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SSM6K406TU,LF SSM6K406TU,LF Toshiba Semiconductor and Storage SSM6K406TU_datasheet_en_20140301.pdf?did=11741&prodName=SSM6K406TU Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+14.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K406TU,LF SSM6K406TU,LF Toshiba Semiconductor and Storage SSM6K406TU_datasheet_en_20140301.pdf?did=11741&prodName=SSM6K406TU Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 5856 шт:
термін постачання 21-31 дні (днів)
6+60.45 грн
10+35.93 грн
100+23.19 грн
500+16.61 грн
1000+14.94 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLP3554(F) TLP3554(F) Toshiba Semiconductor and Storage TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554 Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
2+249.58 грн
10+225.12 грн
25+200.05 грн
50+178.36 грн
100+168.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RN4903,LXHF(CT RN4903,LXHF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+6.31 грн
6000+5.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN4903,LXHF(CT RN4903,LXHF(CT Toshiba Semiconductor and Storage RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903 Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
12+30.23 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TK3P80E,RQ TK3P80E,RQ Toshiba Semiconductor and Storage docget.jsp?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
TK3P80E,RQ TK3P80E,RQ Toshiba Semiconductor and Storage docget.jsp?did=14695&prodName=TK3P80E Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
3+147.68 грн
10+90.48 грн
100+61.09 грн
500+45.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TODX2960A(F) Toshiba Semiconductor and Storage TODX2960A(F)_datasheet_en_20160415.pdf?did=37192&prodName=TODX2960A(F) Description: MOD OPTICAL TXRX GP 10PIN
Packaging: Tube
Connector Type: JIS F07
Wavelength: 770nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Part Status: Not For New Designs
товару немає в наявності
В кошику  од. на суму  грн.
SSM6J808R,LF SSM6J808R,LF Toshiba Semiconductor and Storage docget.jsp?did=67689&prodName=SSM6J808R Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+16.80 грн
6000+14.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6J808R,LF SSM6J808R,LF Toshiba Semiconductor and Storage docget.jsp?did=67689&prodName=SSM6J808R Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10751 шт:
термін постачання 21-31 дні (днів)
5+69.09 грн
10+41.58 грн
100+27.05 грн
500+19.50 грн
1000+17.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SSM6J825R,LF SSM6J825R,LF Toshiba Semiconductor and Storage docget.jsp?did=141463&prodName=SSM6J825R Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+10.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6J825R,LF SSM6J825R,LF Toshiba Semiconductor and Storage docget.jsp?did=141463&prodName=SSM6J825R Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
10+36.27 грн
12+28.28 грн
100+19.26 грн
500+13.56 грн
1000+10.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TK2R9E10PL,S1X TK2R9E10PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=60422&prodName=TK2R9E10PL Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
2+304.85 грн
50+150.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8R2E06PL,S1X TK8R2E06PL,S1X Toshiba Semiconductor and Storage docget.jsp?did=55709&prodName=TK8R2E06PL Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
3+147.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK15S04N1L,LXHQ TK15S04N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
TK15S04N1L,LXHQ TK15S04N1L,LXHQ Toshiba Semiconductor and Storage docget.jsp?did=14571&prodName=TK15S04N1L Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
4+101.04 грн
10+61.29 грн
100+40.56 грн
500+29.72 грн
1000+27.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
74HC244D 74HC244D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+20.42 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
74HC244D 74HC244D Toshiba Semiconductor and Storage 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11583&prodName=SSM6L39TU Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
SSM6L39TU,LF SSM6L39TU,LF Toshiba Semiconductor and Storage docget.jsp?did=11583&prodName=SSM6L39TU Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
8+46.63 грн
12+27.94 грн
100+17.85 грн
500+12.66 грн
1000+11.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TK62N60W5,S1VF TK62N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=15641&prodName=TK62N60W5 Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
1+1101.96 грн
В кошику  од. на суму  грн.
