Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13529) > Сторінка 143 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TCR2EE24,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.4V 200MA ESVPackaging: Cut Tape (CT) Package / Case: SOT-553 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: ESV Voltage - Output (Min/Fixed): 2.4V Control Features: Enable PSRR: 73dB (1kHz) Voltage Dropout (Max): 0.31V @ 150mA Protection Features: Over Current |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN4902,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V US6Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: US6 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4902,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V US6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: US6 |
на замовлення 4100 шт: термін постачання 21-31 дні (днів) |
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TB67S179FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 48VQFNStep Resolution: 1 ~ 1/32 Motor Type - Stepper: Unipolar Supplier Device Package: 48-VQFN (7x7) Voltage - Load: 10V ~ 60V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 1.5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TB67S179FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 48VQFNPackage / Case: 48-VFQFN Exposed Pad Packaging: Cut Tape (CT) Step Resolution: 1 ~ 1/32 Motor Type - Stepper: Unipolar Supplier Device Package: 48-VQFN (7x7) Voltage - Load: 10V ~ 60V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (4) Operating Temperature: -20°C ~ 150°C (TJ) Interface: Parallel Current - Output: 1.5A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount |
на замовлення 7249 шт: термін постачання 21-31 дні (днів) |
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TC74ACT240F(EL,F) | Toshiba Semiconductor and Storage |
Description: IC BUFF INVERT 5.5V 20SOPSupplier Device Package: 20-SOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 4 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC74ACT240F(EL,F) | Toshiba Semiconductor and Storage |
Description: IC BUFF INVERT 5.5V 20SOPSupplier Device Package: 20-SOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 4 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Buffer, Inverting Number of Elements: 2 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SB3157DL6X,L | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 1 X 2:1 6MP6D Supplier Device Package: 6-MP6D (1.45x1) Voltage Supply Source: Single Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Multiplexer/Demultiplexer Circuit: 1 x 2:1 Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC7SB3157DL6X,L | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 1 X 2:1 6MP6D Supplier Device Package: 6-MP6D (1.45x1) Voltage Supply Source: Single Supply Independent Circuits: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Multiplexer/Demultiplexer Circuit: 1 x 2:1 Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1708JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1708JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3890 шт: термін постачання 21-31 дні (днів) |
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RN1709JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1709JE(TE85L,F) | Toshiba Semiconductor and Storage |
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2Part Status: Active Supplier Device Package: ESV Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 100mW Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Cut Tape (CT) |
на замовлення 3773 шт: термін постачання 21-31 дні (днів) |
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2SC6026MFV-Y,L3F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A VESMTransistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Tape & Reel (TR) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: VESM Frequency - Transition: 60MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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2SC6026MFV-Y,L3F | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A VESMPower - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: VESM Frequency - Transition: 60MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) |
на замовлення 21468 шт: термін постачання 21-31 дні (днів) |
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TB67S141NG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRIVER UNIPOLAR 24SDIPStep Resolution: 1, 1/2, 1/4 Motor Type - Stepper: Unipolar Supplier Device Package: 24-SDIP Voltage - Load: 10V ~ 40V Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 4.75V ~ 5.25V Output Configuration: Half Bridge (2) Operating Temperature: -20°C ~ 85°C (TA) Interface: Parallel Current - Output: 3A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Through Hole Package / Case: 24-SDIP (0.300", 7.62mm) Packaging: Tube |
на замовлення 975 шт: термін постачання 21-31 дні (днів) |
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TC7SBL66CFU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST SINGLE USV |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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TC7SBL66CFU,LF(CT | Toshiba Semiconductor and Storage |
Description: IC SWITCH SPST SINGLE USV |
