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NP2100SAT3G NP2100SAT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 50A DO-214AA
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NP2100SBT3G NP2100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NP2100SCT3G NP2100SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
NP3500SAT3G NP3500SAT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 320V 50A DO214AA
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 320V
Voltage - Breakover: 400V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 28pF
Packaging: Tape & Reel (TR)
товару немає в наявності
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NRVB1035G NRVB1035G onsemi mbr1035-d.pdf Description: DIODE SCHOTTKY 35V 10A TO2202
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
товару немає в наявності
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NRVBB1060T4G NRVBB1060T4G onsemi nrvbb1060-d.pdf Description: DIODE SCHOTTKY 60V 10A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
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NSB4904DW1T1G NSB4904DW1T1G onsemi nsb4904dw1t1g-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
товару немає в наявності
В кошику  од. на суму  грн.
NSR0130P2T5G NSR0130P2T5G onsemi nsr0130p2-d.pdf Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+2.39 грн
16000+2.08 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR0140P2T5G NSR0140P2T5G onsemi nsr0140p2-d.pdf Description: DIODE SCHOTTKY 30V 70MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 59000 шт:
термін постачання 21-31 дні (днів)
8000+3.60 грн
16000+3.15 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR0230P2T5G NSR0230P2T5G onsemi nsr0230p2-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR1020MW2T1G NSR1020MW2T1G onsemi nsr1020mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.55 грн
6000+2.30 грн
9000+2.22 грн
15000+1.93 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSR1020MW2T3G NSR1020MW2T3G onsemi nsr1020mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.67 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSS12100M3T5G NSS12100M3T5G onsemi nss12100m3-d.pdf Description: TRANS PNP 12V 1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 410mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 625 mW
товару немає в наявності
 Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSS12100XV6T1G NSS12100XV6T1G onsemi nss12100xv6-d.pdf Description: TRANS PNP 12V 1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSS12200LT1G NSS12200LT1G onsemi nss12200l-d.pdf Description: TRANS PNP 12V 2A SOT23-3
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS12500UW3T2G NSS12500UW3T2G onsemi nss12500uw3.pdf Description: TRANS PNP 12V 5A 3WDFN
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
товару немає в наявності
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NSS12600CF8T1G NSS12600CF8T1G onsemi nss12600cf8-d.pdf Description: TRANS PNP 12V 5A CHIPFET
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: ChipFET™
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
NSS20200LT1G NSS20200LT1G onsemi nss20200l-d.pdf Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+7.23 грн
6000+6.33 грн
9000+6.01 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS20500UW3T2G NSS20500UW3T2G onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS40200LT1G NSS40200LT1G onsemi nss40200l-d.pdf Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS40200UW6T1G NSS40200UW6T1G onsemi nss40200uw6-d.pdf Description: TRANS PNP 40V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
товару немає в наявності
В кошику  од. на суму  грн.
NSS40300MZ4T1G NSS40300MZ4T1G onsemi nss40300mz4-d.pdf Description: TRANS PNP 40V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+18.29 грн
2000+16.00 грн
3000+15.18 грн
5000+13.38 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60201LT1G NSS60201LT1G onsemi nss60201l-d.pdf Description: TRANS NPN 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+9.59 грн
6000+8.43 грн
9000+8.02 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS60600MZ4T1G NSS60600MZ4T1G onsemi nss60600mz4-d.pdf Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
1000+16.03 грн
2000+14.16 грн
3000+13.51 грн
5000+11.98 грн
7000+11.57 грн
10000+11.17 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60600MZ4T3G NSS60600MZ4T3G onsemi nss60600mz4-d.pdf Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+13.63 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSS60601MZ4T1G NSS60601MZ4T1G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
1000+18.76 грн
