Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 190 з 226
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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TK15S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAKQualification: AEC-Q101 Grade: Automotive Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TK15S04N1L,LXHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 15A DPAKQualification: AEC-Q101 Grade: Automotive FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: DPAK+ Vgs(th) (Max) @ Id: 2.5V @ 100µA Power Dissipation (Max): 46W (Tc) Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Ta) |
на замовлення 1917 шт: термін постачання 21-31 дні (днів) |
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74HC244D | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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74HC244D | Toshiba Semiconductor and Storage |
Description: IC BUFFER NON-INVERT 6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 4 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SSM6L39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.8V Drive Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6L39TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 20V 0.8A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 1V @ 1mA FET Feature: Logic Level Gate, 1.8V Drive Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 1661 шт: термін постачання 21-31 дні (днів) |
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TK62N60W5,S1VF | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO-Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 27 шт: термін постачання 21-31 дні (днів) |
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TB62747AFG,C8,EL | Toshiba Semiconductor and Storage |
Description: 16-CH CONSTANT CURRENT LED DRIVEPart Status: Active Voltage - Supply (Max): 5.5V Voltage - Supply (Min): 3V Supplier Device Package: 24-SSOP Topology: Shift Register Internal Switch(s): Yes Current - Output / Channel: 45mA Applications: LED Lighting Operating Temperature: -40°C ~ 85°C (TA) Type: Linear Number of Outputs: 16 Mounting Type: Surface Mount Voltage - Output: 26V Package / Case: 24-SOP (0.236", 6.00mm Width) Packaging: Cut Tape (CT) |
на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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TOTX1353(F) | Toshiba Semiconductor and Storage |
Description: XMITTER FIBER OPTIC 650NMPackaging: Tube Connector Type: TOSLINK Wavelength: 650nm Voltage - Forward (Vf) (Typ): 1.75V Part Status: Active Current - DC Forward (If) (Max): 30 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TK20E60W,S1VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V Power Dissipation (Max): 165W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 1mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V |
на замовлення 58 шт: термін постачання 21-31 дні (днів) |
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TK25E60X5,S1X | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 25A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.2mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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RN1304,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1304,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA |
на замовлення 2482 шт: термін постачання 21-31 дні (днів) |
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RN1307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USMDC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1307,LF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A USMCurrent - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN1308,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN1308,LXHF | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SC70Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SC-70 DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 2985 шт: термін постачання 21-31 дні (днів) |
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TK10P50W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TK10P50W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6J401TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SSM6J401TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 2.5A UF6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: UF6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V |
на замовлення 2641 шт: термін постачання 21-31 дні (днів) |
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TC4069UBF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 4V ~ 12V Input Logic Level - Low: 1V ~ 3V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC4069UBF(EL,N,F) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14SOPPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 18V Current - Output High, Low: 3.4mA, 3.4mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 4V ~ 12V Input Logic Level - Low: 1V ~ 3V Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 1 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TBD62089APG | Toshiba Semiconductor and Storage |
Description: IC PWR DRIVER N-CHAN 1:1 20DIPPackaging: Tray Package / Case: 20-DIP (0.300", 7.62mm) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 8 Switch Type: General Purpose Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Low Side Rds On (Typ): 1.6Ohm Input Type: Non-Inverting Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 500mA Ratio - Input:Output: 1:1 Supplier Device Package: 20-DIP Part Status: Active |
на замовлення 788 шт: термін постачання 21-31 дні (днів) |
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CRH02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 500MA SFLATPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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CRH02(TE85L,Q,M) | Toshiba Semiconductor and Storage |
Description: DIODE STANDARD 200V 500MA SFLATPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 500mA Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 1183 шт: термін постачання 21-31 дні (днів) |
