| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FQD11P06TM | ONSEMI |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.95A Power dissipation: 38W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 624 шт: термін постачання 21-30 дні (днів) |
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ESD5Z2.5T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD Type of diode: TVS Max. off-state voltage: 2.5V Breakdown voltage: 4V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 120W Max. forward impulse current: 11A Leakage current: 6µA Version: ESD |
на замовлення 3880 шт: термін постачання 21-30 дні (днів) |
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MC14504BDG | ONSEMI |
 Category: Level translatorsDescription: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Kind of integrated circuit: level shifter Mounting: SMD Case: SO16 |
на замовлення 187 шт: термін постачання 21-30 дні (днів) |
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MC74HC1G32DTT1G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns Type of integrated circuit: digital Kind of gate: OR Number of channels: single; 1 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSOP5 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HC Delay time: 20ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1SMB5929BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1SMB59xxBT3G |
на замовлення 2001 шт: термін постачання 21-30 дні (днів) |
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NL27WZ16DTT1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC Type of integrated circuit: digital Mounting: SMD Case: TSOP6 Operating temperature: -55...125°C Number of channels: 2 Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...5.5V DC |
на замовлення 1504 шт: термін постачання 21-30 дні (днів) |
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MMBTA55LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
на замовлення 1625 шт: термін постачання 21-30 дні (днів) |
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MC33164P-5G | ONSEMI |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open collector Active logical level: low Supply voltage: 1...10V DC Case: TO92 Operating temperature: -40...125°C Mounting: SMD DC supply current: 32µA Maximum output current: 50mA Threshold on-voltage: 4.33V Kind of package: bulk |
на замовлення 1294 шт: термін постачання 21-30 дні (днів) |
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| CAV93C56VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: Microwire Memory organisation: 256x8/128x16bit Operating voltage: 2.5...5.5V Clock frequency: 2MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 250ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MMBTA63LT1G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape |
на замовлення 2600 шт: термін постачання 21-30 дні (днів) |
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FDMS86252L | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 12A Power dissipation: 50W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2705 шт: термін постачання 21-30 дні (днів) |
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MC14082BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: dual; 2 Delay time: 130ns Kind of package: tube Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 4 Supply voltage: 3...18V DC |
на замовлення 443 шт: термін постачання 21-30 дні (днів) |
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MC14082BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: dual; 2 Delay time: 130ns Kind of package: reel; tape Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 4 Supply voltage: 3...18V DC |
на замовлення 2355 шт: термін постачання 21-30 дні (днів) |
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MC74LCXU04DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube Type of integrated circuit: digital Kind of integrated circuit: hex; inverter Kind of gate: NOT Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: SOIC14 Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of package: tube Family: LCXU Integrated circuit features: tolerates a voltage of 5V on the inputs |
на замовлення 263 шт: термін постачання 21-30 дні (днів) |
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1N914 | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.4A Reverse recovery time: 4ns Semiconductor structure: single diode Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 4A Kind of package: bulk Leakage current: 50µA Capacitance: 4pF |
на замовлення 6091 шт: термін постачання 21-30 дні (днів) |
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NTR4171PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7.4nC Kind of channel: enhancement Gate-source voltage: ±12V Case: SOT23 Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.15Ω Type of transistor: P-MOSFET |
на замовлення 315 шт: термін постачання 21-30 дні (днів) |
