| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| 1N5232BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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| 1N5233BTR | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6V Kind of package: reel; tape Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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| 1N5234C | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: bulk Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode |
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| 1N5235B | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N52xxB |
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| MMBTA14 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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MBRS1100T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Kind of package: reel; tape |
на замовлення 8170 шт: термін постачання 14-30 дні (днів) |
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| MMBTA63 | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Frequency: 125MHz Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| MMBTA64 | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 1.2A Power dissipation: 0.35W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Frequency: 125MHz |
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В кошику од. на суму грн. | |||||||||||||||||||
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MMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
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| SMMBTA64LT1G | ONSEMI |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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MJE5852G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Type of transistor: PNP Mounting: THT Case: TO220AB Collector current: 8A Current gain: 15 Power dissipation: 80W Collector-emitter voltage: 400V Polarisation: bipolar Kind of package: tube |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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| NCV5652MUTWG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV Kind of package: reel; tape Type of integrated circuit: operational amplifier Number of channels: dual; 2 Case: uDFN12 Mounting: SMT Operating temperature: -40...125°C Input offset current: 100nA Input bias current: 1µA Input offset voltage: 15mV Slew rate: 1.5V/μs Voltage supply range: 3.3...13.2V DC Bandwidth: 350kHz |
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HUF75652G3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247 Kind of package: tube Kind of channel: enhancement Case: TO247 Mounting: THT Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Gate charge: 475nC On-state resistance: 8mΩ Gate-source voltage: ±20V Drain current: 75A Drain-source voltage: 100V Power dissipation: 515W |
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В кошику од. на суму грн. | ||||||||||||||||||
| MBR1560CT | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 7.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.65V Max. forward impulse current: 15A Kind of package: tube Max. load current: 15A |
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В кошику од. на суму грн. | |||||||||||||||||||
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MBRA160T3G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.475V Max. load current: 2.1A Kind of package: reel; tape |
на замовлення 3837 шт: термін постачання 14-30 дні (днів) |
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| NSR02100HT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.95V Max. forward impulse current: 2A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
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1SMA5914BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
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В кошику од. на суму грн. | ||||||||||||||||||
| SZ1SMA5914BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| BC848CLT3G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN Type of transistor: NPN |
на замовлення 80000 шт: термін постачання 14-30 дні (днів) |
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MM74HCT273WM | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Mounting: SMD Case: SO20-W Manufacturer series: HCT Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Trigger: positive-edge-triggered |
на замовлення 313 шт: термін постачання 14-30 дні (днів) |
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| FNB40560 | ONSEMI |
Category: MOSFET/IGBT driversDescription: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V Type of integrated circuit: driver Output current: 5A DC supply current: 3.65mA Mounting: THT Operating temperature: -40...150°C Operating voltage: 600V Supply voltage: 300V Insulation voltage: 2kV Power dissipation: 29W Collector-emitter voltage: 600V |
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| NCV1117ST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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1N4148TR | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.2A; reel,tape; Ifsm: 1A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Kind of package: reel; tape Max. forward impulse current: 1A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 4ns Capacitance: 4pF Power dissipation: 0.5W |
на замовлення 2684 шт: термін постачання 14-30 дні (днів) |
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| MC33269DTRK-3.3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 0.8A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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| MCH6541-TL-E | ONSEMI |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A Kind of transistor: complementary pair Mounting: SMD Case: MCPH6 Type of transistor: NPN / PNP Kind of package: reel; tape Power dissipation: 0.55W Collector current: 0.7A Collector-emitter voltage: 30V Current gain: 300...800 Frequency: 540MHz Polarisation: bipolar |
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| N24C008C4DTG | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 1kx8bit Mounting: SMD Case: WLCSP4 Kind of interface: serial Operating temperature: -40...85°C Access time: 400ns |
