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P6SMBJ90A_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90CA_R1_00001 PanJit Semiconductor P6SMBJ_SERIES.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501 PanJit Semiconductor Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA-AU_R1_000A1 PanJit Semiconductor PBHV8110DA.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
28+16.31 грн
43+10.09 грн
Мінімальне замовлення: 28
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PCDF0465G1_T0_00601 PanJit Semiconductor PCDF0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDF0665G1_T0_00601 PanJit Semiconductor PCDF0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0665G3_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0865G1_T0_00601 PanJit Semiconductor PCDF0865G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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PCDH20120CCG1_T0_00601 PCDH20120CCG1_T0_00601 PanJit Semiconductor PCDH20120CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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PCDH20120CCGB_T0_00601 PanJit Semiconductor Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
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PCDH2065CCG1_T0_00601 PCDH2065CCG1_T0_00601 PanJit Semiconductor PCDH2065CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
2+361.45 грн
5+302.82 грн
30+267.49 грн
Мінімальне замовлення: 2
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PCDH2065CCGB_T0_00601 PanJit Semiconductor PCDH2065CCGB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PCDH2065CCGC_T0_00601 PanJit Semiconductor PCDH2065CCGC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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PCDH3065CCG1_T0_00601 PCDH3065CCG1_T0_00601 PanJit Semiconductor PCDH3065CCG1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
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PCDH3065CCGB_T0_00601 PanJit Semiconductor PCDH3065CCGB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
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PCDH3065CCGC_T0_00601 PanJit Semiconductor PCDH3065CCGC.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PDZ10B-AU_R1_000A1 PDZ10B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ10B_R1_00001 PDZ10B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ33B-AU_R1_000A1 PDZ33B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ33B_R1_00001 PDZ33B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ8.2B-AU_R1_000A1 PDZ8.2B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ8.2B_R1_00001 PDZ8.2B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 8085 шт:
термін постачання 14-30 дні (днів)
72+6.34 грн
79+5.38 грн
100+5.01 грн
250+4.58 грн
500+4.36 грн
1000+4.31 грн
Мінімальне замовлення: 72
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PE1805C4C6_R1_00001 PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
34+13.59 грн
55+7.74 грн
100+5.42 грн
500+4.43 грн
1000+4.12 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
100+4.53 грн
143+2.94 грн
204+2.07 грн
500+1.77 грн
1000+1.68 грн
Мінімальне замовлення: 100
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PE4728L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)
16+29.89 грн
25+17.33 грн
100+10.77 грн
500+7.99 грн
1000+7.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 32998 шт:
термін постачання 14-30 дні (днів)
20+22.65 грн
28+15.56 грн
100+8.24 грн
250+7.40 грн
500+6.90 грн
1000+6.56 грн
3000+5.89 грн
9000+5.80 грн
Мінімальне замовлення: 20
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PJA3415AE-AU_R1_000A1 PanJit Semiconductor PJA3415AE-AU.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
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PJA3415AE_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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PJA3430-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
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PJA3430_R1_00001 PJA3430_R1_00001 PanJit Semiconductor PJA3430.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2330 шт:
термін постачання 14-30 дні (днів)
27+17.21 грн
44+9.76 грн
100+5.96 грн
500+4.35 грн
1000+3.87 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3432-AU_R1_000A1 PJA3432-AU_R1_000A1 PanJit Semiconductor PJA3432-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)
27+17.21 грн
44+9.76 грн
100+6.12 грн
500+4.45 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3433-AU_R1_000A1 PJA3433-AU_R1_000A1 PanJit Semiconductor PJA3433-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
27+17.21 грн
44+9.76 грн
100+6.14 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 3652 шт:
термін постачання 14-30 дні (днів)
39+11.78 грн
49+8.75 грн
100+6.48 грн
500+5.80 грн
1000+4.63 грн
3000+4.54 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
PJA3434-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
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PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
