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MBRD835LT4G MBRD835LT4G ONSEMI MBRD835LG.PDF Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 561 шт:
термін постачання 21-30 дні (днів)
9+53.62 грн
11+37.79 грн
50+30.53 грн
100+29.63 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74AC541MTC 74AC541MTC ONSEMI 74act541-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
8+55.38 грн
11+39.26 грн
Мінімальне замовлення: 8
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74AC541MTCX 74AC541MTCX ONSEMI 74AC541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
9+52.74 грн
12+35.02 грн
25+31.67 грн
50+29.63 грн
100+27.84 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74AC541SC 74AC541SC ONSEMI 74AC541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
11+42.20 грн
13+31.67 грн
25+26.28 грн
114+21.55 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
MC7812BDTRKG MC7812BDTRKG ONSEMI MC78xx.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
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80SQ045NRLG 80SQ045NRLG ONSEMI 80sq045n-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 1410 шт:
термін постачання 21-30 дні (днів)
8+56.26 грн
10+41.88 грн
25+37.96 грн
50+35.10 грн
100+32.49 грн
200+31.75 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BC807-25LT3G BC807-25LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC807-25LT3G SBC807-25LT3G ONSEMI bc807-16lt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC807-25WT1G SBC807-25WT1G ONSEMI bc807-25w-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SZBZX84C3V3LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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FOD817D3S ONSEMI FOD814-D.PDF Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
2000+7.38 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ESD7551N2T5G ESD7551N2T5G ONSEMI esd7551-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
36+12.31 грн
47+8.82 грн
57+7.18 грн
95+4.31 грн
111+3.70 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
ESD9X5.0ST5G ESD9X5.0ST5G ONSEMI esd9x3.3st5g-d.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 6591 шт:
термін постачання 21-30 дні (днів)
63+7.03 грн
93+4.41 грн
133+3.07 грн
157+2.61 грн
250+2.12 грн
500+1.82 грн
1000+1.57 грн
2000+1.53 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMSD4148T1G MMSD4148T1G ONSEMI MMSD4148T1.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
на замовлення 12032 шт:
термін постачання 21-30 дні (днів)
100+4.40 грн
209+1.96 грн
218+1.88 грн
243+1.68 грн
258+1.58 грн
278+1.47 грн
500+1.38 грн
1000+1.29 грн
1500+1.24 грн
Мінімальне замовлення: 100
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MMSD4148T3G MMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
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SMMSD4148T1G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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SMMSD4148T3G ONSEMI mmsd4148t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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H11L3M
+1
 		H11L3M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1ACEA70684749&compId=H11L3M.pdf?ci_sign=97f44a85c16d691187ed05abc6c8245169bdce3d Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
7+66.81 грн
11+37.71 грн
25+34.94 грн
50+32.90 грн
100+30.86 грн
500+30.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
H11L2M H11L2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC76CE73B3DE27&compId=H11L2M.pdf?ci_sign=afd07191113f7d108674ef17f17cf9cc7360db0c Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 898 шт:
термін постачання 21-30 дні (днів)
8+61.53 грн
50+24.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
H11L3SR2M H11L3SR2M ONSEMI H11L3M-D.PDF Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Mounting: SMD
Manufacturer series: H11L3
Transfer rate: 1Mbps
Case: PDIP6
Kind of output: gate; logic
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
7+67.69 грн
10+43.51 грн
100+38.85 грн
Мінімальне замовлення: 7
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NCS2003SN2T1G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: single
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NCS20032DMR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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NCS20032DR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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NCS20032DTBR2G ONSEMI ncs2003-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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DF01S DF01S ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
8+60.66 грн
11+40.41 грн
Мінімальне замовлення: 8
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NTTFS5C453NLTAG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTTFS5C453NLTWG ONSEMI nttfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLWFTAG ONSEMI nvtfs5c453nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTH4L013N120M3S ONSEMI nth4l013n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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NTH4L014N120M3P ONSEMI nth4l014n120m3p-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
