| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| NV25256DWHFT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...150°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV25256MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 10MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV25256VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV25256YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
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| BAS116TT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT416 Max. forward voltage: 1.25V Kind of package: reel; tape Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBAS116LT1G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NSVBAS116LT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5956BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA Type of diode: Zener Power dissipation: 3W Zener voltage: 200V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
на замовлення 5232 шт: термін постачання 21-30 дні (днів) |
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| FSB50550AS | ONSEMI |
Category: Motor and PWM driversDescription: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V Operating temperature: -40...125°C Mounting: SMD Output current: 2A Case: Gull wing; PowerSMD Supply voltage: 300V Output voltage: 500V Frequency: 15kHz Type of integrated circuit: driver Integrated circuit features: MOSFET |
на замовлення 15750 шт: термін постачання 21-30 дні (днів) |
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| SMF05CT2G | ONSEMI |
Category: Diodes - UnclassifiedDescription: SMF05CT2G |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| NTPF125N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 24A Pulsed drain current: 67A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NC7S32M5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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NL17SG32DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SC88A Supply voltage: 0.9...3.6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: NL Manufacturer series: MiniGate |
на замовлення 2988 шт: термін постачання 21-30 дні (днів) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Case: DFN5x6 Mounting: SMD Kind of package: reel; tape Drain current: 50A Drain-source voltage: 60V Gate charge: 20nC Type of transistor: N-MOSFET On-state resistance: 8.8mΩ Power dissipation: 1.8W Gate-source voltage: ±20V Pulsed drain current: 440A Kind of channel: enhancement Polarisation: unipolar |
на замовлення 1654 шт: термін постачання 21-30 дні (днів) |
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NTP165N65S3H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 53A Power dissipation: 142W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.165Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
на замовлення 86 шт: термін постачання 21-30 дні (днів) |
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| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NUP4301MR6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD Type of diode: diode arrays Mounting: SMD Case: SC74 Number of channels: 4 Kind of package: reel; tape Version: ESD Max. off-state voltage: 70V |
на замовлення 2750 шт: термін постачання 21-30 дні (днів) |
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FDP22N50N | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.2A Power dissipation: 312.5W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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| FGH75T65SQD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SHD-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 123nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SQDT-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 128nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FGH75T65SHDT-F155 | ONSEMI |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 227W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 227W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 225A Mounting: THT Gate charge: 123nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1076P065G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 0.65A Frequency: 59...71kHz Mounting: SMD Case: DIP7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C On-state resistance: 6.9Ω Operating voltage: 6.3...10V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NCP3065DR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 3...40V DC Output current: 1.5A Case: SO8 Mounting: SMD Topology: boost; buck; buck-boost Operating temperature: -40...125°C Kind of package: reel; tape Frequency: 110...190kHz Number of channels: 1 Operating voltage: 3...40V DC |
на замовлення 1992 шт: термін постачання 21-30 дні (днів) |
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MC14543BDG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4 Mounting: SMD Kind of integrated circuit: BCD to 7-segment; decoder; display driver Technology: CMOS Type of integrated circuit: digital Case: SO16 Number of channels: 1 Number of inputs: 4 |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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NTR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 On-state resistance: 155mΩ Power dissipation: 0.6W Drain current: 1.6A Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar |
на замовлення 2809 шт: термін постачання 21-30 дні (днів) |
