| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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4N32M | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 50%@10mA Insulation voltage: 2.5kV Kind of output: Darlington Case: DIP6 Type of optocoupler: optocoupler Mounting: THT Turn-on time: 5µs |
на замовлення 950 шт: термін постачання 14-30 дні (днів) |
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4N32SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Turn-off time: 0.1ms Number of channels: 1 Collector-emitter voltage: 30V Insulation voltage: 2.5kV Kind of output: Darlington Case: Gull wing 6 Type of optocoupler: optocoupler Mounting: SMD Turn-on time: 5µs |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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ES3J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 45ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMC Max. forward voltage: 1.7V Max. forward impulse current: 100A Kind of package: reel; tape Capacitance: 45pF Power dissipation: 1.66W |
на замовлення 5999 шт: термін постачання 14-30 дні (днів) |
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FQAF11N90C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF Technology: QFET® Drain current: 4.4A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO3PF On-state resistance: 1.1Ω Mounting: THT Power dissipation: 120W Gate charge: 80nC Polarisation: unipolar |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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MJL21194G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 16A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 4MHz |
на замовлення 213 шт: термін постачання 14-30 дні (днів) |
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NTMFSC011N08M7 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 80V Drain current: 61A Pulsed drain current: 180A Power dissipation: 31.2W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 29.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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FSB50450S | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023 Type of integrated circuit: driver Case: SPM5D-023 Mounting: SMD Operating voltage: 13.5...16.5/0...400V DC Power dissipation: 10W Number of channels: 6 Frequency: 15kHz Topology: MOSFET three-phase bridge Collector-emitter voltage: 500V Output current: 1.5A Operating temperature: -20...100°C Technology: Motion SPM® 5 Kind of integrated circuit: 3-phase motor controller; IPM |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | ||||||||||||||||
| FSB50550US | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Operating temperature: -40...150°C Collector-emitter voltage: 500V Output current: 2A Type of integrated circuit: driver Power dissipation: 14.5W Technology: Motion SPM® 5 Case: SPM5H-023 Kind of integrated circuit: 3-phase motor controller; IPM Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC Topology: MOSFET three-phase bridge Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |||||||||||||||||
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SZMMSZ5248BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1J | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1A Reverse recovery time: 250ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
на замовлення 431 шт: термін постачання 14-30 дні (днів) |
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RS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RS1JFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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NRVHPRS1JFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 250ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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FGH40T120SMD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
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FGY60T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 60A Power dissipation: 259W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 240A Mounting: THT Gate charge: 311nC Kind of package: tube |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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FGY75T120SQDN | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 395W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 399nC Kind of package: tube |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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FGH40T120SMD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 277W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 160A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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FQPF3N80C | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.9A Power dissipation: 39W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 9 шт: термін постачання 14-30 дні (днів) |
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MC14027BDR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16 Operating temperature: -40...85°C Trigger: negative-edge-triggered Case: SO16 Kind of integrated circuit: JK flip-flop Number of channels: 2 Mounting: SMD Supply voltage: 3...18V DC Type of integrated circuit: digital |
на замовлення 2173 шт: термін постачання 14-30 дні (днів) |
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KSA1013YTA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 160...320 |
на замовлення 3044 шт: термін постачання 14-30 дні (днів) |
