| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NRVB460MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 60V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.74V Max. load current: 8A Max. forward impulse current: 40A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVB540MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 150A Semiconductor structure: single diode Case: DFN5 Mounting: SMD Kind of package: reel; tape Load current: 5A Max. forward voltage: 0.58V Max. load current: 10A Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Application: automotive industry Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 5A Max. forward voltage: 0.78V Max. forward impulse current: 100A Max. load current: 10A Max. off-state voltage: 60V Kind of package: reel; tape Case: DFN5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVB560MFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape Application: automotive industry Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: SMD Load current: 5A Max. forward voltage: 0.78V Max. forward impulse current: 100A Max. load current: 10A Max. off-state voltage: 60V Kind of package: reel; tape Case: DFN5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVTS1045EMFST1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVTS1045EMFST3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: DFN5 Max. forward voltage: 0.6V Max. load current: 20A Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| HMHAA280R2 | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-0%@5mA Collector-emitter voltage: 80V Case: MFP4 Max. off-state voltage: 6V Manufacturer series: HMHAA280 |
на замовлення 2070 шт: термін постачання 21-30 дні (днів) |
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| FDP030N06B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMFD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| NVMFWD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| NVTFWS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5368BG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 47V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 929 шт: термін постачання 21-30 дні (днів) |
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| 1N5368BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 47V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS002N04CLTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 142A Pulsed drain current: 706A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS002N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 136A Pulsed drain current: 676A Power dissipation: 27W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3042SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube Manufacturer series: MOC304XM Kind of output: triac Trigger current: 10mA Number of channels: 1 Max. off-state voltage: 6V Output voltage: 400V Insulation voltage: 4.17kV Case: SMT6 Type of optocoupler: optotriac Mounting: SMD Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LM317LBZG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LBZRAG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LBZRPG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZREG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZRMG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LM317LZRPG | ONSEMI |
Category: Adjustable voltage regulatorsDescription: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; linear Output voltage: 1.2...37V Output current: 20mA Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TL431BIDG | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source; 2.495V; ±0.4%; SO8; tube; 100mA Type of integrated circuit: voltage reference source Reference voltage: 2.495V Tolerance: ±0.4% Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 2.495...36V Kind of package: tube Maximum output current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NCS2003ASN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SOT23-5 Slew rate: 8V/μs Operating temperature: -40...85°C Input offset voltage: 3mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SP57P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SC88 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC Manufacturer series: TinyLogic |
на замовлення 2813 шт: термін постачання 21-30 дні (днів) |
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| NC7SV57L6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of gate: AND; configurable; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SIP6 Supply voltage: 0.9...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: NC Manufacturer series: TinyLogic |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AUP1G58FHX | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AUP Kind of integrated circuit: inverter Manufacturer series: AUP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74AUP1G58L6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP Type of integrated circuit: digital Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AUP Kind of integrated circuit: inverter Manufacturer series: AUP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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HCPL2631 | ONSEMI |
Category: Optocouplers - digital outputDescription: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: open collector Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCW70LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 215...500 Mounting: SMD Kind of package: reel; tape |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C6V8ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SZBZX84C6V8LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 2µA Manufacturer series: BZX84C Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CAT24AA16TDI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSOT23-5 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100EP195FAG | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz Operating temperature: -40...85°C Supply voltage: 3.3V DC Frequency: 1.2GHz Kind of output: ECL Type of integrated circuit: digital Kind of integrated circuit: PDC Case: LQFP32 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC100EP16MNR4G | ONSEMI |
