Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (97632) > Сторінка 1610 з 1628
| Фото | Назва | Виробник | Інформація |
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DTA124XKAT146 | ROHM SEMICONDUCTOR |
 Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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| DTA124XMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
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| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: UMT3 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: SMD Gate charge: 2.2nC Kind of package: reel; tape Kind of channel: enhanced |
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| RD3G01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W Power dissipation: 25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 19.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -30A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -15A On-state resistance: 49mΩ Type of transistor: P-MOSFET |
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| RD3G03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 38nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -35A On-state resistance: 24mΩ Type of transistor: P-MOSFET |
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| RD3G07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -40V Drain current: -70A On-state resistance: 8.7mΩ Type of transistor: P-MOSFET |
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| RD3L01BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W Power dissipation: 26W Polarisation: unipolar Kind of package: reel; tape Gate charge: 15.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -10A On-state resistance: 93mΩ Type of transistor: P-MOSFET |
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| RD3L03BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W Power dissipation: 56W Polarisation: unipolar Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -70A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -35A On-state resistance: 46mΩ Type of transistor: P-MOSFET |
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| RD3L07BATTL1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W Power dissipation: 101W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -140A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -60V Drain current: -70A On-state resistance: 14.1mΩ Type of transistor: P-MOSFET |
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| RJ1G12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 165nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 40V Drain current: 120A On-state resistance: 2.08mΩ Type of transistor: N-MOSFET |
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| RJ1L12BGNTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 192W Polarisation: unipolar Gate charge: 175nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 60V Drain current: 120A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET |
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| RJ1P12BBDTLL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK Mounting: SMD Kind of package: reel; tape Power dissipation: 178W Polarisation: unipolar Gate charge: 80nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Case: D2PAK Drain-source voltage: 100V Drain current: 120A On-state resistance: 7.8mΩ Type of transistor: N-MOSFET |
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| EM6J1T2R | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: 0.2A Pulsed drain current: -0.8A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 9.6Ω Mounting: SMD Gate charge: 1.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| UM6J1NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -0.2A Pulsed drain current: -400mA Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 2.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| US6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -1.3A Pulsed drain current: -5.2A Power dissipation: 1W Case: TUMT6 Gate-source voltage: ±10V On-state resistance: 1.06Ω Mounting: SMD Gate charge: 2.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| RCJ120N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain-source voltage: 200V Drain current: 12A On-state resistance: 0.79Ω Type of transistor: N-MOSFET Power dissipation: 52W Polarisation: unipolar Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 48A |
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| RCJ160N20TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 16A Pulsed drain current: 64A Power dissipation: 85W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 410mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhanced |
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| RSJ151P10TL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Pulsed drain current: -30A Power dissipation: 50W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.22Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced |
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KDZVTR4.7B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA Mounting: SMD Leakage current: 20µA Power dissipation: 1W Kind of package: reel; tape Type of diode: Zener Case: SOD123F Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 4.7V |
на замовлення 4360 шт: термін постачання 21-30 дні (днів) |
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| RF2001NS2DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS2DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 20A Reverse recovery time: 30ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 0.93V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RF2001NS3DTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 350V Load current: 20A Reverse recovery time: 25ns Semiconductor structure: common cathode; double Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 100A Kind of package: reel; tape |