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NVR5198NLT1G | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23 Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: SOT23 Gate charge: 5.1nC On-state resistance: 0.205Ω Power dissipation: 0.4W Drain current: 1.2A Gate-source voltage: ±20V Pulsed drain current: 27A Drain-source voltage: 60V Polarisation: unipolar Application: automotive industry |
на замовлення 1493 шт: термін постачання 21-30 дні (днів) |
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NTR0202PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.4A Gate charge: 2.18nC Power dissipation: 0.225W On-state resistance: 0.55Ω Gate-source voltage: ±20V Case: SOT23 |
на замовлення 988 шт: термін постачання 21-30 дні (днів) |
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| FOD8802A | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8 Case: SO8 Mounting: SMD Max. off-state voltage: 6V Collector-emitter voltage: 75V Insulation voltage: 2.5kV Slew rate: 10kV/μs Manufacturer series: FOD8802 Type of optocoupler: optocoupler Kind of output: transistor Turn-on time: 6µs Turn-off time: 40µs Number of channels: 2 CTR@If: 35-230%@1mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| FDMS7698 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 50A Power dissipation: 29W Case: Power56 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NTMTSC4D3N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8 Kind of package: reel; tape Pulsed drain current: 900A Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Case: TDFNW8 Gate charge: 79nC On-state resistance: 4.45mΩ Power dissipation: 293W Gate-source voltage: ±20V Drain-source voltage: 150V Drain current: 174A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC14001UBDG | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Mounting: SMD Kind of gate: NOR Case: SO14 Number of channels: quad; 4 Kind of package: tube Operating temperature: -55...125°C Delay time: 100ns Number of inputs: 2 Supply voltage: 3...18V DC Family: HEF4000B Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| NTBLS4D0N15MC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 316W Case: H-PSOF8L Mounting: SMD Kind of package: reel; tape Gate charge: 90.4nC Kind of channel: enhancement On-state resistance: 4.4mΩ Drain current: 187A Pulsed drain current: 2255A Drain-source voltage: 150V Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NSVRB521S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Max. forward impulse current: 1A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SC3647S-TD-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89 Mounting: SMD Case: SOT89 Kind of package: reel; tape Collector current: 2A Power dissipation: 1.5W Collector-emitter voltage: 100V Current gain: 140...280 Frequency: 120MHz Polarisation: bipolar Type of transistor: NPN |
на замовлення 739 шт: термін постачання 21-30 дні (днів) |
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| FSA2269L10X | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA Number of channels: 2 Mounting: SMD Kind of package: reel; tape Kind of output: SPDT x2 Technology: TTL Operating temperature: -40...85°C Quiescent current: 500nA Supply voltage: 1.65...4.5V DC Case: MicroPak10 Type of integrated circuit: analog switch |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74LVXT4051DR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA Type of integrated circuit: digital Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SO16 Supply voltage: 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 80µA Technology: CMOS; TTL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MC74LVXT4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS; TTL Manufacturer series: LVXT Family: LVXT Number of inputs: 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KSA1281YTA | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed Polarisation: bipolar Case: TO92 Formed Mounting: THT Type of transistor: PNP Power dissipation: 1W Collector current: 2A Collector-emitter voltage: 50V Current gain: 120...240 Frequency: 100MHz Kind of package: Ammo Pack |
на замовлення 1797 шт: термін постачання 21-30 дні (днів) |
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| FOD817B3S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Kind of output: transistor Number of channels: 1 Number of pins: 4 Max. off-state voltage: 6V Collector-emitter voltage: 70V Insulation voltage: 5kV Case: SMD4 Type of optocoupler: optocoupler |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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| NTTFS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N5388BRLG | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA Type of diode: Zener Power dissipation: 5W Zener voltage: 200V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.5µA Manufacturer series: 1N53xxB |
на замовлення 3650 шт: термін постачання 21-30 дні (днів) |
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MBRM120LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.45V Load current: 1A Max. load current: 2A Max. off-state voltage: 20V Max. forward impulse current: 50A Case: DO216AA |
на замовлення 2387 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C Application: automotive industry |
на замовлення 3505 шт: термін постачання 21-30 дні (днів) |
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| SZBZX84C4V7ET1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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MOC3031M | ONSEMI |
Category: OptotriacsDescription: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 250V Kind of output: triac; zero voltage crossing driver Case: DIP6 Trigger current: 15mA Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Manufacturer series: MOC303XM |
