| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NSI45020JZT1G | ONSEMI |
Category: LED driversDescription: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current regulator Case: SOT223 Output current: 40mA Number of channels: 1 Mounting: SMD Operating temperature: -55...150°C Power dissipation: 1W Output voltage: 45V Input voltage: 45V Topology: boost; buck |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| LMV331SN3T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Mounting: SMT Case: TSOP5 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Delay time: 1.5µs Input bias current: 1nA Operating voltage: 2.7...5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MC74HC1G14DFT1G-F22038 | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter,Schmitt trigger; IN: 1; CMOS; SMD; SC70-5 Type of integrated circuit: digital Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Kind of output: push-pull Quiescent current: 1µA Kind of integrated circuit: inverter; Schmitt trigger |
на замовлення 159000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
1SMB5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 7364 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1SMB5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 5299 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
1SMB5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 3306 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| NRVB540MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Load current: 5A Max. forward voltage: 0.58V Max. load current: 10A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDP030N06B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NTMFD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVMFWD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVTFWS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MC74LCX07DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Supply voltage: 2...5.5V DC Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: LCX Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Number of channels: 6 Kind of output: open drain Case: SO14 |
на замовлення 2118 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MC74LCX07DG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Supply voltage: 2.3...3.6V DC Technology: CMOS; TTL Type of integrated circuit: digital Manufacturer series: LCX Kind of package: tube Kind of integrated circuit: buffer; non-inverting Mounting: SMD Operating temperature: -40...85°C Number of channels: 6 Kind of output: open drain Case: SO14 |
на замовлення 2723 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MJ21193G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Polarisation: bipolar Kind of package: in-tray Mounting: THT Type of transistor: PNP Case: TO3 Current gain: 8...75 Collector current: 16A Power dissipation: 250W Collector-emitter voltage: 250V Frequency: 4MHz |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| AFGB40T65RQDN | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 169.68W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 51nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
AFGHL40T65SPD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 134W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 134W Pulsed collector current: 120A Gate charge: 36nC |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| AFGHL40T65SQD | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 119W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: TO247-3 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 119W Pulsed collector current: 160A Gate charge: 68nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2576D2T-ADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2576D2T-005G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; tube Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MBRD835LT4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 35V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.41V Kind of package: reel; tape Max. load current: 16A |
на замовлення 561 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
74AC541MTC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
74AC541MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20 Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: TSSOP20 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
74AC541SC | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC Type of integrated circuit: digital Number of channels: 8 Mounting: SMD Case: SO20 Kind of package: tube Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Kind of output: 3-state Manufacturer series: AC Kind of integrated circuit: buffer; line driver; non-inverting |
на замовлення 119 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MC7812BDTRKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: DPAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
80SQ045NRLG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.55V Max. forward impulse current: 140A Kind of package: reel; tape |
на замовлення 1355 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBC807-25LT3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
SBC807-25WT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.46W Case: SC70; SOT323 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
ESD7551N2T5G | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Mounting: SMD Leakage current: 50nA Kind of package: reel; tape Capacitance: 0.22...0.35pF Version: ESD Peak pulse power dissipation: 0.25W Case: CASE714AB; X2DFN2 |
на замовлення 626 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
ESD9X5.0ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Peak pulse power dissipation: 0.15W Case: SOD923 |
на замовлення 6591 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMSD4148T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Max. load current: 0.5A Capacitance: 4pF Features of semiconductor devices: fast switching Power dissipation: 0.425W |
на замовлення 7633 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
MMSD4148T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 2A Capacitance: 4pF Leakage current: 5µA Power dissipation: 0.425W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SMMSD4148T1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SMMSD4148T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1V Max. forward impulse current: 1A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
NTHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 0.16Ω Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 337mΩ Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 224mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 377mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| NSP2201MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape Case: TSOP6 Type of diode: TVS array Semiconductor structure: unidirectional Application: USB Number of channels: 2 Max. off-state voltage: 5V Breakdown voltage: 6V Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3022SM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MOC3022SR2VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC302XM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
LM385BZ-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA Reference voltage: 1.235V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
