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FDMS86163P FDMS86163P ONSEMI FDMS86163P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 59nC
On-state resistance: 36mΩ
Gate-source voltage: ±25V
Power dissipation: 104W
на замовлення 2799 шт:
термін постачання 14-30 дні (днів)
2+235.65 грн
5+159.52 грн
10+145.32 грн
25+130.29 грн
50+119.43 грн
100+115.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS8460 FDMS8460 ONSEMI FDMS8460.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Polarisation: unipolar
на замовлення 2994 шт:
термін постачання 14-30 дні (днів)
3+171.79 грн
5+131.96 грн
10+115.25 грн
25+106.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86252L FDMS86252L ONSEMI fdms86252l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 12A
On-state resistance: 0.11Ω
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 2608 шт:
термін постачання 14-30 дні (днів)
3+181.68 грн
5+134.46 грн
10+118.59 грн
50+87.69 грн
100+82.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS8333L FDMS8333L ONSEMI fdms8333l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2993 шт:
термін постачання 14-30 дні (днів)
9+46.77 грн
25+41.76 грн
100+37.58 грн
500+35.91 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDMS86520L FDMS86520L ONSEMI fdms86520l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2927 шт:
термін постачання 14-30 дні (днів)
3+151.10 грн
5+115.25 грн
10+102.73 грн
25+87.69 грн
100+80.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86200 FDMS86200 ONSEMI FDMS86200.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS2572 FDMS2572 ONSEMI fdms2572-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86300 FDMS86300 ONSEMI FDMS86300.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS5672 FDMS5672 ONSEMI FDMS5672.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86104 FDMS86104 ONSEMI FDMS86104.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS5352 FDMS5352 ONSEMI FDMS5352.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86200DC FDMS86200DC ONSEMI fdms86200dc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7608S ONSEMI fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86263P ONSEMI fdms86263p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3604S ONSEMI FDMS3604S-D.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
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FDMS1D2N03DSD ONSEMI fdms1d2n03dsd-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86500L ONSEMI fdms86500l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8622 ONSEMI fdms8622-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86350 ONSEMI fdms86350-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86181 ONSEMI fdms86181-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86252 ONSEMI fdms86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Power dissipation: 69W
Gate-source voltage: ±20V
Polarisation: unipolar
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FDMS86520 ONSEMI fdms86520-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS6673BZ ONSEMI fdms6673bz-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7694 ONSEMI fdms7694-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS037N08B ONSEMI fdms037n08b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7650 ONSEMI fdms7650-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0308AS ONSEMI fdms0308as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS0312S ONSEMI FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS039N08B ONSEMI fdms039n08b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8018 ONSEMI fdms8018-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8090 ONSEMI fdms8090-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86550 ONSEMI fdms86550-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Gate charge: 154nC
On-state resistance: 2.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 148A
Power dissipation: 156W
Pulsed drain current: 1021A
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FDMS2734 ONSEMI FDMS2734-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 258mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSA2275UMX ONSEMI fsa2275a-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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FSA2275AUMX ONSEMI fsa2275a-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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FSA2276UMX ONSEMI fsa2276-d.pdf Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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NC7WZ07P6X NC7WZ07P6X ONSEMI NC7WZ07.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
на замовлення 6361 шт:
термін постачання 14-30 дні (днів)
72+6.30 грн
90+4.68 грн
100+4.33 грн
500+4.21 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FSV10100V FSV10100V ONSEMI fsv10100v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 4740 шт:
термін постачання 14-30 дні (днів)
16+29.68 грн
17+25.31 грн
25+23.55 грн
100+20.88 грн
200+19.63 грн
250+19.13 грн
500+18.21 грн
1000+17.62 грн
2500+17.46 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2SK3557-6-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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В кошику  од. на суму  грн.
