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NCP785AH50T1G NCP785AH50T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 10mA; SOT89; SMD; NCP785A
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 5V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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NCP785AH120T1G NCP785AH120T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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NCP785AH150T1G NCP785AH150T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.5V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
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NSVR0340HT1G ONSEMI nsr0340h-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; 5ns; reel,tape
Mounting: SMD
Capacitance: 6pF
Reverse recovery time: 5ns
Load current: 0.25A
Max. forward voltage: 0.59V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
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MMBT3906 MMBT3906 ONSEMI MMBT3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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FCH125N60E ONSEMI ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FCP125N60E ONSEMI fcp125n60e-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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NTP125N60S5H ONSEMI ntp125n60s5h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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ADP3120AJRZ-RL ADP3120AJRZ-RL ONSEMI adp3120a-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
6+75.25 грн
11+38.10 грн
25+33.77 грн
100+30.94 грн
Мінімальне замовлення: 6
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FNB41560
+1
 		FNB41560 ONSEMI fnb41560b2-d.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
1+1249.69 грн
3+1048.12 грн
12+935.83 грн
24+806.89 грн
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SBAS16XV2T5G SBAS16XV2T5G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10666 шт:
термін постачання 21-30 дні (днів)
35+13.26 грн
50+9.23 грн
100+7.82 грн
500+7.07 грн
8000+6.24 грн
Мінімальне замовлення: 35
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GBU8K GBU8K ONSEMI GBU8x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
5+91.50 грн
20+80.69 грн
100+72.37 грн
Мінімальне замовлення: 5
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DTA124EET1G ONSEMI dta124e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
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FDMS4D4N08C ONSEMI fdms4d4n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 498A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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SBRB1545CTG ONSEMI mbrb1545ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
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MMBTA92 MMBTA92 ONSEMI MMBTA92-DTE.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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SBAS16XV2T1G SBAS16XV2T1G ONSEMI bas16xv2t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 3818 шт:
термін постачання 21-30 дні (днів)
125+3.58 грн
132+3.16 грн
148+2.83 грн
172+2.43 грн
221+1.89 грн
500+1.45 грн
1000+1.31 грн
3000+1.21 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
MC74LCX16244DTG MC74LCX16244DTG ONSEMI mc74lcx16244-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
5+83.18 грн
Мінімальне замовлення: 5
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NCV8406ASTT1G NCV8406ASTT1G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 578 шт:
термін постачання 21-30 дні (днів)
4+117.35 грн
10+64.05 грн
25+57.40 грн
50+54.90 грн
Мінімальне замовлення: 4
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LM393M LM393M ONSEMI LM2903.pdf Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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BAT54 ONSEMI bat54x-f.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
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4N26SR2M 4N26SR2M ONSEMI 4N28SM.pdf 4N26SR2M.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-off time: 2µs
Turn-on time: 2µs
CTR@If: 20%@10mA
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SZMMSZ5226BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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KSC2073TU KSC2073TU ONSEMI KSC2073.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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MBR750 ONSEMI FAIRS45052-1.pdf?t.download=true&u=5oefqw mbr760-d.pdf MBR735%20SERIES_K2103.pdf ds23007.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 7.5A; TO220-2; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.72V
Max. forward impulse current: 150A
Kind of package: tube
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FDD3670 ONSEMI fdd3670-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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NXH004P120M3F2PTHG ONSEMI nxh004p120m3f2pthg-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
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NXH004P120M3F2PTNG ONSEMI nxh004p120m3f2ptng-d.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
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LL4148 LL4148 ONSEMI LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.5A
на замовлення 3433 шт:
термін постачання 21-30 дні (днів)
63+7.17 грн
100+4.16 грн
117+3.58 грн
156+2.68 грн
179+2.33 грн
500+1.61 грн
1000+1.33 грн
2500+0.99 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FFSP2065A ONSEMI ffsp2065a-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
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FFSP2065B ONSEMI ffsp2065b-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
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FFSP2065B-F085 ONSEMI ffsp2065b-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FFSP2065BDN-F085 ONSEMI ffsp2065bdn-f085-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FAN7842MX FAN7842MX ONSEMI fan7842-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
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NTHL125N65S3H ONSEMI nthl125n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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BC547B BC547B ONSEMI BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 9795 шт:
термін постачання 21-30 дні (днів)
19+24.19 грн
24+17.80 грн
28+15.06 грн
36+11.56 грн
100+7.82 грн
500+5.49 грн
