Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1490) > Сторінка 13 з 25
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 745 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 745 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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| PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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| PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA кількість в упаковці: 1 шт |
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| PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA |
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| PCDB0865G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.5W кількість в упаковці: 1 шт |
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| PCDB0865G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 36A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 60µA Max. forward impulse current: 0.48kA Power dissipation: 78.5W |
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| PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W кількість в упаковці: 1 шт |
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| PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 0.55kA кількість в упаковці: 1 шт |
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| PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 0.55kA |
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| PCDB20120G1_R2_00001 | PanJit Semiconductor |
PCDB20120G1-R2 SMD Schottky diodes |
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PCDD0465G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 1 шт |
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PCDD0465G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
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| PCDD0465GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 17A Power dissipation: 51W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 320A Max. forward voltage: 1.4V Leakage current: 0.1mA кількість в упаковці: 1 шт |
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| PCDD0465GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 17A Power dissipation: 51W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 320A Max. forward voltage: 1.4V Leakage current: 0.1mA |
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PCDD05120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W кількість в упаковці: 1 шт |
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PCDD05120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 520A Power dissipation: 120W |
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| PCDD0665G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W кількість в упаковці: 1 шт |
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| PCDD0665G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO252AA Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 64.9W |
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| PCDD0665GB_L2_00601 | PanJit Semiconductor | PCDD0665GB-L2 SMD Schottky diodes |
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| PCDD08120G1_L2_00001 | PanJit Semiconductor |
PCDD08120G1-L2 SMD Schottky diodes |
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| PCDD0865G1_L2_00001 | PanJit Semiconductor | PCDD0865G1-L2 SMD Schottky diodes |
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| PCDD0865GB_L2_00601 | PanJit Semiconductor | PCDD0865GB-L2 SMD Schottky diodes |
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| PCDD10120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode кількість в упаковці: 3000 шт |
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| PCDD10120G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO252AA Kind of package: reel; tape Power dissipation: 200W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode |
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PCDD1065G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Power dissipation: 99.3W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO252AA Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA кількість в упаковці: 1 шт |
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PCDD1065G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Power dissipation: 99.3W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO252AA Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA |
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| PCDD1065GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Power dissipation: 90W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO252AA Max. off-state voltage: 650V Max. load current: 36A Max. forward voltage: 1.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 664A Leakage current: 0.1mA кількість в упаковці: 1 шт |
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| PCDD1065GB_L2_00601 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape Power dissipation: 90W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO252AA Max. off-state voltage: 650V Max. load current: 36A Max. forward voltage: 1.4V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 664A Leakage current: 0.1mA |
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| PCDE0465G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO263 Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 800 шт |
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| PCDE0465G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO263 Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA |
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| PCDE0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 62.5W кількість в упаковці: 800 шт |
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| PCDE0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Max. load current: 28A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 320A Power dissipation: 62.5W |
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| PCDE0865G1_R2_00001 | PanJit Semiconductor | PCDE0865G1-R2 SMD Schottky diodes |
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| PCDE10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO263 Kind of package: reel; tape Power dissipation: 164.8W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 76A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode кількість в упаковці: 800 шт |
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| PCDE10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Mounting: SMD Max. forward impulse current: 640A Leakage current: 0.1mA Case: TO263 Kind of package: reel; tape Power dissipation: 164.8W Type of diode: Schottky rectifying Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 76A Max. forward voltage: 2V Load current: 10A Semiconductor structure: single diode |
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| PCDE1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape Power dissipation: 102.7W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA кількість в упаковці: 800 шт |
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| PCDE1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape Power dissipation: 102.7W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: TO263 Max. off-state voltage: 650V Max. load current: 44A Max. forward voltage: 1.8V Load current: 10A Semiconductor structure: single diode Max. forward impulse current: 0.55kA Leakage current: 70µA |
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| PCDE20120G1_R2_00001 | PanJit Semiconductor | PCDE20120G1-R2 SMD Schottky diodes |
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| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 53.6W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 360A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 1 шт |
