| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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NTHL160N120SC1 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 0.16Ω Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
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| NTBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
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| NVBG160N120SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...15V Gate charge: 33.8nC On-state resistance: 0.365Ω Drain current: 13.7A Power dissipation: 68W Pulsed drain current: 78A Drain-source voltage: 1.2kV Case: D2PAK-7 |
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| NVHL160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 337mΩ Drain current: 12A Power dissipation: 59W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-3 |
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NTH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -15...25V Gate charge: 34nC On-state resistance: 224mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
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| NVH4L160N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W Type of transistor: N-MOSFET Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 34nC On-state resistance: 377mΩ Drain current: 12.3A Power dissipation: 55.5W Pulsed drain current: 69A Drain-source voltage: 1.2kV Case: TO247-4 |
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FGH50T65SQD-F155 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3 Mounting: THT Case: TO247-3 Type of transistor: IGBT Gate-emitter voltage: ±20V Collector current: 50A Power dissipation: 134W Pulsed collector current: 200A Kind of package: tube Collector-emitter voltage: 650V Gate charge: 99nC Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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| MOC3022SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
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| MOC3022SR2VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: reel; tape Output voltage: 400V Manufacturer series: MOC302XM |
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LM385BZ-1.2RAG | ONSEMI |
Category: Reference voltage sources - circuits Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA Type of integrated circuit: voltage reference source Tolerance: ±1% Mounting: THT Case: TO92 Operating temperature: 0...70°C Kind of package: reel; tape Maximum output current: 20mA Reference voltage: 1.235V |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 4V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 6µA Version: ESD Max. forward impulse current: 11A Peak pulse power dissipation: 0.12kW |
на замовлення 3965 шт: термін постачання 21-30 дні (днів) |
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| FDP150N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 228A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 53nC Kind of package: tube Kind of channel: enhancement |
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| FDP150N10A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 200A Power dissipation: 91W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 16.2nC Kind of package: tube Kind of channel: enhancement |
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| TIP50G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 40W Case: TO220AB Current gain: 30...150 Mounting: THT Kind of package: tube Frequency: 10MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
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SZBZX84C15LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C Application: automotive industry |
на замовлення 6687 шт: термін постачання 21-30 дні (днів) |
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| BZX84C15LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
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| SZBZX84C15ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 15V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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MC14081BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Kind of package: reel; tape Kind of gate: AND Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Case: SO14 Mounting: SMD Number of channels: quad; 4 Operating temperature: -55...125°C Delay time: 130ns Number of inputs: 2 Supply voltage: 3...18V DC |
на замовлення 2053 шт: термін постачання 21-30 дні (днів) |
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NSR0240V2T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 2A Kind of package: reel; tape Application: automotive industry |
на замовлення 234 шт: термін постачання 21-30 дні (днів) |
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MC14007UBDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: tube Technology: CMOS Kind of gate: combination; NOT Kind of integrated circuit: complementary pair Type of integrated circuit: digital Number of channels: dual; 2 Mounting: SMD Case: SO14 Quiescent current: 30µA |
на замовлення 124 шт: термін постачання 21-30 дні (днів) |
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1N914 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: bulk Leakage current: 50µA Capacitance: 4pF |
на замовлення 9604 шт: термін постачання 21-30 дні (днів) |
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| NCV896530MWATXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; VFDFN10; SMD; reel,tape Kind of integrated circuit: DC/DC converter Kind of package: reel; tape Mounting: SMD Case: VFDFN10 Application: automotive industry Type of integrated circuit: PMIC |
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В кошику од. на суму грн. | |||||||||||||||||||
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FDA24N50F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 270W Case: TO3PN On-state resistance: 0.2Ω Mounting: THT Gate charge: 85nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 96A |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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MC14007UBDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Technology: CMOS Kind of gate: combination; NOT Kind of integrated circuit: complementary pair Type of integrated circuit: digital Number of channels: dual; 2 Mounting: SMD Case: SO14 Quiescent current: 30µA |
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В кошику од. на суму грн. | ||||||||||||||||||
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MBR130LSFT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.3V Max. forward impulse current: 40A Kind of package: reel; tape Max. load current: 2A |
на замовлення 1819 шт: термін постачання 21-30 дні (днів) |
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| NJL0302DG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP + diode; bipolar; 260V; 15A; 180W; TO264-5 Type of transistor: PNP + diode Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 180W Case: TO264-5 Pulsed collector current: 25A Current gain: 75...150 Mounting: THT Kind of package: tube Frequency: 30MHz |
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GBU4G | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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| MC78M15CDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MC78M15ABDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MC78M15ACDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| NXH020U90MNF2PTG | ONSEMI |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 900V Drain current: 149A Case: PIM20 Topology: NTC thermistor; Vienna Rectifier Electrical mounting: Press-in PCB On-state resistance: 10mΩ Pulsed drain current: 447A Power dissipation: 352W Technology: SiC Gate-source voltage: -8...18V Kind of package: in-tray Mechanical mounting: screw |
