| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FAN5622SX | ONSEMI |
 Category: LED driversDescription: IC: driver; LED driver; SWD; TSOT23-6; 30mA; Ch: 2; 2.7÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Interface: SWD Case: TSOT23-6 Output current: 30mA Number of channels: 2 Supply voltage: 2.7...5.5V DC Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...85°C Maximum output current: 30mA |
на замовлення 2762 шт: термін постачання 14-30 дні (днів) |
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NB100ELT23LDTG | ONSEMI |
Category: Level translators Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2 Kind of integrated circuit: logic level voltage translator; non-inverting Type of integrated circuit: digital Mounting: SMD Case: TSSOP8 Kind of package: tube Operating temperature: -40...85°C Number of outputs: 2 Number of channels: 2 Number of inputs: 4 Manufacturer series: 100ELT |
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| NB100ELT23LDTR2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; TSSOP8; 100ELT; 3÷3.6V; Ch: 2; 26mA; 2.95ns Kind of integrated circuit: translator Type of integrated circuit: digital Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Delay time: 2.95ns Quiescent current: 26mA Number of channels: 2 Supply voltage: 3...3.6V Manufacturer series: 100ELT |
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| NB100LVEP17DTR2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; TSSOP20; 100LVEP; Ch: 4; Gate: AND Kind of gate: AND Kind of integrated circuit: differential; line receiver Type of integrated circuit: digital Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Number of channels: 4 Manufacturer series: 100LVEP |
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| NB100LVEP221MNRG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1 Kind of integrated circuit: demultiplexer Type of integrated circuit: digital Mounting: SMD Case: QFN52 Operating temperature: -40...85°C Number of channels: 1 Supply voltage: 2.375...3.8V Manufacturer series: 100LVEP |
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| NB100LVEP222MNG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1 Kind of integrated circuit: divider; fanout buffer Type of integrated circuit: digital Mounting: SMD Case: QFN52 Operating temperature: -40...85°C Number of channels: 1 Supply voltage: 2.375...3.8V Manufacturer series: 100LVEP |
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| NB100LVEP56MNG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: digital; 100LVEP; 2.375÷3.8V; Ch: 2; OUT: 1; IN: 2 Kind of integrated circuit: multiplexer Integrated circuit features: differential Type of integrated circuit: digital Mounting: SMD Operating temperature: -40...85°C Number of outputs: 1 Number of channels: 2 Number of inputs: 2 Supply voltage: 2.375...3.8V Manufacturer series: 100LVEP |
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NB100LVEP91DWG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital Mounting: SMD Case: SO20-W Kind of package: tube Operating temperature: -40...85°C Number of outputs: 6 Number of channels: 3 Number of inputs: 6 Frequency: 2GHz Manufacturer series: 100LVEP |
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NB100LVEP91MNG | ONSEMI |
Category: Level translators Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24 Kind of integrated circuit: logic level voltage translator Type of integrated circuit: digital Mounting: SMD Case: QFN24 Kind of package: tube Operating temperature: -40...85°C Number of outputs: 6 Number of channels: 3 Number of inputs: 6 Frequency: 2GHz Manufacturer series: 100LVEP |
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| MC100EP131FAG | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4 Kind of output: complementary Kind of integrated circuit: D flip-flop Kind of input: single-ended Type of integrated circuit: digital Technology: ECL Mounting: SMD Trigger: positive-edge-triggered Operating temperature: -40...85°C Supply voltage: -5.5...-3V Quiescent current: 120mA Number of outputs: 4 Number of channels: 4 Number of inputs: 4 Manufacturer series: 100EP Clock frequency: 3GHz Kind of gate: AND |
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| MC100EP131FAR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4 Kind of output: complementary Kind of integrated circuit: D flip-flop Type of integrated circuit: digital Technology: ECL Mounting: SMD Trigger: positive-edge-triggered Operating temperature: -40...85°C Supply voltage: -5.5...-3V Quiescent current: 120mA Number of outputs: 4 Number of channels: 4 Number of inputs: 4 Manufacturer series: 100EP Clock frequency: 3GHz Kind of gate: AND |
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| MC100EP139DTR2G | ONSEMI |
Category: Supervisor circuits Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1 Type of integrated circuit: digital Mounting: SMD Case: TSSOP20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of channels: 1 |
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В кошику од. на суму грн. | |||||||||||||||
| MC100EP139DWG | ONSEMI |
Category: Supervisor circuits Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL Kind of input: differential Type of integrated circuit: digital Technology: ECL Mounting: SMD Case: SOIC20 Operating temperature: -40...85°C Supply voltage: 3...5.5V Number of outputs: 4 Number of channels: 1 Manufacturer series: 100EP |
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1N4007 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Capacitance: 15pF Power dissipation: 3W |
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MUR420G | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: bulk Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
на замовлення 937 шт: термін постачання 14-30 дні (днів) |
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MUR420RLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
на замовлення 1514 шт: термін постачання 14-30 дні (днів) |
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TIP110G | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 2A Power dissipation: 2W Case: TO220AB Mounting: THT Kind of package: tube |
