Продукція > TOSHIBA SEMICONDUCTOR AND STORAGE > Всі товари виробника TOSHIBA SEMICONDUCTOR AND STORAGE (13548) > Сторінка 191 з 226
| Фото | Назва | Виробник | Інформація |
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TLP3910(D4-TP,E | Toshiba Semiconductor and Storage |
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;Current - DC Forward (If) (Max): 30 mA Number of Channels: 2 Part Status: Active Turn On / Turn Off Time (Typ): 300µs, 100µs Voltage - Output (Max): 24V Supplier Device Package: 6-SO Voltage - Isolation: 5000Vrms Input Type: DC Voltage - Forward (Vf) (Typ): 3.3V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Photovoltaic Package / Case: 6-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
на замовлення 1410 шт: термін постачання 21-31 дні (днів) |
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TPCP8107,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 40V 8A PS-8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PS-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): +10V, -20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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TC74AC14F(EL,F) | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 6CH 6IN 14SOPPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 6 Supplier Device Package: 14-SOP Input Logic Level - High: 2.2V ~ 3.9V Input Logic Level - Low: 0.5V ~ 1.1V Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 4 µA |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 92A/70A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TPH4R10ANL,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 92A/70A 8SOPInput Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOP Advance (5x5) Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.5W (Ta), 67W (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 7196 шт: термін постачання 21-31 дні (днів) |
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74VHCT08AFT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14TSSOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 4 Part Status: Active Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.8V Input Logic Level - High: 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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74VHCT08AFT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 4CH 2-INP 14TSSOPMax Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Input Logic Level - Low: 0.8V Input Logic Level - High: 2V Supplier Device Package: 14-TSSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - Quiescent (Max): 2 µA Number of Circuits: 4 Part Status: Active |
на замовлення 680 шт: термін постачання 21-31 дні (днів) |
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GT50JR21(STA1,E,S) | Toshiba Semiconductor and Storage |
Description: IGBT 600V 50A TO-3PPower - Max: 230 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 50 A Part Status: Active Supplier Device Package: TO-3P(N) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Input Type: Standard Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
на замовлення 24 шт: термін постачання 21-31 дні (днів) |
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TLP2358(TPL,E) | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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TLP2358(TPL,E) | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
на замовлення 14549 шт: термін постачання 21-31 дні (днів) |
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RN4910,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4910,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNQualification: AEC-Q101 Grade: Automotive Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: US6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RN4906,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN4906,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNPart Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz, 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Qualification: AEC-Q101 Grade: Automotive Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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RN2906,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNVce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 200mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: US6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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RN2906,LXHF(CT | Toshiba Semiconductor and Storage |
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PNPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 200mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: US6 Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
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TLP352F(D4,F) | Toshiba Semiconductor and Storage |
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.55V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 3750Vrms Approval Agency: CSA, cUL, UL, VDE Supplier Device Package: 8-DIP Rise / Fall Time (Typ): 15ns, 8ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 50ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA Voltage - Output Supply: 15V ~ 30V |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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TLP267J(TPR,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F TRIAC COUPLER LOW TRIGGPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 200µA (Typ) Turn On Time: 100µs Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 3mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLP267J(TPR,E | Toshiba Semiconductor and Storage |
