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NCP114AMX345TCG ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.45V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.45V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCP114ASN080T1G ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCP114ASN260T1G ONSEMI ncp114-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.6V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.6V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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FDS3580 ONSEMI fds3580-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Pulsed drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
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MMSZ4702T1G MMSZ4702T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
на замовлення 2904 шт:
термін постачання 21-30 дні (днів)
54+8.01 грн
85+4.66 грн
106+3.76 грн
126+3.14 грн
149+2.65 грн
250+2.12 грн
624+1.48 грн
1500+1.42 грн
1716+1.40 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
NCP1397ADR2G NCP1397ADR2G ONSEMI ncp1397-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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ES1A ES1A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Case: SMA
на замовлення 5683 шт:
термін постачання 21-30 дні (днів)
19+22.97 грн
29+14.06 грн
50+11.29 грн
100+10.27 грн
109+8.53 грн
298+8.06 грн
500+7.98 грн
1000+7.74 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
2N7000 2N7000 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 4987 шт:
термін постачання 21-30 дні (днів)
13+34.87 грн
17+23.30 грн
25+18.32 грн
94+9.79 грн
259+9.32 грн
1000+9.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NC7WZ17P6X NC7WZ17P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA2E7AD9AC9D9E0D3&compId=NC7WZ17.PDF?ci_sign=91b407382cc9a90bc7ee74f716b77884567fa800 Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
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NTMFS4C09NT1G ONSEMI ntmfs4c09n-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 52A; Idm: 146A; 25.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 146A
Power dissipation: 25.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDS89161 FDS89161 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE714315B04C259&compId=FDS89161.pdf?ci_sign=84ea0d10f63123768be2a5a09d915664e90b6920 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.1nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 176mΩ
Type of transistor: N-MOSFET x2
на замовлення 2255 шт:
термін постачання 21-30 дні (днів)
6+73.45 грн
13+71.87 грн
25+65.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDS89141 FDS89141 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE711DE3F736259&compId=FDS89141.pdf?ci_sign=9360e5de0817338fcf1f52678f4606d59b1c7008 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; 31W; SO8
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.1nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET x2
на замовлення 1964 шт:
термін постачання 21-30 дні (днів)
3+146.12 грн
7+139.80 грн
10+139.01 грн
19+131.90 грн
25+127.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS9958 FDS9958 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE78A026039E259&compId=FDS9958.pdf?ci_sign=74fd92c54cb49f8d090c1756f91488e4c316334a Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET x2
на замовлення 696 шт:
термін постачання 21-30 дні (днів)
5+97.82 грн
10+60.74 грн
26+35.78 грн
71+33.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6679AZ FDS6679AZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC8FC78DC9A259&compId=FDS6679AZ.pdf?ci_sign=ae883a16e760a329d01a04afd566302e1aa3f2f2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
On-state resistance: 14.8mΩ
Type of transistor: P-MOSFET
на замовлення 632 шт:
термін постачання 21-30 дні (днів)
5+96.97 грн
10+58.68 грн
26+36.57 грн
70+34.59 грн
500+33.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6375 FDS6375 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC8817841BE259&compId=FDS6375.pdf?ci_sign=7a42af7fa43b83b0738acb08467d1a41b69e0caa Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
7+64.64 грн
26+36.96 грн
69+34.91 грн
250+33.57 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDS2582 FDS2582 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D2088EB2E259&compId=FDS2582.pdf?ci_sign=f3b3e36a204c7bc74708c4503f4a92a9c7604501 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 150V
Drain current: 2.6A
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
6+79.95 грн
7+64.77 грн
19+49.76 грн
51+47.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDS4470 FDS4470 ONSEMI fds4470-d.pdf description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 12.5A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
3+145.45 грн
5+120.05 грн
11+92.41 грн
28+87.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS8449 FDS8449 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FCE74DD6A259&compId=FDS8449.pdf?ci_sign=955ea26dc0b79871615d6ab85d304c07524c675d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 7.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
