Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1202) > Сторінка 13 з 21
Фото | Назва | Виробник | Інформація |
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PJA3401A_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 86mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1904 шт: термін постачання 21-30 дні (днів) |
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 17.6A Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 92mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.3nC кількість в упаковці: 1 шт |
на замовлення 9019 шт: термін постачання 14-21 дні (днів) |
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PJA3402_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 17.6A Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 92mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11.3nC |
на замовлення 9019 шт: термін постачання 21-30 дні (днів) |
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PJA3403_R1_00001 | PanJit Semiconductor |
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на замовлення 2378 шт: термін постачання 14-21 дні (днів) |
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PJA3404_R1_00501 | PanJit Semiconductor | PJA3404-R1 SMD N channel transistors |
на замовлення 4849 шт: термін постачання 14-21 дні (днів) |
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PJA3405-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 2864 шт: термін постачання 14-21 дні (днів) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 17.6A кількість в упаковці: 1 шт |
на замовлення 2490 шт: термін постачання 14-21 дні (днів) |
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PJA3406_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 30V Drain current: 4.4A On-state resistance: 70mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 5.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 17.6A |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2945 шт: термін постачання 14-21 дні (днів) |
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PJA3407_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2945 шт: термін постачання 21-30 дні (днів) |
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PJA3409_R1_00001 | PanJit Semiconductor |
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на замовлення 2390 шт: термін постачання 14-21 дні (днів) |
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PJA3411-AU_R1_000A1 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PJA3411_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 16.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2513 шт: термін постачання 21-30 дні (днів) |
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PJA3412-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 16.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2513 шт: термін постачання 14-21 дні (днів) |
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PJA3412_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 16.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 3000 шт: термін постачання 14-21 дні (днів) |
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PJA3412_R1_00501 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 16.4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 95mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PJA3413_R1_00001 | PanJit Semiconductor |
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на замовлення 2370 шт: термін постачання 14-21 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 88mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 2840 шт: термін постачання 21-30 дні (днів) |
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PJA3415A-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.5A Pulsed drain current: -18A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 88mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry кількість в упаковці: 1 шт |
на замовлення 2840 шт: термін постачання 14-21 дні (днів) |
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PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Pulsed drain current: -17.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PJA3415AE_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Pulsed drain current: -17.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 6.5A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 32A кількість в упаковці: 1 шт |
на замовлення 2465 шт: термін постачання 14-21 дні (днів) |
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PJA3416AE_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 20V Drain current: 6.5A On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 32A |
на замовлення 2465 шт: термін постачання 21-30 дні (днів) |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 0.6A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 7390 шт: термін постачання 14-21 дні (днів) |
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PJA3428_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.3A Pulsed drain current: 0.6A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 4Ω Mounting: SMD Gate charge: 0.9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7390 шт: термін постачання 21-30 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Drain current: 2A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V кількість в упаковці: 1 шт |
на замовлення 2565 шт: термін постачання 14-21 дні (днів) |
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PJA3430_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Drain current: 2A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V |
на замовлення 2565 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Drain current: 1.6A On-state resistance: 570mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 6.4A Mounting: SMD Case: SOT23 Drain-source voltage: 30V |