TB62747AFG,C8,EL TB62747AFG,C8,EL Toshiba Semiconductor and Storage TB62747AFG_datasheet_en_20170124.pdf?did=21718&prodName=TB62747AFG Description: 16-CH CONSTANT CURRENT LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 45mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
5+80.32 грн
10+55.72 грн
25+50.36 грн
100+41.69 грн
250+39.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TOTX1353(F) TOTX1353(F) Toshiba Semiconductor and Storage TOTX1353%28F%29_datasheet_en_20140520.pdf?did=14724&prodName=TOTX1353(F) Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
товару немає в наявності
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TK20E60W,S1VX TK20E60W,S1VX Toshiba Semiconductor and Storage docget.jsp?did=13839&prodName=TK20E60W Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
1+523.34 грн
50+271.27 грн
В кошику  од. на суму  грн.
TK25E60X5,S1X TK25E60X5,S1X Toshiba Semiconductor and Storage docget.jsp?did=15556&prodName=TK25E60X5 Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
1+465.48 грн
50+238.34 грн
В кошику  од. на суму  грн.
RN1304,LXHF RN1304,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1304 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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RN1304,LXHF RN1304,LXHF Toshiba Semiconductor and Storage docget.jsp?did=18776&prodName=RN1304 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
14+25.91 грн
22+15.38 грн
100+9.64 грн
500+6.70 грн
1000+5.94 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN1307,LF RN1307,LF Toshiba Semiconductor and Storage docget.jsp?did=18778&prodName=RN1308 Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1307,LF RN1307,LF Toshiba Semiconductor and Storage docget.jsp?did=18778&prodName=RN1308 Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
20+18.14 грн
24+14.14 грн
100+7.53 грн
500+4.64 грн
1000+3.16 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
RN1308,LXHF RN1308,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
RN1308,LXHF RN1308,LXHF Toshiba Semiconductor and Storage RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307 Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
20+18.14 грн
31+10.81 грн
100+6.80 грн
500+4.72 грн
1000+4.19 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
TK10P50W,RQ TK10P50W,RQ Toshiba Semiconductor and Storage docget.jsp?did=53221&prodName=TK10P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
товару немає в наявності
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TK10P50W,RQ TK10P50W,RQ Toshiba Semiconductor and Storage docget.jsp?did=53221&prodName=TK10P50W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
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SSM6J401TU,LF SSM6J401TU,LF Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
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SSM6J401TU,LF SSM6J401TU,LF Toshiba Semiconductor and Storage Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
на замовлення 2641 шт:
термін постачання 21-31 дні (днів)
10+36.27 грн
13+27.53 грн
100+16.48 грн
500+14.32 грн
1000+9.74 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TC4069UBF(EL,N,F) TC4069UBF(EL,N,F) Toshiba Semiconductor and Storage docget.jsp?did=2724&prodName=TC4069UBF Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
товару немає в наявності
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TC4069UBF(EL,N,F) TC4069UBF(EL,N,F) Toshiba Semiconductor and Storage docget.jsp?did=2724&prodName=TC4069UBF Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
товару немає в наявності
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TBD62089APG TBD62089APG Toshiba Semiconductor and Storage TBD62089APG_datasheet_en_20161221.pdf?did=56183&prodName=TBD62089APG Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
2+248.72 грн
10+155.93 грн
100+108.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CRH02(TE85L,Q,M) CRH02(TE85L,Q,M) Toshiba Semiconductor and Storage CRH02_Web.pdf Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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CRH02(TE85L,Q,M) CRH02(TE85L,Q,M) Toshiba Semiconductor and Storage CRH02_Web.pdf Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1183 шт:
термін постачання 21-31 дні (днів)
11+33.68 грн
17+20.37 грн
100+14.57 грн
500+10.26 грн
1000+9.15 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TLP3073(LF1,F TLP3073(LF1,F Toshiba Semiconductor and Storage TLP3073_datasheet_en_20200217.pdf?did=30347&prodName=TLP3073 Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 1mA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
3+126.95 грн
50+61.39 грн
100+56.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3062A(LF1,F TLP3062A(LF1,F Toshiba Semiconductor and Storage docget.jsp?did=30346&prodName=TLP3062A Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
3+115.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5751(D4-LF4,E Toshiba Semiconductor and Storage TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751 Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
2+195.17 грн
10+122.83 грн
100+89.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74HC74D 74HC74D Toshiba Semiconductor and Storage 74HC74D_datasheet_en_20201117.pdf?did=37138&prodName=74HC74D Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
товару немає в наявності
В кошику  од. на суму  грн.
