Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BAV23CLT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.4A Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 9A Max. forward voltage: 1.25V Reverse recovery time: 150ns |
на замовлення 24 шт: термін постачання 21-30 дні (днів) |
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BAS16LT1G | ONSEMI |
![]() Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape Leakage current: 50µA |
на замовлення 7066 шт: термін постачання 21-30 дні (днів) |
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LM393DR2G | ONSEMI |
![]() ![]() Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8 Type of integrated circuit: comparator Number of comparators: 2 Kind of comparator: universal Mounting: SMT Case: SO8 Operating voltage: 2...36V |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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MC78L12ACPG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; MC78L00A Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 12V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 14.5...27V Manufacturer series: MC78L00A |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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FDA69N25 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 44.2A Pulsed drain current: 276A Power dissipation: 480W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 41mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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NTD3055L104T4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK Mounting: SMD Case: DPAK Drain-source voltage: 60V Drain current: 12A On-state resistance: 0.104Ω Type of transistor: N-MOSFET Power dissipation: 48W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±15V Pulsed drain current: 45A |
на замовлення 963 шт: термін постачання 21-30 дні (днів) |
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KA7552A | ONSEMI |
![]() Description: IC: PMIC; PWM controller; Uout: 1.3÷18VDC; DIP8; tube Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output voltage: 1.3...18V DC Output current: 1.5A Frequency: 0.6MHz Mounting: THT Case: DIP8 Number of channels: 1 Kind of package: tube Operating voltage: 8.7...30V DC |
на замовлення 1710 шт: термін постачання 21-30 дні (днів) |
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BC849CLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
на замовлення 502 шт: термін постачання 21-30 дні (днів) |
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MC14017BDG | ONSEMI |
![]() Description: IC: digital; decade counter; CMOS; SMD; SO16 Type of integrated circuit: digital Technology: CMOS Kind of integrated circuit: decade counter Mounting: SMD Case: SO16 |
на замовлення 384 шт: термін постачання 21-30 дні (днів) |
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MC14017BDR2G | ONSEMI |
![]() Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: decade counter Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SOIC16 Supply voltage: 3...18V DC Kind of package: reel; tape Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FQD17P06TM | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2534 шт: термін постачання 21-30 дні (днів) |
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FQP17P06 | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -12A Power dissipation: 79W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 0.12Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
на замовлення 191 шт: термін постачання 21-30 дні (днів) |
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FQU17P06TU | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -7.6A Power dissipation: 44W Case: IPAK Gate-source voltage: ±25V On-state resistance: 135mΩ Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESD8351XV2T1G | ONSEMI |
![]() Description: Diode: TVS; 7V; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 3.3V Breakdown voltage: 7V Case: SOD523 Mounting: SMD Kind of package: reel; tape Version: ESD |
на замовлення 216 шт: термін постачання 21-30 дні (днів) |
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FOD852300W | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4 Type of optocoupler: optocoupler Insulation voltage: 5kV Kind of output: Darlington Case: DIP4 Mounting: THT Number of channels: 1 Turn-on time: 0.1ms Turn-off time: 20µs CTR@If: 1000-15000%@1mA |
на замовлення 252 шт: термін постачання 21-30 дні (днів) |
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RB521S30T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Max. forward voltage: 0.5V |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V8LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 2µA |
на замовлення 1464 шт: термін постачання 21-30 дні (днів) |
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MUR120RLG | ONSEMI |
![]() ![]() Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Max. forward voltage: 0.875V Reverse recovery time: 35ns Max. load current: 1A |
на замовлення 2161 шт: термін постачання 21-30 дні (днів) |
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CAT24C16YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 16kb EEPROM Interface: I2C Memory organisation: 2048x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4006FFG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 3000pcs. |
на замовлення 4299 шт: термін постачання 21-30 дні (днів) |
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1N4006RLG | ONSEMI |
![]() Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Max. forward impulse current: 30A Case: CASE59 Max. forward voltage: 1.1V Quantity in set/package: 5000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FCH040N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 136nC Kind of package: tube Polarisation: unipolar Drain current: 41A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 40mΩ Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FCHD040N65S3-F155 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247 Type of transistor: N-MOSFET Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 136nC Kind of package: tube Polarisation: unipolar Drain current: 41A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 35.4Ω/4mΩ Pulsed drain current: 162.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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NTH4L040N65S3F | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Power dissipation: 446W Case: TO247 Mounting: THT Gate charge: 158nC Kind of package: tube Polarisation: unipolar Drain current: 45A Drain-source voltage: 650V Kind of channel: enhancement Gate-source voltage: ±30V On-state resistance: 32mΩ Pulsed drain current: 162.5A |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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MC79M12BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 0.5A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Number of channels: 1 Kind of package: reel; tape Voltage drop: 1.1V Tolerance: ±4% Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC79M12BTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: -12V Output current: 0.5A Case: TO220AB Mounting: THT Operating temperature: -40...125°C Number of channels: 1 Kind of package: tube Voltage drop: 1.3V Tolerance: ±4% Heatsink thickness: 0.508...0.61mm Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14043BDG | ONSEMI |