5+85.06 грн
7+58.76 грн
23+41.31 грн
62+39.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS2572 FDS2572 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D00A07B9E259&compId=FDS2572.pdf?ci_sign=81c3298df71763cb15ae2af0ecd9293e7f48f665 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 150V
Drain current: 3.1A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
на замовлення 2412 шт:
термін постачання 21-30 дні (днів)
5+102.07 грн
10+87.67 грн
13+73.45 грн
35+69.50 грн
500+67.92 грн
1000+66.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS8447 FDS8447 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FA9B3E156259&compId=FDS8447.pdf?ci_sign=926cdabda2501a8add5774ad1186ab9d8a87c731 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
на замовлення 1604 шт:
термін постачання 21-30 дні (днів)
3+143.75 грн
5+82.14 грн
16+59.92 грн
43+56.65 грн
500+54.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS8880 FDS8880 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFEA05958798C259&compId=FDS8880.pdf?ci_sign=d754b3901a58adde7db0f6aa427e1289cdebfa33 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 11.6A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
на замовлення 322 шт:
термін постачання 21-30 дні (днів)
8+57.84 грн
11+38.15 грн
36+26.06 грн
98+24.64 грн
250+23.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDS2734 FDS2734 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D7DBF1E1C259&compId=FDS2734.pdf?ci_sign=b626c7c2e16b603d07d84582cc611552268394ee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 250V
Drain current: 3A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)
4+113.98 грн
10+97.94 грн
12+82.93 грн
31+78.19 грн
500+75.82 грн
1000+75.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDS3590 FDS3590 ONSEMI fds3590-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 80V
Drain current: 6.5A
On-state resistance: 86mΩ
Type of transistor: N-MOSFET
на замовлення 472 шт:
термін постачання 21-30 дні (днів)
8+60.39 грн
9+44.23 грн
25+39.10 грн
26+36.33 грн
70+34.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDB1D7N10CL7 ONSEMI fdb1d7n10cl7-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 268A; Idm: 1390A; 250W
Drain-source voltage: 100V
Drain current: 268A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1390A
Mounting: SMD
Case: D2PAK-7
товару немає в наявності
В кошику  од. на суму  грн.
NDSH40120CDN NDSH40120CDN ONSEMI ndsh40120cdn-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 52A; TO247-3; tube
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: SiC
Load current: 52A
Semiconductor structure: common cathode; double
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+1454.49 грн
2+912.25 грн
3+862.49 грн
В кошику  од. на суму  грн.
NDP6060L NDP6060L ONSEMI pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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NDP6060 ONSEMI ndp6060-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
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NTMJST2D6N08HTXG ONSEMI ntmjst2d6n08h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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74VHCT08AMTCX 74VHCT08AMTCX ONSEMI FAIRS26049-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
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74VHCT08AMX 74VHCT08AMX ONSEMI FAIRS26049-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
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MC74VHCT08ADR2G MC74VHCT08ADR2G ONSEMI mc74vhc08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
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MC74VHCT08ADTR2G MC74VHCT08ADTR2G ONSEMI mc74vhc08-d.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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NCP1081DEG ONSEMI ncp1081-d.pdf Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
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NCP1063AP060G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1075P065G ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Number of channels: 1
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NCP1076ABP100G ONSEMI ncp1076a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.8Ω
Output current: 0.65A
Number of channels: 1
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NCP1096PAG ONSEMI ncp1096-d.pdf Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP16EP; -40÷125°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP16EP
Mounting: SMD
Operating temperature: -40...125°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt
Supply voltage: 57V DC
Number of ports: 1
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NCP1032AMNTXG ONSEMI ncp1032-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Type of integrated circuit: PMIC
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
On-state resistance: 4.2Ω
Number of channels: 1
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NCP1034DR2G NCP1034DR2G ONSEMI ncp1034-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Operating voltage: 10...18V DC
Frequency: 170...430kHz