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523 Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.24kW Max. off-state voltage: 12V Breakdown voltage: 14.1V Max. forward impulse current: 9.6A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA |
на замовлення 1481 шт: термін постачання 14-30 дні (днів) |
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ESD5Z6.0T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape Type of diode: TVS Version: ESD Peak pulse power dissipation: 0.181kW Max. off-state voltage: 6V Breakdown voltage: 6.8V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Leakage current: 10nA |
на замовлення 3063 шт: термін постачання 14-30 дні (днів) |
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| BZX84C5V6 | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
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В кошику од. на суму грн. | |||||||||||||||
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BZX84C5V6LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C |
на замовлення 2868 шт: термін постачання 14-30 дні (днів) |
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| BZX84C5V6ET3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||
| SZBZX84C5V6LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| SZBZX84C5V6ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±7% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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NCP1606ADR2G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost Case: SO8 Mounting: SMD Type of integrated circuit: PMIC Operating temperature: -40...125°C Output current: -500...800mA Number of channels: 1 Operating voltage: 9.5...20V DC Topology: boost |
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В кошику од. на суму грн. | ||||||||||||||
| NCS20032DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: rail-to-rail output Case: SO8 |
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В кошику од. на суму грн. | |||||||||||||||
| NCS20032DMR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: low voltage; rail-to-rail output Case: Micro8 |
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В кошику од. на суму грн. | |||||||||||||||
| NCS20032DTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: dual; 2 Integrated circuit features: low voltage; rail-to-rail output Case: TSSOP8 |
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| NCS2003SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 1pA Input bias current: 1pA Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Slew rate: 8V/μs Bandwidth: 7MHz Type of integrated circuit: operational amplifier Number of channels: single; 1 Integrated circuit features: low voltage; rail-to-rail output Case: SOT23-5 |
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В кошику од. на суму грн. | |||||||||||||||
| BZX84C18LT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||
| SZBZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84C Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
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SZBZX84C18ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Case: SOT23 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
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В кошику од. на суму грн. | ||||||||||||||
| 2SD1803T-TL-H | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 5A Power dissipation: 1W Case: DPAK Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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В кошику од. на суму грн. | |||||||||||||||
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FODM1009R2 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SSOP4 Max. off-state voltage: 6V Manufacturer series: FODM100x |
на замовлення 295 шт: термін постачання 14-30 дні (днів) |
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MM3Z15VST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxST1G |
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В кошику од. на суму грн. | ||||||||||||||
| MM3Z15VB | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 15V Mounting: SMD Tolerance: ±2% Case: SOD323F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM3ZxxB |
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В кошику од. на суму грн. | |||||||||||||||
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MMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Manufacturer series: MMSZ4xxTxG Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Kind of package: reel; tape |
на замовлення 8629 шт: термін постачання 14-30 дні (днів) |
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SZMMSZ4692T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode Manufacturer series: MMSZ4xxTxG Mounting: SMD Semiconductor structure: single diode Case: SOD123 Type of diode: Zener Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 6.8V Kind of package: reel; tape Application: automotive industry |
на замовлення 2760 шт: термін постачання 14-30 дні (днів) |
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| NVMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
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В кошику од. на суму грн. | |||||||||||||||
| NTMJST2D6N08HTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10 Kind of package: reel; tape Mounting: SMD Case: TCPAK10 Polarisation: unipolar Gate charge: 68nC On-state resistance: 2.8mΩ Gate-source voltage: ±20V Power dissipation: 58W Drain-source voltage: 80V Drain current: 131.5A Pulsed drain current: 900A Kind of channel: enhancement Type of transistor: N-MOSFET |
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FDA59N25 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 35A Pulsed drain current: 236A Power dissipation: 392W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: THT Gate charge: 82nC Kind of package: tube Kind of channel: enhancement |
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FDS89161 | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 4.1nC Technology: PowerTrench® |
