| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NVBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 152W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 265A Pulsed drain current: 900A Kind of channel: enhancement Gate charge: 115nC On-state resistance: 1.8mΩ |
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2N3906TAR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 250MHz |
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2N3906TF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | ||||||||||||||||||
|
2N3906TFR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
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| LMV358MUTAG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: uDFN8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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| NSVBCP69T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
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| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDT | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQ | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| AFGHL75T65SQDC | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM1117MPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 3630 шт: термін постачання 21-30 дні (днів) |
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| SE5532AD8R2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual Integrated circuit features: low noise Case: SO8 Number of channels: dual; 2 Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz Type of integrated circuit: operational amplifier |
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В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403M3T5G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4403WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
|
MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 5451 шт: термін постачання 21-30 дні (днів) |
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| MMBT4401M3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4401WT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBT4401WT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N65FL1-F154 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
|
BC847BWT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 11380 шт: термін постачання 21-30 дні (днів) |
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| FDP025N06 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 265A Pulsed drain current: 1060A Power dissipation: 395W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhancement |
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| NTHL025N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
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| NTH4L025N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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| NVH4L025N065SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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| NVMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W Kind of channel: enhancement Case: H-PSOF8L Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Gate charge: 90.4nC On-state resistance: 4.4mΩ Power dissipation: 158W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 187A Pulsed drain current: 900A Polarisation: unipolar |
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| LM211DR2G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Operating voltage: 5...30V Mounting: SMT Case: SO8 Operating temperature: -25...85°C Input offset voltage: 3mV Kind of package: reel; tape Input offset current: 1.7nA Input bias current: 45nA |
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| MC78M15BDTRKG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| RSL10-SENSE-DB-GEVK | ONSEMI |
Category: Development kits - othersDescription: Dev.kit: evaluation Type of development kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board |
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В кошику од. на суму грн. | |||||||||||||||||||
| RSL10-SENSE-GEVK | ONSEMI |
Category: Development kits - othersDescription: Dev.kit: evaluation Type of development kit: evaluation Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTP190N65S3HF | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: TO220-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
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| MOC3023SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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| MOC3023VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 5mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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| MOC3083SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 800V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3083M Kind of package: tube |
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| BD135G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1.5A Case: TO225 Mounting: THT Power dissipation: 12.5W Current gain: 40...250 Kind of package: bulk |
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| NVMFS040N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 94A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVTFS040N10MCLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 21A Pulsed drain current: 82A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 8.6nC Kind of package: reel; tape Kind of channel: enhancement |
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| LM2574N-12G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; DIP8; THT; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: DIP8 Mounting: THT Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3041SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: reel; tape Conform to the norm: VDE Output voltage: 400V |
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| MOC3041SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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| MOC3041VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC304XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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| MC7915ACD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1 Case: D2PAK Kind of voltage regulator: fixed; linear Mounting: SMD Output voltage: -15V Output current: 1A Number of channels: 1 Type of integrated circuit: voltage regulator Kind of package: reel; tape |
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| MC7915BD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1 Case: D2PAK Kind of voltage regulator: fixed; linear Mounting: SMD Output voltage: -15V Output current: 1A Number of channels: 1 Type of integrated circuit: voltage regulator Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3061SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; reel,tape Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3061M Kind of package: reel; tape Conform to the norm: VDE |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3061SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC3061M Kind of package: tube Conform to the norm: VDE |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3061TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3061M Kind of package: tube Conform to the norm: VDE |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3061VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3061M Kind of package: tube Conform to the norm: VDE |
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|
H11L1M | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Case: DIP6 |
на замовлення 1797 шт: термін постачання 21-30 дні (днів) |
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| NCS199A3RSQT2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.2...26V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Gain: 200V/V Input offset voltage: 0.15mV Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA |
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|
MC7815ABD2TR4G | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Output voltage: 15V Output current: 1A Number of channels: 1 |
на замовлення 1498 шт: термін постачання 21-30 дні (днів) |
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PN2907ABU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
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|
PN2907ATA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
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|
PN2907ATAR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PN2907ATF | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
PN2907ATFR | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 200MHz |
на замовлення 1874 шт: термін постачання 21-30 дні (днів) |
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| MOC3021TVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3021SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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В кошику од. на суму грн. | |||||||||||||||||||