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| MC7815BD2TR4G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape Kind of package: reel; tape Mounting: SMD Case: D2PAK Kind of voltage regulator: fixed; linear Type of integrated circuit: voltage regulator Output voltage: 15V Output current: 1A Number of channels: 1 |
на замовлення 688 шт: термін постачання 21-30 дні (днів) |
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| NGTB75N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3 Type of transistor: IGBT Power dissipation: 265W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 75A Pulsed collector current: 200A Collector-emitter voltage: 650V |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZESD5Z5.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 5V Breakdown voltage: 6.2V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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1N5369BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N53xxB Leakage current: 0.5µA |
на замовлення 2143 шт: термін постачання 21-30 дні (днів) |
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FDP8860 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Pulsed drain current: 556A Power dissipation: 254W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.8mΩ Mounting: THT Gate charge: 222nC Kind of package: tube Kind of channel: enhancement |
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MUR4100ERLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 70A Case: CASE267-05 Max. forward voltage: 1.85V Reverse recovery time: 75ns |
на замовлення 609 шт: термін постачання 21-30 дні (днів) |
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| FDP047N08 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 164A Pulsed drain current: 656A Power dissipation: 268W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.7mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
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MC33179DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14 Mounting: SMT Operating temperature: -40...85°C Integrated circuit features: low power Input offset voltage: 4mV Voltage supply range: ± 2...18V DC; 4...36V DC Slew rate: 2V/μs Bandwidth: 5MHz Kind of package: reel; tape Case: SO14 Type of integrated circuit: operational amplifier Number of channels: quad; 4 |
на замовлення 2458 шт: термін постачання 21-30 дні (днів) |
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NCP1654BD65R2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -1.5...1.5A Mounting: SMD Operating voltage: 9...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
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NCP1654BD200R2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost Type of integrated circuit: PMIC Output current: -1.5...1.5A Mounting: SMD Operating voltage: 9...20V DC Number of channels: 1 Operating temperature: -40...125°C Case: SO8 Topology: boost |
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1N4743ATR | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
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1N4743A | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 13V Kind of package: bulk Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N47xxA |
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| LP2951CD-3.0R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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FXL4TD245BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Number of channels: 4 Case: DQFN16 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...85°C Supply voltage: 1.1...3.6V DC Number of outputs: 4 Number of inputs: 4 |
на замовлення 1995 шт: термін постачання 21-30 дні (днів) |
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SZMM3Z18VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NCP1294EDBR2G | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 260kHz÷1MHz; Ch: 1 Output current: 1A Mounting: SMD Case: TSSOP16 Type of integrated circuit: PMIC Operating temperature: -40...125°C Number of channels: 1 Operating voltage: 3...15V DC Frequency: 260kHz...1MHz Kind of integrated circuit: AC/DC switcher; PWM controller Topology: boost; flyback |
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В кошику од. на суму грн. | |||||||||||||||||||
 |
FDPF55N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 34.8A Pulsed drain current: 220A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MC74HC1G04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Delay time: 7ns Number of inputs: 1 |
на замовлення 2030 шт: термін постачання 21-30 дні (днів) |
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NC7SZ175P6X | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC70-6 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ |
на замовлення 2663 шт: термін постачання 21-30 дні (днів) |
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BZX84C10LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 0.2µA |
на замовлення 2924 шт: термін постачання 21-30 дні (днів) |
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| 1N5369BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 51V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MMSZ4702T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG Leakage current: 50nA |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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MOC3052M | ONSEMI |
Category: Optotriacs Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M Type of optocoupler: optotriac Insulation voltage: 5.3kV Kind of output: without zero voltage crossing driver Case: DIP6 Trigger current: 10mA Mounting: THT Output voltage: 600V Manufacturer series: MOC3052M |
на замовлення 52 шт: термін постачання 21-30 дні (днів) |
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SBAV99LT3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 50µA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 8990 шт: термін постачання 21-30 дні (днів) |
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LM2575T-3.3G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 3.3V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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| NVTFS003N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 103A Pulsed drain current: 484A Power dissipation: 22W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
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4N35M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Mounting: THT Kind of output: transistor Turn-on time: 2µs Turn-off time: 2µs Number of channels: 1 Collector-emitter voltage: 30V CTR@If: 100%@10mA Insulation voltage: 7.5kV Case: DIP6 Type of optocoupler: optocoupler |
на замовлення 787 шт: термін постачання 21-30 дні (днів) |
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| NTB190N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Case: D2PAK Gate-source voltage: ±30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 34nC Power dissipation: 162W Pulsed drain current: 50A |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCP190N65F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.6A Case: TO220-3 Gate-source voltage: ±20V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 0.19Ω Gate charge: 60nC Power dissipation: 208W Pulsed drain current: 61.8A |
товару немає в наявності |
В кошику од. на суму грн. |
| NTHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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| NTBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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| NVBG160N120SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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| NVHL160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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| NTH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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од. на суму грн.