Output current: 2A
Number of channels: 1
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NCP1060BD060R2G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO10; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
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NCP1060BD100R2G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO10; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
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NCP1063AD060R2G NCP1063AD060R2G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1063AD100R2G NCP1063AD100R2G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1063AP100G ONSEMI ncp1060-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP10670BD060R2G NCP10670BD060R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.1A
Number of channels: 1
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NCP10670BD100R2G NCP10670BD100R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.1A
Number of channels: 1
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NCP10671BD060R2G NCP10671BD060R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.25A
Number of channels: 1
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NCP10671BD100R2G NCP10671BD100R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.25A
Number of channels: 1
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NCP10672BD060R2G NCP10672BD060R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP10672BD100R2G NCP10672BD100R2G ONSEMI ncp10670-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1072P100BG ONSEMI ncp1070-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.25A
Number of channels: 1
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NTB095N65S3HF ONSEMI ntb095n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB0250N807L ONSEMI fdb0250n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74HC1G04DFT1G MC74HC1G04DFT1G ONSEMI pVersion=0046&contRep=ZT&docId=E2144F26FDECD9F1A303005056AB0C4F&compId=mc74hc1g04.pdf?ci_sign=21246a8b3c494f95e533c245b17583e71664132d Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 7ns
Family: HC
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MC74HC1G04DFT2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C5B7820&compId=MC74HC1G04-D.pdf?ci_sign=dcacb0e359c115398e28e1266eea5dd63593b59f Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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QSD123 QSD123 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA5ACF8F04CD8BF&compId=QSD123.PDF?ci_sign=ec83fd9646a118ab31a4d852f8894c855637688f Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
8+58.69 грн
12+33.57 грн
50+24.96 грн
52+17.85 грн
143+16.82 грн
Мінімальне замовлення: 8
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QSE113 QSE113 ONSEMI pVersion=0046&contRep=ZT&docId=E1FCA4E3280F86F1A303005056AB0C4F&compId=QSE113.pdf?ci_sign=e66144b7aa43619eb683965b000bd994881bba28 Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 5V; 50°
Mounting: THT
Collector-emitter voltage: 5V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
6+77.40 грн
10+45.81 грн
Мінімальне замовлення: 6
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QEE123 QEE123 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED885F80F84475DAA18&compId=QEE122.pdf?ci_sign=f4dca12d9d984926ea1c3f56a5d3360eb835ec00 Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm; THT
Type of diode: IR transmitter
Radiant power: 9mW
Viewing angle: 50°
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
LED lens: transparent
LED version: angular
Wavelength of peak sensitivity: 880nm
Shape: rectangular
LED current: 100mA
Operating voltage: 1.7V DC
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
5+98.67 грн
10+58.84 грн
25+49.84 грн
26+36.81 грн
70+34.83 грн
Мінімальне замовлення: 5
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QSD124 ONSEMI qsd123-d.pdf Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
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QSE113E3R0 ONSEMI FAIR-S-A0001351863-1.pdf?t.download=true&u=5oefqw Category: Phototransistors
Description: Phototransistor; THT; 1.65mm; λp max: 880nm; 30V; 50°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 1.65mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
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NCP114AMX345TCG ncp114-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.45V; 300mA; uDFN4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.45V
Output current: 0.3A
Case: uDFN4
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCP114ASN080T1G ncp114-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 0.8V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 0.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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NCP114ASN260T1G ncp114-d.pdf
Виробник: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.6V; 300mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 2.6V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP114
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
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В кошику  од. на суму  грн.
