Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13451) > Сторінка 193 з 225
Фото | Назва | Виробник | Інформація |
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TC74LCX245F(EL,K,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74LCX245F(EL,K,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-SOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RN1101,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1101,LXHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: SSM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 100 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8939 шт: термін постачання 21-31 дні (днів) |
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RN1101MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RN1101MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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TK12A60W,S4VX | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
на замовлення 70 шт: термін постачання 21-31 дні (днів) |
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TK13P25D,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TK13P25D,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 1mA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
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2SC6000(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: 2SC6000(TE16L1,NQ) Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V Supplier Device Package: PW-MOLD Part Status: Active Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 20 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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XPQ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPQ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 3V @ 500µA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPQR3004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 828 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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XPQR3004PB,LXHQ | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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74VHC04FT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74VHC04FT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 7058 шт: термін постачання 21-31 дні (днів) |
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TC74VHC04FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14VSSOP Packaging: Tape & Reel (TR) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC74VHC04FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14VSSOP Packaging: Cut Tape (CT) Package / Case: 14-VFSOP (0.118", 3.00mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-VSSOP Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SSM6L40TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA Supplier Device Package: UF6 Part Status: Active |
на замовлення 108000 шт: термін постачання 21-31 дні (днів) |
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SSM6L40TU,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 500mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA Supplier Device Package: UF6 Part Status: Active |
на замовлення 110948 шт: термін постачання 21-31 дні (днів) |
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TC7SET14FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Features: Schmitt Trigger Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TC7SET14FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 5-SSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 2 µA |
на замовлення 12770 шт: термін постачання 21-31 дні (днів) |
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HN1C01FE-GR,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HN1C01FE-GR,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 100mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: ES6 Part Status: Active |
на замовлення 2848 шт: термін постачання 21-31 дні (днів) |
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TB67H400AHG | Toshiba Semiconductor and Storage |
![]() Packaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: Parallel, PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 25-HZIP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 510 шт: термін постачання 21-31 дні (днів) |
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TC7WH08FU,LJ(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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2SC6042,T2HOSH1Q(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: MSTM Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC6042,T2WNLQ(J | Toshiba Semiconductor and Storage |
![]() Packaging: Bulk Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: MSTM Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
2SC6142(Q) | Toshiba Semiconductor and Storage |
![]() Packaging: Box Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: PW-MOLD2 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1.1 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TCR8BM095A,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.95V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.225V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR8BM095A,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.95V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.225V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 9845 шт: термін постачання 21-31 дні (днів) |
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TCR8BM09A,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.22V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TCR8BM09A,L3F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 800mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 36 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Current Limit, Enable Part Status: Active Voltage Dropout (Max): 0.22V @ 800mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) |
на замовлення 9814 шт: термін постачання 21-31 дні (днів) |
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TCR5RG09A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 0.9V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TCR5RG09A,LF | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 13 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-WCSPF (0.65x0.65) Voltage - Output (Min/Fixed): 0.9V Part Status: Active PSRR: 100dB ~ 59dB (1kHz ~ 1MHz) Protection Features: Over Current, Over Temperature |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP241BF(D4TP4,F | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 2 A Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 200 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: CSA, cUL, UL, VDE |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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TLP241BF(D4TP4,F | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: AC, DC Mounting Type: Surface Mount Voltage - Input: 1.65VDC Circuit: SPST-NO (1 Form A) Termination Style: Gull Wing Load Current: 2 A Supplier Device Package: 4-SMD Part Status: Active Voltage - Load: 0 V ~ 100 V On-State Resistance (Max): 200 mOhms Operating Temperature: -40°C ~ 110°C Approval Agency: CSA, cUL, UL, VDE |
