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DF01S DF01S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
8+59.39 грн
11+39.56 грн
Мінімальне замовлення: 8
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NTTFS5C453NLTAG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTTFS5C453NLTWG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLWFTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTH4L013N120M3S ONSEMI nth4l013n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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NTH4L014N120M3P ONSEMI nth4l014n120m3p-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
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DTC114YM3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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NDS355AN NDS355AN ONSEMI pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1302 шт:
термін постачання 21-30 дні (днів)
11+39.59 грн
13+31.81 грн
14+28.85 грн
50+21.98 грн
100+19.50 грн
500+14.95 грн
1000+14.07 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NTHL160N120SC1 NTHL160N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NTBG160N120SC1 ONSEMI ntbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Case: D2PAK-7
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVBG160N120SC1 ONSEMI nvbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Case: D2PAK-7
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVHL160N120SC1 ONSEMI nvhl160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE96D99D9D00C7&compId=NTH4L160N120SC1.PDF?ci_sign=9e37dfc6081c0f6f095eec4143b8416a99723221 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVH4L160N120SC1 ONSEMI nvh4l160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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FGH50T65SQD-F155 FGH50T65SQD-F155 ONSEMI FGH50T65SQD.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
2+297.82 грн
3+248.57 грн
10+219.80 грн
30+198.22 грн
120+183.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MM74HCT138M MM74HCT138M ONSEMI ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: TTL
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MC74HCT138ADR2G MC74HCT138ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7C20D3&compId=MC74HCT138A-D.pdf?ci_sign=24e0ad965980d645380015945f7dcc246794ee39 Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MC74HCT138ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7D60D3&compId=MC74HCT138A-D.pdf?ci_sign=93114e4752f6e2b8e2d0491c783cc3a0d3dcaaee Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MM74HCT138MX MM74HCT138MX ONSEMI MM74HCT138-D.PDF Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: CMOS
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FDD2572 FDD2572 ONSEMI pVersion=0046&contRep=ZT&docId=E20E081D963F93F1A303005056AB0C4F&compId=FDD2572.pdf?ci_sign=4de62bdfc984f3c4cdf77b8dfb8618eba2c573f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2257 шт:
термін постачання 21-30 дні (днів)
4+134.28 грн
10+107.90 грн
25+95.11 грн
100+83.12 грн
Мінімальне замовлення: 4
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NCP1606ADR2G NCP1606ADR2G ONSEMI ncp1606-d.pdf Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MOC3051SM ONSEMI moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
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MOC3051SR2M ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
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MOC3051SR2VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
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MOC3051TVM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3051VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3081TVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SM ONSEMI moc3083m-d.pdf de93284-moc308x-100622.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SR2M ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SR2VM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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SD05T1G SD05T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF1FF36A61B820&compId=SD05T1_ser.pdf?ci_sign=24a698a831d0540511f289164fc463ae466c5046 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 10µA
на замовлення 1509 шт:
термін постачання 21-30 дні (днів)
18+24.10 грн
25+16.07 грн
50+11.35 грн
100+9.67 грн
186+5.04 грн
510+4.80 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
LMV393DMR2G ONSEMI lmv331-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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LMV393DR2G ONSEMI lmv331-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: USB
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FDP20N50 FDP20N50 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE917722DDE0259&compId=FDP20N50F.pdf?ci_sign=a100ff65280d9c978576ff5b56da658bdf745fc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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MMSZ5246BT1G MMSZ5246BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 6721 шт:
термін постачання 21-30 дні (днів)
50+8.61 грн
77+5.20 грн
86+4.69 грн
120+3.36 грн
144+2.78 грн
500+1.85 грн
1000+1.67 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
NCV78L05ABDR2G NCV78L05ABDR2G ONSEMI pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCAC997FDC841EC0CE&compId=MC78LxxA_NCV78LxxA.PDF?ci_sign=2081134fd22880fc49cc2fa8e6e279ffda5d9cf3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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MOC3022SM ONSEMI moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3022SR2VM ONSEMI moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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LM385BZ-1.2RAG LM385BZ-1.2RAG ONSEMI LM285_LM385B.PDF Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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SMUN5113DW1T1G SMUN5113DW1T1G ONSEMI dta144ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
34+11.83 грн
54+7.51 грн
68+5.91 грн
104+3.88 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
MUN5213DW1T1G MUN5213DW1T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C15BBD73C7E0CE&compId=MUN5213DW1.PDF?ci_sign=ad52f96a33a6db1128a0b04bf344a9e05d8af038 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
28+15.49 грн
42+9.67 грн
71+5.69 грн
100+4.53 грн
500+2.97 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAS21TMR6T1G ONSEMI bas21tmr6-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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FAN7601BMX ONSEMI fan7601b-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
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BDX53BG ONSEMI bdx53b-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MOC3072SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3072SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3072TVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3073SR2M ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