74HC74D 74HC74D Toshiba Semiconductor and Storage 74HC74D_datasheet_en_20201117.pdf?did=37138&prodName=74HC74D Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLP183(GRH-TPL,E TLP183(GRH-TPL,E Toshiba Semiconductor and Storage TLP183_datasheet_en_20201118.pdf?did=14417&prodName=TLP183 Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+14.47 грн
6000+13.16 грн
9000+12.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP183(GRH-TPL,E TLP183(GRH-TPL,E Toshiba Semiconductor and Storage TLP183_datasheet_en_20201118.pdf?did=14417&prodName=TLP183 Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 9217 шт:
термін постачання 21-31 дні (днів)
9+42.32 грн
12+28.11 грн
100+20.17 грн
500+15.59 грн
1000+14.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
XPN3R804NC,L1XHQ XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+37.99 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN3R804NC,L1XHQ XPN3R804NC,L1XHQ Toshiba Semiconductor and Storage XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
на замовлення 14885 шт:
термін постачання 21-31 дні (днів)
3+145.95 грн
10+89.07 грн
100+59.85 грн
500+44.42 грн
1000+40.64 грн
2000+37.47 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XPN9R614MC,L1XHQ XPN9R614MC,L1XHQ Toshiba Semiconductor and Storage XPN9R614MC_datasheet_en_20211208.pdf?did=65305&prodName=XPN9R614MC Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+36.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN9R614MC,L1XHQ XPN9R614MC,L1XHQ Toshiba Semiconductor and Storage XPN9R614MC_datasheet_en_20211208.pdf?did=65305&prodName=XPN9R614MC Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8792 шт:
термін постачання 21-31 дні (днів)
3+142.49 грн
10+86.82 грн
100+58.28 грн
500+43.21 грн
1000+39.51 грн
2000+36.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XPN7R104NC,L1XHQ XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68660&prodName=XPN7R104NC Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+37.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN7R104NC,L1XHQ XPN7R104NC,L1XHQ Toshiba Semiconductor and Storage docget.jsp?did=68660&prodName=XPN7R104NC Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
на замовлення 11842 шт:
термін постачання 21-31 дні (днів)
3+142.49 грн
10+87.32 грн
100+58.62 грн
500+43.47 грн
1000+39.76 грн
2000+36.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
74HC123D 74HC123D Toshiba Semiconductor and Storage 74HC123D_datasheet_en_20201110.pdf?did=37293&prodName=74HC123D Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+16.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HC123D 74HC123D Toshiba Semiconductor and Storage 74HC123D_datasheet_en_20201110.pdf?did=37293&prodName=74HC123D Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 4571 шт:
термін постачання 21-31 дні (днів)
10+36.27 грн
14+24.62 грн
25+22.02 грн
100+17.97 грн
250+16.69 грн
500+15.91 грн
1000+15.02 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CUHS20S60,H3F CUHS20S60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70190&prodName=CUHS20S60 Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
товару немає в наявності
В кошику  од. на суму  грн.
CUHS20S60,H3F CUHS20S60,H3F Toshiba Semiconductor and Storage docget.jsp?did=70190&prodName=CUHS20S60 Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
25+13.82 грн
35+9.56 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
TC74AC14F(EL,F) TC74AC14F(EL,F) Toshiba Semiconductor and Storage docget.jsp?did=70724&prodName=TC74AC14F Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
товару немає в наявності
В кошику  од. на суму  грн.
TC74VHC4040F(E,K,F TC74VHC4040F(E,K,F Toshiba Semiconductor and Storage docget.jsp?did=18069&prodName=TC74VHC4040F Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
товару немає в наявності
В кошику  од. на суму  грн.
TC74VHC4040F(E,K,F TC74VHC4040F(E,K,F Toshiba Semiconductor and Storage docget.jsp?did=18069&prodName=TC74VHC4040F Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
товару немає в наявності
В кошику  од. на суму  грн.