на замовлення 2728 шт: термін постачання 21-31 дні (днів) |
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74HCT240D | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOIC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HCT240D | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 1534 шт: термін постачання 21-31 дні (днів) |
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TPW2900ENH,L1Q | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPW2900ENH,L1Q | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V Power Dissipation (Max): 800mW (Ta), 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-DSOP Advance Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
на замовлення 9976 шт: термін постачання 21-31 дні (днів) |
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TC7SB3157DL6X,(S2E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Mounting Type: Surface Mount Circuit: 1 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 6-MP6D (1.45x1) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7SB3157DL6X,(S2E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Mounting Type: Surface Mount Circuit: 1 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 6-MP6D (1.45x1) Part Status: Active |
на замовлення 2457 шт: термін постачання 21-31 дні (днів) |
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TLP5702(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 1 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP5702(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 1 A |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
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TLP5702H(TP,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.295", 7.50mm Width) Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 15V ~ 30V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO Rise / Fall Time (Typ): 37ns, 50ns Common Mode Transient Immunity (Min): 50kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Part Status: Active Number of Channels: 1 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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RN2106MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN2106MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VESM Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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RN1906FE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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RN1906FE,LF(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 100mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: ES6 Part Status: Active |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLP291(V4GRTP,SE | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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TLP291(V4GRTP,SE | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 14125 шт: термін постачання 21-31 дні (днів) |
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TLP265J(TPR,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: cUR, UR Current - Hold (Ih): 1mA (Typ) Turn On Time: 100µs (Max) Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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TLP265J(TPR,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: cUR, UR Current - Hold (Ih): 1mA (Typ) Turn On Time: 100µs (Max) Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 31254 шт: термін постачання 21-31 дні (днів) |
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TLP265J(V4-TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR, VDE Current - Hold (Ih): 1mA (Typ) Turn On Time: 20µs Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLP265J(V4-TPL,E | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR, VDE Current - Hold (Ih): 1mA (Typ) Turn On Time: 20µs Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 10mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HC4053FT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C On-State Resistance (Max): 100Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-TSSOPB Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm Switch Time (Ton, Toff) (Max): 38ns, 38ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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74HC4053FT | Toshiba Semiconductor and Storage |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C On-State Resistance (Max): 100Ohm -3db Bandwidth: 200MHz Supplier Device Package: 16-TSSOPB Voltage - Supply, Single (V+): 2V ~ 6V Crosstalk: -50dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 5Ohm Switch Time (Ton, Toff) (Max): 38ns, 38ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Active Number of Circuits: 3 |
на замовлення 2455 шт: термін постачання 21-31 дні (днів) |
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TLP185(TPR,SE | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 6-SOP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TC7WH14FK,LJ(CT | Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 3 Supplier Device Package: 8-SSOP Input Logic Level - High: 2.2V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF Part Status: Active Number of Circuits: 3 Current - Quiescent (Max): 2 µA |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TC74LCX245F(EL,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Part Status: Active
Description: IC TXRX NON-INVERT 3.6V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
TC74LCX245F(EL,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Part Status: Active
Description: IC TXRX NON-INVERT 3.6V 20SOP
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-SOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
RN1101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 3.84 грн |
6000+ | 3.36 грн |
RN1101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: SSM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8939 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
23+ | 14.29 грн |
33+ | 9.48 грн |
100+ | 6.34 грн |
500+ | 4.55 грн |
1000+ | 4.08 грн |
RN1101MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 3.34 грн |
16000+ | 2.91 грн |
24000+ | 2.76 грн |
RN1101MFV,L3XHF(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.05 грн |
28+ | 11.16 грн |
100+ | 6.92 грн |
500+ | 4.77 грн |
1000+ | 4.22 грн |
2000+ | 3.75 грн |
TK12A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 268.34 грн |
50+ | 174.24 грн |
TK13P25D,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2000+ | 26.38 грн |
TK13P25D,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 63.51 грн |
10+ | 50.23 грн |
100+ | 39.08 грн |
500+ | 31.09 грн |
1000+ | 25.32 грн |
2SC6000(TE16L1,NQ) |
Виробник: Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 20 W
Description: 2SC6000(TE16L1,NQ)
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Supplier Device Package: PW-MOLD
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 20 W
товару немає в наявності
В кошику
од. на суму грн.