на замовлення 3740 шт:
термін постачання 14-30 дні (днів)
30+15.40 грн
47+9.08 грн
100+5.32 грн
500+3.77 грн
1000+3.52 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
на замовлення 5960 шт:
термін постачання 14-30 дні (днів)
20+23.55 грн
33+13.04 грн
100+8.43 грн
500+6.32 грн
1000+5.59 грн
3000+4.65 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)
20+22.65 грн
34+12.53 грн
100+7.77 грн
500+5.70 грн
1000+5.06 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJA3436_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
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PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
18+25.36 грн
28+15.31 грн
100+9.59 грн
500+6.97 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PJA3438_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
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PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
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PJA3439_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
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PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 9065 шт:
термін постачання 14-30 дні (днів)
15+30.80 грн
26+16.23 грн
100+10.26 грн
250+8.50 грн
500+7.40 грн
1000+7.07 грн
3000+6.56 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB120N04V-AU_R2_002A1 PanJit Semiconductor PJB120N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
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PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.18Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
Power dissipation: 0.35W
Gate-source voltage: ±12V
Kind of package: reel; tape
на замовлення 3105 шт:
термін постачання 14-30 дні (днів)
14+32.61 грн
23+18.51 грн
100+11.86 грн
250+10.09 грн
500+8.92 грн
1000+7.99 грн
3000+6.73 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7545 шт:
термін постачання 14-30 дні (днів)
50+9.06 грн
69+6.14 грн
100+5.72 грн
500+5.38 грн
1000+4.96 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PJC7410_R1_00001 PanJit Semiconductor PJC7410.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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PJD25N04V-AU_L2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; Idm: 168A; 18W; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 18W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 168A
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PJD30N04S-AU_L2_002A1 PanJit Semiconductor PJD30N04S-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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P6SMBJ90A_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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P6SMBJ90CA_R1_00001 P6SMBJ_SERIES.pdf
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 100÷111V; 4.1A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 4.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
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PBHV8050SA_R1_00501
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 500V; 0.15A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 500V
Collector current: 0.15A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
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PBHV8110DA-AU_R1_000A1 PBHV8110DA.pdf
PBHV8110DA-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Type of transistor: NPN
Case: SOT23
Collector current: 1A
Power dissipation: 1.25W
Pulsed collector current: 3A
Collector-emitter voltage: 100V
Current gain: 100...300
Frequency: 100MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.31 грн
43+10.09 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
PCDF0465G1_T0_00601 PCDF0465G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; ITO220AC; Ir: 40uA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.8V
Power dissipation: 53.6W
Kind of package: tube
Technology: SiC
Leakage current: 40µA
Max. load current: 20A
Max. forward impulse current: 360A
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PCDF0465G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 4A; ITO220AC; Ufmax: 1.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 1.5V
Power dissipation: 53.6W
Kind of package: Ammo Pack
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PCDF0665G1_T0_00601 PCDF0665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; Ir: 50uA
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Leakage current: 50µA
Load current: 6A
Max. forward voltage: 1.8V
Max. load current: 24A
Max. forward impulse current: 0.32kA
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0665G3_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 650V; 6A; ITO220AC; Ufmax: 1.5V
Kind of package: Ammo Pack
Case: ITO220AC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. forward voltage: 1.5V
Power dissipation: 70.8W
Max. off-state voltage: 650V
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PCDF0865G1_T0_00601 PCDF0865G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; ITO220AC; Ir: 60uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Leakage current: 60µA