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DTC114YM3T5G ONSEMI dtc114y-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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NDS355AN NDS355AN ONSEMI pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1302 шт:
термін постачання 21-30 дні (днів)
11+40.44 грн
13+32.49 грн
14+29.47 грн
50+22.45 грн
100+19.92 грн
500+15.26 грн
1000+14.37 грн
Мінімальне замовлення: 11
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NTHL160N120SC1 NTHL160N120SC1 ONSEMI NTHL160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTBG160N120SC1 ONSEMI ntbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVBG160N120SC1 ONSEMI nvbg160n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVHL160N120SC1 ONSEMI nvhl160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTH4L160N120SC1 NTH4L160N120SC1 ONSEMI NTH4L160N120SC1.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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NVH4L160N120SC1 ONSEMI nvh4l160n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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FGH50T65SQD-F155 FGH50T65SQD-F155 ONSEMI FGH50T65SQD.PDF Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
2+304.16 грн
3+253.86 грн
10+224.48 грн
30+202.44 грн
120+188.56 грн
Мінімальне замовлення: 2
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MM74HCT138M MM74HCT138M ONSEMI ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: TTL
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MC74HCT138ADR2G MC74HCT138ADR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7C20D3&compId=MC74HCT138A-D.pdf?ci_sign=24e0ad965980d645380015945f7dcc246794ee39 Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MC74HCT138ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7D60D3&compId=MC74HCT138A-D.pdf?ci_sign=93114e4752f6e2b8e2d0491c783cc3a0d3dcaaee Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MM74HCT138MX MM74HCT138MX ONSEMI MM74HCT138-D.PDF Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: CMOS
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FDD2572 FDD2572 ONSEMI pVersion=0046&contRep=ZT&docId=E20E081D963F93F1A303005056AB0C4F&compId=FDD2572.pdf?ci_sign=4de62bdfc984f3c4cdf77b8dfb8618eba2c573f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2257 шт:
термін постачання 21-30 дні (днів)
4+137.13 грн
10+110.20 грн
25+97.14 грн
100+84.89 грн
Мінімальне замовлення: 4
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MOC3051SM ONSEMI moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
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MOC3051SR2M ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
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MOC3051SR2VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
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MOC3051TVM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3051VM ONSEMI moc3052m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3081TVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SM ONSEMI moc3083m-d.pdf de93284-moc308x-100622.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SR2M ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SR2VM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SVM ONSEMI moc3083m-d.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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LMV393DMR2G ONSEMI lmv331-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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LMV393DR2G ONSEMI lmv331-d.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
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FDP20N50 FDP20N50 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE917722DDE0259&compId=FDP20N50F.pdf?ci_sign=a100ff65280d9c978576ff5b56da658bdf745fc2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L05ABDR2G NCV78L05ABDR2G ONSEMI pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCAC997FDC841EC0CE&compId=MC78LxxA_NCV78LxxA.PDF?ci_sign=2081134fd22880fc49cc2fa8e6e279ffda5d9cf3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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MBRD835LT4G MBRD835LG.PDF
MBRD835LT4G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 35V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 35V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.41V
Kind of package: reel; tape
Max. load current: 16A
на замовлення 561 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+53.62 грн
11+37.79 грн
50+30.53 грн
100+29.63 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74AC541MTC 74act541-d.pdf
74AC541MTC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP14
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 21 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.38 грн
11+39.26 грн
Мінімальне замовлення: 8
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74AC541MTCX 74AC541.pdf
74AC541MTCX
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; TSSOP20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 191 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.74 грн
12+35.02 грн
25+31.67 грн
50+29.63 грн
100+27.84 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
74AC541SC 74AC541.pdf
74AC541SC
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20; AC
