| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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MURS110T3G | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.875V Kind of package: reel; tape Reverse recovery time: 35ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BZX79C5V1-T50A | ONSEMI |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Kind of package: Ammo Pack Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: BZX79C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NSVDTC123JET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 80...140 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 2N7002V | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.28A Pulsed drain current: 1.5A Power dissipation: 0.25W Case: SOT563F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NCV8406ASTT1G | ONSEMI |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 7A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOT223 On-state resistance: 0.46Ω Kind of package: reel; tape Supply voltage: 60V DC Application: automotive industry |
на замовлення 542 шт: термін постачання 14-30 дні (днів) |
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MC74LVX4051DTG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS Manufacturer series: LVX Number of inputs: 8 Family: LVX |
на замовлення 119 шт: термін постачання 14-30 дні (днів) |
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MC74LVX4051DG | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Technology: CMOS Manufacturer series: LVX Number of inputs: 8 Family: LVX |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVX4051DR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: SOIC16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Manufacturer series: LVX Number of inputs: 8 Family: LVX |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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MC74LVX4051DTR2G | ONSEMI |
Category: Decoders, multiplexers, switchesDescription: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8 Type of integrated circuit: digital Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer Number of channels: 1 Case: TSSOP16 Supply voltage: -6...0V DC; 2.5...6V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Technology: CMOS Manufacturer series: LVX Number of inputs: 8 Family: LVX |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
| FSV15100V | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape Type of diode: Schottky rectifying Case: TO277 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.66V Max. forward impulse current: 250A Kind of package: reel; tape |
на замовлення 2997 шт: термін постачання 14-30 дні (днів) |
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| NTLJS3D0N02P8ZTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 20.2A Pulsed drain current: 81A Power dissipation: 2.4W Case: WDFN6 Gate-source voltage: ±12V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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MC14052BDTR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2 Type of integrated circuit: analog switch Output configuration: 4:1 Number of channels: 2 Case: TSSOP16 Supply voltage: 3...18V Mounting: SMD Resistance: 80Ω Operating temperature: -55...125°C Quiescent current: 600µA Kind of integrated circuit: demultiplexer; multiplexer; SPDT Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MC14052BDR2G | ONSEMI |
Category: Analog multiplexers and switchesDescription: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC Type of integrated circuit: analog switch Number of channels: 2 Case: SO16 Supply voltage: 3...18V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Quiescent current: 600µA Kind of output: DP4T Kind of integrated circuit: demultiplexer; multiplexer Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| NTP185N60S5H | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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| NSVDTA144WET1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 22kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 80...140 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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NUP2114UPXV5T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT553 Number of channels: 2 Kind of package: reel; tape Version: ESD |
на замовлення 942 шт: термін постачання 14-30 дні (днів) |
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NUP4114UCW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4 Type of diode: TVS array Max. off-state voltage: 5.5V Breakdown voltage: 6.5V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: SC88 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Version: ESD Number of channels: 4 |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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| NUP4114UPXV6T1G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| NUP4114UPXV6T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape Type of diode: TVS array Semiconductor structure: unidirectional Mounting: SMD Case: SOT563 Number of channels: 4 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZNUP4114UCLW1T2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 6.5V Semiconductor structure: unidirectional Mounting: SMD Case: SC88 Max. off-state voltage: 5.5V Number of channels: 4 Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SS12FP | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward impulse current: 30A Max. forward voltage: 0.45V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123HE Type of diode: Schottky rectifying |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NZT7053 | ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223 Mounting: SMD Type of transistor: NPN Kind of package: reel; tape Case: SOT223 Frequency: 200MHz Collector current: 1.5A Collector-emitter voltage: 100V Power dissipation: 1W Polarisation: bipolar Kind of transistor: Darlington |
