 0.4nA Input offset current: 800pA Input offset voltage: 0.045mV Slew rate: 0.1V/μs Integrated circuit features: rail-to-rail; zero-drift Number of channels: dual |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FDD2582 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 21A Power dissipation: 95W Case: DPAK Gate-source voltage: ±20V On-state resistance: 172mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Technology: PowerTrench® |
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| NCP3230MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; QFN40; buck; 4.5÷20.5VDC Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 4.5...20.5V DC Output current: 30A Frequency: 450...550kHz Topology: buck Case: QFN40 Type of integrated circuit: PMIC |
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| NCP3235MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; QFN40; buck; 4.5÷23VDC Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -40...125°C Output current: 15A Number of channels: 1 Operating voltage: 4.5...23V DC Frequency: 500...1210kHz Topology: buck |
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| NCP81274MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 4.5÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 4.5...20V Frequency: 250...1200kHz Topology: buck |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP81276MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 4.5÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 4.5...20V Frequency: 250...1200kHz Topology: buck |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP81611MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 2.8÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Input voltage: 2.8...20V Frequency: 250...1200kHz Topology: buck |
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В кошику од. на суму грн. | |||||||||||||||||
| NCP4200MNR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -40...125°C Output voltage: 0.375...1.8V Number of channels: 1 Input voltage: 1.7...24V Frequency: 220...850kHz; 0.25...6MHz Topology: buck |
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| FDMS3669S | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 24/60A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±12V On-state resistance: 14.5/7.1mΩ Mounting: SMD Gate charge: 24/34nC Kind of package: reel; tape Kind of channel: enhancement |
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| FDMS8018 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 680A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FDMS8333L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 76A Pulsed drain current: 250A Power dissipation: 69W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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| FDMS8320LDC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 192A Pulsed drain current: 300A Power dissipation: 125W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 170nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FDMS86103L | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 51A Pulsed drain current: 414A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FDMS86350ET80 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 140A Power dissipation: 187W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| FPF1504BUCX | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape Type of integrated circuit: power switch Output current: 1.5A Number of channels: 1 Kind of output: P-Channel Mounting: SMD Case: WLCSP4 On-state resistance: 40mΩ Kind of package: reel; tape Supply voltage: 1...3.6V DC Operating temperature: -40...85°C Integrated circuit features: output discharge Version: ESD Active logical level: high |
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GBU4G | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 150A Version: flat Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated Case: GBU |
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| FDMT800100DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 111nC On-state resistance: 5.39mΩ Power dissipation: 156W Drain current: 102A Gate-source voltage: ±20V Drain-source voltage: 100V Pulsed drain current: 989A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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BDV64BG | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 125W Case: TO247-3 Mounting: THT Kind of package: tube |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| MC78M15CDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||||
| MC78M15ABDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||||
| MC78M15ACDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ESD9L5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.4V Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 7793 шт: термін постачання 21-30 дні (днів) |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM20 Gate-source voltage: -8...18V On-state resistance: 10mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 900V Power dissipation: 352W Topology: NTC thermistor; Vienna Rectifier Kind of package: in-tray |
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| FSUSB30UMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape Kind of output: DPDT Case: UMLP10 Kind of integrated circuit: USB switch Mounting: SMD Operating temperature: -40...85°C Quiescent current: 1µA Number of channels: 2 Supply voltage: 3...4.3V DC Type of integrated circuit: analog switch Kind of package: reel; tape |
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| NCP81292MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
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| NCP81295MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
товару немає в наявності |
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| NCP81296MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| NLAS323USG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C Technology: CMOS Case: US8 Kind of output: SPST-NO x2 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Quiescent current: 2µA Number of channels: 2 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: analog switch |
