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TLP3451(TP,F TLP3451(TP,F Toshiba Semiconductor and Storage docget.jsp?did=29659&prodName=TLP3451 Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 14177 шт:
термін постачання 21-31 дні (днів)
2+309.19 грн
10+220.21 грн
100+174.41 грн
500+144.87 грн
1000+138.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TLP3440(TP,F TLP3440(TP,F Toshiba Semiconductor and Storage docget.jsp?did=15250&prodName=TLP3440 Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+129.49 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLP3440(TP,F TLP3440(TP,F Toshiba Semiconductor and Storage docget.jsp?did=15250&prodName=TLP3440 Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 5162 шт:
термін постачання 21-31 дні (днів)
2+279.74 грн
10+198.49 грн
100+156.62 грн
500+129.78 грн
1000+124.18 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TB62785NG TB62785NG Toshiba Semiconductor and Storage docget.jsp?did=28829&prodName=TB62785NG Description: IC LED DRIVER LINEAR 50MA 24SDIP
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 8
Mounting Type: Through Hole
Voltage - Output: 17V
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 24-SDIP
Topology: Shift Register
Internal Switch(s): Yes
товару немає в наявності
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7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
7UL1G08FS,LF 7UL1G08FS,LF Toshiba Semiconductor and Storage Description: IC GATE AND 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
на замовлення 6297 шт:
термін постачання 21-31 дні (днів)
10+31.77 грн
13+23.13 грн
25+20.83 грн
100+13.51 грн
250+11.38 грн
500+9.25 грн
1000+6.99 грн
2500+6.30 грн
5000+5.95 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS Description: IC GATE OR 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+6.10 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
7UL1G32FS,LF 7UL1G32FS,LF Toshiba Semiconductor and Storage 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS Description: IC GATE OR 1CH 2-INP FSV
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10+31.77 грн
13+23.13 грн
25+20.83 грн
100+13.51 грн
250+11.38 грн
500+9.25 грн
1000+6.99 грн
2500+6.30 грн
5000+5.95 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TCKE805NL,RF TCKE805NL,RF Toshiba Semiconductor and Storage docget.jsp?did=139443&prodName=TCKE805NL Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
3+105.39 грн
10+74.40 грн
25+67.55 грн
100+56.33 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage docget.jsp?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6K514NU,LF SSM6K514NU,LF Toshiba Semiconductor and Storage docget.jsp?did=53150&prodName=SSM6K514NU Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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2SC2229(TE6SAN1F,M 2SC2229(TE6SAN1F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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2SC2229-O(MIT1F,M) 2SC2229-O(MIT1F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(MITIF,M) 2SC2229-O(MITIF,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(SHP,F,M) 2SC2229-O(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(SHP1,F,M 2SC2229-O(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
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2SC2229-O(T6MIT1FM 2SC2229-O(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
товару немає в наявності
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2SC2229-O(T6SHP1FM 2SC2229-O(T6SHP1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
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2SC2229-O(TE6,F,M) 2SC2229-O(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
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2SC2229-Y(MIT,F,M) 2SC2229-Y(MIT,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(MIT1,F,M 2SC2229-Y(MIT1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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2SC2229-Y(SHP,F,M) 2SC2229-Y(SHP,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(SHP1,F,M 2SC2229-Y(SHP1,F,M Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
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2SC2229-Y(T6MIT1FM 2SC2229-Y(T6MIT1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(T6MITIFM 2SC2229-Y(T6MITIFM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(T6ONK1FM 2SC2229-Y(T6ONK1FM Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(TE6,F,M) 2SC2229-Y(TE6,F,M) Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y,F(J 2SC2229-Y,F(J Toshiba Semiconductor and Storage 2SC2229_2009-12-21.pdf Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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TRS24N65FB,S1Q TRS24N65FB,S1Q Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
1+764.06 грн
30+436.76 грн
В кошику  од. на суму  грн.