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| CAT25512HU5I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 40ns Clock frequency: 20MHz Operating temperature: -40...85°C Kind of interface: serial Operating voltage: 1.8...5.5V Memory: 512kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV24C64DTVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV24C64DWVLT3G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV24C64MUW3VLTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NV24C64UVLT2G | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 1.7...5.5V Clock frequency: 1MHz Mounting: SMD Case: US8 Kind of interface: serial Operating temperature: -40...125°C Access time: 400ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV24C64WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CAV24C64YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 64kb EEPROM Interface: I2C Memory organisation: 8kx8bit Operating voltage: 2.5...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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74VHC273MTCX | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Supply voltage: 2...5.5V DC Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered |
на замовлення 1730 шт: термін постачання 21-30 дні (днів) |
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MBRS2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Case: SMB Max. off-state voltage: 100V Max. load current: 130A Max. forward voltage: 0.65V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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SBAV70LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Reverse recovery time: 6ns Semiconductor structure: common cathode; double Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 31A Leakage current: 0.1mA Power dissipation: 0.3W Kind of package: reel; tape Application: automotive industry |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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MOC3053M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M Type of optocoupler: optotriac Insulation voltage: 4.17kV Output voltage: 600V Kind of output: triac; without zero voltage crossing driver Case: DIP6 Max. off-state voltage: 3V Trigger current: 6mA Mounting: THT Number of channels: 1 Manufacturer series: MOC3053M |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MC14511BDG | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16 Type of integrated circuit: digital Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch Mounting: SMD Case: SO16 Supply voltage: 3...18V DC Operating temperature: -40...85°C |
на замовлення 384 шт: термін постачання 21-30 дні (днів) |
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RFD14N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7964 шт: термін постачання 21-30 дні (днів) |
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| NCP1081DEG | ONSEMI |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC Type of integrated circuit: PoE PD controller Case: TSSOP20EP Mounting: SMD Operating temperature: -40...85°C Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at Supply voltage: 57V DC Number of ports: 1 Integrated circuit features: integrated DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NCP1083DEG | ONSEMI |
Category: ETHERNET interfaces -integrated circuits Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC Type of integrated circuit: PoE PD controller Case: TSSOP20EP Mounting: SMD Operating temperature: -40...85°C Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at Supply voltage: 57V DC Number of ports: 1 Integrated circuit features: integrated DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 74LCX16501MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX Type of integrated circuit: digital Kind of integrated circuit: 18bit; bus transceiver Number of channels: 18 Technology: CMOS Mounting: SMD Case: TSSOP56 Supply voltage: 1.5...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX Integrated circuit features: 5V tolerant on inputs/outputs Manufacturer series: LCX |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SBC847BLT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
на замовлення 1553 шт: термін постачання 21-30 дні (днів) |
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FDN360P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±20V On-state resistance: 136mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
на замовлення 1066 шт: термін постачання 21-30 дні (днів) |
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| NRVB2045EMFST1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Max. load current: 40A Max. forward voltage: 0.64V Max. forward impulse current: 0.4kA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| NRVB2045EMFST3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape Type of diode: Schottky rectifying Case: DFN5 Mounting: SMD Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Max. load current: 40A Max. forward voltage: 0.64V Max. forward impulse current: 0.4kA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BVSS123LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.225W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V |