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| RCJ510N25TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK Mounting: SMD Case: D2PAK Kind of package: reel; tape Pulsed drain current: 160A Drain-source voltage: 250V Drain current: 51A On-state resistance: 155mΩ Type of transistor: N-MOSFET Power dissipation: 304W Polarisation: unipolar Gate charge: 0.12µC Kind of channel: enhanced Gate-source voltage: ±30V |
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Transil diodes - arrays Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23 Semiconductor structure: common anode; double Leakage current: 50nA Peak pulse power dissipation: 40W Max. off-state voltage: 13V Max. forward impulse current: 1.7A Breakdown voltage: 16V |
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1SS356VMTE-17 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 35V Load current: 0.1A Semiconductor structure: single diode Case: SC90A; SOD323F Max. forward voltage: 1V Kind of package: reel; tape |
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1SS400CMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Case: SOD923 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 90V Reverse recovery time: 4ns Max. forward impulse current: 0.5A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 225mA Type of diode: switching |
на замовлення 4360 шт: термін постачання 21-30 дні (днів) |
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| 1SS400CSFHT2RA | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A Case: SOD923 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 90V Reverse recovery time: 4ns Max. forward impulse current: 0.5A Load current: 0.1A Max. forward voltage: 1.2V Max. load current: 225mA Type of diode: switching |
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1SS400SMFHT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Semiconductor structure: single diode Max. off-state voltage: 90V Max. forward impulse current: 0.5A Case: SC79; SOD523 Mounting: SMD Kind of package: reel; tape Load current: 0.1A Max. load current: 225mA Max. forward voltage: 1.2V Reverse recovery time: 4ns Type of diode: switching |
на замовлення 5120 шт: термін постачання 21-30 дні (днів) |
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1SS400SMT2R | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V Semiconductor structure: single diode Max. off-state voltage: 90V Max. forward impulse current: 0.5A Case: SC79; SOD523 Mounting: SMD Features of semiconductor devices: fast switching Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 1.2V Reverse recovery time: 4ns Leakage current: 0.1µA Type of diode: switching Capacitance: 3pF |
на замовлення 7760 шт: термін постачання 21-30 дні (днів) |
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2SA1037AKT146Q | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 120...270 Type of transistor: PNP |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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2SA1037AKT146R | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Polarisation: bipolar Mounting: SMD Frequency: 140MHz Power dissipation: 0.2W Collector current: 0.15A Kind of package: reel; tape Collector-emitter voltage: 50V Case: SC59; SOT346 Current gain: 180...390 Type of transistor: PNP |
на замовлення 2980 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 2360 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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2SC2412KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
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UMZ1NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 150mW Case: SC88; SOT363 Current gain: 120...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 180MHz |
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| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω Gate-source voltage: ±12V |
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KDZLVTFTR100 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA Power dissipation: 1W Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 5µA Case: SOD123F Zener voltage: 100V Type of diode: Zener Mounting: SMD |
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| RCX450N20 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 45A Pulsed drain current: 180A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
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SML-010MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW Power: 70mW Case: 1208 Mounting: SMD LED colour: green Type of diode: LED Wavelength: 570nm LED lens: transparent Luminosity: 5.6...25mcd LED current: 20mA Dimensions: 3x2x1.3mm Front: flat Operating voltage: 2.2...2.8V |
на замовлення 3102 шт: термін постачання 21-30 дні (днів) |
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SML-010YTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW Power: 70mW Case: 1208 Mounting: SMD LED colour: yellow Type of diode: LED Wavelength: 585nm LED lens: transparent Luminosity: 2.2...6.3mcd LED current: 20mA Dimensions: 3x2x1.3mm Front: flat Operating voltage: 2.1...2.8V |
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| RSM002N06T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 250mA Pulsed drain current: 1A Power dissipation: 150mW Case: VMT3 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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| RF05VAM1STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Mounting: SMD Max. forward impulse current: 6A Case: SOD323HE Kind of package: reel; tape Load current: 0.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 25ns Max. forward voltage: 0.98V Max. off-state voltage: 100V |
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| RF05VAM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
на замовлення 2860 шт: термін постачання 21-30 дні (днів) |
