Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1830) > Сторінка 13 з 31
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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GS1010FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 3895 шт: термін постачання 14-30 дні (днів) |
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GS1010FL_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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GS1510FL_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1.5A; SOD123F; Ufmax: 1.1V; Ifsm: 50A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SOD123F Max. forward voltage: 1.1V Max. forward impulse current: 50A Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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GS1A_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 50V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Semiconductor structure: single diode Features of semiconductor devices: glass passivated Leakage current: 50µA Load current: 1A Max. forward voltage: 1.1V Mounting: SMD Case: SMA Max. forward impulse current: 35A Max. off-state voltage: 50V Type of diode: rectifying Kind of package: reel; tape |
на замовлення 1180 шт: термін постачання 14-30 дні (днів) |
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GS1G-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
на замовлення 3497 шт: термін постачання 14-30 дні (днів) |
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GS1G-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||||||||
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GS1G_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
на замовлення 2200 шт: термін постачання 14-30 дні (днів) |
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GS1G_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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GS1M-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
на замовлення 4127 шт: термін постачання 14-30 дні (днів) |
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GS1M-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Application: automotive industry Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GS1M_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
на замовлення 603 шт: термін постачання 14-30 дні (днів) |
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GS1M_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.1V Max. forward impulse current: 35A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
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GS1MWG_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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GS1MWG_R2_00001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA-W Max. forward voltage: 1.1V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||||
| IMZ1AS-AU_S1_000A1 | PanJit Semiconductor |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.15A Power dissipation: 0.3W Case: SOT23-6L Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| IMZ1AS_S1_00001 | PanJit Semiconductor |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.15A Power dissipation: 0.3W Case: SOT23-6L Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KBJ1010_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 170A Version: flat Case: KBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KBJ1510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 15A Max. forward impulse current: 180A Version: flat Case: KBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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KBJ2010_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A Electrical mounting: THT Max. forward voltage: 1.05V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Load current: 20A Kind of package: tube Case: KBJ2 Type of bridge rectifier: single-phase Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| KBJ2510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 240A Max. forward impulse current: 0.24kA Max. forward voltage: 1.05V Version: flat Features of semiconductor devices: glass passivated Leads: flat pin Max. off-state voltage: 1kV Electrical mounting: THT Load current: 25A Kind of package: tube Case: KBJ2 Type of bridge rectifier: single-phase |
на замовлення 193 шт: термін постачання 14-30 дні (днів) |
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| KBJ3510_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 350A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 350A Version: flat Case: KBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| KBJ410_T0_00601 | PanJit Semiconductor |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 135A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 135A Version: flat Case: KBJ2 Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.05V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LL4148_R1_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 1840 шт: термін постачання 14-30 дні (днів) |
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LL4148_R2_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 47088 шт: термін постачання 14-30 дні (днів) |
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LL4448_R1_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 500mA; MiniMELF; reel,tape Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.5A Semiconductor structure: single diode Case: MiniMELF Kind of package: reel; tape Features of semiconductor devices: small signal Capacitance: 4pF |
на замовлення 698 шт: термін постачання 14-30 дні (днів) |
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MB210-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 0.1kV Max. forward impulse current: 50A Semiconductor structure: single diode Case: SMB Mounting: SMD Leakage current: 20mA Kind of package: reel; tape Application: automotive industry Load current: 2A Max. forward voltage: 0.8V |