на замовлення 205 шт: термін постачання 21-31 дні (днів) |
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TC75S102F,LF(CT | Toshiba Semiconductor and Storage |
Description: IC CMOS 1 CIRCUIT SMVVoltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V Current - Output / Channel: 11 mA Supplier Device Package: SMV Voltage - Input Offset: 100 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 630 Hz Current - Supply: 350nA Operating Temperature: -40°C ~ 105°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Number of Circuits: 1 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TC75S102F,LF(CT | Toshiba Semiconductor and Storage |
Description: IC CMOS 1 CIRCUIT SMVSupplier Device Package: SMV Voltage - Input Offset: 100 µV Current - Input Bias: 1 pA Gain Bandwidth Product: 630 Hz Current - Supply: 350nA Operating Temperature: -40°C ~ 105°C Amplifier Type: CMOS Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Voltage - Supply Span (Max): 5.5 V Voltage - Supply Span (Min): 1.5 V Current - Output / Channel: 11 mA Number of Circuits: 1 Part Status: Active |
на замовлення 6575 шт: термін постачання 21-31 дні (днів) |
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SSM3K345R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 20V 4A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SSM3K345R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CHANNEL 20V 4A SOT23FInput Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Supplier Device Package: SOT-23F Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-3 Flat Leads Packaging: Cut Tape (CT) |
на замовлення 7290 шт: термін постачання 21-31 дні (днів) |
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2SK208-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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2SK208-Y(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
на замовлення 1610 шт: термін постачання 21-31 дні (днів) |
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2SK208-GR(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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2SK208-GR(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V |
на замовлення 21591 шт: термін постачання 21-31 дні (днів) |
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2SK208-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SC59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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2SK208-O(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: SC-59 Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V |
на замовлення 41623 шт: термін постачання 21-31 дні (днів) |
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2SK208-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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2SK208-R(TE85L,F) | Toshiba Semiconductor and Storage |
Description: JFET N-CH 50V 6.5MA SMINIPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 125°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Voltage - Breakdown (V(BR)GSS): 50 V Current Drain (Id) - Max: 6.5 mA Supplier Device Package: S-Mini Part Status: Active Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V |
на замовлення 14177 шт: термін постачання 21-31 дні (днів) |
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN4989FE,LF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Frequency - Transition: 250MHz, 200MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: ES6 |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TC74HC00AFELF | Toshiba Semiconductor and Storage |
Description: IC GATE NAND 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF Part Status: Not For New Designs Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONMotor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-VQFN (3x3) Voltage - Load: 1.8V ~ 7V Technology: DMOS Applications: General Purpose Voltage - Supply: 1.8V ~ 7V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C Current - Output: 4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TC78H653FTG,EL | Toshiba Semiconductor and Storage |
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQONMotor Type - AC, DC: Brushed DC Motor Type - Stepper: Bipolar Supplier Device Package: 16-VQFN (3x3) Voltage - Load: 1.8V ~ 7V Technology: DMOS Applications: General Purpose Voltage - Supply: 1.8V ~ 7V Output Configuration: Half Bridge (4) Operating Temperature: -40°C ~ 105°C Current - Output: 4A Function: Driver - Fully Integrated, Control and Power Stage Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
на замовлення 18628 шт: термін постачання 21-31 дні (днів) |
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBDrain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V |
на замовлення 64675 шт: термін постачання 21-31 дні (днів) |
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SSM6K361NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 3.5A 6UDFNBGate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 6-UDFNB (2x2) Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V |
на замовлення 64794 шт: термін постачання 21-31 дні (днів) |
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLP3407SRH(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.4VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