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| MC74AC05DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AC |
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В кошику од. на суму грн. | |||||||||||||||||
| SPS-READER-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323 Interface: I2C; SPI; UART Kind of connector: pin header; SMA development kits accessories features: Arduino Shield compatible |
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|
H11A1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs CTR@If: 50%@10mA Turn-off time: 2µs |
на замовлення 646 шт: термін постачання 21-30 дні (днів) |
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| H11A1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: PDIP6 Max. off-state voltage: 6V Turn-on time: 2µs CTR@If: 50%@10mA Turn-off time: 2µs Manufacturer series: H11Ax |
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В кошику од. на суму грн. | |||||||||||||||||
|
H11A1TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 30V Case: DIP6 CTR@If: 20%@10mA |
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| FDMT800150DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 108nC On-state resistance: 13mΩ Power dissipation: 156W Drain current: 62A Gate-source voltage: ±20V Drain-source voltage: 150V Pulsed drain current: 561A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Case: DFN8 Semiconductor structure: double independent Type of diode: rectifying Kind of package: reel; tape Reverse recovery time: 50ns Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Max. off-state voltage: 200V Max. forward impulse current: 80A |
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| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Case: DFN8 Semiconductor structure: double independent Type of diode: rectifying Kind of package: reel; tape Reverse recovery time: 50ns Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Max. off-state voltage: 200V Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MC74HC03ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Case: SO14 Kind of output: open drain Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Quiescent current: 40µA Number of inputs: 2 Supply voltage: 2...6V DC |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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MC74AC10DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Number of channels: 3 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: NAND Family: AC Number of inputs: 3 Kind of package: tube |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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| MC7815BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 788 шт: термін постачання 21-30 дні (днів) |
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| MOC3053SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC3053M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3053M
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC3053M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3053M
Kind of package: tube
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В кошику
од. на суму грн.
| CM1213A-04SO |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; unidirectional; SC74; Ch: 4; reel,tape
Type of diode: TVS array
Case: SC74
Mounting: SMD
Max. off-state voltage: 3.3...5V
Semiconductor structure: unidirectional
Leakage current: 8µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.225W
Breakdown voltage: 6V
Application: universal
Number of channels: 4
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; unidirectional; SC74; Ch: 4; reel,tape
Type of diode: TVS array
Case: SC74
Mounting: SMD
Max. off-state voltage: 3.3...5V
Semiconductor structure: unidirectional
Leakage current: 8µA
Kind of package: reel; tape
Peak pulse power dissipation: 0.225W
Breakdown voltage: 6V
Application: universal
Number of channels: 4
Version: ESD
на замовлення 2069 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.38 грн |
| 20+ | 20.22 грн |
| 22+ | 19.00 грн |
| 100+ | 14.88 грн |
| 250+ | 13.34 грн |
| NUP2201MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 25A
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: universal
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 25A; 500W; unidirectional; TSOP6; Ch: 2; ESD
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Leakage current: 5µA
Number of channels: 2
Max. forward impulse current: 25A
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: universal
Version: ESD
на замовлення 5369 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.54 грн |
| 15+ | 28.79 грн |
| 30+ | 24.26 грн |
| 50+ | 22.32 грн |
| 100+ | 19.97 грн |
| 500+ | 16.17 грн |
| FDN339AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 61mΩ
Power dissipation: 0.5W
Drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Case: SuperSOT-3
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 61mΩ
Power dissipation: 0.5W
Drain current: 3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Case: SuperSOT-3
Kind of package: reel; tape
на замовлення 3006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.58 грн |
| 16+ | 26.20 грн |
| 50+ | 20.06 грн |
| 100+ | 17.87 грн |
| 250+ | 15.28 грн |
| 500+ | 14.48 грн |
| FDN338P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.6A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 5203 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.71 грн |
| 16+ | 26.52 грн |
| 50+ | 19.25 грн |
| 100+ | 16.66 грн |
| 250+ | 13.83 грн |
| 500+ | 12.13 грн |
| 1000+ | 10.76 грн |
| FDN304PZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.4A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.4A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 2094 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.51 грн |
| 12+ | 35.50 грн |
| 50+ | 25.23 грн |
| 100+ | 21.75 грн |
| 250+ | 18.11 грн |
| 500+ | 17.39 грн |
| MMBTH10-4LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 800MHz
