| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FDMT800100DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 111nC On-state resistance: 5.39mΩ Power dissipation: 156W Drain current: 102A Gate-source voltage: ±20V Drain-source voltage: 100V Pulsed drain current: 989A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
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|
BDV64BG | ONSEMI |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 125W Case: TO247-3 Mounting: THT Kind of package: tube |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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| MC78M15CDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MC78M15ABDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC78M15ACDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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ESD9L5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 5.4V Semiconductor structure: unidirectional Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 7793 шт: термін постачання 21-30 дні (днів) |
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| NXH020F120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||
| NXH020F120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM22 Topology: H-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||
| NXH020P120MNF1PG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||
| NXH020P120MNF1PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 51A Case: PIM18 Topology: MOSFET half-bridge Electrical mounting: Press-in PCB On-state resistance: 31mΩ Pulsed drain current: 102A Power dissipation: 211W Technology: SiC Gate-source voltage: -15...25V Kind of package: in-tray Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFETDescription: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Technology: SiC Mechanical mounting: screw Case: PIM20 Gate-source voltage: -8...18V On-state resistance: 10mΩ Drain current: 149A Pulsed drain current: 447A Drain-source voltage: 900V Power dissipation: 352W Topology: NTC thermistor; Vienna Rectifier Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FSUSB30UMX | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape Kind of output: DPDT Case: UMLP10 Kind of integrated circuit: USB switch Mounting: SMD Operating temperature: -40...85°C Quiescent current: 1µA Number of channels: 2 Supply voltage: 3...4.3V DC Type of integrated circuit: analog switch Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81292MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81295MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCP81296MNTXG | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C Type of integrated circuit: eFuse Output current: 50A Mounting: SMD Case: QFN32 Operating temperature: -40...125°C Supply voltage: 4.5...18V DC On-state resistance: 0.65mΩ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NLAS323USG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C Technology: CMOS Case: US8 Kind of output: SPST-NO x2 Kind of package: reel; tape Mounting: SMD Operating temperature: -55...125°C Quiescent current: 2µA Number of channels: 2 Number of inputs: 2 Supply voltage: 2...5.5V DC Type of integrated circuit: analog switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MC74AC05DR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: open drain Family: AC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SPS-READER-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323 Interface: I2C; SPI; UART Kind of connector: pin header; SMA development kits accessories features: Arduino Shield compatible |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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H11A1M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs CTR@If: 50%@10mA Turn-off time: 2µs |
на замовлення 646 шт: термін постачання 21-30 дні (днів) |
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| H11A1SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: PDIP6 Max. off-state voltage: 6V Turn-on time: 2µs CTR@If: 50%@10mA Turn-off time: 2µs Manufacturer series: H11Ax |
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В кошику од. на суму грн. | |||||||||||||||
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H11A1TVM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Collector-emitter voltage: 30V Case: DIP6 CTR@If: 20%@10mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FDMT800150DC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8 Case: DFNW8 Kind of package: reel; tape Gate charge: 108nC On-state resistance: 13mΩ Power dissipation: 156W Drain current: 62A Gate-source voltage: ±20V Drain-source voltage: 150V Pulsed drain current: 561A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVHP820MFDT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Case: DFN8 Semiconductor structure: double independent Type of diode: rectifying Kind of package: reel; tape Reverse recovery time: 50ns Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Max. off-state voltage: 200V Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NRVHP820MFDT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A Mounting: SMD Application: automotive industry Case: DFN8 Semiconductor structure: double independent Type of diode: rectifying Kind of package: reel; tape Reverse recovery time: 50ns Max. forward voltage: 1.05V Load current: 4A Max. load current: 8A Max. off-state voltage: 200V Max. forward impulse current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74HC03ADG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Technology: CMOS Case: SO14 Kind of output: open drain Family: HC Number of channels: quad; 4 Kind of package: tube Mounting: SMD Operating temperature: -55...125°C Quiescent current: 40µA Number of inputs: 2 Supply voltage: 2...6V DC |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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MC74AC10DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Number of channels: 3 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: NAND Family: AC Number of inputs: 3 Kind of package: tube |