Category: Other logic integrated circuitsDescription: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: differential; driver; receiver Mounting: SMD Case: DFN8 Supply voltage: 3...5.5V DC Operating temperature: -40...85°C Number of channels: 1 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC74LCX07DR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Manufacturer series: LCX Kind of output: open drain Case: SO14 Mounting: SMD Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...85°C Supply voltage: 2...5.5V DC Number of channels: 6 Technology: CMOS; TTL Type of integrated circuit: digital |
на замовлення 2418 шт: термін постачання 21-30 дні (днів) |
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MC74LCX07DG | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX Manufacturer series: LCX Kind of output: open drain Case: SO14 Kind of package: tube Mounting: SMD Kind of integrated circuit: buffer; non-inverting Operating temperature: -40...85°C Supply voltage: 2.3...3.6V DC Number of channels: 6 Technology: CMOS; TTL Type of integrated circuit: digital |
на замовлення 2752 шт: термін постачання 21-30 дні (днів) |
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MC74HC365ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC Type of integrated circuit: digital Number of channels: 6 Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of integrated circuit: 3-state; buffer; hex Kind of output: 3-state Technology: CMOS Manufacturer series: HC Kind of package: reel; tape |
на замовлення 2398 шт: термін постачання 21-30 дні (днів) |
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MC74VHC1G02DTT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Number of channels: single; 1 Case: TSSOP5 Supply voltage: 2...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Number of inputs: 2 Kind of gate: NOR Family: VHC Quiescent current: 40µA |
на замовлення 1568 шт: термін постачання 21-30 дні (днів) |
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MC74HCT74ADR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Mounting: SMD Case: SO14 Operating temperature: -55...125°C Supply voltage: 4.5...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Technology: CMOS Manufacturer series: HCT |
на замовлення 1999 шт: термін постачання 21-30 дні (днів) |
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MJ21193G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3 Case: TO3 Power dissipation: 250W Current gain: 8...75 Collector current: 16A Collector-emitter voltage: 250V Frequency: 4MHz Kind of package: in-tray Polarisation: bipolar Mounting: THT Type of transistor: PNP |
на замовлення 54 шт: термін постачання 21-30 дні (днів) |
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SZMMSZ4699T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode Manufacturer series: MMSZ4xxT1G Application: automotive industry Mounting: SMD Semiconductor structure: single diode Type of diode: Zener Leakage current: 50nA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 12V Kind of package: reel; tape Case: SOD123 |
на замовлення 1941 шт: термін постачання 21-30 дні (днів) |
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| NSVMMBTH10LT1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 25V Power dissipation: 0.3W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MUN2214T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 8370 шт: термін постачання 21-30 дні (днів) |
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MUN2233T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.23W Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NSS60201SMTTBG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry Application: automotive industry Polarisation: bipolar Mounting: SMD Type of transistor: NPN Case: WDFN6 Kind of package: reel; tape Power dissipation: 1.8W Collector current: 2A Current gain: 35 Collector-emitter voltage: 60V Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSS60200LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Polarisation: bipolar Mounting: SMD Type of transistor: PNP Case: SOT23; TO236AB Kind of package: reel; tape Power dissipation: 0.54W Collector current: 2A Current gain: 150 Collector-emitter voltage: 60V Frequency: 100MHz |
товару немає в наявності |
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| NSS60601MZ4T1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Polarisation: bipolar Mounting: SMD Type of transistor: NPN Case: SOT223-4; TO261-4 Kind of package: reel; tape Power dissipation: 2W Collector current: 6A Current gain: 120...360 Collector-emitter voltage: 60V Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS60100DMTTBG | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6 Application: automotive industry Polarisation: bipolar Mounting: SMD Type of transistor: PNP x2 Case: WDFN6 Kind of package: reel; tape Power dissipation: 2.27W Collector current: 1A Collector-emitter voltage: 60V |
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| NSS60101DMTTBG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6 Application: automotive industry Polarisation: bipolar Mounting: SMD Type of transistor: NPN x2 Case: WDFN6 Kind of package: reel; tape Power dissipation: 2.27W Collector current: 1A Current gain: 90 Collector-emitter voltage: 60V Frequency: 180MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS60600MZ4T1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS60600MZ4T3G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 6A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 120...360 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| NSS60601MZ4T3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Polarisation: bipolar Mounting: SMD Type of transistor: NPN Case: SOT223-4; TO261-4 Kind of package: reel; tape Power dissipation: 2W Collector current: 6A Current gain: 120...360 Collector-emitter voltage: 60V Frequency: 100MHz |
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В кошику од. на суму грн. | |||||||||||||||||
| LM431SACM32X | ONSEMI |
Category: Reference voltage sources - circuitsDescription: IC: voltage reference source Type of integrated circuit: voltage reference source |
на замовлення 24000 шт: термін постачання 21-30 дні (днів) |
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| GRULM431SCCM3X | ONSEMI |
Category: Unclassified Description: GRULM431SCCM3X |