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NDS9945 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
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FDS5672 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
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| NTP125N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Mounting: THT Type of transistor: N-MOSFET Case: TO220-3 Kind of package: tube Polarisation: unipolar Drain current: 22A Drain-source voltage: 600V Gate charge: 37.3nC On-state resistance: 0.125Ω Gate-source voltage: ±30V Pulsed drain current: 77A Power dissipation: 152W Kind of channel: enhancement |
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FQA90N15 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
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FQA90N15-F109 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 63.5A Pulsed drain current: 360A Power dissipation: 375W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: THT Gate charge: 285nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||||||
| FCPF067N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 44A Pulsed drain current: 110A Power dissipation: 46W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVBAV99WT3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.215A Reverse recovery time: 6ns Semiconductor structure: double series Case: SC70 Max. forward voltage: 1V Kind of package: reel; tape Application: automotive industry Features of semiconductor devices: small signal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NCP398FCCT1G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; surge stopper; WLCSP4 Kind of integrated circuit: surge stopper Case: WLCSP4 Mounting: SMD Application: USB port ESD protection Type of integrated circuit: driver Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCP398MUTBG | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: driver; surge stopper; uDFN6 Kind of integrated circuit: surge stopper Case: uDFN6 Mounting: SMD Application: USB port ESD protection Type of integrated circuit: driver Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJ4502G | ONSEMI |
Category: PNP THT transistorsDescription: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 90V Collector current: 30A Power dissipation: 200W Case: TO3; TO204 Current gain: 25...100 Mounting: THT Kind of package: in-tray Frequency: 2MHz |
на замовлення 69 шт: термін постачання 14-30 дні (днів) |
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FDB2532 | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 56A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 82nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 429 шт: термін постачання 14-30 дні (днів) |
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MMSZ5268BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 82V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 566 шт: термін постачання 14-30 дні (днів) |
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| MMBZ5268BLT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 82V; SMD; SOT23; reel,tape; single diode Kind of package: reel; tape Mounting: SMD Semiconductor structure: single diode Case: SOT23 Type of diode: Zener Power dissipation: 0.3W Tolerance: ±5% Zener voltage: 82V Manufacturer series: MMBZ52xxBLT1G |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZMMSZ5268BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 82V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| FDPF17N60NT | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Pulsed drain current: 68A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
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| NTHL017N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 75A; Idm: 431A; 625W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 75A Pulsed drain current: 431A Power dissipation: 625W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 17mΩ Mounting: THT Gate charge: 265nC Kind of package: tube Kind of channel: enhancement |
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| BAV99 | ONSEMI |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 8A Power dissipation: 0.35W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74HC365ADTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Case: TSSOP16 Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Supply voltage: 2...6V DC Kind of output: 3-state Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 6 |
на замовлення 2345 шт: термін постачання 14-30 дні (днів) |
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MC74HC365ADR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; hex Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape Mounting: SMD Supply voltage: 2...6V DC Kind of output: 3-state Technology: CMOS Manufacturer series: HC Family: HC Number of channels: 6 |
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| MC74HC365ADTR2G-Q | ONSEMI |
Category: Shift registersDescription: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Case: TSSOP16 Operating temperature: -55...125°C Mounting: SMD Quiescent current: 40µA Supply voltage: 2...6V Number of inputs: 6 Kind of output: 3-state Technology: CMOS Family: HC Number of channels: 6 |
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В кошику од. на суму грн. | |||||||||||||||||||
| NCP139AFCT05ADJT2G | ONSEMI |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6 Voltage drop: 80mV Output current: 1A Output voltage: 0.5...3V Input voltage: 0.5...5.5V Number of channels: 1 Tolerance: ±1% Manufacturer series: NCP139 Kind of voltage regulator: adjustable; LDO; linear Type of integrated circuit: voltage regulator Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C |
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| NCP139AFCT110T2G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD Voltage drop: 80mV Output current: 1A Output voltage: 1.1V Input voltage: 1.1...5.5V Number of channels: 1 Tolerance: ±1% Manufacturer series: NCP139 Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Case: WLCSP6 Mounting: SMD Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||||||||