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MOC3073SR2VM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3073SVM ONSEMI moc3072m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
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NC7SZ373P6X NC7SZ373P6X ONSEMI NC7SZ373-D.PDF Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
20+21.52 грн
29+14.23 грн
35+11.67 грн
46+8.87 грн
100+6.07 грн
250+5.28 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
H11AA4SR2M H11AA4SR2M ONSEMI h11aa4m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Manufacturer series: H11AA
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Case: PDIP6
Kind of output: transistor
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Insulation voltage: 4.17kV
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
8+60.25 грн
11+36.93 грн
25+31.33 грн
50+30.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
H11AA4M H11AA4M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADEA0D6&compId=H11AA4M.pdf?ci_sign=0d6cf97b34845a87b0640c532da7f56176266eac Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
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MURB1620CTT4G MURB1620CTT4G ONSEMI murb1620ct-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
4+109.32 грн
10+70.34 грн
Мінімальне замовлення: 4
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NTMFS4C10NT1G ONSEMI ntmfs4c10n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ5232BLT1G MMBZ5232BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)
56+7.81 грн
85+4.72 грн
129+3.10 грн
157+2.55 грн
250+1.97 грн
500+1.64 грн
726+1.29 грн
1997+1.22 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
DTC144EM3T5G ONSEMI dtc144e-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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DF01S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33
DF01S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+59.39 грн
11+39.56 грн
Мінімальне замовлення: 8
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NTTFS5C453NLTAG nttfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTTFS5C453NLTWG nttfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLTAG nvtfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLWFTAG nvtfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTH4L013N120M3S nth4l013n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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NTH4L014N120M3P nth4l014n120m3p-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
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DTC114YM3T5G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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NDS355AN pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c
NDS355AN
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1302 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+39.59 грн
13+31.81 грн
14+28.85 грн
50+21.98 грн
100+19.50 грн
500+14.95 грн
1000+14.07 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NTHL160N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9C13DAA45B960C7&compId=NTHL160N120SC1.PDF?ci_sign=c717d8e84721511fa32e0a71bba611e3703b0361
NTHL160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NTBG160N120SC1 ntbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Case: D2PAK-7
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVBG160N120SC1 nvbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Case: D2PAK-7
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVHL160N120SC1 nvhl160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Case: TO247-3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NTH4L160N120SC1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAB9EE96D99D9D00C7&compId=NTH4L160N120SC1.PDF?ci_sign=9e37dfc6081c0f6f095eec4143b8416a99723221
NTH4L160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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NVH4L160N120SC1 nvh4l160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Technology: SiC
Kind of channel: enhancement
Type of transistor: N-MOSFET
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FGH50T65SQD-F155 FGH50T65SQD.PDF
FGH50T65SQD-F155
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+297.82 грн
3+248.57 грн
10+219.80 грн
30+198.22 грн
120+183.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MM74HCT138M ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw
MM74HCT138M
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: TTL
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MC74HCT138ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7C20D3&compId=MC74HCT138A-D.pdf?ci_sign=24e0ad965980d645380015945f7dcc246794ee39
MC74HCT138ADR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MC74HCT138ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7D60D3&compId=MC74HCT138A-D.pdf?ci_sign=93114e4752f6e2b8e2d0491c783cc3a0d3dcaaee
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MM74HCT138MX MM74HCT138-D.PDF
MM74HCT138MX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: CMOS
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FDD2572 pVersion=0046&contRep=ZT&docId=E20E081D963F93F1A303005056AB0C4F&compId=FDD2572.pdf?ci_sign=4de62bdfc984f3c4cdf77b8dfb8618eba2c573f1
FDD2572
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+134.28 грн
10+107.90 грн
25+95.11 грн
100+83.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NCP1606ADR2G ncp1606-d.pdf
NCP1606ADR2G
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Operating voltage: 9.5...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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MOC3051SM moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
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MOC3051SR2M moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
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MOC3051SR2VM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
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MOC3051TVM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3051VM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3081TVM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SM moc3083m-d.pdf de93284-moc308x-100622.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SR2M moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SR2VM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SVM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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SD05T1G pVersion=0046&contRep=ZT&docId=005056AB82531ED999CF1FF36A61B820&compId=SD05T1_ser.pdf?ci_sign=24a698a831d0540511f289164fc463ae466c5046
SD05T1G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 350W; 6.2V; 24A; unidirectional; SOD323; reel,tape; ESD
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SOD323