на замовлення 533 шт: термін постачання 14-30 дні (днів) |
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MB310_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape Case: SMC Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 0.1kV Load current: 3A Leakage current: 1mA Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR1020LL_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.67V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 25mA Case: SOD123F Type of diode: Schottky rectifying Max. forward impulse current: 50A |
на замовлення 2569 шт: термін постачання 14-30 дні (днів) |
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MBR1020VL-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.34V Application: automotive industry Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 15mA Case: SOD123F Type of diode: Schottky rectifying Max. forward impulse current: 45A |
на замовлення 2339 шт: термін постачання 14-30 дні (днів) |
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MBR1020VL_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Mounting: SMD Max. forward voltage: 0.34V Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 60mA Case: SOD123F Type of diode: Schottky rectifying Max. forward impulse current: 45A |
на замовлення 1389 шт: термін постачання 14-30 дні (днів) |
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MBR1040VL_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 0.36V Max. forward impulse current: 40A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 0.45mA |
на замовлення 1547 шт: термін постачання 14-30 дні (днів) |
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MBR20200CT_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 20A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.9V Max. forward impulse current: 200A Kind of package: Ammo Pack Leakage current: 20mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR2200_AY_00001 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V Max. forward impulse current: 50A Max. forward voltage: 0.9V Max. off-state voltage: 200V Load current: 2A Kind of package: Ammo Pack Semiconductor structure: single diode Leakage current: 20mA Case: DO15 Type of diode: Schottky rectifying Mounting: THT |
на замовлення 3059 шт: термін постачання 14-30 дні (днів) |
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MBR310AFC-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMAF-C Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 0.3mA Max. forward impulse current: 80A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR315AFC_R1_00001 | PanJit Semiconductor |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMAF-C; SMD; 150V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMAF-C Mounting: SMD Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.9V Leakage current: 50µA Max. forward impulse current: 80A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR5H150SS_AY_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 5A; DO201AD; Ufmax: 0.85V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.85V Max. forward impulse current: 150A Leakage current: 1mA Kind of package: Ammo Pack |
на замовлення 267 шт: термін постачання 14-30 дні (днів) |
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| MBR60100PT_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.8V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR60150PT_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.9V Max. forward impulse current: 0.4kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| MBR60200PT_T0_00001 | PanJit Semiconductor |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 60A Semiconductor structure: common cathode; double Case: TO247AD-3 Max. forward voltage: 0.9V Kind of package: tube Max. forward impulse current: 0.4kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MCL4148_R1_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: MicroMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
на замовлення 53607 шт: термін постачання 14-30 дні (днів) |
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MCL4148_R2_10001 | PanJit Semiconductor |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: MicroMELF Max. forward voltage: 1V Max. forward impulse current: 0.5A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
Мінімальне замовлення: 20000 шт В кошику од. на суму грн. | ||||||||||||||||||
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MER1002CT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns Mounting: THT Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Type of diode: rectifying Kind of package: tube Reverse recovery time: 37ns Leakage current: 60µA Max. forward voltage: 0.95V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER1002FCT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns Mounting: THT Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Type of diode: rectifying Kind of package: tube Reverse recovery time: 37ns Leakage current: 60µA Max. forward voltage: 0.95V Load current: 10A Max. forward impulse current: 100A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER1002FT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; ITO220AC; 47ns Mounting: THT Semiconductor structure: single diode Case: ITO220AC Type of diode: rectifying Kind of package: tube Reverse recovery time: 47ns Leakage current: 90µA Max. forward voltage: 0.95V Load current: 10A Max. forward impulse current: 170A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER1002T_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; TO220AC; Ir: 90uA Mounting: THT Semiconductor structure: single diode Case: TO220AC Type of diode: rectifying Kind of package: tube Reverse recovery time: 47ns Leakage current: 90µA Max. forward voltage: 0.95V Load current: 10A Max. forward impulse current: 170A Max. off-state voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER1602CT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 16A; Ifsm: 120A; ITO220AB; tube; 43ns Case: ITO220AB Mounting: THT Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 16A Semiconductor structure: common cathode; double Leakage current: 75µA Type of diode: rectifying Reverse recovery time: 43ns Max. forward impulse current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER1DMB_R2_00601 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A Case: SMB Mounting: SMD Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 20µA Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 35A Max. forward voltage: 0.95V Features of semiconductor devices: superfast switching Max. off-state voltage: 200V |
