| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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DTC114EET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Power dissipation: 0.2/0.3W Current gain: 35...60 |
на замовлення 163 шт: термін постачання 14-30 дні (днів) |
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| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Manufacturer standard package: 8000pcs. Power dissipation: 0.6W Current gain: 35...60 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTC114YM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Power dissipation: 0.6W Current gain: 80...140 |
на замовлення 5190 шт: термін постачання 14-30 дні (днів) |
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FAN3224TMX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Case: SO8 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: non-inverting Number of channels: 2 Impulse rise time: 20ns Output current: -4.3...2.8A Technology: MillerDrive™ Pulse fall time: 17ns |
на замовлення 1127 шт: термін постачання 14-30 дні (днів) |
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FAN3224CMX | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: low-side; MOSFET gate driver Technology: MillerDrive™ Case: SO8 Output current: -4.3...2.8A Number of channels: 2 Supply voltage: 4.5...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 20ns Pulse fall time: 17ns Kind of package: reel; tape Kind of output: non-inverting |
на замовлення 2488 шт: термін постачання 14-30 дні (днів) |
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4N32M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 50%@10mA Insulation voltage: 2.5kV Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 5µs |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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4N32SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Insulation voltage: 2.5kV Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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ES3J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Power dissipation: 1.66W |
на замовлення 1470 шт: термін постачання 14-30 дні (днів) |
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FQAF11N90C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.4A Power dissipation: 120W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 80nC |
на замовлення 27 шт: термін постачання 14-30 дні (днів) |
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MJL21194G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 4MHz |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FSB50450S | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Type of integrated circuit: driver Case: SPM5D-023 Mounting: SMD Operating voltage: 13.5...16.5/0...400V DC Power dissipation: 10W Number of channels: 6 Frequency: 15kHz Topology: MOSFET three-phase bridge Collector-emitter voltage: 500V Output current: 1.5A Operating temperature: -20...100°C Technology: Motion SPM® 5 Kind of integrated circuit: 3-phase motor controller; IPM |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
| FSB50550US | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Operating temperature: -40...150°C Collector-emitter voltage: 500V Output current: 2A Type of integrated circuit: driver Power dissipation: 14.5W Technology: Motion SPM® 5 Case: SPM5H-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC Topology: MOSFET three-phase bridge Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
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SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1J | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 10pF Max. forward impulse current: 30A Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Power dissipation: 1.19W Features of semiconductor devices: fast switching; glass passivated Max. off-state voltage: 0.6kV Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: DO214AC; SMA |
на замовлення 451 шт: термін постачання 14-30 дні (днів) |
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RS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Load current: 0.8A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RS1JFP | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Mounting: SMD Type of diode: rectifying Reverse recovery time: 300ns Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Load current: 1.2A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Type of diode: rectifying Reverse recovery time: 250ns Max. forward voltage: 1.3V Application: automotive industry Max. off-state voltage: 0.6kV Load current: 0.8A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 277W Gate charge: 0.37µC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 40A |
на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 259W Gate charge: 311nC Pulsed collector current: 240A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 60A |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 395W Gate charge: 399nC Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A |
на замовлення 29 шт: термін постачання 14-30 дні (днів) |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 277W Gate charge: 0.37µC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 160A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±25V Collector current: 40A |
на замовлення 21 шт: термін постачання 14-30 дні (днів) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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MC14027BDR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Trigger: negative-edge-triggered Case: SO16 Kind of integrated circuit: JK flip-flop Number of channels: 2 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital |
на замовлення 2173 шт: термін постачання 14-30 дні (днів) |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Mounting: THT Collector-emitter voltage: 160V Power dissipation: 0.9W Polarisation: bipolar Type of transistor: PNP Current gain: 160...320 Kind of package: Ammo Pack Case: TO92 Formed Frequency: 50MHz Collector current: 1A |
на замовлення 3256 шт: термін постачання 14-30 дні (днів) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Mounting: THT Collector-emitter voltage: 160V Power dissipation: 0.9W Polarisation: bipolar Type of transistor: PNP Current gain: 160...320 Kind of package: bulk Case: TO92 Frequency: 50MHz Collector current: 1A |
на замовлення 5839 шт: термін постачання 14-30 дні (днів) |
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BZX85C12-T50R | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX85C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Kind of package: tube Kind of voltage regulator: fixed; linear Mounting: THT Case: TO220AB Operating temperature: 0...125°C Output voltage: -18V Heatsink thickness: 0.508...0.61mm Output current: 1A Voltage drop: 1.3V Number of channels: 1 Tolerance: ±4% Type of integrated circuit: voltage regulator Manufacturer series: MC7900 |