на замовлення 3820 шт: термін постачання 14-30 дні (днів) |
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NDS9948 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8 Mounting: SMD Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: SO8 On-state resistance: 0.5Ω Power dissipation: 2W Gate charge: 13nC Polarisation: unipolar Technology: PowerTrench® Drain current: -2A |
на замовлення 1085 шт: термін постачання 14-30 дні (днів) |
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NDC7003P | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.34A Power dissipation: 0.96W Case: SuperSOT-6 On-state resistance: 10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 2.2nC Technology: PowerTrench® Gate-source voltage: ±20V |
на замовлення 2267 шт: термін постачання 14-30 дні (днів) |
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NTD20P06LT4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -15.5A Power dissipation: 65W Case: DPAK On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 26nC Gate-source voltage: ±20V |
на замовлення 513 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F On-state resistance: 400/500mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5/1.7nC Kind of transistor: complementary pair Gate-source voltage: ±6V |
на замовлення 167 шт: термін постачання 14-30 дні (днів) |
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NDT452AP | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Power dissipation: 3W Case: SOT223 On-state resistance: 0.13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 2273 шт: термін постачання 14-30 дні (днів) |
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NDC7001C | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 0.51/-0.34A Power dissipation: 0.96W Case: SuperSOT-6 On-state resistance: 4/10Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.5/2.2nC Kind of transistor: complementary pair Gate-source voltage: ±20V |
на замовлення 242 шт: термін постачання 14-30 дні (днів) |
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NTZD3155CT2G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 0.39/-0.31A Power dissipation: 0.25W Case: SOT563F On-state resistance: 0.55/0.9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Kind of transistor: complementary pair Gate-source voltage: ±6V |
на замовлення 3458 шт: термін постачання 14-30 дні (днів) |
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NVJD5121NT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 3026 шт: термін постачання 14-30 дні (днів) |
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NVMFS5113PLT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -45A Power dissipation: 75W Case: DFN5x6 On-state resistance: 14mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 921 шт: термін постачання 14-30 дні (днів) |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 1.25W Case: SOT23 On-state resistance: 0.15Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 7.4nC Gate-source voltage: ±12V |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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NJW3281G | ONSEMI |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 250V Collector current: 15A Power dissipation: 200W Case: TO3P Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz Application: automotive industry |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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NTD25P03LT4G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC Gate-source voltage: ±15V |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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NTR4502PT1G | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.56A Power dissipation: 1.25W Case: SOT23 On-state resistance: 0.35Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 6nC Gate-source voltage: ±20V |
на замовлення 1767 шт: термін постачання 14-30 дні (днів) |
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DTC124XET1G | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ Base resistor: 22kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Current gain: 80...150 Kind of package: reel; tape Base-emitter resistor: 47kΩ Case: SC75; SOT416 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V |
на замовлення 2430 шт: термін постачання 14-30 дні (днів) |
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J176-D74Z | ONSEMI |
Category: THT P channel transistorsDescription: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA Type of transistor: P-JFET Polarisation: unipolar Drain current: 2mA Power dissipation: 0.35W Case: TO92 Gate-source voltage: 30V On-state resistance: 250Ω Mounting: THT Kind of package: Ammo Pack Gate current: 50mA |
на замовлення 1609 шт: термін постачання 14-30 дні (днів) |
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| UESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Max. off-state voltage: 3.3V Breakdown voltage: 5V Semiconductor structure: common anode; double Case: SOT723 Mounting: SMD Kind of package: reel; tape Number of channels: 2 |
на замовлення 4655 шт: термін постачання 14-30 дні (днів) |
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| ESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SRDA3.3-4DR2G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SO8 Max. off-state voltage: 3.3V Number of channels: 4 Kind of package: reel; tape Peak pulse power dissipation: 0.5kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SZESD9X3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SZESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry Type of diode: TVS Breakdown voltage: 5V Semiconductor structure: unidirectional Mounting: SMD Case: SOD923F Max. off-state voltage: 3.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESD9C3.3ST5G | ONSEMI |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; ESD; 5V; SOD923; reel,tape Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 5V Case: SOD923 Mounting: SMD Kind of package: reel; tape Version: ESD |