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 0.48kA
Power dissipation: 78.1W
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PCDH20120CCG1_T0_00601 PCDH20120CCG1.pdf
PCDH20120CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 167.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 52A
Max. forward impulse current: 720A
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 2V
Power dissipation: 167.8W
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PCDH20120CCGB_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 209W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. load current: 72A
Max. forward impulse current: 0.92kA
Leakage current: 0.1mA
Kind of package: tube
Max. forward voltage: 1.9V
Power dissipation: 209W
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PCDH2065CCG1_T0_00601 PCDH2065CCG1.pdf
PCDH2065CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 70uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 40A
Max. forward impulse current: 0.64kA
Leakage current: 70µA
Power dissipation: 98W
Kind of package: tube
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+361.45 грн
5+302.82 грн
30+267.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PCDH2065CCGB_T0_00601 PCDH2065CCGB.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PCDH2065CCGC_T0_00601 PCDH2065CCGC.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; 90W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 28A
Max. forward impulse current: 384A
Leakage current: 0.1mA
Power dissipation: 90W
Kind of package: tube
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PCDH3065CCG1_T0_00601 PCDH3065CCG1.pdf
PCDH3065CCG1_T0_00601
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 135.1W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 64A
Max. forward impulse current: 0.8kA
Leakage current: 0.1mA
Power dissipation: 135.1W
Kind of package: tube
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PCDH3065CCGB_T0_00601 PCDH3065CCGB.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 217W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.4V
Max. load current: 76A
Max. forward impulse current: 960A
Leakage current: 0.1mA
Power dissipation: 217W
Kind of package: tube
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PCDH3065CCGC_T0_00601 PCDH3065CCGC.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 138W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.8V
Max. load current: 48A
Max. forward impulse current: 704A
Leakage current: 0.1mA
Power dissipation: 138W
Kind of package: tube
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PDZ10B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ10B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
Application: automotive industry
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PDZ10B_R1_00001 PDZ4.7B_SER.pdf
PDZ10B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 10V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Tolerance: ±2%
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PDZ33B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ33B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ33B_R1_00001 PDZ4.7B_SER.pdf
PDZ33B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 33V; SMD; reel,tape; SOD323; single diode
Power dissipation: 0.4W
Tolerance: ±2%
Zener voltage: 33V
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Case: SOD323
Type of diode: Zener
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PDZ8.2B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ8.2B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Application: automotive industry
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PDZ8.2B_R1_00001 PDZ4.7B_SER.pdf
PDZ8.2B_R1_00001
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
PE1805C4A6_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; Ch: 4; ESD
Case: SOT23-6
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 8085 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
72+6.34 грн
79+5.38 грн
100+5.01 грн
250+4.58 грн
500+4.36 грн
1000+4.31 грн
Мінімальне замовлення: 72
В кошику  од. на суму  грн.
PE1805C4C6_R1_00001 PE1805C4C6.pdf
PE1805C4C6_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; Ch: 4; reel,tape
Case: SOT363
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 0.8pF
Leakage current: 1µA
Number of channels: 4
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6...9V
Application: Ethernet; USB
Semiconductor structure: unidirectional
Version: ESD
на замовлення 2970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.59 грн
55+7.74 грн
100+5.42 грн
500+4.43 грн
1000+4.12 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; Ch: 1; ESD
Version: ESD
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
на замовлення 2750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
100+4.53 грн
143+2.94 грн
204+2.07 грн
500+1.77 грн
1000+1.68 грн
Мінімальне замовлення: 100
В кошику  од. на суму  грн.