Description: X36 PB-F TRIAC COUPLER LOW TRIGGPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads Output Type: Triac Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.27V Voltage - Isolation: 3750Vrms Approval Agency: CQC, cUR, UR Current - Hold (Ih): 200µA (Typ) Turn On Time: 100µs Supplier Device Package: 6-SOP Zero Crossing Circuit: No Static dV/dt (Min): 500V/µs (Typ) Current - LED Trigger (Ift) (Max): 3mA Part Status: Active Number of Channels: 1 Current - On State (It (RMS)) (Max): 70 mA Voltage - Off State: 600 V Current - DC Forward (If) (Max): 30 mA |
на замовлення 4714 шт: термін постачання 21-31 дні (днів) |
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74HC4049D | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERTING 6V 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOIC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74HC4049D | Toshiba Semiconductor and Storage |
Description: IC BUFFER INVERTING 6V 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 6 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 7.8mA, 7.8mA Supplier Device Package: 16-SOIC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DF3D36FU,LXHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 28VWM 60VC SC70Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 60V Voltage - Breakdown (Min): 32V Bidirectional Channels: 2 Supplier Device Package: SC-70 Voltage - Reverse Standoff (Typ): 28V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 6.5pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF3D36FU,LXHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 28VWM 60VC SC70Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 150W Voltage - Clamping (Max) @ Ipp: 60V Voltage - Breakdown (Min): 32V Bidirectional Channels: 2 Supplier Device Package: SC-70 Voltage - Reverse Standoff (Typ): 28V (Max) Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Capacitance @ Frequency: 6.5pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5964 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LXHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC SC70Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-70 Voltage - Reverse Standoff (Typ): 24V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Part Status: Active Power Line Protection: No Power - Peak Pulse: 140W Voltage - Clamping (Max) @ Ipp: 47V Voltage - Breakdown (Min): 26V Bidirectional Channels: 2 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DF3D29FU,LXHF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 24VWM 47VC SC70Qualification: AEC-Q101 Grade: Automotive Part Status: Active Power Line Protection: No Power - Peak Pulse: 140W Voltage - Clamping (Max) @ Ipp: 47V Voltage - Breakdown (Min): 26V Bidirectional Channels: 2 Supplier Device Package: SC-70 Voltage - Reverse Standoff (Typ): 24V (Max) Current - Peak Pulse (10/1000µs): 3A (8/20µs) Capacitance @ Frequency: 9pF @ 1MHz Operating Temperature: 150°C (TJ) Type: Zener Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 5493 шт: термін постачання 21-31 дні (днів) |
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TLP2355(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
на замовлення 74800 шт: термін постачання 21-31 дні (днів) |
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TLP2355(TPL,E | Toshiba Semiconductor and Storage |
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SOPackaging: Cut Tape (CT) Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 20V Voltage - Forward (Vf) (Typ): 1.55V Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 6-SO, 5 Lead Rise / Fall Time (Typ): 15ns, 12ns Common Mode Transient Immunity (Min): 25kV/µs Propagation Delay tpLH / tpHL (Max): 250ns, 250ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 25 mA |
на замовлення 74990 шт: термін постачання 21-31 дні (днів) |
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74LCX245FT | Toshiba Semiconductor and Storage |
Description: IC TXRX 1.65V/3.6V 20-TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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74LCX245FT | Toshiba Semiconductor and Storage |
Description: IC TXRX 1.65V/3.6V 20-TSSOPPart Status: Active Supplier Device Package: 20-TSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
на замовлення 3580 шт: термін постачання 21-31 дні (днів) |
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TC74LCX245FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC TXRX 1.65V/3.6V 20-VSSOPPart Status: Active Supplier Device Package: 20-VSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-VFSOP (0.118", 3.00mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC74LCX245FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC TXRX 1.65V/3.6V 20-VSSOPPackage / Case: 20-VFSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 20-VSSOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TC74LCX245F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC TXRX NON-INVERT 3.6V 20SOPOperating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SOIC (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 20-SOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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TC74LCX245F(EL,K,F | Toshiba Semiconductor and Storage |