TRS24N65FB,S1F(S TRS24N65FB,S1F(S Toshiba Semiconductor and Storage TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
товару немає в наявності
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SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+9.73 грн
6000+8.54 грн
9000+8.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N40TU,LF SSM6N40TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11018&prodName=SSM6N40TU Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
на замовлення 13431 шт:
термін постачання 21-31 дні (днів)
8+42.62 грн
12+25.45 грн
100+16.26 грн
500+11.53 грн
1000+10.32 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
RFM01U7P(TE12L,F) RFM01U7P(TE12L,F) Toshiba Semiconductor and Storage RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P Description: RF MOSFET 7.2V PW-MINI
Current - Test: 100 mA
Voltage - Test: 7.2 V
Voltage - Rated: 20 V
Part Status: Not For New Designs
Supplier Device Package: PW-MINI
Technology: MOSFET (Metal Oxide)
Gain: 10.8dB
Power - Output: 1.2W
Configuration: N-Channel
Frequency: 520MHz
Mounting Type: Surface Mount
Current Rating (Amps): 1A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SC4935-Y,Q(J 2SC4935-Y,Q(J Toshiba Semiconductor and Storage 2SC4935_2010-12-21.pdf Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
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В кошику  од. на суму  грн.
TLP241A(F TLP241A(F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 4701 шт:
термін постачання 21-31 дні (днів)
3+129.41 грн
10+89.54 грн
100+68.13 грн
500+55.07 грн
1000+52.17 грн
2000+49.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TLP241A(LF1,F TLP241A(LF1,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
3+140.26 грн
10+96.63 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TLP241A(D4,F TLP241A(D4,F Toshiba Semiconductor and Storage TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
3+147.23 грн
10+101.86 грн
100+77.93 грн
500+63.26 грн
1000+60.04 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+125.68 грн
2000+113.66 грн
3000+112.41 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TK160F10N1,LXGQ TK160F10N1,LXGQ Toshiba Semiconductor and Storage Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf Description: MOSFET N-CH 100V 160A TO220SM
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
на замовлення 4332 шт:
термін постачання 21-31 дні (днів)
1+347.16 грн
10+221.10 грн
100+157.11 грн
500+129.13 грн
В кошику  од. на суму  грн.
2SB1457,T6TOTOF(J 2SB1457,T6TOTOF(J Toshiba Semiconductor and Storage 2SB1457_2009-12-21.pdf Description: TRANS PNP 100V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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TLP2630(TP1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLP2630(MAT,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
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TLP2630(LF1,F) Toshiba Semiconductor and Storage Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 23700 шт:
термін постачання 21-31 дні (днів)
3000+12.66 грн
6000+11.16 грн
9000+10.64 грн
15000+9.44 грн
21000+9.11 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N815R,LF SSM6N815R,LF Toshiba Semiconductor and Storage docget.jsp?did=58964&prodName=SSM6N815R Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 23976 шт:
термін постачання 21-31 дні (днів)
6+54.24 грн
10+32.24 грн
100+20.77 грн
500+14.84 грн
1000+13.34 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
TC7WZ08FK,LJ(CT TC7WZ08FK,LJ(CT Toshiba Semiconductor and Storage docget.jsp?did=54672&prodName=TC7WZ08FK Description: IC GATE AND 2CH 4-INP US8
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+3.87 грн
6000+3.60 грн
9000+3.54 грн
15000+3.26 грн
21000+3.22 грн
30000+3.18 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB3157CFU,LF(CT TC7SB3157CFU,LF(CT Toshiba Semiconductor and Storage TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
на замовлення 38631 шт:
термін постачання 21-31 дні (днів)
29+10.85 грн
45+6.72 грн
51+5.94 грн
100+4.71 грн
250+4.31 грн
500+4.06 грн
1000+3.80 грн
Мінімальне замовлення: 29 шт
В кошику  од. на суму  грн.
TRS12N65FB,S1Q TRS12N65FB,S1Q Toshiba Semiconductor and Storage docget.jsp?did=69233&prodName=TRS12N65FB Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
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TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
2500+179.07 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TK099V65Z,LQ TK099V65Z,LQ Toshiba Semiconductor and Storage TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
1+368.08 грн
10+297.36 грн
100+240.61 грн
500+200.72 грн
1000+171.86 грн
В кошику  од. на суму  грн.
TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TBD62781AFWG,EL TBD62781AFWG,EL Toshiba Semiconductor and Storage TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
2+237.90 грн
10+149.69 грн
100+104.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+91.86 грн
2000+82.67 грн
3000+79.73 грн
5000+74.27 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TBD62786AFWG,EL TBD62786AFWG,EL Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 6271 шт:
термін постачання 21-31 дні (днів)
2+265.02 грн
10+167.00 грн
100+116.77 грн
500+90.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TBD62786APG TBD62786APG Toshiba Semiconductor and Storage TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Voltage - Load: 0V ~ 50V
Input Type: Inverting
Rds On (Typ): 1.6Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Through Hole
Output Type: P-Channel
Package / Case: 18-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 18-DIP
Ratio - Input:Output: 1:1
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
2+258.82 грн
20+146.14 грн
100+115.12 грн
500+88.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.03 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SA2215,LF 2SA2215,LF Toshiba Semiconductor and Storage docget.jsp?did=22651&prodName=2SA2215 Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
на замовлення 5290 шт:
термін постачання 21-31 дні (днів)
8+44.17 грн
12+26.12 грн
100+16.71 грн
500+11.87 грн
1000+10.63 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
TA76432AS,T6F(J TA76432AS,T6F(J Toshiba Semiconductor and Storage TA76432A_Series_2011-09-29.pdf Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
TLP3451(TP,F docget.jsp?did=29659&prodName=TLP3451
TLP3451(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 15 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 14177 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+309.19 грн
10+220.21 грн
100+174.41 грн
500+144.87 грн
1000+138.75 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TLP3440(TP,F docget.jsp?did=15250&prodName=TLP3440
TLP3440(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+129.49 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TLP3440(TP,F docget.jsp?did=15250&prodName=TLP3440
TLP3440(TP,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 120MA 0-40V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.096", 2.45mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Termination Style: SMD (SMT) Tab
Load Current: 120 mA
Supplier Device Package: 4-VSON (1.45x2.45)
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 14 Ohms
Operating Temperature: -40°C ~ 110°C
Relay Type: Photo-Coupled Relay (Photorelay)
на замовлення 5162 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+279.74 грн
10+198.49 грн
100+156.62 грн
500+129.78 грн
1000+124.18 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TB62785NG docget.jsp?did=28829&prodName=TB62785NG
TB62785NG
Виробник: Toshiba Semiconductor and Storage
Description: IC LED DRIVER LINEAR 50MA 24SDIP
Current - Output / Channel: 50mA
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 8
Mounting Type: Through Hole
Voltage - Output: 17V
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 4.5V
Supplier Device Package: 24-SDIP
Topology: Shift Register
Internal Switch(s): Yes
товару немає в наявності
В кошику  од. на суму  грн.
7UL1G08FS,LF
7UL1G08FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
7UL1G08FS,LF
7UL1G08FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
на замовлення 6297 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+31.77 грн
13+23.13 грн
25+20.83 грн
100+13.51 грн
250+11.38 грн
500+9.25 грн
1000+6.99 грн
2500+6.30 грн
5000+5.95 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
7UL1G32FS,LF 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP FSV
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10000+6.10 грн
Мінімальне замовлення: 10000 шт
В кошику  од. на суму  грн.