![]() Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube Operating temperature: -40...85°C Type of integrated circuit: digital Number of channels: 4 Kind of output: 3-state Kind of package: tube Trigger: level-triggered Kind of integrated circuit: RS latch Mounting: SMD Case: SO16 Supply voltage: 3...18V DC |
на замовлення 32 шт: термін постачання 21-30 дні (днів) |
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RSL10-SENSE-DB-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX28TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 2.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX30TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752AMX33TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3.3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX18TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 1.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX28TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 2.8V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX30TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
NCP752BMX33TCG | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD Mounting: SMD Operating temperature: -40...125°C Case: XDFN6 Tolerance: ±2% Output voltage: 3.3V Output current: 0.2A Voltage drop: 0.55V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2...5.5V Manufacturer series: NCP752 Kind of voltage regulator: fixed; LDO; linear |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQD18N20V2TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 9.75A Power dissipation: 83W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 947 шт: термін постачання 21-30 дні (днів) |
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MMBD1501A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Capacitance: 4pF Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: single diode Max. forward impulse current: 2A Leakage current: 5µA Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Mounting: SMD Case: SOT23 |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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MMBD1505A | ONSEMI |
![]() Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A Mounting: SMD Max. off-state voltage: 200V Max. forward voltage: 1.15V Load current: 0.2A Semiconductor structure: common anode; double Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape Type of diode: switching Case: SOT23 Capacitance: 4pF |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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2N7002ET1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2N7002ET7G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.2A |
на замовлення 847 шт: термін постачання 21-30 дні (днів) |
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FDC6305N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6 Kind of package: reel; tape Gate charge: 5nC Technology: PowerTrench® Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±8V Polarisation: unipolar On-state resistance: 128mΩ Type of transistor: N-MOSFET x2 Drain-source voltage: 20V Power dissipation: 0.96W Drain current: 2.7A Case: SuperSOT-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
RSL10-SENSE-GEVK | ONSEMI |
![]() Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Type of development kit: evaluation Programmers and development kits features: Bluetooth board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C18LT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA Manufacturer series: BZX84C |
на замовлення 18978 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C18ET1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84CxxET1G Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
FDMS1D2N03DSD | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FQT4N20LTF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3307 шт: термін постачання 21-30 дні (днів) |
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MMBF170 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape On-state resistance: 1.2Ω Kind of channel: enhancement |
на замовлення 1420 шт: термін постачання 21-30 дні (днів) |
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MMBF170LT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.5A Power dissipation: 0.225W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 6700 шт: термін постачання 21-30 дні (днів) |
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MMBF4117 | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA Case: SOT23 Gate current: 50mA Drain current: 30µA Type of transistor: N-JFET Power dissipation: 0.225W Polarisation: unipolar Kind of package: reel; tape Gate-source voltage: -40V Mounting: SMD |
на замовлення 3533 шт: термін постачання 21-30 дні (днів) |
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1N5351BG | ONSEMI |
![]() Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: bulk Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
на замовлення 1003 шт: термін постачання 21-30 дні (днів) |
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1N5351BRLG | ONSEMI |
![]() Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA Type of diode: Zener Power dissipation: 5W Zener voltage: 14V Kind of package: reel; tape Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N53xxB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS21LT3G | ONSEMI |
![]() Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.3W Leakage current: 0.1mA Capacitance: 5pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N5242B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: bulk Case: CASE017AG Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N52xxB |
на замовлення 4103 шт: термін постачання 21-30 дні (днів) |
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MBRB2545CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.65V Max. load current: 30A Kind of package: reel; tape |
на замовлення 619 шт: термін постачання 21-30 дні (днів) |
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FDMC012N03 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BDW94C | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: bulk |
на замовлення 179 шт: термін постачання 21-30 дні (днів) |
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BDW94CFTU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 12A Power dissipation: 30W Case: TO220FP Current gain: 100...20000 Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MJL1302AG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264 Mounting: THT Kind of package: tube Frequency: 30MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC79M05BDTG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: tube Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
на замовлення 241 шт: термін постачання 21-30 дні (днів) |