XPQ1R004PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1500+ | 89.88 грн |
XPQ1R004PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3V @ 500µA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 266.75 грн |
10+ | 167.81 грн |
100+ | 117.28 грн |
500+ | 89.81 грн |
XPQR3004PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 828 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
XPQR3004PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 483.48 грн |
10+ | 323.53 грн |
100+ | 250.92 грн |
74VHC04FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 9.57 грн |
5000+ | 8.93 грн |
74VHC04FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 7058 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
14+ | 23.02 грн |
20+ | 15.52 грн |
25+ | 13.79 грн |
100+ | 11.15 грн |
250+ | 10.30 грн |
500+ | 9.78 грн |
1000+ | 9.21 грн |
TC74VHC04FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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TC74VHC04FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-VSSOP
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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SSM6L40TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 30V 1.6A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 108000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.94 грн |
6000+ | 8.13 грн |
9000+ | 7.67 грн |
15000+ | 7.17 грн |
21000+ | 7.15 грн |
30000+ | 6.99 грн |
75000+ | 6.76 грн |
SSM6L40TU,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Description: MOSFET N/P-CH 30V 1.6A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 110948 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.46 грн |
12+ | 26.60 грн |
100+ | 16.12 грн |
500+ | 11.53 грн |
1000+ | 9.88 грн |
TC7SET14FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.56 грн |
6000+ | 3.95 грн |
TC7SET14FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 5-SSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
на замовлення 12770 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
13+ | 24.61 грн |
18+ | 17.58 грн |
25+ | 15.38 грн |
100+ | 9.34 грн |
250+ | 7.73 грн |
500+ | 6.19 грн |
1000+ | 4.66 грн |
HN1C01FE-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
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HN1C01FE-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2NPN 50V 0.15A ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 100mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: ES6
Part Status: Active
на замовлення 2848 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
18+ | 18.26 грн |
30+ | 10.47 грн |
100+ | 6.51 грн |
500+ | 4.47 грн |
1000+ | 3.95 грн |
2000+ | 3.50 грн |
TB67H400AHG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 508.09 грн |
10+ | 441.87 грн |
25+ | 421.32 грн |
100+ | 343.31 грн |
250+ | 327.88 грн |
500+ | 298.95 грн |
TC7WH08FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.76 грн |
6000+ | 4.44 грн |
9000+ | 4.36 грн |
15000+ | 4.01 грн |
21000+ | 3.97 грн |
30000+ | 3.92 грн |
2SC6042,T2HOSH1Q(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
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2SC6042,T2WNLQ(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
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од. на суму грн.
2SC6142(Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
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TCR8BM095A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.95V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.95V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.225V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: 800MA LDO, VOUT=0.95V, DROPOUT=1
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.95V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.225V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 9.18 грн |
TCR8BM095A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: 800MA LDO, VOUT=0.95V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.95V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.225V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: 800MA LDO, VOUT=0.95V, DROPOUT=1
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.95V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.225V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9845 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.95 грн |
10+ | 33.41 грн |
25+ | 27.58 грн |
100+ | 19.71 грн |
250+ | 16.66 грн |
500+ | 14.79 грн |
1000+ | 13.00 грн |
2500+ | 11.33 грн |
TCR8BM09A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 800MA 5-DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 0.9V 800MA 5-DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 12.16 грн |
TCR8BM09A,L3F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 800MA 5-DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 0.9V 800MA 5-DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 800mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 36 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Current Limit, Enable
Part Status: Active
Voltage Dropout (Max): 0.22V @ 800mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
на замовлення 9814 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.13 грн |
10+ | 35.01 грн |
25+ | 28.90 грн |
100+ | 20.65 грн |
250+ | 17.46 грн |
500+ | 15.50 грн |
1000+ | 13.62 грн |
2500+ | 11.88 грн |
TCR5RG09A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 0.9V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 500MA 4-WCSPF
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 0.9V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
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TCR5RG09A,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 0.9V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 0.9V 500MA 4-WCSPF
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 13 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-WCSPF (0.65x0.65)
Voltage - Output (Min/Fixed): 0.9V
Part Status: Active
PSRR: 100dB ~ 59dB (1kHz ~ 1MHz)
Protection Features: Over Current, Over Temperature
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TLP241BF(D4TP4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 105.17 грн |
2000+ | 97.05 грн |
TLP241BF(D4TP4,F |
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Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
Description: SSR RELAY SPST-NO 2A 0-100V
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.65VDC
Circuit: SPST-NO (1 Form A)
Termination Style: Gull Wing
Load Current: 2 A
Supplier Device Package: 4-SMD
Part Status: Active
Voltage - Load: 0 V ~ 100 V
On-State Resistance (Max): 200 mOhms
Operating Temperature: -40°C ~ 110°C
Approval Agency: CSA, cUL, UL, VDE
на замовлення 2728 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 223.08 грн |
10+ | 156.41 грн |
100+ | 121.58 грн |
500+ | 99.73 грн |
74HCT240D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Part Status: Active
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од. на суму грн.