1000+5.32 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
NTP055N65S3H ONSEMI ntp055n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 ONSEMI fcp125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP165N65S3 ONSEMI fcp165n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCB125N65S3 ONSEMI fcb125n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 ONSEMI fch125n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCH165N65S3R0-F155 ONSEMI fch165n65s3r0-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 ONSEMI fcp125n65s3-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTB095N65S3HF ONSEMI ntb095n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14512BDR2G MC14512BDR2G ONSEMI mc14512b-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: data selector
Mounting: SMD
Family: HEF4000B
Operating temperature: -40...85°C
Number of channels: 8
Number of inputs: 8
Case: SO16
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)
12+40.31 грн
16+26.37 грн
25+23.54 грн
100+20.46 грн
250+19.13 грн
500+18.30 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
FDBL0150N80 ONSEMI fdbl0150n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
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FSL538APG ONSEMI FSL538HR-D.PDF Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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FSL538HPG ONSEMI fsl538hr-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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BZX84C15 ONSEMI BZX84Cxx.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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MC74HC377ADTR2G ONSEMI MC74HC377A-D.pdf Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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BZX84C75LT1G BZX84C75LT1G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 41998 шт:
термін постачання 21-30 дні (днів)
56+8.06 грн
105+3.99 грн
208+2.00 грн
500+1.51 грн
1000+1.40 грн
3000+1.34 грн
12000+1.21 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
FDD6685 ONSEMI FDD6685-D.PDF 0fc61bbc6b400209eba76145944cf814.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FJL4315OTU ONSEMI fjl4315-d.pdf FAIR-S-A0002366066-1.pdf?t.download=true&u=5oefqw Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MMSD103T1G MMSD103T1G ONSEMI mmsd103t1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Type of diode: switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Power dissipation: 0.4W
на замовлення 911 шт:
термін постачання 21-30 дні (днів)
63+7.17 грн
79+5.32 грн
116+3.60 грн
500+2.75 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5364BRLG 1N5364BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)
16+28.67 грн
19+22.63 грн
21+20.55 грн
100+14.64 грн
500+13.39 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
1N5364BG 1N5364BG ONSEMI 1N53xx.PDF Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 615 шт:
термін постачання 21-30 дні (днів)
18+25.08 грн
21+20.30 грн
23+18.63 грн
50+14.56 грн
100+13.06 грн
250+12.14 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ESD9B3.3ST5G ESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
на замовлення 10782 шт:
термін постачання 21-30 дні (днів)
46+9.85 грн
80+5.24 грн
133+3.14 грн
161+2.60 грн
250+2.13 грн
Мінімальне замовлення: 46
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SZESD9B3.3ST5G ONSEMI esd9b-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NCP1234BD100R2G ONSEMI ncp1234-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
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NCP1234BD65R2G ONSEMI ncp1234-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
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NCP785AH50T1G ncp785a-d.pdf
NCP785AH50T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 10mA; SOT89; SMD; NCP785A
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 5V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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NCP785AH120T1G ncp785a-d.pdf
NCP785AH120T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.5V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
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NSVR0340HT1G nsr0340h-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 0.25A; 5ns; reel,tape
Mounting: SMD
Capacitance: 6pF
Reverse recovery time: 5ns
Load current: 0.25A
Max. forward voltage: 0.59V
Max. forward impulse current: 1A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky switching
Semiconductor structure: single diode
Case: SOD323
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MMBT3906 MMBT3906.pdf
MMBT3906
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.35W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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FCH125N60E ONSM-S-A0003584881-1.pdf?t.download=true&u=5oefqw fch125n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 87A; 278W; TO247
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.102Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO247
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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FCP125N60E fcp125n60e-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 87A; 278W; TO220-3
Polarisation: unipolar
Gate charge: 75nC
On-state resistance: 0.125Ω
Drain current: 29A
Gate-source voltage: ±20V
Power dissipation: 278W
Pulsed drain current: 87A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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NTP125N60S5H ntp125n60s5h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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ADP3120AJRZ-RL adp3120a-d.pdf
ADP3120AJRZ-RL
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-/low-side,MOSFET gate driver; SO8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
на замовлення 199 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+75.25 грн
11+38.10 грн
25+33.77 грн
100+30.94 грн
Мінімальне замовлення: 6
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FNB41560 fnb41560b2-d.pdf
FNB41560
+1
Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAA-A26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAA-A26
Output current: 15A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 34W
Collector-emitter voltage: 600V
на замовлення 51 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1249.69 грн
3+1048.12 грн
12+935.83 грн
24+806.89 грн
В кошику  од. на суму  грн.