на замовлення 2969 шт: термін постачання 14-30 дні (днів) |
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MER2DAL_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123F Max. forward voltage: 0.95V Max. forward impulse current: 60A Leakage current: 40µA Kind of package: reel; tape |
на замовлення 8000 шт: термін постачання 14-30 дні (днів) |
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MER3DAFC_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 50uA Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SMAF-C Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 75A Max. forward voltage: 0.95V |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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MER3DAH_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 20ns; SOD123HE; Ufmax: 0.95V Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SOD123HE Type of diode: rectifying Reverse recovery time: 20ns Max. forward impulse current: 75A Max. forward voltage: 0.95V |
на замовлення 2998 шт: термін постачання 14-30 дні (днів) |
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MER3DBF_R1_00701 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB flat; Ufmax: 0.95V Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SMB flat Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 75A Max. forward voltage: 0.95V |
на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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MER3DMB_R2_00601 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A Mounting: SMD Features of semiconductor devices: superfast switching Max. off-state voltage: 200V Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 50µA Case: SMB Type of diode: rectifying Reverse recovery time: 35ns Max. forward impulse current: 75A Max. forward voltage: 0.95V |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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MER502FT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5A; Ifsm: 100A; ITO220AC; tube; Ir: 60uA Mounting: THT Max. forward impulse current: 100A Max. forward voltage: 0.95V Max. off-state voltage: 200V Load current: 5A Kind of package: tube Semiconductor structure: single diode Leakage current: 60µA Case: ITO220AC Type of diode: rectifying Reverse recovery time: 37ns |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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MER502T_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5A; tube; Ifsm: 100A; TO220AC; Ir: 60uA Mounting: THT Kind of package: tube Max. off-state voltage: 200V Case: TO220AC Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 37ns Leakage current: 60µA Max. forward voltage: 0.95V Load current: 5A Max. forward impulse current: 100A |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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MER802FT_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; ITO220AC; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 120A Case: ITO220AC Max. forward voltage: 0.95V Leakage current: 75µA Reverse recovery time: 43ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MER802T_T0_00601 | PanJit Semiconductor |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 75uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 8A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 120A Case: TO220AC Max. forward voltage: 0.95V Leakage current: 75µA Reverse recovery time: 43ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBD3004BRM_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 350V; 0.225A; 50ns; SOT23-6; Ufmax: 1.25V Mounting: SMD Reverse recovery time: 50ns Max. forward impulse current: 1A Max. forward voltage: 1.25V Features of semiconductor devices: fast switching Max. off-state voltage: 350V Load current: 0.225A Max. load current: 0.625A Kind of package: reel; tape Semiconductor structure: double series x2 Leakage current: 0.1mA Case: SOT23-6 Type of diode: switching |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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MMBD4148TS_R1_00001 | PanJit Semiconductor |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD523; Ufmax: 1.25V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD523 Max. forward voltage: 1.25V Max. forward impulse current: 4A Kind of package: reel; tape Features of semiconductor devices: fast switching Leakage current: 2.5µA |
на замовлення 2915 шт: термін постачання 14-30 дні (днів) |
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MMBT2222A-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MMBT2222A_R1_00501 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23 Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| GS1010FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 3895 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 74+ | 5.76 грн |
| 126+ | 3.38 грн |
| 500+ | 2.95 грн |
| GS1010FL_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SOD123F; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 20000 шт
В кошику
од. на суму грн.