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MC74VHCT139ADR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD Number of channels: 2 Number of inputs: 3 Supply voltage: 4.5...5.5V DC Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer Family: VHCT Manufacturer series: VHCT Type of integrated circuit: digital Kind of package: reel; tape Case: SOIC16 Technology: CMOS; TTL Mounting: SMD Operating temperature: -55...125°C |
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| NSR01L30MXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky switching Case: X3DFN2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.46V Max. forward impulse current: 2A Kind of package: reel; tape |
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| NSR01F30MXT5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky switching Case: X3DFN2 Mounting: SMD Max. off-state voltage: 30V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. forward impulse current: 2A Kind of package: reel; tape |
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NCP1608BDR2G | ONSEMI |
Category: Drivers - integrated circuitsDescription: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost Topology: boost Case: SO8 Type of integrated circuit: PMIC Mounting: SMD Operating temperature: -55...125°C Output current: 500...800mA Number of channels: 1 Operating voltage: 9.5...20V DC |
на замовлення 1906 шт: термін постачання 14-30 дні (днів) |
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| NCS21671SQ100T2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 35kHz; Ch: 1; 1.8÷5.5VDC; SC70-6 Operating temperature: -40...125°C Mounting: SMT Input offset current: 300nA Input offset voltage: 10µV Input bias current: 35µA Slew rate: 0.3V/μs Voltage supply range: 1.8...5.5V DC Gain: 100V/V Bandwidth: 35kHz Type of integrated circuit: instrumentation amplifier Case: SC70-6 Integrated circuit features: rail-to-rail output Kind of package: reel; tape Number of channels: single; 1 |
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| NUP2128WTT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape Type of diode: TVS Max. off-state voltage: 26.5V Breakdown voltage: 27.5...35.5V Semiconductor structure: bidirectional Case: SC70 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||||
| SZNUP2124MXWTBG | ONSEMI |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape Type of diode: TVS Max. off-state voltage: 24V Breakdown voltage: 26...33V Semiconductor structure: bidirectional Case: XDFNW3 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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| SZNUP2128WTT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape Type of diode: TVS Max. off-state voltage: 26.5V Breakdown voltage: 27.5...35.5V Semiconductor structure: bidirectional Case: SC70 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
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MBRD5H100T4G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape Max. load current: 10A |
на замовлення 2391 шт: термін постачання 14-30 дні (днів) |
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1SMA5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G |
на замовлення 2442 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMA5917BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SMA Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMA59xxBT3G Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||||
| MC3302DR2G | ONSEMI |
Category: ComparatorsDescription: IC: comparator; 3÷30V; SMT; OUT: CMOS,TTL; 500000pA Mounting: SMT Operating voltage: 3...30V Operating temperature: -40...85°C Input bias current: 0.5µA Kind of output: CMOS; TTL Type of integrated circuit: comparator Input offset voltage: 20mV |
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В кошику од. на суму грн. |
| 1N5232BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; reel,tape; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5233BTR |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6V; reel,tape; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6V
Kind of package: reel; tape
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| 1N5234C |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; bulk; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: bulk
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
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| 1N5235B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; bulk; CASE017AG; single diode; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N52xxB
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| MMBTA14 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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| MBRS1100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Kind of package: reel; tape
на замовлення 8170 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.61 грн |
| 20+ | 21.33 грн |
| 22+ | 20.06 грн |
| 50+ | 16.34 грн |
| 100+ | 14.48 грн |
| 500+ | 10.07 грн |
| 1000+ | 8.13 грн |
| 2500+ | 6.26 грн |
| MMBTA63 |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 125MHz
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 125MHz
Kind of package: reel; tape
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| MMBTA64 |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 1.2A; 0.35W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 1.2A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 125MHz
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| MMBTA64LT1G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
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| SMMBTA64LT1G |
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Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.3W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MJE5852G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Collector current: 8A
Current gain: 15
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Type of transistor: PNP
Mounting: THT
Case: TO220AB
Collector current: 8A
Current gain: 15
Power dissipation: 80W
Collector-emitter voltage: 400V
Polarisation: bipolar
Kind of package: tube
на замовлення 58 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 278.05 грн |
| 50+ | 199.78 грн |
| NCV5652MUTWG |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Case: uDFN12