на замовлення 1753 шт: термін постачання 21-30 дні (днів) |
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| NCP51820AMNTWG | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side; low-side Technology: GaN Case: QFN15 Output current: -2...1A Supply voltage: 9...17V DC Mounting: SMD Operating temperature: -40...125°C Voltage class: 650V |
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В кошику од. на суму грн. | |||||||||||||||||
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HUF75339P3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Case: TO220AB Technology: UltraFET® Polarisation: unipolar Gate charge: 130nC On-state resistance: 12mΩ Gate-source voltage: ±20V Drain-source voltage: 55V Drain current: 75A Power dissipation: 200W Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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MC33164P-5G | ONSEMI |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...10V DC Case: TO92 Operating temperature: -40...125°C Mounting: THT DC supply current: 32µA Maximum output current: 50mA Threshold on-voltage: 4.33V Kind of package: bulk Number of channels: 1 |
на замовлення 1201 шт: термін постачання 21-30 дні (днів) |
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BD13810STU | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO Kind of package: tube Type of transistor: PNP Mounting: THT Case: TO126ISO Collector current: 1.5A Power dissipation: 12.5W Collector-emitter voltage: 60V Current gain: 63...160 Polarisation: bipolar |
на замовлення 1241 шт: термін постачання 21-30 дні (днів) |
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FDC6561AN | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 152mΩ Mounting: SMD Gate charge: 3.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 857 шт: термін постачання 21-30 дні (днів) |
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FDC6333C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 2.5/-2A Power dissipation: 0.96W Case: SuperSOT-6 Gate-source voltage: ±16/±25V On-state resistance: 150/220mΩ Mounting: SMD Gate charge: 6.6/5.7nC Kind of package: reel; tape Kind of channel: enhancement Kind of transistor: complementary pair Technology: PowerTrench® |
на замовлення 1950 шт: термін постачання 21-30 дні (днів) |
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| NXH450N65L4Q2F2S1G | ONSEMI |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC Collector current: 450A Case: PIM40 Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Type of semiconductor module: IGBT Application: for UPS; Inverter Technology: SiC Max. off-state voltage: 650V Topology: NTC thermistor; three-level inverter; single-phase Mechanical mounting: screw |
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В кошику од. на суму грн. | |||||||||||||||||
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MC78M15CDTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 17.5...30V |
на замовлення 722 шт: термін постачання 21-30 дні (днів) |
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MC78M15CTG | ONSEMI |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 15V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 17.5...30V |
на замовлення 1040 шт: термін постачання 21-30 дні (днів) |
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| US1DFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV Type of diode: rectifying Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward voltage: 0.95V Load current: 1A Max. off-state voltage: 200V Kind of package: reel; tape Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NRVUS1DFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward voltage: 0.95V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 200V Kind of package: reel; tape Application: automotive industry Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUF2101MT1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape Kind of package: reel; tape Case: TSOP6 Type of diode: TVS array Mounting: SMD Number of channels: 3 Application: USB Semiconductor structure: bidirectional |
на замовлення 2180 шт: термін постачання 21-30 дні (днів) |
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FDD770N15A | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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| NV25256DWHFT3G |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...150°C
Access time: 40ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
| NV25256MUW3VTBG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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В кошику
од. на суму грн.
| CAV25256VE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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| CAV25256YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
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| BAS116LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.48 грн |
| 64+ | 6.48 грн |
| 92+ | 4.49 грн |
| 107+ | 3.85 грн |
| BAS116TT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT416; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT416
Max. forward voltage: 1.25V
Kind of package: reel; tape
Features of semiconductor devices: small signal
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| SBAS116LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.25V; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 80nA
Power dissipation: 0.225W
Kind of package: reel; tape
Application: automotive industry