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TLP3073(LF1,F | Toshiba Semiconductor and Storage |
Description: OPTO TRIAC COUPLER; NON-ZERO-VOLCurrent - DC Forward (If) (Max): 50 mA Voltage - Off State: 800 V Current - On State (It (RMS)) (Max): 100 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 2kV/µs (Typ) Zero Crossing Circuit: No Supplier Device Package: 6-SO, 5 Lead Current - Hold (Ih): 1mA (Typ) Approval Agency: CQC, cUR, UR Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD (5 Leads), Gull Wing Packaging: Tube |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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TLP3062A(LF1,F | Toshiba Semiconductor and Storage |
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SOCurrent - DC Forward (If) (Max): 50 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 100 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 10mA Static dV/dt (Min): 2kV/µs (Typ) Zero Crossing Circuit: Yes Supplier Device Package: 6-SO, 5 Lead Current - Hold (Ih): 600µA (Typ) Approval Agency: CQC, cUR, UR Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.15V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD (5 Leads), Gull Wing Packaging: Tube |
на замовлення 44 шт: термін постачання 21-31 дні (днів) |
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| TLP5751(D4-LF4,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 5KV 1CH GATE DVR 6SOPropagation Delay tpLH / tpHL (Max): 150ns, 150ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 15ns, 8ns Supplier Device Package: 6-SO Approval Agency: CQC, CSA, cUL, UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 1A, 1A Technology: Optical Coupling Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.55V Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tube Voltage - Output Supply: 15V ~ 30V Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 50ns |
на замовлення 125 шт: термін постачання 21-31 дні (днів) |
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74HC74D | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 67 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC74D | Toshiba Semiconductor and Storage |
Description: IC FF D-TYPE DOUBLE 1BIT 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 5.2mA, 5.2mA Trigger Type: Positive Edge Clock Frequency: 67 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF Part Status: Active Number of Bits per Element: 1 |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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TLP183(GRH-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEADPart Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 6-SOP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TLP183(GRH-TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEADSupplier Device Package: 6-SOP Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 150% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 50mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Current - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 2µs, 3µs Turn On / Turn Off Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Packaging: Cut Tape (CT) |
на замовлення 9217 шт: термін постачання 21-31 дні (днів) |
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XPN3R804NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 40A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 840mW (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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XPN3R804NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 40A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 300µA Power Dissipation (Max): 840mW (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 14885 шт: термін постачання 21-31 дні (днів) |
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XPN9R614MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A 8TSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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XPN9R614MC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 40A 8TSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 840mW (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 500µA Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 8792 шт: термін постачання 21-31 дні (днів) |
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XPN7R104NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSONTechnology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 840mW (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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XPN7R104NC,L1XHQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 20A 8TSONInput Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-TSON Advance-WF (3.1x3.1) Vgs(th) (Max) @ Id: 2.5V @ 200µA Power Dissipation (Max): 840mW (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 11842 шт: термін постачання 21-31 дні (днів) |
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74HC123D | Toshiba Semiconductor and Storage |
Description: IC MMV 2-CIR 40-NS 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 40 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC123D | Toshiba Semiconductor and Storage |
Description: IC MMV 2-CIR 40-NS 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: Monostable Operating Temperature: -40°C ~ 85°C Propagation Delay: 40 ns Independent Circuits: 2 Current - Output High, Low: 5.2mA, 5.2mA Schmitt Trigger Input: Yes Supplier Device Package: 16-SOIC Part Status: Active Voltage - Supply: 2 V ~ 6 V |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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CUHS20S60,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 2A US2HPackaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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CUHS20S60,H3F | Toshiba Semiconductor and Storage |
Description: DIODE SCHOTTKY 60V 2A US2HCurrent - Reverse Leakage @ Vr: 650 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: US2H Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 290pF @ 0V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Leads Packaging: Cut Tape (CT) |