NC7SZ00P5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 1.65...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 20µA |
на замовлення 2999 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 4V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 6µA Version: ESD Max. forward impulse current: 11A Peak pulse power dissipation: 0.12kW |
на замовлення 3965 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| FDP150N10 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDP150N10A-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 91W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 16.2nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TIP50G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 40W Case: TO220AB Current gain: 30...150 Mounting: THT Kind of package: tube Frequency: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MC7812BD2TG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MC7812BD2TR4G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 12V Output current: 1A Case: D2PAK Mounting: SMD Manufacturer series: MC7800 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 15.5...27V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() +1 |
FNB41060 | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26 Type of integrated circuit: driver Kind of integrated circuit: 3-phase motor controller; IPM Output current: 10A Frequency: 20kHz Number of channels: 6 Case: SPMAA-A26 Mounting: THT Operating temperature: -40...125°C Technology: Motion SPM® 45 Operating voltage: 13.5...16.5/0...400V DC Power dissipation: 32W Collector-emitter voltage: 600V Topology: IGBT three-phase bridge; NTC thermistor |
на замовлення 33 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| FFB2907A | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 0.6A; 0.3W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Current gain: 50...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDMS8025S | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Case: Power56 Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 47nC On-state resistance: 4mΩ Power dissipation: 50W Drain current: 49A Drain-source voltage: 30V Pulsed drain current: 100A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
на замовлення 6687 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| BZX84C15LT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZBZX84C15ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
MC14081BDR2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Mounting: SMD Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC Case: SO14 Type of integrated circuit: digital Kind of gate: AND Kind of package: reel; tape Technology: CMOS Number of channels: quad; 4 Family: HEF4000B |
на замовлення 2063 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| FSQ0365RLX | ONSEMI |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1.5A Output voltage: 650V Frequency: 67kHz Number of channels: 1 Case: LSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: flyback On-state resistance: 4.5Ω Power: 19W Input voltage: 85...265V |
товару немає в наявності |
В кошику од. на суму грн. |
| NSI45020JZT1G |
![]() |
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: SOT223
Output current: 40mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Power dissipation: 1W
Output voltage: 45V
Input voltage: 45V
Topology: boost; buck
Category: LED drivers
Description: IC: driver; boost,buck; current regulator; SOT223; 40mA; 45V; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: SOT223
Output current: 40mA
Number of channels: 1
Mounting: SMD
Operating temperature: -55...150°C
Power dissipation: 1W
Output voltage: 45V
Input voltage: 45V
Topology: boost; buck
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 22.40 грн |
| LMV331SN3T1G |
![]() |
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
товару немає в наявності
В кошику
од. на суму грн.
| MC74HC1G14DFT1G-F22038 |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; IN: 1; CMOS; SMD; SC70-5
Type of integrated circuit: digital
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
Category: Gates, inverters
Description: IC: digital; inverter,Schmitt trigger; IN: 1; CMOS; SMD; SC70-5
Type of integrated circuit: digital
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Kind of output: push-pull
Quiescent current: 1µA
Kind of integrated circuit: inverter; Schmitt trigger
на замовлення 159000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.44 грн |
| 1SMB5918BT3G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 7364 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.29 грн |
| 25+ | 16.64 грн |
| 31+ | 13.81 грн |
| 40+ | 10.48 грн |
| 100+ | 7.32 грн |
| 500+ | 6.65 грн |
| 1SMB5917BT3G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 5299 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.92 грн |
| 32+ | 13.14 грн |
| 37+ | 11.31 грн |
| 54+ | 7.74 грн |
| 100+ | 6.74 грн |
| 500+ | 6.49 грн |
| 1SMB5931BT3G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 3306 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.98 грн |
| 25+ | 17.14 грн |
| 30+ | 13.89 грн |
| 50+ | 8.48 грн |
| 100+ | 6.90 грн |
| 250+ | 6.57 грн |
| NRVB540MFST1G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| FDP030N06B-F102 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NTMFD030N06CT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVMFWD030N06CT1G |
![]() |
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| NVTFWS030N06CTAG |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC74LCX07DR2G |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2...5.5V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
на замовлення 2118 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.56 грн |
| 21+ | 20.55 грн |
| 25+ | 18.30 грн |
| 100+ | 15.56 грн |
| 250+ | 14.22 грн |
| 500+ | 13.31 грн |
| 1000+ | 12.64 грн |
| MC74LCX07DG |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2.3...3.6V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of package: tube
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Supply voltage: 2.3...3.6V DC
Technology: CMOS; TTL
Type of integrated circuit: digital
Manufacturer series: LCX
Kind of package: tube
Kind of integrated circuit: buffer; non-inverting
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 6
Kind of output: open drain
Case: SO14
на замовлення 2723 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.25 грн |
| 12+ | 37.43 грн |
| 25+ | 30.94 грн |
| 55+ | 26.62 грн |
| 110+ | 25.20 грн |
| MJ21193G |
![]() |
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Current gain: 8...75
Collector current: 16A
Power dissipation: 250W
Collector-emitter voltage: 250V
Frequency: 4MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Polarisation: bipolar
Kind of package: in-tray
Mounting: THT
Type of transistor: PNP
Case: TO3
Current gain: 8...75
Collector current: 16A
Power dissipation: 250W
Collector-emitter voltage: 250V
Frequency: 4MHz
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 567.06 грн |
| 2+ | 499.11 грн |
| 5+ | 450.03 грн |
| 10+ | 403.44 грн |
| 25+ | 401.78 грн |
| AFGB40T65RQDN |
![]() |
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
товару немає в наявності
В кошику
од. на суму грн.
