Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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FDC6333C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V Kind of package: reel; tape Power dissipation: 0.96W Polarisation: unipolar Gate charge: 6.6/5.7nC Technology: PowerTrench® Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±16/±25V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 30/-30V Drain current: 2.5/-2A On-state resistance: 150/220mΩ Type of transistor: N/P-MOSFET |
на замовлення 175 шт: термін постачання 21-30 дні (днів) |
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FDC638P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 14nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 72mΩ Type of transistor: P-MOSFET |
на замовлення 1334 шт: термін постачання 21-30 дні (днів) |
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FDC637AN | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 16nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 20V Drain current: 6.2A On-state resistance: 41mΩ Type of transistor: N-MOSFET |
на замовлення 2268 шт: термін постачання 21-30 дні (днів) |
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FDC638APZ | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 12nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±12V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -4.5A On-state resistance: 72mΩ Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6323L | ONSEMI |
![]() Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 1.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...8V DC Output current: 1.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC637BNZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 12nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 20V Drain current: 6.2A On-state resistance: 41mΩ Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6303N | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 2.3nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 25V Drain current: 0.68A On-state resistance: 0.8Ω Type of transistor: N-MOSFET x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC634P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Kind of package: reel; tape Power dissipation: 1.6W Polarisation: unipolar Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: -20V Drain current: -3.5A On-state resistance: 0.13Ω Type of transistor: P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FDC6329L | ONSEMI |
![]() Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 1.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 2.5...8V DC On-state resistance: 0.105Ω Output current: 2.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FDC6326L | ONSEMI |
![]() Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6 Kind of package: reel; tape Type of integrated circuit: power switch Number of channels: 1 Kind of output: P-Channel Control voltage: 2.5...8V DC Kind of integrated circuit: high-side Mounting: SMD Case: SuperSOT-6 Supply voltage: 3...20V DC On-state resistance: 0.125Ω Output current: 1.8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FDC6320C | ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A On-state resistance: 9/10Ω Type of transistor: N/P-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MC74VHC1GT14DFT1G | ONSEMI |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 84000 шт: термін постачання 21-30 дні (днів) |
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M74VHC1GT14DFT1G | ONSEMI |
![]() Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C Type of integrated circuit: digital Operating temperature: -55...125°C Case: SC88A Number of inputs: 1 Supply voltage: 2...5.5V DC Mounting: SMD Number of channels: single; 1 Kind of package: reel; tape Kind of input: with Schmitt trigger Kind of gate: NOT Technology: TTL Family: VHC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
FFSP2065B | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 22.5A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065A | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 25A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220-2 Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
FFSP2065BDN-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRB20H100CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 0.73V Max. load current: 10A Max. forward impulse current: 250A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SBRB20200CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 200V Load current: 10A x2 Semiconductor structure: common cathode; double Kind of package: reel; tape Max. forward voltage: 1V Max. load current: 20A Max. forward impulse current: 150A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP51199PDR2G | ONSEMI |
![]() Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.75...2.5V Output current: 2A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: max. 125°C Application: for DDR memories Operating voltage: 1.5...5.5/4.75...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN30T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 3V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN27T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.7V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.7...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN25T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.11V Output voltage: 2.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN15T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.245V Output voltage: 1.5V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN18T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.16V Output voltage: 1.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.8...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
NCP511SN28T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP511 Kind of package: reel; tape Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.8...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
MBRD620CTT4G | ONSEMI |
![]() Description: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 20V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Max. load current: 6A Kind of package: reel; tape Max. forward impulse current: 75A |
товару немає в наявності |
В кошику од. на суму грн. |
FDC6333C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±16/±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Kind of package: reel; tape
Power dissipation: 0.96W
Polarisation: unipolar
Gate charge: 6.6/5.7nC
Technology: PowerTrench®
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±16/±25V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
On-state resistance: 150/220mΩ
Type of transistor: N/P-MOSFET
на замовлення 175 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 52.32 грн |
12+ | 33.64 грн |
50+ | 26.39 грн |
59+ | 14.88 грн |
163+ | 14.13 грн |
FDC638P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 14nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 14nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
на замовлення 1334 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.37 грн |
17+ | 22.28 грн |
50+ | 19.81 грн |
52+ | 17.19 грн |
141+ | 16.30 грн |
500+ | 16.22 грн |
1000+ | 15.62 грн |
FDC637AN |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 16nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 16nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
на замовлення 2268 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 68.42 грн |
10+ | 41.11 грн |
33+ | 27.43 грн |
89+ | 25.94 грн |
500+ | 25.19 грн |
FDC638APZ |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±12V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -4.5A
On-state resistance: 72mΩ
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
FDC6323L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Output current: 1.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...8V DC
Output current: 1.5A
товару немає в наявності
В кошику
од. на суму грн.