SSM6K406TU,LF SSM6K406TU_datasheet_en_20140301.pdf?did=11741&prodName=SSM6K406TU
SSM6K406TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.19 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6K406TU,LF SSM6K406TU_datasheet_en_20140301.pdf?did=11741&prodName=SSM6K406TU
SSM6K406TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 4.4A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
на замовлення 5856 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.45 грн
10+35.93 грн
100+23.19 грн
500+16.61 грн
1000+14.94 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TLP3554(F) TLP3554_datasheet_en_20200325.pdf?did=11948&prodName=TLP3554
TLP3554(F)
Виробник: Toshiba Semiconductor and Storage
Description: SSR RELAY SPST-NO 2.5A 0-40V
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.33VDC
Circuit: SPST-NO (1 Form A)
Termination Style: PC Pin
Load Current: 2.5 A
Supplier Device Package: 4-DIP
Part Status: Active
Voltage - Load: 0 V ~ 40 V
On-State Resistance (Max): 150 mOhms
на замовлення 166 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.58 грн
10+225.12 грн
25+200.05 грн
50+178.36 грн
100+168.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RN4903,LXHF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.31 грн
6000+5.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN4903,LXHF(CT RN4903_datasheet_en_20210824.pdf?did=18952&prodName=RN4903
RN4903,LXHF(CT
Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q TR PNP + NPN BRT Q1BS
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 200MHz, 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: US6
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.23 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TK3P80E,RQ docget.jsp?did=14695&prodName=TK3P80E
TK3P80E,RQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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TK3P80E,RQ docget.jsp?did=14695&prodName=TK3P80E
TK3P80E,RQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 300µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.68 грн
10+90.48 грн
100+61.09 грн
500+45.51 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TODX2960A(F) TODX2960A(F)_datasheet_en_20160415.pdf?did=37192&prodName=TODX2960A(F)
Виробник: Toshiba Semiconductor and Storage
Description: MOD OPTICAL TXRX GP 10PIN
Packaging: Tube
Connector Type: JIS F07
Wavelength: 770nm
Mounting Type: Through Hole
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Data Rate: 10Mbps
Part Status: Not For New Designs
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SSM6J808R,LF docget.jsp?did=67689&prodName=SSM6J808R
SSM6J808R,LF
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+16.80 грн
6000+14.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6J808R,LF docget.jsp?did=67689&prodName=SSM6J808R
SSM6J808R,LF
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET, -40 V, -7 A, 0.035O
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10751 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+69.09 грн
10+41.58 грн
100+27.05 грн
500+19.50 грн
1000+17.60 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SSM6J825R,LF docget.jsp?did=141463&prodName=SSM6J825R
SSM6J825R,LF
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.31 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SSM6J825R,LF docget.jsp?did=141463&prodName=SSM6J825R
SSM6J825R,LF
Виробник: Toshiba Semiconductor and Storage
Description: P-CH MOSFET -30V, -20/+10V, -4A
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.27 грн
12+28.28 грн
100+19.26 грн
500+13.56 грн
1000+10.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TK2R9E10PL,S1X docget.jsp?did=60422&prodName=TK2R9E10PL
TK2R9E10PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 50A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.85 грн
50+150.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TK8R2E06PL,S1X docget.jsp?did=55709&prodName=TK8R2E06PL
TK8R2E06PL,S1X
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V
Power Dissipation (Max): 81W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TK15S04N1L,LXHQ docget.jsp?did=14571&prodName=TK15S04N1L
TK15S04N1L,LXHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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TK15S04N1L,LXHQ docget.jsp?did=14571&prodName=TK15S04N1L
TK15S04N1L,LXHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: DPAK+
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.04 грн
10+61.29 грн
100+40.56 грн
500+29.72 грн
1000+27.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
74HC244D 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC244D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+20.42 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
74HC244D 74HC240D_datasheet_en_20201110.pdf?did=37135&prodName=74HC240D
74HC244D
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SSM6L39TU,LF docget.jsp?did=11583&prodName=SSM6L39TU
SSM6L39TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
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SSM6L39TU,LF docget.jsp?did=11583&prodName=SSM6L39TU
SSM6L39TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
FET Feature: Logic Level Gate, 1.8V Drive
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: UF6
Part Status: Active
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.63 грн
12+27.94 грн
100+17.85 грн
500+12.66 грн
1000+11.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TK62N60W5,S1VF docget.jsp?did=15641&prodName=TK62N60W5
TK62N60W5,S1VF
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1101.96 грн
В кошику  од. на суму  грн.