на замовлення 2456 шт: термін постачання 21-31 дні (днів) |
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TC74AC14F(EL,F) | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 6CH 6IN 14SOPPackaging: Cut Tape (CT) Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
на замовлення 1814 шт: термін постачання 21-31 дні (днів) |
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TC74VHC4040F(E,K,F | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12-BIT 16SOPNumber of Elements: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 85°C Reset: Asynchronous Logic Type: Binary Counter Number of Bits per Element: 12 Count Rate: 125 MHz Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 16-SOP |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC74VHC4040F(E,K,F | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12-BIT 16SOPNumber of Bits per Element: 12 Count Rate: 125 MHz Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 16-SOP Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 85°C Reset: Asynchronous Logic Type: Binary Counter Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TC74VHC4040FK(EL,K | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12BIT 16VSSOP Number of Bits per Element: 12 Count Rate: 125 MHz Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 16-VSSOP Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 85°C Reset: Asynchronous Logic Type: Binary Counter Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TC74VHC4040FK(EL,K | Toshiba Semiconductor and Storage |
Description: IC BINARY COUNTER 12BIT 16VSSOP Number of Bits per Element: 12 Count Rate: 125 MHz Voltage - Supply: 2 V ~ 5.5 V Part Status: Active Supplier Device Package: 16-VSSOP Trigger Type: Negative Edge Direction: Up Operating Temperature: -40°C ~ 85°C Reset: Asynchronous Logic Type: Binary Counter Number of Elements: 1 Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC540D | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/6V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC540D | Toshiba Semiconductor and Storage |
Description: IC BUFF 2V/6V 20-SOICPackaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 8 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 20-SOIC Part Status: Active |
на замовлення 762 шт: термін постачання 21-31 дні (днів) |
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| TLP750(PPA,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.65V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 10% @ 16mA Supplier Device Package: 8-DIP Part Status: Last Time Buy Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(PP,F) | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLER Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Last Time Buy Supplier Device Package: 8-DIP Current Transfer Ratio (Min): 10% @ 16mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4-COS-F2,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Last Time Buy Turn On / Turn Off Time (Typ): 200ns, 1µs Voltage - Output (Max): 15V Supplier Device Package: 8-DIP Current Transfer Ratio (Min): 10% @ 16mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TLP750(D4COS-TP5,F | Toshiba Semiconductor and Storage |
Description: PHOTOCOUPLERCurrent - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Last Time Buy Turn On / Turn Off Time (Typ): 200ns, 1µs Voltage - Output (Max): 15V Supplier Device Package: 8-DIP Current Transfer Ratio (Min): 10% @ 16mA Voltage - Isolation: 5000Vrms Current - Output / Channel: 8mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.65V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Transistor with Base Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLP291(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Tape & Reel (TR) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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TLP291(V4GBTP,SE | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SOPackaging: Cut Tape (CT) Package / Case: 4-SOIC (0.179", 4.55mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-SO Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 2µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
на замовлення 8072 шт: термін постачання 21-31 дні (днів) |
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TLP3914(TP15,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP Voltage - Isolation: 1500Vrms Current - Output / Channel: 20µA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Photovoltaic Package / Case: 4-SMD, Flat Leads Packaging: Tape & Reel (TR) Current - DC Forward (If) (Max): 30 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 300µs, 600µs Voltage - Output (Max): 7V Supplier Device Package: 4-SSOP |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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TLP3914(TP15,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP Supplier Device Package: 4-SSOP Voltage - Isolation: 1500Vrms Current - Output / Channel: 20µA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Output Type: Photovoltaic Package / Case: 4-SMD, Flat Leads Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 30 mA Number of Channels: 1 Part Status: Active Turn On / Turn Off Time (Typ): 300µs, 600µs Voltage - Output (Max): 7V |
на замовлення 1873 шт: термін постачання 21-31 дні (днів) |
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TLP3910(D4C20TPE | Toshiba Semiconductor and Storage |
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;Turn On / Turn Off Time (Typ): 300µs, 100µs Voltage - Output (Max): 24V Supplier Device Package: 6-SO Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 3.3V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Photovoltaic Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 30 mA Number of Channels: 2 Part Status: Active |
на замовлення 979 шт: термін постачання 21-31 дні (днів) |
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TLP3910(D4-TP,E | Toshiba Semiconductor and Storage |