| NVH4L160N120SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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| FGH50T65SQD-F155 |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 73 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 307.02 грн |
| 3+ | 256.25 грн |
| 10+ | 226.59 грн |
| 30+ | 204.34 грн |
| MOC3022SM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
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| MOC3022SR2VM |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Output voltage: 400V
Manufacturer series: MOC302XM
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| LM385BZ-1.2RAG |
|
Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 1.235V; ±1%; TO92; reel,tape; 20mA
Type of integrated circuit: voltage reference source
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: 0...70°C
Kind of package: reel; tape
Maximum output current: 20mA
Reference voltage: 1.235V
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| ESD5Z2.5T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 6µA
Version: ESD
Max. forward impulse current: 11A
Peak pulse power dissipation: 0.12kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 6µA
Version: ESD
Max. forward impulse current: 11A
Peak pulse power dissipation: 0.12kW
на замовлення 3965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 61+ | 6.76 грн |
| 88+ | 4.70 грн |
| 207+ | 1.99 грн |
| 500+ | 1.85 грн |
| 3000+ | 1.62 грн |
| FDP150N10 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 228A; 110W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 228A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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| FDP150N10A-F102 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; Idm: 200A; 91W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 91W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 16.2nC
Kind of package: tube
Kind of channel: enhancement
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| TIP50G |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
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| SZBZX84C15LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 6687 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.32 грн |
| 129+ | 3.21 грн |
| 214+ | 1.93 грн |
| 237+ | 1.74 грн |
| 500+ | 1.61 грн |
| 1000+ | 1.39 грн |
| 3000+ | 1.35 грн |
| BZX84C15LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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| SZBZX84C15ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| MC14081BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: reel; tape
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Kind of package: reel; tape
Kind of gate: AND
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Case: SO14
Mounting: SMD
Number of channels: quad; 4
Operating temperature: -55...125°C
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
на замовлення 2053 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.51 грн |
| 22+ | 18.95 грн |
| 25+ | 16.89 грн |
| 100+ | 14.25 грн |
| 250+ | 12.77 грн |
| 500+ | 11.70 грн |
| 1000+ | 10.71 грн |
| NSR0240V2T1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 0.25A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
на замовлення 234 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.52 грн |
| 34+ | 12.19 грн |
| 100+ | 7.98 грн |
| MC14007UBDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Technology: CMOS
Kind of gate: combination; NOT
Kind of integrated circuit: complementary pair
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Case: SO14
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Technology: CMOS
Kind of gate: combination; NOT
Kind of integrated circuit: complementary pair
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Case: SO14
Quiescent current: 30µA
на замовлення 124 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.83 грн |
| 16+ | 26.86 грн |
| 55+ | 23.65 грн |
| 110+ | 19.69 грн |
| 1N914 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
на замовлення 9604 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.21 грн |
| 148+ | 2.80 грн |
| 261+ | 1.58 грн |
| 500+ | 1.10 грн |
| 1000+ | 0.96 грн |
| 2000+ | 0.83 грн |
| 5000+ | 0.73 грн |
| NCV896530MWATXG |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; VFDFN10; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Case: VFDFN10
Application: automotive industry
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; VFDFN10; SMD; reel,tape
Kind of integrated circuit: DC/DC converter
Kind of package: reel; tape
Mounting: SMD
Case: VFDFN10
Application: automotive industry
Type of integrated circuit: PMIC
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| FDA24N50F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 96A; 270W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 270W
Case: TO3PN
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 96A
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 235.15 грн |
| 30+ | 196.10 грн |
| MC14007UBDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Kind of gate: combination; NOT
Kind of integrated circuit: complementary pair
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Case: SO14
Quiescent current: 30µA
Category: Gates, inverters