на замовлення 2350 шт: термін постачання 14-30 дні (днів) |
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BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1725 шт: термін постачання 14-30 дні (днів) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 16MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 7V/μs Integrated circuit features: low noise Input offset voltage: 3.5mV Kind of package: reel; tape Voltage supply range: ± 5...18V DC; 10...36V DC |
на замовлення 680 шт: термін постачання 14-30 дні (днів) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
на замовлення 731 шт: термін постачання 14-30 дні (днів) |
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MC33035DWR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Supply voltage: 0...40V DC Output current: 0.1A Type of integrated circuit: driver Operating temperature: -40...85°C Application: universal Kind of package: reel; tape Case: SO24 Kind of integrated circuit: brushless motor controller Number of channels: 3 Operating voltage: 10...30V DC Topology: H-bridge Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC04SC | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Operating temperature: -40...85°C Kind of gate: NOT Type of integrated circuit: digital Quiescent current: 20µA Number of inputs: 1 Kind of package: tube Case: SO14 Family: AC Number of channels: hex; 6 Mounting: SMD Supply voltage: 2...6V DC |
на замовлення 269 шт: термін постачання 14-30 дні (днів) |
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MM74HCT74M | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered |
на замовлення 111 шт: термін постачання 14-30 дні (днів) |
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FCD380N60E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FCP380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCP380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 106W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 39A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FCPF380N60 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCPF380N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV70LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Number of channels: 2 Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Supply voltage: 6.5...18V DC Kind of output: inverting Protection: undervoltage UVP Output voltage: 0.8...11.2V Kind of package: tube |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP Output voltage: 0.8...11.2V |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC34151DG | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: 0...70°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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1N5404RLG | ONSEMI |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape Max. off-state voltage: 0.4kV Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: DO27 Type of diode: rectifying Mounting: THT Max. forward impulse current: 200A Max. forward voltage: 1V |
на замовлення 1127 шт: термін постачання 14-30 дні (днів) |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.8V Max. load current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCT9001 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Case: DIP8 |
на замовлення 892 шт: термін постачання 14-30 дні (днів) |
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MCT9001SD | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Collector-emitter voltage: 55V Case: PDIP8 Turn-on time: 3µs Turn-off time: 3µs Max. off-state voltage: 5V Manufacturer series: MCT9001 |
на замовлення 669 шт: термін постачання 14-30 дні (днів) |
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FQD5P20TM | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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MC74ACT161DG | ONSEMI |
Category: Counters/dividersDescription: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Number of inputs: 9 Technology: TTL Manufacturer series: ACT Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Kind of package: tube |
на замовлення 67 шт: термін постачання 14-30 дні (днів) |
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74ACT240MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of output: 3-state Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Kind of integrated circuit: buffer; inverting; line driver Technology: CMOS Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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MC74ACT157DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Operating temperature: -40...85°C Manufacturer series: ACT Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital Technology: TTL Number of inputs: 4 Kind of package: tube Case: SOIC16 Family: ACT Kind of integrated circuit: multiplexer Number of channels: 4 |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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4N33M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Mounting: THT Turn-on time: 5µs Case: DIP6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 50%@10mA Kind of output: Darlington Insulation voltage: 2.5kV Type of optocoupler: optocoupler |
на замовлення 960 шт: термін постачання 14-30 дні (днів) |
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4N33SR2M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Manufacturer series: 4N3X Mounting: SMD Turn-on time: 5µs Case: PDIP6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 500%@10mA Kind of output: Darlington Insulation voltage: 4.17kV Max. off-state voltage: 3V Type of optocoupler: optocoupler |
на замовлення 543 шт: термін постачання 14-30 дні (днів) |
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4N33SM | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V Mounting: SMD Turn-on time: 5µs Case: Gull wing 6 Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Kind of output: Darlington Insulation voltage: 7.5kV Type of optocoupler: optocoupler |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| DTC114EET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2/0.3W
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2/0.3W; SOT416; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Power dissipation: 0.2/0.3W
Current gain: 35...60
на замовлення 163 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.84 грн |
| 60+ | 6.98 грн |
| 90+ | 4.64 грн |
| 108+ | 3.86 грн |
| DTC114EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 35...60
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 35...60
товару немає в наявності
В кошику
од. на суму грн.
