Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13584) > Сторінка 138 з 227
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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2SA1761,T6F(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SA1761,T6F(M | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 3A TO-92MODPower - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 3 A Supplier Device Package: TO-92MOD Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| TLE4274V50 | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR LDO 5V TO220 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TPN11006PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 26A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 17232 шт: термін постачання 21-31 дні (днів) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPN4R806PL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 72A 8TSONPackaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 630mW (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V |
на замовлення 9228 шт: термін постачання 21-31 дні (днів) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TPN7R504PL,LQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 38A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance (3.1x3.1) Vgs(th) (Max) @ Id: 2.4V @ 200µA Power Dissipation (Max): 610mW (Ta), 61W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4400 шт: термін постачання 21-31 дні (днів) |
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TK040Z65Z,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 57A TO247-4LPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247-4L(T) Vgs(th) (Max) @ Id: 4V @ 2.85mA Power Dissipation (Max): 360W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V Current - Continuous Drain (Id) @ 25°C: 57A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-4 |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TKR74F04PB,LXGQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 250A TO220SMPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Ta) Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TO-220SM(W) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2763 шт: термін постачання 21-31 дні (днів) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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TLP170AM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 700 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 92019 шт: термін постачання 21-31 дні (днів) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Tape & Reel (TR) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLP170GM(TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350VPackaging: Cut Tape (CT) Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.27VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 110 mA Supplier Device Package: 6-SOP (2.54mm) Part Status: Active Voltage - Load: 0 V ~ 350 V On-State Resistance (Max): 50 Ohms Operating Temperature: -40°C ~ 85°C Approval Agency: cUL, UL, VDE Relay Type: Photo-Coupled Relay (Photorelay) |
на замовлення 10080 шт: термін постачання 21-31 дні (днів) |
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TLP170GM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 110MA 0-350V Approval Agency: cUL, UL, VDE Operating Temperature: -40°C ~ 85°C On-State Resistance (Max): 500 Ohms Voltage - Load: 0 V ~ 350 V Supplier Device Package: 6-SMD Load Current: 110 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLP170AM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VRelay Type: Photo-Coupled Relay (Photorelay) Approval Agency: cUL, UL, VDE Operating Temperature: -55°C ~ 125°C On-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 6-SMD Load Current: 700 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Tape & Reel (TR) |
на замовлення 72000 шт: термін постачання 21-31 дні (днів) |
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TLP170AM(V4TPL,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 700MA 0-60VRelay Type: Photo-Coupled Relay (Photorelay) On-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 6-SMD Load Current: 700 mA Termination Style: Gull Wing Circuit: SPST-NO (1 Form A) Voltage - Input: 1.27VDC Approval Agency: cUL, UL, VDE Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Output Type: AC, DC Package / Case: 6-SMD, Gull Wing Packaging: Cut Tape (CT) |
на замовлення 73924 шт: термін постачання 21-31 дні (днів) |
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| TK25V60X,LQ | Toshiba Semiconductor and Storage |
Description: X35 PB-F POWER MOSFET TRANSISTOR |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
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2SC5198-O(S1,E | Toshiba Semiconductor and Storage |
Description: TRANS NPN 140V 10A TO-3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A Current - Collector Cutoff (Max): 5µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V Frequency - Transition: 30MHz Supplier Device Package: TO-3P(N) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TB2941HQ | Toshiba Semiconductor and Storage |
Description: IC AMP CLASS AB QUAD 49W 25HZIPPart Status: Active Supplier Device Package: 25-HZIP Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm Voltage - Supply: 6V ~ 18V Operating Temperature: -40°C ~ 85°C (TA) Type: Class AB Mounting Type: Through Hole Output Type: 4-Channel (Quad) Package / Case: 25-SIP Formed Leads Features: Mute, Short-Circuit and Thermal Protection, Shutdown Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TK560P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 7A DPAKDrive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TK560P60Y,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 600V 7A DPAKInput Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 240µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V |
на замовлення 5557 шт: термін постачання 21-31 дні (днів) |
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| CMS30I40A(TE12L,QM | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 40V 3A M-FLAT |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
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TLP2105(TP,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SOCurrent - Output / Channel: 25 mA Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Common Mode Transient Immunity (Min): 10kV/µs Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 8-SO Inputs - Side 1/Side 2: 2/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 5Mbps Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 4.5V ~ 20V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Push-Pull, Totem Pole Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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TB67H451FNG,EL | Toshiba Semiconductor and Storage |
Description: 50V/3A BRUSHED MOTOR DRIVERPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 3.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - AC, DC: Brushed DC Part Status: Not For New Designs |
на замовлення 10500 шт: термін постачання 21-31 дні (днів) |
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TB67H451FNG,EL | Toshiba Semiconductor and Storage |
Description: 50V/3A BRUSHED MOTOR DRIVERPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver Current - Output: 3.5A Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Half Bridge Voltage - Supply: 2V ~ 5.5V Applications: General Purpose Voltage - Load: 4.5V ~ 44V Supplier Device Package: 8-HSOP Motor Type - AC, DC: Brushed DC Part Status: Not For New Designs |
на замовлення 13567 шт: термін постачання 21-31 дні (днів) |