SBAS16XV2T5G bas16xv2t1-d.pdf
SBAS16XV2T5G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 50µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 10666 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+13.26 грн
50+9.23 грн
100+7.82 грн
500+7.07 грн
8000+6.24 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
GBU8K GBU8x.PDF
GBU8K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 495 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+91.50 грн
20+80.69 грн
100+72.37 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
DTA124EET1G dta124e-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Current gain: 60...100
Power dissipation: 0.2W
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FDMS4D4N08C fdms4d4n08c-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 78A
Pulsed drain current: 498A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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SBRB1545CTG mbrb1545ct-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 7.5Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. load current: 15A
Max. forward impulse current: 150A
Kind of package: tube
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MMBTA92 MMBTA92-DTE.PDF
MMBTA92
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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SBAS16XV2T1G bas16xv2t1-d.pdf
SBAS16XV2T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOD523; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
на замовлення 3818 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.58 грн
132+3.16 грн
148+2.83 грн
172+2.43 грн
221+1.89 грн
500+1.45 грн
1000+1.31 грн
3000+1.21 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
MC74LCX16244DTG mc74lcx16244-d.pdf
MC74LCX16244DTG
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Case: TSSOP48
Mounting: SMD
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Type of integrated circuit: digital
Supply voltage: 2...3.6V DC
Number of channels: 16
Manufacturer series: LCX
Kind of output: 3-state
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+83.18 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
NCV8406ASTT1G ncv8406-d.pdf
NCV8406ASTT1G
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 578 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.35 грн
10+64.05 грн
25+57.40 грн
50+54.90 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LM393M LM2903.pdf
LM393M
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8; tube; 150nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 2
Operating voltage: 2...36V
Mounting: SMT
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Input offset current: 150nA
Kind of package: tube
Kind of output: open collector
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BAT54 bat54x-f.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Power dissipation: 0.29W
Max. forward impulse current: 0.6A
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4N26SR2M 4N28SM.pdf 4N26SR2M.pdf
4N26SR2M
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-off time: 2µs
Turn-on time: 2µs
CTR@If: 20%@10mA
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SZMMSZ5226BT1G MMSZ52xxT1G.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.3V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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KSC2073TU KSC2073.pdf
KSC2073TU
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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MBR750 FAIRS45052-1.pdf?t.download=true&u=5oefqw mbr760-d.pdf MBR735%20SERIES_K2103.pdf ds23007.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 7.5A; TO220-2; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 0.72V
Max. forward impulse current: 150A
Kind of package: tube
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FDD3670 fdd3670-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 100A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 100A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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NXH004P120M3F2PTHG nxh004p120m3f2pthg-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 284A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 284A
Pulsed drain current: 568A
Drain-source voltage: 1.2kV
Power dissipation: 785W
Topology: MOSFET half-bridge
Kind of package: in-tray
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NXH004P120M3F2PTNG nxh004p120m3f2ptng-d.pdf
Виробник: ONSEMI
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 338A; PIM36; Press-in PCB
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Technology: SiC
Mechanical mounting: screw
Case: PIM36
Gate-source voltage: -10...22V
On-state resistance: 7.5mΩ
Drain current: 338A
Pulsed drain current: 676A
Drain-source voltage: 1.2kV
Power dissipation: 1098W
Topology: MOSFET half-bridge
Kind of package: in-tray
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LL4148 LL4148.pdf
LL4148
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD80; Ufmax: 1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: SOD80
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.5W
Max. load current: 0.5A
на замовлення 3433 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.17 грн
100+4.16 грн
117+3.58 грн
156+2.68 грн
179+2.33 грн
500+1.61 грн
1000+1.33 грн
2500+0.99 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
FFSP2065A ffsp2065a-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
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FFSP2065B ffsp2065b-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
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FFSP2065B-F085 ffsp2065b-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FFSP2065BDN-F085 ffsp2065bdn-f085-d.pdf
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 1.7V
Kind of package: tube
Application: automotive industry
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FAN7842MX fan7842-d.pdf
FAN7842MX
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; MillerDrive™
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Technology: MillerDrive™
Case: SOP8
Output current: -650...350mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 140ns
Pulse fall time: 80ns
Kind of package: reel; tape
Voltage class: 200V
Protection: undervoltage UVP
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NTHL125N65S3H nthl125n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 171W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 171W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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BC547B BC546%2C%20547%2C%20548%20Rev5.pdf bc546.pdf BC547.pdf FAIR-S-A0000134114-1.pdf?t.download=true&u=5oefqw