| DTC114YM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Power dissipation: 0.6W
Current gain: 80...140
на замовлення 5190 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 30+ | 14.29 грн |
| 34+ | 12.46 грн |
| 100+ | 6.85 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.00 грн |
| 2000+ | 3.51 грн |
| 2500+ | 3.38 грн |
| FAN3224TMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Impulse rise time: 20ns
Output current: -4.3...2.8A
Technology: MillerDrive™
Pulse fall time: 17ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: non-inverting
Number of channels: 2
Impulse rise time: 20ns
Output current: -4.3...2.8A
Technology: MillerDrive™
Pulse fall time: 17ns
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.12 грн |
| 7+ | 63.98 грн |
| 10+ | 57.34 грн |
| 25+ | 49.03 грн |
| FAN3224CMX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; MillerDrive™; SO8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Technology: MillerDrive™
Case: SO8
Output current: -4.3...2.8A
Number of channels: 2
Supply voltage: 4.5...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 20ns
Pulse fall time: 17ns
Kind of package: reel; tape
Kind of output: non-inverting
на замовлення 2488 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.60 грн |
| 5+ | 108.03 грн |
| 25+ | 98.05 грн |
| 100+ | 91.41 грн |
| 500+ | 90.58 грн |
| 4N32M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.95 грн |
| 15+ | 27.75 грн |
| 25+ | 25.26 грн |
| 50+ | 23.52 грн |
| 100+ | 21.77 грн |
| 250+ | 19.44 грн |
| 500+ | 18.28 грн |
| 4N32SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.80 грн |
| 12+ | 37.14 грн |
| 13+ | 34.15 грн |
| 25+ | 29.75 грн |
| 50+ | 27.09 грн |
| 100+ | 26.18 грн |
| ES3J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
на замовлення 1470 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.95 грн |
| 21+ | 20.28 грн |
| 23+ | 18.36 грн |
| 50+ | 15.54 грн |
| 100+ | 15.04 грн |
| FQAF11N90C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 80nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.4A
Power dissipation: 120W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 1.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 80nC
на замовлення 27 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 370.48 грн |
| 10+ | 239.32 грн |
| MJL21194G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 383.91 грн |
| 10+ | 231.84 грн |
| 25+ | 227.68 грн |
| NTMFSC011N08M7 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FSB50450S |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Type of integrated circuit: driver
Case: SPM5D-023
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Number of channels: 6
Frequency: 15kHz
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Type of integrated circuit: driver
Case: SPM5D-023
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Number of channels: 6
Frequency: 15kHz
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
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Мінімальне замовлення: 450 шт
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| FSB50550US |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
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Мінімальне замовлення: 450 шт
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| SZMMSZ5248BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| RS1J |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO214AC; SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 10pF
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Power dissipation: 1.19W
Features of semiconductor devices: fast switching; glass passivated
Max. off-state voltage: 0.6kV
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DO214AC; SMA
на замовлення 451 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.69 грн |
| 33+ | 12.88 грн |
| 41+ | 10.14 грн |
| 50+ | 8.48 грн |
| 100+ | 7.15 грн |
| 250+ | 6.73 грн |
| RS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
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| RS1JFP |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 300ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Mounting: SMD
Type of diode: rectifying
Reverse recovery time: 300ns
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Load current: 1.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| NRVHPRS1JFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Type of diode: rectifying
Reverse recovery time: 250ns
Max. forward voltage: 1.3V
