Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX84C6V8LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 2µA |
на замовлення 1464 шт: термін постачання 21-30 дні (днів) |
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MUR120RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Max. forward voltage: 0.875V Reverse recovery time: 35ns Max. load current: 1A |
на замовлення 2383 шт: термін постачання 21-30 дні (днів) |
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CAT24C16YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4006FFG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59 Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: rectifying Quantity in set/package: 3000pcs. Mounting: THT Case: CASE59 |
на замовлення 4415 шт: термін постачання 21-30 дні (днів) |
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1N4006RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH040N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 136nC Kind of package: tube Polarisation: unipolar Drain current: 41A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 40mΩ Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FCHD040N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 136nC Kind of package: tube Polarisation: unipolar Drain current: 41A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 35.4Ω/4mΩ Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTH4L040N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Polarisation: unipolar Drain current: 45A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 32mΩ Pulsed drain current: 162.5A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MC79M12BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00 Operating temperature: -40...125°C Mounting: SMD Case: DPAK Tolerance: ±4% Output voltage: -12V Output current: 0.5A Voltage drop: 1.1V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: reel; tape Manufacturer series: MC79M00 Kind of voltage regulator: fixed; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC79M12BTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube Operating temperature: -40...125°C Mounting: THT Case: TO220AB Tolerance: ±4% Output voltage: -12V Output current: 0.5A Voltage drop: 1.3V Type of integrated circuit: voltage regulator Number of channels: 1 Kind of package: tube Manufacturer series: MC79M00 Kind of voltage regulator: fixed; linear Heatsink thickness: 0.508...0.61mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FDC5614P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 3488 шт: термін постачання 21-30 дні (днів) |
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MC14043BDG | ONSEMI |
![]() Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 4 Kind of output: 3-state Kind of package: tube Trigger: level-triggered Kind of integrated circuit: RS latch Mounting: SMD Case: SO16 Supply voltage: 3...18V DC |
на замовлення 42 шт: термін постачання 21-30 дні (днів) |
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RSL10-SENSE-DB-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX28TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 2.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX30TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX33TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3.3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX18TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 1.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX28TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 2.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX30TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX33TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3.3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQD18N20V2TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 977 шт: термін постачання 21-30 дні (днів) |
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MMBD1501A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Case: SOT23 |
на замовлення 2165 шт: термін постачання 21-30 дні (днів) |
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MMBD1505A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: common anode; double Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Case: SOT23 |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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2N7002ET1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002ET7G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A |
на замовлення 848 шт: термін постачання 21-30 дні (днів) |
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FDC6305N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 0.96W Case: SuperSOT-6 Mounting: SMD Kind of package: reel; tape On-state resistance: 128mΩ Gate charge: 5nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 2.7A |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
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1SMB5930BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2104 шт: термін постачання 21-30 дні (днів) |
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RSL10-SENSE-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C18LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 18980 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C18ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMS1D2N03DSD | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQT4N20LTF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3307 шт: термін постачання 21-30 дні (днів) |
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MMBF170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Case: SOT23 Drain-source voltage: 60V Drain current: 0.5A On-state resistance: 1.2Ω Mounting: SMD Power dissipation: 0.3W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1564 шт: термін постачання 21-30 дні (днів) |
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MMBF170LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: N-MOSFET Case: SOT23 Drain-source voltage: 60V Drain current: 0.5A On-state resistance: 5Ω Mounting: SMD Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 7100 шт: термін постачання 21-30 дні (днів) |
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MMBF4117 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA Gate current: 50mA Drain current: 30µA Type of transistor: N-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD Case: SOT23 |
на замовлення 3570 шт: термін постачання 21-30 дні (днів) |
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1N5351BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
на замовлення 1004 шт: термін постачання 21-30 дні (днів) |