BC547B
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 110...800
Mounting: THT
Frequency: 300MHz
на замовлення 9795 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+24.19 грн
24+17.80 грн
28+15.06 грн
36+11.56 грн
100+7.82 грн
500+5.49 грн
1000+5.32 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
NTP055N65S3H ntp055n65s3h-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 47A; Idm: 132A; 305W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 47A
Pulsed drain current: 132A
Power dissipation: 305W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3R0 fcp125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCP165N65S3 fcp165n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCB125N65S3 fcb125n65s3-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCH125N65S3R0-F155 fch125n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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FCH165N65S3R0-F155 fch165n65s3r0-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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FCP125N65S3 fcp125n65s3-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 181W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
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NTB095N65S3HF ntb095n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC14512BDR2G mc14512b-d.pdf
MC14512BDR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; data selector; Ch: 8; IN: 8; TTL; SMD; SO16; HEF4000B
Supply voltage: 3...18V DC
Technology: TTL
Type of integrated circuit: digital
Kind of package: reel; tape
Kind of integrated circuit: data selector
Mounting: SMD
Family: HEF4000B
Operating temperature: -40...85°C
Number of channels: 8
Number of inputs: 8
Case: SO16
на замовлення 2493 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+40.31 грн
16+26.37 грн
25+23.54 грн
100+20.46 грн
250+19.13 грн
500+18.30 грн
Мінімальне замовлення: 12
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FDBL0150N80 fdbl0150n80-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 172nC
Kind of channel: enhancement
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FSL538APG FSL538HR-D.PDF
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 860mA; 800V; 100kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 860mA
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 20W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 0.1MHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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FSL538HPG fsl538hr-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 660mA; 800V; 130kHz; Ch: 1; DIP7; flyback
Type of integrated circuit: PMIC
Number of channels: 1
Case: DIP7
Mounting: THT
Operating temperature: -40...125°C
Topology: flyback
Output current: 0.66A
On-state resistance: 4.6Ω
Operating voltage: 8...24.5V DC
Power: 17W
Duty cycle factor: 68...82%
Input voltage: 85...265V
Frequency: 130kHz
Output voltage: 800V
Kind of integrated circuit: PWM controller
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BZX84C15 BZX84Cxx.pdf
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 15V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
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MC74HC377ADTR2G MC74HC377A-D.pdf
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Manufacturer series: HC
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BZX84C75LT1G bzx84c2v4lt1-d.pdf
BZX84C75LT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 75V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 75V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 41998 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+8.06 грн
105+3.99 грн
208+2.00 грн
500+1.51 грн
1000+1.40 грн
3000+1.34 грн
12000+1.21 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
FDD6685 FDD6685-D.PDF 0fc61bbc6b400209eba76145944cf814.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FJL4315OTU fjl4315-d.pdf FAIR-S-A0002366066-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 17A; 150W; TO264
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 17A
Power dissipation: 150W
Case: TO264
Current gain: 55...160
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MMSD103T1G mmsd103t1-d.pdf
MMSD103T1G
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD123; Ufmax: 1.25V; 400mW
Type of diode: switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1.25V
Capacitance: 5pF
Reverse recovery time: 50ns
Leakage current: 0.1mA
Power dissipation: 0.4W
на замовлення 911 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
63+7.17 грн
79+5.32 грн
116+3.60 грн
500+2.75 грн
Мінімальне замовлення: 63
В кошику  од. на суму  грн.
1N5364BRLG description 1N53xx.PDF
1N5364BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 2150 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.67 грн
19+22.63 грн
21+20.55 грн
100+14.64 грн
500+13.39 грн
Мінімальне замовлення: 16
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1N5364BG 1N53xx.PDF
1N5364BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 33V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 33V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 615 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.08 грн
21+20.30 грн
23+18.63 грн
50+14.56 грн
100+13.06 грн
250+12.14 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ESD9B3.3ST5G esd9b-d.pdf
ESD9B3.3ST5G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 5÷7V; SOD923; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Leakage current: 0.1µA
Capacitance: 15pF
Peak pulse power dissipation: 0.3W
на замовлення 10782 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.85 грн
80+5.24 грн
133+3.14 грн
161+2.60 грн
250+2.13 грн
Мінімальне замовлення: 46
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SZESD9B3.3ST5G esd9b-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5÷7V; bidirectional; SOD923F; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5...7V
Semiconductor structure: bidirectional
Case: SOD923F
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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NCP1234BD100R2G ncp1234-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
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NCP1234BD65R2G ncp1234-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Number of channels: 1
Case: SO7
Mounting: SMD
Operating temperature: -40...125°C
Topology: flyback
Operating voltage: 9.5...26.5V DC
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