FDC5614P FDC5614P ONSEMI FDC5614P-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 24nC
Technology: PowerTrench®
на замовлення 2658 шт:
термін постачання 14-30 дні (днів)
8+58.46 грн
10+45.27 грн
11+39.75 грн
50+27.64 грн
100+23.64 грн
500+17.20 грн
1000+15.37 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
1N5359BRLG 1N5359BRLG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 4455 шт:
термін постачання 14-30 дні (днів)
15+31.48 грн
17+25.72 грн
19+23.05 грн
50+16.62 грн
100+14.36 грн
250+12.53 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
1N5359BG 1N5359BG ONSEMI 1N53xx.PDF description Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
на замовлення 849 шт:
термін постачання 14-30 дні (днів)
18+26.08 грн
22+19.71 грн
24+17.62 грн
50+13.70 грн
100+13.03 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BCP54 BCP54 ONSEMI bcp54-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
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GBU4M GBU4M ONSEMI GBU4x.PDF Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MC14532BDG MC14532BDG ONSEMI MC14532B-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Kind of package: tube
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 9
Kind of integrated circuit: 8bit; priority encoder
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
6+85.44 грн
10+71.82 грн
48+62.64 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
MC14532BDR2G ONSEMI mc14532b-d.pdf Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Number of channels: 1
Number of outputs: 3
Supply voltage: 3...18V
Number of inputs: 8
Kind of integrated circuit: priority encoder
Type of integrated circuit: digital
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NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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74VHC132MTCX 74VHC132MTCX ONSEMI 74VHC132-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Family: VHC
Kind of input: with Schmitt trigger
Number of inputs: 2
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
16+29.68 грн
23+18.96 грн
25+17.96 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
74VHC132M 74VHC132M ONSEMI 74VHC132-D.pdf 74vhc132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Case: SO14
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74VHC132MX 74VHC132MX ONSEMI 74VHC132-D.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Case: SO14
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MC74HC132ADR2G-Q ONSEMI mc74hc132a-d.pdf Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; SMD; SOIC14; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 155ns
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Family: HC
Supply voltage: 2...6V
Case: SOIC14
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MC74VHC132DG MC74VHC132DG ONSEMI mc74vhc132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
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MC74VHC132DR2G ONSEMI MC74VHC132-D.pdf Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Kind of integrated circuit: Schmitt trigger
Manufacturer series: VHC
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MC74VHC132DTR2G MC74VHC132DTR2G ONSEMI mc74vhc132-d.pdf Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
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MC7906CTG MC7906CTG ONSEMI MC7900-D.PDF Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -6V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Manufacturer series: MC7900
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output voltage: -6V
Heatsink thickness: 0.508...0.61mm
Tolerance: ±4%
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
13+35.08 грн
16+27.39 грн
25+24.22 грн
50+22.80 грн
100+21.97 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NCP5181DR2G NCP5181DR2G ONSEMI ncp5181-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Protection: undervoltage UVP
на замовлення 1710 шт:
термін постачання 14-30 дні (днів)
4+116.02 грн
5+99.39 грн
25+95.21 грн
100+90.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDD8445 FDD8445 ONSEMI FDD8445.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
On-state resistance: 16.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 79W
Drain current: 70A
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
на замовлення 1271 шт:
термін постачання 14-30 дні (днів)
7+66.56 грн
9+51.45 грн
10+50.11 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Mounting: SMD
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 89nC
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MC74AC253DR2G MC74AC253DR2G ONSEMI MC74AC253-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
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FDMS86163P FDMS86163P.pdf
FDMS86163P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8
Kind of channel: enhancement
Mounting: SMD
Case: PQFN8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 59nC
On-state resistance: 36mΩ
Gate-source voltage: ±25V
Power dissipation: 104W
на замовлення 2799 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+235.65 грн
5+159.52 грн
10+145.32 грн
25+130.29 грн
50+119.43 грн
100+115.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FDMS8460 FDMS8460.pdf
FDMS8460
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 49A; 104W; PQFN8
Kind of channel: enhancement
Kind of package: reel; tape
Mounting: SMD
Type of transistor: N-MOSFET
Technology: PowerTrench®
Case: PQFN8
Gate charge: 110nC
On-state resistance: 3.3mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 49A
Polarisation: unipolar
на замовлення 2994 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+171.79 грн
5+131.96 грн
10+115.25 грн
25+106.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86252L fdms86252l-d.pdf
FDMS86252L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 12A
On-state resistance: 0.11Ω
Power dissipation: 50W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 2608 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+181.68 грн
5+134.46 грн
10+118.59 грн
50+87.69 грн
100+82.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS8333L fdms8333l-d.pdf
FDMS8333L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 76A; Idm: 250A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 76A
Pulsed drain current: 250A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2993 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+46.77 грн
25+41.76 грн
100+37.58 грн
500+35.91 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FDMS86520L fdms86520l-d.pdf
FDMS86520L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; Idm: 60A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Pulsed drain current: 60A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2927 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+151.10 грн
5+115.25 грн
10+102.73 грн
25+87.69 грн
100+80.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86200 FDMS86200.pdf
FDMS86200
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 36A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 36A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS2572 fdms2572-d.pdf
FDMS2572
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; 78W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 78W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 103mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86300 FDMS86300.pdf