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| RF05VYM1SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
на замовлення 4340 шт: термін постачання 21-30 дні (днів) |
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| RF05VYM2SFHTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 0.5A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SOD323HE Max. forward voltage: 0.98V Max. forward impulse current: 6A Kind of package: reel; tape |
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| RSX205LAM30TR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.49V Case: SOD128 Kind of package: reel; tape Leakage current: 200µA Max. forward impulse current: 60A |
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| RQ6E045BNTCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6 Mounting: SMD Power dissipation: 1.25W Case: TSMT6 Kind of package: reel; tape Pulsed drain current: 18A Gate charge: 8.4nC Polarisation: unipolar Drain current: 4.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 49mΩ Gate-source voltage: ±20V |
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UMB10NTN | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
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UMH10NTN | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Mounting: SMD Case: SC88; SOT363 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 150mW Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 80 Kind of package: reel; tape Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A |
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UMN10NTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A Power dissipation: 0.2W Case: SOT363 Mounting: SMD Kind of package: reel; tape Semiconductor structure: triple independent Max. off-state voltage: 80V Reverse recovery time: 4ns Load current: 0.1A Max. forward voltage: 1.2V Max. forward impulse current: 4A Max. load current: 0.3A Type of diode: switching |
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| R6007END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO252 On-state resistance: 1.2Ω |
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| R6007ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: D2PAK On-state resistance: 1.2Ω |
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| R6007JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A |
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| R6007JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK Type of transistor: N-MOSFET Mounting: SMD Case: D2PAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A |
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| RUR040N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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| RUR040N02TL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced |
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RB531SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.35V Case: SC79; SOD523 Kind of package: reel; tape Leakage current: 10µA Max. forward impulse current: 1A |
товар відсутній |
| DTA124XKAT146 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| DTA124XMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
товар відсутній
| RHU002N06FRAT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: UMT3
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RD3G01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -15A; Idm: -30A; 25W
Power dissipation: 25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -30A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -15A
On-state resistance: 49mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -35A
On-state resistance: 24mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3G07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -40V
Drain current: -70A
On-state resistance: 8.7mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L01BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -10A; Idm: -20A; 26W
Power dissipation: 26W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15.2nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -20A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -10A
On-state resistance: 93mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L03BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -35A; Idm: -70A; 56W
Power dissipation: 56W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 37nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -70A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -35A
On-state resistance: 46mΩ
Type of transistor: P-MOSFET
товар відсутній
| RD3L07BATTL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -70A; Idm: -140A; 101W
Power dissipation: 101W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -140A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -60V
Drain current: -70A
On-state resistance: 14.1mΩ
Type of transistor: P-MOSFET
товар відсутній
| RJ1G12BGNTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 165nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 40V
Drain current: 120A
On-state resistance: 2.08mΩ
Type of transistor: N-MOSFET
товар відсутній
| RJ1L12BGNTLL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 240A; 192W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 192W
Polarisation: unipolar
Gate charge: 175nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 60V
Drain current: 120A
On-state resistance: 4.1mΩ
Type of transistor: N-MOSFET
товар відсутній
| RJ1P12BBDTLL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; Idm: 240A; 178W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 178W
Polarisation: unipolar
Gate charge: 80nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Case: D2PAK
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
товар відсутній
| EM6J1T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; 200mA; Idm: -0.8A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: 0.2A