на замовлення 1993 шт: термін постачання 14-30 дні (днів) |
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FDS89161LZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.7A Power dissipation: 31W Case: SO8 Gate-source voltage: ±20V On-state resistance: 182mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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FDN5618P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3 Polarisation: unipolar Kind of channel: enhancement Mounting: SMD Features of semiconductor devices: logic level Type of transistor: P-MOSFET Technology: PowerTrench® Kind of package: reel; tape Case: SuperSOT-3 Drain-source voltage: -60V Drain current: -1.25A Gate charge: 13.8nC On-state resistance: 0.23Ω Power dissipation: 0.46W Gate-source voltage: ±20V |
на замовлення 482 шт: термін постачання 14-30 дні (днів) |
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| FDB16AN08A0 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 135W Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 28nC On-state resistance: 16mΩ Gate-source voltage: ±20V Drain current: 58A Drain-source voltage: 75V Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
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RS1K | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Power dissipation: 1.19W |
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В кошику од. на суму грн. | ||||||||||||||
| RS1KFP | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1.2A Reverse recovery time: 300ns Semiconductor structure: single diode Case: SOD123HE Max. forward voltage: 1.3V Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| RS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
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 |
NRVHPRS1KFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 0.8A Reverse recovery time: 0.5µs Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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 |
1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB |
на замовлення 521 шт: термін постачання 14-30 дні (днів) |
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| SZ1SMB5932BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Mounting: SMD Tolerance: ±5% Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: 1SMB59xxB Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
| DTC115EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
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| DTC115EM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 80...150 Base-emitter resistor: 100kΩ Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
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| DTC115TET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ Quantity in set/package: 3000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.3W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SC75; SOT416 Kind of package: reel; tape |
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| DTC115TM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ Quantity in set/package: 8000pcs. Type of transistor: NPN Mounting: SMD Collector current: 0.1A Power dissipation: 0.6W Kind of transistor: BRT Collector-emitter voltage: 50V Polarisation: bipolar Current gain: 160...350 Base resistor: 100kΩ Case: SOT723 Kind of package: reel; tape |
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| NCP137AFCTC110T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP137 Mounting: SMD Type of integrated circuit: voltage regulator Case: WLCSP6 Operating temperature: -40...85°C Voltage drop: 60mV Output current: 0.7A Number of channels: 1 Tolerance: ±1% Output voltage: 1.1V Input voltage: 1.1...5.5V |
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 |
MC74HC1G04DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Kind of package: reel; tape Case: SC70-5 Number of channels: single; 1 Mounting: SMD Operating temperature: -55...125°C Delay time: 7ns Number of inputs: 1 Technology: CMOS Supply voltage: 2...6V DC Family: HC |
на замовлення 880 шт: термін постачання 14-30 дні (днів) |
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| MC74HC1G04DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NOT Kind of package: reel; tape Case: SC70-5 Number of channels: single; 1 Mounting: SMD Operating temperature: -55...125°C Delay time: 20ns Number of inputs: 1 Technology: CMOS Supply voltage: 2...6V DC Family: HC |
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| MC74HC1G00DFT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: NAND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC70-5 Operating temperature: -55...125°C Family: HC Supply voltage: 2...6V DC Kind of package: reel; tape Technology: CMOS |
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| MC74HC1G04DFT2G-Q | ONSEMI |
Category: Gates, inverters Description: IC: digital Type of integrated circuit: digital |
товару немає в наявності |
В кошику од. на суму грн. |
| FAN5622SX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; 30mA; Ch: 2; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Interface: SWD
Case: TSOT23-6
Output current: 30mA
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; 30mA; Ch: 2; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Interface: SWD
Case: TSOT23-6
Output current: 30mA
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...85°C
Maximum output current: 30mA
на замовлення 2762 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.96 грн |
| 12+ | 36.40 грн |
| 14+ | 31.07 грн |
| 25+ | 28.78 грн |
| NB100ELT23LDTG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Kind of integrated circuit: logic level voltage translator; non-inverting
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 2
Number of channels: 2
Number of inputs: 4
Manufacturer series: 100ELT
Category: Level translators
Description: IC: digital; non-inverting,logic level voltage translator; Ch: 2
Kind of integrated circuit: logic level voltage translator; non-inverting
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP8
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 2
Number of channels: 2
Number of inputs: 4