TB62747AFG,C8,EL TB62747AFG_datasheet_en_20170124.pdf?did=21718&prodName=TB62747AFG
TB62747AFG,C8,EL
Виробник: Toshiba Semiconductor and Storage
Description: 16-CH CONSTANT CURRENT LED DRIVE
Packaging: Cut Tape (CT)
Package / Case: 24-SOP (0.236", 6.00mm Width)
Voltage - Output: 26V
Mounting Type: Surface Mount
Number of Outputs: 16
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Current - Output / Channel: 45mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-SSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Active
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+80.32 грн
10+55.72 грн
25+50.36 грн
100+41.69 грн
250+39.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TOTX1353(F) TOTX1353%28F%29_datasheet_en_20140520.pdf?did=14724&prodName=TOTX1353(F)
TOTX1353(F)
Виробник: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
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TK20E60W,S1VX docget.jsp?did=13839&prodName=TK20E60W
TK20E60W,S1VX
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+523.34 грн
50+271.27 грн
В кошику  од. на суму  грн.
TK25E60X5,S1X docget.jsp?did=15556&prodName=TK25E60X5
TK25E60X5,S1X
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+465.48 грн
50+238.34 грн
В кошику  од. на суму  грн.
RN1304,LXHF docget.jsp?did=18776&prodName=RN1304
RN1304,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
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RN1304,LXHF docget.jsp?did=18776&prodName=RN1304
RN1304,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+25.91 грн
22+15.38 грн
100+9.64 грн
500+6.70 грн
1000+5.94 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RN1307,LF docget.jsp?did=18778&prodName=RN1308
RN1307,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
RN1307,LF docget.jsp?did=18778&prodName=RN1308
RN1307,LF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+18.14 грн
24+14.14 грн
100+7.53 грн
500+4.64 грн
1000+3.16 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
RN1308,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1308,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
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RN1308,LXHF RN1307_datasheet_en_20210824.pdf?did=18778&prodName=RN1307
RN1308,LXHF
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SC-70
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 100 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+18.14 грн
31+10.81 грн
100+6.80 грн
500+4.72 грн
1000+4.19 грн
Мінімальне замовлення: 20
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TK10P50W,RQ docget.jsp?did=53221&prodName=TK10P50W
TK10P50W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
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TK10P50W,RQ docget.jsp?did=53221&prodName=TK10P50W
TK10P50W,RQ
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
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SSM6J401TU,LF
SSM6J401TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
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SSM6J401TU,LF
SSM6J401TU,LF
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
на замовлення 2641 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.27 грн
13+27.53 грн
100+16.48 грн
500+14.32 грн
1000+9.74 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TC4069UBF(EL,N,F) docget.jsp?did=2724&prodName=TC4069UBF
TC4069UBF(EL,N,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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TC4069UBF(EL,N,F) docget.jsp?did=2724&prodName=TC4069UBF
TC4069UBF(EL,N,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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TBD62089APG TBD62089APG_datasheet_en_20161221.pdf?did=56183&prodName=TBD62089APG
TBD62089APG
Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+248.72 грн
10+155.93 грн
100+108.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CRH02(TE85L,Q,M) CRH02_Web.pdf
CRH02(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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CRH02(TE85L,Q,M) CRH02_Web.pdf
CRH02(TE85L,Q,M)
Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+33.68 грн
17+20.37 грн
100+14.57 грн
500+10.26 грн
1000+9.15 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
TLP3073(LF1,F TLP3073_datasheet_en_20200217.pdf?did=30347&prodName=TLP3073
TLP3073(LF1,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 1mA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: No
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.95 грн
50+61.39 грн
100+56.18 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP3062A(LF1,F docget.jsp?did=30346&prodName=TLP3062A
TLP3062A(LF1,F
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Packaging: Tube
Package / Case: 6-SMD (5 Leads), Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 600µA (Typ)
Supplier Device Package: 6-SO, 5 Lead
Zero Crossing Circuit: Yes
