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CAV93C66VE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 ONSEMI CAV93C66-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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FQP9N90C FQP9N90C ONSEMI FQP9N90C.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
2+319.29 грн
10+194.60 грн
50+182.07 грн
Мінімальне замовлення: 2
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FQPF9N90CT FQPF9N90CT ONSEMI FQPF9N90C-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
2+330.99 грн
5+219.65 грн
10+183.74 грн
Мінімальне замовлення: 2
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BYW29-200G BYW29-200G ONSEMI BYW29-200G.PDF description Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)
6+86.34 грн
7+69.32 грн
10+49.28 грн
50+41.76 грн
Мінімальне замовлення: 6
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TL331SN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331VSN4T3G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331SN4T1G ONSEMI tl331-d.pdf Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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MBR0530 ONSEMI MBR0530.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MUN5131DW1T1G MUN5131DW1T1G ONSEMI MUN5131DW1.PDF Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
120+3.87 грн
200+2.13 грн
500+1.89 грн
Мінімальне замовлення: 120
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SMUN5131DW1T1G ONSEMI dta123ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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BD13810STU BD13810STU ONSEMI BD136_138_140.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
16+29.95 грн
25+25.14 грн
120+22.22 грн
480+19.96 грн
Мінімальне замовлення: 16
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BD138G ONSEMI bd136-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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NRVB5100MFST1G ONSEMI mbr5100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
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MBR5H100MFST1G ONSEMI mbr5h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
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MBR8H100MFST1G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB10100MFST1G ONSEMI mbr10100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRTS30100MFST3G ONSEMI nrts30100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
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NRVB10100MFST3G ONSEMI mbr10100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
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NRVB8H100MFSWFT1G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT3G ONSEMI mbr8h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVTS30100MFST3G ONSEMI nrvts30100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
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MOC3163M MOC3163M ONSEMI MOC3163M.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
на замовлення 1082 шт:
термін постачання 14-30 дні (днів)
10+44.97 грн
12+36.00 грн
25+33.82 грн
50+31.57 грн
100+30.15 грн
500+25.72 грн
1000+24.22 грн
Мінімальне замовлення: 10
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MB2S MB2S ONSEMI MB6S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
12+37.78 грн
16+27.06 грн
18+23.64 грн
50+16.79 грн
Мінімальне замовлення: 12
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LM301ADR2G ONSEMI lm301a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Slew rate: 10V/μs
Input offset current: 50nA
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MC14555BDG MC14555BDG ONSEMI MC14555B-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
12+34.91 грн
Мінімальне замовлення: 12
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FSB50450US ONSEMI fsb50450us-d.pdf Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
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FSB50250AS ONSEMI fsb50250as-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
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FSB50250US ONSEMI fsb50250us-d.pdf Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
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FSB50450AS ONSEMI fsb50450at-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
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FSB50825AB ONSEMI fsb50825ab-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
DC supply current: 0.2mA
Operating voltage: 250V
Output current: 3.6A
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Mounting: THT
Case: DIP
Type of integrated circuit: driver
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FSB50825AS ONSEMI fsb50825as-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
DC supply current: 0.2mA
Operating voltage: 250V
Output current: 3.6A
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Mounting: SMD
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
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FDD6637 FDD6637 ONSEMI FDD6637.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
на замовлення 2363 шт:
термін постачання 14-30 дні (днів)
4+138.51 грн
5+101.06 грн
10+89.36 грн
50+65.14 грн
100+62.64 грн
Мінімальне замовлення: 4
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SZBZX84C10LT1G ONSEMI BZX84B_BZX84C.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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NTHL040N65S3HF ONSEMI nthl040n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
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NTLJS2103PTBG ONSEMI ntljs2103p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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MC14071BDG MC14071BDG ONSEMI MC140xxB.PDF Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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MC14071BDR2G MC14071BDR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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MC14071BDTR2G MC14071BDTR2G ONSEMI MC14001B-D.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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NLV14071BDTR2G ONSEMI mc14001b-d.pdf Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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MC74HC04ADR2G-Q ONSEMI mc74hc04a-d.pdf Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
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NUP2114UCMR6T1G ONSEMI nup2114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