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Kind of package: tube
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Kind of output: 3-state
Manufacturer series: AC
Kind of integrated circuit: buffer; line driver; non-inverting
на замовлення 119 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+42.20 грн
13+31.67 грн
25+26.28 грн
114+21.55 грн
Мінімальне замовлення: 11
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MC7812BDTRKG MC78xx.pdf
MC7812BDTRKG
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 1A; DPAK; SMD; MC7800
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: MC7800
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 15.5...27V
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80SQ045NRLG 80sq045n-d.pdf
80SQ045NRLG
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 8A; DO201AD; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.55V
Max. forward impulse current: 140A
Kind of package: reel; tape
на замовлення 1410 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.26 грн
10+41.88 грн
25+37.96 грн
50+35.10 грн
100+32.49 грн
200+31.75 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BC807-25LT3G bc807-16lt1-d.pdf
BC807-25LT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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SBC807-25LT3G bc807-16lt1-d.pdf
SBC807-25LT3G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC807-25WT1G bc807-25w-d.pdf
SBC807-25WT1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SZBZX84C3V3LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: BZX84C
Application: automotive industry
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FOD817D3S FOD814-D.PDF
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2000+7.38 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
ESD7551N2T5G esd7551-d.pdf
ESD7551N2T5G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.25W; 5V; CASE714AB,X2DFN2; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Mounting: SMD
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 0.22...0.35pF
Version: ESD
Peak pulse power dissipation: 0.25W
Case: CASE714AB; X2DFN2
на замовлення 626 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+12.31 грн
47+8.82 грн
57+7.18 грн
95+4.31 грн
111+3.70 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
ESD9X5.0ST5G esd9x3.3st5g-d.pdf
ESD9X5.0ST5G
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.15W; 6.2V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 6.2V
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 0.15W
Case: SOD923
на замовлення 6591 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.03 грн
93+4.41 грн
133+3.07 грн
157+2.61 грн
250+2.12 грн
500+1.82 грн
1000+1.57 грн
2000+1.53 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
MMSD4148T1G MMSD4148T1.PDF
MMSD4148T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
Capacitance: 4pF
Features of semiconductor devices: fast switching
Power dissipation: 0.425W
на замовлення 12032 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.40 грн
209+1.96 грн
218+1.88 грн
243+1.68 грн
258+1.58 грн
278+1.47 грн
500+1.38 грн
1000+1.29 грн
1500+1.24 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
MMSD4148T3G mmsd4148t1-d.pdf
MMSD4148T3G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 2A
Capacitance: 4pF
Leakage current: 5µA
Power dissipation: 0.425W
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SMMSD4148T1G mmsd4148t1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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SMMSD4148T3G mmsd4148t1-d.pdf
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD123; Ufmax: 1V; Ifsm: 1A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
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H11L3M pVersion=0046&contRep=ZT&docId=005056AB752F1EE79CF1ACEA70684749&compId=H11L3M.pdf?ci_sign=97f44a85c16d691187ed05abc6c8245169bdce3d
H11L3M
+1
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 0.1µs
Turn-off time: 0.12µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+66.81 грн
11+37.71 грн
25+34.94 грн
50+32.90 грн
100+30.86 грн
500+30.61 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
H11L2M pVersion=0046&contRep=ZT&docId=005056AB752F1ED6ACAC76CE73B3DE27&compId=H11L2M.pdf?ci_sign=afd07191113f7d108674ef17f17cf9cc7360db0c
H11L2M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 4.17kV; DIP6; H11LXM
Mounting: THT
Manufacturer series: H11LXM
Case: DIP6
Kind of output: Schmitt trigger
Type of optocoupler: optocoupler
Turn-on time: 4µs
Turn-off time: 4µs
Number of channels: 1
Insulation voltage: 4.17kV
на замовлення 898 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+61.53 грн
50+24.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
H11L3SR2M H11L3M-D.PDF
H11L3SR2M
Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate,logic; Uinsul: 4.17kV; 1Mbps
Mounting: SMD
Manufacturer series: H11L3
Transfer rate: 1Mbps
Case: PDIP6
Kind of output: gate; logic
Type of optocoupler: optocoupler
Output voltage: 0...16V
Turn-on time: 1µs
Turn-off time: 1.2µs
Number of channels: 1
Max. off-state voltage: 6V
Insulation voltage: 4.17kV
на замовлення 990 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.69 грн
10+43.51 грн
100+38.85 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