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| TLP160G(OMT7-TPR,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(OMT5TRUC,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(IFT7,U,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(TPL,U,C,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(T5-TPL,U,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(TPL,U,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(TEE-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(SIEMTPRS,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(V4T7TLUC,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(V4DMT7TR,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(DT-TPL,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(DMT7-TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(IFT7,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(V4T7TRUC,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(DMT7-TPR,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(IFT5,U,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(T7-TPR,U,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(V4OM5TRUCF | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(MBS-TR,U,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(DMT7-TPL,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(V4T7,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(T5-TPR,U,F | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(T7-TPL,U,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(T7TL,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160G(OMT7,F) | Toshiba Semiconductor and Storage | Description: PHOTOCOUPLER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TLP160J(T7TR,U,C,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
2SA1013-O,T6MIBF(J | Toshiba Semiconductor and Storage |
Description: TRANS PNP 160V 1A TO-92LPackaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V Frequency - Transition: 50MHz Supplier Device Package: TO-92L Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLP3412R(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.108", 2.75mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.8VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 400 mA Supplier Device Package: 4-VSONR (1.45x2.75) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
|
TLP3412R(TP,F | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.108", 2.75mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.8VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 400 mA Supplier Device Package: 4-VSONR (1.45x2.75) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
TLP3412SRHA(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 400 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLP3412SRHA(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 400MA 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.5VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 400 mA Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 1.5 Ohms |
на замовлення 17589 шт: термін постачання 21-31 дні (днів) |
|
| 2SA1761,T6F(J |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1761,T6F(M |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Description: TRANS PNP 50V 3A TO-92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 75mA, 1.5A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TPN11006PL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.17 грн |
| 9000+ | 15.42 грн |
| TPN11006PL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 26A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1625 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 11.4mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 17232 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.54 грн |
| 10+ | 44.44 грн |
| 50+ | 32.80 грн |
| 100+ | 27.24 грн |
| 500+ | 20.99 грн |
| TPN4R806PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 72A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 23.07 грн |
| TPN4R806PL,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
Description: MOSFET N-CH 60V 72A 8TSON
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 30 V
на замовлення 9228 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.74 грн |
| 10+ | 58.64 грн |
| 100+ | 38.89 грн |
| 500+ | 28.54 грн |
| 1000+ | 25.98 грн |
| 2000+ | 24.53 грн |
| TPN7R504PL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 18.22 грн |
| TPN7R504PL,LQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 38A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Power Dissipation (Max): 610mW (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 83.26 грн |
| 10+ | 50.47 грн |
| 100+ | 33.15 грн |
| 500+ | 24.11 грн |
| 1000+ | 21.85 грн |
| TK040Z65Z,S1F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
Description: MOSFET N-CH 650V 57A TO247-4L
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247-4L(T)
Vgs(th) (Max) @ Id: 4V @ 2.85mA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 28.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-4
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 985.61 грн |
| TKR74F04PB,LXGQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 149.21 грн |
| TKR74F04PB,LXGQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 250A TO220SM
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
Rds On (Max) @ Id, Vgs: 0.74mOhm @ 125A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-220SM(W)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2763 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.01 грн |
| 10+ | 258.39 грн |
| 100+ | 185.02 грн |
| 500+ | 156.64 грн |
| TLP170AM(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 68.01 грн |
| 6000+ | 63.24 грн |
| 9000+ | 61.96 грн |
| TLP170AM(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 700MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 700 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 92019 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 87.28 грн |
| 25+ | 83.32 грн |
| 50+ | 75.53 грн |
| 100+ | 72.94 грн |
| 250+ | 69.65 грн |
| 500+ | 66.16 грн |
| 1000+ | 63.89 грн |
| TLP170GM(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Tape & Reel (TR)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 68.01 грн |
| 6000+ | 63.24 грн |
| 9000+ | 61.96 грн |
| TLP170GM(TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Description: SSR RELAY SPST-NO 110MA 0-350V
Packaging: Cut Tape (CT)
Package / Case: 6-SOP (0.179", 4.55mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 110 mA
Supplier Device Package: 6-SOP (2.54mm)
Part Status: Active
Voltage - Load: 0 V ~ 350 V
On-State Resistance (Max): 50 Ohms
Operating Temperature: -40°C ~ 85°C
Approval Agency: cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 10080 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 87.28 грн |
| 25+ | 83.32 грн |
| 50+ | 75.53 грн |
| 100+ | 72.94 грн |
| 250+ | 69.65 грн |
| 500+ | 66.16 грн |
| 1000+ | 63.89 грн |
| TLP170GM(V4TPL,E |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 110MA 0-350V
Approval Agency: cUL, UL, VDE
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 500 Ohms
Voltage - Load: 0 V ~ 350 V
Supplier Device Package: 6-SMD
Load Current: 110 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLP170AM(V4TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
на замовлення 72000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 68.01 грн |
| 6000+ | 63.24 грн |
| 9000+ | 61.96 грн |
| TLP170AM(V4TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: SSR RELAY SPST-NO 700MA 0-60V
Relay Type: Photo-Coupled Relay (Photorelay)
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 6-SMD
Load Current: 700 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.27VDC
Approval Agency: cUL, UL, VDE
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 73924 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.29 грн |
| 10+ | 87.28 грн |
| 25+ | 83.32 грн |
| 50+ | 75.53 грн |
| 100+ | 72.94 грн |
| 250+ | 69.65 грн |
| 500+ | 66.16 грн |
| 1000+ | 63.89 грн |
| TK25V60X,LQ |
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Виробник: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Description: X35 PB-F POWER MOSFET TRANSISTOR
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 2SC5198-O(S1,E |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
Description: TRANS NPN 140V 10A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 700mA, 7A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P(N)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 100 W
товару немає в наявності
В кошику
од. на суму грн.
