| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| LM2931ADT-5.0RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| LM2931AD2T-5R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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|
LM2931AZ-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
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| LM2931D2T-5.0R4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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|
LM2931Z-5.0RPG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: Ammo Pack Number of channels: 1 |
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| FGH75T65UPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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| FGH75T65UPD-F085 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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| FGH75T65UPD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 385nC Kind of package: tube |
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| FCP260N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.26Ω Pulsed drain current: 30A Power dissipation: 90W Gate charge: 24nC |
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| FCP360N65S3R0 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 18nC |
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| NVD260N65S3T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Case: DPAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.26Ω Pulsed drain current: 30A Power dissipation: 90W Gate charge: 23.5nC |
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| NVD360N65S3T4G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Case: DPAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.36Ω Pulsed drain current: 25A Power dissipation: 83W Gate charge: 16.8nC |
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| MC33201DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC Number of channels: single; 1 Integrated circuit features: low voltage; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: -40...105°C Input offset current: 100nA Input bias current: 0.25µA Input offset voltage: 9mV Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Slew rate: 1V/μs Case: SO8 Bandwidth: 2.2MHz |
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| MC33204DTBR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC Number of channels: quad; 4 Integrated circuit features: low voltage; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: -40...105°C Input offset current: 100nA Input bias current: 0.25µA Input offset voltage: 13mV Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Slew rate: 1V/μs Case: TSSOP14 Bandwidth: 2.2MHz |
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| MC33201VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC Number of channels: single; 1 Integrated circuit features: low voltage; rail-to-rail Type of integrated circuit: operational amplifier Kind of package: reel; tape Mounting: SMT Operating temperature: -55...125°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 13mV Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Slew rate: 1V/μs Case: SO8 Bandwidth: 2.2MHz |
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| 2SA2222SG | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 10A Power dissipation: 25W Case: TO220FP Current gain: 150...450 Mounting: THT Kind of package: tube Frequency: 230MHz |
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| 2SC6144SG | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 10A Power dissipation: 25W Case: TO220FP Current gain: 200...560 Mounting: THT Kind of package: tube Frequency: 330MHz |
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|
MC79L15ABPRPG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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|
MC79L15ACPRPG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -15V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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| ISL9V3040D3ST-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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| ISL9V3040S3ST-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
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| ISL9V5045S3ST-F085C | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level Version: ESD Kind of package: reel; tape Type of transistor: IGBT Features of semiconductor devices: logic level Mounting: SMD Gate charge: 32nC Power dissipation: 300W Collector current: 43A Gate-emitter voltage: ±10V Collector-emitter voltage: 450V Application: ignition systems Case: D2PAK |
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| MC34072ADR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: dual; 2 Case: SO8 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
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| MC34072AMTTBG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; WQFN10; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: dual; 2 Case: WQFN10 Slew rate: 13V/μs Operating temperature: 0...70°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
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| MC34072VDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: dual; 2 Case: SO8 Slew rate: 13V/μs Operating temperature: -40...125°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
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| BD679AS | ONSEMI |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 4A Power dissipation: 40W Case: TO126 Mounting: THT Kind of package: bulk |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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| LM2594DADJR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; SO8; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: SO8 Mounting: SMD Kind of package: reel; tape |
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| TL331SN4T3G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| TL331SN4T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| TL331VSN4T3G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape Type of integrated circuit: comparator Kind of comparator: low-power Number of comparators: 1 Operating voltage: 2...36V Mounting: SMT Case: TSOP5 Operating temperature: -40...125°C Input offset voltage: 5mV Kind of package: reel; tape Input offset current: 5nA Input bias current: 25nA |
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| AFGY160T65SPD-B4 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 160A; 441W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 160A Power dissipation: 441W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 480A Mounting: THT Gate charge: 163nC Kind of package: tube |
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|
PN2222ATFR | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 300MHz |
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| LM337BD2TR4G | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
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| LM337BTG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: TO220AB Mounting: THT Number of channels: 1 Kind of package: tube |
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| LM337D2TR4G | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: -1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
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| MC33035DWR2G | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; brushless motor controller; SO24; 100mA Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: brushless motor controller Case: SO24 Output current: 0.1A Supply voltage: 0...40V DC Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Number of channels: 3 Operating voltage: 10...30V DC Application: universal |
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| NSVBCP53-16T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
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| NVBG025N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 75A Pulsed drain current: 284A Power dissipation: 197W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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| LM317D2TR4G | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 0.4A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| BC848CDW1T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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| NJVMJD127T4G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| NSVBC850BLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| NSVBC850CLT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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| 2SD1624S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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| 2SD1624T-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 1.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
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| NCV7808BDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV7808BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 8V Output current: 1A Case: D2PAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| MJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
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| MJD112RLG | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
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| NJVMJD112G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: tube Application: automotive industry |
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| NJVMJD112T4G | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 1.75W Case: DPAK Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| FCP110N65F | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
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| NCV4275CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.45A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| NCV4275CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.45A Case: DPAK4 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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| MMBT3904TT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| NTHL060N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 33A Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 143A Technology: SiC Gate charge: 74nC On-state resistance: 49mΩ Power dissipation: 88W |
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| NVBG060N065SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: D2PAK-7 Gate-source voltage: -5...18V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 85W |
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| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -8...22V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W |
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| NVH4L060N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W |
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| 74VHCT541AM | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Kind of package: tube Kind of output: 3-state Supply voltage: 4.5...5.5V DC Quiescent current: 40µA |