на замовлення 1815 шт: термін постачання 21-30 дні (днів) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Drain current: 1.6A On-state resistance: 570mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.5nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 6.4A Mounting: SMD Case: SOT23 Drain-source voltage: 30V кількість в упаковці: 1 шт |
на замовлення 1815 шт: термін постачання 14-21 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V |
на замовлення 1555 шт: термін постачання 21-30 дні (днів) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V кількість в упаковці: 1 шт |
на замовлення 1555 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V кількість в упаковці: 1 шт |
на замовлення 7011 шт: термін постачання 14-21 дні (днів) |
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PJA3433_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Drain current: -1.1A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -4.4A Mounting: SMD Case: SOT23 Drain-source voltage: -30V |
на замовлення 7011 шт: термін постачання 21-30 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 1.5A Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 3820 шт: термін постачання 14-21 дні (днів) |
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PJA3434_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Case: SOT23 Drain-source voltage: 20V Drain current: 0.75A On-state resistance: 3Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 1.5A Mounting: SMD |
на замовлення 3820 шт: термін постачання 21-30 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Drain current: -500mA On-state resistance: 6Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -20V кількість в упаковці: 1 шт |
на замовлення 5960 шт: термін постачання 14-21 дні (днів) |
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PJA3435_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Drain current: -500mA On-state resistance: 6Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.4nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -20V |
на замовлення 5960 шт: термін постачання 21-30 дні (днів) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Drain current: 1.2A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.9nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 4.8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Drain current: 1.2A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.9nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 4.8A Mounting: SMD Case: SOT23 Drain-source voltage: 20V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Drain current: 0.5A On-state resistance: 6Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.95nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.2A Mounting: SMD Case: SOT23 Drain-source voltage: 50V |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Drain current: 0.5A On-state resistance: 6Ω Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.95nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 1.2A Mounting: SMD Case: SOT23 Drain-source voltage: 50V кількість в упаковці: 1 шт |
на замовлення 500 шт: термін постачання 14-21 дні (днів) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Drain current: -300mA On-state resistance: 13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -60V |
на замовлення 1487 шт: термін постачання 21-30 дні (днів) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Drain current: -300mA On-state resistance: 13Ω Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.1nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -1A Mounting: SMD Case: SOT23 Drain-source voltage: -60V кількість в упаковці: 1 шт |
на замовлення 1487 шт: термін постачання 14-21 дні (днів) |
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PJA3440-AU_R1_000A1 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PJA3441-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 325 шт: термін постачання 14-21 дні (днів) |
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PJA3441_R1_00501 | PanJit Semiconductor | PJA3441-R1 SMD P channel transistors |
на замовлення 2390 шт: термін постачання 14-21 дні (днів) |
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PJA3460-AU_R1_000A1 | PanJit Semiconductor | PJA3460-AU-R1 SMD N channel transistors |
на замовлення 2235 шт: термін постачання 14-21 дні (днів) |
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PJA3460_R1_00001 | PanJit Semiconductor |
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на замовлення 5900 шт: термін постачання 14-21 дні (днів) |
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PJA3461-AU_R1_000A1 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PJA3461_R1_00001 | PanJit Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
PJA3463_R1_00001 | PanJit Semiconductor |
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на замовлення 78 шт: термін постачання 14-21 дні (днів) |
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PJA3471_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W Mounting: SMD Case: SOT23 Drain-source voltage: -100V Drain current: -0.9A On-state resistance: 0.7Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -3.6A кількість в упаковці: 1 шт |
на замовлення 6075 шт: термін постачання 14-21 дні (днів) |
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PJA3471_R1_00501 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W Mounting: SMD Case: SOT23 Drain-source voltage: -100V Drain current: -0.9A On-state resistance: 0.7Ω Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -3.6A |
на замовлення 6075 шт: термін постачання 21-30 дні (днів) |
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PJC138K-AU_R1_000A1 | PanJit Semiconductor |
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на замовлення 2510 шт: термін постачання 14-21 дні (днів) |