Manufacturer series: 100ELT
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| NB100ELT23LDTR2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; TSSOP8; 100ELT; 3÷3.6V; Ch: 2; 26mA; 2.95ns
Kind of integrated circuit: translator
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Delay time: 2.95ns
Quiescent current: 26mA
Number of channels: 2
Supply voltage: 3...3.6V
Manufacturer series: 100ELT
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; TSSOP8; 100ELT; 3÷3.6V; Ch: 2; 26mA; 2.95ns
Kind of integrated circuit: translator
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Delay time: 2.95ns
Quiescent current: 26mA
Number of channels: 2
Supply voltage: 3...3.6V
Manufacturer series: 100ELT
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| NB100LVEP17DTR2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; TSSOP20; 100LVEP; Ch: 4; Gate: AND
Kind of gate: AND
Kind of integrated circuit: differential; line receiver
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Number of channels: 4
Manufacturer series: 100LVEP
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; TSSOP20; 100LVEP; Ch: 4; Gate: AND
Kind of gate: AND
Kind of integrated circuit: differential; line receiver
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Number of channels: 4
Manufacturer series: 100LVEP
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| NB100LVEP221MNRG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1
Kind of integrated circuit: demultiplexer
Type of integrated circuit: digital
Mounting: SMD
Case: QFN52
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1
Kind of integrated circuit: demultiplexer
Type of integrated circuit: digital
Mounting: SMD
Case: QFN52
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
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| NB100LVEP222MNG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1
Kind of integrated circuit: divider; fanout buffer
Type of integrated circuit: digital
Mounting: SMD
Case: QFN52
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; QFN52; 100LVEP; 2.375÷3.8V; Ch: 1
Kind of integrated circuit: divider; fanout buffer
Type of integrated circuit: digital
Mounting: SMD
Case: QFN52
Operating temperature: -40...85°C
Number of channels: 1
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
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| NB100LVEP56MNG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; 100LVEP; 2.375÷3.8V; Ch: 2; OUT: 1; IN: 2
Kind of integrated circuit: multiplexer
Integrated circuit features: differential
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 2
Number of inputs: 2
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
Category: Serial EEPROM memories - integ. circ.
Description: IC: digital; 100LVEP; 2.375÷3.8V; Ch: 2; OUT: 1; IN: 2
Kind of integrated circuit: multiplexer
Integrated circuit features: differential
Type of integrated circuit: digital
Mounting: SMD
Operating temperature: -40...85°C
Number of outputs: 1
Number of channels: 2
Number of inputs: 2
Supply voltage: 2.375...3.8V
Manufacturer series: 100LVEP
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| NB100LVEP91DWG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Mounting: SMD
Case: SO20-W
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 6
Number of channels: 3
Number of inputs: 6
Frequency: 2GHz
Manufacturer series: 100LVEP
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; SO20-W
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Mounting: SMD
Case: SO20-W
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 6
Number of channels: 3
Number of inputs: 6
Frequency: 2GHz
Manufacturer series: 100LVEP
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| NB100LVEP91MNG |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Mounting: SMD
Case: QFN24
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 6
Number of channels: 3
Number of inputs: 6
Frequency: 2GHz
Manufacturer series: 100LVEP
Category: Level translators
Description: IC: digital; logic level voltage translator; Ch: 3; SMD; QFN24
Kind of integrated circuit: logic level voltage translator
Type of integrated circuit: digital
Mounting: SMD
Case: QFN24
Kind of package: tube
Operating temperature: -40...85°C
Number of outputs: 6
Number of channels: 3
Number of inputs: 6
Frequency: 2GHz
Manufacturer series: 100LVEP
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| MC100EP131FAG |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: single-ended
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Kind of input: single-ended
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
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| MC100EP131FAR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 4; IN: 4; ECL; 100EP; SMD; 120mA; OUT: 4
Kind of output: complementary
Kind of integrated circuit: D flip-flop
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Trigger: positive-edge-triggered
Operating temperature: -40...85°C
Supply voltage: -5.5...-3V
Quiescent current: 120mA
Number of outputs: 4
Number of channels: 4
Number of inputs: 4
Manufacturer series: 100EP
Clock frequency: 3GHz
Kind of gate: AND
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| MC100EP139DTR2G |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
Category: Supervisor circuits
Description: IC: digital; TSSOP20; 3÷5.5V; Ch: 1
Type of integrated circuit: digital
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of channels: 1
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| MC100EP139DWG |
|
Виробник: ONSEMI
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
Category: Supervisor circuits
Description: IC: digital; SOIC20; 3÷5.5V; Ch: 1; OUT: 4; 100EP; ECL
Kind of input: differential
Type of integrated circuit: digital
Technology: ECL
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 3...5.5V
Number of outputs: 4
Number of channels: 1
Manufacturer series: 100EP
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| 1N4007 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 30A; CASE59; 3W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Capacitance: 15pF
