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ADM1032ARZ-REEL ADM1032ARZ-REEL ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE996BE9D2F8D5B98BF&compId=ADM1032.pdf?ci_sign=15481fe205142f3874f6f88d87aebf1400686b91 Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1%
Mounting: SMD
Case: SO8
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ADM1032ARMZ-REEL ADM1032ARMZ-REEL ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE996BE9D2F8D5B98BF&compId=ADM1032.pdf?ci_sign=15481fe205142f3874f6f88d87aebf1400686b91 Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Case: Micro8
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CAT25256XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NCP785AH120T1G NCP785AH120T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
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FDBL0240N100 ONSEMI fdbl0240n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
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MMSZ4697T1G MMSZ4697T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
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SZMMSZ4697T1G SZMMSZ4697T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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MBR1080G MBR1080G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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NCV3843BVD1R2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
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NCP1365AABCYDR2G ONSEMI ncp1360-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: SO7
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
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BC818-40LT1G BC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTR4003NT1G NTR4003NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
на замовлення 9066 шт:
термін постачання 21-30 дні (днів)
32+13.20 грн
41+9.35 грн
50+7.74 грн
79+4.89 грн
100+4.08 грн
429+2.11 грн
1180+1.99 грн
Мінімальне замовлення: 32
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NTR4003NT3G NTR4003NT3G ONSEMI ntr4003n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDG6317NZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB7AB6021175FA0D6&compId=FDG6317NZ.PDF?ci_sign=a63c618cb09794b2b377cfdfad94a5534db33022 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 153W
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 89nC
Case: DPAK
Kind of channel: enhancement
Gate-source voltage: ±20V
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SBC847CWT1G SBC847CWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847CDXV6T1G ONSEMI bc847cdxv6t1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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KSB1366GTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE346BD9676E0D6&compId=KSB1366.pdf?ci_sign=9786bd7aefb0b39ddb33dc6e5719baf70af36f5e Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 9MHz
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FDT1600N10ALZ FDT1600N10ALZ ONSEMI fdt1600n10alz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2602 шт:
термін постачання 21-30 дні (днів)
8+56.94 грн
10+39.16 грн
25+34.03 грн
34+26.82 грн
93+25.37 грн
250+24.37 грн
Мінімальне замовлення: 8
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NRVTSA4100T3G NRVTSA4100T3G ONSEMI ntsa4100-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 4A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Max. load current: 8A
Max. forward voltage: 0.66V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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FDB0260N1007L ONSEMI fdb0260n1007l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 ONSEMI fdbl0260n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FDMD8260L ONSEMI FAIR-S-A0001013603-1.pdf?t.download=true&u=5oefqw Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 293A; 37W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 293A
Power dissipation: 37W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF ONSEMI fcd620n60zf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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NUP2128WTT1G ONSEMI Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
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SZNUP2124MXWTBG ONSEMI sznup2124-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
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SZNUP2128WTT1G ONSEMI Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
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FDMC86259P ONSEMI fdmc86259p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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HGTD1N120BNS9A ONSEMI hgtd1n120bns-d.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
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FJV992FMTF FJV992FMTF ONSEMI fjv992-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MOC3010M MOC3010M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40 Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
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MOC3010SM ONSEMI FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
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KSB1151YS ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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KSB1151YSTU ONSEMI ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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MMBT2369LT1G MMBT2369LT1G ONSEMI mmbt2369lt1-d.pdf description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB52N20TM FDB52N20TM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
на замовлення 438 шт:
термін постачання 21-30 дні (днів)
3+150.20 грн
5+124.15 грн
9+107.29 грн
24+101.92 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDMS86255ET150 ONSEMI fdms86255et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
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GBU8K GBU8K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
4+113.06 грн
5+94.26 грн
13+72.04 грн
35+68.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU8J GBU8J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+412.64 грн
В кошику  од. на суму  грн.
GBU6K GBU6K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
4+136.17 грн
10+72.80 грн
17+53.64 грн
47+50.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU6G GBU6G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6A GBU6A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6B GBU6B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6D GBU6D ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6J GBU6J ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
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MMSZ5231B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5231BT1G SZMMSZ5231BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)
27+15.68 грн
36+10.88 грн
44+8.89 грн
59+6.53 грн
100+4.20 грн
573+4.08 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
KSP92BU ONSEMI ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9860 шт:
термін постачання 21-30 дні (днів)
36+11.55 грн
51+7.59 грн
100+5.55 грн
213+4.24 грн
585+4.01 грн
2000+3.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
KSP92TA KSP92TA ONSEMI ksp92-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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NCV8440ASTT1G ONSEMI ncv8440-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
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1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
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2N7000 2N7000 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 5401 шт:
термін постачання 21-30 дні (днів)
13+33.84 грн
17+22.61 грн
25+17.78 грн
94+9.58 грн
259+9.04 грн
1000+8.74 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
CAT25020VI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAT25020YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAV25020YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
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ADM1032ARZ-REEL pVersion=0046&contRep=ZT&docId=005056AB82531EE996BE9D2F8D5B98BF&compId=ADM1032.pdf?ci_sign=15481fe205142f3874f6f88d87aebf1400686b91
ADM1032ARZ-REEL
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1%
Mounting: SMD
Case: SO8
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ADM1032ARMZ-REEL pVersion=0046&contRep=ZT&docId=005056AB82531EE996BE9D2F8D5B98BF&compId=ADM1032.pdf?ci_sign=15481fe205142f3874f6f88d87aebf1400686b91
ADM1032ARMZ-REEL
Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Case: Micro8
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CAT25256XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NCP785AH120T1G ncp785a-d.pdf
NCP785AH120T1G
Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
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FDBL0240N100 fdbl0240n100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
