Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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ADM1032ARZ-REEL | ONSEMI |
![]() Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V Supply voltage: 3...5.5V Type of integrated circuit: temperature converter Interface: I2C Kind of temperature sensor: digital thermometer Temperature measuring range: 0...120°C Temperature measurement accuracy: ±1% Mounting: SMD Case: SO8 |
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ADM1032ARMZ-REEL | ONSEMI |
![]() Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V Supply voltage: 3...5.5V Type of integrated circuit: temperature converter Interface: I2C Kind of temperature sensor: digital thermometer Temperature measuring range: 0...120°C Temperature measurement accuracy: ±1°C Mounting: SMD Case: Micro8 |
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В кошику од. на суму грн. | ||||||||||||||
CAT25256XI-T2 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
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CAT25256YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 256kb EEPROM Interface: SPI Memory organisation: 32kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 40ns Kind of package: reel; tape |
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NCP785AH120T1G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 1.2V Output current: 10mA Case: SOT89 Mounting: SMD Manufacturer series: NCP785A Operating temperature: -40...85°C Tolerance: ±5% Number of channels: 1 Input voltage: 25...450V |
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FDBL0240N100 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 210A Pulsed drain current: 910A Power dissipation: 300W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 79nC Kind of channel: enhancement |
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MMSZ4697T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G |
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SZMMSZ4697T1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: MMSZ4xxT1G Application: automotive industry |
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MBR1080G | ONSEMI |
![]() Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.85V Max. load current: 20A Max. forward impulse current: 150A Kind of package: tube Heatsink thickness: 1.14...1.39mm |
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NCV3843BVD1R2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO8 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 702mW Application: automotive industry |
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NCV3843BVDR2G | ONSEMI |
![]() Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96% Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Output current: 1A Frequency: 48...500kHz Number of channels: 1 Case: SO14 Mounting: SMD Operating temperature: -40...105°C Topology: flyback Operating voltage: 7.6...36V Supply voltage: 8.4...36V Duty cycle factor: 0...96% Kind of package: reel; tape Power: 862mW Application: automotive industry |
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NCP1365AABCYDR2G | ONSEMI |
![]() Description: IC: PMIC; SO7; flyback; 6.5÷26VDC Type of integrated circuit: PMIC Output current: -300...500mA Case: SO7 Mounting: SMD Frequency: 75...85kHz Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 6.5...26V DC |
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BC818-40LT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
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NTR4003NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Power dissipation: 0.69W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.15nC |
на замовлення 9066 шт: термін постачання 21-30 дні (днів) |
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NTR4003NT3G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.4A Power dissipation: 0.83W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | ||||||||||||||
FDG6317NZ | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±12V On-state resistance: 0.56Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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FDD8444 | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK Drain-source voltage: 40V Drain current: 50A On-state resistance: 5.2mΩ Type of transistor: N-MOSFET Power dissipation: 153W Polarisation: unipolar Mounting: SMD Kind of package: reel; tape Gate charge: 89nC Case: DPAK Kind of channel: enhancement Gate-source voltage: ±20V |
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В кошику од. на суму грн. | |||||||||||||||
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SBC847CWT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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SBC847CDXV6T1G | ONSEMI |
![]() Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
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KSB1366GTU | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 2W Case: TO220FP Current gain: 150...320 Mounting: THT Kind of package: tube Frequency: 9MHz |
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FDT1600N10ALZ | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223 Case: SOT223 Drain-source voltage: 100V Drain current: 3.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 10.42W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD |
на замовлення 2602 шт: термін постачання 21-30 дні (днів) |
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NRVTSA4100T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 100V; 4A; reel,tape Case: SMA Max. off-state voltage: 100V Max. load current: 8A Max. forward voltage: 0.66V Load current: 4A Semiconductor structure: single diode Max. forward impulse current: 50A Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
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В кошику од. на суму грн. | ||||||||||||||
FDB0260N1007L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 1100A Power dissipation: 250W Case: D2PAK-7 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 84nC Kind of channel: enhancement Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
FDBL0260N100 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 1kA Power dissipation: 250W Case: H-PSOF8L Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 83nC Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
FDMD8260L | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 293A; 37W; PQFN12 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 40A Pulsed drain current: 293A Power dissipation: 37W Case: PQFN12 Gate-source voltage: ±20V On-state resistance: 8.7mΩ Mounting: SMD Gate charge: 68nC Kind of package: reel; tape Kind of channel: enhancement |
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FCMT199N60 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 208W Case: Power88 Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 60.6A Gate charge: 57nC |
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В кошику од. на суму грн. | |||||||||||||||
FCD620N60ZF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.3A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 620mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 21.9A |
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В кошику од. на суму грн. | |||||||||||||||