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;Current - DC Forward (If) (Max): 30 mA Number of Channels: 2 Part Status: Active Turn On / Turn Off Time (Typ): 300µs, 100µs Voltage - Output (Max): 24V Supplier Device Package: 6-SO Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 3.3V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Photovoltaic Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| TK15S04N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TK15S04N1L,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Description: MOSFET N-CH 40V 15A DPAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DPAK+
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 17.8mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
на замовлення 1917 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.77 грн |
| 10+ | 56.27 грн |
| 100+ | 37.24 грн |
| 500+ | 27.29 грн |
| 1000+ | 24.82 грн |
| 74HC244D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 18.93 грн |
| 74HC244D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFFER NON-INVERT 6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| SSM6L39TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6L39TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 20V 0.8A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 1V @ 1mA
FET Feature: Logic Level Gate, 1.8V Drive
Rds On (Max) @ Id, Vgs: 143mOhm @ 600MA, 4V
Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 1661 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.82 грн |
| 12+ | 25.66 грн |
| 100+ | 16.39 грн |
| 500+ | 11.62 грн |
| 1000+ | 10.41 грн |
| TK62N60W5,S1VF |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: PB-F POWER MOSFET TRANSISTOR TO-
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 27 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1011.78 грн |
| TB62747AFG,C8,EL |
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Виробник: Toshiba Semiconductor and Storage
Description: 16-CH CONSTANT CURRENT LED DRIVE
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SSOP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 45mA
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 26V
Package / Case: 24-SOP (0.236", 6.00mm Width)
Packaging: Cut Tape (CT)
Description: 16-CH CONSTANT CURRENT LED DRIVE
Part Status: Active
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 3V
Supplier Device Package: 24-SSOP
Topology: Shift Register
Internal Switch(s): Yes
Current - Output / Channel: 45mA
Applications: LED Lighting
Operating Temperature: -40°C ~ 85°C (TA)
Type: Linear
Number of Outputs: 16
Mounting Type: Surface Mount
Voltage - Output: 26V
Package / Case: 24-SOP (0.236", 6.00mm Width)
Packaging: Cut Tape (CT)
на замовлення 443 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 51.16 грн |
| 25+ | 46.24 грн |
| 100+ | 38.28 грн |
| 250+ | 35.85 грн |
| TOTX1353(F) |
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Виробник: Toshiba Semiconductor and Storage
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
Description: XMITTER FIBER OPTIC 650NM
Packaging: Tube
Connector Type: TOSLINK
Wavelength: 650nm
Voltage - Forward (Vf) (Typ): 1.75V
Part Status: Active
Current - DC Forward (If) (Max): 30 mA
товару немає в наявності
В кошику
од. на суму грн.
| TK20E60W,S1VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 1mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 300 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 480.51 грн |
| 50+ | 249.07 грн |
| TK25E60X5,S1X |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 417.87 грн |
| 50+ | 213.86 грн |
| RN1304,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1304,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
на замовлення 2482 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.79 грн |
| 22+ | 14.13 грн |
| 100+ | 8.85 грн |
| 500+ | 6.15 грн |
| 1000+ | 5.45 грн |
| RN1307,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
Description: TRANS PREBIAS NPN 50V 0.1A USM
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 2.89 грн |
| RN1307,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A USM
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Description: TRANS PREBIAS NPN 50V 0.1A USM
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.65 грн |
| 24+ | 12.98 грн |
| 100+ | 6.91 грн |
| 500+ | 4.26 грн |
| 1000+ | 2.90 грн |
| RN1308,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN1308,LXHF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 50V 0.1A SC70
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SC-70
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 2985 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 16.65 грн |
| 31+ | 9.93 грн |
| 100+ | 6.25 грн |
| 500+ | 4.34 грн |
| 1000+ | 3.85 грн |
| TK10P50W,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| TK10P50W,RQ |
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Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
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В кошику
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| SSM6J401TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SSM6J401TU,LF |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: UF6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 15 V
на замовлення 2641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.30 грн |
| 13+ | 25.27 грн |
| 100+ | 15.13 грн |
| 500+ | 13.15 грн |
| 1000+ | 8.94 грн |
| TC4069UBF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
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| TC4069UBF(EL,N,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 6CH 1-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 18V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 4V ~ 12V
Input Logic Level - Low: 1V ~ 3V
Max Propagation Delay @ V, Max CL: 50ns @ 15V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
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| TBD62089APG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
Description: IC PWR DRIVER N-CHAN 1:1 20DIP