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 10µA
на замовлення 1509 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.10 грн
25+16.07 грн
50+11.35 грн
100+9.67 грн
186+5.04 грн
510+4.80 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
LMV393DMR2G lmv331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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LMV393DR2G lmv331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NSP2201MR6T1G nsp2201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Case: TSOP6
Application: USB
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FDP20N50 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE917722DDE0259&compId=FDP20N50F.pdf?ci_sign=a100ff65280d9c978576ff5b56da658bdf745fc2
FDP20N50
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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MMSZ5246BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5246BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 6721 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.61 грн
77+5.20 грн
86+4.69 грн
120+3.36 грн
144+2.78 грн
500+1.85 грн
1000+1.67 грн
Мінімальне замовлення: 50
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NCV78L05ABDR2G pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCAC997FDC841EC0CE&compId=MC78LxxA_NCV78LxxA.PDF?ci_sign=2081134fd22880fc49cc2fa8e6e279ffda5d9cf3
NCV78L05ABDR2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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MOC3022SM moc3023m-d.pdf de93287-moc3020_21_22_23-220622.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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MOC3022SR2VM moc3023m-d.pdf FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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LM385BZ-1.2RAG LM285_LM385B.PDF
LM385BZ-1.2RAG
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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SMUN5113DW1T1G dta144ed-d.pdf
SMUN5113DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: PNP x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
34+11.83 грн
54+7.51 грн
68+5.91 грн
104+3.88 грн
Мінімальне замовлення: 28
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MUN5213DW1T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91C15BBD73C7E0CE&compId=MUN5213DW1.PDF?ci_sign=ad52f96a33a6db1128a0b04bf344a9e05d8af038
MUN5213DW1T1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; R1: 47kΩ; R2: 47kΩ
Type of transistor: NPN x2
Case: SC70-6; SC88; SOT363
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
Current gain: 140
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 569 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.49 грн
42+9.67 грн
71+5.69 грн
100+4.53 грн
500+2.97 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAS21TMR6T1G bas21tmr6-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SC74; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: triple independent
Case: SC74
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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FAN7601BMX fan7601b-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Kind of package: reel; tape
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BDX53BG bdx53b-d.pdf
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 65W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 65W
Case: TO220AB
Mounting: THT
Kind of package: tube
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MOC3072SR2VM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3072SVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3072TVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; DIP6; Ch: 1; MOC3072M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3072M
Conform to the norm: VDE
Kind of package: tube
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MOC3073SR2M moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Kind of package: reel; tape
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MOC3073SR2VM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: reel; tape
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MOC3073SVM moc3072m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; triac; SMT6; Ch: 1; MOC3073M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3073M
Conform to the norm: VDE
Kind of package: tube
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NC7SZ373P6X NC7SZ373-D.PDF
NC7SZ373P6X
Виробник: ONSEMI
Category: Latches
Description: IC: digital; D latch; Ch: 1; 1.65÷5.5VDC; SMD; SC70-6; 7SZ; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 1
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Case: SC70-6
Manufacturer series: 7SZ
Operating temperature: -40...85°C
Kind of output: 3-state
Trigger: level-triggered
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.52 грн
29+14.23 грн
35+11.67 грн
46+8.87 грн
100+6.07 грн
250+5.28 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
H11AA4SR2M h11aa4m-d.pdf
H11AA4SR2M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Manufacturer series: H11AA
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Case: PDIP6
Kind of output: transistor
CTR@If: 100%@10mA
Collector-emitter voltage: 100V
Insulation voltage: 4.17kV
на замовлення 969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.25 грн
11+36.93 грн
25+31.33 грн
50+30.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
H11AA4M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADDC0D6&compId=H11AA1M.pdf?ci_sign=141007c1466383150c9ebc1db402e41b8bfd4cd8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C02009ADEA0D6&compId=H11AA4M.pdf?ci_sign=0d6cf97b34845a87b0640c532da7f56176266eac
H11AA4M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 100V
Case: DIP6
CTR@If: 100%@10mA
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MURB1620CTT4G murb1620ct-d.pdf
MURB1620CTT4G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 35ns; D2PAK; Ufmax: 895mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Reverse recovery time: 35ns
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Max. forward voltage: 0.895V
Max. load current: 16A
Kind of package: reel; tape
Max. forward impulse current: 100A
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.32 грн
10+70.34 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
NTMFS4C10NT1G ntmfs4c10n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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MMBZ5232BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5232BLT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: MMBZ52xxBLT1G
на замовлення 4681 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.81 грн
85+4.72 грн
129+3.10 грн
157+2.55 грн
250+1.97 грн
500+1.64 грн
726+1.29 грн
1997+1.22 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
DTC144EM3T5G dtc144e-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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