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P6SMBJ16A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ16A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ170A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ170CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ18A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ220A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ22A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ24A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ24A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ26CA-AU_R2_000A1 P6SMBJ26CA-AU_R2_000A1 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ28A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ28A-R1 Unidirectional TVS SMD diodes
на замовлення 785 шт:
термін постачання 7-14 дні (днів)
13+26.81 грн
167+7.10 грн
458+6.70 грн
Мінімальне замовлення: 13
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P6SMBJ28CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 1600 шт:
термін постачання 7-14 дні (днів)
16+20.24 грн
107+11.10 грн
295+10.50 грн
9600+10.49 грн
Мінімальне замовлення: 16
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P6SMBJ30A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
15+21.54 грн
23+13.81 грн
100+9.40 грн
500+7.50 грн
800+7.10 грн
1600+6.50 грн
2400+6.40 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P6SMBJ30A_R1_00001 P6SMBJ30A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
25+17.95 грн
38+11.08 грн
100+7.83 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P6SMBJ33A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 850 шт:
термін постачання 7-14 дні (днів)
12+28.00 грн
17+18.48 грн
100+12.50 грн
500+9.60 грн
800+8.80 грн
1600+7.80 грн
2400+7.30 грн
Мінімальне замовлення: 12
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P6SMBJ33A_R1_00001 P6SMBJ33A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
20+23.33 грн
29+14.83 грн
100+10.42 грн
500+8.00 грн
800+7.33 грн
Мінімальне замовлення: 20
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P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
на замовлення 966 шт:
термін постачання 21-30 дні (днів)
16+28.72 грн
25+16.83 грн
100+11.75 грн
500+9.50 грн
800+9.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ33CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 966 шт:
термін постачання 7-14 дні (днів)
10+34.46 грн
15+20.98 грн
100+14.10 грн
500+11.40 грн
800+11.30 грн
Мінімальне замовлення: 10
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P6SMBJ33CA_R2_00001 P6SMBJ33CA_R2_00001 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ36CA-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
10+32.31 грн
17+19.11 грн
100+12.20 грн
500+9.20 грн
800+8.40 грн
1600+7.80 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ36CA_R1_00001 P6SMBJ36CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
17+26.92 грн
28+15.33 грн
100+10.17 грн
Мінімальне замовлення: 17
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P6SMBJ40CA_R2_00001 PanJit Semiconductor P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
на замовлення 5987 шт:
термін постачання 7-14 дні (днів)
11+31.34 грн
141+8.40 грн
389+7.90 грн
Мінімальне замовлення: 11
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P6SMBJ48A_R2_00001 P6SMBJ48A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 865 шт:
термін постачання 7-14 дні (днів)
12+28.00 грн
18+18.28 грн
100+12.10 грн
500+9.30 грн
800+8.60 грн
1600+7.70 грн
2400+7.10 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ5.0A_R1_00001 P6SMBJ5.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
20+23.33 грн
29+14.67 грн
100+10.08 грн
500+7.75 грн
800+7.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 595 шт:
термін постачання 7-14 дні (днів)
9+39.84 грн
14+23.16 грн
100+14.80 грн
500+11.40 грн
800+10.60 грн
1600+9.60 грн
2400+9.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ5.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
14+33.20 грн
23+18.58 грн
100+12.33 грн
500+9.50 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
P6SMBJ58A-AU_R1_000A1 PanJit Semiconductor P6SMBJ-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)
12+26.92 грн
18+17.34 грн
100+11.70 грн
500+9.00 грн
800+8.30 грн
1600+7.40 грн
2400+6.90 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ6.0A_R1_00001 P6SMBJ6.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
20+22.43 грн
30+13.92 грн
100+9.75 грн
500+7.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.0A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
на замовлення 430 шт:
термін постачання 7-14 дні (днів)
10+35.86 грн
135+8.80 грн
369+8.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ8.0A_R2_00001 PanJit Semiconductor Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf PBHV8110DA-AU-R1 NPN SMD transistors
на замовлення 43 шт:
термін постачання 7-14 дні (днів)
13+25.20 грн
212+5.60 грн
582+5.29 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PanJit Semiconductor PCDB1065G1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDH2065CCG1_T0_00601 PanJit Semiconductor PCDH2065CCG1.pdf PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
1+506.12 грн
4+345.98 грн
10+326.98 грн
600+326.06 грн
В кошику  од. на суму  грн.