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KSA1013YBU | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92 Mounting: THT Kind of package: bulk Frequency: 50MHz Current gain: 160...320 |
на замовлення 5635 шт: термін постачання 14-30 дні (днів) |
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BZX85C12-T50R | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: BZX85C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC7918CTG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900 Tolerance: ±4% Mounting: THT Kind of voltage regulator: fixed; linear Manufacturer series: MC7900 Output current: 1A Type of integrated circuit: voltage regulator Voltage drop: 1.3V Operating temperature: 0...125°C Heatsink thickness: 0.508...0.61mm Output voltage: -18V Kind of package: tube Case: TO220AB Number of channels: 1 |
на замовлення 2043 шт: термін постачання 14-30 дні (днів) |
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BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.8W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | ||||||||||||||||
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BC638TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz Current gain: 100...250 |
на замовлення 1225 шт: термін постачання 14-30 дні (днів) |
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MC33079DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Integrated circuit features: low noise Voltage supply range: ± 5...18V DC; 10...36V DC Kind of package: reel; tape Number of channels: quad; 4 Bandwidth: 16MHz Input offset voltage: 3.5mV Slew rate: 7V/μs Type of integrated circuit: operational amplifier |
на замовлення 2377 шт: термін постачання 14-30 дні (днів) |
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MC33074DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 3mV Kind of package: reel; tape |
на замовлення 731 шт: термін постачання 14-30 дні (днів) |
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MC33035DWR2G | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Type of integrated circuit: driver Kind of integrated circuit: brushless motor controller Case: SO24 Output current: 0.1A Number of channels: 3 Mounting: SMD Operating temperature: -40...85°C Application: universal Supply voltage: 0...40V DC Kind of package: reel; tape Operating voltage: 10...30V DC Topology: H-bridge |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33074ADR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: SO14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC33074ADTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC33074DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...22V DC; 3...44V DC Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 13V/μs Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74AC04SC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA Type of integrated circuit: digital Number of channels: hex; 6 Mounting: SMD Case: SO14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Quiescent current: 20µA Number of inputs: 1 Kind of package: tube Family: AC Kind of gate: NOT |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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MM74HCT74M | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS Mounting: SMD Case: SO14 Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 4.5...5.5V DC Manufacturer series: HCT Trigger: positive-edge-triggered |
на замовлення 111 шт: термін постачання 14-30 дні (днів) |
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FCD380N60E | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.4A Power dissipation: 106W Case: DPAK On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FCP380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 106W Case: TO220-3 On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCP380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 106W Case: TO220-3 On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NTD280N60S5Z | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W Case: DPAK On-state resistance: 0.28Ω Mounting: SMD Gate charge: 17.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 39A Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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FCPF380N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 31W Case: TO220FP On-state resistance: 0.38Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCPF380N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.2A Power dissipation: 31W Case: TO220FP On-state resistance: 0.38Ω Mounting: THT Gate charge: 34nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30.6A Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAV70LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Case: SOT23 Max. forward voltage: 1.25V Kind of package: reel; tape Power dissipation: 0.3W Max. load current: 0.5A Leakage current: 0.1mA Capacitance: 1.5pF Max. forward impulse current: 31A |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||||
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MC33151DG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 520 шт: термін постачання 14-30 дні (днів) |
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MC33151PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: inverting Protection: undervoltage UVP |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