| TB2941HQ |
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Виробник: Toshiba Semiconductor and Storage
Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
Description: IC AMP CLASS AB QUAD 49W 25HZIP
Part Status: Active
Supplier Device Package: 25-HZIP
Max Output Power x Channels @ Load: 49W x 4 @ 4Ohm
Voltage - Supply: 6V ~ 18V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class AB
Mounting Type: Through Hole
Output Type: 4-Channel (Quad)
Package / Case: 25-SIP Formed Leads
Features: Mute, Short-Circuit and Thermal Protection, Shutdown
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| TK560P60Y,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Description: MOSFET N-CHANNEL 600V 7A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 39.96 грн |
| 4000+ | 36.09 грн |
| TK560P60Y,RQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Description: MOSFET N-CHANNEL 600V 7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
на замовлення 5557 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.97 грн |
| 10+ | 84.76 грн |
| 100+ | 57.27 грн |
| 500+ | 42.67 грн |
| 1000+ | 39.11 грн |
| CMS30I40A(TE12L,QM |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 3A M-FLAT
Description: DIODE SCHOTTKY 40V 3A M-FLAT
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLP2105(TP,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 2.5KV 2CH PUSH PULL 8-SO
Current - Output / Channel: 25 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Common Mode Transient Immunity (Min): 10kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SO
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 5Mbps
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TB67H451FNG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
на замовлення 10500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3500+ | 43.66 грн |
| 7000+ | 41.15 грн |
| 10500+ | 40.69 грн |
| TB67H451FNG,EL |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
Description: 50V/3A BRUSHED MOTOR DRIVER
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver
Current - Output: 3.5A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 2V ~ 5.5V
Applications: General Purpose
Voltage - Load: 4.5V ~ 44V
Supplier Device Package: 8-HSOP
Motor Type - AC, DC: Brushed DC
Part Status: Not For New Designs
на замовлення 13567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.39 грн |
| 10+ | 63.30 грн |
| 25+ | 57.33 грн |
| 100+ | 47.64 грн |
| 250+ | 44.70 грн |
| 500+ | 42.93 грн |
| 1000+ | 41.54 грн |
| TLP160J(OMT5TRUC,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160G(SIEMTPRS,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160J(V4T7TLUC,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160J(V4DMT7TR,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160J(V4T7TRUC,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160G(DMT7-TPR,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160G(T7-TPR,U,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160G(T5-TPR,U,F |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| TLP160G(OMT7,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Description: PHOTOCOUPLER
товару немає в наявності
В кошику
од. на суму грн.
| 2SA1013-O,T6MIBF(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 160V 1A TO-92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
Description: TRANS PNP 160V 1A TO-92L
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 200mA, 5V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92L
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 900 mW
товару немає в наявності
В кошику
од. на суму грн.
| TLP3412R(TP,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLP3412R(TP,F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.108", 2.75mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.8VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Supplier Device Package: 4-VSONR (1.45x2.75)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
товару немає в наявності
В кошику
од. на суму грн.
| TLP3412SRHA(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 295.91 грн |
| TLP3412SRHA(TP,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
Description: SSR RELAY SPST-NO 400MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.5VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 400 mA
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 1.5 Ohms
на замовлення 17589 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 438.49 грн |
| 10+ | 376.36 грн |
| 25+ | 359.42 грн |
| 50+ | 325.74 грн |
| 100+ | 314.57 грн |
| 250+ | 300.37 грн |
| 500+ | 285.30 грн |
| 1000+ | 275.49 грн |
