на замовлення 8005 шт: термін постачання 14-30 дні (днів) |
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| SZUESD3.3DT5G | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape Type of diode: TVS array Breakdown voltage: 5V Semiconductor structure: common anode; double Mounting: SMD Case: SOT723 Max. off-state voltage: 3.3V Number of channels: 2 Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MC74AC273DWR2G | ONSEMI |
Category: Flip-FlopsDescription: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Mounting: SMD Case: SO20-W Operating temperature: -40...85°C Trigger: positive-edge-triggered Number of channels: 8 Supply voltage: 2...6V DC Technology: CMOS |
на замовлення 1497 шт: термін постачання 14-30 дні (днів) |
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| 15GN03CA-TB-E | ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 10V Collector current: 70mA Power dissipation: 0.2W Case: SC59 Mounting: SMD Kind of package: reel; tape Frequency: 1.5GHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RB520S30T1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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RB520S30T5G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SZMMSZ4700T1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MMSZ4xxTxG Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
1SMA5938BT3G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape Type of diode: Zener Power dissipation: 1.5W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SMA Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMA59xxBT3G |
на замовлення 4372 шт: термін постачання 14-30 дні (днів) |
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MMSZ5258BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Kind of package: reel; tape Case: SOD123 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
на замовлення 3840 шт: термін постачання 14-30 дні (днів) |
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FDN340P | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -10A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 5967 шт: термін постачання 14-30 дні (днів) |
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GBU6K | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Max. forward impulse current: 175A Max. forward voltage: 1V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 6A Kind of package: tube Case: GBU Type of bridge rectifier: single-phase |
на замовлення 682 шт: термін постачання 14-30 дні (днів) |
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GBU6D | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
GBU6J | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
GBU6B | ONSEMI |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.1kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
MM5Z12VT5G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Kind of package: reel; tape Semiconductor structure: single diode Manufacturer series: MM5Z |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||||||
| SZMM5Z12VT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD523F Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM5ZxxT1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
US1KFA | ONSEMI |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| MURS110T3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 35ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.875V
Kind of package: reel; tape
Reverse recovery time: 35ns
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| FDMS007N08LC |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX79C5V1-T50A |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; Ammo Pack; CASE017AG; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Kind of package: Ammo Pack
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX79C
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| NSVDTC123JET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Current gain: 80...140
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 47kΩ
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| 2N7002V |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.28A; Idm: 1.5A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.28A
Pulsed drain current: 1.5A
Power dissipation: 0.25W
Case: SOT563F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| NCV8406ASTT1G |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
на замовлення 542 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 79.48 грн |
| 10+ | 55.35 грн |
| MC74LVX4051DTG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 11+ | 40.59 грн |
| MC74LVX4051DG |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
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| MC74LVX4051DR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: SOIC16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| MC74LVX4051DTR2G |
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Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,analog,demultiplexer,multiplexer; Ch: 1; IN: 8
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; analog; demultiplexer; multiplexer
Number of channels: 1
Case: TSSOP16
Supply voltage: -6...0V DC; 2.5...6V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Technology: CMOS
Manufacturer series: LVX
Number of inputs: 8
Family: LVX
товару немає в наявності
Мінімальне замовлення: 2500 шт
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од. на суму грн.