2000+16.45 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60601MZ4T3G NSS60601MZ4T3G onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NST30010MXV6T1G NST30010MXV6T1G onsemi nst30010mxv6-d.pdf Description: TRANS 2PNP 30V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
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NTD25P03LRLG NTD25P03LRLG onsemi ntd25p03l-d.pdf Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
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NTD4804N-1G NTD4804N-1G onsemi ntd4804n-d.pdf Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
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NTD4804N-35G NTD4804N-35G onsemi NTD%2CNVD4804N.pdf Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
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NTD4804NA-1G NTD4804NA-1G onsemi NTD4804NA.pdf Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
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NTD4804NT4G NTD4804NT4G onsemi ntd4804n-d.pdf Description: MOSFET N-CH 30V 14.5A/124A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
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NTD4805N-35G NTD4805N-35G onsemi ntd4805n-d.pdf Description: MOSFET N-CH 30V 12.7A/95A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
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NTD4805NT4G NTD4805NT4G onsemi ntd4805n-d.pdf Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
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NTD4806N-1G NTD4806N-1G onsemi ntd4806n-d.pdf Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
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NTD4806N-35G NTD4806N-35G onsemi ntd4806n-d.pdf Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
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NTD4806NA-1G NTD4806NA-1G onsemi Description: MOSFET N-CH 30V 11.3A/79A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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NTD4806NAT4G NTD4806NAT4G onsemi Description: MOSFET N-CH 30V 11.3A/79A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4808N-1G NTD4808N-1G onsemi ntd4808n-d.pdf Description: MOSFET N-CH 30V 10A/63A IPAK
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
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NTD4808N-35G NTD4808N-35G onsemi ntd4808n-d.pdf Description: MOSFET N-CH 30V 10A/63A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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NTD4808NT4G NTD4808NT4G onsemi ntd4808n-d.pdf Description: MOSFET N-CH 30V 10A/63A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4809N-1G NTD4809N-1G onsemi NTD4809N%2CNVD4809N.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809N-35G NTD4809N-35G onsemi NTD4809N%2CNVD4809N.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NA-1G NTD4809NA-1G onsemi NTD4809NA.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NA-35G NTD4809NA-35G onsemi NTD4809NA.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NAT4G NTD4809NAT4G onsemi NTD4809NA.pdf Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NH-1G NTD4809NH-1G onsemi NTD4809NH%2CNVD4809NH.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4809NH-35G NTD4809NH-35G onsemi NTD4809NH%2CNVD4809NH.pdf Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4809NHT4G NTD4809NHT4G onsemi NTD4809NH%2CNVD4809NH.pdf Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4854N-35G NTD4854N-35G onsemi ntd4854n-d.pdf Description: MOSFET N-CH 25V 15.7A/128A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
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NTD4856N-35G NTD4856N-35G onsemi ntd4856n-d.pdf Description: MOSFET N-CH 25V 13.3A/89A IPAK
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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NTD4858N-1G NTD4858N-1G onsemi ntd4858n-d.pdf Description: MOSFET N-CH 25V 11.2A/73A IPAK
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
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NTD4858N-35G NTD4858N-35G onsemi ntd4858n-d.pdf Description: MOSFET N-CH 25V 11.2A/73A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
4+83.90 грн
75+39.25 грн
150+35.47 грн
525+28.17 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
NTD4858NT4G NTD4858NT4G onsemi ntd4858n-d.pdf Description: MOSFET N-CH 25V 11.2A/73A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4860NT4G NTD4860NT4G onsemi ntd4860n.pdf Description: MOSFET N-CH 25V 10.4A/65A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4863N-1G NTD4863N-1G onsemi ntd4863n-d.pdf Description: MOSFET N-CH 25V 9.2A/49A IPAK
товару немає в наявності
 Мінімальне замовлення: 1425 шт
В кошику  од. на суму  грн.