Static dV/dt (Min): 2kV/µs (Typ)
Current - LED Trigger (Ift) (Max): 10mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 100 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 50 mA
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLP5751(D4-LF4,E TLP5751_datasheet_en_20191210.pdf?did=15366&prodName=TLP5751
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Packaging: Tube
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 1A
Technology: Optical Coupling
Current - Output High, Low: 1A, 1A
Voltage - Isolation: 5000Vrms
Approval Agency: CQC, CSA, cUL, UL, VDE
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+195.17 грн
10+122.83 грн
100+89.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
74HC74D 74HC74D_datasheet_en_20201117.pdf?did=37138&prodName=74HC74D
74HC74D
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
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74HC74D 74HC74D_datasheet_en_20201117.pdf?did=37138&prodName=74HC74D
74HC74D
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
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TLP183(GRH-TPL,E TLP183_datasheet_en_20201118.pdf?did=14417&prodName=TLP183
TLP183(GRH-TPL,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+14.47 грн
6000+13.16 грн
9000+12.77 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLP183(GRH-TPL,E TLP183_datasheet_en_20201118.pdf?did=14417&prodName=TLP183
TLP183(GRH-TPL,E
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 150% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 9217 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+42.32 грн
12+28.11 грн
100+20.17 грн
500+15.59 грн
1000+14.49 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
XPN3R804NC,L1XHQ XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC
XPN3R804NC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+37.99 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN3R804NC,L1XHQ XPN3R804NC_datasheet_en_20200624.pdf?did=68657&prodName=XPN3R804NC
XPN3R804NC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
на замовлення 14885 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.95 грн
10+89.07 грн
100+59.85 грн
500+44.42 грн
1000+40.64 грн
2000+37.47 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XPN9R614MC,L1XHQ XPN9R614MC_datasheet_en_20211208.pdf?did=65305&prodName=XPN9R614MC
XPN9R614MC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+36.73 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN9R614MC,L1XHQ XPN9R614MC_datasheet_en_20211208.pdf?did=65305&prodName=XPN9R614MC
XPN9R614MC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8792 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.49 грн
10+86.82 грн
100+58.28 грн
500+43.21 грн
1000+39.51 грн
2000+36.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
XPN7R104NC,L1XHQ docget.jsp?did=68660&prodName=XPN7R104NC
XPN7R104NC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+37.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
XPN7R104NC,L1XHQ docget.jsp?did=68660&prodName=XPN7R104NC
XPN7R104NC,L1XHQ
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
на замовлення 11842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.49 грн
10+87.32 грн
100+58.62 грн
500+43.47 грн
1000+39.76 грн
2000+36.64 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
74HC123D 74HC123D_datasheet_en_20201110.pdf?did=37293&prodName=74HC123D
74HC123D
Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+16.14 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
74HC123D 74HC123D_datasheet_en_20201110.pdf?did=37293&prodName=74HC123D
74HC123D
Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 4571 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.27 грн
14+24.62 грн
25+22.02 грн
100+17.97 грн
250+16.69 грн
500+15.91 грн
1000+15.02 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CUHS20S60,H3F docget.jsp?did=70190&prodName=CUHS20S60
CUHS20S60,H3F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
товару немає в наявності
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CUHS20S60,H3F docget.jsp?did=70190&prodName=CUHS20S60
CUHS20S60,H3F
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.82 грн
35+9.56 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
TC74AC14F(EL,F) docget.jsp?did=70724&prodName=TC74AC14F
TC74AC14F(EL,F)
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
товару немає в наявності
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TC74VHC4040F(E,K,F docget.jsp?did=18069&prodName=TC74VHC4040F
TC74VHC4040F(E,K,F
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
товару немає в наявності
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TC74VHC4040F(E,K,F docget.jsp?did=18069&prodName=TC74VHC4040F
TC74VHC4040F(E,K,F
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 12
товару немає в наявності
В кошику  од. на суму  грн.
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