FDC637BNZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.2A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 12nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 20V
Drain current: 6.2A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
FDC6303N |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25V
Drain current: 0.68A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 0.68A; 0.9W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 2.3nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25V
Drain current: 0.68A
On-state resistance: 0.8Ω
Type of transistor: N-MOSFET x2
товару немає в наявності
В кошику
од. на суму грн.
FDC634P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Kind of package: reel; tape
Power dissipation: 1.6W
Polarisation: unipolar
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: -20V
Drain current: -3.5A
On-state resistance: 0.13Ω
Type of transistor: P-MOSFET
товару немає в наявності
В кошику
од. на суму грн.
FDC6329L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
On-state resistance: 0.105Ω
Output current: 2.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 1.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 2.5...8V DC
On-state resistance: 0.105Ω
Output current: 2.5A
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FDC6326L |
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Виробник: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 1.8A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; P-Channel; SMD; SuperSOT-6
Kind of package: reel; tape
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: P-Channel
Control voltage: 2.5...8V DC
Kind of integrated circuit: high-side
Mounting: SMD
Case: SuperSOT-6
Supply voltage: 3...20V DC
On-state resistance: 0.125Ω
Output current: 1.8A
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FDC6320C |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Type of transistor: N/P-MOSFET
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Kind of transistor: complementary pair
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SuperSOT-6
Drain-source voltage: 25/-25V
Drain current: 0.22/-0.12A
On-state resistance: 9/10Ω
Type of transistor: N/P-MOSFET
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MC74VHC1GT14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
на замовлення 84000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 2.27 грн |
M74VHC1GT14DFT1G |
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Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: TTL
Family: VHC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; TTL; SMD; SC88A; 2÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Operating temperature: -55...125°C
Case: SC88A
Number of inputs: 1
Supply voltage: 2...5.5V DC
Mounting: SMD
Number of channels: single; 1
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Kind of gate: NOT
Technology: TTL
Family: VHC
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FFSP2065B |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 22.5A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 22.5A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
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FFSP2065A |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 25A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 25A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
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FFSP2065B-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Kind of package: tube
Application: automotive industry
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FFSP2065BDN-F085 |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AB; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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MBRB20H100CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 5Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 0.73V
Max. load current: 10A
Max. forward impulse current: 250A
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SBRB20200CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 200V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A x2
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Max. forward voltage: 1V
Max. load current: 20A
Max. forward impulse current: 150A
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NCP51199PDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V DC
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NCP511SN30T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 3V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...6V
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NCP511SN27T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.7V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.7...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.7V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.7...6V
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NCP511SN25T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.11V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.11V
Output voltage: 2.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...6V
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NCP511SN15T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.245V
Output voltage: 1.5V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...6V
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NCP511SN18T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.16V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...6V
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NCP511SN28T1G |
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Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP511
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.8...6V
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MBRD620CTT4G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Max. forward impulse current: 75A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 20V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 20V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Max. load current: 6A
Kind of package: reel; tape
Max. forward impulse current: 75A
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