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SNUP2114UCMR6T1G ONSEMI nup2114-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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CAT25040VI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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CAT25040VP2I-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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CAT25040YI-GT3 ONSEMI CAT25010-D.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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NCP59301DS30R4G ONSEMI NCP59300-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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NCP59301DS28R4G ONSEMI NCP59300-D.PDF Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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BUZ11-NR4941 BUZ11-NR4941 ONSEMI BUZ11.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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BUZ11-NR4941 ONSEMI buz11-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
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MC33067DWR2G ONSEMI mc34067-d.pdf Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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MC33067PG ONSEMI mc34067-d.pdf Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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1SMB5924BT3G 1SMB5924BT3G ONSEMI 1SMB59xxBT3G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2379 шт:
термін постачання 14-30 дні (днів)
19+24.28 грн
23+18.54 грн
25+16.79 грн
50+12.61 грн
100+11.11 грн
250+9.19 грн
500+8.18 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MMSZ5239BT1G MMSZ5239BT1G ONSEMI MMSZ52xxT1G.PDF Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1181 шт:
термін постачання 14-30 дні (днів)
56+8.09 грн
79+5.35 грн
139+3.01 грн
200+2.59 грн
500+2.15 грн
1000+1.90 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N5239BTR 1N5239BTR ONSEMI 1N52xxB.PDF Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
72+6.30 грн
117+3.59 грн
190+2.20 грн
500+1.61 грн
1000+1.44 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
MUR8100EG MUR8100EG ONSEMI MUR8100E.PDF Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
4+132.21 грн
10+81.01 грн
50+70.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDMS3660S FDMS3660S ONSEMI fdms3660s-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29/87nC
On-state resistance: 11/2.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30/30V
Drain current: 30/60A
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)
4+140.31 грн
10+92.70 грн
25+84.35 грн
Мінімальне замовлення: 4
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CAV93C66VE-GT3 CAV93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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CAV93C66YE-GT3 CAV93C66-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; Microwire; 512x8/256x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: Microwire
Memory organisation: 512x8/256x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
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FQP9N90C FQP9N90C.pdf
FQP9N90C
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; 205W; TO220AB
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Power dissipation: 205W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+319.29 грн
10+194.60 грн
50+182.07 грн
Мінімальне замовлення: 2
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FQPF9N90CT FQPF9N90C-D.PDF
FQPF9N90CT
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 2.8A; Idm: 32A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 2.8A
Pulsed drain current: 32A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+330.99 грн
5+219.65 грн
10+183.74 грн
Мінімальне замовлення: 2
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BYW29-200G description BYW29-200G.PDF
BYW29-200G
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 35ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward impulse current: 100A
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
на замовлення 1161 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.34 грн
7+69.32 грн
10+49.28 грн
50+41.76 грн
Мінімальне замовлення: 6
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TL331SN4T3G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331VSN4T3G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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TL331SN4T1G tl331-d.pdf
Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 1; 2÷36V; SMT; TSOP5; reel,tape
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 1
Operating voltage: 2...36V
Mounting: SMT
Case: TSOP5
Operating temperature: -40...125°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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MBR0530 MBR0530.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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MUN5131DW1T1G MUN5131DW1.PDF
MUN5131DW1T1G
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 0.187W; R1: 2.2kΩ
Mounting: SMD
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.187W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
120+3.87 грн
200+2.13 грн
500+1.89 грн
Мінімальне замовлення: 120
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SMUN5131DW1T1G dta123ed-d.pdf
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Mounting: SMD
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SC70-6; SC88; SOT363
Type of transistor: PNP x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.385W
Current gain: 8...15
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
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BD13810STU BD136_138_140.pdf
BD13810STU
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Power dissipation: 12.5W
Kind of package: tube
на замовлення 1157 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.95 грн
25+25.14 грн
120+22.22 грн
480+19.96 грн
Мінімальне замовлення: 16
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BD138G bd136-d.pdf
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Case: TO225
Current gain: 40...250
Mounting: THT
Power dissipation: 12.5W
Kind of package: bulk
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NRVB5100MFST1G mbr5100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. load current: 10A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.98V
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MBR5H100MFST1G mbr5h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 5A; reel,tape
Mounting: SMD
Load current: 5A
Max. forward impulse current: 200A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.73V