на замовлення 63 шт: термін постачання 21-30 дні (днів) |
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| MC7815BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Output voltage: 15V Output current: 1A Number of channels: 1 |
на замовлення 788 шт: термін постачання 21-30 дні (днів) |
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| MC7815BDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape Kind of package: reel; tape Case: DPAK Mounting: SMD Output voltage: 15V Output current: 1A Number of channels: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NGTB75N65FL2WG | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 265W; TO247-3 Type of transistor: IGBT Power dissipation: 265W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 200A Collector-emitter voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MC74LCX07DTG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS; TTL Manufacturer series: LCX Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Kind of output: open drain Supply voltage: 2...3.6V DC Kind of package: tube Quiescent current: 10µA |
на замовлення 743 шт: термін постачання 21-30 дні (днів) |
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MC74LVXT4066DR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 4 Mounting: SMD Case: SO14 Supply voltage: 2...5.5V DC Quiescent current: 160µA Operating temperature: -40...85°C Technology: CMOS Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MC74AC02DG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Number of channels: quad; 4 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of gate: NOR Family: AC Number of inputs: 2 Kind of package: tube |
на замовлення 101 шт: термін постачання 21-30 дні (днів) |
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| GBPC3501 | ONSEMI |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84C3V9LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C |
на замовлення 2837 шт: термін постачання 21-30 дні (днів) |
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BZX84C30LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 3943 шт: термін постачання 21-30 дні (днів) |
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TIP121G | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 5A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SZESD5Z5.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| GRUESD5Z5.0T1G | ONSEMI |
Category: Unclassified Description: GRUESD5Z5.0T1G |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NCV8170AXV360T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT563; SMD Application: automotive industry Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Type of integrated circuit: voltage regulator Output current: 0.15A Number of channels: 1 Output voltage: 3.6V Case: SOT563 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| FODM3022-NF098 | ONSEMI |
Category: OptotriacsDescription: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube Type of optocoupler: optotriac Insulation voltage: 3.75kV Output voltage: 400V Kind of output: triac Case: MFP4 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: FODM302x Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MJW3281AG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 230V Collector current: 15A Power dissipation: 200W Case: TO247-3 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTC115TET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Case: SC75; SOT416 Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Current gain: 160...350 Quantity in set/package: 3000pcs. Base resistor: 100kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MURS480ET3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 4A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.53V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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| NCN8024DTBR2G | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: TSSOP28 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8024DWR2G | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: SO28 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 3.3...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8025MTTBG | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: QFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NCN8026AMNTXG | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape Kind of integrated circuit: card inerface Application: for smart card application Type of integrated circuit: interface Case: QFN24 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.6...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5232B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: bulk Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 5.6V Leakage current: 5µA Manufacturer series: 1N52xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 1N5232BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA Type of diode: Zener Mounting: THT Semiconductor structure: single diode Kind of package: reel; tape Case: CASE017AG Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 5.6V Leakage current: 5µA Manufacturer series: 1N52xxB |
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В кошику од. на суму грн. | |||||||||||||||