на замовлення 162000 шт: термін постачання 21-30 дні (днів) |
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|
SBAT54T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.4W |
на замовлення 2011 шт: термін постачання 21-30 дні (днів) |
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LM358DG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.6V/μs Voltage supply range: ± 1.5...16V DC; 3...32V DC |
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В кошику од. на суму грн. | ||||||||||||||||
| FCP099N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 37A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 111A Gate charge: 88nC |
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| NTHL099N60S5 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 33A Power dissipation: 184W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 48nC |
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В кошику од. на суму грн. | |||||||||||||||||
| AFGB40T65RQDN | ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Case: D2PAK Mounting: SMD Kind of package: reel; tape Gate-emitter voltage: ±20V Power dissipation: 169.68W Pulsed collector current: 160A Application: automotive industry Features of semiconductor devices: integrated anti-parallel diode Gate charge: 51nC |
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В кошику од. на суму грн. |
| NRVB460MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. load current: 8A
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 4A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Max. load current: 8A
Max. forward impulse current: 40A
Kind of package: reel; tape
Application: automotive industry
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| NRVB540MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 150A
Semiconductor structure: single diode
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Load current: 5A
Max. forward voltage: 0.58V
Max. load current: 10A
Application: automotive industry
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| NRVB560MFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
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| NRVB560MFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 60V; 5A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 5A
Max. forward voltage: 0.78V
Max. forward impulse current: 100A
Max. load current: 10A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: DFN5
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| NRVTS1045EMFST1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| NRVTS1045EMFST3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: DFN5
Max. forward voltage: 0.6V
Max. load current: 20A
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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| HMHAA280R2 |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-0%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Max. off-state voltage: 6V
Manufacturer series: HMHAA280
на замовлення 2070 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 61.68 грн |
| 10+ | 40.57 грн |
| 40+ | 23.55 грн |
| 110+ | 22.27 грн |
| FDP030N06B-F102 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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| NTMFD030N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWD030N06CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS030N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N5368BG | ![]() |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 929 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.41 грн |
| 19+ | 21.80 грн |
| 21+ | 19.57 грн |
| 50+ | 14.88 грн |
| 71+ | 13.36 грн |
| 100+ | 13.28 грн |
| 193+ | 12.65 грн |
| 250+ | 12.17 грн |
| 1N5368BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 47V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 47V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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| NVTFS002N04CLTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 142A; Idm: 706A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 142A
Pulsed drain current: 706A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFS002N04CTAG |
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 136A; Idm: 676A; 27W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 136A
Pulsed drain current: 676A
Power dissipation: 27W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MOC3042SM |
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Manufacturer series: MOC304XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC304XM; tube
Manufacturer series: MOC304XM
Kind of output: triac
Trigger current: 10mA
Number of channels: 1
Max. off-state voltage: 6V
Output voltage: 400V
Insulation voltage: 4.17kV
Case: SMT6
Type of optocoupler: optotriac
Mounting: SMD
Kind of package: tube
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| LM317LBZG | ![]() |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: bulk
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| LM317LBZRAG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: reel; tape
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| LM317LBZRPG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| LM317LZREG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: reel; tape
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: reel; tape
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| LM317LZRMG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| LM317LZRPG |
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Виробник: ONSEMI
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.02A; TO92
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; linear
Output voltage: 1.2...37V
Output current: 20mA
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| TL431BIDG |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.4%; SO8; tube; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.4%
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 2.495...36V
Kind of package: tube
Maximum output current: 0.1A
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| NCS2003ASN2T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 8V/μs
Operating temperature: -40...85°C
