Продукція > RENESAS ELECTRONICS CORPORATION > Всі товари виробника RENESAS ELECTRONICS CORPORATION (30432) > Сторінка 274 з 508
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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NP180N055TUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 180A TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NP180N055TUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 180A TO263-7Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V |
на замовлення 2182 шт: термін постачання 21-31 дні (днів) |
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NP35N055YUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 35A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V Power Dissipation (Max): 1W (Ta), 97W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP35N055YUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 55V 35A 8HSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V Power Dissipation (Max): 1W (Ta), 97W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP36P04KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.8W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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NP36P04KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.8W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1577 шт: термін постачання 21-31 дні (днів) |
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NP36P04SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP36P04SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 36A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V Power Dissipation (Max): 1.2W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5130 шт: термін постачання 21-31 дні (днів) |
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NP50N04YUK-E1-AY | Renesas Electronics Corporation |
Description: LOW VOLTAGE POWER MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Power Dissipation (Max): 1W (Ta), 97W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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NP50N04YUK-E1-AY | Renesas Electronics Corporation |
Description: LOW VOLTAGE POWER MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerLDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V Power Dissipation (Max): 1W (Ta), 97W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON (5x5.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4894 шт: термін постачання 21-31 дні (днів) |
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NP50P04KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 50A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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NP50P04KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 50A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2877 шт: термін постачання 21-31 дні (днів) |
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NP50P04SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 50A TO252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP50P04SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 8683 шт: термін постачання 21-31 дні (днів) |
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NP50P06KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 60V 50A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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NP50P06KDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 60V 50A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta), 90W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-263 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 719 шт: термін постачання 21-31 дні (днів) |
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NP50P06SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 60V 50A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 152500 шт: термін постачання 21-31 дні (днів) |
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NP50P06SDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 60V 50A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V Power Dissipation (Max): 1.2W (Ta), 84W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZK) Grade: Automotive Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 154468 шт: термін постачання 21-31 дні (днів) |
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NP75P03YDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 30V 75A 8HSONPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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NP75P03YDG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 30V 75A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4742 шт: термін постачання 21-31 дні (днів) |
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NP75P04YLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 75A 8HSONPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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NP75P04YLG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET P-CH 40V 75A 8HSONPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 138W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-HSON Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6053 шт: термін постачання 21-31 дні (днів) |