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MC33151DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: SO8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.5...18V DC Mounting: SMD Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: reel; tape Kind of output: inverting Protection: undervoltage UVP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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MC34151DG | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Mounting: SMD Case: SO8 Output current: -1.5...1.5A Kind of output: inverting Protection: undervoltage UVP Operating temperature: 0...70°C Pulse fall time: 30ns Output voltage: 0.8...11.2V Kind of package: tube Kind of integrated circuit: MOSFET gate driver Number of channels: 2 Impulse rise time: 30ns Supply voltage: 6.5...18V DC |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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1N5404RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Kind of package: reel; tape Max. forward voltage: 1V Leakage current: 50µA |
на замовлення 1128 шт: термін постачання 14-30 дні (днів) |
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MBRB20200CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.8V Kind of package: reel; tape Max. load current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MCT9001 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Mounting: THT Collector-emitter voltage: 55V CTR@If: 50-600%@5mA Kind of output: transistor Insulation voltage: 5kV Type of optocoupler: optocoupler Case: DIP8 Number of channels: 2 |
на замовлення 892 шт: термін постачання 14-30 дні (днів) |
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MCT9001SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8 Mounting: SMD Manufacturer series: MCT9001 Collector-emitter voltage: 55V CTR@If: 50-600%@5mA Kind of output: transistor Insulation voltage: 5kV Max. off-state voltage: 5V Type of optocoupler: optocoupler Turn-on time: 3µs Case: PDIP8 Turn-off time: 3µs Number of channels: 2 |
на замовлення 669 шт: термін постачання 14-30 дні (днів) |
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FQD5P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.34A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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MC74ACT161DG | ONSEMI |
Category: Counters/dividers Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL Type of integrated circuit: digital Operating temperature: -40...85°C Technology: TTL Number of inputs: 9 Kind of package: tube Case: SOIC16 Family: ACT Kind of integrated circuit: asynchronous reset; binary counter Number of channels: 1 Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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74ACT240MTC | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: ACT Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Quiescent current: 40µA Kind of package: tube |
на замовлення 138 шт: термін постачання 14-30 дні (днів) |
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MC74ACT157DG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Type of integrated circuit: digital Operating temperature: -40...85°C Technology: TTL Number of inputs: 4 Kind of package: tube Case: SOIC16 Family: ACT Kind of integrated circuit: multiplexer Number of channels: 4 |
на замовлення 237 шт: термін постачання 14-30 дні (днів) |
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4N33M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 5µs Turn-off time: 0.1ms CTR@If: 50%@10mA |
на замовлення 895 шт: термін постачання 14-30 дні (днів) |
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4N33SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV Collector-emitter voltage: 30V Case: PDIP6 Turn-on time: 5µs Turn-off time: 0.1ms CTR@If: 500%@10mA Max. off-state voltage: 3V Manufacturer series: 4N3X |
на замовлення 433 шт: термін постачання 14-30 дні (днів) |
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4N33SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 7.5kV Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 5µs Turn-off time: 0.1ms |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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MC33172DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 2mV Slew rate: 2.1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low power Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Case: SO8 Number of channels: dual; 2 Bandwidth: 1.8MHz |
на замовлення 2123 шт: термін постачання 14-30 дні (днів) |
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MC33171DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8 Mounting: SMT Operating temperature: -40...85°C Input offset voltage: 2mV Slew rate: 2.1V/μs Type of integrated circuit: operational amplifier Integrated circuit features: low power Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Case: SO8 Number of channels: single; 1 Bandwidth: 1.8MHz |
на замовлення 605 шт: термін постачання 14-30 дні (днів) |
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MC33152PG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: MOSFET gate driver Case: DIP8 Output current: -1.5...1.5A Output voltage: 0.8...11.2V Number of channels: 2 Supply voltage: 6.1...18V DC Mounting: THT Operating temperature: -40...85°C Impulse rise time: 30ns Pulse fall time: 30ns Kind of package: tube Kind of output: non-inverting Protection: undervoltage UVP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC33164D-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Maximum output current: 50mA Active logical level: low Type of integrated circuit: supervisor circuit DC supply current: 32µA Kind of package: tube Threshold on-voltage: 4.33V Case: SO8 Kind of integrated circuit: power on reset monitor (PoR) Number of channels: 1 Kind of RESET output: open collector Supply voltage: 1...10V DC |