NCS2003SN2T1G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: single
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NCS20032DMR2G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Micro8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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NCS20032DR2G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: rail-to-rail output
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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NCS20032DTBR2G ncs2003-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; TSSOP8; 1.7÷5.5VDC; reel,tape
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Operating temperature: -40...125°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Number of channels: dual
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DF01S pVersion=0046&contRep=ZT&docId=005056AB752F1EE588F71CDC54636469&compId=DF01S.pdf?ci_sign=d3ee5e1e6c2b539f4cb4bd4c142840270b2feb33
DF01S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 100V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.66 грн
11+40.41 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
NTTFS5C453NLTAG nttfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTTFS5C453NLTWG nttfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLTAG nvtfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NVTFS5C453NLWFTAG nvtfs5c453nl-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 107A; Idm: 740A; 34W; WDFN8
Mounting: SMD
Case: WDFN8
On-state resistance: 3.1mΩ
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Gate charge: 35nC
Power dissipation: 34W
Drain current: 107A
Drain-source voltage: 40V
Pulsed drain current: 740A
Polarisation: unipolar
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NTH4L013N120M3S nth4l013n120m3s-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 505A; 340W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 254nC
Power dissipation: 340W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 505A
Polarisation: unipolar
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NTH4L014N120M3P nth4l014n120m3p-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Mounting: THT
Case: TO247-4
On-state resistance: 29mΩ
Kind of package: tube
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Gate charge: 322nC
Power dissipation: 343W
Drain current: 107A
Drain-source voltage: 1.2kV
Pulsed drain current: 407A
Polarisation: unipolar
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DTC114YM3T5G dtc114y-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Current gain: 80...140
Quantity in set/package: 8000pcs.
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NDS355AN pVersion=0046&contRep=ZT&docId=E20E097CB05218F1A303005056AB0C4F&compId=NDS355AN.pdf?ci_sign=51632ade24c946b391006d056116790ad8c03e8c
NDS355AN
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 5nC
на замовлення 1302 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.44 грн
13+32.49 грн
14+29.47 грн
50+22.45 грн
100+19.92 грн
500+15.26 грн
1000+14.37 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
NTHL160N120SC1 NTHL160N120SC1.PDF
NTHL160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 0.16Ω
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTBG160N120SC1 ntbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVBG160N120SC1 nvbg160n120sc1-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13.7A; Idm: 78A; 68W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: -5...15V
Gate charge: 33.8nC
On-state resistance: 0.365Ω
Drain current: 13.7A
Power dissipation: 68W
Pulsed drain current: 78A
Drain-source voltage: 1.2kV
Case: D2PAK-7
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NVHL160N120SC1 nvhl160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 69A; 59W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 337mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-3
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NTH4L160N120SC1 NTH4L160N120SC1.PDF
NTH4L160N120SC1
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -15...25V
Gate charge: 34nC
On-state resistance: 224mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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NVH4L160N120SC1 nvh4l160n120sc1-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12.3A; Idm: 69A; 55.5W
Type of transistor: N-MOSFET
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 34nC
On-state resistance: 377mΩ
Drain current: 12.3A
Power dissipation: 55.5W
Pulsed drain current: 69A
Drain-source voltage: 1.2kV
Case: TO247-4
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FGH50T65SQD-F155 FGH50T65SQD.PDF
FGH50T65SQD-F155
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 134W; TO247-3
Mounting: THT
Case: TO247-3
Type of transistor: IGBT
Gate-emitter voltage: ±20V
Collector current: 50A
Power dissipation: 134W
Pulsed collector current: 200A
Kind of package: tube
Collector-emitter voltage: 650V
Gate charge: 99nC
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+304.16 грн
3+253.86 грн
10+224.48 грн
30+202.44 грн
120+188.56 грн
Мінімальне замовлення: 2
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MM74HCT138M ONSM-S-A0003587563-1.pdf?t.download=true&u=5oefqw
MM74HCT138M
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; TTL; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: tube