на замовлення 1599 шт: термін постачання 21-31 дні (днів) |
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLP3407SRL(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Cut Tape (CT) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.2VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: S-VSON4T (2x1.45) Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
на замовлення 2569 шт: термін постачання 21-31 дні (днів) |
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VPackaging: Tape & Reel (TR) Package / Case: 4-SMD (0.079", 2.00mm) Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.26VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 110°C Termination Style: SMD (SMT) Tab Load Current: 1 A Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-S-VSON Part Status: Active Voltage - Load: 0 V ~ 60 V On-State Resistance (Max): 300 mOhms |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLP3407S(TP,E | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 1A 0-60VOn-State Resistance (Max): 300 mOhms Voltage - Load: 0 V ~ 60 V Part Status: Active Supplier Device Package: 4-S-VSON Load Current: 1 A Termination Style: SMD (SMT) Tab Circuit: SPST-NO (1 Form A) Voltage - Input: 1.26VDC Mounting Type: Surface Mount Output Type: AC, DC Relay Type: Photo-Coupled Relay (Photorelay) Package / Case: 4-SMD (0.079", 2.00mm) Packaging: Cut Tape (CT) Operating Temperature: -40°C ~ 110°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP2372(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.2V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.53V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 8mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 2.2ns, 1.6ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 8 mA |
на замовлення 4489 шт: термін постачання 21-31 дні (днів) |
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TLP3553(F) | Toshiba Semiconductor and Storage |
Description: SSR RELAY SPST-NO 3A 0-20VPackaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Output Type: AC, DC Mounting Type: Through Hole Voltage - Input: 1.33VDC Circuit: SPST-NO (1 Form A) Operating Temperature: -40°C ~ 85°C Termination Style: PC Pin Load Current: 3 A Approval Agency: CSA, cUL, UL Relay Type: Photo-Coupled Relay (Photorelay) Supplier Device Package: 4-DIP Part Status: Active Voltage - Load: 0 V ~ 20 V On-State Resistance (Max): 80 mOhms |
на замовлення 88 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPVgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 100A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 960mW (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 5413 шт: термін постачання 21-31 дні (днів) |
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TLP2631(LF5,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMDInputs - Side 1/Side 2: 2/0 Current - DC Forward (If) (Max): 20mA Voltage - Isolation: 2500Vrms Input Type: DC Data Rate: 10MBd Voltage - Forward (Vf) (Typ): 1.65V Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 8-SMD, Gull Wing Packaging: Tube Current - Output / Channel: 16 mA Number of Channels: 2 Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Common Mode Transient Immunity (Min): 1kV/µs Rise / Fall Time (Typ): 30ns, 30ns Supplier Device Package: 8-SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLP2631(LF1,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2631(TP5,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP2631(MBS,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPInput Logic Level - Low: 0.1V ~ 0.4V Input Logic Level - High: 0.75V ~ 2.48V Supplier Device Package: 5-SSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -40°C ~ 85°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) Current - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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7UL1G86FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE XOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 2774 шт: термін постачання 21-31 дні (днів) |
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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7UL1G02FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 1CH 2-INP 5SSOPPackaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 4940 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G08FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE AND 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3385 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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7UL1G32FU,LF | Toshiba Semiconductor and Storage |
Description: IC GATE OR 1CH 2-INP 5SSOP Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 5-SSOP Input Logic Level - High: 0.75V ~ 2.48V Input Logic Level - Low: 0.1V ~ 0.4V Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 1 µA |
на замовлення 3410 шт: термін постачання 21-31 дні (днів) |
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| TCR2EE24,LM(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.4V 200MA ESV
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: ESV
Voltage - Output (Min/Fixed): 2.4V
Control Features: Enable
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
товару немає в наявності
В кошику
од. на суму грн.