Power dissipation: 3W
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| MUR420G |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; bulk; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: bulk
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
на замовлення 937 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.35 грн |
| 23+ | 18.54 грн |
| 100+ | 18.03 грн |
| MUR420RLG | |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
на замовлення 1514 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 37.38 грн |
| 16+ | 27.77 грн |
| 17+ | 25.65 грн |
| 50+ | 20.91 грн |
| 100+ | 18.96 грн |
| 500+ | 16.42 грн |
| TIP110G |
|
Виробник: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 2A; 2W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 2A
Power dissipation: 2W
Case: TO220AB
Mounting: THT
Kind of package: tube
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| ESD5Z12T1G | |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.24kW
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 240W; 14.1V; 9.6A; unidirectional; SOD523
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.24kW
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Max. forward impulse current: 9.6A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
на замовлення 1481 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 85+ | 4.99 грн |
| 118+ | 3.59 грн |
| 135+ | 3.16 грн |
| 500+ | 2.42 грн |
| 1000+ | 2.10 грн |
| ESD5Z6.0T1G | |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.181kW
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 181W; 6.8V; 8.8A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Version: ESD
Peak pulse power dissipation: 0.181kW
Max. off-state voltage: 6V
Breakdown voltage: 6.8V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Leakage current: 10nA
на замовлення 3063 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.94 грн |
| 56+ | 7.62 грн |
| 71+ | 6.01 грн |
| 129+ | 3.30 грн |
| 162+ | 2.62 грн |
| 500+ | 1.85 грн |
| 1000+ | 1.83 грн |
| BZX84C5V6 |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
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| BZX84C5V6LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
на замовлення 2868 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 99+ | 4.32 грн |
| 189+ | 2.24 грн |
| 500+ | 1.57 грн |
| 1000+ | 1.39 грн |
| BZX84C5V6ET3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
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| SZBZX84C5V6LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C5V6ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±7%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| NCP1606ADR2G |
|
Виробник: ONSEMI
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Case: SO8
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
Topology: boost
Category: Drivers - integrated circuits
Description: IC: PMIC; -500÷800mA; 9.5÷20VDC; SO8; Topology: boost
Case: SO8
Mounting: SMD
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Output current: -500...800mA
Number of channels: 1
Operating voltage: 9.5...20V DC
Topology: boost
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| NCS20032DR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: rail-to-rail output
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; SO8; 4mV; IB: 1pA
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: rail-to-rail output
Case: SO8
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| NCS20032DMR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; Micro8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: Micro8
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| NCS20032DTBR2G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 2; 1.7÷5.5VDC; TSSOP8; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: dual; 2
Integrated circuit features: low voltage; rail-to-rail output
Case: TSSOP8
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| NCS2003SN2T1G |
|
Виробник: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; Ch: 1; 1.7÷5.5VDC; SOT23-5; 4mV
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 1pA
Input bias current: 1pA
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Slew rate: 8V/μs
Bandwidth: 7MHz
Type of integrated circuit: operational amplifier
Number of channels: single; 1
Integrated circuit features: low voltage; rail-to-rail output
Case: SOT23-5
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| BZX84C18LT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
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| SZBZX84C18LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode; BZX84C
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84C
Application: automotive industry
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| SZBZX84C18ET1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; SOT23; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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| 2SD1803T-TL-H |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 5A; 1W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 5A
Power dissipation: 1W
Case: DPAK
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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| FODM1009R2 |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SSOP4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SSOP4
Max. off-state voltage: 6V
Manufacturer series: FODM100x
на замовлення 295 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 17+ | 25.73 грн |
| 100+ | 19.64 грн |
| MM3Z15VST1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
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| MM3Z15VB |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; SOD323F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Case: SOD323F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM3ZxxB
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| MMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
на замовлення 8629 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 114+ | 3.72 грн |
| 152+ | 2.79 грн |
| 261+ | 1.63 грн |
| 286+ | 1.48 грн |