| GS1510FL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SOD123F; Ufmax: 1.1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SOD123F; Ufmax: 1.1V; Ifsm: 50A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SOD123F
Max. forward voltage: 1.1V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.94 грн |
| 61+ | 6.94 грн |
| 100+ | 4.29 грн |
| 500+ | 3.16 грн |
| GS1A_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Mounting: SMD
Case: SMA
Max. forward impulse current: 35A
Max. off-state voltage: 50V
Type of diode: rectifying
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 50V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.1V
Mounting: SMD
Case: SMA
Max. forward impulse current: 35A
Max. off-state voltage: 50V
Type of diode: rectifying
Kind of package: reel; tape
на замовлення 1180 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 93+ | 4.57 грн |
| 131+ | 3.23 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.28 грн |
| GS1G-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
на замовлення 3497 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.47 грн |
| 109+ | 3.89 грн |
| 123+ | 3.45 грн |
| 250+ | 2.90 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.42 грн |
| 1800+ | 2.29 грн |
| GS1G-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| GS1G_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 81+ | 5.25 грн |
| 127+ | 3.35 грн |
| 250+ | 2.80 грн |
| 500+ | 2.43 грн |
| 1000+ | 2.12 грн |
| 1800+ | 1.87 грн |
| GS1G_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| GS1M-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
на замовлення 4127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.38 грн |
| 103+ | 4.15 грн |
| 121+ | 3.50 грн |
| 250+ | 3.15 грн |
| 500+ | 2.92 грн |
| 1000+ | 2.79 грн |
| 1800+ | 2.52 грн |
| 3600+ | 2.49 грн |
| GS1M-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Application: automotive industry
Leakage current: 50µA
товару немає в наявності
В кошику
од. на суму грн.
| GS1M_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
на замовлення 603 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.29 грн |
| 84+ | 5.08 грн |
| 130+ | 3.27 грн |
| 500+ | 2.34 грн |
| GS1M_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.1V; Ifsm: 35A; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.1V
Max. forward impulse current: 35A
Kind of package: reel; tape
Leakage current: 50µA
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Мінімальне замовлення: 7500 шт
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| GS1MWG_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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| GS1MWG_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA-W; Ufmax: 1.1V; Ifsm: 30A; Ir: 1uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA-W
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 1µA
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Мінімальне замовлення: 7500 шт
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| IMZ1AS-AU_S1_000A1 |
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Виробник: PanJit Semiconductor
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
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| IMZ1AS_S1_00001 |
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Виробник: PanJit Semiconductor
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; 60V; 0.15A; 0.3W; SOT23-6L
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.15A
Power dissipation: 0.3W
Case: SOT23-6L
Mounting: SMD
Kind of package: reel; tape
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| KBJ1010_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 170A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 170A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| KBJ1510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 180A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 15A
Max. forward impulse current: 180A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| KBJ2010_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 20A; Ifsm: 200A
Electrical mounting: THT
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Load current: 20A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
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| KBJ2510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 240A
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 240A
Max. forward impulse current: 0.24kA
Max. forward voltage: 1.05V
Version: flat
Features of semiconductor devices: glass passivated
Leads: flat pin
Max. off-state voltage: 1kV
Electrical mounting: THT
Load current: 25A
Kind of package: tube
Case: KBJ2
Type of bridge rectifier: single-phase
на замовлення 193 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 84.78 грн |
| 7+ | 70.26 грн |
| 20+ | 65.18 грн |
| 100+ | 62.64 грн |
| KBJ3510_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 350A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 350A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 350A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| KBJ410_T0_00601 |
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Виробник: PanJit Semiconductor
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 135A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 135A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 135A
Version: flat
Case: KBJ2
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.05V
Features of semiconductor devices: glass passivated