7UL1G32FS,LF 7UL1G32FS_datasheet_en_20221004.pdf?did=60335&prodName=7UL1G32FS
7UL1G32FS,LF
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP FSV
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: SOT-953
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.6V, 30pF
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: fSV
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
10+31.77 грн
13+23.13 грн
25+20.83 грн
100+13.51 грн
250+11.38 грн
500+9.25 грн
1000+6.99 грн
2500+6.30 грн
5000+5.95 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
TCKE805NL,RF docget.jsp?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
TCKE805NL,RF docget.jsp?did=139443&prodName=TCKE805NL
TCKE805NL,RF
Виробник: Toshiba Semiconductor and Storage
Description: IC ELECTRONIC FUSE 10WSON
Part Status: Active
Supplier Device Package: 10-WSONB (3x3)
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Voltage - Input: 4.4V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 101 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+105.39 грн
10+74.40 грн
25+67.55 грн
100+56.33 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
SSM6K514NU,LF docget.jsp?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6K514NU,LF docget.jsp?did=53150&prodName=SSM6K514NU
SSM6K514NU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 12A 6UDFNB
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.4V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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2SC2229(TE6SAN1F,M 2SC2229_2009-12-21.pdf
2SC2229(TE6SAN1F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
товару немає в наявності
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2SC2229-O(MIT1F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MIT1F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
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2SC2229-O(MITIF,M) 2SC2229_2009-12-21.pdf
2SC2229-O(MITIF,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(SHP,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-O(SHP1,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-O(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6MIT1FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
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2SC2229-O(T6SHP1FM 2SC2229_2009-12-21.pdf
2SC2229-O(T6SHP1FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 800 mW
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2SC2229-O(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-O(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(MIT,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(MIT1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(MIT1,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92MOD
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
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2SC2229-Y(SHP,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(SHP1,F,M 2SC2229_2009-12-21.pdf
2SC2229-Y(SHP1,F,M
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO92MOD
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
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2SC2229-Y(T6MIT1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MIT1FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(T6MITIFM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6MITIFM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(T6ONK1FM 2SC2229_2009-12-21.pdf
2SC2229-Y(T6ONK1FM
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y(TE6,F,M) 2SC2229_2009-12-21.pdf
2SC2229-Y(TE6,F,M)
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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2SC2229-Y,F(J 2SC2229_2009-12-21.pdf
2SC2229-Y,F(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 150V 0.05A TO-92MOD
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92MOD
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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TRS24N65FB,S1Q TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+764.06 грн
30+436.76 грн
В кошику  од. на суму  грн.
TRS24N65FB,S1F(S TRS24N65FB_datasheet_en_20200703.pdf?did=69239&prodName=TRS24N65FB
TRS24N65FB,S1F(S
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 12A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+9.73 грн
6000+8.54 грн
9000+8.12 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N40TU,LF docget.jsp?did=11018&prodName=SSM6N40TU
SSM6N40TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
на замовлення 13431 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+42.62 грн
12+25.45 грн
100+16.26 грн
500+11.53 грн
1000+10.32 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
RFM01U7P(TE12L,F) RFM01U7P_datasheet_en_20140301.pdf?did=22464&prodName=RFM01U7P
RFM01U7P(TE12L,F)
Виробник: Toshiba Semiconductor and Storage
Description: RF MOSFET 7.2V PW-MINI
Current - Test: 100 mA
Voltage - Test: 7.2 V
Voltage - Rated: 20 V
Part Status: Not For New Designs
Supplier Device Package: PW-MINI
Technology: MOSFET (Metal Oxide)
Gain: 10.8dB
Power - Output: 1.2W
Configuration: N-Channel
Frequency: 520MHz
Mounting Type: Surface Mount
Current Rating (Amps): 1A
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
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2SC4935-Y,Q(J 2SC4935_2010-12-21.pdf
2SC4935-Y,Q(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 3A TO-220NIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220NIS
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 2 W
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TLP241A(F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 4701 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+129.41 грн
10+89.54 грн
100+68.13 грн
500+55.07 грн
1000+52.17 грн
2000+49.72 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TLP241A(LF1,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(LF1,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-SMD (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 4-SMD
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 52 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+140.26 грн
10+96.63 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TLP241A(D4,F TLP241A_datasheet_en_20230525.pdf?did=14237&prodName=TLP241A
TLP241A(D4,F
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.27VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 2 A
Approval Agency: CSA, cUL, UL, VDE
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 1271 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+147.23 грн
10+101.86 грн
100+77.93 грн
500+63.26 грн
1000+60.04 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+125.68 грн
2000+113.66 грн
3000+112.41 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TK160F10N1,LXGQ Automotive%20Verbiage%20for%20Distribution%20-TAEC%20Letterhead.pdf
TK160F10N1,LXGQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 160A TO220SM
Supplier Device Package: TO-220SM(W)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
на замовлення 4332 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+347.16 грн
10+221.10 грн
100+157.11 грн
500+129.13 грн
В кошику  од. на суму  грн.
