| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| SZESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MARSZESD5Z12T1G | ONSEMI |
Category: Unclassified Description: MARSZESD5Z12T1G |
на замовлення 27000 шт: термін постачання 21-30 дні (днів) |
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| LM201AVDR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA Mounting: SMT Operating temperature: -40...105°C Case: SO8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Number of channels: single Input offset current: 10nA Input bias current: 75nA Input offset voltage: 2mV Slew rate: 10V/μs Voltage supply range: ± 5...20V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 553.8A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS004N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 338A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7SP14P5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-5 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: single; 1 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NC7WP14P6X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-6 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: dual; 2 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14504BDTG | ONSEMI |
Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14538BDR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJE5852G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Polarisation: bipolar Mounting: THT Type of transistor: PNP Case: TO220AB Power dissipation: 80W Collector current: 8A Current gain: 15 Collector-emitter voltage: 400V Kind of package: tube |
на замовлення 89 шт: термін постачання 21-30 дні (днів) |
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| MOC3083SVM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MOC3083VM | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS2D3N04XMT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 688A Power dissipation: 63W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74AC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC Type of integrated circuit: digital Kind of integrated circuit: decoder; demultiplexer Number of channels: 2 Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP14 Operating temperature: -40...85°C Family: AC Kind of package: reel; tape Quiescent current: 40µA Manufacturer series: AC Number of inputs: 1 |
на замовлення 1819 шт: термін постачання 21-30 дні (днів) |
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| NSVJ6904DSB6T1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Type of transistor: N-JFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.7W Case: CPH6 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Semiconductor structure: common source Gate current: 10mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCS2001SN2T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SOT23-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCS2001SN1T1G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SOT23-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCS2001SQ2T2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SC70-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SO14 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: quad |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LM2595DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 120W Case: TO3P Current gain: 100...320 Mounting: THT Kind of package: tube Frequency: 85MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: D2PAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC33067DWR2G | ONSEMI |
Category: UnclassifiedDescription: MC33067DWR2G |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Output current: 0.5A Number of channels: 1 Output voltage: 5V Application: automotive industry Type of integrated circuit: voltage regulator Case: DFN10 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FMB2222A | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMYS016N10MCLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 264A Power dissipation: 32W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 162A Pulsed drain current: 916A Power dissipation: 246W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 178nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| GRUMMUN2216LT1G | ONSEMI |
Category: Unclassified Description: GRUMMUN2216LT1G |
на замовлення 30000 шт: термін постачання 21-30 дні (днів) |
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| NSI45020JZT1G | ONSEMI |
Category: LED driversDescription: IC: driver Type of integrated circuit: driver |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1169 шт: термін постачання 21-30 дні (днів) |
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| SZ1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDD86380-F085 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 50A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| LMV331SN3T1G | ONSEMI |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA Type of integrated circuit: comparator Kind of comparator: universal Number of comparators: 1 Mounting: SMT Case: TSOP5 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Delay time: 1.5µs Input bias current: 1nA Operating voltage: 2.7...5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FAN9611MX | ONSEMI |
Category: Integrated circuits - othersDescription: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V Type of integrated circuit: PMIC Kind of integrated circuit: PFC controller Case: SO16 Mounting: SMD Operating temperature: -40...125°C Frequency: 525Hz Supply voltage: 9...18V Output current: -2...1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74ACT241DWR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: TTL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Kind of output: 3-state Supply voltage: 4.5...5.5V DC Family: ACT Kind of package: reel; tape Manufacturer series: ACT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14538BDTR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Technology: TTL Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Quiescent current: 600µA Supply voltage: 3...18V DC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14538BDWG | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC14538BDWR2G | ONSEMI |
Category: MultivibratorsDescription: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16 Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator Number of channels: 2 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: HEF4000B Operating temperature: -55...125°C Quiescent current: 5µA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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MBRS4201T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward voltage: 0.61V Load current: 4A Max. forward impulse current: 100A Max. off-state voltage: 200V Case: SMC Kind of package: reel; tape |
на замовлення 2635 шт: термін постачання 21-30 дні (днів) |
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| MC74HC1G14DFT1G-F22038 | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 162000 шт: термін постачання 21-30 дні (днів) |