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| PCDF0465G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 53.6W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 360A Max. forward voltage: 1.8V Leakage current: 40µA |
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| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 24A Power dissipation: 70.8W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.8V Leakage current: 50µA кількість в упаковці: 1 шт |
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| PCDF0665G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Max. load current: 24A Power dissipation: 70.8W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 320A Max. forward voltage: 1.8V Leakage current: 50µA |
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| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Max. load current: 28A Power dissipation: 78.1W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 0.48kA Max. forward voltage: 1.8V Leakage current: 60µA кількість в упаковці: 1 шт |
товар відсутній |
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| PCDF0865G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Max. load current: 28A Power dissipation: 78.1W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 0.48kA Max. forward voltage: 1.8V Leakage current: 60µA |
товар відсутній |
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| PCDF1065G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Power dissipation: 104.2W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 560A Max. forward voltage: 1.8V Leakage current: 70µA кількість в упаковці: 1 шт |
товар відсутній |
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| PCDF1065G1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Max. load current: 36A Power dissipation: 104.2W Semiconductor structure: single diode Case: ITO220AC Kind of package: tube Max. forward impulse current: 560A Max. forward voltage: 1.8V Leakage current: 70µA |
товар відсутній |
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| PCDH20120CCG1_T0_00601 | PanJit Semiconductor |
PCDH20120CCG1-T0 THT Schottky diodes |
товар відсутній |
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| PCDH20120CCGB_T0_00601 | PanJit Semiconductor | PCDH20120CCGB-T0 THT Schottky diodes |
товар відсутній |
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 |
PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 98W Kind of package: tube Technology: SiC Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 640A Leakage current: 70µA кількість в упаковці: 1 шт |
товар відсутній |
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PCDH2065CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 98W Kind of package: tube Technology: SiC Max. load current: 40A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 640A Leakage current: 70µA |
товар відсутній |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 138W Kind of package: tube Technology: SiC Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA кількість в упаковці: 1 шт |
товар відсутній |
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| PCDH2065CCGB_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 138W Kind of package: tube Technology: SiC Max. load current: 48A Max. forward voltage: 1.4V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 704A Leakage current: 0.1mA |
товар відсутній |
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| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 90W Kind of package: tube Technology: SiC Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA кількість в упаковці: 1 шт |
товар відсутній |
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| PCDH2065CCGC_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3 Type of diode: Schottky rectifying Case: TO247-3 Mounting: THT Max. off-state voltage: 650V Power dissipation: 90W Kind of package: tube Technology: SiC Max. load current: 28A Max. forward voltage: 1.8V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 384A Leakage current: 0.1mA |
товар відсутній |
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PCDH30120CCG1_T0_00601 | PanJit Semiconductor |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3 Kind of package: tube Max. forward impulse current: 720A Leakage current: 140µA Power dissipation: 230.8W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 1.2kV Max. load current: 72A Max. forward voltage: 2V Load current: 15A x2 Semiconductor structure: common cathode; double кількість в упаковці: 1 шт |
товар відсутній |
| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 745 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.68 грн |
| 35+ | 8.33 грн |
| 100+ | 7.25 грн |
| 170+ | 5.97 грн |
| 460+ | 5.63 грн |
| 2400+ | 5.46 грн |
| P6SMBJ6.0A_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 745 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.57 грн |
| 55+ | 6.68 грн |
| 100+ | 6.04 грн |
| 170+ | 4.98 грн |
| 460+ | 4.69 грн |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 12.68 грн |
| 30+ | 10.28 грн |
| 100+ | 8.96 грн |
| 135+ | 7.34 грн |
| 370+ | 6.91 грн |
| 2400+ | 6.66 грн |
| P6SMBJ7.5CA_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.57 грн |
| 45+ | 8.25 грн |
| 100+ | 7.47 грн |
| 135+ | 6.12 грн |
| 370+ | 5.76 грн |
| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.71 грн |
| 75+ | 4.77 грн |
| 225+ | 3.75 грн |
| 610+ | 3.54 грн |
| 3000+ | 3.53 грн |
| PBHV8110DA-AU_R1_000A1 |
|
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 45+ | 6.86 грн |
| 50+ | 5.95 грн |
| 225+ | 4.5 грн |
| 610+ | 4.25 грн |
| 3000+ | 4.24 грн |
| 9000+ | 4.1 грн |
| PCDB0665G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
| PCDB0665G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
товар відсутній
| PCDB0865G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
кількість в упаковці: 1 шт
товар відсутній
| PCDB0865G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 8A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 36A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 60µA
Max. forward impulse current: 0.48kA
Power dissipation: 78.5W
товар відсутній
| PCDB10120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
кількість в упаковці: 1 шт
товар відсутній
| PCDB10120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
товар відсутній
| PCDB1065G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
кількість в упаковці: 1 шт
товар відсутній
| PCDB1065G1_R2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
товар відсутній
| PCDB20120G1_R2_00001 |
|
Виробник: PanJit Semiconductor
PCDB20120G1-R2 SMD Schottky diodes
PCDB20120G1-R2 SMD Schottky diodes
товар відсутній
| PCDD0465G1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній
| PCDD0465G1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
| PCDD0465GB_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PCDD0465GB_L2_00601 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 17A
Power dissipation: 51W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 320A
Max. forward voltage: 1.4V
Leakage current: 0.1mA
товар відсутній
| PCDD05120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
кількість в упаковці: 1 шт
товар відсутній
| PCDD05120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 5A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 520A
Power dissipation: 120W
товар відсутній
| PCDD0665G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
кількість в упаковці: 1 шт
товар відсутній
| PCDD0665G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO252AA
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 64.9W
товар відсутній
| PCDD08120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
PCDD08120G1-L2 SMD Schottky diodes
PCDD08120G1-L2 SMD Schottky diodes
товар відсутній