NUP2128WTT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Case: SC70 Max. off-state voltage: 26.5V Semiconductor structure: bidirectional Breakdown voltage: 27.5...35.5V |
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SZNUP2124MXWTBG | ONSEMI |
![]() Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Case: XDFNW3 Max. off-state voltage: 24V Semiconductor structure: bidirectional Breakdown voltage: 26...33V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
SZNUP2128WTT1G | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Case: SC70 Max. off-state voltage: 26.5V Semiconductor structure: bidirectional Breakdown voltage: 27.5...35.5V Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||
FDMC86259P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -13A Pulsed drain current: -20A Power dissipation: 62W Case: Power33 Gate-source voltage: ±25V On-state resistance: 178mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
HGTD1N120BNS9A | ONSEMI |
![]() Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK Case: DPAK Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 2.7A Pulsed collector current: 6A Type of transistor: IGBT Power dissipation: 60W Kind of package: reel; tape Gate charge: 21nC Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||
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FJV992FMTF | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.3W Case: SOT23; TO236AB Current gain: 300...600 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
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В кошику од. на суму грн. | ||||||||||||||
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MOC3010M | ONSEMI |
![]() Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM Manufacturer series: MOC301XM Case: DIP6 Max. off-state voltage: 3V Output voltage: 250V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 15mA Type of optocoupler: optotriac Mounting: THT |
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MOC3010SM | ONSEMI |
![]() ![]() ![]() Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs Manufacturer series: MOC301XM Case: PDIP6 Max. off-state voltage: 3V Output voltage: 250V Number of channels: 1 Kind of output: triac; without zero voltage crossing driver Insulation voltage: 4.17kV Trigger current: 15mA Slew rate: 1kV/μs Type of optocoupler: optotriac Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||
KSB1151YS | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: bulk |
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В кошику од. на суму грн. | |||||||||||||||
KSB1151YSTU | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 1.3W Case: TO126ISO Pulsed collector current: 8A Current gain: 160...320 Mounting: THT Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||||||
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MMBT2369LT1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225/0.3W Case: SOT23; TO236AB Current gain: 20...120 Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
SMMBT2369ALT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 15V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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FDB52N20TM | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 52A Power dissipation: 357W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 49mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Technology: UniFET™ |
на замовлення 438 шт: термін постачання 21-30 дні (днів) |
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FDMS86255ET150 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 44A Power dissipation: 136W Case: Power56 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 276A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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GBU8K | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 521 шт: термін постачання 21-30 дні (днів) |
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GBU8J | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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GBU6K | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 798 шт: термін постачання 21-30 дні (днів) |
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GBU6G | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||
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GBU6A | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU6B | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||
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GBU6D | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | ||||||||||||||
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GBU6J | ONSEMI |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 6A Max. forward impulse current: 175A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
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FDB0190N807L | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6 Mounting: SMD Gate charge: 249nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.44kA Case: D2PAK-6 Drain-source voltage: 80V Drain current: 190A On-state resistance: 4.3mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape |
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MMSZ5231B | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
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В кошику од. на суму грн. | |||||||||||||||
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SZMMSZ5231BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode Mounting: SMD Case: SOD123 Semiconductor structure: single diode Zener voltage: 5.1V Tolerance: ±5% Application: automotive industry Power dissipation: 0.5W Kind of package: reel; tape Type of diode: Zener Manufacturer series: MMSZ52xxB |
на замовлення 2718 шт: термін постачання 21-30 дні (днів) |
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KSP92BU | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Current gain: 40 Mounting: THT Kind of package: bulk Frequency: 50MHz |
на замовлення 9860 шт: термін постачання 21-30 дні (днів) |
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KSP92TA | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Formed Current gain: 40 Mounting: THT Kind of package: Ammo Pack Frequency: 50MHz |
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NCV8440ASTT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: 52V Power dissipation: 1.69W Polarisation: unipolar Version: ESD Gate charge: 4.5nC Gate-source voltage: ±15V Pulsed drain current: 10A Type of transistor: N-MOSFET On-state resistance: 0.18Ω Drain current: 2.6A |
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1N5282TR | ONSEMI |
![]() ![]() Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35 Case: DO35 Max. off-state voltage: 80V Load current: 0.2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: small signal Mounting: THT |
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В кошику од. на суму грн. | |||||||||||||||
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2N7000 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.5A Power dissipation: 0.4W Case: TO92 Gate-source voltage: ±20V On-state resistance: 9Ω Mounting: THT Kind of channel: enhancement Technology: DMOS Kind of package: bulk |
на замовлення 5401 шт: термін постачання 21-30 дні (днів) |