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MC79M05BDTRKG | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.1V Output voltage: -5V Output current: 0.5A Case: DPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Manufacturer series: MC79M00 |
товару немає в наявності |
В кошику од. на суму грн. |
BAV23CLT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.4A; 150ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.4A
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Reverse recovery time: 150ns
на замовлення 24 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 16.28 грн |
BAS16LT1G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 7066 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.14 грн |
84+ | 4.65 грн |
143+ | 2.71 грн |
166+ | 2.34 грн |
210+ | 1.85 грн |
500+ | 1.33 грн |
1025+ | 0.89 грн |
2820+ | 0.84 грн |
LM393DR2G | ![]() |
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Виробник: ONSEMI
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Type of integrated circuit: comparator
Number of comparators: 2
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; 2÷36V; SMT; SO8
Type of integrated circuit: comparator
Number of comparators: 2
Kind of comparator: universal
Mounting: SMT
Case: SO8
Operating voltage: 2...36V
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.05 грн |
19+ | 20.46 грн |
23+ | 16.90 грн |
MC78L12ACPG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.1A; TO92; THT; MC78L00A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 12V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 14.5...27V
Manufacturer series: MC78L00A
на замовлення 796 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 37.56 грн |
16+ | 25.42 грн |
19+ | 21.01 грн |
50+ | 13.02 грн |
86+ | 10.62 грн |
237+ | 10.00 грн |
FDA69N25 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 44.2A; Idm: 276A; 480W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 44.2A
Pulsed drain current: 276A
Power dissipation: 480W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 330.57 грн |
5+ | 227.12 грн |
12+ | 214.71 грн |
25+ | 206.19 грн |
NTD3055L104T4G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 45A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 45A; 48W; DPAK
Mounting: SMD
Case: DPAK
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 0.104Ω
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±15V
Pulsed drain current: 45A
на замовлення 963 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 90.99 грн |
10+ | 61.31 грн |
24+ | 38.76 грн |
65+ | 36.66 грн |
500+ | 35.27 грн |
KA7552A |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output voltage: 1.3...18V DC
Output current: 1.5A
Frequency: 0.6MHz
Mounting: THT
Case: DIP8
Number of channels: 1
Kind of package: tube
Operating voltage: 8.7...30V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; PWM controller; Uout: 1.3÷18VDC; DIP8; tube
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output voltage: 1.3...18V DC
Output current: 1.5A
Frequency: 0.6MHz
Mounting: THT
Case: DIP8
Number of channels: 1
Kind of package: tube
Operating voltage: 8.7...30V DC
на замовлення 1710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 24.80 грн |
25+ | 23.72 грн |
100+ | 22.71 грн |
105+ | 22.56 грн |
500+ | 21.70 грн |
BC849CLT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 502 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
59+ | 7.16 грн |
109+ | 3.57 грн |
155+ | 2.51 грн |
176+ | 2.21 грн |
MC14017BDG |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
Category: Counters/dividers
Description: IC: digital; decade counter; CMOS; SMD; SO16
Type of integrated circuit: digital
Technology: CMOS
Kind of integrated circuit: decade counter
Mounting: SMD
Case: SO16
на замовлення 384 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 36.73 грн |
13+ | 30.08 грн |
31+ | 29.38 грн |
48+ | 27.44 грн |
96+ | 26.74 грн |
MC14017BDR2G |
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Виробник: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: decade counter
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
FQD17P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2534 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 66.78 грн |
10+ | 52.79 грн |
24+ | 39.53 грн |
64+ | 37.21 грн |
500+ | 35.89 грн |
FQP17P06 |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; 79W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 79W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 191 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 146.08 грн |
10+ | 98.44 грн |
12+ | 80.61 грн |
32+ | 75.96 грн |
FQU17P06TU |
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Виробник: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -7.6A; 44W; IPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -7.6A
Power dissipation: 44W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
ESD8351XV2T1G |
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Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 7V; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 3.3V
Breakdown voltage: 7V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Version: ESD
на замовлення 216 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.19 грн |
41+ | 9.53 грн |
53+ | 7.38 грн |
100+ | 4.77 грн |
FOD852300W |
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Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Turn-on time: 0.1ms
Turn-off time: 20µs
CTR@If: 1000-15000%@1mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; 5kV; DIP4
Type of optocoupler: optocoupler
Insulation voltage: 5kV
Kind of output: Darlington
Case: DIP4
Mounting: THT
Number of channels: 1
Turn-on time: 0.1ms
Turn-off time: 20µs
CTR@If: 1000-15000%@1mA
на замовлення 252 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.63 грн |
9+ | 46.51 грн |
23+ | 41.08 грн |
62+ | 38.76 грн |
100+ | 37.52 грн |
RB521S30T1G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.5V
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.53 грн |
88+ | 4.42 грн |
127+ | 3.07 грн |
149+ | 2.61 грн |
674+ | 1.34 грн |
1852+ | 1.27 грн |
BZX84C6V8LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 2µA
на замовлення 1464 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
87+ | 4.50 грн |
107+ | 3.64 грн |
186+ | 2.09 грн |
228+ | 1.71 грн |
710+ | 1.28 грн |
MUR120RLG | ![]() |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; bulk; DO41; Ufmax: 0.875V; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Max. forward voltage: 0.875V
Reverse recovery time: 35ns
Max. load current: 1A
на замовлення 2161 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 19.20 грн |
31+ | 12.71 грн |
100+ | 9.46 грн |
126+ | 7.21 грн |
345+ | 6.82 грн |
CAT24C16YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; I2C; 2048x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 16kb EEPROM
Interface: I2C
Memory organisation: 2048x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 900ns
Kind of package: reel; tape
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1N4006FFG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 3000pcs.