| PCDD10120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 3000 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 3000 шт
товар відсутній
| PCDD10120G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO252AA; 200W
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO252AA
Kind of package: reel; tape
Power dissipation: 200W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
товар відсутній
| PCDD1065G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 99.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 99.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 1 шт
товар відсутній
| PCDD1065G1_L2_00001 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 99.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 99.3W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
товар відсутній
| PCDD1065GB_L2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PCDD1065GB_L2_00601 |
|
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO252AA; reel,tape
Power dissipation: 90W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO252AA
Max. off-state voltage: 650V
Max. load current: 36A
Max. forward voltage: 1.4V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 664A
Leakage current: 0.1mA
товар відсутній
| PCDE0465G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 800 шт
товар відсутній
| PCDE0465G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO263
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
| PCDE0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
кількість в упаковці: 800 шт
товар відсутній
| PCDE0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 62.5W
товар відсутній
| PCDE10120G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
кількість в упаковці: 800 шт
товар відсутній
| PCDE10120G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Mounting: SMD
Max. forward impulse current: 640A
Leakage current: 0.1mA
Case: TO263
Kind of package: reel; tape
Power dissipation: 164.8W
Type of diode: Schottky rectifying
Technology: SiC
Max. off-state voltage: 1.2kV
Max. load current: 76A
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
товар відсутній
| PCDE1065G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 800 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 800 шт
товар відсутній
| PCDE1065G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; TO263; reel,tape
Power dissipation: 102.7W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: TO263
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
товар відсутній
| PCDE20120G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDE20120G1-R2 SMD Schottky diodes
PCDE20120G1-R2 SMD Schottky diodes
товар відсутній
| PCDF0465G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 53.6W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 360A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 53.6W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 360A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній
| PCDF0465G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 53.6W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 360A
Max. forward voltage: 1.8V
Leakage current: 40µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 53.6W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 53.6W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 360A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
| PCDF0665G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 24A
Power dissipation: 70.8W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.8V
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 24A
Power dissipation: 70.8W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.8V
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
| PCDF0665G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 24A
Power dissipation: 70.8W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.8V
Leakage current: 50µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 70.8W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 24A
Power dissipation: 70.8W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 320A
Max. forward voltage: 1.8V
Leakage current: 50µA
товар відсутній
| PCDF0865G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 28A
Power dissipation: 78.1W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.8V
Leakage current: 60µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 28A
Power dissipation: 78.1W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.8V
Leakage current: 60µA
кількість в упаковці: 1 шт
товар відсутній
| PCDF0865G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 28A
Power dissipation: 78.1W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.8V
Leakage current: 60µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; 78.1W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Max. load current: 28A
Power dissipation: 78.1W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 0.48kA
Max. forward voltage: 1.8V
Leakage current: 60µA
товар відсутній
| PCDF1065G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Power dissipation: 104.2W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 560A
Max. forward voltage: 1.8V
Leakage current: 70µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Power dissipation: 104.2W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 560A
Max. forward voltage: 1.8V
Leakage current: 70µA
кількість в упаковці: 1 шт
товар відсутній
| PCDF1065G1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Power dissipation: 104.2W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 560A
Max. forward voltage: 1.8V
Leakage current: 70µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 104.2W; ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 36A
Power dissipation: 104.2W
Semiconductor structure: single diode
Case: ITO220AC
Kind of package: tube
Max. forward impulse current: 560A
Max. forward voltage: 1.8V
Leakage current: 70µA
товар відсутній
| PCDH20120CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
PCDH20120CCG1-T0 THT Schottky diodes
PCDH20120CCG1-T0 THT Schottky diodes
товар відсутній
| PCDH20120CCGB_T0_00601 |
Виробник: PanJit Semiconductor
PCDH20120CCGB-T0 THT Schottky diodes
PCDH20120CCGB-T0 THT Schottky diodes
товар відсутній
| PCDH2065CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
кількість в упаковці: 1 шт
товар відсутній
| PCDH2065CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 98W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 98W
Kind of package: tube
Technology: SiC
Max. load current: 40A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 640A
Leakage current: 70µA
товар відсутній
| PCDH2065CCGB_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PCDH2065CCGB_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 138W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 138W
Kind of package: tube
Technology: SiC
Max. load current: 48A
Max. forward voltage: 1.4V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 704A
Leakage current: 0.1mA
товар відсутній
| PCDH2065CCGC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
| PCDH2065CCGC_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; 90W; TO247-3
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 650V
Power dissipation: 90W
Kind of package: tube
Technology: SiC
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 384A
Leakage current: 0.1mA
товар відсутній
| PCDH30120CCG1_T0_00601 |
|
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; 230.8W; TO247-3
Kind of package: tube
Max. forward impulse current: 720A
Leakage current: 140µA
Power dissipation: 230.8W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO247-3
Max. off-state voltage: 1.2kV
Max. load current: 72A
Max. forward voltage: 2V
Load current: 15A x2
Semiconductor structure: common cathode; double
кількість в упаковці: 1 шт
товар відсутній