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NP89N04PUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 90A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V |
на замовлення 2400 шт: термін постачання 21-31 дні (днів) |
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NP89N04PUK-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 90A TO263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V Power Dissipation (Max): 1.8W (Ta), 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V |
на замовлення 3075 шт: термін постачання 21-31 дні (днів) |
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R5F566NDDDLK#20 | Renesas Electronics Corporation |
Description: IC MCU 32BIT 2MB FLASH 145TFLGAPackaging: Tray Package / Case: 145-TFLGA Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 2MB (2M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: RXv3 Data Converters: A/D 29x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 145-TFLGA (7x7) Number of I/O: 111 DigiKey Programmable: Not Verified |
на замовлення 1406 шт: термін постачання 21-31 дні (днів) |
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R5F566NNDDBG#20 | Renesas Electronics Corporation |
Description: IC MCU 32BIT 4MB FLASH 176LFBGA |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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R5F566NNDDFC#30 | Renesas Electronics Corporation |
Description: IC MCU 32BIT 4MB FLASH 176LFQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 4MB (4M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: RXv3 Data Converters: A/D 8x12b, 21x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 176-LFQFP (24x24) Part Status: Active Number of I/O: 136 DigiKey Programmable: Not Verified |
на замовлення 54 шт: термін постачання 21-31 дні (днів) |
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R5F566NNHDFC#30 | Renesas Electronics Corporation |
Description: IC MCU 32BIT 4MB FLASH 176LFQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 4MB (4M x 8) RAM Size: 1M x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 32K x 8 Core Processor: RXv3 Data Converters: A/D 29x12b; D/A 2x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: CANbus, EBI/EMI, Ethernet, I²C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG Peripherals: DMA, LCD, LVD, POR, PWM, WDT Supplier Device Package: 176-LFQFP (24x24) Part Status: Active Number of I/O: 136 DigiKey Programmable: Not Verified |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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| 74HC123AP-E | Renesas Electronics Corporation |
Description: IC UNI-LOGIC GATE BUFFER SMD Packaging: Tape & Reel (TR) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| ZSSC3230BC1D-ES | Renesas Electronics Corporation |
Description: IC CAP SENSOR SIGNAL COND ENG SM Packaging: Bulk Package / Case: Die Output Type: I²C Mounting Type: Surface Mount Type: Capacitive Sensor Operating Temperature: -40°C ~ 85°C (TA) Input Type: Analog, Digital Supplier Device Package: Die Part Status: Active Current - Supply: 1.1 mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RTK7EKA2E1S00001BE | Renesas Electronics Corporation |
Description: EK-RA2E1 R7FA2E1 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s) Core Processor: ARM® Cortex®-M23 Utilized IC / Part: RA2E1, R7FA2E1 Platform: EK-RA2E1 |
на замовлення 26 шт: термін постачання 21-31 дні (днів) |
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RTK7EKA4M1S00001BU | Renesas Electronics Corporation |
Description: EK-RA4M1 R7FA4M1 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s) Core Processor: ARM® Cortex®-M4F Utilized IC / Part: RA4M1, R7FA4M1 Platform: EK-RA4M1 |
на замовлення 21 шт: термін постачання 21-31 дні (днів) |
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RTK7EKA6M1S00001BU | Renesas Electronics Corporation |
Description: EK-RA6M1 R7FA6M1 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s) Core Processor: ARM® Cortex®-M4F Utilized IC / Part: RA6M1, R7FA6M1 Platform: EK-RA6M1 |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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RTK7EKA6M5S00001BE | Renesas Electronics Corporation |
Description: EK-RA6M5 R7FA6M5 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s) Core Processor: ARM® Cortex®-M33 Utilized IC / Part: RA6M5, R7FA6M5 Platform: EK-RA6M5 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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RTK7FPA4E1S00001BE | Renesas Electronics Corporation |
Description: FPB-RA4E1 R7FA4E1 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M33 Utilized IC / Part: RA4E1, R7FA4E1 Platform: FPB-RA4E1 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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RTK7FPA6E1S00001BE | Renesas Electronics Corporation |
Description: FPB-RA6E1 R7FA6E1 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M33 Utilized IC / Part: RA6E1, R7FA6E1 Platform: FPB-RA6E1 |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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ISL68301IRAZ-T7A | Renesas Electronics Corporation |