на замовлення 172 шт: термін постачання 14-30 дні (днів) |
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MC33164D-3G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Mounting: SMD Operating temperature: -40...125°C Maximum output current: 30mA Active logical level: low Type of integrated circuit: supervisor circuit DC supply current: 32µA Kind of package: tube Threshold on-voltage: 2.71V Case: SO8 Kind of integrated circuit: power on reset monitor (PoR) Number of channels: 1 Kind of RESET output: open collector Supply voltage: 1...10V DC |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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| 4N32M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 50%@10mA
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: DIP6
Type of optocoupler: optocoupler
Mounting: THT
Turn-on time: 5µs
на замовлення 950 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 28.01 грн |
| 25+ | 25.49 грн |
| 50+ | 23.73 грн |
| 100+ | 21.97 грн |
| 250+ | 19.62 грн |
| 500+ | 18.45 грн |
| 4N32SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Turn-off time: 0.1ms
Number of channels: 1
Collector-emitter voltage: 30V
Insulation voltage: 2.5kV
Kind of output: Darlington
Case: Gull wing 6
Type of optocoupler: optocoupler
Mounting: SMD
Turn-on time: 5µs
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.29 грн |
| 12+ | 37.49 грн |
| 13+ | 34.47 грн |
| 25+ | 30.02 грн |
| 50+ | 27.34 грн |
| 100+ | 26.42 грн |
| ES3J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 45ns; SMC; Ufmax: 1.7V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 45ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMC
Max. forward voltage: 1.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
Capacitance: 45pF
Power dissipation: 1.66W
на замовлення 5999 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 17+ | 25.66 грн |
| 19+ | 22.22 грн |
| 50+ | 16.19 грн |
| 100+ | 15.18 грн |
| FQAF11N90C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Technology: QFET®
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PF
On-state resistance: 1.1Ω
Mounting: THT
Power dissipation: 120W
Gate charge: 80nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4.4A; 120W; TO3PF
Technology: QFET®
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO3PF
On-state resistance: 1.1Ω
Mounting: THT
Power dissipation: 120W
Gate charge: 80nC
Polarisation: unipolar
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 373.91 грн |
| 10+ | 241.53 грн |
| MJL21194G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 16A; 200W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 16A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 4MHz
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 401.00 грн |
| 10+ | 246.56 грн |
| 25+ | 229.79 грн |
| NTMFSC011N08M7 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 61A; Idm: 180A; 31.2W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 61A
Pulsed drain current: 180A
Power dissipation: 31.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Gate charge: 29.3nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| FSB50450S |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Type of integrated circuit: driver
Case: SPM5D-023
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Number of channels: 6
Frequency: 15kHz
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5D-023
Type of integrated circuit: driver
Case: SPM5D-023
Mounting: SMD
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 10W
Number of channels: 6
Frequency: 15kHz
Topology: MOSFET three-phase bridge
Collector-emitter voltage: 500V
Output current: 1.5A
Operating temperature: -20...100°C
Technology: Motion SPM® 5
Kind of integrated circuit: 3-phase motor controller; IPM
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| FSB50550US |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Operating temperature: -40...150°C
Collector-emitter voltage: 500V
Output current: 2A
Type of integrated circuit: driver
Power dissipation: 14.5W
Technology: Motion SPM® 5
Case: SPM5H-023
Kind of integrated circuit: 3-phase motor controller; IPM
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Topology: MOSFET three-phase bridge
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| SZMMSZ5248BT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| RS1J |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
на замовлення 431 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 19.87 грн |
| 33+ | 13.00 грн |
| 41+ | 10.23 грн |
| 50+ | 8.55 грн |
| 100+ | 7.21 грн |
| 250+ | 6.79 грн |
| RS1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| RS1JFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| NRVHPRS1JFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 250ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 250ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| FGH40T120SMD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 643.05 грн |
| 10+ | 510.74 грн |
| FGY60T120SQDN |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 60A
Power dissipation: 259W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 311nC