PCDH3065CCG1_T0_00601 PCDH3065CCG1_T0_00601 PanJit Semiconductor PCDH3065CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
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PCDH3065CCGB_T0_00601 PanJit Semiconductor PCDH3065CCGB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
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PCDH3065CCGC_T0_00601 PanJit Semiconductor PCDH3065CCGC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ5.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ8.2B-AU_R1_000A1 PDZ8.2B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ8.2B_R1_00001 PDZ8.2B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PDZ9.1B-AU_R1_000A1 PDZ9.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
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PDZ9.1B_R1_00001 PDZ9.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf PE1805C4A6-R1 Protection diodes - arrays
на замовлення 8435 шт:
термін постачання 7-14 дні (днів)
18+18.41 грн
195+6.10 грн
534+5.77 грн
3000+5.76 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf PE1805C4C6-R1 Protection diodes - arrays
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)
18+18.09 грн
232+5.11 грн
638+4.83 грн
15000+4.82 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
на замовлення 3900 шт:
термін постачання 7-14 дні (днів)
60+5.38 грн
86+3.63 грн
122+2.46 грн
500+2.10 грн
1000+2.00 грн
5000+1.85 грн
10000+1.82 грн
Мінімальне замовлення: 60
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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
100+4.49 грн
143+2.92 грн
204+2.05 грн
500+1.75 грн
1000+1.67 грн
Мінімальне замовлення: 100
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P6SMBJ16A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ16A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 23.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 23.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ170A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ170CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 189÷209V; 2.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ18A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 20.5A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ200CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 220÷247V; 1.9A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 200V
Breakdown voltage: 220...247V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ220A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 242÷272V; 1.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 220V
Breakdown voltage: 242...272V
Max. forward impulse current: 1.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ22A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷27V; 16.9A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...27V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ24A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ24A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 15.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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P6SMBJ26CA-AU_R2_000A1
P6SMBJ26CA-AU_R2_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ26CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ28A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ28A-R1 Unidirectional TVS SMD diodes
на замовлення 785 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+26.81 грн
167+7.10 грн
458+6.70 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
P6SMBJ28CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ28CA-AU-R1 Bidirectional TVS SMD diodes
на замовлення 1600 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
16+20.24 грн
107+11.10 грн
295+10.50 грн
9600+10.49 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ30A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; unidirectional; SMB; reel,tape; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
15+21.54 грн
23+13.81 грн
100+9.40 грн
500+7.50 грн
800+7.10 грн
1600+6.50 грн
2400+6.40 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
P6SMBJ30A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ30A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.95 грн
38+11.08 грн
100+7.83 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
P6SMBJ33A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Application: automotive industry
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P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 850 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+28.00 грн
17+18.48 грн
100+12.50 грн
500+9.60 грн
800+8.80 грн
1600+7.80 грн
2400+7.30 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ33A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ33A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 850 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.33 грн
29+14.83 грн
100+10.42 грн
500+8.00 грн
800+7.33 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
на замовлення 966 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+28.72 грн
25+16.83 грн
100+11.75 грн
500+9.50 грн
800+9.42 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
P6SMBJ33CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
P6SMBJ33CA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 966 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+34.46 грн
15+20.98 грн
100+14.10 грн
500+11.40 грн
800+11.30 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ33CA_R2_00001
P6SMBJ33CA_R2_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ36CA-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 365 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+32.31 грн
17+19.11 грн
100+12.20 грн
500+9.20 грн
800+8.40 грн
1600+7.80 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ36CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ36CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 365 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.92 грн