FDS3580 fds3580-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 7.6A; Idm: 50A; 2.5W; SO8
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhancement
Pulsed drain current: 50A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 7.6A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
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MMSZ4702T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4702T1G
Виробник: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD123; single diode
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Zener voltage: 15V
Leakage current: 50nA
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MMSZ4xxT1G
Mounting: SMD
на замовлення 2904 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
54+8.01 грн
85+4.66 грн
106+3.76 грн
126+3.14 грн
149+2.65 грн
250+2.12 грн
624+1.48 грн
1500+1.42 грн
1716+1.40 грн
Мінімальне замовлення: 54
В кошику  од. на суму  грн.
NCP1397ADR2G ncp1397-d.pdf
NCP1397ADR2G
Виробник: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; -1A÷500mA; 500kHz; Ch: 1; SO16
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Output current: -1...0.5A
Frequency: 0.5MHz
Number of channels: 1
Case: SO16
Mounting: SMD
Topology: push-pull; resonant LLC
Kind of package: reel; tape
Operating voltage: 9...20V DC
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В кошику  од. на суму  грн.
ES1A pVersion=0046&contRep=ZT&docId=005056AB281E1EDD839660D6C48140D2&compId=ES1x.PDF?ci_sign=84cb139c6069a11b400c54d084e8a9287ad91bd9
ES1A
Виробник: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; 15ns; SMA; Ufmax: 0.92V; Ifsm: 30A
Mounting: SMD
Capacitance: 7pF
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Power dissipation: 1.47W
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: fast switching
Max. off-state voltage: 50V
Case: SMA
на замовлення 5683 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.97 грн
29+14.06 грн
50+11.29 грн
100+10.27 грн
109+8.53 грн
298+8.06 грн
500+7.98 грн
1000+7.74 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
2N7000 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD84E58CC03277C0D2&compId=2N7000_2N7002_NDS7002A.PDF?ci_sign=0fd71bfe4fa8b72f11e37dab9fdebe94573526a9
2N7000
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 0.5A; 0.4W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.5A
Power dissipation: 0.4W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: THT
Kind of channel: enhancement
Technology: DMOS
Kind of package: bulk
на замовлення 4987 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+34.87 грн
17+23.30 грн
25+18.32 грн
94+9.79 грн
259+9.32 грн
1000+9.00 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
NC7WZ17P6X pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA2E7AD9AC9D9E0D3&compId=NC7WZ17.PDF?ci_sign=91b407382cc9a90bc7ee74f716b77884567fa800
NC7WZ17P6X
Виробник: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; 1.65÷5.5VDC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Mounting: SMD
Case: SC70-6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
NTMFS4C09NT1G ntmfs4c09n-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 52A; Idm: 146A; 25.5W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 52A
Pulsed drain current: 146A
Power dissipation: 25.5W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 10.9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
FDS89161 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE714315B04C259&compId=FDS89161.pdf?ci_sign=84ea0d10f63123768be2a5a09d915664e90b6920
FDS89161
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.1nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 100V
Drain current: 2.7A
On-state resistance: 176mΩ
Type of transistor: N-MOSFET x2
на замовлення 2255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+73.45 грн
13+71.87 грн
25+65.56 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDS89141 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE711DE3F736259&compId=FDS89141.pdf?ci_sign=9360e5de0817338fcf1f52678f4606d59b1c7008
FDS89141
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; 31W; SO8
Power dissipation: 31W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 7.1nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.107Ω
Type of transistor: N-MOSFET x2
на замовлення 1964 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+146.12 грн
7+139.80 грн
10+139.01 грн
19+131.90 грн
25+127.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS9958 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE78A026039E259&compId=FDS9958.pdf?ci_sign=74fd92c54cb49f8d090c1756f91488e4c316334a
FDS9958
Виробник: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -2.9A; 2W; SO8
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: -60V
Drain current: -2.9A
On-state resistance: 0.19Ω
Type of transistor: P-MOSFET x2
на замовлення 696 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+97.82 грн
10+60.74 грн
26+35.78 грн
71+33.88 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6679AZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC8FC78DC9A259&compId=FDS6679AZ.pdf?ci_sign=ae883a16e760a329d01a04afd566302e1aa3f2f2