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| NSVBAS116LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.2A; 3us; SOT23; Ufmax: 1.1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| 1N5956BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 200V; reel,tape; CASE59; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
на замовлення 5232 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.60 грн |
| 50+ | 8.77 грн |
| 100+ | 8.28 грн |
| 250+ | 8.04 грн |
| FSB50550AS |
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Виробник: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Category: Motor and PWM drivers
Description: IC: driver; Gull wing,PowerSMD; 2A; 500V; MOSFET; 15kHz; Usup: 300V
Operating temperature: -40...125°C
Mounting: SMD
Output current: 2A
Case: Gull wing; PowerSMD
Supply voltage: 300V
Output voltage: 500V
Frequency: 15kHz
Type of integrated circuit: driver
Integrated circuit features: MOSFET
на замовлення 15750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 450+ | 474.25 грн |
| SMF05CT2G |
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на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.36 грн |
| NTPF125N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 67A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 67A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
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| NC7S32M5X |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; SMD; SC70-5; 2÷6VDC; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 74+ | 5.58 грн |
| 82+ | 5.00 грн |
| 99+ | 4.17 грн |
| 128+ | 3.21 грн |
| 250+ | 2.83 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.47 грн |
| NL17SG32DFT2G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; SC88A; MiniGate; -55÷125°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SC88A
Supply voltage: 0.9...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: NL
Manufacturer series: MiniGate
на замовлення 2988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.20 грн |
| 36+ | 11.48 грн |
| 45+ | 9.25 грн |
| 52+ | 7.94 грн |
| 100+ | 6.76 грн |
| 250+ | 5.51 грн |
| 1000+ | 4.13 грн |
| NTMFS5C670NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Case: DFN5x6
Mounting: SMD
Kind of package: reel; tape
Drain current: 50A
Drain-source voltage: 60V
Gate charge: 20nC
Type of transistor: N-MOSFET
On-state resistance: 8.8mΩ
Power dissipation: 1.8W
Gate-source voltage: ±20V
Pulsed drain current: 440A
Kind of channel: enhancement
Polarisation: unipolar
на замовлення 1654 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 181.93 грн |
| 5+ | 106.61 грн |
| 25+ | 96.77 грн |
| 100+ | 83.65 грн |
| 500+ | 76.27 грн |
| NTP165N65S3H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 53A; 142W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 53A
Power dissipation: 142W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 86 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 205.83 грн |
| 10+ | 193.53 грн |
| FDMS007N08LC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NUP4301MR6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
Category: Protection diodes - arrays
Description: Diode: diode arrays; SC74; Ch: 4; reel,tape; ESD
Type of diode: diode arrays
Mounting: SMD
Case: SC74
Number of channels: 4
Kind of package: reel; tape
Version: ESD
Max. off-state voltage: 70V
на замовлення 2750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.43 грн |
| 27+ | 15.75 грн |
| 31+ | 13.53 грн |
| 40+ | 10.33 грн |
| 100+ | 6.81 грн |
| 500+ | 6.23 грн |
| FDP22N50N |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.19 грн |
| 10+ | 225.52 грн |
| FGH75T65SQD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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| FGH75T65SHD-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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| FGH75T65SQDT-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
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| FGH75T65SHDT-F155 |
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Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
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| NCP1076P065G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 0.65A
Frequency: 59...71kHz
Mounting: SMD
Case: DIP7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
On-state resistance: 6.9Ω
Operating voltage: 6.3...10V DC
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| NCP3065DR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 3÷40VDC; 1.5A; SO8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 3...40V DC
Output current: 1.5A
Case: SO8
Mounting: SMD
Topology: boost; buck; buck-boost
Operating temperature: -40...125°C
Kind of package: reel; tape
Frequency: 110...190kHz
Number of channels: 1
Operating voltage: 3...40V DC
на замовлення 1992 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.68 грн |
| 10+ | 68.06 грн |
| 25+ | 62.32 грн |
| MC14543BDG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Mounting: SMD
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 1
Number of inputs: 4
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,display driver; Ch: 1; IN: 4
Mounting: SMD
Kind of integrated circuit: BCD to 7-segment; decoder; display driver
Technology: CMOS
Type of integrated circuit: digital
Case: SO16
Number of channels: 1
Number of inputs: 4
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.68 грн |
| 20+ | 21.16 грн |
| 25+ | 19.27 грн |
| 48+ | 18.21 грн |
| 96+ | 17.14 грн |
| 144+ | 16.65 грн |
| 288+ | 15.91 грн |
| 480+ | 15.42 грн |
| NTR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.6A; 0.6W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