на замовлення 1865 шт: термін постачання 21-30 дні (днів) |
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BAS35 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Mounting: SMD Type of diode: switching Case: SOT23 Capacitance: 35pF Max. off-state voltage: 120V Max. forward voltage: 1.25V Load current: 0.2A Semiconductor structure: common anode; double Reverse recovery time: 50ns Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
на замовлення 973 шт: термін постачання 21-30 дні (днів) |
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MC14504BDR2G | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16 Type of integrated circuit: digital Number of channels: 6 Technology: CMOS Kind of integrated circuit: level shifter Mounting: SMD Case: SO16 |
на замовлення 1865 шт: термін постачання 21-30 дні (днів) |
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MC14025BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: triple; 3 Delay time: 130ns Kind of package: reel; tape Kind of gate: NOR Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 3 Supply voltage: 3...18V DC |
на замовлення 2480 шт: термін постачання 21-30 дні (днів) |
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MC74VHCT125ADTRG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14 Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Quiescent current: 40µA Kind of package: reel; tape Manufacturer series: VHCT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KST10MTF | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Power dissipation: 0.35W Case: SOT23 Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 650MHz Kind of transistor: RF |
на замовлення 1750 шт: термін постачання 21-30 дні (днів) |
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MMBT5089LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB Frequency: 50MHz Collector-emitter voltage: 25V Current gain: 400...1200 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.225/0.3W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SOT23; TO236AB |
на замовлення 499 шт: термін постачання 21-30 дні (днів) |
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| MC74VHC244DTG | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: tube Family: VHC Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74VHC244DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: VHC Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MC74VHC244DWR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC Type of integrated circuit: digital Kind of integrated circuit: 3-state; bus buffer; octal Number of channels: 8 Mounting: SMD Case: SO20WB Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state Kind of package: reel; tape Family: VHC Manufacturer series: VHC Technology: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Manufacturer series: BZX84C Leakage current: 3µA |
на замовлення 7159 шт: термін постачання 21-30 дні (днів) |
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SZBZX84C4V7LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Manufacturer series: BZX84C Application: automotive industry |
на замовлення 5424 шт: термін постачання 21-30 дні (днів) |
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ADP3120AJRZ-RL | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Case: SO8 Number of channels: 2 Supply voltage: 4.6...13.2V DC Integrated circuit features: integrated bootstrap functionality Mounting: SMD Operating temperature: -20...150°C Impulse rise time: 20ns Pulse fall time: 11ns Kind of package: reel; tape Protection: overheating OTP; undervoltage UVP Voltage class: 35V |
на замовлення 1613 шт: термін постачання 21-30 дні (днів) |
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KSC2073TU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1.5A Power dissipation: 25W Case: TO220AB Current gain: 40...140 Mounting: THT Kind of package: tube Frequency: 4MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NSS12100XV6T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563 Case: SOT563 Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 12V Current gain: 100 Collector current: 1A Type of transistor: PNP Application: automotive industry Power dissipation: 0.65W Polarisation: bipolar |
на замовлення 83 шт: термін постачання 21-30 дні (днів) |
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BAS19LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 120V Load current: 0.2A Semiconductor structure: single diode Case: SOT23 Kind of package: reel; tape Max. forward voltage: 1V Capacitance: 5pF |
на замовлення 6079 шт: термін постачання 21-30 дні (днів) |
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BSR16 | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB Mounting: SMD Case: SOT23; TO236AB Kind of package: reel; tape Frequency: 300MHz Collector-emitter voltage: 60V Collector current: 0.8A Type of transistor: PNP Power dissipation: 0.35W Polarisation: bipolar |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