FDS6679AZ
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 96nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Case: SO8
Drain-source voltage: -30V
Drain current: -13A
On-state resistance: 14.8mΩ
Type of transistor: P-MOSFET
на замовлення 632 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.97 грн
10+58.68 грн
26+36.57 грн
70+34.59 грн
500+33.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS6375 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFFC8817841BE259&compId=FDS6375.pdf?ci_sign=7a42af7fa43b83b0738acb08467d1a41b69e0caa
FDS6375
Виробник: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 39mΩ
Type of transistor: P-MOSFET
на замовлення 1153 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+64.64 грн
26+36.96 грн
69+34.91 грн
250+33.57 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
FDS2582 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D2088EB2E259&compId=FDS2582.pdf?ci_sign=f3b3e36a204c7bc74708c4503f4a92a9c7604501
FDS2582
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 150V
Drain current: 2.6A
On-state resistance: 146mΩ
Type of transistor: N-MOSFET
на замовлення 382 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.95 грн
7+64.77 грн
19+49.76 грн
51+47.39 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
FDS4470 description fds4470-d.pdf
FDS4470
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.5A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 12.5A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
на замовлення 497 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+145.45 грн
5+120.05 грн
11+92.41 грн
28+87.67 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS8449 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FCE74DD6A259&compId=FDS8449.pdf?ci_sign=955ea26dc0b79871615d6ab85d304c07524c675d
FDS8449
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 7.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 7.6A
On-state resistance: 43mΩ
Type of transistor: N-MOSFET
на замовлення 162 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+85.06 грн
7+58.76 грн
23+41.31 грн
62+39.02 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS2572 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D00A07B9E259&compId=FDS2572.pdf?ci_sign=81c3298df71763cb15ae2af0ecd9293e7f48f665
FDS2572
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 150V
Drain current: 3.1A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
на замовлення 2412 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+102.07 грн
10+87.67 грн
13+73.45 грн
35+69.50 грн
500+67.92 грн
1000+66.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FDS8447 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9FA9B3E156259&compId=FDS8447.pdf?ci_sign=926cdabda2501a8add5774ad1186ab9d8a87c731
FDS8447
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 49nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 12.8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET
на замовлення 1604 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+143.75 грн
5+82.14 грн
16+59.92 грн
43+56.65 грн
500+54.50 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FDS8880 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFEA05958798C259&compId=FDS8880.pdf?ci_sign=d754b3901a58adde7db0f6aa427e1289cdebfa33
FDS8880
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11.6A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 30V
Drain current: 11.6A
On-state resistance: 16.3mΩ
Type of transistor: N-MOSFET
на замовлення 322 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.84 грн
11+38.15 грн
36+26.06 грн
98+24.64 грн
250+23.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDS2734 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE9D7DBF1E1C259&compId=FDS2734.pdf?ci_sign=b626c7c2e16b603d07d84582cc611552268394ee
FDS2734
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 3A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Technology: UltraFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 250V
Drain current: 3A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
на замовлення 2477 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+113.98 грн
10+97.94 грн
12+82.93 грн
31+78.19 грн
500+75.82 грн
1000+75.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FDS3590 fds3590-d.pdf
FDS3590
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.5A; 2.5W; SO8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Drain-source voltage: 80V
Drain current: 6.5A
On-state resistance: 86mΩ
Type of transistor: N-MOSFET
на замовлення 472 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+60.39 грн
9+44.23 грн
25+39.10 грн
26+36.33 грн
70+34.36 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FDB1D7N10CL7 fdb1d7n10cl7-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 268A; Idm: 1390A; 250W
Drain-source voltage: 100V
Drain current: 268A
On-state resistance: 1.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 116nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1390A
Mounting: SMD
Case: D2PAK-7
товару немає в наявності
В кошику  од. на суму  грн.