Description: SNGL PH DIG DC/DC CONT Packaging: Tape & Reel (TR) Package / Case: 24-VFQFN Exposed Pad Output Type: PWM Mounting Type: Surface Mount Function: Step-Down Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 200kHz ~ 1MHz Topology: Buck Voltage - Supply (Vcc/Vdd): 4.75V ~ 16V, 4.5V ~ 5.5V Supplier Device Package: 24-QFN (4x4) Synchronous Rectifier: No Control Features: Enable, Power Good Serial Interfaces: I²C, PMBus, SMBus Output Phases: 1 Clock Sync: Yes Number of Outputs: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| M3016316035NX0IBCY | Renesas Electronics Corporation |
Description: IC RAM 16MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Technology: MRAM (Magnetoresistive RAM) Memory Format: RAM Supplier Device Package: 48-FBGA (10x10) Part Status: Active Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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| M3016316045NX0IBCY | Renesas Electronics Corporation |
Description: IC RAM 16MBIT PARALLEL 48FBGAPackaging: Tray Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Technology: MRAM (Magnetoresistive RAM) Memory Format: RAM Supplier Device Package: 48-FBGA (10x10) Part Status: Active Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 1M x 16 DigiKey Programmable: Not Verified |
на замовлення 121 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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RV1S2211ACCSP-10YV#SC0 | Renesas Electronics Corporation |
Description: OPTO COUPLER IN 4PIN SSOPPackaging: Strip Package / Case: 4-SOP (0.295", 7.50mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 115°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 40mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-LSSOP Voltage - Output (Max): 40V Rise / Fall Time (Typ): 4µs, 5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 422 шт: термін постачання 21-31 дні (днів) |
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RV1S2285ACCSP-10YC#SC0 | Renesas Electronics Corporation |
Description: OPTO COUPLER IN 4PIN SSOPPackaging: Strip Package / Case: 4-SOP (0.295", 7.50mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 115°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-LSSOP Voltage - Output (Max): 80V Rise / Fall Time (Typ): 4µs, 5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 5292 шт: термін постачання 21-31 дні (днів) |
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RV1S2285ACCSP-10YV#SC0 | Renesas Electronics Corporation |
Description: OPTO COUPLER IN 4PIN SSOPPackaging: Strip Package / Case: 4-SOP (0.295", 7.50mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 115°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: AC, DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-LSSOP Voltage - Output (Max): 80V Rise / Fall Time (Typ): 4µs, 5µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 30 mA |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
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F2915EVBI | Renesas Electronics Corporation |
Description: RFPackaging: Box For Use With/Related Products: F2915 Frequency: 50MHz ~ 8GHz Type: Switch, SP5T Supplied Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SK2225-80-E#T2 | Renesas Electronics Corporation |
Description: ABU / MOSFETPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-3PFM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1500 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V |
на замовлення 396 шт: термін постачання 21-31 дні (днів) |
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| ATXP064B-CCUE-T | Renesas Electronics Corporation |
Description: IC FLASH 64MBIT SPI/OCTAL 24CBGA Packaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-CBGA (6x8) Write Cycle Time - Word, Page: 25µs, 12ms Memory Interface: SPI - Octal I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| AT25SL128A-UIUE-T | Renesas Electronics Corporation |
Description: IC FLASH 128MBIT SPI 21WLCSPPackaging: Tape & Reel (TR) Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 21-WLCSP (3.02x3.29) Write Cycle Time - Word, Page: 150µs, 5ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| AT25SL128A-UIUE-T | Renesas Electronics Corporation |
Description: IC FLASH 128MBIT SPI 21WLCSPPackaging: Cut Tape (CT) Package / Case: 21-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 21-WLCSP (3.02x3.29) Write Cycle Time - Word, Page: 150µs, 5ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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AT25SL128A-SUE-T | Renesas Electronics Corporation |
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 150µs, 5ms Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Verified |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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AT25SL641-SUE-T | Renesas Electronics Corporation |
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 150µs, 5ms Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Verified |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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2SK3814-Z-E1-AZ | Renesas Electronics Corporation |