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| LL4148_R1_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 1840 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.47 грн |
| 129+ | 3.30 грн |
| 197+ | 2.15 грн |
| 250+ | 1.85 грн |
| 500+ | 1.64 грн |
| 1000+ | 1.41 грн |
| LL4148_R2_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MiniMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 47088 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 188+ | 2.42 грн |
| 278+ | 1.52 грн |
| 368+ | 1.15 грн |
| 500+ | 1.03 грн |
| 1000+ | 0.96 грн |
| 2500+ | 0.91 грн |
| 10000+ | 0.82 грн |
| 20000+ | 0.80 грн |
| LL4448_R1_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; MiniMELF; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Case: MiniMELF
Kind of package: reel; tape
Features of semiconductor devices: small signal
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 500mA; MiniMELF; reel,tape
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.5A
Semiconductor structure: single diode
Case: MiniMELF
Kind of package: reel; tape
Features of semiconductor devices: small signal
Capacitance: 4pF
на замовлення 698 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.76 грн |
| 75+ | 5.67 грн |
| 106+ | 4.00 грн |
| 148+ | 2.86 грн |
| 250+ | 2.40 грн |
| 500+ | 2.00 грн |
| MB210-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Load current: 2A
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Leakage current: 20mA
Kind of package: reel; tape
Application: automotive industry
Load current: 2A
Max. forward voltage: 0.8V
на замовлення 533 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.44 грн |
| 29+ | 15.07 грн |
| 100+ | 9.48 грн |
| 400+ | 8.21 грн |
| 500+ | 7.45 грн |
| MB310_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.1kV
Load current: 3A
Leakage current: 1mA
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 100V; 3A; reel,tape
Case: SMC
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 0.1kV
Load current: 3A
Leakage current: 1mA
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.8V
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| MBR1020LL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.67V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.67V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 25mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
на замовлення 2569 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 10.03 грн |
| 61+ | 6.94 грн |
| 100+ | 4.71 грн |
| 500+ | 3.60 грн |
| 1000+ | 3.20 грн |
| MBR1020VL-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.34V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 15mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 45A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.34V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 15mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 45A
на замовлення 2339 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.23 грн |
| 41+ | 10.33 грн |
| 100+ | 7.36 грн |
| 250+ | 6.52 грн |
| 500+ | 6.01 грн |
| 1000+ | 5.50 грн |
| MBR1020VL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.34V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 60mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 45A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Mounting: SMD
Max. forward voltage: 0.34V
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 60mA
Case: SOD123F
Type of diode: Schottky rectifying
Max. forward impulse current: 45A
на замовлення 1389 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.70 грн |
| 34+ | 12.70 грн |
| 100+ | 6.78 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.67 грн |
| MBR1040VL_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.36V
Max. forward impulse current: 40A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.45mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 0.36V
Max. forward impulse current: 40A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 0.45mA
на замовлення 1547 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 32+ | 13.37 грн |
| 100+ | 8.46 грн |
| 500+ | 6.37 грн |
| 1000+ | 5.70 грн |
| MBR20200CT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 20A; TO220AB; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 200A
Kind of package: Ammo Pack
Leakage current: 20mA
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| MBR2200_AY_00001 |
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 20mA
Case: DO15
Type of diode: Schottky rectifying
Mounting: THT
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 2A; DO15; Ufmax: 0.9V
Max. forward impulse current: 50A
Max. forward voltage: 0.9V
Max. off-state voltage: 200V
Load current: 2A
Kind of package: Ammo Pack
Semiconductor structure: single diode
Leakage current: 20mA
Case: DO15
Type of diode: Schottky rectifying
Mounting: THT
на замовлення 3059 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 22.79 грн |
| 30+ | 14.39 грн |
| 37+ | 11.51 грн |
| 100+ | 9.73 грн |
| 250+ | 8.63 грн |
| 500+ | 7.79 грн |
| 1000+ | 6.94 грн |
| 3000+ | 6.60 грн |
| MBR310AFC-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 0.3mA
Max. forward impulse current: 80A
Kind of package: reel; tape
Application: automotive industry
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| MBR315AFC_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 50µA
Max. forward impulse current: 80A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMAF-C; SMD; 150V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMAF-C