| RN4902,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 3.68 грн |
| RN4902,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
Description: TRANS PREBIAS 1NPN 1PNP 50V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: US6
на замовлення 4100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.60 грн |
| 29+ | 10.60 грн |
| 100+ | 6.60 грн |
| 500+ | 4.54 грн |
| 1000+ | 4.01 грн |
| TB67S179FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 96.21 грн |
| TB67S179FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Description: IC MOTOR DRIVER UNIPOLAR 48VQFN
Package / Case: 48-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Step Resolution: 1 ~ 1/32
Motor Type - Stepper: Unipolar
Supplier Device Package: 48-VQFN (7x7)
Voltage - Load: 10V ~ 60V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
на замовлення 7249 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 199.15 грн |
| 10+ | 143.79 грн |
| 25+ | 131.66 грн |
| 100+ | 111.09 грн |
| 250+ | 105.13 грн |
| 500+ | 101.54 грн |
| 1000+ | 96.97 грн |
| TC74ACT240F(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC74ACT240F(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BUFF INVERT 5.5V 20SOP
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 4
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| TC7SB3157DL6X,L |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| TC7SB3157DL6X,L |
Виробник: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
Description: IC MUX/DEMUX 1 X 2:1 6MP6D
Supplier Device Package: 6-MP6D (1.45x1)
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 1 x 2:1
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RN1708JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RN1708JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: NPN X 2 BRT Q1BSR=22KOHM Q1BER=4
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3890 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 14+ | 22.16 грн |
| 100+ | 12.54 грн |
| 500+ | 7.79 грн |
| 1000+ | 5.97 грн |
| 2000+ | 5.19 грн |
| RN1709JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| RN1709JE(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Description: NPN X 2 BRT Q1BSR=47KOHM Q1BER=2
Part Status: Active
Supplier Device Package: ESV
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 100mW
Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
на замовлення 3773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.00 грн |
| 14+ | 22.16 грн |
| 100+ | 12.54 грн |
| 500+ | 7.79 грн |
| 1000+ | 5.97 грн |
| 2000+ | 5.19 грн |
| 2SC6026MFV-Y,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Description: TRANS NPN 50V 0.15A VESM
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 1.81 грн |
| 2SC6026MFV-Y,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Description: TRANS NPN 50V 0.15A VESM
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: VESM
Frequency - Transition: 60MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
на замовлення 21468 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 46+ | 6.57 грн |
| 100+ | 4.04 грн |
| 500+ | 2.76 грн |
| 1000+ | 2.42 грн |
| 2000+ | 2.14 грн |
| TB67S141NG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Unipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Description: IC MOTOR DRIVER UNIPOLAR 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - Stepper: Unipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 40V
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 4.75V ~ 5.25V
Output Configuration: Half Bridge (2)
Operating Temperature: -20°C ~ 85°C (TA)
Interface: Parallel
Current - Output: 3A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.24 грн |
| 20+ | 202.22 грн |
| 40+ | 191.20 грн |
| 100+ | 168.52 грн |
| 260+ | 159.76 грн |
| 500+ | 154.99 грн |
| TC7SBL66CFU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST SINGLE USV
Description: IC SWITCH SPST SINGLE USV
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TC7SBL66CFU,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPST SINGLE USV
Description: IC SWITCH SPST SINGLE USV
на замовлення 205 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 14+ | 21.49 грн |
| 25+ | 19.67 грн |
| 100+ | 13.74 грн |
| TC75S102F,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
Description: IC CMOS 1 CIRCUIT SMV
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Number of Circuits: 1
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.84 грн |
| TC75S102F,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC CMOS 1 CIRCUIT SMV
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
Description: IC CMOS 1 CIRCUIT SMV
Supplier Device Package: SMV
Voltage - Input Offset: 100 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 630 Hz
Current - Supply: 350nA
Operating Temperature: -40°C ~ 105°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.5 V
Current - Output / Channel: 11 mA
Number of Circuits: 1
Part Status: Active
на замовлення 6575 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 55.02 грн |
| 10+ | 31.94 грн |
| 25+ | 26.36 грн |
| 100+ | 18.82 грн |
| 250+ | 15.91 грн |
| 500+ | 14.11 грн |
| 1000+ | 12.40 грн |
| SSM3K345R,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.42 грн |
| 6000+ | 6.49 грн |
| SSM3K345R,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 20V 4A SOT23F
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: SOT-23F
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-3 Flat Leads
Packaging: Cut Tape (CT)
на замовлення 7290 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 34.10 грн |
| 15+ | 20.00 грн |
| 100+ | 12.69 грн |