Packaging: Tray
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.6Ohm
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 20-DIP
Part Status: Active
на замовлення 788 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 227.57 грн |
| 10+ | 142.63 грн |
| 100+ | 99.36 грн |
| CRH02(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CRH02(TE85L,Q,M) |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 500MA SFLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 1183 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 30.92 грн |
| 17+ | 18.71 грн |
| 100+ | 13.38 грн |
| 500+ | 9.42 грн |
| 1000+ | 8.41 грн |
| TLP3073(LF1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 1mA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tube
Description: OPTO TRIAC COUPLER; NON-ZERO-VOL
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 800 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: No
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 1mA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tube
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 116.56 грн |
| 50+ | 56.37 грн |
| 100+ | 51.58 грн |
| TLP3062A(LF1,F |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tube
Description: OPTOISOLATOR 5KV TRIAC 1CH 6-SO
Current - DC Forward (If) (Max): 50 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 100 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 10mA
Static dV/dt (Min): 2kV/µs (Typ)
Zero Crossing Circuit: Yes
Supplier Device Package: 6-SO, 5 Lead
Current - Hold (Ih): 600µA (Typ)
Approval Agency: CQC, cUR, UR
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.15V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD (5 Leads), Gull Wing
Packaging: Tube
на замовлення 44 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 106.25 грн |
| TLP5751(D4-LF4,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
Description: OPTOISO 5KV 1CH GATE DVR 6SO
Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 15ns, 8ns
Supplier Device Package: 6-SO
Approval Agency: CQC, CSA, cUL, UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 1A, 1A
Technology: Optical Coupling
Current - Peak Output: 1A
Voltage - Forward (Vf) (Typ): 1.55V
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Voltage - Output Supply: 15V ~ 30V
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 50ns
на замовлення 125 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 179.20 грн |
| 10+ | 112.78 грн |
| 100+ | 82.38 грн |
| 74HC74D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
товару немає в наявності
В кошику
од. на суму грн.
| 74HC74D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
Description: IC FF D-TYPE DOUBLE 1BIT 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 67 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 26ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 1
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| TLP183(GRH-TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 13.28 грн |
| 6000+ | 12.09 грн |
| 9000+ | 11.72 грн |
| TLP183(GRH-TPL,E |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Packaging: Cut Tape (CT)
Description: OPTOISO 3.75KV TRANS 6-SO 4 LEAD
Supplier Device Package: 6-SOP
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 150% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Packaging: Cut Tape (CT)
на замовлення 9217 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 38.85 грн |
| 12+ | 25.81 грн |
| 100+ | 18.52 грн |
| 500+ | 14.31 грн |
| 1000+ | 13.30 грн |
| XPN3R804NC,L1XHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 34.88 грн |
| XPN3R804NC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 40A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 14885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.00 грн |
| 10+ | 81.78 грн |
| 100+ | 54.95 грн |
| 500+ | 40.79 грн |
| 1000+ | 37.32 грн |
| 2000+ | 34.40 грн |
| XPN9R614MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 33.72 грн |
| XPN9R614MC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 40A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 840mW (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 500µA
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 10 V
Qualification: AEC-Q101
на замовлення 8792 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.83 грн |
| 10+ | 79.72 грн |
| 100+ | 53.51 грн |
| 500+ | 39.67 грн |
| 1000+ | 36.28 грн |
| 2000+ | 33.43 грн |
| XPN7R104NC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 40V 20A 8TSON
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 33.98 грн |
| XPN7R104NC,L1XHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 20A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 20A 8TSON
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 200µA
Power Dissipation (Max): 840mW (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 11842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.83 грн |
| 10+ | 80.17 грн |
| 100+ | 53.82 грн |
| 500+ | 39.92 грн |
| 1000+ | 36.51 грн |
| 2000+ | 33.64 грн |
| 74HC123D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| 74HC123D |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Description: IC MMV 2-CIR 40-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 40 ns
Independent Circuits: 2
Current - Output High, Low: 5.2mA, 5.2mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.30 грн |
| 14+ | 22.98 грн |
| CUHS20S60,H3F |
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Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A US2H
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: US2H
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| CUHS20S60,H3F |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 60V 2A US2H
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 2A US2H
Current - Reverse Leakage @ Vr: 650 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: US2H
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 290pF @ 0V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Leads
Packaging: Cut Tape (CT)