Input offset voltage: 3mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SOT23-5; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SOT23-5
Slew rate: 8V/μs
Operating temperature: -40...85°C
Input offset voltage: 3mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: single
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| NC7SP57P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SC88
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Manufacturer series: TinyLogic
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SC88
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Manufacturer series: TinyLogic
на замовлення 2813 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.41 грн |
| 18+ | 22.83 грн |
| 20+ | 20.36 грн |
| 25+ | 18.61 грн |
| 50+ | 15.67 грн |
| 100+ | 12.73 грн |
| 147+ | 6.36 грн |
| 402+ | 6.05 грн |
| NC7SV57L6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Manufacturer series: TinyLogic
Category: Gates, inverters
Description: IC: digital; AND,configurable,NAND,NOR,OR,XNOR; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of gate: AND; configurable; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Supply voltage: 0.9...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: NC
Manufacturer series: TinyLogic
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| 74AUP1G58FHX |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: inverter
Manufacturer series: AUP
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: inverter
Manufacturer series: AUP
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| 74AUP1G58L6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: inverter
Manufacturer series: AUP
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 1; IN: 3; CMOS; SMD; MicroPak6; AUP; AUP
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AUP
Kind of integrated circuit: inverter
Manufacturer series: AUP
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| HCPL2631 |
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Виробник: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 2; OUT: open collector; 10Mbps; DIP8; 2.5kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: open collector
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
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| BCW70LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 215...500
Mounting: SMD
Kind of package: reel; tape
на замовлення 392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.28 грн |
| 50+ | 8.11 грн |
| 57+ | 7.08 грн |
| 86+ | 4.65 грн |
| 104+ | 3.84 грн |
| SZBZX84C6V8ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| SZBZX84C6V8LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: BZX84C
Application: automotive industry
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| CAT24AA16TDI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSOT23-5
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
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| MC100EP195FAG |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Kind of output: ECL
Type of integrated circuit: digital
Kind of integrated circuit: PDC
Case: LQFP32
Mounting: SMD
Category: Other logic integrated circuits
Description: IC: digital; PDC; 3.3VDC; SMD; LQFP32; OUT: ECL; 1.2GHz
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Frequency: 1.2GHz
Kind of output: ECL
Type of integrated circuit: digital
Kind of integrated circuit: PDC
Case: LQFP32
Mounting: SMD
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| MC100EP16MNR4G |
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Виробник: ONSEMI
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
Category: Other logic integrated circuits
Description: IC: digital; receiver,differential,driver; Ch: 1; 3÷5.5VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; driver; receiver
Mounting: SMD
Case: DFN8
Supply voltage: 3...5.5V DC
Operating temperature: -40...85°C
Number of channels: 1
Kind of package: reel; tape
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| MC74LCX07DR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: SO14
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: SO14
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2...5.5V DC
Number of channels: 6
Technology: CMOS; TTL
Type of integrated circuit: digital
на замовлення 2418 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.84 грн |
| 19+ | 21.24 грн |
| 25+ | 18.93 грн |
| 79+ | 11.93 грн |
| 216+ | 11.30 грн |
| MC74LCX07DG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: SO14
Kind of package: tube
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.3...3.6V DC
Number of channels: 6
Technology: CMOS; TTL
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; LCX
Manufacturer series: LCX
Kind of output: open drain
Case: SO14
Kind of package: tube
Mounting: SMD
Kind of integrated circuit: buffer; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.3...3.6V DC
Number of channels: 6
Technology: CMOS; TTL
Type of integrated circuit: digital
на замовлення 2752 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.10 грн |
| 11+ | 38.74 грн |
| 25+ | 32.14 грн |
| 36+ | 26.65 грн |
| 97+ | 25.22 грн |
| 110+ | 24.42 грн |
| 275+ | 24.26 грн |
| MC74HC365ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Number of channels: 6
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of integrated circuit: 3-state; buffer; hex
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Kind of package: reel; tape
на замовлення 2398 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.41 грн |
| 20+ | 20.68 грн |
| 22+ | 18.30 грн |
| 26+ | 15.51 грн |
| 70+ | 13.52 грн |
| 192+ | 12.73 грн |
| MC74VHC1G02DTT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NOR
Family: VHC
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; CMOS; SMD; TSSOP5; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Number of channels: single; 1
Case: TSSOP5
Supply voltage: 2...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Number of inputs: 2
Kind of gate: NOR
Family: VHC
Quiescent current: 40µA
на замовлення 1568 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.85 грн |
| 78+ | 5.12 грн |
| 250+ | 4.41 грн |
| 1000+ | 3.97 грн |
| MC74HCT74ADR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS; HCT; SMD; SO14; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Technology: CMOS