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CAT25020VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8 Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 256x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 2kb EEPROM Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||||
CAT25020YI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 256x8bit Clock frequency: 20MHz Kind of interface: serial Memory: 2kb EEPROM Operating temperature: -40...85°C |
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В кошику од. на суму грн. | |||||||||||||||
CAV25020YE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz Case: TSSOP8 Mounting: SMD Kind of package: reel; tape Operating voltage: 2.5...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 35ns Clock frequency: 10MHz Kind of interface: serial Memory: 2kb EEPROM Operating temperature: -40...125°C |
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В кошику од. на суму грн. |
ADM1032ARZ-REEL |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1%
Mounting: SMD
Case: SO8
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1%
Mounting: SMD
Case: SO8
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ADM1032ARMZ-REEL |
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Виробник: ONSEMI
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Case: Micro8
Category: Temperature transducers
Description: IC: temperature converter; digital thermometer; 0÷120°C; 3÷5.5V
Supply voltage: 3...5.5V
Type of integrated circuit: temperature converter
Interface: I2C
Kind of temperature sensor: digital thermometer
Temperature measuring range: 0...120°C
Temperature measurement accuracy: ±1°C
Mounting: SMD
Case: Micro8
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CAT25256XI-T2 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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CAT25256YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
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NCP785AH120T1G |
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Виробник: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 1.2V
Output current: 10mA
Case: SOT89
Mounting: SMD
Manufacturer series: NCP785A
Operating temperature: -40...85°C
Tolerance: ±5%
Number of channels: 1
Input voltage: 25...450V
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FDBL0240N100 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
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MMSZ4697T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
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SZMMSZ4697T1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode; 1uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: MMSZ4xxT1G
Application: automotive industry
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MBR1080G |
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Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.85V
Max. load current: 20A
Max. forward impulse current: 150A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
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NCV3843BVD1R2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
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NCP1365AABCYDR2G |
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Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: SO7
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO7; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: SO7
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
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BC818-40LT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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NTR4003NT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
на замовлення 9066 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.20 грн |
41+ | 9.35 грн |
50+ | 7.74 грн |
79+ | 4.89 грн |
100+ | 4.08 грн |
429+ | 2.11 грн |
1180+ | 1.99 грн |
NTR4003NT3G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 0.83W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.83W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FDG6317NZ |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
Gate-source voltage: ±12V
On-state resistance: 0.56Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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FDD8444 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 153W
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 89nC
Case: DPAK
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 153W
Polarisation: unipolar
Mounting: SMD
Kind of package: reel; tape
Gate charge: 89nC
Case: DPAK
Kind of channel: enhancement
Gate-source voltage: ±20V
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SBC847CWT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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SBC847CDXV6T1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
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KSB1366GTU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 9MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 2W
Case: TO220FP
Current gain: 150...320
Mounting: THT
Kind of package: tube
Frequency: 9MHz
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FDT1600N10ALZ |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Case: SOT223
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
на замовлення 2602 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.94 грн |
10+ | 39.16 грн |
25+ | 34.03 грн |
34+ | 26.82 грн |
93+ | 25.37 грн |
250+ | 24.37 грн |
NRVTSA4100T3G |
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Виробник: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 4A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Max. load current: 8A
Max. forward voltage: 0.66V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 4A; reel,tape
Case: SMA
Max. off-state voltage: 100V
Max. load current: 8A
Max. forward voltage: 0.66V
Load current: 4A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
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FDB0260N1007L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FDMD8260L |
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Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 293A; 37W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 293A
Power dissipation: 37W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 40A; Idm: 293A; 37W; PQFN12
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Pulsed drain current: 293A
Power dissipation: 37W
Case: PQFN12
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCMT199N60 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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NUP2128WTT1G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
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SZNUP2124MXWTBG |
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Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
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SZNUP2128WTT1G |
Виробник: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 27.5÷35.5V; bidirectional; SC70; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Case: SC70
Max. off-state voltage: 26.5V
Semiconductor structure: bidirectional
Breakdown voltage: 27.5...35.5V
Application: automotive industry
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FDMC86259P |