| MOC3021VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Manufacturer series: MOC302XM Kind of package: tube Conform to the norm: VDE Output voltage: 400V |
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В кошику од. на суму грн. |
| NVBLS1D7N10MCTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Kind of channel: enhancement
Gate charge: 115nC
On-state resistance: 1.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 152W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Kind of channel: enhancement
Gate charge: 115nC
On-state resistance: 1.8mΩ
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| 2N3906TAR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
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| 2N3906TF |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| 2N3906TFR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| LMV358MUTAG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| NSVBCP69T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FGHL75T65MQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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| FGHL75T65LQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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| FGHL75T65MQD |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| AFGHL75T65SQDT |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| AFGHL75T65SQ |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| AFGHL75T65SQDC |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| LM1117MPX-ADJNOPB |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 3630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.79 грн |
| 15+ | 28.33 грн |
| 17+ | 25.42 грн |
| 25+ | 22.17 грн |
| 50+ | 20.25 грн |
| 100+ | 18.67 грн |
| 250+ | 17.25 грн |
| 500+ | 16.33 грн |
| 1000+ | 15.75 грн |
| SE5532AD8R2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Type of integrated circuit: operational amplifier
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Type of integrated circuit: operational amplifier
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| MMBT4403M3T5G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT4403WT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MM3Z18VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 5451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.08 грн |
| 82+ | 5.08 грн |
| 152+ | 2.75 грн |
| 200+ | 2.08 грн |
| 500+ | 1.20 грн |
| 1000+ | 1.00 грн |
| 1500+ | 0.95 грн |
| MMBT4401M3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMBT4401WT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NSVMMBT4401WT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| FCPF380N65FL1-F154 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| BC847BWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 11380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.38 грн |
| 120+ | 3.50 грн |
| 136+ | 3.08 грн |
| 183+ | 2.28 грн |
| 205+ | 2.04 грн |
| 500+ | 1.65 грн |
| 1000+ | 1.44 грн |
| 3000+ | 1.03 грн |
| 9000+ | 0.88 грн |
| FDP025N06 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
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| NTHL025N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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| NTH4L025N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NVH4L025N065SC1 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NVMYS025N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVBLS4D0N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Kind of channel: enhancement
Case: H-PSOF8L
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
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| LM211DR2G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 5÷30V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Kind of package: reel; tape
Input offset current: 1.7nA
Input bias current: 45nA
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| MC78M15BDTRKG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| RSL10-SENSE-DB-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
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| RSL10-SENSE-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
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| NTP190N65S3HF |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: TO220-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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| MOC3023SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MOC3023VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MOC3083SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3083M
Kind of package: tube
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| BD135G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: TO225
Mounting: THT
Power dissipation: 12.5W
Current gain: 40...250
Kind of package: bulk
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| NVMFS040N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 94A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 94A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS040N10MCLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; Idm: 82A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Pulsed drain current: 82A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LM2574N-12G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; DIP8; THT; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: DIP8
Mounting: THT
Kind of package: tube
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| MOC3041SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: reel; tape
Conform to the norm: VDE
Output voltage: 400V
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| MOC3041SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MOC3041VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC304XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC304XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MC7915ACD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| MC7915BD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 1A; D2PAK; SMD; Ch: 1
Case: D2PAK
Kind of voltage regulator: fixed; linear
Mounting: SMD
Output voltage: -15V
Output current: 1A
Number of channels: 1
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
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| MOC3061SR2VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: reel; tape
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: reel; tape
Conform to the norm: VDE
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| MOC3061SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; SMT6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
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| MOC3061TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
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| MOC3061VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3061M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3061M
Kind of package: tube
Conform to the norm: VDE
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| H11L1M |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Case: DIP6
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.46 грн |
| 12+ | 37.00 грн |
| 13+ | 33.58 грн |
| 25+ | 29.58 грн |
| 50+ | 26.83 грн |
| 100+ | 24.50 грн |
| 500+ | 23.42 грн |
| NCS199A3RSQT2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
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| MC7815ABD2TR4G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
на замовлення 1498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.15 грн |
| 13+ | 33.75 грн |
| 25+ | 30.91 грн |
| 100+ | 27.00 грн |
| PN2907ABU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
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| PN2907ATA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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| PN2907ATAR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 200MHz
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| PN2907ATF |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
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| PN2907ATFR |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.8A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 200MHz
на замовлення 1874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.56 грн |
| 62+ | 6.75 грн |
| 100+ | 4.77 грн |
| 500+ | 4.01 грн |
| 1000+ | 3.58 грн |
| MOC3021TVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MOC3021SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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| MOC3021VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC302XM
Kind of package: tube
Conform to the norm: VDE
Output voltage: 400V
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