| LM2904EDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: dual Case: SO8 Operating temperature: -40...105°C Input offset voltage: 10mV Voltage supply range: 3...32V DC Kind of package: reel; tape Input offset current: 200nA |
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В кошику од. на суму грн. | |||||||||||||||
|
1N5369BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Type of diode: Zener Leakage current: 0.5µA Case: CASE017AA Kind of package: reel; tape Power dissipation: 5W Zener voltage: 51V Manufacturer series: 1N53xxB |
на замовлення 2443 шт: термін постачання 21-30 дні (днів) |
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| UJ3C120150K3S | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W Mounting: THT Type of transistor: N-JFET / N-MOSFET Polarisation: unipolar Technology: SiC Case: TO247-3 Gate-source voltage: -25...25V Gate charge: 63nC On-state resistance: 0.33Ω Drain current: 13.8A Pulsed drain current: 38A Power dissipation: 166W Drain-source voltage: 1.2kV Kind of package: tube Kind of transistor: cascode Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| NCP2890DMR2G | ONSEMI |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω Type of integrated circuit: audio amplifier Case: Micro8 Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL) Mounting: SMD Kind of package: reel; tape Output power: 1W Supply voltage: 2.5...5.5V DC Impedance: 8Ω |
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В кошику од. на суму грн. | |||||||||||||||
|
FL7760AM6X | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6 Mounting: SMD Output current: -2.5...1.5A Input voltage: 8...70V Number of channels: 1 Frequency: 1MHz Kind of integrated circuit: DC/DC converter; LED driver Application: for LED applications Topology: buck Type of integrated circuit: PMIC Case: SOT23-6 Integrated circuit features: linear dimming; PWM Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
|
FDP8860 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 556A Power dissipation: 254W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
| MJ14002G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 60A Power dissipation: 300W Case: TO3; TO204 Mounting: THT Kind of package: in-tray |
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В кошику од. на суму грн. | |||||||||||||||
| NCV47711PDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8 Kind of package: reel; tape Case: SO8 Mounting: SMD Output current: 0.35A Number of channels: 1 Output voltage: 5...20V Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| EGP10K | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 75ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Reverse recovery time: 75ns Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 0.8kV Kind of package: reel; tape Case: DO41 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
UAA2016DG | ONSEMI |
Category: Integrated circuits - othersDescription: IC: driver; AC/DC switcher; SO8; 130mA; Ch: 1; 8÷10VDC Type of integrated circuit: driver Kind of integrated circuit: AC/DC switcher Case: SO8 Output current: 130mA Number of channels: 1 Supply voltage: 8...10V DC Integrated circuit features: zero voltage switching DC supply current: 1.5mA Mounting: SMD Operating temperature: -20...85°C Application: thyristor triac trigger ciruit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
ISL9V5036S3ST | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level Type of transistor: IGBT Power dissipation: 250W Case: D2PAK Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: logic level Gate-emitter voltage: ±10V Collector current: 31A Collector-emitter voltage: 390V Version: ESD Application: ignition systems Gate charge: 32nC |
на замовлення 718 шт: термін постачання 21-30 дні (днів) |
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| FDMT800100DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 102A; Idm: 989A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 111nC
On-state resistance: 5.39mΩ
Power dissipation: 156W
Drain current: 102A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Pulsed drain current: 989A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| BDV64BG |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.45 грн |
| 10+ | 156.66 грн |
| 30+ | 126.29 грн |
| MC78M15CDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ABDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ACDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| ESD9L5.0ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 5.4V; unidirectional; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.4V
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 7793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.91 грн |
| 40+ | 10.23 грн |
| 46+ | 8.79 грн |
| 100+ | 5.03 грн |
| 400+ | 3.79 грн |
| 500+ | 3.64 грн |
| 1000+ | 3.48 грн |
| NXH020F120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020F120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM22; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM22
Topology: H-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020P120MNF1PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 51A; PIM18; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 51A
Case: PIM18
Topology: MOSFET half-bridge
Electrical mounting: Press-in PCB
On-state resistance: 31mΩ
Pulsed drain current: 102A
Power dissipation: 211W
Technology: SiC
Gate-source voltage: -15...25V
Kind of package: in-tray
Mechanical mounting: screw
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| NXH020U90MNF2PTG |
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Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM20
Gate-source voltage: -8...18V
On-state resistance: 10mΩ