| FSV15100V |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 100V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: TO277
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. forward impulse current: 250A
Kind of package: reel; tape
на замовлення 2997 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 48.77 грн |
| 15+ | 29.27 грн |
| 100+ | 29.18 грн |
| NTLJS3D0N02P8ZTAG |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 20.2A; Idm: 81A; 2.4W; WDFN6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20.2A
Pulsed drain current: 81A
Power dissipation: 2.4W
Case: WDFN6
Gate-source voltage: ±12V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| MC14052BDTR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer,SPDT; 4: 1; Ch: 2
Type of integrated circuit: analog switch
Output configuration: 4:1
Number of channels: 2
Case: TSSOP16
Supply voltage: 3...18V
Mounting: SMD
Resistance: 80Ω
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of integrated circuit: demultiplexer; multiplexer; SPDT
Technology: CMOS
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| MC14052BDR2G |
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Виробник: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 3÷18VDC
Type of integrated circuit: analog switch
Number of channels: 2
Case: SO16
Supply voltage: 3...18V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Quiescent current: 600µA
Kind of output: DP4T
Kind of integrated circuit: demultiplexer; multiplexer
Technology: CMOS
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| NTP185N60S5H |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 800 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 160.76 грн |
| NSVDTA144WET1G |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 80...140
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| NUP2114UPXV5T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; ESD; SOT553; Ch: 2; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT553
Number of channels: 2
Kind of package: reel; tape
Version: ESD
на замовлення 942 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 20.77 грн |
| 26+ | 16.27 грн |
| 30+ | 14.26 грн |
| 50+ | 10.65 грн |
| 100+ | 9.64 грн |
| 250+ | 8.97 грн |
| NUP4114UCW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Number of channels: 4
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; 12A; unidirectional; ESD; SC88; Ch: 4
Type of diode: TVS array
Max. off-state voltage: 5.5V
Breakdown voltage: 6.5V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: SC88
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Version: ESD
Number of channels: 4
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 17+ | 25.49 грн |
| 20+ | 21.72 грн |
| 50+ | 13.92 грн |
| NUP4114UPXV6T1G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| NUP4114UPXV6T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; unidirectional; SOT563; Ch: 4; reel,tape
Type of diode: TVS array
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT563
Number of channels: 4
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SZNUP4114UCLW1T2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.5V; unidirectional; SC88; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SC88
Max. off-state voltage: 5.5V
Number of channels: 4
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SS12FP |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123HE; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Max. forward voltage: 0.45V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Type of diode: Schottky rectifying
товару немає в наявності
В кошику
од. на суму грн.
| NZT7053 |
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Виробник: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 1.5A; 1W; SOT223
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SOT223
Frequency: 200MHz
Collector current: 1.5A
Collector-emitter voltage: 100V
Power dissipation: 1W
Polarisation: bipolar
Kind of transistor: Darlington
на замовлення 3820 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 55.09 грн |
| 11+ | 39.58 грн |
| 13+ | 34.13 грн |
| 100+ | 20.63 грн |
| 250+ | 17.28 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.75 грн |
| NDS9948 |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.5Ω
Power dissipation: 2W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -2A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2A; 2W; SO8
Mounting: SMD
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SO8
On-state resistance: 0.5Ω
Power dissipation: 2W
Gate charge: 13nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -2A
на замовлення 1085 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 77.67 грн |
| 8+ | 54.18 грн |
| 10+ | 47.97 грн |
| 50+ | 35.89 грн |
| 100+ | 31.45 грн |
| 500+ | 22.81 грн |
| NDC7003P |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.2nC
Technology: PowerTrench®
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.2nC
Technology: PowerTrench®
Gate-source voltage: ±20V
на замовлення 2267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 36.13 грн |
| 21+ | 20.46 грн |
| 50+ | 15.10 грн |
| 100+ | 13.25 грн |
| 500+ | 9.90 грн |
| 1000+ | 8.72 грн |
| 1500+ | 8.13 грн |
| NTD20P06LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26nC
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -15.5A
Power dissipation: 65W
Case: DPAK
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 26nC
Gate-source voltage: ±20V
на замовлення 513 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 115.60 грн |
| 7+ | 67.93 грн |
| 10+ | 59.71 грн |