FDMS86300
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 122A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 122A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS5672 FDMS5672.pdf
FDMS5672
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22A; 78W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22A
Power dissipation: 78W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86104 FDMS86104.pdf
FDMS86104
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16A; 73W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16A
Power dissipation: 73W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS5352 FDMS5352.pdf
FDMS5352
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 49A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 49A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS86200DC fdms86200dc-d.pdf
FDMS86200DC
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; 125W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 40A
Power dissipation: 125W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7608S fdms7608s-d.pdf ONSM-S-A0003585462-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 22/30A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 22/30A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 13.9/8.6mΩ
Mounting: SMD
Gate charge: 24/30nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86263P fdms86263p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -4.4A; Idm: -70A; 2.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -4.4A
Pulsed drain current: -70A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS3604S FDMS3604S-D.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/40A; Idm: 40÷100A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 30/40A
Pulsed drain current: 40...100A
Power dissipation: 2.2/2.5W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 10.8/4mΩ
Mounting: SMD
Gate charge: 29/66nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
Semiconductor structure: asymmetric
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FDMS1D2N03DSD fdms1d2n03dsd-d.pdf
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86500L fdms86500l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 799A; 104W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 799A
Power dissipation: 104W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 165nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8622 fdms8622-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 16.5A; 31W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 16.5A
Power dissipation: 31W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86350 fdms86350-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 130A; 156W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 130A
Power dissipation: 156W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86181 fdms86181-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 78A; 125W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 78A
Power dissipation: 125W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86252 fdms86252-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Case: PQFN8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Power dissipation: 69W
Gate-source voltage: ±20V
Polarisation: unipolar
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FDMS86520 fdms86520-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 80A; 69W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Pulsed drain current: 80A
Power dissipation: 69W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS6673BZ fdms6673bz-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -52A; Idm: -422A; 73W; Power56
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -52A
Pulsed drain current: -422A
Power dissipation: 73W
Case: Power56
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7694 fdms7694-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 50A; 27W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 27W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS037N08B fdms037n08b-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS7650 fdms7650-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 169A; Idm: 1210A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 169A
Pulsed drain current: 1210A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 209nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS0308AS fdms0308as-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS0312S FAIR-S-A0002363702-1.pdf?t.download=true&u=5oefqw fdms0312s-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: PowerTrench®
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FDMS039N08B fdms039n08b-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8018 fdms8018-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS8090 fdms8090-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 59W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 40A
Power dissipation: 59W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDMS86550 fdms86550-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Case: Power56
Kind of package: reel; tape
Mounting: SMD
Kind of channel: enhancement
Gate charge: 154nC
On-state resistance: 2.6mΩ
Polarisation: unipolar
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 148A
Power dissipation: 156W
Pulsed drain current: 1021A
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FDMS2734 FDMS2734-D.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 14A; Idm: 30A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 14A
Pulsed drain current: 30A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 258mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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FSA2275UMX fsa2275a-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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FSA2275AUMX fsa2275a-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 2.5÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 2.5...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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FSA2276UMX fsa2276-d.pdf
Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP12; 1.65÷5.5VDC; reel,tape
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Kind of output: SPDT x2
Number of channels: 2
Supply voltage: 1.65...5.5V DC
Type of integrated circuit: analog switch
Case: UMLP12
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NC7WZ07P6X NC7WZ07.pdf
NC7WZ07P6X
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Kind of package: reel; tape
Kind of output: open drain
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...85°C
Quiescent current: 10µA
на замовлення 6361 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.30 грн
90+4.68 грн
100+4.33 грн
500+4.21 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
FSV10100V fsv10100v-d.pdf
FSV10100V
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.67V
Max. forward impulse current: 180A
Kind of package: reel; tape
на замовлення 4740 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.68 грн
17+25.31 грн
25+23.55 грн
100+20.88 грн
200+19.63 грн
250+19.13 грн
500+18.21 грн
1000+17.62 грн
2500+17.46 грн
Мінімальне замовлення: 16
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2SK3557-6-TB-E 2sk3557-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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2SK3557-7-TB-E 2sk3557-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