Pulsed drain current: -0.8A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 9.6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS6J1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| UM6J1NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -200mA; Idm: -0.4A; 150mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -0.2A
Pulsed drain current: -400mA
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 2.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| US6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -1.3A; Idm: -5.2A; 1W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -1.3A
Pulsed drain current: -5.2A
Power dissipation: 1W
Case: TUMT6
Gate-source voltage: ±10V
On-state resistance: 1.06Ω
Mounting: SMD
Gate charge: 2.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| RCJ120N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 48A; 52W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 12A
On-state resistance: 0.79Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Gate charge: 15nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 48A
товар відсутній
| RCJ160N20TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 85W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 85W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 410mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RSJ151P10TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| KDZVTR4.7B |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 4.7V; SMD; reel,tape; SOD123F; single diode; 20uA
Mounting: SMD
Leakage current: 20µA
Power dissipation: 1W
Kind of package: reel; tape
Type of diode: Zener
Case: SOD123F
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 4.7V
на замовлення 4360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 10.78 грн |
| 45+ | 8.14 грн |
| 100+ | 7.23 грн |
| 130+ | 6.24 грн |
| 360+ | 5.9 грн |
| RF2001NS2DFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS2DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 20A; 30ns; D2PAK; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Reverse recovery time: 30ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 0.93V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS3DFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RF2001NS3DTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 350V; 20A; 25ns; D2PAK; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 350V
Load current: 20A
Reverse recovery time: 25ns
Semiconductor structure: common cathode; double
Case: D2PAK
Max. forward voltage: 1.3V
Max. forward impulse current: 100A
Kind of package: reel; tape
товар відсутній
| RCJ510N25TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 51A; Idm: 160A; 304W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel; tape
Pulsed drain current: 160A
Drain-source voltage: 250V
Drain current: 51A
On-state resistance: 155mΩ
Type of transistor: N-MOSFET
Power dissipation: 304W
Polarisation: unipolar
Gate charge: 0.12µC
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| MMBZ16VALFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
Category: Transil diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: common anode; double
Leakage current: 50nA
Peak pulse power dissipation: 40W
Max. off-state voltage: 13V
Max. forward impulse current: 1.7A
Breakdown voltage: 16V
товар відсутній
| 1SS356VMTE-17 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 35V; 0.1A; SC90A,SOD323F; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC90A; SOD323F
Max. forward voltage: 1V
Kind of package: reel; tape
товар відсутній
| 1SS400CMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 90V
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 225mA
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 90V
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 225mA
Type of diode: switching
на замовлення 4360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.55 грн |
| 400+ | 2.07 грн |
| 1080+ | 1.95 грн |
| 1SS400CSFHT2RA |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 90V
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 225mA
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SOD923; Ufmax: 1.2V; Ifsm: 0.5A
Case: SOD923
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 90V
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Load current: 0.1A
Max. forward voltage: 1.2V
Max. load current: 225mA
Type of diode: switching
товар відсутній
| 1SS400SMFHT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Semiconductor structure: single diode
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Case: SC79; SOD523
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. load current: 225mA
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Semiconductor structure: single diode
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Case: SC79; SOD523
Mounting: SMD
Kind of package: reel; tape
Load current: 0.1A
Max. load current: 225mA
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Type of diode: switching
на замовлення 5120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 140+ | 2.55 грн |
| 380+ | 2.13 грн |
| 1040+ | 2.02 грн |
| 1SS400SMT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Semiconductor structure: single diode
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Case: SC79; SOD523
Mounting: SMD
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Leakage current: 0.1µA
Type of diode: switching
Capacitance: 3pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 0.1A; 4ns; SC79,SOD523; Ufmax: 1.2V
Semiconductor structure: single diode
Max. off-state voltage: 90V
Max. forward impulse current: 0.5A
Case: SC79; SOD523
Mounting: SMD
Features of semiconductor devices: fast switching
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Leakage current: 0.1µA
Type of diode: switching
Capacitance: 3pF
на замовлення 7760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.18 грн |
| 140+ | 2.62 грн |
| 420+ | 2 грн |