NTD4863N-35G NTD4863N-35G onsemi ntd4863n-d.pdf Description: MOSFET N-CH 25V 9.2A/49A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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NTD4863NT4G NTD4863NT4G onsemi ntd4863n-d.pdf Description: MOSFET N-CH 25V 9.2A/49A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTGD4161PT1G NTGD4161PT1G onsemi ntgd4161p-d.pdf Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
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NP2100SAT3G NPSERIES-D.pdf
NP2100SAT3G
Виробник: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NP2100SBT3G NPSERIES-D.pdf
NP2100SBT3G
Виробник: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NP2100SCT3G NPSERIES-D.pdf
NP2100SCT3G
Виробник: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
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NP3500SAT3G NPSERIES-D.pdf
NP3500SAT3G
Виробник: onsemi
Description: THYRISTOR 320V 50A DO214AA
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 320V
Voltage - Breakover: 400V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 28pF
Packaging: Tape & Reel (TR)
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NRVB1035G mbr1035-d.pdf
NRVB1035G
Виробник: onsemi
Description: DIODE SCHOTTKY 35V 10A TO2202
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 35 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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NRVBB1060T4G nrvbb1060-d.pdf
NRVBB1060T4G
Виробник: onsemi
Description: DIODE SCHOTTKY 60V 10A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 10A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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NSB4904DW1T1G nsb4904dw1t1g-d.pdf
NSB4904DW1T1G
Виробник: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
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NSR0130P2T5G nsr0130p2-d.pdf
NSR0130P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 525 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8000+2.39 грн
16000+2.08 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR0140P2T5G nsr0140p2-d.pdf
NSR0140P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 70MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 59000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8000+3.60 грн
16000+3.15 грн
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSR0230P2T5G nsr0230p2-d.pdf
NSR0230P2T5G
Виробник: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 10 V
товару немає в наявності
Мінімальне замовлення: 8000 шт
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NSR1020MW2T1G nsr1020mw2t1-d.pdf
NSR1020MW2T1G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+2.55 грн
6000+2.30 грн
9000+2.22 грн
15000+1.93 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSR1020MW2T3G nsr1020mw2t1-d.pdf
NSR1020MW2T3G
Виробник: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Current - Reverse Leakage @ Vr: 40 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10000+2.67 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
NSS12100M3T5G nss12100m3-d.pdf
NSS12100M3T5G
Виробник: onsemi
Description: TRANS PNP 12V 1A SOT-723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 410mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 625 mW
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
NSS12100XV6T1G nss12100xv6-d.pdf
NSS12100XV6T1G
Виробник: onsemi
Description: TRANS PNP 12V 1A SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 440mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Supplier Device Package: SOT-563
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 500 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSS12200LT1G nss12200l-d.pdf
NSS12200LT1G
Виробник: onsemi
Description: TRANS PNP 12V 2A SOT23-3
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS12500UW3T2G nss12500uw3.pdf
NSS12500UW3T2G
Виробник: onsemi
Description: TRANS PNP 12V 5A 3WDFN
Supplier Device Package: 3-WDFN (2x2)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Power - Max: 875 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
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NSS12600CF8T1G nss12600cf8-d.pdf
NSS12600CF8T1G
Виробник: onsemi
Description: TRANS PNP 12V 5A CHIPFET
Power - Max: 830 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: ChipFET™
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 400mA, 4A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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NSS20200LT1G nss20200l-d.pdf
NSS20200LT1G
Виробник: onsemi
Description: TRANS PNP 20V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 460 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+7.23 грн
6000+6.33 грн
9000+6.01 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS20500UW3T2G nss20500uw3-d.pdf
NSS20500UW3T2G
Виробник: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Tape & Reel (TR)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS40200LT1G nss40200l-d.pdf
NSS40200LT1G
Виробник: onsemi
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS40200UW6T1G nss40200uw6-d.pdf
NSS40200UW6T1G
Виробник: onsemi
Description: TRANS PNP 40V 2A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 875 mW
товару немає в наявності
В кошику  од. на суму  грн.
NSS40300MZ4T1G nss40300mz4-d.pdf
NSS40300MZ4T1G
Виробник: onsemi
Description: TRANS PNP 40V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+18.29 грн
2000+16.00 грн
3000+15.18 грн
5000+13.38 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60201LT1G nss60201l-d.pdf
NSS60201LT1G
Виробник: onsemi
Description: TRANS NPN 60V 2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 460 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+9.59 грн
6000+8.43 грн
9000+8.02 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
NSS60600MZ4T1G nss60600mz4-d.pdf
NSS60600MZ4T1G
Виробник: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+16.03 грн
2000+14.16 грн
3000+13.51 грн
5000+11.98 грн
7000+11.57 грн
10000+11.17 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60600MZ4T3G nss60600mz4-d.pdf
NSS60600MZ4T3G
Виробник: onsemi
Description: TRANS PNP 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+13.63 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NSS60601MZ4T1G nss60601mz4-d.pdf
NSS60601MZ4T1G
Виробник: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+18.76 грн
2000+16.45 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
NSS60601MZ4T3G nss60601mz4-d.pdf
NSS60601MZ4T3G
Виробник: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NST30010MXV6T1G nst30010mxv6-d.pdf
NST30010MXV6T1G
Виробник: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
NTD25P03LRLG ntd25p03l-d.pdf
NTD25P03LRLG
Виробник: onsemi
Description: MOSFET P-CH 30V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 25A, 5V
Power Dissipation (Max): 75W (Tj)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
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NTD4804N-1G ntd4804n-d.pdf
NTD4804N-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 75 шт
В кошику  од. на суму  грн.