PE4728L1Q-AU_R1_002A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Application: automotive industry
Capacitance: 0.23nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 27.5A
Max. off-state voltage: 28V
Breakdown voltage: 30V
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PEC11SD03M1Q_R1_00501
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1605M1Q-AU_R1_005A1
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
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PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PJ30072S6_R1_00301 PJ30072.pdf
Виробник: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Uin: 750mVDC÷5.5VDC; SOT23-6; Converter: DC/DC
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
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PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2364 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
16+29.89 грн
25+17.33 грн
100+10.77 грн
500+7.99 грн
1000+7.15 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 32998 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.65 грн
28+15.56 грн
100+8.24 грн
250+7.40 грн
500+6.90 грн
1000+6.56 грн
3000+5.89 грн
9000+5.80 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJA3415AE-AU_R1_000A1 PJA3415AE-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -500mA; SOT363
Mounting: SMD
Gate-source voltage: 10V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Case: SOT363
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
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PJA3415AE_R1_00501
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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PJA3430-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.6A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
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PJA3430_R1_00001 PJA3430.pdf
PJA3430_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 8A
Drain current: 2A
Gate charge: 1.8nC
On-state resistance: 0.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 2330 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.21 грн
44+9.76 грн
100+5.96 грн
500+4.35 грн
1000+3.87 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3432-AU_R1_000A1 PJA3432-AU.pdf
PJA3432-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 6.4A
Drain current: 1.6A
Gate charge: 1.5nC
On-state resistance: 570mΩ
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 1735 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.21 грн
44+9.76 грн
100+6.12 грн
500+4.45 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3433-AU_R1_000A1 PJA3433-AU.pdf
PJA3433-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Application: automotive industry
Kind of channel: enhancement
на замовлення 232 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.21 грн
44+9.76 грн
100+6.14 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -4.4A
Drain current: -1.1A
Gate charge: 1.6nC
On-state resistance: 0.97Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Kind of channel: enhancement
на замовлення 3652 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.78 грн
49+8.75 грн
100+6.48 грн
500+5.80 грн
1000+4.63 грн
3000+4.54 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
PJA3434-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Gate-source voltage: 20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
On-state resistance: 3Ω
Power dissipation: 0.5W
Drain current: 0.75A
Pulsed drain current: 1.5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
на замовлення 3740 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
30+15.40 грн
47+9.08 грн
100+5.32 грн
500+3.77 грн
1000+3.52 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -500mA
Pulsed drain current: -1A
Gate charge: 1.4nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±10V
на замовлення 5960 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.55 грн
33+13.04 грн
100+8.43 грн
500+6.32 грн
1000+5.59 грн
3000+4.65 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4.8A
Drain current: 1.2A
Gate charge: 0.9nC
On-state resistance: 0.9Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Application: automotive industry
Kind of channel: enhancement
на замовлення 2978 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.65 грн
34+12.53 грн
100+7.77 грн
500+5.70 грн
1000+5.06 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PJA3436_R1_00501
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 500mA; SOT563
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Gate-source voltage: 10V
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: 50V
Pulsed drain current: 1.2A
Drain current: 0.5A
Gate charge: 0.95nC
On-state resistance: 6Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.36 грн
28+15.31 грн
100+9.59 грн
500+6.97 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
PJA3438_R1_00501
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 700mA; SOT563
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.5W
Gate-source voltage: ±20V
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJA3439_R1_00501
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; 20V; -600mA; SOT563
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Case: SOT563
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: -600mA
Gate-source voltage: 8V
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJA3471_R1_00501
PJA3471_R1_00501
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Kind of package: reel; tape
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Pulsed drain current: -3.6A
Drain current: -900mA
Gate charge: 8nC
On-state resistance: 0.7Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Polarisation: unipolar
на замовлення 9065 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
15+30.80 грн
26+16.23 грн
100+10.26 грн
250+8.50 грн
500+7.40 грн
1000+7.07 грн
3000+6.56 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Mounting: SMD
Case: TO220AB
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 80V
Drain current: 166A
Application: automotive industry
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
On-state resistance: 0.18Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -6A
Drain current: -1.5A
Gate charge: 11nC
Power dissipation: 0.35W
Gate-source voltage: ±12V
Kind of package: reel; tape
на замовлення 3105 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+32.61 грн
23+18.51 грн
100+11.86 грн
250+10.09 грн
500+8.92 грн
1000+7.99 грн
3000+6.73 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Case: SOT323
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -1.3A
Drain-source voltage: -20V
Pulsed drain current: -5.2A
Gate charge: 5.4nC
On-state resistance: 0.2Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
на замовлення 7545 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+9.06 грн
69+6.14 грн
100+5.72 грн
500+5.38 грн
1000+4.96 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
PJC7410_R1_00001 PJC7410.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 38A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
PJD10P10A_L2_00601
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 10A
Drain-source voltage: 100V
Gate-source voltage: 20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
PJD25N04V-AU_L2_002A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 42A; Idm: 168A; 18W; TO252AA
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 42A
Power dissipation: 18W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 11.3mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 168A
товару немає в наявності
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PJD30N04S-AU_L2_002A1 PJD30N04S-AU
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
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