| 1120+ | 1.89 грн |
| 2SA1037AKT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 120...270
Type of transistor: PNP
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.26 грн |
| 140+ | 2.75 грн |
| 400+ | 2.11 грн |
| 1060+ | 2 грн |
| 2SA1037AKT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Polarisation: bipolar
Mounting: SMD
Frequency: 140MHz
Power dissipation: 0.2W
Collector current: 0.15A
Kind of package: reel; tape
Collector-emitter voltage: 50V
Case: SC59; SOT346
Current gain: 180...390
Type of transistor: PNP
на замовлення 2980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.26 грн |
| 140+ | 2.75 грн |
| 400+ | 2.11 грн |
| 1060+ | 1.99 грн |
| 2SC2412KT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 2360 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.26 грн |
| 140+ | 2.75 грн |
| 380+ | 2.23 грн |
| 1000+ | 2.11 грн |
| 2SC2412KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.26 грн |
| 140+ | 2.75 грн |
| 360+ | 2.27 грн |
| 2SC2412KT146S |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
товар відсутній
| UMZ1NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 50V; 0.15A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 150mW
Case: SC88; SOT363
Current gain: 120...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 180MHz
товар відсутній
| RJU002N06FRAT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Gate-source voltage: ±12V
товар відсутній
| KDZLVTFTR100 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 100V; SMD; reel,tape; SOD123F; single diode; 5uA
Power dissipation: 1W
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 5µA
Case: SOD123F
Zener voltage: 100V
Type of diode: Zener
Mounting: SMD
товар відсутній
| RCX450N20 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 45A; Idm: 180A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SML-010MTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.2...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; green; 5.6÷25mcd; 3x2x1.3mm; 2.2÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: green
Type of diode: LED
Wavelength: 570nm
LED lens: transparent
Luminosity: 5.6...25mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.2...2.8V
на замовлення 3102 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 28.46 грн |
| 20+ | 17.46 грн |
| 50+ | 13.63 грн |
| 110+ | 7.37 грн |
| 301+ | 6.95 грн |
| SML-010YTT86 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
Category: SMD colour LEDs
Description: LED; SMD; 1208; yellow; 2.2÷6.3mcd; 3x2x1.3mm; 2.1÷2.8V; 20mA; 70mW
Power: 70mW
Case: 1208
Mounting: SMD
LED colour: yellow
Type of diode: LED
Wavelength: 585nm
LED lens: transparent
Luminosity: 2.2...6.3mcd
LED current: 20mA
Dimensions: 3x2x1.3mm
Front: flat
Operating voltage: 2.1...2.8V
товар відсутній
| RSM002N06T2L |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 250mA
Pulsed drain current: 1A
Power dissipation: 150mW
Case: VMT3
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RF05VAM1STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Mounting: SMD
Max. forward impulse current: 6A
Case: SOD323HE
Kind of package: reel; tape
Load current: 0.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward voltage: 0.98V
Max. off-state voltage: 100V
товар відсутній
| RF05VAM2STR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
на замовлення 2860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 5.81 грн |
| 190+ | 4.37 грн |
| 500+ | 4.13 грн |
| RF05VYM1SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
на замовлення 4340 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.04 грн |
| 200+ | 3.86 грн |
| 550+ | 3.64 грн |
| RF05VYM2SFHTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
товар відсутній
| RSX205LAM30TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; SOD128; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Case: SOD128
Kind of package: reel; tape
Leakage current: 200µA
Max. forward impulse current: 60A
товар відсутній
| RQ6E045BNTCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; Idm: 18A; 1.25W; TSMT6
Mounting: SMD
Power dissipation: 1.25W
Case: TSMT6
Kind of package: reel; tape
Pulsed drain current: 18A
Gate charge: 8.4nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 49mΩ
Gate-source voltage: ±20V
товар відсутній
| UMB10NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
товар відсутній
| UMH10NTN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Mounting: SMD
Case: SC88; SOT363
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 150mW
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Current gain: 80
Kind of package: reel; tape
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Collector current: 0.1A
товар відсутній
| UMN10NTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Load current: 0.1A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. load current: 0.3A
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT363; Ufmax: 1.2V; Ifsm: 4A
Power dissipation: 0.2W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: triple independent
Max. off-state voltage: 80V
Reverse recovery time: 4ns
Load current: 0.1A
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Max. load current: 0.3A
Type of diode: switching
товар відсутній
| R6007END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
товар відсутній
| R6007ENJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
товар відсутній
| R6007JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
товар відсутній
| R6007JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
товар відсутній
| RUR040N02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RUR040N02TL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| RB531SM-30T2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SC79,SOD523; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Case: SC79; SOD523
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 1A
товар відсутній