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| MJD3055T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MJD3055RLG | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NJVMJD3055T4G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 20W Case: DPAK Current gain: 20...100 Mounting: SMD Kind of package: reel; tape Frequency: 2MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVMJD012N06CLTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8 Case: LFPAK8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 11.5nC On-state resistance: 11.9mΩ Power dissipation: 21W Drain current: 42A Drain-source voltage: 60V Pulsed drain current: 153A Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NVTFS015N04CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27A Pulsed drain current: 93A Power dissipation: 7.4W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 17.3mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74VHC1G14DBVT1G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
на замовлення 12000 шт: термін постачання 21-30 дні (днів) |
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| NVMYS011N04CTWG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 173A Power dissipation: 9.1W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DTC114EM3T5G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 10kΩ Current gain: 35...60 Quantity in set/package: 8000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSBC114EPDP6T5G | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 408mW Case: SOT963 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Quantity in set/package: 8000pcs. Base-emitter resistor: 10kΩ Kind of transistor: BRT; complementary pair |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
MC74VHCT50ADR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT Technology: CMOS; TTL Case: SO14 Mounting: SMD Kind of package: reel; tape Manufacturer series: VHCT Operating temperature: -55...125°C Quiescent current: 40µA Number of channels: 6 Supply voltage: 2...5.5V DC Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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1SMB5918BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 10333 шт: термін постачання 21-30 дні (днів) |
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1SMB5920BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 1928 шт: термін постачання 21-30 дні (днів) |
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1SMB5935BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode Type of diode: Zener Case: SMB Mounting: SMD Semiconductor structure: single diode Kind of package: reel; tape Power dissipation: 3W Tolerance: ±5% Zener voltage: 27V Manufacturer series: 1SMB59xxBT3G |
на замовлення 3320 шт: термін постачання 21-30 дні (днів) |
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1SMB5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 6019 шт: термін постачання 21-30 дні (днів) |
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1SMB5925BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 11264 шт: термін постачання 21-30 дні (днів) |
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1SMB5931BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 606 шт: термін постачання 21-30 дні (днів) |
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| SZESD5Z12T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| MARSZESD5Z12T1G |
на замовлення 27000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.28 грн |
| LM201AVDR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
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| NVMTS0D4N04CLTXG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 553.8A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 553.8A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NVTFS004N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 338A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 338A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| NC7SP14P5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
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| NC7WP14P6X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
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| MC14504BDTG |
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Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
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| MC14538BDR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
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| MJE5852G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
на замовлення 89 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.59 грн |
| 6+ | 171.83 грн |
| 15+ | 162.28 грн |
| MOC3083SVM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
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| MOC3083VM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
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| NVMFWS2D3N04XMT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 74AC139MTCX |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AC
Number of inputs: 1
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 1; SMD; TSSOP14; AC; AC
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: AC
Kind of package: reel; tape
Quiescent current: 40µA
Manufacturer series: AC
Number of inputs: 1
на замовлення 1819 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 73.68 грн |
| 12+ | 33.57 грн |
| 25+ | 28.48 грн |
| 50+ | 25.30 грн |
| 100+ | 22.67 грн |
| 250+ | 19.73 грн |
| 1000+ | 17.98 грн |
| NSVJ6904DSB6T1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
Category: Multi channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
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| NCS2001SN2T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS2001SN1T1G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS2001SQ2T2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS20034DR2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
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| LM2595DSADJR4G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| MJB44H11G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 50MHz
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| MJB44H11T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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| NJW44H11G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 120W
Case: TO3P
Current gain: 100...320
Mounting: THT
Kind of package: tube
Frequency: 85MHz
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| NJVMJB44H11T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: D2PAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
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| MC33067DWR2G |
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на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 48.66 грн |
| NCV8535MN500R2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
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| FMB2222A |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NVMFS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWS016N10MCLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMYS016N10MCLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 264A; 32W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 264A
Power dissipation: 32W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDB024N08BL7 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 162A
Pulsed drain current: 916A
Power dissipation: 246W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 162A
Pulsed drain current: 916A
Power dissipation: 246W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 178nC
Kind of package: reel; tape
Kind of channel: enhancement
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| GRUMMUN2216LT1G |
на замовлення 30000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 1.62 грн |
| NSI45020JZT1G |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 21.59 грн |