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 12.69 грн |
| 35+ | 8.78 грн |
| TC74AC14F(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
на замовлення 1814 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 31.72 грн |
| 15+ | 21.53 грн |
| 25+ | 19.21 грн |
| 100+ | 15.65 грн |
| 250+ | 14.51 грн |
| 500+ | 13.82 грн |
| 1000+ | 13.12 грн |
| TC74VHC4040F(E,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-SOP
Description: IC BINARY COUNTER 12-BIT 16SOP
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-SOP
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Мінімальне замовлення: 2000 шт
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| TC74VHC4040F(E,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12-BIT 16SOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-SOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC BINARY COUNTER 12-BIT 16SOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-SOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
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| TC74VHC4040FK(EL,K |
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12BIT 16VSSOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-VSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC BINARY COUNTER 12BIT 16VSSOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-VSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
В кошику
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| TC74VHC4040FK(EL,K |
Виробник: Toshiba Semiconductor and Storage
Description: IC BINARY COUNTER 12BIT 16VSSOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-VSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC BINARY COUNTER 12BIT 16VSSOP
Number of Bits per Element: 12
Count Rate: 125 MHz
Voltage - Supply: 2 V ~ 5.5 V
Part Status: Active
Supplier Device Package: 16-VSSOP
Trigger Type: Negative Edge
Direction: Up
Operating Temperature: -40°C ~ 85°C
Reset: Asynchronous
Logic Type: Binary Counter
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: 16-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
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| 74HC540D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
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| 74HC540D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
Description: IC BUFF 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
на замовлення 762 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 45.99 грн |
| 10+ | 31.46 грн |
| 25+ | 28.25 грн |
| 100+ | 23.18 грн |
| 250+ | 21.59 грн |
| 500+ | 20.63 грн |
| TLP750(PPA,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Description: PHOTOCOUPLER
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 10% @ 16mA
Supplier Device Package: 8-DIP
Part Status: Last Time Buy
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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| TLP750(PP,F) |
Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
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| TLP750(D4-COS-F2,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Turn On / Turn Off Time (Typ): 200ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Turn On / Turn Off Time (Typ): 200ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
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| TLP750(D4COS-TP5,F |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Turn On / Turn Off Time (Typ): 200ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
Description: PHOTOCOUPLER
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Last Time Buy
Turn On / Turn Off Time (Typ): 200ns, 1µs
Voltage - Output (Max): 15V
Supplier Device Package: 8-DIP
Current Transfer Ratio (Min): 10% @ 16mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 8mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.65V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Bulk
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| TLP291(V4GBTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 11.40 грн |
| 5000+ | 10.34 грн |
| 7500+ | 10.02 грн |
| TLP291(V4GBTP,SE |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISOLTR 3.75KV 1CH TRANS 4-SO
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.179", 4.55mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SO
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
на замовлення 8072 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.30 грн |
| 14+ | 21.99 грн |
| 100+ | 15.73 грн |
| 500+ | 12.12 грн |
| 1000+ | 11.25 грн |
| TLP3914(TP15,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP
Voltage - Isolation: 1500Vrms
Current - Output / Channel: 20µA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 600µs
Voltage - Output (Max): 7V
Supplier Device Package: 4-SSOP
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP
Voltage - Isolation: 1500Vrms
Current - Output / Channel: 20µA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 4-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 600µs
Voltage - Output (Max): 7V
Supplier Device Package: 4-SSOP
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 134.08 грн |
| TLP3914(TP15,F) |
Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP
Supplier Device Package: 4-SSOP
Voltage - Isolation: 1500Vrms
Current - Output / Channel: 20µA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 600µs
Voltage - Output (Max): 7V
Description: OPTOISO 1.5KV 1CH PHVOLT 4-SSOP
Supplier Device Package: 4-SSOP
Voltage - Isolation: 1500Vrms
Current - Output / Channel: 20µA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 4-SMD, Flat Leads
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 600µs
Voltage - Output (Max): 7V
на замовлення 1873 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 279.11 грн |
| 10+ | 198.37 грн |
| 100+ | 156.48 грн |
| 500+ | 129.64 грн |
| TLP3910(D4C20TPE |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.46 грн |
| 10+ | 162.94 грн |
| 100+ | 133.48 грн |
| 500+ | 105.60 грн |
| TLP3910(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.




