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 100nA
Input bias current: 1µA
Input offset voltage: 15mV
Slew rate: 1.5V/μs
Voltage supply range: 3.3...13.2V DC
Bandwidth: 350kHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 350kHz; Ch: 2; 3.3÷13.2VDC; uDFN12; 15mV
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Case: uDFN12
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 100nA
Input bias current: 1µA
Input offset voltage: 15mV
Slew rate: 1.5V/μs
Voltage supply range: 3.3...13.2V DC
Bandwidth: 350kHz
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| HUF75652G3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Kind of package: tube
Kind of channel: enhancement
Case: TO247
Mounting: THT
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 475nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 100V
Power dissipation: 515W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 515W; TO247
Kind of package: tube
Kind of channel: enhancement
Case: TO247
Mounting: THT
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Gate charge: 475nC
On-state resistance: 8mΩ
Gate-source voltage: ±20V
Drain current: 75A
Drain-source voltage: 100V
Power dissipation: 515W
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| MBR1560CT |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 15A
Kind of package: tube
Max. load current: 15A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 7.5Ax2; TO220AB; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.65V
Max. forward impulse current: 15A
Kind of package: tube
Max. load current: 15A
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| MBRA160T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. load current: 2.1A
Kind of package: reel; tape
на замовлення 3837 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.14 грн |
| 30+ | 14.56 грн |
| 32+ | 13.46 грн |
| 50+ | 10.92 грн |
| 100+ | 9.73 грн |
| 250+ | 8.04 грн |
| 500+ | 7.11 грн |
| 1000+ | 6.86 грн |
| 3000+ | 5.93 грн |
| NSR02100HT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 100V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 2A
Kind of package: reel; tape
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| 1SMA5914BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
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| SZ1SMA5914BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 3.6V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| BC848CLT3G |
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на замовлення 80000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50000+ | 0.82 грн |
| MM74HCT273WM |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; HCT; SMD; SO20-W; tube
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SO20-W
Manufacturer series: HCT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Trigger: positive-edge-triggered
на замовлення 313 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 72.02 грн |
| 10+ | 49.94 грн |
| 25+ | 47.40 грн |
| FNB40560 |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V
Type of integrated circuit: driver
Output current: 5A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Supply voltage: 300V
Insulation voltage: 2kV
Power dissipation: 29W
Collector-emitter voltage: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; 5A; Uoper: 600V; Usup: 300V; Uinsul: 2kV; 29W; Uce: 600V
Type of integrated circuit: driver
Output current: 5A
DC supply current: 3.65mA
Mounting: THT
Operating temperature: -40...150°C
Operating voltage: 600V
Supply voltage: 300V
Insulation voltage: 2kV
Power dissipation: 29W
Collector-emitter voltage: 600V
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| NCV1117ST33T3G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
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| 1N4148TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; reel,tape; Ifsm: 1A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Power dissipation: 0.5W
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; reel,tape; Ifsm: 1A; DO35; 500mW
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Kind of package: reel; tape
Max. forward impulse current: 1A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Power dissipation: 0.5W
на замовлення 2684 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 114+ | 3.72 грн |
| 219+ | 1.94 грн |
| 500+ | 1.26 грн |
| 1000+ | 1.08 грн |
| 2000+ | 0.93 грн |
| 2500+ | 0.89 грн |
| MC33269DTRK-3.3G | ![]() |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 0.8A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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| MCH6541-TL-E |
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Виробник: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A
Kind of transistor: complementary pair
Mounting: SMD
Case: MCPH6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Power dissipation: 0.55W
Collector current: 0.7A
Collector-emitter voltage: 30V
Current gain: 300...800
Frequency: 540MHz
Polarisation: bipolar
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 0.7A
Kind of transistor: complementary pair
Mounting: SMD
Case: MCPH6
Type of transistor: NPN / PNP
Kind of package: reel; tape
Power dissipation: 0.55W
Collector current: 0.7A
Collector-emitter voltage: 30V
Current gain: 300...800
Frequency: 540MHz
Polarisation: bipolar
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| N24C008C4DTG |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 1kx8bit; WLCSP4; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Mounting: SMD
Case: WLCSP4
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 400ns
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| NDS9945 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FDS5672 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTP125N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 600V
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Pulsed drain current: 77A
Power dissipation: 152W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220-3
Kind of package: tube
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 600V
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Gate-source voltage: ±30V
Pulsed drain current: 77A
Power dissipation: 152W
Kind of channel: enhancement