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MC14081BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: quad; 4 Delay time: 130ns Kind of package: tube Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: SO14 Number of inputs: 2 Supply voltage: 3...18V DC |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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MC14081BDTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C Operating temperature: -55...125°C Type of integrated circuit: digital Number of channels: quad; 4 Delay time: 130ns Kind of package: reel; tape Kind of gate: AND Technology: CMOS Family: HEF4000B Mounting: SMD Case: TSSOP14 Number of inputs: 2 Supply voltage: 3...18V DC |
на замовлення 1906 шт: термін постачання 21-30 дні (днів) |
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FAN5622SX | ONSEMI |
Category: LED drivers Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: TSOT23-6 Number of channels: 2 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -40...85°C Interface: SWD Maximum output current: 30mA Integrated circuit features: linear dimming; PWM |
на замовлення 2823 шт: термін постачання 21-30 дні (днів) |
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| FDMS8018 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 110A Pulsed drain current: 680A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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MC74LCX574DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; TSSOP20; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 8 Technology: CMOS Manufacturer series: LCX Mounting: SMD Case: TSSOP20 Supply voltage: 2...3.6V DC Operating temperature: -55...125°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state; non-inverting |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HCPL4503M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Case: DIP8 Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Transfer rate: 1Mbps CTR@If: 19-50%@16mA Slew rate: 10kV/μs Manufacturer series: HCPL4503M Mounting: THT |
на замовлення 172 шт: термін постачання 21-30 дні (днів) |
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MC14557BDWG | ONSEMI |
Category: Shift registers Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; 3÷18VDC; tube Type of integrated circuit: digital Kind of integrated circuit: shift register Supply voltage: 3...18V DC Case: SO16WB Mounting: SMD Operating temperature: -55...125°C Kind of package: tube Number of inputs: 12 Technology: CMOS Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. |
| FQD11P06TM |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.95A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.95A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 624 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 69.81 грн |
| 10+ | 56.21 грн |
| 23+ | 40.50 грн |
| 61+ | 38.28 грн |
| ESD5Z2.5T1G |
|
Виробник: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 120W
Max. forward impulse current: 11A
Leakage current: 6µA
Version: ESD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 11A; unidirectional; SOD523; reel,tape; ESD
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 4V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 120W
Max. forward impulse current: 11A
Leakage current: 6µA
Version: ESD
на замовлення 3880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 7.24 грн |
| 87+ | 4.42 грн |
| 131+ | 2.91 грн |
| 500+ | 2.22 грн |
| 618+ | 1.44 грн |
| 1698+ | 1.37 грн |
| MC14504BDG | |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
на замовлення 187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 85.42 грн |
| 10+ | 47.74 грн |
| 24+ | 37.75 грн |
| 48+ | 34.32 грн |
| MC74HC1G32DTT1G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Delay time: 20ns
Category: Gates, inverters
Description: IC: digital; OR; Ch: 1; IN: 2; CMOS; SMD; TSOP5; 2÷6VDC; -55÷125°C; 20ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSOP5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HC
Delay time: 20ns
товару немає в наявності
В кошику
од. на суму грн.
| 1SMB5929BT3G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1SMB59xxBT3G
на замовлення 2001 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 27.92 грн |
| 21+ | 18.61 грн |
| 25+ | 15.71 грн |
| 50+ | 10.91 грн |
| 100+ | 9.46 грн |
| 127+ | 7.08 грн |
| 348+ | 6.70 грн |
| 1000+ | 6.48 грн |
| NL27WZ16DTT1G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Case: TSOP6
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; TSOP6; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Case: TSOP6
Operating temperature: -55...125°C
Number of channels: 2
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...5.5V DC
на замовлення 1504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.46 грн |
| 20+ | 19.83 грн |
| 25+ | 16.17 грн |
| 84+ | 10.60 грн |
| 100+ | 10.45 грн |
| 231+ | 10.07 грн |
| 250+ | 9.76 грн |
| MMBTA55LT1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