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MBR8H100MFST1G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB10100MFST1G mbr10100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRTS30100MFST3G nrts30100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Case: DFN5x6
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.68V
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NRVB10100MFST3G mbr10100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 10A; reel,tape
Mounting: SMD
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.95V
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
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NRVB30H100MFST3G mbr30h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Max. load current: 60A
Application: automotive industry
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NRVB8H100MFSWFT1G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVB8H100MFSWFT3G mbr8h100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 8A; reel,tape
Mounting: SMD
Load current: 8A
Max. load current: 16A
Max. forward impulse current: 75A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.9V
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NRVTS30100MFST3G nrvts30100mfs-d.pdf
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Mounting: SMD
Load current: 30A
Max. load current: 60A
Max. forward impulse current: 350A
Max. off-state voltage: 0.1kV
Application: automotive industry
Case: DFN5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.76V
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MOC3163M MOC3163M.pdf
MOC3163M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; zero voltage crossing driver; DIP6
Case: DIP6
Output voltage: 600V
Number of channels: 1
Mounting: THT
Trigger current: 5mA
Slew rate: 1kV/μs
Insulation voltage: 4.17kV
Manufacturer series: MOC3163M
Kind of output: zero voltage crossing driver
Type of optocoupler: optotriac
на замовлення 1082 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+44.97 грн
12+36.00 грн
25+33.82 грн
50+31.57 грн
100+30.15 грн
500+25.72 грн
1000+24.22 грн
Мінімальне замовлення: 10
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MB2S MB6S.pdf
MB2S
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.78 грн
16+27.06 грн
18+23.64 грн
50+16.79 грн
Мінімальне замовлення: 12
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LM301ADR2G lm301a-d.pdf
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 1; ±5÷15VDC; SO8; 7.5mV; reel,tape
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Mounting: SMT
Voltage supply range: ± 5...15V DC
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.25µA
Slew rate: 10V/μs
Input offset current: 50nA
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MC14555BDG MC14555B-D.pdf
MC14555BDG
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; binary 1 to 4,decoder,demultiplexer; Ch: 2; IN: 3
Operating temperature: -55...125°C
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Case: SOIC16
Kind of package: tube
Number of channels: 2
Supply voltage: 3...18V DC
Number of inputs: 3
Family: HEF4000B
Kind of integrated circuit: binary 1 to 4; decoder; demultiplexer
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+34.91 грн
Мінімальне замовлення: 12
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FSB50450US fsb50450us-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; Gull wing,PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
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FSB50250AS fsb50250as-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.2A; MOSFET; Uoper: 500V; 13.4W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Case: Gull wing; PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.2A
Operating voltage: 500V
Power dissipation: 13.4W
Insulation voltage: 1.5kV
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FSB50250US fsb50250us-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: driver; PowerSMD; MOSFET; Uoper: 500V; Uinsul: 1.5kV
Type of integrated circuit: driver
Case: PowerSMD
Integrated circuit features: MOSFET
Mounting: SMD
Operating voltage: 500V
Insulation voltage: 1.5kV
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FSB50450AS fsb50450at-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 1.5A; MOSFET; Uoper: 500V; 14W
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
DC supply current: 0.2mA
Output current: 1.5A
Operating voltage: 500V
Power dissipation: 14W
Insulation voltage: 1.5kV
Case: Gull wing; PowerSMD
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FSB50825AB fsb50825ab-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; DIP; 3.6A; MOSFET; Uoper: 250V; Usup: 150V; Uinsul: 1.5kV
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
DC supply current: 0.2mA
Operating voltage: 250V
Output current: 3.6A
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Mounting: THT
Case: DIP
Type of integrated circuit: driver
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FSB50825AS fsb50825as-d.pdf
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; Gull wing,PowerSMD; 3.6A; MOSFET; Uoper: 250V; 14.2W
Operating temperature: -40...150°C
Integrated circuit features: MOSFET
DC supply current: 0.2mA
Operating voltage: 250V
Output current: 3.6A
Power dissipation: 14.2W
Supply voltage: 150V
Insulation voltage: 1.5kV
Mounting: SMD
Case: Gull wing; PowerSMD
Type of integrated circuit: driver
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FDD6637 FDD6637.pdf
FDD6637
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -35V; -55A; 57W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: PowerTrench®
Mounting: SMD
Drain current: -55A
Drain-source voltage: -35V
Gate charge: 35nC
On-state resistance: 19mΩ
Gate-source voltage: ±25V
Power dissipation: 57W
Polarisation: unipolar
на замовлення 2363 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+138.51 грн
5+101.06 грн
10+89.36 грн
50+65.14 грн
100+62.64 грн
Мінімальне замовлення: 4
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SZBZX84C10LT1G BZX84B_BZX84C.PDF
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; SMD; reel,tape; SOT23; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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NTHL040N65S3HF nthl040n65s3hf-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 159nC
Kind of package: tube
Pulsed drain current: 162.5A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
On-state resistance: 32mΩ
Drain current: 45A
Gate-source voltage: ±30V
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NTLJS2103PTBG ntljs2103p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -7.7A; Idm: -24A; 3.3W; WDFN6
Drain current: -7.7A
Gate charge: 12.8nC
On-state resistance: 25mΩ
Power dissipation: 3.3W
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: WDFN6