| 500+ | 8.91 грн |
| 1000+ | 7.94 грн |
| 2SK208-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 2SK208-Y(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
на замовлення 1610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 12+ | 26.49 грн |
| 100+ | 16.95 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.77 грн |
| 2SK208-GR(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.15 грн |
| 6000+ | 8.92 грн |
| 9000+ | 8.49 грн |
| 15000+ | 7.50 грн |
| 21000+ | 7.23 грн |
| 2SK208-GR(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2.6 mA @ 10 V
на замовлення 21591 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 12+ | 26.49 грн |
| 100+ | 16.95 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.77 грн |
| 2SK208-O(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.15 грн |
| 6000+ | 8.92 грн |
| 9000+ | 8.49 грн |
| 15000+ | 7.50 грн |
| 21000+ | 7.23 грн |
| 30000+ | 6.97 грн |
| 2SK208-O(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: SC-59
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 600 µA @ 10 V
на замовлення 41623 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.94 грн |
| 12+ | 26.49 грн |
| 100+ | 16.95 грн |
| 500+ | 12.02 грн |
| 1000+ | 10.77 грн |
| 2SK208-R(TE85L,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.98 грн |
| 6000+ | 9.66 грн |
| 9000+ | 9.19 грн |
| 2SK208-R(TE85L,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
Description: JFET N-CH 50V 6.5MA SMINI
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
Voltage - Breakdown (V(BR)GSS): 50 V
Current Drain (Id) - Max: 6.5 mA
Supplier Device Package: S-Mini
Part Status: Active
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
на замовлення 14177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.27 грн |
| 11+ | 28.36 грн |
| 100+ | 18.21 грн |
| 500+ | 12.95 грн |
| 1000+ | 11.62 грн |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 2.84 грн |
| RN4989FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
Description: TRANS PREBIAS 1NPN 1PNP 50V ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz, 200MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: ES6
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 22+ | 14.72 грн |
| 35+ | 8.73 грн |
| 100+ | 5.39 грн |
| 500+ | 3.70 грн |
| 1000+ | 3.25 грн |
| 2000+ | 2.88 грн |
| TC74HC00AFELF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Not For New Designs
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC78H653FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 42.20 грн |
| 8000+ | 39.80 грн |
| 12000+ | 39.38 грн |
| TC78H653FTG,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MTR DRVR BIPOLR 1.8-7V 16VQON
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 16-VQFN (3x3)
Voltage - Load: 1.8V ~ 7V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 1.8V ~ 7V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 105°C
Current - Output: 4A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 18628 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.56 грн |
| 10+ | 61.34 грн |
| 25+ | 55.61 грн |
| 100+ | 46.21 грн |
| 250+ | 43.38 грн |
| 500+ | 41.66 грн |
| 1000+ | 39.59 грн |
| SSM6K361NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
на замовлення 64675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 12.66 грн |
| 6000+ | 11.16 грн |
| 9000+ | 10.64 грн |
| 15000+ | 9.44 грн |
| 21000+ | 9.11 грн |
| 30000+ | 8.80 грн |
| SSM6K361NU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
Description: MOSFET N-CH 100V 3.5A 6UDFNB
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 6-UDFNB (2x2)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
на замовлення 64794 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.24 грн |
| 10+ | 32.24 грн |
| 100+ | 20.77 грн |
| 500+ | 14.84 грн |
| 1000+ | 13.34 грн |
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3407SRH(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.4VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.27 грн |
| 10+ | 338.78 грн |
| 100+ | 273.70 грн |
| 500+ | 230.18 грн |
| 1000+ | 227.27 грн |
| TLP3407SRL(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 234.68 грн |
| TLP3407SRL(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: S-VSON4T (2x1.45)
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
на замовлення 2569 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 467.27 грн |
| 10+ | 338.78 грн |
| 100+ | 273.70 грн |
| 500+ | 230.18 грн |
| 1000+ | 227.27 грн |
| TLP3407S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
Description: SSR RELAY SPST-NO 1A 0-60V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD (0.079", 2.00mm)
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.26VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 110°C
Termination Style: SMD (SMT) Tab
Load Current: 1 A
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-S-VSON
Part Status: Active
Voltage - Load: 0 V ~ 60 V
On-State Resistance (Max): 300 mOhms
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLP3407S(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
Description: SSR RELAY SPST-NO 1A 0-60V
On-State Resistance (Max): 300 mOhms
Voltage - Load: 0 V ~ 60 V
Part Status: Active
Supplier Device Package: 4-S-VSON
Load Current: 1 A
Termination Style: SMD (SMT) Tab
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.26VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Relay Type: Photo-Coupled Relay (Photorelay)
Package / Case: 4-SMD (0.079", 2.00mm)
Packaging: Cut Tape (CT)
Operating Temperature: -40°C ~ 110°C
товару немає в наявності
В кошику
од. на суму грн.