Description: MP-3 ALPackaging: Strip Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V Power Dissipation (Max): 84W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-252 (MP-3Z) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RAA2900014H12HPD#GB2 | Renesas Electronics Corporation |
Description: MP-3ZK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 9V ~ 28V Applications: General Purpose Current - Supply: 708µA Supplier Device Package: TO-252 (MP-3ZP) |
товару немає в наявності |
Мінімальне замовлення: 1750 шт В кошику од. на суму грн. | ||||||||||||||
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RAA2900014H12HPD#GB2 | Renesas Electronics Corporation |
Description: MP-3ZK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 9V ~ 28V Applications: General Purpose Current - Supply: 708µA Supplier Device Package: TO-252 (MP-3ZP) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RAA2900024H12HPD#GB1 | Renesas Electronics Corporation |
Description: MP-3ZK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 9V ~ 28V Applications: General Purpose Current - Supply: 708µA Supplier Device Package: TO-252 (MP-3ZP) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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RAA2900034H12HPD#GB1 | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 9V ~ 28V Applications: General Purpose Current - Supply: 708µA Supplier Device Package: TO-252 (MP-3ZP) |
товару немає в наявності |
Мінімальне замовлення: 1300 шт В кошику од. на суму грн. | ||||||||||||||
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RAA2900034H12HPD#GB1 | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -20°C ~ 85°C (TA) Voltage - Supply: 9V ~ 28V Applications: General Purpose Current - Supply: 708µA Supplier Device Package: TO-252 (MP-3ZP) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UPD166031AT1U(1)-E1-AY | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Tape & Reel (TR) Package / Case: TO-252-7, DPak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Current - Supply: 2.2mA Supplier Device Package: TO-252-7 |
товару немає в наявності |
Мінімальне замовлення: 1250 шт В кошику од. на суму грн. | ||||||||||||||
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UPD166031AT1U(1)-E1-AY | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Cut Tape (CT) Package / Case: TO-252-7, DPak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Current - Supply: 2.2mA Supplier Device Package: TO-252-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UPD166032T1U(1)-E1-AY | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Tape & Reel (TR) Package / Case: TO-252-7, DPak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Current - Supply: 2.2mA Supplier Device Package: TO-252-7 |
товару немає в наявності |
Мінімальне замовлення: 1300 шт В кошику од. на суму грн. | ||||||||||||||
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UPD166032T1U(1)-E1-AY | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Cut Tape (CT) Package / Case: TO-252-7, DPak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Current - Supply: 2.2mA Supplier Device Package: TO-252-7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UPD166033T1U(1)-E1-AY | Renesas Electronics Corporation |
Description: MP-3ZKPackaging: Tape & Reel (TR) Package / Case: TO-252-7, DPak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 28V Applications: General Purpose Current - Supply: 2.2mA Supplier Device Package: TO-252-7 |
товару немає в наявності |
Мінімальне замовлення: 1150 шт В кошику од. на суму грн. |
| NP180N055TUK-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 171.61 грн |
| NP180N055TUK-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
на замовлення 2182 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 443.57 грн |
| 10+ | 285.86 грн |
| 100+ | 205.72 грн |
| NP35N055YUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.59 грн |
| NP35N055YUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 35A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 18A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3360 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 50.89 грн |
| NP36P04KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 36A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 77.45 грн |
| NP36P04KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 36A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.56 грн |
| 10+ | 140.44 грн |
| 100+ | 97.19 грн |
| NP36P04SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 36A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 55.98 грн |
| NP36P04SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 36A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 18A, 10V
Power Dissipation (Max): 1.2W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5130 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 189.65 грн |
| 10+ | 117.52 грн |
| 50+ | 89.48 грн |
| 100+ | 75.47 грн |
| 500+ | 60.57 грн |
| NP50N04YUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
Description: LOW VOLTAGE POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 50.97 грн |