| 20+ | 53.17 грн |
| 50+ | 46.13 грн |
| 100+ | 41.76 грн |
| 200+ | 37.99 грн |
| 500+ | 33.80 грн |
| NTZD3155CT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
On-state resistance: 400/500mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5/1.7nC
Kind of transistor: complementary pair
Gate-source voltage: ±6V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
On-state resistance: 400/500mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5/1.7nC
Kind of transistor: complementary pair
Gate-source voltage: ±6V
на замовлення 167 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.29 грн |
| 22+ | 19.62 грн |
| 50+ | 12.75 грн |
| 100+ | 10.57 грн |
| NDT452AP |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5A; 3W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Power dissipation: 3W
Case: SOT223
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 2273 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 102.96 грн |
| 6+ | 72.12 грн |
| 10+ | 63.32 грн |
| 50+ | 46.55 грн |
| 100+ | 40.93 грн |
| 500+ | 39.50 грн |
| NDC7001C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
On-state resistance: 4/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5/2.2nC
Kind of transistor: complementary pair
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
On-state resistance: 4/10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.5/2.2nC
Kind of transistor: complementary pair
Gate-source voltage: ±20V
на замовлення 242 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.67 грн |
| 14+ | 30.86 грн |
| 50+ | 22.73 грн |
| 100+ | 19.79 грн |
| NTZD3155CT2G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Gate-source voltage: ±6V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 0.39/-0.31A
Power dissipation: 0.25W
Case: SOT563F
On-state resistance: 0.55/0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Kind of transistor: complementary pair
Gate-source voltage: ±6V
на замовлення 3458 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.00 грн |
| 25+ | 16.77 грн |
| 33+ | 12.92 грн |
| 100+ | 8.89 грн |
| 500+ | 6.79 грн |
| NVJD5121NT1G |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.212A
Power dissipation: 0.25W
Case: SC70-6; SC88; SOT363
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 3026 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.39 грн |
| 28+ | 15.43 грн |
| 32+ | 13.25 грн |
| 50+ | 9.81 грн |
| 100+ | 8.97 грн |
| 500+ | 7.38 грн |
| 1000+ | 6.79 грн |
| 3000+ | 6.12 грн |
| NVMFS5113PLT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -45A; 75W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -45A
Power dissipation: 75W
Case: DFN5x6
On-state resistance: 14mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 921 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 254.69 грн |
| 10+ | 120.77 грн |
| 50+ | 107.35 грн |
| 100+ | 102.32 грн |
| 500+ | 99.80 грн |
| NTR4171PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.4nC
Gate-source voltage: ±12V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 1.25W
Case: SOT23
On-state resistance: 0.15Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.4nC
Gate-source voltage: ±12V
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.93 грн |
| 16+ | 26.84 грн |
| 18+ | 23.48 грн |
| 25+ | 19.54 грн |
| NJW3281G |
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Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 250V; 15A; 200W; TO3P
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 250V
Collector current: 15A
Power dissipation: 200W
Case: TO3P
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Application: automotive industry
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 265.85 грн |
| NTD25P03LT4G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Gate-source voltage: ±15V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Gate-source voltage: ±15V
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 95.74 грн |
| 7+ | 69.61 грн |
| 10+ | 61.22 грн |
| 50+ | 50.32 грн |
| NTR4502PT1G |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.56A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.56A
Power dissipation: 1.25W
Case: SOT23
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
Gate-source voltage: ±20V
на замовлення 1767 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.80 грн |
| 23+ | 18.28 грн |
| 28+ | 15.10 грн |
| 50+ | 10.15 грн |
| 100+ | 8.89 грн |
| 250+ | 7.72 грн |
| 500+ | 7.04 грн |
| 1000+ | 6.54 грн |
| DTC124XET1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416; R1: 22kΩ
Base resistor: 22kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
на замовлення 2430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.84 грн |
| 52+ | 8.22 грн |
| 60+ | 7.04 грн |
| 106+ | 3.97 грн |
| 500+ | 2.80 грн |
| 1000+ | 2.46 грн |
| J176-D74Z |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Power dissipation: 0.35W
Case: TO92
Gate-source voltage: 30V
On-state resistance: 250Ω
Mounting: THT
Kind of package: Ammo Pack
Gate current: 50mA
на замовлення 1609 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 42.45 грн |
| 22+ | 19.46 грн |
| 25+ | 17.61 грн |
| 50+ | 16.27 грн |
| 100+ | 15.01 грн |
| 250+ | 13.25 грн |
| 500+ | 11.99 грн |
| 1000+ | 10.73 грн |
| UESD3.3DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
на замовлення 4655 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 25+ | 17.44 грн |
| 30+ | 14.34 грн |
| 38+ | 11.24 грн |
| 50+ | 9.56 грн |
| 100+ | 8.39 грн |
| 500+ | 6.96 грн |
| ESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; reel,tape