2SB1457,T6TOTOF(J 2SB1457_2009-12-21.pdf
2SB1457,T6TOTOF(J
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 100V 2A TO92MOD
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-92MOD
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
товару немає в наявності
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TLP2630(TP1,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
TLP2630(MAT,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
TLP2630(LF1,F)
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Part Status: Obsolete
Packaging: Tube
товару немає в наявності
В кошику  од. на суму  грн.
SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 23700 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+12.66 грн
6000+11.16 грн
9000+10.64 грн
15000+9.44 грн
21000+9.11 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
SSM6N815R,LF docget.jsp?did=58964&prodName=SSM6N815R
SSM6N815R,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 100V 2A 6TSOPF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 103mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
на замовлення 23976 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
6+54.24 грн
10+32.24 грн
100+20.77 грн
500+14.84 грн
1000+13.34 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
TC7WZ08FK,LJ(CT docget.jsp?did=54672&prodName=TC7WZ08FK
TC7WZ08FK,LJ(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 4-INP US8
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+3.87 грн
6000+3.60 грн
9000+3.54 грн
15000+3.26 грн
21000+3.22 грн
30000+3.18 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TC7SB3157CFU,LF(CT TC7SB3157CFU_datasheet_en_20210331.pdf?did=2603&prodName=TC7SB3157CFU
TC7SB3157CFU,LF(CT
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: US6
на замовлення 38631 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
29+10.85 грн
45+6.72 грн
51+5.94 грн
100+4.71 грн
250+4.31 грн
500+4.06 грн
1000+3.80 грн
Мінімальне замовлення: 29 шт
В кошику  од. на суму  грн.
TRS12N65FB,S1Q docget.jsp?did=69233&prodName=TRS12N65FB
TRS12N65FB,S1Q
Виробник: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 6A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 6 A
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
товару немає в наявності
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TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+179.07 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TK099V65Z,LQ TK099V65Z_datasheet_en_20190927.pdf?did=65090&prodName=TK099V65Z
TK099V65Z,LQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 30A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.27mA
Supplier Device Package: 5-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 300 V
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+368.08 грн
10+297.36 грн
100+240.61 грн
500+200.72 грн
1000+171.86 грн
В кошику  од. на суму  грн.
TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TBD62781AFWG,EL TBD62781AFWG_datasheet_en_20170329.pdf?did=58397&prodName=TBD62781AFWG
TBD62781AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: TRANSISTOR ARRAY INTERFACE DRIVE
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+237.90 грн
10+149.69 грн
100+104.43 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1000+91.86 грн
2000+82.67 грн
3000+79.73 грн
5000+74.27 грн
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
TBD62786AFWG,EL TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786AFWG,EL
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18SOP
Packaging: Cut Tape (CT)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Output Configuration: High Side
Input Type: Inverting
Voltage - Load: 0V ~ 50V
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
на замовлення 6271 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+265.02 грн
10+167.00 грн
100+116.77 грн
500+90.91 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TBD62786APG TBD62786AFNG_datasheet_en_20170705.pdf?did=59011&prodName=TBD62786AFNG
TBD62786APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER P-CHAN 1:1 18DIP
Current - Output (Max): 400mA
Voltage - Supply (Vcc/Vdd): 2V ~ 50V
Voltage - Load: 0V ~ 50V
Input Type: Inverting
Rds On (Typ): 1.6Ohm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 8
Mounting Type: Through Hole
Output Type: P-Channel
Package / Case: 18-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 18-DIP
Ratio - Input:Output: 1:1
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+258.82 грн
20+146.14 грн
100+115.12 грн
500+88.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+10.03 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
2SA2215,LF docget.jsp?did=22651&prodName=2SA2215
2SA2215,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PNP 20V 2.5A UFM
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 190mV @ 53mA, 1.6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: UFM
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 500 mW
на замовлення 5290 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
8+44.17 грн
12+26.12 грн
100+16.71 грн
500+11.87 грн
1000+10.63 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
TA76432AS,T6F(J TA76432A_Series_2011-09-29.pdf
TA76432AS,T6F(J
Виробник: Toshiba Semiconductor and Storage
Description: IC VREF 15MA LSTM
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Supplier Device Package: LSTM
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
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