| NP50N04YUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
Description: LOW VOLTAGE POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 1W (Ta), 97W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4894 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.57 грн |
| 10+ | 107.82 грн |
| 50+ | 81.91 грн |
| 100+ | 69.03 грн |
| 500+ | 55.27 грн |
| NP50P04KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 94.50 грн |
| 1600+ | 87.00 грн |
| NP50P04KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2877 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.08 грн |
| 10+ | 170.47 грн |
| 100+ | 119.59 грн |
| NP50P04SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 50A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 66.45 грн |
| NP50P04SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 50A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 8683 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.83 грн |
| 10+ | 86.04 грн |
| 100+ | 79.00 грн |
| 500+ | 73.50 грн |
| NP50P06KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 50A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| NP50P06KDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 50A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.17 грн |
| 10+ | 171.01 грн |
| 50+ | 132.02 грн |
| 100+ | 112.12 грн |
| NP50P06SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 152500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 74.56 грн |
| 7500+ | 67.32 грн |
| NP50P06SDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 50A TO-252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 25A, 10V
Power Dissipation (Max): 1.2W (Ta), 84W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZK)
Grade: Automotive
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 154468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 243.61 грн |
| 10+ | 152.21 грн |
| 50+ | 116.71 грн |
| 100+ | 98.79 грн |
| 500+ | 79.97 грн |
| NP75P03YDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| NP75P03YDG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4742 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 216.63 грн |
| 10+ | 135.71 грн |
| 100+ | 94.14 грн |
| 500+ | 74.88 грн |
| NP75P04YLG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 79.32 грн |
| NP75P04YLG-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6053 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.30 грн |
| 10+ | 160.69 грн |
| 50+ | 123.47 грн |
| 100+ | 104.61 грн |
| 500+ | 84.88 грн |
| NP89N04PUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Description: MOSFET N-CH 40V 90A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 83.48 грн |
| 1600+ | 79.37 грн |
| NP89N04PUK-E1-AY |
![]() |
Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
Description: MOSFET N-CH 40V 90A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 45A, 5V
Power Dissipation (Max): 1.8W (Ta), 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
на замовлення 3075 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 212.66 грн |
| 10+ | 140.22 грн |
| 100+ | 101.38 грн |
| R5F566NDDDLK#20 |
![]() |
Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 2MB FLASH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (7x7)
Number of I/O: 111
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 145TFLGA
Packaging: Tray
Package / Case: 145-TFLGA
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 145-TFLGA (7x7)
Number of I/O: 111
DigiKey Programmable: Not Verified
на замовлення 1406 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1051.39 грн |
| 10+ | 798.12 грн |
| 25+ | 744.71 грн |
| 80+ | 651.28 грн |
| 416+ | 605.60 грн |
| 832+ | 591.88 грн |
| R5F566NNDDBG#20 |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFBGA
Description: IC MCU 32BIT 4MB FLASH 176LFBGA
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1198.98 грн |
| 10+ | 916.48 грн |
| 25+ | 857.00 грн |
| R5F566NNDDFC#30 |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 8x12b, 21x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 8x12b, 21x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
на замовлення 54 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1268.02 грн |
| 10+ | 969.13 грн |
| 40+ | 879.53 грн |
| R5F566NNHDFC#30 |
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Виробник: Renesas Electronics Corporation
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 176LFQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: RXv3
Data Converters: A/D 29x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I²C, MMC/SD, QSPI, SCI, SPI, SSI, USB OTG
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 176-LFQFP (24x24)
Part Status: Active
Number of I/O: 136
DigiKey Programmable: Not Verified
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1216.44 грн |
| 10+ | 930.69 грн |
| 40+ | 845.07 грн |
| 74HC123AP-E |
Виробник: Renesas Electronics Corporation
Description: IC UNI-LOGIC GATE BUFFER SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Description: IC UNI-LOGIC GATE BUFFER SMD
Packaging: Tape & Reel (TR)
Part Status: Obsolete
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В кошику
од. на суму грн.