на замовлення 4299 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
321+ | 1.30 грн |
417+ | 0.93 грн |
432+ | 0.90 грн |
455+ | 0.85 грн |
500+ | 0.82 грн |
1N4006RLG |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; reel,tape; Ifsm: 30A; CASE59
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Case: CASE59
Max. forward voltage: 1.1V
Quantity in set/package: 5000pcs.
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FCH040N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Pulsed drain current: 162.5A
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FCHD040N65S3-F155 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 41A; Idm: 162.5A; 417W; TO247
Type of transistor: N-MOSFET
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Polarisation: unipolar
Drain current: 41A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 35.4Ω/4mΩ
Pulsed drain current: 162.5A
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NTH4L040N65S3F |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Power dissipation: 446W
Case: TO247
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Polarisation: unipolar
Drain current: 45A
Drain-source voltage: 650V
Kind of channel: enhancement
Gate-source voltage: ±30V
On-state resistance: 32mΩ
Pulsed drain current: 162.5A
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1156.99 грн |
3+ | 1016.21 грн |
MC79M12BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage drop: 1.1V
Tolerance: ±4%
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: reel; tape
Voltage drop: 1.1V
Tolerance: ±4%
Manufacturer series: MC79M00
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MC79M12BTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage drop: 1.3V
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -12V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: -12V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Operating temperature: -40...125°C
Number of channels: 1
Kind of package: tube
Voltage drop: 1.3V
Tolerance: ±4%
Heatsink thickness: 0.508...0.61mm
Manufacturer series: MC79M00
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MC14043BDG |
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Виробник: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Operating temperature: -40...85°C
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Kind of package: tube
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
на замовлення 32 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 77.63 грн |
10+ | 44.49 грн |
25+ | 36.20 грн |
RSL10-SENSE-DB-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
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NCP752AMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX30TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752AMX33TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX18TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 1.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX28TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 2.8V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX30TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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NCP752BMX33TCG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 200mA; XDFN6; SMD
Mounting: SMD
Operating temperature: -40...125°C
Case: XDFN6
Tolerance: ±2%
Output voltage: 3.3V
Output current: 0.2A
Voltage drop: 0.55V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2...5.5V
Manufacturer series: NCP752
Kind of voltage regulator: fixed; LDO; linear
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FQD18N20V2TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9.75A; 83W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9.75A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 947 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 93.49 грн |
10+ | 72.09 грн |
19+ | 49.61 грн |
51+ | 46.51 грн |
500+ | 44.96 грн |
MMBD1501A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Capacitance: 4pF
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Leakage current: 5µA
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Mounting: SMD
Case: SOT23
на замовлення 165 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.69 грн |
47+ | 8.37 грн |
59+ | 6.67 грн |
72+ | 5.44 грн |
100+ | 4.44 грн |
MMBD1505A |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 0.2A; SOT23; Ufmax: 1.15V; Ifsm: 2A
Mounting: SMD
Max. off-state voltage: 200V
Max. forward voltage: 1.15V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Capacitance: 4pF
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 20.03 грн |
32+ | 12.25 грн |
50+ | 9.07 грн |
100+ | 8.01 грн |
2N7002ET1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
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2N7002ET7G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.2A
на замовлення 847 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.18 грн |
61+ | 6.36 грн |
92+ | 4.25 грн |
109+ | 3.56 грн |
604+ | 1.51 грн |
FDC6305N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Gate charge: 5nC
Technology: PowerTrench®
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
On-state resistance: 128mΩ
Type of transistor: N-MOSFET x2
Drain-source voltage: 20V
Power dissipation: 0.96W
Drain current: 2.7A
Case: SuperSOT-6
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Kind of package: reel; tape