| SZMMSZ4692T1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; SOD123; reel,tape; single diode
Manufacturer series: MMSZ4xxTxG
Mounting: SMD
Semiconductor structure: single diode
Case: SOD123
Type of diode: Zener
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 6.8V
Kind of package: reel; tape
Application: automotive industry
на замовлення 2760 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 17.32 грн |
| 33+ | 12.87 грн |
| 38+ | 11.26 грн |
| 100+ | 6.77 грн |
| 500+ | 5.08 грн |
| NVMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| NTMJST2D6N08HTXG |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Kind of package: reel; tape
Mounting: SMD
Case: TCPAK10
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 2.8mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Kind of channel: enhancement
Type of transistor: N-MOSFET
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| FDA59N25 |
|
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 35A; Idm: 236A; 392W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 35A
Pulsed drain current: 236A
Power dissipation: 392W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhancement
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| FDS89161 |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.1nC
Technology: PowerTrench®
на замовлення 1993 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.73 грн |
| 25+ | 71.11 грн |
| FDS89161LZ |
|
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.7A
Power dissipation: 31W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 182mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| FDN5618P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.25A; 0.46W; SuperSOT-3
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Features of semiconductor devices: logic level
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: -60V
Drain current: -1.25A
Gate charge: 13.8nC
On-state resistance: 0.23Ω
Power dissipation: 0.46W
Gate-source voltage: ±20V
на замовлення 482 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 28.26 грн |
| 27+ | 16.00 грн |
| 50+ | 13.63 грн |
| 100+ | 13.12 грн |
| FDB16AN08A0 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 58A; 135W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 135W
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 28nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 75V
Kind of channel: enhancement
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| RS1K |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; DO214AC,SMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Power dissipation: 1.19W
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| RS1KFP |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1.2A; 300ns; SOD123HE; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1.2A
Reverse recovery time: 300ns
Semiconductor structure: single diode
Case: SOD123HE
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| RS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| NRVHPRS1KFA |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 0.8A; 500ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 0.8A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| 1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
на замовлення 521 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 19.14 грн |
| 28+ | 15.24 грн |
| 32+ | 13.29 грн |
| 50+ | 8.89 грн |
| 100+ | 7.53 грн |
| 200+ | 6.94 грн |
| SZ1SMB5932BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; SMD; SMB; reel,tape; single diode; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| DTC115EET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115EM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 80...150
Base-emitter resistor: 100kΩ
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| DTC115TET1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416; 100kΩ
Quantity in set/package: 3000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.3W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SC75; SOT416
Kind of package: reel; tape
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| DTC115TM3T5G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; 100kΩ
Quantity in set/package: 8000pcs.
Type of transistor: NPN
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.6W
Kind of transistor: BRT
Collector-emitter voltage: 50V
Polarisation: bipolar
Current gain: 160...350
Base resistor: 100kΩ
Case: SOT723
Kind of package: reel; tape
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| NCP137AFCTC110T2G |
|
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.1V; 700mA; WLCSP6; SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP137
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: WLCSP6
Operating temperature: -40...85°C
Voltage drop: 60mV
Output current: 0.7A
Number of channels: 1
Tolerance: ±1%
Output voltage: 1.1V
Input voltage: 1.1...5.5V
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| MC74HC1G04DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 7ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 7ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
на замовлення 880 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.38 грн |
| 148+ | 2.88 грн |
| 169+ | 2.51 грн |
| 187+ | 2.27 грн |
| 205+ | 2.07 грн |
| 250+ | 1.88 грн |
| 500+ | 1.87 грн |
| MC74HC1G04DFT2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 20ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Kind of package: reel; tape
Case: SC70-5
Number of channels: single; 1
Mounting: SMD
Operating temperature: -55...125°C
Delay time: 20ns
Number of inputs: 1
Technology: CMOS
Supply voltage: 2...6V DC
Family: HC
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| MC74HC1G00DFT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 2; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC70-5
Operating temperature: -55...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Technology: CMOS
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| MC74HC1G04DFT2G-Q |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
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