Polarisation: unipolar
Pulsed drain current: -24A
Drain-source voltage: -12V
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MC14071BDG MC140xxB.PDF
MC14071BDG
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C; tube
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: tube
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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MC14071BDR2G MC14001B-D.pdf
MC14071BDR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: SO14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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MC14071BDTR2G MC14001B-D.pdf
MC14071BDTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Mounting: SMD
Operating temperature: -55...125°C
Number of channels: quad; 4
Kind of package: reel; tape
Case: TSSOP14
Delay time: 130ns
Number of inputs: 2
Supply voltage: 3...18V DC
Technology: CMOS
Type of integrated circuit: digital
Family: HEF4000B
Kind of gate: OR
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NLV14071BDTR2G mc14001b-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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MC74HC04ADR2G-Q mc74hc04a-d.pdf
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; inverter; Ch: 6; IN: 6; CMOS; SMD; SOIC14; -55÷125°C; 2uA
Type of integrated circuit: digital
Family: HC
Number of channels: 6
Kind of integrated circuit: inverter
Kind of output: push-pull
Mounting: SMD
Operating temperature: -55...125°C
Quiescent current: 2µA
Number of inputs: 6
Technology: CMOS
Supply voltage: 2...6V
Case: SOIC14
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NUP2114UCMR6T1G nup2114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape; ESD
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Version: ESD
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SNUP2114UCMR6T1G nup2114-d.pdf
Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; TSOP6; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: TSOP6
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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CAT25040VI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: SOIC8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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CAT25040VP2I-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; TDFN8
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TDFN8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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CAT25040YI-GT3 CAT25010-D.pdf
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Case: TSSOP8
Interface: SPI
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Memory: 4kb EEPROM
Clock frequency: 20MHz
Memory organisation: 512x8bit
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NCP59301DS30R4G NCP59300-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 3A; D2PAK-5; SMD; Ch: 1
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 3V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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NCP59301DS28R4G NCP59300-D.PDF
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 3A; D2PAK-5; SMD
Case: D2PAK-5
Mounting: SMD
Manufacturer series: NCP59300
Operating temperature: -40...125°C
Input voltage: 2.24...13.5V
Output voltage: 2.8V
Output current: 3A
Voltage drop: 0.5V
Tolerance: ±2.5%
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
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BUZ11-NR4941 BUZ11.pdf
BUZ11-NR4941
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 30A; 75W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
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BUZ11-NR4941 buz11-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 50V; 30A; 75W; TO220; single transistor
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: N
Drain-source voltage: 50V
Drain current: 30A
Power dissipation: 75W
Case: TO220
Gate-source voltage: 20V
On-state resistance: 40mΩ
Mounting: THT
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 200ns
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MC33067DWR2G mc34067-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; 300mA; SMD; -40÷85°C; 20V; 1MHz; Topology: flyback
Topology: flyback
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...85°C
Output current: 0.3A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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MC33067PG mc34067-d.pdf
Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: PMIC; PWM controller; 1.5A; THT; DIP16; -40÷85°C; 20V; 1MHz; MC
Manufacturer series: MC
Case: DIP16
Topology: flyback
Mounting: THT
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Operating temperature: -40...85°C
Output current: 1.5A
Output voltage: 5...5.2V
Input voltage: 20V
Frequency: 1MHz
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1SMB5924BT3G 1SMB59xxBT3G.PDF
1SMB5924BT3G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 9.1V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 2379 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
19+24.28 грн
23+18.54 грн
25+16.79 грн
50+12.61 грн
100+11.11 грн
250+9.19 грн
500+8.18 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
MMSZ5239BT1G MMSZ52xxT1G.PDF
MMSZ5239BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 1181 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
56+8.09 грн
79+5.35 грн
139+3.01 грн
200+2.59 грн
500+2.15 грн
1000+1.90 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
1N5239BTR 1N52xxB.PDF
1N5239BTR
Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
на замовлення 4400 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.30 грн
117+3.59 грн
190+2.20 грн
500+1.61 грн
1000+1.44 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
MUR8100EG MUR8100E.PDF
MUR8100EG
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 8A; tube; Ifsm: 100A; TO220AC; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 1.5V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 100ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+132.21 грн
10+81.01 грн
50+70.15 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDMS3660S fdms3660s-d.pdf
FDMS3660S
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Case: PQFN8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 29/87nC
On-state resistance: 11/2.6mΩ
Power dissipation: 2.2/2.5W
Gate-source voltage: ±20/±12V
Drain-source voltage: 30/30V
Drain current: 30/60A
на замовлення 2586 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+140.31 грн
10+92.70 грн
25+84.35 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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