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| LM2931ADT-5.0RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931AD2T-5R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931AZ-5.0RPG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| LM2931D2T-5.0R4G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; D2PAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LM2931Z-5.0RPG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Number of channels: 1
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| FGH75T65UPD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F085 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FGH75T65UPD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 385nC
Kind of package: tube
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| FCP260N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 24nC
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| FCP360N65S3R0 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 18nC
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| NVD260N65S3T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 23.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.26Ω
Pulsed drain current: 30A
Power dissipation: 90W
Gate charge: 23.5nC
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| NVD360N65S3T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 16.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Case: DPAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.36Ω
Pulsed drain current: 25A
Power dissipation: 83W
Gate charge: 16.8nC
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| MC33201DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 9mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: SO8
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 9mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: SO8
Bandwidth: 2.2MHz
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| MC33204DTBR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: TSSOP14
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: quad; 4
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: TSSOP14
Bandwidth: 2.2MHz
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| MC33201VDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -55...125°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: SO8
Bandwidth: 2.2MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 1; ±900mVDC÷6VDC,1.8÷12VDC
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -55...125°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 13mV
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Slew rate: 1V/μs
Case: SO8
Bandwidth: 2.2MHz
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| 2SA2222SG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 10A
Power dissipation: 25W
Case: TO220FP
Current gain: 150...450
Mounting: THT
Kind of package: tube
Frequency: 230MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 10A
Power dissipation: 25W
Case: TO220FP
Current gain: 150...450
Mounting: THT
Kind of package: tube
Frequency: 230MHz
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| 2SC6144SG |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 10A
Power dissipation: 25W
Case: TO220FP
Current gain: 200...560
Mounting: THT
Kind of package: tube
Frequency: 330MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 50V; 10A; 25W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 10A
Power dissipation: 25W
Case: TO220FP
Current gain: 200...560
Mounting: THT
Kind of package: tube
Frequency: 330MHz
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| MC79L15ABPRPG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| MC79L15ACPRPG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -15V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| ISL9V3040D3ST-F085C |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V3040S3ST-F085C |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 400V; 17A; 150W; D2PAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 400V
Collector current: 17A
Power dissipation: 150W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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| ISL9V5045S3ST-F085C |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
Category: SMD IGBT transistors
Description: Transistor: IGBT; 450V; 43A; 300W; D2PAK; Features: logic level
Version: ESD
Kind of package: reel; tape
Type of transistor: IGBT
Features of semiconductor devices: logic level
Mounting: SMD
Gate charge: 32nC
Power dissipation: 300W
Collector current: 43A
Gate-emitter voltage: ±10V
Collector-emitter voltage: 450V
Application: ignition systems
Case: D2PAK
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| MC34072ADR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC34072AMTTBG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; WQFN10; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; WQFN10; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: WQFN10
Slew rate: 13V/μs
Operating temperature: 0...70°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| MC34072VDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 2; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: dual; 2
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...125°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
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| BD679AS |
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Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 4A; 40W; TO126
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 4A
Power dissipation: 40W
Case: TO126
Mounting: THT
Kind of package: bulk
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.92 грн |
| 14+ | 31.18 грн |
| 100+ | 27.10 грн |
| 250+ | 24.98 грн |
| 1000+ | 23.51 грн |
| LM2594DADJR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: SO8
Mounting: SMD
Kind of package: reel; tape
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| TL331SN4T3G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331SN4T1G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| TL331VSN4T3G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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| AFGY160T65SPD-B4 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 160A; 441W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 441W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 480A
Mounting: THT
Gate charge: 163nC
Kind of package: tube
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| PN2222ATFR |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.625W; TO92 Formed
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 300MHz
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| LM337BD2TR4G |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| LM337BTG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; TO220AB
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: TO220AB
Mounting: THT
Number of channels: 1
Kind of package: tube
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| LM337D2TR4G |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; -1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: -1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| MC33035DWR2G |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 3
Operating voltage: 10...30V DC
Application: universal
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; brushless motor controller; SO24; 100mA
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: brushless motor controller
Case: SO24
Output current: 0.1A
Supply voltage: 0...40V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Number of channels: 3
Operating voltage: 10...30V DC
Application: universal
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| NSVBCP53-16T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| NVBG025N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 75A; Idm: 284A; 197W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 75A
Pulsed drain current: 284A
Power dissipation: 197W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 164nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| LM317D2TR4G | ![]() |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.4A; D2PAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 0.4A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| BC848CDW1T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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| NJVMJD127T4G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 1.75W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| NSVBC850BLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| NSVBC850CLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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| 2SD1624S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| 2SD1624T-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 1.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 1.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
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| NCV7808BDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV7808BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 8V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 8V
Output current: 1A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MJD112T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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| MJD112RLG |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Kind of transistor: Darlington
Case: DPAK
Mounting: SMD
Type of transistor: NPN
Power dissipation: 1.75W
Collector current: 2A
Collector-emitter voltage: 100V
Polarisation: bipolar
Kind of package: reel; tape
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| NJVMJD112G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: tube
Application: automotive industry
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| NJVMJD112T4G |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 1.75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FCP110N65F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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| NCV4275CDT33RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV4275CDT50RKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; DPAK4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.45A
Case: DPAK4
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| MMBT3904TT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NTHL060N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 143A
Technology: SiC
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 143A
Technology: SiC
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
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| NVBG060N065SC1 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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| NTH4L060N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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| NVH4L060N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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| 74VHCT541AM |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Kind of package: tube
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Quiescent current: 40µA
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