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FDC5614P FDC5614P-DTE.pdf
FDC5614P
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Gate charge: 24nC
Technology: PowerTrench®
на замовлення 2658 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+58.46 грн
10+45.27 грн
11+39.75 грн
50+27.64 грн
100+23.64 грн
500+17.20 грн
1000+15.37 грн
Мінімальне замовлення: 8
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1N5359BRLG description 1N53xx.PDF
1N5359BRLG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; reel,tape; CASE017AA; single diode; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 24V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Semiconductor structure: single diode
Manufacturer series: 1N53xxB
Tolerance: ±5%
на замовлення 4455 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+31.48 грн
17+25.72 грн
19+23.05 грн
50+16.62 грн
100+14.36 грн
250+12.53 грн
Мінімальне замовлення: 15
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1N5359BG description 1N53xx.PDF
1N5359BG
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 24V; bulk; CASE017AA; single diode; 1N53xxB
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Power dissipation: 5W
Tolerance: ±5%
Manufacturer series: 1N53xxB
Zener voltage: 24V
Kind of package: bulk
Case: CASE017AA
на замовлення 849 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+26.08 грн
22+19.71 грн
24+17.62 грн
50+13.70 грн
100+13.03 грн
Мінімальне замовлення: 18
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BCP54 bcp54-d.pdf
BCP54
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1.5A
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.5W
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GBU4M GBU4x.PDF
GBU4M
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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MC14532BDG MC14532B-D.pdf
MC14532BDG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,priority encoder; Ch: 1; IN: 9; CMOS; SMD; SOIC16
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Kind of package: tube
Number of channels: 1
Supply voltage: 3...18V DC
Number of inputs: 9
Kind of integrated circuit: 8bit; priority encoder
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+85.44 грн
10+71.82 грн
48+62.64 грн
Мінімальне замовлення: 6
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MC14532BDR2G mc14532b-d.pdf
Виробник: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; priority encoder; SMD; SOIC16; Ch: 1; IN: 8; 3÷18V
Mounting: SMD
Operating temperature: -55...125°C
Case: SOIC16
Number of channels: 1
Number of outputs: 3
Supply voltage: 3...18V
Number of inputs: 8
Kind of integrated circuit: priority encoder
Type of integrated circuit: digital
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NDB5060L ndb5060l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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74VHC132MTCX 74VHC132-D.pdf
74VHC132MTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C; VHC
Type of integrated circuit: digital
Number of channels: quad; 4
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Family: VHC
Kind of input: with Schmitt trigger
Number of inputs: 2
на замовлення 205 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.68 грн
23+18.96 грн
25+17.96 грн
Мінімальне замовлення: 16
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74VHC132M 74VHC132-D.pdf 74vhc132-d.pdf
74VHC132M
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: tube
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Case: SO14
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74VHC132MX 74VHC132-D.pdf
74VHC132MX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Kind of package: reel; tape
Mounting: SMD
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 20µA
Number of inputs: 2
Family: VHC
Supply voltage: 2...5.5V DC
Case: SO14
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MC74HC132ADR2G-Q mc74hc132a-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; SMD; SOIC14; 1uA
Type of integrated circuit: digital
Kind of integrated circuit: Schmitt trigger
Kind of gate: NAND
Kind of output: push-pull
Number of channels: 4
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 155ns
Quiescent current: 1µA
Number of outputs: 1
Number of inputs: 2
Family: HC
Supply voltage: 2...6V
Case: SOIC14
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MC74VHC132DG mc74vhc132-d.pdf
MC74VHC132DG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: tube
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
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MC74VHC132DR2G MC74VHC132-D.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; Schmitt trigger; NAND; Ch: 4; IN: 2; CMOS; SMD; SOIC14
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: VHC
Kind of integrated circuit: Schmitt trigger
Manufacturer series: VHC
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MC74VHC132DTR2G mc74vhc132-d.pdf
MC74VHC132DTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 20uA
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Family: VHC
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MC7906CTG MC7900-D.PDF
MC7906CTG
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -6V; 1A; TO220AB; THT; MC7900
Kind of package: tube
Manufacturer series: MC7900
Kind of voltage regulator: fixed; linear
Mounting: THT
Case: TO220AB
Type of integrated circuit: voltage regulator
Operating temperature: 0...125°C
Output voltage: -6V
Heatsink thickness: 0.508...0.61mm
Tolerance: ±4%
Number of channels: 1
Output current: 1A
Voltage drop: 1.3V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
13+35.08 грн
16+27.39 грн
25+24.22 грн
50+22.80 грн
100+21.97 грн
Мінімальне замовлення: 13
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NCP5181DR2G ncp5181-d.pdf
NCP5181DR2G
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -2.2÷1.4A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.2...1.4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 60ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Protection: undervoltage UVP
на замовлення 1710 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+116.02 грн
5+99.39 грн
25+95.21 грн
100+90.20 грн
Мінімальне замовлення: 4
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FDD8445 FDD8445.pdf
FDD8445
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 79W; DPAK
Mounting: SMD
On-state resistance: 16.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 79W
Drain current: 70A
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.6nC
на замовлення 1271 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+66.56 грн
9+51.45 грн
10+50.11 грн
Мінімальне замовлення: 7
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FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Mounting: SMD
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 89nC
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MC74AC253DR2G MC74AC253-D.pdf
MC74AC253DR2G
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,multiplexer; Ch: 2; IN: 5; CMOS; SMD; SOIC16; AC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; multiplexer
Number of channels: 2
Number of inputs: 5
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
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