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: TTL
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MC74HCT138ADR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7C20D3&compId=MC74HCT138A-D.pdf?ci_sign=24e0ad965980d645380015945f7dcc246794ee39
MC74HCT138ADR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: SOIC16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MC74HCT138ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62CC03C7D60D3&compId=MC74HCT138A-D.pdf?ci_sign=93114e4752f6e2b8e2d0491c783cc3a0d3dcaaee
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 1; IN: 6; CMOS,TTL; SMD; HCT
Type of integrated circuit: digital
Case: TSSOP16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 2...6V DC
Kind of integrated circuit: decoder; demultiplexer
Number of inputs: 6
Technology: CMOS; TTL
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MM74HCT138MX MM74HCT138-D.PDF
MM74HCT138MX
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,line decoder; Ch: 1; IN: 3; CMOS; SMD; SO16
Type of integrated circuit: digital
Case: SO16
Manufacturer series: HCT
Family: HCT
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...85°C
Quiescent current: 160µA
Number of channels: 1
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 3 to 8 line; line decoder
Number of inputs: 3
Technology: CMOS
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FDD2572 pVersion=0046&contRep=ZT&docId=E20E081D963F93F1A303005056AB0C4F&compId=FDD2572.pdf?ci_sign=4de62bdfc984f3c4cdf77b8dfb8618eba2c573f1
FDD2572
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; 135W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Power dissipation: 135W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
на замовлення 2257 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+137.13 грн
10+110.20 грн
25+97.14 грн
100+84.89 грн
Мінімальне замовлення: 4
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MOC3051SM moc3052m-d.pdf moc3052m-d.pdf DD93210-MOC3051_3052-091017.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: tube
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MOC3051SR2M moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Output voltage: 600V
Kind of package: reel; tape
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MOC3051SR2VM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; SMT6; Ch: 1; MOC305X; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: reel; tape
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MOC3051TVM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3051VM moc3052m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; triac; DIP6; Ch: 1; MOC305X; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC305X
Conform to the norm: VDE
Output voltage: 600V
Kind of package: tube
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MOC3081TVM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SM moc3083m-d.pdf de93284-moc308x-100622.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: tube
Manufacturer series: MOC3081M
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MOC3081SR2M moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SR2VM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; reel,tape
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: reel; tape
Manufacturer series: MOC3081M
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MOC3081SVM moc3083m-d.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3081M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 800V
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Manufacturer series: MOC3081M
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LMV393DMR2G lmv331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; Micro8; IB: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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LMV393DR2G lmv331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 1.5us; 2.7÷5V; SMT; SO8; reel,tape
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
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NSP2201MR6T1G nsp2201mr6-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; 500W; unidirectional; TSOP6; Ch: 2; reel,tape
Case: TSOP6
Type of diode: TVS array
Semiconductor structure: unidirectional
Application: USB
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Mounting: SMD
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FDP20N50 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE917722DDE0259&compId=FDP20N50F.pdf?ci_sign=a100ff65280d9c978576ff5b56da658bdf745fc2
FDP20N50
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
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NCV78L05ABDR2G pVersion=0046&contRep=ZT&docId=C524956E1CAE1EDCAC997FDC841EC0CE&compId=MC78LxxA_NCV78LxxA.PDF?ci_sign=2081134fd22880fc49cc2fa8e6e279ffda5d9cf3
NCV78L05ABDR2G
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SO8; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.7V
Output voltage: 5V
Output current: 0.1A
Case: SO8
Mounting: SMD
Manufacturer series: MC78L00A
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±5%
Number of channels: 1
Application: automotive industry
Input voltage: 7...20V
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