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| MMBTH10M3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
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| MJW21196G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Case: TO247-3
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Frequency: 4MHz
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO247-3
Kind of package: tube
Mounting: THT
Type of transistor: NPN
Case: TO247-3
Collector current: 16A
Power dissipation: 200W
Collector-emitter voltage: 250V
Frequency: 4MHz
Polarisation: bipolar
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.21 грн |
| M74VHC1GT66DTT1G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Kind of output: SPST-NO
Technology: TTL
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 1
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Manufacturer series: VHC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; TSOP5; 2÷5.5VDC; reel,tape; OUT: SPST-NO
Mounting: SMD
Kind of package: reel; tape
Case: TSOP5
Kind of output: SPST-NO
Technology: TTL
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 1
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Manufacturer series: VHC
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| 1N4149TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.5A; reel,tape; Ifsm: 4A; DO35; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 2pF
Kind of package: reel; tape
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
на замовлення 7495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.97 грн |
| 114+ | 3.56 грн |
| 169+ | 2.39 грн |
| 250+ | 2.01 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.50 грн |
| 2000+ | 1.26 грн |
| 5000+ | 1.01 грн |
| ESD8011MUT5G |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 7.3V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 7.3V; bidirectional; X3DFN2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 7.3V
Semiconductor structure: bidirectional
Case: X3DFN2
Mounting: SMD
Kind of package: reel; tape
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.03 грн |
| 29+ | 14.39 грн |
| 33+ | 12.45 грн |
| 40+ | 10.19 грн |
| 100+ | 7.68 грн |
| 500+ | 7.28 грн |
| NCP114AMX185TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.33V
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.85V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 300mA; uDFN4; SMD
Operating temperature: -40...85°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP114
Case: uDFN4
Type of integrated circuit: voltage regulator
Voltage drop: 0.33V
Output current: 0.3A
Number of channels: 1
Tolerance: ±2%
Input voltage: 1.7...5.5V
Output voltage: 1.85V
Mounting: SMD
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.68 грн |
| 41+ | 9.87 грн |
| 46+ | 8.81 грн |
| 100+ | 7.52 грн |
| 250+ | 6.87 грн |
| 1000+ | 6.47 грн |
| NCP186BMX185TAG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP186x
Case: XDFN8
Type of integrated circuit: voltage regulator
Voltage drop: 0.28V
Output current: 1A
Number of channels: 2
Tolerance: ±1%
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Mounting: SMD
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.85V; 1A; XDFN8; SMD
Operating temperature: -40...125°C
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP186x
Case: XDFN8
Type of integrated circuit: voltage regulator
Voltage drop: 0.28V
Output current: 1A
Number of channels: 2
Tolerance: ±1%
Input voltage: 1.8...5.5V
Output voltage: 1.85V
Mounting: SMD
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| 1SMA5918BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 1404 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.77 грн |
| 27+ | 15.53 грн |
| 50+ | 11.40 грн |
| 100+ | 9.95 грн |
| 250+ | 8.33 грн |
| 500+ | 7.28 грн |
| 1000+ | 6.87 грн |
| SZ1SMA5918BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 5.1V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MOC8050SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 19.59 грн |
| NCV21872DMR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Operating temperature: -40...125°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Number of channels: dual
Category: SMD operational amplifiers
Description: IC: operational amplifier; 270kHz; Micro8; 1.8÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 270kHz
Mounting: SMT
Case: Micro8
Operating temperature: -40...125°C
Voltage supply range: 1.8...5.5V DC
Kind of package: reel; tape
Input bias current: 0.4nA
Input offset current: 800pA
Input offset voltage: 0.045mV
Slew rate: 0.1V/μs
Integrated circuit features: rail-to-rail; zero-drift
Number of channels: dual
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.90 грн |
| 10+ | 42.54 грн |
| 25+ | 37.12 грн |
| 100+ | 30.49 грн |
| 250+ | 26.77 грн |
| 500+ | 26.28 грн |
| FDD2582 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 95W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 95W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 172mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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| NCP3230MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Output current: 30A
Frequency: 450...550kHz
Topology: buck
Case: QFN40
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷20.5VDC
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 4.5...20.5V DC
Output current: 30A
Frequency: 450...550kHz
Topology: buck
Case: QFN40
Type of integrated circuit: PMIC
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| NCP3235MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; QFN40; buck; 4.5÷23VDC
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output current: 15A
Number of channels: 1
Operating voltage: 4.5...23V DC
Frequency: 500...1210kHz
Topology: buck
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| NCP81274MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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| NCP81276MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 4.5...20V
Frequency: 250...1200kHz
Topology: buck