Description: IC: digital; complementary pair; combination,NOT; Ch: 2; CMOS; SMD
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Technology: CMOS
Kind of gate: combination; NOT
Kind of integrated circuit: complementary pair
Type of integrated circuit: digital
Number of channels: dual; 2
Mounting: SMD
Case: SO14
Quiescent current: 30µA
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| MBR130LSFT1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 40A
Kind of package: reel; tape
Max. load current: 2A
на замовлення 1819 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.96 грн |
| 25+ | 16.48 грн |
| 50+ | 13.18 грн |
| 100+ | 11.87 грн |
| 500+ | 8.98 грн |
| 1000+ | 8.32 грн |
| NJL0302DG |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 180W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 180W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 180W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 75...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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| GBU4G |
|
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| MC78M15CDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ABDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MC78M15ACDTRKG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| NXH020U90MNF2PTG |
|
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 900V; 149A; PIM20; Press-in PCB; 352W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 900V
Drain current: 149A
Case: PIM20
Topology: NTC thermistor; Vienna Rectifier
Electrical mounting: Press-in PCB
On-state resistance: 10mΩ
Pulsed drain current: 447A
Power dissipation: 352W
Technology: SiC
Gate-source voltage: -8...18V
Kind of package: in-tray
Mechanical mounting: screw
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| MC7815BD2TR4G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; D2PAK; SMD; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: D2PAK
Kind of voltage regulator: fixed; linear
Type of integrated circuit: voltage regulator
Output voltage: 15V
Output current: 1A
Number of channels: 1
на замовлення 688 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.14 грн |
| 14+ | 30.65 грн |
| 25+ | 27.77 грн |
| 100+ | 24.39 грн |
| 200+ | 23.24 грн |
| 250+ | 22.91 грн |
| 500+ | 22.08 грн |
| NGTB75N65FL2WG |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 200A
Collector-emitter voltage: 650V
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| SZESD5Z5.0T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 6.2V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| 1N5369BRLG | |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Leakage current: 0.5µA
на замовлення 2143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.97 грн |
| 30+ | 13.93 грн |
| FDP8860 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 556A
Power dissipation: 254W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: THT
Gate charge: 222nC
Kind of package: tube
Kind of channel: enhancement
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| MUR4100ERLG |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 4A; reel; Ifsm: 70A; CASE267-05; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 70A
Case: CASE267-05
Max. forward voltage: 1.85V
Reverse recovery time: 75ns
на замовлення 609 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 55.90 грн |
| 13+ | 32.96 грн |
| 25+ | 26.53 грн |
| 50+ | 24.72 грн |
| FDP047N08 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 164A; Idm: 656A; 268W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 164A
Pulsed drain current: 656A
Power dissipation: 268W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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| MC33179DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; ±2÷18VDC,4÷36VDC; SO14
Mounting: SMT
Operating temperature: -40...85°C
Integrated circuit features: low power
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Slew rate: 2V/μs
Bandwidth: 5MHz
Kind of package: reel; tape
Case: SO14
Type of integrated circuit: operational amplifier
Number of channels: quad; 4
на замовлення 2458 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.03 грн |
| 13+ | 32.63 грн |
| 25+ | 29.50 грн |
| 100+ | 25.30 грн |
| 250+ | 22.82 грн |
| 500+ | 21.34 грн |
| NCP1654BD65R2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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| NCP1654BD200R2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -1.5÷1.5A; 9÷20VDC; SO8; Topology: boost
Type of integrated circuit: PMIC
Output current: -1.5...1.5A
Mounting: SMD
Operating voltage: 9...20V DC
Number of channels: 1
Operating temperature: -40...125°C
Case: SO8
Topology: boost
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| 1N4743ATR |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; reel,tape; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| 1N4743A |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
Category: THT Zener diodes
Description: Diode: Zener; 1W; 13V; bulk; DO41; single diode; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 13V
Kind of package: bulk
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N47xxA