NTD4804N-35G NTD%2CNVD4804N.pdf
NTD4804N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
товару немає в наявності
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NTD4804NA-1G NTD4804NA.pdf
NTD4804NA-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 14.5A/124A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
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NTD4804NT4G ntd4804n-d.pdf
NTD4804NT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 14.5A/124A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 124A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4490 pF @ 12 V
товару немає в наявності
В кошику  од. на суму  грн.
NTD4805N-35G ntd4805n-d.pdf
NTD4805N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 12.7A/95A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
товару немає в наявності
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NTD4805NT4G ntd4805n-d.pdf
NTD4805NT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 12.7A/95A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 1.41W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 12 V
товару немає в наявності
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NTD4806N-1G ntd4806n-d.pdf
NTD4806N-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
товару немає в наявності
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NTD4806N-35G ntd4806n-d.pdf
NTD4806N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
товару немає в наявності
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NTD4806NA-1G
NTD4806NA-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 11.3A/79A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
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NTD4806NAT4G
NTD4806NAT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 11.3A/79A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 79A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4808N-1G ntd4808n-d.pdf
NTD4808N-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 10A/63A IPAK
на замовлення 1030 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
NTD4808N-35G ntd4808n-d.pdf
NTD4808N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 10A/63A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
товару немає в наявності
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NTD4808NT4G ntd4808n-d.pdf
NTD4808NT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 10A/63A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1538 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta), 54.6W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4809N-1G NTD4809N%2CNVD4809N.pdf
NTD4809N-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809N-35G NTD4809N%2CNVD4809N.pdf
NTD4809N-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.4W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NA-1G NTD4809NA.pdf
NTD4809NA-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NA-35G NTD4809NA.pdf
NTD4809NA-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NAT4G NTD4809NA.pdf
NTD4809NAT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1456 pF @ 12 V
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NTD4809NH-1G NTD4809NH%2CNVD4809NH.pdf
NTD4809NH-1G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4809NH-35G NTD4809NH%2CNVD4809NH.pdf
NTD4809NH-35G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4809NHT4G NTD4809NH%2CNVD4809NH.pdf
NTD4809NHT4G
Виробник: onsemi
Description: MOSFET N-CH 30V 9.6A/58A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2155 pF @ 12 V
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NTD4854N-35G ntd4854n-d.pdf
NTD4854N-35G
Виробник: onsemi
Description: MOSFET N-CH 25V 15.7A/128A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
Power Dissipation (Max): 1.43W (Ta), 93.75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 12 V
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NTD4856N-35G ntd4856n-d.pdf
NTD4856N-35G
Виробник: onsemi
Description: MOSFET N-CH 25V 13.3A/89A IPAK
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.33W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2241 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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NTD4858N-1G ntd4858n-d.pdf
NTD4858N-1G
Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
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NTD4858N-35G ntd4858n-d.pdf
NTD4858N-35G
Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
на замовлення 715 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+83.90 грн
75+39.25 грн
150+35.47 грн
525+28.17 грн
Мінімальне замовлення: 4 шт
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NTD4858NT4G ntd4858n-d.pdf
NTD4858NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4860NT4G ntd4860n.pdf
NTD4860NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 10.4A/65A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTD4863N-1G ntd4863n-d.pdf
NTD4863N-1G
Виробник: onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK
товару немає в наявності
Мінімальне замовлення: 1425 шт
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NTD4863N-35G ntd4863n-d.pdf
NTD4863N-35G
Виробник: onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
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NTD4863NT4G ntd4863n-d.pdf
NTD4863NT4G
Виробник: onsemi
Description: MOSFET N-CH 25V 9.2A/49A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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NTGD4161PT1G ntgd4161p-d.pdf
NTGD4161PT1G
Виробник: onsemi
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
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