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1N5351BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS21LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.3W Leakage current: 0.1mA Capacitance: 5pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5242B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N52xxB |
на замовлення 4125 шт: термін постачання 21-30 дні (днів) |
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MBRB2545CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. load current: 30A Kind of package: reel; tape |
на замовлення 781 шт: термін постачання 21-30 дні (днів) |
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FDMC012N03 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BDW94C | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: bulk |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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BDW94CFTU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 30W Case: TO220FP Current gain: 100...20000 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJL1302AG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 30MHz |
на замовлення 12 шт: термін постачання 21-30 дні (днів) |
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NTR4101PT1G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23 Mounting: SMD Power dissipation: 0.21W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.5nC Kind of channel: enhancement Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -1.7A On-state resistance: 0.21Ω Type of transistor: P-MOSFET |
на замовлення 1505 шт: термін постачання 21-30 дні (днів) |
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MC79M05BDTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
на замовлення 242 шт: термін постачання 21-30 дні (днів) |
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MC79M05BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
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MC79M05CDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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H11AA1M | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: DIP6 CTR@If: 20%@10mA |
на замовлення 509 шт: термін постачання 21-30 дні (днів) |
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H11AA1SR2M | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV Case: Gull wing 6 CTR@If: 20%@10mA |
на замовлення 108 шт: термін постачання 21-30 дні (днів) |
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FAN73832MX | ONSEMI |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8 Mounting: SMD Operating temperature: -40...125°C Protection: undervoltage UVP Technology: MillerDrive™ Kind of integrated circuit: gate driver; high-/low-side Topology: MOSFET half-bridge Case: SOP8 Supply voltage: 15...20V DC Voltage class: 600V Output current: -650...350mA Type of integrated circuit: driver Impulse rise time: 100ns Pulse fall time: 80ns Number of channels: 2 Kind of package: reel; tape |
на замовлення 941 шт: термін постачання 21-30 дні (днів) |
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FQPF19N20C | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Power dissipation: 43W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: QFET® |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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FQPF27P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: THT Gate charge: 43nC Kind of package: tube Kind of channel: enhancement Technology: QFET® |
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В кошику од. на суму грн. | ||||||||||||||||
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MC74LVX4245DWG | ONSEMI |
![]() Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD Type of integrated circuit: digital Number of channels: 8 Quiescent current: 80µA Kind of output: 3-state Kind of package: tube Manufacturer series: LVX Technology: TTL Kind of integrated circuit: bidirectional; transceiver; translator Mounting: SMD Operating temperature: -40...85°C Case: SO24 Supply voltage: 2.7...5.5V DC |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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LM2575T-5G | ONSEMI |
![]() ![]() Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.75...40V DC Output voltage: 5V DC Output current: 1A Case: TO220-5 Mounting: THT Frequency: 42...63kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube |
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В кошику од. на суму грн. | ||||||||||||||||
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SBAT54SLT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 10pF Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 1A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
на замовлення 2871 шт: термін постачання 21-30 дні (днів) |
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MCT62S | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Case: Gull wing 8 Insulation voltage: 5.3kV CTR@If: 100%@5mA |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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MBR60H100CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward voltage: 0.81V Max. forward impulse current: 350A |
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В кошику од. на суму грн. | ||||||||||||||||
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MBR60L45CTG | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO220-3 Kind of package: tube Heatsink thickness: 1.15...1.39mm Max. load current: 60A Max. forward voltage: 0.76V Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BDV64BG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 10A Power dissipation: 125W Case: TO247-3 Mounting: THT Kind of package: tube |
на замовлення 102 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V8LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 2µA
на замовлення 1464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
87+ | 4.38 грн |
107+ | 3.55 грн |
186+ | 2.04 грн |
228+ | 1.66 грн |
710+ | 1.25 грн |
MUR120RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
на замовлення 2383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.72 грн |
31+ | 12.40 грн |
100+ | 9.22 грн |
126+ | 7.03 грн |
346+ | 6.65 грн |
CAT24C16YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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1N4006FFG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Quantity in set/package: 3000pcs.
Mounting: THT
Case: CASE59
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: rectifying
Quantity in set/package: 3000pcs.