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PJC7400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain current: 1.9A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 4.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 7.6A Drain-source voltage: 30V кількість в упаковці: 1 шт |
на замовлення 5940 шт: термін постачання 14-21 дні (днів) |
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PJC7400_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Case: SOT323 Mounting: SMD Kind of package: reel; tape Drain current: 1.9A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Gate charge: 4.8nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 7.6A Drain-source voltage: 30V |
на замовлення 5940 шт: термін постачання 21-30 дні (днів) |
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PJC7401_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.18Ω Type of transistor: P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -6A Mounting: SMD Case: SOT323 кількість в упаковці: 1 шт |
на замовлення 1845 шт: термін постачання 14-21 дні (днів) |
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PJC7401_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323 Drain-source voltage: -30V Drain current: -1.5A On-state resistance: 0.18Ω Type of transistor: P-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 11nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -6A Mounting: SMD Case: SOT323 |
на замовлення 1845 шт: термін постачання 21-30 дні (днів) |
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PJC7404_R1_00001 | PanJit Semiconductor |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323 Case: SOT323 Drain-source voltage: 20V Drain current: 1A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Power dissipation: 0.35W Polarisation: unipolar Kind of package: reel; tape Gate charge: 1.6nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 4A Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 5990 шт: термін постачання 14-21 дні (днів) |
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PJA3401A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1904 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.08 грн |
48+ | 7.85 грн |
100+ | 6.14 грн |
204+ | 4.29 грн |
561+ | 4.05 грн |
PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.3nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.3nC
кількість в упаковці: 1 шт
на замовлення 9019 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 31.88 грн |
14+ | 20.77 грн |
100+ | 9.03 грн |
250+ | 8.29 грн |
254+ | 4.14 грн |
696+ | 3.91 грн |
PJA3402_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11.3nC
на замовлення 9019 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.56 грн |
23+ | 16.67 грн |
100+ | 7.53 грн |
250+ | 6.91 грн |
254+ | 3.45 грн |
696+ | 3.26 грн |
PJA3403_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3403-R1 SMD P channel transistors
PJA3403-R1 SMD P channel transistors
на замовлення 2378 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 34.78 грн |
255+ | 4.12 грн |
702+ | 3.89 грн |
PJA3404_R1_00501 |
Виробник: PanJit Semiconductor
PJA3404-R1 SMD N channel transistors
PJA3404-R1 SMD N channel transistors
на замовлення 4849 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 39.61 грн |
225+ | 4.68 грн |
618+ | 4.42 грн |
PJA3405-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3405-AU-R1 SMD P channel transistors
PJA3405-AU-R1 SMD P channel transistors
на замовлення 2864 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
15+ | 20.29 грн |
195+ | 5.39 грн |
536+ | 5.09 грн |
PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
кількість в упаковці: 1 шт
на замовлення 2490 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.15 грн |
19+ | 15.09 грн |
100+ | 8.63 грн |
220+ | 4.77 грн |
605+ | 4.51 грн |
24000+ | 4.50 грн |
30000+ | 4.45 грн |
PJA3406_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 70mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 5.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 17.6A
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
31+ | 12.11 грн |
100+ | 7.19 грн |
220+ | 3.98 грн |
605+ | 3.76 грн |
PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2945 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.15 грн |
18+ | 15.56 грн |
100+ | 11.03 грн |
188+ | 5.65 грн |
518+ | 5.29 грн |
PJA3407_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2945 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
30+ | 12.48 грн |
100+ | 9.19 грн |
188+ | 4.71 грн |
518+ | 4.41 грн |
PJA3409_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3409-R1 SMD P channel transistors
PJA3409-R1 SMD P channel transistors
на замовлення 2390 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
17+ | 17.39 грн |
202+ | 5.21 грн |
554+ | 4.92 грн |
PJA3411-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3411-AU-R1 SMD P channel transistors
PJA3411-AU-R1 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PJA3411_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3411-R1 SMD P channel transistors
PJA3411-R1 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
65+ | 5.83 грн |
100+ | 5.20 грн |
206+ | 4.35 грн |
566+ | 4.11 грн |
PJA3412-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2513 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 13.52 грн |
39+ | 7.27 грн |
100+ | 6.24 грн |
206+ | 5.22 грн |
566+ | 4.93 грн |
3000+ | 4.75 грн |
PJA3412_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 3000 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 28.98 грн |
13+ | 22.26 грн |
100+ | 8.35 грн |
250+ | 7.81 грн |
313+ | 3.44 грн |
859+ | 3.26 грн |
PJA3412_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 16.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Pulsed drain current: 16.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.15 грн |
21+ | 17.87 грн |
100+ | 6.96 грн |
250+ | 6.51 грн |
313+ | 2.86 грн |
859+ | 2.71 грн |
PJA3413_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3413-R1 SMD P channel transistors