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| FQA90N15 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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| FQA90N15-F109 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 63.5A; Idm: 360A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 63.5A
Pulsed drain current: 360A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
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| FCPF067N65S3 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 46W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 44A; Idm: 110A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 44A
Pulsed drain current: 110A
Power dissipation: 46W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
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| NSVBAV99WT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SC70
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.215A; 6ns; SC70; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 6ns
Semiconductor structure: double series
Case: SC70
Max. forward voltage: 1V
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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| NCP398FCCT1G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; WLCSP4
Kind of integrated circuit: surge stopper
Case: WLCSP4
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; WLCSP4
Kind of integrated circuit: surge stopper
Case: WLCSP4
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
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| NCP398MUTBG |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; uDFN6
Kind of integrated circuit: surge stopper
Case: uDFN6
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
Category: Drivers - integrated circuits
Description: IC: driver; surge stopper; uDFN6
Kind of integrated circuit: surge stopper
Case: uDFN6
Mounting: SMD
Application: USB port ESD protection
Type of integrated circuit: driver
Operating temperature: -40...85°C
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| MJ4502G |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 90V; 30A; 200W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 90V
Collector current: 30A
Power dissipation: 200W
Case: TO3; TO204
Current gain: 25...100
Mounting: THT
Kind of package: in-tray
Frequency: 2MHz
на замовлення 69 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 591.65 грн |
| 5+ | 473.20 грн |
| FDB2532 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 56A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 56A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 82nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 429 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 340.95 грн |
| 10+ | 191.31 грн |
| 25+ | 181.15 грн |
| MMSZ5268BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 566 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.94 грн |
| 59+ | 7.28 грн |
| 71+ | 6.01 грн |
| 137+ | 3.09 грн |
| 500+ | 2.13 грн |
| MMBZ5268BLT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 82V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 82V
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 82V; SMD; SOT23; reel,tape; single diode
Kind of package: reel; tape
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Type of diode: Zener
Power dissipation: 0.3W
Tolerance: ±5%
Zener voltage: 82V
Manufacturer series: MMBZ52xxBLT1G
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| SZMMSZ5268BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 82V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 82V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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| FDPF17N60NT |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; Idm: 68A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
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| NTHL017N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 75A; Idm: 431A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 75A
Pulsed drain current: 431A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 75A; Idm: 431A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 75A
Pulsed drain current: 431A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 265nC
Kind of package: tube
Kind of channel: enhancement
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| BAV99 |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 8A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 8A
Power dissipation: 0.35W
Kind of package: reel; tape
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| MC74HC365ADTR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; TSSOP16; HC; HC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
на замовлення 2345 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 23.70 грн |
| 28+ | 15.41 грн |
| 32+ | 13.54 грн |
| 100+ | 13.04 грн |
| MC74HC365ADR2G |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,hex; Ch: 6; CMOS; SMD; SOIC16; HC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; hex
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: 3-state
Technology: CMOS
Manufacturer series: HC
Family: HC
Number of channels: 6
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| MC74HC365ADTR2G-Q |
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Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP16
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 2...6V
Number of inputs: 6
Kind of output: 3-state
Technology: CMOS
Family: HC
Number of channels: 6
Category: Shift registers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Case: TSSOP16
Operating temperature: -55...125°C
Mounting: SMD
Quiescent current: 40µA
Supply voltage: 2...6V
Number of inputs: 6
Kind of output: 3-state
Technology: CMOS
Family: HC
Number of channels: 6
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| NCP139AFCT05ADJT2G |
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Виробник: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Number of channels: 1
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
Type of integrated circuit: voltage regulator
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.5÷3V; 1A; WLCSP6
Voltage drop: 80mV
Output current: 1A
Output voltage: 0.5...3V
Input voltage: 0.5...5.5V
Number of channels: 1