Application: automotive industry
Max. off-state voltage: 0.6kV
Load current: 0.8A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
товару немає в наявності
Мінімальне замовлення: 3 шт
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| FGH40T120SMD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 633.58 грн |
| 10+ | 505.23 грн |
| FGY60T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 60A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 259W
Gate charge: 311nC
Pulsed collector current: 240A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 60A
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 643.42 грн |
| FGY75T120SQDN |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 395W
Gate charge: 399nC
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 748.12 грн |
| FGH40T120SMD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 277W
Gate charge: 0.37µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±25V
Collector current: 40A
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 870.72 грн |
| FQPF3N80C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.18 грн |
| MC14027BDR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
на замовлення 2173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 16+ | 27.09 грн |
| 18+ | 24.10 грн |
| 25+ | 20.61 грн |
| 50+ | 18.70 грн |
| 100+ | 17.37 грн |
| 200+ | 16.45 грн |
| 250+ | 16.20 грн |
| KSA1013YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 50MHz
Collector current: 1A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: Ammo Pack
Case: TO92 Formed
Frequency: 50MHz
Collector current: 1A
на замовлення 3256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.74 грн |
| 16+ | 26.42 грн |
| 50+ | 20.03 грн |
| 100+ | 17.70 грн |
| 250+ | 15.04 грн |
| 500+ | 13.21 грн |
| 1000+ | 11.55 грн |
| KSA1013YBU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO92
Frequency: 50MHz
Collector current: 1A
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Mounting: THT
Collector-emitter voltage: 160V
Power dissipation: 0.9W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 160...320
Kind of package: bulk
Case: TO92
Frequency: 50MHz
Collector current: 1A
на замовлення 5839 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.53 грн |
| 13+ | 33.40 грн |
| 15+ | 28.75 грн |
| 100+ | 17.20 грн |
| 500+ | 13.30 грн |
| BZX85C12-T50R |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX85C
Kind of package: reel; tape
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| MC7918CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Operating temperature: 0...125°C
Output voltage: -18V
Heatsink thickness: 0.508...0.61mm
Output current: 1A
Voltage drop: 1.3V
Number of channels: 1
Tolerance: ±4%
Type of integrated circuit: voltage regulator
Manufacturer series: MC7900
на замовлення 2350 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.95 грн |
| 15+ | 28.59 грн |
| 25+ | 25.84 грн |
| 50+ | 23.93 грн |
| 100+ | 22.27 грн |
| 250+ | 20.19 грн |
| 500+ | 18.86 грн |
| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| BC638TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1725 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.37 грн |
| 26+ | 16.12 грн |
| 30+ | 13.88 грн |
| 100+ | 8.12 грн |
| 200+ | 6.98 грн |
| 500+ | 5.82 грн |
| 1000+ | 5.13 грн |
| MC33079DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
Voltage supply range: ± 5...18V DC; 10...36V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 7V/μs
Integrated circuit features: low noise
Input offset voltage: 3.5mV
Kind of package: reel; tape
Voltage supply range: ± 5...18V DC; 10...36V DC
на замовлення 680 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.95 грн |
| 20+ | 20.94 грн |
| 23+ | 18.86 грн |
| 26+ | 16.37 грн |
| 50+ | 14.87 грн |
| 100+ | 13.63 грн |
| 250+ | 12.30 грн |
| 500+ | 11.63 грн |
| MC33074DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
на замовлення 731 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.06 грн |
| 12+ | 35.32 грн |
| 15+ | 28.25 грн |
| 25+ | 25.59 грн |
| MC33035DWR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Supply voltage: 0...40V DC
Output current: 0.1A
Type of integrated circuit: driver
Operating temperature: -40...85°C
Application: universal
Kind of package: reel; tape
Case: SO24
Kind of integrated circuit: brushless motor controller
Number of channels: 3
Operating voltage: 10...30V DC
Topology: H-bridge
Mounting: SMD
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од. на суму грн.