PJA3413-R1 SMD P channel transistors
на замовлення 2370 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 33.81 грн |
320+ | 3.28 грн |
880+ | 3.10 грн |
PJA3415A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 21.74 грн |
26+ | 14.88 грн |
100+ | 7.85 грн |
151+ | 5.98 грн |
413+ | 5.68 грн |
PJA3415A-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
на замовлення 2840 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.08 грн |
16+ | 18.54 грн |
100+ | 9.42 грн |
151+ | 7.18 грн |
413+ | 6.82 грн |
9000+ | 6.55 грн |
PJA3415AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PJA3415AE_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
кількість в упаковці: 1 шт
на замовлення 2465 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 25.12 грн |
16+ | 18.54 грн |
100+ | 12.11 грн |
189+ | 5.65 грн |
520+ | 5.38 грн |
PJA3416AE_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Drain current: 6.5A
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 32A
на замовлення 2465 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.93 грн |
26+ | 14.88 грн |
100+ | 10.09 грн |
189+ | 4.71 грн |
520+ | 4.48 грн |
PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 7390 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
14+ | 22.22 грн |
22+ | 12.95 грн |
100+ | 7.77 грн |
296+ | 3.54 грн |
814+ | 3.35 грн |
75000+ | 3.22 грн |
PJA3428_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7390 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.52 грн |
36+ | 10.39 грн |
100+ | 6.47 грн |
296+ | 2.95 грн |
814+ | 2.80 грн |
PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Drain current: 2A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Drain current: 2A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
кількість в упаковці: 1 шт
на замовлення 2565 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
13+ | 23.18 грн |
19+ | 15.18 грн |
100+ | 6.14 грн |
233+ | 4.55 грн |
640+ | 4.30 грн |
3000+ | 4.13 грн |
PJA3430_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Drain current: 2A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Drain current: 2A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
на замовлення 2565 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.32 грн |
31+ | 12.18 грн |
100+ | 5.11 грн |
233+ | 3.79 грн |
640+ | 3.58 грн |
PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Drain current: 1.6A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Drain current: 1.6A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
на замовлення 1815 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
21+ | 19.32 грн |
29+ | 13.16 грн |
100+ | 5.32 грн |
203+ | 4.37 грн |
556+ | 4.13 грн |
PJA3432-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Drain current: 1.6A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Drain current: 1.6A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.5nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 1815 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
13+ | 23.18 грн |
18+ | 16.39 грн |
100+ | 6.39 грн |
203+ | 5.24 грн |
556+ | 4.95 грн |
3000+ | 4.75 грн |
PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
на замовлення 1555 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.27 грн |
59+ | 6.35 грн |
100+ | 5.61 грн |
184+ | 4.78 грн |
504+ | 4.56 грн |
PJA3433-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
кількість в упаковці: 1 шт
на замовлення 1555 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
22+ | 13.52 грн |
36+ | 7.92 грн |
100+ | 6.73 грн |
184+ | 5.74 грн |
504+ | 5.47 грн |
3000+ | 5.29 грн |
PJA3433_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
кількість в упаковці: 1 шт
на замовлення 7011 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
17+ | 17.39 грн |
25+ | 11.46 грн |
100+ | 7.51 грн |
202+ | 5.27 грн |
500+ | 5.26 грн |
553+ | 4.98 грн |
3000+ | 4.93 грн |
PJA3433_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Drain current: -1.1A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
Mounting: SMD
Case: SOT23
Drain-source voltage: -30V
на замовлення 7011 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.49 грн |
41+ | 9.19 грн |
100+ | 6.26 грн |
202+ | 4.39 грн |
500+ | 4.38 грн |
553+ | 4.15 грн |
3000+ | 4.11 грн |
PJA3434_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 3820 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
16+ | 18.35 грн |
24+ | 12.11 грн |
100+ | 6.86 грн |
256+ | 4.14 грн |
704+ | 3.91 грн |
3000+ | 3.76 грн |
PJA3434_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Case: SOT23
Drain-source voltage: 20V
Drain current: 0.75A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
Mounting: SMD
на замовлення 3820 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.30 грн |
39+ | 9.72 грн |
100+ | 5.72 грн |
256+ | 3.45 грн |
704+ | 3.26 грн |
3000+ | 3.13 грн |
PJA3435_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Drain current: -500mA
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Drain current: -500mA
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
кількість в упаковці: 1 шт
на замовлення 5960 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.15 грн |
19+ | 15.18 грн |
100+ | 13.20 грн |
233+ | 4.54 грн |
641+ | 4.29 грн |
3000+ | 4.13 грн |
PJA3435_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Drain current: -500mA
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Drain current: -500mA
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.4nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -20V
на замовлення 5960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.12 грн |
31+ | 12.18 грн |
100+ | 11.00 грн |
233+ | 3.78 грн |
641+ | 3.57 грн |
3000+ | 3.44 грн |
PJA3436-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
товару немає в наявності
В кошику
од. на суму грн.