на замовлення 1625 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 7.28 грн |
| 97+ | 3.97 грн |
| 106+ | 3.63 грн |
| 120+ | 3.18 грн |
| 477+ | 1.87 грн |
| 1311+ | 1.77 грн |
| MC33164P-5G | |
|
Виробник: ONSEMI
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 1÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open collector
Active logical level: low
Supply voltage: 1...10V DC
Case: TO92
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 32µA
Maximum output current: 50mA
Threshold on-voltage: 4.33V
Kind of package: bulk
на замовлення 1294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.24 грн |
| 12+ | 32.64 грн |
| 33+ | 27.84 грн |
| 90+ | 26.31 грн |
| 100+ | 25.70 грн |
| 500+ | 25.24 грн |
| CAV93C56VE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; Microwire; 256x8/128x16bit; 2MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: Microwire
Memory organisation: 256x8/128x16bit
Operating voltage: 2.5...5.5V
Clock frequency: 2MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 250ns
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| MMBTA63LT1G |
|
Виробник: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 30V; 0.5A; 0.225W
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
на замовлення 2600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.03 грн |
| 74+ | 5.19 грн |
| 104+ | 3.69 грн |
| 449+ | 1.99 грн |
| 1235+ | 1.88 грн |
| FDMS86252L |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12A; 50W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 12A
Power dissipation: 50W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2705 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.77 грн |
| 10+ | 94.57 грн |
| 11+ | 81.60 грн |
| 30+ | 77.79 грн |
| 250+ | 77.03 грн |
| 500+ | 76.26 грн |
| 1000+ | 74.74 грн |
| MC14082BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 4
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 4
Supply voltage: 3...18V DC
на замовлення 443 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.71 грн |
| 16+ | 24.33 грн |
| 25+ | 20.36 грн |
| 75+ | 11.97 грн |
| 205+ | 11.29 грн |
| MC14082BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 4
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: dual; 2
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 4
Supply voltage: 3...18V DC
на замовлення 2355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.60 грн |
| 18+ | 21.35 грн |
| 50+ | 18.76 грн |
| 62+ | 14.41 грн |
| 171+ | 13.65 грн |
| MC74LCXU04DG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCXU
Integrated circuit features: tolerates a voltage of 5V on the inputs
Category: Gates, inverters
Description: IC: digital; hex,inverter; NOT; Ch: 6; IN: 1; CMOS; SMD; SOIC14; tube
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter
Kind of gate: NOT
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SOIC14
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCXU
Integrated circuit features: tolerates a voltage of 5V on the inputs
на замовлення 263 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.45 грн |
| 10+ | 41.34 грн |
| 25+ | 32.34 грн |
| 33+ | 27.07 грн |
| 55+ | 26.54 грн |
| 91+ | 25.62 грн |
| 110+ | 25.01 грн |
| 1N914 |
|
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.4A; bulk; Ifsm: 4A; DO35; Ufmax: 1V
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.4A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 4A
Kind of package: bulk
Leakage current: 50µA
Capacitance: 4pF
на замовлення 6091 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 59+ | 7.02 грн |
| 143+ | 2.67 грн |
| 198+ | 1.93 грн |
| 250+ | 1.65 грн |
| 500+ | 1.46 грн |
| 1000+ | 1.26 грн |
| 1197+ | 0.75 грн |
| 3292+ | 0.70 грн |
| NTR4171PT1G |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.4nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Case: SOT23
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET
на замовлення 315 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 38.60 грн |
| 16+ | 25.32 грн |
| 25+ | 21.89 грн |
| 50+ | 19.45 грн |
| 73+ | 12.58 грн |
| 200+ | 11.90 грн |
| CAT25512HU5I-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 40ns
Clock frequency: 20MHz
Operating temperature: -40...85°C
Kind of interface: serial
Operating voltage: 1.8...5.5V
Memory: 512kb EEPROM
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| NV24C64DTVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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| NV24C64DWVLT3G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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| NV24C64MUW3VLTBG |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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| NV24C64UVLT2G |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 1.7÷5.5V; 1MHz; US8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 1MHz
Mounting: SMD
Case: US8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 400ns
Kind of package: reel; tape
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од. на суму грн.