| ZSSC3230BC1D-ES |
Виробник: Renesas Electronics Corporation
Description: IC CAP SENSOR SIGNAL COND ENG SM
Packaging: Bulk
Package / Case: Die
Output Type: I²C
Mounting Type: Surface Mount
Type: Capacitive Sensor
Operating Temperature: -40°C ~ 85°C (TA)
Input Type: Analog, Digital
Supplier Device Package: Die
Part Status: Active
Current - Supply: 1.1 mA
DigiKey Programmable: Not Verified
Description: IC CAP SENSOR SIGNAL COND ENG SM
Packaging: Bulk
Package / Case: Die
Output Type: I²C
Mounting Type: Surface Mount
Type: Capacitive Sensor
Operating Temperature: -40°C ~ 85°C (TA)
Input Type: Analog, Digital
Supplier Device Package: Die
Part Status: Active
Current - Supply: 1.1 mA
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| RTK7EKA2E1S00001BE |
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Виробник: Renesas Electronics Corporation
Description: EK-RA2E1 R7FA2E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M23
Utilized IC / Part: RA2E1, R7FA2E1
Platform: EK-RA2E1
Description: EK-RA2E1 R7FA2E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M23
Utilized IC / Part: RA2E1, R7FA2E1
Platform: EK-RA2E1
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3997.67 грн |
| RTK7EKA4M1S00001BU |
Виробник: Renesas Electronics Corporation
Description: EK-RA4M1 R7FA4M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA4M1, R7FA4M1
Platform: EK-RA4M1
Description: EK-RA4M1 R7FA4M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA4M1, R7FA4M1
Platform: EK-RA4M1
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2859.00 грн |
| RTK7EKA6M1S00001BU |
Виробник: Renesas Electronics Corporation
Description: EK-RA6M1 R7FA6M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA6M1, R7FA6M1
Platform: EK-RA6M1
Description: EK-RA6M1 R7FA6M1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M4F
Utilized IC / Part: RA6M1, R7FA6M1
Platform: EK-RA6M1
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3539.82 грн |
| RTK7EKA6M5S00001BE |
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Виробник: Renesas Electronics Corporation
Description: EK-RA6M5 R7FA6M5 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6M5, R7FA6M5
Platform: EK-RA6M5
Description: EK-RA6M5 R7FA6M5 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6M5, R7FA6M5
Platform: EK-RA6M5
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4240.49 грн |
| RTK7FPA4E1S00001BE |
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Виробник: Renesas Electronics Corporation
Description: FPB-RA4E1 R7FA4E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA4E1, R7FA4E1
Platform: FPB-RA4E1
Description: FPB-RA4E1 R7FA4E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA4E1, R7FA4E1
Platform: FPB-RA4E1
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1562.41 грн |
| RTK7FPA6E1S00001BE |
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Виробник: Renesas Electronics Corporation
Description: FPB-RA6E1 R7FA6E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6E1, R7FA6E1
Platform: FPB-RA6E1
Description: FPB-RA6E1 R7FA6E1 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M33
Utilized IC / Part: RA6E1, R7FA6E1
Platform: FPB-RA6E1
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1807.60 грн |
| ISL68301IRAZ-T7A |
Виробник: Renesas Electronics Corporation
Description: SNGL PH DIG DC/DC CONT
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 16V, 4.5V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
Description: SNGL PH DIG DC/DC CONT
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Output Type: PWM
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz ~ 1MHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 16V, 4.5V ~ 5.5V
Supplier Device Package: 24-QFN (4x4)
Synchronous Rectifier: No
Control Features: Enable, Power Good
Serial Interfaces: I²C, PMBus, SMBus
Output Phases: 1
Clock Sync: Yes
Number of Outputs: 1
товару немає в наявності
В кошику
од. на суму грн.
| M3016316035NX0IBCY |
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Виробник: Renesas Electronics Corporation
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4161.93 грн |
| 10+ | 3700.15 грн |
| 25+ | 3579.60 грн |
| 50+ | 3275.02 грн |
| M3016316045NX0IBCY |
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Виробник: Renesas Electronics Corporation
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
Description: IC RAM 16MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Technology: MRAM (Magnetoresistive RAM)
Memory Format: RAM
Supplier Device Package: 48-FBGA (10x10)
Part Status: Active
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
на замовлення 121 шт:
термін постачання 21-31 дні (днів)
| RV1S2211ACCSP-10YV#SC0 |
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Виробник: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 40mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 40V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 40mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 40V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 422 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.66 грн |
| 20+ | 85.20 грн |
| 100+ | 63.05 грн |
| RV1S2285ACCSP-10YC#SC0 |
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Виробник: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 5292 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.28 грн |
| 10+ | 88.18 грн |
| 100+ | 67.87 грн |
| 500+ | 57.57 грн |
| 1000+ | 49.47 грн |
| 2000+ | 46.78 грн |
| 5000+ | 44.95 грн |
| RV1S2285ACCSP-10YV#SC0 |
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Виробник: Renesas Electronics Corporation
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Description: OPTO COUPLER IN 4PIN SSOP
Packaging: Strip
Package / Case: 4-SOP (0.295", 7.50mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 115°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: AC, DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-LSSOP
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 4µs, 5µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.54 грн |
| F2915EVBI |
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Виробник: Renesas Electronics Corporation
Description: RF
Packaging: Box
For Use With/Related Products: F2915
Frequency: 50MHz ~ 8GHz
Type: Switch, SP5T
Supplied Contents: Board(s)
Description: RF
Packaging: Box
For Use With/Related Products: F2915
Frequency: 50MHz ~ 8GHz
Type: Switch, SP5T
Supplied Contents: Board(s)
товару немає в наявності
В кошику
од. на суму грн.