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: adjustable; LDO; linear
Type of integrated circuit: voltage regulator
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
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| NCP139AFCT110T2G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Voltage drop: 80mV
Output current: 1A
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 1A; WLCSP6; SMD
Voltage drop: 80mV
Output current: 1A
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Number of channels: 1
Tolerance: ±1%
Manufacturer series: NCP139
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...85°C
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| MC74VHCT139ADR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Family: VHCT
Manufacturer series: VHCT
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SOIC16
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 2 to 4 line,decoder,demultiplexer; Ch: 2; IN: 3; SMD
Number of channels: 2
Number of inputs: 3
Supply voltage: 4.5...5.5V DC
Kind of integrated circuit: 2 to 4 line; decoder; demultiplexer
Family: VHCT
Manufacturer series: VHCT
Type of integrated circuit: digital
Kind of package: reel; tape
Case: SOIC16
Technology: CMOS; TTL
Mounting: SMD
Operating temperature: -55...125°C
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| NSR01L30MXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 2A
Kind of package: reel; tape
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| NSR01F30MXT5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; X3DFN2; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky switching
Case: X3DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 2A
Kind of package: reel; tape
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| NCP1608BDR2G |
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Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Topology: boost
Case: SO8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -55...125°C
Output current: 500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
Category: Drivers - integrated circuits
Description: IC: PMIC; 500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Topology: boost
Case: SO8
Type of integrated circuit: PMIC
Mounting: SMD
Operating temperature: -55...125°C
Output current: 500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
на замовлення 1906 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.82 грн |
| 17+ | 26.41 грн |
| NCS21671SQ100T2G |
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Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 35kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Operating temperature: -40...125°C
Mounting: SMT
Input offset current: 300nA
Input offset voltage: 10µV
Input bias current: 35µA
Slew rate: 0.3V/μs
Voltage supply range: 1.8...5.5V DC
Gain: 100V/V
Bandwidth: 35kHz
Type of integrated circuit: instrumentation amplifier
Case: SC70-6
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Number of channels: single; 1
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 35kHz; Ch: 1; 1.8÷5.5VDC; SC70-6
Operating temperature: -40...125°C
Mounting: SMT
Input offset current: 300nA
Input offset voltage: 10µV
Input bias current: 35µA
Slew rate: 0.3V/μs
Voltage supply range: 1.8...5.5V DC
Gain: 100V/V
Bandwidth: 35kHz
Type of integrated circuit: instrumentation amplifier
Case: SC70-6
Integrated circuit features: rail-to-rail output
Kind of package: reel; tape
Number of channels: single; 1
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| NUP2128WTT1G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Type of diode: TVS
Max. off-state voltage: 26.5V
Breakdown voltage: 27.5...35.5V
Semiconductor structure: bidirectional
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Type of diode: TVS
Max. off-state voltage: 26.5V
Breakdown voltage: 27.5...35.5V
Semiconductor structure: bidirectional
Case: SC70
Mounting: SMD
Kind of package: reel; tape
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| SZNUP2124MXWTBG |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26...33V
Semiconductor structure: bidirectional
Case: XDFNW3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Type of diode: TVS
Max. off-state voltage: 24V
Breakdown voltage: 26...33V
Semiconductor structure: bidirectional
Case: XDFNW3
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| SZNUP2128WTT1G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Type of diode: TVS
Max. off-state voltage: 26.5V
Breakdown voltage: 27.5...35.5V
Semiconductor structure: bidirectional
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Type of diode: TVS
Max. off-state voltage: 26.5V
Breakdown voltage: 27.5...35.5V
Semiconductor structure: bidirectional
Case: SC70
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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| MBRD5H100T4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Max. load current: 10A
на замовлення 2391 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.32 грн |
| 25+ | 40.38 грн |
| 50+ | 38.94 грн |
| 100+ | 37.59 грн |
| 1SMA5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
на замовлення 2442 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 27+ | 16.08 грн |
| 50+ | 11.00 грн |
| 100+ | 9.23 грн |
| 250+ | 7.45 грн |
| 500+ | 7.20 грн |
| SZ1SMA5917BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 4.7V; SMD; SMA; reel,tape; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
Application: automotive industry
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| MC3302DR2G |
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Виробник: ONSEMI
Category: Comparators
Description: IC: comparator; 3÷30V; SMT; OUT: CMOS,TTL; 500000pA
Mounting: SMT
Operating voltage: 3...30V
Operating temperature: -40...85°C
Input bias current: 0.5µA
Kind of output: CMOS; TTL
Type of integrated circuit: comparator
Input offset voltage: 20mV
Category: Comparators
Description: IC: comparator; 3÷30V; SMT; OUT: CMOS,TTL; 500000pA
Mounting: SMT
Operating voltage: 3...30V
Operating temperature: -40...85°C
Input bias current: 0.5µA
Kind of output: CMOS; TTL
Type of integrated circuit: comparator
Input offset voltage: 20mV
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