NDSH40120CDN ndsh40120cdn-d.pdf
NDSH40120CDN
Виробник: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 52A; TO247-3; tube
Mounting: THT
Case: TO247-3
Kind of package: tube
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: SiC
Load current: 52A
Semiconductor structure: common cathode; double
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1454.49 грн
2+912.25 грн
3+862.49 грн
В кошику  од. на суму  грн.
NDP6060L pVersion=0046&contRep=ZT&docId=E20E0A4AA9E34EF1A303005056AB0C4F&compId=NDB6060L.pdf?ci_sign=ad6bbee0ff15f5d3e93e17aa5cc9c1bc50022c74
NDP6060L
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
В кошику  од. на суму  грн.
NDP6060 ndp6060-d.pdf
Виробник: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 48A; Idm: 144A; 100W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 48A
Power dissipation: 100W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 25µΩ
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 144A
товару немає в наявності
В кошику  од. на суму  грн.
NTMJST2D6N08HTXG ntmjst2d6n08h-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 131.5A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 131.5A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
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74VHCT08AMTCX FAIRS26049-1.pdf?t.download=true&u=5oefqw
74VHCT08AMTCX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
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74VHCT08AMX FAIRS26049-1.pdf?t.download=true&u=5oefqw
74VHCT08AMX
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 20µA
Family: VHCT
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MC74VHCT08ADR2G mc74vhc08-d.pdf
MC74VHCT08ADR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: VHCT
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MC74VHCT08ADTR2G mc74vhc08-d.pdf
MC74VHCT08ADTR2G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: VHCT
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NCP1081DEG ncp1081-d.pdf
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP20EP; -40÷85°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP20EP
Mounting: SMD
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at
Supply voltage: 57V DC
Number of ports: 1
Integrated circuit features: integrated DC/DC converter
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NCP1063AP060G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1075P065G ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 59...71kHz
On-state resistance: 16Ω
Output current: 0.45A
Number of channels: 1
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NCP1076ABP100G ncp1076a-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP8; flyback; 6.5÷20VDC
Type of integrated circuit: PMIC
Case: DIP8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.5...20V DC
Frequency: 90...110kHz
On-state resistance: 6.8Ω
Output current: 0.65A
Number of channels: 1
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NCP1096PAG ncp1096-d.pdf
Виробник: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP16EP; -40÷125°C; 57VDC
Type of integrated circuit: PoE PD controller
Case: TSSOP16EP
Mounting: SMD
Operating temperature: -40...125°C
Communictions protocol: Ethernet; IEEE 802.3af; IEEE 802.3at; IEEE 802.3bt
Supply voltage: 57V DC
Number of ports: 1
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NCP1032AMNTXG ncp1032-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; WDFN8; flyback
Type of integrated circuit: PMIC
Case: WDFN8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 7.55...16V DC
Frequency: 275...960kHz
On-state resistance: 4.2Ω
Number of channels: 1
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NCP1034DR2G ncp1034-d.pdf
NCP1034DR2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; buck; 10÷18VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck
Operating voltage: 10...18V DC
Frequency: 170...430kHz
Output current: 2A
Number of channels: 1
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NCP1060BD060R2G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO10; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
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NCP1060BD100R2G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO10; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO10
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.3A
Number of channels: 1
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NCP1063AD060R2G ncp1060-d.pdf
NCP1063AD060R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1063AD100R2G ncp1060-d.pdf
NCP1063AD100R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO16; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO16
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1063AP100G ncp1060-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 7÷20VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP10670BD060R2G ncp10670-d.pdf
NCP10670BD060R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.1A