Description: IC TXRX NON-INVERT 3.6V 20SOPPart Status: Active Supplier Device Package: 20-SOP Current - Output High, Low: 24mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SOIC (0.209", 5.30mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RN1101,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMResistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RN1101,LXHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A SSMResistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 250 MHz Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SSM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 8939 шт: термін постачання 21-31 дні (днів) |
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RN1101MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Qualification: AEC-Q101 Grade: Automotive Package / Case: SOT-723 Packaging: Tape & Reel (TR) |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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RN1101MFV,L3XHF(CT | Toshiba Semiconductor and Storage |
Description: TRANS PREBIAS NPN 50V 0.1A VESMResistors Included: R1 and R2 Resistor - Emitter Base (R2): 4.7 kOhms Resistor - Base (R1): 4.7 kOhms Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: VESM DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SOT-723 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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TK12A60W,S4VX | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 11.5A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 600µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V |
на замовлення 50 шт: термін постачання 21-31 дні (днів) |
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| TK13P25D,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 96W (Tc) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| TK13P25D,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 1mA Power Dissipation (Max): 96W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V |
на замовлення 2398 шт: термін постачання 21-31 дні (днів) |
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| 2SC6000(TE16L1,NQ) | Toshiba Semiconductor and Storage |
Description: 2SC6000(TE16L1,NQ) Power - Max: 20 W Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 7 A Part Status: Active Supplier Device Package: PW-MOLD DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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XPQ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 1.0MOHMQualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Packaging: Tape & Reel (TR) Supplier Device Package: L-TOGL™ Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPQ1R004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 1.0MOHMInput Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: L-TOGL™ Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerBSFN Vgs(th) (Max) @ Id: 3V @ 500µA Power Dissipation (Max): 230W (Tc) Packaging: Cut Tape (CT) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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XPQR3004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 0.3MOHMPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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XPQR3004PB,LXHQ | Toshiba Semiconductor and Storage |
Description: 40V U-MOS IX-H L-TOGL 0.3MOHMPackaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400A (Ta) Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V Power Dissipation (Max): 750W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: L-TOGL™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1823 шт: термін постачання 21-31 дні (днів) |
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74VHC04FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPBPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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74VHC04FT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOPBPackaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOPB Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
на замовлення 5115 шт: термін постачання 21-31 дні (днів) |
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TC74VHC04FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14VSSOP Packaging: Tape & Reel (TR) Current - Quiescent (Max): 2 µA Number of Circuits: 6 Part Status: Active Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Supplier Device Package: 14-VSSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-VFSOP (0.118", 3.00mm Width) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TC74VHC04FK(EL,K) | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14VSSOP Current - Quiescent (Max): 2 µA Number of Circuits: 6 Part Status: Active Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Supplier Device Package: 14-VSSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 14-VFSOP (0.118", 3.00mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SSM6L40TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 1.6A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 500mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Tape & Reel (TR) |
на замовлення 93000 шт: термін постачання 21-31 дні (днів) |
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SSM6L40TU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N/P-CH 30V 1.6A UF6Part Status: Active Supplier Device Package: UF6 Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA FET Feature: Logic Level Gate, 4V Drive Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Power - Max: 500mW (Ta) |
