| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| FCP110N65F | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 35A Power dissipation: 357W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 105A Gate charge: 98nC |
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| MMBT3904TT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
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| NTHL060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 33A Case: TO247-3 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 143A Technology: SiC Gate charge: 74nC On-state resistance: 49mΩ Power dissipation: 88W |
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| NVBG060N065SC1 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: D2PAK-7 Gate-source voltage: -5...18V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 130A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 85W |
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| NTH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -8...22V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W |
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| NVH4L060N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Case: TO247-4 Gate-source voltage: -5...18V Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 152A Features of semiconductor devices: Kelvin terminal Technology: SiC Gate charge: 74nC On-state resistance: 50mΩ Power dissipation: 88W |
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MC79L05ACPRMG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -5V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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MC79L05ACPRPG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -5V Output current: 0.1A Case: TO92 Mounting: THT Number of channels: 1 Kind of package: Ammo Pack |
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| NCV78L12ABDR2G | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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NCV78L12ABPG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Number of channels: 1 Application: automotive industry |
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| LMV358DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: SO8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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| LMV358DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: Micro8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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| MMBT2907AM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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| NSVMMBT2907AM3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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| NSVMMBT2907AWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry |
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| NVB110N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
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| NVHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
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| NVHL110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 58nC |
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| NVMFWD024N06CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 85A Power dissipation: 14W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
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MMBF4392LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA Mounting: SMD Type of transistor: N-JFET Case: SOT23 Kind of package: reel; tape Polarisation: unipolar Gate-source voltage: -30V Drain current: 25mA Gate current: 50mA Power dissipation: 0.225W Drain-source voltage: 30V On-state resistance: 60Ω |
на замовлення 964 шт: термін постачання 21-30 дні (днів) |
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BC550CBU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: TO92 Current gain: 420...800 Mounting: THT Kind of package: bulk Frequency: 300MHz |
на замовлення 6388 шт: термін постачання 21-30 дні (днів) |
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MB8S | ONSEMI |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 0.5A Max. forward impulse current: 35A Case: SO4 Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 1067 шт: термін постачання 21-30 дні (днів) |
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| LP2950ACDT-5.0G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: tube Number of channels: 1 |
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| LP2950ACDT-5RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| LP2950CDT-3.0RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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LP2950CZ-3.0RAG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: reel; tape Number of channels: 1 |
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В кошику од. на суму грн. | ||||||||||||||||||
| LM2904DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: Micro8 Operating temperature: -40...105°C Integrated circuit features: low power Input offset voltage: 10mV Kind of package: reel; tape Input offset current: 200nA |
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| NVBLS1D5N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 300A Pulsed drain current: 900A Power dissipation: 165W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 131nC Kind of package: reel; tape Kind of channel: enhancement |
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| NVBLS1D7N10MCTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 265A Pulsed drain current: 900A Power dissipation: 152W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 1.8mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement |
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2N3906TAR | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 250MHz |
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2N3906TF | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
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2N3906TFR | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: reel; tape Frequency: 250MHz |
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| NSV9435T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ Type of transistor: PNP Polarisation: bipolar Power dissipation: 0.72W Case: SOT223 Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Collector-emitter voltage: 300mV Collector current: 3A Quantity in set/package: 1000pcs. Pulsed collector current: 5A Current gain: 220 Base resistor: 10kΩ Frequency: 110MHz Application: automotive industry |
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| LMV358MUTAG | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: dual; 2 Mounting: SMT Case: uDFN8 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Voltage supply range: 2.7...5V DC |
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| NSVBCP69T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 1A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 85...375 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| FGHL75T65MQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 149nC Kind of package: tube |
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| FGHL75T65LQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 234W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 793nC Kind of package: tube |
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| FGHL75T65MQD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 145nC Kind of package: tube |
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| AFGHL75T65SQDT | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 136nC Kind of package: tube |
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| AFGHL75T65SQ | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
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| AFGHL75T65SQDC | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 75A Power dissipation: 188W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 139nC Kind of package: tube |
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| LM1117MPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