Gate charge: 5nC
Technology: PowerTrench®
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±8V
Polarisation: unipolar
On-state resistance: 128mΩ
Type of transistor: N-MOSFET x2
Drain-source voltage: 20V
Power dissipation: 0.96W
Drain current: 2.7A
Case: SuperSOT-6
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RSL10-SENSE-GEVK |
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Виробник: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Type of development kit: evaluation
Programmers and development kits features: Bluetooth board
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BZX84C18LT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX84C
на замовлення 18978 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
55+ | 7.72 грн |
100+ | 3.88 грн |
146+ | 2.67 грн |
174+ | 2.24 грн |
937+ | 0.97 грн |
2580+ | 0.91 грн |
3000+ | 0.90 грн |
9000+ | 0.88 грн |
SZBZX84C18ET1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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FDMS1D2N03DSD |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQT4N20LTF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3307 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.95 грн |
10+ | 45.04 грн |
35+ | 26.20 грн |
96+ | 24.80 грн |
500+ | 24.18 грн |
1000+ | 23.87 грн |
MMBF170 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.2Ω
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 1.2Ω
Kind of channel: enhancement
на замовлення 1420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.70 грн |
33+ | 12.01 грн |
50+ | 8.45 грн |
100+ | 7.30 грн |
217+ | 4.22 грн |
595+ | 3.99 грн |
MMBF170LT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.5A; 0.225W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 6700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
24+ | 17.53 грн |
38+ | 10.31 грн |
57+ | 6.84 грн |
100+ | 5.71 грн |
249+ | 3.66 грн |
683+ | 3.46 грн |
1000+ | 3.33 грн |
MMBF4117 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Case: SOT23
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30uA; 225mW; SOT23; Igt: 50mA
Case: SOT23
Gate current: 50mA
Drain current: 30µA
Type of transistor: N-JFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Gate-source voltage: -40V
Mounting: SMD
на замовлення 3533 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 40.90 грн |
16+ | 25.58 грн |
25+ | 20.31 грн |
80+ | 11.39 грн |
219+ | 10.77 грн |
1N5351BG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; bulk; CASE017AA; single diode; 1uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
на замовлення 1003 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 51.76 грн |
11+ | 35.35 грн |
13+ | 30.23 грн |
63+ | 14.40 грн |
174+ | 13.61 грн |
1000+ | 13.18 грн |
1N5351BRLG |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 14V; reel,tape; CASE017AA; single diode; 1uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 14V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N53xxB
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BAS21LT3G |
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Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.3W
Leakage current: 0.1mA
Capacitance: 5pF
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1N5242B |
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Виробник: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; bulk; CASE017AG; single diode; 1uA; 1N52xxB
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N52xxB
на замовлення 4103 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.51 грн |
79+ | 4.96 грн |
124+ | 3.15 грн |
149+ | 2.61 грн |
500+ | 1.84 грн |
657+ | 1.38 грн |
1806+ | 1.31 грн |
MBRB2545CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.65V
Max. load current: 30A
Kind of package: reel; tape
на замовлення 619 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.04 грн |
10+ | 85.27 грн |
13+ | 75.19 грн |
34+ | 70.54 грн |
100+ | 68.21 грн |
FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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BDW94C |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 80W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: bulk
на замовлення 179 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 95.16 грн |
8+ | 52.86 грн |
23+ | 40.54 грн |
25+ | 40.46 грн |
62+ | 38.29 грн |
BDW94CFTU |
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Виробник: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 12A; 30W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 12A
Power dissipation: 30W
Case: TO220FP
Current gain: 100...20000
Mounting: THT
Kind of package: tube
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MJL1302AG |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 260V; 15A; 200W; TO264
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264
Mounting: THT
Kind of package: tube
Frequency: 30MHz
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MC79M05BDTG |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
на замовлення 241 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 69.29 грн |
10+ | 44.65 грн |
25+ | 34.88 грн |
39+ | 23.41 грн |
107+ | 22.17 грн |
MC79M05BDTRKG |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -5V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Manufacturer series: MC79M00
товару немає в наявності
В кошику
од. на суму грн.