на замовлення 94343 шт: термін постачання 21-31 дні (днів) |
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TC7SET14FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1INP 5SSOPCurrent - Quiescent (Max): 2 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Input Logic Level - Low: 0.5V ~ 0.6V Input Logic Level - High: 1.9V ~ 2.1V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Tape & Reel (TR) |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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TC7SET14FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC INVERT SCHMITT 1CH 1INP 5SSOPInput Logic Level - Low: 0.5V ~ 0.6V Input Logic Level - High: 1.9V ~ 2.1V Supplier Device Package: 5-SSOP Number of Inputs: 1 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Features: Schmitt Trigger Packaging: Cut Tape (CT) Current - Quiescent (Max): 2 µA Number of Circuits: 1 Part Status: Active Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF |
на замовлення 12770 шт: термін постачання 21-31 дні (днів) |
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HN1C01FE-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A ES6Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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HN1C01FE-GR,LF | Toshiba Semiconductor and Storage |
Description: TRANS 2NPN 50V 0.15A ES6Part Status: Active Supplier Device Package: ES6 Frequency - Transition: 80MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 150mA Power - Max: 100mW Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 2848 шт: термін постачання 21-31 дні (днів) |
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TB67H400AHG | Toshiba Semiconductor and Storage |
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIPPackaging: Tube Package / Case: 25-SIP Formed Leads Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 6A Interface: Parallel, PWM Operating Temperature: -20°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 4.75V ~ 5.25V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 10V ~ 47V Supplier Device Package: 25-HZIP Motor Type - AC, DC: Brushed DC Part Status: Active |
на замовлення 397 шт: термін постачання 21-31 дні (днів) |
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TC7WH08FU,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 2CH 2-INP 8SSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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2SC6042,T2HOSH1Q(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 375V 1A MSTMPackaging: Bulk Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: MSTM Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC6042,T2WNLQ(J | Toshiba Semiconductor and Storage |
Description: TRANS NPN 375V 1A MSTMPackaging: Bulk Package / Case: SC-71 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: MSTM Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| 2SC6142(Q) | Toshiba Semiconductor and Storage |
Description: TRANS NPN 375V 1.5A PW-MOLD2Packaging: Box Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA Current - Collector Cutoff (Max): 50µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Supplier Device Package: PW-MOLD2 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 375 V Power - Max: 1.1 W |
товару немає в наявності |
В кошику од. на суму грн. |
| TLP3910(D4-TP,E |
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Виробник: Toshiba Semiconductor and Storage
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: PHOTOVOLTAIC COUPLER; HIGH VOC;
Current - DC Forward (If) (Max): 30 mA
Number of Channels: 2
Part Status: Active
Turn On / Turn Off Time (Typ): 300µs, 100µs
Voltage - Output (Max): 24V
Supplier Device Package: 6-SO
Voltage - Isolation: 5000Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 3.3V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Photovoltaic
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
на замовлення 1410 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 239.46 грн |
| 10+ | 162.94 грн |
| 100+ | 133.48 грн |
| 500+ | 105.60 грн |
| TPCP8107,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 40V 8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 8A PS-8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PS-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 44.44 грн |
| 100+ | 29.16 грн |
| 500+ | 21.18 грн |
| 1000+ | 19.18 грн |
| TC74AC14F(EL,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 4 µA
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TPH4R10ANL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5000+ | 45.71 грн |
| TPH4R10ANL,L1Q |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 92A/70A 8SOP
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 7196 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 100.87 грн |
| 100+ | 68.79 грн |
| 500+ | 51.67 грн |
| 1000+ | 50.57 грн |
| 74VHCT08AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE AND 4CH 2-INP 14TSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 74VHCT08AFT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 4CH 2-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
Description: IC GATE AND 4CH 2-INP 14TSSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Input Logic Level - Low: 0.8V
Input Logic Level - High: 2V
Supplier Device Package: 14-TSSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 4
Part Status: Active