на замовлення 3630 шт: термін постачання 21-30 дні (днів) |
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| LM1117IMPX-ADJNOPB | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...13.8V Output current: 0.8A Case: SOT223 Mounting: SMD Number of channels: 1 Kind of package: reel; tape |
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| SE5532AD8R2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual Type of integrated circuit: operational amplifier Integrated circuit features: low noise Case: SO8 Number of channels: dual; 2 Mounting: SMT Kind of package: reel; tape Operating temperature: -55...125°C Input offset current: 150nA Input bias current: 0.8µA Input offset voltage: 4mV Voltage supply range: ± 3...20V DC Slew rate: 9V/μs Bandwidth: 10MHz |
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| MMBT4403M3T5G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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| MMBT4403WT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
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MM3Z18VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
на замовлення 5451 шт: термін постачання 21-30 дні (днів) |
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| NTH4L075N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 120A Power dissipation: 74W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 68mΩ Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| MMBT4401M3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| MMBT4401WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
| NSVMMBT4401WT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| LMV324DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: TSSOP14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Voltage supply range: 2.7...5V DC Input offset current: 1nA |
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| LMV324DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Case: SO14 Operating temperature: -40...85°C Slew rate: 1V/μs Integrated circuit features: low voltage; rail-to-rail output; voltage feedback Input offset voltage: 9mV Kind of package: reel; tape Input bias current: 1nA Voltage supply range: 2.7...5V DC Input offset current: 1nA |
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В кошику од. на суму грн. | |||||||||||||||||||
| FCPF380N65FL1-F154 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.2A Pulsed drain current: 30.6A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
 |
BC847BWT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 2380 шт: термін постачання 21-30 дні (днів) |
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| FDP025N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 265A Pulsed drain current: 1060A Power dissipation: 395W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 174nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTHL025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-3 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
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В кошику од. на суму грн. | |||||||||||||||||||
| NTH4L025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164nC Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVH4L025N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 323A Power dissipation: 174W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 24mΩ Mounting: THT Gate charge: 164C Kind of package: tube Kind of channel: enhancement Technology: SiC Features of semiconductor devices: Kelvin terminal |
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В кошику од. на суму грн. | |||||||||||||||||||
| NVMYS025N06CLTWG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Pulsed drain current: 103A Power dissipation: 7.6W Case: LFPAK56 Gate-source voltage: ±20V On-state resistance: 27.5mΩ Mounting: SMD Gate charge: 5.8nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. |
| FCP110N65F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 35A; Idm: 105A; 357W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 35A
Power dissipation: 357W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 105A
Gate charge: 98nC
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| MMBT3904TT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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В кошику
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| NTHL060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 143A
Technology: SiC
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 33A; Idm: 143A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 33A
Case: TO247-3
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 143A
Technology: SiC
Gate charge: 74nC
On-state resistance: 49mΩ
Power dissipation: 88W
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В кошику
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| NVBG060N065SC1 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: D2PAK-7
Gate-source voltage: -5...18V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 130A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 85W
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В кошику
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| NTH4L060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -8...22V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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В кошику
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| NVH4L060N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 152A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Case: TO247-4
Gate-source voltage: -5...18V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 152A
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Gate charge: 74nC
On-state resistance: 50mΩ
Power dissipation: 88W
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В кошику
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| MC79L05ACPRMG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| MC79L05ACPRPG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -5V
Output current: 0.1A
Case: TO92
Mounting: THT
Number of channels: 1
Kind of package: Ammo Pack
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| NCV78L12ABDR2G |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| NCV78L12ABPG |
|
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Number of channels: 1
Application: automotive industry
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| LMV358DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; SO8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| LMV358DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; Micro8; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: Micro8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| MMBT2907AM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| NSVMMBT2907AM3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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| NSVMMBT2907AWT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Application: automotive industry
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| NVB110N65S3F |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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| NVHL110N65S3F |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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| NVHL110N65S3HF |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 58nC
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| NVMFWD024N06CT1G |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MMBF4392LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -30V
Drain current: 25mA
Gate current: 50mA
Power dissipation: 0.225W
Drain-source voltage: 30V
On-state resistance: 60Ω
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 25mA; 0.225W; SOT23; Igt: 50mA
Mounting: SMD
Type of transistor: N-JFET
Case: SOT23
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: -30V
Drain current: 25mA
Gate current: 50mA
Power dissipation: 0.225W
Drain-source voltage: 30V
On-state resistance: 60Ω
на замовлення 964 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.73 грн |