On-state resistance: 155mΩ
Power dissipation: 0.6W
Drain current: 1.6A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Polarisation: unipolar
на замовлення 2809 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 23.84 грн |
| 32+ | 12.87 грн |
| 40+ | 10.50 грн |
| 100+ | 7.95 грн |
| 250+ | 6.89 грн |
| 500+ | 6.31 грн |
| 1000+ | 5.74 грн |
| NVR5198NLT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.2A; Idm: 27A; 0.4W; SOT23
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Gate charge: 5.1nC
On-state resistance: 0.205Ω
Power dissipation: 0.4W
Drain current: 1.2A
Gate-source voltage: ±20V
Pulsed drain current: 27A
Drain-source voltage: 60V
Polarisation: unipolar
Application: automotive industry
на замовлення 1493 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.14 грн |
| 23+ | 18.37 грн |
| 31+ | 13.61 грн |
| 40+ | 10.33 грн |
| NTR0202PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.4A; 0.225W; SOT23
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.4A
Gate charge: 2.18nC
Power dissipation: 0.225W
On-state resistance: 0.55Ω
Gate-source voltage: ±20V
Case: SOT23
на замовлення 988 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.07 грн |
| 72+ | 5.74 грн |
| 89+ | 4.63 грн |
| 100+ | 4.18 грн |
| 500+ | 3.40 грн |
| FOD8802A |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; Uinsul: 2.5kV; Uce: 75V; SO8
Case: SO8
Mounting: SMD
Max. off-state voltage: 6V
Collector-emitter voltage: 75V
Insulation voltage: 2.5kV
Slew rate: 10kV/μs
Manufacturer series: FOD8802
Type of optocoupler: optocoupler
Kind of output: transistor
Turn-on time: 6µs
Turn-off time: 40µs
Number of channels: 2
CTR@If: 35-230%@1mA
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| FDMS7698 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 50A; 29W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 29W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMTSC4D3N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 174A; Idm: 900A; 293W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 293W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 174A
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| MC14001UBDG | ![]() |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Mounting: SMD
Kind of gate: NOR
Case: SO14
Number of channels: quad; 4
Kind of package: tube
Operating temperature: -55...125°C
Delay time: 100ns
Number of inputs: 2
Supply voltage: 3...18V DC
Family: HEF4000B
Technology: CMOS
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| NTBLS4D0N15MC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 2255A; 316W
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 316W
Case: H-PSOF8L
Mounting: SMD
Kind of package: reel; tape
Gate charge: 90.4nC
Kind of channel: enhancement
On-state resistance: 4.4mΩ
Drain current: 187A
Pulsed drain current: 2255A
Drain-source voltage: 150V
Gate-source voltage: ±20V
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| NSVRB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Max. forward impulse current: 1A
Application: automotive industry
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| 2SC3647S-TD-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 1.5W; SOT89
Mounting: SMD
Case: SOT89
Kind of package: reel; tape
Collector current: 2A
Power dissipation: 1.5W
Collector-emitter voltage: 100V
Current gain: 140...280
Frequency: 120MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 739 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.82 грн |
| 12+ | 35.51 грн |
| 100+ | 22.96 грн |
| 250+ | 19.68 грн |
| 500+ | 19.11 грн |
| FSA2269L10X |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.5VDC; reel,tape; 500nA
Number of channels: 2
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT x2
Technology: TTL
Operating temperature: -40...85°C
Quiescent current: 500nA
Supply voltage: 1.65...4.5V DC
Case: MicroPak10
Type of integrated circuit: analog switch
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| MC74LVXT4051DR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
Category: Analog multiplexers and switches
Description: IC: digital; demultiplexer,multiplexer; Ch: 1; SO16; 2.5÷6VDC; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SO16
Supply voltage: 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 80µA
Technology: CMOS; TTL
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| MC74LVXT4051DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS; TTL
Manufacturer series: LVXT
Family: LVXT
Number of inputs: 8
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| KSA1281YTA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 120...240
Frequency: 100MHz
Kind of package: Ammo Pack
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 1W; TO92 Formed
Polarisation: bipolar
Case: TO92 Formed
Mounting: THT
Type of transistor: PNP
Power dissipation: 1W
Collector current: 2A
Collector-emitter voltage: 50V
Current gain: 120...240
Frequency: 100MHz
Kind of package: Ammo Pack
на замовлення 1797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.51 грн |
| 15+ | 28.05 грн |
| 50+ | 19.52 грн |
| 100+ | 16.65 грн |
| 250+ | 13.69 грн |
| 500+ | 11.89 грн |
| 1000+ | 11.32 грн |
| FOD817B3S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Kind of output: transistor
Number of channels: 1
Number of pins: 4
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5kV
Case: SMD4
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Kind of output: transistor
Number of channels: 1
Number of pins: 4
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5kV
Case: SMD4
Type of optocoupler: optocoupler