на замовлення 680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.82 грн |
| 24+ | 12.75 грн |
| 28+ | 11.30 грн |
| 100+ | 9.11 грн |
| 250+ | 8.40 грн |
| 500+ | 7.97 грн |
| GT50JR21(STA1,E,S) |
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Виробник: Toshiba Semiconductor and Storage
Description: IGBT 600V 50A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: IGBT 600V 50A TO-3P
Power - Max: 230 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Supplier Device Package: TO-3P(N)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Input Type: Standard
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 444.83 грн |
| TLP2358(TPL,E) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 28.07 грн |
| 6000+ | 25.79 грн |
| 9000+ | 25.16 грн |
| TLP2358(TPL,E) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 14549 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 50.17 грн |
| 100+ | 37.15 грн |
| 500+ | 29.43 грн |
| 1000+ | 27.65 грн |
| RN4910,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.97 грн |
| RN4910,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: US6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.03 грн |
| RN4906,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN4906,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Qualification: AEC-Q101
Grade: Automotive
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 26.96 грн |
| 19+ | 16.19 грн |
| 100+ | 10.15 грн |
| 500+ | 7.08 грн |
| 1000+ | 6.28 грн |
| RN2906,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 200mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: US6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RN2906,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: AUTO AEC-Q 2-IN-1 (POINT-SYM) PN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: US6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.03 грн |
| 26+ | 12.06 грн |
| 100+ | 8.10 грн |
| 500+ | 5.85 грн |
| 1000+ | 5.26 грн |
| TLP352F(D4,F) |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 3.75KV 1CH GATE DVR 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.55V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 3750Vrms
Approval Agency: CSA, cUL, UL, VDE
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 15ns, 8ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 50ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Voltage - Output Supply: 15V ~ 30V
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.04 грн |
| 50+ | 73.58 грн |
| TLP267J(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 23.03 грн |
| TLP267J(TPR,E |
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Виробник: Toshiba Semiconductor and Storage
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
Description: X36 PB-F TRIAC COUPLER LOW TRIGG
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.27V
Voltage - Isolation: 3750Vrms
Approval Agency: CQC, cUR, UR
Current - Hold (Ih): 200µA (Typ)
Turn On Time: 100µs
Supplier Device Package: 6-SOP
Zero Crossing Circuit: No
Static dV/dt (Min): 500V/µs (Typ)
Current - LED Trigger (Ift) (Max): 3mA
Part Status: Active
Number of Channels: 1
Current - On State (It (RMS)) (Max): 70 mA
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 30 mA
на замовлення 4714 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 47.04 грн |
| 100+ | 32.08 грн |
| 500+ | 24.59 грн |
| 1000+ | 22.89 грн |
| 74HC4049D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| 74HC4049D |
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Виробник: Toshiba Semiconductor and Storage
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
Description: IC BUFFER INVERTING 6V 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 16-SOIC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| DF3D36FU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC SC70
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
Description: TVS DIODE 28VWM 60VC SC70
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q101
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.83 грн |
| DF3D36FU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 28VWM 60VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 28VWM 60VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 150W
Voltage - Clamping (Max) @ Ipp: 60V
Voltage - Breakdown (Min): 32V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 28V (Max)
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 34.10 грн |
| 15+ | 21.38 грн |
| 100+ | 13.09 грн |
| 500+ | 10.25 грн |
| 1000+ | 8.60 грн |
| DF3D29FU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 7.89 грн |
| DF3D29FU,LXHF |
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Виробник: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: TVS DIODE 24VWM 47VC SC70
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 140W
Voltage - Clamping (Max) @ Ipp: 47V
Voltage - Breakdown (Min): 26V
Bidirectional Channels: 2
Supplier Device Package: SC-70
Voltage - Reverse Standoff (Typ): 24V (Max)
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Capacitance @ Frequency: 9pF @ 1MHz
Operating Temperature: 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 5493 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.82 грн |
| 25+ | 12.37 грн |
| 100+ | 8.85 грн |
| 500+ | 6.67 грн |
| TLP2355(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 74800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 28.07 грн |
| 6000+ | 25.79 грн |
| 9000+ | 25.16 грн |