Drain current: 149A
Pulsed drain current: 447A
Drain-source voltage: 900V
Power dissipation: 352W
Topology: NTC thermistor; Vienna Rectifier
Kind of package: in-tray
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| FSUSB30UMX |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; USB switch; Ch: 2; UMLP10; 3÷4.3VDC; reel,tape
Kind of output: DPDT
Case: UMLP10
Kind of integrated circuit: USB switch
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 1µA
Number of channels: 2
Supply voltage: 3...4.3V DC
Type of integrated circuit: analog switch
Kind of package: reel; tape
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| NCP81292MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NCP81295MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NCP81296MNTXG |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
Category: Power switches - integrated circuits
Description: IC: eFuse; 50A; SMD; QFN32; reel,tape; -40÷125°C
Type of integrated circuit: eFuse
Output current: 50A
Mounting: SMD
Case: QFN32
Operating temperature: -40...125°C
Supply voltage: 4.5...18V DC
On-state resistance: 0.65mΩ
Kind of package: reel; tape
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| NLAS323USG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
Category: Decoders, multiplexers, switches
Description: IC: analog switch; Ch: 2; IN: 2; CMOS; SMD; US8; 2÷5.5VDC; -55÷125°C
Technology: CMOS
Case: US8
Kind of output: SPST-NO x2
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of channels: 2
Number of inputs: 2
Supply voltage: 2...5.5V DC
Type of integrated circuit: analog switch
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| MC74AC05DR2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; AC
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: open drain
Family: AC
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| SPS-READER-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Components: NCP163; NCP3170; NCP3337; NCP5663; NLAS323
Interface: I2C; SPI; UART
Kind of connector: pin header; SMA
development kits accessories features: Arduino Shield compatible
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| H11A1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
на замовлення 646 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.43 грн |
| 23+ | 17.58 грн |
| H11A1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Max. off-state voltage: 6V
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Manufacturer series: H11Ax
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Max. off-state voltage: 6V
Turn-on time: 2µs
CTR@If: 50%@10mA
Turn-off time: 2µs
Manufacturer series: H11Ax
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| H11A1TVM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
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| FDMT800150DC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 108nC
On-state resistance: 13mΩ
Power dissipation: 156W
Drain current: 62A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Pulsed drain current: 561A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 62A; Idm: 561A; 156W; DFNW8
Case: DFNW8
Kind of package: reel; tape
Gate charge: 108nC
On-state resistance: 13mΩ
Power dissipation: 156W
Drain current: 62A
Gate-source voltage: ±20V
Drain-source voltage: 150V
Pulsed drain current: 561A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
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| NRVHP820MFDT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
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| NRVHP820MFDT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 4A; 50ns; DFN8; Ufmax: 1.05V; Ifsm: 80A
Mounting: SMD
Application: automotive industry
Case: DFN8
Semiconductor structure: double independent
Type of diode: rectifying
Kind of package: reel; tape
Reverse recovery time: 50ns
Max. forward voltage: 1.05V
Load current: 4A
Max. load current: 8A
Max. off-state voltage: 200V
Max. forward impulse current: 80A
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| MC74HC03ADG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS
Case: SO14
Kind of output: open drain
Family: HC
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...6V DC
на замовлення 11 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 35.97 грн |
| MC74AC10DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Family: AC
Number of inputs: 3
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 3; IN: 3; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: 3
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NAND
Family: AC
Number of inputs: 3
Kind of package: tube
на замовлення 63 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 48.20 грн |
| 10+ | 43.96 грн |
| MC7815BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
на замовлення 788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.48 грн |
| 13+ | 30.77 грн |
| 25+ | 27.65 грн |
| 100+ | 24.22 грн |
| 200+ | 22.94 грн |
| 250+ | 22.54 грн |
| 500+ | 21.50 грн |
| MC7815BDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Output voltage: 15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Kind of package: reel; tape
Case: DPAK
Mounting: SMD
Output voltage: 15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
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| NGTB75N65FL2WG |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
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| MC74LCX07DTG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS; TTL
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...3.6V DC
Kind of package: tube
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS; TTL
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of output: open drain