Mounting: SMD
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Leakage current: 50µA
Max. forward impulse current: 80A
Kind of package: reel; tape
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| MBR5H150SS_AY_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Leakage current: 1mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 5A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 150A
Leakage current: 1mA
Kind of package: Ammo Pack
на замовлення 267 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 49.23 грн |
| 16+ | 28.19 грн |
| 100+ | 20.82 грн |
| MBR60100PT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.8V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 60A; TO247AD-3; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.8V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| MBR60150PT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Max. forward impulse current: 0.4kA
Kind of package: tube
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| MBR60200PT_T0_00001 |
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Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Kind of package: tube
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 60A; TO247AD-3; Ufmax: 0.9V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 60A
Semiconductor structure: common cathode; double
Case: TO247AD-3
Max. forward voltage: 0.9V
Kind of package: tube
Max. forward impulse current: 0.4kA
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| MCL4148_R1_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
на замовлення 53607 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.56 грн |
| 148+ | 2.88 грн |
| 165+ | 2.57 грн |
| 183+ | 2.32 грн |
| 250+ | 2.07 грн |
| 500+ | 1.74 грн |
| 1000+ | 1.56 грн |
| 3000+ | 1.38 грн |
| 12000+ | 1.22 грн |
| MCL4148_R2_10001 |
Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; MicroMELF; Ufmax: 1V; Ir: 5uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: MicroMELF
Max. forward voltage: 1V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Leakage current: 5µA
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Мінімальне замовлення: 20000 шт
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| MER1002CT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
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| MER1002FCT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 100A; ITO220AB; 37ns
Mounting: THT
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 100A
Max. off-state voltage: 200V
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| MER1002FT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; ITO220AC; 47ns
Mounting: THT
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; ITO220AC; 47ns
Mounting: THT
Semiconductor structure: single diode
Case: ITO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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| MER1002T_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; TO220AC; Ir: 90uA
Mounting: THT
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 10A; tube; Ifsm: 170A; TO220AC; Ir: 90uA
Mounting: THT
Semiconductor structure: single diode
Case: TO220AC
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 47ns
Leakage current: 90µA
Max. forward voltage: 0.95V
Load current: 10A
Max. forward impulse current: 170A
Max. off-state voltage: 200V
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од. на суму грн.
| MER1602CT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 120A; ITO220AB; tube; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Leakage current: 75µA
Type of diode: rectifying
Reverse recovery time: 43ns
Max. forward impulse current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 16A; Ifsm: 120A; ITO220AB; tube; 43ns
Case: ITO220AB
Mounting: THT
Kind of package: tube
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 16A
Semiconductor structure: common cathode; double
Leakage current: 75µA
Type of diode: rectifying
Reverse recovery time: 43ns
Max. forward impulse current: 120A
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| MER1DMB_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Case: SMB
Mounting: SMD
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 35A
Case: SMB
Mounting: SMD
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 20µA
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 35A
Max. forward voltage: 0.95V
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
на замовлення 2969 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 28+ | 16.41 грн |
| 40+ | 10.58 грн |
| 50+ | 8.47 грн |
| 100+ | 6.35 грн |
| 250+ | 5.67 грн |
| 500+ | 5.33 грн |
| 1000+ | 5.08 грн |
| MER2DAL_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 35ns; SOD123F; Ufmax: 0.95V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123F
Max. forward voltage: 0.95V
Max. forward impulse current: 60A
Leakage current: 40µA
Kind of package: reel; tape
на замовлення 8000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 9.12 грн |
| 61+ | 6.94 грн |
| 100+ | 6.15 грн |
| 500+ | 5.16 грн |
| 1000+ | 4.65 грн |
| 3000+ | 4.31 грн |
| 6000+ | 3.97 грн |
| MER3DAFC_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 50uA
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMAF-C
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMAF-C; Ufmax: 0.95V; Ir: 50uA
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMAF-C
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 29.17 грн |