| 15000+ | 22.94 грн |
| 21000+ | 22.54 грн |
| TLP2355(TPL,E |
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Виробник: Toshiba Semiconductor and Storage
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
Description: OPTOISOLTR 3.75KV PUSH PULL 6-SO
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 20V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO, 5 Lead
Rise / Fall Time (Typ): 15ns, 12ns
Common Mode Transient Immunity (Min): 25kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 25 mA
на замовлення 74990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 73.74 грн |
| 10+ | 50.17 грн |
| 100+ | 37.15 грн |
| 500+ | 29.43 грн |
| 1000+ | 27.65 грн |
| 74LCX245FT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 10.85 грн |
| 74LCX245FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: IC TXRX 1.65V/3.6V 20-TSSOP
Part Status: Active
Supplier Device Package: 20-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
на замовлення 3580 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 25.37 грн |
| 19+ | 16.95 грн |
| 25+ | 15.06 грн |
| 100+ | 12.22 грн |
| 250+ | 11.30 грн |
| 500+ | 10.75 грн |
| 1000+ | 10.12 грн |
| TC74LCX245FK(EL,K) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 17.98 грн |
| TC74LCX245FK(EL,K) |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Description: IC TXRX 1.65V/3.6V 20-VSSOP
Package / Case: 20-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 20-VSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.44 грн |
| 12+ | 27.18 грн |
| 25+ | 24.34 грн |
| 100+ | 19.91 грн |
| 250+ | 18.52 грн |
| 500+ | 17.67 грн |
| 1000+ | 16.97 грн |
| TC74LCX245F(EL,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Description: IC TXRX NON-INVERT 3.6V 20SOP
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| TC74LCX245F(EL,K,F |
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Виробник: Toshiba Semiconductor and Storage
Description: IC TXRX NON-INVERT 3.6V 20SOP
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
Description: IC TXRX NON-INVERT 3.6V 20SOP
Part Status: Active
Supplier Device Package: 20-SOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RN1101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.84 грн |
| 6000+ | 3.36 грн |
| RN1101,LXHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A SSM
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 250 MHz
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SSM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 8939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 23+ | 14.27 грн |
| 33+ | 9.47 грн |
| 100+ | 6.33 грн |
| 500+ | 4.55 грн |
| 1000+ | 4.08 грн |
| RN1101MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8000+ | 3.33 грн |
| 16000+ | 2.91 грн |
| 24000+ | 2.76 грн |
| RN1101MFV,L3XHF(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN 50V 0.1A VESM
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: VESM
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 19.03 грн |
| 28+ | 11.15 грн |
| 100+ | 6.91 грн |
| 500+ | 4.77 грн |
| 1000+ | 4.21 грн |
| 2000+ | 3.74 грн |
| TK12A60W,S4VX |
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Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
Description: MOSFET N-CH 600V 11.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 600µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 300 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 323.51 грн |
| 50+ | 161.57 грн |
| TK13P25D,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Description: PB-F POWER MOSFET TRANSISTOR DPA
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 26.35 грн |
| TK13P25D,RQ |
Виробник: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 96W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
на замовлення 2398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 63.43 грн |
| 10+ | 50.17 грн |
| 100+ | 39.03 грн |
| 500+ | 31.05 грн |
| 1000+ | 25.29 грн |
| 2SC6000(TE16L1,NQ) |
Виробник: Toshiba Semiconductor and Storage
Description: 2SC6000(TE16L1,NQ)
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: 2SC6000(TE16L1,NQ)
Power - Max: 20 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Active
Supplier Device Package: PW-MOLD
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2.5A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 180mV @ 83mA, 2.5A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| XPQ1R004PB,LXHQ |
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Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Supplier Device Package: L-TOGL™
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Packaging: Tape & Reel (TR)
Supplier Device Package: L-TOGL™
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 89.77 грн |
| XPQ1R004PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
Description: 40V U-MOS IX-H L-TOGL 1.0MOHM
Input Capacitance (Ciss) (Max) @ Vds: 6890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: L-TOGL™
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerBSFN
Vgs(th) (Max) @ Id: 3V @ 500µA
Power Dissipation (Max): 230W (Tc)
Packaging: Cut Tape (CT)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 266.42 грн |
| 10+ | 167.60 грн |
| 100+ | 117.14 грн |
| 500+ | 89.70 грн |
| XPQR3004PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 207.19 грн |
| XPQR3004PB,LXHQ |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: 40V U-MOS IX-H L-TOGL 0.3MOHM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400A (Ta)