| 2SK2225-80-E#T2 |
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Виробник: Renesas Electronics Corporation
Description: ABU / MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
Description: ABU / MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 1A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3PFM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1500 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 10 V
на замовлення 396 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1483.06 грн |
| 25+ | 914.55 грн |
| 50+ | 848.35 грн |
| 100+ | 743.93 грн |
| ATXP064B-CCUE-T |
Виробник: Renesas Electronics Corporation
Description: IC FLASH 64MBIT SPI/OCTAL 24CBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-CBGA (6x8)
Write Cycle Time - Word, Page: 25µs, 12ms
Memory Interface: SPI - Octal I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/OCTAL 24CBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-CBGA (6x8)
Write Cycle Time - Word, Page: 25µs, 12ms
Memory Interface: SPI - Octal I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2000 шт
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| AT25SL128A-UIUE-T |
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Виробник: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| AT25SL128A-UIUE-T |
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Виробник: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Cut Tape (CT)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI 21WLCSP
Packaging: Cut Tape (CT)
Package / Case: 21-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 21-WLCSP (3.02x3.29)
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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| AT25SL128A-SUE-T |
Виробник: Renesas Electronics Corporation
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Verified
Description: IC FLASH 128MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Verified
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
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| AT25SL641-SUE-T |
Виробник: Renesas Electronics Corporation
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 150µs, 5ms
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| 2SK3814-Z-E1-AZ |
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Виробник: Renesas Electronics Corporation
Description: MP-3 AL
Packaging: Strip
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 84W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
Description: MP-3 AL
Packaging: Strip
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 30A, 10V
Power Dissipation (Max): 84W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-252 (MP-3Z)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5450 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 180.92 грн |
| 10+ | 144.57 грн |
| 100+ | 115.04 грн |
| 500+ | 91.35 грн |
| 1000+ | 77.51 грн |
| 2000+ | 73.63 грн |
| RAA2900014H12HPD#GB2 |
Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
товару немає в наявності
Мінімальне замовлення: 1750 шт
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| RAA2900014H12HPD#GB2 |
Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
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| RAA2900024H12HPD#GB1 |
Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| RAA2900034H12HPD#GB1 |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
товару немає в наявності
Мінімальне замовлення: 1300 шт
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| RAA2900034H12HPD#GB1 |
![]() |
Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: 9V ~ 28V
Applications: General Purpose
Current - Supply: 708µA
Supplier Device Package: TO-252 (MP-3ZP)
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| UPD166031AT1U(1)-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
товару немає в наявності
Мінімальне замовлення: 1250 шт
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| UPD166031AT1U(1)-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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| UPD166032T1U(1)-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
товару немає в наявності
Мінімальне замовлення: 1300 шт
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| UPD166032T1U(1)-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Description: MP-3ZK
Packaging: Cut Tape (CT)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
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| UPD166033T1U(1)-E1-AY |
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Виробник: Renesas Electronics Corporation
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
Description: MP-3ZK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-7, DPak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 28V
Applications: General Purpose
Current - Supply: 2.2mA
Supplier Device Package: TO-252-7
товару немає в наявності
Мінімальне замовлення: 1150 шт
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од. на суму грн.




