| 22+ | 20.15 грн |
| 50+ | 15.15 грн |
| 100+ | 13.37 грн |
| 250+ | 11.34 грн |
| 500+ | 9.99 грн |
| 1000+ | 8.89 грн |
| 3000+ | 7.45 грн |
| MER3DAH_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SOD123HE; Ufmax: 0.95V
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 20ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 20ns; SOD123HE; Ufmax: 0.95V
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SOD123HE
Type of diode: rectifying
Reverse recovery time: 20ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
на замовлення 2998 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.44 грн |
| 26+ | 16.34 грн |
| 100+ | 11.26 грн |
| 500+ | 8.38 грн |
| 1000+ | 7.36 грн |
| MER3DBF_R1_00701 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB flat; Ufmax: 0.95V
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMB flat
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB flat; Ufmax: 0.95V
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMB flat
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
на замовлення 499 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 24+ | 18.03 грн |
| 50+ | 14.31 грн |
| 100+ | 12.78 грн |
| 250+ | 10.75 грн |
| MER3DMB_R2_00601 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMB; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Features of semiconductor devices: superfast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 50µA
Case: SMB
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.00 грн |
| 23+ | 18.96 грн |
| 100+ | 11.77 грн |
| 500+ | 8.55 грн |
| 1000+ | 7.62 грн |
| MER502FT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 100A; ITO220AC; tube; Ir: 60uA
Mounting: THT
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 5A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: ITO220AC
Type of diode: rectifying
Reverse recovery time: 37ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; Ifsm: 100A; ITO220AC; tube; Ir: 60uA
Mounting: THT
Max. forward impulse current: 100A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 5A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 60µA
Case: ITO220AC
Type of diode: rectifying
Reverse recovery time: 37ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 90.25 грн |
| 10+ | 53.75 грн |
| 50+ | 41.31 грн |
| 100+ | 36.99 грн |
| MER502T_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tube; Ifsm: 100A; TO220AC; Ir: 60uA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Case: TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 5A
Max. forward impulse current: 100A
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5A; tube; Ifsm: 100A; TO220AC; Ir: 60uA
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Case: TO220AC
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 37ns
Leakage current: 60µA
Max. forward voltage: 0.95V
Load current: 5A
Max. forward impulse current: 100A
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 90.25 грн |
| 10+ | 53.75 грн |
| 50+ | 41.39 грн |
| 100+ | 37.08 грн |
| MER802FT_T0_00601 |
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Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; ITO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: ITO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; ITO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: ITO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
товару немає в наявності
В кошику
од. на суму грн.
| MER802T_T0_00601 |
![]() |
Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 120A; TO220AC; Ir: 75uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 120A
Case: TO220AC
Max. forward voltage: 0.95V
Leakage current: 75µA
Reverse recovery time: 43ns
товару немає в наявності
В кошику
од. на суму грн.
| MMBD3004BRM_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 350V; 0.225A; 50ns; SOT23-6; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Max. off-state voltage: 350V
Load current: 0.225A
Max. load current: 0.625A
Kind of package: reel; tape
Semiconductor structure: double series x2
Leakage current: 0.1mA
Case: SOT23-6
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 350V; 0.225A; 50ns; SOT23-6; Ufmax: 1.25V
Mounting: SMD
Reverse recovery time: 50ns
Max. forward impulse current: 1A
Max. forward voltage: 1.25V
Features of semiconductor devices: fast switching
Max. off-state voltage: 350V
Load current: 0.225A
Max. load current: 0.625A
Kind of package: reel; tape
Semiconductor structure: double series x2
Leakage current: 0.1mA
Case: SOT23-6
Type of diode: switching
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.91 грн |
| 22+ | 19.47 грн |
| 50+ | 14.64 грн |
| 100+ | 13.04 грн |
| 500+ | 10.07 грн |
| 1000+ | 9.14 грн |
| MMBD4148TS_R1_00001 |
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Виробник: PanJit Semiconductor
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD523; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD523
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Leakage current: 2.5µA
на замовлення 2915 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 72+ | 6.38 грн |
| 107+ | 3.98 грн |
| 146+ | 2.91 грн |
| 500+ | 2.47 грн |
| 1000+ | 2.24 грн |
| MMBT2222A-AU_R1_000A1 |
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Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| MMBT2222A_R1_00501 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.225W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.225W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.






