Rds On (Max) @ Id, Vgs: 0.3mOhm @ 200A, 10V
Power Dissipation (Max): 750W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: L-TOGL™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26910 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1823 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 532.85 грн |
| 10+ | 346.96 грн |
| 100+ | 253.16 грн |
| 500+ | 229.18 грн |
| 74VHC04FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 9.52 грн |
| 5000+ | 8.89 грн |
| 74VHC04FT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOPB
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOPB
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
на замовлення 5115 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 22.20 грн |
| 21+ | 14.97 грн |
| 25+ | 13.32 грн |
| 100+ | 10.77 грн |
| 250+ | 9.94 грн |
| 500+ | 9.45 грн |
| 1000+ | 8.89 грн |
| TC74VHC04FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Description: IC INVERTER 6CH 1-INP 14VSSOP
Packaging: Tape & Reel (TR)
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TC74VHC04FK(EL,K) |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14VSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Description: IC INVERTER 6CH 1-INP 14VSSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 6
Part Status: Active
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Supplier Device Package: 14-VSSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 14-VFSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SSM6L40TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
на замовлення 93000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.05 грн |
| 6000+ | 8.83 грн |
| 9000+ | 8.40 грн |
| 15000+ | 7.43 грн |
| 21000+ | 7.16 грн |
| 30000+ | 6.89 грн |
| SSM6L40TU,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Power - Max: 500mW (Ta)
Description: MOSFET N/P-CH 30V 1.6A UF6
Part Status: Active
Supplier Device Package: UF6
Vgs(th) (Max) @ Id: 2.6V @ 1mA, 2V @ 1mA
FET Feature: Logic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 10V, 2.9nC @ 10V
Rds On (Max) @ Id, Vgs: 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 15V, 120pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 1.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Power - Max: 500mW (Ta)
на замовлення 94343 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 44.40 грн |
| 12+ | 26.27 грн |
| 100+ | 16.79 грн |
| 500+ | 11.91 грн |
| 1000+ | 10.67 грн |
| TC7SET14FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Tape & Reel (TR)
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.56 грн |
| 6000+ | 3.95 грн |
| TC7SET14FU,LJ(CT |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Description: IC INVERT SCHMITT 1CH 1INP 5SSOP
Input Logic Level - Low: 0.5V ~ 0.6V
Input Logic Level - High: 1.9V ~ 2.1V
Supplier Device Package: 5-SSOP
Number of Inputs: 1
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
на замовлення 12770 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 24.58 грн |
| 18+ | 17.56 грн |
| 25+ | 15.36 грн |
| 100+ | 9.33 грн |
| 250+ | 7.72 грн |
| 500+ | 6.18 грн |
| 1000+ | 4.66 грн |
| HN1C01FE-GR,LF |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| HN1C01FE-GR,LF |
![]() |
Виробник: Toshiba Semiconductor and Storage
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS 2NPN 50V 0.15A ES6
Part Status: Active
Supplier Device Package: ES6
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 150mA
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 2848 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 18+ | 18.24 грн |
| 30+ | 10.46 грн |
| 100+ | 6.50 грн |
| 500+ | 4.47 грн |
| 1000+ | 3.94 грн |
| 2000+ | 3.50 грн |
| TB67H400AHG |
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Виробник: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: IC MOTOR DRVR 4.75V-5.25V 25HZIP
Packaging: Tube
Package / Case: 25-SIP Formed Leads
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 6A
Interface: Parallel, PWM
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 4.75V ~ 5.25V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 10V ~ 47V
Supplier Device Package: 25-HZIP
Motor Type - AC, DC: Brushed DC
Part Status: Active
на замовлення 397 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 425.80 грн |
| 10+ | 315.05 грн |
| 25+ | 291.19 грн |
| 100+ | 248.69 грн |
| 250+ | 236.97 грн |
| TC7WH08FU,LJ(CT |
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Виробник: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 4.80 грн |
| 6000+ | 4.47 грн |
| 9000+ | 4.39 грн |
| 2SC6042,T2HOSH1Q(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6042,T2WNLQ(J |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
Description: TRANS NPN 375V 1A MSTM
Packaging: Bulk
Package / Case: SC-71
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 800mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: MSTM
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| 2SC6142(Q) |
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Виробник: Toshiba Semiconductor and Storage
Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
Description: TRANS NPN 375V 1.5A PW-MOLD2
Packaging: Box
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 800mA
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: PW-MOLD2
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 1.1 W
товару немає в наявності
В кошику
од. на суму грн.


