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| NCP81611MNTXG |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.8÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Input voltage: 2.8...20V
Frequency: 250...1200kHz
Topology: buck
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| NCP4200MNR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 1.7÷24V; Uout: 0.375÷1.8V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: 0.375...1.8V
Number of channels: 1
Input voltage: 1.7...24V
Frequency: 220...850kHz; 0.25...6MHz
Topology: buck
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| FDMS3669S |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 24/60A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 24/60A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±12V
On-state resistance: 14.5/7.1mΩ
Mounting: SMD
Gate charge: 24/34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS8018 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS8333L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 45.29 грн |
| 25+ | 40.43 грн |
| 100+ | 36.39 грн |
| 500+ | 34.77 грн |
| FDMS8320LDC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 192A; Idm: 300A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 192A
Pulsed drain current: 300A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86103L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; Idm: 414A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 51A
Pulsed drain current: 414A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDMS86350ET80 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 140A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 140A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FPF1504BUCX |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 1...3.6V DC
Operating temperature: -40...85°C
Integrated circuit features: output discharge
Version: ESD
Active logical level: high
Category: Power switches - integrated circuits
Description: IC: power switch; 1.5A; Ch: 1; P-Channel; SMD; WLCSP4; reel,tape
Type of integrated circuit: power switch
Output current: 1.5A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: WLCSP4
On-state resistance: 40mΩ
Kind of package: reel; tape
Supply voltage: 1...3.6V DC
Operating temperature: -40...85°C
Integrated circuit features: output discharge
Version: ESD
Active logical level: high
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| GBU4G |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Case: GBU
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| FDMT800100DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| BDV64BG |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 247.33 грн |
| 10+ | 158.50 грн |
| 30+ | 127.77 грн |
| MC78M15CDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ABDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ACDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| ESD9L5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 7793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.06 грн |
| 40+ | 10.35 грн |
| 46+ | 8.90 грн |
| 100+ | 5.09 грн |
| 400+ | 3.83 грн |
| 500+ | 3.69 грн |
| 1000+ | 3.52 грн |
| NXH020F120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020F120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020U90MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
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| FSUSB30UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
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| NCP81292MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NCP81295MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NCP81296MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NLAS323USG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
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| MC74AC05DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
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| SPS-READER-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
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| H11A1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
на замовлення 646 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.84 грн |
| 23+ | 17.79 грн |
| H11A1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Max. off-state voltage: 6V
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Manufacturer series: H11Ax
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Max. off-state voltage: 6V
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Manufacturer series: H11Ax
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| H11A1TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
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| FDMT800150DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 108nC
On-state resistance: 13mΩ
Power dissipation: 156W
Drain current: 62A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Pulsed drain current: 561A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 108nC
On-state resistance: 13mΩ
Power dissipation: 156W
Drain current: 62A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Pulsed drain current: 561A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| NRVHP820MFDT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
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| NRVHP820MFDT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
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| MC74HC03ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...6V DC
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 36.39 грн |
| MC74AC10DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Family: AC
Number of inputs: 3
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Family: AC
Number of inputs: 3
Kind of package: tube
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.77 грн |
| 10+ | 44.48 грн |
| MC7815BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.03 грн |
| 13+ | 31.13 грн |
| 25+ | 27.98 грн |
| 100+ | 24.50 грн |
| 200+ | 23.21 грн |
| 250+ | 22.80 грн |
| 500+ | 21.75 грн |


