74HCT240D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER INVERT 5.5V 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 1534 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 91.30 грн |
10+ | 53.82 грн |
25+ | 44.77 грн |
100+ | 32.46 грн |
250+ | 27.77 грн |
500+ | 24.88 грн |
1000+ | 22.09 грн |
TPW2900ENH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 92.72 грн |
TPW2900ENH,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Description: PB-F POWER MOSFET TRANSISTOR DSO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 800mW (Ta), 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-DSOP Advance
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
на замовлення 9976 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.40 грн |
10+ | 169.95 грн |
100+ | 135.00 грн |
500+ | 102.85 грн |
1000+ | 88.99 грн |
2000+ | 87.19 грн |
TC7SB3157DL6X,(S2E |
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Виробник: Toshiba Semiconductor and Storage
Description: BUS SWITCH SINGLE 1:2 MUX/DEMUX
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MP6D (1.45x1)
Part Status: Active
Description: BUS SWITCH SINGLE 1:2 MUX/DEMUX
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MP6D (1.45x1)
Part Status: Active
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TC7SB3157DL6X,(S2E |
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Виробник: Toshiba Semiconductor and Storage
Description: BUS SWITCH SINGLE 1:2 MUX/DEMUX
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MP6D (1.45x1)
Part Status: Active
Description: BUS SWITCH SINGLE 1:2 MUX/DEMUX
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MP6D (1.45x1)
Part Status: Active
на замовлення 2457 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 43.66 грн |
13+ | 24.62 грн |
25+ | 20.21 грн |
100+ | 14.30 грн |
250+ | 12.00 грн |
500+ | 10.59 грн |
1000+ | 9.25 грн |
TLP5702(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 1 A
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 1 A
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TLP5702(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 1 A
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 1 A
на замовлення 241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 96.06 грн |
10+ | 65.82 грн |
100+ | 49.32 грн |
TLP5702H(TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
Description: OPTOISOLTR 5KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 15V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 37ns, 50ns
Common Mode Transient Immunity (Min): 50kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Part Status: Active
Number of Channels: 1
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 111.94 грн |
10+ | 76.53 грн |
100+ | 57.72 грн |
500+ | 46.38 грн |
RN2106MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8000+ | 4.09 грн |
RN2106MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: AUTO AEC-Q PNP Q1BSR=4.7K, Q1BER
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: VESM
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12+ | 26.99 грн |
15+ | 21.18 грн |
100+ | 11.22 грн |
500+ | 6.93 грн |
1000+ | 4.71 грн |
2000+ | 4.25 грн |
RN1906FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 3.39 грн |
RN1906FE,LF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
Description: TRANS 2NPN PREBIAS 0.1W ES6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 100mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: ES6
Part Status: Active
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
17+ | 19.05 грн |
TLP291(V4GRTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 11.35 грн |
5000+ | 10.30 грн |
7500+ | 9.97 грн |
12500+ | 9.02 грн |
TLP291(V4GRTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 14125 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.55 грн |
14+ | 21.94 грн |
100+ | 15.66 грн |
500+ | 12.07 грн |
1000+ | 11.21 грн |
TLP265J(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 100µs (Max)
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 100µs (Max)
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 20.56 грн |
6000+ | 18.82 грн |
9000+ | 18.32 грн |
15000+ | 16.67 грн |
21000+ | 16.35 грн |
TLP265J(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 100µs (Max)
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: cUR, UR
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 100µs (Max)
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 31254 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 56.37 грн |
10+ | 37.92 грн |
100+ | 27.74 грн |
500+ | 21.77 грн |
1000+ | 20.37 грн |
TLP265J(V4-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 20µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 20µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
TLP265J(V4-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 20µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV TRIAC 1CH 6SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR, VDE
Current - Hold (Ih): 1mA (Typ)
Turn On Time: 20µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
товару немає в наявності
В кошику
од. на суму грн.
74HC4053FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDTX3 100OHM 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-TSSOPB
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDTX3 100OHM 16TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-TSSOPB
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
товару немає в наявності
В кошику
од. на суму грн.
74HC4053FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC SWITCH SPDTX3 100OHM 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-TSSOPB
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
Description: IC SWITCH SPDTX3 100OHM 16TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 200MHz
Supplier Device Package: 16-TSSOPB
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 5Ohm
Switch Time (Ton, Toff) (Max): 38ns, 38ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Active
Number of Circuits: 3
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15+ | 21.44 грн |
22+ | 14.37 грн |
25+ | 12.75 грн |
100+ | 10.29 грн |
250+ | 9.49 грн |
500+ | 9.01 грн |
1000+ | 8.47 грн |
TLP185(TPR,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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TC7WH14FK,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 3CH 3-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 3
Supplier Device Package: 8-SSOP
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 10.6ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 3
Current - Quiescent (Max): 2 µA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.76 грн |
6000+ | 4.44 грн |
9000+ | 4.36 грн |