| AFGHL40T65SPD |
![]() |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 36nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 134W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 134W
Pulsed collector current: 120A
Gate charge: 36nC
на замовлення 23 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 371.00 грн |
| 10+ | 314.44 грн |
| 20+ | 294.47 грн |
| AFGHL40T65SQD |
![]() |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 119W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 119W
Pulsed collector current: 160A
Gate charge: 68nC
товару немає в наявності
В кошику
од. на суму грн.
| LM2576D2T-ADJR4G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| LM2576D2T-005G |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRD835LT4G |
![]() |
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 561 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.65 грн |
| 11+ | 38.51 грн |
| 50+ | 31.11 грн |
| 100+ | 30.20 грн |
| 74AC541MTC |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.44 грн |
| 11+ | 40.01 грн |
| 74AC541MTCX |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 191 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.75 грн |
| 12+ | 35.69 грн |
| 25+ | 32.28 грн |
| 50+ | 30.20 грн |
| 100+ | 28.37 грн |
| 74AC541SC |
![]() |
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 119 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.00 грн |
| 13+ | 32.28 грн |
| 25+ | 26.79 грн |
| 114+ | 21.96 грн |
| MC7812BDTRKG |
![]() |
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
товару немає в наявності
В кошику
од. на суму грн.
| 80SQ045NRLG |
![]() |
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 1355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.33 грн |
| 10+ | 42.67 грн |
| 25+ | 38.68 грн |
| 50+ | 35.77 грн |
| 100+ | 33.11 грн |
| 200+ | 32.36 грн |
| BC807-25LT3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| SBC807-25LT3G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SBC807-25WT1G |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| ESD7551N2T5G |
![]() |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 626 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.54 грн |
| 47+ | 8.98 грн |
| 57+ | 7.32 грн |
| 95+ | 4.39 грн |
| 111+ | 3.77 грн |
| ESD9X5.0ST5G |
![]() |
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 6591 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.17 грн |
| 93+ | 4.49 грн |
| 133+ | 3.13 грн |
| 157+ | 2.66 грн |
| 250+ | 2.16 грн |
| 500+ | 1.86 грн |
| 1000+ | 1.60 грн |
| 2000+ | 1.56 грн |
| MMSD4148T1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
на замовлення 7633 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.48 грн |
| 209+ | 2.00 грн |
| 218+ | 1.91 грн |
| 243+ | 1.71 грн |
| 258+ | 1.61 грн |
| 278+ | 1.50 грн |
| 500+ | 1.41 грн |
| 1000+ | 1.31 грн |
| 1500+ | 1.26 грн |
| MMSD4148T3G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
товару немає в наявності
В кошику
од. на суму грн.
| SMMSD4148T1G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SMMSD4148T3G |
![]() |
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| NTHL160N120SC1 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
товару немає в наявності
В кошику
од. на суму грн.
| NTBG160N120SC1 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
товару немає в наявності
В кошику
од. на суму грн.
| NVBG160N120SC1 |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
товару немає в наявності
В кошику
од. на суму грн.
| NVHL160N120SC1 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
товару немає в наявності
В кошику
од. на суму грн.