| 1SMB5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1169 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.27 грн |
| 27+ | 14.96 грн |
| 31+ | 13.05 грн |
| 50+ | 10.82 грн |
| 100+ | 9.31 грн |
| 500+ | 6.68 грн |
| 1000+ | 6.44 грн |
| SZ1SMB5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Application: automotive industry
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| FDD86380-F085 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; 75W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| LMV331SN3T1G |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.5us; 2.7÷5V; SMT; TSOP5; Iio: 1nA
Type of integrated circuit: comparator
Kind of comparator: universal
Number of comparators: 1
Mounting: SMT
Case: TSOP5
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Delay time: 1.5µs
Input bias current: 1nA
Operating voltage: 2.7...5V
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| FAN9611MX |
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Виробник: ONSEMI
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 525Hz
Supply voltage: 9...18V
Output current: -2...1A
Category: Integrated circuits - others
Description: IC: PMIC; PFC controller; SO16; -40÷125°C; 9÷18V
Type of integrated circuit: PMIC
Kind of integrated circuit: PFC controller
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 525Hz
Supply voltage: 9...18V
Output current: -2...1A
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| MC74ACT241DWR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: TTL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: ACT
Kind of package: reel; tape
Manufacturer series: ACT
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| MC14538BDTR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Technology: TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of package: reel; tape
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; TTL; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Technology: TTL
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Quiescent current: 600µA
Supply voltage: 3...18V DC
Kind of package: reel; tape
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| MC14538BDWG |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
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| MC14538BDWR2G |
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Виробник: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HEF4000B
Operating temperature: -55...125°C
Quiescent current: 5µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: HEF4000B
Operating temperature: -55...125°C
Quiescent current: 5µA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 28.36 грн |
| MBRS4201T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.61V
Load current: 4A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: SMC
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 200V; 4A; 35ns; reel,tape
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward voltage: 0.61V
Load current: 4A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Case: SMC
Kind of package: reel; tape
на замовлення 2635 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 106.23 грн |
| 10+ | 77.80 грн |
| 20+ | 48.92 грн |
| 25+ | 48.84 грн |
| 53+ | 46.22 грн |
| 1000+ | 44.47 грн |
| MC74HC1G14DFT1G-F22038 |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 162000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.25 грн |
| MJD3055T4G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| MJD3055RLG |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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| NJVMJD3055T4G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Application: automotive industry
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| NVMJD012N06CLTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; Idm: 153A; 21W; LFPAK8
Case: LFPAK8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 11.5nC
On-state resistance: 11.9mΩ
Power dissipation: 21W
Drain current: 42A
Drain-source voltage: 60V
Pulsed drain current: 153A
Kind of channel: enhancement
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| NVTFS015N04CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27A; Idm: 93A; 7.4W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27A
Pulsed drain current: 93A
Power dissipation: 7.4W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 17.3mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MC74VHC1G14DBVT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 12000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.70 грн |
| NVMYS011N04CTWG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 173A; 9.1W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 173A
Power dissipation: 9.1W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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| DTC114EM3T5G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Quantity in set/package: 8000pcs.
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| NSBC114EPDP6T5G |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 408mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT; complementary pair
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| MC74VHCT50ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Technology: CMOS; TTL
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS,TTL; SMD; SO14; VHCT
Technology: CMOS; TTL
Case: SO14
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: VHCT
Operating temperature: -55...125°C
Quiescent current: 40µA
Number of channels: 6
Supply voltage: 2...5.5V DC
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 43.69 грн |
| 12+ | 33.57 грн |
| 14+ | 29.75 грн |
| 25+ | 25.54 грн |
| 46+ | 20.60 грн |
| 125+ | 19.49 грн |
| 1SMB5918BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 10333 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 25+ | 16.39 грн |
| 30+ | 13.60 грн |
| 39+ | 10.34 грн |
| 100+ | 7.16 грн |
| 500+ | 6.84 грн |
| 1SMB5920BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 6.2V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 1928 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.85 грн |
| 33+ | 12.41 грн |
| 39+ | 10.26 грн |
| 57+ | 7.00 грн |
| 100+ | 6.20 грн |
| 1SMB5935BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 27V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Case: SMB
Mounting: SMD
Semiconductor structure: single diode
Kind of package: reel; tape
Power dissipation: 3W
Tolerance: ±5%
Zener voltage: 27V
Manufacturer series: 1SMB59xxBT3G
на замовлення 3320 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.13 грн |
| 27+ | 15.27 грн |
| 30+ | 13.52 грн |
| 50+ | 11.46 грн |
| 100+ | 10.02 грн |
| 118+ | 7.95 грн |
| 323+ | 7.56 грн |
| 500+ | 7.24 грн |
| 1SMB5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 6019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.85 грн |
| 29+ | 14.00 грн |
| 33+ | 12.09 грн |
| 50+ | 8.27 грн |
| 100+ | 7.16 грн |
| 137+ | 6.84 грн |
| 377+ | 6.44 грн |
| 1SMB5925BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 10V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 11264 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.84 грн |
| 22+ | 18.93 грн |
| 25+ | 16.39 грн |
| 50+ | 11.30 грн |
| 100+ | 9.63 грн |
| 108+ | 8.67 грн |
| 295+ | 8.19 грн |
| 1SMB5931BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 606 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.84 грн |
| 20+ | 20.68 грн |
| 24+ | 16.86 грн |
| 50+ | 10.18 грн |
| 100+ | 8.35 грн |
| 120+ | 7.88 грн |
| 250+ | 7.56 грн |
| 328+ | 7.40 грн |