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
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| SRDA3.3-4DR2G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 500W; unidirectional; SO8; Ch: 4; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SO8
Max. off-state voltage: 3.3V
Number of channels: 4
Kind of package: reel; tape
Peak pulse power dissipation: 0.5kW
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| SZESD9X3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| SZESD9C3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5V; unidirectional; SOD923F; automotive industry
Type of diode: TVS
Breakdown voltage: 5V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD923F
Max. off-state voltage: 3.3V
Kind of package: reel; tape
Application: automotive industry
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| ESD9C3.3ST5G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5V; SOD923; reel,tape
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 5V
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Version: ESD
на замовлення 8005 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.06 грн |
| 42+ | 10.06 грн |
| 55+ | 7.65 грн |
| 68+ | 6.21 грн |
| 100+ | 5.08 грн |
| 500+ | 3.44 грн |
| 1000+ | 3.01 грн |
| 2500+ | 2.94 грн |
| SZUESD3.3DT5G |
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Виробник: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; double,common anode; SOT723; Ch: 2; reel,tape
Type of diode: TVS array
Breakdown voltage: 5V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Number of channels: 2
Kind of package: reel; tape
Application: automotive industry
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| MC74AC273DWR2G |
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Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Number of channels: 8
Supply voltage: 2...6V DC
Technology: CMOS
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; SMD; SO20-W
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Mounting: SMD
Case: SO20-W
Operating temperature: -40...85°C
Trigger: positive-edge-triggered
Number of channels: 8
Supply voltage: 2...6V DC
Technology: CMOS
на замовлення 1497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 86.70 грн |
| 10+ | 56.19 грн |
| 25+ | 48.39 грн |
| 100+ | 40.59 грн |
| 250+ | 38.41 грн |
| 500+ | 37.15 грн |
| 1000+ | 35.56 грн |
| 15GN03CA-TB-E |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 10V; 0.07A; 0.2W; SC59
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 10V
Collector current: 70mA
Power dissipation: 0.2W
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Frequency: 1.5GHz
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| RB520S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| RB520S30T5G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
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| SZMMSZ4700T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MMSZ4xxTxG
Application: automotive industry
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| 1SMA5938BT3G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 36V; SMD; SMA; single diode; reel,tape
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMA59xxBT3G
на замовлення 4372 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 30.71 грн |
| 25+ | 17.11 грн |
| 50+ | 11.91 грн |
| 100+ | 10.40 грн |
| 250+ | 8.81 грн |
| 500+ | 7.88 грн |
| 1000+ | 7.63 грн |
| MMSZ5258BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; SMD; SOD123; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
на замовлення 3840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.32 грн |
| 99+ | 4.28 грн |
| 125+ | 3.35 грн |
| 193+ | 2.18 грн |
| 3000+ | 1.81 грн |
| FDN340P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -10A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 5967 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.61 грн |
| 25+ | 25.33 грн |
| 50+ | 22.06 грн |
| 75+ | 19.62 грн |
| 100+ | 17.70 грн |
| 250+ | 11.99 грн |
| 500+ | 8.97 грн |
| 1000+ | 7.63 грн |
| 1500+ | 7.21 грн |
| GBU6K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Max. forward impulse current: 175A
Max. forward voltage: 1V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 6A
Kind of package: tube
Case: GBU
Type of bridge rectifier: single-phase
на замовлення 682 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 126.44 грн |
| 10+ | 77.16 грн |
| 20+ | 68.77 грн |
| 100+ | 53.67 грн |
| GBU6D |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| GBU6J |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6B |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.1kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| MM5Z12VT5G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; reel,tape; single diode; MM5Z
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Kind of package: reel; tape
Semiconductor structure: single diode
Manufacturer series: MM5Z
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Мінімальне замовлення: 8000 шт
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| SZMM5Z12VT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD523F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD523F
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM5ZxxT1G
Application: automotive industry
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| US1KFA |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SOD123F; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.7V
Kind of package: reel; tape
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