| CAV24C64WE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| CAV24C64YE-GT3 |
|
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; I2C; 8kx8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 64kb EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
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| 74VHC273MTCX |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; VHC; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Supply voltage: 2...5.5V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
на замовлення 1730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 59.13 грн |
| 10+ | 47.82 грн |
| 33+ | 27.46 грн |
| 90+ | 25.93 грн |
| MBRS2H100T3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 100V
Max. load current: 130A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 100V
Max. load current: 130A
Max. forward voltage: 0.65V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.14 грн |
| 15+ | 25.47 грн |
| 50+ | 21.51 грн |
| 52+ | 17.31 грн |
| 142+ | 16.40 грн |
| 500+ | 15.94 грн |
| 1000+ | 15.71 грн |
| SBAV70LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 31A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: common cathode; double
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 31A
Leakage current: 0.1mA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 9.86 грн |
| 74+ | 5.19 грн |
| 102+ | 3.75 грн |
| 118+ | 3.26 грн |
| 278+ | 3.22 грн |
| 762+ | 3.04 грн |
| MOC3053M |
|
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 600V; DIP6; Ch: 1; MOC3053M
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Output voltage: 600V
Kind of output: triac; without zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 6mA
Mounting: THT
Number of channels: 1
Manufacturer series: MOC3053M
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| MC14511BDG |
|
Виробник: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
Category: Decoders, multiplexers, switches
Description: IC: digital; BCD to 7-segment,decoder,driver,latch; SMD; SO16
Type of integrated circuit: digital
Kind of integrated circuit: BCD to 7-segment; decoder; driver; latch
Mounting: SMD
Case: SO16
Supply voltage: 3...18V DC
Operating temperature: -40...85°C
на замовлення 384 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 32.03 грн |
| 21+ | 18.61 грн |
| 25+ | 17.39 грн |
| 48+ | 16.70 грн |
| 59+ | 15.25 грн |
| 161+ | 14.41 грн |
| RFD14N05SM9A |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7964 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 42.71 грн |
| 11+ | 36.76 грн |
| 25+ | 35.08 грн |
| 28+ | 32.64 грн |
| 76+ | 30.81 грн |
| 500+ | 29.67 грн |
| NCP1081DEG |
|
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
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| NCP1083DEG |
|
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
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| 74LCX16501MTDX |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; 18bit,bus transceiver; Ch: 18; CMOS; SMD; TSSOP56; LCX
Type of integrated circuit: digital
Kind of integrated circuit: 18bit; bus transceiver
Number of channels: 18
Technology: CMOS
Mounting: SMD
Case: TSSOP56
Supply voltage: 1.5...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Integrated circuit features: 5V tolerant on inputs/outputs
Manufacturer series: LCX
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| SBC847BLT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
на замовлення 1553 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 15.60 грн |
| 44+ | 8.85 грн |
| 100+ | 6.09 грн |
| 237+ | 3.79 грн |
| 650+ | 3.58 грн |
| FDN360P |
|
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±20V
On-state resistance: 136mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
на замовлення 1066 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 36.96 грн |
| 16+ | 24.56 грн |
| 50+ | 17.85 грн |
| 99+ | 9.23 грн |
| 270+ | 8.77 грн |
| NRVB2045EMFST1G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 0.64V
Max. forward impulse current: 0.4kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 0.64V
Max. forward impulse current: 0.4kA
Application: automotive industry
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| NRVB2045EMFST3G |
|
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 0.64V
Max. forward impulse current: 0.4kA
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 45V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. load current: 40A
Max. forward voltage: 0.64V
Max. forward impulse current: 0.4kA
Application: automotive industry
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од. на суму грн.
| BVSS123LT1G |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.17A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
на замовлення 1865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.12 грн |
| 26+ | 15.18 грн |
| 32+ | 11.97 грн |
| 100+ | 8.92 грн |
| 155+ | 5.80 грн |
| 425+ | 5.49 грн |
| 1000+ | 5.41 грн |
| BAS35 |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Case: SOT23