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 49.47 грн |
| TLP2372(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.2V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.53V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 8mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 2.2ns, 1.6ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 8 mA
на замовлення 4489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.66 грн |
| 10+ | 83.35 грн |
| 100+ | 63.20 грн |
| 500+ | 50.94 грн |
| 1000+ | 48.21 грн |
| TLP3553(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
Description: SSR RELAY SPST-NO 3A 0-20V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 3 A
Approval Agency: CSA, cUL, UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 20 V
On-State Resistance (Max): 80 mOhms
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.35 грн |
| 10+ | 176.25 грн |
| 25+ | 168.34 грн |
| 50+ | 152.56 грн |
| TPH1R306P1,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Description: MOSFET N-CH 60V 100A 8SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 68.18 грн |
| TPH1R306P1,L1Q |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 5413 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.25 грн |
| 10+ | 145.96 грн |
| 100+ | 101.30 грн |
| 500+ | 77.13 грн |
| 1000+ | 75.41 грн |
| TLP2631(LF5,F) |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
Description: OPTOISO 2.5KV 2CH OPEN COLL 8SMD
Inputs - Side 1/Side 2: 2/0
Current - DC Forward (If) (Max): 20mA
Voltage - Isolation: 2500Vrms
Input Type: DC
Data Rate: 10MBd
Voltage - Forward (Vf) (Typ): 1.65V
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 8-SMD, Gull Wing
Packaging: Tube
Current - Output / Channel: 16 mA
Number of Channels: 2
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Common Mode Transient Immunity (Min): 1kV/µs
Rise / Fall Time (Typ): 30ns, 30ns
Supplier Device Package: 8-SMD
товару немає в наявності
В кошику
од. на суму грн.
| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Description: IC GATE XOR 1CH 2-INP 5SSOP
Input Logic Level - Low: 0.1V ~ 0.4V
Input Logic Level - High: 0.75V ~ 2.48V
Supplier Device Package: 5-SSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G86FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 2774 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 20+ | 15.37 грн |
| 25+ | 12.54 грн |
| 100+ | 8.77 грн |
| 250+ | 7.29 грн |
| 500+ | 6.38 грн |
| 1000+ | 5.53 грн |
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 7UL1G02FU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE NOR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 4940 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.12 грн |
| 20+ | 15.30 грн |
| 25+ | 12.48 грн |
| 100+ | 8.71 грн |
| 250+ | 7.25 грн |
| 500+ | 6.34 грн |
| 1000+ | 5.49 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.86 грн |
| 7UL1G08FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE AND 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3385 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 16+ | 18.73 грн |
| 25+ | 16.39 грн |
| 100+ | 9.96 грн |
| 250+ | 8.24 грн |
| 500+ | 6.59 грн |
| 1000+ | 4.97 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.86 грн |
| 7UL1G32FU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 1CH 2-INP 5SSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 5-SSOP
Input Logic Level - High: 0.75V ~ 2.48V
Input Logic Level - Low: 0.1V ~ 0.4V
Max Propagation Delay @ V, Max CL: 4.4ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
на замовлення 3410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.35 грн |
| 16+ | 18.73 грн |
| 25+ | 16.39 грн |
| 100+ | 9.96 грн |
| 250+ | 8.24 грн |
| 500+ | 6.59 грн |
| 1000+ | 4.97 грн |

