| MC33074ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074ADTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC33074DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| 74AC04SC |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Operating temperature: -40...85°C
Kind of gate: NOT
Type of integrated circuit: digital
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: AC
Number of channels: hex; 6
Mounting: SMD
Supply voltage: 2...6V DC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Operating temperature: -40...85°C
Kind of gate: NOT
Type of integrated circuit: digital
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Case: SO14
Family: AC
Number of channels: hex; 6
Mounting: SMD
Supply voltage: 2...6V DC
на замовлення 269 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.59 грн |
| 17+ | 25.26 грн |
| 25+ | 22.60 грн |
| 55+ | 20.86 грн |
| 110+ | 19.53 грн |
| MM74HCT74M |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 19+ | 22.44 грн |
| FCD380N60E |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| FCP380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCP380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| NTD280N60S5Z |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 2500 шт
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| FCPF380N60 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF380N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
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| BAV70LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Max. load current: 0.5A
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Мінімальне замовлення: 10000 шт
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| MC33151DG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Supply voltage: 6.5...18V DC
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Kind of package: tube
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.07 грн |
| 10+ | 63.15 грн |
| 25+ | 58.17 грн |
| MC33151PG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Output voltage: 0.8...11.2V
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.96 грн |
| 10+ | 64.82 грн |
| MC33151DR2G |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
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Мінімальне замовлення: 2500 шт
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| MC34151DG |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: 0...70°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 82.33 грн |
| 7+ | 63.98 грн |
| 10+ | 63.15 грн |
| 1N5404RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Max. off-state voltage: 0.4kV
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: DO27
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 200A
Max. forward voltage: 1V
на замовлення 1127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 18.79 грн |
| 27+ | 15.79 грн |
| 50+ | 12.46 грн |
| 100+ | 10.97 грн |
| 200+ | 9.64 грн |
| 500+ | 8.39 грн |
| MBRB20200CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.8V
Max. load current: 20A
Kind of package: reel; tape
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| MCT9001 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: DIP8
на замовлення 892 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 62.64 грн |
| 13+ | 33.24 грн |
| 25+ | 30.25 грн |
| 50+ | 28.17 грн |
| 100+ | 26.09 грн |
| 500+ | 21.36 грн |
| MCT9001SD |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: PDIP8
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
Manufacturer series: MCT9001
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 55V
Case: PDIP8
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 5V
Manufacturer series: MCT9001
на замовлення 669 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.22 грн |
| 10+ | 42.30 грн |
| 100+ | 35.90 грн |
| FQD5P20TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.69 грн |
| 12+ | 35.65 грн |
| 100+ | 30.91 грн |
| 500+ | 27.84 грн |
| MC74ACT161DG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Number of inputs: 9
Technology: TTL
Manufacturer series: ACT
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of package: tube
на замовлення 67 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 14+ | 30.50 грн |
| 15+ | 28.17 грн |
| 25+ | 27.34 грн |
| 48+ | 26.42 грн |
| 74ACT240MTC |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Kind of integrated circuit: buffer; inverting; line driver
Technology: CMOS
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 97.54 грн |
| 10+ | 55.67 грн |
| 25+ | 46.20 грн |
| 50+ | 40.47 грн |
| 75+ | 37.64 грн |
| MC74ACT157DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Operating temperature: -40...85°C
Manufacturer series: ACT
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.23 грн |
| 4N33M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Turn-on time: 5µs
Case: DIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Mounting: THT
Turn-on time: 5µs
Case: DIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Kind of output: Darlington
Insulation voltage: 2.5kV
Type of optocoupler: optocoupler
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.80 грн |
| 17+ | 25.26 грн |
| 25+ | 23.18 грн |
| 50+ | 21.61 грн |
| 100+ | 20.19 грн |
| 300+ | 17.78 грн |
| 500+ | 16.79 грн |
| 4N33SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Manufacturer series: 4N3X
Mounting: SMD
Turn-on time: 5µs
Case: PDIP6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 500%@10mA
Kind of output: Darlington
Insulation voltage: 4.17kV
Max. off-state voltage: 3V
Type of optocoupler: optocoupler
на замовлення 543 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 47.43 грн |
| 13+ | 34.49 грн |
| 50+ | 28.75 грн |
| 100+ | 26.26 грн |
| 200+ | 23.85 грн |
| 500+ | 20.61 грн |
| 4N33SM |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-on time: 5µs
Case: Gull wing 6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Kind of output: Darlington
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Mounting: SMD
Turn-on time: 5µs
Case: Gull wing 6
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Kind of output: Darlington
Insulation voltage: 7.5kV
Type of optocoupler: optocoupler
товару немає в наявності
Мінімальне замовлення: 1000 шт
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