Capacitance: 35pF
Max. off-state voltage: 120V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Mounting: SMD
Type of diode: switching
Case: SOT23
Capacitance: 35pF
Max. off-state voltage: 120V
Max. forward voltage: 1.25V
Load current: 0.2A
Semiconductor structure: common anode; double
Reverse recovery time: 50ns
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
на замовлення 973 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 22.18 грн |
| 26+ | 15.18 грн |
| 38+ | 10.28 грн |
| 100+ | 9.05 грн |
| 120+ | 7.47 грн |
| 329+ | 7.06 грн |
| MC14504BDR2G | |
|
Виробник: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; SO16
Type of integrated circuit: digital
Number of channels: 6
Technology: CMOS
Kind of integrated circuit: level shifter
Mounting: SMD
Case: SO16
на замовлення 1865 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.02 грн |
| 10+ | 51.33 грн |
| 25+ | 43.62 грн |
| 26+ | 35.46 грн |
| 70+ | 33.56 грн |
| 250+ | 32.34 грн |
| MC14025BDR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: triple; 3
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: NOR
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 3
Supply voltage: 3...18V DC
на замовлення 2480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.78 грн |
| 13+ | 31.27 грн |
| 25+ | 26.23 грн |
| 56+ | 16.17 грн |
| 152+ | 15.25 грн |
| MC74VHCT125ADTRG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; CMOS,TTL; SMD; TSSOP14
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Quiescent current: 40µA
Kind of package: reel; tape
Manufacturer series: VHCT
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| KST10MTF |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 25V; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: SOT23
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 650MHz
Kind of transistor: RF
на замовлення 1750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.43 грн |
| 54+ | 7.17 грн |
| 100+ | 4.67 грн |
| 371+ | 2.41 грн |
| 1019+ | 2.28 грн |
| MMBT5089LT1G |
|
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Frequency: 50MHz
Collector-emitter voltage: 25V
Current gain: 400...1200
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.05A; 0.225/0.3W; SOT23,TO236AB
Frequency: 50MHz
Collector-emitter voltage: 25V
Current gain: 400...1200
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.225/0.3W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SOT23; TO236AB
на замовлення 499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.39 грн |
| 84+ | 4.58 грн |
| 115+ | 3.33 грн |
| 130+ | 2.94 грн |
| 431+ | 2.06 грн |
| MC74VHC244DTG |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: VHC
Manufacturer series: VHC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: tube
Family: VHC
Manufacturer series: VHC
Technology: CMOS
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од. на суму грн.
| MC74VHC244DTR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Technology: CMOS
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В кошику
од. на суму грн.
| MC74VHC244DWR2G |
|
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bus buffer,octal; Ch: 8; CMOS; SMD; SO20WB; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bus buffer; octal
Number of channels: 8
Mounting: SMD
Case: SO20WB
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Kind of package: reel; tape
Family: VHC
Manufacturer series: VHC
Technology: CMOS
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В кошику
од. на суму грн.
| BZX84C4V7LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
на замовлення 7159 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 57+ | 7.28 грн |
| 90+ | 4.27 грн |
| 112+ | 3.43 грн |
| 184+ | 2.07 грн |
| 222+ | 1.72 грн |
| 500+ | 1.23 грн |
| 1003+ | 0.89 грн |
| 2755+ | 0.84 грн |
| SZBZX84C4V7LT1G |
|
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
на замовлення 5424 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 9.86 грн |
| 66+ | 5.80 грн |
| 89+ | 4.33 грн |
| 574+ | 1.56 грн |
| 1578+ | 1.47 грн |
| 3000+ | 1.42 грн |
| ADP3120AJRZ-RL |
|
Виробник: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,MOSFET gate driver; SO8; Ch: 2; 35V
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Case: SO8
Number of channels: 2
Supply voltage: 4.6...13.2V DC
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Operating temperature: -20...150°C
Impulse rise time: 20ns
Pulse fall time: 11ns
Kind of package: reel; tape
Protection: overheating OTP; undervoltage UVP
Voltage class: 35V
на замовлення 1613 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 75.56 грн |
| 10+ | 38.44 грн |
| 25+ | 34.01 грн |
| 33+ | 27.46 грн |
| 90+ | 25.93 грн |
| KSC2073TU |
|
Виробник: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 150V; 1.5A; 25W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1.5A
Power dissipation: 25W
Case: TO220AB
Current gain: 40...140
Mounting: THT
Kind of package: tube
Frequency: 4MHz
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од. на суму грн.