28+15.33 грн
100+10.17 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
P6SMBJ40CA_R2_00001
Виробник: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional TVS SMD diodes
на замовлення 5987 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
11+31.34 грн
141+8.40 грн
389+7.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
P6SMBJ48A_R2_00001
P6SMBJ48A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 865 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+28.00 грн
18+18.28 грн
100+12.10 грн
500+9.30 грн
800+8.60 грн
1600+7.70 грн
2400+7.10 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ5.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+23.33 грн
29+14.67 грн
100+10.08 грн
500+7.75 грн
800+7.17 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 595 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
9+39.84 грн
14+23.16 грн
100+14.80 грн
500+11.40 грн
800+10.60 грн
1600+9.60 грн
2400+9.10 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
P6SMBJ5.0CA_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ5.0CA_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 595 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+33.20 грн
23+18.58 грн
100+12.33 грн
500+9.50 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
P6SMBJ58A-AU_R1_000A1 P6SMBJ-AU_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: reel; tape
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P6SMBJ58A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.4A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMBJ
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
на замовлення 520 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
12+26.92 грн
18+17.34 грн
100+11.70 грн
500+9.00 грн
800+8.30 грн
1600+7.40 грн
2400+6.90 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6SMBJ6.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ6.0A_R1_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 520 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.43 грн
30+13.92 грн
100+9.75 грн
500+7.50 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
P6SMBJ6.0CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 7.78÷8.6V; 50A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7V
Breakdown voltage: 7.78...8.6V
Max. forward impulse current: 50A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ7.5CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
P6SMBJ7.5CA-R1 Bidirectional TVS SMD diodes
на замовлення 430 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
10+35.86 грн
135+8.80 грн
369+8.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMBJ8.0A_R2_00001
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
Виробник: PanJit Semiconductor
PBHV8110DA-AU-R1 NPN SMD transistors
на замовлення 43 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
13+25.20 грн
212+5.60 грн
582+5.29 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
PCDB1065G1_R2_00001 PCDB1065G1.pdf
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO263; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO263
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Max. load current: 40A
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Kind of package: reel; tape
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PCDF0465G1_T0_00601 PCDF0465G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
Виробник: PanJit Semiconductor
PCDH2065CCG1-T0 THT Schottky diodes
на замовлення 30 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
1+506.12 грн
4+345.98 грн
10+326.98 грн
600+326.06 грн
В кошику  од. на суму  грн.
PCDH3065CCG1_T0_00601 PCDH3065CCG1.pdf
PCDH3065CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
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PCDH3065CCGB_T0_00601 PCDH3065CCGB.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
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PCDH3065CCGC_T0_00601 PCDH3065CCGC.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PDZ5.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ5.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ5.1B_R1_00001 PDZ4.7B_SER.pdf
PDZ5.1B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ8.2B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ8.2B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ8.2B_R1_00001 PDZ4.7B_SER.pdf
PDZ8.2B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PDZ9.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ9.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Application: automotive industry
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PDZ9.1B_R1_00001 PDZ4.7B_SER.pdf
PDZ9.1B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
Виробник: PanJit Semiconductor
PE1805C4A6-R1 Protection diodes - arrays
на замовлення 8435 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
18+18.41 грн
195+6.10 грн
534+5.77 грн
3000+5.76 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PE1805C4C6.pdf
Виробник: PanJit Semiconductor
PE1805C4C6-R1 Protection diodes - arrays
на замовлення 2970 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
18+18.09 грн
232+5.11 грн
638+4.83 грн
15000+4.82 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
кількість в упаковці: 1 шт
на замовлення 3900 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна
60+5.38 грн
86+3.63 грн
122+2.46 грн
500+2.10 грн
1000+2.00 грн
5000+1.85 грн
10000+1.82 грн
Мінімальне замовлення: 60
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
на замовлення 3900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
100+4.49 грн
143+2.92 грн
204+2.05 грн
500+1.75 грн
1000+1.67 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
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