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 783.94 грн |
| 4+ | 636.53 грн |
| 10+ | 602.99 грн |
| FGY75T120SQDN |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 395W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 399nC
Kind of package: tube
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 755.04 грн |
| FGH40T120SMD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 277W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 277W
Case: TO247-3
Gate-emitter voltage: ±25V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 878.78 грн |
| FQPF3N80C |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 39W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 39W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 158.05 грн |
| MC14027BDR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; SMD; SO16
Operating temperature: -40...85°C
Trigger: negative-edge-triggered
Case: SO16
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...18V DC
Type of integrated circuit: digital
на замовлення 2173 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 16+ | 27.34 грн |
| 18+ | 24.32 грн |
| 25+ | 20.80 грн |
| 50+ | 18.87 грн |
| 100+ | 17.53 грн |
| 200+ | 16.61 грн |
| 250+ | 16.35 грн |
| KSA1013YTA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 160...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 160...320
на замовлення 3044 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 45.16 грн |
| 16+ | 26.67 грн |
| 50+ | 20.21 грн |
| 100+ | 17.86 грн |
| 250+ | 15.18 грн |
| 500+ | 13.33 грн |
| 1000+ | 11.66 грн |
| KSA1013YBU |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Current gain: 160...320
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 160V; 1A; 0.9W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Current gain: 160...320
на замовлення 5635 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 46.96 грн |
| 13+ | 33.71 грн |
| 15+ | 29.02 грн |
| 100+ | 17.36 грн |
| 500+ | 13.42 грн |
| BZX85C12-T50R |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; DO41; single diode; reel,tape; BZX85C
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: BZX85C
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| MC7918CTG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -18V
Kind of package: tube
Case: TO220AB
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -18V; 1A; TO220AB; THT; MC7900
Tolerance: ±4%
Mounting: THT
Kind of voltage regulator: fixed; linear
Manufacturer series: MC7900
Output current: 1A
Type of integrated circuit: voltage regulator
Voltage drop: 1.3V
Operating temperature: 0...125°C
Heatsink thickness: 0.508...0.61mm
Output voltage: -18V
Kind of package: tube
Case: TO220AB
Number of channels: 1
на замовлення 2043 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 28.85 грн |
| 25+ | 26.08 грн |
| 50+ | 24.15 грн |
| 100+ | 22.48 грн |
| 250+ | 20.38 грн |
| 500+ | 19.04 грн |
| BC638TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 0.8W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 0.8W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| BC638TA |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Current gain: 100...250
на замовлення 1225 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.58 грн |
| 26+ | 16.27 грн |
| 30+ | 14.17 грн |
| 100+ | 8.53 грн |
| 500+ | 5.95 грн |
| 1000+ | 5.11 грн |
| MC33079DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Number of channels: quad; 4
Bandwidth: 16MHz
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; Ch: 4; ±5÷18VDC,10÷36VDC; SO14
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Integrated circuit features: low noise
Voltage supply range: ± 5...18V DC; 10...36V DC
Kind of package: reel; tape
Number of channels: quad; 4
Bandwidth: 16MHz
Input offset voltage: 3.5mV
Slew rate: 7V/μs
Type of integrated circuit: operational amplifier
на замовлення 2377 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.71 грн |
| 18+ | 23.65 грн |
| 20+ | 21.47 грн |
| 25+ | 19.04 грн |
| 100+ | 15.85 грн |
| 250+ | 13.92 грн |
| 500+ | 12.75 грн |
| 1000+ | 11.74 грн |
| MC33074DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 3mV
Kind of package: reel; tape
на замовлення 731 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.45 грн |
| 12+ | 35.64 грн |
| 15+ | 28.51 грн |
| 25+ | 25.83 грн |
| MC33035DWR2G |
|
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Supply voltage: 0...40V DC
Kind of package: reel; tape
Operating voltage: 10...30V DC
Topology: H-bridge
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Number of channels: 3
Mounting: SMD
Operating temperature: -40...85°C
Application: universal
Supply voltage: 0...40V DC
Kind of package: reel; tape
Operating voltage: 10...30V DC
Topology: H-bridge
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од. на суму грн.
| MC33074ADR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: SO14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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од. на суму грн.
| MC33074ADTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
товару немає в наявності
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од. на суму грн.
| MC33074DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 4; ±1.5÷22VDC,3÷44VDC; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 13V/μs
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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од. на суму грн.