Number of channels: 1
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NCP10670BD100R2G ncp10670-d.pdf
NCP10670BD100R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.1A
Number of channels: 1
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NCP10671BD060R2G ncp10670-d.pdf
NCP10671BD060R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 41Ω
Output current: 0.25A
Number of channels: 1
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NCP10671BD100R2G ncp10670-d.pdf
NCP10671BD100R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 41Ω
Output current: 0.25A
Number of channels: 1
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NCP10672BD060R2G ncp10670-d.pdf
NCP10672BD060R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 54...66kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP10672BD100R2G ncp10670-d.pdf
NCP10672BD100R2G
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO8; 7÷20VDC
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: buck; buck-boost; flyback
Operating voltage: 7...20V DC
Frequency: 90...110kHz
On-state resistance: 14Ω
Output current: 0.78A
Number of channels: 1
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NCP1072P100BG ncp1070-d.pdf
Виробник: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; flyback; 6.3÷10VDC
Type of integrated circuit: PMIC
Case: DIP7
Mounting: SMD
Operating temperature: -55...125°C
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback
Operating voltage: 6.3...10V DC
Frequency: 90...110kHz
On-state resistance: 16Ω
Output current: 0.25A
Number of channels: 1
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NTB095N65S3HF ntb095n65s3hf-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDB0250N807L fdb0250n807l-d.pdf
Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; Idm: 1110A; 214W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Pulsed drain current: 1110A
Power dissipation: 214W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 143nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74HC1G04DFT1G pVersion=0046&contRep=ZT&docId=E2144F26FDECD9F1A303005056AB0C4F&compId=mc74hc1g04.pdf?ci_sign=21246a8b3c494f95e533c245b17583e71664132d
MC74HC1G04DFT1G
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 7ns
Family: HC
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MC74HC1G04DFT2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B5569C5B7820&compId=MC74HC1G04-D.pdf?ci_sign=dcacb0e359c115398e28e1266eea5dd63593b59f
Виробник: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; CMOS; SMD; SC70-5; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HC
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QSD123 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AA5ACF8F04CD8BF&compId=QSD123.PDF?ci_sign=ec83fd9646a118ab31a4d852f8894c855637688f
QSD123
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
на замовлення 262 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.69 грн
12+33.57 грн
50+24.96 грн
52+17.85 грн
143+16.82 грн
Мінімальне замовлення: 8
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QSE113 pVersion=0046&contRep=ZT&docId=E1FCA4E3280F86F1A303005056AB0C4F&compId=QSE113.pdf?ci_sign=e66144b7aa43619eb683965b000bd994881bba28
QSE113
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 5V; 50°
Mounting: THT
Collector-emitter voltage: 5V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+77.40 грн
10+45.81 грн
Мінімальне замовлення: 6
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QEE123 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885F80F84475DAA18&compId=QEE122.pdf?ci_sign=f4dca12d9d984926ea1c3f56a5d3360eb835ec00
QEE123
Виробник: ONSEMI
Category: IR LEDs
Description: IR transmitter; transparent; 9mW; 50°; 1.7VDC; λp max: 880nm; THT
Type of diode: IR transmitter
Radiant power: 9mW
Viewing angle: 50°
Mounting: THT
Dimensions: 4.44x2.54x5.08mm
LED lens: transparent
LED version: angular
Wavelength of peak sensitivity: 880nm
Shape: rectangular
LED current: 100mA
Operating voltage: 1.7V DC
на замовлення 122 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.67 грн
10+58.84 грн
25+49.84 грн
26+36.81 грн
70+34.83 грн
Мінімальне замовлення: 5
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QSD124 qsd123-d.pdf
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 5mm; λp max: 880nm; 30V; 24°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 5mm
LED lens: black with IR filter
Viewing angle: 24°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
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QSE113E3R0 FAIR-S-A0001351863-1.pdf?t.download=true&u=5oefqw
Виробник: ONSEMI
Category: Phototransistors
Description: Phototransistor; THT; 1.65mm; λp max: 880nm; 30V; 50°
Mounting: THT
Collector-emitter voltage: 30V
LED diameter: 1.65mm
LED lens: black with IR filter
Viewing angle: 50°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 880nm
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