PJA3436-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Drain current: 1.2A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.9nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
Mounting: SMD
Case: SOT23
Drain-source voltage: 20V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
PJA3438-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SOT23
Drain-source voltage: 50V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SOT23
Drain-source voltage: 50V
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 21.74 грн |
30+ | 12.63 грн |
100+ | 7.37 грн |
235+ | 3.77 грн |
PJA3438-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SOT23
Drain-source voltage: 50V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Drain current: 0.5A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 0.95nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Mounting: SMD
Case: SOT23
Drain-source voltage: 50V
кількість в упаковці: 1 шт
на замовлення 500 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.08 грн |
18+ | 15.74 грн |
100+ | 8.84 грн |
235+ | 4.52 грн |
644+ | 4.27 грн |
PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Drain current: -300mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Drain current: -300mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
на замовлення 1487 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
22+ | 18.52 грн |
33+ | 11.44 грн |
100+ | 6.47 грн |
219+ | 4.04 грн |
601+ | 3.82 грн |
PJA3439-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Drain current: -300mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Drain current: -300mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT23
Drain-source voltage: -60V
кількість в упаковці: 1 шт
на замовлення 1487 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
14+ | 22.22 грн |
20+ | 14.25 грн |
100+ | 7.76 грн |
219+ | 4.84 грн |
601+ | 4.58 грн |
PJA3440-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJA3440-AU-R1 SMD N channel transistors
PJA3440-AU-R1 SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PJA3441-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3441-AU-R1 SMD P channel transistors
PJA3441-AU-R1 SMD P channel transistors
на замовлення 325 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 34.78 грн |
163+ | 6.46 грн |
447+ | 6.10 грн |
PJA3441_R1_00501 |
Виробник: PanJit Semiconductor
PJA3441-R1 SMD P channel transistors
PJA3441-R1 SMD P channel transistors
на замовлення 2390 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 32.65 грн |
182+ | 5.74 грн |
500+ | 5.47 грн |
PJA3460-AU_R1_000A1 |
Виробник: PanJit Semiconductor
PJA3460-AU-R1 SMD N channel transistors
PJA3460-AU-R1 SMD N channel transistors
на замовлення 2235 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 29.95 грн |
149+ | 7.09 грн |
411+ | 6.64 грн |
PJA3460_R1_00001 |
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Виробник: PanJit Semiconductor
PJA3460-R1 SMD N channel transistors
PJA3460-R1 SMD N channel transistors
на замовлення 5900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 36.22 грн |
152+ | 6.91 грн |
419+ | 6.55 грн |
PJA3461-AU_R1_000A1 |
![]() |
Виробник: PanJit Semiconductor
PJA3461-AU-R1 SMD P channel transistors
PJA3461-AU-R1 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PJA3461_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3461-R1 SMD P channel transistors
PJA3461-R1 SMD P channel transistors
товару немає в наявності
В кошику
од. на суму грн.
PJA3463_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
PJA3463-R1 SMD P channel transistors
PJA3463-R1 SMD P channel transistors
на замовлення 78 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
9+ | 32.84 грн |
133+ | 7.89 грн |
364+ | 7.53 грн |
PJA3471_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Mounting: SMD
Case: SOT23
Drain-source voltage: -100V
Drain current: -0.9A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -3.6A
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Mounting: SMD
Case: SOT23
Drain-source voltage: -100V
Drain current: -0.9A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -3.6A
кількість в упаковці: 1 шт
на замовлення 6075 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
10+ | 28.98 грн |
13+ | 22.82 грн |
100+ | 12.38 грн |
140+ | 7.53 грн |
384+ | 7.09 грн |
9000+ | 7.00 грн |
24000+ | 6.82 грн |
PJA3471_R1_00501 |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Mounting: SMD
Case: SOT23
Drain-source voltage: -100V
Drain current: -0.9A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -3.6A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Mounting: SMD
Case: SOT23
Drain-source voltage: -100V
Drain current: -0.9A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -3.6A
на замовлення 6075 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 24.15 грн |
21+ | 18.31 грн |
100+ | 10.32 грн |
140+ | 6.28 грн |
384+ | 5.91 грн |
PJC138K-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
PJC138K-AU-R1 SMD N channel transistors
PJC138K-AU-R1 SMD N channel transistors
на замовлення 2510 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
12+ | 24.63 грн |
280+ | 3.76 грн |
768+ | 3.56 грн |
PJC7400_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
кількість в упаковці: 1 шт
на замовлення 5940 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 28.01 грн |
14+ | 20.77 грн |
100+ | 14.08 грн |
171+ | 6.10 грн |
470+ | 5.74 грн |
PJC7400_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
на замовлення 5940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.34 грн |
23+ | 16.67 грн |
100+ | 11.74 грн |
171+ | 5.08 грн |
470+ | 4.78 грн |
PJC7401_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
кількість в упаковці: 1 шт
на замовлення 1845 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
8+ | 37.67 грн |
13+ | 22.08 грн |
100+ | 13.63 грн |
166+ | 6.37 грн |
453+ | 6.01 грн |
PJC7401_R1_00001 |
![]() |
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Drain-source voltage: -30V
Drain current: -1.5A
On-state resistance: 0.18Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 11nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -6A
Mounting: SMD
Case: SOT323
на замовлення 1845 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 31.40 грн |
22+ | 17.72 грн |
100+ | 11.36 грн |
166+ | 5.31 грн |
453+ | 5.01 грн |
PJC7404_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 5990 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
11+ | 27.05 грн |
16+ | 17.51 грн |
100+ | 10.23 грн |
179+ | 5.92 грн |
491+ | 5.56 грн |
15000+ | 5.47 грн |
21000+ | 5.38 грн |