Supply voltage: 2...3.6V DC
Kind of package: tube
Quiescent current: 10µA
на замовлення 743 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.18 грн |
| 25+ | 31.33 грн |
| 96+ | 26.06 грн |
| 288+ | 23.34 грн |
| MC74LVXT4066DR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 4; SO14; 160uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 4
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Quiescent current: 160µA
Operating temperature: -40...85°C
Technology: CMOS
Kind of package: reel; tape
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| MC74AC02DG |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NOR
Family: AC
Number of inputs: 2
Kind of package: tube
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Number of channels: quad; 4
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of gate: NOR
Family: AC
Number of inputs: 2
Kind of package: tube
на замовлення 101 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.04 грн |
| 15+ | 27.97 грн |
| 25+ | 26.54 грн |
| GBPC3501 |
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Виробник: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
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| BZX84C3V9LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
на замовлення 2837 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.03 грн |
| 120+ | 3.36 грн |
| 212+ | 1.89 грн |
| 500+ | 1.37 грн |
| 1000+ | 1.21 грн |
| 2000+ | 1.20 грн |
| BZX84C30LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 3943 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.03 грн |
| 109+ | 3.68 грн |
| 158+ | 2.54 грн |
| 172+ | 2.33 грн |
| 184+ | 2.17 грн |
| 1500+ | 1.21 грн |
| TIP121G |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 5A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 5A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| SZESD5Z5.0T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| GRUESD5Z5.0T1G |
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.37 грн |
| NCV8170AXV360T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT563; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.6V
Case: SOT563
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.15A; SOT563; SMD
Application: automotive industry
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Type of integrated circuit: voltage regulator
Output current: 0.15A
Number of channels: 1
Output voltage: 3.6V
Case: SOT563
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| FODM3022-NF098 |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 400V
Kind of output: triac
Case: MFP4
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM302x
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 3.75kV; Uout: 400V; triac; MFP4; Ch: 1; FODM302x; tube
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Output voltage: 400V
Kind of output: triac
Case: MFP4
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM302x
Kind of package: tube
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| MJW3281AG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 230V; 15A; 200W; TO247-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 230V
Collector current: 15A
Power dissipation: 200W
Case: TO247-3
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| DTC115TET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC75; SOT416
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 3000pcs.
Base resistor: 100kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Case: SC75; SOT416
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 160...350
Quantity in set/package: 3000pcs.
Base resistor: 100kΩ
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| MURS480ET3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 4A; 100ns; SMC; Ufmax: 1.53V; Ifsm: 70A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 4A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.53V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 88.66 грн |
| 6+ | 70.02 грн |
| 10+ | 64.02 грн |
| 50+ | 51.87 грн |
| 100+ | 47.72 грн |
| 250+ | 42.12 грн |
| 500+ | 40.76 грн |
| NCN8024DTBR2G |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: TSSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; TSSOP28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: TSSOP28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
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| NCN8024DWR2G |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 3.3÷5.5VDC; SMD; SO28; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: SO28
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3.3...5.5V DC
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| NCN8025MTTBG |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 2.7÷5.5VDC; SMD; QFN16; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V DC
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| NCN8026AMNTXG |
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Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; card inerface; 1.6÷5.5VDC; SMD; QFN24; reel,tape
Kind of integrated circuit: card inerface
Application: for smart card application
Type of integrated circuit: interface
Case: QFN24
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.6...5.5V DC
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| 1N5232B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 5.6V
Leakage current: 5µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; bulk; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: bulk
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 5.6V
Leakage current: 5µA
Manufacturer series: 1N52xxB
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| 1N5232BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 5.6V