Manufacturer series: HCT
на замовлення 1999 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.40 грн |
| 17+ | 24.10 грн |
| 25+ | 19.89 грн |
| 85+ | 10.98 грн |
| 233+ | 10.42 грн |
| 1000+ | 10.02 грн |
| MJ21193G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Case: TO3
Power dissipation: 250W
Current gain: 8...75
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 250V; 16A; 250W; TO3
Case: TO3
Power dissipation: 250W
Current gain: 8...75
Collector current: 16A
Collector-emitter voltage: 250V
Frequency: 4MHz
Kind of package: in-tray
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
на замовлення 54 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 531.15 грн |
| 2+ | 467.75 грн |
| 5+ | 420.82 грн |
| 10+ | 378.66 грн |
| 25+ | 376.27 грн |
| SZMMSZ4699T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 50nA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD123
на замовлення 1941 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.28 грн |
| 33+ | 12.09 грн |
| 38+ | 10.50 грн |
| 56+ | 7.22 грн |
| 100+ | 6.14 грн |
| 222+ | 4.21 грн |
| 611+ | 3.98 грн |
| 1000+ | 3.83 грн |
| NSVMMBTH10LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.3W; SOT23; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.3W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Application: automotive industry
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| MUN2214T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 8370 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.28 грн |
| 57+ | 7.08 грн |
| 82+ | 4.85 грн |
| 100+ | 4.06 грн |
| 500+ | 2.75 грн |
| 591+ | 1.58 грн |
| 1623+ | 1.50 грн |
| MUN2233T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.23W; SC59; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.23W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.42 грн |
| 60+ | 6.68 грн |
| 108+ | 3.70 грн |
| 500+ | 2.48 грн |
| 590+ | 1.58 грн |
| 1621+ | 1.50 грн |
| 6000+ | 1.49 грн |
| NSS60201SMTTBG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 1.8W
Collector current: 2A
Current gain: 35
Collector-emitter voltage: 60V
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 1.8W
Collector current: 2A
Current gain: 35
Collector-emitter voltage: 60V
Frequency: 180MHz
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| NSS60200LT1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.54W
Collector current: 2A
Current gain: 150
Collector-emitter voltage: 60V
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP
Case: SOT23; TO236AB
Kind of package: reel; tape
Power dissipation: 0.54W
Collector current: 2A
Current gain: 150
Collector-emitter voltage: 60V
Frequency: 100MHz
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од. на суму грн.
| NSS60601MZ4T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 6A
Current gain: 120...360
Collector-emitter voltage: 60V
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 6A
Current gain: 120...360
Collector-emitter voltage: 60V
Frequency: 100MHz
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| NSS60100DMTTBG |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP x2
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 2.27W
Collector current: 1A
Collector-emitter voltage: 60V
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: PNP x2
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 2.27W
Collector current: 1A
Collector-emitter voltage: 60V
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| NSS60101DMTTBG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 2.27W
Collector current: 1A
Current gain: 90
Collector-emitter voltage: 60V
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Application: automotive industry
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Case: WDFN6
Kind of package: reel; tape
Power dissipation: 2.27W
Collector current: 1A
Current gain: 90
Collector-emitter voltage: 60V
Frequency: 180MHz
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| NSS60600MZ4T1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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од. на суму грн.
| NSS60600MZ4T3G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 120...360
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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од. на суму грн.
| NSS60601MZ4T3G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 6A
Current gain: 120...360
Collector-emitter voltage: 60V
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN
Case: SOT223-4; TO261-4
Kind of package: reel; tape
Power dissipation: 2W
Collector current: 6A
Current gain: 120...360
Collector-emitter voltage: 60V
Frequency: 100MHz
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| LM431SACM32X |
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Виробник: ONSEMI
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.08 грн |
| GRULM431SCCM3X |
на замовлення 162000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.08 грн |
| SBAT54T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.4W
на замовлення 2011 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 12.85 грн |
| 48+ | 8.35 грн |
| 56+ | 7.22 грн |
| 100+ | 5.70 грн |
| 500+ | 4.22 грн |
| 1000+ | 3.68 грн |
| LM358DG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.6V/μs
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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| FCP099N60E |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37A; Idm: 111A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 111A
Gate charge: 88nC
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| NTHL099N60S5 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 33A; Idm: 95A; 184W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 33A
Power dissipation: 184W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 48nC
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| AFGB40T65RQDN |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 169.68W; D2PAK; automotive industry
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Power dissipation: 169.68W
Pulsed collector current: 160A
Application: automotive industry
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 51nC
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