| 25+ | 16.64 грн |
| 50+ | 12.52 грн |
| 100+ | 11.12 грн |
| 500+ | 8.40 грн |
| BC550CBU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.5W
Case: TO92
Current gain: 420...800
Mounting: THT
Kind of package: bulk
Frequency: 300MHz
на замовлення 6388 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.76 грн |
| 54+ | 7.75 грн |
| 61+ | 6.84 грн |
| 100+ | 4.81 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.67 грн |
| 5000+ | 3.02 грн |
| MB8S |
|
Виробник: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 800V; If: 0.5A; Ifsm: 35A; SO4; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: SO4
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 1067 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.16 грн |
| 16+ | 26.12 грн |
| 18+ | 23.90 грн |
| 50+ | 17.80 грн |
| 100+ | 15.08 грн |
| 500+ | 10.63 грн |
| 1000+ | 10.13 грн |
| LP2950ACDT-5.0G | |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: tube
Number of channels: 1
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| LP2950ACDT-5RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LP2950CDT-3.0RKG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| LP2950CZ-3.0RAG |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.1A; TO92; THT; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: reel; tape
Number of channels: 1
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| LM2904DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Integrated circuit features: low power
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; Micro8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: Micro8
Operating temperature: -40...105°C
Integrated circuit features: low power
Input offset voltage: 10mV
Kind of package: reel; tape
Input offset current: 200nA
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| NVBLS1D5N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 165W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300A; Idm: 900A; 165W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 300A
Pulsed drain current: 900A
Power dissipation: 165W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 131nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVBLS1D7N10MCTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Power dissipation: 152W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 265A; Idm: 900A; 152W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 265A
Pulsed drain current: 900A
Power dissipation: 152W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 2N3906TAR |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 250MHz
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| 2N3906TF |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| 2N3906TFR |
|
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 100...300
Mounting: THT
Kind of package: reel; tape
Frequency: 250MHz
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| NSV9435T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 300mV; 3A; 720mW; SOT223; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.72W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Collector-emitter voltage: 300mV
Collector current: 3A
Quantity in set/package: 1000pcs.
Pulsed collector current: 5A
Current gain: 220
Base resistor: 10kΩ
Frequency: 110MHz
Application: automotive industry
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| LMV358MUTAG |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷5VDC; uDFN8; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: dual; 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
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| NSVBCP69T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 85...375
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| FGHL75T65MQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 149nC
Kind of package: tube
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| FGHL75T65LQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 234W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 234W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 793nC
Kind of package: tube
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| FGHL75T65MQD |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
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| AFGHL75T65SQDT |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
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| AFGHL75T65SQ |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| AFGHL75T65SQDC |
|
Виробник: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 139nC
Kind of package: tube
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| LM1117MPX-ADJNOPB |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
на замовлення 3630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.38 грн |
| 15+ | 28.02 грн |
| 17+ | 25.13 грн |
| 25+ | 21.92 грн |
| 50+ | 20.02 грн |
| 100+ | 18.46 грн |
| 250+ | 17.06 грн |
| 500+ | 16.15 грн |
| 1000+ | 15.57 грн |
| LM1117IMPX-ADJNOPB |
|
Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷13.8V; 0.8A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...13.8V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
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| SE5532AD8R2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; ±3÷20VDC; SO8; 4mV; Ch: dual
Type of integrated circuit: operational amplifier
Integrated circuit features: low noise
Case: SO8
Number of channels: dual; 2
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -55...125°C
Input offset current: 150nA
Input bias current: 0.8µA
Input offset voltage: 4mV
Voltage supply range: ± 3...20V DC
Slew rate: 9V/μs
Bandwidth: 10MHz
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| MMBT4403M3T5G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MMBT4403WT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| MM3Z18VT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
на замовлення 5451 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.99 грн |
| 82+ | 5.03 грн |
| 152+ | 2.72 грн |
| 200+ | 2.06 грн |
| 500+ | 1.19 грн |
| 1000+ | 0.99 грн |
| 1500+ | 0.94 грн |
| NTH4L075N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 26A; Idm: 120A; 74W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 120A
Power dissipation: 74W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| MMBT4401M3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.64W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| MMBT4401WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| NSVMMBT4401WT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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| LMV324DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; TSSOP14; 9mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: TSSOP14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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| LMV324DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷5VDC; SO14; 9mV; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Case: SO14
Operating temperature: -40...85°C
Slew rate: 1V/μs
Integrated circuit features: low voltage; rail-to-rail output; voltage feedback
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
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| FCPF380N65FL1-F154 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| BC847BWT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 2380 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.32 грн |
| 120+ | 3.46 грн |
| 136+ | 3.05 грн |
| 183+ | 2.26 грн |
| 205+ | 2.02 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.43 грн |
| FDP025N06 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
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| NTHL025N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
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| NTH4L025N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NVH4L025N065SC1 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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| NVMYS025N06CLTWG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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