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| LP2951CD-3.0R2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; SO8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| FXL4TD245BQX |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Number of channels: 4
Case: DQFN16
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 1.1...3.6V DC
Number of outputs: 4
Number of inputs: 4
на замовлення 1995 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.54 грн |
| 7+ | 65.09 грн |
| 25+ | 63.45 грн |
| SZMM3Z18VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 91+ | 4.53 грн |
| 115+ | 3.59 грн |
| 126+ | 3.28 грн |
| 500+ | 2.73 грн |
| NCP1294EDBR2G |
|
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 260kHz÷1MHz; Ch: 1
Output current: 1A
Mounting: SMD
Case: TSSOP16
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 3...15V DC
Frequency: 260kHz...1MHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: boost; flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 260kHz÷1MHz; Ch: 1
Output current: 1A
Mounting: SMD
Case: TSSOP16
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Number of channels: 1
Operating voltage: 3...15V DC
Frequency: 260kHz...1MHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: boost; flyback
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| FDPF55N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 34.8A; Idm: 220A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 34.8A
Pulsed drain current: 220A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 37nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 161.50 грн |
| 10+ | 126.07 грн |
| MC74HC1G04DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Delay time: 7ns
Number of inputs: 1
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Delay time: 7ns
Number of inputs: 1
на замовлення 2030 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 114+ | 3.63 грн |
| 129+ | 3.21 грн |
| 149+ | 2.77 грн |
| 166+ | 2.49 грн |
| 182+ | 2.27 грн |
| 250+ | 2.06 грн |
| 500+ | 1.93 грн |
| 1000+ | 1.84 грн |
| NC7SZ175P6X |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; SC70-6; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC70-6
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
на замовлення 2663 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.32 грн |
| 97+ | 4.28 грн |
| 106+ | 3.89 грн |
| 117+ | 3.53 грн |
| 500+ | 3.43 грн |
| 1000+ | 3.25 грн |
| BZX84C10LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 0.2µA
на замовлення 2924 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.32 грн |
| 132+ | 3.13 грн |
| 196+ | 2.11 грн |
| 230+ | 1.80 грн |
| 283+ | 1.46 грн |
| 500+ | 1.24 грн |
| 1000+ | 1.08 грн |
| 1N5369BG |
|
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 51V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 51V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| MMSZ4702T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Leakage current: 50nA
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 97+ | 4.28 грн |
| 120+ | 3.46 грн |
| 139+ | 2.97 грн |
| 165+ | 2.50 грн |
| 250+ | 2.00 грн |
| 500+ | 1.68 грн |
| 1000+ | 1.40 грн |
| MOC3052M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3052M
Category: Optotriacs
Description: Optotriac; 5.3kV; Uout: 600V; DIP6; MOC3052M
Type of optocoupler: optotriac
Insulation voltage: 5.3kV
Kind of output: without zero voltage crossing driver
Case: DIP6
Trigger current: 10mA
Mounting: THT
Output voltage: 600V
Manufacturer series: MOC3052M
на замовлення 52 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.44 грн |
| 11+ | 40.37 грн |
| 50+ | 34.36 грн |
| SBAV99LT3G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 8990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.21 грн |
| 264+ | 1.57 грн |
| 311+ | 1.33 грн |
| 5000+ | 1.24 грн |
| LM2575T-3.3G |
|
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
на замовлення 41 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 194.33 грн |
| 10+ | 120.30 грн |
| NVTFS003N04CTAG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 103A; Idm: 484A; 22W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 103A
Pulsed drain current: 484A
Power dissipation: 22W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 4N35M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Mounting: THT
Kind of output: transistor
Turn-on time: 2µs
Turn-off time: 2µs
Number of channels: 1
Collector-emitter voltage: 30V
CTR@If: 100%@10mA
Insulation voltage: 7.5kV
Case: DIP6
Type of optocoupler: optocoupler
на замовлення 787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.49 грн |
| 22+ | 19.61 грн |
| 25+ | 18.13 грн |
| 50+ | 17.06 грн |
| 100+ | 16.07 грн |
| 500+ | 13.60 грн |
| NTB190N65S3HF |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 50A; 162W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Case: D2PAK
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 34nC
Power dissipation: 162W
Pulsed drain current: 50A
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од. на суму грн.
| FCP190N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.6A; Idm: 61.8A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.6A
Case: TO220-3
Gate-source voltage: ±20V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 0.19Ω
Gate charge: 60nC
Power dissipation: 208W
Pulsed drain current: 61.8A
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