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 7.95 грн |
| NTTFS030N06CTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1N5388BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 200V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 200V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
на замовлення 3650 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.38 грн |
| 18+ | 22.80 грн |
| 20+ | 20.67 грн |
| 100+ | 14.02 грн |
| 500+ | 12.63 грн |
| MBRM120LT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO216AA; SMD; 20V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Load current: 1A
Max. load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 50A
Case: DO216AA
на замовлення 2387 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.31 грн |
| 30+ | 14.10 грн |
| 100+ | 11.97 грн |
| SZBZX84C4V7LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 3505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.71 грн |
| 55+ | 7.54 грн |
| 65+ | 6.40 грн |
| 110+ | 3.76 грн |
| 141+ | 2.93 грн |
| 500+ | 1.78 грн |
| 1000+ | 1.54 грн |
| SZBZX84C4V7ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| MOC3031M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Manufacturer series: MOC303XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC303XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 250V
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Manufacturer series: MOC303XM
на замовлення 1753 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.18 грн |
| 10+ | 41.33 грн |
| 50+ | 35.51 грн |
| 100+ | 33.62 грн |
| NCP51820AMNTWG |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,low-side,gate driver; GaN; QFN15
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Technology: GaN
Case: QFN15
Output current: -2...1A
Supply voltage: 9...17V DC
Mounting: SMD
Operating temperature: -40...125°C
Voltage class: 650V
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| HUF75339P3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Case: TO220AB
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 12mΩ
Gate-source voltage: ±20V
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 200W
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 87.75 грн |
| 10+ | 81.19 грн |
| 50+ | 77.09 грн |
| MC33164P-5G | ![]() |
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Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: THT
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Number of channels: 1
на замовлення 1201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.62 грн |
| 15+ | 27.88 грн |
| 25+ | 27.23 грн |
| 100+ | 27.14 грн |
| BD13810STU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Kind of package: tube
Type of transistor: PNP
Mounting: THT
Case: TO126ISO
Collector current: 1.5A
Power dissipation: 12.5W
Collector-emitter voltage: 60V
Current gain: 63...160
Polarisation: bipolar
на замовлення 1241 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.41 грн |
| 25+ | 24.68 грн |
| 120+ | 21.81 грн |
| 480+ | 19.60 грн |
| FDC6561AN |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 152mΩ
Mounting: SMD
Gate charge: 3.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 857 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 61.82 грн |
| 10+ | 41.17 грн |
| 50+ | 28.37 грн |
| 100+ | 24.27 грн |
| 250+ | 20.09 грн |
| 500+ | 17.71 грн |
| FDC6333C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Technology: PowerTrench®
на замовлення 1950 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 53.87 грн |
| 10+ | 45.92 грн |
| 50+ | 35.92 грн |
| 100+ | 29.85 грн |
| 500+ | 18.37 грн |
| 750+ | 16.48 грн |
| 1000+ | 15.34 грн |
| 1500+ | 14.84 грн |
| NXH450N65L4Q2F2S1G |
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Виробник: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Application: for UPS; Inverter
Technology: SiC
Max. off-state voltage: 650V
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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| MC78M15CDTG | ![]() |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 17.5...30V
на замовлення 722 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 19.43 грн |
| 27+ | 15.50 грн |
| 30+ | 13.78 грн |
| 75+ | 11.97 грн |
| 150+ | 11.15 грн |
| 300+ | 10.66 грн |
| MC78M15CTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 17.5...30V
на замовлення 1040 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.62 грн |
| 16+ | 26.98 грн |
| 25+ | 24.60 грн |
| 50+ | 23.04 грн |
| 100+ | 21.65 грн |
| 250+ | 20.09 грн |
| 500+ | 18.94 грн |
| 1000+ | 18.04 грн |
| US1DFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 950mV
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. off-state voltage: 200V
Kind of package: reel; tape
Case: SOD123F
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| NRVUS1DFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123F
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 50ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SOD123F
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од. на суму грн.
| NUF2101MT1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; TSOP6; Ch: 3; reel,tape
Kind of package: reel; tape
Case: TSOP6
Type of diode: TVS array
Mounting: SMD
Number of channels: 3
Application: USB
Semiconductor structure: bidirectional
на замовлення 2180 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.68 грн |
| 17+ | 25.09 грн |
| 25+ | 22.80 грн |
| 50+ | 21.16 грн |
| 100+ | 19.68 грн |
| 250+ | 18.62 грн |
| FDD770N15A |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 441.57 грн |
