Mounting: THT
Case: CASE59
на замовлення 4415 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
321+ | 1.27 грн |
417+ | 0.91 грн |
432+ | 0.88 грн |
455+ | 0.83 грн |
500+ | 0.80 грн |
1N4006RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
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FCH040N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
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FCHD040N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Pulsed drain current: 162.5A
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NTH4L040N65S3F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1125.01 грн |
3+ | 987.20 грн |
MC79M12BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Operating temperature: -40...125°C
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: -12V
Output current: 0.5A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MC79M00
Kind of voltage regulator: fixed; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Operating temperature: -40...125°C
Mounting: SMD
Case: DPAK
Tolerance: ±4%
Output voltage: -12V
Output current: 0.5A
Voltage drop: 1.1V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: reel; tape
Manufacturer series: MC79M00
Kind of voltage regulator: fixed; linear
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MC79M12BTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Operating temperature: -40...125°C
Mounting: THT
Case: TO220AB
Tolerance: ±4%
Output voltage: -12V
Output current: 0.5A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: tube
Manufacturer series: MC79M00
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Operating temperature: -40...125°C
Mounting: THT
Case: TO220AB
Tolerance: ±4%
Output voltage: -12V
Output current: 0.5A
Voltage drop: 1.3V
Type of integrated circuit: voltage regulator
Number of channels: 1
Kind of package: tube
Manufacturer series: MC79M00
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
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FDC5614P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 3488 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.66 грн |
11+ | 35.91 грн |
50+ | 27.06 грн |
51+ | 17.69 грн |
141+ | 16.71 грн |
750+ | 16.40 грн |
1000+ | 16.10 грн |
MC14043BDG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
на замовлення 42 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.71 грн |
10+ | 43.39 грн |
25+ | 35.30 грн |
33+ | 27.59 грн |
RSL10-SENSE-DB-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
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NCP752AMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX30TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX33TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX18TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX30TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX33TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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FQD18N20V2TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 977 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 91.17 грн |
10+ | 70.30 грн |
19+ | 48.38 грн |
51+ | 45.35 грн |
500+ | 43.84 грн |
MMBD1501A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
на замовлення 2165 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.40 грн |
47+ | 8.16 грн |
59+ | 6.50 грн |
72+ | 5.31 грн |
100+ | 4.33 грн |
303+ | 2.91 грн |
833+ | 2.75 грн |
MMBD1505A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.54 грн |
32+ | 11.94 грн |
50+ | 8.84 грн |
100+ | 7.82 грн |
2N7002ET1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
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2N7002ET7G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
на замовлення 848 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 8.95 грн |
61+ | 6.20 грн |
92+ | 4.14 грн |
109+ | 3.47 грн |
604+ | 1.48 грн |
FDC6305N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.7A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 0.96W
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 128mΩ
Gate charge: 5nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Drain-source voltage: 20V
Drain current: 2.7A
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.66 грн |
12+ | 32.35 грн |
48+ | 18.52 грн |
132+ | 17.46 грн |
1SMB5930BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2104 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.86 грн |
23+ | 17.16 грн |
50+ | 11.49 грн |
100+ | 9.68 грн |
132+ | 6.65 грн |
362+ | 6.35 грн |
1000+ | 6.20 грн |
1300+ | 6.12 грн |
RSL10-SENSE-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
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BZX84C18LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 18980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
97+ | 3.93 грн |
141+ | 2.69 грн |
168+ | 2.25 грн |
918+ | 0.98 грн |
1500+ | 0.97 грн |
2525+ | 0.91 грн |
9000+ | 0.88 грн |
SZBZX84C18ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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FDMS1D2N03DSD |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQT4N20LTF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3307 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 64.31 грн |
10+ | 43.92 грн |
35+ | 25.62 грн |
96+ | 24.19 грн |
500+ | 23.58 грн |
1000+ | 23.28 грн |
MMBF170 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 1.2Ω
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 1.2Ω
Mounting: SMD
Power dissipation: 0.3W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1564 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.17 грн |
33+ | 11.72 грн |
50+ | 8.24 грн |
100+ | 7.12 грн |
215+ | 4.11 грн |
591+ | 3.89 грн |
MMBF170LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 5Ω
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.5A
On-state resistance: 5Ω
Mounting: SMD
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 7100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.09 грн |
38+ | 10.05 грн |
57+ | 6.67 грн |
100+ | 5.57 грн |
248+ | 3.57 грн |
681+ | 3.37 грн |
1000+ | 3.24 грн |
MMBF4117 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Case: SOT23
на замовлення 3570 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 39.89 грн |
16+ | 24.94 грн |
25+ | 19.80 грн |
80+ | 11.11 грн |
219+ | 10.51 грн |
1N5351BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
на замовлення 1004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 50.47 грн |
11+ | 34.47 грн |
13+ | 29.48 грн |
63+ | 14.04 грн |
173+ | 13.27 грн |
1000+ | 12.85 грн |