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Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -13A
Pulsed drain current: -20A
Power dissipation: 62W
Case: Power33
Gate-source voltage: ±25V
On-state resistance: 178mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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HGTD1N120BNS9A |
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Виробник: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.7A; 60W; DPAK
Case: DPAK
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 2.7A
Pulsed collector current: 6A
Type of transistor: IGBT
Power dissipation: 60W
Kind of package: reel; tape
Gate charge: 21nC
Mounting: SMD
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FJV992FMTF |
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Виробник: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 120V; 0.05A; 0.3W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 300...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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MOC3010M |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; DIP6; Ch: 1; MOC301XM
Manufacturer series: MOC301XM
Case: DIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Type of optocoupler: optotriac
Mounting: THT
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MOC3010SM |
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Виробник: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; PDIP6; Ch: 1; MOC301XM; 1kV/μs
Manufacturer series: MOC301XM
Case: PDIP6
Max. off-state voltage: 3V
Output voltage: 250V
Number of channels: 1
Kind of output: triac; without zero voltage crossing driver
Insulation voltage: 4.17kV
Trigger current: 15mA
Slew rate: 1kV/μs
Type of optocoupler: optotriac
Mounting: SMD
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KSB1151YS |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: bulk
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KSB1151YSTU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 1.3W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.3W
Case: TO126ISO
Pulsed collector current: 8A
Current gain: 160...320
Mounting: THT
Kind of package: tube
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MMBT2369LT1G | ![]() |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225/0.3W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225/0.3W
Case: SOT23; TO236AB
Current gain: 20...120
Mounting: SMD
Kind of package: reel; tape
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SMMBT2369ALT1G |
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Виробник: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDB52N20TM |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 52A; 357W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 52A
Power dissipation: 357W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UniFET™
на замовлення 438 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 150.20 грн |
5+ | 124.15 грн |
9+ | 107.29 грн |
24+ | 101.92 грн |
FDMS86255ET150 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 44A
Power dissipation: 136W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 276A
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GBU8K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 521 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 113.06 грн |
5+ | 94.26 грн |
13+ | 72.04 грн |
35+ | 68.20 грн |
GBU8J |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 1 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 412.64 грн |
GBU6K |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 798 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 136.17 грн |
10+ | 72.80 грн |
17+ | 53.64 грн |
47+ | 50.58 грн |
GBU6G |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6A |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 6A; Ifsm: 175A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6B |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6D |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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GBU6J |
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Виробник: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 175A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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FDB0190N807L |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate charge: 249nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.44kA
Case: D2PAK-6
Drain-source voltage: 80V
Drain current: 190A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
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MMSZ5231B |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5231BT1G |
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Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Mounting: SMD
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 5.1V
Tolerance: ±5%
Application: automotive industry
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ52xxB
на замовлення 2718 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.68 грн |
36+ | 10.88 грн |
44+ | 8.89 грн |
59+ | 6.53 грн |
100+ | 4.20 грн |
573+ | 4.08 грн |
KSP92BU |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Current gain: 40
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
на замовлення 9860 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.55 грн |
51+ | 7.59 грн |
100+ | 5.55 грн |
213+ | 4.24 грн |
585+ | 4.01 грн |
2000+ | 3.85 грн |
KSP92TA |
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Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 0.625W; TO92 Formed
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92 Formed
Current gain: 40
Mounting: THT
Kind of package: Ammo Pack
Frequency: 50MHz
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NCV8440ASTT1G |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 52V; 2.6A; Idm: 10A; 1.69W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 52V
Power dissipation: 1.69W
Polarisation: unipolar
Version: ESD
Gate charge: 4.5nC
Gate-source voltage: ±15V
Pulsed drain current: 10A
Type of transistor: N-MOSFET
On-state resistance: 0.18Ω
Drain current: 2.6A
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1N5282TR |
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Виробник: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
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2N7000 |
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Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 5401 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.84 грн |
17+ | 22.61 грн |
25+ | 17.78 грн |
94+ | 9.58 грн |
259+ | 9.04 грн |
1000+ | 8.74 грн |
CAT25020VI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; SOIC8
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAT25020YI-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Clock frequency: 20MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...85°C
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CAV25020YE-GT3 |
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Виробник: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Case: TSSOP8
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 35ns
Clock frequency: 10MHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating temperature: -40...125°C
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