Leakage current: 5µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode; 5uA
Type of diode: Zener
Mounting: THT
Semiconductor structure: single diode
Kind of package: reel; tape
Case: CASE017AG
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 5.6V
Leakage current: 5µA
Manufacturer series: 1N52xxB
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| LM2904EDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; 3÷32VDC; reel,tape; 200nA; Ch: dual
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: SO8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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| 1N5369BRLG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 0.5µA
Case: CASE017AA
Kind of package: reel; tape
Power dissipation: 5W
Zener voltage: 51V
Manufacturer series: 1N53xxB
на замовлення 2443 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.49 грн |
| 30+ | 13.51 грн |
| UJ3C120150K3S |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Technology: SiC
Case: TO247-3
Gate-source voltage: -25...25V
Gate charge: 63nC
On-state resistance: 0.33Ω
Drain current: 13.8A
Pulsed drain current: 38A
Power dissipation: 166W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of transistor: cascode
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 1.2kV; 166W
Mounting: THT
Type of transistor: N-JFET / N-MOSFET
Polarisation: unipolar
Technology: SiC
Case: TO247-3
Gate-source voltage: -25...25V
Gate charge: 63nC
On-state resistance: 0.33Ω
Drain current: 13.8A
Pulsed drain current: 38A
Power dissipation: 166W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of transistor: cascode
Kind of channel: enhancement
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| NCP2890DMR2G |
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Виробник: ONSEMI
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω
Type of integrated circuit: audio amplifier
Case: Micro8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 1W
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 1W; 2.5÷5.5VDC; Micro8; 8Ω
Type of integrated circuit: audio amplifier
Case: Micro8
Integrated circuit features: mono full-bridge: Bridge Tied Load (BTL)
Mounting: SMD
Kind of package: reel; tape
Output power: 1W
Supply voltage: 2.5...5.5V DC
Impedance: 8Ω
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| FL7760AM6X |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Mounting: SMD
Output current: -2.5...1.5A
Input voltage: 8...70V
Number of channels: 1
Frequency: 1MHz
Kind of integrated circuit: DC/DC converter; LED driver
Application: for LED applications
Topology: buck
Type of integrated circuit: PMIC
Case: SOT23-6
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Mounting: SMD
Output current: -2.5...1.5A
Input voltage: 8...70V
Number of channels: 1
Frequency: 1MHz
Kind of integrated circuit: DC/DC converter; LED driver
Application: for LED applications
Topology: buck
Type of integrated circuit: PMIC
Case: SOT23-6
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
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| FDP8860 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
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| MJ14002G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 60A
Power dissipation: 300W
Case: TO3; TO204
Mounting: THT
Kind of package: in-tray
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 60A; 300W; TO204,TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 60A
Power dissipation: 300W
Case: TO3; TO204
Mounting: THT
Kind of package: in-tray
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| NCV47711PDAJR2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 5÷20V; 0.35A; SO8
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Output current: 0.35A
Number of channels: 1
Output voltage: 5...20V
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Application: automotive industry
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| EGP10K |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DO41
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.8kV
Kind of package: reel; tape
Case: DO41
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| UAA2016DG |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; SO8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: SO8
Output current: 130mA
Number of channels: 1
Supply voltage: 8...10V DC
Integrated circuit features: zero voltage switching
DC supply current: 1.5mA
Mounting: SMD
Operating temperature: -20...85°C
Application: thyristor triac trigger ciruit
Category: Integrated circuits - others
Description: IC: driver; AC/DC switcher; SO8; 130mA; Ch: 1; 8÷10VDC
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher
Case: SO8
Output current: 130mA
Number of channels: 1
Supply voltage: 8...10V DC
Integrated circuit features: zero voltage switching
DC supply current: 1.5mA
Mounting: SMD
Operating temperature: -20...85°C
Application: thyristor triac trigger ciruit
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| ISL9V5036S3ST |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate-emitter voltage: ±10V
Collector current: 31A
Collector-emitter voltage: 390V
Version: ESD
Application: ignition systems
Gate charge: 32nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; Features: logic level
Type of transistor: IGBT
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate-emitter voltage: ±10V
Collector current: 31A
Collector-emitter voltage: 390V
Version: ESD
Application: ignition systems
Gate charge: 32nC
на замовлення 718 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 344.30 грн |
| 5+ | 266.96 грн |
| 10+ | 237.38 грн |
| 50+ | 195.02 грн |