1N5351BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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BAS21LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
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1N5242B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
на замовлення 4125 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.33 грн |
79+ | 4.84 грн |
124+ | 3.07 грн |
149+ | 2.55 грн |
500+ | 1.80 грн |
655+ | 1.35 грн |
1799+ | 1.28 грн |
MBRB2545CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 781 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 118.04 грн |
10+ | 83.15 грн |
13+ | 73.32 грн |
34+ | 68.79 грн |
100+ | 66.52 грн |
FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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BDW94C |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
на замовлення 195 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 92.80 грн |
8+ | 51.55 грн |
23+ | 39.53 грн |
25+ | 39.46 грн |
62+ | 37.34 грн |
BDW94CFTU |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
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MJL1302AG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
на замовлення 12 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 306.08 грн |
5+ | 207.12 грн |
12+ | 195.78 грн |
NTR4101PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Power dissipation: 0.21W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.7A; 0.21W; SOT23
Mounting: SMD
Power dissipation: 0.21W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Case: SOT23
Drain-source voltage: -20V
Drain current: -1.7A
On-state resistance: 0.21Ω
Type of transistor: P-MOSFET
на замовлення 1505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.68 грн |
21+ | 18.60 грн |
24+ | 15.80 грн |
50+ | 10.66 грн |
80+ | 9.52 грн |
100+ | 9.15 грн |
137+ | 6.66 грн |
375+ | 6.30 грн |
MC79M05BDTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
на замовлення 242 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.57 грн |
10+ | 43.54 грн |
25+ | 34.02 грн |
39+ | 22.90 грн |
107+ | 21.62 грн |
MC79M05BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
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MC79M05CDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
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H11AA1M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: DIP6
CTR@If: 20%@10mA
на замовлення 509 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.87 грн |
12+ | 32.28 грн |
42+ | 21.54 грн |
100+ | 21.47 грн |
114+ | 20.33 грн |
H11AA1SR2M |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 7.5kV; CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
Case: Gull wing 6
CTR@If: 20%@10mA
на замовлення 108 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 51.28 грн |
12+ | 31.82 грн |
30+ | 29.78 грн |
50+ | 27.14 грн |
FAN73832MX |
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Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Mounting: SMD
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Case: SOP8
Supply voltage: 15...20V DC
Voltage class: 600V
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SOP8
Mounting: SMD
Operating temperature: -40...125°C
Protection: undervoltage UVP
Technology: MillerDrive™
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Case: SOP8
Supply voltage: 15...20V DC
Voltage class: 600V
Output current: -650...350mA
Type of integrated circuit: driver
Impulse rise time: 100ns
Pulse fall time: 80ns
Number of channels: 2
Kind of package: reel; tape
на замовлення 941 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 83.85 грн |
6+ | 68.79 грн |
16+ | 55.94 грн |
44+ | 52.91 грн |
500+ | 51.40 грн |
FQPF19N20C |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; 43W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Power dissipation: 43W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.90 грн |
10+ | 73.32 грн |
15+ | 61.98 грн |
FQPF27P06 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 47W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: QFET®
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MC74LVX4245DWG |
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Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LVX
Technology: TTL
Kind of integrated circuit: bidirectional; transceiver; translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO24
Supply voltage: 2.7...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver,translator; Ch: 8; TTL; SMD
Type of integrated circuit: digital
Number of channels: 8
Quiescent current: 80µA
Kind of output: 3-state
Kind of package: tube
Manufacturer series: LVX
Technology: TTL
Kind of integrated circuit: bidirectional; transceiver; translator
Mounting: SMD
Operating temperature: -40...85°C
Case: SO24
Supply voltage: 2.7...5.5V DC
на замовлення 3 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 153.04 грн |
LM2575T-5G | ![]() |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 5VDC; 1A; TO220-5; THT
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 5V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
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SBAT54SLT1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 10pF
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 1A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
на замовлення 2871 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 17.91 грн |
35+ | 11.11 грн |
42+ | 9.01 грн |
50+ | 7.62 грн |
100+ | 6.43 грн |
252+ | 3.55 грн |
691+ | 3.36 грн |
MCT62S |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 5.3kV; CTR@If: 100%@5mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Case: Gull wing 8
Insulation voltage: 5.3kV
CTR@If: 100%@5mA
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.75 грн |
10+ | 41.05 грн |
29+ | 30.69 грн |
80+ | 29.03 грн |
100+ | 28.95 грн |
MBR60H100CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220-3; Ufmax: 0.81V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.81V
Max. forward impulse current: 350A
товару немає в наявності
В кошику
од. на суму грн.
MBR60L45CTG |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220-3; Ufmax: 0.76V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO220-3
Kind of package: tube
Heatsink thickness: 1.15...1.39mm
Max. load current: 60A
Max. forward voltage: 0.76V
Max. forward impulse current: 200A
товару немає в наявності
В кошику
од. на суму грн.
BDV64BG |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 10A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
на замовлення 102 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 276.78 грн |
7+ | 135.31 грн |
19+ | 127.75 грн |