| NSS12100XV6T1G |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 100
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.65W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1A; 0.65W; SOT563
Case: SOT563
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 12V
Current gain: 100
Collector current: 1A
Type of transistor: PNP
Application: automotive industry
Power dissipation: 0.65W
Polarisation: bipolar
на замовлення 83 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.24 грн |
| 17+ | 23.18 грн |
| 78+ | 11.52 грн |
| BAS19LT1G |
|
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 5pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 120V; 0.2A; SOT23; Ufmax: 1V; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 120V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1V
Capacitance: 5pF
на замовлення 6079 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.39 грн |
| 77+ | 4.96 грн |
| 127+ | 3.02 грн |
| 500+ | 2.20 грн |
| 687+ | 1.30 грн |
| 1890+ | 1.23 грн |
| BSR16 |
|
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 60V
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.35W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.35W; SOT23,TO236AB
Mounting: SMD
Case: SOT23; TO236AB
Kind of package: reel; tape
Frequency: 300MHz
Collector-emitter voltage: 60V
Collector current: 0.8A
Type of transistor: PNP
Power dissipation: 0.35W
Polarisation: bipolar
на замовлення 207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.67 грн |
| 20+ | 19.98 грн |
| 50+ | 13.35 грн |
| 100+ | 11.29 грн |
| 125+ | 7.17 грн |
| MC14081BDG |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 130ns
Kind of package: tube
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: SO14
Number of inputs: 2
Supply voltage: 3...18V DC
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 46.81 грн |
| 14+ | 28.83 грн |
| 25+ | 25.62 грн |
| 41+ | 21.81 грн |
| 110+ | 20.90 грн |
| 113+ | 20.59 грн |
| 275+ | 19.83 грн |
| MC14081BDTR2G |
|
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: TSSOP14
Number of inputs: 2
Supply voltage: 3...18V DC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 3÷18VDC; -55÷125°C
Operating temperature: -55...125°C
Type of integrated circuit: digital
Number of channels: quad; 4
Delay time: 130ns
Kind of package: reel; tape
Kind of gate: AND
Technology: CMOS
Family: HEF4000B
Mounting: SMD
Case: TSSOP14
Number of inputs: 2
Supply voltage: 3...18V DC
на замовлення 1906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 74.74 грн |
| 10+ | 42.10 грн |
| 25+ | 34.47 грн |
| 46+ | 19.37 грн |
| 127+ | 18.30 грн |
| FAN5622SX |
|
Виробник: ONSEMI
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Interface: SWD
Maximum output current: 30mA
Integrated circuit features: linear dimming; PWM
Category: LED drivers
Description: IC: driver; LED driver; SWD; TSOT23-6; Ch: 2; 2.7÷5.5VDC; 30mA
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: TSOT23-6
Number of channels: 2
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -40...85°C
Interface: SWD
Maximum output current: 30mA
Integrated circuit features: linear dimming; PWM
на замовлення 2823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.34 грн |
| 10+ | 51.33 грн |
| 25+ | 42.71 грн |
| 36+ | 25.01 грн |
| 98+ | 23.64 грн |
| 1000+ | 23.03 грн |
| FDMS8018 |
|
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 110A; Idm: 680A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 110A
Pulsed drain current: 680A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MC74LCX574DTR2G |
|
Виробник: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 8; CMOS; LCX; SMD; TSSOP20; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 8
Technology: CMOS
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...3.6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state; non-inverting
товару немає в наявності
В кошику
од. на суму грн.
| HCPL4503M |
|
Виробник: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 1Mbps
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
Mounting: THT
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Case: DIP8
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Transfer rate: 1Mbps
CTR@If: 19-50%@16mA
Slew rate: 10kV/μs
Manufacturer series: HCPL4503M
Mounting: THT
на замовлення 172 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.80 грн |
| 10+ | 91.52 грн |
| 11+ | 86.94 грн |
| 29+ | 82.37 грн |
| 50+ | 80.08 грн |
| 100+ | 79.31 грн |
| MC14557BDWG |
|
Виробник: ONSEMI
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; 3÷18VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 12
Technology: CMOS
Number of channels: 1
Category: Shift registers
Description: IC: digital; shift register; Ch: 1; CMOS; SMD; SO16WB; 3÷18VDC; tube
Type of integrated circuit: digital
Kind of integrated circuit: shift register
Supply voltage: 3...18V DC
Case: SO16WB
Mounting: SMD
Operating temperature: -55...125°C
Kind of package: tube
Number of inputs: 12
Technology: CMOS
Number of channels: 1
товару немає в наявності
В кошику
од. на суму грн.