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MMSZ4697T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4697T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
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SZMMSZ4697T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
SZMMSZ4697T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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MBR1080G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7
MBR1080G
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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NCV3843BVD1R2G ncv3843bv-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G ncv3843bv-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
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NCP1365AABCYDR2G ncp1360-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: SO7
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
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BC818-40LT1G bc818-40lt1-d.pdf
BC818-40LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTR4003NT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff
NTR4003NT1G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
на замовлення 9066 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.20 грн
41+9.35 грн
50+7.74 грн
79+4.89 грн
100+4.08 грн
429+2.11 грн
1180+1.99 грн
Мінімальне замовлення: 32
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NTR4003NT3G ntr4003n-d.pdf
NTR4003NT3G
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDG6317NZ pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB7AB6021175FA0D6&compId=FDG6317NZ.PDF?ci_sign=a63c618cb09794b2b377cfdfad94a5534db33022
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 153W
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 89nC
Case: DPAK
Kind of channel: enhancement
Gate-source voltage: ±20V
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SBC847CWT1G bc846awt1-d.pdf
SBC847CWT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847CDXV6T1G bc847cdxv6t1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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KSB1366GTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE346BD9676E0D6&compId=KSB1366.pdf?ci_sign=9786bd7aefb0b39ddb33dc6e5719baf70af36f5e
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 9MHz
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FDT1600N10ALZ fdt1600n10alz-d.pdf
FDT1600N10ALZ
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2602 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.94 грн
10+39.16 грн
25+34.03 грн
34+26.82 грн
93+25.37 грн
250+24.37 грн
Мінімальне замовлення: 8
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NRVTSA4100T3G ntsa4100-d.pdf
NRVTSA4100T3G
Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 4A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Max. load current: 8A
Max. forward voltage: 0.66V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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FDB0260N1007L fdb0260n1007l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 fdbl0260n100-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FDMD8260L FAIR-S-A0001013603-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 293A; 37W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 293A
Power dissipation: 37W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCMT199N60 fcmt199n60-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF fcd620n60zf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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NUP2128WTT1G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
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SZNUP2124MXWTBG sznup2124-d.pdf
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
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SZNUP2128WTT1G
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
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FDMC86259P fdmc86259p-d.pdf
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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HGTD1N120BNS9A hgtd1n120bns-d.pdf
Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
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FJV992FMTF fjv992-d.pdf
FJV992FMTF
Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MOC3010M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F9130F580C7&compId=MOC3010M.pdf?ci_sign=0b1d642be81fd7cbf43484641c53c0c34b78cd40
MOC3010M
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
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MOC3010SM FAIR-S-A0002364096-1.pdf?t.download=true&u=5oefqw moc3023m-d.pdf MOC3009_MOC3012Data.pdf
Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
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KSB1151YS pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE33CE660B280D6&compId=KSB1151.pdf?ci_sign=af30fdfbb10fe21d972f1ea0040afdf92eba72e2
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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KSB1151YSTU ksb1151-d.pdf FAIRS21120-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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MMBT2369LT1G description mmbt2369lt1-d.pdf
MMBT2369LT1G
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G mmbt2369lt1-d.pdf
Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB52N20TM pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECDEA43EA443E28&compId=FDB52N20.pdf?ci_sign=d43ba8033692a45b011f90f2143d2d3cb4d93be8
FDB52N20TM
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
на замовлення 438 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+150.20 грн
5+124.15 грн
9+107.29 грн
24+101.92 грн
Мінімальне замовлення: 3
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FDMS86255ET150 fdms86255et150-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
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GBU8K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 521 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.06 грн
5+94.26 грн
13+72.04 грн
35+68.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU8J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DE713AB1AC0D2&compId=GBU8x.PDF?ci_sign=63a491fd3336a9901eac8f0e730e20dcde9b00fa
GBU8J
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+412.64 грн
В кошику  од. на суму  грн.
GBU6K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6K
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+136.17 грн
10+72.80 грн
17+53.64 грн
47+50.58 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
GBU6G pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6G
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6A
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6B pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6B
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6D pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6D
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
товару немає в наявності
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GBU6J pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DB491C28D00D2&compId=GBU6x.PDF?ci_sign=bc92f7d71203c8baf43f946fb7e3d56684613aa5
GBU6J
Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
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MMSZ5231B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5231BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
SZMMSZ5231BT1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+15.68 грн
36+10.88 грн
44+8.89 грн
59+6.53 грн
100+4.20 грн
573+4.08 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
KSP92BU ksp92-d.pdf FAIRS18882-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9860 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.55 грн
51+7.59 грн
100+5.55 грн
213+4.24 грн
585+4.01 грн
2000+3.85 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
KSP92TA ksp92-d.pdf
KSP92TA
Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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NCV8440ASTT1G ncv8440-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
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1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
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2N7000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 5401 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.84 грн
17+22.61 грн
25+17.78 грн
94+9.58 грн
259+9.04 грн
1000+8.74 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
CAT25020VI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C703A0D5&compId=CAT25010-D.pdf?ci_sign=43313a4e9a1143d1146313810913a564e0e78966
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAT25020YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C45C704E0D5&compId=CAT25010-D.pdf?ci_sign=58ae57f94dd6eb24ebbcd72edfd458cad1bd3cab
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAV25020YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4
Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
товару немає в наявності
В кошику  од. на суму  грн.
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