| 74AC04SC |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Kind of gate: NOT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷6VDC; -40÷85°C; tube; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Quiescent current: 20µA
Number of inputs: 1
Kind of package: tube
Family: AC
Kind of gate: NOT
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.55 грн |
| 15+ | 28.01 грн |
| 25+ | 24.82 грн |
| 55+ | 22.31 грн |
| MM74HCT74M |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 4.5...5.5V DC
Manufacturer series: HCT
Trigger: positive-edge-triggered
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 19+ | 22.64 грн |
| FCD380N60E |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.4A; 106W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.4A
Power dissipation: 106W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
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Мінімальне замовлення: 2500 шт
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| FCP380N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
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| FCP380N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 106W
Case: TO220-3
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
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| NTD280N60S5Z |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: DPAK
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 39A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: DPAK
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 39A
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| FCPF380N60 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
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| FCPF380N60E |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Power dissipation: 31W
Case: TO220FP
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30.6A
Gate-source voltage: ±20V
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| BAV70LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.3W
Max. load current: 0.5A
Leakage current: 0.1mA
Capacitance: 1.5pF
Max. forward impulse current: 31A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Case: SOT23
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.3W
Max. load current: 0.5A
Leakage current: 0.1mA
Capacitance: 1.5pF
Max. forward impulse current: 31A
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| MC33151DG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 520 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 93.93 грн |
| 10+ | 63.74 грн |
| 25+ | 58.71 грн |
| MC33151PG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: inverting
Protection: undervoltage UVP
на замовлення 42 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.64 грн |
| 10+ | 65.41 грн |
| MC33151DR2G |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: SO8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.5...18V DC
Mounting: SMD
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: reel; tape
Kind of output: inverting
Protection: undervoltage UVP
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| MC34151DG |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Output current: -1.5...1.5A
Kind of output: inverting
Protection: undervoltage UVP
Operating temperature: 0...70°C
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Impulse rise time: 30ns
Supply voltage: 6.5...18V DC
Category: Drivers - integrated circuits
Description: IC: driver; MOSFET gate driver; SO8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Output current: -1.5...1.5A
Kind of output: inverting
Protection: undervoltage UVP
Operating temperature: 0...70°C
Pulse fall time: 30ns
Output voltage: 0.8...11.2V
Kind of package: tube
Kind of integrated circuit: MOSFET gate driver
Number of channels: 2
Impulse rise time: 30ns
Supply voltage: 6.5...18V DC
на замовлення 75 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 71.29 грн |
| 10+ | 64.58 грн |
| 1N5404RLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; Ifsm: 200A; DO27; reel,tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 200A
Case: DO27
Kind of package: reel; tape
Max. forward voltage: 1V
Leakage current: 50µA
на замовлення 1128 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.39 грн |
| 26+ | 16.61 грн |
| 50+ | 12.83 грн |
| 100+ | 11.49 грн |
| 200+ | 9.73 грн |
| 500+ | 8.22 грн |
| MBRB20200CTT4G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.8V
Kind of package: reel; tape
Max. load current: 20A
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| MCT9001 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Mounting: THT
Collector-emitter voltage: 55V
CTR@If: 50-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 2
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Mounting: THT
Collector-emitter voltage: 55V
CTR@If: 50-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 2
на замовлення 892 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 63.22 грн |
| 13+ | 33.55 грн |
| 25+ | 30.53 грн |
| 50+ | 28.43 грн |
| 100+ | 26.33 грн |
| 500+ | 21.55 грн |
| MCT9001SD |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Mounting: SMD
Manufacturer series: MCT9001
Collector-emitter voltage: 55V
CTR@If: 50-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: PDIP8
Turn-off time: 3µs
Number of channels: 2
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; PDIP8