| NTH4L160N120SC1 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
товару немає в наявності
В кошику
од. на суму грн.
| NVH4L160N120SC1 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
товару немає в наявності
В кошику
од. на суму грн.
| FGH50T65SQD-F155 |
![]() |
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 81 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 309.96 грн |
| 3+ | 258.70 грн |
| 10+ | 228.76 грн |
| 30+ | 206.30 грн |
| NSP2201MR6T1G |
![]() |
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
| MOC3022SM |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
товару немає в наявності
В кошику
од. на суму грн.
| MOC3022SR2VM |
![]() |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
товару немає в наявності
В кошику
од. на суму грн.
| LM385BZ-1.2RAG |
![]() |
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
товару немає в наявності
В кошику
од. на суму грн.
| NC7SZ00P5X |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; SMD; SC70-5; 1.65÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
на замовлення 2999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.96 грн |
| 91+ | 4.58 грн |
| 125+ | 3.34 грн |
| 250+ | 2.89 грн |
| 500+ | 2.39 грн |
| 1000+ | 2.14 грн |
| ESD5Z2.5T1G |
![]() |
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 6µA
Version: ESD
Max. forward impulse current: 11A
Peak pulse power dissipation: 0.12kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 6µA
Version: ESD
Max. forward impulse current: 11A
Peak pulse power dissipation: 0.12kW
на замовлення 3965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.96 грн |
| 61+ | 6.82 грн |
| 88+ | 4.74 грн |
| 207+ | 2.01 грн |
| 500+ | 1.87 грн |
| 3000+ | 1.64 грн |
| FDP150N10 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| FDP150N10A-F102 |
![]() |
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| TIP50G |
![]() |
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
товару немає в наявності
В кошику
од. на суму грн.
| MC7812BD2TG |
![]() |
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
товару немає в наявності
В кошику
од. на суму грн.
| MC7812BD2TR4G |
![]() |
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; D2PAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: D2PAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
товару немає в наявності
В кошику
од. на суму грн.
| FNB41060 |
![]() |
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 10A
Frequency: 20kHz
Number of channels: 6
Case: SPMAA-A26
Mounting: THT
Operating temperature: -40...125°C
Technology: Motion SPM® 45
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 32W
Collector-emitter voltage: 600V
Topology: IGBT three-phase bridge; NTC thermistor
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Output current: 10A
Frequency: 20kHz
Number of channels: 6
Case: SPMAA-A26
Mounting: THT
Operating temperature: -40...125°C
Technology: Motion SPM® 45
Operating voltage: 13.5...16.5/0...400V DC
Power dissipation: 32W
Collector-emitter voltage: 600V
Topology: IGBT three-phase bridge; NTC thermistor
на замовлення 33 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1263.12 грн |
| 3+ | 1128.81 грн |
| FFB2907A |
![]() |
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 0.6A; 0.3W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Current gain: 50...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
| FDMS8025S |
![]() |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: Power56
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 47nC
On-state resistance: 4mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 30V
Pulsed drain current: 100A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SZBZX84C15LT1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 6687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.38 грн |
| 129+ | 3.24 грн |
| 214+ | 1.95 грн |
| 237+ | 1.76 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.41 грн |
| 3000+ | 1.36 грн |
| BZX84C15LT3G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
товару немає в наявності
В кошику
од. на суму грн.
| SZBZX84C15ET1G |
![]() |
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MC14081BDR2G |
![]() |
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Mounting: SMD
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Type of integrated circuit: digital
Kind of gate: AND
Kind of package: reel; tape
Technology: CMOS
Number of channels: quad; 4
Family: HEF4000B
на замовлення 2063 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.88 грн |
| 25+ | 17.14 грн |
| 28+ | 15.39 грн |
| 100+ | 13.31 грн |
| 250+ | 12.23 грн |
| 500+ | 11.56 грн |
| 1000+ | 10.90 грн |
| FSQ0365RLX |
![]() |
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1.5A; 650V; 67kHz; Ch: 1; LSOP8; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1.5A
Output voltage: 650V
Frequency: 67kHz
Number of channels: 1
Case: LSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: flyback
On-state resistance: 4.5Ω
Power: 19W
Input voltage: 85...265V
товару немає в наявності
В кошику
од. на суму грн.
