Mounting: SMD
Manufacturer series: MCT9001
Collector-emitter voltage: 55V
CTR@If: 50-600%@5mA
Kind of output: transistor
Insulation voltage: 5kV
Max. off-state voltage: 5V
Type of optocoupler: optocoupler
Turn-on time: 3µs
Case: PDIP8
Turn-off time: 3µs
Number of channels: 2
на замовлення 669 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.83 грн |
| 10+ | 42.69 грн |
| 100+ | 36.23 грн |
| FQD5P20TM |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.34A; 45W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.34A
Power dissipation: 45W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 54.19 грн |
| 12+ | 35.98 грн |
| 100+ | 31.20 грн |
| 500+ | 28.09 грн |
| MC74ACT161DG |
|
Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 9
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Category: Counters/dividers
Description: IC: digital; asynchronous reset,binary counter; Ch: 1; IN: 9; TTL
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 9
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: asynchronous reset; binary counter
Number of channels: 1
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 14+ | 30.78 грн |
| 15+ | 28.43 грн |
| 25+ | 27.59 грн |
| 48+ | 26.67 грн |
| 74ACT240MTC |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of package: tube
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; ACT
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Kind of package: tube
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.44 грн |
| 10+ | 56.19 грн |
| 25+ | 46.63 грн |
| 50+ | 40.84 грн |
| 75+ | 37.99 грн |
| MC74ACT157DG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT; tube
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
Operating temperature: -40...85°C
Technology: TTL
Number of inputs: 4
Kind of package: tube
Case: SOIC16
Family: ACT
Kind of integrated circuit: multiplexer
Number of channels: 4
на замовлення 237 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.57 грн |
| 4N33M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 50%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 2.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 50%@10mA
на замовлення 895 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 15+ | 28.01 грн |
| 30+ | 23.65 грн |
| 50+ | 21.64 грн |
| 100+ | 19.12 грн |
| 300+ | 16.44 грн |
| 4N33SR2M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 500%@10mA
Max. off-state voltage: 3V
Manufacturer series: 4N3X
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
Collector-emitter voltage: 30V
Case: PDIP6
Turn-on time: 5µs
Turn-off time: 0.1ms
CTR@If: 500%@10mA
Max. off-state voltage: 3V
Manufacturer series: 4N3X
на замовлення 433 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 13+ | 34.89 грн |
| 100+ | 27.68 грн |
| 200+ | 25.58 грн |
| 250+ | 24.91 грн |
| 4N33SM |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 5µs
Turn-off time: 0.1ms
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MC33172DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.8MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 2; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: dual; 2
Bandwidth: 1.8MHz
на замовлення 2123 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 18+ | 23.31 грн |
| 21+ | 20.71 грн |
| 25+ | 17.95 грн |
| 50+ | 16.19 грн |
| 100+ | 14.93 грн |
| 250+ | 13.75 грн |
| 500+ | 13.08 грн |
| MC33171DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: single; 1
Bandwidth: 1.8MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.8MHz; Ch: 1; ±1.5÷22VDC,3÷44VDC; SO8
Mounting: SMT
Operating temperature: -40...85°C
Input offset voltage: 2mV
Slew rate: 2.1V/μs
Type of integrated circuit: operational amplifier
Integrated circuit features: low power
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Case: SO8
Number of channels: single; 1
Bandwidth: 1.8MHz
на замовлення 605 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| MC33152PG |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; DIP8; -1.5÷1.5A; 0.8÷11.2V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: MOSFET gate driver
Case: DIP8
Output current: -1.5...1.5A
Output voltage: 0.8...11.2V
Number of channels: 2
Supply voltage: 6.1...18V DC
Mounting: THT
Operating temperature: -40...85°C
Impulse rise time: 30ns
Pulse fall time: 30ns
Kind of package: tube
Kind of output: non-inverting
Protection: undervoltage UVP
товару немає в наявності
В кошику
од. на суму грн.
| MC33164D-5G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 4.33V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 50mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 4.33V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
на замовлення 172 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 43.35 грн |
| 15+ | 28.43 грн |
| 25+ | 25.41 грн |
| MC33164D-3G |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 30mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 2.71V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 30mA
Active logical level: low
Type of integrated circuit: supervisor circuit
DC supply current: 32µA
Kind of package: tube
Threshold on-voltage: 2.71V
Case: SO8
Kind of integrated circuit: power on reset monitor (PoR)
Number of channels: 1
Kind of RESET output: open collector
Supply voltage: 1...10V DC
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 53.29 грн |
| 13+ | 34.64 грн |
| 25+ | 30.61 грн |